Entries |
Document | Title | Date |
20080241987 | METHOD FOR FABRICATING A SILICON SOLAR CELL STRUCTURE HAVING SILICON NITRIDE LAYERS - Devices, solar cell structures, and methods of fabrication thereof, are disclosed. | 10-02-2008 |
20080241988 | METHOD FOR FABRICATING A SILICON SOLAR CELL STRUCTURE HAVING A GALLIUM DOPED P-SILICON SUBSTRATE - Devices, solar cell structures, and methods of fabrication thereof, are disclosed. | 10-02-2008 |
20080254566 | SURFACE-EMISSION SEMICONDUCTOR LASER DEVICE - A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film. | 10-16-2008 |
20100015754 | METHOD AND APPARATUS TO FORM THIN LAYERS OF PHOTOVOLTAIC ABSORBERS - A method and a system are provide for forming planar precursor structures which are subsequently converted into thin film solar cell absorber layers. A precursor structure is first formed on the front surface of the foil substrate and then planarized through application of force or pressure by a smooth surface to obtain a planar precursor structure. The precursor structure includes at least one of a Group IB material, Group IIIA material and Group VIA material. The planar precursor structures are reacted to form planar and compositionally uniform thin film absorber layers for solar cells. | 01-21-2010 |
20100029036 | THIN-FILM DEVICES FORMED FROM SOLID GROUP IIIA PARTICLES - Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form. | 02-04-2010 |
20100041178 | Demounting of Inverted Metamorphic Multijunction Solar Cells - A method of forming a multifunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; attaching a surrogate second substrate over the third solar subcell and removing the first substrate; and etching a first trough around the periphery of the solar cell to the surrogate second substrate so as to form a mesa structure on the surrogate second substrate and facilitate the removal of said solar cell from the surrogate second substrate. | 02-18-2010 |
20100075457 | METHOD OF MANUFACTURING STACKED-LAYERED THIN FILM SOLAR CELL WITH A LIGHT-ABSORBING LAYER HAVING BAND GRADIENT - A method of manufacturing a stacked-layered thin film solar cell with a light-absorbing layer having a band gradient is provided. The stacked-layered thin film solar cell includes a substrate, a back electrode layer, a light-absorbing layer, a buffer layer, a window layer, and a top electrode layer stacked up sequentially. The light-absorbing layer has a band gradient structure and is essentially a group I-III-VI compound, wherein the group III elements at least include indium (In) and aluminum (Al). Moreover, the Al/In ratio in the upper half portion of the light-absorbing layer is greater than that in the lower half portion of the light-absorbing layer, wherein the upper half portion is proximate to a light incident surface. | 03-25-2010 |
20100120192 | SYNTHESIS OF I-III-VI2 NANOPARTICLES AND FABRICATION OF POLYCRYSTALLINE ABSORBER LAYERS - A method for preparing III-VI | 05-13-2010 |
20100151618 | Growth Substrates for Inverted Metamorphic Multijunction Solar Cells - A method of manufacturing a solar cell by providing a gallium arsenide carrier with a prepared bonding surface; providing a sapphire substrate; bonding the gallium arsenide carrier and the sapphire substrate to produce a composite structure; detaching the bulk of the gallium arsenide carrier from the composite structure, leaving a gallium arsenide growth substrate on the sapphire substrate; and depositing a sequence of layers of semiconductor material forming a solar cell on the growth substrate. For some solar cells, the method further includes mounting a surrogate second substrate on top of the sequence of layers of semiconductor material forming a solar cell; and removing the growth substrate. | 06-17-2010 |
20100151619 | Recessed Germanium (Ge) Diode - A photodiode is formed in a recessed germanium (Ge) region in a silicon (Si) substrate. The Ge region may be fabricated by etching a hole through a passivation layer on the Si substrate and into the Si substrate and then growing Ge in the hole by a selective epitaxial process. The Ge appears to grow better selectively in the hole than on a Si or oxide surface. The Ge may grow up some or all of the passivation sidewall of the hole to conformally fill the hole and produce a recessed Ge region that is approximately flush with the surface of the substrate, without characteristic slanted sides of a mesa. The hole may be etched deep enough so the photodiode is thick enough to obtain good coupling efficiencies to vertical, free-space light entering the photodiode. | 06-17-2010 |
20100233842 | METHOD FOR CREATING NONEQUILIBRIUM PHOTODETECTORS WITH SINGLE CARRIER SPECIES BARRIERS - A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers. | 09-16-2010 |
20100261307 | PATTERNING ELECTRODE MATERIALS FREE FROM BERM STRUCTURES FOR THIN FILM PHOTOVOLTAIC CELLS - A method for forming a thin film photovoltaic device having patterned electrode films includes providing a soda lime glass substrate with an overlying lower electrode layer comprising a molybdenum material. The method further includes subjecting the lower electrode layer with one or more pulses of electromagnetic radiation from a laser source to ablate one or more patterns associated with one or more berm structures from the lower electrode layer. Furthermore, the method includes processing the lower electrode layer comprising the one or more patterns using a mechanical brush device to remove the one or more berm structures followed by treating the lower electrode layer comprising the one or more patterns free from the one or more berm structures. The method further includes forming a layer of photovoltaic material overlying the lower electrode layer and forming a first zinc oxide layer overlying the layer of photovoltaic material. | 10-14-2010 |
20100330734 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - In a manufacturing process of a solar cell comprising an amorphous silicon unit in which a p-type layer, an i-type layer, and an n-type layer are layered, in a step of forming the p-type layer, a doping concentration of a p-type dopant included in the p-type layer is increased as a distance from the i-type layer is increased, and in particular, a high-absorption amorphous silicon carbide layer and a low-absorption amorphous silicon carbide layer are consecutively formed while a state of plasma generation is maintained. | 12-30-2010 |
20110020978 | SODIUM DOPING METHOD AND SYSTEM OF CIGS BASED MATERIALS USING LARGE SCALE BATCH PROCESSING - A method of processing a plurality of photovoltaic materials in a batch process includes providing at least one transparent substrate having an overlying first electrode layer and an overlying copper species based absorber precursor layer within an internal region of a furnace. The overlying copper species based absorber precursor layer has an exposed face. The method further includes disposing at least one soda lime glass comprising a soda lime glass face within the internal region of the furnace such that the soda lime glass face is adjacent by a spacing to the exposed face of the at least one transparent substrate. Furthermore, the method includes subjecting the at least one transparent substrate and the one soda lime glass to thermal energy to transfer one or more sodium bearing species from the soda lime glass face across the spacing into the copper species based absorber precursor layer via the exposed face. | 01-27-2011 |
20110027938 | METHOD OF FABRICATING THIN FILM SOLAR CELL AND APPARATUS FOR FABRICATING THIN FILM SOLAR CELL - Disclosed is a method of fabricating a thin film solar cell including introducing a reaction solution into a reaction chamber, fixing a supporter onto a loader, disposing the loader in the reaction chamber to immerse the supporter into the reaction solution, and heating the supporter and coating a buffer layer. In addition, an apparatus of fabricating a thin film solar cell including a reaction chamber mounted with an inlet of a reaction solution and an outlet of waste water, and a loader disposed in the reaction chamber and being capable of moving up and down, is disclosed. | 02-03-2011 |
20110039368 | METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM - A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition. | 02-17-2011 |
20110136294 | Plasma-Treated Photovoltaic Devices - A method of manufacturing a thin film photovoltaic device includes depositing a first compound semiconductor layer on a substrate and exposing the device to plasma, the plasma treating the layer. | 06-09-2011 |
20120034732 | METHOD OF OPTIMIZING THE BAND EDGE POSITIONS OF THE CONDUCTION BAND AND THE VALENCE BAND OF A SEMICONDUCTOR MATERIAL FOR USE IN PHOTOACTIVE DEVICES - The present invention relates to a semiconductor compound having the general formula A | 02-09-2012 |
20120040491 | METHOD FOR JOINING A FILM ONTO A SUBSTRATE - A method for joining a film onto a substrate comprises: a step (A) of floating the film on an interface between an aqueous liquid and a water-insoluble liquid; a step (B) of immersing the substrate into the aqueous liquid; a step (C) of stacking the substrate onto said one surface of the film in the aqueous liquid; a step (D) of immersing the stacked substrate and film into the water-insoluble liquid with maintaining the substrate being stacked on the film to adhere the film to the substrate; and a step (E) of drawing up the stacked substrate and film from the water-insoluble liquid with maintaining the substrate being stacked on the film to join the film onto the substrate. | 02-16-2012 |
20120070937 | Method for Producing Compound Semiconductor, Method for Manufacturing Photoelectric Conversion Device, and Solution for Forming Semiconductor - A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat. | 03-22-2012 |
20120094428 | MANUFACTURING METHOD OF COMPOUND SEMICONDUCTOR SOLAR CELL - Provided is a manufacturing method of a compound semiconductor solar cell. The method includes; preparing a substrate on which a back electrode is disposed, and sputtering a metal target to form a copper indium gallium selenium (CIGS) thin film on the back electrode under an indium (In) deposition gas atmosphere. | 04-19-2012 |
20120129294 | FAST PHOTOCONDUCTOR - A photoconductor comprising a layer stack with a semiconductor layer photoconductive for a predetermined wavelength range between two semiconductor boundary layers with a larger band gap than the photoconductive semiconductor layer on a substrate, wherein the semiconductor boundary layers comprise deep impurities for trapping and recombining free charge carriers from the photoconductive semiconductor layer, and two electrodes connected to the photoconductive semiconductor layer, for lateral current flow between the electrodes through the photoconductive semiconductor layer. | 05-24-2012 |
20120214274 | Method for Forming A Solar Cell With Tree-Like Nanostructure - The present invention discloses a solar cell having a multi-layered structure that is used to generate, transport, and collect electric charges. The multi-layered nanostructure comprises a cathode, a conducting metal layer, a photo-active layer, a hole-transport layer, and an anode. The photo-active layer comprises a tree-like nanostructure array and a conjugate polymer filler. The tree-like nanostructure array is used as an electron acceptor while the conjugate polymer filler is as an electron donor. The tree-like nanostructure array comprises a trunk part and a branch part. The trunk part is formed in-situ on the surface of the conducting metal layer and is used to provide a long straight transport pathway to transport electrons. The large contact area between the branch part and the conjugate polymer filler provides electron-hole separation. | 08-23-2012 |
20120214275 | OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS AND THYRISTORS - An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype. | 08-23-2012 |
20120302002 | Method of Manufacture of Sodium Doped CIGS/CIGSS Absorber Layers for High Efficiency Photovoltaic Devices - A method for processing a thin-film absorber material with enhanced photovoltaic efficiency includes forming a barrier layer on a soda lime glass substrate followed by formation of a stack structure of precursor layers. The method further includes subjecting the soda-lime glass substrate with the stack structure to a thermal treatment process with at least H | 11-29-2012 |
20130029452 | METHOD OF FORMING OPTOELECTRONIC CONVERSION LAYER - A method of forming optoelectronic conversion layer includes the following steps. A first substrate is provided, and an electrode layer is formed on the first substrate. A first metal precursor layer including one or plural of metal components is formed on the electrode layer. A second substrate is provided, and a nonmetal precursor layer including at least one nonmetal component is formed on the second substrate. The first substrate and the second substrate are then stacked so that the nonmetal precursor layer and the first metal precursor layer are in contact. A thermal treatment is performed to have the first metal precursor layer react with the nonmetal precursor layer for forming an optoelectronic conversion layer. | 01-31-2013 |
20130029453 | NITROGEN IMPLANTED ULTRAFAST SAMPLING SWITCH - A method of manufacturing a semiconductor device suitable for optoelectronic switching in response to light of wavelengths in the range 1200 nm to 1600 nm, comprising forming an undoped InGaAs layer on an insulative semiconductor substrate and bonded on opposed sides to a pair of electrical contact layers adapted to constitute the electrodes of a switch, comprising forming the bulk point defects by irradiating the InGaAs layer with Nitrogen ions. | 01-31-2013 |
20130034932 | Thin-Film Devices Formed From Solid Group IIIA Particles - Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form. | 02-07-2013 |
20130230943 | SOLAR CELL DEVICE AND SOLAR CELL DEVICE MANUFACTURING METHOD - A solar cell device is formed of an insulating layer provided metal substrate and a photoelectric conversion circuit, which includes a photoelectric conversion layer, an upper electrode, and a lower electrode, formed on the substrate. The substrate is constituted by a metal substrate and a porous Al anodized film. The metal substrate is formed of a base material of a metal having a higher rigidity, a high heat resistance, and a smaller linear thermal expansion coefficient than Al and an Al material integrated by pressure bonding to at least one surface thereof, and the porous Al anodized film is formed on a surface of the Al material. | 09-05-2013 |
20130280854 | SINTERED DEVICE - A method for the production of an inorganic film on a substrate, the method comprising: (a) depositing a layer of nanoparticles on the substrate by contacting the substrate with a nanoparticle dispersion; (b) treating the deposited layer of nanoparticles to prevent removal of the nanoparticles in subsequent layer depositing steps; (c) depositing a further layer of nanoparticles onto the preceding nanoparticle layer on the substrate; (d) repeating treatment step (b) and deposition step (c) at least one further time; and (e) optionally thermally annealing the multilayer film produced following steps (a) to (d); wherein the method comprises at least one thermal annealing step in which the layer or layers of nanoparticles are thermally annealed. | 10-24-2013 |
20130323877 | METHODOLOGY FOR FORMING PNICTIDE COMPOSITIONS SUITABLE FOR USE IN MICROELECTRONIC DEVICES - The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate. | 12-05-2013 |
20130330875 | NANONEEDLE PLASMONIC PHOTODETECTORS AND SOLAR CELLS - The present disclosure provides a method for a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400° C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a 4 micrometer (μm) length. Thus, the disclosed nanoneedles are substantially hexagonal needle-like crystal structures that assume a 6° to 9° tapered shape. The 600 nm wide base allows the typical micro-fabrication processes, such as optical lithography, to be applied. Therefore, nanoneedles are an ideal platform for the integration of optoelectronic devices on Si substrates. A nanoneedle avalanche photodiode (APD) grown on silicon is presented in this disclosure as a device application example. The APD attains a high current gain of 265 with only 8V bias. | 12-12-2013 |
20130337601 | STRUCTURES AND METHODS FOR HIGH EFFICIENCY COMPOUND SEMICONDUCTOR SOLAR CELLS - Methods and structures are provided for the growth and separation of a relatively thin layer crystalline compound semiconductor material containing III-V device layers, including but not limited to Gallium Arsenide (GaAs), on top of a crystalline silicon template wafer. Solar cell structures and manufacturing methods based on the crystalline compound semiconductor material are described. | 12-19-2013 |
20140051205 | METHOD FOR MANUFACTURING THIN FILM COMPOUND SOLAR CELL - To manufacture a thin film compound solar cell which can improve the adhesive property of electrodes even when being provided with a base material, and which prevents the base material from being separated. A cell main body configured by laminating a plurality of compound semiconductor layers is formed on a substrate. A rear surface electrode | 02-20-2014 |
20140080249 | HEAT TREATMENT BY INJECTION OF A HEAT-TRANSFER GAS - A heat treatment of a precursor that reacts with temperature, and that comprises in particular the steps of: preheating or cooling a heat-transfer gas to a controlled temperature, and injecting the preheated or cooled gas over the precursor. Advantageously, besides the temperature of the heat-transfer gas, the following are also controlled: the flow rate of the gas at the injection over the precursor, and also a distance between the precursor and an outlet for injection of the gas over the precursor, in order to finely control the temperature of the precursor receiving the injected gas. | 03-20-2014 |
20140093996 | METHOD AND APPARATUS FOR DIFFUSINON INTO SEMICONDUCTOR MATERIALS - A method and apparatus to manage the diffusion process by controlling the diffusion path in the semiconductor fabrication process is disclosed. In one embodiment, a method for processing a substrate comprising steps of forming one or more diffusion areas on said substrate; disposing the substrate in a diffusion chamber, wherein the diffusion chamber is under a vacuum condition and a source material therein is heated and evaporated; and diffusing the source material into the diffusion area on said substrate, wherein said source material travels through a diffusion controlling unit adapted to manage the flux thereof in the diffusion chamber, so concentration of the source material is uniform in a diffusion region above the substrate. | 04-03-2014 |
20140113402 | High Efficiency Flexible Solar Cells For Consumer Electronics - A method comprises providing a base substrate having a surface; disposing layers of III-V semiconductor material on the surface of the base substrate using a chemical vapor deposition technique or a molecular beam epitaxy technique; disposing a stressor layer on the layer of III-V semiconductor material; operatively associating a flexible handle substrate with the stressor layer; and using controlled spalling to separate the layer of III-V semiconductor material from the base substrate to expose a surface of the layer of III-V semiconductor material. | 04-24-2014 |
20140120655 | ENHANCING EFFICIENCY IN SOLAR CELLS BY ADJUSTING DEPOSITION POWER - Methods for forming a photovoltaic device include adjusting a deposition power for depositing a buffer layer including germanium on a transparent electrode. The deposition power is configured to improve device efficiency. A p-type layer is formed on the buffer layer. An intrinsic layer and an n-type layer are formed over the p-type layer. | 05-01-2014 |
20140134783 | TANDEM SOLAR CELL - This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1-x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction. | 05-15-2014 |
20140179055 | METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR PRODUCING IMAGING DEVICE - The method produces a photoelectric conversion element comprising a lower electrode, an electron blocking layer, a photoelectric conversion layer, an upper electrode, and a sealing layer which are laminated on one another in this order. The method includes a step of forming a transparent conductive oxide into a film at a deposition rate of 0.5 Å/s or higher by a sputtering method to form the upper electrode having a stress of −50 MPa to −500 MPa on the photoelectric conversion layer. | 06-26-2014 |
20140315346 | INTERFACE BETWEEN A I/III/VI2 LAYER AND A BACK CONTACT LAYER IN A PHOTOVOLTAIC CELL - The invention relates to a method of manufacturing a I-III-VI | 10-23-2014 |
20140329355 | Techniques for Enhancing Performance of Photovoltaic Devices - Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu | 11-06-2014 |
20150011042 | METHOD OF MAKING PHOTOVOLTAIC DEVICES INCORPORATING IMPROVED PNICTIDE SEMICONDUCTOR FILMS - The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication. | 01-08-2015 |
20150064838 | SELF-ASSEMBLED ORGANIC MONOLAYER HYBRID MATERIALS AND METHODS THEREOF - Self-assembled monolayer hybrid materials having a modified carboxylic acid deposited from the gas-phase onto a metal oxide substrate, methods of using targeted α-carbon modified carboxylic acids to rapidly deposit activated organic molecules into a self-assembled monolayer on metal oxide substrates, and the self-assembled monolayer hybrid materials capable of being used in various industries, such as optoelectronics and separation science. | 03-05-2015 |
20150318431 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A method for manufacturing a photoelectric conversion device, comprising: a first step of forming a buffer layer on a light absorption layer containing a group I-III-VI compound or a group I-II-IV-VI compound; and a second step of bringing a surface of the buffer layer into contact with a first solution containing sulfide ions or hydrogen sulfide ions. | 11-05-2015 |
20150380596 | CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD - The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium, in this order in a solid phase over a substrate; and a heating step of heating the resulting stack of the layer (A) and the layer (B) to melt the layer (B) into a liquid phase, whereby copper is diffused from the layer (B) into the layer (A) to cause crystal growth; wherein the layer (A) is formed by repeatedly stacking a gallium selenide film (Y) and an indium selenide film (X) in this order and reducing a thickness ratio (Y/X) between the gallium selenide film (Y) and the indium selenide film (X) as the stacking is repeated. | 12-31-2015 |
20160013357 | SOLAR CELL WITH DELTA DOPING LAYER | 01-14-2016 |
20160064593 | METHOD AND APPARATUS FOR DEPOSITING COPPER-INDIUM-GALLIUM SELENIDE (CuInGaSe2-CIGS) THIN FILMS AND OTHER MATERIALS ON A SUBSTRATE - An apparatus for deposition of a plurality of elements onto a solar cell substrate that comprises: a housing; a transporting apparatus to transport the substrate in and out of the housing; a first tubing apparatus to deliver powders of a first elements to the housing; a first source material tube located outside of the housing and joined to a feeder tube of the tubing apparatus; a valve located inside of the first source material tube sufficient to block access between the first source material tube and the first feeder tube; a first heating tube located inside of the housing and connected to the first feeder tube; a similar second tubing apparatus to deliver powders of a second elements to the housing; a loading station for loading the substrate onto the transporting apparatus; one or more thermal sources to heat the housing and the first and second heating tube. | 03-03-2016 |