Class / Patent application number | Description | Number of patent applications / Date published |
327478000 | Bipolar transistor | 39 |
20090102542 | Switch with Reduced Insertion Loss - A circuit includes an amplifier having an input and an output; and at least one transistor comprising at least one terminal and at least one isolated well. The input of the amplifier is electrically connected to the at least one terminal of the transistor; and the output of the amplifier is electrically connected to the at least one isolated well of the at least one transistor. | 04-23-2009 |
20090134934 | ELECTRONIC DEVICE - An electronic device includes a power interface for transmitting power, an integrated circuit capable of resetting, and a switch circuit. The switch circuit is connected to the power interface for transmitting the power to the integrated circuit after the integrated circuit is reset and stop transmitting the power to the integrated circuit if the integrated circuit is resetting. | 05-28-2009 |
20100019830 | Component With a Functionally-Configurable Circuit Arrangement - A component with a functionally-configurable circuit arrangement, has a first switch group with a voltage-dependent switching on or off of a data line and at least one second switch group generating two discrete output voltages separated by an increase in voltage and the switch states for the discrete output voltages may be stored in non-volatile memory. The switching on or off of the data line is determined by the switch state of the first switch group and a third switch group ( | 01-28-2010 |
20100079196 | SYSTEM AND METHOD FOR IMPROVING THE EFFICIENCY AND RELIABILITY OF A BROADBAND TRANSISTOR SWITCH FOR PERIODIC SWITCHING APPLICATIONS - A driver circuit is provided for enabling a transistor collector-emitter path to be used as a broadband periodic switch. The broadband driver circuit controls the magnitude of the transistor base-emitter current in order to enable a CLOSED switch state and to simultaneously control the magnitude of the transistor base-emitter reverse-bias voltage in order to enable the OPEN-switch state. The precise control of these parameters minimizes base-charge storage and prevents reverse-breakdown failure. | 04-01-2010 |
20100156506 | Semiconductor device including insulated gate bipolar transistor and diode - A semiconductor device includes a vertical IGBT and a vertical free-wheeling diode in a semiconductor substrate. A plurality of base regions is disposed at a first-surface side portion of the semiconductor substrate, and a plurality of collector regions and a plurality of cathode regions are alternately disposed in a second-surface side portion of the semiconductor substrate. The base regions include a plurality of regions where channels are provided when the vertical IGBT is in an operating state. The first-side portion of the semiconductor substrate include a plurality of IGBT regions each located between adjacent two of the channels, including one of the base regions electrically coupled with an emitter electrode, and being opposed to one of the cathode regions. The IGBT regions include a plurality of narrow regions and a plurality of wide regions. | 06-24-2010 |
20110006830 | HIGH CURRENT CONTROL CIRCUIT INCLUDING METAL-INSULATOR TRANSITION DEVICE, AND SYSTEM INCLUDING THE HIGH CURRENT CONTROL CIRCUIT - Provided are a high current control circuit including a metal-insulator transition (MIT) device, and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high current control circuit, and a heat generation problem can be solved. The high current control circuit includes the MIT device connected to a current driving device and undergoing an abrupt MIT at a predetermined transition voltage; and a switching control transistor connected between the current driving device and the MIT device and controlling on-off switching of the MIT device. By including the metal-insulator transition (MIT) device, the high current control circuit switches a high current that is input to or output from the current driving device. Also, the MIT device constitutes a MIT-TR composite device with a heat-preventing transistor which prevents heat generation and is connected to the MIT device. | 01-13-2011 |
20110018607 | METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE - Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor. | 01-27-2011 |
20110032022 | DIFFERENTIAL SWITCH WITH OFF-STATE ISOLATION ENHANCEMENT - Techniques are disclosed for reducing off-state leakage current in a differential switching device. The techniques can be embodied, for example, in a method that includes receiving a differential input signal at a differential input of each of a primary switch and a dummy switch. In an enabled-state of the device, the method further includes passing the differential input signal to a differential output of the primary switch. In a disabled-state of the device, the method further includes canceling off-state leakage current at the differential output of the primary switch, by virtue of the dummy switch having its differential output reverse-coupled to the differential output of the primary switch. The method may further include preventing the dummy switch from passing signals other than off-state leakage signals. The techniques can be embodied, for instance, in a switching device. | 02-10-2011 |
20110102056 | METHOD FOR SWITCHING WITHOUT ANY INTERRUPTION BETWEEN WINDING TAPS ON A TAP-CHANGING TRANSFORMER - The invention relates to a method for switching without any interruption between two winding taps (tap n, tap n+1) of a tap-changing transformer, wherein each of the two winding taps is connected to the common load output line via in each case one mechanical switch (Ds) and a series circuit, arranged in series thereto, comprising two IGBTs (Ip, In) which are switched in opposite directions. | 05-05-2011 |
20110298527 | REAL TIME DYNAMIC OPTIMIZATION OF DEADTIME - A deadtime optimization apparatus and method may determine when it is safe to turn a switch ON, eliminating the need to have a switch controller purposely insert a deadtime period in the algorithm (i.e., it can go back to producing ideal PWM). Since the decision of when it is safe to turn ON the switch may be achieved through measurement, it is expected that the length of time may change for each pulse as the operating conditions change. Therefore, the apparatus and methods of the present invention may take on a dynamic characteristic because the safe to turn ON (STTO) time may vary for each pulse. | 12-08-2011 |
20120274388 | SWITCHING ELEMENT HAVING AN ELECTROMECHANICAL SWITCH AND METHODS FOR MAKING AND USING SAME - A switching element having an electromechanical switch (such as an electrically conductive membrane switch, for example a graphene membrane switch) is disclosed herein. Such a switching element can be made and used in a switching power converter to reduce power loss and to maximize efficiency of the switching power converter. | 11-01-2012 |
20130082762 | POWER SWITCH SERIES CIRCUIT AND CONTROL METHOD THEREOF - The present invention provides a power switch series circuit and its control method. The power switch series circuit includes a plurality of series modules, a control module and a drive module. At least one series module has a power switch and a detection module, and the detection module includes a detection unit and an isolation unit, so as to detect the overvoltage and output a voltage detection signal based on the detected voltage. The control module receives the voltage detection signal and outputs the corresponding control signal. The drive module amplifies the control signal to drive each power switch to turn ON or turn OFF. The control module outputs the corresponding control signal to turn off each power switch when the overvoltage happens. | 04-04-2013 |
20130214847 | VERTICALLY BASE-CONNECTED BIPOLAR TRANSISTOR - Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the present disclosure are formed with a CMOS fabrication technique that decreases the transistor size while maintaining the high performance characteristics of a bipolar transistor. | 08-22-2013 |
20130293283 | RADIO FREQUENCY SWITCH COMPRISING HETEROJUNCTION BIOPOLAR TRANSISTORS - A radio-frequency (RF) switch comprises first and second heterojunction bipolar transistors (HBTs) that control transmission of an RF input signal between an input terminal and an output terminal. In some embodiments, the RF input signal is transmitted from the input terminal to the output terminal where the first and second HBTs are turned ON, and otherwise the RF input signal is not transmitted from the input terminal to the output terminal. | 11-07-2013 |
20140167835 | Three Terminal PIN Diode - This disclosure describes a switch having a collector, base, emitter, and an intrinsic region between the collector and base. The intrinsic region increases the efficiency of the switch and reduces losses. The collector, base, and emitter each have respective terminals, and an AC component of current passing through the base terminal is greater than an AC component of current passing through the emitter terminal. Additionally, in an on-state a first alternating current between the base and collector terminals is greater than a second alternating current between the collector and emitter terminals. In other words, AC passes primarily between collector and base as controlled by a DC current between the base and emitter. | 06-19-2014 |
20140191793 | POWER SUPPLY FOR CONTROLLING A POWER SWITCH - It is presented a power supply for providing power to control a power switch for a high voltage application. The power supply comprises: a high voltage divider arranged to be connected to a first current terminal of the power switch; a step down DC/DC converter connected to an output of the high voltage divider, wherein the step down DC/DC converter is arrange to provide an output voltage for control of the at least one power switch to an output of the power supply; and a bypass control unit arranged to control the high voltage divider to short circuit an main input and a main output of the high voltage divider when the voltage across the power switch is lower than a threshold voltage. | 07-10-2014 |
20140354347 | BIPOLAR TRANSISTOR, BAND-GAP REFERENCE CIRCUIT AND VIRTUAL GROUND REFERENCE CIRCUIT - The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap reference circuit, virtual ground reference circuit and double band-gap reference circuit with the bipolar transistor. The bipolar transistor includes: a Silicon-On-Insulator wafer; a base area, an emitter area and a collector area; a base area gate dielectric layer on a top silicon layer and atop the base area; a base area control-gate on the base area gate dielectric layer; an emitter electrode connected to the emitter area via a first contact; a collector electrode connected to the collector area via a second contact; and a base area control-gate electrode connected to the base area control-gate via a third contact. Processes of forming the bipolar transistor are fully compatible with traditional standard CMOS processes; and the base current to turn on the bipolar transistor is based on the GIDL current and formed by applying a voltage to the base area control-gate electrode without any need of contact to the base. | 12-04-2014 |
20150070078 | CIRCUIT AND METHOD FOR CONDUCTING SOFT TURN-OFF OF A DRIVING CIRCUIT OF SEMICONDUCTOR SWITCHING DEVICE - A circuit for conducting soft turn-off includes a semiconductor switching device, a resistor and a sink pin. The second semiconductor switching device has a current inflow terminal connected to a current control terminal of a first semiconductor switching device, and a current outflow terminal connected to a ground. The resistor has a first terminal connected to the current inflow terminal of the second semiconductor switching device, and a second terminal connected to a current control terminal of the first semiconductor switching device. The sink pin applies a value lower than a previous applied value (i.e., a low value) to the current control terminal of the second semiconductor switching device. | 03-12-2015 |
20150303915 | Bidirectional Two-Base Bipolar Junction Transistor Operation, Circuits, and Systems with Double Base Short at Initial Turn-Off - Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. | 10-22-2015 |
20160056814 | Bidirectional Two-Base Bipolar Junction Transistor Operation, Circuits, and Systems with Collector-Side Base Driven - Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. | 02-25-2016 |
20160056815 | Bidirectional Two-Base Bipolar Junction Transistor Operation, Circuits, and Systems with Diode-Mode Turn-On - Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. | 02-25-2016 |
20160065202 | Bidirectional Two-Base Bipolar Junction Transitor Operation, Circuits, and Systems with Double Base Short at Initial Turn-Off - Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. | 03-03-2016 |
20160204779 | Operating Point Optimization with Double-Base-Contact Bidirectional Bipolar Junction Transistor Circuits, Methods, and Systems | 07-14-2016 |
327479000 | Special four or more electrode device (e.g., multiple bases, three electrode bipolar with FET gate, etc.) | 2 |
20100182071 | High-voltage solid-state switch - A solid-state switch according to the invention is designed to be connected in series with a load. The switch comprises at least two electric switching means connected in parallel, measuring means designed to measure an electric voltage at the terminals of the electric switching means and a main current flowing in the load, and control means delivering a control signal to act on opening and closing according to the value of the main current. The state of conduction of the first electric switching means depends at the same time on the main current flowing in the load, on a control current, on a control voltage delivered by the control means, and on the gain of the first electric switching means. | 07-22-2010 |
20110018608 | Bipolar Transistor, Band-Gap Reference Circuit and Virtual Ground Reference Circuit - The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap reference circuit, virtual ground reference circuit and double band-gap reference circuit with the bipolar transistor. The bipolar transistor includes: a Silicon-On-Insulator wafer; a base area, an emitter area and a collector area; a base area gate dielectric layer on a top silicon layer and atop the base area; a base area control-gate on the base area gate dielectric layer; an emitter electrode connected to the emitter area via a first contact; a collector electrode connected to the collector area via a second contact; and a base area control-gate electrode connected to the base area control-gate via a third contact. Processes of forming the bipolar transistor are fully compatible with traditional standard CMOS processes; and the base current to turn on the bipolar transistor is based on the GIDL current and formed by applying a voltage to the base area control-gate electrode without any need of contact. | 01-27-2011 |
327482000 | Plural | 14 |
20090251198 | Circuit Arrangement and Method for Driving an Electronic Component With an Output Signal From a Microprocessor - A circuit arrangement for driving an electronic component with the output signal (V | 10-08-2009 |
20100164601 | CONTROL CIRCUIT FOR A POWER SEMICONDUCTOR ASSEMBLY AND POWER SEMICONDUCTOR ASSEMBLY - Disclosed is a control circuit for controlling a controllable power semiconductor switch, and to a power semiconductor module. The control circuit comprises at least two circuit sets, each having a power driver. The power driver of each of the circuit sets is provided with power via impedance components having an impedance other than zero. | 07-01-2010 |
20100188135 | LOAD BALANCING OF PARALLEL CONNECTED INVERTER MODULES - A method and an arrangement are disclosed for balancing load between parallel connected inverter modules, which inverter modules are arranged to supply a common load. The method can include providing similar switching instructions for parallel connected inverter modules, determining on the basis of phase currents of each parallel inverter module a first time period for each output phase of each inverter module for correcting current imbalance by advancing or delaying turn-on or turn-off time instants of switch components of the inverter modules, and advancing or delaying the turn-on or turn-off time instants of the switching instructions based on the first time period. The method also can include determining temperatures of each output phase of each inverter module, modifying the switching instructions for one or more of the parallel inverter modules for controlling the temperatures of the output phases, and controlling the inverter modules with a switching instruction in which the turn-on or turn-off times have been advanced or delayed in respect of one or more parallel modules and further modified in respect of one or more inverter modules. | 07-29-2010 |
20100308892 | STATE QUANTITY DETECTION METHOD IN POWER CONVERTING APPARATUS AND POWER CONVERTING APPARATUS - A current-source converter includes high-arm side switching elements and low-arm side switching elements. A voltage between the DC power supply lines is detected as a line voltage of an input line, based on a conduction pattern of the high-arm side switching elements and the low-arm side switching elements. | 12-09-2010 |
20110025405 | SWITCHING CIRCUIT - A switching circuit includes a first switching module, a second switching module, a first relay module, a second relay module, and a processing module. The first switching module includes a switch and a first transistor. The base of the first transistor functions as a first reset terminal. The second switching module includes a second transistor. An output terminal of the second relay module functions as a second reset terminal. Two input terminals of the processing module are connected to the first and second reset terminals respectively. The processing module resets a system with a first type or a second type according to voltages of the first and second reset terminals. | 02-03-2011 |
20110133817 | TAP SWITCH WITH SEMICONDUCTOR SWITCHING ELEMENTS - The invention relates to a tap switch for uninterrupted changeover between two winding taps (tap n, tap n+1) of a tapped transformer, wherein each of the two winding taps is connected to the common outgoing load line via in each case a mechanical switch (Ds) and a series circuit which is arranged in series therewith and which is composed of two oppositely connected IGBTs (Ip, In). According to the invention, each IGBT is bridged by in each case a specially dimensioned varistor (Vp, Vn) connected in parallel therewith. | 06-09-2011 |
20110156797 | POWER SEMICONDUCTOR MODULE AND SEMICONDUCTOR POWER CONVERTER PROVIDED WITH THE SAME - A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor. | 06-30-2011 |
20110187440 | ELECTRONIC APPARATUS AND POWER SUPPLY DEVICE - The electronic apparatus includes a direct-current voltage generation part that generates a direct-current voltage from a commercial power supply; a switching part that switches between an on-state in which the direct-current voltage from the direct-current voltage generation part is output, and an off-state in which the output of the direct-current voltage is shut down, a control part that controls operation of the direct-current voltage generation part; and a power supply maintaining part connected to the direct-current voltage generation part, the power supply maintaining part instructing the switching part to be in the on-state or the off-state, and consequently, enables provision of a soft-switch electronic apparatus that after recovery of a power failure, automatically returns to a state before occurrence of the power failure. | 08-04-2011 |
20110309875 | CONVERTER LIFETIME IMPROVEMENT METHOD FOR DOUBLY FED INDUCTION GENERATOR - The present techniques include methods and systems for operating converter to maintain a lifespan of the converter. In some embodiments, the operating frequency of the converter may be increased such that stress may be reduced on the bond wires of the converter. More specifically, embodiments involve calculating the aging parameters for certain operating conditions of the converter operating in a maximum power point tracking (MPPT) mode and determining whether the MPPT operation results in aging the converter to a point which reduces the converter lifespan below a desired lifespan. If the MPPT operation reduces the converter lifespan below the desired lifespan, the frequency of the converter may be increased such that the converter may be controlled to operate at a percentage of MPPT. Thus, in some embodiments, power output may be optimized with respect to maintaining a desired lifespan of the converter. | 12-22-2011 |
20120038412 | SWITCH DEVICE - A switch device executes a multi-state function to a computer. The computer has a system on chip. The switch device comprises a switch, a power output circuit, a control circuit, a timer circuit and an interface circuit of the system on chip. A user can press the switch, the control circuit controls the power output circuit to output a control signal to the system on chip for controlling the computer turning on or going into suspend state. When the user continues to press the switch, the timing circuit will execute a timer function to the switch device. | 02-16-2012 |
20130106495 | SWITCH | 05-02-2013 |
20140218099 | ELECTRONIC APPARATUS - An electronic apparatus is provided which includes switching elements, resonance suppression resistors which have first ends connected to control terminals of the switching elements and second ends having a common connection, an on-drive circuit which has an on-drive resistor and is connected to a drive power circuit, and which is supplied with voltage from the drive power circuit and applies electric charge to the control terminals of the switching elements via the on-drive resistor to turn on the switching elements, and an off-drive circuit which has an off-drive resistor and releases electric charge from the control terminals of the switching elements via the off-drive resistor to turn off the switching elements. A resistance of the off-drive resistor is set to be smaller than a resistance of the resonance suppression resistors. The off-drive circuit releases electric charge from the control terminals of the switching elements not via the resonance suppression resistors. | 08-07-2014 |
327487000 | Control circuit in cascade | 1 |
20100327949 | ELECTRIC POWER CONVERTER - An electric power converter has a semiconductor module and a capacitor. The positive side semiconductor module has a positive terminal and the 1st intermediate terminal while the negative side semiconductor module has a negative terminal and the 2nd intermediate terminal. These terminals are formed in projected forms. The positive terminal and the negative terminal are connected to the capacitor by a positive bus bar and a negative bus bar, respectively. The 1st intermediate terminal and the 2nd intermediate terminal are connected each other by an intermediate bus bar. The positive and the negative side semiconductor modules, the capacitor, the positive, the negative and the intermediate bus bars constitute one closed circuit. The direction of the each current that flows to each of the main part portion, the positive, the negative and the intermediate bus bars opposes the neighboring current when a closed current flows in the closed circuit. | 12-30-2010 |
327489000 | Control circuit with common emitter | 1 |
20110043273 | PULSE WIDTH MODULATION CONTROL OF A MATRIX CONVERTER - A matrix converter includes a plurality of switching elements and is adapted to receive a multi-phase alternating current (AC) input signal having an input frequency and to generate a multi-phase AC output signal having an output frequency. The phases of the input signal are sorted as a function of their instantaneous voltage amplitude ( | 02-24-2011 |