Patent application number | Description | Published |
20110282315 | PACKAGE FOLDING OF DISPOSABLE SANITARY ARTICLES HAVING BELTS - A method of package folding a disposable sanitary article and article thereof having a front part, a rear part, a crotch part therebetween, and a belt including two parts. Each of the two belt parts can be extended in a cross-direction outwardly from the respective outer end portion of each side portion of the rear part. The belt is arranged on the rear part with the belt parts overlapping each other. Fastening elements for releasably fastening the front part to the belt are arranged on each side portion of the front part. The article is folded so that the folded article attains a rectangular shape and a desired size. As a first step in the package folding, the front and rear parts are folded towards each other so that the fastening elements on the front part are attached to one of the overlapping belt parts arranged on the rear part. | 11-17-2011 |
20130012898 | METHOD FOR PRODUCING A WEB OF A LAMINATE MATERIAL FOR RETAINING FAECES AND METHOD FOR PRODUCING AN ABSORBENT ARTICLE - A method for producing a web of a laminate material for retaining faeces including laminating first and second webs to form an intermediate laminate web, providing transversal slits in the intermediate laminate web and expanding the intermediate laminate web such that the slits are opened to openings. An expanded intermediate laminate web is formed by the expansion. The expanded web is laminated to a third web in order to fix the expanded web in an expanded state, whereby the laminate material web is formed. Also, a method of producing an absorbent article including producing the laminate material web according to the method above. | 01-10-2013 |
20130218119 | ABSORBENT ARTICLE COMPRISING A SHAPED ELEMENT AND A METHOD OF MAKING SUCH - An absorbent article, which comprises a fastening element for the absorbent article for fastening the absorbent article to underpants or a stiffening element for providing a relatively stiff region of the absorbent article and for defining a collapse prone portion of the absorbent article to shape the absorbent article as desired. The element defines a Y- or X-shape and comprises a first piece of material defining a bend and a second piece of material defining a bend, wherein the first and second pieces of material and their bends together define the Y or X shape of the element. The first and second pieces define a generally V- or U-shape so that each of the first and second pieces has first and second legs extending from a point of the V-shape or a bight of the U-shape, wherein the second legs respectively provide first and second arms of the Y- or X-shape of the element, and wherein the first legs either together provide a third arm of the Y-shape or respectively provide third and fourth arms of the X-shape. | 08-22-2013 |
Patent application number | Description | Published |
20130307086 | MASK FREE PROTECTION OF WORK FUNCTION MATERIAL PORTIONS IN WIDE REPLACEMENT GATE ELECTRODES - In a replacement gate scheme, after formation of a gate dielectric layer, a work function material layer completely fills a narrow gate trench, while not filling a wide gate trench. A dielectric material layer is deposited and planarized over the work function material layer, and is subsequently recessed to form a dielectric material portion overlying a horizontal portion of the work function material layer within the wide gate trench. The work function material layer is recessed employing the dielectric material portion as a part of an etch mask to form work function material portions. A conductive material is deposited and planarized to form gate conductor portions, and a dielectric material is deposited and planarized to form gate cap dielectrics. | 11-21-2013 |
20130309857 | MASK FREE PROTECTION OF WORK FUNCTION MATERIAL PORTIONS IN WIDE REPLACEMENT GATE ELECTRODES - In a replacement gate scheme, after formation of a gate dielectric layer, a work function material layer completely fills a narrow gate trench, while not filling a wide gate trench. A dielectric material layer is deposited and planarized over the work function material layer, and is subsequently recessed to form a dielectric material portion overlying a horizontal portion of the work function material layer within the wide gate trench. The work function material layer is recessed employing the dielectric material portion as a part of an etch mask to form work function material portions. A conductive material is deposited and planarized to form gate conductor portions, and a dielectric material is deposited and planarized to form gate cap dielectrics. | 11-21-2013 |
20140110817 | SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH - Fin structures and methods of manufacturing fin structures using a dual-material sidewall image transfer mask to enable patterning of sub-lithographic features is disclosed. The method of forming a plurality of fins includes forming a first set of fins having a first pitch. The method further includes forming an adjacent fin to the first set of fins. The adjacent fin and a nearest fin of the first set of fins have a second pitch larger than the first pitch. The first set of fins and the adjacent fin are sub-lithographic features formed using a sidewall image transfer process. | 04-24-2014 |
20140231918 | FINFETS AND FIN ISOLATION STRUCTURES - FinFETs and fin isolation structures and methods of manufacturing the same are disclosed. The method includes patterning a bulk substrate to form a plurality of fin structures of a first dimension and of a second dimension. The method includes forming oxide material in spaces between the plurality of fin structures of the first dimension and the second dimension. The method includes forming a capping material over sidewalls of selected ones of the fin structures of the first dimension and the second dimension. The method includes recessing the oxide material to expose the bulk substrate on sidewalls below the capping material. The method includes performing an oxidation process to form silicon on insulation fin structures and bulk fin structures with gating. The method further includes forming a gate structure over the SOI fin structures and the bulk fin structures. | 08-21-2014 |
20140264490 | REPLACEMENT GATE ELECTRODE WITH A SELF-ALIGNED DIELECTRIC SPACER - A dielectric disposable gate structure can be formed across a semiconductor material portion, and active semiconductor regions are formed within the semiconductor material portion. Raised active semiconductor regions are grown over the active semiconductor regions while the dielectric disposable gate structure limits the extent of the raised active semiconductor regions. A planarization dielectric layer is formed over the raised active semiconductor regions. In one embodiment, the dielectric disposable gate structure is removed, and a dielectric gate spacer can be formed by conversion of surface portions of the raised active semiconductor regions around a gate cavity. Alternately, an etch mask layer overlying peripheral portions of the disposable gate structure can be formed, and a gate cavity and a dielectric spacer can be formed by anisotropically etching an unmasked portion of the dielectric disposable gate structure. A replacement gate structure can be formed in the gate cavity. | 09-18-2014 |
20140264878 | COPPER INTERCONNECT STRUCTURES AND METHODS OF MAKING SAME - A structure and method of making the structure. The structure includes a dielectric layer on a substrate; a first wire formed in a first trench in the dielectric layer, a first liner on sidewalls and a bottom of the first trench and a first copper layer filling all remaining space in the first trench; a second wire formed in a second trench in the dielectric layer, a second liner on sidewalls and a bottom of the second trench and a second copper layer filling all remaining space in the second trench; and an electromigration stop formed in a third trench in the dielectric layer, a third liner on sidewalls and a bottom of the third trench and a third copper layer filling all remaining space in the third trench, the electromigration stop between and abutting respective ends of the first and second wires. | 09-18-2014 |
20140363941 | REPLACEMENT GATE ELECTRODE WITH A SELF-ALIGNED DIELECTRIC SPACER - A dielectric disposable gate structure can be formed across a semiconductor material portion, and active semiconductor regions are formed within the semiconductor material portion. Raised active semiconductor regions are grown over the active semiconductor regions while the dielectric disposable gate structure limits the extent of the raised active semiconductor regions. A planarization dielectric layer is formed over the raised active semiconductor regions. In one embodiment, the dielectric disposable gate structure is removed, and a dielectric gate spacer can be formed by conversion of surface portions of the raised active semiconductor regions around a gate cavity. Alternately, an etch mask layer overlying peripheral portions of the disposable gate structure can be formed, and a gate cavity and a dielectric spacer can be formed by anisotropically etching an unmasked portion of the dielectric disposable gate structure. A replacement gate structure can be formed in the gate cavity. | 12-11-2014 |
Patent application number | Description | Published |
20130115767 | Metal Alloy Cap Integration - A metal interconnect structure, which includes metal alloy capping layers, and a method of manufacturing the same. The originally deposited alloy capping layer element within the interconnect features will diffuse into and segregate onto top surface of the metal interconnect. The metal alloy capping material is deposited on a reflowed copper surface and is not physically in contact with sidewalls of the interconnect features. The metal alloy capping layer is also reflowed on the copper. Thus, there is a reduction in electrical resistivity impact from residual alloy elements in the interconnect structure. That is, there is a reduction, of alloy elements inside the features of the metal interconnect structure. The metal interconnect structure includes a dielectric layer with a recessed line, a liner material on sidewalls, a copper material, an alloy capping layer, and a dielectric cap. | 05-09-2013 |
20130252419 | Metal Alloy Cap Integration - A metal interconnect structure, which includes metal alloy capping layers, and a method of manufacturing the same. The originally deposited alloy capping layer element within the interconnect features will diffuse into and segregate onto top surface of the metal interconnect. The metal alloy capping material is deposited on a reflowed copper surface and is not physically in contact with sidewalls of the interconnect features. The metal alloy capping layer is also reflowed on the copper. Thus, there is a reduction in electrical resistivity impact from residual alloy elements in the interconnect structure. That is, there is a reduction, of alloy elements inside the features of the metal interconnect structure. The metal interconnect structure includes a dielectric layer with a recessed line, a liner material on sidewalls, a copper material, an alloy capping layer, and a dielectric cap. | 09-26-2013 |
20140099792 | SINGLE FIN CUT EMPLOYING ANGLED PROCESSING METHODS - Fin-defining spacers are formed on an array of mandrel structure. Mask material portions can be directionally deposited on fin-defining spacers located on one side of each mandrel structure, while not deposited on the other side. A photoresist layer is subsequently applied and patterned to form an opening, of which the overlay tolerance increases by a pitch of fin-defining spacers due to the mask material portions. Alternately, a conformal silicon oxide layer can be deposited on fin-defining spacers and structure-damaging ion implantation is performed only on fin-defining spacers located on one side of each mandrel structure. A photoresist layer is subsequently applied and patterned to form an opening, from which a damaged silicon oxide portion and an underlying fin-defining spacer are removed, while undamaged silicon oxide portions are not removed. An array of semiconductor fins including a vacancy can be formed by transferring the pattern into a semiconductor layer. | 04-10-2014 |
20140124933 | COPPER INTERCONNECT STRUCTURES AND METHODS OF MAKING SAME - A structure and method of making the structure. The structure includes a dielectric layer on a substrate; a first wire formed in a first trench in the dielectric layer, a first liner on sidewalls and a bottom of the first trench and a first copper layer filling all remaining space in the first trench; a second wire formed in a second trench in the dielectric layer, a second liner on sidewalls and a bottom of the second trench and a second copper layer filling all remaining space in the second trench; and an electromigration stop formed in a third trench in the dielectric layer, a third liner on sidewalls and a bottom of the third trench and a third copper layer filling all remaining space in the third trench, the electromigration stop between and abutting respective ends of the first and second wires. | 05-08-2014 |
Patent application number | Description | Published |
20080296546 | CABLE FOR USE IN SAFETY BARRIER - A cable for use in a safety barrier is provided. A cable for use in a safety barrier may include a plastic core wire and a plurality of metal wires disposed adjacent to and longitudinally to the plastic core wire. The cable may be pre-stretched prior to installation in the safety barrier. A method of making cable for use in a safety barrier may include (a)providing a plastic core wire, (b) disposing a plurality of metal wires, each metal wire disposed adjacent to and longitudinally to the plastic core wire, and (c) prestretching the cable prior to installation in the safety barrier. | 12-04-2008 |
20100140577 | Combined Guardrail and Cable Safety Systems - A combined guardrail and cable safety system is disclosed. In one aspect, the present invention teaches a safety barrier including a plurality of cable posts spaced from each other and disposed adjacent to a roadway. At least two cables are releasably engaged with and supported by the cable posts. The cable posts and the two cables cooperate with each other to prevent a vehicle from leaving the roadway. A plurality of guardrail posts are spaced from each other and disposed adjacent to the roadway longitudinally spaced from the plurality of cable post. A guardrail beam is fixedly coupled to the plurality of guardrail posts and including slots. The two cables extend from the cable posts through respective slots formed in the guardrail beam permitting each cable to engage a respective cable anchor bracket securely fastened to a portion of the guardrail beam. | 06-10-2010 |
20130069026 | Cable Guardrail Safety System - A safety barrier comprising is disclosed. The safety barrier comprises a plurality of posts spaced from each other and disposed adjacent to a roadway, each post having a cross section defined in part by a web and a pair of legs extending therefrom. Additionally, each post has one slot formed in the web of the post extending from an upper end of the post. A first cable and a second cable are releasably engaged with and supported by the posts and disposed within each slot between the respective legs of each post. A third cable and a fourth cable are each coupled to an exterior surface of the posts. The posts and the first, second, third and fourth cables cooperate to prevent a vehicle from leaving the roadway. | 03-21-2013 |
Patent application number | Description | Published |
20110156373 | GLIDING BOARD WITH MODIFIED BENDING CHARACTERISTICS ADJACENT BINDING MOUNTING REGIONS - A gliding board may have less resistance to bending in portions within one or both binding mounting regions as compared to portions at or near ends of the binding mounting regions. Some embodiments provide for increased ability to store and release energy when performing certain maneuvers with the board, such as nose presses, ollies and similar moves. A board may have a concave portion in the top surface located at both the forward and rear binding mounting regions, and convex portions may be located in the top surface between the binding mounting regions as well as forward of the forward mounting region and rearward of the rear mounting region. In another arrangement, concave portions may be located in the bottom surface of the board under the binding mounting regions so as to give desired bending characteristics to the board. | 06-30-2011 |
20120119470 | GLIDING BOARD WITH IMPROVED RESPONSE TO RIDER INPUT - A gliding board with an effective edge length to waist width ratio of 3.8 to about 4.35, a waist width of at least about 250 mm, a core that has an approximately constant thickness of greater than 5 mm along substantially the entire running length of the board and to within about 80-100 mm of the effective edge points, but thins to a thickness of about 2 mm or less in areas nearer the effective edge points, and/or side edges that include a curved, concave sidecut portion at the waist, curved, convex transition zones at the forward and rear effective edge points and a straight section in the running length adjacent each transition zone. | 05-17-2012 |
20120235369 | GLIDING BOARD WITH MODIFIED BENDING CHARACTERISTICS AND EDGE FEATURES ADJACENT BINDING MOUNTING REGIONS - A gliding board may have less resistance to bending in portions within one or both binding mounting regions as compared to portions at or near ends of the binding mounting regions. Some embodiments provide for increased ability to store and release energy when performing certain maneuvers with the board, such as nose presses, ollies and similar moves. Regions of greatest stiffness may be arranged at outer ends of the binding mounting regions, and may be arranged along lines that are transverse to a longitudinal axis of the board. Alternately, a board may include heel and toe convex portions in the heel and toe side edges that are offset along the board length, e.g., so that the heel convex portions are closer to each other and to a longitudinal board center than the toe convex portions. | 09-20-2012 |