Patent application number | Description | Published |
20100176837 | ULTRA-THIN ORGANIC TFT CHEMICAL SENSOR, MAKING THEREOF, AND SENSING METHOD - An embodiment of the invention is an organic thin film transistor chemical sensor. The sensor includes a substrate. A gate electrode is isolated from drain and source electrodes by gate dielectric. An organic ultra-thin semiconductor thin film is arranged with respect to the gate, source and drain electrodes to act as a conduction channel in response to appropriate gate, source and drain potentials. The organic ultra-thin film is permeable to a chemical analyte of interest and consists of one or a few atomic or molecular monolayers of material. An example sensor array system includes a plurality of sensors of the invention. In a preferred embodiment, a sensor chip having a plurality of sensors is mounted in a socket, for example by wire bonding. The socket provides thermal and electrical interference isolation for the sensor chip from associated sensing circuitry that is mounted on a common substrate, such as a PCB (printed circuit board). A method of operating an organic thin film transistor chemical sensor exposes the sensor to a suspected analyte. A low duty cycle voltage pulse train is applied to the gate electrode to reduce baseline drift while sensing for a conduction channel change. | 07-15-2010 |
20100297776 | PEROXIDE CHEMICAL SENSOR AND SENSING METHOD - Sensors, sensing systems and sensing methods of the invention provide for detection of peroxides, including for example, vapor-phase H | 11-25-2010 |
20110124020 | Methods for Detecting Antibodies - Methods for detection of any antibody utilizing a standardized approach applicable to any antibody which provides highly specific assays specific for individual or multiple antibodies. The methods enable improved pharmacokinetic analysis during development and clinical use of antibody-based therapies as well as determination of diagnostic and/or prognostic factors. | 05-26-2011 |
20140109930 | METHOD FOR IN-SITU DRY CLEANING, PASSIVATION AND FUNCTIONALIZATION OF SI-GE SEMICONDUCTOR SURFACES - A method for in-situ dry cleaning of a SiGe semiconductor surface doses the SiGe surface with ex-situ wet HF in a clean ambient environment or in-situ dosing with gaseous NH | 04-24-2014 |
20140113459 | METHOD FOR IN-SITU DRY CLEANING, PASSIVATION AND FUNCTIONALIZATION OF GE SEMICONDUCTOR SURFACES - A method for in-situ dry cleaning of a Ge containing semiconductor surface, other than SiGe. The method is conducted in a vacuum chamber. An oxygen monolayer(s) is formed and promotes removal of essentially all carbon from the surface, and serves to both clean and functionalize the surface. The Ge semiconductor surface is then annealed at a temperature below that which would induce dopant diffusion. | 04-24-2014 |
20150162182 | SELF-LIMITING CHEMICAL VAPOR DEPOSITION AND ATOMIC LAYER DEPOSITION METHODS - Methods for depositing silicon on a semiconductor or metallic surface include cycling dosing of silane and chlorosilane precursors at a temperature between 50° C. and 300° C., and continuing cycling between three and twenty three cycles until the deposition self-limits via termination of surface sites with Si—H groups. Methods of layer formation include depositing a chlorosilane onto a substrate to form a first layer, wherein the substrate is selected from the group consisting of In | 06-11-2015 |
20150221499 | METHOD FOR PASSIVATING SURFACES, FUNCTIONALIZING INERT SURFACES, LAYERS AND DEVICES INCLUDING SAME - The invention provides a method for passivation of various surfaces (metal, polymer, semiconductors) from external contaminants, and the functionalization of inert surfaces. The method of the invention can functionalize 2D semiconductor and other insert surfaces such as non-reactive metals, oxides, insulators, glasses, and polymers. The method includes formation of a monolayer, an ordered bilayer or an ordered multilayer of metal phthalocyanines (MPc). The invention also provides layer structure in a semiconductor device, the layer structure comprising one of an ordered monolayer, ordered bilayer or ordered multi-layer of metal phthalocyanine upon a surface, and one of an ALD deposited layer or 2D semiconductor on the one of a monolayer, ordered bilayer or ordered multi-layer of metal phthalocyanine. | 08-06-2015 |
20150273061 | DEGRADABLE SILICA NANOSHELLS FOR ULTRASONIC IMAGING/THERAPY - Disclosed are methods using degradable silica nanoshells for local intra-operative ultrasound marking; tumor detection via systemic injection; and nanoshell enhanced ultrasonic ablation of tumors. | 10-01-2015 |