Class / Patent application number | Description | Number of patent applications / Date published |
333189000 | Plural coupled vibrators | 70 |
20080197941 | LADDER TYPE PIEZOELECTRIC FILTER - In a ladder-type piezoelectric filter, attenuation in stop bands on a low frequency side and a high frequency side are increased while a pass band is widened. The ladder-type piezoelectric filter is made up by alternately connecting parallel arms and series arms. The parallel arms are respectively made up by serially connecting parallel resonators and LC element networks, and the series arms are respectively made up of series resonators. The LC element networks are respectively made up so as to be inductive in resonant frequencies of the serially connected parallel resonators. Further, the LC element networks include capacitors which contribute to formation of a new series resonant point in the stop band on the high frequency side. | 08-21-2008 |
20080252397 | BAW Resonator Filter Bandwidth and Out-of-Band Frequency Rejection - Embodiments of the present invention provide systems, devices and methods for improving both the bandwidth of a BAW resonator bandpass filter and the suppression of out-of-band frequencies above the passband. In various embodiments of the invention, blocker inductors are located in series between the filter input and the filter output to realize both bandwidth enhancement and improved out-of-band frequency rejection. For example, a first blocker inductor may be located at the input and a second blocker inductor may be located at the output of a BAW resonator bandpass filter. | 10-16-2008 |
20080252398 | BULK ACOUSTIC WAVE (BAW) FILTER HAVING REDUCED SECOND HARMONIC GENERATION AND METHOD OF REDUCING SECOND HARMONIC GENERATION IN A BAW FILTER - In a filter having a half-ladder structure comprising an alternating series of series branches and shunt branches, including a signal input and a signal output related to a common ground. at least one series branch or one parallel branch of the filter is configured as a BAW device comprising a first BAW resonator and a second BAW resonator connected either antiparallel or antiseries. The second harmonic emission generated by the first BAW resonator substantially cancels the second harmonic emission of the second BAW resonator and the second harmonic emission of at least one other series branch or one other parallel branch of the filter. By this method, the filter's second harmonic emissions are reduced. | 10-16-2008 |
20080297277 | Circuit Working With Acoustic Volume Waves And Component Connected To The Circuit - A circuit for use with bulk acoustic waves includes a first electroacoustic system in a first branch and a second electroacoustic system in a second branch. The first electroacoustic system includes a first resonator and a second resonator that are in series in the first branch, and that are galvanically separated, and acoustically coupled, by a first coupling system. The second electroacoustic system includes a first resonator and a second resonator that are connected in series in the second branch, and that are galvanically separated, and acoustically coupled, by a second coupling system. The first and second electroacoustic systems are acoustically coupled via the first and second coupling systems and/or electrically coupled. | 12-04-2008 |
20080297278 | Bulk Acoustic Wave Device with Coupled Resonators - A bulk acoustic wave device includes first and second resonators, which are acoustically coupled and electrically connected in parallel. | 12-04-2008 |
20080297279 | Coupled Resonator Filter with a Filter Section - A bulk acoustic wave (BAW) filter device includes a first port, a second port, a first coupled resonator filter stage, a second coupled resonator filter stage and a filter section. The first coupled resonator filter stage includes a first BAW resonator connected to the first port and a second BAW resonator acoustically coupled to the first BAW resonator. The second coupled resonator filter stage includes a third BAW resonator connected to the second port and a fourth BAW resonator acoustically coupled to the third BAW resonator. The filter section includes a fifth BAW resonator, the fifth BAW resonator connected between the second BAW resonator and the fourth BAW resonator. | 12-04-2008 |
20080297280 | Integrated Coupled Resonator Filter and Bulk Acoustic Wave Devices - A method for manufacturing a filter device is provided. The filter device comprises a coupled resonator at a first site, a shunt resonator at a second site and a series resonator at a third site, the coupled resonator comprising a first and a second resonator. The method comprising a step of providing a substrate with a piezoelectric layer sandwiched between a first electrode and a first part of a second electrode at the first site and the second site, the piezoelectric layer sandwiched between the first electrode and a second part of the second electrode at the third site. The method further comprising the step of forming a coupling layer on the second electrode, the step of forming a further piezoelectric layer sandwiched between a further first electrode and a further second electrode at the third site and the step of removing the coupling layer at the second and third sites. | 12-04-2008 |
20080309432 | Piezoelectric Resonator Structure and Method for Manufacturing a Coupled Resonator Device - A method for manufacturing a coupled resonator device includes forming a first part of a plurality of layers, trimming an exposed layer of the first part and forming a remaining part of the plurality of layers. The coupled resonator device includes a stack of the plurality of layers, the plurality of layers including a first piezo-layer with a first and a second electrode layer sandwiching the first piezo-layer, a second piezo-layer with a first and a second electrode layer sandwiching the second piezo-layer, the first and second piezo-layers being acoustically coupled to each other. | 12-18-2008 |
20090002098 | Resonator Functioning with Acoustic Volume Waves - A resonator operating with bulk acoustic waves includes a resonator stack. The resonator stack includes a resonator area configured to allow propagation of an acoustic main mode and an acoustic secondary mode. The resonator stack also includes an acoustic mirror that includes a first partial mirror for locking in the acoustic main mode in the resonator area and a second partial mirror for locking in the secondary mode in a resonator space. | 01-01-2009 |
20090079520 | ACOUSTICALLY COUPLED RESONATORS HAVING RESONANT TRANSMISSION MINIMA - A bandpass filter includes input and output terminals, first and second acoustic resonators, and an acoustic coupling layer. The first acoustic resonator includes first and second electrodes, and a piezoelectric layer between the first and second electrodes. The first electrode of the first acoustic resonator is connected to the input terminal. The second acoustic resonator includes first and second electrodes, and a piezoelectric layer between the first and second electrodes. The acoustic coupling is provided between the second electrode of the first acoustic resonator and the first electrode of the second acoustic resonator. The output terminal is connected to the second electrode of the second acoustic resonator. A capacitor extends between the input terminal and the output terminal. The filter's frequency response includes at least two transmission zeros. | 03-26-2009 |
20090096549 | Apparatus with acoustically coupled BAW resonators and a method for matching impedances - An apparatus includes a first bulk acoustic wave (BAW) device including a first impedance and a second BAW device including a second impedance, wherein the first and second impedances are different and the first and second BAW devices are acoustically coupled. | 04-16-2009 |
20090096550 | Bulk acoustic wave device - An apparatus includes a stacked crystal filter and a bulk acoustic wave resonator, which are acoustically coupled. | 04-16-2009 |
20090108959 | Contour-Mode Piezoelectric Micromechanical Resonators - A contour mode micromechanical piezoelectric resonator. The resonator has a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. The piezoelectric resonator has a planar surface with a cantilevered periphery, dimensioned to undergo in-plane lateral displacement at the periphery. The resonator also includes means for applying an alternating electric field across the thickness of the piezoelectric resonator. The electric field is configured to cause the resonator to have a contour mode in-plane lateral displacement that is substantially in the plane of the planar surface of the resonator, wherein the fundamental frequency for the displacement of the piezoelectric resonator is set in part lithographically by the planar dimension of the bottom electrode, the top electrode or the piezoelectric layer. | 04-30-2009 |
20090174503 | INTEGRABLE TUNABLE FILTER CIRCUIT COMPRISING A SET OF BAW RESONATORS - A tunable filter circuit having inputs IN | 07-09-2009 |
20090237180 | BAND-PASS FILTER DEVICE, METHOD OF MANUFACTURING SAME, TELEVISION TUNER, AND TELEVISION RECEIVER - A band-pass filter device includes: a plurality of band-pass filter elements on a principal plane of a substrate; wherein the band-pass filter elements correspond to a plurality of respective channels divided by frequency regions, and each have a plurality of piezoelectric resonators. Each of the piezoelectric resonators includes a piezoelectric film whose periphery is supported by the substrate, a first electrode formed on a lower surface of the piezoelectric film, a second electrode formed on an upper surface of the piezoelectric film and formed in a state of overlapping at least a part of the first electrode with the piezoelectric film interposed between the second electrode and the first electrode, a lower space formed between the substrate and the piezoelectric film, and an upper space formed over the piezoelectric film. | 09-24-2009 |
20090256650 | FILTERING CIRCUIT WITH COUPLED ACOUSTIC RESONATORS - A filter with coupled resonator having a substrate; an acoustic mirror intended to support acoustic resonators, and to isolate these resonators from the substrate; a first structure with an upper resonator and a lower resonator coupled to one another through at least one layer of acoustic coupling; a second structure with an upper resonator and a lower resonator coupled to one another through at least one layer of acoustic coupling; the lower resonators of the first and second structure having the same electrodes. The first and second structures are connected via a fifth resonator for which electrodes and the piezoelectric layer of the lower resonators are of the first and second structure. | 10-15-2009 |
20090261922 | PIEZOELECTRIC RESONATOR AND PIEZOELECTRIC FILTER - A piezoelectric resonator includes a substrate and a thin-film section. The thin-film section includes a first thin-film section supported by the substrate, and an acoustically-isolated second thin-film section which is separated from the substrate. In the second thin-film section, first and second electrodes are arranged on the respective main surfaces of a piezoelectric film, and a vibration section is provided at an area where the first and the second electrodes overlap each other on the second thin-film section when viewed through in the film-thickness direction. The thin-film section further includes a heat-radiating film which is in contact with peripheral edges of at least the first electrode among the first and second electrodes defining portions of a periphery of the vibration section, and which extends from the peripheral edges to the first thin-film section when viewed through in the film-thickness direction. | 10-22-2009 |
20100001813 | Bulk Acoustic Wave Filter Device and a Method for Trimming a Bulk Acoustic Wave Filter Device - A bulk acoustic wave (BAW) filter device includes at least one first serial BAW resonator, at least one first shunt BAW resonator, at least one second serial BAW resonator or at least one second shunt BAW resonator. The resonance frequencies of the first and the second serial BAW resonators or the resonance frequencies of the first and the second shunt BAW resonators are detuned with respect to each other. | 01-07-2010 |
20100117763 | BANDPASS FILTER AND PROCESS OF FABRICATING THE SAME - A bandpass filter includes a combination of a BAW filter and a patterned planar filter with stubs. The BAW filter is composed of a plurality of piezoelectric resonators to give a specific frequency bandpass, while the planer filter is configured to attenuate frequencies near and outside the bandpass. The resonators are connected in a ladder configuration between a first signal transmission path and a ground. The planar filter includes a strip line formed on a dielectric layer to define a second signal transmission path. The BAW filter and the planar filter are formed on a common substrate with the first and second transmission paths connected to each other. The BAW filter, in combination with the patterned planar filter added with the stub, can improve a deep near-band rejection inherent to the BAW filter, exhibiting an excellent out-of-band rejection over certain adjacent frequency ranges outside of the bandpass, and therefore give a sharp and wide bandpass. | 05-13-2010 |
20100134210 | Piezoelectric Resonator and Piezoelectric Filter Device - A piezoelectric resonator includes an acoustic reflective layer including first acoustic impedance sub-layers made of a material with relatively low acoustic impedance and second acoustic impedance sub-layers made of a material with relatively high acoustic impedance. A thin-film laminate is disposed on the acoustic reflective layer. The thin-film laminate includes a piezoelectric thin-film, a first electrode, a second electrode greater than the first electrode, and a mass-adding film. The second electrode is disposed on the acoustic reflective layer. The mass-adding film is disposed in at least one portion of a region outside a piezoelectric vibrational section and extends around the first electrode. The second electrode extends over the piezoelectric vibrational section to a region containing the mass-adding film. | 06-03-2010 |
20100244988 | DEVICE WITH AN ELECTROACOUSTIC BALUN - A device has an electroacoustic interface between interfaces for balanced electrical signals and unbalanced electrical signals (i.e. a balun) includes a film of piezoelectric material having a first and second pair of electrodes on a first surface a common electrode, with at least partial overlaps with all of the electrodes of the first and second pair, on a second surface. The interfaces between the electrodes in the first and second pair have geometrically identical shapes. Piezoelectrically polarized regions are provided in the film at the overlaps of the electrodes with the electrode arrangement. The direction of polarization components of the regions in the overlaps with the first electrode and the second electrode in the first pair are equal to each other. To provide for balun coupling, the directions of the polarization components in the overlaps with the first electrode and the second electrode in the second pair are mutually opposite. | 09-30-2010 |
20100265010 | DEVICE AND METHOD FOR CASCADING FILTERS OF DIFFERENT MATERIALS - Some embodiments of the invention provide a filter having at least one first filter, each first filter being a band-reject type filter having a first set of filter parameters that are a function of a first material used to fabricate the at least one first filter, and at least one second filter, each second filter having a second set of filter parameters that are a function of a second material used to fabricate the at least one second filter, each second filter being one of a band-reject type filter and a band pass type filter. The at least one first filter and the at least one second filter are then cascaded together to form the filter. The first material and the second material are different materials. The cascaded filter has a new third set of filter parameters that are a function of both the first material and the second material. Other embodiments of the invention include a method for fabricating the filter and a method of filtering using such a cascaded filter. | 10-21-2010 |
20100301968 | POWER AMPLIFIER FILTER FOR RADIO-FREQUENCY SIGNALS - A power amplifier filter for radio-frequency signals having an outphasing type architecture comprising a first stage ( | 12-02-2010 |
20110032053 | DUAL INPUT, DUAL OUTPUT FILTERING APPARATUS USING BULK ACOUSTIC WAVE RESONATOR, AND RESONATOR USED AS BULK ACOUSTIC WAVE RESONATOR - A Dual Input, Dual Output filtering apparatus using a Bulk Acoustic Wave Resonators (BAWR), and a resonator used as the BAWR may be provided. A Dual Input, Dual Output filtering apparatus may include a plurality of BAWRs connected in series and parallel. | 02-10-2011 |
20110133856 | Contour-Mode Piezoelectric Micromechanical Resonators - A contour mode micromechanical piezoelectric resonator. The resonator has a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. The piezoelectric resonator has a planar surface with a cantilevered periphery, dimensioned to undergo in-plane lateral displacement at the periphery. The resonator also includes means for applying an alternating electric field across the thickness of the piezoelectric resonator. The electric field is configured to cause the resonator to have a contour mode in-plane lateral displacement that is substantially in the plane of the planar surface of the resonator, wherein the fundamental frequency for the displacement of the piezoelectric resonator is set in part lithographically by the planar dimension of the bottom electrode, the top electrode or the piezoelectric layer. | 06-09-2011 |
20110193656 | ELECTRO-ACOUSTIC FILTER - A device includes a plurality of electrode actuated acoustic resonators coupled to form complementary paths to operate as a filter. Each acoustic resonator has an electrical input and an electrical output that contributes to a static capacitance. A compensation impedance is coupled to at least one of the paths to reduce adverse effects from the static capacitances of the acoustic resonators. | 08-11-2011 |
20120001704 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes resonator structures each including resonators arranged next to each other, and each of the resonator structures is excited in at least two vibration modes as the resonators thereof are coupled and resonate with each other. At least one of the resonator structures exhibits stronger resonance characteristics in one of the vibration modes than in the other vibration mode or modes within the filter band. | 01-05-2012 |
20120007696 | COUPLED ACOUSTIC DEVICES - In one aspect of the invention, an acoustic device has a first coupled resonator filter (CRF) and a second CRF electrically coupled to one another in series. Each CRF has an input port, an output port, a bottom film bulk acoustic resonator (FBAR), an acoustic decoupler formed on the bottom FBAR, and a top FBAR formed on the acoustic decoupler. Each FBAR has a bottom electrode, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. The decoupling layer capacitance arising between the two electrodes enclosing the acoustic decoupler in a CRF is configured to achieve targeted filter response. A compensating capacitance is introduced to improve the amplitude and phase imbalance performance of an unbalanced to balanced CRF by eliminating the existence of asymmetric port-to-ground or feedback capacitance at the balanced output port produced by the decoupling layer capacitance. | 01-12-2012 |
20120098624 | Bulk Acoustic Wave Filter of Ladder-Type Structure - A bulk acoustic wave filter of a ladder-type structure includes a series arm and at least a series arm resonator which is disposed in the series arm, such that the series arm is distributed in series arm sections between an input terminal and an output terminal. The bulk acoustic wave filter further includes a first parallel arm that includes a parallel arm resonator and an inductivity connected in series between the series arm and a reference terminal, and at least a second parallel arm that includes a parallel arm resonator. The first parallel arm and the at least one second parallel arm are connected in parallel between a common one of the series arm sections and the reference terminal. | 04-26-2012 |
20120139664 | LOW PASS FILTER USING BULK ACOUSTIC WAVE RESONATOR (BAWR) - Provided are low pass filters using a bulk acoustic wave resonator (BAWR). A low pass filter may include an input terminal configured to be connected with a first radio frequency (RF) device, an output terminal configured to be connected with a second RF device, a parallel segment including a first BAWR, a third BAWR, and a fifth BAWR that may be connected in parallel with each other to a reference potential, a first series segment having a second BAWR and a first inductor, and a second series segment having a fourth BAWR and a second inductor, and connected in series with the first series segment. | 06-07-2012 |
20120146744 | ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An acoustic wave device includes piezoelectric thin-film resonators, each of which includes: a substrate; a piezoelectric thin-film on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a first addition film that is provided in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film and is located between the piezoelectric thin-film and the upper electrode, the first addition film having a shape different from that of the resonance portion. | 06-14-2012 |
20120194298 | Filter Circuit Having Improved Filter Characteristic - A ladder-type-like filter circuit is specified with improved filter behavior. Inductive elements that interconnect parallel resonators with ground are electromagnetically coupled to one another. | 08-02-2012 |
20120200373 | ACOUSTIC WAVE DEVICE AND FILTER - An acoustic wave device including: a substrate; a piezoelectric film formed on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a mass loading film having a first pattern and a second pattern in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the first pattern having portions and the second pattern having portions interlinking the portions of the first pattern. | 08-09-2012 |
20120206216 | ACOUSTIC WAVE DEVICE INCLUDING A SURFACE WAVE FILTER AND A BULK WAVE FILTER, AND METHOD FOR MAKING SAME - An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material. | 08-16-2012 |
20120293278 | STACKED BULK ACOUSTIC RESONATOR COMPRISING DISTRIBUTED BRAGG REFLECTOR - A device comprises a substrate, an acoustic stack, and a distributed Bragg reflector. The acoustic stack comprises a first electrode formed on the substrate, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer, a second piezoelectric layer formed on the second electrode, and a third electrode formed on the second piezoelectric layer. The distributed Bragg reflector is formed adjacent to the acoustic stack and provides it with acoustic isolation. | 11-22-2012 |
20130082799 | CROSS-SECTIONAL DILATION MODE RESONATORS AND RESONATOR-BASED LADDER FILTERS - Electromechanical systems dilation mode resonator (DMR) structures are disclosed. The DMR includes a first electrode layer, a second electrode layer, and a piezoelectric layer formed of a piezoelectric material. The piezoelectric layer has dimensions including a lateral distance (D), in a plane of an X axis and a Y axis perpendicular to the X axis, and a thickness (T), along a Z axis perpendicular to the X axis and the Y axis. A numerical ratio of the thickness and the lateral distance, T/D, is configured to provide a mode of vibration of the piezoelectric layer with displacement along the Z axis and along the plane of the X axis and the Y axis responsive to a signal provided to one or more of the electrodes. Ladder filter circuits can be constructed with DMRs as series and/or shunt elements, and the resonators can have spiral configurations. | 04-04-2013 |
20130120082 | TWO-PORT RESONATORS ELECTRICALLY COUPLED IN PARALLEL - Systems and method for wideband filter designs comprising two-port piezoelectric resonators electrically coupled in parallel. A resonating circuit comprises a first piezoelectric resonator formed of a first configuration, and a second piezoelectric resonator formed of a second configuration such that outputs of the first and second piezoelectric resonators have a 180-degree phase difference for a same input. The first piezoelectric resonator and the second piezoelectric resonator are coupled electrically in parallel. The first and second piezoelectric resonators have different resonating frequencies respectively controlled by lateral dimensions of the piezoelectric resonators. | 05-16-2013 |
20130176086 | DOUBLE BULK ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE - A method of forming a double bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a first piezoelectric layer on the first electrode, forming a second electrode on the first piezoelectric layer, forming a second piezoelectric layer on the second electrode, and forming a third electrode on the second piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum. | 07-11-2013 |
20130241673 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes: a piezoelectric film made of an aluminum nitride film containing a divalent element and a tetravalent element, or a divalent element and a pentavalent element; and an electrode that excites an acoustic wave propagating through the piezoelectric film. | 09-19-2013 |
20130241674 | ELASTIC WAVE FILTER DEVICE AND COMMUNICATION APPARATUS EQUIPPED WITH THE SAME - An elastic wave filter device has a center frequency of a reception frequency band. A plurality of parallel arms are connected to a portion of a series arm on a second signal terminal side of a portion in which a first series-arm resonator is provided. Series-arm resonators among the plurality of series-arm resonators other than the first series-arm resonator include a series-arm resonator having a resonant frequency higher than the resonant frequency of the first series-arm resonator. The resonant frequency of the first series-arm resonator is equal to the reception frequency band. | 09-19-2013 |
20130271242 | BAND REJECTION FILTER COMPRISING A SERIAL CONNECTION OF AT LEAST TWO PI-ELEMENTS - The invention relates to a band rejection filter comprising a piezoelectric substrate (S) and a serial connection of at least two pi-elements (Pi | 10-17-2013 |
20140055214 | MULTI-MODE BANDPASS FILTER - A multi-mode bandpass filter is described. The bandpass filter includes a first multi-directional vibrating microelectromechanical systems resonator. The bandpass filter also includes a second multi-directional vibrating microelectromechanical systems resonator. The first multi-directional vibrating microelectromechanical systems resonator is in a parallel configuration. The second multi-directional vibrating microelectromechanical systems resonator is in a series configuration. | 02-27-2014 |
20140132367 | COUPLED ACOUSTIC DEVICES - In one aspect of the invention, an acoustic device has a first coupled resonator filter (CRF) and a second CRF electrically coupled to one another in series. Each CRF has an input port, an output port, a bottom film bulk acoustic resonator (FBAR), an acoustic decoupler formed on the bottom FBAR, and a top FBAR formed on the acoustic decoupler. Each FBAR has a bottom electrode, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. The decoupling layer capacitance arising between the two electrodes enclosing the acoustic decoupler in a CRF is configured to achieve targeted filter response. A compensating capacitance is introduced to improve the amplitude and phase imbalance performance of an unbalanced to balanced CRF by eliminating the existence of asymmetric port-to-ground or feedback capacitance at the balanced output port produced by the decoupling layer capacitance. | 05-15-2014 |
20140145799 | ACOUSTIC WAVE BAND REJECT FILTER - A method and system for an acoustic wave band reject filter are disclosed. According to one aspect, an acoustic wave band reject filter includes a substrate and a plurality of acoustic wave band reject filter blocks. The substrate includes bonding pads formed on the substrate. Each one of the plurality of acoustic wave band reject filter blocks is fixed on a separate die. Each separate die has solder balls on a side of the die facing the substrate. The solder balls are positioned to electrically connect the bonding pads formed on the substrate to positions on each of the die. | 05-29-2014 |
20140145800 | ACOUSTIC WAVE BAND REJECT FILTER - A method and system for an acoustic wave band reject filter are disclosed. According to one aspect, an acoustic wave band reject filter includes a substrate and a plurality of acoustic wave band reject filter circuit blocks. The substrate includes bonding pads formed on the substrate. Each one of the plurality of acoustic wave band reject filter circuit blocks is fixed on a separate die. Each separate die has solder balls on a side of the die facing the substrate. The solder balls are positioned to electrically connect the bonding pads formed on the substrate to electrodes of the dies | 05-29-2014 |
20140191825 | RADIO FREQUENCY FILTER AND MANUFACTURING METHOD THEREOF - A radio frequency filter and a manufacturing method thereof are provided. A radio frequency filter includes bulk acoustic wave resonators (BAWRs), the BAWRs including first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof. | 07-10-2014 |
20140191826 | PIEZOELECTRIC THIN FILM RESONATOR AND FILTER - A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region. | 07-10-2014 |
20150097638 | ACOUSTIC FILTER WITH SUPPRESSED NONLINEAR CHARACTERISTICS - An acoustic filter includes a signal input port, a ladder-type filter, a first branch ladder-type filter, a second branch ladder-type filter, and a signal output port. The first branch ladder-type filter and the second branch ladder-type filter are connected in parallel to each other. The signal input port is connected to the ladder-type filter. The ladder-type filter circuit is connected in series to the first branch ladder-type filter and the second branch ladder-type filter. The first branch ladder-type filter circuit and the second branch ladder-type filter are connected to the signal output port. | 04-09-2015 |
20160164487 | BULK ACOUSTIC WAVE FILTER - A bulk acoustic wave filter may include: a first resonator part including one or more first bulk acoustic wave resonators connected between a signal port for transmitting or receiving a signal and a node connected to an antenna port; and a second resonator part including one or more second bulk acoustic wave resonators connected between the signal port and a ground, wherein a quality factor (IF) value of the one or more first bulk acoustic wave resonators is less than a IF value of the one or more second bulk acoustic wave resonators. | 06-09-2016 |
20160164489 | BULK ACOUSTIC WAVE RESONATOR AND FILTER - A bulk acoustic wave resonator and a filter in which partial thicknesses of protection layers or reflection layers thereof are differently formed are provided. The bulk acoustic wave resonator includes a bulk acoustic wave resonating part comprising a piezoelectric layer, and a reflection layer configured to reflect waves of a resonance frequency generated by the piezoelectric layer based on a signal applied to the bulk acoustic wave resonating part. A thickness of a portion of the reflection layer is different from a thickness of a remaining portion thereof. | 06-09-2016 |
20160191012 | RF LADDER FILTER WITH SIMPLIFIED ACOUSTIC RF RESONATOR PARALLEL CAPACITANCE COMPENSATION - An RF ladder filter having a parallel capacitance compensation circuit is disclosed. The parallel capacitance compensation circuit is made up of a first inductive element with a first T-terminal and a first end coupled to a first ladder terminal and a second inductive element with a second T-terminal that is coupled to the first T-terminal of the first inductive element and a second end coupled to a second ladder terminal. Further included is a compensating acoustic RF resonator (ARFR) having a fixed node terminal and a third T-terminal that is coupled to the first T-terminal of the first inductive element and the second T-terminal of the second inductive element, and a finite number of series-coupled ladder ARFRs, wherein the parallel capacitance compensation circuit is coupled across one of the finite number of series-coupled ARFRs by way of the first ladder terminal and the second ladder terminal. | 06-30-2016 |
333190000 | Lattice structure | 4 |
20090009268 | Acoustic wave sensor assembly utilizing a multi-element structure - An acoustic wave sensor assembly includes piezoelectric material, a first acoustic wave resonator element structure mounted on the piezoelectric material for interacting with an electrical signal, the acoustic wave resonator element structure being operable to interact with an acoustic wave propagating within the piezoelectric material to produce a first frequency response. Further acoustic wave resonator element structures are mounted on the piezoelectric material for interacting with electrical signals, the further acoustic wave resonator element structures being operable to interact with further acoustic waves propagating within the piezoelectric material to produce subsequent frequency responses. The first acoustic wave resonator element structure and further acoustic wave resonator element structures are combined to form a ladder or lattice filter network to produce an overall frequency response. Sensitive areas are mounted on the piezoelectric material and associated with the acoustic wave resonator element structures which, if predetermined effects to be sensed or detected are present, are modified thereby to control the nature of the frequency responses with resultant specific perturbations of the combined frequency response and thereby provide information with respect to the predetermined effects to be sensed or detected. | 01-08-2009 |
20130120083 | Contour-Mode Piezoelectric Micromechanical Resonators - A contour mode micromechanical piezoelectric resonator. The resonator has a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. The piezoelectric resonator has a planar surface with a cantilevered periphery, dimensioned to undergo in-plane lateral displacement at the periphery. The resonator also includes means for applying an alternating electric field across the thickness of the piezoelectric resonator. The electric field is configured to cause the resonator to have a contour mode in-plane lateral displacement that is substantially in the plane of the planar surface of the resonator, wherein the fundamental frequency for the displacement of the piezoelectric resonator is set in part lithographically by the planar dimension of the bottom electrode, the top electrode or the piezoelectric layer. | 05-16-2013 |
20160191015 | SPLIT CURRENT BULK ACOUSTIC WAVE (BAW) RESONATORS - An acoustic resonator device includes a temperature compensation structure disposed beneath the first electrode and above the substrate. | 06-30-2016 |
20190149127 | BULK ACOUSTIC RESONATOR AND FILTER | 05-16-2019 |
333191000 | Monolithic structure | 15 |
20080197942 | Radio Frequency Filter - A radio filter has a band pass filter for passing a desired band of signal frequencies and a band stop filter for reducing the passing of a band of undesired signal frequencies. The filter comprises an input terminal, an output terminal, and a filter having a multiple of transmission lines arranged between said input and output terminal which filters input signals through said input terminal to pass signals of a given frequency band. A ground is connected to said transmission lines at first ends of said multiple of transmission lines and acoustic impedance elements are connected between said ground layer and second ends of said multiple transmission lines for providing a stop band filter function of the input signals, and whereby the input signal after band pass filtering and stop band filtering is provided at said output terminal. | 08-21-2008 |
20090295505 | PHONONIC CRYSTAL WAVE STRUCTURES - Phononic crystal wave structures and methods of making same are discussed in this application. According to some embodiments, an acoustic structure can generally comprise a phononic crystal slab configured as a micro/nano-acoustic wave medium. The phononic crystal slab can define an exterior surface that bounds an interior volume, and the phononic crystal slab can be sized and shaped to contain acoustic waves within the interior volume of the phononic crystal slab. The phononic crystal slab can comprise at least one defect portion. The defect portion can affect periodicity characteristics of the phononic crystal slab. The defect portion can be shaped and arranged to enable confinement and manipulation of acoustic waves through the defect portion(s) of phononic crystal slab. Other aspects, features, and embodiments are also claimed and described. | 12-03-2009 |
20100019866 | ACOUSTIC WAVE DEVICE, METHOD OF MANUFACTURING ACOUSTIC WAVE DEVICE AND TRANSMISSION APPARATUS - An acoustic wave device includes a substrate and a plurality of piezoelectric thin film resonators formed over the substrate. Each of the plurality of the piezoelectric thin film resonators includes lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film and opposed to the lower electrode through the piezoelectric film. Each of the piezoelectric thin film resonators is partly supported by the substrate and extends above the substrate to form a cavity between the substrate and each lower electrodes. The cavity continuously extending under the plurality of the piezoelectric thin film resonators. | 01-28-2010 |
20110204996 | ACOUSTIC COUPLING LAYER FOR COUPLED RESONATOR FILTERS AND METHOD OF FABRICATING ACOUSTIC COUPLING LAYER - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; and a single-material acoustic coupling layer disposed between the first and second BAW resonators, the acoustic coupling layer having an acoustic impedance less than approximately 6.0 MRayls and an acoustic attenuation less than approximately 1000 dB/cm. | 08-25-2011 |
20110204997 | BULK ACOUSTIC RESONATOR STRUCTURES COMPRISING A SINGLE MATERIAL ACOUSTIC COUPLING LAYER COMPRISING INHOMOGENEOUS ACOUSTIC PROPERTY - In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer. | 08-25-2011 |
20120218056 | COUPLED RESONATOR FILTER COMPRISING A BRIDGE - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. | 08-30-2012 |
20120218057 | FILM BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE - A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer. | 08-30-2012 |
20120218058 | COUPLED RESONATOR FILTER COMPRISING A BRIDGE AND FRAME ELEMENTS - In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode. | 08-30-2012 |
20120218059 | STACKED BULK ACOUSTIC RESONATOR COMPRISING A BRIDGE AND AN ACOUSTIC REFLECTOR ALONG A PERIMETER OF THE RESONATOR - In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator; a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode. | 08-30-2012 |
20120218060 | BULK ACOUSTIC WAVE RESONATOR COMPRISING BRIDGE FORMED WITHIN PIEZOELECTRIC LAYER - A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer. | 08-30-2012 |
20120280767 | DOUBLE FILM BULK ACOUSTIC RESONATORS WITH ELECTRODE LAYER AND PIEZO-ELECTRIC LAYER THICKNESSES PROVIDING IMPROVED QUALITY FACTOR - A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other. | 11-08-2012 |
20130214879 | LATERALLY COUPLED BAW FILTER EMPLOYING PHONONIC CRYSTALS - An acoustic wave bandpass filter comprises at least two bulk acoustic wave resonators, laterally coupled to each other acoustically, each resonator including a film of piezoelectric material and at least a first electrode and/or a second electrode, said bulk waves propagating in a direction perpendicular to the plane of the film of piezoelectric material, characterized in that: it further comprises at least a first phononic crystal structure between said resonators such that the transmission coefficient of the lateral acoustic waves can be decreased in a direction parallel to the plane of the piezoelectric film; and the first phononic crystal structure is formed in a matrix of dielectric material or with patterns made from dielectric material. | 08-22-2013 |
20160191017 | CO-INTEGRATED BULK ACOUSTIC WAVE RESONATORS - An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures. | 06-30-2016 |
333192000 | With electrical coupling | 2 |
20080297281 | Piezo-on-diamond resonators and resonator systems - Disclosed are piezoelectrically-transduced micromachined bulk acoustic resonators fabricated on a polycrystalline diamond film deposited on a carrier substrate. Exemplary resonators comprise a substrate having a smooth diamond layer disposed thereon. A piezoelectric layer is disposed on the diamond layer and top and bottom electrodes sandwich the piezoelectric layer. The resonant structure comprising the diamond layer, piezoelectric layer and electrodes are released from the substrate and are free to vibrate. Additionally, one or more sensing platforms may be coupled to the substrate to form a mass sensor. | 12-04-2008 |
20090295506 | Bulk Acoustic Wave Device and a Method of its Manufacturing - A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed. | 12-03-2009 |