Baehr-Jones
Thomas Baehr-Jones, Newark, DE US
Patent application number | Description | Published |
---|---|---|
20140334764 | BROADBAND OPTICAL ISOLATOR USING PHASE MODULATORS AND MACH-ZEHNDER INTERFEROMETERS - Optical devices that do not employ magneto-optics materials or non-linear effects to achieve non-reciprocal light propagation. The optical devices are compatible with the fabrication of monolithic photonic integrated circuits such as silicon-on-insulator planar lightwave circuits. In particular the devices use demonstrated passive (beam-splitters, waveguides) and active (phase modulators) components to achieve non-reciprocal light propagation. The devices can be used as non-reciprocal optical modulators or optical isolators when driven by a periodic radio frequency (RF) electric source. | 11-13-2014 |
Thomas Baehr-Jones, Arcadia, CA US
Patent application number | Description | Published |
---|---|---|
20150104176 | OPERATION AND STABILIZATION OF MOD-MUX WDM TRANSMITTERS BASED ON SILICON MICRORINGS - A transmitter comprising a plurality of modulator and multiplexer (Mod-MUX) units, each Mod-MUX unit operating at an optical wavelength different from the other Mod-MUX units. The transmitter can additional include in each Mod-MUX unit two optical taps and three photodetectors that are configured to allow the respective Mod-MUX unit to be tuned to achieve thermal stabilization and achieve effective modulation and WDM operation across a range of temperatures. The Mod-MUX transmitter avoids the use of a frequency comb. The Mod-MUX transmitter avoids cross-modulation between different modulators for different laser signals. | 04-16-2015 |
20150139264 | SAGNAC LOOP MIRROR BASED LASER CAVITY ON SILICON PHOTONICS PLATFORM - We have demonstrated a novel Sagnac loop and micro-ring based laser cavity which is simple and reliable, with accurately controlled reflectivity and negligible excess loss. The resonant wavelength of a 2 μm radius micro-ring is shown to be lithographically controlled to a standard deviation of 3.6 nm. Both C- and O-Band lasers based on Sagnac loop mirror and micro-ring cavity have been demonstrated. The lasers are shown to be able to be modulated at 40 Gb/s. | 05-21-2015 |
20150180201 | QUANTUM DOT SOA-SILICON EXTERNAL CAVITY MULTI-WAVELENGTH LASER - A hybrid external cavity multi-wavelength laser using a QD RSOA and a silicon photonics chip is demonstrated. Four lasing modes at 2 nm spacing and less than 3 dB power non-uniformity were observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10 | 06-25-2015 |
20150229408 | DISTRIBUTED TRAVELING-WAVE MACH-ZEHNDER MODULATOR DRIVER - A distributed traveling-wave Mach-Zehnder modulator driver having a plurality of modulation stages that operate cooperatively (in-phase) to provide a signal suitable for use in a 100 Gb/s optical fiber transmitter at power levels that are compatible with conventional semiconductor devices and conventional semiconductor processing is described. | 08-13-2015 |
Thomas Wetteland Baehr-Jones, Arcadia, CA US
Patent application number | Description | Published |
---|---|---|
20160033765 | COMPACT AND LOW LOSS Y-JUNCTION FOR SUBMICRON SILICON WAVEGUIDE - A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers. | 02-04-2016 |
Tom Baehr-Jones, Newark, DE US
Patent application number | Description | Published |
---|---|---|
20140178005 | Compact and low loss Y-junction for submicron silicon waveguide - A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers. | 06-26-2014 |
20140341497 | ULTRA-RESPONSIVE PHASE SHIFTERS FOR DEPLETION MODE SILICON MODULATORS - A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required. | 11-20-2014 |