Patent application number | Description | Published |
20080299382 | Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer - Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device. | 12-04-2008 |
20090032809 | Organic thin film transistor and method of manufacturing the same - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device. | 02-05-2009 |
20090045396 | Composition for forming passivation layer and organic thin film transistor comprising the passivation layer - Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics. | 02-19-2009 |
20090101891 | Multi-layered bipolar field-effect transistor and method of manufacturing the same - Disclosed herein is a multi-layered bipolar field-effect transistor, including a gate electrode, a gate insulating layer, an electron transport layer, a hole transport layer, a source electrode, and a drain electrode, in which an intermediate separating layer is formed between the electron transport layer and the hole transport layer, and a method of manufacturing the same. The multi-layered bipolar field-effect transistor has advantages in that, since a P-channel and a N-channel are effectively separated, the electrical properties thereof, such as current ON/OFF ratio, electron mobility, hole mobility, and the like, are improved, and, since a device can be manufactured through a solution process without damaging layers, the processability thereof is improved. | 04-23-2009 |
20110227064 | Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors - Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors. | 09-22-2011 |
20110233539 | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film - Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers. | 09-29-2011 |
20120083069 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device. | 04-05-2012 |
20120122275 | METHODS OF FABRICATING ORGANIC THIN FILM TRANSISTORS - Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments. | 05-17-2012 |
20120291857 | Organic Passivation Layer Composition, Transistor And/Or Electronic Device Including Organic Passivation Layer Fabricated Therefrom - According to example embodiments, an organic passivation layer composition includes a cross-linking agent and an oligomer or a polymer including structural units represented by the following Chemical Formulae 1 and 2: | 11-22-2012 |
20130248851 | Oxide Thin Film, Methods Of Manufacturing Oxide Thin Film And Electronic Devices Including Oxide Thin Film - Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers. | 09-26-2013 |
20140093997 | METHOD OF MANUFACTURING AN ORGANIC SEMICONDUCTOR THIN FILM - A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted. | 04-03-2014 |
20140175414 | ORGANIC SEMICONDUCTOR POLYMER, ORGANIC THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE - An organic semiconductor polymer includes a moiety represented by the following Chemical Formula 1 and a heteroaromatic moiety having at least one of sulfur (S) and selenium (Se). | 06-26-2014 |
20140252326 | DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR - A display device according to example embodiments includes a first thin film transistor on a substrate, a second thin film transistor on the first thin film transistor, and a display unit electrically connected to at least one of the first thin film transistor and the second thin film transistor. | 09-11-2014 |