Patent application number | Description | Published |
20090159854 | SUPPRESSION OF NON-RADIATIVE RECOMBINATION IN MATERIALS WITH DEEP CENTRES - Procedure to obtain semiconductor materials with electronic levels close to the mid-bandgap (deep levels) which do not suffer from the non-radiative recombination by multiple phonon emission (MPE) associated to the existence of that kind of levels. The procedure consist in doping by any means the semiconductor with a density sufficiently high of the impurities producing the deep level, so that a Mott transition of the electron wavefunctions representing the localized states in the impurities is induced, in such a way that these wavefunctions become distributed across the whole semiconductor and are shared by all the impurities. When this happens, local charge density variations, and thus non-radiative recombination by MPE, disappear. Based on the resulting materials (semiconductors with three separate energy bands and radiative behavior ( | 06-25-2009 |
20090217877 | Epitaxial reactor for mass production of wafers - A high throughput reactor for the mass production of wafers through chemical vapor deposition, mainly to form silicon epitaxies for the photovoltaic industry, is described. main innovation is a high susceptor stacking density: several graphite susceptors are placed vertically and parallel to one another, electrically interconnected, and are heated by Joule effect. Electrical current gets to the susceptors from the current source through specially designed feedthroughs, which connect the cold room outside the deposition chamber with the hot susceptors. Gas flows vertically between susceptors. The substrates on which deposition occurs are placed on the susceptors. Below the susceptors a pre-chamber is found, in which entering gas calms down and distributes homogeneously. Susceptors and pre-chamber are placed inside a stainless steel chamber, which is internally covered by a reflecting material, and externally kept cold by water. Both susceptors and pre-chamber are fixed to a connection panel, which also contains electrical feedthroughs, thermocouple feedthroughs, and gas inlet and outlet. Outlet gases are partially recycled, with the corresponding gas savings and increased deposition efficiency. | 09-03-2009 |
20100294334 | QUANTUM DOT INTERMEDIATE BAND SOLAR CELL WITH OPTIMAL LIGHT COUPLING BY DIFRACTION - It consists of a quantum dot intermediate band solar cell with light coupling by diffraction. In the structure of the cell, the rear metalic contact ( | 11-25-2010 |
20110100797 | PROCEDURE FOR OBTAINING FILMS OF INTERMEDIATE BAND SEMICONDUCTOR MATERIALS - This invention describe a process for obtaining thin films of intermediate band semiconductor materials consisting of obtaining a target of compressed particles of the said material for its use in sputtering equipment. The target is obtained by means of the thermal process of a mixture of semiconductor material components, following a specific profile of temperatures and times, in order to obtain a material in a polycrystalline form of the same composition as the intermediate band semiconductor material. The polycrystalline material is disintegrated again by means of mechanical processes in the form of a powder and is then compacted, through the application of a suitable pressure in order to form a target. | 05-05-2011 |
20110143475 | METHOD FOR MANUFACTURING OF OPTOELECTRONIC DEVICES BASED ON THIN-FILM, INTERMEDIATE-BAND MATERIALS DESCRIPTION - Method for manufacturing of optoelectronic devices based on thin-film, intermediate band materials, characterized in that it comprises, at least, the following steps: | 06-16-2011 |
20130092221 | INTERMEDIATE BAND SOLAR CELL HAVING SOLUTION-PROCESSED COLLOIDAL QUANTUM DOTS AND METAL NANOPARTICLES - The present invention relates to a solar cell and to a method of manufacturing thereof, the solar cell comprising: a layer of an n-doped semiconductor, a layer of a p-doped semiconductor and an intermediate band layer being disposed between the n-doped and the p-doped semiconductor layers, the intermediate band layer comprising: an amorphous semiconducting host material, a plurality of colloidal quantum dots embedded in the host material and substantially uniformly distributed therein, each quantum dot comprising a core surrounded by a shell, the shell comprising a material having a higher bandgap than that of the host material, and a plurality of metal nanoparticles embedded in the host material and located at least in a plane where a plurality of quantum dots are distributed. | 04-18-2013 |
20140326299 | SOLAR CELL WITH AN INTERMEDIATE BAND COMPRISING NON-STRESSED QUANTUM DOTS - An intermediate band solar cell is provided. The intermediate band material of the intermediate band solar cell consists of a collection of quantum dots of a semiconductor material that are immersed in a volume of a second semiconductor material. The first semiconductor material has a rock salt-type crystalline structure, and the second semiconductor material has a zinc blende structure. The quantum dots are produced by the immiscibility of the first semiconductor material in the second semiconductor material. A combination of the first and second semiconductor materials with a very similar lattice constant can therefore be selected such that the layer of intermediate band material does not have mechanical stress accumulation. | 11-06-2014 |
Patent application number | Description | Published |
20090159854 | SUPPRESSION OF NON-RADIATIVE RECOMBINATION IN MATERIALS WITH DEEP CENTRES - Procedure to obtain semiconductor materials with electronic levels close to the mid-bandgap (deep levels) which do not suffer from the non-radiative recombination by multiple phonon emission (MPE) associated to the existence of that kind of levels. The procedure consist in doping by any means the semiconductor with a density sufficiently high of the impurities producing the deep level, so that a Mott transition of the electron wavefunctions representing the localized states in the impurities is induced, in such a way that these wavefunctions become distributed across the whole semiconductor and are shared by all the impurities. When this happens, local charge density variations, and thus non-radiative recombination by MPE, disappear. Based on the resulting materials (semiconductors with three separate energy bands and radiative behavior ( | 06-25-2009 |
20100294334 | QUANTUM DOT INTERMEDIATE BAND SOLAR CELL WITH OPTIMAL LIGHT COUPLING BY DIFRACTION - It consists of a quantum dot intermediate band solar cell with light coupling by diffraction. In the structure of the cell, the rear metalic contact ( | 11-25-2010 |
20110100797 | PROCEDURE FOR OBTAINING FILMS OF INTERMEDIATE BAND SEMICONDUCTOR MATERIALS - This invention describe a process for obtaining thin films of intermediate band semiconductor materials consisting of obtaining a target of compressed particles of the said material for its use in sputtering equipment. The target is obtained by means of the thermal process of a mixture of semiconductor material components, following a specific profile of temperatures and times, in order to obtain a material in a polycrystalline form of the same composition as the intermediate band semiconductor material. The polycrystalline material is disintegrated again by means of mechanical processes in the form of a powder and is then compacted, through the application of a suitable pressure in order to form a target. | 05-05-2011 |