Patent application number | Description | Published |
20090057834 | Method for Chemical Mechanical Planarization of Chalcogenide Materials - A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing. | 03-05-2009 |
20090061630 | Method for Chemical Mechanical Planarization of A Metal-containing Substrate - A method using an associated composition for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) is described. This method affords low dishing and local erosion levels on the metal during CMP processing of the metal-containing substrate. | 03-05-2009 |
20100081279 | Method for Forming Through-base Wafer Vias in Fabrication of Stacked Devices - An effective method for forming through-base wafer vias in the fabrication of stacked devices is described. The base wafer can be a silicon wafer in which case the method relates to TSV (through-silicon via) technology. The method affords high removal rates of both silicon and metal (e.g., copper) under appropriate conditions and is tuneable with respect to base wafer material to metal selectivity. | 04-01-2010 |
20100101448 | Polishing Slurry for Copper Films - A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 Å reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days. | 04-29-2010 |
20100167545 | Method and Composition for Chemical Mechanical Planarization of A Metal - A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing. | 07-01-2010 |
20100167546 | Method and Composition for Chemical Mechanical Planarization of A Metal or A Metal Alloy - A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low dishing and erosion levels during CMP processing. | 07-01-2010 |
20130102153 | METHOD AND COMPOSITION FOR CHEMICAL MECHANICAL PLANARIZATION OF A METAL OR A METAL ALLOY - A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low dishing and erosion levels during CMP processing. | 04-25-2013 |
20130178065 | Method and Composition for Chemical Mechanical Planarization of a Metal - A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing. | 07-11-2013 |