Patent application number | Description | Published |
20120261788 | SELF-ALIGNED AIRGAP INTERCONNECT STRUCTURES AND METHODS OF FABRICATION - Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material. Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer. | 10-18-2012 |
20120278878 | SYSTEMS AND METHODS FOR ESTABLISHING SECURE VIRTUAL PRIVATE NETWORK COMMUNICATIONS USING NON-PRIVILEGED VPN CLIENT - Systems and methods are provided for establishing secure VPN communications using processes executing in unprivileged user space. For example, systems and methods for establishing secure VPN communications implement user mode VPN clients and user mode network protocol stacks (e.g., TCP/IP stacks) that operate in user space without root access to an operating system of a computing device. | 11-01-2012 |
20130133043 | AUTHENTICATION IN VIRTUAL PRIVATE NETWORKS - Systems and methods are provided for controlling access to a network. An access request is received from a client application running on a computing device for accessing a remote network. The access request is received over a secure virtual private network connection (VPN) connection established by a user-mode VPN client running in non-privileged user space of the computing device. The access request includes contextual information for use in authenticating a user to access a remote network, wherein the contextual information includes contextual information about the client application requesting access to the remote network. An authentication process is performed using the contextual information to authenticate the user, and a secure VPN connection is established between the client application and the remote network, if the user is authenticated. | 05-23-2013 |
20140124870 | SPUTTER AND SURFACE MODIFICATION ETCH PROCESSING FOR METAL PATTERNING IN INTEGRATED CIRCUITS - One embodiment of an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices, wherein at least some of the plurality of conductive lines have pitches of less than one hundred nanometers and sidewall tapers of between approximately eighty and ninety degrees. Another embodiment of an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices, wherein at least some of the plurality of conductive lines are fabricated by providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer and sputter etching the layer of conductive metal using a methanol plasma, wherein a portion of the layer of conductive metal that remains after the sputter etching forms the one or more conductive lines. | 05-08-2014 |
20140124935 | SPUTTER AND SURFACE MODIFICATION ETCH PROCESSING FOR METAL PATTERNING IN INTEGRATED CIRCUITS - One embodiment of an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices, wherein at least some of the plurality of conductive lines have line widths of less than forty nanometers. Another embodiment of an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices, wherein at least some of the plurality of conductive lines are fabricated by providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer, performing a first sputter etch of the layer of conductive metal using a methanol plasma, and performing a second sputter etch of the layer of conductive metal using a second plasma, wherein a portion of the layer of conductive metal that remains after the second sputter etch forms the one or more conductive lines. | 05-08-2014 |
20140127906 | SPUTTER AND SURFACE MODIFICATION ETCH PROCESSING FOR METAL PATTERNING IN INTEGRATED CIRCUITS - Fabricating conductive lines in an integrated circuit includes providing a conductive metal in a multi-layer structure, performing a first sputter etch of the conductive metal using methanol plasma, and performing a second sputter etch of the conductive metal using a second plasma, wherein a portion of the conductive metal that remains after the second sputter etch forms the conductive lines. Alternatively, fabricating conductive lines includes providing a conductive metal as an intermediate layer in a multi-layer structure, etching the multi-layer structure to expose the conductive metal, performing a first etch of the conductive metal using methanol plasma, performing a second sputter etch of the conductive metal using a second plasma, wherein a portion of the conductive metal that remains after the second sputter etch forms the conductive lines, forming a liner that surrounds the conductive lines, and depositing a dielectric layer on the multi-layer structure. | 05-08-2014 |
20140159227 | PATTERNING TRANSITION METALS IN INTEGRATED CIRCUITS - Fabricating conductive lines in an integrated circuit includes patterning a layer of a transition metal to form the conductive lines and depositing a protective cap on at least some of the one or more conductive lines. Alternatively, fabricating conductive lines in an integrated circuit includes patterning a layer of a transition metal to form the conductive lines, wherein the conductive lines have sub-eighty nanometer pitches, and depositing a protective cap on at least some of the conductive lines, wherein the protective cap has a thickness between approximately five and fifteen nanometers. Alternatively, fabricating conductive lines in an integrated circuit includes patterning a layer of a transition metal to form the conductive lines, wherein the conductive lines have sub-eighty nanometer line widths, and depositing a protective cap on at least some of the conductive lines, wherein the protective cap has a thickness between approximately five and fifteen nanometers. | 06-12-2014 |
20140159242 | PATTERNING TRANSITION METALS IN INTEGRATED CIRCUITS - An integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal. Alternatively, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices and having sub-eighty nanometer pitches, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal, wherein the protective cap has a thickness between approximately five and fifteen nanometers. Alternatively, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices and having sub-eighty nanometer line widths, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal, wherein the protective cap has a thickness between approximately five and fifteen nanometers. | 06-12-2014 |
20140201813 | ENHANCING DIRECTORY SERVICE AUTHENTICATION AND AUTHORIZATION USING CONTEXTUAL INFORMATION - Systems and methods are provided for authenticating and authorizing network access requests using directory services in which the directory service authentication and authorization procedures are enhanced using contextual information. | 07-17-2014 |
20140201814 | ENHANCING DIRECTORY SERVICE AUTHENTICATION AND AUTHORIZATION USING CONTEXTUAL INFORMATION - Systems and methods are provided for authenticating and authorizing network access requests using directory services in which the directory service authentication and authorization procedures are enhanced using contextual information. | 07-17-2014 |
20140337526 | LOCATION-BASED DOMAIN NAME SYSTEM SERVICE DISCOVERY - Systems and methods are provided for location-based Domain Name System (DNS) service discovery using a central DNS server in which network resources are aggregated by geographic location (e.g., subnets) and defined using DNS service discovery records that are mapped to corresponding geographic locations. | 11-13-2014 |
20140337530 | LOCATION-BASED DOMAIN NAME SYSTEM SERVICE DISCOVERY - Systems and methods are provided for location-based Domain Name System (DNS) service discovery using a central DNS server in which network resources are aggregated by geographic location (e.g., subnets) and defined using DNS service discovery records that are mapped to corresponding geographic locations. | 11-13-2014 |
20150054122 | METHOD FOR FORMING SELF-ALIGNED AIRGAP INTERCONNECT STRUCTURES - Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material, Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer. | 02-26-2015 |