Patent application number | Description | Published |
20100299297 | SYSTEM FOR ELECTRONIC LEARNING SYNAPSE WITH SPIKE-TIMING DEPENDENT PLASTICITY USING PHASE CHANGE MEMORY - A system, method and computer program product for producing spike-dependent plasticity in an artificial synapse is disclosed. According to one embodiment, a method for producing spike-dependent plasticity in an artificial neuron comprises generating a pre-synaptic spiking event in a first neuron when a total integrated input to the first neuron exceeds a first predetermined threshold. A post-synaptic spiking event is generated in a second neuron when a total integrated input to the second neuron exceeds a second predetermined threshold. After the pre-synaptic spiking event, a first pulse is applied to a pre-synaptic node of a synapse having a phase change memory element. After the post-synaptic spiking event, a second varying pulse is applied to a post-synaptic node of the synapse, wherein current through the synapse is a function of the state of the second varying pulse at the time of the first pulse. | 11-25-2010 |
20110024712 | PCM With Poly-Emitter BJT Access Devices - A phase change memory (PCM) includes an array comprising a plurality of memory cells, a memory cell comprising a phase change element (PCE); and a PCE access device comprising a bipolar junction transistor (BJT), the BJT comprising an emitter region comprising a polycrystalline semiconductor. A memory cell for a phase change memory (PCM) includes a phase change element (PCE); and a PCE access device comprising a bipolar junction transistor (BJT), the BJT comprising an emitter region comprising a polycrystalline semiconductor. | 02-03-2011 |
20110038199 | MEASUREMENT METHOD FOR READING MULTI-LEVEL MEMORY CELL UTILIZING MEASUREMENT TIME DELAY AS THE CHARACTERISTIC PARAMETER FOR LEVEL DEFINITION - A memory system includes a memory cell configured to represent at least two binary values, a bit line coupled to the memory cell, and first and second comparators coupled to the bit line that, respectively, compare a first and second reference value to a value of a parameter of the bit-line. The system also includes a first and second timers configured to measures a time for the parameter of the bit line to decay. The system also includes a logic unit coupled to the first and second timers that selects the time for the parameter of the bit line to decay from to a first value or a second value. | 02-17-2011 |
20110116307 | PHASE CHANGE MEMORY DEVICE SUITABLE FOR HIGH TEMPERATURE OPERATION - A phase change memory cell that includes a bottom electrode, a top electrode separated from the bottom electrode, and growth-dominated phase change material deposited between the bottom electrode and the top electrode and contacting the bottom electrode and the top electrode and surrounded by insulation material at sidewalls thereof. The phase change memory cell in a reset state only includes an amorphous phase of the growth-dominated phase change material within an active volume of the phase change memory cell. | 05-19-2011 |
20110119214 | AREA EFFICIENT NEUROMORPHIC CIRCUITS - A neuromorphic circuit includes a first field effect transistor in a first diode configuration establishing an electrical connection between a first gate and a first drain of the first field effect transistor. The neuromorphic circuit also includes a second field effect transistor in a second diode configuration establishing an electrical connection between a second gate and a second drain of the second field effect transistor. The neuromorphic circuit further includes variable resistance material electrically connected to both the first drain and the second drain, where the variable resistance material provides a programmable resistance value. The neuromorphic circuit additionally includes a first junction electrically connected to the variable resistance material and providing a first connection point to an output of a neuron circuit, and a second junction electrically connected to the variable resistance material and providing a second connection point to the output of the neuron circuit. | 05-19-2011 |
20110119215 | HARDWARE ANALOG-DIGITAL NEURAL NETWORKS - An analog-digital crosspoint-network includes a plurality of rows and columns, a plurality of synaptic nodes, each synaptic node of the plurality of synaptic nodes disposed at an intersection of a row and column of the plurality of rows and columns, wherein each synaptic node of the plurality of synaptic nodes includes a weight associated therewith, a column controller associated with each column of the plurality of columns, wherein each column controller is disposed to enable a weight change at a synaptic node in communication with said column controller, and a row controller associated with each row of the plurality of rows, wherein each row controller is disposed to control a weight change at a synaptic node in communication with said row controller. | 05-19-2011 |
20110134676 | RESISTIVE MEMORY DEVICES HAVING A NOT-AND (NAND) STRUCTURE - Resistive memories having a not-and (NAND) structure including a resistive memory cell. The resistive memory cell includes a resistive memory element for storing a resistance value and a memory element access device for controlling access to the resistive memory element. The memory element access device is connected in parallel to the resistive memory element. | 06-09-2011 |
20110153533 | PRODUCING SPIKE-TIMING DEPENDENT PLASTICITY IN AN ULTRA-DENSE SYNAPSE CROSS-BAR ARRAY - Embodiments of the invention relate to producing spike-timing dependent plasticity in an ultra-dense synapse cross-bar array for neuromorphic systems. An aspect of the invention includes when an electronic neuron spikes, an alert pulse is sent from the spiking electronic neuron to each electronic neuron connected to the spiking electronic neuron. When the spiking electronic neuron sends the alert pulse, a gate pulse is sent from the spiking electronic neuron to each electronic neuron connected to the spiking electronic neuron. When each electronic neuron receives the alert pulse, a response pulse is sent from each electronic neuron receiving the alert pulse to the spiking electronic neuron. The response pulse is a function of time since a last spiking of the electronic neuron receiving the alert pulse. In addition, the combination of the gate pulse and response pulse is capable increasing or decreasing conductance of a variable state resistor. | 06-23-2011 |