29th week of 2015 patent applcation highlights part 44 |
Patent application number | Title | Published |
20150200302 | FIN FIELD EFFECT TRANSISTOR (FINFET) - A FinFET whose fin has an upper portion doped with a first conductivity type and a lower portion doped with a second conductivity type, and the junction between the upper portion and the lower portion acts as a diode. The FinFET further includes: at least one layer of high-k dielectric material (for example Si | 2015-07-16 |
20150200303 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - This semiconductor device ( | 2015-07-16 |
20150200304 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME,AND FABRICATING METHOD OF THE THIN FILM TRANSISTOR SUBSTRATE - A method of fabricating a thin-film transistor substrate includes disposing an oxide semiconductor layer on an insulating substrate, performing a thermal treatment process to the oxide semiconductor layer, providing an alignment mark, a source electrode, a drain electrode, and an oxide semiconductor pattern, after the thermal treatment process, providing a gate electrode, after the thermal treatment process, and providing a pixel electrode connected to the drain electrode. | 2015-07-16 |
20150200305 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A semiconductor device of one embodiment of the present invention includes a semiconductor, an insulator, a first conductor, and a second conductor. In the semiconductor device, a top surface of the semiconductor has a region in contact with the insulator; a side surface of the semiconductor has a region in contact with the insulator; the first conductor has a first region overlapping with the semiconductor with the insulator positioned therebetween; the first region has a region in contact with the top surface of the semiconductor and a region in contact with the side surface of the semiconductor; the second conductor has a second region in contact with the semiconductor; and the first region and the second region do not overlap with each other. | 2015-07-16 |
20150200306 | Non-Volatile Memory And Manufacturing Method Of Same - A non-volatile memory includes a substrate, a charge trapping structure disposed on the substrate, a buffer layer disposed on the charge trapping structure, and a plurality of conductive layers disposed on the buffer layer. | 2015-07-16 |
20150200307 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A tunnel insulating film is provided on the semiconductor substrate. A charge accumulation layer is provided on the tunnel insulating film. An intermediate dielectric film is provided on the charge accumulation layer. A control gate electrode is formed on the intermediate dielectric film. The intermediate dielectric film includes a laminated film of silicon oxide films of multiple layers and silicon nitride films of at least one layer, and a silicon oxynitride film provided between adjacent ones of the silicon oxide films and the silicon nitride films. | 2015-07-16 |
20150200308 | Field Effect Transistor Constructions And Memory Arrays - In some embodiments, a transistor includes a stack having a bottom source/drain region, a first insulative material, a conductive gate, a second insulative material, and a top source/drain region. The stack has a vertical sidewall with a bottom portion along the bottom source/drain region, a middle portion along the conductive gate, and a top portion along the top source/drain region. Third insulative material is along the middle portion of the vertical sidewall. A channel region material is along the third insulative material. The channel region material is directly against the top and bottom portions of the vertical sidewall. The channel region material has a thickness within a range of from greater than about 3 Å to less than or equal to about 10 Å; and/or has a thickness of from 1 monolayer to 7 monolayers. | 2015-07-16 |
20150200309 | JUNCTION FIELD EFFECT TRANSISTOR - In a high voltage JFET, a p-floating region is provided in the surface layer of an n-drift region, thereby increasing the resistance R of the n-drift region and minimizing the voltage divided at a pn junction. This makes it possible to improve ESD capacity without increasing device size and without making the cutoff current smaller. | 2015-07-16 |
20150200310 | Buss Bar Strip - A buss bar strip for mounting to a solar panel to electrically connect to a series of electrical lines extending from solar cells. The buss bar strip can include a thin elongate flat flexible strip of insulative material having a longitudinal length. A predetermined pattern of elongate conductors can be longitudinally disposed on the insulative strip in at least two rows along the longitudinal length and electrically isolated from each other. Each conductor can have a predetermined position, length, and spacing from each other on the insulative strip for laterally electrically connecting to selected electrical lines from the solar cells at lateral electrical connection points located along the length of the conductor on exposed surfaces on the conductor. | 2015-07-16 |
20150200311 | MONOLITHICALLY INTEGRATED THIN-FILM DEVICE WITH A SOLAR CELL, AN INTEGRATED BATTERY, AND A CONTROLLER - A thin-film monolithically integrated solar module with a solar cell, an integrated energy storage device, and a controller may be provided. It may comprise a thin-film solar cell, having at least one solar diode, on a transparent substrate, a thin-film energy storage device, and an electronic controller comprising at least one thin-film transistor above the thin-film energy storage device. The electronic controller may be electrically connected to the thin-film solar cell and the thin-film energy storage device by vias. The named functional units may build a monolithically integrated device on one substrate. | 2015-07-16 |
20150200312 | Semiconductor Film and Semiconductor Element - The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element. | 2015-07-16 |
20150200313 | DISCONTINUOUS EMITTER AND BASE ISLANDS FOR BACK CONTACT SOLAR CELLS - Back contact solar cells having a discontinuous emitter comprising a plurality of emitter islands are provided. The back contact solar cell comprises a semiconductor layer with a background base doping and having a sunlight-receiving frontside and a backside opposite said sunlight-receiving frontside. An emitter layer having a doping opposite said semiconductor layer background doping is positioned on the semiconductor layer backside. A trench isolation pattern partitions the emitter layer and semiconductor layer into a plurality of discontinuous emitter regions on the semiconductor layer backside. At least one base island region contacting the semiconductor layer is positioned within each of the discontinuous emitter regions on the semiconductor layer backside. | 2015-07-16 |
20150200314 | BACK SIDE ILLUMINATED SINGLE PHOTON AVALANCHE DIODE IMAGING SENSOR WITH HIGH SHORT WAVELENGTH DETECTION EFFICIENCY - A single photon avalanche diode (SPAD) includes an n doped epitaxial layer disposed in a first semiconductor layer. A p doped epitaxial layer is above the n doped epitaxial layer on a back side of the first semiconductor layer. A multiplication junction is defined at an interface between the n doped epitaxial layer and the p doped epitaxial layer. A multiplication junction is reversed biased above a breakdown voltage such that a photon received through the back side of the first semiconductor layer triggers an avalanche multiplication process in the multiplication junction. A p− doped guard ring region is implanted in the n doped epitaxial layer surrounding the multiplication junction. | 2015-07-16 |
20150200315 | ELECTRONIC MODULE - An electronic module is provided which includes an electronic device in which an electronic element is provided on a flexible substrate that does not transmit water vapor, an edge sealant provided at a peripheral edge of the flexible substrate of the electronic device, and a water vapor barrier film provided so as to cover a region surrounded by the edge sealant. When a square root of twice a diffusion coefficient of the edge sealant is denoted by K, K is not greater than 0.1 cm/√h. The water vapor barrier film includes a support member made of a transparent resin and at least one inorganic layer formed on the support member, and the support member is disposed on a side on which the edge sealant is located. | 2015-07-16 |
20150200316 | SOLAR CELLS HAVING NANOWIRE TITANIUM OXIDE AND/OR SILICON CARBIDE CORES AND GRAPHENE EXTERIORS - An apparatus comprising a plurality of solar cells that each comprise a nanowire titanium oxide core having graphene disposed thereon. By one approach this plurality of solar cells can comprise, at least in part, a titanium foil having the plurality of solar cells disposed thereon wherein at least a majority of the solar cells are aligned substantially parallel to one another and substantially perpendicular to the titanium foil. Such a plurality of solar cells can be disposed between a source of light and another modality of solar energy conversion such that both the solar cells and the another modality of solar energy conversion generate electricity using a same source of light. | 2015-07-16 |
20150200317 | Process For The Manufacture Of A Multilayer Silicone Structure - The present invention is directed to a process for the manufacture of a multilayer silicone structure of cured silicone elastomer layers wherein the compositions of each of the curable silicone elastomers are chosen such as to provide excellent layer-to-layer adhesion of the said cured silicone elastomer layers, that is, the layers do not suffer form cohesive failure. The multilayer silicone structures may be used for example for the manufacture of electronic devices, coatings, shaped molded articles, laminates etc. | 2015-07-16 |
20150200318 | COMBINATION SIGNAL MARKER PANEL AND SOLAR PANEL - A combination signal marker panel and solar panel and methods are disclosed. The combination signal marker panel and solar panel includes a signal marker that is sewed or otherwise fastened to a flexible solar panel. The solar panel is modular and configurable to provide any output voltage. Namely, the solar panel can include any number of solar modules configured in series, configured in parallel, or configured in any combination of series and parallel arrangements. The combination signal marker panel and solar panel can be used to harvest solar energy while simultaneously marking the user's position. | 2015-07-16 |
20150200319 | MULTILAYER SHEET, BACKSHEET FOR SOLAR CELL AND SOLAR CELL MODULE - Provided are a multilayer sheet, a backsheet for solar cell, and a solar cell module superior in weather resistance, heat resistance, moisture resistance, flame resistance, and also interlayer adhesion. A multilayer sheet | 2015-07-16 |
20150200320 | PHOTOVOLTAIC DEVICE WITH FIBER ARRAY FOR SUN TRACKING - Disclosed is a photovoltaic device that includes a solar cell on a light transmissive substrate in the form of an array of equal diameter optical fibers laid adjacent to each other in the transversal direction of the fibers. With such an arrangement, light harvesting at high angles is improved by 30%. | 2015-07-16 |
20150200321 | DIRECTLY BONDED, LATTICE-MISMATCHED SEMICONDUCTOR DEVICE - A semiconductor device may include a first subassembly and a second subassembly. The first subassembly may include a first bonding layer. The second subassembly may include a second substrate and a second bonding layer directly bonded to the first bonding layer. The first bonding layer and the second bonding layer may be lattice-mismatched to one another. At least one of the following may be selected: the first bonding layer is lattice-mismatched to the first substrate, and the second bonding layer is lattice-mismatched to the second substrate. | 2015-07-16 |
20150200322 | Semiconductor Heterojunction Photovoltaic Solar Cell with a Charge Blocking Layer - A heterojunction photovoltaic device comprises a chemically-doped n-type semiconductor layer, a charge-blocking layer that can have a compositionally graded configuration, and a chemically-doped p-type semiconductor layer. The charge-blocking layer can significantly reduce interfacial recombination of electrons and holes, increase open circuit voltage (Voc), and increase overall photovoltaic device efficiency. | 2015-07-16 |
20150200323 | RADIATION DETECTOR - In an X-ray strip detector, at least one joining semiconductor film are formed on surface of a sensitive semiconductor film, on the part of X-strips and Y-strips, that is sensitive to incident X-rays to generate electric charge, and on at least an entire sensitive region of a conversion film. The joining semiconductor film has higher resistance value than resistance value of the sensitive semiconductor film. Accordingly, when the electric charge generated in the sensitive semiconductor film are collected in the X-strips and the Y-strips, movement of the electric charge into other adjacent strip electrodes is avoidable. Consequently, crosstalk can be suppressed that the electric charge leak to the adjacent strip electrodes. | 2015-07-16 |
20150200324 | CONDUCTOR CONNECTION MEMBER, CONNECTION STRUCTURE, AND SOLAR CELL MODULE - The electric conductor connecting member of this invention comprises a metal foil having a roughened surface on at least one main side, and an adhesive layer formed on the roughened surface of the metal foil. | 2015-07-16 |
20150200325 | MICROCRYSTALLINE SILICON THIN FILM SOLAR CELL AND THE MANUFACTURING METHOD THEREOF - The present invention relates to a microcrystalline silicon thin film solar cell and the manufacturing method thereof, using which not only the crystallinity of a microcrystalline silicon thin film that is to be formed by the manufacturing method can be controlled and adjusted at will and the defects in the microcrystalline silicon thin film can be fixed, but also the device characteristic degradation due to chamber contamination happening in the manufacturing process, such as plasma enhanced chemical vapor deposition (PECVD), can be eliminated effectively. | 2015-07-16 |
20150200326 | METHOD AND APPARATUS FOR INCREASING EFFICIENCY OF THIN FILM PHOTOVOLTAIC CELL - A method of fabricating a photovoltaic cell, and apparatus formed by the method, yields increased quantum efficiency. A back contact layer is formed above a substrate. An absorber layer is formed above the back contact layer. A buffer layer is formed above the absorber layer. A transparent conductive layer is formed above the buffer layer. A surface of the transparent conductive layer is treated with an acid to increase roughness of the surface. | 2015-07-16 |
20150200327 | SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS - A semiconductor light emitting device includes a substrate, a semiconductor laminate disposed on the substrate and divided to a plurality of light emitting cells with an isolation region, and a wiring unit electrically connecting the plurality of light emitting cells. A region of lateral surfaces of each of the light emitting cells in which the wiring unit is disposed has a slope gentler than slopes of other regions of the lateral surfaces of each of the light emitting cells. | 2015-07-16 |
20150200328 | OPTOELECTRONIC SEMICONDUCTOR BODY AND OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor body includes a semiconductor layer sequence having an active region that generates radiation, a first barrier region and a second barrier region, wherein the active region is arranged between the first barrier region and the second barrier region; and at least one charge carrier barrier layer is arranged in the first barrier region, said at least one charge carrier barrier layer being tensile-strained. | 2015-07-16 |
20150200329 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer, wherein the first conductive semiconductor layer comprises a first layer provided at the upper surface thereof with a notch, a second layer disposed on the first layer and a third layer disposed on the second layer, wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the notch. The light emitting device can reduce leakage current by dislocation and improve resistance to static electricity. | 2015-07-16 |
20150200330 | METHOD FOR FABRICATING TRIANGULAR PRISMATIC M-PLANE NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - When a belt-like nitride semiconductor stacking structure | 2015-07-16 |
20150200331 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF - A manufacturing method of a light-emitting device is disclosed. The method provides for patterning a semiconductor stack on a first substrate in order to form multiple light-emitting mesas. A second substrate is then bonded to the multiple light-emitting mesas and a reflective structure is formed on the first substrate. A metal layer is then applied on the reflective structure and the metal layer is patterned to form multiple metal mesas corresponding to the multiple light-emitting mesas, with a portion of the reflective structure being exposed. | 2015-07-16 |
20150200332 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. | 2015-07-16 |
20150200333 | LAMINATED SUBSTRATE, LIGHT-EMITTING DEVICE, AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE - A light-emitting device includes a transparent substrate, a light-emitting element arranged on or above one main surface of the transparent substrate, and a porous layer arranged on or above the other main surface of the transparent substrate, the porous layer being an organic material layer having a plurality of pores. Inner surfaces of some pores among the plurality of pores may be exposed at a main surface of the porous layer opposite to a side on which the transparent substrate lies. A gas may be present in the pores the inner surfaces of which are exposed. | 2015-07-16 |
20150200334 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers. | 2015-07-16 |
20150200335 | WAFER LEVEL CONTACT PAD SOLDER BUMPING FOR SURFACE MOUNT DEVICES WITH NON-PLANAR RECESSED CONTACTING SURFACES - This disclosure related to surface mount devices, such as light emitting devices, and methods of manufacture thereof, including recessed contact pads with protruding contact bumps. Embodiments according to the present disclosure include a light emitting device, wherein the device comprises at least a contact pad, such that the contact pad is recessed in relation to a surface of the device. Contact bumps are formed in contact with the contact pads, such that the contact bumps protrude beyond the surface and may contact a surface of a submount that the device is meant to be mounted to. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed. | 2015-07-16 |
20150200336 | WAFER LEVEL CONTACT PAD STANDOFFS WITH INTEGRATED REFLECTOR - This disclosure relates to surface mount devices, such as light emitting devices, and methods of manufacture thereof, including recessed contact pads in relation to a mount surface, such that contact bumps and a reflective material are disposed to form a planar mounting surface. Embodiments according to the present disclosure include a light emitting device, wherein the device comprises at a reflective layer, forming at least a portion of a mounting surface. The device also includes one or more contact pads on the device, such that the contact pads are recessed in relation to the reflective layer. Contact bumps are formed on the contact pads, protruding beyond the contact pads, wherein the contact bumps compose at least a portion of the mounting surface. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed. | 2015-07-16 |
20150200337 | WIRING SUBSTRATE AND SEMICONDUCTOR PACKAGE - A wiring substrate for a semiconductor device includes a heat spreader; a polyimide layer provided with through holes and provided on the heat spreader via an adhesion layer; through wirings formed to fill the through holes of the polyimide layer; a thermal diffusion wiring provided on the polyimide layer and is configured not to be electrically connected to the semiconductor device; an electrical connection wiring provided on the polyimide layer at a same plane with the thermal diffusion wiring and is configured to be electrically connected to the semiconductor device; and an insulating layer provided on the polyimide layer with a first open portion and a second open portion that expose the electrical connection wiring and the thermal diffusion wiring, respectively, the thermal diffusion wiring being formed to extend at an outer side of the second open portion and have a larger area than the electrical connection wiring. | 2015-07-16 |
20150200338 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A light emitting device is provide comprising a light emitting diode (LED) chip having a first main surface and a second main surface opposing the first main surface, and one or more side surfaces extending between the first main surface and second main surface. A plurality of electrodes is disposed on the first main surface. A wavelength conversion film is disposed on the second main surface. A mark is formed in the wavelength conversion film. The mark contains orientation information of the light emitting device, thereby enabling the light emitting device to be properly oriented on a receiving substrate. | 2015-07-16 |
20150200339 | Optoelectronic Semiconductor Component, Conversion-Medium Lamina and Method for Producing a Conversion-Medium Lamina - In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%. | 2015-07-16 |
20150200340 | LIGHT-EMITTING DEVICE - According to one embodiment, a light-emitting device includes a light-emitting element. A first film covers the light-emitting element. A fluorescent film is provided on the first film and partially covers a region above a light extraction face of the light-emitting element. A transparent section is provided on the fluorescent film. | 2015-07-16 |
20150200341 | MANUFACTURING METHOD FOR LIGHT-EMITTING DEVICE - A light-emitting device production method includes a positioning step of positioning, in a light-emitting element, a sealing member at least containing a silicone resin semi-cured at a room temperature (T | 2015-07-16 |
20150200342 | LIGHT EMITTING DEVICE HAVING MgO PYRAMID STRUCTURE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a light emitting device, the method including forming a semiconductor stack structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed therebetween, on a substrate, and forming a refractive index adjustment layer on the first semiconductor layer. The refractive index of the refractive index adjustment layer is smaller than the refractive index of the first semiconductor layer. Refractive indices of the first semiconductor layer and each layer disposed on the first semiconductor layer sequentially decrease in a direction extending away from the first semiconductor layer. | 2015-07-16 |
20150200343 | SUBSTRATE FOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME AND LIGHT SOURCE APPARATUS INCLUDING THE SUBSTRATE - A substrate for a light emitting diode (LED) and a method of manufacturing the substrate for the LED are provided. The substrate for the LED includes a conductive substrate which includes an upper surface including a first flat surface and a second flat surface stepped from the first flat surface, an insulating layer formed on the second flat surface, and an electrode layer spaced apart from the first flat surface and disposed on the insulating layer. | 2015-07-16 |
20150200344 | THERMAL GROUND PLANES AND LIGHT-EMITTING DIODES - Methods and systems for thermal management of one or more LEDs are disclosed. One or more LEDs may be coupled with an external layer of a thermal ground plane according to some embodiments described herein. For example, the one or more LEDs may be electrically coupled with a circuit carrier with one or more electrically conductive traces etched therein prior to coupling with the thermal ground plane. The thermal ground plane may be charged with a working fluid and/or hermetically sealed after being coupled with the LED. | 2015-07-16 |
20150200345 | THERMOELECTRIC MATERIALS BASED ON TETRAHEDRITE STRUCTURE FOR THERMOELECTRIC DEVICES - Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed. | 2015-07-16 |
20150200346 | N-TYPE THERMOELECTRIC MATERIAL - The n-type thermoelectric material has a composition represented by (A | 2015-07-16 |
20150200347 | CMOS Integrated Method for the Release of Thermopile Pixel on a Substrate by Using Anisotropic and Isotropic Etching - A method for manufacturing an imaging device is presented. The method starts with providing a wafer having a membrane with an opening bonded to a substrate. A photoresist layer is deposited over the membrane and wafer surface. A portion of the substrate back surface under a central part of the membrane is etched anisotropicly. A first region of the photoresist layer is removed, exposing an opening in the membrane, so that a first isotropic etching of the substrate is performed through the membrane opening. A second region of the photoresist layer is stripped, exposing a second membrane opening, providing access for a second isotropic etching of the substrate through the first and/or second membrane opening. | 2015-07-16 |
20150200348 | PHOTO DETECTOR - A photo detector is disclosed. The photo detector comprises a substrate, a flat metal layer, a dielectric layer, a patterned metal layer, and a semiconductor film. The flat metal layer is formed on the substrate. The dielectric layer is formed on the flat metal layer. The patterned metal layer is, formed on the dielectric layer. The patterned metal layer comprises a first interdigitated electrode and a second interdigitated electrode. The first interdigitated electrode is adjacent to the second interdigitated electrode. The semiconductor film is formed on the dielectric layer and covering the first interdigitated electrode and the second interdigitated electrode. When the semiconductor film receives an incident light, the flat metal layer and the patterned metal layer are operated in a localized surface plasmon mode or a waveguide mode for absorbing a certain narrow bandwidth radiation light of the incident light. Therefore, the electrical conductivity of the semiconductor film is changed and the optical energy absorbed by the photo detector is determined. | 2015-07-16 |
20150200349 | PIEZOELECTRIC ACTUATOR CONTROL FOR HIGH RATE OF OPERATION - Described herein are methods for controlling a piezoelectric element, for example, for use in a fuel injector, safely and efficiently at higher frequencies without causing damage to the fuel injector due to excessive heating. Methods incorporating features of the present invention can utilize waveform generation, waveform scaling and power amplification to drive a piezoelectric element. In some embodiments, various operating conditions are utilized to determine a scaling value which is compared to a target value to determine the level of scaling to be utilized with a generated waveform. | 2015-07-16 |
20150200350 | METHOD, APPARATUS AND SYSTEM FOR A TRANSFERABLE MICROMACHINED PIEZOELECTRIC TRANSDUCER ARRAY - Techniques and mechanisms to provide mechanical support for a micromachined piezoelectric transducer array. In an embodiment, a transducer array includes transducer elements each comprising a respective membrane portion and a respective supporting structure disposed on or around a periphery of that membrane portion. The transducer elements are initially formed on a sacrificial wafer, wherein supporting structures of the transducer elements facilitate subsequent removal of the sacrificial wafer and/or subsequent handling of the transducer elements. In another embodiment, a polymer layer is disposed on the transducer elements to provide for flexible support during such subsequent handling. | 2015-07-16 |
20150200351 | Flexible Piezoelectric Material, Production and Use Thereof - A composite piezoelectric material, manufacturing of the composite material and use of this composite material in piezoelectric components are disclosed. More particularly, a piezoelectric thick film materials or piezoelectric paint being a composite piezoelectric material including piezoelectric particles randomly dispersed within a polymer matrix are disclosed. A paste of composite piezoelectric material including a matrix of polymer having a relative permittivity≧3, normally ≧6, sintered piezoelectric particles having a relative permittivity in the range of 100-5000, normally in the range of 400-1000 and an average particle size between 1 and 50 μm, although the particles should be smaller than 1/10 of the final thickness of the final layer of piezoelectric material, and additives such as dispersing agents or thinner are disclosed where the final paste has a 0-3 connectivity pattern, a content of sintered piezoelectric particles between 15 and 75 vol %, normally between 40 and 60 vol %. | 2015-07-16 |
20150200352 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer made of a perovskite compound containing sodium, potassium, lithium, niobium and tantalum and bismuth manganate and electrodes for applying a voltage to the piezoelectric layer. | 2015-07-16 |
20150200353 | MAGNETIC TUNNEL JUNCTION BETWEEN METAL LAYERS OF A SEMICONDUCTOR DEVICE - Embodiments herein provide a magnetic tunnel junction (MTJ) formed between metal layers of a semiconductor device. Specifically, provided is an approach for forming the semiconductor device using only one or two masks, the approach comprising: forming a first metal layer in a dielectric layer of the semiconductor device, forming a bottom electrode layer over the first metal layer, forming a MTJ over the bottom electrode layer, forming a top electrode layer over the MTJ, patterning the top electrode layer and the MTJ with a first mask, and forming a second metal layer over the top electrode layer. Optionally, the bottom electrode layer may be patterned using a second mask. Furthermore, in another embodiment, an insulator layer (e.g., manganese) is formed atop the dielectric layer, wherein a top surface of the first metal layer remains exposed following formation of the insulator layer such that the bottom electrode layer contacts the top surface of the first metal layer. By forming the MJT between the metal layers using only one or two masks, the overall number of processing steps is reduced. | 2015-07-16 |
20150200354 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a first magnetic layer ( | 2015-07-16 |
20150200355 | FABRICATING A VIA - In one aspect, a method of fabricating a via in a hole of an isolation material includes depositing a first conductive material in the hole of the isolation material, removing a portion of the first conductive material deposited in the hole, depositing a second conductive material on the first conductive material in the hole and removing, using chemical-mechanical polishing (CMP), a portion of the second conductive material deposited on the first conductive material. | 2015-07-16 |
20150200356 | FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD OF DRIVING FERROMAGNETIC TUNNEL JUNCTION ELEMENT - In a tunnel junction element having a ferromagnetic free layer, an insulating layer and a ferromagnetic fixed layer, in order to reduce the current necessary for spin-transfer magnetization reversal operation in the tunnel junction element, the ferromagnetic free layer comprises first and second ferromagnetic layers, a nonmagnetic metal layer is provided between these ferromagnetic layers, the nonmagnetic metal layer is such that magnetic coupling is preserved between the first and second ferromagnetic layers, also such that there is no influence on the crystal growth of the first and second ferromagnetic layers, the first ferromagnetic layer and the second ferromagnetic layer are placed such that the first ferromagnetic layer is in contact with the insulating layer, and the second ferromagnetic layer has a smaller magnetization than the first ferromagnetic layer. | 2015-07-16 |
20150200357 | METHOD AND SYSTEM FOR PROVIDING MULTIPLE SELF-ALIGNED LOGIC CELLS IN A SINGLE STACK - A magnetic device including memory cells is provided. Each memory cell can store multiple bits corresponding to multiple data storage layers. Desired spacing(s) and desired junction angle(s) for the data storage layers are determined in each memory cell. The desired junction angle(s) and the desired spacing(s) correspond to spin transfer switching currents for the data storage layers having. A magnetoresistive stack including plurality of layers for each of the memory cells is deposited. The memory cells include the data storage layers. A data storage layer layers is spaced apart from nearest data storage layer(s) by a distance corresponding to the desired spacing(s). A mask corresponding to the memory cells is provided on the layers. The memory cells are defined such that each memory cell has the desired junction angle(s) and the desired spacing(s) and such that the data storage layers for each of the memory cells is self-aligned. | 2015-07-16 |
20150200358 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING VARIABLE RESISTIVE LAYER AND METHOD OF MANUFACTURING THE SAME - A semiconductor integrated circuit device includes a semiconductor substrate, a lower electrode disposed on the semiconductor substrate wherein an upper surface of the lower electrode has a recess, an interlayer insulating layer disposed on the semiconductor substrate and the lower electrode, the interlayer insulating layer including a variable resistive region exposing the upper surface of the lower electrode, and a variable resistive layer filled in the variable resistive region that contacts the recess of the lower electrode. The variable resistive layer is formed to have an increased width toward a top and a bottom thereof. | 2015-07-16 |
20150200359 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element. | 2015-07-16 |
20150200360 | GCIB-TREATED RESISTIVE DEVICE - The present disclosure includes GCIB-treated resistive devices, devices utilizing GCIB-treated resistive devices (e.g., as switches, memory cells), and methods for forming the GCIB-treated resistive devices. One method of forming a GCIB-treated resistive device includes forming a lower electrode, and forming an oxide material on the lower electrode. The oxide material is exposed to a gas cluster ion beam (GCIB) until a change in resistance of a first portion of the oxide material relative to the resistance of a second portion of the oxide material. An upper electrode is formed on the first portion. | 2015-07-16 |
20150200361 | Transition Metal Oxide Bilayers - Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen. | 2015-07-16 |
20150200362 | TWO TERMINAL RESISTIVE SWITCHING DEVICE STRUCTURE AND METHOD OF FABRICATING - A semiconductor device having a memory device includes a semiconductor substrate, a first dielectric layer disposed above the semiconductor substrate, a first adhesion layer disposed upon the first dielectric layer, a bottom wiring metal disposed upon the first adhesion layer, a first barrier layer disposed upon the bottom wiring metal, a resistive switching material disposed in electrical contact with the first barrier layer, wherein the resistive switching material comprises a silicon material having a plurality of defect regions, a conductive metal material disposed upon the resistive switching material, wherein the conductive metal material comprises a plurality of conductive metal particles, a second barrier layer disposed upon the conductive metal material, a top wiring metal disposed upon the second barrier layer, and wherein at least some of the plurality of conductive metal particles are removably disposed in defect regions from the plurality of defect regions in the resistive switching material. | 2015-07-16 |
20150200363 | RESISTIVE SWITCHING ELEMENT AND USE THEREOF - A bipolar resistive switching device (RSM device, FIG. | 2015-07-16 |
20150200364 | MEMORY CELL STRUCTURES - The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode, and a storage element between the first electrode and the electrode contact portion of the second electrode. | 2015-07-16 |
20150200365 | PHASE CHANGE MEMORY CELL - A phase change memory cell includes a first circuit and a second circuit. The first circuit includes a first electrode, a carbon nanotube wire and a second electrode electrically connected in series; wherein the first circuit is adapted to write data into the phase change memory cell or reset the phase change memory cell. The second circuit includes a third electrode, a phase change layer, the carbon nanotube wire, and the first electrode or the second electrode electrically connected in series, wherein the second circuit is adapted to read data from the phase change memory cell or reset the phase change memory cell, the carbon nanotube wire includes a bending portion, the third electrode is spaced from the bending portion, and the phase change layer covers the bending portion of the carbon nanotube wire. | 2015-07-16 |
20150200366 | MEMORY CELLS HAVING HEATERS WITH ANGLED SIDEWALLS - Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element. | 2015-07-16 |
20150200367 | METHOD FOR MAKING PHASE CHANGE MEMORY CELL - A method for making phase change memory cell includes following steps. A carbon nanotube wire is located on a surface of the substrate, wherein the carbon nanotube wire includes a first end and a second end opposite to the first end. A bending portion is formed by bending the carbon nanotube wire. A first electrode, a second electrode, and a third electrode are applied on the surface of the substrate, wherein the first electrode is electrically connected to the first end, the second electrode is electrically connected to the second end, and the third end is spaced from the bending portion of the carbon nanotube wire. A phase change layer is deposited to cover the bending structure and electrically connects to the third electrode. | 2015-07-16 |
20150200368 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING PHASE-CHANGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A semiconductor integrated circuit device including a phase-change structure and a method of manufacturing the same are provided. The method includes providing a semiconductor substrate including a lower electrode, sequentially stacking a plurality of phase-change material layers on the semiconductor substrate, and patterning the stacked plurality of phase-change material layers in a stepwise manner to form a phase-change structure. | 2015-07-16 |
20150200369 | LIGHT EMITTING COMPOUNDS - Claimed is a cyclometallated organometallic light emitting complex having two tridentate ligand portions sharing a central heterocycle “A” providing a binding-site for each of the two metals (formula I): Formula (I): A more illustrative embodiment is formula (XII): Characterizing for the invention is that either one of XI and X2 and either one of Y1 and Y2 is carbon. The dinuclear complexes are for use in OLEDs. | 2015-07-16 |
20150200370 | METHOD AND SYSTEM FOR DIVIDING A BARRIER FOIL - A method and system are provided for dividing a continuous barrier foil into a barrier foil segment that may be cut without exposing an organic layer in the barrier foil segment. A groove is formed alongside a perimeter of the barrier foil segment. The groove extends through the organic layer and is sealed by a sealing material to form a sealed groove. The sealed groove may prevent moisture and/or oxygen from reaching organic material in the barrier foil segment when it is cut. A sealed barrier foil segment is thus provided. | 2015-07-16 |
20150200371 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed cyclic compound represented by Formula 1, | 2015-07-16 |
20150200372 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE COMPRISING SAME, AND DISPLAY COMPRISING ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device, an organic light emitting diode including the compound, and a display device including the organic light emitting diode are provided and the compound in which moieties represented by Chemical Formulae I and II that are sequentially linked is provided and thus, the organic light emitting diode has excellent life-span characteristics due to excellent electrochemical and thermal stability and high luminous efficiency at a low driving voltage. | 2015-07-16 |
20150200373 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, where the emission layer includes a first host represented by Formula 1 and a second host represented by Formula 2: | 2015-07-16 |
20150200374 | Dopant for a Hole Conductor Layer for Organic Semiconductor Components, and Use Thereof - The invention relates to novel metal-organic materials for hole injection layers in organic electronic components. For example, in light-emitting components such as organic light diodes (OLED) or organic light-emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photo detectors. Luminescence (cd/m | 2015-07-16 |
20150200375 | FLEXIBLE DISPLAY DEVICE - A flexible display device includes a flexible display panel, a flexible outer member disposed on the flexible display panel, and a stress control member disposed between the flexible display panel and the flexible outer member, wherein the stress control member is configured to define neutral planes in the flexible display panel and the flexible outer member when the flexible display device is bent. | 2015-07-16 |
20150200376 | PRE-FABRICATED SUBSTRATE FOR PRINTED ELECTRONIC DEVICES - A pre-patterned substrate has a supporting material, a plurality of segments on the supporting material, a plurality of interdigitated line structures within each segment to allow formation of features, and an isolation region between the segments. | 2015-07-16 |
20150200377 | ORGANO METAL HALIDE PEROVSKITE HETEROJUNCTION SOLAR CELL AND FABRICATION THEREOF - The present invention provides a solid state heterojunction solar cell comprising a transparent conducting support layer ( | 2015-07-16 |
20150200378 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - Various embodiments may relate to an optoelectronic component, including a first organic functional layer structure, a second organic functional layer structure and a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure. The charge generating layer structure includes a hole-conducting charge generating layer and a first electron-conducting charge generating layer. The hole-conducting charge generating layer includes or is formed from an inorganic substance or an inorganic substance mixture. The first electron-conducting charge generating layer includes or is formed from an organic substance or an organic substance mixture. The first electron-conducting charge generating layer includes or is formed from an organic, intrinsically electron-conducting substance. | 2015-07-16 |
20150200379 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME - An organic light-emitting device and a method of producing the same, the device including a substrate; a first electrode layer on the substrate; an emission layer on the first electrode layer; an electron transport layer on the emission layer, the electron transport layer including first electron transport layers and a second electron transport layer between the first electron transport layers and the second electron transport layer including a lanthanide metal; and a second electrode layer on the electron transport layer. | 2015-07-16 |
20150200380 | ORGANIC DISPLAY DEVICE AND MANUFACTURING METHOD - An organic display device and a manufacturing method are disclosed. The organic display device comprises: an organic light-emitting layer ( | 2015-07-16 |
20150200381 | ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device (OLED) is provided, comprising a first electrode and a second electrode disposed oppositely, and an organic light emitting (EL) layer formed between the first electrode and the second electrode, wherein the EL layer comprises at least one organic light emitting material. In one embodiment, the EL layer is a dipole controlled organic light emitting layer, and the longest axes of organic molecules of the organic light emitting material or exciton dipole moments of the organic molecules are anisotropically oriented, such as arranged as an anisotropic array, for decreasing the possibility of exciton energy directly coupled into the cathode. In an alternative embodiment, a periodic array of nano-grating structure is formed between the first and second electrodes for decreasing the possibility of propagation of the TM polarized light. Accordingly, the light efficiency of the OLED is significantly improved. | 2015-07-16 |
20150200382 | ORGANIC LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF - Provided is an organic light-emitting diode (OLED) including: a substrate; a wide viewing-angle homogenization layer on the substrate; a first electrode layer on the wide viewing-angle homogenization layer; a hole transport layer on the first electrode layer; an organic emission layer disposed on the hole transport layer to emit a light; an electron transport layer on the organic emission layer; and a second electrode layer on the electron transport layer. | 2015-07-16 |
20150200383 | SPUTTERING DEVICE AND SPUTTERING METHOD - One or more embodiments of the present invention relate to a sputtering device and a sputtering method. By using the sputtering device according to the present embodiment, characteristics of a deposition layer formed at the organic light emitting display apparatus may be improved, thereby improving electric characteristics and image quality of the organic light emitting display apparatus may be improved. | 2015-07-16 |
20150200384 | ELECTRIC VEHICLE BATTERY CELL HAVING CONDUCTIVE CASE - An example battery cell for an electric vehicle includes at least one conductive case, and an electrode structure in direct electrical contact with the at least one conductive case. The electrode structure is to selectively provide power to an electric vehicle. | 2015-07-16 |
20150200385 | BATTERY ASSEMBLY, ELECTRONIC CIGARETTE, AND METHOD FOR ASSEMBLING THE BATTERY ASSEMBLY - The present application discloses a battery assembly, an electronic cigarette using the battery assembly, and a method for assembling the battery assembly. The battery assembly is configured to be connected with an atomizing assembly to form the electronic cigarette. The battery assembly comprises a battery sleeve, a battery, an end cover, a control module, and an electronic wire. The end cover defines an assembling hole configured to mount the control module therein, and the end cover further defines at least one wire holding groove in an inner wall of the assembling hole and configured to enable the electronic wire to pass through. The wire holding groove can effectively prevent the electronic wire from being squeezed and scraped by the battery sleeve and the end cover. Open-circuit and short-circuit of the circuit in the battery assembly can be avoided, and the product quality of the battery assembly can be improved. | 2015-07-16 |
20150200386 | BATTERY AND METHOD FOR PRODUCING SAME - A battery houses an electrode body inside a battery case including a bottomed cylindrical case body having an opening part, and a plate-like lid member inserted in the opening part so as to seal the opening. The opening part and a lid peripheral edge part are welded hermetically by an energy beam irradiated from outside in the thickness direction of the lid member. In a specific section, the inner peripheral surface of the opening part and the peripheral edge surface of the lid peripheral edge part are welded in close contact with each other. A bead at the specific section takes a fan shape having a central angle of 160 to 200 degrees in a cross section, and the center of the fan shape is positioned on the inner peripheral surface and the peripheral edge surface. | 2015-07-16 |
20150200387 | SEPARATOR FOR NONAQUEOUS ELECTROLYTE BATTERY, NONAQUEOUS ELECTROLYTE BATTERY, AND METHOD FOR PRODUCING NONAQUEOUS ELECTROLYTE BATTERY - Provided is a separator for a nonaqueous electrolyte battery, including a porous substrate and an adhesive porous layer that is provided on one side or both sides of the porous substrate and contains an adhesive resin. The separator has a thermal expansion coefficient of more than 0% and 10% or less in the width direction when heat-treated at 105° C. for 30 minutes. | 2015-07-16 |
20150200388 | SEPARATOR FOR NONAQUEOUS ELECTROLYTE BATTERY, AND NONAQUEOUS ELECTROLYTE BATTERY - Provided is a separator for a nonaqueous electrolyte battery including a composite membrane. The composite membrane includes a porous substrate that contains a thermoplastic resin and an adhesive porous layer that is provided on at least one side of the porous substrate and contains an adhesive resin. The difference between the Gurley number of the porous substrate and the Gurley number of the composite membrane is 75 sec/100 cc or less. The difference between the tortuosity of the porous substrate and the tortuosity of the composite membrane is 0.30 or less. | 2015-07-16 |
20150200389 | Metal Accumulation Inhibiting And Performance Enhancing Supplement And A System For Delivering The Supplement - The invention relates to a metal accumulation inhibiting and performance enhancing isolated or synthesized supplement for use in or in association with rechargeable electrochemical energy storage cells, and a system for delivering the supplement including articles of plastic, articles containing plastic, articles similar to plastic, plastic containers, apparatus, porous electrodes, liquids and electrolytes, in particular, articles, apparatus, electrodes, insolating sheets, liquids and electrolytes associated with rechargeable electrochemical energy storage cells incorporating one or more supplements. An effective amount of the supplement typically exhibits foaming of an electrolyte, providing a visual indicator of activity in attenuating metal deposition on, and thereby reducing metal accumulation on, various surfaces in the rechargeable electrochemical storage cell. | 2015-07-16 |
20150200390 | Transition Metal Cyanometallate Cathode Battery with Metal Plating Anode - A method is provided for cycling power in a transition metal cyanometallate (TMCM) cathode battery. The method provides a battery with a TMCM cathode, an anode, and an electrolyte, where TMCM corresponds to the chemical formula of A | 2015-07-16 |
20150200391 | SILICON NANOWIRE STRUCTURE EMBEDDED IN NICKEL SILICIDE NANOWIRES FOR LITHIUM-BASED BATTERY ANODES - The present invention provides a silicon nanowire structure embedded in nickel silicide nanowires for lithium-based battery anodes and anodes including the same. In particular, a Si nanowire structure embedded in NiSi | 2015-07-16 |
20150200392 | NEGATIVE ELECTRODE ACTIVE MATERIAL - Provided is a negative electrode active material that can improve the capacity per volume and charge-discharge cycle characteristics of a nonaqueous electrolyte secondary battery represented by a lithium ion secondary battery. The negative electrode active material according to the present embodiment contains an alloy phase. The alloy phase undergoes thermoelastic diffusionless transformation when releasing or occluding metal ions. The negative electrode active material of the present embodiment is used in a nonaqueous electrolyte secondary battery. Thermoelastic diffusionless transformation refers to so-called thermoelastic martensitic transformation. | 2015-07-16 |
20150200393 | Composition for Reducing Moisture in a Battery Electrolyte - In at least one embodiment, a lithium-ion battery is provided comprising a positive electrode, a negative electrode, an electrolyte, and a separator situated between the electrodes. At least one of the electrodes may include a proton absorbing material. The proton absorbing material may be an atomic intermetallic material including a proton absorbed state. The proton absorbing material may react with protons in the electrolyte to reduce moisture formation and cathode degradation in the battery. The proton absorbing material may absorb at least 0.5 wt. % hydrogen and may be present in the anode and/or cathode in an amount from 0.01 to 5 wt. %. | 2015-07-16 |
20150200394 | CATHODE ACTIVE MATERIAL AND PROCESS FOR ITS PRODUCTION - To provide a cathode active material having excellent cycle characteristics and a small decrease in the discharge voltage, and a process for its production. | 2015-07-16 |
20150200395 | METHOD OF MAKING A CATHODE SLURRY AND A CATHODE - A cathode slurry comprising organic solvent, lithium iron phosphate, polymeric binder, and at least one conductive agent, and from about 30 wt. % to about 40 wt. % solids is prepared. The cathode slurry may be coated onto at least one side of a substrate to form a cathode coated substrate. The cathode coated substrate may be dried to form a cathode. An anode and cathode may be contained within a housing with electrolyte to form a lithium ion cell. | 2015-07-16 |
20150200396 | APPARATUS AND METHOD FOR MANUFACTURING AN ELECTRICITY STORAGE MATERIAL - An apparatus and method for manufacturing an electricity storage material are provided which allow easily measuring the dissolution rate to solubility of a solution of a powder thickener dissolved in a liquid solvent. An apparatus for manufacturing an electricity storage material includes: a dissolving device that dissolves in a liquid solvent a thickener as powder that is ionized when dissolved; and a dissolution-rate-to-solubility determining device that measures conductivity of the solution produced by the dissolving device and determines a dissolution rate to solubility of the solution based on the measured conductivity. The dissolution rate to solubility can thus be determined without the need to stop the dissolving device during dissolution of the thickener in the liquid solvent. This can significantly improve production efficiency. Since excessive operation of the dissolving device can be prevented, energy saving can be achieved. | 2015-07-16 |
20150200397 | NEGATIVE ELECTRODE FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING SAME - Disclosed is a negative electrode for a rechargeable lithium battery that includes a negative active material and a binder, wherein the binder includes carboxymethyl cellulose, polyvinyl alcohol, and a styrene-butadiene rubber, and a rechargeable lithium battery including the same. | 2015-07-16 |
20150200398 | BINDER COMPOSITION FOR SECONDARY BATTERY, CATHODE AND LITHIUM BATTERY INCLUDING THE BINDER COMPOSITION - In an aspect, a binder composition for a secondary battery including a first fluoropolymer binder containing a polar functional group; a second fluoropolymer binder that does not contain a polar functional group; and a non fluoropolymer binder is provided. | 2015-07-16 |
20150200399 | BINDER COMPOSITION FOR SECONDARY BATTERY, CATHODE AND LITHIUM BATTERY INCLUDING THE BINDER COMPOSITION - In an aspect, a binder composition for a secondary battery including a first fluoropolymer binder including a tetrafluoroethylene polymer binder, a second fluoropolymer binder including a vinylidene fluoride binder, and a non fluoropolymer binder is provided. | 2015-07-16 |
20150200400 | LEAD-ACID BATTERY FORMULATIONS CONTAINING DISCRETE CARBON NANOTUBES - Compositions of discrete carbon nanotubes for improved performance lead acid batteries. Further disclosed is a method to form a lead-acid battery with discrete carbon nanotubes. | 2015-07-16 |
20150200401 | BIPOLAR ELECTRODE AND METHOD FOR PRODUCING SAME - Bipolar electrode ( | 2015-07-16 |