Patent application number | Description | Published |
20140235068 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate having a silicon-containing film formed thereon into a process chamber; (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure; and (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film. | 08-21-2014 |
20140242790 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A metal-containing film capable of adjusting a work function is formed. A first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and an amino group are alternately supplied onto a substrate having a high-k dielectric film to form a composite metal nitride film on the high-k dielectric film. | 08-28-2014 |
20150093911 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b). | 04-02-2015 |
20150132972 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus includes: a reaction tube configured to accommodate a plurality of substrates and to be supplied with a gas generated by vaporizing or turning into mist a solution containing a reactant in a solvent; a lid configured to close the reaction tube; a first heater configured to heat the plurality of substrates; a thermal conductor placed on the lid on an upper surface thereof; a second heater placed outside the reaction tube around a side thereof, the second heater being configured to heat the gas flowing near the lid; and a heating element placed on the lid on a lower surface thereof, the heating element configured to heat the lid. | 05-14-2015 |
20150140835 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit. | 05-21-2015 |
20150187567 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus processes a substrate by supplying a gas into a processing space. The apparatus includes a buffer space wherein the gas is dispersed, the buffer space disposed at an upstream side of the processing space; a transfer space where the substrate passes when transferred to the processing space; a first, a second and a third exhaust pipe connected to the transfer space, the buffer space and the processing space, respectively; a fourth exhaust pipe connected to downstream sides of the first exhaust pipe, the second exhaust pipe and the third exhaust pipe; a first vacuum pump disposed at the first exhaust pipe; a second vacuum pump disposed at the fourth exhaust pipe; a first valve disposed at the first exhaust pipe at a downstream side of the first vacuum pump; and a second and a third valve disposed at the second and the third exhaust pipe, respectively. | 07-02-2015 |
20150214044 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit. | 07-30-2015 |
20150221503 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit. | 08-06-2015 |
20150228474 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device is disclosed. The method includes forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber; exhausting the precursor gas in the process chamber through an exhaust system; confining a reaction gas, which differs in chemical structure from the precursor gas, in the process chamber by supplying the reaction gas to the substrate in the process chamber while the exhaust system is closed; and exhausting the reaction gas in the process chamber through the exhaust system while the exhaust system is opened. | 08-13-2015 |
20150243507 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device in accordance with the present invention provides a metal-containing film capable of adjusting a work function. The including: (a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and (b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film. | 08-27-2015 |
20150279682 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A halogen element-containing metal material and a nitrogen-containing material are alternately supplied to a process chamber with a flow rate of an inert gas supplied to the process chamber together with the nitrogen-containing material during the supplying of the nitrogen-containing material to the process chamber being more increased than a flow rate of the inert gas supplied to the process chamber together with the metal material during the supplying of the metal material to the process chamber. | 10-01-2015 |
20150325447 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers). | 11-12-2015 |
20150340226 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device by processing a substrate by supplying a processing space with a gas dispersed in a buffer space disposed at an upstream side of the processing space is provided. The method includes (a) transferring the substrate into the processing space while exhausting a transfer space of the substrate by a first vacuum pump; (b) closing a first valve disposed at a downstream side of the first vacuum pump; (c) supplying the gas into the processing space via the buffer space; and (d) exhausting the buffer space through an exhaust pipe connected to a downstream side of the first valve. | 11-26-2015 |
20160024650 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes: a reaction zone configured to accommodate a substrate; a substrate supporting member having a projecting part extending outward; a partition plate configured to partition off the reaction zone and a transferring zone, coming in contact with the projecting part of the substrate supporting member when the substrate is processed; a process gas supplying system configured to supply a process gas to the reaction zone; and a partitioning purge gas supplying system configured to supply a purge gas to a gap formed between the projecting part and the partition plate when supplying the process gas to the substrate. | 01-28-2016 |
20160042940 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b). | 02-11-2016 |
20160056044 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: (a) supplying a halogen-based source gas containing a first element to a substrate; (b) supplying a reaction gas containing a second element to react with the first element to the substrate; (c) forming a first layer containing the first element and the second element by time-dividing and performing (a) and (b) a predetermined number of times; (d) supplying an organic source gas containing the first element to the substrate; (e) supplying the reaction gas to the substrate; (f) forming a second layer containing the first element and the second element by time-dividing and performing (d) and (e) a predetermined number of times; and (g) forming a thin film containing the first element and the second element on the substrate by time-dividing and performing (c) and (f) a predetermined number of times. | 02-25-2016 |
20160090651 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a processing chamber configured to accommodate a substrate therein; a first processing gas supply part configured to supply a first processing gas to the substrate, the first processing gas supply part including a vaporizer configured to vaporize a first processing gas precursor into the first processing gas; a second processing gas supply part configured to supply a second processing gas to the substrate; a vaporizer remaining amount measuring part configured to measure a remaining amount of the first processing gas precursor within the vaporizer; and a control part configured to adjust a number of cycles for supplying the first processing gas and the second processing gas based on the remaining amount of the first processing gas precursor. | 03-31-2016 |
Patent application number | Description | Published |
20130012035 | Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - A substrate processing apparatus capable of increasing the life span of a lamp for heating a substrate is provided. The substrate processing apparatus includes: a light receiving chamber for processing a substrate; a substrate support unit inside the light receiving chamber; a lamp including an electrical wire, and a seal accommodating the electrical wire to hermetically seal the lamp with a gas therein, the lamp irradiating the substrate with a light; a lamp receiving unit outside the light receiving chamber to accommodate the lamp therein, the lamp receiving unit including a lamp connector connected to the lamp to supply an electric current through the electrical wire, a heat absorption member including a material having a thermal conductivity higher than that of the seal, and a base member fixing the heat absorption member; and an external electrical wire connected to the lamp connector to supply current to the lamp connector. | 01-10-2013 |
20140256160 | Apparatus for Manufacturing Semiconductor Device, Method of Manufacturing Semiconductor Device, and Recording Medium - An apparatus for manufacturing semiconductor devices is provided with a processing liquid supply part for supplying processing liquid into a processing chamber which houses a substrate, a heater part for heating the processing liquid in the processing chamber, and a substrate support part which is provided in the processing chamber and supports the substrate. | 09-11-2014 |
20140287595 | Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium - A thin film having excellent etching resistance and a low dielectric constant is described. A method of manufacturing a semiconductor device includes forming a thin film on a substrate, removing first impurities containing H | 09-25-2014 |
20140302687 | Substrate Processing Device, Method for Manufacturing Semiconductor Device, and Vaporizer - A substrate processing apparatus includes: a reaction chamber configured to process a substrate; a vaporizer including a vaporization container into which a processing liquid including hydrogen peroxide or hydrogen peroxide and water is supplied, a processing liquid supply unit configured to supply the processing liquid to the vaporization container, and a heating unit configured to heat the vaporization container; a gas supply unit configured to supply a processing gas generated by the vaporizer into the reaction chamber; an exhaust unit configured to exhaust an atmosphere in the reaction chamber; and a control unit configured to control the heating unit and the processing liquid supply unit such that the processing liquid supply unit supplies the processing liquid to the vaporization container while the heating unit heats the vaporization container. | 10-09-2014 |
Patent application number | Description | Published |
20120185856 | COMPUTER SYSTEM AND MIGRATION METHOD OF VIRTUAL MACHINE - A computer system of the present invention is provided with an open flow controller | 07-19-2012 |
20120195187 | COMPUTER SYSTEM AND MAINTENANCE METHOD OF COMPUTER SYSTEM - A computer system of the present invention is provided with a switch for transferring a received packet data to a destination according to a flow set to itself, an integrated management apparatus which specifies a maintenance object unit and a controller. The controller separates the maintenance object unit from the computer system by controlling the setting or deletion of the flow to the switch. Thus, the maintenance processing of the computer system can be performed without stopping the function by controlling the side of the network and the side of the computer integratedly. | 08-02-2012 |
20130297790 | NETWORK SYSTEM, CONTROL UNIT AND OPTIMAL ROUTE CONTROLLING METHOD - In a central control-type network system, a flexible network control is carried out to improve operability and performance of the network. Specifically, in a network system which carries out a central control to a communication route, an optimal route is selected in consideration of a load situation of network equipments, a load situation of server equipments, and a load situation of applications. A control unit, which carries out the central control to all the equipments of a system such as a network and a server, calculates an optimal route and sets a communication route to the network equipments. Also, the optimal route is determined in consideration of a congestion situation of the network equipments and the load situation of the server equipments and the applications. Moreover, the optimal route is determined in consideration of a phenomenon which could occur in the future from a past congestion situation and a past load situation in addition to a current situation. | 11-07-2013 |
20150304213 | COMPUTER SYSTEM AND MAINTENANCE METHOD OF COMPUTER SYSTEM - A communication system includes a control device configured to calculate a packet forwarding path and set a flow based on the packet forwarding path in a node, and a plurality of nodes configured to forward a received packet based on a flow set by the control device. The control device, when receiving a detour instruction, calculates a new packet forwarding path which detours a detour target node and sets a flow based on the new packet forwarding path in the plurality of nodes on the new packet forwarding path. | 10-22-2015 |