Class / Patent application number | Description | Number of patent applications / Date published |
430401000 | POST IMAGING PROCESSING | 51 |
20080206689 | Method of Forming Flexible Electronic Circuits - A multiple layer photosensitive silver halide element having at least one sensitised photosensitive layer on each side of a support, such as a transparent flexible support, is imagewise exposed according to a desired circuit pattern and developed to form a layer of conductive track patterns from each photosensitive layer. The resulting multiple layer conductive element has application in the field of printed circuit board manufacture or as the backplane electronic element of a flexible display device. | 08-28-2008 |
20100316961 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS - A substrate treatment apparatus which uniformly forms a fine resist pattern with a desired dimension within a plane of a substrate is disclosed. In a solvent vapor supply unit, a solvent vapor discharge nozzle is provided which can discharge a solvent vapor for swelling a resist pattern while moving above the front surface of a wafer. The wafer for which developing treatment has been finished and on which a resist pattern has been formed is carried into the solvent vapor supply unit, and the solvent vapor discharge nozzle is moved above the front surface of the wafer, so that the solvent vapor discharge nozzle supplies the solvent vapor onto the front surface of the wafer. This uniformly supplies a predetermined amount of solvent vapor to the resist pattern on the front surface of the wafer. As a result, the solvent vapor causes the resist pattern to evenly swell by a predetermined dimension, so that a resist pattern with a desired dimension is finally uniformly formed within the plane of the wafer. | 12-16-2010 |
20110020757 | METHOD OF PREPARING LITHOGRAPHIC PRINTING PLATE - To provide a method of preparing a lithographic printing plate which is safe, exhibits excellent developing property and processing ability, and enables processing with one solution by processing after image exposure, a negative lithographic printing plate precursor having an image-recording layer containing (i) a sensitizing dye, (ii) a photopolymerization initiator, (iii) an addition polymerizable compound having an ethylenically unsaturated double bond, and (iv) a binder polymer on a hydrophilic support with an aqueous solution containing a carbonate ion, a hydrogen carbonate ion and a water-soluble polymer compound. | 01-27-2011 |
20120189964 | METHOD OF CONTROLLING THE STATES AND VORTEX CHIRALITY IN HEXAGONAL RING STRUCTURES COMPRISING NANOSCALE MAGNETIC ELEMENTS - A method is provided for achieving specific magnetic states with a given vortex chirality in artificial kagome spin ice building block structures containing one or more hexagonal rings of ferromagnetic islands created with electron beam lithography, where a subgroup of the ferromagnetic islands have a smaller width and therefore higher switching field than the other normal (wider) islands and are placed at specific positions in each of the rings. The positioning of the islands determines the magnetic state of the building block structure during magnetization reversal, and determines the chirality of the magnetic vortices that occur in each ring. | 07-26-2012 |
430403000 | With structural limitation | 1 |
20140162194 | CONFORMAL SACRIFICIAL FILM BY LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION TECHNIQUE - Methods and apparatus for forming a sacrificial during a novel process sequence of lithography and photoresist patterning are provided. In one embodiment, a method of processing a substrate having a resist material and an anti-reflective coating material thereon includes depositing an organic polymer layer over the surface of the substrate inside a process chamber using a CVD technique. The CVD technique includes flowing a monomer into a processing region of the process chamber, flowing an initiator into the processing region through one or more filament wires heated to a temperature between about 200° C. and about 450° C., and forming the organic polymer layer. In addition, the organic polymer layer is ashable and can be removed from the surface of the substrate when the resist material is removed from the surface of the substrate. | 06-12-2014 |
430405000 | Containing developer in element | 3 |
20120064464 | RADIOGRAPHIC SILVER HALIDE FILMS HAVING INCORPORATED DEVELOPER - Radiographic silver halide materials coated onto a support contain a portion of the developer chemistry incorporated within the radiographic film. The remainder of the developer chemistry is contained in a developer solution. Use of a reflective support permits the developed materials to be viewed without a light box. | 03-15-2012 |
20120122038 | DEVELOPING APPARATUS - A method for developing a substrate includes spinning the substrate with a spin holder and discharging a developer to the substrate from a plurality of exhaust ports arranged in a row on a developer feeder. The method also includes causing a moving mechanism to move said developer feeder in one direction extending to a center of the substrate in plan view while maintaining a direction of arrangement of said exhaust ports in said one direction, thereby to move said developer feeder between substantially the center and an edge of the substrate. The method further includes causing the developer discharged from said exhaust ports to impinge in separate streams on the substrate, and causing each of the separate streams to impinge spirally on the substrate, thereby to develop the substrate. At least two of loci of positions of impingement of the developer corresponding to said exhaust ports overlap each other. | 05-17-2012 |
20150104747 | DEVELOPING APPARATUS - A method for developing a substrate includes spinning the substrate with a spin holder and discharging a developer to the substrate from a plurality of exhaust ports arranged in a row on a developer feeder. The method also includes causing a moving mechanism to move said developer feeder in one direction extending to a center of the substrate in plan view while maintaining a direction of arrangement of said exhaust ports in said one direction, thereby to move said developer feeder between substantially the center and an edge of the substrate. The method further includes causing the developer discharged from said exhaust ports to impinge in separate streams on the substrate, and causing each of the separate streams to impinge spirally on the substrate, thereby to develop the substrate. At least two of loci of positions of impingement of the developer corresponding to said exhaust ports overlap each other. | 04-16-2015 |
430422000 | Treating with processing composition prior to imaging and then developing | 1 |
20100081097 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block and an interface block. These blocks are arranged in the substrate processing apparatus in the above order. An exposure device is arranged adjacent to the interface block of the substrate processing apparatus. A hydrophobic processing unit is arranged in the resist cover film processing block and applies hydrophobic processing to the substrate before exposure processing. | 04-01-2010 |
430423000 | Treating with processing composition after imaging prior to developing | 4 |
20100291491 | Resist pattern slimming treatment method - A resist pattern slimming treatment method of performing a slimming treatment on a resist pattern formed on a substrate includes: a slimming treatment step of performing a slimming treatment on the resist pattern by applying a reactant solubilizing the resist pattern onto the resist pattern, then performing a heat treatment on the resist pattern under a heat treatment condition determined in advance, and then performing a developing treatment on the resist pattern; and a first line width measurement step of measuring a line width of the resist pattern before the slimming treatment step. The heat treatment condition is determined based on a measurement value of the line width measured in the first line width measurement step. | 11-18-2010 |
20100330508 | DEVELOPING APPARATUS AND DEVELOPING METHOD - A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved. | 12-30-2010 |
20120100488 | RESIST PATTERN IMPROVING MATERIAL, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - To provide a resist matter improving material containing C4-11 linear alkanediol, and water. | 04-26-2012 |
20130309615 | PROCESS SEQUENCE FOR REDUCING PATTERN ROUGHNESS AND DEFORMITY - A method for patterning a substrate with reduced defectivity is described. Once a pattern is formed in a layer of radiation-sensitive material using lithographic techniques, the pattern formed on the substrate is post-treated. The post-treating of the pattern in the layer of radiation-sensitive material is performed to reduce a roughness of the pattern. The post-treating includes performing a treatment process on the pattern to alter a solubility of an exposed surface of the pattern, wherein the treatment process involves performing a first chemical treatment of the pattern using a liquid-phase chemical solution containing a first surfactant, or exposing said pattern to second EM radiation different than said first EM radiation. Following the treatment process, the post-treating includes hard baking the pattern, and performing a second chemical treatment of the pattern using a vapor-phase chemical solution to reduce the roughness. | 11-21-2013 |
430427000 | Treating with process composition between standard develop and fix-wash | 1 |
20090047609 | METAL CONSERVATION WITH STRIPPER SOLUTIONS CONTAINING RESORCINOL - Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. | 02-19-2009 |
430432000 | Including post developing step | 13 |
20090042150 | Transparent electrically conductive film and process for producing the same - This invention provides a transparent electrically conductive film, which, while maintaining the light transparency of a transparent film, has excellent electrical conductivity, can be utilized for electromagnetic wave shielding, and does not cause inclusion of air bubbles in the lamination onto other base material, and a process for producing the same. The production process comprises the steps of forming a large number of concaves and convexes having an average height of not more than 0.1 μm on both sides or one side of a transparent film, forming a resist layer having a pattern shape opposite to the electrically conductive part in the electrically conductive film on the transparent film on its concave-convex side, applying a catalyst for plating onto the resist layer-formed face, separating the resist layer, forming a metal layer by plating, and blackening the metal layer, the metal layer satisfying 1≦W/T≦500 wherein W represents the width of the metal layer and T represents the height of the metal layer. | 02-12-2009 |
20090061364 | Process for on-press developable lithographic printing plate involving preheat - A method of processing an on-press developable lithographic printing plate with ink and/or fountain solution is described. The plate comprises on a substrate a photosensitive layer which is either capable of hardening (negative-working) or solubilization (positive-working) upon exposure to a laser, the non-hardened or solubilized areas of the photosensitive layer being soluble or dispersible in ink and/or fountain solution. The plate is exposed with a laser, heated to an elevated temperature, and then developed with ink and/or fountain solution on a lithographic press. The laser exposed plate is preferably heated by passing through a heating device or while mounted on a lithographic press before on-press development. | 03-05-2009 |
20090117500 | PHOTORESIST STRIP WITH OZONATED ACETIC ACID SOLUTION - A solution, apparatus, and method for stripping photoresist from a workpiece are disclosed. Embodiments of the invention describe a solution comprising diluted liquid acetic acid and dissolved gaseous ozone. In an embodiment an ozonated liquid acetic acid solution is prepared by dissolving ozone in liquid DI water and then mixing with liquid acetic acid. In another embodiment an ozonated liquid acetic acid solution is prepared by mixing liquid DI water and liquid acetic acid and then dissolving ozone. The ozonated liquid acetic acid solution is used to strip a layer of photoresist from a workpiece with improved performance. | 05-07-2009 |
20100047725 | DEVELOPING METHOD AND DEVELOPING UNIT - In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances. | 02-25-2010 |
20100068663 | Method for Contaminant Removal - Method for removing contaminants from a surface during semiconductor fabrication. A preferred embodiment comprises developing a resist layer on a top surface of a semiconductor substrate, curing the developed resist layer, and cleaning the developed resist layer with a developer solution to remove contaminants. The cleaning makes use of the same developer solution used to develop the resist layer, so the cleaning makes use of a process that already exists and requires no additional investment to implement, while the curing stabilizes the developed resist layer so that the cleaning does not damage the developed resist layer. | 03-18-2010 |
20100104988 | SUBSTRATE TREATING METHOD, SUBSTRATE-PROCESSING APPARATUS, DEVELOPING METHOD, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND METHOD OF CLEANING A DEVELOPING SOLUTION NOZZLE - There is disclosed a developing method of developing a photo-sensitive resist film in which a desired pattern is exposed, including subjecting the exposed photosensitive resist film to a first developing treatment; supplying a cleaning solution having an oxidizing property or alkalinity with respect to the surface of the resist film to the photosensitive resist film subject to the first developing treatment to perform a first cleaning treatment; subjecting the photosensitive resist film subjected to the first cleaning treatment to a second developing treatment; and subjecting the photosensitive resist film subjected to the second developing treatment to a second cleaning treatment. | 04-29-2010 |
20100304313 | Process Solutions Containing Surfactants - Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention. | 12-02-2010 |
20100323306 | SUBSTRATE TREATMENT SYSTEM, SUBSTRATE TREATMENT METHOD, AND COMPUTER READABLE STORAGE MEDIUM - In the present invention, a plurality of heat treatment plates are provided side by side in a linear form on a base of a heat treatment apparatus in a coating and developing treatment system. In the heat treatment apparatus, three transfer member groups are provided which transfer a substrate in zones between adjacent heat treatment plates. At the time when performing a pre-baking treatment in the heat treatment apparatus, the substrate is transferred in order to the heat treatment plates at the same temperature, whereby the heat treatment is dividedly performed on the heat treatment plates. According to the present invention, substrates are subjected to heat treatment along the same route, so that the thermal histories are made uniform among the substrates. | 12-23-2010 |
20120225389 | SUBSTRATE TREATMENT METHOD - A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting and heating the substrate on a stage in a treatment container; then supplying a solvent gas to a center portion of a front surface of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask; and while performing the process of supplying and exhausting a solvent gas, forming a temperature gradient in the substrate via the stage such that a temperature at the center portion of the substrate is higher than a temperature at a peripheral portion of the substrate. | 09-06-2012 |
20120225390 | SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT APPARATUS, AND NON-TRANSITORY COMPUTER STORAGE MEDIUM - A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting the substrate on a stage in a treatment container; and repeating a plurality of times steps of supplying a solvent gas to a center portion of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask, and then supplying a drying gas for drying the solvent supplied to the substrate to the center portion of the substrate while exhausting the drying gas from the periphery of the substrate. | 09-06-2012 |
20120322011 | METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES - The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons. | 12-20-2012 |
20140199638 | NEGATIVE DEVELOPING METHOD AND NEGATIVE DEVELOPING APPARATUS - After a developing step, a substrate is spun at high speeds without supplying a cleaning liquid to a surface of the substrate. This causes a large centrifugal force to act on a developer on a resist film. Consequently, the developer can be removed rapidly from the surface of the substrate. As a result, development can be stopped at an expected timing. Moreover, a circuit pattern having an expected dimension can be obtained. At this time, a dissolved product is also removable with the developer from the substrate. This can avoid failure in development caused by the dissolved product. Consequently, suitably maintained quality of negative development can be achieved with a reduced usage amount of the cleaning liquid. | 07-17-2014 |
20150294862 | Developing Unit With Multi-Switch Exhaust Control For Defect Reduction - The present disclosure provides a developing unit that includes a wafer stage designed to secure a semiconductor wafer; an exhaust mechanism configured around the wafer stage and designed to exhaust a fluid from the semiconductor wafer; and a multi-switch integrated with the exhaust mechanism and designed to control the exhaust mechanism at various open states. | 10-15-2015 |
430433000 | Developing in acid medium | 1 |
20090233245 | Color Film Developer Composition and Process Therefor - A method and composition for processing color film is described. The color film is processed by developing it using first and second compositions. The second composition is an aqueous composition including a buffer, an antioxidant, a preservative, a hydroxide and a developer selected from the group consisting of a hydroquinone and an ascorbic acid. | 09-17-2009 |
430434000 | Developing | 23 |
20090130614 | Development device and development method - A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved. | 05-21-2009 |
20090297992 | COLOR PHOTOGRAPHIC MATERIALS WITH YELLOW MINIMUM DENSITY COLORANTS - Silver halide color photographic elements having multiple color imaging layers contain a permanent, pre-formed yellow colorant that is present in an amount to provide a status M blue density greater than 0.003 per mg/m | 12-03-2009 |
20100068664 | DEVELOPING ROLLER, ELECTROPHOTOGRAPHIC PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC IMAGE-FORMING APPARATUS - A developing roller has a mandrel, an elastic layer and a cover layer as a surface layer. The cover layer includes a silicon oxide film containing a carbon atom chemically bonded to a silicon atom. In the silicon oxide film, the proportion of the total number of the elements of silicon, oxygen, carbon and hydrogen to the number of all detected elements, as detected with a high-frequency glow discharge light-emission surface analysis method, is 90% or more. The silicon oxide film has an abundance ratio of an oxygen atom chemically bonded to a silicon atom to silicon atoms, (O/Si), of 0.65 or more but 1.95 or less and an abundance ratio of a carbon atom chemically bonded to a silicon atom to silicon atoms, (C/Si), of 0.05 or more but 1.65 or less, and has a ratio of the maximum value to the minimum value of the (C/Si) in a thickness direction of the cover layer, of 1.50 to 33.00. | 03-18-2010 |
20100216078 | DEVELOPING METHOD - Disclosed is a developing method that develops a substrate, which has a surface coated with a resist having been exposed, while the substrate is held horizontally and is rotating about a vertical axis. The method includes supplying a developing liquid from a discharge port of a developer nozzle onto the surface of the substrate, while moving the developer nozzle, disposed above the substrate, from a central portion of the substrate toward a peripheral portion of the substrate, and supplying a first rinse liquid from a discharge port of a first rinse nozzle onto the surface of the substrate, while moving the first rinse nozzle, disposed above the substrate, from the central portion of the substrate toward the peripheral portion of the substrate. The supplying of the developing liquid and the supplying the first rinse liquid are performed concurrently, while the first rinse nozzle is maintained nearer to a center of the substrate than the developer nozzle. | 08-26-2010 |
20100239986 | SUBSTRATE PROCESSING APPARATUS - The transporting process from cleaning and drying processing of a substrate in a cleaning/drying processing unit in a cleaning/drying processing group to post-exposure bake (PEB) of the substrate in a thermal processing group for post-exposure bake in a cleaning/drying processing block is described below. First, after the substrate after exposure processing is subjected to the cleaning and drying processing in the cleaning/drying processing group, a sixth central robot takes out the substrate from the cleaning/drying processing group and carries that substrate into the thermal processing group for post-exposure bake in the cleaning/drying processing block. | 09-23-2010 |
20100323307 | DEVELOPING APPARATUS AND METHOD - A developing apparatus for developing a substrate whose surface is coated with a coating solution and then exposed includes a substrate supporting unit for horizontally supporting the substrate, a rotation driving mechanism for rotating the substrate supporting unit forwardly or backwardly with respect to a vertical axis, a developer nozzle, disposed to face a surface of the substrate supported by the substrate supporting unit, having a strip-shaped injection opening extended along a direction extending from a periphery of the substrate toward a central portion thereof, a moving unit for moving the developer nozzle from an outer portion of the substrate toward the central portion thereof, and a controller for controlling operations such that while the substrate is rotated forwardly by the rotation driving mechanism, a developer is supplied through the injection opening to the surface of the substrate by moving the developer nozzle and, then, the substrate is rotated backwardly by the rotation driving mechanism. | 12-23-2010 |
20110027727 | Substrate developing method, substrate processing method and developing solution supply nozzle - According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution. | 02-03-2011 |
20110045414 | RINSING METHOD, DEVELOPING METHOD, DEVELOPING SYSTEM AND COMPUTER-READ STORAGE MEDIUM - The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step | 02-24-2011 |
20110143290 | DEVELOPING TREATMENT METHOD AND COMPUTER-READABLE STORAGE MEDIUM - An extreme ultra violet (EUV) resist film is formed on a wafer W, and then a EUV light is radiated onto the EUV resist film formed on the wafer W so that a predetermined pattern is selectively exposed on the EUV resist film. Thereafter, a developing solution with a concentration of less than 2.38% by weight, whose temperature is adjusted to be 5° C. or higher and less than 23° C. in a supplying equipment group | 06-16-2011 |
20110200952 | DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM - There is provided a developing apparatus and a developing method capable of rapidly forming a liquid film of a developing solution on an entire surface of a substrate while reducing a usage amount of the developing solution. The developing apparatus includes an airtightly sealed processing vessel that forms a processing atmosphere therein; a temperature control plate that is provided within the processing vessel and mounts the substrate thereon; an atmosphere gas supply unit that supplies an atmosphere gas including mist and vapor of a developing solution onto a surface of the substrate within the processing vessel; and a first temperature control unit that controls the temperature control plate to a temperature allowing the atmosphere gas to be condensed on the substrate. Here, an inner wall of the processing vessel is maintained at a temperature at which the atmosphere gas is hardly condensed on the inner wall. | 08-18-2011 |
20110200953 | DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM - There is provided a developing apparatus capable of achieving high throughput. The developing apparatus includes an airtightly sealed processing vessel that forms a processing atmosphere therein; an atmosphere gas supply unit that supplies an atmosphere gas containing mist of a developing solution into the processing vessel in order to form a liquid film of the developing solution on a surface of a substrate loaded into the processing vessel; and a drying unit that dries the substrate in order to stop a developing process by the liquid film. A reaction between a resist and the developing solution can be stopped. Therefore, a developing process can be performed in parallel with a cleaning process performed by a cleaning module and high throughput is achieved. | 08-18-2011 |
20120135358 | COATING TREATMENT METHOD, COMPUTER-READABLE STORAGE MEDIUM, AND COATING TREATMENT APPARATUS - A substrate is first rotated at a first rotation speed, and a resist solution is applied. Rotation of the substrate is decelerated to a second rotation speed lower than the first rotation speed so that the substrate is rotated at the low speed to smooth the resist solution on the substrate. Rotation of the substrate is then accelerated to a third rotation speed higher than the second rotation speed, and a solvent for the coating solution and/or a dry gas are/is supplied to the resist solution on the substrate. The solvent gas is supplied to a portion of the resist solution on the substrate thicker than a set thickness, and the dry gas is supplied to a portion of the coating solution on the substrate thinner than the set thickness. This thins the thicker portion of the resist solution and thickens the thinner portion to uniform the resist solution. | 05-31-2012 |
20130108969 | METHOD AND AN APPARATUS HAVING A COMPRESSIBLE COLLAR FOR THERMALLY TREATING A PHOTOSENSITIVE PRECURSOR | 05-02-2013 |
20140377709 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device of the present invention includes steps of (a) preparing a silicon carbide substrate including a photoresist film formed on a principal surface, (b) dropping a first developing solution onto the photoresist film, (c) rotating the silicon carbide substrate to drain the first developing solution dropped onto the photoresist film after a lapse of a first development time since the end of the step (b), (d) dropping a second developing solution onto the photoresist film after the step (c), and (e) rotating the silicon carbide substrate to drain the second developing solution dropped onto the photoresist film after a lapse of a second development time since the end of the step (d). | 12-25-2014 |
20150050602 | Spin Development Method and Apparatus - An optimal development method and an apparatus of a resist formed on a half-inch size wafer. The development method is a development method of a resist formed on a wafer with a wafer size for manufacturing a number of minimized units of semiconductor devices. The method includes a first step, a second step, a third step, and a fourth step. The first step drops developer until a thickness of developer becomes maximum on the wafer whose rotation is stopped. The second step performs development while rotating the wafer. The third step supplies the developer about a half of the amount of developer of the first step on the wafer whose rotation is stopped. The fourth step performs development at a development period longer than the second step while rotating the wafer. | 02-19-2015 |
20160026087 | Developing Method, Developing Apparatus, and Computer-Readable Recording Medium - There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole. | 01-28-2016 |
20160062240 | DEVELOPING METHOD, DEVELOPING APPARATUS, AND RECORDING MEDIUM - A developing method can perform a developing process on a resist film that is exposed to light. The developing method includes forming a developing solution film by supplying a developing solution onto a surface of a substrate having thereon a resist film that is exposed to light; thinning the developing solution film by pushing out the developing solution containing components dissolved from the resist film; and supplying a new developing solution onto the thinned developing solution film. | 03-03-2016 |
20160154311 | DEVELOPING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND DEVELOPING APPARATUS | 06-02-2016 |
430435000 | Using identified developer | 5 |
20080292997 | METHOD OF DEVELOPING PHOTOSENSITIVE MATERIAL AND METHOD OF PRODUCING CONDUCTIVE LAYER-ATTACHED FILM - An in-liquid turn bar disposed in a developing tank is set to discharge developer from plural slit-shaped discharge openings of a first cylindrical member such that a discharge rate of the developer per 1 m of the photosensitive material turning member is from 50 to 200 l/min (litter/minute). Regulating plates protruding from a surface of the first cylindrical member are provided at both transverse ends of the first cylindrical member. The amount of the developer discharged from both transverse ends of a photosensitive web is controlled by the regulating plates, thereby adjusting a gap between the first cylindrical member and the photosensitive web. Accordingly, the gap between the photosensitive web and the in-liquid turn bar is substantially uniform in a transverse direction, and thus the photosensitive web is turned without contact with the in-liquid turn bar. | 11-27-2008 |
20120115090 | SUBSTRATE TREATMENT METHOD, COMPUTER STORAGE MEDIUM AND SUBSTRATE TREATMENT APPARATUS - The present disclosure is a substrate treatment method of supplying a surface treatment liquid onto a surface of a substrate having a film with high water repellency formed thereon, the method including: a liquid puddle forming step of forming a liquid puddle of the surface treatment liquid by supplying the surface treatment liquid from a nozzle to one location of a peripheral portion of the substrate; and a liquid puddle moving step of then moving the liquid puddle formed at the peripheral portion of the substrate to a central portion of the substrate by moving the nozzle from a position above the peripheral portion of the substrate to a position above the central portion of the substrate while continuing the supply of the surface treatment liquid. | 05-10-2012 |
20120183909 | DEVELOPING TREATMENT METHOD - A developing treatment method includes: a treatment solution supplying step of supplying a treatment solution made by diluting a hydrophobizing agent hydrophobizing a resist pattern with hydrofluoroether onto a substrate on which a rinse solution has been supplied after development of the resist pattern; a hydrophobic treatment stabilizing step of stabilizing a hydrophobic treatment of the resist pattern with the supply of the treatment solution stopped and rotation of the substrate almost stopped; and a treatment solution removing step of removing the treatment solution from a top of the substrate on which the treatment solution has been supplied. The hydrophobizing agent is trimethylsilyldimethyl-amine. | 07-19-2012 |
430436000 | Plural identified developers | 1 |
20130288185 | DEVELOPER COMPOSITION FOR PRINTING PLATE, DEVELOPER AND METHOD FOR MANUFACTURING PRINTING PLATE - The present invention provides a water-based developer where the dispersibility of an image mask layer in a developer is good in a developing step of a water-developable printing original plate of a CTP system. Also, the present invention also provides a water-based developer where the scum dispersibility in the developer is good even the developing is repeatedly conducted in large quantities using the same developer in a developing step of a water-developable printing original plate of a negative system. According to the present invention, there is provided a developer composition for a printing plate containing (a) alkali metal salt of saturated fatty acid having carbon number of 12 to 18 and (b) alkali metal salt of unsaturated fatty acid having carbon number of 12 to 18 in a weight ratio of from 20:80 to 80:20 in terms of (a):(b). The developer composition may further contain an alkali agent (c). In this case, a weight ratio of (a):(b) may be from 20:80 to 80:20, and the alkali agent (c) may be contained in amount of 0.01 to 10 part(s) by weight to 100 parts by weight in total of the components (a) and (b). | 10-31-2013 |
430441000 | Carbocyclic | 1 |
20100203458 | METHOD FOR DEVELOPING A PRINTING PLATE PRECURSOR - A method for developing a printing plate precursor comprising the step of immersing the precursor in an aqueous alkaline developing solution comprising a (co) polymer comprising a monomeric unit which is represented by the following formula (I): wherein L is a linking group; R | 08-12-2010 |