Class / Patent application number | Description | Number of patent applications / Date published |
372380050 | Electrode | 20 |
20090110016 | Gas Laser Device - A gas laser device is presented that produces a near diffraction limited round beam exiting the discharge vessel. Through the use of a simple focusing system, additional waveguide strip and a spatial filter in conjunction with the new asymmetric hybrid planar waveguide resonator, a round diffraction limited beam can be produced exiting the discharge vessel. Furthermore, a second and very similar design is presented that allows for spatial filtering to take place directly outside of the discharge vessel, thereby enabling filtering of the beam to be an added option. | 04-30-2009 |
20090252189 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential. | 10-08-2009 |
20100046563 | Multibeam laser diode - A multibeam laser diode capable of improving heat release characteristics in the case of junction-down assembly is provided. Contact electrodes are provided respectively for protruding streaks of a laser diode device, and pad electrodes are provided to avoid the protruding streaks and the contact electrodes. The contact electrodes and the pad electrodes are connected by wiring electrodes, and the contact electrodes are covered with a first insulating film. Thereby, electric connection is enabled without straightly jointing the contact electrodes to a solder layer. A heat conduction layer configured of a metal is provided on the first insulating film, the heat conduction layer is jointed to the solder layer, and thereby the heat release characteristics are able to be improved even in the case of junction-down assembly. | 02-25-2010 |
20100046564 | SEMICONDUCTOR DEVICE AND ELECTRONIC EQUIPMENT USING SAME - A semiconductor device includes: a first lead having an element mounting portion; a second lead located in a same plane as the first lead, with a predetermined space left between the first lead and the second lead; a molding encapsulant made of a resin for fixing the leads; and a semiconductor element affixed to a top surface of the element mounting portion of the first lead. The molding encapsulant covers at least part of each of upper and lower surfaces of the leads. A resin injection hole mark, which is a mark of a hole through which the encapsulant has been injected, is left on the encapsulant, and part of the resin injection hole mark is located above the first lead or the second lead, and the remaining part of the resin injection hole mark is located above a space between the first lead and the second lead. | 02-25-2010 |
20100172386 | PARTICLE DAMAGE PROTECTION FOR HIGH POWER CO2 SLAB LASER MIRRORS | 07-08-2010 |
20100202480 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting element s includes a semiconductor substrate; a semiconductor laminate structure having a first conductivity-type cladding layer, an active layer, a second conductivity-type cladding layer, and a second conductivity-type contact layer sequentially arranged on the semiconductor substrate; a stripe-shaped waveguide region on an upper surface of the semiconductor laminate structure; and recessed portions on the upper surface, spaced from the waveguide region; a first electrode electrically connected to the semiconductor substrate; a second electrode electrically connected to the contact layer; a pad electrode on the second electrode; and an inner recessed portion electrode in the recessed portions, on an insulating film. | 08-12-2010 |
20110058580 | EXTENDABLE ELECTRODE FOR GAS DISCHARGE LASER - A movable electrode assembly for use in laser system includes a first electrode, a second electrode arranged opposite from the first electrode, the second electrode being spaced apart from the first electrode by a discharge gap and a discharge gap adjuster interfaced with at least one of the second electrode or the first electrode, the discharge gap adjuster configured to adjust the discharge gap. A movable electrode assembly for integration into a housing of a laser system includes a first electrode having a discharge surface, a second electrode having a discharge surface, such that the discharge surface of the first electrode and the discharge surface of the second electrode face each other in a spaced apart setting that defines a desired discharge gap, and a mechanism for moveably adjusting the spaced apart setting toward the desired discharge gap. A method of adjusting a discharge gap is also disclosed. | 03-10-2011 |
20120155501 | ANGULAR EXTRUSION OF COPPER ALLOY ANODES - A method of manufacturing an electrode, in which a solid metal material is extruded through a channel angular extrusion die to form the electrode. The solid metal material comprises copper and at least about 10 wt % zinc, and more particularly, between about 20 and about 40 wt % zinc. Prior to extrusion, the solid metal material may be formed by casting, hot forging, machining and/or hot isostatic pressure such that the solid metal material has dimensions corresponding to the CAE die. After extrusion, the solid metal material can be rolled and/or cut to a desired electrode shape. | 06-21-2012 |
20130343415 | SURFACE EMITTING LASER - A surface emitting laser includes an active layer; a periodic-structure layer including a low-refractive-index medium and a high-refractive-index medium and whose refractive index varies periodically, the periodic-structure layer being provided at a position where light emitted from the active layer couples therewith; and a pair of electrodes from which electricity is supplied to the active layer. The periodic-structure layer is patterned as a square periodic-structure lattice. At least one of the electrodes includes one or more linear electrodes. A direction of each lattice vector of the periodic structure and a longitudinal direction of the linear electrodes are different from each other. | 12-26-2013 |
20140286366 | OPTICAL DEVICE, AND LASER CHAMBER AND GAS LASER APPARATUS USING THE SAME - An optical device includes a plate-like optical element made of a calcium fluoride crystal, a holding member to sandwich and hold the optical element, a seal member provided between the holding member and one surface of the optical element in close contact therewith, and a cushioning member provided between the holding member and the other surface of the optical element in contact therewith. The cushioning member is made of one of a 304 stainless steel, a 303 stainless steel, a 316 stainless steel, a Hastelloyâ„¢ alloy, a carbon steel for machine construction S45C, and Inconelâ„¢. | 09-25-2014 |
20140334510 | LASER TUBE WITH BAFFLES - The tube includes a first electrode having a first electrode inner surface and a second electrode having a second electrode inner surface. The first electrode is separated, in a first transverse direction, from the second electrode thereby defining a gap region having a gap thickness between the first electrode inner surface and the second electrode inner surface. The tube further includes a first and a second elongated baffle member, each having a respective elongated central channel formed in an inner surface thereof. | 11-13-2014 |
20150092804 | SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser element includes a substrate; a semiconductor layer formed on a front surface of the substrate; a first electrode formed on a back surface of the substrate; a second electrode formed on a front surface of the semiconductor layer; and at least one mark configured to allow reading of predetermined information, the at least one mark being formed in at least one of (i) a position on the surface on which the first electrode is formed, spaced apart from the first electrode and (ii) a position on the surface on which the second electrode is formed, spaced apart from the second electrode. The at least one mark is made of a metal material and has a thickness smaller than a thickness of the electrode that is formed on the surface on which the at least one mark is formed. | 04-02-2015 |
20150349490 | SEMICONDUCTOR LASER DIODE - A semiconductor laser diode is disclosed. The semiconductor laser diode including a primary surface constituted by two short sides and two long sides, comprises: an active layer; an electrode provided above the active layer; a first pad connected to the electrode; a second pad connected to the first pad; an inner interconnection configured to connect the electrode to the first pad electrically, the inner interconnection being provided along the long sides; and an outer interconnection configured to connect the first pad to the second pad electrically, the outer interconnection being provided along the long sides, the outer interconnection having a width along the short sides narrower than a width of the first pad along the short sides and a width of the second pad along the short sides. The active layer, the first pad, and the second pad are arranged along the long sides. | 12-03-2015 |
20150364901 | LENS MOUNTING ARRANGEMENTS FOR HIGH-POWER LASER SYSTEMS - In various embodiments, a laser apparatus includes top and bottom electrode mounts, a beam emitter between the electrode mounts, a fast axis collimation lens, an optical rotator, and a lens holder or lens mount positioning the lens and the optical rotator to intercept one or more beams emitted by the beam emitter. | 12-17-2015 |
20150372449 | FLIP CHIP TYPE LASER DIODE - A flip chip type laser diode includes a substrate, a first semiconductor layer, an emitting layer, a second semiconductor layer, at least one current conducting layer, a patterned insulating layer, at least one first electrode and a second electrode. The first semiconductor layer is disposed on the substrate. The emitting layer is disposed on a part of the first semiconductor layer. The second semiconductor layer is disposed on the emitting layer and forms a ridge mesa. The current conducting layer is disposed on a part of the first semiconductor layer. The patterned insulating layer covers the first semiconductor layer, the emitting layer, a part of the second semiconductor layer and a part of the current conducting layer. The first electrode and the second electrode are disposed on areas of the current conducting layer and the second semiconductor layer which are not covered by the patterned insulating layer. | 12-24-2015 |
20160111855 | FLIP CHIP TYPE LASER DIODE AND LATERAL CHIP TYPE LASER DIODE - A flip chip type laser diode includes a removable substrate, a first semiconductor layer, an emitting layer, a second semiconductor layer, at least one current conducting layer, a patterned insulating layer, at least one first electrode and a second electrode. The first semiconductor layer is disposed on the removable substrate. The emitting layer is disposed on a part of the first semiconductor layer. The second semiconductor layer is disposed on the emitting layer and forms a ridge mesa. The current conducting layer is disposed on a part of the first semiconductor layer. The patterned insulating layer covers the first semiconductor layer, the emitting layer, a part of the second semiconductor layer and a part of the current conducting layer. The first electrode and the second electrode are disposed on areas of the current conducting layer and the second semiconductor layer which are not covered by the patterned insulating layer. | 04-21-2016 |
20160134075 | GAS LASER DEVICE - A gas laser device which can perform optical amplification, laser light passing through a laser gas excited by electrical discharge, including: a first and second pair of discharge electrodes arranged longitudinally along an optical axis of the laser light; at least two mirrors reflecting the laser light amplified by the gas laser, the mirrors arranged opposite to each other to interpose a first discharge region defined by the first pair of discharge electrodes and a second discharge region defined by the second pair of discharge electrodes therebetween; and a shielding member located between the first pair of discharge electrodes and the second pair of discharge electrodes, the shielding member protruding from electrode surfaces of the discharge electrodes toward the optical axis of the laser light. The configuration can efficiently suppress parasitic oscillation with a simple structure. | 05-12-2016 |
20160141839 | VERTICAL CAVITY SURFACE EMITTING LASER ARRAY - A VCSEL array includes a base substrate, VCSEL element columns arranged in a row direction (y direction) on a front-surface side of the base substrate and parallel wiring lines that connect the VCSEL element columns in parallel with each other. Each of the VCSEL element columns includes a plurality of VCSEL elements arranged in a column direction (x direction) and a plurality of series wiring lines. The plurality of series wiring lines serially connect every two VCSEL elements that are adjacent to each other in the column direction among the plurality of VCSEL elements in such an orientation that the forward directions of the two VCSEL elements match. Insulating grooves are formed on the base substrate. The insulating grooves electrically insulate the VCSEL element columns from each other. The insulating grooves electrically insulate the VCSEL elements from each other. | 05-19-2016 |
20160190763 | LASER APPARATUS - There may be provided a laser apparatus including: an optical resonator including an output coupler; a laser chamber containing a laser medium and disposed in an optical path inside the optical resonator; a pair of discharge electrodes disposed inside the laser chamber; an electrode gap varying section configured to vary a gap between the discharge electrodes; a laser beam measurement section disposed in an optical path of a laser beam outputted from the output coupler, the laser beam resulting from electric discharge between the discharge electrodes; and a controller configured to control the gap between the discharge electrodes through activating the electrode gap varying section, based on a beam parameter of the laser beam measured by the laser beam measurement section. | 06-30-2016 |
20190148912 | SURFACE-EMITTING QUANTUM CASCADE LASER | 05-16-2019 |