Class / Patent application number | Description | Number of patent applications / Date published |
438054000 | Thermally responsive | 70 |
20080220557 | SENSOR MANUFACTURE WITH DATA STORAGE - A biometric sensing device includes a sensor manufacture for sensing a biometric stimulus. The sensor manufacture is also configured to persistently store data electronically, such as security data. | 09-11-2008 |
20090098678 | VACUUM JACKETED ELECTRODE FOR PHASE CHANGE MEMORY ELEMENT - A memory device having a vacuum jacket around the first electrode element for improved thermal isolation. The memory unit includes a first electrode element; a phase change memory element in contact with the first electrode element; a dielectric fill layer surrounding the phase change memory element and the first electrode element, wherein the dielectric layer is spaced from the first electrode element to define a chamber between the first electrode element and the dielectric fill layer; and wherein the phase change memory layer is sealed to the dielectric fill layer to define a thermal isolation jacket around the first electrode element. | 04-16-2009 |
20090275164 | BICYCLIC GUANIDINATES AND BRIDGING DIAMIDES AS CVD/ALD PRECURSORS - Precursors for use in depositing metal-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for depositing Ge | 11-05-2009 |
20100129947 | Resistance-variable memory device, method for fabricating the same and memory system including the same - In the method of fabricating the variable-resistance memory device, a substrate including a conductive region is provided, and a preliminary lower electrode is formed on the conductive region. A lower electrode is formed by oxidizing an upper portion of the preliminary lower electrode. A phase-change material layer is formed on the lower electrode. | 05-27-2010 |
20100167444 | FABRICATION METHOD FOR THERMOELECTRIC DEVICE - A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a π shaped thermoelectric device. | 07-01-2010 |
20100173438 | METHOD FOR MANUFACTURING THERMOELECTRIC CONVERTER - A method of manufacturing a thermoelectric converter is provided, wherein an alcohol dispersion liquid comprising a ceramic particle having the average size of 1 to 100 nm and a salt of an element constituting the thermoelectric conversion material is prepared, and thereafter the dispersion liquid is dropped into a solution containing a reducing agent to deposit a raw material particle of the thermoelectric conversion material, which is subsequently subject to heating and sintering. | 07-08-2010 |
20100221861 | Efficient Thermoelectric Device and Associated Method - A high efficiency thermo electric device and associated method of making, the device comprising a multilayer structure of alternating insulator and insulator/metal material that is irradiated across the plane of the layer structure with ionizing radiation. The ionizing radiation produces nanoclusters of the metal material in the layered structure that increase the electrical conductivity and decrease the thermal conductivity thereby increasing the thermoelectric figure of merit. Figures of merit as high as 2.5 have been achieved using layers of co-deposited gold and silicon dioxide interspersed with layers of silicon dioxide. The gold to silicon dioxide ratio was 0.04. 5 MeV silicon ions were used to irradiate the structure. Other metals and insulators may be substituted. Other ionizing radiation sources may be used. The structure tolerates a wide range of metal to insulator ratio. | 09-02-2010 |
20100233837 | THERMO-OPTIC DEVICES PROVIDING THERMAL RECIRCULATION - Thermo-optical devices providing heater recirculation in an integrated optical device are described. The thermo-optical devices include at least one waveguide having a non-linear path length in thermal communication with a thermal device. Methods of fabrication and use are also disclosed. | 09-16-2010 |
20100291724 | METHOD OF PRODUCING HIGH PERFORMANCE PHOTOVOLTAIC AND THERMOELECTRIC NANOSTRUCTURED BULK AND THIN FILMS - Embodiments of the invention provide methods of forming photovoltaic or thermoelectric materials, including photovoltaic or thermoelectric films. In one embodiment, the invention provides a method of forming a photovoltaic material, the method comprising: depositing an inorganic capped nanoparticle solution onto a substrate; and heating the substrate. | 11-18-2010 |
20110020969 | METHOD FOR APPLYING LAYERS ONTO THERMOELECTRIC MATERIALS - A method for applying at least one layer, selected from diffusion barriers, further protective layers, adhesion promoters, solders and electrical contacts, onto thermoelectric materials, is characterized by the fact that the at least one layer is rolled or pressed onto the thermoelectric material at a temperature at which the thermoelectric material is flowable. | 01-27-2011 |
20110059568 | METHOD FOR FABRICATING NANOSCALE THERMOELECTRIC DEVICE - The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency. | 03-10-2011 |
20110065223 | THERMO-ELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars. | 03-17-2011 |
20110081741 | THERMOELECTRIC CONVERSION MODULE AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE - A thermoelectric conversion module includes a laminated body including a plurality of thermoelectric components laminated therein. Each of the thermoelectric components includes an insulating layer, and a thermoelectric conversion element section in which a plurality of p-type thermoelectric conversion material layers and a plurality of n-type thermoelectric conversion material layers are arranged on the insulating layer in a series connection. A step eliminating insulating material layer is arranged to eliminate a step between the thermoelectric conversion element section and a vicinity thereof, in a region between the insulating layers adjacent to each other in a laminating direction, around the p-type thermoelectric conversion material layers and n-type thermoelectric conversion material layers constituting the thermoelectric conversion element section. The thermoelectric conversion element section has a serpentine shape. Thicknesses of the p-type and n-type thermoelectric conversion material layers constituting the thermoelectric conversion element section are greater than the thickness of the insulating layer. | 04-07-2011 |
20110104846 | Thermoelectric 3D Cooling - The invention comprises a 3D chip stack with an intervening thermoelectric coupling (TEC) plate. Through silicon vias in the 3D chip stack transfer electronic signals among the chips in the 3D stack, power the TEC plate, as well as distribute heat in the stack from hotter chips to cooler chips. | 05-05-2011 |
20110111546 | METHOD FOR PRODUCTION OF A THERMOELECTRIC APPARATUS - The invention relates to a method for production of at least one thermoelectric apparatus with the steps of: | 05-12-2011 |
20110117690 | Fabrication of Nanovoid-Imbedded Bismuth Telluride with low dimensional system - A new fabrication method for nanovoids-imbedded bismuth telluride (Bi—Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi—Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions. | 05-19-2011 |
20110143477 | METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE USING A CROSS PATTERNING TECHNIQUE - A method of manufacturing a phase change memory device is provided. A first insulating layer having a plurality of metal word lines spaced apart at a constant distance is formed on a semiconductor substrate. A plurality of line structures having a barrier metal layer, a polysilicon layer and a hard mask layer are formed to be overlaid on the plurality of metal word lines. A second insulating layer is formed between the line structures. Cross patterns are formed by etching the hard mask layers and the polysilicon layers of the line structures using mask patterns crossed with the metal word lines. A third insulating layer is buried within spaces between the cross patterns. Self-aligned phase change contact holes are formed and at the same time, diode patterns formed of remnant polysilicon layers are formed by selectively removing the hard mask layers constituting the cross patterns. | 06-16-2011 |
20110151609 | Method for Forming Thin Film Heat Dissipater - The present invention discloses a method of forming Peltier diodes comprising providing a substrate and forming a conductive pattern over the substrate. An isolation layer is formed over the conductive pattern; followed by forming cavities in the isolation layer and refilling a semiconductor layer into the cavities, thereby forming a first and a second semiconductors, wherein the first and second semiconductors are formed by silicon or III-V group material; A Peltier junction is formed on the isolation layer to connect the first and the second semiconductors, thereby forming the Peltier diodes, wherein electricity is applied to the Peltier diodes for transferring heat. | 06-23-2011 |
20110217804 | THERMALLY ACTIVATED MICROMIRROR AND FABRICATION METHOD - A method for fabricating a micromirror in a wafer, including the steps of: depositing and etching layers forming two arms; etching the wafer such that in the back face only a thin portion of the wafer remains in the region of formation of the micromirror and the arms; performing an anisotropic etch, such that the thin portion remains only in the areas of the micromirror and the arms; and performing an isotropic etch to remove the thin portions under the arms, the etching step for forming the arms being performed following their shape and so as to form holes traversing the arms, the holes being positioned at edges of the region separating the micromirror and the wafer on both the side of the micromirror and the side of the portions of the wafer remaining after the anisotropic etching step. The invention also concerns the micromirror. | 09-08-2011 |
20110217805 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device is disclosed. The method comprises: applying a sensing layer with variation in a secondary attribute according to heat, on a handle wafer; patterning the sensing layer, thus forming a cavity; forming a sensing part pattern having a beam structure in the cavity; forming a light-absorbing layer for converting energy of incident photons into heat, along the sensing part pattern; turning the entire structure over, removing the handle wafer, and thus exposing a rear portion of the sensing part pattern; and forming an additional light-absorbing layer on a rear portion of the light-absorbing layer formed on the sensing part pattern, thereby forming a sensing structure part having a beam structure. The method may further comprises: after the forming of the light-absorbing layer for converting the energy of the incident photons into the heat, forming on the light-absorbing layer a filling layer to fill up the cavity, and after the forming of the additional light-absorbing layer, selectively removing the filling layer and exposing the sensing structure part in a manner to float it over the cavity. | 09-08-2011 |
20110294246 | SILICON DIOXIDE CANTILEVER SUPPORT AND METHOD FOR SILICON ETCHED STRUCTURES - An apparatus includes a semiconductor layer ( | 12-01-2011 |
20120003771 | Method for Producing Thermoelectric Module - A method for producing a thermoelectric module comprises steps of positioning electrodes ( | 01-05-2012 |
20120021551 | THERMOELECTRIC CONVERSION MODULE AND METHOD FOR MANUFACTURING THE SAME - A compact, high-performance thermoelectric conversion module includes a laminate having a plurality of insulating layers, p-type thermoelectric semiconductors and n-type thermoelectric semiconductors formed by a technique for manufacturing a multilayer circuit board, particularly a technique for forming a via-conductor. Pairs of the p-type thermoelectric semiconductors and the n-type thermoelectric semiconductors are electrically connected to each other in series through p-n connection conductors to define thermoelectric conversion element pairs. The thermoelectric conversion element pairs are connected in series through, for example, series wiring conductors. The thermoelectric semiconductors each have a plurality of portions in which the peak temperatures of thermoelectric figures of merit are different from each other. These portions are distributed in the stacking direction of the laminate. | 01-26-2012 |
20120064656 | METHOD FOR FABRICATING THERMO-ELECTRIC GENERATOR - For the present invention, a P-type thermo-electric thin-film layer and a N-type thermo-electric thin-film layer are respectively deposited on two sides of an insulating substrate. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the same exposed side of the insulating substrate, and then a PN junction is formed. This method makes the fabrication simplified without special process for connecting the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer. Due to the features of thin-film thermo-electric material, the performance of thermo-electric generator is improved. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the exposed side of the insulating substrate, so welding is not required in this heating surface side. The performance of thermo-electric generator fabricated in heating surface working temperature is accordingly greatly improved. | 03-15-2012 |
20120225513 | Method of Creating Micro-Scale Silver Telluride Grains Covered with Bismuth Nanoparticles - Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains. | 09-06-2012 |
20120276675 | APPARATUS AND METHOD FOR MEASURING LOCAL SURFACE TEMPERATURE OF SEMICONDUCTOR DEVICE - An apparatus and method is described for measuring a local surface temperature of a semiconductor device under stress. The apparatus includes a substrate, and a reference MOSFET. The reference MOSFET may be disposed closely adjacent to the semiconductor device under stress. A local surface temperature of the semiconductor device under stress may be measured using the reference MOSFET, which is not under stress. The local surface temperature of the semiconductor device under stress may be determined as a function of drain current values of the reference MOSFET measured before applying stress to the semiconductor device and while the semiconductor device is under stress. | 11-01-2012 |
20130034925 | RFID BASED THERMAL BUBBLE TYPE ACCELEROMETER AND METHOD OF MANUFACTURING THE SAME - An RFID based thermal bubble type accelerometer includes a flexible substrate, an embedded system on chip (SOC) unit, an RFID antenna formed on the substrate and coupled to a modulation/demodulation module in the SOC unit, a cavity formed on the flexible substrate, and a plurality of sensing assemblies, including a heater and two temperature-sensing elements, disposed along the x-axis direction and suspended over the cavity. The two temperature-sensing elements, serially connected, are separately disposed at two opposite sides and at substantially equal distances from the heater. Two sets of sensing assemblies can be connected in differential Wheatstone bridge. The series-connecting points of the sensing assemblies are coupled to the SOC unit such that an x-axis acceleration can be obtained by a voltage difference between the connecting points. The x-axis acceleration can be sent by the RFID antenna to a reader after it is is modulated and encoded by the modulation/demodulation module. | 02-07-2013 |
20130040413 | SEMICONDUCTOR THERMOCOUPLE AND SENSOR - Conventional “on-chip” or monolithically integrated thermocouples are very mechanically sensitive and are expensive to manufacture. Here, however, thermocouples are provided that employ different thicknesses of thermal insulators to help create thermal differentials within an integrated circuit. By using these thermal insulators, standard manufacturing processes can be used to lower cost, and the mechanical sensitivity of the thermocouple is greatly decreased. Additionally, other features (which can be included through the use of standard manufacturing processes) to help trap and dissipate heat appropriately. | 02-14-2013 |
20130045557 | DEPOSITION OF POROUS FILMS FOR THERMOELECTRIC APPLICATIONS - An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film. | 02-21-2013 |
20130203201 | Printed Temperature Sensor - A method of producing a temperature sensing device is provided. The method includes forming at least one silicon layer and at least one electrode or contact to define a thermistor structure. At least the silicon layer is formed by printing, and at least one of the silicon layer and the electrode or contact is supported by a substrate during printing thereof. Preferably, the electrodes or contacts are formed by printing, using an ink comprising silicon particles having a size in the range 10 nanometres to 100 micrometres, and a liquid vehicle composed of a binder and a suitable solvent. In some embodiments the substrate is an object the temperature of which is to be measured. Instead, the substrate may be a template, may be sacrificial, or may be a flexible or rigid material. Various device geometries are disclosed. | 08-08-2013 |
20130252366 | ENERGY CONVERSION EFFICIENT THERMOELECTRIC POWER GENERATOR - The energy conversion efficient thermoelectric power generator includes a p-type thermoelectric element and an n-type thermoelectric element positioned adjacent the p-type thermoelectric element defining a gap therebetween, and first and second conductive members electrically connecting opposed top and the bottom ends of the p-type and n-type thermoelectric elements, respectively. The first conductive member forms a hot junction with the top ends of the p-type and n-type thermoelectric elements, and the second conductive member forms a cold junction with the bottom ends of the p-type and n-type thermoelectric elements. The materials and dimensions of the p-type and n-type thermoelectric elements are selected such that a slenderness ratio X of each falls within the range of 0≦X≦1. | 09-26-2013 |
20130280843 | Method for a single precursor ionic exchange to prepare semiconductor nanocrystal n-type thermoelectric material - Herein disclosed is a method of forming a thermoelectric material having an optimized stoichiometry, the method comprising: reacting a precursor material including a population of nanocrystals with a first ionic solution and a second ionic solution to form a reacted mixture. | 10-24-2013 |
20130302935 | SELF-ASSEMBLY APPARATUS, DEVICE SELF-ASSEMBLING METHOD, AND METHOD OF ASSEMBLING THERMOELECTRIC DEVICES - A self-assembly apparatus for assembling a plurality of devices with a predetermined aspect ratio is provided. The self-assembly apparatus includes a guiding element, a vibration device, and a magnetic field inducing device. The guiding element has a mesh structure. The vibration device is coupled to the guiding element and configured to vibrate the guiding element. The magnetic field inducing device is disposed below the guiding element and configured to generate a time-varying magnetic field to rotate each of the devices. Through a collective effect of the vibration of the guiding element, the time-varying magnetic field, and the self-gravity of each of the devices, the devices are positioned on a plate between the guiding element and the magnetic field inducing device through the mesh structure. | 11-14-2013 |
20130309798 | Method For Manufacturing A Thermoelectric Device, Especially Intended To Generate An Electrical Current In An Automotive Vehicle - The invention relates to a method for manufacturing a thermoelectric device, comprising a first circuit ( | 11-21-2013 |
20140004643 | METHOD OF FABRICATING THERMOELECTRIC MATERIAL AND THERMOELECTRIC MATERIAL FABRICATED THEREBY | 01-02-2014 |
20140038336 | THERMAL DETECTOR, THERMAL DETECTION DEVICE, ELECTRONIC INSTRUMENT, AND THERMAL DETECTOR MANUFACTURING METHOD - A thermal detector manufacturing method includes: forming a sacrificial layer on a structure including an insulating layer; forming a support member on the sacrificial layer; forming on the support member a heat-detecting element; forming a first light-absorbing layer so as to cover the heat-detecting element, and planarizing the first light-absorbing layer; forming a contact hole in a portion of the first light-absorbing layer, subsequently forming a thermal transfer member having a connecting portion that connects to the heat-detecting element and a thermal collecting portion having a surface area greater than that of the connecting portion as seen in plan view; forming a second light-absorbing layer on the first light-absorbing layer; and removing the sacrificial layer to form a cavity between the support member and the structure including the insulating layer formed on the surface of the substrate. | 02-06-2014 |
20140073078 | DEVICE FOR CONVERTING ENERGY AND METHOD FOR MANUFACTURING THE DEVICE, AND ELECTRONIC APPARATUS WITH THE DEVICE - The present invention provides an energy converting device, which includes: a base substrate; and a plurality of thermoelectric element structures which are sequentially stacked on the base substrate and electrically interconnected in parallel to one another. | 03-13-2014 |
20140170794 | THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC SEMICONDUCTOR ELEMENT USING THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC MODULE USING THERMOELECTRIC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR SAME - A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb) | 06-19-2014 |
20140273325 | THERMOELECTRIC CONVERSION MODULE AND PRODUCTION METHOD THEREFOR - A production method for a thermoelectric conversion module having a thermoelectric conversion element and an electrode, which are metallurgically bonded together via a porous metal layer. The porous metal layer is made of nickel or silver and has a density ratio of 50 to 90%. | 09-18-2014 |
20140287549 | Method and Pre-Product for Producing a Thermoelectric Module - A method for producing a thermoelectric module with a plurality of thermoelectric leg elements, which are electrically connected in series at opposite ends, includes arranging the leg elements on an electrically conducting plate, connecting the leg elements to the electrically conducting plate, and cutting up the electrically conducting plate into a plurality of conductor tracks, which respectively connect two of the leg elements to one another. From a further aspect, a pre-product for the production of a thermoelectric module by such a method includes an electrically conducting plate with a plurality of conductor track regions for the formation of conductor tracks. The electrically conducting plate has a lower mechanical stability in at least one zone of weakness between two conductor track regions than in the conductor track regions. | 09-25-2014 |
20140315345 | Methods For Thick Films Thermoelectric Device Fabrication - Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions. An advantageous coincidence of material properties makes possible a wide variety of unique microstructures that are easily applied for the fabrication of device structures in general. As an example, a direct bond process is applied to fabricate thermoelectric semiconductor thick films on substrates by printing and subsequent thermal processing to form unique microstructures which can be densified. Bismuth and antimony are directly bonded to flexible nickel substrates. | 10-23-2014 |
20140342488 | Preparation Method of Manufacturing Thermoelectric Nanowires Having Core/Shell Structure - Disclosed is a preparation method of manufacturing a thermoelectric nanowire having a core/shell structure. The preparation method of thermoelectric nanowire includes preparing a substrate provided with an oxide layer formed thereon, and forming a Bi thin film on the oxide layer, heat treating a structure produced during forming the Bi thin film to induce compressive stress due to differences in coefficients of thermal expansion between the substrate, the oxide layer and the Bi thin film, to grow a Bi single crystal nanowire on the Bi thin film, and cooling the substrate of a structure on which the nanowire is grown to a low temperature, and sputtering a thermoelectric material on the Bi single crystal nanowire in a cooled state to manufacture a thermoelectric nanowire having a core/shell structure of Bi/thermoelectric material. | 11-20-2014 |
20140349435 | THERMOELECTRIC SEMICONDUCTOR - A thermoelectric semiconductor includes a matrix element that forms a matrix, and a dopant element having an atomic radius that is at least 1.09 times as large as the atomic radius of the matrix element. | 11-27-2014 |
20140349436 | METHOD FOR MAKING A SPACER IN A PHOTOVOLTAIC SUBSTRATE - A micron gap thermo-photo-voltaic device including a photovoltaic substrate, a heat source substrate, and a plurality of spacers separating the photovoltaic substrate from the heat source substrate by a submicron gap. Each spacer includes an elongated thin-walled structure disposed in a well formed in the heat source substrate and having a top surface less than a micron above the heat source substrate. Also disclosed are methods of making the spacers. | 11-27-2014 |
20140377901 | FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES - Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi | 12-25-2014 |
20150064830 | THERMOELECTRIC DEVICES HAVING REDUCED THERMAL STRESS AND CONTACT RESISTANCE, AND METHODS OF FORMING AND USING THE SAME - A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector. | 03-05-2015 |
20150093850 | PRACTICAL METHOD OF PRODUCING AN AEROGEL COMPOSITE CONTINUOUS THIN FILM THERMOELECTRIC SEMICONDUCTOR MATERIAL - A method is disclosed of constructing a composite material structure, comprised of an aerogel precursor foundation, which is then overlaid throughout its interior with an even and continuous thin layer film of doped thermoelectric semiconductor such that electrical current is transmitted as a quantum surface phenomena, while the cross-section for thermal conductivity is kept low, with the aerogel itself dissipating that thermal conductivity. In one preferred embodiment this is achieved using a modified successive ionic layer adsorption and reaction in the liquid phase. | 04-02-2015 |
20150147842 | ARRAYS OF FILLED NANOSTRUCTURES WITH PROTRUDING SEGMENTS AND METHODS THEREOF - A structure and method for at least one array of nanowires partially embedded in a matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first segment associated with a first end, a second segment associated with a second end, and a third segment between the first segment and the second segment. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. The third segment is substantially surrounded by the one or more fill materials. The first segment protrudes from the one or more fill materials. | 05-28-2015 |
20150325772 | METHODS FOR FORMING THERMOELECTRIC ELEMENTS - The present disclosure provides a method for forming a thermoelectric device, comprising providing a semiconductor substrate and providing a first layer of an etching material adjacent to the semiconductor substrate. The etching material facilitates the etching of the semiconductor substrate upon exposure to an oxidizing agent and a chemical etchant. Next, a second layer of a semiconductor oxide is provided adjacent to the first layer, and the second layer is patterned to form a pattern of holes or wires. The second layer and first layer are then sequentially etched to expose portions of the semiconductor substrate. Exposed portions of the semiconductor substrate are then contacted with an oxidizing agent and a chemical etchant to transfer the pattern to the semiconductor substrate. | 11-12-2015 |
20150357548 | METHOD FOR FORMING A THERMOELECTRIC FILM HAVING A MICRO GROOVE - A method for forming a thermoelectric film having a micro groove includes the following steps: A) forming a plurality of parallel sacrificing wires by electrospinning, a diameter of each sacrificing wire being 100-500 nm; B) coating a thermoelectric film having a thickness of 80-200 nm on a part of a surface of each sacrificing wire; and C) removing the sacrificing wires from the thermoelectric films and thus obtaining the thermoelectric films each having the micro groove, a radio side of each thermoelectric film being open to the surroundings. The thermoelectric films finally prepared can have higher size uniformity without the disadvantage of catalyst residual. Further, the thermoelectric films each have a size smaller than the mean free path of phonons in one dimension, and thus the thermoelectric properties of the thermoelectric films can be improved. | 12-10-2015 |
20160013392 | METHOD OF PRODUCING THERMOELECTRIC CONVERSION ELEMENT AND METHOD OF PREPARATION DISPERSION FOR THERMOELECTRIC CONVERSION LAYER | 01-14-2016 |
20160049571 | LOW THERMAL CONDUCTIVITY THERMOELECTRIC MATERIALS AND METHOD FOR MAKING THE SAME - A method of manufacturing fiber based and syntactic foam based composite type thermally insulating materials that retain high performance thermoelectric properties, and which can be used as thermoelectric generators or Peltier coolers for a wide range of industrial, commercial, residential and military applications. | 02-18-2016 |
20160054160 | VACUUM-CAVITY-INSULATED FLOW SENSORS - A vacuum-cavity-insulated flow sensor and related fabrication method are described. The sensor comprises a porous silicon wall with numerous vacuum-pores which is created in a silicon substrate, a porous silicon membrane with numerous vacuum-pores which is surrounded and supported by the porous silicon wall, and a cavity with a vacuum-space which is disposed beneath the porous silicon membrane and surrounded by the porous silicon wall. The fabrication method includes porous silicon formation and silicon polishing in HF solution. | 02-25-2016 |
20160056144 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween, the insulating film having been formed on a surface of the semiconductor substrate; ion-implanting first impurity ions into the thin film semiconductor layer under a condition where a range of the first impurity ions becomes smaller than a film thickness of the thin film semiconductor layer when being deposited; and selectively ion-implanting second impurity ions into the thin film semiconductor layer with a dose quantity more than a dose quantity of the first impurity ions, in which a diode for detecting temperature is formed by a region into which the first impurity ions have been implanted and a region into which the second impurity ions have been implanted in the thin film semiconductor layer. | 02-25-2016 |
20160072037 | THERMOELECTRIC DEVICES WITH INTERFACE MATERIALS AND METHODS OF MANUFACTURING THE SAME - Thermoelectric devices with interface materials and methods of manufacturing the same are provided. A thermoelectric device can include at least one shunt, at least one thermoelectric element in thermal and electrical communication with the at least one shunt, and at least one interface material between the at least one shunt and the at least one thermoelectric element. The at least one interface material can comprise a plurality of regions comprising a core material with each region separated from one another and surrounded by a shell material. The interface material can be configured to undergo deformation under (i) a normal load between the at least one shunt and the at least one thermoelectric element or (ii) a shear load between the at least one shunt and the at least one thermoelectric element. The deformation can reduce interface stress between the at least one shunt and the at least one thermoelectric element. | 03-10-2016 |
20160099399 | METHOD FOR MANUFACTURING A THERMOELECTRIC MODULE BASED ON A POLYMER FILM - A method of manufacturing a thermoelectric module including a substrate and at least one conductive or semiconductor polymer film deposited on a surface of the substrate, the method including a step of manufacturing the conductive polymer film independently from the surface of the substrate and transferring the conductive polymer film onto the surface of the substrate. The transfer comprises: immersing the conductive polymer film in a transfer bath to obtain a conductive polymer film which is solvated, self-supporting, and capable of matching the shape of the substrate surface; applying the conductive polymer film in its solvated state on the substrate to match the shape of the surface thereof; and drying the solvated conductive polymer film. | 04-07-2016 |
20160104830 | Thin-Film Thermo-Electric Generator and Fabrication Method Thereof - A method of manufacturing a thin-film thermo-electric generator includes the steps of: forming two or more PN junctions each having a three-layer structure; forming a substrate which has a first side and an opposed second side; coupling the PN junctions at the first side of the substrate to define a first group of PN junctions at the first side of the substrate; and providing two electrodes that one of the electrodes is extracted from the first group of PN junctions. Accordingly, each of the PN junctions is formed by depositing an insulating thin-film layer between a P-type thermo-electric thin-film layer and a N-type thermo-electric thin-film layer. | 04-14-2016 |
20160111624 | THERMOELECTRIC DEVICE TECHNOLOGY - A thermoelectric device for use with solar cells or other heat sources. A substrate has a manufactured surface with a plurality of highland features and lowland features. Each highland feature defines a peak adjacent to which there is an interface of two different film regions (formed of two different metals, two different semiconductors, or one metal and one semiconductor). The two film regions diverge away from each other with increasing distance from the interface and terminate at distal end regions. In response to a temperature difference between the interface and the distal end regions, the device produces a voltage. | 04-21-2016 |
20160126440 | METHOD OF PRODUCING NANOPARTICLES, METHOD OF PRODUCING THERMOELECTRIC MATERIAL, AND THERMOELECTRIC MATERIAL - A method of producing nanoparticles in a base material made of a semiconductor material including a base material element, each nanoparticle including the base material element and a heterogeneous element different from the base material element includes: a layering step of alternately layering a first layer and a second layer, the first layer including the heterogeneous element, the second layer not including the heterogeneous element; and an annealing step of forming the nanoparticles in the base material by performing an annealing treatment onto a layered structure including the first layer and the second layer layered on each other. In the layering step, the base material element is included in at least one of the first layer and the second layer, and the second layer is formed to be thicker than the first layer. | 05-05-2016 |
20160146652 | Method of Manufacturing Thermal Flow Meter - An objective of the present invention is, in a thermal flowmeter having a structure including a resin portion formed in the vicinity of a diaphragm structural portion using a mold, to prevent destruction of the diaphragm structural portion at the time of pressing the mold, in a method of manufacturing the thermal flow meter, including: supporting a gas flow measurement element | 05-26-2016 |
20160155925 | METHOD OF FORMING A CMOS-BASED THERMOELECTRIC DEVICE | 06-02-2016 |
20160172572 | METHOD FOR DEPOSITION OF THERMOELECTRIC MATERIAL | 06-16-2016 |
20160181504 | METHOD FOR ROLL-TO-ROLL PRODUCTION OF FLEXIBLE, STRETCHY OBJECTS WITH INTEGRATED THERMOELECTRIC MODULES, ELECTRONICS AND HEAT DISSIPATION | 06-23-2016 |
20160380175 | FORMATION OF A DENSIFIED OBJECT FROM POWDERED PRECURSOR MATERIALS - A method for forming a densified solid object corresponding to a thermoelectric element from a mixture of uncompressed, powdered constituent materials. A powdered precursor material may be selected to cause a shrinkage of at least twenty percent in at least two mutually orthogonal linear dimensions of a densified solid object compared to corresponding dimensions of a mold cavity. In some embodiments, a precursor material is selected to produce a thermoelectric material having electrical and mechanical properties suitable for a thermoelectric module. In some embodiments, at least two thermoelectric elements are electrically connected to conductive plates to form a thermoelectric module. | 12-29-2016 |
20190148618 | METHOD FOR PRODUCING A STACK OF LAYERS FOR A MATRIX THERMAL SENSOR | 05-16-2019 |
438055000 | Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor | 5 |
20090093078 | System and Method for High Temperature Compact Thermoelectric Generator (TEG) Device Construction - A method for creating an array of thermoelectric elements includes applying a first coating of dielectric material to P-type wafers and N-type wafers to form coated P-type wafers and coated N-type wafers. A P/N-type ingot is formed from the coated P-type wafers and the coated N-type wafers. The coated P-type wafers and the coated N-type wafers are alternatingly arranged in the P/N-type ingot. P/N-type wafers comprising P-type elements and N-type elements are sliced from the P/N-type ingot and a second coating of the dielectric material is applied to the P/N-type wafers to form coated P/N-type wafers. Furthermore, a P/N-type array from the coated P/N-type wafers. | 04-09-2009 |
20090291520 | METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS - A manufacturing method is provided for manufacturing a semiconductor apparatus including a main semiconductor device and a subsidiary semiconductor device, which facilitates preventing characteristics variations from causing and reducing the manufacturing costs. The method includes forming p-type well region in the surface portion of single-crystal semiconductor substrate of a main semiconductor device, mounting a single-crystal silicon diode above p-type well region with an insulator film interposed between diode and p-type well region for forming subsidiary semiconductor device, forming an insulator film on the main semiconductor device such that single-crystal silicon diode is covered with insulator film for fixing single-crystal silicon diode to single-crystal semiconductor substrate, and forming a metal film on the main semiconductor device for further forming a cathode side wiring on n-type cathode region in single-crystal silicon diode and an anode side wiring on p-type anode region in single-crystal silicon diode. | 11-26-2009 |
20110256653 | Thermoelectric Modules and Methods for Manufacturing Thermoelectric Modules - A method for manufacturing a thermoelectric module that involves obtaining a first printed circuit board having a first dielectric layer sandwiched between a first metallic substrate and a first electrical conductive layer, obtaining a second printed circuit board that comprises a second dielectric layer sandwiched between a second metallic substrate and a second electrical conductive layer, and positioning a plurality of N-type and P-type thermoelectric elements having first ends and second ends between the first and second electrical conduction layers so that the first ends of the thermoelectric elements are situated on the first electrical conductive layer and the second ends of the thermoelectric elements are situated on the second electrical conductive layer and arranged to form an electrical circuit that alternates between the N-type and P-type thermoelectric elements. | 10-20-2011 |
20140024163 | METHOD AND STRUCTURE FOR THERMOELECTRIC UNICOUPLE ASSEMBLY - Method for assembling thermoelectric unicouples is provided and applied with silicon-based nanostructure thermoelectric legs. The method includes preparing and disposing both n-type and p-type thermoelectric material blocks in alternative columns on a first shunt material. The method includes a sequence of cutting processes to resize the thermoelectric material blocks to form multiple cingulated unicouples each having an n-type thermoelectric leg and a p-type thermoelectric leg bonded to a section of the first shunt material. Additionally, the method includes re-disposing these cingulated unicouples in a serial daisy chain configuration with a predetermined pitch distance and bonding a second shunt material on top. The method further includes performing additional cutting processes to form one or more parallel series of thermoelectric unicouples in daisy chain configuration. The first shunt material is coupled to a cold-side heat sink and the second shunt material is coupled to a hot-side heat sink. | 01-23-2014 |
20160027713 | ESTABLISHING A THERMAL PROFILE ACROSS A SEMICONDUCTOR CHIP - Embodiments of the present invention disclose a semiconductor structure and method for establishing a thermal profile across a semiconductor chip. In certain embodiments, the semiconductor structure comprises a through-silicon via formed in a first semiconductor chip having thermal control circuitry, wherein the through-silicon via is formed in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, and wherein the through-silicon via conducts heat from the thermal control circuitry to the region. In other embodiments, the method comprises forming a through-silicon via in a first semiconductor chip having thermal control circuitry. The method also comprises forming the through-silicon via in a manner to be thermally coupled to the thermal control circuitry and a region of a second semiconductor chip, wherein the through-silicon via conducts heat from the thermal control circuitry to the region. | 01-28-2016 |