Patent application number | Description | Published |
20090039331 | PHASE CHANGE MATERIAL STRUCTURES - Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM). | 02-12-2009 |
20090045388 | PHASE CHANGE MATERIAL STRUCTURE AND RELATED METHOD - A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM). | 02-19-2009 |
20090262572 | MULTILAYER STORAGE CLASS MEMORY USING EXTERNALLY HEATED PHASE CHANGE MATERIAL - A multi-layer, phase change material (PCM) memory apparatus includes a plurality of semiconductor layers sequentially formed over a base substrate, wherein each layer comprises an array of memory cells formed therein, each memory cell further including a PCM element, a first diode serving as a heater diode in thermal proximity to the PCM element and configured to program the PCM element to one of a low resistance crystalline state and a high resistance amorphous state, and a second diode serving a sense diode for a current path used in reading the state of the PCM element; the base substrate further including decoding, programming and sensing circuitry formed therein, with each of the plurality of semiconductor layers spaced by an insulating layer; and intralayer wiring for communication between the base substrate circuitry and the array of memory cells in each of the semiconductor layers. | 10-22-2009 |
20100073997 | PIEZO-DRIVEN NON-VOLATILE MEMORY CELL WITH HYSTERETIC RESISTANCE - A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM. | 03-25-2010 |
20130009668 | 4-TERMINAL PIEZOELECTRONIC TRANSISTOR (PET) - A 4-terminal piezoelectronic transistor (PET) which includes a piezoelectric (PE) material disposed between first and second electrodes; an insulator material disposed on the second electrode; a third electrode disposed on the insulator material and a piezoresistive (PR) material disposed between the third electrode and a fourth electrode. An applied voltage across the first and second electrodes causing a pressure from the PE material to be applied to the PR material through the insulator material, the electrical resistance of the PR material being dependent upon the pressure applied by the PE material. The first and second electrodes are electrically isolated from the third and fourth electrodes. Also disclosed are logic devices fabricated from 4-terminal PETs and a method of fabricating a 4-terminal PET. | 01-10-2013 |
20140169078 | PIEZOELECTRONIC MEMORY - A memory element includes a first piezotronic transistor coupled to a second piezotronic transistor; the first and second piezotronic transistors each comprising a piezoelectric (PE) material and a piezoresistive (PR) material, wherein an electrical resistance of the PR material is dependent upon an applied voltage across the PE material by way of an applied pressure to the PR material by the PE material. | 06-19-2014 |
20150255699 | PIEZOELECTRONIC DEVICE WITH NOVEL FORCE AMPLIFICATION - A piezoelectronic device with novel force amplification includes a first electrode; a piezoelectric layer disposed on the first electrode; a second electrode disposed on the piezoelectric layer; an insulator disposed on the second electrode; a piezoresistive layer disposed on the insulator; a third electrode disposed on the insulator; a fourth electrode disposed on the insulator; a semi-rigid housing surrounding the layers and the electrodes; wherein the semi-rigid housing is in contact with the first, third, and fourth electrodes and the piezoresistive layer; wherein the semi-rigid housing includes a void. The third and fourth electrodes are on the same plane and separated from each other in the transverse direction by a distance. | 09-10-2015 |
20150269984 | NON-VOLATILE, PIEZOELECTRONIC MEMORY BASED ON PIEZORESISTIVE STRAIN PRODUCED BY PIEZOELECTRIC REMANENCE - A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material. | 09-24-2015 |