33rd week of 2013 patent applcation highlights part 17 |
Patent application number | Title | Published |
20130207064 | Rail and Baluster with Beveled End - A combination of a rail and a baluster with the baluster with beveled end having, near one or both ends of the baluster, the perimeter of the baluster proceed increasingly more inward as such end of the baluster is approached. There is some indentation at all points along the perimeter, although such indentation need not necessarily be uniform. In addition to the rail, also termed a lower rail, there is preferably a second rail, also termed an upper rail or hand rail. | 2013-08-15 |
20130207065 | BIPOLAR MULTISTATE NONVOLATILE MEMORY - Embodiments generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching capacity by using multiple layers of variable resistance layers. In one embodiment, the resistive switching element comprises at least three layers of variable resistance materials to increase the number of logic states. Each variable resistance layer may have an associated high resistance state and an associated low resistance state. As the resistance of each variable resistance layer determines the digital data bit that is stored, the multiple variable resistance layers per memory element allows for additional data storage without the need to further increase the density of nonvolatile memory devices. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. | 2013-08-15 |
20130207066 | PLANAR RESISTIVE MEMORY INTEGRATION - In an example, a single damascene structure is formed by, for example, providing a dielectric layer, forming a void in the dielectric layer, and forming a portion of a first two-terminal resistive memory cell and a portion of a second two-terminal resistive memory cell within the void. The portions of the two-terminal resistive memory cells may be vertically stacked within the void. | 2013-08-15 |
20130207067 | VERTICAL SELECTION TRANSISTOR, MEMORY CELL, AND THREE-DIMENSIONAL MEMORY ARRAY STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present disclosure discloses a vertical selection transistor, a memory cell having the vertical selection transistor, a three-dimensional memory array structure and a method for fabricating the three-dimensional memory array structure. The vertical selection transistor comprises: an upper electrode; a lower electrode; a first semiconductor layer, a second semiconductor layer, a third semiconductor layer and a fourth semiconductor layer vertically stacked between the lower electrode and the upper electrode; and a gate stack formed on a side of the second semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are first type doped layers, the second semiconductor layer and the fourth semiconductor layer are second type doped layers, and a doping concentration of the second semiconductor layer is lower than that of the first semiconductor layer or that of the third semiconductor layer respectively. | 2013-08-15 |
20130207068 | MEMORY CELLS AND MEMORY CELL FORMATION METHODS USING SEALING MATERIAL - Memory cells, arrays of memory cells, and methods of forming the same with sealing material on sidewalls thereof are disclosed herein. One example of forming a memory cell includes forming a stack of materials, forming a trench to a first depth in the stack of materials such that a portion of at least one of the active storage element material and the active select device material is exposed on sidewalls of the trench. A sealing material is formed on the exposed portion of the at least one of the active storage element material and the active select device material and the trench is deepened such that a portion of the other of the at least one of the active storage element material and the active select device material is exposed on the sidewalls of the trench. | 2013-08-15 |
20130207069 | METAL-INSULATOR TRANSITION SWITCHING DEVICES - A metal-insulator transition switching device includes a first electrode and a second electrode. A channel region which includes a bulk metal-insulator transition material separates the first electrode and the second electrode. A method for forming a metal-insulator transition switching device includes depositing a layer of bulk metal-insulator transition material in between a first electrode and a second electrode to form a channel region and forming a gate electrode operatively connected to the channel region. | 2013-08-15 |
20130207070 | Nanocomposite Material And Its Use In Optoelectronics - Material comprising a matrix made of semiconducting or insulating, transparent material in which core/shell type nanoparticles are dispersed, the core of which consists of a semiconductor and the shell of which is formed from a material chosen from the oxides TiO | 2013-08-15 |
20130207071 | LIGHT EMITTING DIODE ARRAY - A light emitting diode (LED) array includes a substrate with an array having a plurality of LED chips thereon, a dielectric layer, a plug, and a conductive connection layer. Each of the LED chips is isolated from another LED chip adjacent thereto by a trench. The dielectric layer covers a surface of the substrate exposed by the trench and sidewalls and partial surfaces of the LED chips adjacent to the trench. The plug fills the trench. The conductive connection layer is disposed over the plug and the dielectric layer to connect the LED chips with the LED chips adjacent thereto. Radiation emitted from one of the LED chips can be reflected by the dielectric layer and the plug, and finally reflected and output from a side of the LED chip not adjacent to the trench, thereby not affecting the adjacent LED chip and being absorbed by it. | 2013-08-15 |
20130207072 | OPTICAL STRUCTURE AND LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a light emitting unit, and a first optical structure. The light emitting unit is disposed on a top surface of the substrate. The first optical structure is disposed on the light emitting unit. The first optical structure includes a plurality of first nanostructures and a plurality of first quantum dot units. Each of the first quantum dot units is disposed in the first nanostructure. The light emitting unit is used to generate a first color light. Each of the first quantum dot units is used to be excited by the first color light to generate a second color light different from the first color light. | 2013-08-15 |
20130207073 | Quantum Dot White and Colored Light Emitting Devices - A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence. | 2013-08-15 |
20130207074 | LIGHT EMITTING DEVICE HAVING MGO PYRAMID STRUCTURE AND METHOD FOR FABRICATING THE SAME - A gallium nitride-based group III-V compound semiconductor light emitting device and a method for fabricating the same are provided. The gallium nitride-based group III-V compound semiconductor light emitting device includes: a substrate; a p-type ohmic electrode layer formed on the substrate; a p-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type ohmic electrode layer; an n-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type gallium nitride-based group III-V compound semiconductor layer; an n-type ohmic electrode layer formed on the n-type gallium nitride-based group III-V compound semiconductor layer; and first and second refractive index adjustment layers having refractive index smaller than those of the n-type gallium nitride-based group III-V compound semiconductor layer and the n-type ohmic electrode layer, wherein a pyramid structure is formed on the surface of the second refractive index adjustment layer. | 2013-08-15 |
20130207075 | NANOSCALE EMITTERS WITH POLARIZATION GRADING - A nanowire comprises a polar semiconductor material that is compositionally graded along the nanowire from a first end to a second end to define a polarization doping profile along the nanowire from the first end to the second end. The polar semiconductor material may comprise a group IH-nitride semiconductor, such as an alloy of GaN and AlN, or an alloy of GaN and InN. Such nanowires may be formed by nucleating the first ends on a substrate, growing the nanowires by depositing polar semiconductor material on the nucleated first ends on a selected growth face, and compositionally grading the nanowires during growth to impart the polarization doping. The direction of the compositional grading may be reversed during the growing of the nanowires to reverse the type of the imparted polarization doping. In some embodiments, the reversing forms n/p or p/n junctions in the nanowires. | 2013-08-15 |
20130207076 | METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A group III nitride semiconductor light emitting device with a satisfactory ohmic contact is provided. The group III nitride semiconductor light emitting device includes a junction JC which tilts with respect to the reference plane that is orthogonal to a c-axis of a gallium nitride based semiconductor layer. An electrode forms the junction with the semipolar surface of the gallium nitride based semiconductor layer. The oxygen concentration of the grown gallium nitride based semiconductor layer that will form the junction JC is reduced. Since the electrode is in contact with the semipolar surface of the gallium nitride based semiconductor layer so as to form the junction, the metal-semiconductor junction has satisfactory ohmic characteristics. | 2013-08-15 |
20130207077 | METHODS FOR MAKING WATER SOLUBLE QUANTUM DOTS - A novel quantum dot containing two different metals at non-toxic levels which is capable of narrow bandwidth near infrared emissions at wavelengths of 600-1100 nm. The quantum dot is fabricated via an aqueous method which forms a structure having an inner region of one composition and an outer region of a different composition, wherein the inner region contains at least a first metal and the outer region contains at least a second metal. The quantum dots may be enabled for bioconjugation and may be used in a method for tissue imaging and analyte detection. | 2013-08-15 |
20130207078 | InGaN-Based Double Heterostructure Field Effect Transistor and Method of Forming the Same - A double heterojunction field effect transistor (DHFET) includes a substrate, a buffer layer consisting of GaN back-barrier buffer layer formed on the substrate, a channel layer consisting of an In | 2013-08-15 |
20130207079 | Tapered Nanowire Structure With Reduced Off Current - Non-planar semiconductor devices including at least one semiconductor nanowire having a tapered profile which widens from the source side of the device towards the drain side of the device are provided which have reduced gate to drain coupling and therefore reduced gate induced drain tunneling currents. | 2013-08-15 |
20130207080 | BILAYER GATE DIELECTRIC WITH LOW EQUIVALENT OXIDE THICKNESS FOR GRAPHENE DEVICES - A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer. | 2013-08-15 |
20130207081 | ORGANIC SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD, AND COMPOUND - An organic semiconductor device which has an organic semiconductor layer formed by crystallizing a compound represented by the following formula (1) from a solution of the compound: | 2013-08-15 |
20130207082 | ORGANIC LIGHT-EMITTING DEVICE HAVING IMPROVED EFFICIENCY CHARACTERISTICS AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME - An organic light-emitting device including a first electrode, a second electrode opposite to the first electrode, a phosphorescent layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the phosphorescent emission layer and the second electrode, and an electron control layer disposed between the phosphorescent emission layer and the electron transport layer. An organic light-emitting display apparatus including the OLED. | 2013-08-15 |
20130207083 | Light-Emitting Device and Method for Manufacturing the Same - A light-emitting device is disclosed comprising an organic light-emitting diode structure and an encapsulation comprising a light-transmitting window with at least a first inorganic layer, an organic layer and a second inorganic layer, the organic layer comprising domains of a dispersed first organic component embedded by a second component, the first and the second component having a mutually different refractive index, the organic layer being sandwiched between the first and the second inorganic layer. | 2013-08-15 |
20130207084 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode display includes a p-doped layer that can obtain high efficiency at low-voltage driving and low current and prevent leakage current by differentially forming the p-doped layer for each pixel. | 2013-08-15 |
20130207085 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode display includes a common light emitting layer that can simplify the manufacturing process and prevent infiltration of a light emitting material to an adjacent pixel. The organic light emitting diode display has different light emitting layers disposed above and below the common light emitting layer. | 2013-08-15 |
20130207086 | ORGANIC ELECTROLUMINESCENT DEVICE - A light emitting device includes an organic electroluminescent material having a glass transition temperature substantially at or below an intended normal operation temperature of the device. A method for regenerating an organic light emitting device by heating an electroluminescent layer to a temperature substantially equal to or above its glass transition temperature is also described. This provides a means and method for regenerating a degraded emitter in use. | 2013-08-15 |
20130207087 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - An organic light emitting display device includes a light shield layer formed on a substrate and a buffer layer formed on an entire surface of the substrate, an oxide semiconductor layer and first electrode formed on the buffer layer, a gate insulation film and gate electrode formed on the oxide semiconductor layer while being deposited to expose both edges of the oxide semiconductor layer, an interlayer insulation film formed to expose both the exposed edges of the oxide semiconductor layer and the first electrode, source and drain electrodes connected with one edge and the other edge of the oxide semiconductor layer, respectively, and a protective film formed to cover the source and drain electrodes while exposing a region of the first electrode so as to define a luminescent region and a non-luminescent region. | 2013-08-15 |
20130207088 | Light-Emitting Element - Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes. | 2013-08-15 |
20130207089 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided is a method of fabricating an organic light-emitting device. The method of fabricating an organic light-emitting device includes: providing a substrate; forming a control electrode on the substrate; forming an insulating layer covering at least a top surface of the control electrode; forming a hole transport layer pattern through printing on at least a part of the insulating layer; forming an organic light-emitting layer to be in contact with at least a part of a surface of the hole transport layer pattern; forming an electron transport layer pattern through printing to be in contact with at least a part of a surface of the organic light-emitting layer; and forming a first electrode and a second electrode respectively on the hole transport layer pattern and the electron transport layer pattern. | 2013-08-15 |
20130207090 | Organic Photovotaics - The present disclosure is for improved organic semiconductors and improved organic photovoltaics. Liquid crystalline bent-core molecules in the B4 subphase of the present disclosure may be incorporated into improved organic semiconductors. Liquid crystalline bent-core molecules in the B4 subphase of the present disclosure may be incorporated into improved organic photovoltaics that may have improved quantum efficiencies over pre-existing organic photovoltaics. | 2013-08-15 |
20130207091 | PLANARIZATION LAYER FOR ORGANIC ELECTRONIC DEVICES - The invention relates to organic electronic devices containing polycycloolefin planarization layers between the substrate and a functional layer like a semiconducting layer, dielectric layer or electrode, to the use of polycycloolefins as planarization layer on the substrate of an organic electronic device, and to processes for preparing such polycycloolefin planarization layers and organic electronic devices. | 2013-08-15 |
20130207092 | COMPOUND FOR ORGANIC PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device is represented by the following Chemical Formula 1: | 2013-08-15 |
20130207093 | ORGANIC LIGHT EMITTING DEVICE COMPRISING ENCAPSULATING STRUCTURE - Provided is an organic light emitting diode including an organic light-emitting part including a first electrode, an organic material layer having a light-emitting layer, and a second electrode, and an encapsulating layer included on an entire top surface of the organic light-emitting part. Here, the encapsulating layer has a structure in which at least two of a water barrier film, a glass cap, a metal foil and a conductive film are stacked. Accordingly, the diode may have excellent water and oxygen barrier effects, and deterioration of the diode or running failure may be prevented. | 2013-08-15 |
20130207094 | METHOD FOR PROVIDING ELECTRICAL CONNECTION(S) IN AN ENCAPSULATED ORGANIC LIGHT-EMITTING DIODE DEVICE, AND SUCH AN OLED DEVICE - A process for manufacturing an encapsulated OLED device, which includes, after encapsulation of the device, a step of ultrasonic soldering at a first edge of the lower electrode, forming a lower electrical connection zone with a solder pad extending from the encapsulation surface as far at least as the surface of the lower electrode, and/or a step of ultrasonic soldering in an upper electrical connection zone with a solder pad extending from the encapsulation surface as far at least as the surface of the upper electrode. | 2013-08-15 |
20130207095 | MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to a blend comprising; a) at least one polymer or copolymer or a mixture of a plurality of polymers and/or copolymers which contain a main chain and a side chain, where at least one side chain contains a structural unit of the following formula (I), the symbols and indices used here are as defined below; b) at least one host molecule which has electron- or hole-transporting functionality, and c) at least one emitter molecule. | 2013-08-15 |
20130207096 | PHENANTHRENE COMPOUND AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - The present invention provides an organic light emitting device having high light emission efficiency. The organic light emitting device includes an anode, a cathode and an organic compound layer which is sandwiched between the anode and the cathode, wherein the organic compound layer contains a phenanthrene compound represented by the following general formula [1]: | 2013-08-15 |
20130207097 | ORGANIC ELECTROLUMINESCENT ELEMENT - Provided is an organic electroluminescent device (EL device) that uses an indolocarbazole compound. The organic EL device includes an anode, a plurality of organic layers including a phosphorescent light-emitting layer, and a cathode laminated on a substrate, in which at least one organic layer selected from the phosphorescent light-emitting layer, a hole-transporting layer, an electron-transporting layer, and a hole-blocking layer contains an indolocarbazole compound represented by the general formula (1). In the general formula (1), a ring I and a ring II represent rings represented by the formula (1a) and the formula (1b), respectively, each of which are fused to an adjacent ring. X's each represent nitrogen or C—Y and at least one of X's represents nitrogen. Y's each represent hydrogen, an alkyl group, a cycloalkyl group, or an aromatic group. A represents an alkyl group, a cycloalkyl group, or an aromatic group. At least one of Y and A represents an alkyl group or a cycloalkyl group. R's each represent hydrogen, an alkyl group, a cycloalkyl group, an aromatic hydrocarbon group, or an aromatic heterocyclic group. | 2013-08-15 |
20130207098 | SOFT MATERIAL WAFER BONDING AND METHOD OF BONDING - A semiconductor device including a first wafer assembly having a first substrate and a first oxide layer over the first substrate. The semiconductor device further includes a second wafer assembly having a second substrate and a second oxide layer over the second substrate. The first oxide layer and the second oxide layer are bonded together by van der Waals bonds or covalent bonds. A method of bonding a first wafer assembly and a second wafer assembly including forming a first oxide layer over a first substrate. The method further includes forming a second oxide layer over a second wafer assembly. The method further includes forming van der Waals bonds or covalent bonds between the first oxide layer and the second oxide layer. | 2013-08-15 |
20130207099 | DISPLAY APPARATUS - A display apparatus includes a driving substrate and an organic light emitting diode device. The driving substrate includes a display area, a non-display area, a substrate and a transparent driving element. The transparent driving element is disposed in the non-display area to form a transparent region. The organic light emitting diode device is disposed over the driving substrate and located in the display area to form a non-transparent region. | 2013-08-15 |
20130207100 | OXIDE TFT ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS USING THE SAME - Embodiments of the present invention provide an oxide TFT array substrate and a method for manufacturing the same, and an electronic device comprising the same. In the embodiment of the method, an active layer and a stop layer are sequentially formed on a gate insulating layer and are patterned twice by a single-step continuous etch method. The embodiments of the present invention can avoid damages upon the surface and characteristics of an oxide semiconductor film during the processes such as removal, cleaning and the like, so the characteristics and yield of products can be effectively enhanced, and the costs for research and preparation are reduced. | 2013-08-15 |
20130207101 | SEMICONDUCTOR DEVICE - A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer. | 2013-08-15 |
20130207102 | SEMICONDUCTOR DEVICE - A transistor using an oxide semiconductor film is provided, the transistor having a small parasitic capacitance and including a back-gate electrode with a high controllability of threshold voltage. In the transistor using an oxide semiconductor film, the back-gate electrode overlaps with a drain electrode and does not overlap with a source electrode. By providing the back-gate electrode so as to overlap with the drain electrode and not to overlap with the source electrode, the operation speed of the transistor can be increased without decreasing the controllability of threshold voltage of the transistor as compared with the case where the back-gate electrode is provided so as to overlap with both the drain electrode and the source electrode. | 2013-08-15 |
20130207103 | THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF AND DISPLAY - An embodiment of the invention provides a manufacturing method of a thin-film transistor includes: providing a substrate; sequentially forming a gate electrode, a gate insulating layer, and an active layer on the substrate; forming an insulating metal oxide layer covering the active layer, wherein the insulating metal oxide layer including a metal oxide of a first metal; forming a metal layer covering the active layer, wherein the metal layer includes a second metal; forming a source electrode and a drain electrode on the metal layer with a trench separating therebetween; removing the metal layer exposed by the trench; and performing an annealing process to the metal layer and the insulating metal oxide layer, such that the metal layer reacts with the insulating metal oxide layer overlapping the metal layer to form a conducting composite metal oxide layer including the first metal and the second metal. | 2013-08-15 |
20130207104 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY DEVICE - An embodiment of the invention provides a manufacturing method of a thin film transistor including: providing a substrate; sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, and an active layer on the substrate; forming a conductive layer on the active layer and including a source electrode, a drain electrode, and a separating portion connecting therebetween; forming a first photoresist layer on the conductive layer and covering the source electrode and the drain electrode and exposing the separating portion; oxidizing the separating portion into an insulating metal oxide layer so as to electrically insulate the source electrode from the drain electrode; and removing the first photoresist layer. | 2013-08-15 |
20130207105 | Controlled Localized Defect Paths for Resistive Memories - Controlled localized defect paths for resistive memories are described, including a method for forming controlled localized defect paths including forming a first electrode forming a metal oxide layer on the first electrode, masking the metal oxide to create exposed regions and concealed regions of a surface of the metal oxide, and altering the exposed regions of the metal oxide to create localized defect paths beneath the exposed regions. | 2013-08-15 |
20130207106 | AMORPHOUS OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR USING THE SAME - There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×10 | 2013-08-15 |
20130207107 | METHODS OF OF IMPROVING BUMP ALLOCATION FOR SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES WITH IMPROVED BUMP ALLOCATION - In a method of improving bump allocation for a semiconductor device and a semiconductor device with improved bump allocation, a predetermined signal bump is surrounded with at least three bumps, each being a ground bump or a paired differential signal bump. | 2013-08-15 |
20130207108 | Critical Dimension and Pattern Recognition Structures for Devices Manufactured Using Double Patterning Techniques - An illustrative test structure is disclosed herein that includes a plurality of first line features and a plurality of second line features. In this embodiment, each of the second line features have first and second opposing ends and the first and second line features are arranged in a grating pattern such that the first ends of the first line features are aligned to define a first side of the grating structure and the second ends of the first features are aligned to define a second side of the grating structure that is opposite the first side of the grating structure. The first end of the second line features has a first end that extends beyond the first side of the grating structure while the second end of the second line features has a first end that extends beyond the second side of the grating structure. | 2013-08-15 |
20130207109 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes providing a substrate upon which the semiconductor device is to be disposed, heating the substrate to a first temperature that exceeds at least one of a softening point or glass transition temperature of the substrate, and depositing a polysilicon layer onto the substrate. A semiconductor device includes a substrate having at least one of a softening point, T | 2013-08-15 |
20130207110 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A method of fabricating a thin film transistor includes sequentially forming a first metal layer on a substrate and a second metal layer of copper on the first metal layer; performing a plasma process to form a copper nitride layer on the second metal layer; patterning the copper nitride layer, the second metal layer and the first metal layer to form a gate electrode; forming a first gate insulating layer of silicon nitride on the substrate including the gate electrode; forming a second gate insulating layer of silicon oxide on the first gate insulating layer; forming a semiconductor layer on the second gate insulating layer formed of an oxide semiconductor material; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode spaced apart from the drain electrode. | 2013-08-15 |
20130207111 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a transistor with stable electric characteristics and little signal delay due to wiring resistance, used in a semiconductor device including an oxide semiconductor film. A semiconductor device including the transistor is provided. A high-performance display device including the transistor is provided. | 2013-08-15 |
20130207112 | SEMICONDUCTOR DEVICE - A semiconductor device having a novel structure is provided in which a transistor including an oxide semiconductor and a transistor including a semiconductor material which is not an oxide semiconductor are stacked. Further, a semiconductor device in which a semiconductor element and a capacitor are formed efficiently is provided. In a semiconductor device, a first semiconductor element layer including a transistor formed using a semiconductor material which is not an oxide semiconductor, such as silicon, and a second semiconductor element layer including a transistor formed using an oxide semiconductor are stacked. A capacitor is formed using a wiring layer, or a conductive film or an insulating film which is in the same layer as a conductive film or an insulating film of the second semiconductor element layer. | 2013-08-15 |
20130207113 | ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE FOR AN ACTIVE ARRAY SUBSTRATE - Disclosed herein is an electrostatic discharge protection structure which includes a signal line, a thin-film transistor and a shunt wire. The thin-film transistor includes a gate electrode, a metal-oxide semiconductor layer, a source electrode and a drain electrode. The first metal-oxide semiconductor layer is disposed above the first gate electrode. The metal-oxide semiconductor layer has a channel region characterized in having a width/length ratio of less than 1. The source electrode is equipotentially connected to the gate electrode. The shunt wire is electrically connected to the drain electrode. When the signal line receives a voltage surge of greater than a predetermined magnitude, the voltage surge is shunted through the thin-film transistor to the shunt wire. | 2013-08-15 |
20130207114 | ACTIVE MATRIX SUBSTRATE AND DISPLAY PANEL - An active matrix substrate ( | 2013-08-15 |
20130207115 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF - A semiconductor device ( | 2013-08-15 |
20130207116 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode ( | 2013-08-15 |
20130207117 | Organic Light Emitting Diode Display - An organic light emitting diode display includes: first gate wires provided on a substrate with a first insulation layer therebetween and extended in a first direction; second gate wires provided on a second insulation layer above the first insulation layer and extended in the first direction; data wires provided on a third insulation layer above the second insulation layer and extended in a second direction crossing the first direction; a pixel circuit connected to the first gate wires, the second gate wires, and the data wires; and an organic light emitting diode connected to the pixel circuit. | 2013-08-15 |
20130207118 | LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - The present invention discloses an LED and its fabrication method. The LED comprises: a substrate; an epitaxial layer, an active layer and a capping layer arranged on the substrate in sequence; wherein a plurality of bifocal microlens structures are formed on the surface of the substrate away from the epitaxial layer. When the light emitted from the active layer passes through the surfaces of the bifocal microlens structures, the incident angle is always smaller than the critical angle of total reflection, thus preventing total reflection and making sure that most of the light pass through the surfaces of the bifocal microlens structures, in this way improving external quantum efficiency of the LED, avoiding the rise of the internal temperature of the LED and improving the performance of the LED. | 2013-08-15 |
20130207119 | LOW-DEFECT DENSITY GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS - A low-defect gallium nitride structure including a first gallium nitride layer comprising a plurality of gallium nitride columns etched into the first gallium nitride layer and a first dislocation density; and a second gallium nitride layer that extends over the gallium nitride columns and comprises a second dislocation density, wherein the second dislocation density may be lower than the first dislocation density. In addition, a method for fabricating a gallium nitride semiconductor layer that includes masking an underlying gallium nitride layer with a mask that comprises an array of columns and growing the underlying gallium nitride layer through the columns and onto said mask using metal-organic chemical vapor deposition pendeo-epitaxy to thereby form a pendeo-epitaxial gallium nitride layer coalesced on said mask to form a continuous pendeo-epitaxial monocrystalline gallium nitride semiconductor layer. | 2013-08-15 |
20130207120 | Power Device with Solderable Front Metal - Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson. | 2013-08-15 |
20130207121 | POWER CONVERSION DEVICE - A power conversion device includes a power conversion semiconductor element having an electrode, an electrode conductor electrically connected to the electrode of the power conversion semiconductor element and including a side face and an upper end portion having a substantially flat upper end face, and a seal material formed of resin to cover the power conversion semiconductor element and the side face of the electrode conductor. The substantially flat upper end face of the electrode conductor is exposed from an upper surface of the seal material, and the upper end portion of the electrode conductor having the substantially flat upper end face has a projecting portion projecting sideward. | 2013-08-15 |
20130207122 | METHOD FOR FABRICATING FINFETS AND SEMICONDUCTOR STRUCTURE FABRICATED USING THE METHOD - A method for fabricating FinFETs is described. A semiconductor substrate is patterned to form odd fins. Spacers are formed on the substrate and on the sidewalls of the odd fins, wherein each spacer has a substantially vertical sidewall. Even fins are then formed on the substrate between the spacers. A semiconductor structure for forming FinFETs is also described, which is fabricated using the above method. | 2013-08-15 |
20130207123 | HIGH CURRENT DENSITY POWER MODULE - A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The switch modules comprise multiple transistors and diodes that are interconnected to facilitate switching power to a load. In one embodiment, at least one of the switch modules supports a current density of at least 10 amperes per cm | 2013-08-15 |
20130207124 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A first region of a silicon carbide layer constitutes a first surface, and is of a first conductivity type. A second region is provided on the first region, and is of a second conductivity type. A third region is provided on the second region, and is of the first conductivity type. A fourth region is provided in the first region, located away from each of the first surface and the second region, and is of the second conductivity type. A gate insulation film is provided on the second region so as to connect the first region with the third region. A gate electrode is provided on the gate insulation film. A first electrode is provided on the first region. A second electrode is provided on the third region. | 2013-08-15 |
20130207125 | ADHESION TYPE AREA SENSOR AND DISPLAY DEVICE HAVING ADHESION TYPE AREA SENSOR - A lightweight, thin, small size semiconductor device is provided. A pixel has a display portion, and a light receiving portion comprising a photodiode. A transistor is used with the semiconductor device for controlling the operation of the display portion and the light receiving portion. | 2013-08-15 |
20130207126 | OPTOELECTRONIC APPARATUSES AND METHODS FOR MANUFACTURING OPTOELECTRONIC APPARATUSES - A method for manufacturing an optoelectronic apparatus includes attaching bottom surfaces of first and second packaged optoelectronic semiconductor devices (POSDs) to a carrier substrate (e.g., a tape) so that there is a space between the first and second POSDs. An opaque molding compound is molded around portions of the first and second POSDs attached to the carrier substrate, so that peripheral surfaces of the first POSD and the second POSD are surrounded by the opaque molding compound, the space between the first and second POSDs is filled with the opaque molding compound, and the first and second POSDs are attached to one another by the opaque molding compound. The carrier substrate is thereafter removed so that electrical contacts on the bottom surfaces of the first and second POSDs are exposed. A window for each of the POSDs is formed during the molding process or thereafter. | 2013-08-15 |
20130207127 | Apparatus and Method for Optical Communications - An integrated circuit package includes a substrate having a recess formed along at least a portion of a perimeter of the substrate, and an optical die having opto-electric circuitry, the optical die coupled to the substrate such that a portion of the optical die with the opto-electric circuitry overhangs the recess. The integrated circuit package also includes an optical unit disposed in the recess such that optical signals emitted by the opto-electric circuitry are reflected away from the substrate and incident optical signals are reflected onto the opto-electric circuitry. | 2013-08-15 |
20130207128 | LIGHT-EMITTING DIODE LIGHT MODULE FREE OF JUMPER WIRES - An LED light module free of jumper wires has a substrate and multiple LED chips. The substrate has a positive side circuit, a negative side circuit, multiple first chip connection portions and multiple second connection portions. The first and second chip connection portions are respectively connected to the positive and negative side circuits, and are juxtaposedly and alternately arranged on the substrate so that a width between each first chip connection portion and a corresponding second chip connection portion is smaller than a width of each LED chip. Each LED chip can be directly mounted on corresponding first and second chip connection portions to electrically connect to the positive and negative side circuits. Accordingly, jumper wires for connecting the LED chips and the positive and negative side circuits can be removed to avoid broken jumper wires occurring when the LED light module is shipped or assembled. | 2013-08-15 |
20130207129 | Light-Emitting Diode Area Light Module and Method for Packaging the Same - An LED area light module has a substrate and a circuit layer and a solder mask layer formed on the substrate. The solder mask layer partially covers the circuit layer for the partially exposed circuit layer to form multiple electrical contacts. An embankment wall is formed on the solder mask layer with a solder mask material for the electrical contacts to be located within the embankment wall. Multiple LED chips are mounted on the solder mask layer within the embankment wall and electrically connected to the electrical contacts. Optically-transmissive adhesive is filled and concentrated within the embankment wall and covers the LED chips by a tension force thereof, and forms an optically-transmissive adhesive layer after congealed. Accordingly, the LED area light module eliminates the use of thick frame made of metal or rubber and steps of manufacturing and mounting the frame to simplify the packaging processes. | 2013-08-15 |
20130207130 | LIGHT EMITTER DEVICES HAVING IMPROVED LIGHT OUTPUT AND RELATED METHODS - Light emitter devices having improved light output and related methods are disclosed. In one embodiment, light emitter devices can include a light emission area including one or more light emitting chips. The emitter device can further include a filling material at least partially disposed over the one or more light emitting chips. The filling material can include a first discrete layer of phosphor containing material and a second discrete layer of optically clear material. The device can optionally include more than one discrete layer of optically clear material. Each of the discrete layers of material can be separately dispensed within the light emission area such that the filling material is dispensed to a level that is substantially flush with an upper surface of the emitter device. | 2013-08-15 |
20130207131 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device including a substrate; a sealing sheet, which covers the substrate; a getter, which is interposed between at least a portion of the substrate and the sealing sheet; and an adhesive layer comprising an adhesive, which bonds the sealing sheet onto the substrate, wherein a getter-housing groove is in surfaces of the sealing sheet and the adhesive layer facing the substrate, and the getter is located in the getter-housing groove. | 2013-08-15 |
20130207132 | SOLID STATE WHITE LIGHT EMITTER AND DISPLAY USING SAME - A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix. | 2013-08-15 |
20130207133 | LIGHT-EMITTING DIODE - A light-emitting diode includes a carrier with a mounting face and includes a metallic basic body and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein an outer face of the metallic basic body includes the mounting face, the at least two light-emitting diode chips connect in parallel with one another, the at least two light-emitting diode chips are embedded in a reflective coating, the reflective coating covering the mounting face and side faces of the light-emitting diode chips, and the light-emitting diode chips protrude with their radiation exit surfaces out of the reflective coating, and the radiation exit surfaces face away from the carrier. | 2013-08-15 |
20130207134 | DISPLAY SUBSTRATE, DISPLAY PANEL HAVING THE DISPLAY SUBSTRATE, AND DISPLAY DEVICE HAVING THE DISPLAY PANEL - A display substrate includes a base substrate, a gate line portion, a data line portion, and a pixel portion. The base substrate includes a display area divided into first to fourth divided display areas, and first to fourth peripheral areas. The gate line portion includes a plurality of first gate lines, and a plurality of second gate lines. The data line portion includes a plurality of first data lines, and a plurality of second data lines. The pixel portion is disposed in the display area to be electrically connected to the first and second gate lines and the first and second data lines, respectively. | 2013-08-15 |
20130207135 | LIGHT EMITTING ELEMENT - A light emitting element is provided in this application, including a carrier; a conductive connecting structure disposed on the carrier and including a transparent conductive connecting layer; and an epitaxial stack structure disposed on the conductive connecting structure and including a plurality of electrically connected epitaxial light-emitting stacks, which substantially have the same width. | 2013-08-15 |
20130207136 | CHIP-ON-BOARD LEDS PACKAGE WITH DIFFERENT WAVELENGTHS - A chip-on-board LEDs package with different wavelengths is provided. The substrate has a conductive layer to connect LEDs with different wavelengths, color temperatures and packages. Therefore, the LEDs could be formed an illuminant matrix with different types connected thereof. Also, a lens is disposed on the illuminant matrix to protect the chip-on-board LEDs structure and enhance luminous efficiency. | 2013-08-15 |
20130207137 | COB-Typed LED Light Board - A COB-typed LED light board for providing mixing light includes a substrate and a plurality of COB light bodies. The COB light bodies, which are provided on a mounting surface of the substrate, emit light with two or more different spectrums. A space distance between the adjacent two LED chips is smaller than 20 mm and is larger than a width of a single LED chip, the outer surface of a glue body which does not contact the mounting surface is provided to contact external atmosphere, and a middle portion of the glue body, formed by cohesion, is higher than a periphery portion thereof, to thus have the COB light bodies with excellent heat dissipation and an even mixing light. | 2013-08-15 |
20130207138 | DISPLAY UNIT, METHOD OF MANUFACTURING SAME, ORGANIC LIGHT EMITTING UNIT, AND METHOD OF MANUFACTURING SAME - A display unit capable of being simply designed and manufactured by using more simplified light emitting device structure while capable of high definition display and display with superior color reproducibility and a manufacturing method thereof are provided. The display unit is a display, wherein a plurality of organic EL devices in which a function layer including a light emitting layer is sandwiched between a lower electrode made of a light reflective material and a semi-transmissive upper electrode, and which has a resonator structure in which light emitted in the light emitting layer is resonated using a space between the lower electrode and the upper electrode as a resonant section and is extracted from the upper electrode side are arranged on a substrate. In the respective organic EL devices, the function layer is made of an identical layer, and an optical distance of the resonant section is set to a value different from each other so that blue, green, or red wavelength region is resonated. | 2013-08-15 |
20130207139 | RADIATION-EMITTING COMPONENT AND METHOD FOR PRODUCING RADIATION-EMITTING COMPONENTS - A radiation-emitting component includes a semiconductor chip which has a first main surface, a second main surface on an opposite side from the first main surface and an active region that generates radiation; a carrier on which the semiconductor chip is fixed on the side of the second main surface; an output layer arranged on the first main surface of the semiconductor chip and forming a lateral output surface spaced apart from the semiconductor chip in a lateral direction, a recess tapering in a direction of the semiconductor chip being, formed in the output layer and deflecting radiation emerging from the first main surface during operation into the direction of the lateral output surface. | 2013-08-15 |
20130207140 | Semiconductor Optical Element Semiconductor Optical Module and Manufacturing Method Thereof - A semiconductor optical element comprises a substrate, an active layer lying in one direction over the substrate from which light exits using a side in the shorter direction among the four sides as an outgoing end, a buried layer provided over the substrate and covering two sides in the longitudinal direction among the four sides, a clad layer provided over the active layer and over the substrate existing on the extension line of the outgoing end of the active layer, a mirror which reflects light from the active layer provided on the extension line of the active layer, wherein the mirror is formed in the clad layer. | 2013-08-15 |
20130207141 | LIGHTING DEVICE INCLUDING MULTIPLE ENCAPSULANT MATERIAL LAYERS - A lighting device includes an electrically activated emitter, a first layer that contains a first encapsulant material, and a second layer that contains a second encapsulant material, with a textured interface between the first layer and the second layer. Additional layers including further encapsulant materials and/or lumiphoric materials may be provided. Multiple textured interfaces may be provided. Textured interfaces may be arranged as lenses, including Fresnel lenses. | 2013-08-15 |
20130207142 | LIGHT EMITTER DEVICES HAVING IMPROVED CHEMICAL AND PHYSICAL RESISTANCE AND RELATED METHODS - Light emitter devices having improved chemical and physical resistance and related methods are disclosed herein. In one embodiment, the light emitter device includes a light emission area with a cavity with one or more light emitting chips disposed within the cavity. The device can further include a filling material at least partially disposed over the one or more light emitting chips. The filling material can include a first discrete layer of phosphor containing material and a second discrete clear barrier layer. The clear barrier layer can include a layer of glass. | 2013-08-15 |
20130207143 | PATTERNED SUBSTRATE OF LIGHT EMITTING SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A patterned substrate of a light emitting semiconductor device has a plurality of convex members on a top surface thereof. Each convex member has a substantially flat top surface and a plurality of convex arc-shaped sidewalls. | 2013-08-15 |
20130207144 | COMPONENT AND METHOD FOR PRODUCING A COMPONENT - A component with an optoelectronic semiconductor chip fixed to a connection carrier by a bonding layer and embedded in an encapsulation, wherein a decoupling layer is arranged at least in places between the bonding layer and the encapsulation. | 2013-08-15 |
20130207145 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes a carrier with a carrier top, at least one optoelectronic semiconductor chip mounted on the carrier top and having a radiation-transmissive substrate and a semiconductor layer sequence which includes at least one active layer that generates electromagnetic radiation, and a reflective potting material, wherein, starting from the carrier top, the potting material surrounds the semiconductor chip in a lateral direction at least up to half the height of the substrate. | 2013-08-15 |
20130207146 | LIGHT-EMITTING DEVICE - There is realized a light-emitting device that emits, with high efficiency, white light with excellent color rendering index in a lamp color region. A light-emitting device ( | 2013-08-15 |
20130207147 | UV LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present disclosure provides a UV light emitting diode and a method of manufacturing the same. The UV light emitting diode includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer sequentially formed on a substrate, an electrode formed on the second conductive type semiconductor layer, and an opening formed by removing at least portions of the first conductive type semiconductor layer, the active layer, the second conductive type semiconductor layer, the reflective structure and the transparent electrode to expose a portion of the first conductive type semiconductor layer therethrough. In the UV light emitting diode, UV light is emitted from the active layer, passes through the opening, and then travels outside. | 2013-08-15 |
20130207148 | RADIATION-EMITTING COMPONENT WITH A CONVERTER MATERIAL, WITH A THERMALLY CONDUCTIVE CONTACT AND METHOD FOR THE PRODUCTION THEREOF - A radiation-emitting component includes:
| 2013-08-15 |
20130207149 | SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING A PHOTONIC CRYSTAL PATTERN FORMED THEREON, AND METHOD FOR MANUFACTURING SAME - The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes. | 2013-08-15 |
20130207150 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device of the present disclosure includes: a semiconductor multilayer structure which includes an active layer that is made of a nitride semiconductor, a principal surface of the nitride semiconductor being a semi-polar plane or a non-polar plane and which has recessed/elevated surfaces including at least either of recessed portions and elevated portions; an electrode covering a side of the semiconductor multilayer structure at which the recessed/elevated surfaces is provided, the electrode being configured to reflect at least part of light emitted from the active layer; and a birefringent substrate provided on a side of the semiconductor multilayer structure which is opposite to the recessed/elevated surfaces, the birefringent substrate being configured to transmit light emitted from the active layer and light reflected by the electrode. | 2013-08-15 |
20130207151 | Optoelectronic Semiconductor Component And Method For Producing Same - An optoelectronic semiconductor component includes a light source, a housing and electrical connections, wherein the light source has a chip which emits primary radiation in the UV or blue region with a peak wavelength in particular in the region of 300 to 490 nm, wherein the primary radiation is partially or completely converted into radiation of a different wavelength by a previously applied conversion element, characterized in that the conversion element has a translucent or transparent substrate, which is manufactured from ceramic or glass ceramic, wherein a glass matrix is applied to the substrate, with a phosphor being embedded in said glass matrix. | 2013-08-15 |
20130207152 | LIGHT-EMITTING DEVICE - A light-emitting device includes a light-emitting element mounted on a lead frame, and a sealing material sealing the light-emitting element and having a thickness of not more than 1 mm and including a silicone resin as a main component. The sealing material includes a first gas barrier layer that a physical property value obtained by dividing a difference between a value of an average spin-spin relaxation time of | 2013-08-15 |
20130207153 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a first conductivity type semiconductor layer; a light emission layer; a second conductivity type semiconductor layer; a conductive portion of a first polarity electrically connected to the first conductivity type semiconductor layer; and a conductive portion of a second polarity electrically connected to the second conductivity type semiconductor layer. At least one of the conductive portion of the first polarity and the conductive portion of the second polarity includes a plurality of separated electrode portions arranged on a light emission surface. The closer the positions of the separated electrode portions are to a center point of the light emission surface, the separated electrode portions are provided sparsely, and the farther the positions of the separated electrode portions are from a center point of the light emission surface, the separated electrode portions are provided densely. | 2013-08-15 |
20130207154 | OPTOELECTRONIC COMPONENT - An optoelectronic component has a semiconductor body including an epitaxial layer sequence, and a carrier substrate consisting of a semiconductor material connected to the semiconductor body by a solder layer, and through-connections. The carrier substrate includes a surface doping zone extending along a first main surface facing the semiconductor body. The surface doping zone includes a p-conductive region and an n-conductive region adjacent thereto, between which regions a pn-junction is formed. The n-conductive region electrically connects to a p-doped region of the epitaxial layer sequence via a first sub-region of the solder layer, and the p-conductive region electrically connects to an n-doped region of the epitaxial layer sequence via a second sub-region of the solder layer. | 2013-08-15 |
20130207155 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT - A method of producing an optoelectronic semiconductor component includes arranging a semiconductor layer stack with a pn-junction on a substrate, lateral patterning of the semiconductor layer sack into a plurality of pairs of first semiconductor bodies and second semiconductor bodies spaced from one another in a lateral direction, detaching the substrate from the pairs of first semiconductor bodies and second semiconductor bodies, applying at least one pair of first semiconductor bodies and second semiconductor bodies to a connection carrier including electrical connection points and/or at least one conductor track, and electrically connecting the semiconductor bodies of a pair of first semiconductor bodies and second semiconductor bodies by the connection points and/or the at least one conductor track such that the pn-junction of the first semiconductor body connects in antiparallel to the pn-junction of the second semiconductor body. | 2013-08-15 |
20130207156 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS - An optoelectronic semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, the semiconductor body arranged on the carrier wherein an emission region and a detection region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and provided in the emission region to generate radiation; the first semiconductor layer is arranged on the side of the active region facing away from the carrier; and the emission region has a recess extending through the active region. | 2013-08-15 |
20130207157 | REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE - An exemplary reverse-conducting power semiconductor device with a wafer having a first main side and a second main side parallel to the first main side. The device includes a plurality of diode cells and a plurality of IGCT cells, each IGCT cell including between the first and second main side: a first anode electrode, a first anode layer of a first conductivity type on the first anode electrode, a buffer layer of a second conductivity type on the first anode layer, a drift layer of the second conductivity type on the buffer layer, a base layer of the first conductivity type on the drift layer, a first cathode layer of a second conductivity type on the base layer, and a cathode electrode on the first cathode layer. A mixed part includes the second anode layers of the diode cells alternating with the first cathode layers of the IGCT cells. | 2013-08-15 |
20130207158 | SEMICONDUCTOR DEVICE - To improve a manufacture yield of semiconductor devices each including an IGBT, an active region defined by an insulating film and where an element of an IGBT is formed has a first long side and a second long side spaced at a predetermined distance apart from each other and extended in a first direction in a planar view. One end of the first long side has a first short side forming a first angle with the first long side, and one end of the second long side has a second short side forming a second angle with the second long side. The other end of the first long side has a third short side forming a third angle with the first long side, and the other end of the second long side has a fourth short side forming a fourth angle with the second long side. The first angle, the second angle, the third angle, and the fourth angle are in a range larger than 90 degrees and smaller than 180 degrees. | 2013-08-15 |
20130207159 | BIPOLAR NON-PUNCH-THROUGH POWER SEMICONDUCTOR DEVICE - An exemplary bipolar non-punch-through power semiconductor device includes a semiconductor wafer and a first electrical contact on a first main side and a second electrical contact on a second main side. The wafer has an inner region with a wafer thickness and a termination region that surrounds the inner region, such that the wafer thickness is reduced at least on the first main side with a negative bevel. The semiconductor wafer has at least a two-layer structure with layers of different conductivity types, which can include a drift layer of a first conductivity type, a first layer of a second conductivity type at a first layer depth and directly connected to the drift layer on the first main side and contacting the first electrical contact, and a second layer of the second conductivity type arranged in the termination region on the first main side up to a second layer depth. | 2013-08-15 |
20130207160 | SEMICONDUCTOR LIGHT DETECTING ELEMENT - A semiconductor light detecting element includes: an InP substrate; and a semiconductor stacked structure on the InP substrate and including at least a light absorbing layer, wherein the light absorbing layer includes an InGaAsBi layer lattice-matched to the InP substrate. | 2013-08-15 |
20130207161 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device and a method for forming the same are provided. The semiconductor device comprises: a substrate ( | 2013-08-15 |
20130207162 | HIGH PERFORMANCE MULTI-FINGER STRAINED SILICON GERMANIUM CHANNEL PFET AND METHOD OF FABRICATION - A field effect transistor and method of fabrication are provided. The field effect transistor comprises a plurality of elongated uniaxially-strained SiGe regions disposed on a silicon substrate, oriented such that they are in parallel to the direction of flow of electrical carriers in the channel. The elongated uniaxially-strained SiGe regions are oriented perpendicular to, and traverse through the transistor gate. | 2013-08-15 |
20130207163 | Semiconductor Devices and Manufacturing Methods Thereof - Semiconductor devices and manufacturing methods thereof are disclosed. In one embodiment, a semiconductor device includes a workpiece with a first region having a plurality of first features and a second region having a plurality of second features proximate the first region. The first region and the second region share a patterning overlap region disposed between the first region and the second region. The patterning overlap region includes a residue feature with an aspect ratio of about 4 or less. | 2013-08-15 |