Patent application number | Description | Published |
20140007808 | Susceptor Device And Deposition Apparatus Having The Same - A susceptor device includes: a placement section on which a substrate is placed; a lift pin which is provided in the placement section and protrudes further to the upper side than the placement section at the time of carrying-in or carrying-out of the substrate, thereby supporting the substrate placed on the placement section; and lift pin moving means for moving the lift pin up and down. At the time of carrying-in or carrying-out of the substrate, the substrate is moved up and down by moving the lift pin up and down by the lift pin moving means in a state where the substrate is supported by the lift pin, and the susceptor device further includes a control section which controls the lift pin moving means so as to reduce a movement speed immediately before the substrate and the lift pin come into contact with each other, in a case of moving the lift pin. | 01-09-2014 |
20140116340 | EPITAXIAL GROWTH DEVICE - An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole. | 05-01-2014 |
20140220712 | Imaging Device, Semiconductor Manufacturing Apparatus, and Semiconductor Manufacturing Method - There are provided a susceptor having a recessed wafer mounting section, in which a semiconductor wafer is mounted and which is configured to include a circular bottom portion and a side wall portion, on an upper surface, a reaction chamber in which the susceptor is provided, an imaging unit that is provided above the reaction chamber and images the semiconductor wafer and the wafer mounting section, and an image analysis unit that analyzes the deviation of the semiconductor wafer from the wafer mounting section on the basis of an image captured by the imaging unit. | 08-07-2014 |
20140261159 | Film Forming Method Using Epitaxial Growth and Epitaxial Growth Apparatus - When a reaction chamber defined and formed by a ceiling plate as a top face, a substrate mounting portion as a bottom face, and a side wall as a lateral face is constructed, the ceiling plate is supported by a support at the circumferential edge of the ceiling plate from the upper side and the outer side of the circumferential edge, and the reactant gas is rectified in a reactant gas supply path disposed in the side wall so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path facing the reaction chamber to the center of the reaction chamber. | 09-18-2014 |
20140290573 | Susceptor Support Portion and Epitaxial Growth Apparatus Including Susceptor Support Portion - A susceptor support portion of the present invention includes a susceptor shaft and a substrate lift portion. The susceptor shaft includes a support column and a plurality of arms that extend radially from the support column, the substrate lift portion includes a support column and a plurality of arms that extend radially from the support column, the arm of the susceptor shaft includes a first arm, a second arm coupled to the first arm, and a third arm coupled to the second arm, from the support column side of the susceptor shaft, the second arm being provided with a through hole which passes through the second arm in a vertical direction, and a width of the first arm of the susceptor shaft is smaller than a width of the second arm of the susceptor shaft. | 10-02-2014 |
20150122181 | SUSCEPTOR SUPPORT PORTION AND EPITAXIAL GROWTH APPARATUS INCLUDING SUSCEPTOR SUPPORT PORTION - A susceptor support portion of the present invention includes a susceptor shaft and a substrate lift portion. The susceptor shaft includes a support column and a plurality of arms that extend radially from the support column, the substrate lift portion includes a support column and a plurality of arms that extend radially from the support column, the arm of the susceptor shaft includes a first arm, a second arm coupled to the first arm, and a third arm coupled to the second arm, from the support column side of the susceptor shaft, the second arm being provided with a through hole which passes through the second arm in a vertical direction, and a width of the first arm of the susceptor shaft is smaller than a width of the second arm of the susceptor shaft. | 05-07-2015 |
20150252492 | LOWER SIDE WALL FOR EPITAXIAL GROWTH APPARATUS - Embodiments described herein relate to a lower side wall for use in a processing chamber. In one embodiment, the lower side wall includes an annular body. The annular body as an inner circumference, an outer circumference, a plurality of flanges projecting from the inner circumference, and a first concave portion formed in the outer circumference. The outer circumference has a plurality of grooves arranged in a circumferential direction of the lower side wall. In another embodiment, the annular body further includes a top surface having a mounting surface formed thereon and a second concave portion formed opposite the first concave portion. The second concave portion has a plurality of purge holes. In another embodiment, each groove of the plurality of grooves formed in the first concave portion has an arc shape. | 09-10-2015 |
20150252493 | CEILING PORTION FOR EPITAXIAL GROWTH APPARATUS - A ceiling portion for use in a processing apparatus and an epitaxial growth apparatus having the ceiling portion are disclosed herein. In one embodiment the ceiling portion includes a ring shaped support and a ceiling plate. The ring shaped support includes an inner surface having a first slope portion decreasing from a top surface of the ring shaped support towards a center of the ring shaped support and a protrusion, protruding from the inner surface, having a second slope portion decreasing in a protruding direction towards the center of the ring shaped support. The ceiling plate is coupled to the support. In another embodiment, the first slope portion and the second slope portion meet at a point, wherein an angle formed by the first slope portion and the second slope portion is less than 90 degrees. | 09-10-2015 |