Banerji
Abinash Banerji, Berlin DE
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20110165014 | ALUMINIUM-BASED GRAIN REFINER - ALUMINIUM-BASED GRAIN REFINER, which contains zinc, titanium and carbon, synthesized by means of aluminium fusion and the subsequent addition of titanium, zinc and carbon. The microstructure of the master alloy is comprised by an alpha-aluminium matrix, intermetallic phase of TiAl | 07-07-2011 |
Amit Banerji, Bangalore IN
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20080269921 | System and Method for Providing Support Assistance - A system and method for providing support assistance and guidance include the creation of process maps and use of such maps in a service application. Process maps may be created using a creation tool that embeds interactive features in process steps. The interactive features may include the activation of an application, linking of a website and/or the display of an image or document. Process maps may be associated with clients/customers, applications and/or issue categories. Users may use and follow the process map to aid customers in resolving various issues such as technical questions and troubleshooting. Tracking and logging components may be used to track information relating to a case including the interactions of a support personnel and/or information entered. Compliance may also be measured based on, for example, an amount of time spent on various processes. Change management system may also be used to manage changes made to process maps. | 10-30-2008 |
20080270207 | Compliance Monitoring - A system and method for determining compliance for one or more information technology services may generate on the spot compliance reports based on real-time data. Compliance data may be retrieved or received from a variety of sources including incident diagnostic utilities, manual data entry and third-party software or applications. A compliance system and method may monitor the data being generated from each of the various sources in a real-time fashion, generating compliance information based thereon. | 10-30-2008 |
Ananda Banerji, West Linn, OR US
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20110135557 | HARDMASK MATERIALS - Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of Si | 06-09-2011 |
20120276752 | HARDMASK MATERIALS - Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of Si | 11-01-2012 |
20130330932 | HARDMASK MATERIALS - Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of Si | 12-12-2013 |
20150235835 | HIGH GROWTH RATE PROCESS FOR CONFORMAL ALUMINUM NITRIDE - Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating (a) through (d). Increased growth rate and 100% step coverage and conformality are attained. | 08-20-2015 |
20150249013 | CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TRANSISTORS - Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors. | 09-03-2015 |
20160064211 | HIGH GROWTH RATE PROCESS FOR CONFORMAL ALUMINUM NITRIDE - Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating (a) through (d). Increased growth rate and 100% step coverage and conformality are attained. | 03-03-2016 |
Ananda K. Banerji, West Linn, OR US
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20160071953 | SACRIFICIAL PRE-METAL DIELECTRIC FOR SELF-ALIGNED CONTACT SCHEME - Various embodiments herein relate to formation of contact etch stop layers in the context of forming gates and contacts. In certain embodiments, a novel process flow is used, which may involve the deposition and removal of a sacrificial pre-metal dielectric material before a particular contact etch stop layer is formed. An auxiliary contact etch stop layer may be used in addition to a primary etch stop layer that is deposited previously. In certain cases the contact etch stop layer is a metal-containing material such as a nitride or an oxide. The contact etch stop layer may be deposited through a cyclic vapor deposition in some embodiments. The process flows disclosed herein provide improved protection against over-etching gate stacks, thereby minimizing gate-to-contact leakage. Further, the disclosed process flows result in wider flexibility in terms of materials and deposition conditions used for forming various dielectric materials, thereby minimizing parasitic capacitance. | 03-10-2016 |
Revanta Banerji, Beacon, NY US
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20080263488 | METHOD FOR GENERATING A SKEW SCHEDULE FOR A CLOCK DISTRIBUTION NETWORK CONTAINING GATING ELEMENTS - A method for generating a skew schedule for a clock distribution network generates a schedule that accounts for both the timing requirements of the memory elements at the endpoints of the clock distribution network and the timing requirements of the gating signals that feed clock gates and other clock control elements within the clock distribution network. The method provides a total solution to the skew scheduling problem by way of a two-phase iterative process. The two phases of the process alternately keep track of the schedule generated by first taking the gating elements of the clock distribution network into account, followed by balancing any remaining skew that may exist on the memory elements of the same clock distribution network. Finally, the method describes a procedure to post-process the skew schedule to ensure that it can be implemented using a clock tree generation tool. | 10-23-2008 |
20110276933 | Method for Supporting Multiple Libraries Characterized at Different Process, Voltage, and Temperature Points - A method for accurately performing a timing, power, and noise analysis by pre-processing the characterization points of the available libraries, storing time consuming parts of the analysis and utilizing the pre-processed information during active runs to calculate the attributes at a desired PVT point. The PVT space is preferably sub-divided into triangular or rectangular regions, preferably obtained using Delaunay triangulation. In one embodiment, the invention performs an up-front pre-processing step on the characterized libraries to compute the static portion of the interpolation function that is independent of the specific instance; and a coefficient matrix that allows for interpolation of specific instances. | 11-10-2011 |
Sanjeev Banerji, Cambridge, MA US
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20110078214 | MANAGING MESSAGE QUEUES - A method, and corresponding system and software, is described for writing data to a plurality of queues, each portion of the data being written to a corresponding one of the queues. The method includes, without requiring concurrent locking of more than one queue, determining if a space is available in each queue for writing a corresponding portion of the data, and if available, reserving the spaces in the queues. The method includes writing each portion of the data to a corresponding one of the queues. | 03-31-2011 |
Subhasis Banerji, Singapore SG
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20140200432 | SYSTEMS, APPARATUSES, DEVICES, AND PROCESSES FOR SYNERGISTIC NEURO-PHYSIOLOGICAL REHABILITATION AND/OR FUNCTIONAL DEVELOPMENT - A system for facilitating a subject's functional development includes sensing devices configured for sensing mind state signals; sensing devices configured for sensing body state signals; and a set of processing resources configured for generating a mind state indicator/measure, a body state indicator/measure, and a mind-body synergy indicator/measure that corresponds to which each of the subject's mind state and body state are synergistically aligned for facilitating the subject's functional development. The system can be configured for concurrently presenting a set of activities involving a model body part; engaging in attempted imitation of the set of activities by way of attempted movement of a body part that is a mirror image of the model body part; presenting an indication of an extent to which each of the mind state and body state are cooperative with respect to performance of the set of activities; and presenting an indication of relaxation. | 07-17-2014 |
Sunand Banerji, Stoneham, MA US
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20080314557 | THERMOELECTRIC DEVICE AND HEAT SINK ASSEMBLY WITH REDUCED EDGE HEAT LOSS - An assembly that includes one or more thermoelectric devices and a heat sink and that corrects the problem of an uneven heating effect across the area occupied by the devices due to a lateral heat loss at the edges of the devices or other anomalies among the devices is constructed with a heat sink that contains voids in the slab or flat surface that is in thermal contact with the thermoelectric devices. The voids are located at or within the periphery of the area that is directly aligned with the thermoelectric devices and are concentrated in regions relatively close to the periphery, leaving an area in the center of the slab that is either void-free or of a relatively low void density. | 12-25-2008 |
20100003725 | LOW-MASS SAMPLE BLOCK WITH RAPID RESPONSE TO TEMPERATURE CHANGE - A sample block for use in the polymerase chain reaction, DNA sequencing, and other procedures that involve the performance of simultaneous reactions in multiple samples with temperature control by heating or cooling elements contacting the bottom surface of the block is improved by the inclusion of hollows in the block that are positioned to decrease the mass of the block in the immediate vicinity of the wells. | 01-07-2010 |
20100055743 | LOW-MASS SAMPLE BLOCK WITH RAPID RESPONSE TO TEMPERATURE CHANGE - A sample block for use in the polymerase chain reaction, DNA sequencing, and other procedures that involve the performance of simultaneous reactions in multiple samples with temperature control by heating or cooling elements contacting the bottom surface of the block is improved by the inclusion of hollows in the block that are positioned to decrease the mass of the block in the immediate vicinity of the wells. | 03-04-2010 |
20130122552 | LOW-MASS SAMPLE BLOCK WITH RAPID RESPONSE TO TEMPERATURE CHANGE - A sample block for use in the polymerase chain reaction, DNA sequencing, and other procedures that involve the performance of simultaneous reactions in multiple samples with temperature control by heating or cooling elements contacting the bottom surface of the block is improved by the inclusion of hollows in the block that are positioned to decrease the mass of the block in the immediate vicinity of the wells. | 05-16-2013 |
20140170706 | LOW-MASS SAMPLE BLOCK WITH RAPID RESPONSE TO TEMPERATURE CHANGE - A sample block for use in the polymerase chain reaction, DNA sequencing, and other procedures that involve the performance of simultaneous reactions in multiple samples with temperature control by heating or cooling elements contacting the bottom surface of the block is improved by the inclusion of hollows in the block that are positioned to decrease the mass of the block in the immediate vicinity of the wells. | 06-19-2014 |
Versha Banerji, Winnipeg CA
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20150313890 | KINASE INHIBITORS AND METHODS OF USE THEREOF - The present invention provides compounds of formula I, pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof. Compounds of the present invention are useful for inhibiting kinase (e.g., GSK3 (e.g., GSK3α or GSK3β) or CK1) activity. The present invention further provides methods of using the compounds described herein for treating kinase-mediated disorders, such as neurological diseases, psychiatric disorders, metabolic disorders, and cancer. | 11-05-2015 |