Class / Patent application number | Description | Number of patent applications / Date published |
372450013 | With saturable absorption layer | 16 |
20090010292 | Nitride-based semiconductor laser device - A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer. | 01-08-2009 |
20090296767 | Semiconductor Saturable Absorber Reflector and Method to Fabricate Thereof - A design of a semiconductor saturable absorber that offers a convenient and reliable way to control/decrease the recovery time of the absorption. The absorption recovery time is controlled during the epitaxial growth by using lattice-mismatched layer(s) to induce dislocations, and implicitly non-radiative recombination centers within the nonlinear absorbing region. These lattice reformation layer(s) are interposed between the distributed Bragg reflector and the nonlinear absorption region, containing quantum-wells, quantum-dots or bulk semiconductor material. The thickness and composition of the lattice reformation layer(s) is an instrumental to control the amount of non-radiative recombination centers used to trap the optically excited carriers generated in the absorption region. | 12-03-2009 |
20100020837 | SEMICONDUCTOR LIGHT EMISSION DEVICE HAVING AN IMPROVED CURRENT CONFINEMENT STRUCTURE, AND METHOD FOR CONFINING CURRENT IN A SEMICONDUCTOR LIGHT EMISSION DEVICE - A semiconductor light emission device is provided that has a current confinement region that comprises a diffusion accommodation layer located adjacent the active region. The diffusion accommodation layer comprises a material that has a higher bandgap than the bandgap of the material in the active region. Diffusion of dopants into portions of the diffusion accommodation layer forms p+/n junctions on each side of the p/n junction that exists in the active region. The material of the diffusion accommodation layer has a bandgap that is higher than the bandgap of the material of the active region, which ensures that the p+/n junctions turn on at a threshold voltage level that is higher than the threshold voltage level at which the p/n junction turns on. Because of this, the p+/n junctions are effectively turned off while the p/n junction is turned on, which causes the electrical current to be channeled away from the p+/n junctions and into the p/n junction, thereby confining the current to a particular area in the active region. | 01-28-2010 |
20100020838 | LASER DIODE, OPTICAL DISK DEVICE AND OPTICAL PICKUP - A laser diode capable of performing self-pulsation operation, and capable of sufficiently reducing the coherence of laser light and stably obtaining low-noise laser light is provided. A laser diode includes: a laser chip including at least one laser stripe which extends in a resonator length direction between a first end surface and a second end surface opposed to each other, in which the laser stripe includes a gain region and a saturable absorption region in the resonator length direction, and the width of the laser stripe in the saturable absorption region is larger than the width of the laser stripe in the gain region. | 01-28-2010 |
20100150198 | SATURABLE ABSORBER MIRROR - The invention relates to a saturable absorber mirror comprised of
| 06-17-2010 |
20100172388 | LIGHT EMITTING DEVICE - A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light. | 07-08-2010 |
20100189151 | PLANAR WAVEGUIDE LASER DEVICE - A planar waveguide laser device forms a waveguide by a plate-like laser medium having birefringence and clad attached to at least one of the surfaces of the laser medium perpendicular to its thickness direction, amplifies laser light by a gain produced by excitation light incident on the laser medium, and performs laser oscillation. The laser medium is formed of a material having an optic axis on a cross section perpendicular to the light axis, which is the laser travelling direction. The clad is formed of a material having a refractive index in a range between refractive indexes of two polarized lights that travel along the light axis in the laser medium and have oscillation surfaces that are orthogonal to each other. The planar waveguide laser device readily oscillates linearly polarized laser light. | 07-29-2010 |
20110128985 | SEMICONDUCTOR LASER - Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate ( | 06-02-2011 |
20110170569 | SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS - A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode. | 07-14-2011 |
20120147917 | LASER DIODE DEVICE - A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is W | 06-14-2012 |
20130051420 | THREE-TERMINAL VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) AND A METHOD FOR OPERATING A THREE-TERMINAL VCSEL - A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when it is in the logical HIGH state. | 02-28-2013 |
20130064262 | ULTRASHORT PULSE MICROCHIP LASER, SEMICONDUCTOR LASER, AND PUMP METHOD FOR THIN LASER MEDIA - The invention relates to an optically pumped ultrashort pulse microchip laser for generating a laser emission having femto- or picosecond pulses, comprising a substrate, an amplifying laser medium, a first resonator mirror that is at least partially transparent to optical pump radiation, and in particular a saturable absorber structure. The laser medium is applied to the resonator mirror and the substrate and subsequently reduced from the original material thickness to a thickness of less than 200 μm. In order to achieve satisfactory power absorption despite said low thickness, the optical pump radiation is coupled into the laser medium such that resonance occurs for the laser emission and excess intensity increases occur for the pump radiation. | 03-14-2013 |
20130336349 | SEMICONDUCTOR LASER DEVICE - A bi-section type GaN-based semiconductor laser device that has a configuration and a structure in which damage is less likely to be caused in a region in a saturable absorption region that faces a first light emission region is provided. The semiconductor laser device includes a first light emission region, a second light emission region, a saturable absorption region sandwiched by the foregoing light emission regions, a first electrode, and a second electrode. Laser light is emitted from an end face on a second light emission region side thereof. The second electrode is configured of a first portion, a second portion, and a third portion. 112-19-2013 | |
20140079086 | LASER DIODE, OPTICAL DISK DEVICE AND OPTICAL PICKUP - A laser diode capable of performing self-pulsation operation, and capable of sufficiently reducing the coherence of laser light and stably obtaining low-noise laser light is provided. The laser diode includes: a laser chip including at least one laser stripe which extends in a resonator length direction between a first end surface and a second end surface opposed to each other, in which the laser stripe includes a gain region and a saturable absorption region in the resonator length direction, and the width of the laser stripe in the saturable absorption region is larger than the width of the laser stripe in the gain region. | 03-20-2014 |
20140247852 | END-FACE-EMITTING PHOTONIC CRYSTAL LASER ELEMENT - When an end-face-emitting photonic crystal laser element | 09-04-2014 |
20150340840 | SEMICONDUCTOR LASER - Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate ( | 11-26-2015 |