43rd week of 2015 patent applcation highlights part 63 |
Patent application number | Title | Published |
20150302909 | SEMICONDUCTOR MEMORY APPARATUS AND OPERATING METHOD OF THE SAME - A semiconductor memory apparatus includes a delay control portion configured to generate a plurality of control signals by performing subtraction operation on a CL information and an AL information; and a delay portion configured to decide a delay amount, delay an input signal by the delay amount, and output the delayed input signal as a delay signal in response to the plurality of control signals. | 2015-10-22 |
20150302910 | MAGNETIC MEMORY - A magnetic memory according to an embodiment includes: a magnetic layer including a plurality of magnetic domains and a plurality of domain walls, and extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit flowing a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit writing information into the magnetic layer; a read unit reading information from the magnetic layer; and a voltage generating unit generating a voltage to be applied between the pinning layer and the electrode layer. | 2015-10-22 |
20150302911 | MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL WITH LOW POWER CONSUMPTION - A magnetic random access memory (MRAM) cell including a magnetic tunnel junction containing: a storage layer including at least one storage ferromagnetic layer, each storage ferromagnetic layer having a storage magnetization; an antiferromagnetic storage layer pinning the storage magnetization at a low threshold temperature and freeing them at a high temperature threshold; a reference layer; and a tunnel barrier layer between the reference layer and the storage layer. The magnetic tunnel junction also includes a free ferromagnetic layer having a free magnetization adapted to induce a magnetic stray field magnetically coupling the free ferromagnetic layer with the storage layer; such that the storage magnetization can be switched by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold. The disclosed MRAM cell has low power consumption. | 2015-10-22 |
20150302912 | METHOD AND APPARATUS FOR GENERATING A REFERENCE FOR USE WITH A MAGNETIC TUNNEL JUNCTION - Methods and apparatus for generating a reference for use with a magnetic tunnel junction are provided. In an example, provided is a magnetoresistive read only memory including a magnetic tunnel junction (MTJ) storage element, a sense amplifier having a first input coupled to the MTJ storage element, and a reference resistance device coupled to a second input of the sense amplifier. The reference resistance device includes a plurality of groups of at least two reference MTJ devices. Each reference MTJ device in a respective group is coupled in parallel with each other reference MTJ device in the respective group. Each group is coupled in series with the other groups. This arrangement advantageously mitigates read disturbances and reference level variations, while saving power, reducing reference resistance device area, and increasing read speed. | 2015-10-22 |
20150302913 | VOLATILE MEMORY DEVICE, MEMORY MODULE INCLUDING THE SAME, AND METHOD OF OPERATING MEMORY MODULE - A memory module includes an emergency power; a volatile memory device including a plurality of memory blocks; a nonvolatile memory device; and a module control block suitable for controlling data of the volatile memory device to be backed up to the nonvolatile memory device by using the emergency power when a power failure occurs, wherein data of the memory blocks are sequentially backed up to the nonvolatile memory device, and a refresh operation prohibited for a memory block of which back up is completed. | 2015-10-22 |
20150302914 | SEMICONDUCTOR DEVICE - A semiconductor device is equipped with memory cells which are provided at the intersections of word lines and local bit lines, hierarchical switches which are respectively connected between the local bit lines and a global bit line, and a hierarchical sense amplifier which amplifies a potential difference generated between signal nodes, with the signal nodes being respectively connected to the local bit lines. According to the present invention, because the hierarchical sense amplifier is a differential type circuit, a stable sensing operation can be performed. In addition, because one hierarchical sense amplifier can be assigned to multiple local bit lines, the number of hierarchical sense amplifiers can be reduced. | 2015-10-22 |
20150302915 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes: a master chip suitable for generating a plurality of first control signals and a second control signal based on a read command; and a plurality of slave chips each suitable for latching data read from a plurality of memory cells included in a corresponding slave chip and transmitting the latched data to the master chip based on a correspond control signal of the first control signals, wherein the master chip latches the data transmitted from the slave chips based on the first control signals and outputs the data latched in the master chip based on the second control signal. | 2015-10-22 |
20150302916 | SEMICONDUCTOR STORAGE APPARATUS - A semiconductor memory device, including a plurality of pairs of bit lines; a plurality of memory cells coupled to a plurality of word lines and the plurality of pairs of bit lines; a plurality of sense amplifiers each coupled between a corresponding pair of bit lines; a plurality of first driver transistors coupled between at least one of the sense amplifiers and a first power supply line; a plurality of second driver transistors coupled between at least two of the sense amplifiers and a second power supply line; a pair of common data lines; a plurality of column selection gates each coupled between a corresponding one of pair of bit lines and a corresponding one of pair of common data lines, and a plurality of mask selection gates each coupled between a corresponding one of pair of bit lines and a corresponding one of column selection gates. | 2015-10-22 |
20150302917 | SRAM Cell and Cell Layout Method - Embodiments of the present disclosure include an array of SRAM cells, an SRAM cell, and methods of forming the same. An embodiment is an array of static random access memory (SRAM) cells including a plurality of overlapping rectangular regions. Each of overlapping rectangular regions including an entire first SRAM cell, a portion of a second adjacent SRAM cell in a first corner region of the rectangular region, and a portion of a third adjacent SRAM cell in a second corner region of the rectangular region, the second corner region being opposite the first corner region. Embodiments also include multi-finger cell layouts. | 2015-10-22 |
20150302918 | WORD LINE DECODERS FOR DUAL RAIL STATIC RANDOM ACCESS MEMORIES - Word line decoders for dual rail SRAM devices are disclosed for high performance sub-micron SRAM designs. One embodiment is an SRAM device that includes a memory cell array and a word line traversing the memory cell array for selecting memory cells of the memory cell array. A row decode-driver coupled to the word line toggles the word line between logic levels of a memory cell supply based on select signals that toggle between logic levels of a peripheral supply. The row decoder-driver toggles the word line without utilizing level shifters along the word line access path. | 2015-10-22 |
20150302919 | THREE-DIMENSIONAL (3D) MEMORY CELL SEPARATION AMONG 3D INTEGRATED CIRCUIT (IC) TIERS, AND RELATED 3D INTEGRATED CIRCUITS (3DICs), 3DIC PROCESSOR CORES, AND METHODS - A three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) (3DIC) tiers is disclosed. Related 3DICs, 3DIC processor cores, and methods are also disclosed. In embodiments disclosed herein, memory read access ports of a memory block are separated from a memory cell in different tiers of a 3DIC. 3DICs achieve higher device packing density, lower interconnect delays, and lower costs. In this manner, different supply voltages can be provided for the read access ports and the memory cell to be able to lower supply voltage for the read access ports. Static noise margins and read/write noise margins in the memory cell may be provided as a result. Providing multiple power supply rails inside a non-separated memory block that increases area can also be avoided. | 2015-10-22 |
20150302920 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a memory cell array, a data storage circuit and a control circuit. The data storage circuit holds first data to be written into the memory cell and holds 1 bit data calculated from the first data. The control circuit writes the data of n bits into the memory cell in a first write operation and then executes a second write operation. The control circuit carries out the following control in the second write operation. It reads data stored in the memory cell in the first write operation. It restores the first data based on the data read from the memory cell and the 1 bit data held in the data storage circuit. It writes the restored first data into the memory cell. | 2015-10-22 |
20150302921 | DEVICE AND METHOD FOR DETERMINING A CELL LEVEL OF A RESISTIVE MEMORY CELL - A device for determining an actual level of a resistive memory cell having a plurality of programmable levels is suggested. The device comprises an estimator unit and a detection unit. The estimator unit is adapted to receive a time input signal and a temperature input signal and to estimate changes of a read-out signal of the levels of the resistive memory cell based on a time and temperature dependent model of the resistance changes, the received time input signal and the received temperature input signal. The detection unit is adapted to receive an actual read-out signal from the resistive memory cell and the estimated changes from the estimator unit. Further, the detection unit is adapted to determine the actual level of the resistive memory cell based on the received read-out signal and the received estimated changes. | 2015-10-22 |
20150302922 | REFERENCE AND SENSING WITH BIT LINE STEPPING METHOD OF MEMORY - A sensing method for a memory is provided. The memory includes: a memory cell; a reference circuit generating a reference voltage and a clamp voltage; and a current supplying circuit receiving the clamp voltage to develop a cell current passing through the memory cell to form a cell voltage, wherein the cell voltage is used for incorporating with the reference voltage to determine the information stored in the memory. | 2015-10-22 |
20150302923 | GLOBAL BIT LINE PRE-CHARGE CIRCUIT THAT COMPENSATES FOR PROCESS, OPERATING VOLTAGE, AND TEMPERATURE VARIATIONS - A memory array includes wordlines, local bitlines, two-terminal memory elements, global bitlines, and local-to-global bitline pass gates and gain stages. The memory elements are formed between the wordlines and local bitlines. Each local bitline is selectively coupled to an associated global bitline, by way of an associated local-to-global bitline pass gate. During a read operation when a memory element of a local bitline is selected to be read, a local-to-global gain stage is configured to amplify a signal on or passing through the local bitline to an amplified signal on or along an associated global bitline. The amplified signal, which in one embodiment is dependent on the resistive state of the selected memory element, is used to rapidly determine the memory state stored by the selected memory element. The global bit line and/or the selected local bit line can be biased to compensate for the Process Voltage Temperature (PVT) variation. | 2015-10-22 |
20150302924 | REFRESH ARCHITECTURE AND ALGORITHM FOR NON-VOLATILE MEMORIES - Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level. | 2015-10-22 |
20150302925 | ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR MEMORY AND OPERATION METHOD THEREOF - Disclosed is an electronic device including a semiconductor memory. The semiconductor memory includes a bit line, a source line, a plurality of resistive memory cells among which a selected resistive memory cell forms a current path between the bit line and the source line, a sense amplifier suitable for sensing data of the bit line in an active operation, a latch suitable for latching data sensed by the sense amplifier in the active operation, a write control unit suitable for comparing data latched in the latch with write data in a write operation, and a write driver suitable for driving the bit line and the source line based on a comparison result of the write control unit and the write data in the write operation. | 2015-10-22 |
20150302926 | OPTICAL RECORDING DEVICE, OPTICAL RECORDING METHOD, AND INFORMATION RECORDING MEDIUM - In a recording technique in which a plurality of light spots are simultaneously formed by using an ultra-short pulse laser and a spatial phase modulator, and a plurality of recording dots having refractive indexes different from those of the vicinities thereof are formed inside a recording medium, it is hard to make recording quality and a recording density compatible. Therefore, a plurality of dots are recorded at a predetermined dot pitch, and then other dots are recorded between the recorded dots. | 2015-10-22 |
20150302927 | NONVOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME - Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings. | 2015-10-22 |
20150302928 | MEMORY SYSTEM AND READ RECLAIM METHOD THEREOF - A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area. | 2015-10-22 |
20150302929 | SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a semiconductor storage device of an embodiment of the present disclosure is provided with peripheral circuits, a memory cell array, upper bit lines, and first and second connecting parts. The memory cell array is disposed above the peripheral circuit, and includes at least first and second regions. The upper bit lines extend in a first direction and are above the memory cell array. The first and second connecting parts are respectively provided with contact plugs, and one of these connecting parts is formed between first and second regions. The upper bit lines includes a first group of upper bit lines which are connected to the peripheral circuits via the first connecting part, and a second group of upper bit lines which are connected to the peripheral circuits via the second connecting part. | 2015-10-22 |
20150302930 | FLASH STORAGE DEVICE WITH DATA INTEGRITY PROTECTION - A flash storage device includes a power hold circuit including a double layer capacitor. A power source supplies power to the flash storage device and charges the double layer capacitor. The double layer capacitor supplies power for maintaining integrity of data during a data transfer occurring in the flash storage device when the power supplied by the power source is disrupted. Additionally, the flash storage device can inhibit subsequent data transfers until the power supplied by the power source is restored. | 2015-10-22 |
20150302931 | LEVEL COMPENSATION IN MULTILEVEL MEMORY - Some embodiments include apparatuses and methods having a compensation unit to provide a compensation value based at least in part on a threshold voltage value of a memory cell. At least one of such embodiments includes a controller to select a code during an operation of retrieving information from the memory cell to represent a value of information stored in the memory cell. Such a code can be associated with an address having an address value based at least in part on the compensation value. Additional apparatuses and methods are described. | 2015-10-22 |
20150302932 | MEMORY DEVICE, SEMICONDUCTOR UNIT AND METHOD OF OPERATING THE SAME, AND ELECTRONIC APPARATUS - A semiconductor unit with memory devices, each of the memory devices includes: a first semiconductor layer; second and third semiconductor layers; a first dielectric film and a first conductive film; first, second, and third electrodes electrically connected to the second semiconductor layer, the third semiconductor layer, and the first conductive film, respectively, the third electrode being electrically connected to the first electrode. In the memory devices, when a voltage equal to or higher than a predetermined threshold value is applied between the first and second electrodes, a filament that is a conductive path electrically linking the second and third semiconductor layers is formed in the region between the second and third semiconductor layers, and thereby, writing operation of information is performed. | 2015-10-22 |
20150302933 | SHIFT REGISTER, GATE DRIVING CIRCUIT, ARRAY SUBSTRATE AND DISPLAY DEVICE - Embodiments of the present disclosure disclose a shift register, a gate driving circuit, an array substrate and a display apparatus capable of effectively eliminating a drifting phenomenon of an output signal and increasing an output stability of the shift register. The shift register comprises input terminals of the shift register comprising a start signal input terminal, a first clock signal input terminal and a second clock signal input terminal; a pre-charging circuit which is in response to a start signal and a first clock signal; a first pulling-up circuit which is in response to an enable level of the start signal and an enable level of the first clock signal; a pulling-down circuit which is in response to a disable level of the first clock signal and an enable level of the second clock signal; a second pulling-up circuit; and an output terminal of the shift register. | 2015-10-22 |
20150302934 | SHIFT REGISTER, GATE DRIVING CIRCUIT, AND DISPLAY DEVICE - The present invention provides a shift register, a gate driving circuit and a display device. The shift register comprises a precharge and reset module, a pull-up module, a pull-down module and a cut-off module, the cut-off module, the pull-up module and the pull-down module are connected at a first node, and the cut-off module is connected between the first node and the precharge and reset module. In the present invention, the cut-off module is provided to disconnect electric connection between the precharge and reset module and the pull-up module, such that the first node cannot discharge through the precharge and reset module, which effectively avoids internal discharge of the shift register, and further ensures normal output of the signal output from the output terminal of the shift register, and improves stability of the shift register. | 2015-10-22 |
20150302935 | SHIFT REGISTER UNIT, GATE DRIVING APPARATUS AND DISPLAY DEVICE - Provided is a shift register unit, a gate driving apparatus and a display device capable of increasing a lifespan of a shift register. The shift register unit according to the present disclosure includes: a first thin film field effect transistor, a drain thereof connected with a first signal terminal, a source thereof connected with the outputting node at the present stage, a gate thereof connected with a first node; a second thin film field effect transistor, a drain thereof connected with the first signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the first node; a third thin film field effect transistor, a drain thereof connected with a second signal terminal, a source thereof connected with the outputting node at the present stage, and a gate thereof connected with a second node; a fourth thin film field effect transistor, a drain thereof connected with the second signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the second node; and a node voltage control module, configured to control the first node and the second node to be in a high potential state alternatively when the shift register unit is in a pulling-down phase. The present disclosure increases the lifespan of the shift register. | 2015-10-22 |
20150302936 | SHIFT REGISTER UNIT, GATE DRIVING CIRCUIT, AND DISPLAY DEVICE - The present invention provides a shift register unit, a gate driving circuit and a display device. The shift register unit comprises: an input module for, in response to turn-on level input via the shift register input terminal, providing turn-on level to the first node and providing turn-off level to the second node; a pull-up module for, in response to turn-on level of the first node, providing a clock signal to the shift register output terminal, and also used for, in response to turn-on level output by the shift register output terminal, providing turn-off level to the second node; a reset module for, in response to turn-on level input via the reset signal input terminal, providing the turn-on level to the second node; and a pull-down module for, in response to turn-on level of the second node, providing turn-off level to the shift register output terminal and the first node. | 2015-10-22 |
20150302937 | METHODS AND SYSTEMS FOR MITIGATING MEMORY DRIFT - A memory cell is read by measuring a parameter associated with the memory cell with a first resolution to determine a value stored in the memory cell. The parameter is also measured with a second resolution that is finer than the first resolution. The memory cell is reprogrammed to mitigate an offset between the parameter as measured with the second resolution and the parameter as measured with the first resolution. | 2015-10-22 |
20150302938 | DETECTING WRITE DISTURB IN MULTI-PORT MEMORIES - A circuit comprises a memory cell, a first circuit, and a second circuit. The memory cell has a first control line and a second control line. The first control line carries a first control signal. The second control line carries a second control signal. The first circuit is coupled with the first control line, the second control line, and a node. The second circuit is coupled to the node and is configured to receive a first clock signal and a second clock signal. The first circuit and the second circuit, based on the first control signal, the second control signal, the first clock signal and the second clock signal, are configured to generate a node signal on the node. A logical value of the node signal indicates a write disturb condition of the memory cell. | 2015-10-22 |
20150302939 | MEMORY WITH REDUNDANCY - Structures for substituting single bits in an array may include a first array having a plurality of word lines, and for each of the plurality of word lines a memory operable to store a bit substitution column value, and a first data output line operable to communicate the bit substitution column value to a write data shifter. The bit substitution column value may be associated with a bit substitution column in a second array, and the write data shifter may be operable to substitute the bit by shifting data to a redundancy column in the first array. | 2015-10-22 |
20150302940 | Electromagnetic Matter Injector and Capsule System | 2015-10-22 |
20150302941 | Nuclear reactor fuel assembly - The present disclosure provides for designs of fuel assemblies and may be used in pressurized water reactors. In some embodiments, a nuclear reactor fuel assembly may comprise a bundle of fuel rods, guide channels, two nozzles, one of which has a bearing plate with openings, elements for the detachable connection of the nozzles to the guide channels, a detachable connection locking device and a locking device fasteners, the elements for the detachable connection of the nozzles to the guide channels have a cross-section size greater than the size of the openings in the nozzle bearing plate. The present disclosure may provide greater ease in loading and unloading, reduce the time required for the mounting and removal of the nozzles during manufacture of the fuel assembly, and reduce the length of the reactor refueling process. | 2015-10-22 |
20150302942 | OXIDE NUCLEAR FUEL WHICH IS A REGULATOR OF CORROSIVE FISSION PRODUCTS, ADDITIVATED WITH AT LEAST ONE OXIDATION-REDUCTION SYSTEM - A supplemented nuclear fuel comprises a nuclear fuel of oxide type which generates fission products such as tellurium, cesium and iodine, which generate via chemical interaction species that are potentially corrosive, supplemented with at least one redox system comprising a first and second species comprising a common element having a different degree of oxidation in each of the two species, the system having an oxygen potential curve as a function of the temperature that is within an interval delimited by:
| 2015-10-22 |
20150302943 | SOLIDIFIED BODY OF RADIOACTIVE WASTE AND PRODUCTION METHOD THEREOF - Provided is a technique for solidifying radioactive waste, which enables stable final disposal of a large amount of radioactive waste with a simple process. | 2015-10-22 |
20150302944 | Combined Moderator/Target For Neutron Activation Process - The present invention relates to combined moderator/target structures that significantly increase the initial energy spectrum of neutrons generated in a nuclear reactor within the thermal range of said spectrum. Said combined moderator/target structures can be applied in all cases, wherein the neutron-capture cross-section of the target—or a certain isotope therein—is at least 2.0 barn for thermal neutrons. | 2015-10-22 |
20150302945 | SYSTEMS AND METHODS FOR IMPROVED COLLIMATION SENSITIVITY - A collimator assembly is provided including a parallel-hole collimator and a pin-hole collimator. The parallel-hole collimator includes plural walls defining parallel holes therebetween, with the parallel holes arranged around a central opening. The pin-hole collimator includes a pin-hole formed in a body, with the pin-hole collimator disposed within the central opening. | 2015-10-22 |
20150302946 | TRANSLATING X-RAY BEAM TRANSMISSION PROFILE SHAPER - An imaging system ( | 2015-10-22 |
20150302947 | AGGLOMERATE COMPOSITION - A talc agglomerate composition may include agglomerated talc particles and an agglomerization agent, and may have a conductivity of from about 1 to about 50 μS/cm. A method for making a talc agglomerate composition may include agglomerating talc particles by combining a talc feed material including talc particles and an agglomerization agent to form a talc agglomerate composition. The talc agglomerate composition may have a d | 2015-10-22 |
20150302948 | COMPOSITE MATERIALS WITH MAGNETICALLY ALIGNED CARBON NANOPARTICLES HAVING ENHANCED ELECTRICAL PROPERTIES AND METHODS OF PREPARATION - Magnetically aligned carbon nanoparticle composites have enhanced electrical properties. The composites comprise carbon nanoparticles, a host material, magnetically sensitive nanoparticles and a surfactant. In addition to enhanced electrical properties, the composites can have enhanced mechanical and thermal properties. | 2015-10-22 |
20150302949 | APPARATUS AND METHOD FOR NANOCOMPOSITE SENSORS - A sensing material for use in a sensor is disclosed. Such a sensing material includes a polymer base and a piezoresistive nanocomposite embedded into the polymer base in a continuous pattern. The nanocomposite comprises a polymer matrix and a plurality of conductive nanofillers suspended in the matrix. The conductive nanofillers may be one or a combination of nanotubes, nanowires, particles and flakes. The density of the plurality of nanofillers is such that the nanocomposite exhibits conductivity suitable for electronic and sensor applications. | 2015-10-22 |
20150302950 | DOPED CARBON NANOTUBES AND TRANSPARENT CONDUCTING FILMS CONTAINING THE SAME - Transparent conducting electrodes include a doped single walled carbon nanotube film and methods for forming the doped single walled carbon nanotube (SWCNT) by solution processing. The method generally includes depositing single walled carbon nanotubes dispersed in a solvent and a surfactant onto a substrate to form a single walled carbon nanotube film thereon; removing all of the surfactant from the carbon nanotube film; and exposing the single walled carbon nanotube film to a single electron oxidant in a solution such that one electron is transferred from the single walled carbon nanotubes to each molecule of the single electron oxidant. | 2015-10-22 |
20150302951 | TRANSPARENT CONDUCTIVE FILM HAVING BENDING RESISTANCE, AND METHOD FOR MANUFACTURING SAME - Provided is a transparent conductive film which includes: a transparent base material; hard coating layers formed on either surface of the transparent base material; and at least one transparent conductive layer formed on the hard coating layer. Also provided is a method for manufacturing the transparent conductive film, which includes: a step of forming hard coating layers on either surface of the transparent base material; and a step of forming the transparent conductive layer on the hard coating layer using a sputtering method. | 2015-10-22 |
20150302952 | FLAME RETARDANT TWIN AXIAL CABLE - A cable includes a plurality of conductor sets. Each conductor set extending along a length of the cable and includes two or more insulated conductors, each insulated conductor including a central conductor surrounded by a dielectric material that includes polyolefin, a brominated flame retardant, and antimony trioxide. First and second conductive shielding films are disposed on opposite first and second sides of the conductor set, including cover portions and pinched portions arranged such that, in transverse cross section, the cover portions of the first and second shielding films in combination substantially surround the conductor set, and the pinched portions of the first and second shielding films in combination form pinched portions of the conductor set on each side of the conductor set. The cable includes an adhesive layer bonding the first shielding film to the second shielding film in the pinched portions of the conductor set. | 2015-10-22 |
20150302953 | SELF-SUPPORTING CABLE AND COMBINATION COMPRISING A SUSPENSION ARRANGEMENT AND SUCH SELF-SUPPORTING CABLE - A self-supporting cable including an outer portion and an inner portion is provided, as well as a combination of a self-supporting cable and a suspension arrangement. The inner portion includes at least one insulated conductor and the outer portion includes a first inner surface and an external surface. The external surface is arranged to engage with a suspension arrangement. The inner portion includes a first outer surface, the first outer surface abutting against the first inner surface. The outer portion includes an outer layer and a metal tape adhered to the outer layer. The outer layer includes the external surface, and the metal tape includes the first inner surface. The first inner surface being of metal and adapted for, during local load, frictional engagement with the material of the first outer surface increases the effectiveness of a functional grip between first outer surface and first inner surface. | 2015-10-22 |
20150302954 | INSERT BUS BAR PLATE AND METHOD FOR MANUFACTURING THE SAME - An insert bus bar plate includes a plate-shaped resin material and a plurality of metal bus bars that are embedded within the resin material by insert molding and have a terminal part exposed to a mounting surface that is one of principal faces of the resin material. The bus bars are formed, before the insert molding, as a bus bar assembly before molding the one ends different from the terminal part of which are coupled to each other by a carrier to be cut after the insert molding. The insert bus bar plate (a substrate main body) is formed by the insert molding performed by oppositely arranging two bus bar assemblies before molding of the same shape so that two terminal parts are positioned in between two carriers. | 2015-10-22 |
20150302955 | HEADER SUB-ASSEMBLIES - A dielectric header sub-assembly includes a header body with opposed first and second surfaces and a side wall. The first and second surfaces define a header axis extending therebetween. The side wall extends from the first surface to the second surface. The second surface includes a tapered portion. A dielectric header sub-assembly includes a bore. The bore extends from the first surface to the second surface. A first bore opening of the bore proximate to the first surface is greater in area than a second bore opening of the bore proximate the second surface. A method of assembling a header sub-assembly includes inserting an electrical connector into a bore of a header body, applying an active braze filler material into the bore and applying heat to braze the active braze filler material to the header body and the electrical connector. | 2015-10-22 |
20150302956 | VARISTOR - An electrically adjustable memory effect resistor comprises a stack comprising a superconductive material extending along an axis, a ferroelectric material and a conductive third material. The adjustable resistor comprises a means for controlling electrical voltage allowing an electric field to be generated between the superconductive material and the conductive material allowing the polarization direction of the ferroelectric second material to be modified. The adjustable resistor furthermore comprises an electrically insulating material placed between the ferroelectric material and the conductive material, the thickness of the insulating material varying in a direction parallel to the axis—so as to cause a variation in the electric field applied between the first layer and the third layer. | 2015-10-22 |
20150302957 | METHOD OF LASER TRIMMING AT LOW AND HIGH TEMPERATURES - A method for high and low temperature laser trimming of resistors is provided. The method includes a ceramic heating plate for heating resistors to a designated temperature before trimming the resistors. | 2015-10-22 |
20150302958 | FERRITE SINTERED PLATE AND FERRITE SINTERED SHEET - The present invention relates to an Ni—Zn—Cu—Co ferrite sintered plate having a composition comprising 45 to 50 mol % of Fe | 2015-10-22 |
20150302959 | R-T-B BASED PERMANENT MAGNET AND RAW ALLOY FOR THE SAME - In the present invention, a permanent magnet with excellent temperature properties and magnetic properties which will not significantly deteriorate can be stably prepared, by using a raw alloy for the R-T-B based permanent magnet in which the rare earth element(s) composed of at least one selected from the group consisting of Y, La and Ce is selected as a predetermined amount of the rare earth element R in the R-T-B based permanent magnet and a proper amount of Ca is contained. | 2015-10-22 |
20150302960 | MANUFACTURING METHOD OF A POWDER FOR COMPACTING RARE EARTH MAGNET AND THE RARE EARTH MAGNET OMITTING JET MILLING PROCESS - The present invention discloses manufacturing methods of a powder for compacting rare earth magnet and rare earth magnet that omit jet milling process, which comprise the steps as follows: 1) casting: casting the molten alloy of rare earth magnet raw material by strip casting method to obtain a quenched alloy with average thickness in a range of 0.2˜0.4 mm; 2) hydrogen decrepitation: decrepitating the quenched alloy hydrogen under a hydrogen pressure between 0.01˜1 MPa for 0.5˜24 h to obtain the powder. The present invention improves the manufacturing processes which are before the process of jet milling for omitting the process of jet milling, thus simplifying the process; which may also acquire a low cost production by efficiently using the precious rare earth resource. | 2015-10-22 |
20150302961 | FABRICATION METHOD OF RARE EARTH-BASED SINTERED MAGNET - Provided is a fabrication method of a rare earth-based sintered magnet including: a) a first doping step of mixing and sintering a first doping material including a first heavy rare earth compound with a rare earth-based magnet raw material powder to fabricate a first doped sintered body; and b) a second doping step of forming a coating layer of a second doping material including a second heavy rare earth compound on a surface of the first doped sintered body and performing a heat-treatment to fabricate a second doped sintered body. | 2015-10-22 |
20150302962 | Oriented Silicon Steel and Method for Manufacturing Same - The invention discloses an oriented silicon steel with excellent magnetic properties and a manufacturing method thereof. The present invention obtains the oriented silicon steel with excellent magnetic properties by controlling the area ratio of small crystal grains of D<5 mm in an oriented silicon steel finished product to be not more than 3%, and controlling the ratio μ17/μ15 of the magnetic conductivity under the magnetic induction of 1.7 T and 1.5 T in the oriented silicon steel finished product to be 0.50 or more. In addition, by using a slab of the oriented silicon steel with suitable components and an optimized cold rolling step, the present invention effectively decreases the heating temperature of the slab and the production cost thereof, and simultaneously better controls the size and ratio of the crystal grains in the oriented silicon steel finished product and the magnetic conductivity in a certain range of magnetic induction, ensures that secondary recrystallization has good Goss texture orientation and finally, stably obtains the oriented silicon steel product with excellent magnetic properties. | 2015-10-22 |
20150302963 | ELECTROMAGNETIC DRIVE COIL UNIT AND MOLDING METHOD THEREOF - A method of molding an electromagnetic drive coil unit is provided which can secure satisfactory strength and waterproof properties. In a method of molding an electromagnetic drive coil unit in which a stator assembly includes bobbins having stator coils wound thereon and yokes in which an inner yoke having magnetic pole teeth and an outer yoke having magnetic pole teeth are combined and in which the stator assembly and a power supply terminal supplying power to the bobbins are molded in a resin, an inner molding process is performed on the inside of the outer yoke in a state where ends of the stator coils of the stator assembly are connected to the power supply terminal and an outer molding process is performed to cover an outer circumference of the stator assembly having an inner molded portion and an outside of the power supply terminal after the inner molding process. | 2015-10-22 |
20150302964 | ELECTRICAL COMPONENT FOR ATTACHMENT TO PAPER AND OTHER SUBSTRATES AND MAGNETIC ATTACHMENT MECHANISM - An electrical component for attachment to paper and other substrates comprises, according to one embodiment, a functional electronic part including one or more support pillars on an underside thereof. Each of the support pillars comprises: a channel extending therethrough from a top opening to a bottom opening, where the top opening of the channel is adjacent to the functional electronic part; and a magnet moveably positioned in the channel in electrical contact with the functional electronic part, where the bottom opening of the channel has a width smaller than a maximum lateral dimension of the magnet. | 2015-10-22 |
20150302965 | Spinning Magnet Apparatus - An apparatus of the present disclosure has a first magnet coupled to a frame and a position of the first magnet vertically adjustable and a second magnet coupled to the frame and positioned and arranged in vertical alignment with the first magnet along a magnetic axis common to the first and second magnets, such that the first magnet is free to rotate about the magnetic axis. The spinning magnet apparatus demonstrates that the external magnetic field caused by the magnets is not fixed to the material matrix of the magnets. | 2015-10-22 |
20150302966 | PROGRAMMABLE ACTUATION FORCE INPUT FOR AN ACCESSORY AND METHODS THEREOF - A system that incorporates the subject disclosure may include, for example, a button including a fixed force magnet coupled to a first housing assembly component serving as a top portion of the button, a variable force magnet coupled to a second housing assembly serving as a bottom portion of the button, and a spring coupled to the fixed force magnetic and the variable force magnet for repelling the fixed force magnet from the variable force magnet according to a spring constant of the spring. The variable force magnet emitting a magnetic field to counter the spring constant and thereby adjust a force required to depress the button. Additional embodiments are disclosed. | 2015-10-22 |
20150302967 | MULTILAYERED ELECTROMAGNETIC ASSEMBLY - A multilayered electromagnetic assembly. The assembly has a plurality of substantially planar substrate layers, each substrate layer having a cutaway portion. An insulated electrically conductive material is provided, arranged in a spiral configuration on at least two of the substrate layers. The spiral configuration is formed from adjacent the cutaway portion to the edges of the substrate layer. The electrically conductive material is formed substantially on and/or partially recessed or beneath the surface of the substrate layer. The spiral configurations has first and second electrical contacts that are operable to pass electric current to electrical contacts of spiral configurations on other substrate layers. A ferromagnetic core is located through the cutaway portions of the substrate layers. The substrate layers are stacked and an electrical current is passed sequentially through the two or more spiral configurations, thereby generating a magnetic field in the core. | 2015-10-22 |
20150302968 | MAGNETIC ELEMENT WITH MULTIPLE AIR GAPS - A magnetic element includes a first magnetic core, a second magnetic core, an intermediate magnetic core, a first winding coil, and a second winding coil. The intermediate magnetic core is arranged between the first magnetic core and the second magnetic core. After the first magnetic core and the intermediate magnetic core are coupled with each other, a first winding space and a first air gap are defined. After the second magnetic core and the intermediate magnetic core are coupled with each other, a second winding space and a second air gap are defined. The first winding coil is disposed within the first winding space and arranged around the first air gap. The second winding coil is disposed within the second winding space and arranged around the second air gap. The first winding coil and the second winding coil are connected with each other in series. | 2015-10-22 |
20150302969 | Transformer with Improved Power Handling Capacity - Disclosed is an electrical transformer for improved transformer power capacity and efficiency designed by the application of disclosed design considerations. One embodiment design consideration is a method to configure power transformer windings wherein the minimum distance of the primary windings from the winding axis/core center is greater (the primary windings are more distal) from the winding axis than the minimum distance of the secondary windings, which are wound around the minimum interior core diameter. This design consideration is extended from single bobbin transformer designs to split bobbin designs, with the requisite distal increase of the primary windings (from the core axis) geometrically provided by an enlarged core bobbin center leg (axial) dimension beneath the primary winding window. Another disclosed design consideration is to fix the primary winding length relationship to the core weight for given transformer specifications in accordance with the disclosed unexpected experimental results and formula. | 2015-10-22 |
20150302970 | Magnetic Core - The invention relates to a magnetic core, and more particularly, to a magnetic switch, a magnetic amplifier and an inductor based on the magnetic core. | 2015-10-22 |
20150302971 | INDUCTION COIL HAVING A CONDUCTIVE WINDING FORMED ON A SURFACE OF A MOLDED SUBSTRATE - The following examples and embodiments are directed to an induction coil that can be used in a variety of applications, including, for example, induction charging systems. In one example, an induction coil is configured to couple an electrical field between a base device and a mobile device in an inductive charge system. The induction coil includes a coil substrate formed by a molding process. The induction coil also includes a shield element disposed within the coil substrate. The shield element may be formed within the coil substrate as part of the molding process. A conductive winding is also formed within a surface of the coil substrate. In some cases, the coil substrate is formed by an injection-molding process. | 2015-10-22 |
20150302972 | PLANAR TYPE TRANSFORMER AND SWITCHING POWER SUPPLY CIRCUIT - A planar type transformer includes: a multilayer substrate including a primary main winding pattern and a secondary main winding pattern that perform first power transmission, the primary main winding pattern and the secondary main winding pattern being stacked with an insulating layer interposed between the primary main winding pattern and the secondary main winding pattern; and an auxiliary winding that is disposed outside the multilayer substrate and performs second power transmission between the auxiliary winding and the primary main winding pattern or the secondary main winding pattern. | 2015-10-22 |
20150302973 | PASSIVE DEVICE SUBSTRATE - A passive device substrate includes a substrate, a passive device disposed at a first surface of the substrate, an insulating layer disposed on the first surface of the substrate to cover the passive device, a magnetic layer disposed on an opposite side of the insulating layer from the substrate to overlap the passive device in a plan view taken in a thickness direction of the substrate, and a metal layer disposed on a second surface of the substrate to overlap the passive device in the plan view. | 2015-10-22 |
20150302974 | MAGNETIC-CORE THREE-DIMENSIONAL (3D) INDUCTORS AND PACKAGING INTEGRATION - A 3-dimensional (3-D) magnetic core device includes a substrate, a first magnetic shell formed on the substrate, and a first group of conductive traces embedded in a first insulator layer formed on the first magnetic shell. A magnetic core plane is formed on the first insulator layer, and a second group of conductive traces are embedded in a second insulator layer formed on the magnetic core plane. A second magnetic shell is formed on the second insulator layer, and the first and second group of conductive traces are conductively coupled by using conductive vias. | 2015-10-22 |
20150302975 | Vertical Inductor and Method of Manufacturing the Same - A spiral inductor formed in a vertical plane relative to a planar surface of a substrate includes a plurality of through holes disposed in the vertical plane and spaced apart from each other, a metal interconnect structure on the top surface, and a redistribution layer on the bottom surface and having at least one bottom metal layer. The metal interconnect structure and the redistribution layer are connected to each other through the plurality of through holes to form the vertical spiral inductor. The thus formed vertical spiral inductor has a significantly reduced surface area comparing with lateral spiral inductors. | 2015-10-22 |
20150302976 | EFFECTIVE MAGNETIC SHIELD FOR ON-CHIP INDUCTIVE STRUCTURES - A magnetic shield for an inductor is disclosed that may substantially reduce unwanted magnetic coupling from other inductive circuitry. An inductive apparatus includes an inductor and a magnetic shield to shield the inductor from magnetic coupling effects. The magnetic shield includes an inductive ring formed from a plurality of turns surrounding the inductor. The magnetic shield may be used to reduce a magnetic coupling between the inductor and an inductive circuit element. Thus, the number of turns of the inductive ring may be based on the magnetic coupling between the inductor and the inductive circuit element. Further, a distance between the magnetic shield and the inductor may be based on the number of turns of the inductive ring. The distance between the magnetic shield and the inductor is to offset a magnetic coupling between the inductor and the magnetic shield. | 2015-10-22 |
20150302977 | COIL STRUCTURE AND ELECTRIC POWER CONVERSION DEVICE - Disclosed is a coil structure including: a first wire rod including a first coil portion and a first lead wire connected to the first coil portion, the first coil portion winding around a coil axis in a first space; a second wire rod including a second coil portion, the second coil portion winding around the coil axis in a second space, the second space being aligned with the first space along the coil axis; and an insulating structure including a first insulating section that insulates the first coil portion from the second coil portion. The first lead wire portion extends through the second space. The insulating structure fixes the first lead wire portion at a position that is away from the second coil portion by not less than a minimum creepage distance between the first and second coil portions, the minimum creepage distance being defined by the first insulating section. | 2015-10-22 |
20150302978 | BOBBIN STRUCTURE WITH WINDING GROOVES FOR ADJUSTING COUPLING - A bobbin structure with winding grooves for adjusting coupling at least includes: a bobbin body, a hole provided in the bobbin body for allowing magnetic wires to pass through, and at least three separated winding grooves with different lengths provided around the outer peripheral side of the hole. The primary winding (or the secondary winding) of the coils of a transformer is selectively wound into one of the winding groove, while the secondary windings (or the primary windings) are wound into the rest of the winding grooves. By altering the numbers of turns of the secondary windings (or the primary windings) distributed in the winding grooves, different coupling effects can be achieved with respect to the primary winding (or the secondary winding). As a result, the transformer leakage inductance and the output impedance can be conveniently adjusted. The design of multiple grooves also reduces the stray capacitances of the windings, thereby increasing the bandwidth of the transformer. | 2015-10-22 |
20150302979 | STRUCTURE OF TRANSFORMER - An improved structure of a transformer includes a bobbin covering at least a portion of a magnetic core set which has a magnetic loop passing through the bobbin, wherein winding grooves and at least one connecting portion extending sideways are provided on the outer peripheral side of the bobbin, and a plurality of notches with lateral openings are provided on the connecting portion. Coils are wound in the winding grooves of the bobbin. The coils have at least a plurality of line ends, each line end passing through a different notch. One positioning pin is embedded in each of the winding grooves near the lateral opening. The positioning pins hold the respective line ends in place by pressing against them. A casing is fitted on the outer peripheral side of the coils to create separation between the coils and the magnetic core set. The casing is provided with a hollow opening such that the outer peripheral side of the coils facing the airflow is exposed to improve the overall heat dissipating efficiency. | 2015-10-22 |
20150302980 | COMPOSITE ELECTRONIC COMPONENT - A composite electronic component with a built-in coil is provided which can be produced inexpensively, which can effectively increase insulating reliability, and which has the antistatic function. Coil wirings are disposed inside a sintered body that is formed by stacking a plurality of ferrite layers, which are fired as an integral unit. Voltage nonlinear members are incorporated in the sintered body at a different height position from those of the coil wirings. First inner electrodes and second inner electrodes are disposed in opposing relation with the voltage nonlinear members interposed therebetween. A magnetic circuit forming portion is constituted by a part of the ferrite layers and the coil wirings in a portion in which the coil wirings are arranged, and an antistatic portion is constituted in a portion in which the remaining ferrite layers, the voltage nonlinear members, and the first and second inner electrodes are arranged. | 2015-10-22 |
20150302981 | TRANSFORMER - There is provided a transformer in which leakage inductance can be adjusted arbitrarily and which can be readily processed and achieves reduction in size. The transformer includes: a primary coil ( | 2015-10-22 |
20150302982 | MEMS TUNABLE INDUCTOR - Embodiments of the present invention provide a tunable inductor having a magnetic core which has an air gap. In order to vary the inductance of the inductor, the inductor includes a tuner that is moveable relative to the magnetic core in the vicinity of the air gap. An actuator is attached to the tuner which, upon actuation, moves the tuner relative to the magnetic core to thereby vary the spacing between the tuner and the core in the vicinity of the air gap. The variation of the spacing between the tuner and the magnetic core varies the effective air gap of the overall inductor in the desired fashion. | 2015-10-22 |
20150302983 | WIRELESS POWER TRANSMISSION SYSTEM FOR FREE-POSITION WIRELESS CHARGING OF MULTIPLE DEVICES - The present invention relates to a near-field wireless power transfer system capable of having a constant efficiency regardless of a charging position of a receiver by only using a simple impedance matching circuit without using a separate existing complex adaptive impedance matching circuit or control circuit, and simultaneously transmitting power without having difficulty with impedance matching even for wireless power transmission to a plurality of electronic devices by applying a structure having a uniform mutual inductance between a wireless power transmitter and receiver. | 2015-10-22 |
20150302984 | WIRELESS POWER TRANSFER SYSTEMS WITH SHIELD OPENINGS - In a first aspect, the disclosure features apparatuses for wireless power transfer, the apparatuses including a plurality of magnetic elements joined together to form a magnetic component extending in a plane, where discontinuities in the magnetic component between adjacent magnetic elements define gaps in the magnetic component, a coil including one or more loops of conductive material positioned, at least in part, on a first side of the plane. The apparatuses include a conductive shield positioned on a second side of the plane and which includes one or more openings positioned relative to the gaps. | 2015-10-22 |
20150302985 | WIRELESS POWER TRANSFER SYSTEMS WITH SHAPED MAGNETIC COMPONENTS - In a first aspect, the disclosure features apparatuses for wireless power transfer, the apparatuses including a coil formed of a conductive material. The coil includes a plurality of loops, where the plurality of loops defines an internal region of the coil that extends along a coil axis. The apparatuses include a magnetic component, where the magnetic component is disposed in the internal region and extends in a first direction parallel to the coil axis and in a second direction perpendicular to the coil axis. A maximum dimension of the magnetic component measured in the second direction varies along the first direction. | 2015-10-22 |
20150302986 | PERMANENT MAGNET AND METHOD OF PRODUCING PERMANENT MAGNET - A permanent magnet has a grain structure that includes a main phase and a grain boundary phase that is primarily composed of a first metal. A second metal that enhances the coercivity of the permanent magnet and a third metal that has a lower standard free energy of oxide formation than the first metal and the second metal are diffused in the permanent magnet, and the third metal is present in the form of an oxide in the grain boundary phase. | 2015-10-22 |
20150302987 | PRODUCTION METHOD FOR COIL ELEMENT, COIL ELEMENT ASSEMBLY, AND COIL COMPONENT - A method for producing a coil element includes preparing a transfer mold having an inverse coil element pattern etched thereon, forming a peel-away film and an insulating film on the surface of the transfer mold in a superimposed manner, forming a resist film in an area having no inverse coil element pattern formed therein on the insulating film, removing by etching the insulating film with the resist film as a mask, after removing the resist film, filling up an area having the inverse coil element pattern formed therein and forming a central conductive film by first electroplating so as to slightly protrude above the insulating film, peeling the central conductive film from the transfer mold, and forming a surface conductive film by second electroplating with the central conductive film as a foundation and forming a coil element comprised of the central conductive film and the surface conductive film. | 2015-10-22 |
20150302988 | RECTANGULAR WIRE EDGEWISE-BENDING PROCESSING DEVICE AND RECTANGULAR WIRE EDGEWISE-BENDING PROCESSING METHOD - Provided is a rectangular wire edgewise-bending processing device for performing an edgewise-bending process for a rectangular wire to form a coil, the rectangular wire edgewise-bending processing device including a fixing unit for fixing the rectangular wire, a pressing tool for pressing a surface formed by a long side of a rectangular cross section of the rectangular wire, and a bending tool for bending the rectangular wire into a predetermined coil shape, wherein the edgewise-bending process is performed while the surface formed by the long side of the rectangular cross section of the rectangular wire is pressed. | 2015-10-22 |
20150302989 | MULTILAYER CERAMIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME - A multilayer ceramic capacitor may include a capacitance forming layer including dielectric layers and internal electrodes disposed on the dielectric layers; a lower cover layer disposed below the capacitance forming layer; an upper cover layer disposed above the capacitance forming layer; and a plurality of crack inducing air gaps disposed in the lower cover layer. | 2015-10-22 |
20150302990 | MULTILAYER FILM INCLUDING FIRST AND SECOND DIELECTRIC LAYERS - A multilayer dielectric film including a first dielectric layer made from a material having a first breakdown field strength and a second dielectric layer disposed on the first dielectric layer made from a material having a different breakdown filed strength. A multilayer film including first and second electrically conductive layers separated by at least first and second dielectric layers is also disclosed. The first dielectric layer is disposed on the first electrically conductive layer, and the second dielectric layer is disposed on the first dielectric layer. The first electrically conductive layer can have at least one of an average surface roughness of at least ten nanometers, a thickness of at least ten micrometers, or an average visible light transmission of up to ten percent. The first dielectric layer may be a polymer and typically has a lower dielectric constant than the second dielectric layer, which may be ceramic. | 2015-10-22 |
20150302991 | MULTILAYER CERAMIC CAPACITOR AND CIRCUIT BOARD FOR MOUNTING THE SAME - A multilayer ceramic capacitor may include: a ceramic body in which dielectric layers having first via holes are stacked in a thickness direction; first internal electrodes having second via holes disposed in positions corresponding to those of the first via holes and exposed to at least one side surface of the ceramic body; second internal electrodes having third via holes disposed in positions corresponding to those of the first and second via holes; a via electrode passing through the first to third via holes to thereby be exposed to upper and lower surfaces of the ceramic body, and connected to the third via holes; and a first external electrode disposed on the at least one side surface of the ceramic body to be connected to a portion of the first internal electrode exposed to the exterior of the ceramic body. | 2015-10-22 |
20150302992 | MULTILAYER CERAMIC CAPACITOR AND CIRCUIT BOARD HAVING THE SAME - There are provided a multilayer ceramic capacitor and a circuit board having the same. The multilayer ceramic capacitor may include: first and second internal electrodes connected to first and second external electrodes, respectively, and disposed to face each other; and third and fourth internal electrodes connected to the first and second external electrodes, respectively, and disposed to face each other, a connection area of the third and fourth internal electrodes with the first and second external electrodes being different from that of the first and second internal electrodes with the first and second external electrodes, and the first and second external electrodes including first and second conductive layers disposed in inner portions thereof and first and second conductive resin layers disposed in outer portions thereof, respectively. | 2015-10-22 |
20150302993 | MULTILAYER CERAMIC CAPACITOR USING POLING PROCESS FOR REDUCTION OF VIBRATION - The present invention relates to a multi-layer capacitor. The multi-layer capacitor of the present invention includes a main body formed by alternately stacking a plurality of dielectric layers and a plurality of inner electrode layers, in which all the plurality of dielectric layers are poled in a same direction; a cover layer for covering and protecting the main body from outside; and outer electrodes electrically connected to the inner electrode layers to apply voltage to the inner electrode layers. Since deformation is offset overall in the multi-layer capacitor of the present invention, the piezoelectric effect occurs in an opposite direction in each of adjacent dielectric layers due to the poling process, and thus the present invention has an effect of reducing vibration and noise. | 2015-10-22 |
20150302994 | ELECTRODE FOR CAPACITORS AND CAPACITOR USING SAME - A capacitor electrode includes a conductive base member and an electrode part electrically connected to the base member. The electrode part contains carbon particles of a first carbon material capable of adsorbing and desorbing ions. The electrode part further contains voids including first voids with diameters of not less than 0.2 μm and not more than 1.0 μm, and second voids with diameters of not less than 0.05 μm and less than 0.2 μm. The value of (V | 2015-10-22 |
20150302995 | COBALTCOMPLEX SALTS - The present invention relates to Cobaltcomplex salts and their use as redox active species or dopant for hole transport materials in electrochemical and/or optoelectronic devices. The present invention relates additionally to electrochemical and/or optoelectronic devices comprising said salts and electrolyte formulations comprising said salts. | 2015-10-22 |
20150302996 | PHOTOELECTRODE FOR DYE-SENSITIZED SOLAR CELLS, AND DYE-SENSITIZED SOLAR CELL - A photoelectrode for dye-sensitized solar cells of the present invention includes a light-transmitting substrate including a transparent electroconductive layer formed on a light-transmitting base; an adhesion layer formed on the transparent electroconductive layer, the adhesion layer being configured of an electroconductive portion formed of electroconductive particles and a coating layer formed by applying metal alkoxide thereon to cover the electroconductive particles; and a photoelectric conversion layer formed on the adhesion layer by using a photoelectric conversion material in which a sensitizing dye is supported on a functional semiconductor. | 2015-10-22 |
20150302997 | FLEXIBLE ELECTRODES AND PREPARATION METHOD THEREOF, AND FLEXIBLE DYE-SENSITIZED SOLAR CELLS USING THE SAME - The present invention relates to a flexible photoelectrode and a manufacturing method thereof, and a dye-sensitized solar cell using the same. More particularly, the present invention relates to a flexible photoelectrode capable of forming a semiconductor electrode with excellent photoelectric conversion efficiency on a plastic substrate at low temperatures in a simple and stable manner, in which it is prepared by forming a nanocrystalline metal oxide layer calcined at high temperature on a high temperature resistant substrate, and transferring it to a flexible transparent substrate by a transfer method using an HF solution, and a flexible dye-sensitized solar cell comprising the same. | 2015-10-22 |
20150302998 | Hybrid Supercharged Ultra Cell Technology to replaced Non Environmental Friendly Lead Acid Battery - This article discloses the Innovation of a Hybrid Supercharged Ultra Cell System where the Charging and Discharging Process is managed by the Energy Management Controller Hardware that can Charged and Discharged from the Graphene based Ultra Capacitors Bank at tremendous speed and Coupled with Lithium Buffer Energy Reservoir can power up Automobiles [Gas Engine Vehicle, Hybrid or Electric Vehicle], Solar Power Applications and other portable Power Storage Medium | 2015-10-22 |
20150302999 | HIGH ENERGY DENSITY ASYMMETRIC PSEUDOCAPACITOR AND METHOD OF MAKING THE SAME - A high energy density asymmetric pseudocapacitor includes a cathode plate, an anode plate, and a separator. The cathode plate includes a first conductive substrate and a porous cathode film formed on the first conductive substrate. The porous cathode film includes a carbon nano-tube network and a plurality of composite flakes. Each of the composite flakes contains graphene, a transition metal compound and carbon nano-tubes. The anode plate includes a second conductive substrate and an anode film formed on the second conductive substrate. The anode film contains graphene and carbon nano-tubes. | 2015-10-22 |
20150303000 | LITHIUM ION CAPACITOR, POWER STORAGE DEVICE, POWER STORAGE SYSTEM - By producing a positive electrode having a large capacity commensurate with the negative electrode capacity, a lithium ion capacitor having an increased capacity can be provided. A lithium ion capacitor includes a positive electrode including a positive electrode active material mainly composed of activated carbon and a positive electrode current collector, a negative electrode including a negative electrode active material capable of occluding and desorbing lithium ions and a negative electrode current collector, and a nonaqueous electrolyte containing a lithium salt, in which the positive electrode current collector is an aluminum porous body having a three-dimensional structure, the positive electrode active material is filled into the positive electrode current collector, and the negative electrode current collector is a metal foil or a metal porous body. | 2015-10-22 |
20150303001 | FABRICATION OF ENHANCED SUPERCAPACITORS USING ATOMIC LAYER DEPOSITION OF METAL OXIDE ON NANOSTRUCTURES - A method to a fabricate high surface area, high performance supercapacitor includes include applying a metal layer to at least a portion of a nanostructure; after applying the metal layer, oxidizing the metal layer; applying a plurality of additional metal layers onto a previously oxidized metal layer; and after applying each additional metal layer, oxidizing the additional metal layer prior to applying a successive additional metal layer. The metal layers may include a composition comprising at least one metal, the at least one metal selected from the group consisting of ruthenium, titanium, manganese, vanadium, iron, tin, cobalt and nickel. Optionally, each of the additional metal layers may be applied using atomic layering deposition (ALD). | 2015-10-22 |
20150303002 | CAPACITOR AND MANUFACTURING METHOD THEREOF - Provided is a method for manufacturing a capacitor. The method includes forming a separator on a first electrode, forming a second electrode on the separator, and filling pores with an electrolyte, wherein the separator includes patterns and pores defined by the patterns, and the patterns formed by directly applying an ink to the first electrode through a printing process. | 2015-10-22 |
20150303003 | SEPARATOR HAVING BINDER LAYER, AND ELECTROCHEMICAL DEVICE COMPRISING THE SEPARATOR AND METHOD OF PREPARING THE SEPARATOR - The present disclosure provides a separator comprising a porous substrate, a porous coating layer and a binder layer, the binder comprising at least one homopolylmer of polyvinylidene fluoride and at least one copolymer of polyvinylidene fluoride (PVDF)-co-hexafluoropropylene (HFP) so that a content difference of hexafluoropropylene (HFP) present in the two compounds is about 3 wt % or higher. | 2015-10-22 |
20150303004 | HIGH LOAD SWITCH FOR VEHICLE - The present invention relates to a high load switch for a vehicle, including: a case which has an opening formed at an upper side of the case; a first contact unit which is disposed at a lower side in the case; a second contact unit which is disposed at a lower side in the case and disposed directly above the first contact unit; and a contactor which has one end fixed to one side in the case, and the other end disposed between the first contact unit and the second contact unit, in which a portion of the contactor between the one end and the other end is continuously formed, and the contactor includes a pusher unit which is formed by being bent upward so that an intermediate portion thereof penetrates the opening and protrudes, and a reinforcement bead which is formed on a surface of the contactor, thereby preventing deformation in the contactor and enhancing durability. | 2015-10-22 |
20150303005 | SHAFT ASSEMBLY FOR ROTARY SWITCH - Described herein is a shaft assembly for a rotary switch that includes a shaft made from an electrically non-conductive material. The shaft includes at least one circumferential groove that has a generally T-shaped cross-section. The shaft assembly also includes at least one conductive ring segment made from an electrically conductive material positioned within the circumferential groove. The conductive ring segment has a generally T-shaped cross-section. Additionally, the shaft assembly includes a bonding adhesive that is positioned between the circumferential groove and the conductive ring segment. | 2015-10-22 |
20150303006 | ON-LOAD TAP CHANGER - The invention relates to an on-load tap changer for switching among different winding taps of a step transformer without interruption according to the preamble of the first patent claim. The general inventive concept lies in actuating both the selector contact unit and the switching means for uninterrupted load switching by means of a common motor drive without an energy store being connected therebetween. | 2015-10-22 |
20150303007 | LIGHT EMITTING SWITCH APPARATUS AND METHOD FOR MOLDING SWITCH KNOB FOR LIGHT EMITTING SWITCH APPARATUS - A light emitting switch apparatus includes a circuit, a switch that opens and closes a contact point of the circuit, a light emitting bulb that emits light, and a switch knob as an operation part of the switch. The switch knob includes a primary molded part configuring the translucent part and a secondary molded part configuring a design part other than the translucent part. The primary molded part includes a projection on an inside surface of the primary molded part projected along an opening-closing direction of a molding mold of the primary molded part. The projection is integrally molded with the primary molded part. The primary molded part and the secondary molded part are integrally molded by a multicolor molding method. | 2015-10-22 |
20150303008 | CABLE SWITCH - A cable switch comprising a first base member of a band shape provided with a conductor on an inner surface and a second base member facing the first base member, and including a flat positive electrode and a negative electrode, the positive electrode being provided on one side of an inner surface thereof and the negative electrode being provided on another side of the inner surface, a gap being formed between the positive electrode and the negative electrode for separating and insulating the positive electrode and the negative electrode from each other. | 2015-10-22 |