Patent application number | Description | Published |
20090024378 | SIMULATION METHOD FOR EFFICIENT CHARACTERIZATION OF ELECTRONIC SYSTEMS UNDER VARIABILITY EFFECTS - A method of determining the behavior of an electronic system comprising electronic components under variability is disclosed. In one aspect, the method comprises for at least one parameter of at least one of the electronic components, showing variability defining a range and a population of possible values within the range, each possible value having a probability of occurrence, thereby defining an input domain. The method further comprises selecting inputs randomly from the input domain, wherein the probability to sample (PTS) is obtained from the probability of occurrence (PTOIR). The method further comprises performing simulation to obtain the performance parameters of the electronic system, thereby defining an output domain sample. The method further comprises aggregating results of the individual computations into the parameter/variability of the electronic system and assigning a frequency of occurrence (FoO) to the resulting sample, the parameter variability and the frequency of occurrence defining the behavior. | 01-22-2009 |
20090031268 | METHODS FOR CHARACTERIZATION OF ELECTRONIC CIRCUITS UNDER PROCESS VARIABILITY EFFECTS - A method for determining an estimate of statistical properties of an electronic system comprising individual components subject to manufacturing process variability is disclosed. In one aspect, the method comprises obtaining statistical properties of the performance of individual components of the electronic system, obtaining information about execution of an application on the system, simulating execution of the application based on the obtained information about execution of the application on the system for a simulated electronic system realization constructed by selecting individual components with the obtained statistical properties determining the delay and energy of the electronic system, and determining the statistical properties of the delay and energy of the electronic system. | 01-29-2009 |
20100052020 | SEMICONDUCTOR SUBSTRATE AND MOS BASED PIXEL STRUCTURE - The invention relates to a semiconductor substrate | 03-04-2010 |
20100213353 | ANALOG PHOTON COUNTING - A pixel for the detection of electromagnetic radiation or impinging high energy particles, in particular for detecting X-ray photons, comprises a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, a converter for converting the radiation signal into a pulse train, and an analog accumulator for accumulating the pulses of a pulse train to an analog signal for readout. The analog accumulator is adapted such that the analog signal is non-linearly proportional to the pulse count. Such non-linear analog accumulator has the advantage of an large dynamic range. | 08-26-2010 |
20100252717 | ACTIVE-PIXEL SENSOR - The invention relates to an active-pixel sensor including an electromagnetic radiation detector, comprising a transistor amplifier, a series memory capacitor and a parallel load capacitor that are driven by the transistor amplifier. | 10-07-2010 |
20110210235 | PHOTON SHARPENING - The present invention provides an array of pixels for the detection of a flash of electromagnetic radiation or a cloud of impinging high energy particles. Each pixel in the array comprises a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, and a converter for converting the radiation signal into pulses. The array further comprises a circuit for comparing one or more of the criteria pulse amplitude, pulse arrival time, time to convert a pulse in a digital signal, pulse duration time, pulse rise and fall time or integral of pulse over time for pulses coinciding on pixels in a predetermined neighborhood. The array also comprises a circuit for suppressing those pulses that are compared negatively versus the corresponding pulses in another pixel of the neighborhood for the same one or more criteria. A corresponding method is also provided. | 09-01-2011 |
20110267505 | PIXEL WITH REDUCED 1/F NOISE - A pixel is provided, comprising at least one transistor, the pixel being arranged for cycling the at least one transistor between two or more bias states, e.g. inversion and accumulation, during a readout phase. Due to the cycling between the at least two bias states, the correlation over time of the 1/f noise of the readout signals is broken, thus taking multiple samples and applying an operator onto the samples can reduce the effect of the 1/f noise to arbitrary low levels. | 11-03-2011 |
20120286141 | PIXEL WITH REDUCED 1/F NOISE - A pixel is provided, comprising at least one transistor, the pixel being arranged for cycling the at least one transistor between two or more bias states, e.g. inversion and accumulation, during a readout phase. Due to the cycling between the at least two bias states, the correlation over time of the 1/f noise of the readout signals is broken, thus taking multiple samples and applying an operator onto the samples can reduce the effect of the 1/f noise to arbitrary low levels. | 11-15-2012 |
20120305786 | COMBINED INTEGRATION AND PULSE DETECTION - A pixel for the detection of electromagnetic radiation or high energy particles or charge packets, in particular for detecting X-ray photons, comprises a radiation receptor for converting the radiation into a sensing signal, the pixel being adapted for performing both pulse detection and integration of the same sensing signal. | 12-06-2012 |