Entries |
Document | Title | Date |
20080213929 | Light Emitting Device - An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT ( | 09-04-2008 |
20080213930 | Dual panel-type organic electroluminescent display device and method of fabricating the same - A dual panel-type organic electroluminescent display device includes first and second substrates facing and spaced apart from each other, an array element layer disposed along an inner surface of the first substrate, the array element including a thin film transistor, a connection pattern disposed on the array element layer and electrically connected to the thin film transistor, a color filter layer disposed along an inner surface of the second substrate, the color filter layer including red, green, and blue color filters, an overcoat layer disposed on the color filter layer, the overcoat layer including a hygroscopic material, an organic electroluminescent diode disposed on the overcoat layer and connected to the connection pattern, the organic electroluminescent diode including a first electrode, an organic light-emitting layer, and a second electrode sequentially formed on the overcoat layer, and the organic light-emitting layer emits substantially monochromatic light, and a seal pattern along peripheral portions between the first and second substrates. | 09-04-2008 |
20080213931 | LIGHT EMITTING DEVICE - A light emitting device includes a laminate of a lower electrode layer, an organic light-emitting layer, and an upper transparent electrode layer. In the light emitting device, an auxiliary electrode layer is formed of colloidal nano-sized particles of a conductive metal between the lower electrode layer and the organic light-emitting layer. The auxiliary electrode layer causes the lower electrode layer to be flat and the light emitting efficient to be improved. A light emitting device having a structure in which a transparent electrode layer is formed as the lower electrode layer, and an organic light-emitting layer, an auxiliary electrode layer, and an upper electrode layer are sequentially formed thereon has the same effects. When glass is produced by a sol-gel method using metal alkoxide and the light emitting device is sealed by the glass, it is possible to extend the light emitting period. | 09-04-2008 |
20080220550 | METHOD OF PRODUCING N-TYPE GROUP-13 NITRIDE SEMICONDUCTOR, METHOD OF FORMING CURRENT CONFINEMENT LAYER, METHOD OF PRODUCING SURFACE EMITTING LASER, METHOD OF CHANGING RESISTANCE OF NITRIDE SEMICONDUCTOR AND METHOD OF PRODUCING SEMICONDUCTOR LASER - The object of the present invention is to provide a method of producing an n-type group-13 nitride semiconductor which enables resistance of the n-type group-13 nitride semiconductor to be changed, as well as, a method of producing a laser using the above method to produce a current confinement structure. There is provided a method of producing an n-type group-13 nitride semiconductor, including: preparing an n-type group-13 nitride semiconductor; and irradiating the n-type group-13 nitride semiconductor with light having a wavelength of 350 nm or more to 370 nm or less so as not to change a crystal structure of the n-type group-13 nitride semiconductor before and after the light irradiation, thereby increasing resistance of the n-type group-13 nitride semiconductor. | 09-11-2008 |
20080220551 | DISPLAY PANELS AND FABRICATION METHODS THEREOF - A display panel including a pixel array region. The pixel array region includes a plurality of pixel cells disposed in a matrix configuration. Each pixel cell has an active device. A relative position of a first active device in a first pixel cell among the pixel cells is different from that of a second active device in a second pixel cell among the pixel cells. | 09-11-2008 |
20080220552 | FABRICATING A SPATIAL LIGHT MODULATOR - A high contrast spatial light modulator for display and printing is fabricated by coupling a high active reflection area fill-ratio and non-diffractive micro-mirror array with a high electrostatic efficiency and low surface adhesion control substrate. | 09-11-2008 |
20080227230 | Quantum dot vertical cavity surface emitting laser and fabrication method of the same - A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL. | 09-18-2008 |
20080241979 | Multi-directional light scattering LED and manufacturing method thereof - A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions. | 10-02-2008 |
20080261340 | SURFACE-ROUGHENING METHOD - The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then the masking film is heated to cause its coagulation into discrete particles. Then, using the silver particles as a mask, the wafer surface is dry etched to create pits therein. The deposition of silver on the wafer surface and its thermal coagulation into particles may be either successive or concurrent. | 10-23-2008 |
20080268560 | Method for Producing a Thin-Film Semiconductor Chip - Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point. | 10-30-2008 |
20080274572 | METHOD OF MAKING HIGH EFFICIENCY UV VLED ON METAL SUBSTRATE - A method of fabricating ultraviolet (UV) vertical light-emitting diode (VLED) structures composed of AlInGaN or AlGaN with increased crystalline quality and a faster growth rate when compared to conventional AlInGaN or AlGaN LED structures is provided. This may be accomplished by forming a sacrificial GaN layer above a carrier substrate, and then depositing the light-emitting diode (LED) stack above the sacrificial GaN layer. The sacrificial GaN layer may then be removed in subsequent processing steps. | 11-06-2008 |
20080293174 | Method for forming LED array - A method for forming LED array is disclosed herein. First, a LED wafer, a substrate having a LED epitaxial layer thereon, is cut into a plurality of LED sticks. Then, each space layer is bonded between every two LED sticks to form a LED array. | 11-27-2008 |
20080305566 | Silicon Nanocrystal Embedded Silicon Oxide Electroluminescence Device with a Mid-Bandgap Transition Layer - A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced. | 12-11-2008 |
20080311690 | ELIMINATE RELEASE ETCH ATTACK BY INTERFACE MODIFICATION IN SACRIFICIAL LAYERS - Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity. | 12-18-2008 |
20080311691 | Method of Manufacturing Image Sensor - Provided is a method of manufacturing an image sensor. A microlens of inorganic material can be formed on a substrate by forming a seed microlens having a top surface with height differences, and then blanket etching the seed microlens to form a dome shaped microlens having a curvature following the height differences of the seed microlens. The height differences in the top surface of the seed microlens can be created by implanting nitrogen at different depths into an inorganic layer to form ion implantation regions, and removing the ion implantation regions from the inorganic layer. | 12-18-2008 |
20080311692 | Top Emission Organic Light Emitting Diode Display Using Auxiliary Electrode to Prevent Voltage Drop of Upper Electrode and Method of Fabricating the Same - An organic light emitting diode (OLED) display. The OLED display includes: a lower electrode formed on a layer on an insulating substrate having a thin film transistor. The lower electrode is electrically connected to the thin film transistor. An auxiliary electrode is formed on the same layer as the lower electrode, and a pixel defining layer is formed on edges of the lower electrode, thereby defining an opening which exposes a portion of the lower electrode. An organic layer is formed on the portion of the lower electrode exposed by the opening, and an upper electrode is formed on an entire surface of the insulating substrate and electrically connected to the auxiliary electrode. An edge of the auxiliary electrode may have a taper angle of at least 90°. | 12-18-2008 |
20090011528 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE HAVING PHOTO DIODE - A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor. | 01-08-2009 |
20090017568 | Semiconductor device, electronic device and method for manufacturing semiconductor device - A semiconductor device of the present invention is manufactured by the following steps: forming a single-crystal semiconductor layer over a substrate having an insulating surface; irradiating a region of the single-crystal semiconductor layer with laser light; forming a circuit of a pixel portion using a region of the single-crystal semiconductor layer which is not irradiated with the laser light; and forming a driver circuit for driving the circuit of the pixel portion using the region of the single-crystal semiconductor layer which is irradiated with the laser light. Thus, a semiconductor device using a single-crystal semiconductor layer which is suitable for a peripheral driver circuit region and a single-crystal semiconductor layer which is suitable for a pixel region can be provided. | 01-15-2009 |
20090023235 | Method and Apparatus for Improved Printed Cathodes for Light-Emitting Devices - Rapid thermal processing of printed cathodes for light-emitting polymer devices (LEPDs) to prevent detrimental cathode ink/LEP layer interactions is described herein. The ink layer printed cathode can be thinned curing fabrication using high mesh count screens, calendered mesh screens, high squeegee pressures, high hardness squeegees, high squeegee angles and combinations thereof. Alone, or in combination with, a thinned ink layer, the printed cathode can be cured using reduced time hot plate processing, infrared processing, heated gas flow processing, or combinations thereof. | 01-22-2009 |
20090029495 | Fabrication Method of GaN Power LEDs with Electrodes Formed by Composite Optical Coatings - Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completing the process after scribing, packaging and testing. | 01-29-2009 |
20090029496 | RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME - The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region. | 01-29-2009 |
20090029497 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a H-V group (or II-W-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer. | 01-29-2009 |
20090035884 | METHOD FOR MANUFACTURING SURFACE-EMITTING LASER - Provided is a method for manufacturing a surface-emitting laser capable of forming a photonic crystal structure inside a semiconductor highly accurately and easily without direct bonding. It is a method by laminating on a substrate a plurality of semiconductor layers including an active layer and a semiconductor layer having a photonic crystal structure formed therein, the method including the steps of forming a second semiconductor layer on a first semiconductor layer to form the photonic crystal structure, forming a plurality of microholes in the second semiconductor layer, forming a low refractive index portion in a part of the first semiconductor layer via the plurality of microholes thereby to provide the first semiconductor layer with the photonic crystal structure having a one-dimensional or two-dimensional refractive index distribution in a direction parallel to the substrate, and forming a third semiconductor layer by crystal regrowth from a surface of the second semiconductor layer. | 02-05-2009 |
20090042326 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %. | 02-12-2009 |
20090047749 | Methods of manufacturing thin film transistor and display device - A first patterned conductive layer is formed on a substrate. A dielectric layer, a semiconductor layer, a second conductive layer and a photoresist layer are formed above the first patterned conductive layer. The photoresist layer is patterned using a photomask with multiple different transparencies, and the patterned photoresist layer has at least three different thicknesses. The photoresist layer within the channel region is removed. The second conductive layer within the channel region and part of semiconductor layer are etched to form a channel, source and drain of a thin film transistor. The photoresist layer corresponding to a pixel connecting region and a data pad region is removed to expose a pixel connecting region and a data pad. The remained photoresist layer is reflowed so as to cover the channel. The uncovered semiconductor layer is removed using the reflowed photoresist layer and the patterned second conductive layer as a mask. | 02-19-2009 |
20090053842 | Thin Film Transistor Array Panel And Methods For Manufacturing The Same - Disclosed is a simplified method for manufacturing a liquid crystal display. A gate wire including a gate line, a gate pad, and a gate electrode are formed on a substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, a first portion of the photoresist pattern which is located between the source electrode and the drain electrode is thinner than a second portion which is located on the data wire, and the photoresist layer is totally removed on other parts. The thin portion is made by controlling the amount of irradiating light or by a reflow process to form a thin portion, and the amount of light is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, and thereby the underlying ohmic contact layer is exposed. Then the exposed ohmic contact layer and the underlying semiconductor layer are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the underlying ohmic contact layer pattern. Then, the second portion of the photoresist layer is removed, and red, green, and blue color filters, a pixel electrode, a redundant gate pad, and a redundant data pad are formed. | 02-26-2009 |
20090061551 | Light Emitting Apparatus and Method of Fabricating the Same - Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (R, G, B) of light in one step, film forming accuracy is poor, it is difficult to control the method and therefore, uniformity is not achieved and the constitution is liable to disperse. In contrast thereto, according to the invention, a film comprising a high molecular species material is formed over an entire face of a lower electrode connected to a thin film transistor by a coating method and thereafter, the film comprising the high molecular species material is etched by etching by plasma to thereby enable to selectively form a high molecular species material layer. Further, the organic compound layer is constituted by a material for carrying out luminescence of white color or luminescence of single color and combined with a color changing layer or a coloring layer to thereby realize full color formation. | 03-05-2009 |
20090061552 | LIGHT EMITTING APPARATUS AND METHOD FOR THE SAME - A light emitting apparatus includes a patterned conductive layer, a light emitting component, and a first light diffusion layer, wherein the light emitting component is disposed on the patterned conductive layer and the light emitting component and the patterned conductive layer are embedded into the first light diffusion layer. The method for manufacturing the light emitting apparatus is also disclosed. | 03-05-2009 |
20090068775 | Method for Fabricating Micro-Lens and Micro-Lens Integrated Optoelectronic Devices Using Selective Etch of Compound Semiconductor - Provided are a method of fabricating a microlens using selective etching of a compound semi-conductor and a method of fabricating a photoelectric device having the microlens. The formation of the microlens includes patterning a compound semiconductor layer and removing a lateral surface of the compound semiconductor layer to form a roughly hemispheric lens. The lateral surface of the compound semiconductor layer is removed by a digital alloy method. In particular, the lateral surface of the compound semiconductor layer is removed by a wet etching process. | 03-12-2009 |
20090068776 | Method for fabricating semiconductor substrate for optoelectronic components - Presented is a method for fabricating a semiconductor substrate. The method includes implanting impurity material into the semiconductor substrate, and forming a reflective layer-like zone in the semiconductor substrate that includes the impurity material. | 03-12-2009 |
20090075411 | MANUFACTURING APPARATUS - A manufacturing apparatus is provided, which can improve a utilization efficiency of an evaporation material, reduce manufacturing costs of a light emitting device having an organic light emitting element, and shorten manufacturing time necessary to manufacture a light emitting device. According to the present invention, a multi-chamber manufacturing apparatus having plural film forming chambers includes a first film forming chamber for subjecting a first substrate to evaporation and a second film forming chamber for subjecting a second substrate to evaporation. In each film forming chamber, plural organic compound layers are laminated, thereby improving the throughput. Further, it is possible that the respective substrates in the plural film forming chambers are subjected to evaporation in the same manner in parallel, while another film forming chamber undergoes cleaning. | 03-19-2009 |
20090075412 | VERTICAL GROUP III-NITRIDE LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped Al | 03-19-2009 |
20090093074 | Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches - A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO | 04-09-2009 |
20090098673 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A TFT array panel-including a substrate, a gate line having a gate electrode, a gate insulating layer formed on the gate line, a data line having a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed on the data line and the drain electrode, and a pixel electrode connected to the drain electrode is provided. The TFT array panel further includes a protection layer including Si under at least one of the gate insulating layer and the passivation layer to enhance reliability. | 04-16-2009 |
20090104721 | Deposition Method and Method for Manufacturing Light Emitting Device - An object is to provide a deposition method by which a film having a desired shape can be formed with high productivity. Further, a method for manufacturing a light emitting device by which a light emitting device having high definition can be manufactured with high productivity is provided. Specifically, even in the case of using a large-sized substrate, a method for manufacturing a light emitting device having high definition is provided. By using a deposition target substrate and a shadow mask having a smaller area than the deposition target substrate, the deposition target substrate and the shadow mask are aligned with each other, and an evaporation material is deposited on at least part of the deposition target substrate through a plurality of deposition steps. As an evaporation source, a light absorption layer and a supporting substrate having the evaporation material is preferably used. | 04-23-2009 |
20090104722 | METHOD FOR MANUFACTURING PIXEL STRUCTURE - A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. The dielectric layer has a contact hole disposed over the active device. Next, a first photoresist layer is formed on the dielectric layer over the active device, and a transparent conductive layer is formed to cover a portion of the dielectric layer and the first photoresist layer. The transparent conductive layer is electrically connected to the active device via the contact hole. Besides, the transparent conductive layer is irradiated with use of a laser beam, and a portion of the transparent conductive layer on the first photoresist layer is removed, such that the other portion of the transparent conductive layer on the portion of the dielectric layer forms a pixel electrode. The first patterned photoresist layer is then removed. | 04-23-2009 |
20090124033 | PROCESS FOR PRODUCING ORGANICLIGHT-EMITTING DISPLAY DEVICE - A position displacement between a substrate and a mask which is caused when the substrate and the mask are brought into close contact with each other is suppressed by a magnetic force. In a step of forming an organic compound layer (organic EL element film) included in an organic light-emitting display device on the substrate ( | 05-14-2009 |
20090130787 | Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips - Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer. | 05-21-2009 |
20090130788 | FLAT PANEL DISPLAY DEVICE AND FABRICATING METHOD THEREOF - A top-emitting organic light-emitting device can prevent a voltage drop by electrically coupling a cathode bus line to a cathode electrode. A method for fabricating the same is also disclosed. The flat panel display device comprises an insulating substrate having a pixel region and a non-pixel region, a first electrode arranged in the pixel region. a second electrode arranged in the pixel region and the non-pixel region, an organic emission layer and a charge transporting layer formed between the first electrode and the second electrode of the pixel region, and an electrode line formed in the pixel region and the non-pixel region. The electrode line and the second electrode are electrically and directly coupled to each other in the non-pixel region. | 05-21-2009 |
20090137074 | Method of manufacturing display device - A method of manufacturing a display device includes: preparing a substrate including a first area and a second area, forming a first layer on the first area and the second area, forming a second layer on the first layer of the first area, respectively forming a first electrode layer on the second layer of the first area and the first layer of the second area, forming a reflective layer on the first electrode layer of the first area, and forming a second electrode layer on the reflective layer. | 05-28-2009 |
20090137075 | Method of manufacturing vertical light emitting diode - Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures. | 05-28-2009 |
20090137076 | SURFACE EMITTING SEMICONDUCTOR LASER, ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF ELECTRON DEVICE - A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type Al | 05-28-2009 |
20090142863 | ORGANIC EL DISPLAY PANEL FOR REDUCING RESISTANCE OF ELECTRODE LINES - Method for fabricating an organic EL display panel having an EL region at every cross of first and second electrodes, including the steps of forming a plurality of first electrodes at regular intervals on a transparent substrate, forming an insulating layer in regions other than the EL regions, forming second supplementary electrodes on the insulating layer, forming an electric insulating barrier between adjacent EL regions perpendicular to the first electrodes, forming an organic EL layer in each of the EL regions with a shadow mask, depositing an electrode material on an entire surface inclusive of the organic EL layer, to form a plurality of second electrodes electrically connected to the second supplementary electrodes, and forming a protection film on an entire surface inclusive of the second electrodes. | 06-04-2009 |
20090142864 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE - A method for manufacturing a thin film transistor (TFT) array substrate needs only or even less than six mask processes for manufacturing the TFT array substrate integrated with a color filter pattern. Therefore, the manufacturing method is simpler and the manufacturing cost is reduced. In addition, the manufacturing method needs not to form a contact window in a relative thick film layer such as a planarization layer or a color filter layer, so as to connect the pixel electrode to the source/drain. Thus, the difficulty of the manufacturing process is effectively reduced. | 06-04-2009 |
20090148970 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a manufacturing method of a highly reliable TFT, by which a more refined pattern can be formed through a process using four or three masks, and a semiconductor device. A channel-etched bottom gate TFT structure is adopted in which a photoresist is selectively exposed to light by rear surface exposure utilizing a gate wiring to form a desirably patterned photoresist, and further, a halftone mask or a gray-tone mask is used as a multi-tone mask. Further, a step of lifting off using a halftone mask or a gray-tone mask and a step of reflowing a photoresist are used. | 06-11-2009 |
20090148971 | FORMING METHOD OF CONTACT HOLE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE AND EL DISPLAY DEVICE - When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading to drastically reduced throughput. According to a forming method of a contact hole and a manufacturing method of a semiconductor device, an EL display device and a liquid crystal display device of the invention, an island shape organic film is selectively formed over a semiconductor layer, a conductive layer or an insulating layer, and an insulating film is formed around the island shape organic film to form a contact hole. Therefore, a conventional patterning using a resist is not required, and high throughput and low cost can be achieved. | 06-11-2009 |
20090155940 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY HAVING THIN FILM TRANSISTOR - A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm | 06-18-2009 |
20090155941 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING METHOD THEREOF AND THIN FILM FORMING APPARATUS - A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained. | 06-18-2009 |
20090155942 | HYBRID METAL BONDED VERTICAL CAVITY SURFACE EMITTING LASER AND FABRICATING METHOD THEREOF - Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics. | 06-18-2009 |
20090155943 | Luminescent Ceramic Element For A Light Emitting Device - A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 μm. | 06-18-2009 |
20090162958 | ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME - An array substrate includes a transparent substrate, an organic insulation layer, a pixel electrode, a reflective layer, a light blocking pattern and a switching part. The transparent substrate includes a reflective window that reflects an ambient light and a transmissive window that transmits an artificial light. The organic insulation layer disposed over the transparent substrate becomes thinner gradually at a boundary between the transmissive window and the reflective window. The pixel electrode is formed in the transmissive region. The reflective layer is disposed over the organic insulation layer of the reflective window. The light blocking pattern is disposed at the boundary between the transmissive and reflective windows to prevent a light leakage. The switching part is electrically connected to the pixel electrode to apply an image signal to the pixel electrode. Therefore, a light leakage occurring at boundary is prevented by the light blocking pattern. | 06-25-2009 |
20090186435 | SURFACE ROUGHENING METHOD FOR LIGHT EMITTING DIODE SUBSTRATE - The present invention discloses a surface roughening method for an LED substrate, which uses a grinding technology and an abrasive paper of from No. 300 to No. 6000 to grind the surface of a substrate to form a plurality of irregular concave zones and convex zones on the surface of the substrate. Next, a semiconductor light emitting structure is formed on the surface of the substrate. The concave zones and convex zones can scatter and diffract the light inside LED, reduce the horizontally-propagating light between the substrate and the semiconductor layer, decrease the probability of total reflection and promote LED light extraction efficiency. | 07-23-2009 |
20090186436 | ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME - An array substrate includes a plate, a switching element, an insulating layer and a pixel electrode. The plate includes a pixel region, and the switching element is disposed on the plate. The insulating layer is disposed on the plate to include an opening for a multi-domain disposed in the pixel region and a contact hole. An electrode of the switching element is partially exposed through the contact hole. The pixel electrode is disposed on the insulating layer corresponding to the pixel region, an inner surface of the opening for the multi-domain and an inner surface of the contact hole so that the pixel electrode is electrically connected to the electrode of the switching element. Therefore, the viewing angle and the image display quality of the LCD apparatus are improved, and a manufacturing process is simplified. | 07-23-2009 |
20090191652 | Pixel structure and method for manufacturing the same - A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole. | 07-30-2009 |
20090191653 | Transflective liquid crystal display device and method of fabricating the same - An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor having a gate insulating layer, the thin film transistor connected to the gate line and the data line; a first passivation layer on the thin film transistor, the first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a reflective plate on the first passivation layer; a second passivation layer on the reflective plate; and a pixel electrode on the second passivation layer, the pixel electrode contacting the substrate in the transmissive area through the through hole and contacting the drain electrode through the drain contact hole. | 07-30-2009 |
20090191654 | METHOD OF MANUFACTURING COLOR FILTER SUBSTRATE AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE - A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein. | 07-30-2009 |
20090203158 | METHOD FOR FABRICATING A PHOTONIC CRYSTAL OR PHOTONIC BANDGAP VERTICAL-CAVITY SURFACE-EMITTING LASER - The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro/nano-structured mode selective lateral layer, where the micro/nano-structured layer is obtained by well controlled local etching. The invention enables control of the micro/nano-structured layer thickness with very high precision. In particular, the invention relates to a method for fabricating a VCSEL with a micro/nano-structured mode selective layer for controlling the VCSELs transverse electromagnetic modes. | 08-13-2009 |
20090203159 | METHOD OF PRODUCING SEMICONDUCTOR OPTICAL DEVICE - The invention discloses a method of producing on a substrate a semiconductor optical device having a laser diode and an EA optical modulator. An etched side face of a first semiconductor portion is formed. Then, for example, a first optical confinement layer and an active layer both for the EA optical modulator are grown by the metal organic vapor phase epitaxy method. The first optical confinement layer is grown by supplying hydrogen chloride in addition to a material gas. When the first optical confinement layer is grown, the formation of a thick semiconductor layer along the etched side face, which is an abnormally grown semiconductor layer, is decreased. Subsequently, the active layer for the EA optical modulator is grown. This method can suppress the active layer for the EA optical modulator from bending caused by the abnormally grown semiconductor layer. | 08-13-2009 |
20090203160 | SYSTEM FOR DISPLAYING IMAGES INCLUDING THIN FILM TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate comprising a driving circuit region and a pixel region. First and second active layers are disposed on the substrate in the driving circuit region and in the pixel region, respectively. The first active layer has a grain size greater than that of the second active layer. Two gate structures are disposed on the first and second active layers, respectively, in which each gate structure comprises a stack of a gate dielectric layer and a gate layer. A reflector is disposed on the substrate under the first active layer and insulated from the first active layer. A method for fabricating a system for displaying images including the TFT device is also disclosed. | 08-13-2009 |
20090221106 | Article and method for color and intensity balanced solid state light sources - Subtractive and/or additive techniques can adjust both color and/or intensity in solid wavelength conversion materials. | 09-03-2009 |
20090221107 | Deposition Method and Manufacturing Method of Light-Emitting Device - Part of a material layer is deposited on a deposition target surface of a second substrate by steps of providing a first substrate having a light absorption layer and a material layer in contact with the light absorption layer over one of surfaces; making a surface of the first substrate over which the material layer is formed and a deposition target surface of a second substrate face to each other; depositing part of the material layer on the deposition target surface of the second substrate in such a manner that irradiation with laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer overlapping with the light absorption layer. | 09-03-2009 |
20090221108 | Miniature optical element for wireless bonding in an electronic instrument - A method of manufacturing an optical element including the steps of: forming a through hole in a semiconductor element which has an optical section and an electrode electrically connected to the optical section; and forming a conductive layer extending from a first surface of the semiconductor element on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface. | 09-03-2009 |
20090233390 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided. | 09-17-2009 |
20090239321 | TRANSISTOR ARRAY SUBSTRATE AND DISPLAY PANEL - A transistor array substrate includes a plurality of driving transistors which are arrayed in a matrix on a substrate. The driving transistor has a gate, a source, a drain, and a gate insulating film inserted between the gate, and the source and drain. A plurality of signal lines are patterned together with the gates of the driving transistors and arrayed to run in a predetermined direction on the substrate. A plurality of supply lines are patterned together with the sources and drains of the driving transistors and arrayed to cross the signal lines via the gate insulating film. The supply line is electrically connected to one of the source and the drain of the driving transistor. A plurality of feed interconnections are formed on the supply lines along the supply lines, respectively. | 09-24-2009 |
20090246901 | PROCESS OF MAKING A MICROELECTRONIC LIGHT-EMITTING DEVICE ON SEMI-CONDUCTING NANOWIRE FORMED ON A METALLIC SUBSTRATE - A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires. | 10-01-2009 |
20090246902 | THIOPHENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT - The present invention provides a thiophene derivative useful for a material for forming an organic positive hole transport layer of an organic EL element excellent in light emitting efficiency, water resistance or the like, a polymer having the thiophene derivative as a monomer unit, and an organic EL element. The object can be solved by a thiophene derivative represented by the following formula (1), a polymer comprising the thiophene derivative, and an organic EL element, an organic positive hole transporting layer of which comprises the polymer: | 10-01-2009 |
20090253223 | ORGANIC ELECTROLUMINESCENT ELEMENT MANUFACTURING METHOD - An ink containing an electroluminescent light emitting material is discharged onto a buffer layer. The discharge amount of the ink is larger than a maximum volume where the ink is retained by the surface tension thereof on the top surface of the buffer layer. | 10-08-2009 |
20090263921 | Thin film transistor substrate with color filter and method for fabricting the same - A color filter-on-thin film transistor substrate includes gate data lines crossing each other and defining pixel areas, thin film transistors is located at crossings of gate and data lines, pixel electrodes connected to the thin film transistors and formed within the pixel areas, and stripe-shaped color filters overlapping a plurality of pixel areas and oriented parallel to one of the gate and data lines. | 10-22-2009 |
20090263922 | Reflective Positive Electrode And Gallium Nitride-Based Compound Semiconductor Light-Emitting Device Using The Same - A gallium nitride-based compound semiconductor light-emitting device which has a highly reflective positive electrode that has high reverse voltage and excellent reliability with low contact resistance to the p-type gallium nitride-based compound semiconductor layer. The reflective positive electrode for a semiconductor light-emitting device comprises a contact metal layer adjoining a p-type semiconductor layer, and a reflective layer on the contact metal layer, wherein the contact metal layer is formed of a platinum group metal or an alloy containing a platinum group metal, and the reflective layer is formed of at least one metal selected from the group consisting of Ag, Al, and alloys containing at least one of Ag and Al. Also disclosed is a production method of the reflective positive electrode. | 10-22-2009 |
20090269866 | Method of manufacturing organic light emitting display - A method of manufacturing an organic light emitting display is disclosed. The method includes forming a first electrode and a bank layer including an opening area exposing the first electrode on a target substrate, forming a medium substrate including an organic layer and an absorbing layer on the target substrate, forming a mask including an opening corresponding to the opening area of the bank layer on the medium substrate, emitting light on the medium substrate through the mask and transferring the organic layer on a portion of the first electrode exposed by the bank layer to form an organic light emitting layer on the target substrate, and forming a second electrode on the organic light emitting layer. | 10-29-2009 |
20090269867 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR ELEMENT - The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a high-temperature AlN buffer layer. An AlN buffer layer is formed on top of a growth substrate, and then nitride semiconductor crystals are grown on top of the AlN buffer layer. In a stage of manufacturing the nitride semiconductor, the crystal of the AlN buffer layer is grown at a high temperature of 900° C. or higher. In addition, an Al-source material of the AlN buffer layer is started to be supplied first to a reaction chamber and continues to be supplied without interruption, and then a N-source material is supplied intermittently. | 10-29-2009 |
20090269868 | Methods of Manufacture for Quantum Dot optoelectronic devices with nanoscale epitaxial lateral overgrowth - Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent “Stokes loss” in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes. | 10-29-2009 |
20090269869 | Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same - Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL. | 10-29-2009 |
20090269870 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide. | 10-29-2009 |
20090269871 | EL Display Device and Method of Manufacturing the Same - To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue. | 10-29-2009 |
20090275154 | Method of fabricating light emitting device - A light emitting device wafer is fabricated, having a light emitting layer section, composed of AlGaInP, based on a double heterostructure and a GaP light extraction layer disposed on the light emitting layer portion, having a first main surface thereof appearing on the first main surface of the wafer, so as that a P-rich off-angled {100} surface, having a higher existence rate of P atoms than an exact {100} surface, appears on the first main surface the GaP light extraction layer. The main first surface of the GaP light extraction layer is etched with an etching solution FEA so as to form surface roughening projections. Therefore, it provides a method of fabricating a light emitting device capable of applying surface roughening easily to the GaP light extraction surface having the {100} surface, off-angled to be P-rich, as a main surface thereof. | 11-05-2009 |
20090275155 | Method of fabrication a liquid crystal display device - The present invention relates to a transflective thin film transistor substrate and method of fabricating the same that is adaptive for simplifying its process. The liquid crystal display device includes: first and second substrates; a gate line on the first substrate; a gate insulating film on the first substrate; a data line crossing the gate line to define a pixel area; a thin film transistor connected to the gate line and the data line; an organic insulating film on the gate line, the data line and the thin film transistor, and having a transmission hole in the pixel area; a pixel electrode on the organic insulating film of the pixel area via the transmission hole and connected to the thin film transistor; and a reflective electrode on the pixel electrode having a same edge part as the pixel electrode or an edge part located at inner side from an edge part of the pixel electrode and exposing the pixel electrode of the transmission hole. | 11-05-2009 |
20090275156 | Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof - A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved. | 11-05-2009 |
20090275157 | OPTICAL DEVICE SHAPING - Embodiments described herein provide methods for manufacturing an optical device having shaped sidewalls. A desired substrate shape corresponding to an LED or other optical device can be determined. The optical device can have a substrate comprising an exit face and sidewalls positioned and shaped to reflect light to the exit face to allow light to escape the exit face. A substrate material can be shaped based on the desired substrate shape for one or more LEDs. Shaping can be done using a wire saw, etching, ultrasonic shaping or other technique. | 11-05-2009 |
20090280589 | Method for Manufacturing Light-Emitting Device - An object is to provide a method for manufacturing a light-emitting device with high definition, high light-emitting characteristics, and the long lifetime by employing a method in which a desired evaporation pattern can be formed and an excess evaporation of a material layer which is to be the transfer layer is prevented and in which deterioration of the material or the like is hard to occur in a transfer step. This is a method for manufacturing a light-emitting device, in which irradiation with first light is performed to pattern a material layer over a first substrate which is an evaporation donor substrate and irradiation with second light is performed to evaporate the material layer patterned onto a second substrate which is a deposition target substrate. | 11-12-2009 |
20090280590 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer. | 11-12-2009 |
20090286338 | Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions - A method comprising depositing an ink comprising a nanomaterial, a material capable of transporting charge, and a liquid vehicle from a micro-dispenser onto a layer of a device is disclosed. A method comprising depositing an ink comprising a nanomaterial, a material capable of transporting charge, and a liquid vehicle from a micro-dispenser onto a second material capable of transporting charge in a predetermined arrangement is also disclosed. In certain preferred embodiments, the nanomaterial comprises semiconductor nanocrystals. In certain preferred embodiments, a micro-dispenser comprises an inkjet printhead. Methods for fabricating devices including a nanomaterial and method for fabricating an array of devices including a nanomaterial are also disclosed. An ink composition including a nanomaterial, a material capable of transporting charge, and a liquid vehicle is also disclosed. | 11-19-2009 |
20090286339 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light emitting diode having high light extraction efficiency and a method of manufacturing the same are provided. The LED includes a semiconductor multiple layer including an active layer; a transparent electrode layer formed on the semiconductor multiple layer; and refraction field unit embedded in the transparent electrode layer and formed of a material having a different refractive index than the transparent electrode layer. The method of manufacturing the LED includes: crystallizing and growing a semiconductor multiple layer having an active layer on a substrate; evaporating a first transparent electrode layer onto the semiconductor multiple layer; forming a plurality of grooves in the first transparent electrode layer by patterning and etching the first transparent electrode layer; and evaporating a second transparent electrode layer onto the first transparent electrode layer at an angle to the grooves to form cavities filled with air between the first transparent electrode layer and the second transparent electrode layer. | 11-19-2009 |
20090298209 | OPTOELECTRONIC DEVICE MANUFACTURING - A method for manufacturing an optoelectronic device including a capping layer for improving out-coupling and optical fine-tuning of emission characteristics includes steps of: producing an optoelectronic member for generating photons of a predefined wavelength; producing a light emitting surface on the optoelectronic member; and producing a capping layer on the light emitting surface. | 12-03-2009 |
20090298210 | LIGHT EMITTING DEVICE - An inexpensive light emitting device and inexpensive electric equipment are provided. A substrate on which a semiconductor element or a light emitting element is formed and a color filter are manufactured by separate manufacturing processes, and they are bonded to each other to complete the light emitting device. Thus, the yield of the light emitting device is improved and the manufacture period is shortened. | 12-03-2009 |
20090305445 | Method for Manufacturing Light-Emitting Device - In the present invention, a first substrate which is an evaporation donor substrate is prepared in which a material layer is formed over a patterned reflective layer. A surface of the material layer over the first substrate is irradiated with first light which satisfies one predetermined irradiation condition to pattern the material layer. A surface opposite to the surface of the first substrate is irradiated with second light which satisfies another predetermined irradiation condition to evaporate the patterned material layer onto a second substrate, which is a deposition target substrate. According to the present invention, deterioration of a material included in the material layer can be prevented and a film pattern can be formed on the second substrate with high accuracy. | 12-10-2009 |
20090311812 | SURFACE EMITTING LASER AND MANUFACTURING METHOD THEREOF - A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer. | 12-17-2009 |
20090311813 | METHOD OF FABRICATING PLANAR LIGHT SOURCE - In a method of fabricating a planar light source, a first substrate is formed at first. First electrodes approximately parallel to each other are formed on the first substrate. Sets of first dielectric patterns are formed on the first substrate. Each set of the first dielectric patterns includes at least two first striped dielectric patterns, and each of the first striped dielectric patterns covers one of the first electrodes correspondingly. The edges of the top of each first striped dielectric pattern are raised in a peak shape. A phosphor layer is formed between the first striped dielectric patterns of each set of the first dielectric patterns. A second substrate is formed. The first and second substrates are bound; meanwhile, a discharge gas is injected into the discharge space. | 12-17-2009 |
20090311814 | THIN FILM TRANSISTOR ARRAY PANEL FOR A DISPLAY DEVICE AND A METHOD OF MANUFACTURING THE SAME - A method of manufacturing a thin film transistor array panel includes forming gate lines including gate electrodes on an insulation substrate; forming a gate insulating layer, semiconductor layer, and etch stop layer on the gate lines; etching and patterning the etch stop and semiconductor layers at the same time using photolithography; ashing and partially removing a photoresist film pattern used in the patterning of the etch stop and semiconductor layers; etching the etch stop layer exposed by removed portions of the photoresist film pattern to form etch stop members; depositing ohmic contact and data metal layers onto the etch stop members, etching the ohmic contact and data metal layers at the same time using photolithography to form data lines having source and drain electrodes, and ohmic contact members below the source and drain electrodes; forming a passivation layer on the data lines and drain electrodes; and forming pixel electrodes on the passivation layer. | 12-17-2009 |
20090317927 | METHOD OF CLEANING A PATTERNING DEVICE, METHOD OF DEPOSITING A LAYER SYSTEM ON A SUBSTRATE, SYSTEM FOR CLEANING A PATTERNING DEVICE, AND COATING SYSTEM FOR DEPOSITING A LAYER SYSTEM ON A SUBSTRATE - A method of cleaning a patterning device, the patterning device having at least organic coating material (OLED material) deposited thereon, comprises the step of providing a cleaning plasma for removing the coating material from the patterning device by means of a plasma etching process. During the step of removing the coating material from the patterning device, the temperature of the patterning device does not exceed a critical temperature causing damage to the patterning device, while maintaining a plasma etching rate of at least 0.2 μm/min. In order to generate a pulsed cleaning plasma, pulsed energy is provided. The method can be carried out in a direct plasma etching process or in a remote plasma etching process. Different etching processes may be combined or carried out subsequently. | 12-24-2009 |
20100003774 | METHOD FOR FABRICATING PIXEL STRUCTURE - A pixel structure fabricating method is provided. A gate is formed on a substrate. A gate insulation layer covering the gate is formed on the substrate. A channel layer, a source, and a drain are simultaneously formed on the gate insulation layer above the gate. The gate, channel layer, source, and drain form a thin film transistor (TFT). A passivation layer is formed on the TFT and the gate insulation layer. A black matrix is formed on the passivation layer. The black matrix has a contact opening above the drain and a color filter containing opening. A color filer layer is formed within the color filter containing opening through inkjet printing. A dielectric layer is formed on the black matrix and the color filter layer. The dielectric layer and the passivation layer are patterned to expose the drain. A pixel electrode electrically connected to the drain is formed. | 01-07-2010 |
20100009476 | SUBSTRATE STRUCTURE AND METHOD OF REMOVING THE SUBSTRATE STRUCTURE - A method of removing a substrate structure is described. A plurality of pillars is formed on a substrate by using a photolithography etching process. A group III nitride semiconductor layer is grown on the plurality of pillars. The plurality of pillars is etched to separate the group III nitride semiconductor layer from the substrate by using a chemical etching process. | 01-14-2010 |
20100009477 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes a substrate, at least two light emitting cells located on the substrate and formed by stacking semiconductor material layers, a reflection layer and a transparent insulating layer sequentially stacked between the light emitting cells, and a transparent electrode covering the upper surface of the light emitting cells. | 01-14-2010 |
20100015739 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING IMPROVED LUMINANCE AND MANUFACTURING METHOD THEREOF - In the semiconductor light emitting device manufacturing method, a surface of a substrate, on which the semiconductor light emitting device is to be manufactured, is etched, thus forming a plurality of deep trenches. Semiconductor films are sequentially grown on the surface of the substrate in which the deep trenches are formed. The deep trenches are formed to have predetermined depth, so that, even if the semiconductor films are grown on the surface of the substrate, voids are formed in regions of the substrate in which the trenches are formed, and the voids are used as reflectors for light generated by the semiconductor light emitting device. | 01-21-2010 |
20100022040 | METHOD FOR PRODUCING LIGHT-EMITTING DEVICE - [Object] To restrain color variation in light emitted from a light-emitting device. | 01-28-2010 |
20100022041 | THIN FILM TRANSISTOR ARRAY PANEL INCLUDING LAYERED LINE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu). | 01-28-2010 |
20100029027 | SURFACE EMITTING LASER MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY MANUFACTURING METHOD, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY - Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure. | 02-04-2010 |
20100029028 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE - A method of manufacturing an organic light emitting device by which a pixel defining layer can be easily formed. The method includes: forming a first electrode on a substrate; forming a photoresist layer to cover the first electrode; patterning the photoresist layer and forming a blocking layer so that the blocking layer is on a side of the first electrode opposite to a side facing the substrate; forming a pixel defining layer on the substrate to cover side ends of the first electrode; removing the blocking layer and exposing the side of the first electrode contacting the blocking layer; forming an intermediate layer including an organic light emitting layer on the side of the first electrode that is exposed by removing the blocking layer; and forming a second electrode on the intermediate layer. | 02-04-2010 |
20100029029 | Method of Manufacturing Light Emitting Device - A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided. | 02-04-2010 |
20100035370 | INTEGRATED MILLIMETER WAVE ANTENNA AND TRANSCEIVER ON A SUBSTRATE - A semiconductor chip integrating a transceiver, an antenna, and a receiver is provided. The transceiver is formed on a front side of a semiconductor substrate. At least one through substrate via provides electrical connection between the transceiver and the backside of the semiconductor substrate. The antenna, which is connected to the transceiver, is formed in a dielectric layer on the front side. The reflector plate is connected to the through substrate via, and is formed on the backside. The separation between the reflector plate and the antenna is about the quarter wavelength of millimeter waves, which enhances radiation efficiency of the antenna. An array of through substrate trenches may be formed and filled with a dielectric material to reduce the effective dielectric constant of the material between the antenna and the reflector plate, thereby reducing the wavelength of the millimeter wave and enhance the radiation efficiency. | 02-11-2010 |
20100035371 | Method for Fabricating Light Emitting Device - By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material is irradiated with light having a wavelength, which is absorbed by the inorganic material to heat the mixture, and thereby a film of the organic compound included in the mixture is formed on the first face of the first substrate. Then, the first face of the first substrate and a deposition surface of a second substrate are arranged to be adjacent to or in contact with each other, irradiation with light having a wavelength, which is absorbed by the light-absorbing layer is conducted from a second face side of the first substrate, to heat the organic compound, and thereby at least part of the organic compound is formed as a film on the deposition surface of the second substrate. | 02-11-2010 |
20100041171 | LIGHT-EMITTING DEVICE - To provide a light-emitting device which can emit light with high luminance and high efficiency, and is excellent in durability. The light-emitting device includes an organic compound layer containing a phenanthroline compound represented by the general formula [I] and a carbonate. | 02-18-2010 |
20100041172 | METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention provides a method for fabricating a flip chip semiconductor light-emitting device which includes a substrate and a semiconductor multi-layer structure. The method of the invention includes the steps of: (a) forming a semiconductor multi-layer structure on a first substrate; (b) flip-chip bonding the semiconductor multi-layer structure on a second substrate; (c) removing the first substrate, so as to expose a first surface of the semiconductor multi-layer structure; and (d) forming a plurality of protrusions, arranged periodically, on the first surface. Particularly, the protrusions comprise a first protrusion and a second protrusion adjacent to the first protrusion, the first protrusion and the second protrusion both having a peak, and the second surface having a bottom, wherein the ratio of the vertical distance between one of the peaks and the bottom and the horizontal distance between the two peaks is in between 0.01 and 10. | 02-18-2010 |
20100047944 | Light-emitting element with improved light extraction efficiency, light-emitting device including the same, and methods of fabricating light-emitting element and light-emitting device - Provided are a light-emitting element, a light-emitting device including the same, and methods of fabricating the light-emitting element and the light-emitting device. The light-emitting element includes a substrate on which a dome pattern is formed and a light-emitting structure conformally formed on the dome pattern. The light-emitting structure includes a first conductive layer of a first conductivity type, a light-emitting layer, and a second conductive layer of a second conductivity type sequentially stacked on the substrate. The light-emitting element also includes a first electrode formed on the first conductive layer and a second electrode formed on the second conductive layer. | 02-25-2010 |
20100047945 | Methods Of Forming Particle-Containing Materials - The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a portion of a semiconductor substrate, particles are adhered to the first monolayer, and a second monolayer is formed over the particles. Another aspect of the invention includes a construction containing a semiconductor substrate and a particle-impregnated conductive material over at least a portion of the semiconductor substrate. The particle-impregnated conductive material can include tungsten-containing particles within a layer which includes tantalum or tungsten. | 02-25-2010 |
20100055815 | METHOD OF MANFUACTURING LENS FOR LIGHT EMITTING DIODE PACKAGE - The present invention relates to a method of manufacturing a lens for a light emitting diode package and can reduce a manufacture cost through reduction of material loss and improve productivity through a simple process without an additional device by freely implementing a final lens shape by curing liquid resin in multi-steps. | 03-04-2010 |
20100055816 | Light Emitting Device Manufacturing Apparatus and Method - A disclosed light-emitting-device manufacturing apparatus for manufacturing a light emitting device by forming, on an in-process substrate, an organic layer including an emitting layer includes multiple processing chambers to which the in-process substrate is sequentially transferred to be subjected to multiple substrate processing steps; and multiple substrate transfer chambers, each of which is connected to a different one of the processing chambers. A substrate holding container configured to contain the in-process substrate is sequentially connected to the substrate transfer chambers in order so that the in-process substrate is sequentially transferred to the processing chambers to be subjected to the substrate processing steps. | 03-04-2010 |
20100062554 | Light-emitting device, light-emitting element and method of manufacturing same - Provided are a light-emitting element and a light-emitting device, and methods of fabricating the same. The method of fabricating a light-emitting element includes forming a buffer layer on a substrate and forming photonic crystal patterns and a pad pattern on the buffer layer. Each of the pad pattern and the photonic crystal patterns are made of a metal material, and the pad pattern is physically connected to the photonic crystal patterns. Forming a light-emitting structure includes sequentially stacking a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type on the buffer layer. And the method also includes forming a first electrode that is electrically connected to the first conductive pattern and forming a second electrode that is electrically connected to the second conductive pattern. | 03-11-2010 |
20100068838 | Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substantially spherical substrate particles to the at least one first conductor; converting the substrate particles into a plurality of substantially spherical diodes; forming at least one second conductor coupled to the substantially spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process. | 03-18-2010 |
20100068839 | Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substrate particles to the at least one first conductor; converting the plurality of substrate particles into a plurality of diodes; forming at least one second conductor coupled to the plurality of spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer, with the lenses and the suspending polymer having different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process. | 03-18-2010 |
20100068840 | ORGANIC LIGHT EMITTING APPARATUS AND METHOD OF PRODUCING THE SAME - Provided are an organic light emitting apparatus for use in, for example, a flat device display, and a method of producing the apparatus. The organic light emitting apparatus has sides formed by division at ends of its substrate. Three-dimensional portions are formed on the surface of the substrate along the sides. An inorganic sealing layer is formed to extend toward the three-dimensional portions. | 03-18-2010 |
20100081221 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING TEXTURED STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer. | 04-01-2010 |
20100087021 | METHOD OF FABRICATING PIXEL STRUCTURE - A method of fabricating a pixel structure includes first forming a first, a second, and a third dielectric layers over an active device and a substrate. Etching rates of the first and the third dielectric layers are lower than an etching rate of the second dielectric layer. A contact opening exposing a portion of the active device is formed in the third, the second, and the first dielectric layers. The third and the second dielectric layers are patterned to form a number of stacked structures. An electrode material layer is formed and fills the contact opening. The electrode material layer located on the stacked structures and the electrode material layer located on the first dielectric layer are separated. The stacked structures and the electrode material layer thereon are simultaneously removed to define a pixel electrode and to form at least an alignment slit in the pixel electrode. | 04-08-2010 |
20100093119 | RESIN COMPOSITION FOR PRINTING PLATE - Disclosed is a polymer having excellent solvent resistance which can be produced by using a polycarbonate diol having a repeating unit represented by the formula (1) and/or (2), having a hydroxyl group at both termini, and having a number average molecular weight of from 300 to 50,000: | 04-15-2010 |
20100093120 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a substrate, a gate electrode positioned on the substrate, a first insulating layer positioned on the substrate comprising the gate electrode, an amorphous silicon layer positioned on the first insulating layer so that a predetermined area thereof corresponds to the gate electrode, ohmic layers that positioned on a predetermined area of the amorphous silicon layer, the ohmic layers defining a source area and a drain area, a source electrode or a drain electrode electrically connected to any one of the ohmic layers and a cathode that is electrically connected to the other one of the ohmic layers, a second insulating layer positioned on the substrate comprising the source electrode or the drain electrode and the cathode, the second insulating layer comprising an opening exposing a portion of the cathode, an emitting layer positioned within the opening, and an anode positioned on the substrate comprising the emitting layer. | 04-15-2010 |
20100093121 | SYSTEM AND METHOD FOR DIFFERENTIATING PICTURES AND TEXTS - A dual emitting device includes a transparent substrate and an array of pixels. The array of pixels is disposed on the transparent, and each pixel of the array includes at least one first sub-pixel and at least one second sub-pixel. The first sub-pixel includes a first OLED driven by a first TFT, and a first sheltering layer on the first OLED. The second sub-pixel includes a second OLED driven by a second TFT, and a second sheltering layer formed between the transparent substrate and the second OLED. | 04-15-2010 |
20100099209 | MULTI-LEVEL INTEGRATED PHOTONIC DEVICES - A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets. | 04-22-2010 |
20100099210 | Method for Fabricating a Polymer L.E.D. - A light-emissive device is prepared by depositing a polymer layer on a substrate. The deposition process utilizes a formulation comprising a conjugated polymer dissolved in a solvent, the solvent including a trialkyl-substituted aromatic hydrocarbon wherein at least two of the alkyl substituents are ortho to one another. The deposition of the polymer layer on the substrate may be accomplished by an ink-jet method. | 04-22-2010 |
20100105157 | PROCESS OF MICRO-DISPLAY - A process of a micro-display is provided. First, a substrate having a pixel region and a periphery circuit region is provided, in which a metal reflection layer is formed in the pixel region, and a periphery circuit is formed in the periphery circuit region. Next, a dielectric layer is formed on the substrate to cover the pixel region and the periphery circuit region. Then, a patterned mask layer exposing the dielectric layer on the metal reflection layer is formed on the dielectric layer. Thereafter, a portion of the exposed dielectric layer is removed by using the patterned mask layer as a mask. Next, the patterned mask layer is removed. And then, a portion of the dielectric layer is removed to expose the metal reflection layer. | 04-29-2010 |
20100112736 | FULL COLOR DISPLAY - A full color display comprising a red, a green, and a blue light emitting diode, each light emitting diode including a light emitting region having at least one layer of single crystal rare earth material, the rare earth material in each of the light emitting diodes having at least one radiative transition, and the rare earth material producing a radiation wavelength of approximately 640 nm in the red light emitting diode, 540 nm in the green light emitting diode, and 460 nm in the blue light emitting diode. Generally, the color of each LED is determined by selecting a rare earth with a radiative transition producing a radiation wavelength at the selected color. In cases where the rare earth has more than one radiative transition, tuned mirrors can be used to select the desired color. | 05-06-2010 |
20100120183 | Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the method - Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region. | 05-13-2010 |
20100120184 | OPTOELECTRONIC DEVICE STRUCTURE - The application is related to an optoelectronic device structure including a stress-balancing layer. The optoelectronic device structure comprises a high thermal conductive substrate, a stress-balancing layer on the high thermal conductive substrate, a reflective layer on the stress-balancing layer and an epitaxial structure on the reflective layer. | 05-13-2010 |
20100120185 | METHOD OF MANUFACTURING ORGANIC EL ELEMENT, ORGANIC EL ELEMENT, AND ORGANIC EL DISPLAY DEVICE - A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes ( | 05-13-2010 |
20100124794 | METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS AND MOLD ASSEMBLY FOR THE SAME - A method for manufacturing a semiconductor apparatus which does not hamper the miniaturization of products and can simplify the manufacturing process without the optical performance deteriorating is described. Furthermore, a mold assembly for use in molding a semiconductor apparatus can be provided. A substrate can be set within a lower mold, wherein a plurality of optical semiconductor elements are mounted on the substrate at predetermined intervals. Primary transfer molding using the lower mold and a primary upper mold can be carried out to form a plurality of frame bodies so as to surround the respective optical semiconductor elements. While the substrate is set on the lower mold, secondary transfer molding using the lower mold and the secondary upper mold can be carried out to form the light-transmitting portions so as to cover the optical semiconductor elements and the frame bodies on the substrate. Then, a multi-piece product of semiconductor apparatuses can be removed from the molds and cut by a dicer to separate the individual semiconductor apparatuses. | 05-20-2010 |
20100124795 | METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE - It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved. | 05-20-2010 |
20100124796 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer. | 05-20-2010 |
20100124797 | GaN COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P—GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N—GaN layer. | 05-20-2010 |
20100129946 | SURFACE EMITTING LASER ARRAY, PRODUCTION PROCESS THEREOF, AND IMAGE FORMING APPARATUS HAVING SURFACE EMITTING LASER ARRAY - A surface emitting laser array comprising a plurality of surface emitting laser devices each having a semiconductor layer containing a first reflection mirror, an active layer, a current confined portion and a second reflection mirror. The laser array further comprises a first metal material layer for dissipating heat formed through a first insulating layer on the semiconductor layer and a second metal material layer for injecting current into the active layer formed through a second insulating layer on the first metal material layer. The first metal material layer is commonly shared by the plurality of the surface emitting laser devices. | 05-27-2010 |
20100136727 | PRODUCTION METHOD FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention provides a production method for a nitride semiconductor light emitting device, which warps less after removing the substrate, and which can emit light from the side thereof; specifically, the present invention provides a production method for a nitride semiconductor light emitting device comprising: forming stacked layers by stacking at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate in this order; forming grooves which divide the stacked layers so as to correspond to nitride semiconductor light emitting devices to be produced; filling the grooves with a sacrifice layer; and forming a plate layer on the p-type semiconductor layer and the sacrifice layer by plating. | 06-03-2010 |
20100136728 | LIGHT-EMITTING DIODE CHIP WITH HIGH LIGHT EXTRACTION AND METHOD FOR MANUFACTURING THE SAME - This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided. | 06-03-2010 |
20100151602 | LASER ROUGHENING TO IMPROVE LED EMISSIONS - An improved method of forming a LED with a roughened surface is described. Traditional methods of roughening a LED surface utilizes strong etchants that require sealing or protecting exposed areas of the LED. The described method uses a focused laser to separate the LED from the substrate, and a second laser to roughen the LED surface thereby avoiding the use of strong etchants. A mild etchant may be used on the laser roughened LED surface to remove unwanted metals. | 06-17-2010 |
20100151603 | METHOD OF MANUFACTURING A RESONANT CAVITY OPTICAL RADIATION EMITTING DEVICE - A method of manufacturing a device for emission of optical radiation integrated on a substrate of a semiconductor material includes the steps of forming a first mirror, a second mirror of a dielectric type, and an active layer comprising a main zone designed to be excited to generate the radiation. First and second electrically conductive layers are formed and arranged to produce a generation electric signal of an electric field to which an excitation current of the main zone is associated. A dielectric region is formed between the first and the second layers by partially oxidizing the first electrically conductive layer to and thereby obtaining a thermal oxide layer, to space out corresponding peripheral portions of the first and second layers so that the electric field present in the main zone is greater than that present between the peripheral portions thus favouring a corresponding generation of the excitation current in the main zone. | 06-17-2010 |
20100151604 | LIGHT EMITTING DIODE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME - The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer. | 06-17-2010 |
20100151605 | FULL COLOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME - The present invention relates to a full color organic electroluminescent device and a method for fabricating the same and provides a full color organic electroluminescent device. The invention reduces misalignment errors caused by fine patterning of the emitting layer by reducing the steps of the fine patterning process. In particular, the blue emitting layer functions as a hole inhibition layer which results in superior color purity and improved stability for the color organic electroluminescent device. The use of such a blue emitting layer also reduces the manufacturing steps. The device comprises a substrate; a first electrode pattern formed on the substrate; a red emitting layer formed by patterning a red emitting material on a red pixel region of the first electrode pattern and a green emitting layer formed by patterning a green emitting material on a green pixel region of the first electrode pattern. A blue emitting layer is applied over the entire substrate, over the upper parts of the red and green emitting layers and a second electrode is formed on an upper part of the blue emitting layer. | 06-17-2010 |
20100159622 | LIGHT EMITTING DEVICE AND METHOD OF FORMING THE SAME - A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6. | 06-24-2010 |
20100167441 | Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process. | 07-01-2010 |
20100173434 | NANOCRYSTAL ELECTROLUMINESCENCE DEVICE AND FABRICATION METHOD THEREOF - A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further, a method for fabricating the nanocrystal electroluminescence device. | 07-08-2010 |
20100178720 | Method of manufacturing semiconductor light emitting device - A method of manufacturing a semiconductor light emitting device may include forming an insulating layer on a substrate, forming a plurality of first holes in the insulating layer, forming a plurality of GaN rods in the plurality of first holes, and laterally growing an n-GaN layer on the plurality of GaN rods. | 07-15-2010 |
20100190281 | ORGANIC ELECTROLUMINESCENT DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - An organic electroluminescent device including an organic thin-film transistor element having at least an active layer made of an organic material; and an organic electroluminescent element driven by the organic thin-film transistor element. | 07-29-2010 |
20100197055 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH PROTRUSIONS TO IMPROVE EXTERNAL EFFICIENCY AND CRYSTAL GROWTH - A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers. | 08-05-2010 |
20100203659 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step. | 08-12-2010 |
20100203660 | Semiconductor light emitting element and manufacturing method thereof - A semiconductor light-emitting device (LE | 08-12-2010 |
20100203661 | METHOD FOR PRODUCING LIGHT-EMITTING DIODE - The present invention provides a method for producing a light-emitting diode, the method comprising a lamination step of forming a laminated semiconductor layer by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer onto a substrate, as well as forming a plurality of reflective p-type electrodes on top of the p-type semiconductor layer, a plating step of forming a seed layer that covers the reflective p-type electrodes and the p-type semiconductor layer, and fowling a plating layer on top of the seed layer, a removal step of removing the substrate from the n-type semiconductor layer, thereby exposing a light extraction surface of the n-type semiconductor layer, and an electrode formation step of performing dry etching of the light extraction surface of the n-type semiconductor layer using an etching gas containing the same element as a dopant element within the n-type semiconductor layer, and subsequently forming an n-type electrode on the light extraction surface. | 08-12-2010 |
20100203662 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface. | 08-12-2010 |
20100210050 | METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE - A method of manufacturing a liquid crystal display device | 08-19-2010 |
20100210051 | FACET EXTRACTION LED AND METHOD FOR MANUFACTURING THE SAME - A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring. | 08-19-2010 |
20100210052 | THIN FILM TRANSISTOR PANEL, LIQUID CRYSTAL DISPLAY HAVING THE SAME AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR PANEL - A thin film transistor panel, a liquid crystal display having the same, and a method of manufacturing the thin film transistor panel are provided. The thin film transistor includes a gate line formed on an insulating substrate in a predetermined direction, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line, a black matrix formed to overlap at least a portion of the gate line, the data line, and the thin film transistor, a color filter formed in a region partitioned by the black matrix, and a pixel electrode formed on the color filter and electrically connected to the thin film transistor. | 08-19-2010 |
20100216266 | Pulsed high-voltage silicon quantum dot fluorescent lamp - In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light. | 08-26-2010 |
20100221855 | Light Emitting Device and Method of Manufacturing the Same - In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film ( | 09-02-2010 |
20100221856 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF - One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them. | 09-02-2010 |
20100233834 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes opposing substrates. One of the substrates has a thin film transistor and a color filter formed thereon. A spacer formed between the substrates maintains a cell gap. A light shielding layer is formed at a lower portion of the spacer and overlaps the thin film transistor. The light shielding layer has a pattern substantially identical to the spacer. The light shielding layer and the spacer are simultaneously formed using the same photolithographic process steps. | 09-16-2010 |
20100261300 | METHOD FOR SEPARATING SUBSTRATE FROM SEMICONDUCTOR LAYER - A method for separating an epitaxial substrate from a semiconductor layer initially forms a patterned silicon dioxide layer between a substrate and a semiconductor layer, and then separates the substrate from the patterned silicon dioxide layer using two wet etching processes. | 10-14-2010 |
20100273280 | LED WITH SUBSTRATE MODIFICATIONS FOR ENHANCED LIGHT EXTRACTION AND METHOD OF MAKING SAME - The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface morphology created by the RIE process may be emulated using different combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching. | 10-28-2010 |
20100279444 | ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - An organic electro-luminance display device includes a first substrate and a second substrate; an array element on the first substrate, the array element including at least one thin film transistor (TFT) in each sub-pixel; a first electrode on the second substrate; a buffer on the first electrode including a first buffer at an outer region partitioning each sub-pixel and a second buffer at a region including a stepped portion of the first buffer, wherein a undercut structure is formed by the first and second buffers; an organic electro-luminescent layer in each sub-pixel partitioned by the second buffer; a second electrode formed on the organic electro-luminescent layer; and a conductive spacer for electrically connecting the TFT to the second electrode. | 11-04-2010 |
20100279445 | TRANSFLECTIVE TYPE DIODE SUBSTRATE AND A METHOD FOR FABRICATION THE SAME - A transflective diode substrate for a liquid crystal display device, includes: a reflective zone including a diode having a scan electrode, an insulating pattern on the scan electrode and a pixel electrode over the scan electrode, organic patterns around the diode, and a reflection electrode over the organic patterns; and a transmissive zone adjacent to the reflective zone; wherein the pixel electrode is formed in the reflective zone and the transmissive zone. | 11-04-2010 |
20100285621 | METHOD OF MAKING DIODE HAVING REFLECTIVE LAYER - A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer. | 11-11-2010 |
20100285622 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance. | 11-11-2010 |
20100291716 | ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF MANUFACTURING THE SAME - An EL device with low manufacturing costs and improved yield due to simplified structure and use of an organic light emitting transistor and a method of manufacturing the same are disclosed. The EL device includes: a first organic light emitting transistor including a first source electrode; a first drain electrode opposing the first source electrode; a first intermediate layer including at least an emission layer formed between the first source electrode and the first drain electrode; and a first gate electrode which is insulated from the first source electrode, the first drain electrode, and the first intermediate layer and surrounds the first intermediate layer; and a second organic light emitting transistor including a second source electrode; a second drain electrode opposing the second source electrode; a second intermediate layer including at least an emission layer formed between the second source electrode and the second drain electrode; and a second gate electrode which is insulated from the second source electrode, the second drain electrode, and the second intermediate layer, surrounds the second intermediate layer, and is connected to the first drain electrode. | 11-18-2010 |
20100311194 | Method For Manufacturing Surface-Emitting Laser Device, Optical Scanner, Image Forming Apparatus, And Oxidation Apparatus - Disclosed is a method for manufacturing a surface-emitting laser device that emits laser light in a direction perpendicular to a substrate. The method includes manufacturing a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting mirror including a selectively oxidized layer are laminated on the substrate; etching the laminated body from an upper surface to form a mesa structure having at least the selectively oxidized layer exposed at a side surface; and mounting the laminated body on a tray having a front surface shaped to follow a warpage of the laminated body at an oxidation temperature and selectively oxidizing the selectively oxidized layer from the side surface of the mesa structure, thereby generating a confinement structure in which a current passing region is surrounded by an oxide. | 12-09-2010 |
20100330715 | Uniform Transfer of Luminescent Quantum Dots onto a Substrate - A method of uniformly transferring luminescent quantum dots onto a substrate, comprising: a) preparing a colloidal suspension of luminescent quantum dots in a hydrophobic solvent, wherein the density of the hydrophobic solvent is from 0.67 g/cm | 12-30-2010 |
20100330716 | ELECTROLUMINESCENT DEVICE HAVING IMPROVED LIGHT OUTPUT - An electroluminescent device including a transparent substrate, a securing layer, a light scattering layer, an electroluminescent unit including a transparent electrode layer, a light emitting element including at least one light emitting layer, and a reflecting electrode layer in that order, wherein the light scattering layer includes one monolayer of inorganic particles having an index of refraction larger than that of the light emitting layer and wherein the securing layer holds the inorganic particles in the light scattering layer. | 12-30-2010 |
20100330717 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate. | 12-30-2010 |
20110003413 | MANUFACTURING METHOD OF SEMICONDUCTOR PHOTONIC DEVICE SUBSTRATE - In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed. | 01-06-2011 |
20110003414 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND FABRICATING METHOD THEREOF - An organic light emitting diode display device includes a switch TFT and a drive TFT formed on a substrate; an overcoat layer formed on the TFTs; a drain contact hole exposing portions of a drain electrode of the drive TFT by removing portions of the overcoat layer; a first electrode contacting to the drain electrode of the drive TFT; a bank pattern exposing an aperture area of a pixel; an organic layer formed on the first electrode; and a second electrode formed on the organic layer, wherein the bank pattern blocks regions where the drain contact hole is formed. | 01-06-2011 |
20110003415 | HIGH EFFICIENCY LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer and a second contact metal layer respectively deposed on two opposite surfaces of the permanent substrate; a bonding layer deposed on the second contact metal layer; a diffusion barrier layer deposed on the bonding layer, wherein the permanent substrate, the bonding layer and the diffusion barrier layer are electrically conductive; a reflective metal layer deposed on the diffusion barrier layer; a transparent conductive oxide layer deposed on the reflective metal layer; an illuminant epitaxial structure deposed on the transparent conductive oxide layer, wherein the illuminant epitaxial structure includes a first surface and a second surface opposite to the first surface; and a second conductivity type compound electrode pad deposed on the second surface of the illuminant epitaxial structure. | 01-06-2011 |
20110003416 | LIGHT EMITTING DIODE HAVING VERTICAL TOPOLOGY AND METHOD OF MAKING THE SAME - An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate. | 01-06-2011 |
20110008920 | Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor - A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape. | 01-13-2011 |
20110014734 | METHOD FOR FABRICATING FLIP CHIP GALLIUM NITRIDE LIGHT EMITTING DIODE - The present invention discloses a method for fabricating a flip chip GaN LED, which has a predetermined region on an epitaxial layer for forming a first groove to expose a portion of the substrate, and another predetermined region on the epitaxial layer for forming a second groove to expose a portion of N type GaN Ohm contacting layer. On a side of the first groove, there are a translucent conducting layer, an N type electrode pad, a first isolation protection layer, a metallic reflection layer and a second isolation protection layer sequentially formed on the surface of a P type GaN Ohm contacting layer. On another side of the first groove, a translucent conducting layer, an N type electrode pad, a first isolation protection layer and a second isolation protection layer are sequentially formed on the surface of an N type GaN Ohm contacting layer. The above structure not only can provide a flat surface for electrical connection of the P type and N type electrode pads with the circuit board, but also to keep the metallic reflection layer from conducting electricity to avoid increasing the forward voltage and the power consumption, and accordingly to promote the light emitting performance of the LED. | 01-20-2011 |
20110020968 | MANUFACTURING PROCESS OF TRANSFLECTIVE PIXEL STRUCTURE - A transflective pixel structure including a scan line, a data line, a thin film transistor, a pixel electrode and an organic material layer is provided. The scan line and the data line are disposed over a substrate. The thin film transistor is disposed over the substrate and electrically connected to the scan line and the data line. The pixel electrode is disposed over a substrate and is electrically connected to the thin film transistor. The pixel electrode has a reflective region and a transmissive region. The organic material layer covers both the thin film transistor and the pixel electrode. The organic material layer disposed correspondently above the transmissive region of the pixel electrode has a plurality of refracting patterns on its upper surface. | 01-27-2011 |
20110027924 | SURFACE EMITTING LASER, METHOD FOR MANUFACTURING SURFACE EMITTING LASER, AND IMAGE FORMING APPARATUS - A surface emitting laser includes a lower multilayer mirror and an upper multilayer mirror which are provided on a substrate. A first oxidizable layer is partially oxidized to form a first current confinement layer including a first conductive region and a first insulating region. A second oxidizable layer is partially oxidized to form a second current confinement layer including a second conductive region and a second insulating region, a boundary between the first conductive region and the first insulating region being disposed inside the second current confinement layer in an in-plane direction of the substrate. The first oxidizable layer and the second oxidizable layer or layers adjacent to the respective oxidizable layers are adjusted so that when both layers are oxidized under the same oxidizing conditions, the oxidation rate of the first oxidizable layer is lower than that of the second oxidizable layer. | 02-03-2011 |
20110033962 | HIGH EFFICIENCY LED WITH MULTI-LAYER REFLECTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME - Provided are a high efficiency light emitting diode and a method for fabricating the same, in which a multi-layer reflector is laminated to a surface emission type light emitting diode to improve the efficiency of a light emitting diode. A high efficiency reflector is integrated on the light emitting diode using a dry etching process and a wet etching process. Although light produced from an active layer when applying a current thereto is emitted in several directions, the reflectors formed both sides of the active layer reflect the emitted light toward a surface of a semiconductor substrate, thus improving the light efficiency. Compared with the existing light emitting diode, the structure of the proposed light emitting diode is more efficient and therefore it can be used as a light source having low power consumption and high brightness. Also, the light emitting diode can be fabricated using the existing semiconductor process, thus reducing the complexity of the fabricating process. | 02-10-2011 |
20110039360 | Selective Decomposition Of Nitride Semiconductors To Enhance LED Light Extraction - A method of texturing a surface within or immediately adjacent to a template layer of a LED is described. The method uses a texturing laser directed through a substrate to decompose and pit a semiconductor material at the surface to be textured. By texturing the surface, light trapping within the template layer is reduced. Furthermore, by patterning the arrangement of pits, metal coating each pit can be arranged to spread current through the template layer and thus through the n-doped region of a LED. | 02-17-2011 |
20110045619 | Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure - A method for forming wavelength-conversion LED encapsulant structure includes forming an LED encapsulant structure body, forming a layer of a wavelength-conversion material on a first surface, disposing the first surface to cause the wavelength-conversion material to be in contact with a surface region of the LED encapsulant structure body, applying a pressure between the first surface and the surface region of the LED encapsulant structure body, and causing at least a portion of the wavelength-conversion material to be at least partially embedded in the surface region of the LED encapsulant structure body. | 02-24-2011 |
20110045620 | Light emitting diode integrated with lens, line printer head, and method of manufacturing the light emitting diode - Provided are a light emitting diode unit including a light emitting diode integrated with a lens, a line printer head using the light emitting diode, and a method of manufacturing the light emitting diode. The light emitting diode unit includes the light emitting diode layer bonded to a transparent substrate after removing a growth substrate on which the light emitting layer is grown, and a lens that refracts light emitted from the light emitting diode is formed on the transparent substrate. | 02-24-2011 |
20110045621 | VERTICAL CAVITY SURFACE EMITTING LASER HAVING MULTIPLE TOP-SIDE CONTACTS - A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes. | 02-24-2011 |
20110059560 | Organic Electroluminescence Pixel, Organic Electroluminescence Device, and Manufacturing Method Thereof - An organic electroluminescence pixel, an organic electroluminescence device comprising the same, and method for manufacturing the organic electroluminescence device are provided. The organic electroluminescence pixel comprises a substrate, a first electrode, a first carrier-injection layer, a semi-trans-flective metal layer, an organic emitting layer, and a second electrode. The first electrode is formed on the substrate. The first carrier-injection layer, the semi-trans-flective metal layer, and the organic emitting layer are formed between the first electrode and the second electrode. At least one of the first electrode and the second electrode comprises a transparent electrode. | 03-10-2011 |
20110065220 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode. | 03-17-2011 |
20110070674 | GALLIUM NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a gallium nitride-based compound semiconductor device and a method of manufacturing the same. According to the present invention, there is provided a gallium nitride-based III-V group compound semiconductor device comprising a gallium nitride-based semiconductor layer and an ohmic electrode layer formed on the gallium nitride-based semiconductor layer. The ohmic electrode layer comprises a contact metal layer, a reflective metal layer, and a diffusion barrier layer. | 03-24-2011 |
20110081737 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE ASSEMBLY - A method for manufacturing a light emitting diode (LED) assembly comprises the steps of: covering a light-reflection layer onto a substrate layer, covering a light-emitting layer onto the light-reflection layer, and forming a P type electrode and an N type electrode extended from the light-emitting layer, perforating through the light-reflection layer, and exposed from the substrate layer to form an LED chip structure; packaging the LED chip structure with a light-transmissible packaging material and keeping the P type electrode and the N type electrode exposed from the light-transmissible packaging material to form a molded LED chip cell; and electrically connecting the P type electrode and the N type electrode of the molded LED chip cell to a circuit board, so as to manufacture the LED assembly. | 04-07-2011 |
20110086449 | Method for fabricating oxide-confined vertical-cavity surface-emitting laser - The present invention discloses a method for fabricating a heat-resistant, humidity-resistant oxide-confined vertical-cavity surface-emitting laser (VCSEL) by slowing down the oxidizing rate during a VCSEL oxidation process to thereby reduce stress concentration of an oxidation layer and by preventing moisture invasion using a passivation layer disposed on a laser window. The VCSEL device thus fabricated is heat-resistant, humidity-resistant, and highly reliable. In a preferred embodiment, the oxidation process takes place at an oxidizing rate of less than 0.4 μm/min, and the passivation layer is a SiON passivation layer. | 04-14-2011 |
20110086450 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE - Disclosed is a method of manufacturing a TFT array substrate having a reduced number of mask processes. The method includes sequentially depositing a first conductive material, a gate insulating layer, a semiconductor layer, and a second conductive material on a substrate, and forming a first resist pattern having three height levels on the second conductive material. The method further includes forming a gate line, a data line that crosses the gate line and has first and second slit units, a source electrode connected to the data line and having a third slit unit, and a drain electrode positioned opposite the source electrode with a channel interposed between the source electrode and the drain electrode and having a fourth slit unit, through a plurality of etching processes using the first resist pattern. | 04-14-2011 |
20110086451 | FLAT PANEL DISPLAY AND METHOD OF FABRICATING THE SAME - A flat panel display, and method of fabricating the same, including a substrate having a display portion and a pad that is arranged on the substrate and is electrically coupled with the display portion. The pad includes a pad electrode arranged on the substrate, a passivation layer arranged on the pad electrode and having only one contact hole that exposes the pad electrode, and a transparent electrode arranged on the passivation layer and the pad electrode. The passivation layer may alternatively have a plurality of contact holes that expose the pad electrode. In this case, the reflective layer pattern is arranged on the passivation layer and the pad electrode, and it exposes portions of the pad electrode in the contact holes. Furthermore, the transparent electrode would be arranged on the reflective layer pattern and the exposed portions of the pad electrode. | 04-14-2011 |
20110086452 | SEMICONDUCTOR HAVING ENHANCED CARBON DOPING - Methods for fabricating semiconductors with enhanced strain. One embodiment includes fabrication of a semiconductor device with an epitaxial structure. The epitaxial structure is formed with one or more semiconductor layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial growth to form periods where surfaces are group III rich. | 04-14-2011 |
20110092006 | METHOD OF FABRICATING DISPLAY DEVICE USING PLASTIC SUBSTRATE - Disclosed is a method of fabricating a display device that includes: forming an adhesive layer of an inorganic material on a carrier substrate having a display area and a non-display area surrounding the display area; forming a plurality of adhesive patterns of a metallic material on the adhesive layer, each of the plurality of adhesive patterns having a width and a height; forming a plastic substrate on the adhesive layer and the plurality of adhesive patterns; forming a plurality of elements for displaying images on the plastic substrate; cutting the carrier substrate and the plastic substrate to divide the display area and the non-display area; and detaching the carrier substrate from the plastic substrate. | 04-21-2011 |
20110097831 | Method of Manufacturing a Vertical Type Light-Emitting Diode - In a method of manufacturing a vertical type light-emitting diode, a multilayered structure of group III nitride semiconductor compounds is epitaxy deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the substrate. A portion of the exposed irregular surface of the multilayered structure is then etched for forming an electrode contact surface on which an electrode layer is subsequently formed. With this method, no specific planarized region is required on the irregular surface of the substrate. As a result, planarization treatment of the substrate is not necessary. The same substrate with the irregular surface can be reused for fabricating vertical and horizontal light-emitting diodes. | 04-28-2011 |
20110097832 | METHOD FOR FABRICATING LED DEVICE - An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is formed to have multiple micro concave-convex structures to mitigate the light-emitting loss resulted from total reflection, and increase the light-emitting efficiency of the LED device. | 04-28-2011 |
20110097833 | LIGHT SOURCE INCLUDING A WAVELENGHT-CONVERETED SEMICONDUCTOR LIGHT EMITTING DEVICE AND A FILTER - A semiconductor light emitting device comprises a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer is adapted to emit first light having a first peak wavelength. A first wavelength converting material is adapted to absorb the first light and emit second light having a second peak wavelength. A second wavelength converting material is adapted to absorb either the first light or the second light and emit third light having a third peak wavelength. A filter is adapted to reflect fourth light having a fourth peak wavelength. The fourth light is either a portion of the second light or a portion of the third light. The filter is configured to transmit light having a peak wavelength longer or shorter than the fourth peak wavelength. The filter is disposed over the light emitting device in the path of at least a portion of the first, second, and third light. | 04-28-2011 |
20110104836 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence. | 05-05-2011 |
20110104837 | GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING HIGH EMISSION EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced. | 05-05-2011 |
20110111540 | METHOD OF FABRICATING FLAT PANEL DISPLAY - Exemplary embodiments provide a flat panel display and method for forming the same including a substrate having a pixel driving circuit region and an emission region, a thin film transistor in the pixel driving circuit region, and a pixel electrode on the same layer as the source and drain electrodes. The thin film transistor may include a semiconductor layer, a gate electrode, and source and drain electrodes. The pixel electrode may contact one end of the semiconductor layer of the thin film transistor. The source and drain electrodes and the pixel electrode may be stacked structures having a first metal layer, a second metal layer, and a transparent conductive layer. | 05-12-2011 |
20110129952 | THIN FILM TRANSISTOR SUBSTRATES AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transistor substrate can be reduced, thereby reducing the manufacturing cost and improving the productivity. | 06-02-2011 |
20110143466 | METHOD OF FORMING VERTICAL STRUCTURE LIGHT EMITTING DIODE WITH HEAT EXHAUSTION STRUCTURE - The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer. | 06-16-2011 |
20110143467 | METHOD FOR FABRICATING INGAAIN LIGHT EMITTING DEVICE ON A COMBINED SUBSTRATE - One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred. | 06-16-2011 |
20110151605 | METHOD FOR FABRICATING COLOR FILTER USING SURFACE PLASMON AND METHOD FOR FABRICATING LIQUID CRYSTAL DISPLAY DEVICE - Discussed are methods for fabricating a color filter using a surface plasmon and a liquid crystal display (LCD) device capable of enhancing a transmittance ratio of an LC panel and simplifying entire processes, by forming a transmissive pattern consisting of a plurality of sub-wavelength holes having a period on a metal layer, and by implementing colors by selectively transmitting light of specific wavelengths with using a surface plasmon phenomenon. | 06-23-2011 |
20110151606 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURE - A method of making a light emitting device includes forming an active layer between first and semiconductor layers of different conductivity types, and forming a transparent conductive layer adjacent the second semiconductor layer. The transparent conductive layer includes a first transparent conductive region contacting a first region of the second semiconductor layer and a second transparent conductive region contacting a second region of the second semiconductor layer. An electrode is formed adjacent the first semiconductor layer in vertical alignment with the second region. | 06-23-2011 |
20110159615 | LED UNITS FABRICATION METHOD - A method for fabricating a plurality of individual light emitting diode units includes forming a GaN epitaxial layer on a sapphire substrate, forming a plurality of exhaust trenches on the GaN epitaxial layer, wherein the exhaust trenches define a plurality of individual light emitting diode units, forming a reflective layer on the GaN epitaxial layer, attaching the reflective layer to a conductive substrate, removing the sapphire substrate from the GaN epitaxial layer via a laser lift-off process, wherein a gas produced during the laser lift-off process is exhausted via the exhaust trenches, and dicing the conductive substrate along the exhaust trenches to form the plurality of individual light emitting diode units. | 06-30-2011 |
20110159616 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided, which includes first providing a light emitting diode chip. The light emitting diode chip includes a substrate and a p-type semiconductor layer, an active layer and an n-type semiconductor layer sequentially formed on the substrate. And then sections with different resistance are formed in the n-type semiconductor layer by implanting ions into the n-type semiconductor layer in an ion implanter. Finally, an electrode pad is deposited on the n-type semiconductor layer. The electrical resistances of the sections increase following an increase of a distance from the electrode pad to the sections. | 06-30-2011 |
20110159617 | DUAL LAYER COLOR-CENTER PATTERNED LIGHT SOURCE - A method of fabricating a color laser, comprising growing a first thin layer of ionic crystal on a substrate. The crystal can comprise many types of ionic crystals, such as sodium chloride or potassium chloride. A second thin layer of a different type of ionic crystal can be deposited above the first ionic crystal layer, such as lithium fluoride or sodium fluoride. An inert metal layer can be deposited between the first and second layers of ionic crystal and above the second layer of ionic crystal. When the first and second ionic crystal layers are radiated with gamma rays, they form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers have different wavelengths. Each of the ionic crystal layers emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies, and can be made to lase separately. | 06-30-2011 |
20110165710 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate electrode, a gate insulating layer, and a semiconductor layer that are sequentially formed on a substrate. Also, the display substrate includes a color filter layer formed on the substrate and exposing a portion of the semiconductor layer, and source and drain electrodes that each overlap with the semiconductor layer and the color filter layer. The gate electrode, the gate insulating layer, and the semiconductor layer have the same shape as each other, and the gate electrode is insulated from the gate insulating layer and the semiconductor layer by the color filter layer. | 07-07-2011 |
20110171764 | ENCAPSULATED ELECTRONIC DEVICE AND METHOD OF MANUFACTURING - An encapsulated electronic device is described comprising:
| 07-14-2011 |
20110171765 | MULTI-FIELD ARRANGING METHOD OF LED CHIPS UNDER SINGLE LENS - A multi-field arranging method of LED chips under a single lens includes the steps of: setting a first concentric circle on a bottom of a hemispherical lens, wherein the first concentric circle is centered at an axis of the hemispherical lens; and equidistantly arranging at least one first color chip, at least one second color chip and at least one third color chip on the first concentric circle in sequence. The present invention allows the color chips to present symmetrical light patterns through the hemispherical lens, thereby obtaining a light field with evener color mixture. | 07-14-2011 |
20110177638 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER - A semiconductor structure is grown on a top surface of a growth substrate. The semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. A curvature control layer is disposed in direct contact with the growth substrate. The growth substrate has a thermal expansion coefficient less than a thermal expansion coefficient of GaN and the curvature control layer has a thermal expansion coefficient greater than the thermal expansion coefficient of GaN. | 07-21-2011 |
20110183450 | SURFACE EMITTING SEMICONDUCTOR LASER, METHOD FOR FABRICATING SURFACE EMITTING SEMICONDUCTOR LASER, MODULE, LIGHT SOURCE APPARATUS, DATA PROCESSING APPARATUS, LIGHT SENDING APPARATUS, OPTICAL SPATIAL TRANSMISSION APPARATUS, AND OPTICAL SPATIAL TRANSMISSION SYSTEM - A surface emitting semiconductor laser includes a substrate, a lower reflective mirror formed on the substrate, an active layer formed on the lower reflective mirror, an upper reflective mirror formed on the active layer, an optical mode controlling layer formed between the lower reflective mirror and the upper reflective mirror, and a current confining layer formed between the lower reflective mirror and the upper reflective mirror. The active layer emits light. The upper reflective mirror forms a resonator between the lower reflective mirror and the upper reflective mirror. In the optical mode controlling layer, an opening is formed for selectively absorbing or reflecting off light that is emitted in the active layer. The optical mode controlling layer optically controls mode of laser light. The current confining layer confines current that is applied during driving. | 07-28-2011 |
20110189802 | METHOD FOR ENHANCING LIGHT EXTRACTION EFFICIENCY OF LIGHT EMITTING DIODES - A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a first layer of a first conduction type, an active layer, and a second layer of a second conduction type opposite to the first conduction type; growing a number of protrusions on at least one layer selected from the first layer, the active layer, and the second layer of the light emitting diode to form a patterned oxide layer for protecting the light emitting diode from etch; controlling height of the protrusions to achieve a predetermined etching depth of the light emitting diode; dry etching through a portion of the light emitting diode which is not protected by the patterned oxide layer to form a plurality of depressions on the light emitting diode; and removing the oxide layer from the selected layer. The light emitting diode is patterned so that more light beams can be emitted. Therefore, light extraction efficiency is enhanced. | 08-04-2011 |
20110189803 | LED CHIP PACKAGE STRUCTURE IN ORDER TO PREVENT THE LIGHT-EMITTING EFFICIENCY OF FLUORESCENT POWDER FROM DECREASING DUE TO HIGH TEMPERATURE AND METHOD FOR MAKING THE SAME - An LED chip package structure in order to prevent the light-emitting efficiency of fluorescent powder from decreasing due to high temperature includes a substrate unit, a light-emitting unit, a transparent colloid body unit, a fluorescent colloid body unit and a frame unit. The light-emitting unit has a plurality of LED chips electrically arranged on the substrate unit. The transparent colloid body unit has a plurality of transparent colloid bodies respectively covering the LED chips. The fluorescent colloid body unit has a plurality of fluorescent colloid bodies respectively covering the transparent colloid bodies. The frame unit is covering the peripheries of each transparent colloid body and each fluorescent colloid body in order to expose the top surfaces of the fluorescent colloid body. | 08-04-2011 |
20110229993 | METHOD OF FABRICATING A LIGHT EMITTING DIODE CHIP HAVING PHOSPHOR COATING LAYER - A method of fabricating light emitting diode chips having a phosphor coating layer comprises providing a substrate having a plurality of light emitting diodes formed thereon; forming a conductive bump on at least one of the plurality of light emitting diodes; forming a phosphor coating layer over the substrate and the light emitting diodes; cutting the phosphor coating layer by a point cutter to remove an upper portion of the phosphor coating layer, so as to reduce a thickness of the phosphor coating layer and expose the conductive bump; and forming a plurality of individual light emitting diode chips having the phosphor coating layer by separating the plurality of light emitting diodes. | 09-22-2011 |
20110229994 | Method of manufacturing organic light emitting display device - A method of manufacturing an organic light emitting display device includes providing a substrate, the substrate including a first electrode on which a first photosensitive layer is formed, a second electrode on which a second photosensitive layer is formed, and an exposed third electrode, coating an organic layer on the substrate, and carrying out an ashing process to remove the organic layer and the second photosensitive layer and to partially remove the first photosensitive layer so as to avoid exposing the upper surface of the first electrode. | 09-22-2011 |
20110229995 | Silicon Nanoparticle White Light Emitting Device - Multiple films of red-green-blue (RGB) luminescent silicon nanoparticles are integrated in a cascade configuration as a top coating in an ultraviolet/blue light emitting diode (LED) to convert it to a white LED. The configuration of RGB luminescent silicon nanoparticle films harnesses the short wavelength portion of the light emitted from the UV/blue LED while transmitting efficiently the longer wavelength portion. The configuration also reduces damaging heat and/or ultraviolet effects to both the device and to humans. | 09-22-2011 |
20110237008 | OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME - A method of fabricating a device by providing an auxiliary substrate having a metal nitride layer disposed thereon where the nitride layer has a nitrogen face and an opposite face and a dislocation density that is less than about 10 | 09-29-2011 |
20110237009 | LCOS DISPLAY UNIT AND METHOD FOR FORMING THE SAME - An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit. | 09-29-2011 |
20110244609 | METHOD OF FORMING CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE - An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate. | 10-06-2011 |
20110244610 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits. | 10-06-2011 |
20110244611 | LIGHT EMITTING DEVICE, LIGHT EMITTING SYSTEM HAVING THE SAME, AND FABRICATING METHOD OF THE LIGHT EMITTING DEVICE AND THE LIGHT EMITTING SYSTEM - A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types. | 10-06-2011 |
20110250712 | COLOR ELECTROPHORETIC DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to an embodiment of the present invention, a method for manuafacturing a color electrophoretic display device includes forming a thin film transistor (TFT) array substrate including a display region, wherein a plurality of pixel regions is defined in a matrix, and alignment keys are provided at the outside of the display region, forming an electrophoretic layer including a micro capsule layer formed so as to correspond to the display region of the TFT array substrate, and forming a color filter layer on an outer surface of the electrophoretic layer using the alignment keys so as to correspond to the respective pixel regions of the display region. | 10-13-2011 |
20110256648 | Method of Making Double-sided Wavelength Converter and Light Generating Device Using Same - A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched in the second photoluminescent element from a second side of the semiconductor construction. In some embodiments the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED). | 10-20-2011 |
20110263056 | Method of manufacturing a laser diode with improved light-emitting characteristics - The method of the invention is intended for manufacturing a laser diode with improved light-emitting characteristics. The method consists of providing certain components of a laser diode such as a wide-aperture lasing medium that has an active emitting layer with a first end and a second end, a DPH-mode reorganizer that contains a core and a plurality of nanogrooves made in the core and arranged in a pattern that accomplishes a given function and locally changes the refractive index of the core. The method further includes the steps of forming a semitransparent mirror on the second end of the active lasing medium and aligning the first end of the active emitting layer with the core of the DPH-mode reorganizer, thus forming a resonator of the laser diode. In the resonator, the light applied from the laser-active medium bounces back and forth between the DPH-mode reorganizer and the partially reflecting mirror, thereby enhancing stimulated emission. | 10-27-2011 |
20110269253 | MANUFACTURING THIN FILM TRANSISTOR ARRAY PANELS FOR FLAT PANEL DISPLAYS - A thin film transistor array panel for a flat panel display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting and insulated from the first signal line, a switching element having a first terminal connected to the first signal line, a second terminal connected to the second signal line, and a third terminal, a pixel electrode connected to the third terminal of the switching element, and first and second light blocking members extending parallel to the second signal line, each being disposed on an opposite side of and partially overlapping an respective edge of the second signal line, an interval between the first and second light blocking members being in a range of from more than 1.5 μm to less than 4 μm. The array panel prevents light leakage from the display and improves its transmittance, aperture ratio and color reproducibility. | 11-03-2011 |
20110269254 | THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME - Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer. | 11-03-2011 |
20110275171 | Method of Wafer Level Purifying Light Color Emitting from a Light Emitting Semiconductor Wafer - A method of wafer level purifying light color of a LED semiconsuctor is disclosed. After a LED wafer is fabricated, multi-transparent films formed of first layer and a second layer alternatively until reaching a predetermined number deposited by e-gun deposition with an aid of ion plasma beam. The first layer is formed of an oxide layer and the second layer is formed of a metal oxide layer. The two materials, one has a high index of refraction and the other has a low index of refraction. The total multi-transparent films are about 80 to 120 layer which can narrow wave width about a central wavelength. | 11-10-2011 |
20110281381 | Method for producing group III nitride semiconductor light-emitting device - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device, the device including a light-emitting layer which is formed so as to contour a stripe-pattern embossment and to have a uniform thickness. In the production method, firstly, a stripe-pattern embossment having a serrated cross section is formed on one surface of a substrate. Subsequently, on the surface of the substrate on the side of the stripe-pattern embossment having a serrated cross section, an n-type layer, a light-emitting layer, and a p-type layer are sequentially deposited through reduced-pressure MOCVD so as to contour the embossment. Thus, each of the layers is formed so as to contour the embossment, and to have a stripe pattern with a serrated cross section. In this MOCVD process, the direction of gas flow is parallel with the direction of the stripe of the embossment. Thus, the light-emitting layer has uniform thickness and composition in an in-plane direction. | 11-17-2011 |
20110287564 | LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE - A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device. | 11-24-2011 |
20110294243 | PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME - A photoresist composition suitable for forming a high-resolution pattern, and a method of forming a photoresist pattern using the same. The photoresist composition includes about 10 to about 45 parts by weight of an alkali soluble binder resin including a hydroxyl group, about 0.1 to about 5 parts by weight of a photo-acid generator, about 1 to about 5 parts by weight of a cross-linker that cross-links the alkali-soluble binder resin including the hydroxyl group, about 0.3 to about 3 parts by weight of a quinone diazide compound, and a remainder of a solvent. | 12-01-2011 |
20110300651 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer which is included in a first structure body, the semiconductor layer including a light-emitting layer on a substrate. The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate from the semiconductor layer, and forming a second structure body in which the semiconductor layer is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer. | 12-08-2011 |
20110300652 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer. | 12-08-2011 |
20110312111 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof. | 12-22-2011 |
20110312112 | LIGHT EMITTING DIODE - A light emitting diode having a substrate, an electron injection layer, an active layer, a hole injection layer, a first pad electrically connected to the hole injection layer, and a second pad electrically connected to the electron injection layer. The hole injection layer includes an activated region and a patterned non-activated region. The first pad is disposed upon the non-activated region and the first pad and the non-activated region are overlapping in the vertical direction. | 12-22-2011 |
20110312113 | LIGHT-EMITTING DIODE STRUCTURE WITH ELECTRODE PADS OF SIMILAR SURFACE ROUGHNESS AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads. | 12-22-2011 |
20120003766 | LIGHT EMITTING DIODE HAVING A THERMAL CONDUCTIVE SUBSTRATE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved. | 01-05-2012 |
20120009704 | Vertical cavity surface emitting laser and method of manufacturing thereof - A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector. | 01-12-2012 |
20120015464 | METHOD OF FORMING A COLOR FILTER TOUCH SENSING SUBSTRATE - A method of forming a color filter touch sensing substrate integrates touch-sensing structures/elements of a touch panel into the inner side of the color filter substrate, which faces a thin film transistor substrate, and forms patterned assistant electrodes on the surfaces of the transparent sensing pads for decreasing the equivalent resistance of the touch-sensing structures/elements. Moreover, since an adjacent transparent conductive layer and an assistant electrode layer are patterned to form the transparent sensing pads and the patterned assistant electrodes, a simplified pattern-transferring process can be applied to the transparent sensing pads and the patterned assistant electrodes, or bridge structures can be formed from the assistant electrode layer for electrically connecting between some transparent sensing pads. Therefore, the forming process is simplified. | 01-19-2012 |
20120034719 | METHOD OF FABRICATING A PIXEL ARRAY SUBSTRATE - A method of fabricating a pixel array substrate is disclosed. The reflective pixel array substrate can be made by utilizing five photo masks only. The reflective pixel array substrate includes a substrate, a thin film transistor, a reflective electrode, an insulating layer and numerous protruding bumps. The step between the protrusion bump and the substrate cause the reflective electrode thereon to have a corrugated structure. The gate electrode of the thin film transistor and the protruding bumps are made of a same conductive layer. The drain electrode connects the reflective electrode, and the drain electrode and the reflective electrode are made of a same conductive layer. | 02-09-2012 |
20120034720 | Vertical cavity surface emitting laser and method of manufacturing the same - A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer. | 02-09-2012 |
20120040481 | METHOD OF MANUFACTURING TRANSFLECTIVE LIQUID CRYSTAL DISPLAY PANEL - A method of manufacturing a transflective liquid crystal display panel includes the following steps. A substrate is provided. A first patterned conductive layer is formed on the substrate to form a gate electrode and a reflective electrode. A first insulating layer is formed on the first patterned conductive layer and the substrate. A patterned semiconductor layer is formed on the first insulating layer. A second patterned conductive layer is formed on the first insulating layer and the patterned semiconductor layer to form a source/drain electrode and a patterned reflective layer. A second insulating layer is formed on the second patterned conductive layer and the first insulating layer. Contact holes are formed in the first and the second insulating layer. A transmissive pixel electrode is formed and filled into the contact holes to be electrically connected respectively to the drain electrode, the reflective electrode, and the patterned reflective layer. | 02-16-2012 |
20120045857 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing light emitting device is revealed. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on the light emitting unit from covering the electrode. After forming the phosphor layer, flatten the phosphor layer and the protective layer. That means to remove part of the phosphor layer over the protective layer and the protective layer. Thus the electrode is not affected by the phosphor layer and conductivity of the electrode is improved to resolve phosphor thickness and uniformity problems of the light emitting device. Therefore, the thickness of the light emitting device with LED is effectively reduced and stability of white color temperature control is significantly improved. | 02-23-2012 |
20120045858 | CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material in direct contact with a second portion of the p-type region adjacent to the first portion. The first material and second material are formed in planar layers of substantially the same thickness. | 02-23-2012 |
20120070924 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer. | 03-22-2012 |
20120070925 | Method for Producing a Thin-Film Semiconductor Chip - Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point. | 03-22-2012 |
20120070926 | METHOD FOR PRODUCING A LIGHT-EMITTING DIODE - A method for producing a light-emitting diode includes providing a light-emitting diode chip including a semiconductor body, and applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or providing a radiation-transmissive carrier, applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material. | 03-22-2012 |
20120088322 | DICING-FREE LED FABRICATION - Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a substrate having opposite first and second sides. A semiconductor layer is formed on the first side of the substrate. The method includes forming a photoresist layer over the semiconductor layer. The method includes patterning the photoresist layer into a plurality of photoresist components. The photoresist components are separated by openings. The method includes filling the openings with a plurality of thermally conductive components. The method includes separating the semiconductor layer into a plurality of dies using a radiation process that is performed to the substrate from the second side. Each of the first regions of the substrate is aligned with one of the conductive components. | 04-12-2012 |
20120088323 | METHOD FOR FORMING LIGHT GUIDE LAYER IN SEMICONDUCTOR SUBSTRATE - A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer. | 04-12-2012 |
20120088324 | Method for Manufacturing Evaporation Donor Substrate and Light-Emitting Device - An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed. | 04-12-2012 |
20120094408 | METHOD FOR PRODUCING SURFACE EMITTING SEMICONDUCTOR DEVICE - A method for producing a surface emitting semiconductor device includes a step of forming a semiconductor stacked structure including an active layer, a first semiconductor layer containing aluminum on the active layer, and a DBR portion, on the first semiconductor layer, to include alternating stacked second semiconductor layers and third semiconductor layers having different aluminum contents; a step of forming a mesa portion by etching the DBR portion and the first semiconductor layer; an oxidation step of oxidizing the first semiconductor layer from a side face of the mesa portion toward the inside of the mesa portion to form an annular oxidized region inside the first semiconductor layer; a first etching step of selectively etching an oxidized region formed in the DBR portion; and a second etching step of removing a peripheral portion of the DBR portion. | 04-19-2012 |
20120094409 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A liquid crystal display (LCD) array substrate and a manufacturing method thereof are provided. The manufacturing method comprises depositing a semiconductor layer, a doped semiconductor layer and a metal film for source and drain electrodes sequentially on a base substrate and then forming a data line, a source electrode, a drain electrode and a thin film transistor (TFT) channel region by a first patterning process; depositing a first insulating film and a gate metal film sequentially and then forming a gate line and a gate electrode by a second patterning process and forming an insulating layer via hole in the first insulating layer above the drain electrode; depositing a transparent conductive film and then forming a pixel electrode by a third patterning process; and forming a second insulating layer. | 04-19-2012 |
20120100648 | METHOD FOR MANUFACTURING LIGHT EMITTING CHIP - A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels. | 04-26-2012 |
20120107978 | METHOD OF FABRICATING FLEXIBLE DISPLAY DEVICE - A method of fabricating a flexible display device includes: forming a plastic substrate on a carrier substrate, the plastic substrate including an active area and a non-active area surrounding the active area; forming an array element on the carrier substrate, the array element including a plurality of layers and having an average adhesion force among the plurality of layers; forming a first film on the array element, the first film having a first adhesion force; attaching a flexible printed circuit board to the plastic substrate; forming a second film on the first film, the second film having a second adhesion force greater than the first adhesion force; and detaching the plastic substrate from the carrier substrate. | 05-03-2012 |
20120107979 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved. | 05-03-2012 |
20120107980 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A liquid crystal display device and a method of fabricating the same is disclosed, to provide a liquid crystal display device to simplify the process and decrease the fabrication cost, the liquid crystal display device includes a first substrate having a color filter and a second substrate having a thin film transistor, wherein the first and second substrates face each other, a first passivation film formed on the thin film transistor, and a first column spacer formed integrally with the first passivation film. | 05-03-2012 |
20120107981 | SEMICONDUCTOR LIGHT SOURCES, SYSTEMS, AND METHODS - A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer. | 05-03-2012 |
20120129283 | LIGHT EMITTING DEVICE AND METHOD FOR ENHANCING LIGHT EXTRACTION THEREOF - A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N | 05-24-2012 |
20120156814 | Phase-shift mask with assist phase regions - A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R′ reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R′ are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Method of forming LEDs using the phase-shift mask are also disclosed. | 06-21-2012 |
20120164769 | LIQUID CRYSTAL DISPLAY DEVICE HAVING A LIGHT-SENSING THIN FILM TRANSISTOR DISPOSED AT A PIXEL REGION - The disclosure describes a liquid crystal display device with a sensing function and a method of fabricating the same. The device comprising gate and data lines crossing each other on a substrate, so as to define a pixel region including a pixel electrode; a first switching thin film transistor disposed at a crossing of the gate and data lines; a sensing thin film transistor, disposed at a predetermined portion of the pixel region, that senses external light; a sensing storage capacitor that stores a signal sensed by the sensing thin film transistor; and a second switching thin film transistor that receives the sensing signal stored and reads information that is externally inputted, wherein the sensing storage capacitor and the second switching thin film transistor are provided with a reflective region including a reflective electrode. | 06-28-2012 |
20120164770 | Radiation-Emitting Body and Method for Producing a Radiation-Emitting Body - A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified. | 06-28-2012 |
20120171790 | SURFACE EMITTING LASER, METHOD FOR PRODUCING SURFACE EMITTING LASER, AND IMAGE FORMING APPARATUS - A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or below the active layer using a first trench structure. A second current confinement layer having a second electrically conductive region and a second insulating region is formed above or below the first current confinement layer using a second trench structure. The first and second trench structures extend from a top surface of the upper multilayer mirror towards the substrate such that the second trench structure surrounds the first trench structure. When the surface emitting laser is viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region. | 07-05-2012 |
20120178194 | Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process. | 07-12-2012 |
20120178195 | Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System - The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process. | 07-12-2012 |
20120184057 | III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, where the semipolar primary surface includes a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a substrate and a semiconductor region, and the semiconductor region is formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively. | 07-19-2012 |
20120190141 | METHOD FOR MANUFACTURING POLYCHROMATIC LIGHT EMITTING DIODE DEVICE HAVING WAVELENGTH CONVERSION LAYER MADE OF SEMICONDCUTOR - A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength. | 07-26-2012 |
20120190142 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance. | 07-26-2012 |
20120208308 | METHOD MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device having a stacked body of nitride semiconductor including a light emitting layer. The method can include selectively etching a substrate in an atmosphere containing chlorine and nitrogen, using a carbon-containing mask formed on a surface of the substrate translucent to light emission emitted from the light emitting layer. The method can include forming a nitride semiconductor layer on the etched surface of the substrate, the nitride semiconductor having a higher refractive index than the substrate. In addition, the method can include forming the stacked body including the nitride semiconductor layer on the substrate. | 08-16-2012 |
20120208309 | GLASS PLATE FOR SUBSTRATE, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING TFT PANEL - The present invention relates to a glass plate for a substrate contains, as a glass matrix composition, in mol % on the oxide basis, SiO | 08-16-2012 |
20120214267 | ROUGHENING METHOD AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE HAVING ROUGHENED SURFACE - The present invention relates to a novel method for roughening an epitaxy structure layer, including: providing an epitaxy structure layer; and etching a surface of the epitaxy structure layer by an excimer laser having an energy density of 1000 mJ/cm | 08-23-2012 |
20120220060 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING APPARATUS - There is provided a method for manufacturing a light-emitting element comprising a semiconductor layered structure of Group III-V compound semiconductor layers; the manufacturing method including a step of forming a projection/depression structure on a light extraction surface of the semiconductor layered structure using as an etchant an aqueous solution containing hydrobromic acid. | 08-30-2012 |
20120220061 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion. | 08-30-2012 |
20120244653 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - A reflective film including Ag of an Ag alloy is patterned in a uniform thickness without decreasing reflectivity. The reflective film is formed on the entire surface of a first insulating film by sputtering, vacuum deposition or the like, and a barrier metal film having a given pattern is formed on the reflective film by a lift-off method. The reflective film is wet etched using a silver etching liquid. The barrier metal film is not wet etched by the silver etching liquid, and therefore functions as a mask, and the reflective film in a region on which the barrier metal film has been formed remains not etched. As a result, the reflective film having a desired patter can uniformly be formed on the first insulating film. | 09-27-2012 |
20120252145 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND MASK FOR APPLICATION OF PASTE USED THEREFOR - Provided are a mask for an application of paste and a method of manufacturing a semiconductor light emitting device by using the same. The method includes preparing a light emitting structure including first and second conductive semiconductor layers and an active layer disposed therebetween, which has at least one electrode formed on a surface of the light emitting structure; disposing a mask having an open part exposing a portion of the surface of the light emitting structure therethrough and a recess part corresponding the electrode in a region thereof on a surface of the light emitting structure; and applying wavelength conversion material-containing paste to the surface of the light emitting structure through the open part. | 10-04-2012 |
20120252146 | PHOTONIC QUANTUM RING LASER AND FABRICATION METHOD THEREOF - A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active alyer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light. | 10-04-2012 |
20120270345 | LED with Upstanding Nanowire Structure and Method of Producing Such - The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire. | 10-25-2012 |
20120270346 | ASYMMETRIC DBR PAIRS COMBINED WITH PERIODIC AND MODULATION DOPING TO MAXIMIZE CONDUCTION AND REFLECTIVITY, AND MINIMIZE ABSORPTION - Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field. | 10-25-2012 |
20120276669 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is placed on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the substrate. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate is removed. A second electrode is deposited on the first semiconductor layer. | 11-01-2012 |
20120282716 | SEMICONDUCTOR MEMBER, SEMICONDUCTOR ARTICLE MANUFACTURING METHOD, AND LED ARRAY USING THE MANUFACTURING METHOD - A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer ( | 11-08-2012 |
20120282717 | THIN FILM TRANSISTOR, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole. | 11-08-2012 |
20120288972 | LED PHOSPHOR INK COMPOSITION FOR INK-JET PRINTING - The present invention provides an ink jet printable phosphor ink composition for LED packaging that enables precision control of the amount and position of phosphor layers on the LED device or the LED device packaging. The ink includes both a UV-curable resin component and a thermally curable resin component. A phase-separation component prevents phase separation of the UV-curable resin component and the thermally curable resin component. Phosphor particles on the order of less than approximately 2 microns are uniformly dispersed throughout the ink composition. The phosphor ink composition is deposited through either thermal or piezoelectric ink jet printing; a thin layer is deposited in a desired pattern. UV curing (and, optionally, thermal curing) is used to fix each layer followed by subsequent deposition and curing. In this manner, undesirable phosphor settling does not occur and layers are selectively built up to form precise phosphor distributions. | 11-15-2012 |
20120288973 | DISPENSING METHOD AND DISPENSING APPARATUS - Disclosed are a dispensing method and a dispensing apparatus for dispensing a coating material over an object to be applied by a dispensing device within a dispensing chamber including a top plate, a bottom plate and side plates, in which a fresh air inlet and an exhaust outlet are formed in an upper portion and a lower portion of the dispensing chamber, respectively; at least a discharge hole of the dispensing device is exposed to within the upper portion of the dispensing chamber;
| 11-15-2012 |
20120295377 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate. | 11-22-2012 |
20120295378 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of making a semiconductor light-emitting device including (A) a light-emitting portion by laminating in sequence a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (B) a first electrode electrically connected to the first compound semiconductor layer; (C) a transparent conductive material layer on the second compound semiconductor layer; (D) an insulating layer on a transparent conductive material layer; and (E) a second reflective electrode that on the transparent conductive material layer and on the insulating layer in a continuous manner, wherein, that the areas of the active layer, the transparent conductive material layer, the insulating layer, and the second electrode S | 11-22-2012 |
20120309120 | METHOD FOR MANUFACTURING A COLOR FILTER SUBSTRATE - A light shield member in a LCD unit includes a first shield section that includes a pile of two color filter patterns and separates each effective opening of pixel from an effective opening of the adjacent pixel, and a second shield section that includes a pile of three color filter patterns and shields a TFT area including a TFT and the vicinity thereof. | 12-06-2012 |
20120315714 | TRANSPARENT POLARIZED LIGHT-EMITTING DEVICE - A polarized light-emitting device is fabricated by a method that includes forming a radiation-emitting layer. The radiation-emitting layer includes a radiation-emitting material that emits radiation having a wavelength included in an emission wavelength band. The radiation-emitting material is disposed between a transparent anode and a transparent cathode. An optically active reflective layer is disposed on the polarized light-emitting device. The optically active reflective layer is configured to reflect radiation having a wavelength included in a reflection wavelength band of the optically active reflective layer. The reflection wavelength band of the optically active reflective layer is adjusted to at least partially encompass the emission wavelength band of the radiation-emitting layer. | 12-13-2012 |
20120322181 | DEPOSITION OF THIN FILM DIELECTRICS AND LIGHT EMITTING NANO-LAYER STRUCTURES - A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices. | 12-20-2012 |
20120322182 | LIGHT BLOCKING MEMBER HAVING VARIABLE TRANSMITTANCE, DISPLAY PANEL INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF - A light blocking member having variable transmittance, a display panel including the same, and a manufacturing method thereof. A light blocking member having a variable transmittance according to one exemplary embodiment includes a polymerizable compound, a binder, and a thermochromic material that exhibits a black color at a temperature below a threshold temperature and becomes transparent at a temperature above the threshold temperature. | 12-20-2012 |
20120322183 | METHOD FOR FABRICATING LIGHT EMITTING DIODE - A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures. | 12-20-2012 |
20120322184 | BAND OFFSET IN ALINGAP BASED LIGHT EMITTERS TO IMPROVE TEMPERATURE PERFORMANCE - Methods for improving the temperature performance of alInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. Because the depth of the quantum wells in the valence band is more than is required although the addition of nitrogen reduces the depth of the quantum wells in the valence band. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band. | 12-20-2012 |
20120322185 | LIGHT-EMITTING DEVICE HAVING A ROUGHENED SURFACE WITH DIFFERENT TOPOGRAPHIES - This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface. | 12-20-2012 |
20120322186 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence. | 12-20-2012 |
20120329185 | DISPLAY APPARATUS AND METHOD OF FABRICATING THE SAME - A display apparatus that includes a first substrate, a second substrate, and a thin film transistor. The first substrate includes a fiber reinforced plastic substrate and a color filter layer formed on the fiber reinforced plastic substrate. The second substrate faces the first substrate. The thin film transistor is formed on the first substrate. | 12-27-2012 |
20130005060 | Methods for Pattering an Epitaxial Substrate and Forming a Light-Emitting Diode with Nano-Patterns - A method for patterning an epitaxial substrate with nano-patterns, includes: forming a plurality of zinc oxide nano-particles on an epitaxial substrate; dry-etching the epitaxial substrate exposed from the zinc oxide nano-particles to form nano-patterns corresponding to the zinc oxide nano-particles; and removing the zinc oxide nano-particles on the epitaxial substrate. A method for forming a light-emitting diode having a patterned epitaxial substrate with the nano-patterns is also disclosed. | 01-03-2013 |
20130011947 | METHOD OF FORMING A SAMPLED GRATING AND METHOD OF PRODUCING A LASER DIODE - A method of forming a sampled grating includes the steps of preparing a substrate; preparing a nano-imprinting mold including a pattern surface on which projections and recesses are periodically formed; preparing a mask including a light obstructing portion and a light transmitting portion that are alternately provided; forming a photoresist layer and a resin portion in that order on the substrate; forming a patterned resin portion having projections and recesses by pressing the pattern surface of the mold into contact with the resin portion and hardening the resin portion while maintaining the contact; exposing a portion of the photoresist layer by irradiating the photoresist layer with exposing light through the mask and the patterned resin portion; forming a patterned photoresist layer by developing the photoresist layer; and etching the substrate using the patterned photoresist layer. | 01-10-2013 |
20130017634 | WAVELENGTH CONVERTING LIGHT-EMITTING DEVICES AND METHODS OF MAKING THE SAME - Wavelength converting light-emitting devices and methods of making the same are provided. In some embodiments, the devices include a phosphor material region designed to convert the wavelength of emitted light. | 01-17-2013 |
20130023073 | USING NON-ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE - A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. A second temporary substrate is coupled to an upper surface of the epitaxial layer with a first adhesive layer. The first temporary substrate is removed from the epitaxial layer to expose a bottom surface of the epitaxial layer. A permanent semiconductor substrate is coupled to the bottom surface of the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the upper surface of the epitaxial layer. A plurality of semiconductor light emitting devices are formed from the epitaxial layer on the permanent semiconductor substrate. | 01-24-2013 |
20130023074 | USING ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE - A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. The epitaxial layer is separated into a plurality of epitaxial structures on the first temporary substrate. A second temporary substrate is coupled to the epitaxial layer with a first adhesive layer and the first temporary substrate is removed from the epitaxial layer. A permanent semiconductor substrate is coupled to the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the epitaxial layer. The permanent semiconductor substrate is separated into a plurality of portions with each portion corresponding to at least one of the plurality of epitaxial structures to form a plurality of semiconductor light emitting devices. | 01-24-2013 |
20130023075 | Method of Forming Process Substrate Using Thin Glass Substrate and Method of Fabricating Flat Display Device Using the Same - A method for fabricating a process substrate includes: providing a first substrate; providing a substrate and an auxiliary substrate; contacting the substrate and the auxiliary substrate with each other in a vacuum state, thereby forming micro spaces of a vacuum state between the substrate and the auxiliary substrate; and increasing a pressure at the outside of the contacted substrate and auxiliary substrate to attach the substrate and the auxiliary substrate to each other by a pressure difference between the micro spaces and the outside of the contacted substrate and auxiliary substrate. | 01-24-2013 |
20130023076 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - A light-emitting device manufacturing method comprises the steps of irradiating a substrate | 01-24-2013 |
20130029440 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 | 01-31-2013 |
20130045551 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate. | 02-21-2013 |
20130045552 | Light emitting diode manufacturing method - A method of making a light emitting diode (LED) having an optical element is provided, comprising: providing a curable liquid polysiloxane/TiO | 02-21-2013 |
20130045553 | DISPLAY DEVICE, DISPLAY APPARATUS AND METHOD OF ADJUSTING A COLOR SHIFT OF WHITE LIGHT IN SAME - A display device includes: an optical cavity portion; and a light emitting layer, wherein a peak wavelength of an internal emission spectrum of the light emitting layer is identical to a peak wavelength of a multiple interference filter spectrum of the optical cavity portion, and wherein a color shift Δuv of white light in the display device at a viewing angle of 60° is less than or equal to 0.015. A method of adjusting a color shift of white light in a display device includes: setting a peak wavelength of a multiple interference filter spectrum obtained by an optical cavity portion in the display device equal to a peak wavelength of an internal emission spectrum of a light emitting layer in the display device; and adjusting a position of the light emitting layer in a thickness direction thereof | 02-21-2013 |
20130052765 | ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - The present invention relates to an organic electro-luminescence display device and a method for fabricating the same, in which damage to a pad portion is prevented for improving yield. | 02-28-2013 |
20130078749 | ORGANIC LIGHT EMITTING DEVICE - The organic light emitting device of the present invention has a plurality of emission layers between an anode and a cathode, and the emission layers are separated from each other by an equipotential surface forming layer or a charge generating layer. The feature of the present invention resides in that the organic light emitting device has, at least either inside or outside the device, a light scattering means for scattering light emitted from the emission layers. The organic light emitting device can reduce the angle dependency of the emission brightness and the emission color by outputting the light emitted from the emission layers in a condition where the light is scattered by the light scattering means. | 03-28-2013 |
20130078750 | FABRICATING METHOD OF NANO STRUCTURE FOR ANTIREFLECTION AND FABRICATING METHOD OF PHOTO DEVICE INTEGRATED WITH ANTIREFLECTION NANO STRUCTURE - A method of fabricating nanostructure for antireflection and a method of fabricating a photo device integrated with the nanostructure for antireflection are provided. The fabrication of the nanostructure for antireflection includes coating a solution containing a combination of metal ions with organic or inorganic ions on a substrate, sintering the coated solution using an annealing process to grow nanoscale metal particles, and chemically etching the substrate using the metal particles as mask or accelerator to form a subwavelength nanostructure on the surface of the substrate, thereby manufacturing the nanostructure for antireflection without an apparatus requiring a vacuum state using a simple method for a short amount of time to minimize reflection of light at an interface between a semiconductor material and the air, and producing a photo device having good luminous efficiency and performance at low cost in large quantities by applying it to the photo device. | 03-28-2013 |
20130089938 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, wherein the light emitting diode chip comprises a first semiconductor layer, an active layer and a second semiconductor layers stacked together in that order. A patterned mask layer is located on a surface of the first semiconductor layer, wherein the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side, and a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed portion of the first semiconductor layer is etched to form a protruding pair. A number of M-shaped three-dimensional nano-structures are formed by removing the mask layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 04-11-2013 |
20130089939 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, the light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layers stacked on a surface of a substrate in that order. A patterned mask layer is located on the second semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side. The second semiconductor layer is etched to form a number of three-dimensional nano-structures preform. The mask layer is removed to form a number of M-shaped three-dimensional nano-structures. The second semiconductor layer and the active layer are etched to expose a portion of the first semiconductor layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 04-11-2013 |
20130095585 | MULTI-FIELD ARRANGING METHOD OF LED CHIPS UNDER SINGLE LENS - A multi-field arranging method of LED chips under a single lens includes the steps of: setting a first concentric circle on a bottom of a hemispherical lens, wherein the first concentric circle is centered at an axis of the hemispherical lens; equidistantly arranging plural first LED chips on the first concentric circle; setting a second concentric circle, which is also centered at the same axis as the first concentric circle, and the second concentric circle is larger than the first concentric circle in radius; and equidistantly arranging plural second LED chips and plural third LED chips on the second concentric circle. The present invention allows the LED chips to present symmetrical light patterns through the hemispherical lens, thereby obtaining a light field with evener color mixture and evener color temperature distribution in every illuminating direction. | 04-18-2013 |
20130122619 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer is divided into individual optical devices along streets. A modified layer is formed by applying a laser beam to a sapphire substrate constituting the optical device wafer along the streets from the back side of the sapphire substrate such that the focal point of the laser beam is set inside the sapphire substrate, thereby forming a modified layer inside the sapphire substrate along each street. A reflective film is formed on the back side of the sapphire substrate and the reflective film is cut by applying a laser beam along the streets from the back side of the sapphire substrate. The wafer is divided by applying an external force to the optical device wafer to thereby break the optical device wafer along each street where the modified layer is formed, so that the optical device wafer is divided into the individual optical devices. | 05-16-2013 |
20130122620 | METHOD OF FORMING LIGHT CONVERTING LAYER, METHOD OF MANUFACTURING LIGHT CONVERTING MEMBER, AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - Provided Is a method of forming a light converting layer capable of uniformly distributing fluorescent material particles, a method of manufacturing a light converting member capable of distributing fluorescent material particles, and a method of manufacturing a light emitting device capable of controlling color irregularities. The method of forming a light converting member comprising steps of, preparing fluorescent material particles, forming a bonding layer made of a resin on a base body; incorporating the fluorescent material particles in the bonding layer; and hardening the bonding layer. | 05-16-2013 |
20130143340 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer. | 06-06-2013 |
20130143341 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer. | 06-06-2013 |
20130143342 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 06-06-2013 |
20130143343 | METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE - A method of manufacturing a light-emitting device including a light-emitting element which emits light with a predetermined wavelength and a wavelength conversion portion including a fluorescent substance which is excited by the light emitted from the light-emitting element to emit fluorescence with a wavelength different from the predetermined wavelength, includes the followings. First, spraying so as to apply a liquid mixture containing a layered silicate mineral and a translucent ceramic precursor on the light-emitting element from a nozzle is performed while the nozzle is moved relative to the light-emitting element. Subsequently, forming of the wavelength conversion portion by heating the sprayed and applied liquid mixture is performed. | 06-06-2013 |
20130149803 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE - Provided is a method of fabricating an organic light emitting diode. The method may include preparing a substrate, forming a textured portion on the substrate, the textured portion including protruding patterns randomly and irregularly arranged on the substrate, forming a planarization layer on the substrate to planarize the substrate formed with the textured portion, forming a first electrode on the planarization layer, forming an organic light emitting layer on the first electrode, and forming a second electrode on the organic light emitting layer. | 06-13-2013 |
20130149804 | OPTICAL SEMICONDUCTOR DEVICE AND PUMPING LIGHT SOURCE FOR OPTICAL FIBER AMPLIFIER - A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated. | 06-13-2013 |
20130157397 | MANUFACTURING METHOD, SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, AND IMAGE FORMING APPARATUS - A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body. | 06-20-2013 |
20130171754 | ELECTROLUMINESCENT DEVICES AND THEIR MANUFACTURE - A process for producing a conformal electroluminescent system. An electrically conductive base backplane film layer is applied upon a substrate. A dielectric film layer is applied upon the backplane film layer, then a phosphor film layer is applied upon the dielectric film layer. An electrode film layer is applied upon the phosphor film layer using a substantially transparent, electrically conductive material. An electrically conductive bus bar may be applied upon the electrode film layer. Preferably, the backplane film layer, dielectric film layer, phosphor film layer, electrode film layer and bus bar are aqueous-based and are applied by spray conformal coating. The electroluminescent phosphor is excitable by an electrical field established across the phosphor film layer such that the device emits electroluminescent light upon application of an electrical charge between the backplane film layer and at least one of the electrode film layer and the bus bar. | 07-04-2013 |
20130178004 | Method for Manufacturing Light-Emitting Device - A full-color light-emitting device is achieved with plural kinds of light-emitting elements in each of which a stacked layer of a first material layer formed selectively with a droplet discharge apparatus and a second material layer formed by vapor-deposition method using the conductive-surface plate on which a layer containing an organic compound is formed is provided between a pair of electrodes. The first material layer is a layer in which an organic compound and a metal oxide which is an inorganic compound are mixed. By adjusting the thickness of the first material layer of each light-emitting element, which is different depending on an emission color, a blue light emission component, a green light emission component, or a red light emission component among a plurality of components for white light emission can be selectively emphasized and taken out by light interference phenomenon. | 07-11-2013 |
20130189806 | PROCESSING METHOD FOR WAFER - A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer. | 07-25-2013 |
20130203194 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - Sample A is produced by sequentially forming a first insulating film of SiO | 08-08-2013 |
20130210180 | LIGHT EMITTING DIODES - A method of producing a light emitting device comprises providing a wafer structure including a light emitting layer of III-nitride semiconductor material; dry etching the wafer at least part way through the light emitting layer so as to leave exposed surfaces of the emitting layer; and treating the exposed surfaces of the emitting layer with a plasma. The treatment may be using hot nitric acid or a hydrogen plasma. | 08-15-2013 |
20130210181 | PROCESS FOR PRODUCING A LAYER COMPOSITE CONSISTING OF A LUMINESCENCE CONVERSION LAYER AND A SCATTERING LAYER - A process of producing a layer composite includes a luminescence conversion layer and a scattering layer, wherein a press having a first pressing tool with a cavity and a second pressing tool is used including introducing a first polymer including a luminescence conversion substance into the cavity, inserting a film between the first and second tools, closing the press and carrying out a first pressing, hardening the first polymer to form a luminescence conversion layer in the press, opening the press, wherein the luminescence conversion layer adhering to the film remains in the press, introducing a second polymer including scattering particles into the cavity, closing the press and carrying out a second pressing, hardening the second polymer to form a scattering layer disposed on the luminescence conversion layer, opening the press, and removing the support film with the layer composite including the luminescence conversion layer and the scattering layer. | 08-15-2013 |
20130217161 | METHOD FOR MANUFACTURING INTEGRAL IMAGING DEVICE - In a method for manufacturing an integral imaging device, a layer of curable adhesive is first applied on a flexible substrate and half cured such that the curable adhesive is solidified but is capable of deforming under external forces. Then the curable adhesive is printed into a lenticular lens having a predetermined shape and size using a roll-to-roll processing device and fully cured such that the curable adhesive is capable of withstanding external forces to hold the predetermined shape and size. Last, a light emitting diode display is applied on the flexible substrate opposite to the lenticular lens such that an image plane of the light emitting diode display coincides with a focal plane of the lenticular lens. | 08-22-2013 |
20130224892 | OMNIDIRECTIONAL REFLECTOR - A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer. | 08-29-2013 |
20130224893 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A buffer layer is grown on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the buffer layer. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate and the buffer layer are removed. A second electrode is deposited on the first semiconductor layer. | 08-29-2013 |
20130244359 | POLISHING COATED SUBSTRATES - A process for the production of an optoelectronic device, such as a photovoltaic cell or a light emitting diode is disclosed. The process comprises providing a substrate having a conductive coating on at least one surface, the conductive coating having an initial roughness and at least one or more spikes, and applying a functional component to the coated surface of the substrate. The surface of the substrate having the conductive coating has been subjected to a polishing step using at least one brush to reduce the height of the spikes inherent to the conductive coating and to give the conductive coating a final roughness. By reducing the spikes there is less potential for the optoelectronic device to suffer from electrical shunts which reduce the efficiency of the device. | 09-19-2013 |
20130244360 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting element. The method can include bonding a stacked main body of a structural body to a substrate main body. The structural body includes a growth substrate and the stacked main body provided on the growth substrate. The stacked main body includes a first nitride semiconductor film, a light emitting film provided on the first nitride semiconductor film, and a second nitride semiconductor film provided on the light emitting film. The method can include removing the growth substrate. The method can include forming a plurality of stacked bodies. The method can include forming an uneven portion in a surface of a first nitride semiconductor layer. The method can include forming a plurality of the semiconductor light emitting elements. | 09-19-2013 |
20130244361 | METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT - A method of manufacturing a semiconductor element includes forming an element structure layer having a semiconductor layer, on a first substrate. The method also includes forming a first bonding layer on the element structure layer. The method also includes forming a second bonding layer on a second substrate. The method also includes performing heating pressure-bonding on the first and second bonding layers, with the first and second bonding layers facing each other. One of the first bonding layer and the second bonding layer is an AU layer, and the other is an AuSn layer. The AuSn layer has a surface layer having an Sn content of between 85 wt % (inclusive) and 95 wt % (inclusive). | 09-19-2013 |
20130260491 | METHOD FOR MAKING LIGHT EMITTING DIODES - A method for making a LED comprises following steps. A substrate having a first surface and a second surface is provided. A patterned mask layer is applied on a first surface. A number of three-dimensional nano-structures are formed on the first surface and the patterned mask layer is removed. A first semiconductor layer, an active layer and a second semiconductor layer are formed on the second surface. A first electrode and a second electrode are formed to electrically connect with the first semiconductor layer and the second semiconductor pre-layer respectively. | 10-03-2013 |
20130260492 | METHOD FOR MAKING LIGHT EMITTING DIODES - A method for making a LED comprises following steps. A substrate having a surface is provided. A first semiconductor layer, an active layer and a second semiconductor pre-layer is formed on the surface of the substrate. A patterned mask layer is applied on a surface of the second semiconductor pre-layer. A number of three-dimensional nano-structures is formed on the second semiconductor pre-layer and the patterned mask layer is removed. The substrate is removed and a first electrode is formed on a surface of the first semiconductor layer away from the active layer. A second electrode is formed to electrically connect with the second semiconductor pre-layer. | 10-03-2013 |
20130260493 | METHODS FOR MAKING LIGHT EMITTING DIODES AND OPTICAL ELEMENTS - A method for making a LED comprises following steps. A substrate having a surface is provided. A first semiconductor layer, an active layer and a second semiconductor pre-layer is formed on the surface of the substrate. A first electrode and a second electrode are formed to electrically connect with the first semiconductor layer and the second semiconductor pre-layer respectively. A patterned mask layer is applied on a surface of the second semiconductor pre-layer. A number of three-dimensional nano-structures are formed on the second semiconductor pre-layer and the patterned mask layer is removed. A method for making an optical element is also provided. | 10-03-2013 |
20130260494 | METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE WITH WAVELENGTH CONVERSION LAYERS - A method for fabricating light emitting diode (LED) dice includes the steps of mixing wavelength conversion particles in a base material to a first weight percentage, mixing reflective particles in the base material to a second weight percentage, curing the base material to form a wavelength conversion layer having a selected thickness, and attaching the wavelength conversion layer to a die. | 10-03-2013 |
20130260495 | LIGHT EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME - Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer. | 10-03-2013 |
20130267051 | Method for Producing a Luminescence Conversion Substance Layer, a Composition Therefor and a Component Comprising such a Luminescence Conversion Substance Layer - One embodiment of the invention describes a method for producing a luminescence conversion substance layer on a substrate with a semiconductor element that emits a primary radiation during operation. A composition includes a luminescence conversion substance, a matrix material and a solvent. The composition is applied to a substrate. At least part of the solvent is removed, with the result that the luminescence conversion substance layer is formed on the substrate. | 10-10-2013 |
20130273676 | System for Wafer-Level Phosphor Deposition - System for wafer-level phosphor deposition. In an aspect, a semiconductor wafer is provided that includes a plurality of LED dies wherein at least one die includes an electrical contact, a photo-resist post covering the electrical contact, and a phosphor deposition layer covering the semiconductor wafer and surrounding the photo-resist post. In another aspect, a semiconductor wafer is provided that comprises a plurality of LED dies wherein at least one die comprises an electrical contact, a phosphor deposition layer covering the semiconductor wafer, and a cavity in the phosphor deposition layer exposing the at least one electrical contact. | 10-17-2013 |
20130273677 | SURFACE EMITTING LASER DEVICE, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, IMAGE FORMING APPARATUS, AND MANUFACTURING METHOD OF SURFACE EMITTING LASER DEVICE - A disclosed surface emitting laser device includes a light emitting section having a mesa structure where a lower reflection mirror, an oscillation structure, and an upper reflection mirror are laminated on a substrate, the oscillation structure including an active layer, the upper reflection mirror including a current confined structure where an oxide surrounds a current passage region, a first dielectric film that coats the entire surface of an emitting region of the light emitting section, the transparent dielectric including a part where the refractive index is relatively high and a part where the refractive index is relatively low, and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the dielectric film includes a lower dielectric film and an upper dielectric film, and the lower dielectric film is coated with the upper dielectric film. | 10-17-2013 |
20130280836 | METHOD AND SYSTEM FOR PRODUCING HIGH RESOLUTION PATTERNS IN REGISTRATION ON THE SURFACE OF A SUBSTRATE - A method of selectively applying a material to a surface of a substrate from a stamp with a raised surface using an energy activated release layer is provided. The release layer is applied to at least a first portion of a surface of the stamp. A layer of the material is applied to the raised surface of the stamp. The raised surface of the stamp is placed in contact with the surface of the substrate such that the material layer is situated therebetween. Thereafter, the release layer is activated with energy, causing the material layer to release from the raised surface of the stamp, and to adhere to the surface of the substrate. Alternatively, the entire stamp surface may be coated with the release layer and the release layer may be selectively activated in the areas in which the material on the stamp surface is in contact with the substrate. | 10-24-2013 |
20130288409 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - An exemplary method for manufacturing an LED includes steps: providing a substrate with a first electrode and a second electrode; providing an isosceles trapezoidal LED chip and making the LED chip electrically connecting the first electrode and the second electrode; providing a mold with a cavity and setting the mold on the substrate to make the LED chip received in the cavity, an outer periphery of the LED chip spaced from confronting edges of the mold defining the cavity to define a channel therebetween, and a width of the channel being uniform; providing phosphor glue and filling the phosphor glue in the channel to make the phosphor glue enclose the LED chip therein; solidifying the phosphor glue to form a phosphor layer covering the LED chip and removing the mold. | 10-31-2013 |
20130302922 | QUASICRYSTALLINE STRUCTURES AND USES THEREOF - This invention relates generally to the field of quasicrystalline structures. In preferred embodiments, the stopgap structure is more spherically symmetric than periodic structures facilitating the formation of stopgaps in nearly all directions because of higher rotational symmetries. More particularly, the invention relates to the use of quasicrystalline structures for optical, mechanical, electrical and magnetic purposes. In some embodiments, the invention relates to manipulating, controlling, modulating and directing waves including electromagnetic, sound, spin, and surface waves, for pre-selected range of wavelengths propagating in multiple directions. | 11-14-2013 |
20130302923 | METHOD FOR MANUFACTURING AN ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE - Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter. | 11-14-2013 |
20130309793 | ORGANIC LIGHT-EMITTING DISPLAY HAVING LIGHT BLOCKING LAYER FORMED OVER PIXEL DEFINING LAYER - An organic light-emitting display includes a substrate including a pixel region and a transistor region; a first transparent electrode and a second transparent electrode formed over the pixel region and the transistor region of the substrate, respectively; a gate electrode formed over the second transparent electrode; a gate insulating film formed over the gate electrode; a semiconductor layer formed over the gate insulating film; a source and drain electrode having an end connected to the semiconductor layer and the other end connected to the first transparent electrode; a pixel defining layer disposed over the source and drain electrode to cover the source and drain electrode and having an opening disposed over the first transparent electrode; a light-blocking layer formed over the pixel defining layer; and an organic light-emitting layer formed over the first transparent electrode. | 11-21-2013 |
20130309794 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be formed on the surfaces of the plurality of grooves or the mesa between each of the plurality of grooves. Therefore, light generated in the active layer may be reflected by the reflective layer, and extracted to an external location. | 11-21-2013 |
20130330859 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer are then disposed on a surface of the second semiconductor layer away from the substrate in the listed sequence. The substrate and the buffer layer are removed to expose the first semiconductor layer. A first electrode is applied on an exposed surface of the first semiconductor layer and a second electrode is applied to electrically connect with the second semiconductor layer. | 12-12-2013 |
20130330860 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, a second semiconductor layer are grown on the epitaxial growth surface in the listed sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, a first optical symmetric layer, and a second optical symmetric layer are then disposed on a surface of the second semiconductor layer away from the substrate in the listed sequence. A first electrode is applied to electrically connect with the first semiconductor layer and a second electrode is applied to electrically connect with the second semiconductor layer. | 12-12-2013 |
20130330861 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. A first electrode is applied on an exposed surface of the first semiconductor layer. A second electrode is applied to electrically connect with the second semiconductor layer. | 12-12-2013 |
20130330862 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in sequence. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. a second optical symmetric layer is then disposed on a surface of the first symmetric layer away from the substrate. A first electrode is applied to electrically connect the first semiconductor layer. A second electrode is applied to electrically connect the second semiconductor layer. | 12-12-2013 |
20130330863 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. The substrate is removed. A first electrode is configured to cover entire exposed surface of the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330864 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A first optical symmetric layer is formed on the second semiconductor layer. A metallic layer is applied on the first optical symmetric layer. A second optical symmetric layer is formed on the metallic layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330865 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer. | 12-12-2013 |
20130330866 | LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a method of fabricating a patterned substrate for fabricating a light emitting diode (LED), the method including forming an aluminum layer on a substrate, forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer, partially etching a surface of the substrate using the aluminum layer with the large number of the holes as a shadow mask, thereby forming patterns, and removing the aluminum layer from the substrate. | 12-12-2013 |
20130337595 | Light-Emitting Device and Method for Manufacturing the Same - The present invention provides an organic light-emitting element where a lower electrode, an organic compound layer and an upper electrode are laminated on a substrate, wherein the upper electrode of the organic EL element is formed by a laminate of at least a conductive first inorganic film, a conductive organic film and a conductive second inorganic film, in order to suppress the occurrence of dark spot, so that the occurrence of pinholes in the upper electrode leading to dark spots is suppressed. Here, pinholes refer to holes in the upper electrode that penetrate upper electrode from the organic compound layer underneath to the atmosphere above. | 12-19-2013 |
20130344633 | MANUFACTURING METHOD FOR LIGHT EMITTING DEVICE AND PHOSPHOR MIXTURE - Disclosed is a manufacturing method for a light emitting device Including a light emitting element and a wavelength converting part which converts light emitted from the light emitting element into light of another wavelength. The manufacturing method includes a first step and a second step. The first step is a step of applying onto the light emitting element and drying a first liquid mixture in which phosphor and plate-like particles are dispersed in polyhydric alcohol having a valence of two or more to form a phosphor layer. The second step is a step of applying onto the phosphor layer and firing a second liquid mixture in which a translucent ceramic precursor is dispersed in a solvent to form the wavelength converting part. | 12-26-2013 |
20140004635 | METHOD OF MANUFACTURING AN LED | 01-02-2014 |
20140004636 | METHOD OF MANUFACTURING AN LED | 01-02-2014 |
20140004637 | METHOD OF MANUFACTURING AN LED | 01-02-2014 |
20140017830 | PLANARIZED TCO-BASED ANODE FOR OLED DEVICES, AND/OR METHODS OF MAKING THE SAME - Certain example embodiments relate to organic light emitting diode (OLED)/polymer light emitting diode (PLED) devices, and/or methods of making the same. A first transparent conductive coating (TCC) layer is disposed, directly or indirectly, on a glass substrate. An outermost major surface of the TCC layer is planarized by exposing the outermost major surface thereof to an ion beam. Following said planarizing, the first TCC layer has an arithmetic mean value RMS roughness (Ra) of less than 1.5 nm. A hole transporting layer (HTL) and an electron transporting and emitting layer (ETL) are disposed, directly or indirectly, on the planarized outermost major surface of the first TCC layer. A second TCC layer is disposed, directly or indirectly, on the HTL and the ETL. One or both TCC layers may include ITO. The substrate and/or an optional optical out-coupling layer stack system may be planarized using an ion beam. | 01-16-2014 |
20140017831 | METHOD FOR ENHANCING ELECTRICAL INJECTION EFFICIENCY AND LIGHT EXTRACTION EFFICIENCY OF LIGHT-EMITTING DEVICES - A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N | 01-16-2014 |
20140017832 | ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Provided are an organic light emitting diode and a method of fabricating the same. The organic light emitting diode may include a light-scattering layer, a first electrode, an organic light-emitting layer, and a second electrode, which are sequentially stacked on a substrate, wherein the light-scattering layer may include uneven shaped nanostructures having irregular width and spacing. The method of fabricating the organic light emitting diode may include sequentially stacking a light-scattering medium layer and a metal alloy layer on a substrate, heat treating the metal alloy layer to form etching mask patterns, etching the light-scattering medium layer by using the etching mask patterns to form a light-scattering layer, removing the etching mask patterns, and forming a planarizing layer on the light-scattering layer. | 01-16-2014 |
20140030830 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DEVICE - Provided is a method of fabricating an organic light emitting device that may form a light scattering layer having an irregular random structure at a low temperature. The method includes providing a substrate coated with a precursor layer; sequentially forming a metal layer and an organic layer on the precursor layer; performing a heat treatment of the organic layer to form an organic mask from the organic layer; patterning the metal layer by using the organic mask to form a metal mask; patterning the precursor layer by using the metal mask to form a light scattering layer having an irregular random structure; removing the metal mask and the organic mask; and sequentially stacking a planarization layer, a first electrode, an organic light emitting layer, a second electrode, and a passivation layer on the light scattering layer. | 01-30-2014 |
20140030831 | MANUFACTURING METHOD OF PIXEL STRUCTURE - A manufacturing method of pixel structure includes forming a first conductive layer on a substrate and forming a first insulation layer thereon; forming a second conductive layer on the first insulation layer; forming a second insulation layer on the second conductive layer; forming a semiconductor layer on the second insulation layer above the gate; forming a third conductive layer on the second insulation layer, wherein the gate, the semiconductor layer, the source, and the drain together constitute a thin film transistor, and the first electrode, the second electrode, and the third electrode together constitute a capacitor; forming a third insulation layer on the third conductive layer; and forming a pixel electrode on the third insulation layer, the pixel electrode being electrically connected to the drain. | 01-30-2014 |
20140030832 | Pixelated Scintillation Detector and Method of Making Same - A scintillation detector may include a pixelated scintillation crystal mechanically and optically coupled to a position sensitive photodetector, such as a position sensitive photomultiplier tube (PSPMT). The pixelated scintillation crystal may be coupled to the position sensitive photodetector without using a window between the crystal and photodetector. According to one method of constructing the scintillation detector, a solid scintillation crystal may be coupled to the position sensitive photodetector and cut while coupled to the photodetector to form the pixelated scintillation crystal. | 01-30-2014 |
20140038328 | Method for manufacturing semiconductor light emitting device - A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex. | 02-06-2014 |
20140051197 | METHOD FOR FABRICATING A VERTICAL LIGHT EMITTING DIODE (VLED) DIE HAVING EPITAXIAL STRUCTURE WITH PROTECTIVE LAYER - A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a substrate; forming an epitaxial structure on the substrate; forming an electrically insulative insulation layer covering the lateral surfaces of the epitaxial structure; forming an electrically non-conductive material on the electrically insulative insulation layer; and forming a mirror on the p-doped layer, with the electrically insulative insulation layer configured to protect the epitaxial structure during formation of the mirror. | 02-20-2014 |
20140057375 | WAVELENGTH CONVERTING MATERIAL DEPOSITION METHODS AND ASSOCIATED ARTICLES - Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided. | 02-27-2014 |
20140057376 | Deposition Donor Substrate and Method for Manufacturing Light-Emitting Device - One surface of a first substrate provided with at least light-absorbing layers separately formed, partition layers each formed between the light-absorbing layers and having an inverse taper shape, and material layers formed on the light-absorbing layers and on the partition layers so that the material layers are separated from each other is disposed to face a deposition target surface of a second substrate; light irradiation is performed from the other surface of the first substrate, only the material layers in regions overlapped with the light-absorbing layers are heated and evaporated to the deposition target surface of the second substrate. | 02-27-2014 |
20140057377 | METHOD FOR MANUFACTURING DEVICE - A method for manufacturing a device having a concavo-convex structure includes forming an organic resist film on an n-type semiconductor layer in which a fine concavo-convex structure is to be formed; forming a silicon-containing resist film on the organic resist film; patterning the silicon-containing resist film by nanoimprint; oxidizing the silicon-containing resist film with oxygen-containing plasma to form a silicon oxide film; dry-etching the organic resist film by using the silicon oxide film as an etching mask; dry-etching the n-type semiconductor layer by using the silicon oxide film and the organic resist film as an etching masks; and removing the silicon oxide film and the organic resist film. | 02-27-2014 |
20140065742 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode includes the following steps. A first epitaxial substrate having a first epitaxial growth surface is provided. A carbon nanotube layer is placed on the first epitaxial growth surface. An intrinsic semiconductor layer is grown on the first epitaxial growth surface epitaxially. A second epitaxial substrate is formed by removing the carbon nanotube layer, wherein the second epitaxial substrate has a second epitaxial growth surface. A first semiconductor layer, an active layer and a second semiconductor layer are grown on the second epitaxial growth surface in that order. A part of the first semiconductor layer is exposed by etching a part of the active layer and the second semiconductor layer. A first electrode is applied on the first semiconductor layer and a second electrode is applied on the second semiconductor layer. | 03-06-2014 |
20140065743 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE DIE - An exemplary method of manufacturing a light emitting diode (LED) die includes steps: providing a preformed LED structure, the LED structure including a first substrate, and a nucleation layer, a buffer layer, an N-type layer, a muti-quantum well layer and an P-type layer formed successively on the first substrate; forming at least one insulation block on the P-type layer; forming a mirror layer on the on the P-type layer and covering the insulation block; forming a conductive second substrate on the mirror layer; removing the first substrate, the nucleation layer and the buffer layer and exposing a bottom surface of the N-type layer; and disposing one N-electrode on the exposed surface of the N-type layer. The N-electrode is located corresponding to the insulation block. | 03-06-2014 |
20140065744 | METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE - A liquid photocurable resin composition not containing a thermal polymerization initiator is applied to a surface of a light-transmitting cover member having a light-shielding layer or a surface of an image display member, irradiated with ultraviolet rays under an atmosphere where the oxygen concentration is significantly decreased and cured, to form a light-transmitting cured resin layer. Subsequently, the image display member and the light-transmitting cover member are stacked through the light-transmitting cured resin layer to manufacture an image display device of the present invention. | 03-06-2014 |
20140065745 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A manufacturing method for an LED (light emitting diode) includes following steps: providing a substrate; disposing a transitional layer on the substrate, the transitional layer comprising a planar area with a flat top surface and a patterned area with a rugged top surface; coating an aluminum layer on the transitional layer; using a nitriding process on the aluminum layer to form an AlN material on the transitional layer; disposing an epitaxial layer on the transitional layer and covering the AlN material, the epitaxial layer contacting the planar area and the patterned area of the transitional layer, a plurality of gaps being defined between the epitaxial layer and the slugs of the second part of the AlN material in the patterned area of the transitional layer. | 03-06-2014 |
20140080236 | MULTICHIP LIGHT EMITTING DIODE (LED) AND METHOD OF MANUFACTURE - The present invention provides a multichip LED and method of manufacture in which white light is produced. A plurality of electrically interconnected LED chips is selected for conversion of light to white light. The LED chips comprise: a blue LED chip, a red LED chip, a green LED chip, and a target LED chip whose light output is converted to white light. A wavelength of a light output by one or more of the plurality of chips will be measured. Based on the wavelength measurement, a conformal coating is applied to the one or more of the LED chips. The conformal coating has a phosphor ratio that is based on the wavelength. The phosphor ratio is comprised of at least one of the following colors: yellow, green, or red. Using the conformal coating, the light output of the target LED is then converted to white light. | 03-20-2014 |
20140080237 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY - In a method of manufacturing an organic electroluminescent display, when a substrate including first and second pixel areas is prepared, a first mask including openings is disposed on the substrate to respectively correspond to the first and second pixel areas, and a second mask including an opening corresponding to the first pixel area is disposed on the first mask to expose the first pixel area and cover the second pixel area. Then, a first organic light emitting material is provided to the substrate to form the first organic light emitting material in the first pixel area and the second mask is removed from the substrate to expose the first and second pixel areas. Thereafter, a second organic light emitting material is provided to the substrate to form the second light emitting material in the first and second pixel areas and the first mask is removed from the substrate. | 03-20-2014 |
20140087500 | TRANSPARENT CONDUCTIVE ELECTRODE STACK CONTAINING CARBON-CONTAINING MATERIAL - A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material. | 03-27-2014 |
20140087501 | DOPED GRAPHENE TRANSPARENT CONDUCTIVE ELECTRODE - Graphene is used as a replacement for indium tin oxide as a transparent conductive electrode which can be used in an organic light emitting diode (OLED) device. Using graphene reduces the cost of manufacturing OLED devices and also makes the OLED device extremely flexible. The graphene is chemically doped so that the work function of the graphene is shifted to a higher value for better hole injection into the OLED device as compared to an OLED device containing an undoped layer of graphene. An interfacial layer comprising a conductive polymer and/or metal oxide can also be used to further reduce the remaining injection barrier. | 03-27-2014 |
20140087502 | LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. | 03-27-2014 |
20140127841 | LIGHT EMITTING DEVICES HAVING LIGHT COUPLING LAYERS WITH RECESSED ELECTRODES - A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer. | 05-08-2014 |
20140134770 | METHODS OF MANUFACTURING OPTICAL FILTERS AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES HAVING OPTICAL FILTERS - A method of manufacturing an optical filter includes preparing a substrate having a panel region, a peripheral region, and an alignment region, forming an outer black matrix on the substrate, such that the outer black matrix surrounds the panel region, forming a dummy black matrix on the substrate, such that the dummy black matrix is in the peripheral region while exposing the alignment region, forming a first color photoresist layer on the substrate to cover the outer black matrix and the dummy black matrix, forming a first color pattern in the panel region and an alignment pattern in the alignment region by patterning the first color photoresist layer, forming a second color photoresist layer on the substrate, forming a second color pattern in the panel region by patterning the second color photoresist layer, and forming a third color pattern in the panel region. | 05-15-2014 |
20140134771 | Light Emitting Device and Method of Manufacturing the Same - It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter. | 05-15-2014 |
20140141553 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE CHIP - A method for manufacturing a light emitting diode chip includes following steps: providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof; forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer totally covering the protrusions; forming a plurality of semiconductor islands on an upper surface of the un-doped GaN layer by self-organized growth, gaps being formed between two adjacent semiconductor islands to expose a part of the upper surface of the un-doped GaN layer; forming an n-type GaN layer on the exposed part of the upper surface of the un-doped GaN layer, the n-type GaN layer being laterally grown to totally cover the semiconductor islands; forming an active layer on an upper surface of the n-type GaN layer; and forming a p-type GaN layer on the active layer. | 05-22-2014 |
20140141554 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a first substrate including a protrusion electrode pattern, a second substrate disposed opposite to the first substrate, and a liquid crystal layer disposed between the first substrate and the second substrate. The protrusion electrode pattern is made of a conductive polymer material, and a state of the liquid crystal layer changes from an isotropic state to an anisotropic state when an electric field is applied. | 05-22-2014 |
20140141555 | NANOWIRE LED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices. | 05-22-2014 |
20140147947 | Thin Film Transistor and Method for Manufacturing a Display Panel - Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved. | 05-29-2014 |
20140147948 | THIN FILM TRANSISTOR, MANUFACTURING METHOD OF SAME, AND DISPLAY DEVICE - According to one embodiment, a thin film transistor includes: a substrate; a semiconductor layer; first and second insulating films; and gate, source and drain electrodes. The semiconductor layer is provided on the substrate. The semiconductor layer is made of an oxide having indium. The semiconductor layer has first and second regions and other region. The first insulating film covers a top face of the other region. The second insulating film covers at least a pair of side surfaces of the semiconductor layer. The second insulating film is formed under a condition different from that for the first insulating film. The gate electrode is provided on the first and second insulating films or below the semiconductor layer. The source and drain electrodes are provided on the first and second regions, respectively. The drain and source electrodes sandwich the pair of the side surfaces of the semiconductor layer. | 05-29-2014 |
20140154821 | METHOD FOR FABRICATING VERTICAL LIGHT EMITTING DIODE (VLED) STRUCTURE USING A LASER PULSE TO REMOVE A CARRIER SUBSTRATE - A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer. | 06-05-2014 |
20140162386 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface. | 06-12-2014 |
20140162387 | METHOD FOR PRODUCING CELL FOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE - Provided is a method whereby a cell for a light-emitting device less variable in the thickness of the internal space can be suitably produced with high production efficiency. A glass-made fused part forming element ( | 06-12-2014 |
20140179042 | LIGHT-EMITTING DIODE MANUFACTURING METHOD - A light-emitting diode manufacturing method comprises steps of: providing a flexible material layer having a flexible reflective layer and phosphor glue in the flexible reflective layer; providing a hard material layer having a substrate and an LED chip on the substrate; combining the flexible material layer and the hard material layer together wherein the LED chip inserts into the phosphor glue and is surrounded by the flexible reflective layer; and solidifying the flexible reflective layer and the phosphor glue to form a reflective cup and a phosphor layer, respectively. | 06-26-2014 |
20140186981 | LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - A fabrication method of a light-emitting diode including forming an epitaxial layer on a first substrate; forming a metal pad and a stress release ring on the epitaxial layer, wherein the stress release ring surrounds the metal pad; performing a substrate replacement process to transfer the epitaxial layer, the metal pad, and the stress release ring onto a second substrate, wherein the metal pad and the stress release ring are disposed between the epitaxial layer and the second substrate; patterning the epitaxial layer to expose a portion of the stress release ring; and removing the stress release ring to suspend a portion of the epitaxial layer. Moreover, a light emitting diode is provided. | 07-03-2014 |
20140193932 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation. | 07-10-2014 |
20140199797 | ORGANIC LIGHT-EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the organic light-emitting display includes: i) a pixel electrode disposed on a substrate, ii) an opposite electrode disposed opposite to the pixel electrode, iii) an organic emission layer disposed between the pixel electrode and the opposite electrode; a light-scattering portion disposed between the substrate and the organic emission layer, including a plurality of scattering patterns for scattering light emitted from the organic emission layer in insulating layers having different refractive indexes. The display may further include a plurality of light absorption portions disposed between the light-scattering portion and the organic emission layer to correspond to the scattering patterns. | 07-17-2014 |
20140206116 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures. | 07-24-2014 |
20140206117 | METHOD FOR MANUFACTURING DISPLAY DEVICE - An IZO layer ( | 07-24-2014 |
20140235000 | METHOD OF GRINDING SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME - A method of grinding a substrate is provided. A substrate including a first main surface having a semiconductor layer formed thereon and a second main surface opposed to the first main surface is prepared. A support film is attached to the first main surface using a glue. The second main surface of the substrate is ground so as to reduce a thickness of the substrate. The support film is removed from the first main surface by applying force to the support film in a non-traverse direction. | 08-21-2014 |
20140235001 | Reflective Layer for Light-Emitting Diodes - A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs. | 08-21-2014 |
20140235002 | SURFACE TREATMENT OF A SEMICONDUCTOR LIGHT EMITTING DEVICE - A method according to embodiments of the invention includes roughening (FIG. | 08-21-2014 |
20140248728 | OPTOELECTRONIC DEVICE WITH LIGHT DIRECTING ARRANGEMENT AND METHOD OF FORMING THE ARRANGEMENT - An optoelectronic device comprises a body of an indirect bandgap semiconductor material having a surface and a photon active region on one side of the surface. A light directing arrangement is formed integrally with the body on an opposite side of the surface. | 09-04-2014 |
20140256073 | Simultaneous Modulation of Quantum Dot Photoluminescence using Orthogonal Fluorescence Resonance Energy Transfer (FRET) and Charge Transfer Quenching (CTQ) - Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance energy transfer (FRET), so that the modified quantum dots have a plurality of photophysical properties. The FRET and charge transfer pathways operate independently, providing for two channels of control for varying luminescence of quantum dots having the same innate properties. | 09-11-2014 |
20140273321 | Light-Emitting Element, Light-Emitting Module, Light-Emitting Panel, and Light-Emitting Device - A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode. | 09-18-2014 |
20140273322 | METHOD OF MAKING DIODE HAVING REFLECTIVE LAYER - A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer. | 09-18-2014 |
20140295595 | OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS - An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region. | 10-02-2014 |
20140295596 | METHOD FOR IMPROVING THE REFLECTIVITY OF ALUMINUM IN OLED STRUCTURE - The present disclosure discloses a method for improving the reflectivity of aluminum in OLED structure. The OLED structure includes a top ITO layer, a middle reflective layer made by aluminum and a bottom ITO layer. The method comprises; forming a bottom ITO layer; coating the aluminous reflective layer on the surface of the bottom ITO layer and forming an aluminum oxide layer on the surface of the aluminous reflective layer uniformly by introducing plenty of oxygen gas simultaneously; adjusting the velocity of coating the aluminous reflective until the aluminum oxide layer is formed; and forming an top ITO layer on the surface of the aluminum oxide layer. The present disclosure can repair and cover the defects on the surface of the metal aluminum film and can reduce the concavities and hillocks on the surface of the metal aluminum film. Consequently, the reflectivity of aluminum in OLED structure is improved. | 10-02-2014 |
20140295597 | FABRICATION METHOD FOR ORGANIC EL DEVICE - The fabrication method for an organic EL device according to the invention includes: forming a third insulating layer on a first insulating layer; removing the third insulating layer in a first pixel region by etching the third insulating layer; forming a second insulating layer that has different thicknesses in a first pixel and a second pixel and has a flat first surface by forming a precursor insulating layer to continuously cover a first reflection film and a second reflection film and then planarizing an upper surface of the precursor insulating layer; and forming a first pixel electrode and a second pixel electrode on the first surface of the second insulating layer. The first insulating layer is slower in the rate at which the layer is removed by etching than the third insulating layer. | 10-02-2014 |
20140322844 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - Provided is a method for manufacturing a light emitting device comprising a light emitting element and an optical part, the method comprising the steps of (i) forming a hydroxyl film on a bonding surface of each of the light emitting element and the optical part by an atomic layer deposition, and (ii) bonding the bonding surfaces of the light emitting element and the optical part with each other, each of the bonding surfaces having the hydroxyl film formed thereon, wherein a substep is repeated at least one time in the step (i), in which substep a first raw material gas and a second raw material gas are sequentially supplied onto the bonding surfaces of the light emitting element and the optical part, and wherein the bonding of the bonding surfaces in the step (ii) is performed without a heating treatment. | 10-30-2014 |
20140329347 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODES - An exemplary method for manufacturing a light emitting diode includes following steps: providing a substrate; growing an undoped GaN layer on the substrate, the undoped GaN layer comprising an upper surface away from the substrate and a lower surface contacting the substrate; etching the upper surface of the undoped GaN layer to form a plurality of cavities; growing an Distributed Bragg Reflector layer on the upper surface of the undoped GaN layer; and forming sequentially an N-type GaN layer, an active layer and a P-type GaN layer on the Distributed Bragg Reflector layer. | 11-06-2014 |
20140335637 | Method Of Fabricating Light Extraction Substrate For OLED - An organic light-emitting device (OLED) which can improve the light extraction efficiency of the OLED, a method of fabricating the same and an OLED including the same. The light extraction substrate is disposed on one surface of an OLED through which light generated from the OLED is emitted outward, and includes a base substrate and a light extraction layer formed on the base substrate. The light extraction layer has therein a plurality of pores which is formed on the base substrate such that the base substrate forms a bottom surface of the plurality of pores. | 11-13-2014 |
20140342480 | METHOD FOR MANUFACTURING LED, APPARATUS FOR MANUFACTURING LED, AND LED - Provided are a high-quality LED and LED member, and a method and a device with which it is possible to manufacture the same in large quantities and at minimal manufacturing cost. The present invention comprises a detachment/attachment unit for the LED or the LED member, a coating unit for performing automatic coating, and a drying unit. A coating is applied using the coating unit, and provisional drying is performed or hardening is accelerated using the drying device. Alternatively, coating and drying are repeated multiple times, after which drying or hardening is finally performed. | 11-20-2014 |
20140349425 | PHOTORESIST COMPOSITION, METHOD OF MANUFACTURING A POLARIZER AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME - A photoresist composition includes about 65% by weight to about 80% by weight of a mono-functional monomer, about 5% by weight to about 20% by weight of a di-functional monomer, about 1% by weight to about 10% by weight of a multi-functional monomer including three or more functional groups, about 1% by weight to about 5% by weight of a photoinitiator, and less than about 1% by weight of a surfactant, each based on a total weight of the photoresist composition. | 11-27-2014 |
20140349426 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member. | 11-27-2014 |
20140356994 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DEVICE - A method of manufacturing an organic electroluminescence device is disclosed. In one aspect, the method includes forming color patterns on a substrate, and forming a pixel defining layer between the color patterns. | 12-04-2014 |
20140356995 | METHOD FOR FABRICATING A LATERAL-EPITAXIAL-OVERGROWTH THIN-FILM LIGHT-EMITTING DIODE WITH NANOSCALE-ROUGHENED STRUCTURE - A method for fabricating a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure is provided. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure has a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure. A nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. Lateral epitaxial growth is used to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency. | 12-04-2014 |
20140363909 | METHOD OF PRODUCING AN ORGANIC LIGHT EMITTING ELEMENT - A method of producing the organic light emitting element which includes laminating a first substrate, an anode, an organic compound layer and a light reflective cathode in this order. The organic compound layer includes a light emitting layer, and the method of forming the light reflective cathode includes forming an Al thin layer having a thickness of 0.1 to 10 nm in contact with the organic compound layer and laminating a metal layer having a thickness of 70 nm to 10 μm on one side of the Al thin layer opposite the side in contact with the organic compound layer. The Al thin layer forming step is carried out in a vacuum of 1×10 | 12-11-2014 |
20140370630 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex. | 12-18-2014 |
20140377896 | METHOD OF MAKING DOUBLE-SIDED WAVELENGTH CONVERTER AND LIGHT GENERATING DEVICE USING SAME - A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched in the second photoluminescent element from a second side of the semiconductor construction. In some embodiments the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED). In some constructions a first region of the electroluminescent element is substantially covered with a first portion of a window layer of the wavelength converter while a second region of the electroluminescent device, but not the first region, is substantially covered with at least a portion of the first photoluminescent element of the wavelength converter. | 12-25-2014 |
20150011031 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE - Provided is a method of manufacturing an organic light emitting diode. The method of manufacturing an organic light emitting diode includes forming a light scattering layer on a substrate, forming a metal mask layer on the light scattering layer, forming a metal mask pattern by performing a heat treatment process on the metal mask layer, forming a nano structure by pattering the light scattering layer by using the metal mask pattern as an etching mask, and forming a planarizing layer to cover the nano structure on the substrate, wherein the heat treatment process is performed at temperature of about 80° C. to about 200° C. | 01-08-2015 |
20150017752 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY - A method of manufacturing an organic light-emitting diode (OLED) display is disclosed. In one aspect, the method includes forming a color filter on a thin film transistor substrate, forming an organic planarization layer on the color filter, and performing a vacuum heat-treatment on the color filter and organic planarization layer. The method also includes forming a first electrode on the organic planarization layer, forming an organic light-emitting layer on the first electrode, and forming a second electrode on the organic light-emitting layer. The vacuum heat-treatment is performed at a temperature in the range of about 150° C. to about 300° C. under a pressure substantially equal to or lower than about 10 | 01-15-2015 |
20150037917 | METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT - In a system light-emitting device, a nitride semiconductor layer including a light-emitting layer is stacked on an optically transmissive substrate, and a reflective electrode including an Ag layer is stacked on the semiconductor layer. As annealing, a first annealing step that is a preceding step and a second annealing step that is a succeeding step are performed. In the first annealing step, the annealing is performed using inert gas of nitrogen gas as ambient gas. In the second annealing step, the annealing is performed using gas including oxygen gas as ambient gas. The two-stages of the annealing are performed, whereby occurrence of wrinkles on the Ag layer can be reduced, and surface roughness can be reduced. | 02-05-2015 |
20150037918 | METHODS OF FABRICATING LIGHT EMITTING DIODES BY MASKING AND WET CHEMICAL ETCHING - An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed. | 02-05-2015 |
20150044795 | METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT - A method of manufacturing a light emitting element includes, sequentially, (a) forming a mask layer for selective growth; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer. | 02-12-2015 |
20150044796 | THIN LIGHT EMITTING DIODE AND FABRICATION METHOD - A method for fabrication a light emitting diode (LED) includes forming alternating material layers on an LED structure, formed on a substrate, to form a reflector on a back side opposite the substrate. A handle substrate is adhered to a stressor layer deposited on the reflector. The LED structure is separated from the substrate using a spalling process to expose a front side of the LED structure. | 02-12-2015 |
20150050762 | SEPARATION METHOD OF GaN SUBSTRATE BY WET ETCHING - Disclosed herein is a method of separating a GaN substrate by wet etching. The method employs chemical lift-off, and includes forming oxide layers separated from each other and a GaN column in each space between the oxide layers on a substrate, forming an n-GaN layer covering an upper space on the oxide layers and the n-GaN columns, sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n-GaN layer, and removing the oxide layers and wet etching the n-GaN columns to separate the substrate. The method can achieve improvement in epitaxial growth of GaN and reduction in fabrication costs through a simple process. In addition, the method can increase a luminous area and light extraction efficiency. | 02-19-2015 |
20150050763 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer. | 02-19-2015 |
20150050764 | Method for manufacturing diode - The present invention discloses a diode and a manufacturing method thereof and a display apparatus. The diode comprises a composite anode, a transparent metal oxide layer, a basic stack layer, and a composite cathode. The composite anode comprises a transparent anode layer and a first transparent metal layer. The first transparent metal layer is formed on the transparent anode layer. The transparent metal oxide layer is formed on the first transparent metal layer. The basic stack layer is formed on the transparent metal oxide layer. The composite cathode comprises two second transparent metal layers. The two second transparent metal layers are formed on the basic stack layer. Both transmittance and efficiency of the diode are significantly improved. The reliability of the diode is improved to elongate the lifetime of the diode. | 02-19-2015 |
20150064821 | METHOD FOR FABRICATING NANO-PATTERNED SUBSTRATE FOR HIGH-EFFICIENCY NITRIDE-BASED LIGHT-EMITTING DIODE - Provided is a method of manufacturing a nitride-based light emitting diode. According to the method, a substrate having a nano to micron sized pattern including a bottom section and a convex section, wherein a lower end diameter of the convex section is 0.1 to 3 times a light emitting wavelength of the light emitting diode, and a buffer layer formed on the substrate and formed as a GaN layer are manufactured. According to the method of manufacturing the nitride-based light emitting diode, light extraction is significantly improved, and the nano to micron sized pattern, economically formed. | 03-05-2015 |
20150064822 | Deep Ultraviolet Light Emitting Diode - A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. | 03-05-2015 |
20150072455 | METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE WITH WAVELENGTH CONVERSION LAYERS - A method for fabricating light emitting diode (LED) dice includes the step of providing a wavelength conversion layer on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The method also includes the step of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die. | 03-12-2015 |
20150072456 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion. | 03-12-2015 |
20150079710 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE - A method of manufacturing an organic light emitting display device includes defining pixels on a substrate, each of the pixels including a first area in which light is emitted in a first direction and a second area in which light is emitted in a second direction opposite the first direction; forming first electrodes respectively disposed in the first area of each of the pixels; forming a sacrificial layer in the first area and the second area of each pixel to cover the first electrodes; forming openings in the sacrificial layer to open a patterning area in the respective second area of each of the pixels; forming a conductive layer on the patterning areas and the sacrificial layer; removing the sacrificial layer; forming an intermediate layer including an organic emitting layer; and forming a third electrode on the intermediate layer. | 03-19-2015 |
20150087096 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method of manufacturing a semiconductor light emitting device is performed on a light emitting structure including a sequential stack of a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer are mesa-etched to expose a portion of the first conductivity-type semiconductor layer therethrough. A conductive layer is formed on the second conductivity-type semiconductor layer and the portion of the first conductivity-type semiconductor layer exposed by mesa-etching. In turn, the conductive layer is dry etched such that an upper surface of the first conductivity-type semiconductor layer is partially etched to have uneven portions formed thereon. The resulting semiconductor light emitting device has improved external light extraction efficiency while being easily manufactured. | 03-26-2015 |
20150093844 | DICING-FREE LED FABRICATION - Provided is a method of fabricating a light-emitting diode (LED) device. A wafer is provided. The wafer has a sapphire substrate and a semiconductor layer formed on the sapphire substrate. The semiconductor layer contains a plurality of un-separated LED dies. A photo-sensitive layer is formed over the semiconductor layer. A photolithography process is performed to pattern the photo-sensitive layer into a plurality of patterned portions. The patterned portions are separated by a plurality of openings that are each substantially aligned with one of the LED dies. A metal material is formed in each of the openings. The wafer is radiated in a localized manner such that only portions of the wafer that are substantially aligned with the openings are radiated. The sapphire substrate is removed along with un-radiated portions of the semiconductor layer, thereby separating the plurality of LED dies into individual LED dies. | 04-02-2015 |
20150099321 | METHOD FOR FABRICATING MICROSTRUCTURE TO GENERATE SURFACE PLASMON WAVES - A method for fabricating a microstructure to generate surface plasmon waves comprises steps of: preparing a substrate, and using a carrier material to carry a plurality of metallic nanoparticles and letting the metallic nanoparticles undertake self-assembly to form a microstructure on the substrate, wherein the metallic nanoparticles are separated from each other or partially agglomerated to allow the microstructure to be formed with a discontinuous surface. The present invention fabricates the microstructure having the discontinuous surface by a self-assembly method to generate the surface plasmon waves, thus exempts from using the expensive chemical vapor deposition (CVD) technology and is able to reduce the time and cost of fabrication. The present invention also breaks the structural limitation on generation of surface plasmon waves to enhance the effect of generating the surface plasmon waves. | 04-09-2015 |
20150104892 | MICROLENS FOR ORGANIC EL ELEMENT, ORGANIC EL ELEMENT USING THE SAME, AND MANUFACTURING METHODS THEREOF - A microlens for an organic EL element, which is used by being disposed on a light-emitting surface of the organic EL element, said microlens comprising a cured resin layer having concavities and convexities formed on a surface thereof, wherein when a Fourier-transformed image is obtained by performing two-dimensional fast Fourier transform processing on a concavity and convexity analysis image obtained by analyzing a shape of the concavities and convexities by use of an atomic force microscope, the Fourier-transformed image shows a circular or annular pattern substantially centered at an origin at which an absolute value of wavenumber is 0 μm | 04-16-2015 |
20150111330 | PATTERNING METHOD FOR OLEDS - Methods of fabricating a device having laterally patterned first and second sub-devices, such as subpixels of an OLED, are provided. Exemplary methods may include depositing via organic vapor jet printing (OVJP) a first organic layer of the first sub-device and a first organic layer of the second sub-device. The first organic layer of the first sub-device and the first organic layer of the second sub-device are both the same type of layer, but have different thicknesses. The type of layer is selected from an ETL, an HTL, an HIL, a spacer and a capping layer. | 04-23-2015 |
20150118773 | PHOSPHOR DISPERSION LIQUID, AND PRODUCTION METHOD FOR LED DEVICE USING SAME - The purpose is to provide a phosphor particle dispersion liquid in which the phosphor particles do not settle out when the phosphor dispersion liquid is left to stand. The phosphor dispersion liquid contains phosphor particles, clay mineral particles, inorganic particles, and a solvent. The phosphor dispersion liquid has viscosity η1 of 10 to 500 mPa·s at a shear rate of 1000 (1/s) at 25° C., and viscosity η2 of 1.0×10 | 04-30-2015 |
20150118774 | FABRICATION METHOD FOR ORGANIC EL DEVICE - The fabrication method for an organic EL device according to the invention includes: forming a third insulating layer on a first insulating layer; removing the third insulating layer in a first pixel region by etching the third insulating layer; forming a second insulating layer that has different thicknesses in a first pixel and a second pixel and has a flat first surface by forming a precursor insulating layer to continuously cover a first reflection film and a second reflection film and then planarizing an upper surface of the precursor insulating layer; and forming a first pixel electrode and a second pixel electrode on the first surface of the second insulating layer. The first insulating layer is slower in the rate at which the layer is removed by etching than the third insulating layer. | 04-30-2015 |
20150125979 | LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode. | 05-07-2015 |
20150132875 | MASK FOR FORMING LAYER, FORMING METHOD OF LAYER, AND MANUFACTURING METHOD OF ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY USING THE SAME - A mask for forming a layer, a method of forming a layer, and a manufacturing method of an organic light-emitting diode (OLED) display are disclosed. In one aspect, the mask includes at least one light absorption portion and at least one reflection portion that are formed in a unit region, the unit region corresponding to a region where a continuous layer is formed, wherein the light absorption portion and the reflection portion in the unit region are formed at different areas from each other. | 05-14-2015 |
20150132876 | METHOD FOR FABRICATING ORGANIC ELECTROLUMINESCENT DEVICES - A method of fabricating an organic electroluminescent device includes forming an organic electroluminescent layer emitting a light and a plurality of nano-sized embossing layers stacked to improve light extraction efficiency of the emitted light. | 05-14-2015 |
20150140706 | SCREEN PRINTING METHOD OF LED MODULE WITH PHOSPHOR - A screen printing method of LED module with phosphor includes: board preparation providing an LED module board with a substrate and a plurality of LED sources fixed on the substrate. The LED sources are flip chip structural and the metal electrodes thereof are fixed to the bonding pads of the substrate. A screen board is provided with meshes corresponding to the shiny sides of the LED sources of the substrate one by one. A projection of each mesh to the shiny side of the corresponding LED source has similar shape with the shiny side of the LED source. The top of the screen board is printed with allocated colloidal phosphor until each mesh is coated fully. The printed substrates are baked to solidify the phosphor. The periphery of the shiny side is fully coated. | 05-21-2015 |
20150140707 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode. | 05-21-2015 |
20150140708 | LIGHT EMITTING DEVICE WITH LIGHT PATH CHANGING STRUCTURE - The inventive concept provides light emitting devices and methods of manufacturing a light emitting device. The light emitting device may include a transparent substrate including a first region and a second region, a first transparent electrode disposed on a first surface of the transparent substrate, a second transparent electrode facing and spaced apart from the first transparent electrode, an organic light emitting layer disposed between the first and second transparent electrodes, an assistant electrode disposed between the first and second transparent electrodes and selectively masking the second region, and a light path changing structure disposed on a second surface of the transparent substrate and selectively masking the second region. | 05-21-2015 |
20150147835 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved. | 05-28-2015 |
20150295137 | METHOD FOR PRODUCING A CONNECTION REGION OF AN OPTOELECTRONIC SEMICONDUCTOR CHIP - The invention relates to a method for producing a connection region ( | 10-15-2015 |
20150311390 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip. | 10-29-2015 |
20150318440 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNS - A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode. | 11-05-2015 |
20150325753 | METHOD FOR MANUFACTURING LED DIE - A method for manufacturing an LED die includes following steps: a semi-finished LED die is provided; an N-type layer, an active layer, and an P-type layer are sequentially formed on the transparent substrate; the transparent substrate is etched by laser to form a light outputting surface, the light outputting surface having a smoothly concave and arc-shaped configuration; common parts of the active layer and the P-type layer are removed to expose a part of the N-type layer; and an electrode structure is disposed on exposed N-type layer and the p-type layer to complete the formation of the LED die. | 11-12-2015 |
20150333225 | NANOSTRUCTURED LED ARRAY WITH COLLIMATING REFLECTORS - The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructure LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs. | 11-19-2015 |
20150340547 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device has: forming a first phosphor layer including a first phosphor that is based on KSF or quantum dots on a light emitting element by a method other than spraying, and forming a second phosphor layer including a second phosphor that is different from the first phosphor on the first phosphor layer by spraying. | 11-26-2015 |
20150357520 | NANOWIRE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices. | 12-10-2015 |
20150357795 | METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT - A method of manufacturing a light emitting element includes, sequentially, (a) forming a mask layer for selective growth; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer. | 12-10-2015 |
20150362635 | METHOD OF MANUFACTURING MEMBER HAVING RELIEF STRUCTURE, AND MEMBER HAVING RELIEF STRUCTURE MANUFACTURED THEREBY - A method for producing a member having a concave-convex structure includes: preparing a stamp for micro contact printing; preparing a concave-convex forming material; coating convexities of the stamp for micro contact printing with the concave-convex forming material; transferring the concave-convex forming material, which has been applied on the stamp for micro contact printing, onto a substrate; preparing a concave-convex coating material; coating the substrate with the concave-convex coating material; and curing the concave-convex forming material and the concave-convex coating material. The member having the concave-convex structure can be produced easily and efficiently. | 12-17-2015 |
20150364643 | METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT - A method of producing light emitting elements includes providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth substrate, a lower side of the wafer being a growth substrate side, and an upper side of the wafer being a semiconductor structure side as an upper side; forming a separation groove in the wafer from the upper side of the wafer to demarcate portions of the semiconductor structure, the separation groove extending in a depth direction to a location in the wafer; forming a p-electrode and an n-electrode on an upper side of each of the demarcated portions of the semiconductor structure; forming a dielectric multilayer film at an upper side of the wafer, including portions defining the separation groove, by using an atomic layer deposition method; and separating the wafer into a plurality of light emitting elements by removing a portion of the wafer from a lower side of the wafer to at least the location to which the separation groove extends. | 12-17-2015 |
20150364657 | METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE - A method of manufacturing a light-emitting device includes providing an LED chip mounted on a base substrate, and dripping a droplet of a phosphor-containing resin to cover the LED chip. The droplet is dot-printed on the base substrate and/or the LED chip by inkjet printing. | 12-17-2015 |
20150380650 | DONOR MASK AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A method of manufacturing an organic light-emitting display apparatus including preparing a mother substrate that includes a plurality of display areas; forming a plurality of pixel electrodes on each of the display areas of the mother substrate; preparing a donor mask that includes a base substrate having a plurality of display transferring areas corresponding to the plurality of display areas, the base substrate including a groove between the display transferring areas, a light-to-heat conversion layer on the base substrate, and a reflective layer between the base substrate and the light-to-heat conversion layer and being patterned to include through holes in each of the display transferring areas; depositing a transferring layer on the light-to-heat conversion layer of the donor mask; aligning the mother substrate and the donor mask; and transferring portions of the transferring layer that overlie the through holes onto the pixel electrodes on the mother substrate. | 12-31-2015 |
20160006217 | OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS - An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region. | 01-07-2016 |
20160011457 | FABRICATION METHOD OF SUBSTRATE | 01-14-2016 |
20160013358 | METHOD FOR MANUFACTURING LIGHT EMITTING UNIT | 01-14-2016 |
20160013412 | PATTERNING METHOD FOR OLEDS | 01-14-2016 |
20160016192 | APPARATUS FOR MANUFACTURING WAVELENGTH CONVERSION PART AND METHOD OF MANUFACTURING WAVELENGTH CONVERSION PART USING THE SAME - An apparatus for manufacturing a wavelength conversion part and a method for manufacturing a wavelength conversion part using the same are provided. According to an exemplary embodiment of the disclosed technology, an apparatus for manufacturing a wavelength conversion part of a light emitting apparatus is provided to include: a dispenser including a first storing part configured to store materials including a resin and phosphors; and a first temperature adjusting part connected to the dispenser, wherein the first temperature adjusting part includes a temperature sensor. | 01-21-2016 |
20160020356 | VERTICAL SOLID-STATE TRANSDUCERS AND HIGH VOLTAGE SOLID-STATE TRANSDUCERS HAVING BURIED CONTACTS AND ASSOCIATED SYSTEMS AND METHODS - Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials. | 01-21-2016 |
20160020363 | METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT - A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer. | 01-21-2016 |
20160027957 | LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING - Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. | 01-28-2016 |
20160032147 | HIGH GAIN DURABLE ANTI-REFLECTIVE COATING - Disclosed herein are polysilsesquioxane-based anti-reflective coating (ARC) compositions, methods of preparation, and methods of deposition on a substrate. In one embodiment, the polysilsesquioxane of this disclosure is prepared in a two-step process of acid catalyzed hydrolysis of organoalkoxysilane followed by addition of tetralkoxysilane that generates silicone polymers with >40 mol % silanol based on Si-NMR. These high silanol siloxane polymers are stable and have a long shelf-life in polar organic solvents at room temperature. Also disclosed are low refractive index ARC made from these compositions with and without additives such as porogens, templates, thermal radical initiator, photo radical initiators, crosslinkers, Si—OH condensation catalyst and nano-fillers. Also disclosed are methods and apparatus for applying coatings to flat substrates including substrate pre-treatment processes, coating processes and coating curing processes including skin-curing using hot-air knives. Also disclosed are coating compositions and formulations for highly tunable, durable, highly abrasion-resistant functionalized anti-reflective coatings. | 02-04-2016 |
20160035932 | NANO-STRUCTURED LIGHT-EMITTING DEVICE AND METHODS FOR MANUFACTURING THE SAME - A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer. | 02-04-2016 |
20160035940 | LIGHT EMITTING APPARATUS, MANUFACTURING METHOD OF LIGHT EMITTING APPARATUS, LIGHT RECEIVING AND EMITTING APPARATUS, AND ELECTRONIC EQUIPMENT - A manufacturing method is a method for manufacturing a light emitting apparatus including a translucent substrate, and a light emitting section and an optical filer section that are arranged in a first region of the substrate when viewed in a normal direction of a first surface of the substrate. The manufacturing method includes: forming a dielectric multilayer film over the first region of the substrate; forming a first electrode on the dielectric multilayer film included in the light emitting section; forming a functional layer with a light emitting layer over the first electrode and the dielectric multilayer film included in the optical filter section; and forming a second electrode having semi-transmissive reflectivity on the functional layer over the first region of the substrate. | 02-04-2016 |
20160043271 | Method for Producing an Assembly Emitting Electromagnetic Radiation, and Assembly Emitting Electromagnetic Radiation - In various exemplary embodiments, a method is provided for producing an assembly emitting electromagnetic radiation. In this case, a component composite structure is provided which has components emitting electromagnetic radiation, which components are coupled to one another physically in the component composite structure. In each case at least one component-individual property is imparted to the components. Depending on the determined properties of the components, a structure mask for covering the components in the component composite structure is formed, wherein the structure mask has structure mask cutouts corresponding to the components, which structure mask cutouts are formed in component-individual fashion depending on the properties of the corresponding components. The structure mask cutouts provide phosphor regions, which are exposed in the structure mask cutouts, on the components. Phosphor layers are formed on the phosphor regions of the components. | 02-11-2016 |
20160043281 | METHOD OF FABRICATING A LIGHT EMITTING DIODE DEVICE - The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well. | 02-11-2016 |
20160049457 | METHOD OF MANUFACTURING DISPLAY APPARATUS - A display apparatus includes a plurality of pixels, a signal transmission line, a pad and a buffer. The pixels display an image. The signal transmission line is electrically connected to at least one of the pixels to transmit a signal. The pad is electrically connected to the signal transmission line. The pad has greater width than the signal transmission line. The buffer is disposed between the signal transmission line and the pad. A first end of the buffer adjacent to the pad is wider than a second end of the buffer adjacent to the signal transmission line. | 02-18-2016 |
20160056346 | METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT - A method of producing an optoelectronic component includes providing a substrate with an optoelectronic semiconductor chip arranged on a surface of the substrate; providing a mask having a lower layer and an upper layer, wherein the lower layer has a lower opening and the upper layer has an upper opening, which openings jointly form a continuous mask opening, and the lower opening has a larger area than the upper opening; arranging the mask above the surface of the substrate such that the lower layer faces the surface of the substrate and the mask opening is arranged above the optoelectronic semiconductor chip; spraying a layer onto the optoelectronic semiconductor chip through the mask opening; and removing the mask. | 02-25-2016 |
20160064900 | SURFACE-EMITTING SEMICONDUCTOR LASER, METHOD FOR PRODUCING THE SAME, SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING DEVICE - A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer. | 03-03-2016 |
20160072006 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING GaAs SUBSTRATE - A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 μm. | 03-10-2016 |
20160079468 | METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS - The method is designed for producing optoelectronic semiconductor chips and comprises the steps:
| 03-17-2016 |
20160079570 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - Disclosed are an organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display capable of minimizing resistance increase of a second electrode and improving light extraction efficiency at the same time by forming a separate reflector, and a manufacturing method thereof. | 03-17-2016 |
20160087158 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients. | 03-24-2016 |
20160087174 | Light emitting device with an optical element and a reflector - A structure according to embodiments of the invention includes a semiconductor light emitting device and an optical element disposed over the semiconductor light emitting device. The semiconductor light emitting device is disposed in a recess in the optical element. A reflector is disposed on a bottom surface of the optical element. A method according to embodiments of the invention includes disposing a semiconductor light emitting device on a substrate and forming a reflector adjacent the semiconductor light emitting device. An optical element is formed over the semiconductor light emitting device. The semiconductor light emitting device is removed from the substrate. | 03-24-2016 |
20160093835 | Semiconductor Device and Method of Manufacturing Same - A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction. | 03-31-2016 |
20160099377 | LIGHT-EMITTING ELEMENT - A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element | 04-07-2016 |
20160111592 | LIGHT EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME - Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR and regions between patterns of the DBR. | 04-21-2016 |
20160118544 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FORMING ELECTRODE - A semiconductor light-emitting device having an electrode that can be manufactured by a simple method and is unlikely to deteriorate, and a method for forming the electrode are provided. The semiconductor light-emitting device according to the present invention has a semiconductor layered structure having a light-emitting layer that emits light by supplying electric power and an electrode formed on the semiconductor layered structure. The electrode has a reflection layer that reflects light exiting from the light-emitting layer, a barrier layer formed on the upper side and side surface of the reflection layer, and a pad layer formed only on the top surface of the barrier layer. | 04-28-2016 |
20160118546 | LIGHT EMITTING DEVICE WITH ANTI-TOTAL-INTERNAL-REFLECTION CAPABILITY - A light emitting device includes: a light emitting layered structure; an electrode unit connected to the light emitting layered structure and including a transparent electrode layer of a primary metal oxide which is stacked on the light emitting layered structure along a stacking direction; and a total-internal-reflection suppression material dispersed in the transparent electrode layer and containing a secondary metal oxide that is different from the primary metal oxide. The secondary metal oxide has a concentration gradient within the transparent electrode layer along the stacking direction. The light output power of the light emitting device may be increased by about 44% as compared to a conventional light emitting device. | 04-28-2016 |
20160126418 | SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING A PHOTONIC CRYSTAL PATTERN FORMED THEREON, AND METHOD FOR MANUFACTURING SAME - The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes. | 05-05-2016 |
20160141461 | LED LIGHTING ARRANGEMENT INCLUDING LIGHT EMITTING PHOSPHOR - A method of manufacturing an LED lighting arrangement, comprises: receiving an optical component having a diffusing material that is light diffusive and at least one photoluminescent material that is excitable by light of a first wavelength range and which emits light of a second wavelength range; receiving an LED assembly that is operable to generate the light of the first wavelength range and mounting the optical component to the LED assembly to form the LED lighting arrangement. The optical component having the diffusing and photoluminescent materials is mass produced separately from the LED assembly and can be selected such that light generated by the optical component combined with the light generated by the LED assembly corresponds to light of a selected color. Also disclosed are LED lighting arrangements, components for LED lighting arrangements and methods of fabricating an optical component. | 05-19-2016 |
20160149072 | METHOD FOR MAKING LIGHT-EMITTING DEVICE - A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength. | 05-26-2016 |
20160155890 | WAVELENGTH CONVERTING MATERIAL DEPOSITION METHODS AND ASSOCIATED ARTICLES | 06-02-2016 |
20160163932 | METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT - A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a mask layer arranged on an upper side of the optoelectronic semiconductor chip; providing a carrier having walls arranged on a surface of the carrier, the walls laterally limiting a receiving region; arranging an optoelectronic semiconductor chip in the receiving region, wherein a bottom side of the optoelectronic semiconductor chip faces the surface of the carrier; filling a region of the receiving region surrounding the optoelectronic semiconductor chip with an optically reflective material up to a height that lies between the upper side of the optoelectronic semiconductor chip and an upper side of the mask layer; removing the mask layer to create a free space in the optically reflective material; and introducing a wavelength-converting material into the free space. | 06-09-2016 |
20160164045 | LIGHT EXTRACTION SUBSTRATE FOR ORGANIC LIGHT EMITTING DEVICE, FABRICATION METHOD THEREFOR AND ORGANIC LIGHT EMITTING DEVICE INCLUDING SAME - The present invention relates to a light extraction substrate for an organic light emitting device, a fabrication method therefor and an organic light emitting device including the same and, more specifically, to a light extraction substrate for an organic light emitting device, a fabrication method therefor and an organic light emitting device including the same, wherein the light extraction substrate has aperiodic photonic crystal patterns formed on the front side thereof, through which light emitted from an organic light emitting element is emitted to the outside, thereby avoiding the dependency of light extraction on a specific wavelength band which occurs in existing periodic photonic crystal patterns, and inducing light extraction from a wider wavelength band. To this end, the present invention provides the light extraction substrate for the organic light emitting device, the fabrication method therefor and the organic light emitting device including the same, wherein the light extraction substrate, which is arranged on one surface through which the light emitted from the organic light emitting element is emitted to the outside, comprises: a base substrate; a matrix layer formed between the organic light emitting element and the base substrate; and the photonic crystal patterns formed on the base substrate, arranged inside the matrix layer and formed to have an aperiodic structure, wherein the matrix layer and the photonic crystal patterns form an internal light extraction layer of the organic light emitting device. | 06-09-2016 |
20160181489 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE | 06-23-2016 |
20160204309 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME | 07-14-2016 |
20160204310 | LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF | 07-14-2016 |
20160254499 | METHODS FOR CUSTOM-FITTING A RADIANT ENERGY TRANSFER PANEL | 09-01-2016 |
20160380011 | METHOD OF FABRICATING DISPLAY DEVICE - A method of fabricating a display device includes forming a thin-film transistor including a gate electrode, a source electrode and a drain electrode on a substrate, forming a first insulating layer and a second insulating layer on the thin-film transistor, forming a common electrode on the second insulating layer by depositing a common electrode material on the second insulating layer, plasma-treating a photoresist pattern on the common electrode material, and etching the common electrode material using the plasma-treated photoresist pattern as a mask, defining a contact hole in the second insulating layer which corresponds to the drain electrode using the plasma-treated photoresist pattern and the common electrode as a mask, forming a third insulating layer on the second insulating layer and the common electrode to expose the contact hole and the drain electrode and forming a pixel electrode connected to the drain electrode on the third insulating layer. | 12-29-2016 |
20170236876 | MANUFACTURING METHOD OF ORGANIC LIGHT EMITTING DEVICE, ORGANIC LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS | 08-17-2017 |
20170236978 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF | 08-17-2017 |
20170236981 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME | 08-17-2017 |