Patent application number | Description | Published |
20100216001 | Rechargeable battery - A rechargeable battery including an electrode assembly including first and second electrode plates, each of which includes an electrode uncoated portion and a separator interposed between the first and second electrode plates, and at least one current collector plate, each current collector plate contacting one of the electrode uncoated portions of the first and second electrode plates, wherein each current collector plate includes a protrusion protruding toward the electrode assembly and having a contact portion contacting one of the electrode uncoated portions, and a slit in the contact portion disposed at a predetermined angle with respect to the direction of the electrode assembly. | 08-26-2010 |
20110183165 | Secondary battery - A secondary battery includes an electrode assembly in a case, the electrode assembly including a positive electrode, a negative electrode, and a separator, a cap assembly connected to the case and including a cap plate, first and second terminals through the cap plate, and a shorting member selectively connecting the first terminal and the cap plate, and at least one electrode lead tab including a terminal-junction part electrically connected to a terminal, an electrode assembly-junction part electrically connected to an electrode in accordance with the terminal, and a fuse part electrically connected between the terminal-junction part and the electrode assembly-junction part, the fuse part being configured to break when the first and second terminals are electrically connected, and the fuse part extending at an angle other than zero with respect to a longitudinal extension line of the terminal junction part and/or the electrode assembly-junction part. | 07-28-2011 |
Patent application number | Description | Published |
20110073928 | Non-Volatile Memory Devices Having Semiconductor Barrier Patterns and Methods of Forming Such Devices - Provided are a non-volatile memory device and a method of forming the same. The non-volatile memory device includes: a tunnel insulation layer on a substrate; a floating gate on the tunnel insulation layer; a blocking insulation layer on the floating gate; a first barrier pattern, between the top of the floating gate and the blocking insulation layer, having a higher conduction band energy level than the floating gate; and a control gate on the blocking insulation layer. | 03-31-2011 |
20110090744 | CHANNEL PRECHARGE AND PROGRAM METHODS OF A NONVOLATILE MEMORY DEVICE - A channel pre-charge method of a nonvolatile memory device including a cell string includes pre-charging a channel of the cell string according to a first word line bias condition and pre-charging the channel of the cell string according to a second word line bias condition, different than the first word line bias condition. | 04-21-2011 |
20110103154 | LOCAL SELF-BOOSTING METHOD OF FLASH MEMORY DEVICE AND PROGRAM METHOD USING THE SAME - Provided is a local self-boosting method of a flash memory device including at least one string having memory cells respectively connected to wordlines. The local self-boosting method includes forming a potential well at a channel of the string and forming potential walls at the potential well to be disposed at both sides of a channel of a selected one of the memory cells. The channel of the selected memory cell is locally limited by the potential walls and boosted when a program voltage is applied to the selected memory cell. | 05-05-2011 |
20110169068 | NON-VOLATILE MEMORY DEVICES HAVING A FLOATING GATE CAP BETWEEN A FLOATING GATE AND A GATE INSULATING LAYER - Provided are nonvolatile memory devices and a method of forming the same. A tunnel insulating pattern is provided on a substrate, and a floating gate is provided on the tunnel insulating pattern. A floating gate cap having a charge trap site is provided on the floating gate, and a gate dielectric pattern is provided on the floating gate cap. A control gate is provided on the gate dielectric pattern. | 07-14-2011 |
20110286266 | MEMORY SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME - In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution. | 11-24-2011 |
20140133223 | MEMORY SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME - In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution. | 05-15-2014 |
Patent application number | Description | Published |
20110025011 | Lower arm mounting unit for multi-link suspension system - A lower arm mounting unit for a multi-link suspension system having a knuckle rotatably supporting a wheel, and first and second lower arms connecting the knuckle to a vehicle body, may include a pair of mounting protrusions formed to the knuckle, a first ball stud connecting an end portion of the first lower arm to the pair of the mounting protrusions, and a second ball stud connecting an end portion of the second lower arm to the pair of the mounting protrusions and the first ball stud by inserting the end portion of the second ball stud between the pair of the mounting protrusions, the end portion of the first ball stud, and the knuckle. | 02-03-2011 |
20150323816 | LIGHT MODULATORS AND DIGITAL EXPOSURE APPARATUSES INCLUDING THE SAME - A light modulator may include: a light modulating unit formed as a pixel-array type by using a PIN diode including multiple quantum wells including a Group-III nitride semiconductor material, and configured to modulate light by electroabsorption; and/or a control unit including a transistor configured to control voltage applied to the PIN diode of the light modulating unit. The PIN diode and the transistor may be arrayed in an active matrix form. | 11-12-2015 |
20160062153 | LIGHT MODULATING APPARATUS AND METHOD OF DRIVING THE SAME - Disclosed is a light modulating apparatus. The light modulating apparatus includes a pixel array including a plurality of pixels, a light modulating device that absorbs or transmit light incident on the pixel array according to an applied voltage, a flip-flop circuit that outputs a first voltage based on a device driving signal indicating a level of a second voltage applied to be applied to the light modulating device, and an amplifier that amplifies the first voltage to generate the second voltage and applies the second voltage to the light modulating device. | 03-03-2016 |
20160103233 | ORGANIC-INORGANIC COMPOSITE FILMS AND METHODS OF MANUFACTURING THE SAME - A method of manufacturing an organic-inorganic composite thin film may include: forming a thin film from a paste that includes an inorganic powder and an organic compound binder by using a screen printing process; and/or performing a pressing process and a heating process with respect to the thin film. The heating process may be performed at a glass transition temperature of the organic compound binder or in a temperature range higher than the glass transition temperature of the organic compound binder. An X-ray detector configured to detect X-rays irradiated from an outside of the X-ray detector may include: a photoconductive material layer in which electron-hole pairs are formed due to absorption of the X-rays. The photoconductive material layer may be formed of an organic-inorganic composite thin film that includes an inorganic powder and an organic compound binder. | 04-14-2016 |
20160103234 | X-RAY DETECTORS HAVING PHOTOCONDUCTORS INCLUDING CURRENT RESISTANCE LAYERS - An X-ray detector may comprise: a substrate; a plurality of pixel electrodes on the substrate; a photoconductor covering the plurality of pixel electrodes; and/or a common electrode on the photoconductor. The photoconductor may comprise: at least two photoconductor layers; and/or a current resistance layer, between the at least two photoconductor layers, configured to reduce current flow between the at least two photoconductor layers. An X-ray detector may comprise: a plurality of photoconductor layers; and/or a current resistance layer, between the plurality of photoconductor layers, configured to reduce current flow between the plurality of photoconductor layers. | 04-14-2016 |