Belen, US
Rodolfo Belen, San Jose, CA US
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20100240151 | Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices - A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps each followed by two plasma etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers. The hard mask has an upper Ta layer with a thickness of 300 to 400 Angstroms and a lower NiCr layer less than 50 Angstroms thick. The upper Ta layer is etched with a fluorocarbon etch while lower NiCr layer and underlying MTJ layers are etched with a CH | 09-23-2010 |
Rodolfo Belen, San Francisco, CA US
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20120028373 | Bi-layer hard mask for the patterning and etching of nanometer size MRAM devices - A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers. | 02-02-2012 |
Rodolfo P. Belen, San Francisco, CA US
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20090218317 | METHOD TO CONTROL UNIFORMITY USING TRI-ZONE SHOWERHEAD - Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable. | 09-03-2009 |
20090221149 | MULTIPLE PORT GAS INJECTION SYSTEM UTILIZED IN A SEMICONDUCTOR PROCESSING SYSTEM - An apparatus having a multiple gas injection port system for providing a high uniform etching rate across the substrate is provided. In one embodiment, the apparatus includes a nozzle in the semiconductor processing apparatus having a hollow cylindrical body having a first outer diameter defining a hollow cylindrical sleeve and a second outer diameter defining a tip, a longitudinal passage formed longitudinally through the body of the hollow cylindrical sleeve and at least partially extending to the tip, and a lateral passage formed in the tip coupled to the longitudinal passage, the lateral passage extending outward from the longitudinal passage having an opening formed on an outer surface of the tip. | 09-03-2009 |
20090221150 | ETCH RATE AND CRITICAL DIMENSION UNIFORMITY BY SELECTION OF FOCUS RING MATERIAL - A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface. | 09-03-2009 |
20090272492 | PLASMA REACTOR WITH CENTER-FED MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub. | 11-05-2009 |
20090275206 | PLASMA PROCESS EMPLOYING MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge. | 11-05-2009 |
Rodolfo P. Belen US
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20090142930 | Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process - A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels. | 06-04-2009 |
20090156011 | Method of controlling CD bias and CD microloading by changing the ceiling-to-wafer gap in a plasma reactor - In a plasma etch process, critical dimension (CD), CD bias and CD bias microloading are controlled independently of plasma process conditions or parameters, such as RF power levels, pressure and gas flow rate, by depressing or elevating the workpiece support pedestal to vary the gap between the workpiece and the chamber ceiling facing the workpiece, using an axially adjustable workpiece support. | 06-18-2009 |
Shimon Belen, Southfield, MI US
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20130297523 | SYSTEM AND METHOD FOR USING ELECTRONIC CONTACT IDENTIFIER FOR COMPLETING A SALES TRANSACTION - A computerized system and method for obtaining a shipping address needed to complete a sales transaction. In a preferred embodiment, the computerized system and method utilizes at least one electronic contact identifier to cause an electronic message, which has been generated by the system, to be delivered to an intended recipient of at least one item that has been selected for purchase at an ecommerce site. The generated message may contain a link to a webpage which can be accessed by the intended recipient and where he or she may provide the system with his or her shipping address. Upon obtaining the shipping address, the system may then cause a payment for the at least one item to be processed and the at least one item to be shipped to the obtained address. | 11-07-2013 |
Wilson Manuel Toro Belen, Humaceao, PR US
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20150073606 | COOLING SYSTEM MANAGEMENT FOR SERVER FACILITY - A Computer Room Air Handler (CRAH) Unit conditions and provides cooling air to a first zone. A second zone collects return air from the first zone, where multiple servers are positioned between the first zone and the second zone such that air heated by the servers is pushed into the second zone. The first zone is bound from the second zone by one or more racks housing the servers and insulating materials in an area between each server to prevent the cooling air in the first zone from mixing with the return air in the second zone. A third zone, representing a remaining area of the server facility, is maintained at a predefined temperature, where the temperature is higher than a temperature of the first zone and lower than a temperature of the second zone. | 03-12-2015 |