Class / Patent application number | Description | Number of patent applications / Date published |
365164000 | Electrical contacts | 8 |
20080219048 | Multibit electro-mechanical memory device and method of manufacturing the same - A multibit electro-mechanical memory device capable of increasing an integrated level of memory devices, and a method of manufacturing the same, are provided. The memory device includes a substrate, a bit line on the substrate; a lower word line and a trap site isolated from the bit line, a pad electrode isolated from a sidewall of the trap site and the lower word line and connected to the bit line, a cantilever electrode suspended over a lower void in an upper part of the trap site, and connected to the pad electrode and curved in a third direction vertical to the first and second direction by an electrical field induced by a charge applied to the lower word line, a contact part for concentrating a charge induced from the cantilever electrode thereon in response to the charge applied from the lower word line and the trap site, the contact part protruding from an end part of the cantilever electrode, and an upper word line formed with an upper void on the cantilever electrode. | 09-11-2008 |
20100080052 | ARRANGEMENT AND METHOD FOR CONTROLLING A MICROMECHANICAL ELEMENT - The invention concerns an arrangement for controlling a non-volatile memory arrangement for a circuit comprising: a micromechanical element coupled to a substrate; the micromechanical element being responsive to deflection means arranged on the substrate to control the movement of the micromechanical element between one or more stable states. In addition, the invention concerns a method for controlling a non-volatile memory device arrangement comprising: applying one or more signals to a deflection means for moving a micromechanical element between one or more stable states. To enhance the efficacy of the invention there is further provided a shorting circuit for use in the non-volatile memory arrangement. | 04-01-2010 |
20110122686 | NON-VOLATILE ELECTROMECHANICAL CONFIGURATION BIT ARRAY - A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory. | 05-26-2011 |
20120020151 | STORAGE APPARATUS AND METHOD OF MANUFACTURING THE SAME - A storage apparatus including a circuit board, a control circuit element, a terminal module and a storage circuit element is provided. The circuit board includes a first surface, a second surface, a connect part, openings, metal contacts and metal units. The openings pass through the circuit board from the first surface to the second surface and the metal contacts are exposed on the first surface. The terminal module is disposed on the first surface and has elastic terminals and each of the elastic terminals has a first contact part and a second contact part. The first contact parts respectively contact with the metal contacts and the second contact parts respectively pass through the openings to protrude from the second surface. The metal units are disposed on the second surface and located between the openings and the connect part. Accordingly, the volume of the storage apparatus can be reduced. | 01-26-2012 |
20120268985 | RESONANCE NANOELECTROMECHANICAL SYSTEMS - Systems and methods for operating a nanometer-scale cantilever beam with a gate electrode. An example system includes a drive circuit coupled to the gate electrode where a drive signal from the circuit may cause the beam to oscillate at or near the beam's resonance frequency. The drive signal includes an AC component, and may include a DC component as well. An alternative example system includes a nanometer-scale cantilever beam, where the beam oscillates to contact a plurality of drain regions. | 10-25-2012 |
20140112067 | Apparatus, Storage Device, Switch and Methods, Which Include Microstructures Extending from a Support - An apparatus has a support and a plurality of bendable and conductive microstructures extending from the support. Two adjacent microstructures of the plurality of microstructures define a detectable first state if they are not bent such that end portions thereof, which are distal with respect to the support, do not touch each other, and the two adjacent microstructures of the plurality of microstructures define a detectable second state if they are bent such that the end portions thereof, which are distal with respect to the support, touch each other and are fixed to each other. | 04-24-2014 |
365166000 | Relay | 2 |
20090273971 | CONTINUOUSLY DRIVING NON-VOLATILE MEMORY ELEMENT - Embodiments discussed herein generally relate to utilizing non-volatile memory elements to continuously drive other circuitry. There are many advantages to utilizing non-volatile memory to continuously drive other circuitry. For example, back end of the line (BEOL) compatible process may be used to fabricate the non-volatile memory elements that does not affect any front end of the line (FEOL) devices. This allows for an earlier integration of non-volatile technology into the latest state-of-the-art semiconductor process nodes. This is specifically important for FPGA and CPLDs, which make use of the latest process nodes. | 11-05-2009 |
20110216584 | Electromechanical switch, storage device comprising such an electromechanical switch and method for operating the same - An electromechanical switch is described, which comprises a conductive body and a plurality of carbon nanotubes being separate to each other, each of the carbon nanotubes being connected to at least one common terminal electrode with at least one of its ends, wherein in an open state of the switch each of the carbon nanotubes substantially projects along a surface of the conductive body and keeps up a gap to said surface, and wherein in a closed state of the switch at least one carbon nanotube is bend in a direction of the surface to close an electrical contact between said terminal electrode and the conductive body. The size of the gap between the respective carbon nanotube and the surface is different for each one of the plurality of carbon nanotubes. | 09-08-2011 |