Class / Patent application number | Description | Number of patent applications / Date published |
365215000 | Optical | 7 |
20090175110 | Non-volatile memory element and method of operation therefor - A very small magnetic tunnel junction is formed on a semiconductor p-i-n diode. Spin-polarized current which is generated by circular polarized light or elliptically-polarized light, is injected into a free layer of the magnetic tunnel junction so that magnetization direction (two opposite directions) in the free layer is changed based on the information, whereby information is stored in the memory element. | 07-09-2009 |
20110038221 | SEMICONDUCTOR MEMORY DEVICES, CONTROLLERS, AND SEMICONDUCTOR MEMORY SYSTEMS - A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal. | 02-17-2011 |
20120063253 | OPTICAL MEMORY DEVICE AND METHOD OF RECORDING/REPRODUCING INFORMATION BY USING THE SAME - An optical memory device and a method of recording/reproducing information by using the optical memory device. The optical memory device includes a substrate; a first barrier layer formed on the substrate; a quantum well layer; a second barrier layer; a quantum dot layer; and a third barrier layer. The quantum well layer has an energy band gap which is wider than that of the quantum dot layer, and the second barrier layer has an energy band gap which is wider than that of the quantum well layer, so that electrons in excitons which are generated in the quantum dot layer by light of a certain wavelength are captured by the quantum well layer to record information, and then, recorded information may be erased or reproduced by irradiating light of a certain wavelength to the optical memory device. | 03-15-2012 |
20140085998 | COMPOSITION COMPRISING VARIOUS PROTEORHODOPSINS AND/OR BACTERIORHODOPSINS AND USE THEREOF - The present invention provides a solid material comprising an immobilized mixture of two or more proteorhodopsins, two or more bacteriorhodopsins, or one or more bacteriorhodopsin and one or more proteorhodopsins. The proteorhodopsins are selected from the group consisting of all-trans-retinal-containing proteorhodopsins and retinal analog-containing proteorhodopsins; all of which have absorption spectra that do not overlap. The bacteriorhodopsins are selected from the group consisting of all-trans-retinal-containing bacteriorhodopsins and retinal analog-containing bacteriorhodopsins; all of which have absorption spectra that do not overlap. The present invention also provides an optical information carrier, such as an optical data storage material and a fraud-proof optical data carrier, comprising the above-described solid material and a substrate selected from the group consisting of glass, paper, metal, fabric material, and plastic material, wherein said solid material is deposited on said substrate. The present invention further provides security ink comprising one or more hydrophilic polymers and a mixture of various photochromic materials. | 03-27-2014 |
20140177369 | OPTICAL DATA STORE AND METHOD FOR STORAGE OF DATA IN AN OPTICAL DATA STORE - An optical data store is specified, having a data storage layer with a non-toxic and biodegradable polymer as light-sensitive storage medium which has photo-inducible anisotropy, for the induction of which a threshold value of the optical intensity has to be exceeded. The light-sensitive material is preferably bacteriorhodopsin which, by way of example, is immobilized in a manner embedded in a suitable matrix material or, if appropriate, in a crosslinked manner. The storage medium permits a high storage density and can be applied in a simple manner, for instance by printing onto a substrate. | 06-26-2014 |
20150117128 | OPTOELECTRONIC DEVICE, IN PARTICULAR MEMORY DEVICE - A memory device may include an access transistor, and a memory cell configured to store an item of information. The memory cell may include first and second electrodes configured to have different optoelectronic states corresponding respectively to two values of the item of information, and to switch between the different optoelectronic states based upon a control signal external to the memory cell, the different optoelectronic states being naturally stable in an absence of the control signal. The memory cell may also include a solid electrolyte between the first and second electrodes. | 04-30-2015 |
365216000 | Holographic | 1 |
20090010089 | APPARATUS AND METHOD TO STORE INFORMATION IN A HOLOGRAPHIC DATA STORAGE MEDIUM - A method is disclosed to store information in a holographic data storage medium. The method supplies a holographic data storage medium and provides information. The method defines an Active storage portion for the holographic data storage medium and establishes a threshold access interval. The method determines if the information was last accessed within the threshold access interval. If the information was last accessed within said threshold access interval, the method then stores that information as one or more holograms encoded in said Active storage portion of the holographic data storage medium. | 01-08-2009 |