Patent application number | Description | Published |
20130009111 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, SPUTTERING TARGET, AND THIN FILM TRANSISTOR - Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W. | 01-10-2013 |
20130026470 | WIRING STRUCTURE, DISPLAY APPARATUS, AND SEMICONDUCTOR DEVICE - Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer. The Cu alloy layer is a laminated structure containing a Cu—X alloy layer (a first layer) and a second layer. | 01-31-2013 |
20130032798 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements. | 02-07-2013 |
20130119324 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si. | 05-16-2013 |
20130122323 | Cu ALLOY FILM FOR DISPLAY DEVICE AND DISPLAY DEVICE - The present invention provides a display device which is provided with a Cu alloy film having high adhesion to an oxygen-containing insulator layer and a low electrical resistivity. The present invention relates to a Cu alloy film for a display device, said film having a stacked structure including a first layer (Y) composed of a Cu alloy containing, in total, 1.2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb and Mn, and a second layer (X) composed of pure Cu or a Cu alloy having Cu as a main component and an electrical resistivity lower than that of the first layer (Y). A part of or the whole first layer (Y) is directly in contact with an oxygen-containing insulator layer ( | 05-16-2013 |
20130140066 | CU ALLOY INTERCONNECTION FILM FOR TOUCH-PANEL SENSOR AND METHOD OF MANUFACTURING THE INTERCONNECTION FILM, TOUCH-PANEL SENSOR, AND SPUTTERING TARGET - Provided is a Cu alloy interconnection film for touch-panel sensors, which excels in oxidation resistance and adhesion properties, and is low in electrical resistance. The interconnection film contains at least one alloy element selected from a group consisting of Ni, Zn, and Mn by 0.1 to 40 atom % in total, and the remainder contains Cu and inevitable impurities. Alternatively, the interconnection film is made of a Cu alloy containing at least one element selected from the group consisting of Ni, Zn, and Mn. In this case, if the Cu alloy contains one element, Ni is contained by 0.1 to 6 atom %, or Zn is contained by 0.1 to 6 atom %, or Mn is contained by 0.1 to 1.9 atom %. On the other hand, if two or more alloy elements are contained, the alloy elements are contained by 0.1 to 6 atom % in total (wherein, Mn is contained by [((6−x)×2)/6] atom % or less if Mn is contained; here, x is a total adding amount of Ni and Zn). | 06-06-2013 |
20130240802 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and at least one type of element (X group element) selected from an X group comprising Si, Hf, Ga, Al, Ni, Ge, Ta, W and Nb. The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided. | 09-19-2013 |
20130248855 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided. | 09-26-2013 |
20130248858 | INTERCONNECT STRUCTURE AND SPUTTERING TARGET - The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer. The present invention makes it possible to obtain an interconnect structure having excellent switching characteristics and high stress resistance, and in particular, showing a small variation of threshold voltage before and after the stress tests, and thereby having high stability. | 09-26-2013 |
20130249571 | TOUCH PANEL SENSOR - Provided is a touch panel sensor which has excellent durability particularly in a longitudinal direction as in the case in which an indentation load is imposed, rarely undergoes the increase in electrical resistivity which may be caused by the disconnection of a wire or as elapse of time, has high reliability and high glossiness, and also has an excellent color-displaying capability. This touch panel sensor comprises a transparent conductive film and a wiring that is connected to the transparent conductive film, wherein the wiring comprises a refractory metal film, an Al alloy film and a high-melting-point metal film in this order when observed from the side of a substrate, and wherein the Al alloy film contains a rare earth element in an amount of 0.05-5 atomic %. It is preferred for the touch panel sensor that the hardness is 2-3.5 GPa and the density of grain boundary triple junctions in the Al alloy structure is 2×10 | 09-26-2013 |
20130270109 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of Al, Si, Ta, Ti, La, Mg and Nb. The present invention makes it possible to provide oxides for semiconductor layers of thin-film transistors, in which connection thin-film transistors with In—Zn—O oxide semiconductors not containing Ga have favorable switching characteristics and high stress resistance, and in particular, show a small variation of the threshold voltage before and after positive bias stress tests, thereby having high stability. | 10-17-2013 |
20130341617 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR HAVING SAID OXIDE, AND THIN-FILM TRANSISTOR - The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≦0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])≧0.5. [In]/([In]+[Zn]+[Sn])≦0.3 - - - (1), [In]/([In]+[Zn]+[Sn])≦1.4×{[Zn]/([Zn]+[Sn])}−0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])≦0.83 - - - (3), and 0.1≦[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching. | 12-26-2013 |
20140091306 | WIRING STRUCTURE AND DISPLAY DEVICE - Provided is a technique that allows oxidation of Cu wires to be effectively prevented during plasma processing when forming a passivation film for a display device that utilizes an oxide semiconductor layer. This wiring structure comprises a semiconductor layer (oxide semiconductor) for a thin film transistor, a Cu alloy film (laminated structure comprising a first layer (X) and a second layer (Z)), and a passivation film that are formed on a substrate, starting from the substrate side. The first layer (X) is made of an element that exhibits low electrical resistivity, such as pure Cu; and the second layer contains a plasma-oxidation-resistance improving element. The second layer (Z) is directly connected, at least partially, to the passivation film. | 04-03-2014 |
20140131688 | INTERCONNECTION STRUCTURE INCLUDING REFLECTIVE ANODE ELECTRODE FOR ORGANIC EL DISPLAYS - Provided is an interconnection structure comprising a reflective anode electrode for organic EL displays, which is provided with an Al alloy film that has excellent durability and is capable of assuring stable light emission characteristics even in cases where an Al reflective film is directly connected with an organic layer, while achieving high yield. The present invention is related to an interconnection structure which comprises, on a substrate, an Al alloy film that constitutes a reflective anode electrode for organic EL displays and an organic layer that contains a light-emitting layer. In the interconnection structure, the Al alloy film contains a specific rare earth element in an amount of 0.05-5% by atom and the organic layer is directly connected onto the Al alloy film. | 05-15-2014 |
20140167038 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %. | 06-19-2014 |
20140346498 | THIN FILM TRANSISTOR, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide. | 11-27-2014 |
20150076489 | OXIDE FOR SEMICONDUCTOR LAYER IN THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, DISPLAY DEVICE, AND SPUTTERING TARGET - Provided is an oxide semiconductor configured to be used in a thin film transistor having high field-effect mobility; a small shift in threshold voltages against light and bias stress; excellent stress resistance. The oxide semiconductor has also excellent resistance to a wet-etchant for patterning of a source-drain electrode. The oxide semiconductor comprises In, Zn, Ga, Sn and O, and satisfies the requirements represented by expressions (1) to (4) shown below, wherein [In], [Zn], [Ga], and [Sn] represent content (in atomic %) of each of the elements relative to the total content of all the metal elements other than oxygen in the oxide. | 03-19-2015 |