Patent application number | Description | Published |
20120157367 | COMPOSITION AND METHOD FOR REMOVING PHOTORESIST AND BOTTOM ANTI-REFLECTIVE COATING FOR A SEMICONDUCTOR SUBSTRATE - A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent. | 06-21-2012 |
20120273010 | Composition and Method to Remove Excess Material During Manufacturing of Semiconductor Devices - A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide. | 11-01-2012 |
20130115741 | PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING AQUA REGIA WITH MICROWAVE ASSISTED HEATING - The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process, comprising using an aqua regia cleaning solution (comprising a mixture of nitric acid and hydrochloric acid) with microwave assisted heating. Low boiling temperature of hydrochloric acid prevents heating the aqua regia solution to a high temperature, impeding the effectiveness of post silicidation nickel and platinum residue removal. Therefore, embodiments of the invention provide a microwave assisted heating of the substrate in an aqua regia solution, selectively heating platinum residues without significantly increasing the temperature of the aqua regia solution, rendering platinum residues to be more soluble in aqueous solution and thereby dissolving it from the surface of the substrate. | 05-09-2013 |
20130122670 | PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING CHLORINE GAS - The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate. | 05-16-2013 |
20130122671 | PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS - The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues. | 05-16-2013 |
20130125923 | METHOD FOR CLEANING PLATINUM RESIDUES ON A SEMICONDUCTOR SUBSTRATE - A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid. | 05-23-2013 |
20130130414 | HIGH PRODUCTIVITY COMBINATORIAL WORKFLOW FOR PHOTORESIST STRIP APPLICATIONS - Electrical testing of metal oxide semiconductor (MOS) high-k capacitor structures is used to evaluate photoresist strip or cleaning chemicals using a combinatorial workflow. The electrical testing can be able to identify the damages on the high-k dielectrics, permitting a selection of photoresist strip chemicals to optimize the process conditions in the fabrication of semiconductor devices. The high productivity combinatorial technique can provide a compatibility evaluation of photoresist strip chemicals with high-k devices. | 05-23-2013 |
20130167867 | Composition And Method For Removing Photoresist And Bottom Anti-Reflective Coating For A Semiconductor Substrate - A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent. | 07-04-2013 |
20130217238 | Substrate Processing Including A Masking Layer - Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer. | 08-22-2013 |
20130244186 | Composition And Method For Removing Photoresist And Bottom Anti-Reflective Coating For A Semiconductor Substrate - A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent. | 09-19-2013 |
20130267091 | Process to remove Ni and Pt residues for NiPtSi application using Chlorine gas - The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate. | 10-10-2013 |
20130323890 | Aqua Regia and Hydrogen Peroxide HCl Combination to Remove Ni and NiPt Residues - A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate. | 12-05-2013 |
20130338305 | Methods for Coating a Substrate with an Amphiphilic Compound - Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process. | 12-19-2013 |
20140187041 | High Dose Ion-Implanted Photoresist Removal Using Organic Solvent and Transition Metal Mixtures - Provided are methods for processing semiconductor substrates to remove high-dose ion implanted (HDI) photoresist structures without damaging other structures made of titanium nitride, tantalum nitride, hafnium oxide, and/or hafnium silicon oxide. The removal is performed using a mixture of an organic solvent, an oxidant, a metal-based catalyst, and one of a base or an acid. Some examples of suitable organic solvents include dimethyl sulfoxide, n-ethyl pyrrolidone, monomethyl ether, and ethyl lactate. Transition metals in their zero-oxidation state, such as metallic iron or metallic chromium, may be used as catalysts in this mixture. In some embodiments, a mixture includes ethyl lactate, of tetra-methyl ammonium hydroxide, and less than 1% by weight of the metal-based catalyst. The etching rate of the HDI photoresist may be at least about 100 Angstroms per minute, while other structures may remain substantially intact. | 07-03-2014 |
20140248770 | MICROWAVE-ASSISTED HEATING OF STRONG ACID SOLUTION TO REMOVE NICKEL PLATINUM/PLATINUM RESIDUES - A method is provided for removing residual Ni/Pt and/or Pt from a semiconductor substrate in a post salicidation cleaning process using microwave heating of a stripping solution. Embodiments include depositing a Ni/Pt layer on a semiconductor substrate; annealing the deposited Ni/Pt layer, forming a nickel/platinum silicide and residual Ni/Pt and/or Pt; removing the residual Ni/Pt and/or Pt from the semiconductor substrate by: microwave heating a strong acid solution in a non-reactive container; exposing the residual Ni/Pt and/or Pt to the microwave heated strong acid solution; and rinsing the semiconductor substrate with water H | 09-04-2014 |
20140302671 | Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition - Wet-etch solutions for conductive metals (e.g., copper) and metal nitrides (e.g., tantalum nitride) can be tuned to differentially etch the conductive metals and metal nitrides while having very little effect on nearby oxides (e.g., silicon dioxide hard mask materials), and etching refractory metals (e.g. tantalum) at an intermediate rate. The solutions are aqueous base solutions (e.g., ammonia-peroxide mixture or TMAH-peroxide mixture) with just enough hydrofluoric acid (HF) added to make the solution's pH about 8-10. Applications include metallization of sub-micron logic structures. | 10-09-2014 |
20140363944 | Aqua Regia and Hydrogen Peroxide HCl Combination to Remove Ni and NiPt Residues - A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate. | 12-11-2014 |
20150017456 | Reducing voids caused by trapped acid on a dielectric surface - When an etchant for metal (e.g., HF) reaches an underlying silicon oxide layer, it may form silanol bonds or other hydrogen bonds that resist rinsing, so that some etchant remains to be trapped under the next deposited layer. Trapped etchant can create voids that eventually degrade the performance of the oxide layer. Exposing the surface to a liquid solution or gaseous precursor containing silane seals the defects without causing an overall thickness change. The silane reacts at sites with silanol (or other hydrogen) bonds, breaking the bonds and replacing the hydrogen with silicon, but does not react in the absence of a hydrogen bond. | 01-15-2015 |