Patent application number | Description | Published |
20090190623 | EXTERNAL-CAVITY OPTICALLY-PUMPED SEMICONDUCTOR-LASER WITH A RESONATOR STOP - An optically pumped semiconductor-laser (OPS-laser) resonator includes an arrangement for delivering optical pump radiation on an OPS-chip to cause fundamental radiation to circulate in the resonator. The resonator includes second and third-harmonic generating crystals and is arranged deliver third-harmonic radiation. The resonator also includes a stop positioned and configured to stabilize the laser output. The pump radiation arrangement delivers the pump radiation at an angle to the resonator axis and includes wedged GRIN lens arranged such that the pump radiation forms a circular spot on the OPS chip. The third harmonic generating crystal acts as a polarizer for the fundamental radiation and angularly separates fundamental and third harmonic beams. | 07-30-2009 |
20100260210 | OPS-LASER PUMPED FIBER-LASER - An optical gain-fiber of a fiber-laser or a fiber-amplifier is optically pumped by radiation from a plurality of external cavity, optically pumped, surface-emitting semiconductor lasers (OPS-lasers). In one example, radiation from the OPS-lasers is focused by a lens into cladding of the gain-fiber at one end of the fiber. In another example radiation from the diode-lasers is focused into the core of a delivery fiber at one end of the delivery fiber. The other end of the delivery fiber is coupled to the cladding of the gain-fiber. | 10-14-2010 |
20100321765 | INTRACAVITY FREQUENCY-CONVERTED OPTICALLY-PUMPED SEMICONDUCTOR OPTICAL PARAMETRIC OSCILLATOR - In a branched resonator OPS-laser arrangement, a combination of intra-cavity optical parametric generation and intra-cavity frequency conversion provides output radiation in a range between about 550 nanometers about 800 nanometers from an OPS fundamental wavelength in a range between about 900 nm and about 1100 nm. | 12-23-2010 |
20100322270 | INTRACAVITY FREQUENCY-CONVERTED OPTICALLY-PUMPED SEMICONDUCTOR LASER WITH RED-LIGHT OUTPUT - In a branched resonator OPS-laser arrangement, a combination of intra-cavity optical parametric generation and intra-cavity sum-frequency mixing provides output radiation in a range between about 550 nanometers about 700 nanometers from an OPS fundamental wavelength in a range between about 900 nm and about 1100 nm. | 12-23-2010 |
20110150013 | RESONANT PUMPING OF THIN-DISK LASER WITH AN OPTICALLY PUMPED EXTERNAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER - Laser apparatus comprises a solid-state laser-resonator including a thin-disk solid-state gain-medium. The thin-disk gain medium is optically pumped using radiation circulating in an OPS-laser resonator. The solid-state laser-resonator can be a passively mode-locked or actively Q-switched laser-resonator. | 06-23-2011 |
20120224595 | SINGLE-MODE INTRA-CAVITY FREQUENCY-DOUBLED CW SOLID-STATE LASER WITH VOLUMETRIC GAIN-GRATING - A solid state-gain medium is in the form of a thin disk backed by a reflective coating. A laser resonator is formed by the reflective coating and another mirror. Optical pump radiation is directed into the thin-disk gain-medium for energizing the gain-medium and generating a standing wave of fundamental-wavelength radiation in the resonator. The pump-radiation is directed into the gain-medium at an angle to the resonator axis and pump-radiation fringes are formed by interference between incident and reflected pump-radiation. The pump-radiation angle is selected such that the pump-radiation fringes are aligned with antinodes of the fundamental-wavelength standing wave. | 09-06-2012 |
20130003761 | MODE-LOCKED OPTICALLY PUMPED SEMICONDUCTOR LASER - A laser includes an optically pumped semiconductor OPS gain-structure. The apparatus has a laser-resonator which includes a mode-locking device for causing the laser to deliver mode-locked pulses. The resonator has a total length selected such that the mode-locked pulses are delivered at a pulse repetition frequency of about 100 MHz. An optical arrangement within the resonator provides that radiation circulating in the resonator makes a plurality of incidences on the OPS gain-structure with a time less than the excited-state lifetime of the gain-structure between successive incidences. | 01-03-2013 |
20140247842 | MODE-LOCKED OPTICALLY PUMPED SEMICONDUCTOR LASER - A laser includes an optically pumped semiconductor OPS gain-structure. The apparatus has a laser-resonator which includes a mode-locking device for causing the laser to deliver mode-locked pulses. The resonator has a total length selected such that the mode-locked pulses are delivered at a pulse repetition frequency less than 150 MHz. An optical arrangement within the resonator provides that radiation circulating in the resonator makes a plurality of incidences on the OPS gain-structure with a time less than the excited-state lifetime of the gain-structure between successive incidences. | 09-04-2014 |
20150085370 | BEAM-STACKING ELEMENT FOR DIODE-LASER BAR STACK - Optical apparatus includes a diode-laser bar stack having N fast-axis stacked diode-laser bars cooperative with a parallel sided transparent stacking plate. The stacking plate receives N original beams from the N diode-laser bars and converts the N beams to 2N fast-axis stacked beams having one-half of a width the original beams and one-half of a fast-axis spacing between the original beams. | 03-26-2015 |