Patent application number | Description | Published |
20090283143 | POINT CONTACT SOLAR CELL - A semiconductor component comprises a semiconductor substrate comprising a front surface, a back surface which is opposite thereto, and a surface normal which is perpendicular to the front and back surfaces, a first contact structure which is electrically conductive and is electrically connected to the front surface of the semiconductor substrate via at least one point-shaped front contact, and a second contact structure which is electrically conductive and is electrically connected to the back surface of the semiconductor substrate. | 11-19-2009 |
20090311825 | METALLIZATION METHOD FOR SOLAR CELLS - A method for the production of a contact structure of a solar cell allows p-contacts and n-contacts to be produced simultaneously. | 12-17-2009 |
20100001400 | SOLDER CONTACT - A low melting temperature solder is provided for producing a solder contact between a connection element and a contact structure of a semiconductor component. | 01-07-2010 |
20100001407 | GALVANIC MASK - A method for the production of a contact structure of a semiconductor component comprises the masking of at least one side of a semiconductor substrate with a coating and the partial removal thereof in at least one pre-determined region. | 01-07-2010 |
20100032013 | SEMICONDUCTOR COMPONENT - A semiconductor component, in particular in the form of a solar cell, comprises a two-dimensional semiconductor substrate with a first side, a second side which is arranged opposite thereto, a surface normal which is perpendicular to said first and second sides, and a plurality of recesses which are at least arranged on the second side and extend in the direction of the surface normal, at least one dielectric passivation layer which is arranged on the second side, an electrically conducting contact layer arranged on the passivation layer, a plurality of contact elements for electrically connecting the contact layer with the semiconductor substrate, which contact elements are electrically conductive, are in electrically conducting connection with both the semiconductor substrate and with the contact layer, fill at least 50 %, in particular at least 90%, preferably 100% of in each case one of the recesses, project beyond the recesses with a projection in the direction perpendicular to the surface normal and are of an easily solderable material. | 02-11-2010 |
20100108525 | LIGHT-INDUCED PLATING - An apparatus for the light-supported precipitation of an electrolyte on a semiconductor component comprises a plating bath with an electrolyte, a first electrode arranged in the plating bath and a second electrode arranged outside the plating bath, a holding device for the semiconductor component and an irradiation device for irradiating the semiconductor component with electromagnetic radiation, the irradiation device being arranged outside the plating bath. | 05-06-2010 |
20100181670 | CONTACT STRUCTURE FOR A SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME - A semiconductor component comprising a substrate with a first side and a second side a multi-layer contact structure arranged on at least one side of the substrate, the contact structure exhibiting a barrier layer to prevent the diffusion of ions from the side of barrier layer opposite to the substrate into the substrate. | 07-22-2010 |
20100219535 | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT - A method for producing a semiconductor component with an easily solderable contact structure comprising the provision of a semiconductor substrate of a planar design with a first side, a second side, a surface normal standing vertically thereon, a dielectric passivation layer arranged on at least one of the sides and a first contact layer arranged on passivation layer, the application, at least in some areas, of at least one second contact layer onto the first contact layer, the at least one second contact layer comprising at least a partial layer made of an easily solderable metal, especially of nickel and/or silver and/or tin and/or a compound thereof, and the making of an electrically conductive contact between the second contact layer and the semiconductor substrate. | 09-02-2010 |
20100317192 | MASKING METHOD - The invention relates to a method for masking a semiconductor substrate comprising the following steps: providing a planar semiconductor substrate having a first side and a second side lying opposite thereto, applying a mask to at least one of the sides, an extrusion printing method being envisaged for applying the mask. | 12-16-2010 |
20110210428 | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, SEMICONDUCTOR COMPONENT AND INTERMEDIATE PRODUCT IN THE PRODUCTION THEREOF - Method for producing semiconductor components with a contact structure having a high aspect ratio comprising the following steps: providing an essentially plane semiconductor substrate having a first side and a second side, applying a mask onto at least a first partial area on at least one of the sides of the semiconductor substrate and applying a contact structure onto at least a second partial area, which is different from first partial area, on at least one of the sides of semiconductor substrate. | 09-01-2011 |