Patent application number | Description | Published |
20080258045 | SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device, includes: a pixel array area including an unit pixel having a photoelectric conversion element and a transfer gate; a first supply voltage control means for supplying a first control voltage to a control electrode of the transfer gate; a second supply voltage control means for sequentially supplying one or plural second control voltages having a voltage value different from the first control voltage to the control electrode; a third supply voltage control means for supplying a third control voltage having the same voltage value as the second control voltages once or plural times prior to one or plural supplies of the second control voltages; a first driving means for reading signal charges from the transfer gate when the first control voltage is supplied; and a second driving means for reading signal charges from the transfer gate once and more when the second control voltage is sequentially applied. | 10-23-2008 |
20090020690 | OPTICAL MEMBER, SOLID-STATE IMAGING DEVICE, AND MANUFACTURING METHOD - An optical member includes high refractive index layers having a great refractive index and low refractive index layers having a small refractive index, which are each relatively thin as compared with an optical length, disposed alternately in the lateral direction as to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light. | 01-22-2009 |
20090039340 | METHOD AND APPARATUS FOR ACQUIRING PHYSICAL INFORMATION, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING ARRAY OF A PLURALITY OF UNIT COMPONENTS FOR DETECTING PHYSICAL QUANTITY DISTRIBUTION, LIGHT-RECEIVING DEVICE AND MANUFACTURING METHOD THEREFOR, AND SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR - Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of a plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefore are provided. The method for acquiring physical information uses a device for detecting a physical distribution, the device including a detecting part for detecting an electromagnetic wave and a unit signal generating part for generating a corresponding unit signal on the basis of the quantity of the detected electromagnetic wave. The detecting part includes a stacked member having a structure in which a plurality of layers having different refractive indexes between the adjacent ones and each having a predetermined thickness is stacked, the stacked member being provided on the incident surface side to which the electromagnetic wave is incident and having the characteristic that a predetermined wavelength region component of the electromagnetic wave is reflected, and the remainder is transmitted. | 02-12-2009 |
20090147101 | Solid-state imaging device, method of manufacturing the same, and camera - A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and an inner-layer lens. Each of the plurality of arrayed pixels includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is configured to block infrared light and faces a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The inner-layer lens is formed below the optical inner filter layer. | 06-11-2009 |
20090215220 | SOLID-STATE IMAGE CAPTURING DEVICE, IMAGE CAPTURING DEVICE, AND MANUFACTURING METHOD OF SOLID-STATE IMAGE CAPTURING DEVICE - A solid-state image capturing device, includes a semiconductor board, upon which same semiconductor board are disposed in a predetermined order: a first detecting unit for detecting a first wavelength region component within an electromagnetic wave; and a second detecting unit for detecting a second wavelength region component which is longer wavelength side than at least the first wavelength region component, wherein in the depth direction from the surface of the semiconductor board, a valid region where a first electroconductive type dopant of the second detecting unit is formed reaches a portion deeper than a valid region where a first electroconductive type dopant of the first detecting unit is formed. | 08-27-2009 |
20090267244 | METHOD OF MANUFACTURING AN OPTICAL MEMBER HAVING STACKED HIGH AND LOW REFRACTIVE INDEX LAYERS - A method of making an optical member including high refractive index layers and low refractive index layers, which are each relatively thin as compared with an optical length, and disposed alternately in the lateral direction with respect to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light. | 10-29-2009 |
20090317935 | INFORMATION ACQUIRING METHOD, INFORMATION ACQUIRING APPARATUS, SEMICONDUCTOR DEVICE COMPRISING ARRAY OF PLURALITY OF UNIT COMPONENTS FOR DETECTING PHYSICAL QUANTITY DISTRIBUTION, AND SEMICONDUCTOR MANUFACTURING METHOD - A method for manufacturing a semiconductor device for detecting a physical amount distribution, the semiconductor device comprising unit components arrayed in a predetermined order, the unit components each including a unit signal generation portion for detecting an electromagnetic wave and outputting the corresponding unit signal. A diffraction grating is provided on the incident light side of a spectral image sensor, the diffraction grating including scatterers, slits, and scatterers disposed in that order. An electromagnetic wave is scattered by the scatterers to produce diffracted waves, and by using the fact that interference patterns between the diffracted waves change with wavelengths, signals are detected for respective wavelengths by photoelectric conversion elements in each photodiode group. | 12-24-2009 |
20100027131 | Optical member, solid-state imaging device, and manufacturing method - An optical member includes high refractive index layers having a great refractive index and low refractive index layers having a small refractive index, which are each relatively thin as compared with an optical length, disposed alternately in the lateral direction as to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light. | 02-04-2010 |
20100038543 | PHYSICAL INFORMATION ACQUISITION METHOD, PHYSICAL INFORMATION ACQUISITION DEVICE, AND SEMICONDUCTOR DEVICE - A physical information acquisition method in which a corresponding wavelength region of visible light with at least one visible light detection unit coupled to an image signal processing unit is detected, each said visible light detection unit comprising a color filter adapted to transmit the corresponding wavelength region of visible light; a wavelength region of infrared light with at least one infrared light detection unit coupled to the image signal processing unit is detected; and, with the signal processing unit, a first signal received from the at least one visible light detection unit by subtracting a product from said first signal is corrected, said product resulting from multiplication of a second signal received from the at least one infrared light detection unit and a predetermined coefficient factor. | 02-18-2010 |
20100171865 | SOLID-STATE IMAGE-TAKING APPARATUS, MANUFACTURING METHOD THEREOF, AND CAMERA - A solid-state image-taking apparatus which have a solid-state image-taking device includes a chip of the solid-state image-taking device, an imaging lens configured to focus incoming light into an image on the solid-state image-taking device, and a material of a refraction index larger than 1, which is arranged between the chip and the imaging lens. | 07-08-2010 |
20100182471 | SOLID-STATE IMAGE DEVICE, METHOD FOR PRODUCING THE SAME, AND IMAGE PICKUP APPARATUS - A solid-state image device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal. | 07-22-2010 |
20100187501 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode. | 07-29-2010 |
20100243869 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a light sensing portion which is formed on a substrate and generates a signal electric charge according to incident light; a rectangular or gradient-index on-chip micro lens formed on a light incident side above the light sensing portion; and a planarized lens layer which covers the on-chip micro lens and is formed in such a manner that a light incident surface is planarized. | 09-30-2010 |
20110096210 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT - A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens is configured so that a vertical cross section, which is a surface perpendicular to the capturing surface, has a rectangular shape, wherein each of the first refractive index layer and the second refractive index layer are arranged adjacent to each other in a direction along the capturing surface, and an interface between the first refractive index layer and the second refractive index layer in the vertical cross section is formed so as to follow a direction perpendicular to the capturing surface. | 04-28-2011 |
20110149102 | SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal. | 06-23-2011 |
20110186952 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THEREOF, AND ELECTRONIC APPARATUS - Provided is a solid-state imaging device including a first photoelectric-conversion-portion selectively receiving a first wavelength light in incident light and performing photoelectric conversion; and a second photoelectric-conversion-portion selectively receiving a second wavelength light which is shorter than the first wavelength, wherein the first photoelectric-conversion-portion is laminated above the second photoelectric-conversion-portion in an imaging area of a substrate so that the second photoelectric-conversion-portion receives the light transmitting the first photoelectric-conversion-portion, wherein a transmitting portion is formed in the first photoelectric-conversion-portion so that the second wavelength light transmits the second photoelectric-conversion-portion more than other portions, and wherein the transmitting portion is formed to include a portion satisfying the following Equation within a width D defined in the direction of the imaging area, a refraction index n of a peripheral portion of the transmitting portion, and the longest wavelength λc of the second wavelength range selectively photoelectrically-converted in the second photoelectric-conversion-portion: | 08-04-2011 |
20110201144 | METHOD OF MANUFACTURING AN OPTICAL MEMBER HAVING STACKED HIGH AND LOW REFRACTIVE INDEX LAYERS - A method of making an optical member including high refractive index layers and low refractive index layers, which are each relatively thin as compared with an optical length, and disposed alternately in the lateral direction with respect to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light. | 08-18-2011 |
20110205634 | OPTICAL MEMBER, SOLID-STATE IMAGING DEVICE, AND MANUFACTURING METHOD - An optical member including high refractive index layers having a great refractive index and low refractive index layers having a small refractive index, which are each relatively thin as compared with an optical length, disposed alternately in the lateral direction as to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light. | 08-25-2011 |
20110221022 | OPTICAL MEMBER, SOLID-STATE IMAGING DEVICE, AND MANUFACTURING METHOD - An optical member including high refractive index layers having a great refractive index and low refractive index layers having a small refractive index, which are each relatively thin as compared with an optical length, disposed alternately in the lateral direction as to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light. | 09-15-2011 |
20110227091 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device is provided with a pixel region in which a plurality of pixels including photoelectric conversion films are arrayed and pixel isolation portions are interposed between the plurality of pixels, wherein the photoelectric conversion film is a chalcopyrite-structure compound semiconductor composed of a copper-aluminum-gallium-indium-sulfur-selenium based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium based mixed crystal and is disposed on a silicon substrate in such a way as to lattice-match the silicon substrate concerned, and the pixel isolation portion is formed from a compound semiconductor subjected to doping concentration control or composition control in such a way as to become a potential barrier between the photoelectric conversion films disposed in accordance with the plurality of pixels. | 09-22-2011 |
20110310282 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE - A solid-state imaging device includes a substrate and a photoelectric conversion region. The substrate has a charge accumulation region. The photoelectric conversion region is provided on the substrate. The photoelectric conversion region is configured to generate signal charges to be accumulated in the charge accumulation region. The photoelectric conversion region comprises a material that is not transparent. | 12-22-2011 |
20120001072 | PHYSICAL INFORMATION ACQUISITION METHOD, PHYSICAL INFORMATION ACQUISITION DEVICE, AND SEMICONDUCTOR DEVICE - A physical information acquisition method in which a corresponding wavelength region of visible light with at least one visible light detection unit coupled to an image signal processing unit is detected, each said visible light detection unit comprising a color filter adapted to transmit the corresponding wavelength region of visible light; a wavelength region of infrared light with at least one infrared light detection unit coupled to the image signal processing unit is detected; and, with the signal processing unit, a first signal received from the at least one visible light detection unit by subtracting a product from said first signal is corrected, said product resulting from multiplication of a second signal received from the at least one infrared light detection unit and a predetermined coefficient factor. | 01-05-2012 |
20130009263 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion regions stacked at different depths within a semiconductor substrate of each pixel to photoelectrically convert light of different wavelength bands, and a discharge region formed between the photoelectric conversion regions adjacent to each other in a depth direction of the semiconductor substrate to discharge charges generated by photoelectric conversion in regions between the photoelectric conversion regions. | 01-10-2013 |
20130038818 | DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A display device includes: a light source section that emits excitation light for each pixel; and a light emitting layer that includes a quantum dot and emits emission light for each of the pixels. The quantum dot generates, based on the excitation light, the emission light having a wavelength longer than a wavelength of the excitation light. | 02-14-2013 |
20130130426 | METHOD OF MANUFACTURING AN OPTICAL MEMBER HAVING STACKED HIGH AND LOW REFRACTIVE INDEX LAYERS - A method of making an optical member including high refractive index layers and low refractive index layers, which are each relatively thin as compared with an optical length, and disposed alternately in the lateral direction with respect to an optical axis. Each width of the high refractive index layers and the low refractive index layers is equal to or smaller than the wavelength order of incident light. | 05-23-2013 |
20130327927 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a light sensing portion which is formed on a substrate and generates a signal electric charge according to incident light; a rectangular or gradient-index on-chip micro lens formed on a light incident side above the light sensing portion; and a planarized lens layer which covers the on-chip micro lens and is formed in such a manner that a light incident surface is planarized. | 12-12-2013 |
20130334494 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode. | 12-19-2013 |
20140009662 | PHYSICAL INFORMATION ACQUISTISION METHOD, PHYSICAL INFORMATION ACQUISITION DEVICE, AND SEMICONDUCTOR DEVICE - A physical information acquisition method in which a corresponding wavelength region of visible light with at least one visible light detection unit coupled to an image signal processing unit is detected, each said visible light detection unit comprising a color filter adapted to transmit the corresponding wavelength region of visible light; a wavelength region of infrared light with at least one infrared light detection unit coupled to the image signal processing unit is detected; and, with the signal processing unit, a first signal received from the at least one visible light detection unit by subtracting a product from said first signal is corrected, said product resulting from multiplication of a second signal received from the at least one infrared light detection unit and a predetermined coefficient factor. | 01-09-2014 |
20140061439 | SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS WITH SOLID-STATE IMAGING DEVICE, AND DISPLAY DEVICE - There is provided a solid-state imaging device including a photoelectric conversion unit, and a reflecting plate that includes a first portion that is provided on a side opposing a light incidence side with respect to the photoelectric conversion unit and formed at a center of a region in which light beams are collected, and a second portion that is formed on a boundary of adjacent regions to be convex on the incidence side with respect to the first portion, and collects reflected light beams within the regions by generating a phase difference between reflected light beams on the first portion and reflected light beams on the second portion. | 03-06-2014 |
20140077326 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT - A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens is configured so that a vertical cross section, which is a surface perpendicular to the capturing surface, has a rectangular shape, wherein each of the first refractive index layer and the second refractive index layer are arranged adjacent to each other in a direction along the capturing surface, and an interface between the first refractive index layer and the second refractive index layer in the vertical cross section is formed so as to follow a direction perpendicular to the capturing surface. | 03-20-2014 |
20140098280 | SOLID-STATE IMAGE-TAKING APPARATUS, MANUFACTURING METHOD THEREOF, AND CAMERA - A solid-state image-taking apparatus which have a solid-state image-taking device includes a chip of the solid-state image-taking device, an imaging lens configured to focus incoming light into an image on the solid-state image-taking device, and a material of a refraction index larger than 1, which is arranged between the chip and the imaging lens. | 04-10-2014 |
20140103477 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device with a pixel region in which a plurality of pixels with photoelectric conversion films are arrayed and pixel isolation portions are interposed between the plurality of pixels. The photoelectric conversion film is a chalcopyrite-structure compound semiconductor composed of a copper-aluminum-gallium-indium-sulfur-selenium based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium based mixed crystal, and is disposed on a silicon substrate in such a way as to lattice-match the silicon substrate concerned. The pixel isolation portion is a compound semiconductor subjected to doping concentration control or composition control so as to become a potential barrier between the photoelectric conversion films. | 04-17-2014 |
20140291791 | SOLID STATE IMAGING APPARATUS AND ELECTRONIC DEVICE - Provided is a solid state imaging apparatus including a transparent substrate formed of a birefringent material having a high refractive index in a direction vertical to a light receiving surface and a low refractive index in a direction parallel to the light receiving surface, the transparent substrate being disposed on the light receiving surface, and an electronic device including the solid state imaging apparatus. | 10-02-2014 |
20140306182 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode. | 10-16-2014 |
20140347538 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPLIANCE - The present disclosure relates to a solid-state imaging device, a driving method for the same, and an electronic appliance, and an object is to provide a solid-state imaging device that can achieve the pixel miniaturization and the global shutter function with higher sensitivity and saturated charge amount. Another object is to provide an electronic appliance including the solid-state imaging device. In a solid-state imaging device | 11-27-2014 |
20150048378 | IMAGE PICKUP ELEMENT AND IMAGE PICKUP DEVICE - Provided is an image pickup element that includes a photoelectric conversion section provided on a semiconductor substrate and including a chalcopyrite-based compound. The photoelectric conversion section has a band gap that is relatively wide on a light incident surface side. | 02-19-2015 |
20150069564 | IMAGING DEVICE, APPARATUS AND METHOD FOR PRODUCING THE SAME AND ELECTRONIC APPARATUS - Solid-state imaging devices, methods to produce the solid-state imaging devices, and electronic apparatuses including the solid-state imaging devices, where the solid-state imaging devices include a semiconductor substrate including a light receiving surface; a plurality of photoelectric conversion parts provided within the semiconductor substrate; and a plurality of reflection portions provided in the semiconductor substrate on a side of the photoelectric conversion parts that is opposite from the light receiving surface; where each of the reflection portions includes a reflection plate and a plurality of metal wirings, and where the plurality of metal wirings are disposed in a same layer of the semiconductor substrate as the reflection plate. | 03-12-2015 |