10th week of 2009 patent applcation highlights part 17 |
Patent application number | Title | Published |
20090057589 | Needle-free medical connector - A needleless connector for controllably permitting fluid communication between a cannula and a port usually associated with a patient catheter or line. The connector is made from three parts, two of which form an elongated housing for a valve part. The valve part comprises a domed slit valve which is in a closed state before a cannula is inserted into the housing. Insertion of the cannula inverts the dome valve to open a slit permitting fluid communication there through. Insertion of the cannula also displaces the valve part about and along a post internally disposed in the housing. Assembled, the valve part is initially disposed about the post in a compressive sealed relationship to form a secure pathway therebetween. The post is shaped to store greater energy by stretching portions of the valve part as the valve part is displaced therealong. Upon removal of the cannula, stored energy is released from the stretched portion of the valve part to return the valve part to an original state, presenting a closed and cleanable surface to a user. | 2009-03-05 |
20090057590 | Flow Control Valve - A flow control valve is provided that comprises a valve housing having an inlet, an outlet, and a valve chamber that includes a first valve port opening in communication with the inlet and a second valve port opening in communication with the outlet. The various embodiments further comprise a modulating member having first and second tapered arcuate slots therein, which is disposed in the valve chamber approximate the first valve port opening and second valve port opening. The modulating member is rotatable to adjustably position a wider or narrower portion of both the first tapered arcuate slot and second tapered arcuate slot over the first valve port opening and second valve port opening respectively, to adjustably vary the rate of fluid flow through the valve. | 2009-03-05 |
20090057591 | Valve fitting with integral stops - A valve fitting including a mixing valve housing, a first stop valve configured to control the flow of fluid through a first inlet, and second stop valve configured to control the flow of water through a second inlet. | 2009-03-05 |
20090057592 | FLOW CONTROL AND CLOSURE VALVE WITH AXIAL FLOW IN THE VALVE ELEMENT - A metering valve for controlling the flow rate of a fluid has a substantially rigid housing having an internal cylindrical wall defining a cavity. The cavity has a first opening at one end and a spaced second opening in the cylindrical wall. A substantially rigid valve element that fits closely within the cavity has an internal bore extending axially from a first end toward a second end. A metering aperture penetrates the valve element wall between the outer surface of the valve element and the valve element bore. Moving the valve element within the housing cavity to a first position places a portion of the second opening within the cavity's second opening at a first position to allow a first rate of fluid flow between the first chamber and the second chamber. Moving the valve element to a second position places the metering aperture at a second position different from the first position to allow a second rate of fluid flow between the first and second chambers. The flow has an axial flow vector within the valve element bore and a radial flow vector through the metering aperture. | 2009-03-05 |
20090057593 | Staggered Cylinders in a Valve Gate Apparatus - A valve gate piston assembly, in an injection molding system, is positioned in a staggered arrangement such that one piston assembly overlaps that of another valve gate piston assembly thereby minimizing an overall centerline pitch between said piston assemblies. Such a superposed layout of piston assemblies enables larger diameter pistons to occupy a smaller footprint than would be realized should the same piston assemblies be positioned side by side. The use of relatively larger diameter pistons results in an increased force available, for the same input air pressure, to actuate the pistons and valve stems attached thereto, resulting in a higher valve stem closing force. A staggered piston assembly layout also allows independent air circuits to control each piston separately. A combination of multiple piston assemblies may be configured in such a staggered, overlapping array. | 2009-03-05 |
20090057594 | BLEED VALVE APPARATUS - A valve body has an annular bottom face and an inner circumferential periphery both defining a seat fitting hole, which is coaxial with a sliding hole. A spool is axially movable in the sliding hole. A seat member has an axial end surface and an outer circumferential periphery, which are respectively axially and radially press-fitted to the annular bottom face and the inner circumferential periphery to respectively define an annular seal portion and a cylindrical seal portion therebetween. The seat member has a bleed port for draining fluid from a bleed chamber. The spool has an end surface, which defines a small clearance between the end surface and the seat member when the spool is seated to the seat member for communicating a supply port with the bleed chamber. | 2009-03-05 |
20090057595 | Fluid Pressure Control Device Having a Throttling Element Seal - A fluid flow control device includes a body defining an inlet, an outlet, and a fluid flow path extending from the inlet to the outlet. A valve seat ring is coupled to the body and defines an orifice through which the fluid flow path passes. A cage is also coupled to the body and defines an interior bore, wherein the cage includes at least one passage through which the fluid flow path passes. A throttling element is sized for insertion into the cage interior bore and movable along an axis between open and closed positions. The throttling element defines a sealing surface oriented substantially parallel to the axis. A seal is positioned to engage the sealing surface when the throttling element is substantially in the closed position, thereby to restrict fluid flow through the valve seat ring orifice. | 2009-03-05 |
20090057596 | Pendulum valve having independently and rapidly controllable theta-and z-axis motion - A Pendulum Valve having Independently and Rapidly Controllable Theta- and Z-axis Motion. The valve actuator used in the present invention provides the benefit of wide open unrestricted flow of a pendulum valve coupled with the high-resolution and wide dynamic range flow throttling of a ball or butterfly valve. The actuator mechanism will include motor drives and associated control system so that the drives are closely coupled to give highly controlled motion. The drive assembly introduces a concentric shaft arrangement that, when coupled with the highly controllable motor drives, exploits a cam-follower arrangement to make the relative rotation between the two concentric shafts result in highly controlled theta and z-axis motion. Finally, the plate to seal spacing afforded is greater than previously possible with prior valve actuator mechanisms, thereby substantially reducing flow turbulence through the valve as the valve plate eclipses the valve ports. | 2009-03-05 |
20090057597 | PROTECTION VACUUM GATE VALVE - The present invention relates to an improved vacuum gate valve for a corrosion prevention. The corrosion prevention vacuum gate valve comprises a second actuator which includes a hollow first body which has a second compression air inlet for moving up the corrosion prevention sealing member and a hollow second body which has a third compression air inlet moving down the corrosion prevention sealing member and at least one flow control groove which is provided at the upper side for moving the fluid from the chamber to the vacuum pump. | 2009-03-05 |
20090057598 | Resilient Wedge Gate Valve - A resilient wedge for a gate valve displaceable by a valve stem along a longitudinal axis extending through at least a portion of a valve body. The resilient wedge is displaceable between an open position and a closed position and includes a pair of wedge guides each having a channel portion for engaging respective body guides on an interior cavity of the valve body. A wedge body having a pair of slots is configured to receive at least a portion of the wedge guides. | 2009-03-05 |
20090057599 | ELASTIC VALVE AND MICROFLUIDIC DEVICE INCLUDING THE SAME - An elastic valve and a microfluidic device including the same are provided. The elastic valve includes a channel dented by external pressure so as to be elastically restituted; and a plurality of channel closing protrusions, which comprise elastomer as a material, which are protruded from at least one inner side surface of the channel toward an opposite inner side surface, and which are separated from each other so as not to interrupt a flow of fluids, wherein, when external pressure is applied in order to dent the channel, the plurality of channel closing protrusions are deformed so as to be elastically restituted, thereby closing the channel. | 2009-03-05 |
20090057600 | Vacuum opening/closing valve - A durable vacuum opening/closing valve connectable with a vacuum chamber and a vacuum pump is arranged to control vacuum pressure in the vacuum chamber by changing an opening degree of an O ring serving as a valve element relative to a valve seat. A predetermined clearance between an outer peripheral surface of a piston and an inner peripheral surface of a cylinder is sealed by a bellofram which changes its shape in association with movement of the piston moved to open or close the valve. The bellofram includes an inclined surface with a predetermined inclination angle and the outer periphery of the piston includes an inclined surface with a predetermined inclination angle, so that an inner diameter of the bellofram in contact with the piston and the outer diameter of the piston are equal when the valve element is in contact with the valve seat. | 2009-03-05 |
20090057601 | Push-Fit Valve With Integrated Mounting Assembly - The present invention provides an integrated valve, push connection and push release components, and a valve mounting assembly for use on fluid, air or gas applications. The invention allows for the installation of the valve by sliding the valve over the supply tube/piping or pushing the tube/piping into the valve. Once connected, an o-ring seals the connection, a packing gland applies energy to the o-ring seal maintaining constant, even pressure across the seal, and a grip ring applies opposing energy to prevent the disconnection of the assembly. The quick connection assembly is retained by a retaining cap, which applies constant, positive force on the sealing surface. | 2009-03-05 |
20090057602 | NON-SETTLING GLYCOL BASED MAGNETORHEOLOGICAL FLUIDS - A magnetorheological fluid comprising magnetic-responsive particles, a thickener, an ionic thixotropic additive, and a carrier fluid wherein the carrier fluid comprises a glycol-water mixture comprising at least 50 percent by weight of a glycol compound. The thickener is preferably fumed silica and the ionic thixotropic additive is preferably one of sodium nitrite, sodium chloride, sodium acetate, and sodium benzoate. | 2009-03-05 |
20090057603 | Urethane foam molded article, manufacturing method thereof, and magnetic induction foam molding apparatus - A magnetic induction foam molding apparatus comprising: a pair of electromagnet parts, each of which has a core part composed of a ferromagnet and a coil part placed on the outer circumference surface of the core part, and that are placed so as to face each other and depart from each other with a predetermined distance in the axis direction of the core part; a foaming mold interposed between the pair of electromagnet parts, inside which a cavity is defined; and a yoke part connecting back surfaces of the respective core parts of the pair of the electromagnet pats so as to form a magnetic path between a pair of the back surfaces. In the cavity of the foaming mold, a uniform magnetic field is formed. | 2009-03-05 |
20090057604 | Man-made material presenting magnetic response at different frequencies - A man-made magnetic material presenting magnetic response at different frequencies is made from non-magnetic conductive metal and formed in a four-way symmetrical structure consisting of four L-shaped units. A plurality of the four-way symmetrical structures is arranged to form a periodic array. The four-way symmetrical structure is formed at a size much smaller than the wavelength of incident light. Hence it is treated as an effective uniform medium in terms of the incident light. Such a novel planar structure can generate magnetic response in a wide range of bandwidth. The frequency band capable of generating the magnetic response also can be regulated and altered through control of the structural size. | 2009-03-05 |
20090057605 | FINE, COATED METAL PARTICLES AND THEIR PRODUCTION METHOD - A method for producing fine, coated metal particles comprising the steps of mixing Ti-containing powder except for Ti oxide powder with oxide powder of a metal M, an M oxide having a standard free energy of formation meeting the relation of ΔG | 2009-03-05 |
20090057606 | Ferrite material and method for producing ferrite material - The invention provides a ferrite material (ferrite sintered body, ferrite powders) having a composition formula of (1−x−y−z)(Li | 2009-03-05 |
20090057607 | Reduced toxicity ethylene glycol-based antifreeze/heat transfer fluid concentrates and antifreeze/heat transfer fluid concentrates and antifreeze/heat transfer fluids - A reduced toxicity ethylene glycol-based antifreeze/heat transfer fluid concentrate is provided comprised of ethylene glycol, a polyhydric alcohol having a boiling point above about 150° C. and that acts as an alcohol dehydrogenase inhibitor, such as propylene glycol or glycerol, and selected additives. The antifreeze/heat transfer fluid concentrate may be combined with water to form a coolant solution for use in internal combustion engines. | 2009-03-05 |
20090057608 | ALKOXYLATE COMPOSITION AND A PROCESS FOR PREPARING THE SAME - A process for the preparation of an alkoxylate composition, said process comprising the steps of: (a) introducing into a reactor system one or more compounds with one or more active hydrogen atoms, selected from the group comprising alkanoic acids, alkanoic amides, alkanoic ethanolamides, alcohols and alkylmercaptans, and a double metal cyanide catalyst; (b) contacting the one or more compounds with one or more active hydrogen atoms and the double metal cyanide catalyst with propylene oxide and/or butylene oxide to form a first product mixture comprising double metal cyanide catalyst and compounds formed by the addition of one of more propylene oxide and/or butylene oxide units to the one or more compounds with one or more active hydrogen atoms; and (c) contacting the first product mixture with ethylene oxide to form a second product mixture comprising compounds formed by the addition of one of more ethylene oxide units to the compounds formed in step (b). | 2009-03-05 |
20090057609 | Solid hydrogen source compounds and method for generating hydrogen - The present invention relates to solid compounds which generate hydrogen by combustion, and to a method for generating hydrogen based on the combustion of said compounds. Said compounds have a composition which includes at least one inorganic borohydride, selected from alkali borohydrides, alkaline-earth borohydrides and mixtures thereof, and at least one inorganic oxidant. Characteristically, said composition comprises sulfur. Said method is advantageously implemented for supplying hydrogen to a fuel cell. | 2009-03-05 |
20090057610 | PLASTICIZERS FOR IMPROVED ELEVATED TEMPERATURE PROPERTIES IN CELLULOSE ESTERS - In one aspect, the invention relates to a composition comprising a cellulose ester and a high boiling plasticizer having a boiling point greater than 370° C., wherein the composition has a glass transition temperature (Tg) greater than a similar composition having triphenyl phosphate (TPP) plasticizer substituted for the high boiling plasticizer. The invention also related to articles and films made therefrom. This invention also relates to methods of making the compositions, articles and films. | 2009-03-05 |
20090057611 | PHOSPHOR AND PROCESS FOR PRODUCING THE SAME - A green phosphor that exhibits a green luminance higher than those of conventional rare-earth-activated sialon phosphors, having durability higher than those of conventional oxide phosphors, and that emits light by ultraviolet or visible light. There is provide a phosphor comprising a crystal of oxynitride or nitride with β-type Si3N4 crystal structure and, solid dissolved therein, Eu, which phosphor emits a fluorescence having a peak at a wavelength falling within the wavelength region of 500 to 600 nm upon excitation source irradiation. The luminous intensity within the wavelength region of 500 to 600 nm is high, so that the phosphor is excellent as a green phosphor. | 2009-03-05 |
20090057612 | PHOSPHOR AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a novel phosphor which can be manufactured without using a defect formation step which is difficult to control, and a manufacturing method thereof. The phosphor has a structure including a phosphor host material and an emission excitation material which is dispersed in a marbled pattern in the phosphor host material while being in contact with it. The emission excitation material is selected from metal oxide, a semiconductor formed of an element belonging to Group 2B (Group 12) of the periodic table and an element belonging to Group 6B (Group 16) of the periodic table, or an element formed of an element belonging to Group 3B (Group 13) of the periodic table and an element belonging to Group 5B (Group 15) of the periodic table. The phosphor host material and the emission excitation material are mixed and baked with pressure to be joined. | 2009-03-05 |
20090057613 | FLUORESCENT QUINACRIDONES - The present invention relates to compounds of the Formula (I), a process for their preparation and their use for the preparation of inks, colorants, pigmented plastics, coatings, non-impact-printing material, color filters, cosmetics, polymeric ink particles, toners, as fluorescent tracers, in color changing media, in solid dye lasers and electroluminescent devices. A luminescent device comprising a composition according to the present invention is high in the efficiency of electrical energy utilisation and high in luminance. | 2009-03-05 |
20090057614 | SOFT-LIFT OFF OF ORGANIC NANOFIBERS - The invention relates to a method of releasing an ensemble of nanofibres from a dielectric substrate as well as to applications of the method. The organic nanofibres are grown on the substrate and can be released by first providing a polar liquid to a surface of the substrate and subsequently supplying energy to the combined system of nanofibres and liquid. The release may preferably be followed by transferring the released nanofibres to another substrate for application of the nanofibres, including alignment and/or structuring of the nanofibres. The applications includes light emitting, guiding and sensing applications. | 2009-03-05 |
20090057615 | Corrosion inhibitors containing nonionic surfactants - The invention relates to the use of compounds of the formula (1) | 2009-03-05 |
20090057616 | Corrosion inhibitors containing cationic surfactants - The invention relates to the use of compositions containing metal salts of compounds of the formula (1) | 2009-03-05 |
20090057617 | Corrosion inhibitors containing anionic surfactants - The invention relates to the use of compounds of the formula (1) | 2009-03-05 |
20090057618 | Corrosion inhibitors containing amphoteric surfactants - The invention relates to the use of compositions containing metal salts of compounds of the formula (1) | 2009-03-05 |
20090057619 | Compositions and Visual Perception Changing Methods - A composition includes at least one visual indicator dye and a surfactant. Upon dilution of the composition with a volume of water a diluted product is formed, and wherein: i) the extinction coefficient of the composition is less than the extinction coefficient of the diluted product measured at a wavelength from about 400 nm to about 700 nm; ii) a ratio of an absorbance measured between about 550-650 nm and an absorbance measured between about 395-440 nm increases upon increasing dilution of the composition; and/or iii) the pK | 2009-03-05 |
20090057620 | POLYMER-NANOPARTICLE COMPOSITIONS AND METHODS OF MAKING AND USING SAME - Disclosed are polymer nanoparticle compositions comprising a film comprising an at least partially electrically conductive oligomer, polymer, or copolymer, and at least one nanoparticle at least partially disposed therein, wherein the at least partially electrically conductive oligomer, polymer, or copolymer is in electrical communication with the nanoparticle. Also disclosed are methods of making and using the polymer nanoparticle compositions. | 2009-03-05 |
20090057621 | ELECTRICALLY CONDUCTIVE COMPOSITIONS AND METHOD OF MANUFACTURE THEREOF - Disclosed herein is a method of manufacturing an electrically conductive composition comprising reducing the viscosity of a molten masterbatch to form a reduced viscosity molten masterbatch; and mixing the reduced viscosity molten masterbatch with a polymer to form the electrically conductive composition. Disclosed herein too is a method of manufacturing an electrically conductive composition comprising mixing a molten masterbatch with a first polymer in a first extruder, wherein the first polymer has a melt viscosity that is lower than the melt viscosity of the molten masterbatch; reducing the melt viscosity of the molten masterbatch to form a reduced viscosity molten masterbatch; and mixing the reduced viscosity molten masterbatch with a second polymer in a second extruder to form the electrically conductive composition. | 2009-03-05 |
20090057622 | Simulant of Radiological Contamination - A composition is formulated with generally regarded as safe (GRAS) ingredients for use as a non-radio-active simulant of radiological contamination such as fallout from a nuclear explosion, particulate from a radiological dispersal device, or contamination from operation of nuclear facilities. The compositions can be used for training exercises, testing, and research studies, and they can be applied safely to human skin. They include an ultraviolet (UV)-excited fluorescent ingredient that makes possible visible viewing of the simulants when illuminated by UV light. The chemical simulants have good fidelity with the physical properties of contamination, for example, adhesion, particle size, electrostatic charging, and response to decontamination technologies such as washing and vacuuming. | 2009-03-05 |
20090057623 | DNA-BASED FUNCTIONALIZATION OF SINGLE WALLED CARBON NANOTUBES FOR DIRECTED ASSEMBLY - Disclosed herein is an article comprising a nucleic acid-carbon nanotube molecular composite in selective communication with at least one of a plurality of material phases; the selective communication being the result of an affinity of functional groups present in the nucleic acid-carbon nanotube molecular composite for the at least one of the plurality of material phases; the material phases being at least a part of a substrate; the nucleic acid-carbon nanotube molecular composite comprising at least one of i) a nucleic acid disposed on a functionalized carbon nanotube; ii) a functionalized nucleic acid disposed on a carbon nanotube; and iii) a functionalized nucleic acid disposed on a functionalized carbon nanotube to form a nucleic acid-carbon nanotube molecular composite. | 2009-03-05 |
20090057624 | INJECTION MOLDED ARTICLE AND COMPOSITION FOR THE PREPARATION THEREOF - A composition containing particular amounts of a poly(arylene ether), a poly(arylene sulfide), an electrically conductive carbon black, and glass fibers is particularly useful for molding heat-resistant articles suitable for electrostatic painting. Compared to a corresponding composition without the poly(arylene ether), the composition exhibits improved paint attraction and markedly improved paint adhesion, and it allows the use of a lower level of conductive carbon black to achieve the same electrical conductivity. The composition thus provides an excellent balance of impact strength, electrical conductivity, and paint attraction and adhesion. | 2009-03-05 |
20090057625 | TRANSPARENT CONDUCTOR - It is an object of the present invention to provide a transparent conductor exhibiting a small increase in resistance value even when used under high-humidity conditions over long periods of time. A transparent conductor in a preferred embodiment comprises indium tin oxide, an additive component having zinc oxide as a main component thereof, and a resin cured product, the content of the additive component being 0.1 to 50 wt % relative to the total amount of indium tin oxide and the additive component. | 2009-03-05 |
20090057626 | SEMICONDUCTOR CERAMIC COMPOSITION AND METHOD FOR PRODUCING THE SAME - It is intended to provide a semiconductor ceramic composition capable of shifting the Curie temperature to a positive direction as well as of obtaining an excellent jump characteristic while suppressing an increase in room temperature resistivity to a minimum value. There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO | 2009-03-05 |
20090057627 | Method of quenching electronic excitation of chromophore-containing organic molecules photoactive compositions - A method of quenching fluorescence of a naphthalate polyester that is subjected to UV-radiation in an amount sufficient to cause the naphthalate polyester to reach an excited state and fluoresce, comprising adding to the naphthalate polyester a fluorescence quenching amount of a compound of formula (1): | 2009-03-05 |
20090057628 | System for the simultaneous introduction of two items into a conduit | 2009-03-05 |
20090057629 | POSITIONING UNIT OF A CARPET KICKER - A positioning unit of a carpet kicker having a housing with a rear end having a receiving element into which a 7-shaped hook member is engaged. The 7-shaped hook member includes a shorter internal portion for engaging into the receiving element in place and a longer external portion for leaning against a wall in an upright state. A flat hook portion is formed at the bottom of the external portion. The 7-shaped hook member includes a plurality of strengthening ribs that are arranged in a non-flat and parallel manner in a vertical direction. In this way, a more convenient human machine operation interface is ensured. Moreover, it is avoidable that an inclined position is created by a single point reacting force during the operation of the kicker. Accordingly, the carpet may be smoothly pulled and spread on the floor in place. | 2009-03-05 |
20090057630 | Method and System for Governing Block Speed - A task input is received at a well service rig. The maximum allowable speed is determined for the task. Current block speed inputs are received. The throttle position for the engine controlling the block is evaluated to determine if the block is to be sped up or slowed down. When the throttle position indicates the operator is attempting to speed up the block, the current block speed is compared to the maximum allowable speed and the engine is only allowed to speed up the block up to the maximum allowable speed, at which point the operators control of block speed is limited to reducing block speed. Each task can have multiple maximum allowable speeds, which can vary based on specified conditions. When the hookload is light or the remaining equipment in the well is small, the lock-up feature for the transmission can be disengaged in addition to the block speed governing feature. | 2009-03-05 |
20090057631 | GEARLESS ABSEILING DEVICE - The invention relates to an abseiling device comprising a cable feeding point and a cable output point ( | 2009-03-05 |
20090057632 | Mechanical adjustment device of a pressing and guiding sheave assembly of an aerial rope of a mechanical lift installation - A mechanical adjustment device of a sheave assembly of a mechanical lift installation, where the sheave assembly is equipped with rotary sheaves mounted rotating on a support frame comprising a shoe fixed by clamping means to a support of a pylon of the installation, comprises adjustment means of the incline, obtained after clamping, of the support with respect to the shoe in a lateral direction oriented in a direction parallel to the axes of rotation of the sheaves. | 2009-03-05 |
20090057633 | Jack assembly - An improved jack assembly for use with a trailer tongue of a towed vehicle. The jack assembly including telescoping height adjustment of the assembly, a pivot assembly for pivoting between a vertical and horizontal stowed position, and a clip for maintaining a handle assembly in a stowed position when not in use. The jack assembly also includes the use of bushings for the telescoping tubes to enhance the sliding movement between the tubes and aid in maintaining the axial alignment of the tubes thereby extending the life of the jack assembly. The pivot assembly further includes an attachment bracket that may be rotated to accommodate at least two different sizes of trailer tongues. | 2009-03-05 |
20090057634 | RV stabilizer system - A stabilizer mechanism and stabilizer system for securement to the underside of fifth-wheel trailers, trailers or the like. The important feature of this invention is a stabilizer mechanism where the upper mounting bracket and lower foot bracket are off center. The stabilizer by itself would lean to one direction. The stabilizer is to be used in pairs with each placed as to lean in the direction of the other. The heavier the load the more stabilizing effect is applied. | 2009-03-05 |
20090057635 | Motorcycle righting jack - A motorcycle jack is described which allows an individual to right a motorcycle which has been downed, by themselves. The jack has a cradle, which maintains its horizontal disposition while the jack raises the bike from beneath the foot board bracket. | 2009-03-05 |
20090057636 | PORTABLE LIFT DEVICE AND SYSTEM - A lift device having a lift structure and a control structure. The lift structure includes a plurality of hydraulic cylinders concentrically arranged. Each cylinder includes a first chamber and a second chamber. At least one of the cylinders includes the second chamber being in fluid communication the first chamber of an adjacent cylinder. The cylinders are operably disposed to extend or retract in response to fluid pressure applied to a first chamber of at least one of the cylinders. The control structure is arranged and disposed to apply a control force to at least one of the cylinders to controllably extend or retract the plurality of cylinders. A portable lift system and method for lifting a platform is also disclosed. | 2009-03-05 |
20090057637 | Mounting Straps for Barriers - Mounting straps for a barrier are provided. The barriers comprise an intersecting mesh of barrier elements and an outer edge at the perimeter of the barrier. The mounting straps are attachable to the outer edge of the barrier. The mounting straps comprise at least one finished hole and are anchorable frame elements by fastening mounting hardware through one of the mounting strap's finished holes. | 2009-03-05 |
20090057638 | Plastic or composite slat with wooden appearance - A plastic or composite slat with wooden appearance, to be inserted into chain link fences, having three or more longitudinal projections on at least one face of the slat. A majority of the projections on a face of the slat having projections are the same color as the slat, and a minority of the projections on such a face have a color different from that of the slat. The slat and a majority of the projections on each face are extruded; the minority of the projections on each face are either co-extruded from an extrudable material having a color different from the color of the slat or are painted with a color different from the color of the slat. Optionally, the longitudinal projections can be replaced with longitudinal depressions. | 2009-03-05 |
20090057639 | FENCE TERMINATION BRACKET - A termination bracket that can be used with a wire and polymer composite ribbon fencing has a longitudinal channel member including a first main surface and a pair of outwardly protruding sides extending along opposite edges. A clasp member extends laterally at least part way between the two sides. The clasp member defines at least one opening, each opening receiving a vice element adapted to capture an end of a longitudinally extending polymer composite fencing element. The wire and polymer composite ribbon has a width substantially equal to the spacing between the outwardly protruding sides. | 2009-03-05 |
20090057640 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory element and fabrication method thereof is provided. The phase-change memory element comprises an electrode. A first dielectric layer is formed on the substrate. An opening passes through the first dielectric layer exposing the electrode. A heater with an extended part is formed in the opening, wherein the extended part protrudes the opening. A second dielectric layer surrounds the extended part of the heater exposing the top surface of the extended part. A phase-changed material layer is formed on the second dielectric layer to directly contact the top of the extended part. | 2009-03-05 |
20090057641 | Phase Change Memory Cell With First and Second Transition Temperature Portions - A phase change memory cell includes first and second electrodes having generally coplanar surfaces spaced apart by a gap and a phase change bridge electrically coupling the first and second electrodes. The phase change bridge may extend over the generally coplanar surfaces and across the gap. The phase change bridge has a higher transition temperature bridge portion and a lower transition temperature portion. The lower transition temperature portion comprises a phase change region which can be transitioned from generally crystalline to generally amorphous states at a lower temperature than the higher transition temperature portion. A method for making a phase change memory cell is also disclosed. | 2009-03-05 |
20090057642 | Memory Device - A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. Also described is a method for making a memory or switching device. The method includes providing a first insulator and configuring the first insulator to provide a mesa. A first conductive layer is provided conforming to the mesa. A phase-change or switching material is provided over a portion of the first conductive layer, and a second conductive layer is provided over the phase-change or switching material. | 2009-03-05 |
20090057643 | PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A phase change memory device is disclosed. A second conductive spacer is under a first conductive spacer. A phase change layer comprises a first portion substantially parallel to the first and second conductive spacers and a second portion on top of the second conductive spacer, wherein the second conductive spacer is electrically connected to the first conductive spacer through the second portion of the phase change layer. | 2009-03-05 |
20090057644 | Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devices - A phase-change memory unit includes a lower electrode on a substrate, a phase-change material layer pattern including germanium-antimony-tellurium (GST) and carbon on the lower electrode, a transition metal layer pattern on the phase-change material layer pattern, and an upper electrode on the first transition metal layer pattern. The phase-change memory unit may have good electrical characteristics. | 2009-03-05 |
20090057645 | Memory element with improved contacts - A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material. | 2009-03-05 |
20090057646 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate | 2009-03-05 |
20090057647 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer. | 2009-03-05 |
20090057648 | High Hole Mobility P-Channel Ge Transistor Structure on Si Substrate - The present disclosure provides an apparatus and method for implementing a high hole mobility p-channel Germanium (“Ge”) transistor structure on a Silicon (“Si”) substrate. One exemplary apparatus may include a buffer layer including a GaAs nucleation layer, a first GaAs buffer layer, and a second GaAs buffer layer. The exemplary apparatus may further include a bottom barrier on the second GaAs buffer layer and having a band gap greater than 1.1 eV, a Ge active channel layer on the bottom barrier and having a valence band offset relative to the bottom barrier that is greater than 0.3 eV, and an AlAs top barrier on the Ge active channel layer wherein the AlAs top barrier has a band gap greater than 1.1 eV. Of course, many alternatives, variations and modifications are possible without departing from this embodiment. | 2009-03-05 |
20090057649 | Assembly of Ordered Carbon Shells on Semiconducting Nanomaterials - In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described. | 2009-03-05 |
20090057650 | Nanoscale wires and related devices - The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like. | 2009-03-05 |
20090057651 | Gated Quantum Resonant Tunneling Diode Using CMOS Transistor with Modified Pocket and LDD Implants - A gated resonant tunneling diode (GRTD) is disclosed including a metal oxide semiconductor (MOS) gate over a gate dielectric layer which is biased to form an inversion layer between two barrier regions, resulting in a quantum well less than 15 nanometers wide. Source and drain regions adjacent to the barrier regions control current flow in and out of the quantum well. The GRTD may be integrated in CMOS ICs as a quantum dot or a quantum wire device. The GRTD may be operated in a negative conductance mode, in a charge pump mode and in a radiative emission mode. | 2009-03-05 |
20090057652 | Multilayer structure with zirconium-oxide tunnel barriers and applications of same - A multilayer structure with zirconium-oxide tunnel barriers. In one embodiment, the multilayer structure includes a first niobium (Nb) layer, a second niobium (Nb) layer, and a plurality of zirconium-oxide tunnel barriers sandwiched between the first niobium (Nb) layer and the second niobium (Nb) layer, wherein the plurality of zirconium-oxide tunnel barriers is formed with N layers of zirconium-oxide, N being an integer greater than 1, and M layers of zirconium, M being an integer no less than N, such that between any two neighboring layers of zirconium-oxide, a layer of zirconium is sandwiched therebetween. | 2009-03-05 |
20090057653 | METHODS FOR SITE-SELECTIVE GROWTH OF HORIZONTAL NANOWIRES, NANOWIRES GROWN BY THE METHODS AND NANODEVICES COMPRISING THE NANOWIRES - Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires. | 2009-03-05 |
20090057654 | SPIN FET AND MAGNETORESISTIVE ELEMENT - A spin FET of an aspect of the present invention includes source/drain regions, a channel region between the source/drain regions, and a gate electrode above the channel region. Each of the source/drain regions includes a stack structure which is comprised of a low work function material and a ferromagnet. The low work function material is a non-oxide which is comprised of one of Mg, K, Ca and Sc, or an alloy which includes the non-oxide of 50 at % or more. | 2009-03-05 |
20090057655 | ORGANIC THIN FILM TRANSISTOR COMPRISING GATE ELECTRODE OF NANOCRYSTALLINE CONDUCTIVE CARBON LAYER, FABRICATION METHOD THEREOF, AND ORGANIC SEMICONDUCTOR DEVICE COMPRISING THE SAME - Provided are an organic thin film transistor (OTFT) and a fabrication method thereof, an organic semiconductor device having the OTFT, and a flexible display device having the OTFT. The OTFT includes a substrate, a gate electrode, an insulating layer, an active layer, and a source/drain electrode. The gate electrode may be made of a nanocrystalline carbon layer. | 2009-03-05 |
20090057656 | Thin film transistor and method for manufacturing the same - One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode and a gate insulator being formed on the insulating substrate, in this order; a source electrode and a drain electrode formed on the gate insulator, surface preparation of the source electrode and the drain electrode being performed with a compound having a functional group with an electron-withdrawing property; and a semiconductor film formed on the gate insulator, the film being formed between the source electrode and the drain electrode. | 2009-03-05 |
20090057657 | Method for forming pattern arrays and organic devices including the pattern arrays - The present invention includes forming a hydrophobic thin film on a substrate, removing a portion of the first hydrophobic thin film to form a first hydrophilic region, coating a first organic solution on the substrate and selectively wetting the first hydrophilic region, drying the first organic solution to form a first organic thin film pattern in the first hydrophilic region, forming a second hydrophobic thin film on the first organic thin film pattern, coating a second organic solution and selectively wetting the second organic solution, and drying the second organic solution to form a second organic thin film pattern. | 2009-03-05 |
20090057658 | ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - An organic thin film transistor substrate includes a substrate, a gate line on a surface of the substrate, a gate insulating layer insulating on the gate line, a data line on the gate insulating layer, an organic thin film transistor connected to the gate line and the data line, the organic thin film transistor including an organic semiconductor layer, a bank-insulating layer positioned at least in part on the data line, the bank-insulating layer including a wall portion which defines a pixel area, and a pixel electrode formed in the pixel area. | 2009-03-05 |
20090057659 | PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGE PICKUP DEVICE, AND MANUFACTURING METHOD OF THE PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less. | 2009-03-05 |
20090057660 | METHOD OF FABRICATING SUBSTRATELESS THIN FILM FIELD-EFFECT DEVICES AND AN ORGANIC THIN FILM TRANSISTOR OBTAINABLE BY THE METHOD - A method for the manufacture of a thin-film field-effect device comprising, on a mechanical support layer, source and drain electrodes (S, D), a layer of semiconductor material (SC) for the formation of a conduction channel, and a gate electrode (G) insulated from the channel region, is described. The method provides for the use of a mechanical support layer in the form of a film (INS) of flexible, electrically-insulating material; for the formation of the source and drain electrodes (S, D) in accordance with a predetermined configuration on a first surface of the insulating film; and for the formation of the gate electrode (G) on the opposite surface of the insulating film (INS) in accordance with a predetermined configuration complementary with the configuration of the source and drain electrodes (S, D), that configuration being achieved by a lithographic technique by selective masking determined by the source and drain electrodes (S, D) which are formed on the first surface of the film (INS). | 2009-03-05 |
20090057661 | Method for Chemical Mechanical Planarization of Chalcogenide Materials - A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing. | 2009-03-05 |
20090057662 | Nanoparticle Semiconductor Device and Method for Fabricating - A low-temperature process for creating a semiconductive device by printing a liquid composition containing semiconducting nanoparticles. The semiconductive device is formed on a polymeric substrate by printing a composition that contains nanoparticles of inorganic semiconductor suspended in a carrier, using a graphic arts printing method. The printed deposit is then heated to remove substantially all of the carrier from the printed deposit. The low-temperature process does not heat the substrate or the printed deposit above 300° C. The mobility of the resulting semiconductive device is between about 10 cm | 2009-03-05 |
20090057663 | Oxide thin film transistor and method of manufacturing the same - An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer. | 2009-03-05 |
20090057664 | E-BEAM INSPECTION STRUCTURE FOR LEAKAGE ANALYSIS - A testing structure, and method of using the testing structure, where the testing structure comprised of at least one of eight test structures that exhibits a discernable defect characteristic upon voltage contrast scanning when it has at least one predetermined structural defect. The eight test structures being: 1) having an Active Area (AA)/P-N junction leakage; 2) having an isolation region to ground; 3) having an AA/P-N junction and isolation region; 4) having a gate dielectric leakage and gate to isolation region to ground; 5) having a gate dielectric leakage through AA/P-N junction to ground leakage; 6) having a gate dielectric to ground and gate/ one side isolation region leakage to ground; 7) having an oversized gate dielectric through AA/P-N junction to ground leakage; and 8) having an AA/P-N junction leakage gate dielectric leakage. | 2009-03-05 |
20090057665 | Power managing semiconductor die with reduced power consumption - According to one exemplary embodiment, a power managing semiconductor die with reduced power consumption includes a power island including an event detection block and an event qualification block. The event detection block is configured to activate the event qualification block in response to an input signal initiated by an external event. The input signal is coupled to the event detection block, for example, via a bond pad situated in an I/O region of the power managing semiconductor die. The event qualification block is configured to determine if the external event is a valid external event. The event qualification block resides in a thin oxide region and the event detection block resides in a thick oxide region of the semiconductor die. The power managing semiconductor die further includes a power management unit configured to activate the event qualification block in response to power enable signal outputted by the event detection block. | 2009-03-05 |
20090057666 | PIXEL STRUCTURE AND FABRICATING METHOD THEREOF - A pixel structure and a fabrication method thereof are provided. A substrate with a light-shielding layer and a flat layer formed thereon is provided. A first photomask process is conducted to pattern a first metal layer and a semiconductor layer for forming a source, a drain, a channel layer, a data line and a first pad. A second photomask process is conducted to pattern the protection layer, the second metal layer and the gate dielectric layer for forming a gate, a scan line and a second pad, and a part of the drain is exposed. A third photomask process is conducted to pattern a transparent conductive layer for forming a pixel electrode. | 2009-03-05 |
20090057667 | Display device and method for fabricating the same - Provided are a display device and a fabricating method thereof. The display device includes a substrate, a gate line, a common line, common electrodes, an insulating layer, a data line, a drain electrode, and pixel electrodes. The gate line is disposed in a first direction. The common line is disposed substantially parallel to the gate line. The common electrodes branch from the common line. The insulating layer covers the gate line, the common line, and the common electrodes. The channel patterns are disposed on the insulating layer to correspond to the gate electrode. The data line is disposed in a second direction. The drain electrode is electrically connected with the channel pattern. The pixel electrodes are formed of an opaque metal. Thus, the display device may improve contrast ratio. | 2009-03-05 |
20090057668 | Display Element and Method of Manufacturing the Same - A display element and a method of manufacturing the same are provided. The method comprises the following steps: forming a first patterned conducting layer with a gate on a substrate and a dielectric layer thereon; forming a patterned semiconductor layer on the dielectric layer, wherein the patterned semiconductor layer has a channel region, a source and a drain, and wherein the source and the drain lie on the opposite sides of the channel region; selectively depositing a barrier layer, which only wraps the patterned semiconductor layer; forming a second patterned conducting layer on the barrier layer and above the source and the drain. In the display element manufactured by the method, the barrier layer only wraps the patterned semiconductor layer. | 2009-03-05 |
20090057669 | Electro-Optical Device and Electronic Apparatus - An electro-optical device includes a switching element with a gate electrode provided opposite to the channel region. The gate electrode has a ring-shaped structure that surrounds a junction region between the channel region and a source/drain region. | 2009-03-05 |
20090057670 | Semiconductor Device and Process for Production Thereof - Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area. | 2009-03-05 |
20090057671 | THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME - Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer. | 2009-03-05 |
20090057672 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film. | 2009-03-05 |
20090057673 | Pixel structure of solid-state image sensor - To eliminate uneven distribution of electrons caused by variation in threshold voltages of gates for distributing electrons and to have sensitivity in a long wavelength in a pixel structure of a solid-state image sensor of a charge sorting method, the structure has: a photodiode that generates electrons by photoelectric conversion; a plurality of charge-storage sections that store electrons generated in the photodiode; and a gate structure that is arranged between the photodiode and the charge-storage sections and controls transfer of electrons generated in the photodiode to the plurality of charge-storage sections, in which the gate structure is made up of plural stages of gates, and the plural stages of gates at least have: a front stage gate that is arranged adjacent to the photodiode and controls readout of electrons generated in the photodiode; and a rear stage gate that is arranged adjacent to the plurality of charge-storage sections on the rear stage of the front stage gate and performs control of distributing electrons read out by readout control of the front stage gate to the plurality of charge-storage sections. | 2009-03-05 |
20090057674 | Thin film transistor, light-emitting display device having the same and associated methods - A thin film transistor (TFT) includes an N-type oxide semiconductor layer on a substrate, a gate electrode spaced apart from the N-type oxide semiconductor layer by a gate dielectric layer, a source electrode contacting a first portion of the N-type oxide semiconductor layer, and a drain electrode contacting a second portion of the N-type oxide semiconductor layer. The first and second portions each have a doped region containing ions of at least one Group 1 element, and the ions of the at least one Group 1 element in the doped region may have a work function that is less than that of an N-type oxide semiconductor material included in the semiconductor layer. | 2009-03-05 |
20090057675 | Display device and electronic appliance including the display device - To provide a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics. A base substrate having an insulating surface to which a single-crystal semiconductor layer is attached is divided into strips and is used for a driver circuit of a display device. Alternatively, a base substrate having an insulating surface to which a plurality of single-crystal semiconductor layers is attached is divided into strips and is used for a driver circuit of a display device. Accordingly, a driver circuit corresponding to a size of a display device can be used for the display device, and a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics can be provided. | 2009-03-05 |
20090057676 | THIN FILM SEMICONDUCTOR DEVICE - A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness. | 2009-03-05 |
20090057677 | FERROELECTRIC DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a ferroelectric device includes Step S | 2009-03-05 |
20090057678 | Method of Forming an Integrated Circuit and Integrated Circuit - A method of forming an integrated circuit, the method including forming at least one patterned gate stack on a substrate including a substrate surface; forming an amorphous substrate region in the substrate by implanting a first material in the substrate; and implanting a getter material to form a getter region within the amorphous substrate region; forming doped implant regions extending from the substrate surface in to the substrate by implanting a second material; and thermally recrystallizing the amorphous substrate region. | 2009-03-05 |
20090057679 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A manufacturing method of a TFT is provided. A polysilicon island, a gate insulating layer and a gate are sequentially formed on a substrate. LDD regions are formed in the polysilicon island below two sides of the gate, while the polysilicon island below the gate is a channel region. A metal oxidation process is performed to form a gate oxidation layer on the gate. A source and a drain are formed in the polysilicon island below two sides of the gate oxidation layer. A dielectric layer is formed on the gate insulating layer. Portions of the dielectric layer and the gate insulating layer are removed to expose a portion of the source and drain, and a patterned dielectric layer and a patterned gate insulating layer are formed. A source and a drain conductive layers electrically respectively connected to the source and the drain are formed on the patterned dielectric layer. | 2009-03-05 |
20090057680 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a thin film integrated circuit at low cost and with thin thickness, which is applicable to mass production unlike the conventional glass substrate or the single crystalline silicon substrate, and a structure and a process of a thin film integrated circuit device or an IC chip having the thin film integrated circuit. A manufacturing method of a semiconductor device includes the steps of forming a first insulating film over one surface of a silicon substrate, forming a layer having at least two thin film integrated circuits over the first insulating film, forming a resin layer so as to cover the layer having the thin film integrated circuit, forming a film so as to cover the resin layer, grinding a backside of one surface of the silicon substrate which is formed with the layer having the thin film integrated circuit, and polishing the ground surface of the silicon substrate. | 2009-03-05 |
20090057681 | THIN-FILM DEVICE, METHOD FOR MANUFACTURING THIN-FILM DEVICE, AND DISPLAY - A method for manufacturing a thin-film device includes forming a separation layer on a substrate, forming a base insulating layer on the separation layer, forming a thin-film device layer on the base insulating layer, bonding a transfer layer including the base insulating layer and the thin-film device layer to a transfer body with an adhesive, causing intralayer delamination or interfacial delamination in the separation layer, and removing the transfer layer from the substrate. The thin-film device layer includes a first wiring sublayer which is located at the bottom of the thin-film device layer and which is in contact with the base insulating layer, a dielectric sublayer which is in contact with a surface of the first wiring sublayer, a semiconductor sublayer electrically insulated from the first wiring sublayer with the dielectric sublayer, and a second wiring sublayer formed subsequently to the semiconductor sublayer. The first wiring sublayer includes electrodes located at the bottom of the thin-film device layer. | 2009-03-05 |
20090057682 | ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, TELEVISION RECEIVER, MANUFACTURING METHOD OF ACTIVE MATRIX SUBSTRATE, FORMING METHOD OF GATE INSULATING FILM - In an active matrix substrate of the present invention, a gate insulating film for covering a gate electrode of each transistor has a thin portion, having a reduced film thickness, which is provided on a part overlapped on the gate electrode, and the thin portion is formed by using the gate electrode, on which the thin portion is overlapped, as a mask, and each transistor has a first drain electrode section and a second drain electrode section which are respectively provided on both sides of a source electrode, and the thin portion has two edges opposite to each other, and the first drain electrode section is overlapped on the one edge, and the second drain electrode section is overlapped on the other edge. This makes it possible to provide an active matrix substrate which realizes high display quality while suppressing unevenness of parasitic capacitances (particularly, Cgd) of TFTs in the active matrix substrate whose each TFT has a thin portion in its gate insulating film. | 2009-03-05 |
20090057683 | Semiconductor Device and Method of Manufacturing The Semiconductor Device - In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5. | 2009-03-05 |
20090057684 | Nitride semiconductor device and method for producing nitride semiconductor device - A nitride semiconductor device includes: a semiconductor base layer made of a conductive group III nitride semiconductor having a principal plane defined by a nonpolar plane or a semipolar plane; an insulating layer formed on the principal plane of the semiconductor base layer with an aperture partially exposing the principal plane; a nitride semiconductor multilayer structure portion, formed on a region extending onto the insulating layer from the aperture, having a parallel surface parallel to the principal plane of the semiconductor base layer as well as a +c-axis side first inclined surface and a −c-axis side second inclined surface inclined with respect to the principal plane of the semiconductor base layer and including two types of group III nitride semiconductor layers at least having different lattice constants; a gate electrode formed to be opposed to the second inclined surface; a source electrode arranged to be electrically connected with the group III nitride semiconductor layers; and a drain electrode formed on a back surface of the semiconductor base layer opposite to the principal plane. | 2009-03-05 |
20090057685 | BIPOLAR DEVICE AND FABRICATION METHOD THEREOF - In a mesa type bipolar transistor or a thyristor, since carriers injected from an emitter layer or an anode layer to a base layer or a gate layer diffuse laterally and are recombined, reduction in the size and improvement for the switching frequency is difficult. | 2009-03-05 |
20090057686 | SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERTER, DRIVE INVERTER, GENERAL-PURPOSE INVERTER AND SUPER-POWER HIGH-FREQUENCY COMMUNICATION EQUIPMENT USING THE SEMICONDUCTOR DEVICE - In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode. | 2009-03-05 |
20090057687 | LIGHT EMITTING DIODE MODULE - The present invention relates to a light emitting diode (LED) module ( | 2009-03-05 |
20090057688 | OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH | 2009-03-05 |