Entries |
Document | Title | Date |
20080201677 | Integrated Circuit (IC) Chip Input/Output (I/O) Cell Design Optimization Method And IC chip With Optimized I/O Cells - A method of fabricating an integrated circuit (IC) chip. A standard cell macro (e.g., an Off Chip Interface (OCI) cell) is defined with circuit elements identified as in a macro domain. A variable macro boundary is defined for the standard cell macro. Shapes are selectively added to design layers in the macro boundary to occupy existing white space. Each supplemented layer is checked for technology rules violations in the macro boundary. Each layer is also checked for known sensitivities in the macro boundary. | 08-21-2008 |
20080201678 | Method and apparatus for placement and routing cells on integrated circuit chips - Methods and apparatuses to place and route cells on integrated circuit chips along paths. In one aspect of the invention, methods to layout an integrated circuit are based on placing and routing cells along paths. In one embodiment, a method to layout an integrated circuit including: routing a wire to connect a first cell of the integrated circuit and a second cell of the integrated circuit; and placing a third cell of the integrated circuit after the wire is routed to connect the first cell and the second cell. In one example, the first, second and third cells are on a first path; and, the third cell is connected to one of the first and second cells on the first path by only one net. The first path is selected from a set of paths; and the first and second cells are placed before the wire is routed to connect the first cell and the second cell. Timing is analyzed using a route of the wire connecting the first cell and the second cell to select a second path from the set of paths before a cell is placed on the second path. | 08-21-2008 |
20080216038 | Timing Driven Force Directed Placement Flow - Techniques for placement of integrated circuit elements include global placement, detailed placement, timing closure, and routing. The integrated circuit is described by a netlist specifying interconnections of morphable devices. The detailed placement uses, for example, Simultaneous Dynamical Integration, wherein the morphable-devices correspond to nodes influenced by forces, including timing forces. The timing forces are derived, for example, from a timing graph; path delay; slack; and drive resistance of the elements. The timing closure uses timing-driven buffering and timing-driven resizing to reduce maximum delay and/or transition time, and/or to fix hold time. Nets having high capacitance and/or fanout, and timing critical nets are preferentially processed. Timing-driven buffering applies buffering solutions to segments of route trees, combines solutions of adjoining segments, and prunes sets of solutions. Timing-driven resizing morphably replaces selected elements with upsized versions thereof. | 09-04-2008 |
20080235642 | METHOD AND APPARATUS FOR LOCALIZED PLANNING IN AN INTEGRATED CIRCUIT - A method for an improved circuit design is provided. The method comprises the steps of: provide a core ring around a circumference of a circuit design; determining at least two stages of the circuit design; identifying a set of macros for at least one stage; and placing the set of macros within an area of the circuit. | 09-25-2008 |
20080244489 | METHOD AND APPARATUS FOR DESIGNING A THREE-DIMENSIONAL INTEGRATED CIRCUIT - A method of designing a three-dimensional integrated circuit includes dividing two-dimensional layout data of a circuit formed on a semiconductor substrate into a plurality of layout block data in order to re-arrange in different layers, generating layout block data reversing one of the layout block data of two folded layers arranged vertically adjacent to each other, alternately arranging the reversed layout block data and non-reverse block layout data to form a plurality of layers vertically overlapped, selecting at least one from interconnects included in a plurality of layout block data of the circuit and ranging over plural layers so as to be mutually and functionally collected together with respect to at least one of time delay, interconnect length and block configuration, and re-arranging the selected interconnect using a via connecting an upper layer and an under layer of the folded interconnect. | 10-02-2008 |
20080263491 | Method for Optimizing Organizational Floor Layout and Operations - A computer-automated method for analyzing an organizational floorplan layout, and making recommendations for modifying the layout to optimize productivity, and efficiency of operations conducted within the modified layout includes the following method steps. Gathering raw performance measure date comprising performance measures known to quantify the floorplan layout productivity and efficiency of operations, performing statistical analyses on the raw performance measure data and comparing different areas in the floorplan layout using results of the statistical analyses, and generating proximity data as a result of the comparing. The method includes comparing different resources needed to carry out planned operations, including using results of the statistical analyses, and their interdependencies, calculating and evaluating costs associated with operating in accordance with floorplan layout, including using the resources allocation data, and transportation methods and by generating cost data as a result calculating and evaluating. As a result, opportunities for modifying the layout are identified and recommended, which may be used in their entirety or in part to improve operation efficiencies and effectiveness. | 10-23-2008 |
20080270964 | Integrated Power Supply System Analysis System, Integrated Power Supply System Analysis Method, and Multilayer Printed Circuit Board - Information related to a structure of a multilayer printed circuit board, a physical constant and a mesh is input (Step S | 10-30-2008 |
20080282211 | METHODOLOGY TO IMPROVE TURNAROUND FOR INTEGRATED CIRCUIT DESIGN - A method of designing a layout for manufacturing an integrated circuit is provided, in which computationally intensive portions of the design process, such as simulation of an image transferred through a mask design, or simulation of electrical characteristics of a circuit, are performed more efficiently by only performing such computations on single instance of computational subunits that have an identical geometrical context. Thus, rather than performing such computations based on the functional layout, for which typical design process steps result in significant flattening of the functional hierarchy, and therefore increase the cost of computation, the invention performs simulations on computational subunits stored in a hierarchy based on geometrical context, which minimizes the cost of simulation. The resulting simulation results are subsequently assembled according to the functional layout. | 11-13-2008 |
20080288905 | Method and Apparatus for Congestion Based Physical Synthesis - A computer implemented method, apparatus, and computer usable program product for modifying a circuit design are provided in the illustrative embodiments. A set of candidate areas within the circuit design is identified for making a change to the circuit design. A cost associated with each candidate area in the set of candidate areas is determined to form a set of costs. The cost associated with a candidate area is the cost of making the change to the circuit design in the candidate area. Using the set of costs, a candidate area is selected from the set of candidate areas in which to make the change to the circuit design. | 11-20-2008 |
20080301609 | METHOD FOR GENERATION, PLACEMENT, AND ROUTING OF TEST STRUCTURES IN TEST CHIPS - A method of generating and placing of test structures in test chips comprises creating a control data set for one or more device types, generating a test structure layout in response to the control data set, and placing the test structure layout within a given pad array layout of the at least one pad array as a function of a set of keywords. The control data set includes (i) a set of keywords and (ii) parameter geometries for corresponding ones of test structures associated with the set of keywords. The keywords each define at least (a) one or more pad allocations for each test structure of a given device type, (b) a number quantity of test structures for the given device type, and (c) placement information of the test structures relative to one or more pad allocations of at least one pad array. The pad array layout is configured for enabling a fabrication of corresponding test structures in test chips. | 12-04-2008 |
20080301610 | Semiconductor integrated circuit having reduced cross-talk noise - A semiconductor integrated circuit includes a shielded wire line and a shielding wire line provided for the shielded wire line and divided into a plurality of segments in a longitudinal direction of the shielded wire line. | 12-04-2008 |
20090007042 | VIRTUAL DATA REPRESENTATION THROUGH SELECTIVE BIDIRECTIONAL TRANSLATION - A computer-aided circuit design application has a virtual node feature and a design tool. The virtual node feature is adapted to access design specification information in a first data format and to represent the accessed design specification information as a virtual data node object within a list of node objects in a second data format. The design tool is operable on the list of node objects and the virtual data node object. | 01-01-2009 |
20090037862 | Operational Cycle Assignment in a Configurable IC - Some embodiments provide a method of designing a configurable integrated circuit (“IC”) with several configurable circuits. The method receives a design having several sets of operations for the configurable circuits to perform in different operational cycles. For at least a first set of operations that has a start operation and an end operation, the method assigns a particular operation in the first set to a first operational cycle based at least partially on the position of the particular operation with respect to the start and end operations. | 02-05-2009 |
20090044162 | Semiconductor integrated circuit device and fabrication method thereof - A semiconductor integrated circuit device and a fabrication method thereof are disclosed, for effective suppression of a temperature increase therein that is caused by heat generation of a semiconductor element. The semiconductor integrated circuit device includes a semiconductor element, a multi-layer wiring structure and a heat conduction part. The semiconductor element is formed on a support substrate. The multi-layer wiring structure is formed in an insulation film on the support substrate and includes at least one connection hole and at least one metal wiring layer. The heat conduction part is formed of the same conductive materials as the connection hole and the metal wiring layer and extends toward an upper layer side along a path different from a wiring path including a connection hole and a metal wiring for signal transmission. | 02-12-2009 |
20090064072 | METHOD AND APPARATUS FOR PLACING AN INTEGRATED CIRCUIT DEVICE WITHIN AN INTEGRATED CIRCUIT LAYOUT - A system that places an integrated circuit (IC) device within an IC chip layout is presented. During operation, the system receives the IC device to be placed within the IC chip layout, wherein the IC chip layout includes one or more continuous rows of diffusion. Next, the system places the IC device within a continuous row of diffusion. The system then determines whether the IC device is to be electrically isolated from other IC devices. If so, the system inserts one or more isolation devices within the continuous row of diffusion so that the IC device can be electrically isolated from other IC devices. The system then biases the one or more isolation device so that the IC device is electrically isolated from other IC devices within the continuous row of diffusion. | 03-05-2009 |
20090064073 | METHOD FOR DIFFUSION BASED CELL PLACEMENT MIGRATION - A method for cell placement in an integrated circuit design that uses a calculated diffusion velocity determined from a density value in order to relocate the cells until the cell placement reduces the density below a predetermined threshold. The method acts to control the movement of different cells to reduce the density of the cells prior to legalization of the cell placement. | 03-05-2009 |
20090064074 | SYSTEM AND COMPUTER PROGRAM PRODUCT FOR DIFFUSION BASED CELL PLACEMENT MIGRATION - A system and computer program product for cell placement in an integrated circuit design that uses a calculated diffusion velocity determined from a density value in order to relocate the cells until the cell placement reduces the density below a predetermined threshold. The method acts to control the movement of different cells to reduce the density of the cells prior to legalization of the cell placement. | 03-05-2009 |
20090070721 | Three dimensional memory in a system on a chip - A 3D memory management system is described involving (a) memory hierarchy with adjustable synchronous DRAM, (b) 3D active memory with integrated logic circuitry, cache and router, (c) reconfigurable memory, (d) adaptive queue processing, (e) data compression processing and (f) multiple memory components in hierarchical configurations. | 03-12-2009 |
20090077516 | Semiconductor integrated device and apparatus for designing the same - A semiconductor integrated device includes a plurality of power system circuit units, a first circuit unit | 03-19-2009 |
20090083686 | Semiconductor integrated circuit device formed by automatic layout wiring by use of standard cells and design method of fixing its well potential - Standard cells without a well potential fixing active region ( | 03-26-2009 |
20090083687 | PRINTED CIRCUIT BOARD DESIGN SUPPORT METHOD AND APPARATUS - A method used for supporting designing of a printed circuit board including a plurality of conductive layers having conductive areas to which a constant potential is applied, includes specifying conductive areas having a predetermined wiring from the conductive areas for each of the plurality of conductive layers, extracting areas that overlap each other in a planar view from the specified conductive areas, specifying an interlayer connection member that electrically connects at least two of the plurality of conductive layers in the extracted area, and clearly specifying an area within a predetermined distance from a center of the specified interlayer connection member and in the extracted area. | 03-26-2009 |
20090089731 | TUNABLE INTEGRATED CIRCUIT DESIGN FOR NANO-SCALE TECHNOLOGIES - The invention discloses a method for tuning nano-scale analog-circuit designs in order to reduce random-device mismatches and optimize said design, where nano-scale devices potentially have large-scale process variations. The method includes providing a tunable circuit topology, wherein each nano-scale device comprises a single component or comprises multiple parallel components. Each component is decomposed into multiple discrete sub-components, wherein each said sub-component either operates in parallel with other like components to effectively operate like one bigger component. The sub-components are subjected to a dynamic-programming process to adaptively select the sub-components to be kept operational, while configuring the nonselected sub-components to be nonoperational, based on the measurement of at least one operational parameter. | 04-02-2009 |
20090100396 | Methods and Systems for Process Compensation Technique Acceleration - Selected cells in a semiconductor chip layout are replaced with corresponding PCT pre-processed cells. Each PCT pre-processed cell represents a particular selected cell having been previously subjected to a cell-level-PCT-processing operation so as to include PCT-based cell layout adjustments. Following replacement of the selected cells in the semiconductor chip layout with corresponding PCT pre-processed cells, a chip-wide PCT processing operation is performed on the semiconductor chip layout for a given chip level. The presence of the PCT pre-processed cells in the semiconductor chip layout serves to accelerate the chip-wide PCT processing of the semiconductor chip layout. The chip-wide PCT processed semiconductor layout for the given chip level is recorded on a persistent storage medium. | 04-16-2009 |
20090144685 | DOUBLE-LAYER INTEGRAL USING A STATIC GREEN'S FUNCTION AND RECTANGULAR BASIS - The present invention a new closed-form double-layer integral for a rectangular basis. It is valid for both self integrals and non-self integrals. In general, the approach of the present invention contains only six (6) terms and is much simpler than indirect closed-form results, which has 24 terms. | 06-04-2009 |
20090172622 | AUTOMATIC BLOCK COMPOSITION TOOL FOR COMPOSING CUSTOM BLOCKS HAVING NON-STANDARD LIBRARY CELLS IN AN INTEGRATED CIRCUIT DESIGN FLOW - An automatic custom block composition tool for composing custom blocks of an integrated circuit (IC) design that may include non-standard library cells. The tool includes program instructions that are executable to create and use a placement control file that includes instructions for use by the custom block composition tool to place the one or more non-standard library cells into the custom block layout. In addition, the program instructions may instantiate a leafcell for each non-standard and each standard library cell included in a netlist. The program instructions may access the placement control file and place each leafcell in a row of the custom block layout according to the placement control file. The program instructions may also pre-route power, clock and critical network signals, and generate a router control file used during remaining routing of the custom block by a conventional router tool. | 07-02-2009 |
20090210842 | Automated Method for Buffering in a VLSI Design - Buffers are placed on selected nets coupled to input and output pins of entities in an IC device. This includes loading selected input and output pins of entities prior to respectively buffering nets of the entities and buffering in successive iterations, which includes setting artificial loads on selected input pins. The buffering in a current iteration is limited to i) buffering nets on the current iteration entity for receivers on the current iteration entity and ii) buffering nets on the current iteration entity directly coupled to respective nets of an immediately adjacent entity that has been buffered already in a preceding one of iterations, but only if the already buffered net is coupled to a receiver on its own net or a receiver on some other already buffered net via nets that have all been buffered via one or more of the preceding iterations. | 08-20-2009 |
20090241082 | Method and System for Generating an Accurate Physical Realization for an Integrated Circuit Having Incomplete Physical Constraints - A method, system and program product are described for implementing an integrated circuit. Synthesis tools and a continuum of physical constraints are used to generate a physical realization of a circuit from a hierarchy of logical circuits. Missing physical constraints are generated based on the behavior of the logical circuits, technology rules, timing constraints, and user controls. These constraints are refined throughout the process to produce an accurate physical realization. Generation of the physical constraints is user-controlled, allowing for a full continuum of input. | 09-24-2009 |
20090249273 | LAYOUT CIRCUIT HAVING A COMBINED TIE CELL - A layout circuit is provided, comprising standard cells, a spare cell, combined tie cells and normal filler cells. The standard cells are disposed and routed on a layout area. The spare cell is added on the layout area and provided for replacing one of the standard cells while adding or changing functions later. The combined tie cells are added on the layout area. The normal filler cells are added on the rest of the layout area. The combined tie cell comprises a tie-high circuit, a tie-low circuit and a capacitance circuit. Some standard cells are disposed near at least one combined tie cell for avoiding routing congestion between the combined tie cells and the replaced standard cell. A circuit layout method is also provided. | 10-01-2009 |
20090282379 | SYSTEM AND METHOD FOR CIRCUIT SCHEMATIC GENERATION - The present invention provides a system and method for generating circuit schematic that includes extracting connectivity data of a plurality of devices from a netlist, categorizing the plurality of devices into groups, placing Schematic Analog Placement Constraints on all the instances by identifying instances among the groups that match with a circuit template (in-built as well as user-specified), creating a BFS instance tree of tree instances, creating a two terminal device clusters and creating instance attachments. Using the constraints during grid based placement and eventually generated schematic which look like analog schematic. | 11-12-2009 |
20090300567 | DESIGN LAYOUT OF PRINTABLE ASSIST FEATURES TO AID TRANSISTOR CONTROL - Exemplary embodiments provide a method for laying out an IC design and the IC design layout. The IC design layout can include one or more gate features placed on an active region including a first pitch (p | 12-03-2009 |
20090307646 | SYSTEMS, DEVICES, AND METHODS FOR SEMICONDUCTOR DEVICE TEMPERATURE MANAGEMENT - Devices, systems, and methods for semiconductor die temperature management are described and discussed herein. An IC device is described that includes at least one intra-die cooling structure. In an embodiment, the IC device includes a semiconductor die formed of integral device layers and further includes at least one coolant reservoir and at least one coolant channel. In an embodiment, the at least one coolant reservoir and at least one coolant channel are disposed wholly within the semiconductor die. In various embodiments, at least one coolant reservoir and at least one coolant channel are constructed and arranged to circulate coolant fluid in proximity to at least one IC device structure in order to decrease and or normalize an operating temperature of the IC device. In other embodiments, systems and methods for designing and/or fabricating IC die that include at least one intra-die cooling structure are provided herein. | 12-10-2009 |
20100011327 | Semiconductor Device Layout Having Restricted Layout Region Including Rectangular Shaped Gate Electrode Layout Features and At Least Eight Transistors - A restricted layout region includes a diffusion level layout including a number of diffusion region layout shapes to be formed within a portion of a substrate of a semiconductor device. The diffusion region layout shapes define at least one p-type diffusion region and at least one n-type diffusion region. The restricted layout region includes a gate electrode level layout defined to pattern conductive features within a gate electrode level above the portion of the substrate. The gate electrode level layout includes rectangular-shaped layout features placed to extend in only a first parallel direction. Some rectangular-shaped layout features form gate electrodes of respective PMOS transistor devices, and some rectangular-shaped layout features form gate electrodes of respective NMOS transistor devices. A total number of the PMOS transistor devices and the NMOS transistor devices in the restricted layout region of the semiconductor device is greater than or equal to eight. | 01-14-2010 |
20100011328 | Semiconductor Device Layout Including Cell Layout Having Restricted Gate Electrode Level Layout with Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Equal Number of PMOS and NMOS Transistors - A restricted layout region includes a diffusion level layout including a number of diffusion region layout shapes that define at least one p-type diffusion region and at least one n-type diffusion region separated by a central inactive region. A gate electrode level layout is defined above the diffusion level layout to include linear-shaped layout features placed to extend in only a first parallel direction. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated from each other by an end-to-end spacing that is substantially equal across the gate electrode level layout and that is minimized to an extent allowed by a semiconductor device manufacturing capability. A number of PMOS transistor devices is equal to a number of NMOS transistor devices in the restricted layout region. The restricted layout region corresponds to an entire gate electrode level of a cell layout. | 01-14-2010 |
20100017766 | Semiconductor Device Layout Including Cell Layout Having Restricted Gate Electrode Level Layout with Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and At Least Eight Transistors - A restricted layout region includes a diffusion level layout including diffusion region layout shapes that define at least one p-type diffusion region and at least one n-type diffusion region separated by a central inactive region. A gate electrode level layout is defined above the substrate portion to include linear-shaped layout features placed to extend in only a first parallel direction. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated from each other by an end-to-end spacing that is substantially equal across the gate electrode level layout and that is minimized to an extent allowed by a semiconductor device manufacturing capability. A total number of PMOS and NMOS transistor devices in the restricted layout region is greater than or equal to eight. The restricted layout region corresponds to an entire gate electrode level of a cell layout. | 01-21-2010 |
20100017767 | Layout of Cell of Semiconductor Device Having Rectangular Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks - A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes. The layout of the cell also includes a gate electrode level layout is defined to include a number of linear-shaped layout features placed to extend in only a first parallel direction. Each of the number of the linear-shaped layout features within the gate electrode level layout of the restricted layout region is rectangular-shaped. The gate electrode level layout includes linear-shaped layout features defined along at least four different lines of extent in the first parallel direction. The layout of the cell also includes a number of interconnect level layouts each of which is defined to pattern conductive features within corresponding interconnect levels above the gate electrode level. | 01-21-2010 |
20100017768 | Layout of Cell of Semiconductor Device Having Rectangular Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Corresponding p-type and n-type Diffusion Regions Separated by Central Inactive Region - A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes to be formed within a portion of a substrate, including a p-type diffusion region layout shape and an n-type diffusion region layout shape separated by a central inactive region. The layout of the cell also includes a gate electrode level layout defined to include a number of linear-shaped layout features placed to extend in only a first parallel direction. Each of the number of the linear-shaped layout features within the gate electrode level layout of the restricted layout region is rectangular-shaped. The gate electrode level layout includes linear-shaped layout features defined along at least four different lines of extent in the first parallel direction. The gate electrode level layout corresponds to an entire gate electrode level of the cell. | 01-21-2010 |
20100017769 | Layout of Cell of Semiconductor Device Having Rectangular Shaped Gate Electrode Layout Features and Equal Number of PMOS and NMOS Transistors - A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes, including p-type and n-type diffusion regions. The layout of the cell also includes a gate electrode level layout is defined to include a number of linear-shaped layout features placed to extend in only a first parallel direction. Each of the number of the linear-shaped layout features within the gate electrode level layout of the restricted layout region is rectangular-shaped. Linear-shaped layout features within the gate electrode level layout extend over one or more of the p-type and/or n-type diffusion regions to form PMOS and NMOS transistor devices. A number of the PMOS transistor devices is equal to a number of the NMOS transistor devices in the cell. | 01-21-2010 |
20100017770 | Layout of Cell of Semiconductor Device Having Rectangular Shaped Gate Electrode Layout Features and Equal Number of PMOS and NMOS Transistors with Corresponding p-type and n-type Diffusion Regions Separated by Central Inactive Region - A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes, including a p-type and an n-type diffusion region separated by a central inactive region. The layout of the cell includes a gate electrode level layout corresponding to an entire gate level of the cell. The gate electrode layout includes a number of linear-shaped layout features placed to extend in only a first parallel direction. Each of the number of the linear-shaped layout features within the gate electrode level layout of the restricted layout region is rectangular-shaped. Linear-shaped layout features within the gate electrode level layout extend over one or more of the p-type and/or n-type diffusion regions to form PMOS and NMOS transistor devices. A number of the PMOS transistor devices is equal to a number of the NMOS transistor devices in the cell. | 01-21-2010 |
20100017771 | Layout of Cell of Semiconductor Device Having Rectangular Shaped Gate Electrode Layout Features and At Least Eight Transistors - A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes, including p-type and n-type diffusion regions. The layout of the cell also includes a gate electrode level layout defined to include a number of linear-shaped layout features placed to extend in only a first parallel direction. Each of the number of the linear-shaped layout features within the gate electrode level layout of the restricted layout region is rectangular-shaped. Linear-shaped layout features within the gate electrode level layout extend over one or more of the p-type and/or n-type diffusion regions to form PMOS and NMOS transistor devices. A total number of the PMOS and NMOS transistor devices in the cell is greater than or equal to eight. | 01-21-2010 |
20100017772 | Layout of Cell of Semiconductor Device Having Rectangular Shaped Gate Electrode Layout Features and At Least Eight Transistors with Corresponding p-type and n-type Diffusion Regions Separated by Central Inactive Region - A layout of a cell of a semiconductor device is disclosed to include a diffusion level layout including a plurality of diffusion region layout shapes, including a p-type and an n-type diffusion region separated by a central inactive region. The layout of the cell includes a gate electrode level layout corresponding to an entire gate level of the cell. The gate electrode layout includes a number of linear-shaped layout features placed to extend in only a first parallel direction. Each of the number of the linear-shaped layout features within the gate electrode level layout of the restricted layout region is rectangular-shaped. Linear-shaped layout features within the gate electrode level layout extend over one or more of the p-type and/or n-type diffusion regions to form PMOS and NMOS transistor devices. A total number of the PMOS and NMOS transistor devices in the cell is greater than or equal to eight. | 01-21-2010 |
20100023906 | Layout of Cell of Semiconductor Device Having Linear Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Minimum End-to-End Spacing - A cell layout of a semiconductor device includes a diffusion level layout including a plurality of diffusion region layout shapes. The cell layout also includes a gate electrode level layout defined to include linear-shaped layout features placed to extend in only a first parallel direction. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated from each other by an end-to-end spacing that is substantially equal across the gate electrode level layout and that is minimized to an extent allowed by a semiconductor device manufacturing capability. The gate electrode level layout includes linear-shaped layout features defined along at least four different lines of extent in the first parallel direction. The cell layout also includes a number of interconnect level layouts each defined to pattern conductive features within corresponding interconnect levels above the gate electrode level of the cell. | 01-28-2010 |
20100023907 | Layout of Cell of Semiconductor Device Having Linear Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Minimum End-to-End Spacing and Having Corresponding p-type and n-type Diffusion Regions Separated by Central Inactive Region - A cell layout of a semiconductor device includes a diffusion level layout including a plurality of diffusion region layout shapes. The cell layout also includes a gate electrode level layout defined to include linear-shaped layout features placed to extend in only a first parallel direction. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated from each other by an end-to-end spacing that is substantially equal across the gate electrode level layout and that is minimized to an extent allowed by a semiconductor device manufacturing capability. The gate electrode level layout includes linear-shaped layout features defined along at least four different lines of extent in the first parallel direction. The cell layout also includes a number of interconnect level layouts each defined to pattern conductive features within corresponding interconnect levels above the gate electrode level of the cell. | 01-28-2010 |
20100023908 | Layout of Cell of Semiconductor Device Having Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Having At Least Eight Transistors and Having Corresponding p-type and n-type Diffusion Regions Separated by Central Inactive Region - A cell layout of a semiconductor device includes a diffusion level layout including a plurality of diffusion region layout shapes, including p-type and n-type diffusion regions separated by a central inactive region. The cell layout also includes a gate electrode level layout for the entire cell defined to include linear-shaped layout features placed to extend in only a first parallel direction. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated from each other by an end-to-end spacing that is substantially equal and minimized across the gate electrode level layout. Linear-shaped layout features within the gate electrode level layout extend over one or more of the p-type and/or n-type diffusion regions to form PMOS and NMOS transistor devices. A total number of the PMOS and NMOS transistor devices in the cell is greater than or equal to eight. | 01-28-2010 |
20100031212 | COMPLEXITY MANAGEMENT FOR VEHICLE ELECTRICAL/ELECTRONIC ARCHITECTURE DESIGN - Disclosed herein are computer aided design (CAD) techniques to implement a unified data schema and graphical user interface (GUI) to link ECU/devices, in-vehicle communications, and vehicle harness information together with respect to architectural relation, performance relation, and cost relation, and to facilitate a designer's understanding and manipulation of this information. The domain-specific information from each domain is converted to objects in this unified data schema and stored in a unified database that is accessible to every domain, so that the impact of the current state in the device domain can be accessed and analyzed by a designer from any domain. This approach enables design data sharing and real-time collaboration between different electrical/electronic (E/E) design domains, thereby facilitating the realization of design data collaboration, design change management, and product lifetime management (PLM) and product data management (PDM) implementation. | 02-04-2010 |
20100031213 | DESIGN INFORMATION GENERATING APPARATUS - A design information generating apparatus that generates design information of a substrate includes a substrate region generating unit that generates a plurality of substrate regions in which the substrate is arranged based on a shape of the substrate included in a design condition, when the design condition of the substrate is obtained; and a design information generating unit that generates the design information by transferring the substrate generated based on the design condition to the plurality of substrate regions after at least one of the substrate regions of the plurality of the substrate regions is inverted. | 02-04-2010 |
20100037194 | Layout of Cell of Semiconductor Device Having Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Having Equal Number of PMOS and NMOS Transistors - A cell layout of a semiconductor device includes a diffusion level layout including a plurality of diffusion region layout shapes, including p-type and n-type diffusion regions. The cell layout also includes a gate electrode level layout defined to include linear-shaped layout features placed to extend in only a first parallel direction. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated from each other by an end-to-end spacing that is substantially equal across the gate electrode level layout and that is minimized to an extent allowed by a semiconductor device manufacturing capability. Linear-shaped layout features within the gate electrode level layout extend over one or more of the p-type and/or n-type diffusion regions to form PMOS and NMOS transistor devices. A number of the PMOS transistor devices is equal to a number of the NMOS transistor devices in the cell. | 02-11-2010 |
20100037195 | Layout of Cell of Semiconductor Device Having Linear Shaped Gate Electrode Layout Features Defined with Minimum End-to-End Spacing and Having Equal Number of PMOS and NMOS Transistors and Having Corresponding p-type and n-type Diffusion Regions Separated by Central Inactive Region - A cell layout of a semiconductor device includes a diffusion level layout including a plurality of diffusion region layout shapes, including p-type and n-type diffusion regions separated by a central inactive region. The cell layout also includes a gate electrode level layout for the entire cell defined to include linear-shaped layout features placed to extend in only a first parallel direction. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated from each other by an end-to-end spacing that is substantially equal and minimized across the gate electrode level layout. Linear-shaped layout features within the gate electrode level layout extend over one or more of the p-type and/or n-type diffusion regions to form PMOS and NMOS transistor devices. A number of the PMOS transistor devices is equal to a number of the NMOS transistor devices in the cell. | 02-11-2010 |
20100050143 | METHOD AND SYSTEM FOR ROUTING - Disclosed is a method, system, and computer program product for routing, modeling routes, and measuring congestion. In some embodiments, Gcells are implemented with reduced number of nodes to facilitate route modeling and congestion measurement. Some embodiments are particularly suitable for direct congestion and routing analysis of diagonal routing paths. In this way, congestion analysis can be directly performed along diagonal boundaries for diagonal routes, without requiring association with Gcell boundaries on Manhattan routing layers. | 02-25-2010 |
20100058265 | Parallel Intrusion Search in Hierarchical VLSI Designs with Substituting Scan Line - Mechanisms are provided for performing intrusion searching of a hierarchical integrated circuit design. These mechanisms may receive the hierarchical integrated circuit design and perform a parallel intrusion search operation, that utilizes a substituting scan line, on the hierarchical integrated circuit design to identify intrusions of geometric objects in the hierarchical integrated circuit design. The mechanisms may further record intrusions of geometric objects in the hierarchical integrated circuit design identified by the parallel intrusion search operation. The parallel intrusion search operation may utilize a plurality of separate intrusion searches executed by the data processing system in parallel on the hierarchical integrated circuit design. | 03-04-2010 |
20100058266 | 3-Stack Floorplan for Floating Point Unit - A 3-stack floorplan for a floating point unit includes: an aligner located in the center of the floating point unit; a frontend located directly above the aligner; a multiplier located directly below the frontend and next to the aligner; an adder located directly next to the multiplier and directly below the aligner; a normalizer located directly above the adder; and a rounder located directly above the normalizer. | 03-04-2010 |
20100077370 | System And Method Of Connecting A Macro Cell To A System Power Supply - A system and method of connecting a macro cell to a system power supply network is disclosed. In a particular embodiment, the method includes determining a distance of an edge of the macro cell from a power line or a ground line of the system power supply network. The method further includes selectively adding at least one line to the system power supply network. | 03-25-2010 |
20100077371 | Semiconductor integrated circuit, layout design method of semiconductor integrated circuit, and layout program product for same - A semiconductor integrated circuit includes multiple cells each containing transistors. The transistors include a gate and diffusion layers. The multiple cells are adjacently formed in a first direction perpendicular to the gate. The distance between the cell border and the adjacent and corresponding diffusion layer, the first direction, is the same. | 03-25-2010 |
20100083208 | METHOD AND SYSTEM FOR PERFORMING PATTERN CLASSIFICATION OF PATTERNS IN INTEGRATED CIRCUIT DESIGNS - Disclosed is an approach for performing pattern classification for electronic designs. One advantage of this approach is that it can use fast pattern matching techniques to classify both patterns and markers based on geometric similarity. In this way, the large number of markers and hotspots that typically are identified within an electronic design can be subsumed and compressed into a much smaller set of pattern families. This significantly reduced the number of patterns that must be individually analyzed, which considerably reduces the quantity of system resources and time needed to analyze and verify a circuit design. | 04-01-2010 |
20100169857 | METHOD FOR DESIGNING A HIGH PERFORMANCE ASIC (APPLICATION-SPECIFIC INTEGRATED CIRCUIT) ACCELERATOR - A method is for designing an accelerator for digital signal processing including defining a software programmable fully pre-laid out macro by pre-laying out with a fixed topology a control logic of the DSP accelerator to obtain a fully pre-laid out control logic. The method further includes defining a hardware programmable partially pre-laid out macro by customizing a configurable layout area, thereby mapping a computational logic based on computation kernels related to an application of the DSP accelerator. A partially pre-laid out computational logic is therefore obtained. | 07-01-2010 |
20100180247 | AWARE MANUFACTURING OF INTEGRATED CIRCUITS - Some embodiments of the invention provide a manufacturing aware process for designing an integrated circuit (“IC”) layout. The process receives a manufacturing configuration that specifies a set of manufacturing settings for a set of machines to be used to manufacture an IC based on the IC layout. The process defines a set of design rules based on the specified manufacturing configuration. The process uses the set of design rules to design the IC layout. Some embodiments of the invention provide a design aware process for manufacturing an integrated circuit (“IC”). The process receives an IC design with an associated set of design properties. The process specifies a manufacturing configuration that specifies a set of manufacturing settings for a set of machines to be used to manufacture the IC, where the specified set of manufacturing settings are based on the set of design properties. The process manufactures the IC based on the manufacturing settings. | 07-15-2010 |
20100199246 | Programmable analog tile configuration tool - A programmable analog tile integrated circuit configuration tool communicates a power management control characteristic query soliciting control requirement information for a novel Power Management Integrated Circuit (PMIC) tile in a Multi-Tile Power Management Integrated Circuit (MTPMIC). The configuration tool receives a user response to the query indicating control requirements across a network. The PMIC tile includes configuration registers. Configuration information bit values stored in the configuration registers control the operational characteristics of the functional circuitry of the tile. The configuration registers of each novel PMIC tile are accessible at pre-defined addresses on a standardized bus of the MTPMIC. In response to the user response, the configuration tool generates appropriate tile configuration information for loading the configuration registers such that the PMIC tile within the MTPMIC is programmed to satisfy the user's control requirements. | 08-05-2010 |
20100199247 | Communicating configuration information across a programmable analog tile to another tile - A programmable analog tile integrated circuit is configured over a standardized bus by communicating tile configuration information from a first integrated circuit tile, through a second integrated circuit tile, to a third integrated circuit tile. Each of the three integrated circuit tiles is part of an integrated circuit. The standardized bus is formed when the tiles are placed adjacent one another. Data bus and control signal conductors of the adjacent tiles line up and interconnect such that each signal conductor is electrically connected to every tile. Tile configuration information may be written to a selected register identified by an address in any selected one of the tiles using the data bus and control lines, regardless of the relative physical locations of the tile sending and the tile receiving the information. Thus, tile configuration information may pass from one tile to another tile, through any number of intermediate tiles. | 08-05-2010 |
20100235799 | METHOD AND APPARATUS FOR GENERATING A FLOORPLAN USING A REDUCED NETLIST - One embodiment provides a system comprising methods and apparatuses that generate a floorplan for a hierarchical circuit design. More specifically, the system can receive a non-reduced netlist description for the hierarchical circuit design, and generate a reduced netlist which includes the interface logic elements of the netlist. The system can then generate the floorplan by using the reduced netlist as input. Note that the amount of computational resources and time required to generate a floorplan is substantially reduced because the system generates the floorplan using the reduced netlist instead of using the non-reduced netlist. | 09-16-2010 |
20100262943 | EFFICIENT PROVISION OF ALIGNMENT MARKS ON SEMICONDUCTOR WAFER - A semiconductor wafer includes multi chip areas each including two or more device chip areas and arranged in an X-axis direction and a Y-axis direction, a plurality of scribe lines formed parallel to the X axis and the Y axis such as to separate the device chip areas from each other, and one or more alignment marks formed in each of the multi chip areas on the scribe lines between adjacent ones of the device chip areas included in one multi chip area, the one or more alignment marks being fewer than the device chip areas in each of the multi chip areas and used for positioning of the semiconductor wafer. | 10-14-2010 |