Class / Patent application number | Description | Number of patent applications / Date published |
427577000 | Inorganic carbon containing coating material, not as steel (e.g., carbide, etc.) | 67 |
20080260968 | METHOD OF FORMING AMORPHOUS CARBON LAYER USING CROSS TYPE HYDROCARBON COMPOUND AND METHOD OF FORMING LOW-K DIELECTRIC LAYER USING THE SAME - A method of forming an amorphous carbon layer using a cross type hydrocarbon compound as a precursor and a method of forming a low-k dielectric layer using the same are disclosed. The present invention includes a step (a) of vaporizing a precursor containing a cross type hydrocarbon compound, a step (b) of supplying the vaporized precursor and a additive gas into a reaction chamber via a shower head, wherein the precursor and the additive gas are changed into plasma state, and a step (c) of depositing the amorphous carbon layer for the hard mask or the low-k dielectric in the reaction chamber. | 10-23-2008 |
20080280067 | Method of forming a carbon film on a metal substrate at a low temperature - A method of forming a carbon film on a metal substrate at a low temperature has steps of preparing a metal substrate having a softening temperature; forming a catalytic layer having a thickness of greater than 0.01 μm on the metal substrate, and forming a carbon film on the catalytic layer by chemical vapor deposition (CVD) at a reaction temperature less than the softening temperature of the metal substrate. A carbonaceous material is carried into a CVD reaction area by a carrier gas and is thermally decomposed at a reaction temperature between 300° C. and 1000° C. to form the carbon film having a thickness between 0.1 μm and 10 μm on the catalytic layer. | 11-13-2008 |
20080305277 | METHOD AND APPARATUS FOR MAKING DIAMOND-LIKE CARBON FILMS - Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm | 12-11-2008 |
20080311313 | Film Forming Method and Film Forming Apparatus - For a substrate (W) placed in an airtight processing vessel ( | 12-18-2008 |
20080317976 | Amorphous Carbon Film Forming Method and Device - An amorphous carbon film forming apparatus according to the present invention is characterized by being provided with a film forming furnace | 12-25-2008 |
20090011148 | Methods and apparatuses promoting adhesion of dielectric barrier film to copper - Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure. | 01-08-2009 |
20090029067 | METHOD FOR PRODUCING AMORPHOUS CARBON COATINGS ON EXTERNAL SURFACES USING DIAMONDOID PRECURSORS - The invention relates to a method for forming high sp | 01-29-2009 |
20090029068 | CARBON THIN FILM MANUFACTURING METHOD AND CARBON THIN FILM COATED BODY - A carbon thin film manufacturing method includes depositing an intermediate layer on a surface of a substrate, and forming a diamond-like carbon coating on a surface of the intermediate layer. In the carbon thin film manufacturing method, a bias voltage within a range of 0 V to −30 V is applied to the substrate during the deposition of the intermediate layer. | 01-29-2009 |
20090081383 | Carbon Nanotube Infused Composites via Plasma Processing - A continuous, plasma-based process for the production of carbon-nanotube-infused fibers is disclosed. | 03-26-2009 |
20090148626 | SYSTEM, METHOD AND APPARATUS FOR FILAMENT AND SUPPORT USED IN PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION FOR REDUCING CARBON VOIDS ON MEDIA DISKS IN DISK DRIVES - A filament post used in plasma-enhanced chemical vapor deposition has an outer shell and an inner post. An electrical potential is applied only to the inner post to ensure that there is no impact on the plasma density and the carbon film properties. The inner post and the outer shell are electrically insulated by ceramic insulators, such that no electrical potential is applied to outer shell. The stress generated in the carbon film is directly related to the electrical potential of the surface to which the film is deposited. The carbon film deposited on the outer shell of the post is not highly stressed, which significantly reduces film delamination from the filament post surfaces. | 06-11-2009 |
20090162572 | Systems and Methods for the Production of Highly Tetrahedral Amorphous Carbon Coatings - The invention provides systems and methods for the deposition of an improved diamond-like carbon material, particularly for the production of magnetic recording media. The diamond-like carbon material of the present invention is highly tetrahedral, that is, it features a large number of the sp | 06-25-2009 |
20090169770 | MOISTURE BARRIER COATINGS - A barrier assembly having a flexible or rigid substrate overcoated with an all polymer multilayer stack. A multilayer on the substrate includes alternating diamond-like glass or carbon layers with polymer layers. Another multilayer includes alternating polymer layers using different types of polymers. The barrier layers can be used to mount, cover, encapsulate or form composite assemblies for protection of moisture or oxygen sensitive articles | 07-02-2009 |
20090214799 | Method and Apparatus for the Continuous Production and Functionalization of Single-Walled Carbon Nanotubes Using a High Frequency Plasma Torch - An integrated method and apparatus to continuously produce purified Single Wall Carbon Nanotubes (SWNT) from a continuous supply of solid carbon powder fed to an induction plasma torch. The apparatus includes a reactor body disposed to maintain laminar flow of gases with the torch body and coupled to a quenching body where temperature and residence time is controlled. Conveniently, functionalization may take place in the quenching body. The torch is operated with an argon carrier gas, an argon stabilizing gas and a helium sheath gas. Solid carbon reactants are preferably mixed with at least two metal catalysts containing nickel and cobalt with additional metal oxides of yttrium and cerium being desirable. | 08-27-2009 |
20090214800 | APPARATUS FOR AND METHOD OF FORMING CARBON NANOTUBE - A vacuum chamber includes a radical beam irradiation part and a nanoparticle beam irradiation part. A substrate is held by a substrate holding part. The nanoparticle beam irradiation part irradiates the substrate with a beam of metal nanoparticles serving as a catalyst to form the catalyst on the substrate. Thereafter, the radical beam irradiation part generates a plasma from a source gas to irradiate the substrate with a beam of generated neutral radical species to grow a carbon nanotube on the substrate. The provision of an aperture in the radical beam irradiation part allows a relatively high degree of vacuum of 10 | 08-27-2009 |
20090246408 | METHOD OF ALIGNING NANOTUBES - A method of aligning nanotubes is described, where a plurality of channels is provided on a substrate ( | 10-01-2009 |
20090246409 | Method and apparatus for mass-producing DLC films - A DLC film mass-producing apparatus | 10-01-2009 |
20090263592 | PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF ADVANCED LUBRICANT FOR THIN FILM STORAGE MEDIUM - A magnetic recording medium including a solid lubricant film containing a plasma-enhanced chemical vapor deposited perfluoropolyether is disclosed. Preferably, the solid lubricant is formed in the presence of oxygen and longer fluorocarbon chain to form perfluoropolyether, thereby enhancing the chain flexibility perfluoropolyether and in the presence of a hydrocarbon to stabilize the process, thereby allowing process control. | 10-22-2009 |
20090263593 | METHOD FOR MANUFACTURING CARBON FILM - The present invention provides a method for manufacturing a hard carbon film having a high sp3 bond ratio and excellent film quality. In one embodiment of the present invention, CH | 10-22-2009 |
20090286012 | Method and Apparatus for High Rate, Uniform Plasma Processing of Three-dimensional Objects - A method of performing plasma immersion ion processing (PIIP), particularly suited for processing three-dimensional objects. One or more such objects are placed in a conductive cage having solid or mesh walls. The cage completely encloses the objects. A voltage is applied to the cage, and the plasma is generated, resulting in the plasma being contained within the cage. | 11-19-2009 |
20090291234 | Method for depositing thin film for magnetic recording medium and film deposition apparatus using the same - A method for depositing a thin film for a magnetic recording medium includes the steps of placing a substrate for a recording medium having a magnetic recording layer thereon on a substrate holder rotatably arranged within a film deposition chamber; and supplying a plasma beam from a plasma beam formation portion to the film deposition chamber so as to form a thin film of ta-C on the magnetic recording layer. In supplying the plasma beam, an inclination angle formed by a normal line to a surface of the magnetic recording layer and a plane orthogonal to a direction of incidence of the plasma beam is changed from a minimum inclination angle to a maximum inclination angle according to an increase in film thickness of the ta-C thin film. | 11-26-2009 |
20090297731 | APPARATUS AND METHOD FOR IMPROVING PRODUCTION THROUGHPUT IN CVD CHAMBER - A plasma CVD apparatus for forming a film on a substrate includes: an evacuatable reaction chamber; capacitively-coupled upper and lower electrodes disposed inside the reaction chamber; and an insulator for inhibiting penetration of a magnetic field of radio frequency generated during substrate processing. The insulator is placed on the bottom surface of the reaction chamber under the lower electrode. | 12-03-2009 |
20090304951 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than | 12-10-2009 |
20090311445 | Synthesis of Carbon Nanotubes by Selectively Heating Catalyst - A catalytic chemical vapor deposition method and apparatus for synthesizing carbon nanotubes and/or carbon nanofibers (CNTs) on a substrate involves selectively heating a catalyst for CNT synthesis on or near the surface of the substrate. Selective heating of the catalyst is achieved using inductive heating from a radio frequency source. Selective heating of the catalyst prevents heating of the substrate and enables the synthesis of CNTs on temperature sensitive substrates. | 12-17-2009 |
20100098884 | BORON FILM INTERFACE ENGINEERING - Methods of depositing boron-containing liner layers on substrates involve the formation of a bilayer including an initiation layer which includes barrier material to inhibit the diffusion of boron from the bilayer into the underlying substrate. | 04-22-2010 |
20100119732 | HYDROGENATED AMORPHOUS CARBON COATING - The invention relates to a hydrogenated amorphous carbon coating characterized by a substantial absence of sp | 05-13-2010 |
20100221452 | Surface coating method for hydrophobic and superhydrophobic treatment in atmospheric pressure plasma - The present invention relates to a method of coating fluorocarbon or hydrocarbon on the surface of a workpiece using atmospheric pressure plasma. More particularly, the present invention relates to a method of coating hydrocarbon or fluorocarbon on the surface of a workpiece using plasma generated under atmospheric pressure such that the workpiece can have a hydrophobic or super-hydrophobic surface. | 09-02-2010 |
20100304047 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 12-02-2010 |
20110045207 | METHOD FOR PRODUCING CARBON NANOWALLS - To improve the crystallinity of carbon nanowalls. | 02-24-2011 |
20110045208 | DIAMOND-LIKE CARBON FILM FORMING APPARATUS AND METHOD OF FORMING DIAMOND-LIKE CARBON FILM - The present invention relates to a diamond-like carbon film forming apparatus and a method of forming a diamond-like carbon film. | 02-24-2011 |
20110081503 | Method of depositing stable and adhesive interface between fluorine-based low-k material and metal barrier layer - A method of integrating a fluorine-based dielectric with a metallization scheme is described. The method includes forming a fluorine-based dielectric layer on a substrate, forming a metal-containing layer on the substrate, and adding a buffer layer or modifying a composition of the fluorine-based dielectric layer proximate an interface between the fluorine-based dielectric layer and the metal-containing layer. | 04-07-2011 |
20110165346 | Precursors for CVD Silicon Carbo-Nitride Films - Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si | 07-07-2011 |
20110195203 | GAS BARRIER FILM MANUFACTURING METHOD - A gas barrier film of high flexibility exhibiting a good gas barrier property over a long period of time is manufactured by a method of manufacturing a gas barrier film by capacitively-coupled plasma CVD using silane gas, ammonia gas, and hydrogen gas and/or nitrogen gas as gaseous raw materials, in which a silicon nitride layer is deposited on a base film at a ratio P/Q of less than 10 [W/sccm], with Q being the silane gas flow rate and P being the plasma-generating electric power, a deposition pressure of 20 to 200 Pa, and at a base film temperature of not more than 70° C. under a bias potential of not more than −100 V applied to the base film. | 08-11-2011 |
20110229656 | IN-LIQUID PLASMA FILM-FORMING APPARATUS, ELECTRODE FOR IN-LIQUID PLASMA, AND FILM-FORMING METHOD USING IN-LIQUID PLASMA - In an in-liquid plasma film-forming apparatus having: a vessel | 09-22-2011 |
20110229657 | APPARATUS AND METHOD FOR FORMING CARBON PROTECTIVE LAYER - An apparatus and method for forming a carbon protective layer on a substrate using a plasma CVD method allows a more uniform in-plane distribution of the carbon protective layer thickness. The apparatus includes an annular anode that generates a plasma beam and a disk-shaped shield disposed between the anode and the substrate. The anode, the shield, and the substrate are concentrically arranged so that a straight line connecting the centers of the anode and the substrate is perpendicular to the deposition surface of the substrate where the carbon protective layer is to be formed. The center of the shield is also on the straight line. | 09-22-2011 |
20110274852 | METHOD FOR PRODUCING DIAMOND-LIKE CARBON FILM - Disclosed is a method which enables stable and high-speed deposition of a diamond-like carbon film by plasma CVD using a general-purpose vacuum chamber without needing significant modification of the apparatus. Specifically, the method forms a diamond-like carbon film on a substrate by plasma CVD, in which the diamond-like carbon film is formed by applying a bipolar pulsed direct-current voltage to the substrate, feeding a toluene-containing gas to the chamber, and controlling the total gas pressure in the chamber at 4 Pa or more and 7 Pa or less. | 11-10-2011 |
20110293855 | METHOD OF PRODUCING COATED MEMBER - A method of producing a coated member in which a base material surface is at least partially coated with a diamond-like carbon film, the method includes: a diamond-like carbon film deposition process in which a diamond-like carbon film is formed on a surface of the base material by generating plasma by applying voltage to the base material in a processing chamber that stores the base material, while evacuating the processing chamber and introducing feedstock gas that contains at least a carbon compound into the processing chamber; and a hydrogenation process in which the deposited diamond-like carbon film is hydrogenated using hydrogen gas by stopping the voltage application and introducing hydrogen gas inducted instead of the feedstock gas, while the evacuation is being continued. | 12-01-2011 |
20110311736 | METHOD AND APPARATUS FOR FORMING FILM - This invention adopts plasma-enhanced chemical vapor deposition using the apparatus including a chamber, a pair of rotary electrode reels including a feed-out reel and a take-up reel, a plasma source, a material gas supplier, and an exhaust unit, and includes applying a negative voltage applied to the rotary electrode reels from the plasma source while a conductive substrate is fed-out from the feed-out reel and is wound on the take-up reel so that the entire surface of the substrate portion between reels contacts the material gas, whereby plasma sheath is formed along the surface of the substrate portion between reels, and the material gas is activated in the plasma sheath and thus contacts the surface of the substrate, thus forming the film on the surface of the substrate. | 12-22-2011 |
20120045591 | PLASMA PROCESSING APPARATUS, DEPOSITION METHOD, METHOD OF MANUFACTURING METAL PLATE HAVING DLC FILM, METHOD OF MANUFACTURING SEPARATOR, AND METHOD OF MANUFACTURING ARTICLE - A plasma processing apparatus includes a holder holding an object to be processed in a vacuum chamber while being electrically connected to the object, a first take-up portion configured to take up an electrically conductive sheet and set at a potential different from that of the object at the time of plasma processing, and a second take-up portion configured to take up the electrically conductive sheet which is fed from the first take-up portion and passes through a position facing a processing surface of the object held by the holder. | 02-23-2012 |
20120045592 | Process to Deposit Diamond Like Carbon as Surface of a Shaped Object - A plasma based deposition process to deposit thin film on the inner surfaces of the shaped objects such as plastic or metallic object like bottles, hollow tubes etc. at room temperature has been developed. In present invention uniform hydrogenated amorphous carbon (also called Diamond-Like Carbon, DLC) films on inner surfaces of plastic bottles is successfully deposited. Applications of such product include entire food and drug industries. There is a huge demand of polyethylene terephthalate (PET) or polyethylene naphthalate (PEN)) bottles, meant for the storage of potable water, carbonated soft drinks, wines, medicines etc. However, the higher cost prohibits their wide, spread use. The cheaper alternative is to use plastic bottles inside coated with chemically inert material such as Diamond-Like Carbon (DLC) will be commercially viable. Inventor process can be scaled up for mass production. This process can also be used for coating on inner surface of metallic cane or tube with a carbide forming interlayer (like hydrogenated amorphous silicon) to get the DLC films with better adhesion to inner surface of metals. | 02-23-2012 |
20120082803 | PROTECTIVE FILM MAINLY COMPOSED OF A TETRAHEDRAL AMORPHOUS CARBON FILM AND A MAGNETIC RECORDING MEDIUM HAVING THE PROTECTIVE FILM - A protective film is disclosed that is mainly composed of a tetrahedral amorphous carbon (ta-C film) that is denser than a DLC film formed by a plasma CVD method and containing aggregate particles so reduced as to a necessary and sufficient level, to provide a method of manufacturing such a protective film, and to provide a magnetic recording medium comprising such a protective film. The film is mainly composed of a ta-C film formed by a filtered cathodic arc method using a cathode target of glass state carbon. A magnetic recording medium is disclosed which includes a substrate, a magnetic recording layer, and the protective film mainly composed of a ta-C film. | 04-05-2012 |
20120107525 | CO2 Recycling Method and CO2 Reduction Method and Device - Disclosed is a device which uses CO | 05-03-2012 |
20120128895 | CARBON FILM FORMING METHOD, MAGNETIC-RECORDING-MEDIUM MANUFACTURING METHOD, AND CARBON FILM FORMING APPARATUS - A carbon film forming method including a step in which, inside a film formation chamber provided with a filamentous cathode electrode, an anode electrode disposed around the perimeter of the cathode electrode, and a substrate holder disposed at a position that is separated from the cathode electrode, a disk-like substrate that has a central aperture is disposed in the substrate holder so that one surface of the substrate is opposite the cathode electrode, and a columnar member that has a diameter equal to or greater than a diameter of the central aperture and that has a height equal to or greater than the diameter is disposed with clearance from the cathode electrode and the substrate so that its central axis is coaxial with a central axis of the substrate, one of its circular surfaces is oriented toward the cathode electrode, and its other circular surface is parallel to the one surface of the substrate; and a step in which carbon film is formed on the one surface of the substrate by causing emission of carbon ions from the cathode electrode side toward the substrate side after the interior of the film formation chamber has been evacuated. | 05-24-2012 |
20120258261 | INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS - A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer. | 10-11-2012 |
20120282418 | SiCN FILM FORMATION METHOD AND APPARATUS - A method for forming an SiCN film on target substrates placed in a process field inside a process container repeats a unit cycle a plurality of times to laminate thin films respectively formed, thereby forming the SiCN film with a predetermined thickness. The unit cycle includes performing and suspending supply of a silicon source gas, a nitriding gas, and a carbon hydride gas respectively from first, second, and third gas distribution nozzles to the process field. The unit cycle does not turn any one of the gases into plasma but heats the process field to a set temperature of 300 to 700° C. with the supply of the carbon hydride gas performed for a time period in total longer than that of the supply of the silicon source gas, so as to provide the SiCN film with a carbon concentration of 15.2% to 28.5%. | 11-08-2012 |
20120328798 | INTER-LOW-PERMITTIVITY LAYER INSULATING FILM, AND METHOD FOR FORMING INTER-LOW-PERMITTIVITY LAYER INSULATING FILM - A low-permittivity interlayer insulating film of the present invention is formed by a plasma CVD method and includes at least carbon and silicon, wherein a ratio of the carbon to the silicon is 2.5 or more, and relative permittivity is 3.8 or less. Also, a film formation method of a low-permittivity interlayer insulating film of the present invention includes forming a film of an insulating film material that includes at least carbon and silicon by a plasma CVD method, wherein a hydrocarbon is not used as the insulating film material, and a ratio of the carbon to the silicon is 2.5 or more, and relative permittivity is 3.8 or less in the formed low-permittivity interlayer insulating film. | 12-27-2012 |
20130045339 | TECHNIQUES FOR DIAMOND NUCLEATION CONTROL FOR THIN FILM PROCESSING - Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be realized as a method for generating a plasma having a plurality of ions; depositing a plurality of diamond nucleation centers on a substrate with the ions in the plasma using an extraction plate having at least one gap, wherein the plasma ions pass through the at least one gap in the extraction plate to generate a focused ion beam to deposit the plurality of diamond nucleation centers; and controlling the growth of a continuous diamond film from the diamond nucleation centers on the substrate by controlling at least one of a temperature around the substrate, a temperature of the plasma, a pressure around the substrate, and a concentration of the ions in the plasma. | 02-21-2013 |
20130156974 | METHOD FOR MANUFACTURING A POROUS SYNTHETIC DIAMOND MATERIAL - A method of manufacturing a diamond layer having a porous three-dimensional structure, the method being of the type which includes growing the diamond layer from a sacrificial material and gradually decomposing said sacrificial material during growth of the diamond layer, said material including the following steps; 1) provision of a substrate capable of supporting the plasma-enhanced chemical vapour deposition growth of the diamond layer on at least one of the surfaces of of the substrate, the substrate comprising, on said at least one surface thereof, a layer made of a sacrificial material having a porous three-dimensional structure capable of gradually decomposing upon contact with said plasma, the layer of sacrificial material containing diamond grains of nanometric size, and 2) growth by plasma-enhanced chemical vapour deposition of the diamond layer from diamond grains and concomitant and gradual decomposition of the scrificial material upon contact with said plasma. | 06-20-2013 |
20130189448 | DLC FILM COATED PLASTIC CONTAINER, AND DEVICE AND METHOD FOR MANUFACTURING THE PLASTIC CONTAINER - The present invention provides method of DLC film coating a plastic container by DLC film coating the container in an apparatus, where the apparatus comprises a container side electrode which forms one portion of a pressure-reducing chamber and a facing electrode, where the container side electrode is formed so that the average inner hole diameter (R | 07-25-2013 |
20130260058 | ELECTRONIC DEVICES - A method for forming an electronic device having a multilayer structure, comprising: embossing a surface of a substrate so as to depress first and second regions of the substrate relative to at least a third region of the substrate; depositing conductive or semiconductive material from solution onto the first and second regions of the substrate so as to form a first electrode on the first region and a second electrode on the second region, wherein the electrodes are electrically insulated from each other by the third region. | 10-03-2013 |
20130266742 | CHEMICAL VAPOR DEPOSITION APPARATUS FOR SYNTHESIZING DIAMOND FILM AND METHOD FOR SYNTHESIZING DIAMOND FILM USING THE SAME - The present disclosure relates to a chemical vapor deposition apparatus for synthesizing a diamond film and a method for synthesizing a diamond film using the same, which maintains the substrate temperature at an optimum level by suppressing the rise of a substrate temperature, and, thus, improves the degree of activation of a diamond synthesizing gas to increase a diamond growth rate when synthesizing a diamond film. The chemical vapor deposition apparatus for synthesizing a diamond film according to the present disclosure includes a chamber in which a chemical vapor deposition process is performed, a substrate provided in the chamber and giving a place where diamond is grown, and a heat-shielding structure spaced above from the substrate, wherein the heat-shielding structure includes an opening through which a precursor gas is transferable. | 10-10-2013 |
20140030447 | Deposition of Graphene or Conjugated Carbons Using Radical Reactor - Depositing a layer of graphene or conjugate carbons on a surface of a substrate using carbon radicals generated by exposing a carbon material to radicals of a gas. The radicals of the gas are generated by injecting the gas into a plasma chamber and then applying voltage difference to electrodes within or surrounding the plasma chamber. The radicals of the gas come into contact with the carbon material (e.g., graphite) and excite carbon radicals. The excited carbon radicals are injected onto the surface of the substrate, passes through a constriction zone of the reactor assembly and are then exhausted through a discharge portion of the reactor assembly. When the excited carbon radicals come into contact with the substrate, the carbon radicals form a layer of graphene or conjugated carbons on the substrate. | 01-30-2014 |
20140186550 | METHODS FOR THE PRODUCTION OF ALIGNED CARBON NANOTUBES AND NANOSTRUCTURED MATERIAL CONTAINING THE SAME - Disclosed herein is a scaled method for producing substantially aligned carbon nanotubes by depositing onto a continuously moving substrate, (1) a catalyst to initiate and maintain the growth of carbon nanotubes, and (2) a carbon-bearing precursor. Products made from the disclosed method, such as monolayers of substantially aligned carbon nanotubes, and methods of using them are also disclosed. | 07-03-2014 |
20140272194 | ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME - Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film. | 09-18-2014 |
20140329031 | METHOD FOR FORMING COMPLEX FILM OF DIAMOND-LIKE CARBON AND SILICON CARBIDE - A method for applying a resin-repellant coating to an injection molding component made of metal forms a complex film of diamond-like carbon (DLC) and silicon carbide (SiC) on the metal. A vacuum chamber is evacuated of air and an electric field is created in the chamber. A first gas containing carbon and a second gas containing silicon interact with an ionized noble gas as a working gas in the chamber. A first film of SiC is deposited and bonded on the metal die, a second film of DLC from excess carbon atoms is then deposited and bonded on the first film to form the complex film. | 11-06-2014 |
20150037515 | RAPID SYNTHESIS OF GRAPHENE AND FORMATION OF GRAPHENE STRUCTURES - A process for rapid synthesis of few-layer graphene films on Cu foil by microwave plasma chemical vapor deposition (MPCVD). The plasma/metal interaction can be useful for a rapid synthesis of such thin films. The process can produce films of controllable quality from amorphous to highly crystalline by adjusting plasma conditions during growth processes of ˜100 sec duration and with little or no supplemental substrate heating. Films have been characterized using Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results help to identify the stages involved in the MPCVD deposition of thin carbon films on Cu foil. In yet other embodiments, the films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to approximately 2 atomic % are observed. The growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. | 02-05-2015 |
20150056386 | DEVICE FOR DEPOSITING CARBON FILM AND METHOD FOR DEPOSITING CARBON FILM - A carbon film deposition apparatus includes a nozzle which has a plurality of outlets for discharging source gas into a process chamber, and which includes a gas introduction pipe defining therein a gas flow path communicating with each of the plurality of outlets. A portion of a pipe wall of the gas introduction pipe corresponding to formation regions of the plurality of outlets is formed to have a stepped shape such that diameters of the gas flow path of the pipe wall become smaller as a distance from a side of supply of source gas by source gas supply means increases. | 02-26-2015 |
20150064365 | METHODS OF FORMING FILMS - A method of forming a layer, the method including providing a feedstock, the feedstock including a first component and a second component; ionizing at least part of the feedstock thereby forming a plasma, wherein the plasma includes constituents selected from: the first component, derivatives of the first component, ions of the first component, ions of derivatives of the first component, the second component, derivatives of the second component, ions of the second component, ions of derivatives of the second component, or combinations thereof, and wherein the individual identities, individual ratios, total quantities, or any combination thereof of the first and second component in the feedstock can modulate the makeup of the plasma; forming a beam from the plasma; and forming a layer from the beam, wherein the layer includes at least some portion of at least the first or the second component. | 03-05-2015 |
20150099072 | Method for Forming Ti-Containing Film by PEALD using TDMAT or TDEAT - A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH | 04-09-2015 |
20150132506 | Method for Preparing Structured Graphene on SiC Substrate Based on CL2 Reaction - Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Cl | 05-14-2015 |
20150140234 | Device and method for manufacturing nanostructures consisting of carbon - The invention relates to a device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers having a gas inlet element ( | 05-21-2015 |
20150345642 | THIN FILM COATING ON MECHANICAL FACE SEALS - A seal is disclosed. The seal has a first surface and a second surface disposed in a plane generally parallel to the first surface. At least one of the first surface and the second surface is at least partially coated with a film that includes an adhesion layer, a transition layer, and an amorphous diamond-like (a-DLC) layer. | 12-03-2015 |
20150368110 | METHOD OF PREPARING CARBON SHEETS USING GRAPHENE SEED AND CARBON SHEETS PREPARED THEREBY - The present disclosure relates to a method of growing a graphene nanopowder having a size of 10 nm or less into a graphene sheet having a seed size or more by using a graphene nanopowder as a seed. Further, in the present disclosure, a graphite sheet in which 2 to 20 layers of the graphene sheet are laminated may be prepared. The carbon sheet (that is, graphene and graphite sheets) may be prepared by preparing a graphene nanopowder (randomly distributed) on a substrate, and then subjecting the substrate to CVD treatment using a gas including a hydrocarbon gas in a chemical deposition apparatus. | 12-24-2015 |
20150371833 | PLASMA DEVICE, CARBON THIN FILM MANUFACTURING METHOD AND COATING METHOD USING PLASMA DEVICE - A plasma device including a vacuum container, an arc-type evaporation source, a negative electrode member, a shutter, a power source, and a trigger electrode is described. The arc-type evaporation source is fixed to the side wall of the vacuum container so as to face the substrate. The negative electrode member is made from vitreous carbon having a protrusion and is mounted on the arc-type evaporation source. The power source applies a negative voltage to the arc-type evaporation source. The trigger electrode comes into contact with or separates away from the protrusion on the negative electrode member. A negative voltage is applied to the arc-type evaporation source, the trigger electrode is brought into contact with the protrusion on the negative electrode member, an arc discharge is generated, the shutter is opened, and a carbon thin film is formed on the substrate. | 12-24-2015 |
20150376011 | METHODS FOR THE PRODUCTION OF ALIGNED CARBON NANOTUBES AND NANOSTRUCTURED MATERIAL CONTAINING THE SAME - Disclosed herein is a scaled method for producing substantially aligned carbon nanotubes by depositing onto a continuously moving substrate, (1) a catalyst to initiate and maintain the growth of carbon nanotubes, and (2) a carbon-bearing precursor. Products made from the disclosed method, such as monolayers of substantially aligned carbon nanotubes, and methods of using them are also disclosed. | 12-31-2015 |
20160060754 | METHOD OF DEPOSITING THIN FILM - A method of depositing a thin film includes: supplying a first source gas to a reactor during a first time period; supplying a purge gas to the reactor during a second time period; supplying a second source gas to the reactor during a third time period; and supplying the purge gas to the reactor during a fourth time period, wherein the first source gas and the second source gas comprise polymer precursors, and wherein the first source gas and the second source gas are supplied at a temperature that is less than 100° C. or about 100° C. According to the method, uniformity and step coverage of a thin film can be improved by depositing an amorphous carbon layer using polymer precursors according to an Atomic layer deposition (ALD) method. | 03-03-2016 |
20160060761 | METHOD FOR MANUFACTURING A CARBON-CONTAINING PROTECTIVE FILM - A method for manufacturing a protective film having a smaller thickness that none-the-less suppresses degradation of the protective film and maintains corrosion resistance is achieved. The method for manufacturing a carbon-containing protective film includes: (a) forming a carbon material film on a substrate by a plasma CVD method using a starting material gas containing a hydrocarbon gas; and (b) nitriding the carbon material film by using plasma generated from a nitrogen-containing starting material gas in a plasma CVD device having an anode and a cathode, to form the carbon-containing protective film. During nitriding, an anode potential may be equal to or greater than 20 V, an ion acceleration potential difference may be within a range of 20 V to 120 V, and a substrate current density may be within a range of 4×10 | 03-03-2016 |
20160068397 | Apparatus and method for continuous synthesis of carbon film or inorganic material film - An apparatus for continuous synthesis of carbon film or inorganic material film includes an external chamber having a gas intake gate and a gas exhaust gate; a substrate transporting apparatus disposed inside the external chamber and including a rolling-out member, a plurality of rollers, a rolling-in member, and a moving path; a substrate with metal conveyed along the moving path; a temperature controller correspondingly disposed above or under the substrate transporting apparatus, wherein when the substrate with metal passes through the temperature controller, the temperature controller heats the substrate with metal; a vacuum system connected to the external chamber and inhaling a gas through the gas intake gate and exhausting the gas through the gas exhaust gate; and a gas source controller connected to the external chamber and controlling a supply of the gas, wherein the gas includes a carbon source or an inorganic material source. | 03-10-2016 |