Entries |
Document | Title | Date |
20080197893 | VARIABLE OFF-CHIP DRIVE - A driver circuit includes a set of selectable drivers each having an individual drive capability, the drivers being selectable such that i) when a subset of the drivers is selected, a signal will be driven by the drivers at a first drive level, and ii) when the subset of the drivers and at least one additional driver is selected, signal will be driven by the drivers at a level that is greater than the first level by a level of drive provided by the least one additional driver. | 08-21-2008 |
20080204087 | METHOD AND CIRCUIT ARRANGEMENT CONFIGURED FOR DRIVING A FIELD-EFFECT-CONTROLLED TRANSISTOR - A method and circuit arrangement including driving a field effect controlled transistor. One embodiment provides a first load terminal, a second load terminal and a control terminal. The control terminal is driven, at least during a Miller plateau phase of the transistor, with a pulse-width-modulated control signal whose period duration is shorter than the duration of the Miller plateau phase. | 08-28-2008 |
20080224738 | HIGH-SIDE SWITCH WITH A ZERO-CROSSING DETECTOR - A circuit arrangement comprising a high-side semiconductor switch with a first load terminal connected to a first supply terminal receiving an input voltage, a second load terminal connected to an output terminal providing an output signal, and a control terminal, a floating driver circuit connected to the control terminal for driving the semiconductor switch, a level shifter receiving an input signal and providing a floating input signal dependent on the input signal, a floating control logic receiving the output signal and the floating input signal and providing at least one control signal to the floating driver circuit, wherein the floating control logic comprises means for detecting an edge in the output signal and means for generating the control signal dependent on the result of the edge detection. | 09-18-2008 |
20080284471 | Current load driving circuit - A current load driving circuit for driving a current load, including: a first current mirror circuit that outputs a current; and a second current mirror circuit that receives the current outputted from the first current mirror circuit as an input current and then amplifies the input current to drive the current load. The whole of the first current mirror circuit and the second current mirror circuit is divided into an input circuit and an output circuit; and the divided position is provided on a voltage route of the first current mirror circuit or a voltage route of the second current mirror circuit. | 11-20-2008 |
20080290911 | MOSFET gate drive with reduced power loss - A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred to charge and discharge the gate of the MOSFET is thereby reduced, and the efficiency of the MOSFET is improved. A feedback circuit may be used to assure that the magnitude of current in the power MOSFET in its low-current condition is correct. Alternatively, a trimming process may be used to correct the magnitude of the voltage supplied by the gate driver to the gate of the power MOSFET in the low-current condition. | 11-27-2008 |
20080309381 | Device for Controlling a High-Voltage Transistor, in Particular a Mos Transistor of a High-Voltage Radio-Frequency Generator for the Spark Ignition of an Internal Combustion Engine - A control device including: an input terminal for receiving a logic control signal; an output terminal for delivering an output control signal from the high-voltage MOS transistor; a first NMOS control transistor with low internal impedance, which is connected between ground and the output terminal and the gate of which is connected to the input terminal; and a second PMOS control transistor, which is connected between a supply terminal and the output terminal and the gate of which is connected to the input terminal by a bipolar transistor mounted to a common base, and which is current controlled at the emitter thereof by a capacitive connecting circuit. | 12-18-2008 |
20090021287 | Circuit and method for driving organic light emitting diode - A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED. | 01-22-2009 |
20090066373 | DEVICE FOR ADJUSTING CHIP OUTPUT CURRENT AND METHOD FOR THE SAME - A device for adjusting chip output current and a method for the same are provided. The device includes: a driving circuit for outputting a driving current according to a control signal, wherein the driving current flows to a reference resistor in another chip so as to generate an output voltage; and a detecting circuit coupled to the driving circuit and adapted for detecting the output voltage and a reference voltage, so as to generate the control signal; wherein the control signal controls the number of parallel connections of NMOS transistors or PMOS transistors in the driving circuit, so as to adjust the magnitude of the driving current. | 03-12-2009 |
20090066374 | Drive circuit, light emitting diode head, and image forming apparatus - A drive circuit is provided for selectively driving a driven element. The drive circuit includes a discharge section for discharging charges, which are accumulated in the driven element when the drive element is turned on, when the drive element is turned off. The drive circuit may include a drive element for driving the driven element. The drive element includes a first ground route disposed separately from a second ground route of the driven element. The first ground route is connected to the second ground route through a connection cable. A diode may be disposed between the connection cable and at least one of the first ground route and the second ground route. | 03-12-2009 |
20090096493 | Driving circuit, LED head and image forming apparatus - A driving circuit is supplied capable of preventing excessive overshoot from occurring when electric current of LED rises; preventing degradation of LED that is caused by peak electric current; and preventing the life of LED from shortening. In the driving circuit, a drive transistor supplies drive electric current to record elements to construct an array, and a reference electric current generating circuit that provides a control voltage to the drive transistor and controls the drive electric current, wherein the drive transistor is composed of a first PMOS transistor and a second PMOS transistor that are connected in series; and the reference electric current generating circuit has a resistance element and a operational amplifier that are used to set a reference electric current for deciding the control voltage, wherein an output of the operational amplifier is provided to a control terminal of the first PMOS transistor; and a drive electric current ON/OFF signal to control on/off of the drive electric current is provided to a control terminal of the second PMOS transistor. | 04-16-2009 |
20090108884 | High Side Boosted Gate Drive Circuit - A high-side boosted gate drive circuit is disclosed. In a particular example, an output driver is described, comprising a switching device configured to selectively conduct current in response to a charge being present at a control terminal for a duty cycle, a charging device configured to deliver charge to the control terminal based on the first duty cycle, a charge control device configured to selectively couple the charging device to deliver charge to the control terminal and to selectively decouple the charging device from the control terminal to charge the charging device, and a discharge control device configured to remove charge from the control terminal. | 04-30-2009 |
20090146698 | DRIVING CIRCUIT AND A PIXEL CIRCUIT INCORPORATING THE SAME - A driving circuit includes: a switch unit operable according to a scan signal, and adapted for permitting transfer of a data signal when operating in an on state; a capacitor having a first end that is coupled to the switch unit, and a second end; a first transistor having a first terminal that is adapted for coupling to a voltage source, a second terminal that is coupled to the second end of the capacitor and that is adapted to be coupled to a load, and a control terminal that is coupled to the first end of the capacitor; and a second transistor having a first terminal that is adapted for coupling to the voltage source, a second terminal coupled to the second terminal of the first transistor, and a control terminal that is adapted for receiving a bias voltage. Each of the first and second transistors operates in the linear region. | 06-11-2009 |
20090160498 | Semiconductor output circuit for controlling power supply to a load - Between a control terminal (gate) of an output transistor of a source follower configuration and an output terminal to which a load is coupled, a depletion transistor having a relatively lower breakdown voltage (that is, smaller device-area) is provided as a shutdown transistor of the output transistor, to thereby control a conductive state/nonconductive state of the depletion transistor. There are provided: the output transistor of the source follower configuration coupled between a first power supply line and the output terminal; the load coupled between the output terminal and a second power supply line; the depletion transistor coupled between the gate of the output transistor and the output terminal; and a control circuit controlling the conductive state/nonconductive state of the depletion transistor by applying, between a gate and a source thereof, a voltage smaller than a voltage deference between a potential of the first power supply line and a potential of the second power supply line. | 06-25-2009 |
20090160499 | Semiconductor output circuit - To improve a depletion transistor provided between a control terminal of an output transistor and an output terminal coupled to a load not to enter a conductive state when the output transistor is in the conductive state. The output transistor is served as a source follower. Control voltages which controlling the conductive state/nonconductive state of the depletion transistor are supplied to both a control terminal (gate) and a substrate terminal (back gate) of the depletion transistor. | 06-25-2009 |
20090160500 | POWER MANAGEMENT SYSTEMS WITH CHARGE PUMPS - A driving circuit for an N-channel Metal Oxide Semiconductor (NMOS) transistor can include a charge pump unit and a driver coupled to the charge pump. The charge pump can receive a source voltage and output an output voltage higher than the source voltage, where the source voltage is applied to a source terminal of the NMOS transistor. The driver receives the output voltage of the charge pump unit and converts the output voltage to a driving voltage operable for conducting the NMOS transistor. | 06-25-2009 |
20090237126 | GATE DRIVER FOR SWITCHING POWER MOSFET - A gate driver for switching power MOSFET including a MOS pair, a first conduction path, and a second conduction path is disclosed. The MOS pair electrically coupling gate of the power MOSFET, for controlling turning on or turning off the power MOSFET. The first conduction path electrically couples to gate of the power MOSFET and the MOS pair, and has a constant resistance. The second conduction path electrically coupling to gate of the power MOSFET and the MOS pair, having variable resistance corresponding to gate voltage of the power MOSFET. | 09-24-2009 |
20090237127 | OPTICAL-SWITCH DRIVE CIRCUIT AND METHOD THEREOF - An optical-switch drive circuit including a driver unit that generates, in response to a control signal, an on/off signal for driving a semiconductor optical amplifier gate switch, and a buffer unit having a high input impedance and connected between an output terminal outputting the on/off signal and the semiconductor optical amplifier gate switch. In the optical-switch drive circuit the buffer unit may include a high-resistance voltage divider that is connected with the output terminal, and an operational amplifier that buffers, and provides to the semiconductor optical amplifier gate switch, a divided voltage of the voltage divider. | 09-24-2009 |
20090243667 | OUTPUT DRIVING DEVICE - An output driving device capable of improving a slew rate is provided. The output driving device includes a push-pull type driving unit configured with a pull-up PMOS transistor and a pull-down NMOS transistor, wherein body biases of the pull-up PMOS transistor and the pull-down NMOS transistor are controlled for control of a slew rate of an output signal of the driving unit. | 10-01-2009 |
20090278572 | Load-driving circuit having two transistors switched for heat dissipation - A load-driving circuit supplies electric current to a load, such as a resistor of an airbag squib. The load-driving circuit includes high side and low side current control circuits, both connected in series. Each current control circuit is composed of a driving transistor, a resistor and a current mirror circuit for controlling operation of the driving transistor. The components in the load-driving circuit are positioned in an integrated circuit chip to generate different temperature gradients among the components. For example, the low side resistor is positioned close to the high side driving transistor, so that the low side resistor is heated by the high side driving transistor controlled under a constant current control. As the low side resistor is heated, the high side driving transistor is switched from the constant current control to a full-on control. In this manner, controls of both driving transistors are automatically switched thereby to avoid overheating of one of the driving transistors. | 11-12-2009 |
20090284287 | Output buffer circuit and integrated circuit - Disclosed herein is an output buffer circuit including: a power supply; an output circuit having a first field-effect transistor and a second field-effect transistor; an output control circuit; a substrate-voltage control circuit; a gate-voltage control circuit; and a signal supplying section. | 11-19-2009 |
20090289669 | CONTROLLING THE SLEW-RATE OF AN OUTPUT BUFFER - An output buffer provided according to an aspect of the present invention is designed to generate an output signal with a slew rate that is substantially independent of the threshold voltage of transistors contained within. An output buffer provided according to another aspect of the present invention provides output signals with different slew rates depending on the magnitude of the load capacitance at the output node of the output buffer. | 11-26-2009 |
20090289670 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A buffer circuit is provided between a gate terminal of a pull-down transistor and a threshold circuit receiving a gate signal as an input signal. A voltage applied to an output terminal of a power semiconductor element from an external battery power supply is supplied to the buffer circuit through a resistive element. The buffer circuit converts the level of an on-signal output from the threshold circuit into a voltage higher than the threshold of the pull-down transistor, so that the pull-down transistor operates surely to turn off the power semiconductor element even when the level of the gate signal is low. Thus, there is provided a semiconductor integrated circuit device having a power semiconductor element which can be turned off by sure operation of a pull-down semiconductor element. | 11-26-2009 |
20090309634 | TRANSISTOR GATE DRIVING CIRCUIT WITH POWER SAVING OF POWER CONVERTER - A transistor gate driving circuit is developed for power saving. It includes a first high-side transistor, a second high-side transistor and a low-side transistor. A voltage clamp device is connected to the gate terminal of the first high-side transistor to limit the maximum output voltage. A detection circuit is coupled to detect a feedback signal of the power converter. The feedback signal is correlated to the output load of the power converter. The detection circuit will generate a disable signal in response to the level of the feedback signal. The disable signal is coupled to disable the second high-side transistor once the level of the feedback signal is lower than a threshold. | 12-17-2009 |
20090315594 | Source/Emitter Follower Buffer Driving a Switching Load and Having Improved Linearity - A source follower or emitter follower buffer provided according to an aspect of the present invention includes a capacitor connected between the input path and a node formed by the junction of a pair of transistors forming a cascoded current source connected to the output of the buffer. The capacitor passes input signal current directly to a switching load connected to the output of the buffer, and very little signal-dependant current flows through the transistor receiving the input signal. As a result, input-output non-linearity due to signal-dependant modulation (variation) of transconductance of the transistor receiving the input signal is minimized. When incorporated in switched-capacitor analog to digital converters, the buffer facilitates generation of digital codes that represent an input signal more accurately. | 12-24-2009 |
20090315595 | OUTPUT DRIVE CIRCUIT - An output drive circuit includes: a totem-pole output including: a high-side transistor (HST) with drain and source, an output stage power supply voltage applied to the drain, the source connected to the first node (N | 12-24-2009 |
20090322382 | Semiconductor Device, Driving Method Thereof and Electronic Device - The invention provides a semiconductor device having a current input type pixel in which a signal write speed is increased and an effect of variations between adjacent transistors is reduced. When a set operation is performed (write a signal), a source-drain voltage of one of two transistors connected in series becomes quite low, thus the set operation is performed to the other transistor. In an output operation, the two transistors operate as a multi-gate transistor, therefore, a current value in the output operation can be small. In other words, a current in the set operation can be large. Therefore, an effect of intersection capacitance and wiring resistance which are parasitic on a wiring and the like do not affect much, thereby the set operation can be performed rapidly. As one transistor is used in the set operation and the output operation, an effect of variations between adjacent transistors is lessened. | 12-31-2009 |
20100013525 | Output driving device in semiconductor device - An output driving device prevents an inflow of external current through an output terminal even when there is no power supply. The output driving device includes an output circuit that maintains an output terminal at a low impedance state by receiving a supply of power in an output drive operation and maintains the output terminal at a high impedance state by receiving the supply of power in a non-output drive operation and a leakage prevention unit coupled to the output terminal of the output circuit, the leakage prevention unit preventing a current inflow to the output circuit through the output terminal when the supply of power is not supplied to the output circuit. | 01-21-2010 |
20100019807 | Current-source gate driver - Provided is a current-source gate driver for use with a switching device having a gate capacitance, including an input terminal for receiving a DC voltage; a first switch connected between the input terminal and an output terminal; a second switch connected between the output terminal and a circuit common; a series circuit comprising a first capacitor and an inductor, the series circuit connected between the input terminal and the output terminal; wherein the gate capacitance of the switching device is connected between the output terminal and the circuit common. The current-source gate driver improves efficiency of the power switching devices of a voltage regulator module or other switching converter. | 01-28-2010 |
20100019808 | DRIVING CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT - Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element ( | 01-28-2010 |
20100039146 | High-Speed Multiplexer and Semiconductor Device Including the Same - High speed multiplexers include a first N-to-1 selection circuit, where N is an integer greater than one, a second N-to-1 selection circuit and an output driver. The first N-to-1 selection circuit is configured to route a true or complementary version of a selected first input signal (from amongst N input signals) to an output thereof in response to a first multi-bit selection signal, where N is an integer greater than one. The second N-to-1 selection circuit is configured to route a true or complementary version of the selected first input signal to an output thereof in response to a second multi-bit selection signal. The output driver includes a pull-up circuit, which is responsive to a signal generated at the output of the first N-to-1 selection circuit, and a pull-down circuit, which is responsive to a signal generated at the output of the second N-to-1 selection circuit. | 02-18-2010 |
20100060326 | CONTROL OF POWER SEMICONDUCTOR DEVICES - This invention relates to a control method and a circuit for MOS-gated power semiconductor switching devices such as IGBTs or MOSFETs, which allows control and optimisition of the current and voltage commutation of a power semiconductor switching device and freewheel diode pair in the basic half-bridge circuit found in a wide range of equipment. The method comprises the stages of: applying, upon receipt of a switch-on command signal, a voltage function to the control terminal or the gate of the power semiconductor switching device that allows a regulated current rise in the device whilst maintaining the voltage across the device falling at a predetermined rate; and at the instant when the voltage across the diode begins to change from the on-state towards the off-state level, applying a voltage function to the control terminal or the gate of the power semiconductor switching device to enable the voltage falling across the power semiconductor switching device to track the voltage falling across the diode in order to ensure a fast and controlled completion of the switching operation without diode reverse voltage overshoot. The gate drive automatically modifies the voltage function according to the working condition thereby accounting for the actual operating conditions. | 03-11-2010 |
20100079177 | SEMICONDUCTOR DEVICE - A light emitting device capable of performing signal electric current write-in operations at high speed and without dispersion in the characteristics of TFTs structuring pixels influencing the brightness of light emitting elements is provided. The gate length L of a transistor in which an electric current flows during write-in of a signal electric current is made shorter than the gate length L of a transistor in which electric current supplied to EL elements flows during light emission, and high speed write-in is thus performed by having a larger electric current flow than the electric current flowing in conventional EL elements. A converter and driver transistor ( | 04-01-2010 |
20100079178 | IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR - Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode. | 04-01-2010 |
20100097105 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a semiconductor layer stack | 04-22-2010 |
20100102856 | INVERTER CIRCUIT - A first switch (M | 04-29-2010 |
20100102857 | Switching circuit and driving circuit for transistor - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 04-29-2010 |
20100109717 | Pixel Circuit - A pixel circuit includes an LED having an anode that receives a driving current and a cathode that receives a scan signal, and a driving circuit including: a switch unit operable according to a voltage signal, and adapted for permitting transfer of a data signal when operating in an on state; a capacitor having a first end coupled to the switch unit, and a second end; a first transistor having a first terminal that is coupled to the second end of the capacitor, a second terminal that is coupled to the anode of the LED, and a control terminal that is coupled to the first end of the capacitor; and a second transistor having a first terminal that is adapted for coupling to the voltage source, a second terminal that is coupled to the first terminal of the first transistor, and a control terminal that is adapted for receiving a reference voltage. | 05-06-2010 |
20100109718 | Driving Circuit, and a Pixel Circuit Incorporating the Same - A driving circuit includes: a switch unit permitting transfer of a data signal when operating in an on state; a capacitor having a first end coupled to the switch unit, and a second end; a first transistor having a first terminal for coupling to a second voltage source, a second terminal coupled to the second end of the capacitor and to a load, and a control terminal coupled to the first end of the capacitor; and a second transistor having a first terminal coupled to the second end of the capacitor, a second terminal receiving a bias voltage, and a control terminal coupled to the first terminal of the second transistor. | 05-06-2010 |
20100123485 | Switch Driving Circuit And Switch Driving Method - Disclosed is a switch driving circuit for controlling the switching operation of a switch. The switch driving circuit includes a driver generating a normal gate signal for controlling the switching operation of the switch, and a gate signal correction circuit comparing the normal gate signal with a gate signal applied to a gate electrode of the switch so as to correct the gate signal in accordance with the comparison. | 05-20-2010 |
20100123486 | Driver for a Synchronous Rectifier and Power Converter Employing the Same - A driver for a switch, method of driving a switch, and a power converter employing the same. In one embodiment, the driver for the switch includes a first driver switch coupled to a terminal of the switch. The driver also includes a second driver switch inverted with respect to the first driver switch and coupled to another terminal of the switch, wherein the first and second driver switches are configured to provide a drive signal to a control terminal of the switch. | 05-20-2010 |
20100141304 | DRIVE CIRCUIT FOR POWER ELEMENT - A driving circuit ( | 06-10-2010 |
20100156475 | FIELD EFFECT TRANSISTOR WITH ELECTRIC FIELD AND SPACE-CHARGE CONTROL CONTACT - A group III nitride-based transistor capable of achieving terahertz-range cutoff and maximum frequencies of operation at relatively high drain voltages is provided. In an embodiment, two additional independently biased electrodes are used to control the electric field and space-charge close to the gate edges. | 06-24-2010 |
20100176850 | DEVICE FOR CONVERTING AN ELECTRIC CURRENT - A device for converting an electric current or for forming an electric voltage, Includes semiconductor modules connected in series and having at least one controllable power semiconductor, a high-voltage control unit lying at the potential of one of the semiconductor modules and a low-voltage control unit lying close to a ground potential and connected to the high-voltage control unit by at least one fiber-optic cable. The device is to be safe, low-maintenance and cost-effective and therefore the high-voltage control unit has a high-voltage interface lying at the potential of one of the semiconductor modules and connected to at least two controllable power semiconductors by signal lines and the high-voltage interface is connected to the low-voltage control unit by at least one of the fiber-optic cables. | 07-15-2010 |
20100194448 | Predriver and output driver circuit using the same - An output driver circuit includes a predriver control signal generation unit receiving a pull-up code signal, a pull-down code signal, a predriver selection signal and a read control signal and generating a pull-up control signal and a pull-down control signal; a predriver driven in response to the pull-up control signal and the pull-down control signal and receiving an internal data to drive a pull-up driving signal and a pull-down driving signal; and a driver receiving the pull-up driving signal and the pull-down driving signal and driving an output data outputted to a DQ pad, wherein the pull-up control signal and the pull-down control signal are enabled when the predriver is selected in a read operation period and a preset combination of the code signals is inputted. | 08-05-2010 |
20100194449 | Circuitry and Method for Reducing Second and Third-Order Nonlinearities - An electronic circuit ( | 08-05-2010 |
20100194450 | THIN-FILM TRANSISTOR CIRCUIT, DRIVING METHOD THEREOF, AND LIGHT-EMITTING DISPLAY APPARATUS - In a light-emitting display apparatus including a plurality of pixels each including a light-emitting element and a driving circuit of the light-emitting element, and the driving circuit includes a plurality of thin-film transistors connected in parallel, a threshold voltage of the thin-film transistor reversibly changes according to a voltage applied between a gate and a source or between the gate and a drain of each of the thin-film transistors, by selecting and switching the plurality of thin-film transistors TFT | 08-05-2010 |
20100194451 | METHOD OF CONTROLLING AN IGBT AND A GATE DRIVER - A method is disclosed for controlling an IGBT component and a gate driver. An exemplary method includes producing, with two separate driver circuits, a gate voltage for controlling the IGBT component, the outputs of the driver circuits being connected to free ends of a series connection of resistive components. A location, such as a midpoint between the series connection, forms the gate voltage. | 08-05-2010 |
20100201406 | Temperature and Supply Independent CMOS Current Source - An improved current source may provide an improvement over a typical ΔV | 08-12-2010 |
20100213987 | SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD FOR THE SAME - A semiconductor device includes an element to be protected formed on a semiconductor substrate, a first protection transistor, and a second protection transistor. The first protection transistor is formed on a first well of a first conductivity type formed in an upper portion of a deep well of a second conductivity type. The second protection transistor is formed on a second well of the second conductivity type. A second source/drain diffusion layer is electrically connected with a third source/drain diffusion layer and at the same potential as the first well. A fourth source/drain diffusion layer is electrically connected with a second diffusion layer and at the same potential as the second well and the second diffusion layer. | 08-26-2010 |
20100213988 | DRIVING CIRCUIT OF SWITCH DEVICE - The present invention relates to a driving circuit of switch device. The present invention employs transformer isolated driving. The number of said transformers is two. The primary sides of the two transformers are connected to two driving modulators, respectively. The input terminal of a high frequency carrier signal and the input terminal of a driving signal are connected to the input terminal of a first driving modulator. The input terminal of a driving signal being connected with an inverter together with the input terminal of the high frequency carrier signal are connected to the input terminal of a second driving modulator. The first secondary side of the first transformer is connected to a power supply circuit which may provide a necessary voltage for turning on the switch device during a high level period of the driving signal. The first secondary side of a second transformer is connected to a voltage discharging circuit which may discharge a turn-on voltage of the switch device into a low level during a low level period of the driving signal. Therefore, the pair transistor amplification circuit in the existing transformer isolated driving becomes unnecessary, which provides a high driving power. In addition, employing no optical coupler isolated element makes the working life even longer. | 08-26-2010 |
20100213989 | GATE DRIVING CIRCUIT - To obtain a gate driving circuit in which rising of a constant current of a constant current circuit is fast and power saving is achieved, the gate driving circuit includes: a constant current driving circuit ( | 08-26-2010 |
20100213990 | HIGH FREQUENCY POWER SWITCHING CIRCUIT WITH ADJUSTABLE DRIVE CURRENT - A MOSFET pre-driver circuit with highly adjustable drive current for a high frequency switching power MOSFET circuit decreases the peak of the drive current and power loss of the pre-driver while maintaining power loss of the power stage so that total power loss is decreased and circuit efficiency is increased. A resistor arranged in series with a source of the MOSFET of the pre-driver circuit is provided to adjust the drive current. | 08-26-2010 |
20100225363 | Integrated Circuit for Driving Semiconductor Device and Power Converter - An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit | 09-09-2010 |
20100225364 | Stacked semiconductor devices and signal distribution methods thereof - A stacked semiconductor device includes a plurality of stacked chips, each having a plurality of elements to receive a signal. At least one first ladder main signal line for receiving the signal is arranged to pass through the chips. At least one second ladder main signal line is arranged to pass through the chips. A plurality of ladder buffers buffer the signal applied from the first ladder main signal line to the second ladder main signal line. The signal is uniformly distributed to the stacked chips using a ladder type circuit network technique. | 09-09-2010 |
20100231269 | DRIVE CIRCUIT FOR SEMICONDUCTOR ELEMENT - A drive circuit wherein any abnormality of a semiconductor element is prevented from being erroneously sensed in a case where a gate “ON” command has entered in a state in which a gate voltage of the semiconductor element has not lowered fully. A detection process for a controlled variable of the semiconductor element is permitted only within a period which corresponds to a controlled variable of the semiconductor element at the time when an “ON” signal has been inputted to a control circuit, and a detected controlled variable which is detected within the period and a comparison controlled variable which is set in correspondence with the controlled variable are compared so as to output an abnormality signal, whereby the semiconductor element is turn-off at a speed lower than in normal turn-off. | 09-16-2010 |
20100231270 | SWITCHING OUTPUT CIRCUIT - A high-side transistor and a low-side transistor each has gate electrodes configured so as to allow signals to be input and output via a driving contact and a detection contact provided at different positions. When a control signal is at a first level and a signal output from the detection contact on the low-side transistor side is at a low level, the high-side driver applies a low-level signal to the driving contact on the high-side transistor side. When the control signal is at a second level and a signal output from the detection contact on the high-side transistor side is at a high level, the low-side driver applies a high-level signal to the driving contact on the low-side transistor side. | 09-16-2010 |
20100237911 | Drive Circuit For A Power Switch Component - A drive circuit for a power switch component. | 09-23-2010 |
20100244907 | LOW SPEED, LOAD INDEPENDENT, SLEW RATE CONTROLLED OUTPUT BUFFER WITH NO DC POWER CONSUMPTION - An output buffer utilizes capacitive feedback to control the output slew rate largely independent of load capacitance. The invention slows the rising and falling slew rates and via a capacitance feedback reduces the effect of load capacitance on slew rate, and uses no DC current. Transistor switches are employed to isolate and reduce noise and interaction among the circuit components and functions. | 09-30-2010 |
20100244908 | Semiconductor device having a complementary field effect transistor - A semiconductor device prevents the ON current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a buffer circuit that generates a power-supply voltage of a CMOS; a first replica transistor that is a replica of a p-channel MOS transistor forming the CMOS, and is diode-connected; a second replica transistor that is a replica of an n-channel MOS transistor forming the CMOS, and is diode-connected; and a voltage controller that controls the voltage between the anode and cathode of the replica transistors so that the current value of the current flowing into the replica transistor becomes equal to a given target value. In this semiconductor device, the buffer circuit generates the power-supply voltage, with the target voltage being a voltage that is controlled by the voltage controller. | 09-30-2010 |
20100244909 | LOW-SPEED DRIVER CIRCUIT - A driver circuit includes an output transistor circuit that includes a first transistor of a first conductivity type and a second transistor of a second conductivity type disposed between a supply voltage source and a reference voltage source, and that outputs an output signal from a connection node between the first transistor and the second transistor, a first pre-buffer circuit that drives a gate of the first transistor in response to an input signal, and a second pre-buffer circuit that drives a gate of the second transistor in response to the input signal. | 09-30-2010 |
20100253395 | TRANSISTOR Gate Driver for Short Circuit Protection - Particular embodiments generally relate to driver structures. In one embodiment, an apparatus includes a first driver that drives a first current for a transistor. The first driver drives the first current during a first portion of a drive time of driving the transistor. The first driver is OFF during a second portion. A second driver drives a second current for the transistor during the second portion. | 10-07-2010 |
20100253396 | APPARATUS AND METHOD FOR CONTROLLING A COMMON-MODE VOLTAGE OF SWITCHING AMPLIFIERS - The present invention relates to an H-bridge controller and method for controlling a common-mode voltage and/or current of an H-bridge circuit. The H-bridge controller comprises a section for receiving a signal indicating at least one of a common-mode voltage and common-mode current of the H-bridge circuit, and a section for generating control signals which determine switching of the H-bridge circuit so as to control at least one of the common-mode voltage and common-mode current of the H-bridge circuit. | 10-07-2010 |
20100264957 | OUTPUT CIRCUIT - An output circuit includes: an NMOS transistor of an output buffer, a transistor ON drive circuit configured to turn on the transistor; a switchable current source configured to turn off the transistor; and a drive control circuit configured to control the transistor ON drive circuit and the switchable current source. The electric charge at the gate terminal of the NMOS transistor of the output buffer is pulled out with the current of the switchable current source at a fixed current value even when the gate voltage of the transistor varies in a range of variations of the threshold voltage Vth of the transistor. | 10-21-2010 |
20100264958 | OUTPUT CIRCUIT AND MULTI-OUTPUT CIRCUIT - An output circuit includes a high-side transistor, a low-side transistor, a gate protection circuit, a level shift circuit, and a pre-driver circuit. The level shift circuit interrupts a current path from an output terminal to the level shift circuit after a predetermined time has passed since the high-side transistor was switched OFF. | 10-21-2010 |
20100271081 | GATE DRIVE CIRCUITRY FOR NON-ISOLATED GATE SEMICONDUCTOR DEVICES - One embodiment is a gate drive circuitry for switching a semiconductor device having a non-isolated input, the gate drive circuitry having a first circuitry configured to turn-on the semiconductor device by imposing a current on a gate of the semiconductor device so as to forward bias an inherent parasitic diode of the semiconductor device. There is a second circuitry configured to turn-off the semiconductor device by imposing a current on the gate of the semiconductor device so as to reverse bias the parasitic diode of the semiconductor device wherein the first circuitry and the second circuitry are coupled to the semiconductor device respectively through a first switch and a second switch. | 10-28-2010 |
20100283514 | POWER SUPPLY DEVICE AND METHOD FOR DRIVING THE SAME - In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel. | 11-11-2010 |
20100283515 | GATE DRIVER FOR ENHANCEMENT-MODE AND DEPLETION-MODE WIDE BANDGAP SEMICONDUCTOR JFETS - A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET. | 11-11-2010 |
20100289535 | INTEGRATED GATE DRIVER CIRCUIT - An integrated gate driver circuit includes an output drive circuit and a voltage stabilizing circuit. The voltage stabilizing circuit is configured to stabilize an output voltage outputted by the output drive circuit thereby reducing the ripple of the output voltage. | 11-18-2010 |
20100301905 | Output circuit having pre-emphasis function - An output circuit includes a first differential pair of transistors driven by a first current source and differentially receiving input signals and a second differential pair of transistors driven by a second current source and differentially receiving first control signals (EMT, EMB). Output pairs of the first and second differential pairs are connected to the differential output terminals. A load resistor element pair is connected between a power supply and the differential output terminals. The output circuit further includes a third differential pair of transistors driven by a third current source and differentially receiving second control signals and a fourth differential pair of transistors driven by a fourth current source and differentially receiving third control signals. An output pair of the third differential pair of transistors is connected between one of the differential output terminals and the power supply. An output pair of the fourth differential pair of transistors is connected between the power supply and the other of the differential output terminals. | 12-02-2010 |
20100308873 | SWITCHING DEVICE DRIVING APPARATUS - An IGBT drive circuit is provided with a series regulator and a drive circuit. The series regulator includes a transistor and a control circuit. The control circuit and the drive circuit are integrated as an IC. The transistor is connected to the IC as an external component. Since the control circuit and the drive circuit are integrated, the number of components necessary for the IGBT drive circuit can be reduced. Further, the transistor is excluded from the IC so that radiant heat by the IC can be suppressed whereby an IC package having high heat-radiation characteristics is not necessarily used so that increasing size of the IC is avoided. | 12-09-2010 |
20100321070 | SWITCHING ELEMENT DRIVING CIRCUIT AND CONVERTER - A driving circuit in which, during an on-period of a switching element, a voltage applied to the switching element is stored, and during an off-period of the switching element, the stored voltage is supplied to turn off the switching element. | 12-23-2010 |
20100327919 | DIFFERENTIAL AMPLIFIER CIRCUIT - A differential amplifier main circuit amplifies, while first voltage is applied to drains of first and second transistors via a load circuit and second voltage is applied to source of third transistor, a difference between voltages applied to gates of the first and second transistors, and outputs it from a connection between the load circuit and drains of the first or second transistor. A voltage application circuit applies voltage to the gate of the third transistor so that a current between the source and drain thereof to have a predetermined magnitude. Gates of transistors of the application circuit are connected to a second common-connection of drains thereof to which the first voltage is applied via a load, the second voltage is applied to a first common-connection of sources of the transistors, and a connection of the second common-connection and the load is connected to the gate of the third transistor. | 12-30-2010 |
20110006814 | POWER STAGE - An power stage has a differential output stage | 01-13-2011 |
20110012646 | BUS LOW VOLTAGE DIFFERENTIAL SIGNALING (BLVDS) CIRCUIT - A differential signaling circuit and a control circuit. The differential signaling circuit includes a first positive driver and a first negative driver. The first negative driver has different impedance than the first positive driver. The first positive driver and the first negative driver together define a first current path between positive and negative power supply terminals. A first output is defined on the first current path intermediate the first positive driver and the first negative driver. The control circuit includes a first driver that drives a transmission line at a first output voltage, a feedback amplifier responsive to the first output voltage to generate a control signal and a metal oxide semiconductor (MOS) driver coupled to the first driver and responsive to the control signal to make impedance of the first driver equivalent to impedance of the transmission line. | 01-20-2011 |
20110018592 | Electric Circuit - As for a transistor, overlapped are factors such as a variation of a gate insulation film which occurs due to a difference of a manufacturing process and a substrate used and a variation of a crystalline state in a channel forming region and thereby, there occurs a variation of a threshold voltage and mobility of a transistor. | 01-27-2011 |
20110018593 | MOSFET gate drive with reduced power loss - A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred to charge and discharge the gate of the MOSFET is thereby reduced, and the efficiency of the MOSFET is improved. A trimming process is used to adjust the magnitude of the voltage supplied by the gate driver to the gate of the power MOSFET in the low-current condition. | 01-27-2011 |
20110037503 | Buffer-driving circuit capable of increasing responding speed and prolonging lifespan, buffer, and method thereof - A method for increasing responding speed and lifespan of a buffer includes detecting an edge of an input signal of the buffer, triggering a pulse signal with a predetermined period according to the detected edge, and driving the buffer for generating an output signal according to the pulse signal and the input signal. | 02-17-2011 |
20110050292 | CORELESS PRINTED-CIRCUIT-BOARD (PCB) TRANSFORMERS AND OPERATING TECHNIQUES THEREFOR - Optimal operating techniques are disclosed for using coreless printed-circuit-board (PCB) transformers under (1) minimum input power conditions and (2) maximum energy efficiency conditions. The coreless PCB transformers should be operated at or near the ‘maximum impedance frequency’ (MIF) in order to reduce input power requirement. For maximum energy efficiency, the transformers should be at or near the “maximum efficiency frequency” (MEF) which is below the MIF. The operating principle has been confirmed by measurement and simulation. The proposed operating techniques can be applied to coreless PCB transformers in many circuits that have to meet stringent height requirements, for example to isolate the gates of power MOSFET and IGBT devices from the input power supply. | 03-03-2011 |
20110068832 | DRIVING CIRCUIT FOR POWER MOSFET - A driving circuit for a power MOSFET includes a first switch, a second switch, a third switch and a fourth switch. The first switch is connected to a first node, a second node and a first power end. The first power end supplies a first voltage. The second switch is connected to the first node, the second node and a first ground end. The third switch is connected to the second node, a third node and the first power end. The fourth switch is connected to the second node, the third node and a second ground end. The power MOSFET is connected to the third node and a PWM signal is inputted into the first node. The PWM signal has a second voltage lower than the first voltage. | 03-24-2011 |
20110068833 | Dynamic Switch Driver for Low-Distortion Programmable-Gain Amplifier - A switching circuit for switching a time-varying input signal, the switching circuit comprising: at least one switch including a N-channel MOSFET and a P-channel MOSFET, each having a gate configured to receive a drive signal to change the ON/OFF state of the switch; and a drive circuit configured and arranged so as to selectively apply a pair of drive signals to change the ON/OFF state of the switch, the drive circuit being configured and arranged to generate the drive signals as a function of (a) a pair DC signal components sufficient to change the ON/OFF state of the switch and (b) a pair of time-varying signal components as at least a partial replica of the signal present on the source terminal of each MOSFET so that when applied with the DC signals to the gates of the n-channel MOSFET and p-channel MOSFET respectively, the drive signals will be at the appropriate level to maintain the ON/OFF state of the switch and keep the gate-source voltages of each MOSFET within the gate-source breakdown limit of the MOSFETs. | 03-24-2011 |
20110080192 | DRIVE CIRCUIT FOR SWITCHING DEVICE - The threshold value for a normally-off junction FET is a low value. Accordingly, in a semiconductor driver circuit using the normally-off junction FET, there have existed such problems as high-accuracy voltage control, high-speed charging into an input capacitor, and misoperations. A semiconductor driver circuit which is the most suitable for the normally-off junction FET is proposed by applying the high-accuracy gate-voltage generation scheme based on a Zener diode, a reduction in the turn-on loss based on a speed-up capacitor, the connection of an inter-gate-source capacitor, and a misoperation-preventing circuit based on the source-terminal optimum implementation scheme. | 04-07-2011 |
20110109351 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined. | 05-12-2011 |
20110133790 | DEVICE FOR DRIVING SWITCHING ELEMENTS - A drive unit controls the operation of a corresponding power switching element such as IGBT which forms an inverter and a converter. The drive unit controls the operation of the corresponding power switching element to supply an operation current to a motor generator. First and second switching elements in the drive unit are simultaneously turned on when an operation signal transferred from a control device is switched to a turning-on instruction operation signal. The voltage at the gate terminal of the power switching element is shifted to a divided voltage obtained by dividing a voltage of the power source by first and second resistances connected in series in the drive unit. When a mirror time period of the power switching element is elapsed, the second switching element only is turned off in order to shift the gate voltage of the power switching element to the voltage of the power source. | 06-09-2011 |
20110133791 | OUTPUT BUFFER CIRCUIT, INPUT BUFFER CIRCUIT, AND INPUT/OUTPUT BUFFER CIRCUIT - An output buffer circuit in accordance with an embodiment comprises a plurality of buffer circuits, each of the buffer circuits including a transistor operative to change an output signal of an output terminal in response to a change in an input signal, the output buffer circuit being configured to enable the plurality of buffer circuits to be driven selectively. Each of the plurality of buffer circuits includes a plurality of output transistors having respective current paths formed in parallel to one another between a fixed voltage terminal supplying a certain fixed voltage and an output terminal, and being selectively rendered in an operable state in accordance with a control signal provided from external. The plurality of output transistors included in each of the plurality of buffer circuits are formed having a certain size ratio. | 06-09-2011 |
20110133792 | BUFFER CIRCUIT - A buffer circuit in accordance with an embodiment comprises output transistors connected between a first fixed voltage terminal and an output terminal, and gate control transistors connected between a second fixed voltage terminal and a gate of one of the output transistors or between two of gates of the output transistors. The output transistors are configured to turn on to change a voltage of the output terminal. The gate control transistors are configured to apply a gate voltage to the gates of the output transistors. A gate of each of the gate control transistors is applied with a certain voltage, such that when a source of each of the gate control transistors changes from a first potential to a second potential, a potential difference between the gate and the source attains a threshold voltage or greater, whereby each of the gate control transistors is turned on. | 06-09-2011 |
20110140744 | FLEXIBLE ELECTRONIC CIRCUITS AND DISPLAYS - A backplane for use in an electro-optic display comprises a patterned metal foil having a plurality of apertures extending therethrough, coated on at least side with an insulating polymeric material and having a plurality of thin film electronic devices provided on the insulating polymeric material. | 06-16-2011 |
20110148475 | DRIVING CIRCUIT OF INPUT/OUTPUT INTERFACE - A driving circuit of an input/output (I/O) interface is provided. The driving circuit includes a main output stage and an enhancing unit. The main output stage receives at least one driving signal and outputs an output signal corresponding to an input signal accordingly. The enhancing unit is coupled to the main output stage. The enhancing unit receives and detects the level of the output signal so as to drive the output force of the main output stage in a first output level or a second output level, wherein the first output level is higher than the second output level. | 06-23-2011 |
20110148476 | Overload Protection for a Circuit Arrangement Having a Transistor - A drive circuit for a transistor and a method for driving a transistor are described. | 06-23-2011 |
20110148477 | SIGNAL TRANSMISSION DEVICE - A signal transmission device includes a transmitting circuit | 06-23-2011 |
20110156765 | DATA OUTPUT CIRCUIT PROVIDED WITH OUTPUT DRIVER - Provided is a data output circuit having an output driver that outputs accurate data voltages while preventing unwanted current leakage through switching CMOS transistors. The data output circuit includes a pre-driver, an output driver and a high resistance resistor. The pre-driver is configured to pre-drive a data pulse. The output driver is configured to receive the output signal of the pre-driver. The high resistance resistor is configured to adjust the output signal of the pre-drive so that a slope of the output signal is gradual r and to provide the smoothed output signal to the output driver. The high resistance resistor is a gate resistor of a MOS transistor of the output driver. | 06-30-2011 |
20110169534 | MEMORY BANK SIGNAL COUPLING BUFFER AND METHOD - A memory array contains a plurality of banks coupled to each other by a plurality of data lines. Each of the data lines is divided into a plurality of segments within the array. Respective bidirectional buffers couple read data from one of the segments to another in a first direction, and to couple write data from one of the segments to another in a second direction that is opposite the first direction. The data lines may be local data read/write lines that couple different banks of memory cells to each other and to respective data terminals, digit lines that couple memory cells in a respective column to respective sense amplifiers, word lines that activate memory cells in a respective row, or some other signal line within the array. The memory array also includes precharge circuits for precharging the segments of respective data lines to a precharge voltage. | 07-14-2011 |
20110175649 | DRIVER CIRCUIT FOR HIGH VOLTAGE DIFFERENTIAL SIGNALING - Driver circuit for high voltage differential signaling. The circuit includes a first positive driver that generates a first positive transition at a first output in response to an input. The circuit also includes a first current element coupled to the first positive driver to enable generation of a current. Further, the circuit includes a first negative driver coupled to the first current element, and responsive to the input and the current, due to the first current element, to generate a first negative transition, at a second output, at a rate similar to that of the first positive transition. | 07-21-2011 |
20110175650 | DRIVER CIRCUIT AND METHOD FOR REDUCING ELECTROMAGNETIC INTERFERENCE - An apparatus and a method switch a load through a power transistor. The apparatus includes: a first current generator for generating a current to charge a capacitance of a control terminal of the power transistor during power on of the power transistor; a second current generator for generating a current to discharge the capacitance during power off of the power transistor. The apparatus is equipped with control circuitry having a storage element for storing a voltage value representative of the potential difference between the control terminal and a conduction terminal of the power transistor when the power transistor operates in the saturation region and a discharge circuit for generating an additional current to discharge the capacitance during the power-off process. The additional current is a function of the potential difference of the control terminal and the stored voltage value from the conduction terminal. | 07-21-2011 |
20110181323 | METHOD FOR GENERATING A SIGNAL REPRESENTATIVE OF THE CURRENT DELIVERED TO A LOAD BY A POWER DEVICE AND RELATIVE POWER DEVICE - An integrated power transistor includes emitter or source regions, and a comb-like patterned metal electrode structure interconnecting the emitter or source regions and defining at least one connection pad. The comb-like patterned metal electrode structure includes a plurality of fingers. A current sensing resistor produces a voltage drop representative of a current delivered to a load by the integrated power transistor. The current sensing resistor includes a portion of a current carrying metal track having a known resistance value and extending between one of the fingers and a connectable point along the current carrying metal track. | 07-28-2011 |
20110181324 | SELF-ADJUSTING GATE BIAS NETWORK FOR FIELD EFFECT TRANSISTORS - The present invention is directed to a self-adjusting gate bias network for field effect transistors in radio frequency applications. A bias network for field effect transistors is provided comprising a field effect transistor having a source electrode connected to ground and a drain electrode connected to a load; a radio frequency network connected to the gate electrode; a gate bias network connected to the gate electrode; wherein a device having a non-linear characteristic is provided in series between the gate electrode and the gate bias network such that a forward bias current at the gate electrode of the field effect transistor is reduced or prevented. | 07-28-2011 |
20110187416 | SMART DRIVER FOR FLYBACK CONVERTERS - The present invention discloses a smart driver used in flyback converters adopting a transconductance amplifier to turn on a synchronous rectifier FET, and a comparator to quickly turn off the synchronous rectifier FET. | 08-04-2011 |
20110187417 | RADIO FREQUENCY SWITCH CIRCUIT - A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors. | 08-04-2011 |
20110199130 | LOW-POWER HIGH-SPEED DIFFERENTIAL DRIVER WITH PRECISION CURRENT STEERING - In bipolar CMOS or BiCMOS process technologies, drivers (such as mixed mode or hybrid mode drivers) using both bipolar and CMOS transistors (i.e., field effect transistors or FETs) may have undesirable properties, such as reduced speed, ringing, latch-up, or lower electrostatic discharge (ESD) performance. Here, a mixed or hybrid mode driver is provided that employs a current steering circuit (instead of voltages driven differential pair(s) as is done with conventional drivers) to generate pull-down currents that precisely match the voltages in the pull-up portions of driver. It increases the speed and produces smaller output common-mode voltage fluctuation over conventional drivers. Thus, the driver provided here can be produced in BiCMOS process technologies without the undesirable effects of conventional drivers. | 08-18-2011 |
20110199131 | BUS DRIVER CIRCUIT - A bus driver circuit for driving a bus voltage is provided. The bus driver circuit comprises: a bus line output (CANL) the bus voltage of which is driven by the bus driver circuit; a first transistor (M | 08-18-2011 |
20110204928 | DISPLAY DEVICE, SEMICONDUCTOR DEVICE, AND DRIVING METHOD THEREOF - An object is to provide a semiconductor device with improved operation. The semiconductor device includes a first transistor, and a second transistor electrically connected to a gate of the first transistor. A first terminal of the first transistor is electrically connected to a first line. A second terminal of the first transistor is electrically connected to a second line. The gate of the first transistor is electrically connected to a first terminal or a second terminal of the second transistor. | 08-25-2011 |
20110204929 | DRIVE CIRCUIT OF POWER SEMICONDUCTOR DEVICE - In order to obtain a drive circuit of a power semiconductor device capable of making a fast response to a voltage fluctuation dV/dt and preventing a malfunction of the power semiconductor device while suppressing power consumption with a simple circuit configuration, a control circuit controlling ON and OFF switching of the power semiconductor device, a DC power supply supplying a voltage between control terminals of the power semiconductor device, and a switching element connected between the control terminals of the power semiconductor device are provided. The switching element turns ON in a case where a power supply voltage of the DC power supply drops or in a case where the voltage between the control terminals of the power supply device increases in a state where the power supply voltage of the DC power supply has dropped, and thereby causes a short-circuit between the control terminals of the power semiconductor device. | 08-25-2011 |
20110210765 | RECONFIGURABLE SEMICONDUCTOR DEVICE - A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer. | 09-01-2011 |
20110210766 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 09-01-2011 |
20110215840 | GATE DRIVE CIRCUIT - A switch device comprised of a wide band gap semiconductor is provided. The switch device comprises a drain, a source, a gate and a gate voltage clamp circuit, which is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, and which comprises a diode and a voltage limiter circuit provided between the drain and the gate. | 09-08-2011 |
20110221480 | DRIVE CIRCUIT - A resonant gate drive circuits for a voltage controlled transistor according to the embodiments are characterized by connecting a resonant inductor and a resistor to a gate of the voltage controlled transistor or a gate of the normally-on voltage controlled transistor or a voltage control terminal of a pseudo normally-off element, in series, and providing the drive circuit with two complementary switching elements connected in series. | 09-15-2011 |
20110221481 | GATE DRIVE CIRCUIT - Provided is a gate drive circuit capable of turning off a MOS-FET reliably without adding a complicated structure. The gate drive circuit for driving a power MOS-FET includes: a first switching element connected to a gate terminal of the power MOS-FET through a first resistor, for setting a gate potential of the power MOS-FET to a potential for turning on the power MOS-FET, based on a signal from a signal source; and a second switching element connected to the gate terminal of the power MOS-FET through a second resistor, for setting the gate potential of the power MOS-FET to a potential for turning off the power MOS-FET, based on the signal from the signal source, in which the first resistor has a resistance value set to a value larger than a resistance value of the second resistor. | 09-15-2011 |
20110221482 | Semiconductor device - Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage. | 09-15-2011 |
20110234263 | DRIVER AND OUTPUT BUFFER CIRCUIT - A driver circuit transmits a signal generated by a signal level generation circuit to a circuit to be measured by transmitting the signal to a output buffer circuit via a circuit (prebuffer circuit) that drives the output buffer circuit and causing the output buffer circuit to drive a transmission line. The driver circuit includes the prebuffer circuit and a replica buffer circuit formed by imitating the prebuffer circuit. The prebuffer circuit and the replica buffer circuit are disposed in parallel. The driver circuit temporarily increases input bias current to be supplied to output-stage transistors of the output buffer circuit on the basis of output current of the replica buffer circuit during transition of an input or output signal. | 09-29-2011 |
20110241737 | POWER SUPPLY CIRCUIT FOR CPU - A power supply circuit is configured for supplying power to a central processing unit (CPU). The power supply circuit includes a pulse-width modulation (PWM) controller, a driving integrated circuit (IC), a first transistor, a second transistor, and a voltage regulator. The PWM controller is capable of outputting a PWM signal to regulate a voltage supplied to the CPU. The driving IC is connected to the PWM controller and capable of outputting a first driving signal and a second driving signal according to the PWM signal. The first transistor is connected to the driving IC and controlled by the first driving signal. The second transistor is connected to the driving IC and controlled by the second driving signal. The voltage regulator is capable of regulating a voltage of a power source to an optimized voltage and supplies the driving IC with the optimized voltage. | 10-06-2011 |
20110241738 | SWITCHING DEVICE DRIVING UNIT AND SEMICONDUCTOR APPARATUS - In order to provide a switching device driving unit that, even in a case where a threshold voltage of a switching device is varied, can suppress variations in switching speed, and prevent a power loss caused by an unnecessary gate current in a constant ON operation state of the switching device, so that a desired slew rate can be easily set, a control current source circuit sets to different values based on a first input driving signal, in a driving current to be source-outputted to a gate or a base of the switching device, a current in a stage of an initial ON operation of a switching operation of the switching device and a current in a stage after completion of the switching operation. | 10-06-2011 |
20110248750 | HIGH-BANDWIDTH ON-CHIP COMMUNICATION - Some embodiments of the present invention provide techniques and systems for high-bandwidth on-chip communication. During operation, the system receives an input voltage signal which is to be transmitted over a wire in a chip. The system then generates one or more modified voltage signals from the input voltage signal. Next, the system drives each of the voltage signals (i.e., the input voltage signal and the one or more modified voltage signals) through a respective capacitor. The system then combines the output signals from the capacitors to obtain a combined voltage signal. Next, the system transmits the combined voltage signal over the wire. The transmitted signals can then be received by a hysteresis receiver which is coupled to the wire through a coupling capacitor. | 10-13-2011 |
20110248751 | SLEW DETECTION FOR HIGH VOLTAGE ISOLATION REGION - A system includes control circuitry configured to provide one or more control pulses in response to a command signal, the one or more control pulses being communicated from the control circuitry to associated circuitry via a connection. A detector is configured to detect a disturbing signal that mitigates reception of the one or more control pulses via the connection. The command signal is controlled to cause the control circuitry to provide one or more additional control pulses when the disturbing signal is detected by the detector to improve a likelihood of the reception of the one or more control pulses via the connection. | 10-13-2011 |
20110260758 | HALF-POWER BUFFER AMPLIFIER - A half-power buffer amplifier is disclosed. A buffer stage includes a first-half buffer stage and a second-half buffer stage, wherein an output of the first-half buffer stage is controllably fed back to a rail-to-rail differential amplifier, and an output of the second-half buffer stage is controllably fed back to the rail-to-rail differential amplifier. The switch network controls the connection between the outputs of the buffer stage and an output node of the half-power buffer amplifier in a manner such that a same pixel, with respect to different frames, of a display panel is driven by the same rail-to-rail differential amplifier. In one embodiment, the rail-to-rail differential amplifier and the buffer stage comprise half-power transistors operated within and powered by half of a full range spanning from power to ground. | 10-27-2011 |
20110273206 | SWITCHING GATE DRIVER - Disclosed is a switching gate driver of an IGBT device, including a resistor unit to control a gate current of the IGBT device; and a voltage reader that outputs a control signal to control a variable resistor unit of the resistor unit to the resistor unit, according to a collector-emitter voltage of the IGBT device. | 11-10-2011 |
20110273207 | JUNCTION GATE DRIVER - A junction device driver is provided that includes a current regulator, an inductor coupled with the current regulator, and a switching module coupled with the inductor. The current regulator is configured to generate a current, and the inductor is configured to store energy generated by the current produced by the current regulator. The switching module is configured to control a conduction current for a gate of a junction device. The conduction current is generated, initially, from the stored energy of the inductor to thereby provide a relatively high initial current. As the energy stored in the inductor is discharged, the current level drops to a lower level that is sufficient to maintain the junction device in an “on” state. | 11-10-2011 |
20110273208 | JUNCTION GATE DRIVER WITH TAPPED INDUCTOR CURRENT SOURCE - A junction device driver is provided that includes a current regulator, an inductor coupled with the current regulator, and a switching module coupled with the inductor. The current regulator is configured to generate a current, and the inductor is configured to store energy generated by the current produced by the current regulator. The switching module is configured to control a conduction current for a gate of a junction device. The conduction current is generated, initially, from the stored energy of the inductor to thereby provide a relatively high initial current. As the energy stored in the inductor is discharged, the current level drops to a lower level that is sufficient to maintain the junction device in an “on” state. | 11-10-2011 |
20110279151 | BUFFER AND DRIVING METHOD OF THE SAME - A buffer and a driving method thereof are provided. The buffer includes a first transistor for transmitting a first power source voltage to an output terminal according to an input voltage, a second transistor for transmitting an inverted voltage of the input voltage to the output terminal, a capacitor including a first terminal coupled to a gate of the second transistor and a second terminal configured to be input with a first level voltage or a second level voltage according to the input voltage, and a third transistor for transmitting a second power source voltage to the gate of the second transistor according to the input voltage. | 11-17-2011 |
20110285426 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - An object is to reduce power consumption of a semiconductor device including a DC-DC converter circuit. The semiconductor device includes a DC-DC converter circuit and a microprocessor. The DC-DC converter circuit includes a conversion circuit including an inductor and a transistor, and a control circuit including a comparison circuit and a logic circuit. In the control circuit, the comparison circuit compares an output of the conversion circuit and a reference value, and the logic circuit performs an arithmetic operation between an output of the comparison circuit and a clock signal of the microprocessor. In the conversion circuit, the transistor controls a current flowing through the inductor in accordance with an output of the logic circuit, and the output of the conversion circuit is generated in accordance with the current flowing through the inductor. | 11-24-2011 |
20110285427 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate having a first semiconductor layer and a second semiconductor layer formed on a first surface; a diode having a first electrode and a second electrode; a control pad; a control electrode electrically coupled with the control pad; and an insulation member. The first electrode is formed on a second surface of the first semiconductor layer. The second electrode is formed on the first surface. Current flows between the first electrode and the second electrode. The control pad is arranged on the first surface so that the pad inputs a control signal for controlling an injection amount of a carrier into the first semiconductor layer. The insulation member insulates between the control electrode and the second electrode and between the control electrode and the semiconductor substrate. | 11-24-2011 |
20110304362 | CURRENT-SOURCE CIRCUIT - A current-source circuit includes a plurality of input-side transistors; a plurality of output-side transistors current-mirror-coupled to the plurality of input-side transistors; an output terminal from which an output current is output; and a switching control circuit to switch the plurality of input-side transistors and activate at least one of the plurality of input-side transistors sequentially. | 12-15-2011 |
20110304363 | Input/Output Driver with Controlled Transistor Voltages - In an embodiment, an integrated circuit comprises core circuitry and at least one driver circuit. The core circuitry is powered by a first supply voltage during use, and comprises a control circuit configured to generate a pull up control signal, a pull down control signal, and at least one reference voltage. The driver circuit is powered by a second supply voltage during use, the second supply voltage having a greater magnitude than the first supply voltage. The driver circuit is connected to a pad to be connected to a pin on a package of the integrated circuit. The driver circuit comprises a cascode connection of a first transistor and a second transistor, and a capacitor coupled between a first gate terminal of the first transistor and a second gate terminal of the second transistor. The first gate terminal is coupled to receive the pull down control signal. | 12-15-2011 |
20120001663 | MIXED-MODE INPUT BUFFER - An input buffer with a reduced sensitivity to an externally generated reference voltage includes: a first input coupled between a first load and ground, the first input being an externally generated reference voltage; a second input coupled between a second load and ground, for generating an output; and a third input coupled in parallel to the first input, the third input being an internally generated reference voltage. The output switches between high and low or vice versa when the second input exceeds a switching point which is an average of the first input and the third input according to the relative size of the first input and the third input. | 01-05-2012 |
20120007636 | ANALOG SWITCH FOR SIGNAL SWINGING BETWEEN POSITIVE AND NEGATIVE VOLTAGES - An analog signal is input to an input terminal. An analog signal is output via an output terminal. A first transistor is an N-channel MOSFET, and is provided between the input terminal and the output terminal. A first resistor is provided between the gate of the first transistor and a first fixed voltage terminal (power supply terminal), which sets the gate of the first transistor to a high-impedance state. | 01-12-2012 |
20120013369 | Synchronous Rectifier Gate Drive Timing To Compensate For Transformer Leakage Inductance - An apparatus for providing synchronous rectifier gate drive timing is described. The apparatus includes circuitry to receive a first signal. The apparatus also includes circuitry to generate a second signal by modifying the first signal to delay a transition from high to low for a non-zero overlap duration. An output to apply an inverse of the first signal as a gate drive timing of at least a first transistor and to apply the second signal as a gate drive timing of at least a second transistor, where the first transistor is a part of a primary side of a full-bridge synchronous rectifier and the second transistor is a part of a secondary side of the full-bridge synchronous rectifier is also included. The second signal and the inverse of the first signal are high during the overlap duration. Methods and program storage devices are also disclosed. | 01-19-2012 |
20120013370 | GATE DRIVING CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT - A gate driving circuit for driving a power semiconductor element can include a MSINK that is an n-channel metal-oxide silicon field-effect transistor (MOSFET) with a low resistance value for rapidly drawing out the charges accumulated on the gate of an insulated gate bipolar transistor (IGBT), and a MSOFT that is an n-channel MOSFET with a high resistance value for slowly drawing out the charges. By shifting the time for turning ON of these MOSFETs, soft interruption can be performed rapidly and surely when overcurrent or short circuit current flows in the IGBT. Therefore, device breakdown is minimized or avoided and noise generation is suppressed. | 01-19-2012 |
20120013371 | GATE DRIVING CIRCUIT - A gate driving circuit for driving a voltage-driven switching device is provided with a current limiting circuit for limiting a gate current ig that flows into a gate terminal through a gate resistor at turn-on to a current limit value IL which defines an upper limit value. The current limit value IL is set at a value which is larger than a gate current value I | 01-19-2012 |
20120019287 | GATE CONTROL CIRCUIT - An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor. | 01-26-2012 |
20120025873 | SEMICONDUCTOR DRIVE DEVICE - When there is a short circuit failure between the gate and emitter of a main switching element such as an IGBT, the temperature of a turn-on gate resistor or turn-off gate resistor is detected by a thermistor, and a drive circuit is protected by turning off a turn-on gate drive switching element or a turn-off gate drive switching element. Furthermore, instead of detecting the temperature of the turn-on gate resistor or turn-off gate resistor, a thermistor is connected in series with the turn-on gate drive switching element or turn-off gate drive switching element, the resistance change corresponding to a change in temperature of the thermistor is detected, and the drive circuit is protected by turning off the turn-on gate drive switching element or turn-off gate drive switching element. | 02-02-2012 |
20120025874 | SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE AND METHOD FOR CONTROLLING THE SAME - A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate. | 02-02-2012 |
20120025875 | APPARATUS FOR DRIVING VOLTAGE CONTROLLED SWITCHING ELEMENTS - An apparatus is provided to drive a voltage controlled switching element having a conduction control terminal. In the apparatus, it is determined whether or not voltage at the conduction control terminal is at a first voltage which is lower than a second voltage and which is equal to or more than a threshold voltage. The second voltage is a voltage provided when the switching element is in a normal on-state thereof. The threshold voltage is voltage at which the switching element is switched on. When it is determined that the voltage at the conduction control terminal is at the first voltage, the switching element is forcibly switched off. | 02-02-2012 |
20120025876 | Current Driving Circuit and Display Device Using The Current Driving Circuit - A current drive circuit which can improve a rate for signal writing and a driving rate of an element even when a signal current is small, and a display device using the current drive circuit are provided. The current drive circuit for supplying a signal current to a node of a driven circuit through a signal line includes a precharge function for supplying a precharge voltage to the node through the signal line and the precharge function includes a supply function for supplying the precharge voltage to the node and the signal line prior to supplying the signal current. | 02-02-2012 |
20120032708 | GATE DRIVER POWER AND CONTROL SIGNAL TRANSMISSION CIRCUITS AND METHODS - Methods, systems, and devices are described for both power and control signal transmission through a single coupled inductor. A current driver generates a cyclical current signal on a primary winding of a coupled inductor, to induce a voltage signal at the secondary winding corresponding to the cyclical current signal. A rectifier module is coupled with the secondary winding and configured to rectify the signal induced at the secondary winding. A control timing signal module is coupled with the primary winding and configured to induce voltage pulses on the secondary winding, the induced voltage pulses having an insubstantial impact on the output of the rectifier module. A switching module coupled with the secondary winding is configured to receive the voltage pulses and control a switching signal for a power switch coupled with the output of the rectifier and provide power to a load coupled with the output of the rectifier. | 02-09-2012 |
20120032709 | SEMICONDUCTOR DEVICE DRIVING UNIT AND METHOD - A turn-off feedback unit ( | 02-09-2012 |
20120032710 | SEMICONDUCTOR DEVICE DRIVING UNIT AND METHOD - A semiconductor device ( | 02-09-2012 |
20120032711 | SYSTEM AND METHOD FOR PRE-CHARGING A CURRENT MIRROR - A system for pre-charging a current mirror includes a controller configured to provide a first current and an additional current to a current mirror to rapidly charge a capacitance associated with the current mirror based on a reference voltage or control signals. A power amplifier module includes at least one current minor and a controller. A capacitor is coupled to the current minor. The controller provides a bias current in an amount proportional to an input to a voltage-to-current converter. The controller receives a control signal that directs the controller to apply one of a pre-charge voltage and a nominal voltage to the voltage-to-current converter. | 02-09-2012 |
20120032712 | HIGH TEMPERATURE OPERATING PACKAGE AND CIRCUIT DESIGN - The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the printed circuit board. In another embodiment, the semiconductor is stacked onto a second device and optionally thermally isolated from the second device. | 02-09-2012 |
20120032713 | Semiconductor Device and Power Supply Unit Utilizing the Same - A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals. | 02-09-2012 |
20120032714 | OUTPUT DRIVER DEVICE FOR INTEGRATED CIRCUIT - A driver device drives a load circuit by a common output signal from a first driver transistor and a second driver transistor. The driver device includes a first pre-driver unit that outputs a first driver control signal to the first driver transistor in response to the input signal; and a second pre-driver unit that outputs a second driver control signal to the second driver transistor in response to the input signal. The first pre-driver unit controls the first driver control signal in such a manner that the first driver control signal is rounded in the vicinity of a threshold of the first driver transistor and is sharply changed in a region exceeding the threshold. | 02-09-2012 |
20120038391 | TRANSISTOR MODULE AND TRANSISTOR DRIVING MODULE - The present invention discloses a transistor driving module, coupling to a converting controller, to driving a high side transistor and a low side transistor connected in series, wherein one end of the high side transistor is coupled to an input voltage and one end of the low side transistor is grounded. The transistor driving module comprises a high side driving unit, a low side driving unit, a current limiting unit and an anti-short through unit. The high side driving unit generates a high side driving signal to turn the high side transistor on according to a duty cycle signal, and the low side driving unit generates a low side driving signal turn the low side transistor on according to the high side driving signal. The current limiting unit is coupled to the high side transistor and the high side driving unit, and generates a current limiting signal when a current flowing through the high side transistor higher than a current limiting value. The high side driving unit is stopped to generate the high side driving signal when receiving the current limiting value. The anti-short through unit is coupled to the high side driving unit and the low side driving unit to control the generations of the high side driving signal and the low side driving signal to have the timings of the high side driving signal and the low side driving signal non-overlapped. | 02-16-2012 |
20120038392 | DRIVING CIRCUIT OF INSULATED GATE DEVICE - A driving circuit for driving an insulated gate semiconductor device based on a voltage of an externally-inputted gate signal, where the insulated gate semiconductor device has a source, a drain and a gate, and a parasitic capacitor exists between the drain and the gate. The driving circuit includes a gate voltage controlling semiconductor device disposed between, and connecting, the gate and the source of the insulated gate semiconductor device. The gate voltage controlling semiconductor device has a source and a gate, and is driven by a current charging the parasitic capacitor. The driving circuit also includes a pull-up device disposed between, and connecting, the source and the drain of the gate voltage controlling semiconductor device. | 02-16-2012 |
20120056646 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - An object is to alleviate the concentration of an electric field in a semiconductor device. A gate electrode and a drain electrode are provided not to overlap with each other, and an electric-field control electrode is provided between the gate electrode and the drain electrode over a top surface. Insulating layers are provided between the gate electrode and a semiconductor layer and between the electric-field control electrode and the semiconductor layer, and the insulating layer provided between the electric-field control electrode and the semiconductor layer has a larger thickness than the insulating layer provided between the gate electrode and the semiconductor layer. Further, when the semiconductor device is driven, the potential of the electric-field control electrode may be higher than or equal to a source potential and lower than a gate potential, and for example, connection between the electric-field control electrode and the source potential enables such a structure. | 03-08-2012 |
20120056647 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - The semiconductor device includes a memory cell including a first transistor including a first channel formation region, a first gate electrode, and first source and drain regions; a second transistor including a second channel formation region provided so as to overlap with at least part of either of the first source region or the first drain region, a second source electrode, a second drain electrode electrically connected to the first gate electrode, and a second gate electrode; and an insulating layer provided between the first transistor and the second transistor. In a period during which the second transistor needs in an off state, at least when a positive potential is supplied to the first source region or the first drain region, a negative potential is supplied to the second gate electrode. | 03-08-2012 |
20120056648 | SEMICONDUCTOR DEVICE, ELECTRIC CIRCUIT USING THE SAME AND METHOD OF CONTROLLING ELECTRIC CIRCUIT - The operation of a HEMT is monitored on an on-chip basis without increasing the power consumption rate. In a semiconductor device | 03-08-2012 |
20120062281 | Power Converter with Split Power Supply - A power converter driver that is supplied with two different voltages. | 03-15-2012 |
20120068739 | HIGHLY EFFICIENT CLASS-D AMPLIFIER - A simplistic low cost circuit that generates the necessary drive voltage for use in a source follower totem pole power switching circuit is described where the simplified gate drive circuit may have a dual charge pump and a complementary pair of low-power switching Mosfets. | 03-22-2012 |
20120074988 | ELECTRONIC DEVICE WITH DYNAMIC DRIVE STRENGTH ADJUSTMENT TO MITIGATE IMPACT OF SYSTEM NOISE ON WIRELESS PERFORMANCE - Electronic devices such as portable computers may contain circuits that generate radio-frequency noise. The radio-frequency noise may interfere with the operation of sensitive circuitry such as wireless communications circuitry. The circuits that generate the radio-frequency noise may include differential signal drivers that drive signals onto communications lines such as lines in a bus or output interface. A control circuit may power the drivers at an adjustable driver voltage bias level. The amount of noise that is generated by the drivers may vary as a function of the voltage bias level and may produce different amounts of noise at different wireless frequencies. Computer lid position and other factors may also influence the amount of interference that is generated. The control circuit may determine the current operating state of the device and may make voltage bias level adjustments that minimize interference between the drivers and the wireless circuitry. | 03-29-2012 |
20120086479 | Controlling Power Chain with Same Controller in Either of Two Different Applications - A controller for controlling a power chain in an electronic device can be used in either of two different applications. The first application requires the controller to produce drive signals for driving discrete power MOSFETs within the power chain. The second application requires the controller to produce an output PWM signal to control an integrated circuit having power MOSFETs integrated with MOSFET drivers within the power chain. The controller generally includes a sensor that detects which of the two applications the controller is in. The controller also generally includes outputs that produce, when the controller is in the first application, the drive signals for driving the discrete power MOSFETs. But when the controller is in the second application, one of the outputs is used to produce the output PWM signal for controlling the integrated circuit. | 04-12-2012 |
20120092043 | High Voltage Output Driver - An output driver circuit is provided. In accordance with various example embodiments, an output driver circuit includes a high-side driver circuit having transistors coupled in anti-series between a power source and an output node, and a low-side driver circuit having transistors coupled in anti-series between the output node and ground. For each transistor, a diode is connected between the source and drain of the transistor, with the diodes of the respective high-side and low-side circuits being arranged to prevent/mitigate the flow of current in opposite directions. | 04-19-2012 |
20120098577 | GATE DRIVER UNIT FOR ELECTRICAL SWITCHING DEVICE - An exemplary apparatus and method for using intelligent gate driver units with distributed intelligence to control antiparallel power modules or parallel-connected electrical switching devices like IGBTs is disclosed. The intelligent gate drive units use the intelligence to balance the currents of the switching devices, even in dynamic switching events. The intelligent gate driver units can use master-slave or daisy chain control structures and instantaneous or time integral differences of the currents of parallel-connected switching devices as control parameters. Instead of balancing the currents, temperature can also be balanced with the intelligent gate driver units. | 04-26-2012 |
20120112800 | Method of and Driver Circuit for Operating a Semiconductor Power Switch - To operate a semiconductor power switch having a control electrode and a reference electrode in response to first and second switching commands, a control voltage between a first electric pole and a second electric pole is provided. Upon each first switching command, the control electrode is coupled to the first electric pole, and the reference electrode is coupled to the second electric pole; and upon each second switching command, the control electrode is coupled to the second electric pole, and the reference electrode is coupled to the first electric pole. Upon each switching command, continuously transitioning an electric potential of the one of the control and reference electrodes during a first transition period, and continuously transitioning an electric potential of the respective other of the control and reference electrodes during a second transition period occurs, wherein the first transition period beginning before and ending after the second transition period. | 05-10-2012 |
20120112801 | Low-Current Input Buffer - A current-limited differential entry stage compares an input signal to a reference voltage generated by a current-limited transistor or diode configuration. Current limiters comprise a D-mode feedback transistor having a gate-source junction. The D-mode transistor is not conducting between the source and the drain if a gate-source voltage is more negative than a negative threshold voltage, and conducting between the source and the drain, otherwise a feedback connection connects the source of the D-mode feedback transistor to its gate via a component that generates a voltage drop. | 05-10-2012 |
20120112802 | DRIVING TRANSISTOR CONTROL CIRCUIT - A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal. | 05-10-2012 |
20120119796 | PASS TRANSISTOR CAPACITANCE AND JITTER REDUCTION - A system comprises a pass switch circuit and a first pass switch activation circuit. The pass switch circuit includes an impedance circuit and a pass transistor having a first source/drain connection, a second source/drain connection, and a gate input. The pass switch circuit passes an electronic signal from the first source/drain connection to the second source/drain connection in response to activation of the gate input. An impedance transfer function of the pass switch circuit is determined at least in part by an impedance of the impedance circuit and the impedance is sized to minimize attenuation of the electronic signal due to the impedance transfer function of the pass switch circuit. The first pass switch activation circuit provides a first activation signal to the gate input in response to an enable signal. | 05-17-2012 |
20120126860 | GATE DRIVING CIRCUIT - A highly-reliable gate driving circuit achieved by suppressing the amount of hot-carriers generated in a MOSFET. In the gate driving circuit having NOEMI circuits, same-type NOEMI circuits are connected in series with a p-channel MOSFET constituting a gate charging circuit and an n-channel MOSFET constituting a gate discharging circuit, respectively, so as to suppress the amount of hot-carriers generated in the p-channel MOSFET and the n-channel MOSFET. | 05-24-2012 |
20120126861 | LOAD DRIVING CIRCUIT - A load driving circuit in which the off-time Toff and the fall time Tf can be improved in turn-off operation of the N-channel type MOSFET used as a high side switch. The load driving circuit uses an N-channel type power MOSFET as a high side switch connected between a power supply and a load, including a comparator circuit for comparing a gate voltage of the power MOSFET with a power-supply voltage; and a shut-off circuit for discharging the gate terminal of the power MOSFET in turn-off operation of the power MOSFET, the rate of discharging the gate terminal of the power MOSFET performed with the shut-off circuit being set such that the discharge rate provided if the gate voltage Vg is lower than the power-supply voltage Vp is slower than the rate of discharging the same provided if the gate voltage Vg is higher than the power-supply voltage Vp. | 05-24-2012 |
20120133398 | System and Method for Driving a Cascode Switch - In accordance with an embodiment, a method of driving switches includes sensing a control node of a first switch, sensing a control node of a second switch, and driving the control node of the first switch to a first active state after the control node of the second switch transitions to a second active state. The method also includes driving the control node of the second switch to a second inactive state after the control node of the first switch transitions to a first inactive state. Driving the control node of the first switch is based on sensing the control node of the second switch, and driving the control node of the second switch is based on based on sensing the control node of the first switch. | 05-31-2012 |
20120133399 | SEMICONDUCTOR DEVICE HAVING SENSE AMPLIFIER - A semiconductor device includes a first driver circuit for supplying a first potential to a first power supply node of the sense amplifier, second and third driver circuits for supplying a second potential and a third potential to a second power supply node of the sense amplifier, and a timing control circuit for controlling operations of the first to third driver circuits. The timing control circuit includes a delay circuit for deciding an ON period of the third driver circuit. The delay circuit includes a first delay circuit having a delay amount that depends on an external power supply potential and a second delay circuit having a delay amount that does not depend on the external power supply potential, and the ON period of the third driver circuit is decided based on a sum of the delay amounts of the first and second delay circuits. | 05-31-2012 |
20120139589 | GATE DRIVER AND SEMICONDUCTOR DEVICE EMPLOYING THE SAME - A gate driver for driving a gate of a switching element Tr | 06-07-2012 |
20120153995 | RESONANT TANK DRIVE CIRCUITS FOR CURRENT-CONTROLLED SEMICONDUCTOR DEVICES - A resonant tank circuit has an output port configured to be coupled to a load comprising a current-controlled semiconductor device, such as a diode, thyristor, transistor or the like. A voltage generator circuit is configured to intermittently apply voltages to an input port of the resonant tank circuit in successive intervals having a duration equal to or greater than a resonant period of the resonant tank circuit. Such an arrangement may be used, for example, to drive a static switch. | 06-21-2012 |
20120153996 | GATE DRIVING CIRCUIT ON ARRAY APPLIED TO CHARGE SHARING PIXEL - The disclosure provides a gate driving circuit on array applied to a display panel with charge sharing pixel structure. In particular, the gate driving circuit is adapted to receive multi-phase clock signal and includes a plurality of shift registers. Each shift register includes a driving circuit including a first driving transistor and a second driving transistor, a pull-down unit and at least one pull-up unit, so that is capable of generating mutually non-overlapped main gate driving signal and sub gate driving signal. Furthermore, the advantage of the disclosure is to provide a gate driving circuit with simplified circuit structure and circuit layout. | 06-21-2012 |
20120153997 | Circuit for Generating a Reference Voltage Under a Low Power Supply Voltage - A circuit for generating a reference voltage including: a first current source in series with a first bipolar transistor, between a first and a second terminal of application of a power supply voltage; a second current source in series with a second bipolar transistor and a first resistive element, between said first and second terminals, the junction point of the first resistive element and of the second bipolar transistor defining a third terminal for providing the reference voltage; a follower assembly having an input terminal connected between the first current source and the first bipolar transistor, and having an output terminal connected to a base of the second bipolar transistor; and a resistive dividing bridge between the output terminal of the follower assembly and said second terminal, the midpoint of this dividing bridge being connected to a base of the first bipolar transistor. | 06-21-2012 |
20120153998 | GATE DRIVE CIRCUIT - A gate drive circuit capable of turning on a semiconductor switching element at high speed, which includes: a buffer circuit including a turn-on-drive switching element and a turn-off-drive switching element that are complementarily turned on and off, for driving the semiconductor switching element; a first DC voltage supply including a positive electrode connected to the source or emitter of the turn-on-drive switching element and a negative electrode connected to a reference potential; and a second DC voltage supply including a positive electrode connected to the source or emitter of the turn-off-drive switching element and a negative electrode connected to the reference potential. | 06-21-2012 |
20120161819 | HIGH VOLTAGE TRANSMISSION SWITCH, NAMELY FOR ULTRASOUND APPLICATIONS - A high voltage transmission switch comprises a switching block coupled between a connection terminal to a load and a low voltage output terminal and comprising at least a first switching transistor and a second switching transistor coupled between the connection terminal and the low voltage output terminal and interconnected at a first circuit node; and a driving circuit coupled between a positive low voltage supply reference and a negative high voltage supply reference and having an output terminal connected to the switching block. The driving circuit including at least a first driving transistor coupled between the positive low voltage supply reference and the output terminal and a second driving transistor coupled between the output terminal and the negative high voltage supply reference. | 06-28-2012 |
20120161820 | GATE DRIVE CIRCUIT, DISPLAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE - A gate drive circuit includes plural stages connected together one after each other. Each of the plural stages includes a circuit transistor, a capacitor part, a first connection part and a second connection part. The circuit transistor outputs the gate signal through a source electrode in response to a control signal applied through a gate electrode. The capacitor part includes a first electrode, a second electrode formed on the first electrode, and a third electrode formed on the second electrode. The first connection part electrically connects the gate electrode of the circuit transistor and the second electrode of the capacitor part. The second connection part electrically connects the source electrode of the circuit transistor and the first electrode of the capacitor part. Thus, an integrated size of a gate drive circuit may be decreased, and a reliability of a gate drive circuit may be enhanced. | 06-28-2012 |
20120161821 | VARIABLE RESISTANCE DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE VARIABLE RESISTANCE DEVICE, AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE - A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device. | 06-28-2012 |
20120161822 | ELECTRICAL LOAD DRIVING APPARATUS - The electrical load driving apparatus includes means for alternately lowering the gate voltages of two current supply transistors connected in parallel to each other at regular time intervals, a current being supplied to an electrical load through drain-source paths of both the current supply transistors, and means for detecting wire breakage in two current supply wires in which the current supply transistors are interposed respectively at portions near the electrical load with respect to the current supply transistors based on the drain-source voltages of the current supply transistors. | 06-28-2012 |
20120169381 | OUTPUT SLEW RATE CONTROL - This document discusses, among other things, output slew rate control. Methods and structures are described to provide slew rate control of an output driver circuit such as a DRAM output driver on a die. A selectable combination of series coupled transistors are configured as a parallel array of complementary inverter pairs to provide a divided voltage to a calibrator. The calibrator is configured to respond to a differential voltage to adjust the divided voltage such that the differential voltage is forced to zero. The calibrator outputs a plurality of discrete signals from an up/down counter to toggle the individual transistors of the parallel array to increase and decrease a collective current. In some embodiments, transistor channel currents are modulated to step-adjust a voltage based on a ratio associated with a static resistance. In various embodiments, the divided voltage is an analog voltage based on a resistance associated with trim circuitry. | 07-05-2012 |
20120176164 | Circuit Arrangement Having a Load Transistor and a Voltage Limiting Circuit and Method for Driving a Load Transistor - The present invention relates to a circuit arrangement having the following features:
| 07-12-2012 |
20120182049 | System and Method for Driving a Switch Transistor - In an embodiment, a method of driving a switch transistor includes activating the switch transistor by charging a control node of the switch transistor at a first charging rate for a first time duration. After charging the control node of the switch transistor at the first charging rate, the control node of the switch transistor is further charged at a second charging rate until the control node of the switch transistor reaches a target signal level, where the second charging rate is less than the first charging rate. | 07-19-2012 |
20120182050 | GATE DRIVING CIRCUIT AND DISPLAY DEVICE INCLUDING THE SAME - Embodiments may be directed to a gate driving circuit. The gate driving circuit includes a pre-charge unit, a pull-up unit, a boosting unit, and a discharge unit. The pre-charge unit pre-charges a first node in response to a first input signal. The pull-up unit outputs a first clock signal as a gate driving signal in response to a first node signal of the first node. The boosting unit boosts the first node signal of the first node in response to the first node signal and the first clock signal. The discharge unit discharges the first node to a gate-off voltage level in response to a second input signal and a second clock signal. | 07-19-2012 |
20120182051 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 07-19-2012 |
20120194226 | SWITCHING ELEMENT CONTROL APPARATUS - A switching element control apparatus capable of controlling a switching element that is driven by controlling a voltage on its control terminal properly in response to characteristic information of the switching element. The apparatus includes a constant current circuit that applies a constant current to the control terminal, a voltage-limiting circuit that limits the voltage on the control terminal so as not to exceed a limiting voltage, and a control circuit that controls the constant current circuit to apply the constant current to the control terminal when having received a drive signal for turning on the switching element, and controls the voltage-limiting circuit to limit the voltage on the control terminal for a voltage-limiting time period. The control circuit includes a memory storing the characteristic information and variably sets at least one of the limiting voltage, the voltage-limiting time period, and the constant current in response to the characteristic information. | 08-02-2012 |
20120200319 | Method for operating a PWM output of a driver for a power semiconductor - A method for outputting an analog value at a PWM output of a driver for a power semiconductor. The method comprises converting the analog value to a PWM signal which has two signal levels and which is at a fixed PWM frequency. For an inactive state of a binary supplementary value the PWM signal is output at the PWM output. For an active value of the supplementary value the PWM signal is output together with a supplementary signal at the PWM output. The current signal level of the PWM signal and the respective other signal level are output alternately as a supplementary signal at a signal frequency greater than the PWM frequency. | 08-09-2012 |
20120200320 | CONTROL CIRCUIT AND METHOD FOR CONTROLLING A POWER SEMICONDUCTOR SWITCH - A driving circuit for driving a power semiconductor switch wherein at least one semiconductor device being provided which is implemented in such a way that it is operated in breakdown in response to the exceeding of a specific collector-emitter voltage of the power semiconductor switch, an output of the at least one semiconductor device being connected via a conductive interconnect to a terminal between the resistors of the resistor series circuit or to the resistor-series-circuit output which is connected to the signal processing unit, and the breakdown voltage of the at least one semiconductor device being selected in such a way that the potential at the output of the at least one semiconductor device is greater than the potential at the gate of the power semiconductor switch in its ON state. The invention further relates to a method for driving a power semiconductor switch. | 08-09-2012 |
20120206169 | DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT - A drive circuit for a semiconductor switching element is disclosed. The drive circuit includes a power supply, a capacitor, a connection changeover unit for switching a connection form between the power supply and the capacitor, a resistor connected to a control terminal of the semiconductor switching element, first and second switching elements whose common connection point is connected to the resistor, a positive-side diode whose cathode is connected to the first switching element, a negative-side diode whose anode is connected to the second switching element, and a current conduction control circuit for controlling the connection changeover unit, and the first and second switching elements to form (i) a first path for charging the capacitor, (ii) a second path for charging the control terminal of the semiconductor switching element, and (iii) a third path for discharging the control terminal of the semiconductor switching element. | 08-16-2012 |
20120206170 | SEMICONDUCTOR SWITCHING DEVICE DRIVE CIRCUIT - Four energization switching devices and positive/negative switching devices are controlled to form a path charging a positive capacitor; a path connecting a power supply with the positive capacitor in series and energizing an inductor to charge a control terminal of a target switching device; a path charging the control terminal using electromagnetism in the inductor; a path supplying circulating current to the power supply when potential of the control terminal becomes higher than voltage of the power supply; a path charging a negative capacitor; a path connecting the power supply with the negative capacitor in series and energizing the inductor to discharge the control terminal; a path discharging the control terminal using electromagnetism in the inductor; and a path supplying circulating current to the power supply when potential of the control terminal becomes lower than potential of a negative terminal of the power supply. | 08-16-2012 |
20120206171 | SEMICONDUCTOR SWITCHING DEVICE DRIVE CIRCUIT - One of first and second switching devices turns on to flow a current along a current path between a potential reference output terminal of a drive-target switching device and a control terminal of the drive-target switching device to turn on the drive-target switching device. Thereby, a voltage changes between the control terminal of the drive-target switching device and the potential reference output terminal of the drive-target switching device to turn off the one of the first and second switching devices being turned on. Thereby, a potential of the control terminal of the drive-target switching device is clamped. | 08-16-2012 |
20120206172 | INTERNAL POWER SUPPLY VOLTAGE GENERATION CIRCUIT - Provided is an internal power supply voltage generation circuit, with which a through current that flows during the operation of a logic circuit can be prevented from being excessive due to fluctuations in threshold voltage of a P-type transistor and an N-type transistor forming the logic circuit, and current consumption can be suppressed. Provided is an internal power supply voltage generation circuit for generating an internal power supply voltage at an internal power supply terminal and supplying the internal power supply voltage to a logic circuit, the internal power supply voltage generation circuit including a transistor having a source follower configuration for outputting a voltage applied to a gate thereof. A value of the internal power supply voltage is given based on the sum of an absolute value of a threshold voltage of an N-type transistor and an absolute value of a threshold voltage of a P-type transistor. | 08-16-2012 |
20120206173 | Control of cross-over point - There is provided an output stage comprising: a phase splitter for receiving an input signal and for generating first and second drive signals of opposite phase in dependence thereon; a DC offset signal generator for generating a DC offset signal; an adder for adding the DC offset signal to the first drive signal to provide a first modified drive signal; a subtractor for subtracting the DC offset signal from the second drive signal to provide a second modified drive signal; a first drive transistor associated with a first power supply voltage, for generating a first output signal in dependence on the first modified drive signal; a second drive transistor associated with a second power supply voltage, for generating a second output signal in dependence on the second modified drive signal; and a combiner for combining the first and second output signals to generate a phase combined output signal. | 08-16-2012 |
20120206174 | DRIVING CIRCUIT FOR SWITCHING ELEMENT AND POWER CONVERTER - A short-circuit protection circuit ( | 08-16-2012 |
20120212262 | Driver Circuit for a Semiconductor Power Switch - A driver circuit for controlling a semiconductor power switch comprises a first power driver transistor and a second power driver transistor complementary to the first power driver transistor. Both power driver transistors have an output terminal connected to an input terminal of the semiconductor power switch. An input terminal of the second power driver transistor is connected to a half bridge circuit comprising a first pre-driver transistor and a second pre-driver transistor complementary to the first pre-driver transistor. Both first and second pre-driver transistors have an output terminal connected to the input terminal of the second power driver transistor. This provides fast switching times with low power consumption for the pre-driver transistors. | 08-23-2012 |
20120218009 | CONTROL CIRCUIT OF TRANSISTOR AND METHOD - A control circuit, which controls a transistor including a gate and a field plate, includes: a detecting circuit which detects a driving timing to drive the transistor; a timing controlling circuit which controls a first driving timing to drive the gate and a second driving timing to drive the field plate, in response to the driving timing; and a driving circuit which drives the gate in response to the first driving timing, and drives the field plate in response to the second driving timing. | 08-30-2012 |
20120218010 | SEMICONDUCTOR SWITCH - A semiconductor switch includes: a switch section, provided on a substrate, switching connection states among a plurality of terminals; a positive voltage generator generating a positive potential higher than a supply potential supplied from a power-supply line; a driver, connected to an output line of the positive voltage generator, supplying a control signal to the switch section in response to a terminal switching signal; and a voltage controller, provided on the same substrate, controlling to connect the output line of the positive voltage generator to the power-supply line for a first period corresponding to a change in the connection states, and controlling to disconnect the output line from the power-supply line after the first period. | 08-30-2012 |
20120218011 | GATE DRIVER FOR ENHANCEMENT-MODE AND DEPLETION-MODE WIDE BANDGAP SEMICONDUCTOR JFETS - A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET. | 08-30-2012 |
20120223744 | CONTROL OF SEMICONDUCTOR COMPONENT - An exemplary method and a control circuit are disclosed for controlling a power semiconductor component by producing a control signal (Ucin) for controlling the component, forming a second control signal (Ucout) in the potential of the controlled component from the control signal (Ucin), measuring a current flowing through the component, and comparing the measured current with a set limit. A fault signal (Ufault) having a logical state is provided on the basis of the comparison between the measured current and the set limit, producing a component control signal (Uave) from the fault signal (Ufault) and the second control signal (Ucout). If a fault is indicated, the component control signal has a value between high and low states, and otherwise the state of the component control signal (Uave) equals the state of the second control signal (Ucout). | 09-06-2012 |
20120223745 | MONOLITHIC LOW IMPEDANCE DUAL GATE CURRENT SENSE MOSFET - A power switch includes a first power transistor having a first source electrode, a first gate electrode, and a first drain electrode, and a second power transistor having a second source electrode, a second gate electrode, and a second drain electrode. The power switch further includes a first pilot transistor which has a third source electrode, a third gate electrode, and a third drain electrode. The first, second and third drain electrodes are electrically connected together. The first and second source electrodes are electrically connected together. The first and third gate electrodes are electrically connected together and can be biased independently from the second gate electrode. The first power transistor is the same size as or smaller than the second power transistor and the first power transistor is larger than the first pilot transistor. | 09-06-2012 |
20120223746 | METHOD AND APPARATUS SWITCHING A SEMICONDUCTOR SWITCH WITH A MULTI-STAGE DRIVE CIRCUIT - A multi-stage drive circuit is to be coupled to a semiconductor switch having a drive terminal, a first terminal and a second terminal, to switch the semiconductor switch on and off. The multi-stage drive circuit includes a first drive circuit, a second drive circuit and a selector circuit. The first drive circuit is to be coupled to provide a first drive signal to the drive terminal of the semiconductor switch and the second drive circuit is to be coupled to provide a second drive signal to the drive terminal of the semiconductor switch. The selector circuit is to be coupled to turn on the first and second drive circuits to provide the first and second drive signals to the drive terminal, respectively. The selector circuit turns on the second drive circuit responsive to a voltage between the first and second terminals of the semiconductor switch falling to a threshold value. | 09-06-2012 |
20120229173 | Rapid switchable HV P-MOS power transistor driver with constant gate-source control voltage - Systems and methods for providing a rapid switchable high voltage power transistor driver with a constant gate-source control voltage have been disclosed. A low voltage control stage keeps the gate-source voltage constant in spite of temperature and process variations. A high voltage supply voltage can vary between about 5.5 Volts and about 40 Volts. The circuit allows a high switching frequency of e.g. 1 MHz and minimizes static power dissipation. | 09-13-2012 |
20120229174 | OUTPUT STAGE CIRCUIT FOR OUTPUTTING A DRIVING CURRENT VARYING WITH A PROCESS - An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor. When a second terminal of the N-type metal-oxide-semiconductor transistor receives a kick signal, a driving current flowing through the second P-type metal-oxide-semiconductor transistor is relevant to the voltage of the third terminal of the first P-type metal-oxide-semiconductor transistor. | 09-13-2012 |
20120229175 | Coupling Circuit, Driver Circuit and Method for Controlling a Coupling Circuit - A coupling circuit has a first and a second transistor (P | 09-13-2012 |
20120229176 | Integrated Semiconductor Device - A III-nitride device that includes a silicon body having formed therein an integrated circuit and a III-nitride device formed over a surface of the silicon body. | 09-13-2012 |
20120235710 | Circuit Arrangement with a MOSFET and an IGBT - A circuit includes at least one FET and at least one IGBT that have their load paths connected in parallel. A voltage limiting circuit is coupled to a gate terminal of the at least one IGBT. | 09-20-2012 |
20120235711 | LINE DRIVER - A line driver includes the following. A current replication unit replicates a reference current according to an input signal. A current mapping unit adjusts a number of P channel transistors connected in parallel and inside the current mapping unit according to control information, so as to amplify the reference current according to a magnification value. A first resistor is electrically connected between the current replication unit and a direct-current voltage. A second resistor is electrically connected to the current replication unit and the current mapping unit and generates an output signal. A signal detection unit performs integration on a part of a difference between the input signal and the output signal, thereby generating an integration signal. A magnification control unit gradually adjusts magnification information related to a reference signal, and updates the control information by the magnification information when the reference signal is equal to the integration signal. | 09-20-2012 |
20120235712 | HIGH VOLTAGE SEMICONDUCTOR DEVICE AND DRIVING CIRCUIT - A high voltage semiconductor device is provided and includes an n | 09-20-2012 |
20120235713 | WIRING BOARD AND DISPLAY APPARATUS - The present invention provides a wiring board wherein the resistance difference between multiple connection lines is reduced. The wiring board of the present invention comprises: a control region and a peripheral region. The control region includes multiple gate lines extending in a row direction and multiple source lines extending in a column direction. The peripheral region includes a gate driver connected with the gate lines; a source driver connected with the source lines; and multiple connection lines which extend around the control region and which connect the gate driver with the gate lines. Each of the connection lines includes a gate metal portion formed from a material of the gate lines and a source metal portion formed from a material of the source lines. An insulating layer is disposed between the gate metal portion and the source metal portion. The gate metal portion and the source metal portion are connected with each other via a contact portion which penetrates the insulating layer. | 09-20-2012 |
20120242375 | SWITCHING CIRCUIT DEVICE AND CONTROL CIRCUIT - A switching circuit device has a first transistor which has a drain coupled to a high-potential terminal, a source coupled to a low-potential power supply, and, a driving circuit, which outputs, to a gate of the first transistor in response to an input control signal, a pulse having a potential higher than a threshold voltage of the first transistor and a potential of the low-potential power supply, wherein the driving circuit has a first inverter including a second transistor provided between the gate and the source of the first transistor, wherein when the first transistor changes from on to off due to the pulse, the second transistor conducts and short-circuits the gate and the source of the first transistor. | 09-27-2012 |
20120242376 | LOAD DRIVE APPARATUS AND SEMICONDUCTOR SWITCHING DEVICE DRIVE APPARATUS - A load drive apparatus includes a switching device, a gate drive circuit, a clamp circuit, a temperature detection circuit, and an arithmetic device. The switching device controls an on-off state of current supply to a load. The gate drive circuit turns on the switching device by controlling a gate voltage of the switching device so that the switching device operates in a full-on state. The clamp circuit clamps the gate voltage of the switching device to a clamp voltage lower than the gate voltage in the full-on state and higher than a mirror voltage. The temperature detection circuit detects a temperature of the switching device. The arithmetic device calculates a voltage corresponding to a variation in a mirror voltage based on the detected temperature and controls the clamp voltage in the clamp circuit so as to be the calculated voltage. | 09-27-2012 |
20120249189 | SINGLE-PULSE RESONANT GATE DRIVER FOR DRIVING SWITCHES IN RESONANT ISOLATED CONVERTERS AND OTHER SYSTEMS - A gate driving circuit includes a driving stage configured to receive an input signal and generate a gate drive signal for a gate of a transistor switch. The gate driving circuit also includes an LC circuit having an inductor and a gate capacitance of the transistor switch. The LC circuit is configured so that a pulse in the gate drive signal generates a ringing in the LC circuit at a resonance frequency of the LC circuit to transfer energy into and out of the gate capacitance of the transistor switch. A switch could selectively couple the gate of the transistor switch to ground in order to discharge the gate capacitance. A control circuit could be used to provide the input signal, and the control circuit could be configured to regulate a duty cycle of the gate drive signal by adjusting an off-time between consecutive pulses in the input signal. | 10-04-2012 |
20120249190 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - To provide a semiconductor device including an A/D converter circuit that is capable of performing A/D conversion with high accuracy and high resolution and that can be reduced in size. One loop resistance wiring is shared by a plurality of power supply switches and a plurality of output circuits, and a reference voltage having a triangular (step-like) wave generated using the resistance wiring and the plurality of power supply switches is utilized. Thus, high-accuracy digital signals can be obtained using such an A/D converter circuit that can be reduced in size as an output circuit, without using a complicated circuit structure. Further, the number of constituent elements of the A/D converter circuit is small, whereby in the case of providing A/D converter circuits in parallel, variation between the A/D converter circuits can be made small. | 10-04-2012 |
20120256661 | Current Mode Line Driver - The present invention discloses a line driver for a communication system with a variable loading. The line driver includes a positive output terminal, a negative output terminal, a plurality of current cells, for generating a plurality of output currents, and a plurality of switches, for controlling a number of connections between the plurality of current cells and the positive output terminal and the negative output terminal according to impedance of the variable loading, to generate a total output current such that a output voltage swing stays within a specific range. | 10-11-2012 |
20120262206 | DATA LATCH CIRCUIT AND ELECTRONIC DEVICE - The data latch circuit of the invention includes a means for short-circuiting an input terminal and an output terminal of an inverter and by connecting the input terminal to one electrode of a capacitor and sampling a data signal or a reference potential to the other electrode of the capacitor, an accurate operation can be obtained without being influenced by variations in the TFT characteristics even when the amplitude of an input signal is small relatively to the width of a power supply voltage. | 10-18-2012 |
20120280725 | DRIVER CIRCUIT, DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT, AND ELECTRONIC APPLIANCE INCLUDING THE DISPLAY DEVICE - An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit. | 11-08-2012 |
20120286828 | Apparatus and Method for Introducing a Controllable Delay to an Input Signal - An apparatus including a first electrode portion configured to inject charge carriers; a second electrode portion configured to collect charge carriers and provide an output signal; a third electrode portion configured to collect charge carriers and provide an output signal; a monolithic semiconductor, providing a first channel for the transport of injected charge carriers between the first electrode portion and the second electrode portion and providing a second channel for the transport of injected charge carriers between the first electrode portion and the third electrode portion, wherein the first channel is configured such that a charge carrier injected at the first electrode portion will reach the second electrode portion via the first channel after a first transport time and the second channel is configured such that a charge carrier injected at the first electrode portion will reach the third electrode portion via the second channel after a second transport time greater than the first transport time; and at least one gate electrode coupled to the monolithic semiconductor configured to enable switching a route for charge carrier transport between at least the first channel and the second channel. | 11-15-2012 |
20120286829 | SEMICONDUCTOR DEVICE AND DRIVING CIRCUIT - A high breakdown voltage semiconductor device includes: an n | 11-15-2012 |
20120293216 | MEMS CAPACITIVE SENSOR BIASING CIRCUIT INCLUDING AN INTEGRATED INDUCTOR - A MEMS capacitive sensor biasing circuit. The circuit includes a high-voltage (HV) NMOS switch, an inductor, a diode, and a capacitor. The HV NMOS switch has a source coupled to ground. The inductor has a first node coupled to a drain of the HV NMOS switch, and a second node coupled to a DC power source supplying a first DC voltage. The diode has an anode coupled to the first node of the inductor and the drain of the HV NMOS switch. The capacitor has a first node coupled to a cathode of the diode, and a second node coupled to the ground. | 11-22-2012 |
20120293217 | FEEDFORWARD ACTIVE DECOUPLING - There are a variety of duty cycle systems, such as low noise amplifiers or LNAs, that have a large time varying current consumption, and parasitic inductances and resistance (usually from bondwires in the package) that can significantly affect supply currents. Thus, to compensate for these parasitics, a boost circuit is provided that allows for current to be supplied from a separate supply using a feedforward scheme to perform active decoupling. | 11-22-2012 |
20120293218 | DRIVE CIRCUIT FOR VOLTAGE-CONTROL TYPE OF SEMICONDUCTOR SWITCHING DEVICE - A charging current is supplied to the gate (control terminal) of a driven switching device during an on-state command interval, for raising the gate voltage to an on-state value. Otherwise, discharging of the gate capacitance is enabled, for decreasing the gate voltage to an off-state value. A second switching device is connected between the gate and a circuit point held at the off-state voltage value, and is maintained in an on state while the gate discharging is enabled. At a first time point, the gate voltage rises above a threshold value. At a second time point, a voltage detection circuit detects that that the gate voltage has risen above the threshold value, causing the second switching device to be set in the off state. It is ensured that the delay between the first and second time points is shorter than a minimum duration of an on-state command interval. | 11-22-2012 |
20120293219 | BOOTSTRAP GATE DRIVER - A bootstrap gate driver including a load indication unit, a bootstrap gate-drive unit and a drive-control unit is provided. The load indication unit is configured to generate a load indication signal in response to a state of a load. The bootstrap gate-drive unit is configured to drive a switch-transistor circuit in response to an inputted pulse-width-modulation (PWM) signal, wherein the switch-transistor circuit has a high-side driving path and a low-side driving path. The drive-control unit is coupled to the load indication unit and the bootstrap gate-drive unit, and configured to enable or disable the high-side driving path in response to the load indication signal. In the invention, the operation of the low-side driving path is not affected by enabling or disabling the high-side driving path. | 11-22-2012 |
20120299624 | VOLTAGE CONTROLLED SWITCHING ELEMENT GATE DRIVE CIRCUIT - A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors. | 11-29-2012 |
20120299625 | GATE DRIVING CIRCUIT - A gate driving circuit includes a control power; a transformer having a primary winding and a secondary winding; a first switching element; a second switching element; a rectifying element; and a capacitance element, wherein the first switching element is connected between the control power and one end of the primary winding, and the second switching element is connected to the other end of the primary winding, wherein one end of the capacitance element is connected to either one of the one end and the other end of the primary winding, and wherein, when one of the first switching element and the second switching element is turned on, the capacitance element is charged by the control power, and when the other of the first switching element and the second switching element is turned on, the capacitance element is discharged. | 11-29-2012 |
20120306545 | GATE DRIVER - A gate driver turns on/off a switching element Q | 12-06-2012 |
20120306546 | SEMICONDUCTOR DEVICE - A semiconductor device configured that its differential pair is made operable in both states of high speed with a high consumption current and low speed with a low consumption current. A differential circuit includes differential pair transistors and a tail current source for supplying a tail current that is switchable so that an amount of current flowing in the differential pair transistors may be switched between at least two sates of different levels. The differential pair transistors have a characteristic that, with a decrease of currents flowing in the differential pair transistors, a value of σ(ΔI/gm) decreases monotonously, where σ denotes a standard deviation, ΔI denotes a difference of the amounts of current of the differential pair transistors, and gm denotes transconductance of the differential pair transistors. | 12-06-2012 |
20120313670 | SYSTEM AND METHODS TO IMPROVE THE PERFORMANCE OF SEMICONDUCTOR BASED SAMPLING SYSTEM - Circuits and methods that improve the performance of electronic sampling systems are provided. Impedances associated with sampling semiconductor switches are maintained substantially constant during sample states, at least in part, by compensating for encountered input signal variations in order to reduce or minimize signal distortion associated with sampled signals that pass through the sampling switch. | 12-13-2012 |
20120319740 | Method and Circuit for Driving an Electronic Switch - Disclosed is an electronic circuit. The electronic circuit includes a transistor having a control terminal to receive a drive signal, and a load path between a first and a second load terminal. A voltage protection circuit is coupled to the transistor, has a control input, is configured to assume one of an activated state and a deactivated state as an operation state dependent on a control signal received at the control input, and is configured to limit a voltage between the load terminals or between one of the load terminals and the control terminal. A control circuit is coupled to the control input of the voltage protection circuit and is configured to deactivate the voltage protection circuit dependent on at least one operation parameter of the transistor and when a voltage across the load path or a load current through the load path is other than zero. | 12-20-2012 |
20120319741 | REDUCED CROSSTALK WIRING DELAY EFFECTS THROUGH THE USE OF A CHECKERBOARD PATTERN OF INVERTING AND NONINVERTING REPEATERS - A buffer arrangement in wire lines in which at least one aggressor wire line is located adjacent and substantially parallel to a victim wire line has a plurality of alternately arranged inverting and noninverting buffers. The alternately arranged in a checkerboard pattern in which noninverting and inverting buffers are located in the victim wire line in locations corresponding to locations of the inverting and noninverting buffers in the at least one aggressor wire line. | 12-20-2012 |
20120319742 | SYSTEMS AND METHODS FOR DRIVING A BIPOLAR JUNCTION TRANSISTOR BY ADJUSTING BASE CURRENT WITH TIME - System and method for driving a bipolar junction transistor for a power converter. The system includes a current generator configured to output a drive current signal to a bipolar junction transistor to adjust a primary current flowing through a primary winding of a power converter. The current generator is further configured to output the drive current signal to turn on the bipolar junction transistor during a first time period, a second time period, and a third time period, the second time period separating the first time period from the third time period, drive the bipolar junction transistor to operate in a hard-saturation region during the first time period and the second time period, and drive the bipolar junction transistor to operate in a quasi-saturation region during the third time period. | 12-20-2012 |
20120326755 | BIAS CIRCUIT - A bias circuit for an operating transistor has a first resistor disposed in a path for supplying a bias current to a base of the operating transistor, a first transistor for applying the bias current flowing to the first resistor, a second transistor for applying a corresponding current corresponding to the bias current supplied via at least one current mirror circuit, a third transistor having bases connected in common with the first transistor for applying the corresponding current, a second resistor for applying the corresponding current and obtaining a voltage drop corresponding to a voltage drop at the first resistor, and a fourth transistor receiving a reference voltage at an emitter side and having a base connected to an emitter side of the third transistor. | 12-27-2012 |
20120326756 | ELECTRONIC CIRCUIT AND METHOD FOR TESTING AND KEEPING A MOS TRANSISTOR SWITCHED-OFF - The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal. A resistor has a first terminal connected to the gate terminal and has a second terminal connected to an auxiliary pad. When the electronic circuit is operating in a test phase and is configured for receiving a test signal for performing the test of the transistor, the auxiliary pad is electrically floating. When the electronic circuit is operating in a normal phase and is configured for receiving a supply voltage, the auxiliary pad is electrically connected to a voltage value smaller than the sum of the voltage value of the source terminal with the threshold voltage value of the transistor. | 12-27-2012 |
20120326757 | CIRCUIT ARRANGEMENT AND METHOD FOR GENERATING A DRIVE SIGNAL FOR A TRANSISTOR - Disclosed is a circuit arrangement for generating a drive signal for a transistor. In one embodiment, the circuit arrangement includes a control circuit that receives a switching signal, a driver circuit that outputs a drive signal, and at least one transmission channel. The control circuit transmits, depending on the switching signal for each switching operation of the transistor, switching information and switching parameter information via the transmission channel to the driver circuit. The driver circuit generates the drive signal depending on the switching information and depending on the switching parameter information. | 12-27-2012 |
20130002310 | GATE DRIVING CIRCUIT - A gate driving circuit includes a thermal sensing unit for sensing temperature to output a sensing voltage, a compare unit for comparing the sensing voltage with a reference voltage to output a control voltage, a charging control module for controlling a pre-charging operation according to the control voltage, and a plurality of shift register stages. Each shift register stage includes an input unit for outputting a driving control voltage according to a first input signal, a clock input unit for outputting a driving voltage according to a system clock, a driving unit for outputting a gate signal according to the driving control voltage and the driving voltage, and a pull-down unit for pulling down the gate signal and the driving control voltage according to a second input signal. The driving voltage is also controlled by the pre-charging operation for enhancing driving ability. | 01-03-2013 |
20130002311 | TRANSMIT DRIVER CIRCUIT - A driver circuit includes a differential input, a differential output, a bias node, a first T-coil having a first node coupled to the negative output node and a second node coupled to a source of supply voltage, a second T-coil having a first node coupled to the positive output node and a second node coupled to the source of supply voltage, a first transistor having a current path coupled between the center tap of the first T-coil and a first intermediate node, a second transistor having a current path coupled between the center tap of the second T-coil and a second intermediate node, a third transistor having a current path coupled between the first intermediate node and ground, and a fourth transistor having a current path coupled between the second intermediate node and ground. | 01-03-2013 |
20130002312 | DRIVER CIRCUIT, METHOD OF MANUFACTURING THE DRIVER CIRCUIT, AND DISPLAY DEVICE INCLUDING THE DRIVER CIRCUIT - Provided are a driver circuit which suppresses damage of a semiconductor element due to ESD in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit. By providing a protection circuit in a driver circuit to be electrically connected to a semiconductor element in the driver circuit, and by forming, at the same time, a transistor which serves as the semiconductor element in the driver circuit and a transistor included in the protection circuit in the driver circuit, damage of the semiconductor element due to ESD is suppressed in the process of manufacturing the driver circuit. Further, by using an oxide semiconductor film for the transistor included in the protection circuit in the driver circuit, leakage current in the protection circuit is reduced. | 01-03-2013 |
20130002313 | SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT - In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity. | 01-03-2013 |
20130009672 | ENERGY-RECYCLING RESONANT DRIVE CIRCUITS FOR SEMICONDUCTOR DEVICES - A transistor driver includes an inductor coupled to a gate terminal of a transistor and a switching circuit coupled to the inductor and configured to charge a capacitance at a gate terminal of the transistor from a source via the inductor responsive to a first state of a control input, to block discharge of the charged capacitance responsive to a voltage at the gate terminal and to return charge from the charged capacitance to the source responsive to transition of the control input to a second state. The switching circuit may include a switch coupled in series with the inductor and the source and configured to conduct responsive to transition of the control input to the first state and a rectifier coupled in series with the inductor and the source and configured to block discharge of the charged capacitance responsive to the voltage at the gate terminal. | 01-10-2013 |
20130009673 | ADAPTIVE BODY BIAS CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME - An adaptive body bias (ABB) circuit and a semiconductor integrated circuit (IC) having the ABB circuit include: a logic circuit performing logic calculations, a clock line through which a clock signal is transmitted to the logic circuit, and at least one bias line through which a bias voltage is applied to the logic circuit, wherein the bias voltage is applied to a body of a metal oxide semiconductor (MOS) transistor constituting the logic circuit, and the bias line is arranged at a predetermined distance from the clock line to shield the clock signal from crosstalk due to other adjacent signal lines. | 01-10-2013 |
20130009674 | HIGH TEMPERATURE HALF BRIDGE GATE DRIVER - A half bridge gate driving circuit for providing gate driving circuits in a bi-hecto celcius (200 degrees celcius) operating environment having multiple functions including combinations of multiple level logic inputs, noise immunity, fault protection, overlap protection, pulse modulation, high-frequency modulation with transformer based isolation, high-frequency demodulation back to pulse width modulation, deadtime generator, level shifter for high side transistor, overcurrent protection, and undervoltage lockout. | 01-10-2013 |
20130009675 | GATE DRIVER - A gate driver of a switching element Q | 01-10-2013 |
20130009676 | BIDIRECTIONAL SWITCHING DEVICE AND BIDIRECTIONAL SWITCHING CIRCUIT USING THE SAME - A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode. | 01-10-2013 |
20130015886 | High Voltage, High temperature Semiconductor Driver for Switching Power semiconductor devicesAANM Johnson; Brant TureAACI ConcordAAST MAAACO USAAGP Johnson; Brant Ture Concord MA US - The application discloses a novel way to provide an integrated circuit driver interface between a control device and semiconductor power devices that benefit from the drivers unique ability to provide positive and negative voltages that improve the switching characteristics of the power devices. This invention's unique construction allows it to operate at high voltages and high temperature to the benefit of multiple power conversion applications. | 01-17-2013 |
20130015887 | DRIVE CIRCUIT WITH ADJUSTABLE DEAD TIMEAANM Piselli; MarcoAACI PaduaAACO ITAAGP Piselli; Marco Padua ITAANM Massaro; SimoneAACI VeneziaAACO ITAAGP Massaro; Simone Venezia ITAANM Lenz; MichaelAACI ZornedingAACO DEAAGP Lenz; Michael Zorneding DEAANM Puerschel; MarcoAACI MunichAACO DEAAGP Puerschel; Marco Munich DEAANM Graovac; DusanAACI MunichAACO DEAAGP Graovac; Dusan Munich DE - A drive circuit includes a first input terminal configured to receive a first input signal, a first output terminal configured to provide a first drive signal, a second output terminal configured to provide a second drive signal, and a mode selection terminal configured to have a mode selection element connected thereto. The drive circuit is configured to generate the first and second drive signals dependent on the first input signal such that there is a dead time between a time when one of the first and second drive signals assumes an off-level and a time when the other one of the first and second drive signals assumes an on-level, and evaluate at least one electrical parameter of the mode selection element and is configured to adjust a first signal range of the first drive signal and a second signal range of the second drive signal dependent on the evaluated parameter and to adjust the dead time dependent on the evaluated parameter. | 01-17-2013 |
20130015888 | SEMICONDUCTOR DEVICE, START-UP CIRCUIT, OPERATING METHOD FOR THE SAMEAANM Chan; Wing-ChorAACI Hsinchu CityAACO TWAAGP Chan; Wing-Chor Hsinchu City TWAANM Hu; Chih-MinAACI Kaohsiung CityAACO TWAAGP Hu; Chih-Min Kaohsiung City TWAANM Chen; Li-FanAACI Hsinchu CityAACO TWAAGP Chen; Li-Fan Hsinchu City TW - A semiconductor device, a start-up circuit, and an operating method for the same are provided. The start-up circuit comprises a semiconductor unit, a first circuit, a second circuit, a voltage input terminal and a voltage output terminal. The first circuit is constituted by one diode or a plurality of diodes electrically connected to each other in series. The second circuit is constituted by one diode or a plurality of diodes electrically connected to each other in series. The semiconductor unit is coupled to a first node between the first circuit and the second circuit. The voltage input terminal is coupled to the semiconductor unit. The voltage output terminal is coupled to a second node between the semiconductor unit and the first circuit. | 01-17-2013 |
20130015889 | THRESHOLD VOLTAGE BASED POWER TRANSISTOR OPERATION - A system and method for operating a power transistor. Parasitic impedances naturally present in a circuit board or other interconnect structures exhibit a parasitic impedance effective to generate a parasitic voltage signal in response to operating the power transistor. The parasitic voltage signal is monitored in order to better control the power transistor. In particular, the threshold voltage of the power transistor can be determined and used to more optimally control the power transistor. | 01-17-2013 |
20130021067 | METHOD FOR DRIVING IGBT - Provided is a method for driving an IGBT, wherein a transient voltage applied across the IGBT is reduced by reducing a slope of a gate-emitter voltage of IGBT. | 01-24-2013 |
20130027092 | Digital Output Driver - A digital output driver is disclosed. In accordance with some embodiments of the present disclosure, a digital output driver may comprise at least one of an output-source PMOS configured to source current during at least a portion of a low-to-high transition of a digital output, wherein the output-source PMOS is configured to mirror a reference PMOS configured to be driven at its gate by a first amplifier and to be biased by a first reference current, and an output-sink NMOS configured to sink current during at least a portion of a high-to-low transition of the digital output, wherein the output-sink NMOS is configured to mirror a reference NMOS configured to be driven at its gate by a second amplifier and to be biased by a second reference current. | 01-31-2013 |
20130038355 | OUTPUT DRIVING CIRCUIT AND TRANSISTOR OUTPUT CIRCUIT - The present invention relates to an output driving circuit and a transistor output circuit. In accordance with an embodiment of the present invention, an output driving circuit including: a first driving circuit unit driven according to on operation of a first switch to supply high voltage power source to a gate of an output transistor; a second driving circuit unit driven by a one-shot pulse generated according to on operation of a second switch, which operates complementarily with the first switch, to discharge a gate-source capacitance of the output transistor; and an output driving voltage clamping unit disposed between a high voltage power source terminal and the gate of the output transistor in parallel with the first driving circuit unit to maintain a gate potential of the output transistor discharged according to the on operation of the second switch is provided. | 02-14-2013 |
20130038356 | OUTPUT DRIVING CIRCUIT AND TRANSISTOR OUTPUT CIRCUIT - Disclosed herein are an output driving circuit and a transistor output circuit. The output driving circuit includes: a reference voltage generating unit generating a reference voltage; a level shift unit including a transistor latch and turning off a first transistor of a driving circuit or driving the first transistor; a driving circuit unit including the first transistor that is driven to apply power to a gate of an output transistor and a second transistor that is driven complementarily to the first transistor to lower a gate voltage of the output transistor and drive the output transistor; and an withstand voltage protecting unit that is driven by receiving a reference voltage and includes a first withstand voltage protecting unit for protecting transistors of the transistor latch and the first transistor for stable operations thereof and a second withstand voltage protecting unit for protecting the output transistor for a stable operation thereof. | 02-14-2013 |
20130038357 | DYNAMIC SWITCH DRIVER FOR LOW-DISTORTION PROGRAMMABLE-GAIN AMPLIFIER - A switching circuit for switching a time-varying input signal, the switching circuit comprising: at least one switch including a N-channel MOSFET and a P-channel MOSFET, each having a gate configured to receive a drive signal to change the ON/OFF state of the switch; and a drive circuit configured and arranged so as to selectively apply a pair of drive signals to change the ON/OFF state of the switch, the drive circuit being configured and arranged to generate the drive signals as a function of (a) a pair DC signal components sufficient to change the ON/OFF state of the switch and (b) a pair of time-varying signal components as at least a partial replica of the signal present on the source terminal of each MOSFET so that when applied with the DC signals to the gates of the re-channel MOSFET and p-channel MOSFET respectively, the drive signals will be at the appropriate level to maintain the ON/OFF state of the switch and keep the gate-source voltages of each MOSFET within the gate-source breakdown limit of the MOSFETs. | 02-14-2013 |
20130063186 | Switching Regulator With Optimized Switch Node Rise Time - A driver circuit for controlling a high-side power switch of a switching regulator includes: a logic circuit configured to generate a gate control signal for turning on the power switch; a diode having coupled to a first power supply voltage; a capacitor having a first electrode coupled to the cathode of the diode and a second electrode coupled to the switching output voltage; and a delay circuit configured to receive the gate control signal and to generate a delayed gate control signal. In operation, the capacitor is precharged to about the first power supply voltage. When the power switch is turned on, a first output drive transistor is turned on to distribute the charge stored on the capacitor to the gate terminal of the high-side power switch, and after the predetermined delay, a second output drive transistor is turned on to drive the output node to a high supply voltage. | 03-14-2013 |
20130063187 | SOLID-STATE SWITCH DRIVING CIRCUIT FOR VEHICLE - Disclosed herein is a solidstate switch driving circuit for a vehicle. The solidstate switch driving circuit includes an oscillation circuit, a constant voltage circuit, a first Field Effect Transistor (FET), a second FET, a third FET configured, a first time constant circuit, a first time constant circuit, a reverse voltage protection diode, a solidstate power switch, and a second time constant circuit. The first time constant circuit is connected to the drain of the second FET and the drain of the third FET. The reverse voltage protection diode has an N pole and a P pole. The solidstate power switch selectively turns on and off power applied to the load. The second time constant circuit has one side connected to the first time constant circuit and the reverse voltage protection diode, and another side connected to a gate of the solidstate power switch. | 03-14-2013 |
20130063188 | POWER MODULE - A power module includes: a drive circuit for driving an IGBT of a semiconductor element; a protection circuit for performing operation for protection of the IGBT if the collector current of the IGBT has reached a trip level; and a control power source voltage detection circuit for detecting a control power source voltage to be supplied to the drive circuit. The protection circuit changes a sense resistor from a resistor to a series circuit with resistors and if the control power source voltage drops to a level lower than a predetermined value, thereby lowering the trip level. | 03-14-2013 |
20130063189 | GATE CONTROL CIRCUIT - An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor. | 03-14-2013 |
20130069694 | SEMICONDUCTOR DEVICE - A semiconductor device may be provided with a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, at least one electrode disposed on a surface of the insulating film, and a voltage applying circuit configured to apply a first voltage to the at least one electrode. The semiconductor substrate may be provided with a cell region and a non-cell region adjacent to the cell region. The cell region is provided with a semiconductor element, and the non-cell region is provided with a withstand voltage structure. The insulating film may be disposed on a surface of the non-cell region. The at least one electrode may be electrically insulated from the semiconductor substrate. The voltage applying circuit may apply the first voltage to the electrode during at least a part of a first period in which a second voltage is not applied to the semiconductor element. | 03-21-2013 |
20130076405 | SYSTEMS AND METHODS FOR DISCHARGING BUS VOLTAGE USING SEMICONDUCTOR DEVICES - Systems, apparatus, and methods are provided for discharging a voltage bus using a transistor. An exemplary gate drive circuit associated with the transistor includes a pulse generation module having an input and an output and a switched capacitance arrangement coupled between the output and a reference voltage node. The pulse generation module is configured to generate a voltage pulse at its output in response to a control signal at the input. In one embodiment, the control signal results in the voltage pulse having a duty cycle that operates the transistor associated with the gate drive circuit in a linear mode when the switched capacitance arrangement is activated. | 03-28-2013 |
20130076406 | ISOLATED GATE DRIVER ADAPTED FOR PWM-BASED SWITCHING POWER SUPPLY - An isolated gate driver including a driving control circuit, an isolated transformer, an anti-circuit and a secondary processing circuit is provided. The driving control circuit is configured to generate a driving PWM signal for driving a power switch tube. The isolated transformer has a primary winding and a secondary winding. The anti-circuit is connected between the driving control circuit and the primary winding of the isolated transformer, and is configured to suppress a variation of an induced voltage in the secondary winding of the isolated transformer when a duty cycle of the driving PWM signal is sharply decreased. The secondary processing circuit is connected in parallel with the secondary winding of the isolated transformer, and is configured to perform a voltage clamping action on a gate-source voltage of the power switch tube when the duty cycle of the driving PWM signal is sharply decreased. | 03-28-2013 |
20130076407 | CIRCUIT SYSTEM HAVING AT LEAST TWO INVERTER MODULES CONNECTED IN PARALLEL, METHOD FOR CONNECTING AT LEAST TWO INVERTER MODULES IN PARALLEL AND CIRCUIT SUBSTRATE FOR A GATE DRIVER CIRCUIT OF AN INVERTER MODULE - A circuit system having at least two inverter modules connected in parallel, each of which includes an inverter circuit having power semiconductor circuit breakers and a gate driver circuit for controlling the power semiconductor circuit breakers; the gate driver circuit of a first inverter module includes a signal transmission circuit via which a control signal is transmittable from a low-voltage side to a high-voltage side, and a first driver output terminal which is electrically connected to the first driver input terminals of the gate driver circuits of the inverter modules connected in parallel, and via which the high-voltage side control signal or a control signal deduced therefrom is transmittable to the gate driver circuits of the inverter modules connected in parallel. The power semiconductor circuit breakers of the inverter circuits of the inverter modules, connected in parallel to the first inverter module, are controlled based on the transmitted control signal. | 03-28-2013 |
20130082746 | VERTICAL TRANSISTOR HAVING REDUCED PARASITIC CAPACITANCE - A transistor includes a substrate and an electrically conductive material layer stack positioned on the substrate. The electrically conductive material layer stack includes a reentrant profile. A first electrically insulating material layer positioned is in contact with a first portion of the electrically conductive material layer stack. A second electrically insulating material layer is conformally positioned in contact with the first electrically insulating layer, and conformally positioned in contact with a second portion of the electrically conductive material layer stack, and conformally positioned in contact with at least a portion of the substrate. | 04-04-2013 |
20130088266 | SEMICONDUCTOR DEVICE - A semiconductor device includes first and second power elements and first and second driving circuits. The semiconductor device also includes a resistor having a first end connected to the first power element and a second end connected to the first driving circuit. Furthermore, the semiconductor device includes a switching element connected between the first driving circuit and the first end of the resistor, and turned ON and OFF. When a first input signal is an OFF signal, the first driving circuit causes the first power element to become turned OFF, and when the first input signal is an OFF signal or when a second input signal is an ON signal, the switching element is turned ON. | 04-11-2013 |
20130093474 | SYSTEMS AND METHODS FOR DRIVING TRANSISTORS WITH HIGH THRESHOLD VOLTAGES - System and method are provided for driving a transistor. The system includes a floating-voltage generator, a first driving circuit, and a second driving circuit. The floating-voltage generator is configured to receive a first bias voltage and generate a floating voltage, the floating-voltage generator being further configured to change the floating voltage if the first bias voltage changes and to maintain the floating voltage to be lower than the first bias voltage by a first predetermined value in magnitude. The first driving circuit is configured to receive an input signal, the first bias voltage and the floating voltage. The second driving circuit is configured to receive the input signal, a second bias voltage and a third bias voltage, the first driving circuit and the second driving circuit being configured to generate an output signal to drive a transistor. | 04-18-2013 |
20130099831 | GATE DRIVE CIRCUIT AND ASSOCIATED METHOD - A method of driving a number of series connected active power semiconductor groups, wherein each of the active power semiconductor groups includes one or more gate oxide-isolated active power semiconductor devices. The method includes generating a current pulse, providing the current pulse to a primary portion of a transformer unit and in response thereto causing a number of reflected current pulses to be reflected at a secondary portion of the transformer unit, and transferring and latching each of the reflected current pulses to create a respective latched gate drive signal, and providing each respective latched gate drive signal to an associated one of the active power semiconductor groups for driving the one or more gate oxide-isolated active power semiconductor devices of the associated one of the active power semiconductor groups. Also, a gate drive circuit that implements the method. | 04-25-2013 |
20130099832 | Current Driving Circuit and Display Device Using The Current Driving Circuit - A current drive circuit which can improve a rate for signal writing and a driving rate of an element even when a signal current is small, and a display device using the current drive circuit are provided. The current drive circuit for supplying a signal current to a node of a driven circuit through a signal line includes a precharge function for supplying a precharge voltage to the node through the signal line and the precharge function includes a supply function for supplying the precharge voltage to the node and the signal line prior to supplying the signal current. | 04-25-2013 |
20130106468 | GATE DRIVER | 05-02-2013 |
20130106469 | CONTROL CONTACT DRIVING SYSTEM | 05-02-2013 |
20130106470 | CONTROL DEVICE | 05-02-2013 |
20130113524 | FLEXIBLE LOW POWER SLEW-RATE CONTROLLED OUTPUT BUFFER - An output buffer includes a pullup driver, a pulldown driver, and an output stage. The pullup driver has a drive control input, and an output for providing a pullup drive signal in a push-pull mode in response to receiving a first drive control signal on the drive control input, and in a current limited mode in response to receiving a second drive control signal on said drive control input. The pulldown driver has a drive control input, and an output for providing a pulldown drive signal in the push-pull mode in response to receiving a third drive control signal on the drive control input, and in the current limited mode in response to receiving a fourth drive control signal on the drive control input. The output stage provides a voltage on an output terminal in response to the pullup and pulldown drive signals. | 05-09-2013 |
20130113525 | SEMICONDUCTOR DEVICE AND OPERATION MODE SWITCH METHOD - A semiconductor device includes a first internal terminal, a first transistor, a second transistor, an oscillator including an output terminal to output a clock signal, and a comparator coupled to a first internal terminal, and that compares a potential of the first internal terminal when the first internal terminal is coupled to the first reference potential with a potential of the first internal terminal when the first internal terminal is coupled to a second reference potential, an external terminal being connectable to the first internal terminal, and a second internal terminal being coupled to the external terminal, and that receives an input signal through the external terminal. Each of the first control terminal and the second control terminal is coupled to the output terminal to commonly receive the clock signal. The first transistor and the second transistor exclusively operate according to the clock signal. | 05-09-2013 |
20130113526 | CONTROL SIGNAL GENERATION CIRCUIT, CHARGE PUMP DRIVE CIRCUIT, CLOCK DRIVER, AND DRIVE METHOD OF CHARGE PUMP - A control signal generation circuit which generates a control signal for controlling a gate of an MOS transistor, comprises a first switching part connected to a current source and the gate and controlled based on an input signal; and a second switching part connected to the current source and the gate and controlled based on an input signal and control signal, wherein a voltage value of the control signal changes based on the input signal, and a slant of the voltage value with respect to time is switched to become smaller after the voltage value exceeds a threshold voltage of the MOS transistor compared with when the voltage value equals to or less than the threshold voltage of the MOS transistor. | 05-09-2013 |
20130120029 | HIGH-SPEED PRE-DRIVER AND VOLTAGE LEVEL CONVERTER WITH BUILT-IN DE-EMPHASIS FOR HDMI TRANSMIT APPLICATIONS - In an example, a high-speed pre-driver and voltage level converter with built-in de-emphasis for HDMI transmit applications is provided. An exemplary integrated circuit includes a serializer, a pre-driver coupled to receive a differential input from the serializer, and a driver. The pre-driver includes all-p-type metal-oxide-silicon (PMOS) cross-coupled level converter comprising four PMOS transistors and two de-emphasis PMOS transistors forming a de-emphasis tap coupled to the output of the cross-coupled level converter. The driver is coupled to the pre-driver output and is configured to receive a differential input from the pre-driver. | 05-16-2013 |
20130120030 | SEMICONDUCTOR DEVICE MEASURING VOLTAGE APPLIED TO SEMICONDUCTOR SWITCH ELEMENT - A semiconductor device includes a semiconductor switch element including a first conduction electrode and a second conduction electrode, and a voltage measurement circuit for measuring voltage across the first conduction electrode and second conduction electrode of the semiconductor switch element. The voltage measurement circuit includes a diode element connected parallel to the semiconductor switch element to restrict the voltage applied in the conducting direction of the semiconductor switch element to a predetermined value, a control switch connected in series with the diode element, and a switch control unit setting the control switch at an OFF state when the semiconductor switch element is at an OFF state, and setting the control switch at an ON state when the semiconductor switch element is at an ON state. | 05-16-2013 |
20130127500 | POWER SEMICONDUCTOR DEVICE DRIVING CIRCUIT - A power semiconductor device driving circuit includes a gate control terminal, which is provided at a position separated from a drain terminal of a power semiconductor device by a predetermined distance so that electric discharge is generated between the drain terminal and the gate control terminal at the time of generation of surge. A surge voltage is applied to the gate control terminal due to this discharge, the gate of the power semiconductor device is charged to turn on and absorb the surge energy. Thus it becomes possible to suppress the surge voltage applied to the drain terminal and prevent breakdown of the power semiconductor device. | 05-23-2013 |
20130147525 | DRIVE CIRCUIT FOR INSULATED GATE SWITCHING ELEMENT - Embodiments of the invention provide a drive circuit including: a constant current source that generates a constant current; a switching circuit that connects a gate of the insulated gate switching element to a power supply potential side via the constant current source when turning the insulated gate switching element ON and connects the gate of the insulated gate switching element to a reference potential side via a discharge circuit when turning the insulated gate switching element OFF; a gate voltage detection circuit that detects a gate voltage of the insulated gate switching element; and a current mode selection circuit that switches a mode of the constant current source from a normal current mode to a low current consumption mode when detecting, based on the gate voltage detected by the gate voltage detection circuit, that the insulated gate switching element is turned ON. | 06-13-2013 |
20130162303 | PROPORTIONAL BIAS SWITCH DRIVER CIRCUIT WITH CURRENT TRANSFORMER - A switch bias system is provided that includes a bipolar junction transistor (BJT) switch comprising a base, emitter, and collector; an energy storage circuit coupled to the collector of the BJT, the energy storage circuit supplying current flow to the collector of the BJT; a current transformer circuit coupled to the emitter, the current transformer circuit configured to sense current flow through the emitter of the BJT switch; and a proportional bias circuit configured to generate a bias current to the base of the BJT switch, the bias current set to a proportion of the sensed current flow through the emitter of the BJT switch. | 06-27-2013 |
20130162304 | Gate Line Driver Capable Of Controlling Slew Rate Thereof - A gate line driver including an output buffer configured to receive a driving signal and output a driving voltage, and a slew rate controller including at least one capacitor and a switch connected in series to the at least one capacitor, the switch configured to selectively, electrically connect the at least one capacitor between an input terminal and an output terminal of the output buffer according to a slew rate control signal to control a slew rate of the output buffer. | 06-27-2013 |
20130162305 | SEMICONDUCTOR DEVICE, IMAGE DISPLAY DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE - To provide a semiconductor device with reduced power consumption that includes a selection transistor. To provide a semiconductor device capable of high-speed operation without increasing a power supply potential. A buffer circuit connected to a gate line has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential in response to a selection signal. Specifically, a bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side in the buffer circuit. Further, the bootstrap circuit boosts the potential when the gate line is selected, and does not boost the potential when the gate line is not selected. | 06-27-2013 |
20130162306 | METHOD FOR DRIVING SEMICONDUCTOR DEVICE - Provided is a method for driving a semiconductor device, which allows a reduction in scale of a circuit, reduce the power consumption, and increase the speed of reading data. An H level (data “1”) potential or an L level (data “0”) potential is written to a node of a memory cell. Potentials of a source line and a bit line are set to the same potential at an M level (L level06-27-2013 | |
20130169320 | GATE DRIVER WITH DIGITAL GROUND - Various exemplary embodiments relate to gate driver circuitry that compensate for parasitic inductances. Input buffers in the gate driver are grounded to an exposed die pad. Grounding may involve either a downbond or conductive glue. | 07-04-2013 |
20130169321 | INTEGRATED CIRCUIT (IC), ADAPTIVE POWER SUPPLY USING IC CHARACTERISTICS AND ADAPTIVE POWER SUPPLY METHOD ACCORDING TO IC CHARACTERISTICS, ELECTRONIC DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD OF IC - Embodiments disclose an integrated circuit (IC) including a power input unit, which receives power from an external power supply, a core, which is driven by the power input through the power input unit, and a controller, which determines characteristics of the core and controls the external power supply to supply the power according to the determined characteristics. | 07-04-2013 |
20130169322 | EFFICIENT REDUCTION OF ELECTROMAGNETIC EMISSION IN LIN DRIVER - A Local Interconnect Network (LIN) driver circuit employs a charging/discharging current applied to the gate of a driver transistor coupled to an LIN bus. The charging current includes a constant charging current and an additional soft charging current, whereas the discharging current includes a constant discharging current and an additional soft discharging current. As a result of the soft charge/discharge components, there is a significant reduction in electromagnetic emission on the LIN bus. | 07-04-2013 |
20130181748 | METHOD AND APPARATUS FOR DRIVING A VOLTAGE CONTROLLED POWER SWITCH DEVICE - A driving circuit for at least one voltage controlled power switch device comprises a driver signal generating circuit and a trigger signal generating circuit adapted to generate trigger signals for said voltage controlled power switch device (PT). The trigger signal generating circuit includes a first driving transistor, and at least one energy buffer component coupled between the trigger signal generating circuit and the control electrode of said power switch device (PT). | 07-18-2013 |
20130181749 | DRIVE CIRCUIT FOR SWITCHING ELEMENT - The drive circuit is for turning on and off a switching element having an open/close control terminal, an input terminal and an output terminal by moving electrical charge in the open/close control terminal in accordance with an on-manipulation command and an off-manipulation command received from outside. The drive circuit includes an active gate control means for changing a moving speed of the electrical charge midway between when movement of the electrical charge is started and when the movement is completed, and a determination means for making at least one of a determination on a change timing to change the moving speed and a determination on whether or not a change of the moving speed by the active gate control means should be made. | 07-18-2013 |
20130181750 | ACTIVE GATE DRIVE CIRCUIT - Exemplary embodiments are directed to a gate drive circuit and a method for controlling a gate-controlled component. The gate drive circuit includes a PI controller that receives an input reference signal (v | 07-18-2013 |
20130187683 | LINEARIZING FIELD EFFECT TRANSISTORS IN THE OHMIC REGION - Apparatus and methods are disclosed related to using one or more field effect transistors as a resistor. One such apparatus can include a field effect transistor (FET), averaging resistors and a bidirectional current source. The averaging resistors can apply an average of a voltage at the source of the FET and a voltage at the drain of the FET to the gate of the field effect transistor. The bidirectional current source can turn the FET on and off. The FET can operate in the ohmic region when on. Such an apparatus can improve the linearity of the FET as a resistor, for example, at lower frequencies near or at direct current (DC). In some implementations, the apparatus can include one or more current sources to remove an offset introduced by the bidirectional current source at the source and/or the drain of the FET. | 07-25-2013 |
20130187684 | FAST GATE DRIVER FOR SILICON CARBIDE JUNCTION FIELD-EFFECT (JFET) SWITCHING DEVICES - Devices and techniques are described for selectively driving an electronically controllable switching device between on and off states. A first signal driver provides a respective output selectively switchable between “on” and “off” states responsive to an input signal. A second signal driver likewise provides a respective output selectively switchable between “on” and “off” states responsive to the input signal. Each of the respective outputs is switchable to an overriding isolated state responsive to an enable signal. The outputs are combined at a driving node, such that only one of the outputs drives the node at any given time. Additionally, one of the outputs is coupled to the output node through a current limiting resistor. Accordingly for each switching cycle, the switching device can be pre-charged by a high-current output, then held on for a predetermined period by a controlled-current output, and held off during other periods. | 07-25-2013 |
20130194006 | DEAD TIME GENERATION CIRCUIT AND LOAD DRIVING APPARATUS - A dead time generation circuit includes a high-side control signal generation circuit and a low-side control signal generation circuit which are separate circuits. The high-side control signal generation circuit inverts a level of a high-side control signal from a driving prohibition level to a driving permission level when a time corresponding to a first clock number has elapsed in a state where a control signal keeps a first level after the control signal transitions from a second level to the first level. The low-side control signal generation circuit inverts a level of a low-side control signal from the driving prohibition level to the driving permission level when a time corresponding to a second clock number has elapsed in a state where the control signal keeps the second level after the control signal transitions from the first level to the second level. | 08-01-2013 |
20130200927 | Over-Temperature Protected Transistor - A circuit for controlling the switching operation of a transistor is described. A gate driver circuit is operably connected to a control electrode of the transistor and is configured to charge and discharge the control electrode to switch the transistor on and off, respectively, in accordance with a control signal. The charging and discharging of the control electrode is done such that the corresponding transitions in the load current and the output voltage are smooth with a defined slope. A controllable switch is connected to the control electrode such that, when the switch closes, the control electrode is quickly discharged via the switch thus quickly switching off the transistor. A control logic circuit is configured to close the controllable switch for switching off the transistor when at least one of a number of conditions holds true. | 08-08-2013 |
20130200928 | External Power Transistor Control - The present document relates to the control of an external power transistor. In particular, the present document relates to a method and system for avoiding ringing at the external power transistor subsequent to switching of the external power transistor. A driver circuit to generate a drive signal for switching a driven switch between an off-state and an on-state is described. The driver circuit comprises a drive signal generation unit configured to generate a high drive signal triggering the driven switch to switch to the on-state; wherein an output resistance of the driver circuit is adjustable; an oscillation detection unit to detect a degree of oscillation on the drive signal; and a resistance control unit to adjust the output resistance of the driver circuit based on the degree of oscillation on the drive signal. | 08-08-2013 |
20130200929 | POWER MODULE AND OUTPUT CIRCUIT - A power module ( | 08-08-2013 |
20130207695 | POWER SUPPLY CIRCUITS WITH DISCHARGE CAPABILITY AND METHODS OF OPERATING SAME - A power supply circuit includes a sequence control circuit configured to generate at least one control signal in response to a main power source, a voltage regulator circuit configured to be coupled to the main power source and to selectively generate at least one power supply voltage for a chipset from the main power source in response to the at least one control signal and a discharge circuit configured to discharge the voltage regulator circuit responsive to the at least one control signal. | 08-15-2013 |
20130214821 | HIGH VOLTAGE SEMICONDUCTOR ELEMENT AND OPERATING METHOD THEREOF - A high voltage semiconductor element and an operating method thereof are provided. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor (HVMOS) and a NPN type electro-static discharge bipolar transistor (ESD BJT). The HVMOS has a drain and a source. The NPN type ESD BJT has a first collector and a first emitter. The first collector is electronically connected to the drain, and the first emitter is electronically connected to the source. | 08-22-2013 |
20130214822 | GATE DRIVE CIRCUIT - A gate drive circuit of the present invention is a gate drive circuit for driving an insulated gate switching element, which comprises a control drive circuit for applying a driving voltage to a control terminal of the switching element at a predetermined timing, and a voltage monitoring circuit for monitoring both a first voltage which is a power supply voltage of the control drive circuit and a second voltage which negatively biases the control terminal of the switching element, and in the gate drive circuit, the control drive circuit cuts off an output when at least one of the first and second voltages monitored by the voltage monitoring circuit becomes lower than a threshold value. It is an object of the present invention to provide an insulated gate switching element which can suppress wrong ON. | 08-22-2013 |
20130214823 | GATE DRIVING CIRCUIT - A gate driving circuit includes a gate control circuit and a gate voltage limit circuit. The gate control circuit establishes or breaks electrical continuity of a gate voltage supply path from a power source line to a gate terminal of a transistor in response to an on-command and an off-command. The gate voltage limit circuit limits a gate voltage of the transistor to be less than or equal to a first voltage in response to the on-command at least in a period until a determination of whether an electric current greater than a fault criterion value flows to the transistor ends and then limits the gate voltage to be less than or equal to a second voltage. | 08-22-2013 |
20130214824 | DRIVING CIRCUIT - A driving circuit that drives a semiconductor device includes first to sixth semiconductor devices. A first state and a second state are provided in one cycle in which a voltage is applied to a control terminal of the semiconductor device. In the first state, the first semiconductor device is closed, the third and fourth semiconductor devices are opened, and when the second semiconductor device is structured to have a semiconductor switch, the semiconductor switch is closed. In the second state, the first semiconductor device is opened, and the third and fourth semiconductor devices are closed. | 08-22-2013 |
20130214825 | DRIVE UNIT FOR DRIVING VOLTAGE-DRIVEN ELEMENT - A drive unit comprises a switching circuit and an abnormal signal generating circuit. The switching circuit is configured to be connected to an external time generating circuit, and is configured to switch a driving condition relating to a driving voltage of a voltage-driven element in a transitional period between a driving state and a non-driving state of the voltage-driven element based on a measurement time which is measured by using of the time generating circuit. The abnormal signal generating circuit is configured to generate an abnormal signal when an accurate measurement of the time using the time generating circuit is not executed. | 08-22-2013 |
20130222015 | LEVEL SHIFTERS FOR IO INTERFACES - An integrated circuit which includes a pre-driver configured to receive a first high supply voltage and to generate an input signal and at least one post-driver configured to receive at least one second high supply voltage and to receive the input signal. The at least one post-driver includes an input node configured to receive the input signal and an output node configured to output an output signal. The at least one post-driver further includes a pull-up transistor configured to be in a conductive state during an entire period of operation, and a pull-down transistor. The at least one post-driver further includes at least one diode-connected device coupled between the pull-down transistor and the output node. Each post-driver of the at least one post-driver is configured to supply the output signal having a second voltage level corresponding to a high logic level which is higher than an input voltage level. | 08-29-2013 |
20130229207 | FLOATING GATE DRIVER WITH BETTER SAFE OPERATION AREA AND NOISE IMMUNITY, AND METHOD FOR LEVEL SHIFTING A SWITCH SIGNAL - A floating gate driver includes a level shifter to transmit a set signal and a reset signal to a first output terminal and a second output terminal, respectively. The level shifter includes a first high-voltage transistor, a first current limiter and a first input transistor connected in series between the first output terminal and a ground terminal, and a second high-voltage transistor, a second current limiter and a second input transistor connected in series between the second output terminal and the ground terminal, and the first and second high-voltage transistors are remained on. With this arrangement, the level shifter can transmit signals from low side to high side under better safe operating area and has better noise immunity. | 09-05-2013 |
20130229208 | DRIVE CIRCUIT FOR SWITCHING ELEMENTS - A first-path connects an input-terminal and an output-terminal of a high-potential-side switching-element and includes a high-potential-side rectifying-device and a high-potential-side passive-element. A second-path connects the output-terminal of the high-potential-side switching-element and the output-terminal of a low-potential-side switching-element and includes a low-potential-side rectifying-device and a low-potential-side passive-element. A high-potential-side applying-unit applies voltage to a connecting point between the high-potential-side rectifying-device and the high-potential-side passive-element. A high-potential-side determining-unit determines that an overcurrent is flowing between the input-terminal and the output-terminal of the high-potential-side switching-element by using a first-value. A limiting-unit limits a current between the low-potential-side rectifying-device and the output-terminal of the high-potential-side switching-element if the overcurrent is flowing. A low-potential-side applying-unit applies voltage to a connecting point between the low-potential-side rectifying-device and the low-potential-side passive-element. A low-potential-side determining-unit determines that an overcurrent is flowing between the input-terminal and the output-terminal of the high-potential-side or low-potential-side switching element by using a second-value. | 09-05-2013 |
20130229209 | DRIVE UNIT FOR SWITCHING ELEMENT - A drive unit includes a charging unit which charges an opening/closing control terminal of a switching element to switch a drive state. The switching element includes a sensing terminal which outputs a minute current having a correlation with current flowing between input and output terminals of the switching element. The sensing terminal and either of the output terminal or a member having a potential equal to that of the output terminal are connected via a sensing resistor. The drive unit further includes an active gate control unit which changes a charge rate based on comparison of sensing voltage, which is a potential difference across the sensing resistor, or a rate of change of the sensing voltage with a specified value. The specified value is set based on individual-difference information of the switching element which indicates a characteristic, which affects the sensing voltage, when the drive state is switched. | 09-05-2013 |
20130234762 | CIRCUIT INCLUDING A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE HAVING A GRAPHENE CHANNEL, AND METHOD OF OPERATING THE CIRUCIT - A circuit includes a negative differential resistance (NDR) device which includes a gate and a graphene channel, and a gate voltage source which modulates a gate voltage on the gate such that an electric current through the graphene channel exhibits negative differential resistance. | 09-12-2013 |
20130241603 | Current limit circuit apparatus - The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current. | 09-19-2013 |
20130241604 | POWER MODULE INCLUDING LEAKAGE CURRENT PROTECTION CIRCUIT - A power module including a power device and a periphery circuit configured to suppress a leakage current in the power device. The periphery circuit includes a leakage current detection circuit configured to detect a leakage current from the power device and control operation of the power device based on a result of the detection. The leakage current detection circuit including an input terminal connected to the power device, a plurality of NMOS transistors, a plurality of PMOS transistors connected to the plurality of NMOS transistors, and a comparator. | 09-19-2013 |
20130241605 | Method for compensation of manufacturing tolerances of at least one electric parameter of a power transistor and associated system - The system ( | 09-19-2013 |
20130241606 | INTEGRATED CIRCUIT AND A METHOD OF POWER MANAGEMENT OF AN INTEGRATED CIRCUIT - An integrated circuit includes a plurality of power gating elements for controlling power applied to a first module which is in a powered off state, while a second module is in a powered on state, the second module being coupled to receive at least one signal from the first module when the first module is powered on. A a synchronization controller is provided for controlling the power gating elements to ramp up the power gated to the first module in order to power it up and, for a time while the power gated to the first module is below a first level, reducing the power gated to the second module, and for a time when the power gated to the first module is above the first level, increasing the power gated to the second module. | 09-19-2013 |
20130249604 | ADAPTIVE TRIAC CONTROLLER - A low voltage AC power controller uses a line coupled capacitor AC to DC converter circuit to obtain energy from AC line power supplied to an AC load and may be used with an external high voltage AC switching device to control power supplied to the AC load. The line coupled capacitor AC to DC converter circuit provides a low power device that senses characteristics of the power supplied to the load and can communicate sensed information and/or receive control information related to the power supplied to load. | 09-26-2013 |
20130249605 | SEMICONDUCTOR DEVICE - A semiconductor device, includes: a first field effect transistor having one terminal to which a first electrical potential is given; a second field effect transistor having one terminal to which a second electrical potential smaller than the first electrical potential is given; a controller that controls each electrical potential of each control terminal of the first field effect transistor and the second field effect transistor; a capacitor element having one end connected to the control terminal of the first field effect transistor, the capacitor element being charged by the control of the controller; and a load element connected between another terminal of the first field effect transistor and another terminal of the second field effect transistor. | 09-26-2013 |
20130249606 | FET DRIVE CIRCUIT AND FET MODULE - According to an embodiment, an FET drive circuit includes an FET, a first circuit, a resistor and a third rectifying device. The first circuit includes a first rectifying device, a second rectifying device and a capacitive element sequentially provided in series from a drain to a gate of the FET, the first rectifying device allowing a forward electric current flowing from the drain to the gate, and the second rectifying device having a predetermined breakdown voltage with respect to the electric current from the drain to the gate. The resistor is provided between a power source and a connecting point of the second rectifying device and the capacitive element; and the third rectifying device provided between a source and a gate of the FET. | 09-26-2013 |
20130249607 | BOOTSTRAPPED SWITCH CIRCUIT AND DRIVING METHOD THEREOF - The present invention relates to a bootstrap switch circuit and a driving method thereof. The bootstrap switch circuit includes: an input transistor including a first electrode for receiving an input voltage; an output transistor including a second electrode connected to a second electrode of the input transistor, and a first electrode for outputting an output voltage; a control transistor including a control electrode connected to the second electrode of the input transistor and the second electrode of the output transistor, and a first electrode for receiving a power supply voltage; and a level shifter including a power input terminal connected to the second electrode of the control transistor, an output terminal connected to a control electrode of the input transistor and a control electrode of the output transistor, and an input terminal for receiving a switch control signal. The level shifter turns on the input transistor and the output transistor when the switch control signal is an enable level, and it turns off the input transistor and the output transistor when the switch control signal is a disable level. | 09-26-2013 |
20130257489 | APPARATUSES INCLUDING SCALABLE DRIVERS AND METHODS - Apparatuses and methods are described that include a plurality of drivers corresponding to a single via. A number of drivers can be selected to operate individually or together to drive a signal through a single via. Additional apparatus and methods are described. | 10-03-2013 |
20130257490 | DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE - A PMOS output stage and an NMOS output stage of which output impedances are controlled in accordance with impedance codes, a gate control part which drives output transistors held by the PMOS output stage and the NMOS output stage, and a slew rate control part which generates bias voltages to control driving ability of the gate control part based on an input current are included, and manufacturing variability of an input current circuit generating an input current is corrected by using the impedance code by the slew rate control part. | 10-03-2013 |
20130257491 | DRIVER WITH RESISTANCE CALIBRATION CAPABILITY - A semiconductor device includes a driver circuit having an output resistance that is controllable responsive to a resistance control signal and a calibration circuit configured to duplicate a resistance behavior of the driver circuit and to generate the resistance control signal responsive to the duplicated resistance behavior. The driver circuit may include a first variable resistor and may be configured to couple an output node to a power supply node via the first variable resistor responsive to an input signal The calibration circuit may include a second variable resistor that is a duplicate of the first variable resistor. The calibration circuit may further include a current source circuit and may be configured to couple the second variable resistor between the power supply node and the current source circuit and to generate the resistance control signal responsive to a voltage of the second variable resistor. | 10-03-2013 |
20130257492 | METHOD AND DEVICE FOR LOWERING THE IMPEDANCE OF A TRANSISTOR - A method and circuit for lowering impedance of a transistor bridge having two pairs of cooperating transistors, comprising receiving a pair of DC input signals which enable activation of one of the pairs of transistors, the activation providing a path for the DC input signals through the two activated transistors, the pair of DC input signals having voltages differing from each other by a first amount; and applying a second pair of DC signals each to a different gate of the two activated transistors, the second pair of DC signals having voltages differing from each other by a second amount that is greater than the first amount, wherein as a result of the second amount being greater than the first amount, impedances of the two activated transistors are lower as compared to if the pair of DC input signals were used in substitution for the second pair of signals. | 10-03-2013 |
20130265084 | HIGH VOLTAGE DRIVER - A circuit, which includes a high voltage driver, is disclosed. The high voltage driver includes a P-type field effect transistor (PFET) and a source bias circuit. The source bias circuit receives a low voltage input signal and applies a direct current (DC) bias to the low voltage input signal to provide a DC biased signal. The PFET has a first source, a first gate, and a first drain. The first source receives the DC biased signal. The first gate receives a first low voltage DC supply signal. The first drain provides a high voltage output signal based on the DC biased signal and the first low voltage DC supply signal. In this regard, the high voltage driver receives and translates the low voltage input signal to provide the high voltage output signal. | 10-10-2013 |
20130265085 | IMPLEMENTING VOLTAGE FEEDBACK GATE PROTECTION FOR CMOS OUTPUT DRIVERS - A method and circuit for implementing protection for complementary metal oxide semiconductor (CMOS) output drivers, and a design structure on which the subject circuit resides are provided. An output driver stage transistor stack includes a plurality of series connected PFETs series connected with a plurality of series connected NFETs connected between upper and lower voltage supply rails. A pair of offset DC voltage levels provides respective gate voltages of an intermediate PFET and an intermediate NFET in the output driver stage transistor stack. A pair of pre-driver circuits receiving voltage level translated logic signals drive respective gate inputs of the upper PFET and the lower NFET in the output driver stage transistor stack. A voltage feedback circuit provides respective gate voltages of the PFET and NFET connected together in the output driver stage transistor stack. | 10-10-2013 |
20130265086 | Semiconductor Devices Including a Guard Ring and Related Semiconductor Systems - Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided. | 10-10-2013 |
20130271187 | DRIVER FOR SEMICONDUCTOR SWITCH ELEMENT - Providing a driver for semiconductor switch element capable of securing a sufficient drive power and reliably turning off the semiconductor switch element. The driver includes a converter section | 10-17-2013 |
20130278297 | Low Leakage Digital Buffer Using Bootstrap Inter-Stage - The present invention is a method and circuitry for driving a high-threshold MOS device on low input voltages. The invention includes a circuit that operates on a supply voltage that is less than the threshold voltage of the high-threshold MOS device. The circuit includes one or more low threshold MOS inverters and one or more capacitors that operate at low input voltages. The one or more low threshold MOS inverters operate in a manner that the one or more capacitors get charged to a voltage greater than the low input voltage. Thereafter, the charged capacitor drives the high threshold MOS device. | 10-24-2013 |
20130278298 | CONVERTER SWITCH APPARATUS AND METHOD - A switch apparatus includes a semiconductor power switch connected for delivering current while driven by a gate drive voltage and an adaptive gate drive unit connected to a gate of the power switch. The gate drive unit is configured to select one of a plurality of pre-determined time functions for a gate drive voltage, and to deliver the gate drive voltage to the gate of the power switch according to the selected time function, thereby driving the power switch to deliver current within a pre-determined slew rate envelope. | 10-24-2013 |
20130278299 | METHOD FOR FORMING AN ELECTRIC SIGNAL REPRESENTING A SOUND AND A DEVICE THEREFOR - A method for driving a field effect transistor for shaping an electrical signal, representing a sound, to an output signal is disclosed. The method comprises modifying the input signal to an intermediate signal, and output of the intermediate signal to the field effect transistor for shaping the output signal. The method comprises the steps of adjusting the quiescent point of the field effect transistor such that the same is placed in the quadratic region of the transfer characteristics of the field effect transistors, and adjusting the amplitude of the intermediate signal, such that the same causes the potential swing between the gate terminal and the source terminal to at least partly be in the quadratic region of the transfer characteristics of the field effect transistor. | 10-24-2013 |
20130278300 | MOSFET SWITCH GATE DRIVE, MOSFET SWITCH SYSTEM AND METHOD - A gate driver ( | 10-24-2013 |
20130285709 | SEMICONDUCTOR INTEGRATED CIRCUIT HAVING ARRAY E-FUSE AND DRIVING METHOD THEREOF - A semiconductor integrated circuit includes: a normal fuse cell array programmed with a normal fuse data; a dummy fuse cell array programmed with a verifying fuse data; and a sensor configured to read the verifying fuse data from the dummy fuse cell array and read the normal fuse data from the normal fuse cell array, wherein the normal fuse cell array is configured to be read according to a reading result of the dummy fuse cell array. | 10-31-2013 |
20130285710 | High Side Driver with Power Supply Function - The present document discloses a driver circuit for the high side switch of a half bridge at ultra-high voltage. The half bridge comprises the high side switch coupled to an input voltage Vin and to a midpoint of a low side switch. The driver circuit comprises a control signal generation unit generating a stream of control pulses and a control logic generating a gate voltage for the high side switch using a supply voltage Vcc based on the control pulses, a supply voltage capacitor generating the supply voltage Vcc, and a decoupling capacitor coupled on a first side to the control signal generation unit and on a second side to the control logic, to the midpoint of the half bridge via a first charging switch, and to the supply voltage capacitor via a second charging switch. | 10-31-2013 |
20130285711 | SEMICONDUCTOR DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC DEVICE - To achieve low power consumption of a semiconductor device including a plurality of function blocks capable of being in either an operating state or a not-operating state, by effective use of electric charge discharged from a not-operating function block. In a semiconductor device including a plurality of function blocks, a capacitor is electrically connected to the plurality of function blocks so that electric charge discharged from a not-operating function block is accumulated in the capacitor. Then, the electric charge accumulated in the capacitor is supplied to a function block to be in an operating state, and then power is supplied from a power source to the function block. | 10-31-2013 |
20130285712 | Method for Driving Power Semiconductor Switches - A method for driving a controllable power semiconductor switch, having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, includes adjusting a gradient of switch-off edges of an output current and an output voltage of the power semiconductor switch by a voltage source arrangement coupled to the input terminal. A gradient of switch-on edges of an output current and an output voltage is adjusted by a controllable current source arrangement that is coupled to the input terminal and generates a gate drive current. The profile of the gate drive current from one switching operation to a subsequent switching operation, beginning at a rise in the output current and ending at a decrease in the output voltage, is varied at most within a predefined tolerance band. | 10-31-2013 |
20130293267 | CONTROL DEVICE FOR A RESONANT APPARATUS - A control device of a switching circuit of a resonant apparatus is described. The switching circuit comprises at least one half-bridge having a high-side transistor and a low-side transistor connected between an input voltage and a reference voltage; the resonant apparatus comprises a resonant load. The control device is configured to determine the on time period and the off time period of the transistors alternatively and a dead time of both the transistors so that a periodic square-wave voltage is applied to the resonant load. The control device comprises a detector adapted to detect the current sign flowing through the resonant load and a correction circuit configured to extend the current operating time period of said two transistors in response to at least the current sign detected from the detection means. | 11-07-2013 |
20130293268 | System and Method for Driving a Switch - In accordance with an embodiment, a circuit for driving a switch includes a driver circuit. The driver circuit includes a first output configured to be coupled to a gate of the JFET, a second output configured to be coupled to a gate of the MOSFET, a first power supply node, and a bias input configured to be coupled to the common node. The switch to be driven includes a JFET coupled to a MOSFET at a common node. | 11-07-2013 |
20130300461 | POWER SWITCH DRIVING CIRCUITS AND SWITCHING MODE POWER SUPPLY CIRCUITS THEREOF - In one embodiment, a power switch driving circuit can include: (i) a first circuit configured receiving a control signal, and controlling a first transistor gate, where a first transistor source is coupled to a power supply, and a first transistor drain is coupled to a driving signal configured to control a power switch; (ii) a second circuit configured to receive the control signal, and to control a second transistor gate, where a second transistor source is coupled to ground, and a second transistor drain is coupled to the driving signal; and (iii) a driving enhancement circuit having a third transistor and a first inverter that is configured to invert an output of the first circuit to control a third transistor gate, where a third transistor source is coupled to the driving signal, and a third transistor drain is coupled to the power supply. | 11-14-2013 |
20130300462 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - To reduce power consumption, a semiconductor device includes a power source circuit for generating a power source potential, and a power supply control switch for controlling supply of the power source potential from the power source circuit to a back gate of a transistor, and the power supply control switch includes a control transistor for controlling conduction between the power source circuit and the back gate of the transistor by being turned on or off in accordance with a pulse signal that is input into a control terminal of the control transistor. The power source potential is intermittently supplied from the power source circuit to the back gate of the transistor, using the power supply control switch. | 11-14-2013 |
20130307591 | DEPLETION-MODE CIRCUIT - This document discloses, among other things, a switch circuit that includes a depletion-mode field-effect transistor (DMFET) having an ON-state and an OFF-state, wherein the DMFET is configured to couple a first node to a second node in the ON-state, and wherein the DMFET is configured to isolate the first node from the second node in the OFF-state, a negative charge pump that is coupled to a gate terminal of the DMFET, the charge pump configured to supply a negative charge pump voltage to the gate terminal of the DMFET, and a negative discriminator coupled to the charge pump, the discriminator configured to compare a first voltage at the first node and a second voltage at the second node and determine the negative charge pump voltage based on the comparison. | 11-21-2013 |
20130307592 | INTERNAL VOLTAGE GENERATION CIRCUITS - Internal voltage generation circuits are provided. The internal voltage generation circuit includes a driving signal generator comparing first and second internal voltage signals with lower and upper limit reference voltage signals to generate a pull-up driving signal and a pull-down driving signal, a driver generating a first voltage and a second voltage in response to the pull-up driving signal and the pull-down driving signal, a selecting signal generator comparing the first internal voltage signal with the second internal voltage signal to generate a selection signal, and a selection transmitter that transmits any one of the first and second voltages to the first or second internal voltage signal in response to the selection signal. | 11-21-2013 |
20130307593 | DRIVE UNIT FOR SWITCHING ELEMENT - In a drive unit for a switching element, a drive circuit changes the switching element between an on-state and an off-state, by controlling a potential difference between a reference terminal, which is one of a pair of ends of a current path of the switching element, and an opening-closing control terminal of the switching element. A determination section determines, if an on-operation command or an off-operation command is inputted as an operation signal for the switching element, whether or not the potential difference has reached a specific value toward which the potential difference shifts, in response to one of the operation commands, with respect to a threshold value by which the switching element is turned on. A forcible processing section removes charge for turning on the switching element from the opening-closing control terminal, if the determination section determines that the potential difference has not reached the specific value. | 11-21-2013 |
20130314132 | DRIVING SYSTEM FOR SWITCHING ELEMENT - In a driving system for driving a switching element, a controller controls the switching element. A temperature measuring module measures a temperature of the switching element, and output a first signal representing the measured temperature of the switching element as first information. A state determining module determines whether the switching element is in a specified temperature state based on the first signal, and outputs a second signal representing a result of the determination as second information. A communication medium communicably connects between the controller and the state determining module, and the second signal output from the state determining module being transferred to the controller via the communication medium. The controller determines how to drive the switching element based on the second information in the second signal transferred thereto via the communication medium. | 11-28-2013 |
20130321033 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF OPERATING THE SAME - Provided is a semiconductor integrated circuit including an internal voltage generator for generating an internal voltage. A semiconductor integrated circuit includes a dividing unit, a comparing unit, a driving unit, and a voltage level controlling unit. The dividing unit divides an internal voltage in a predetermined division ratio to output a feedback voltage. The comparing unit compares a feedback voltage with a reference voltage. The driving unit drives an internal voltage terminal in response to an output signal of the comparing unit. The voltage level controlling unit controls a voltage level of the output signal of the comparing unit in response to a first control signal that is activated at a predetermined time before an operation time point of an internal circuit using an internal voltage. | 12-05-2013 |
20130321034 | POWER ELECTRONIC DEVICES - A semiconductor device or power electronic device is described. The device includes a pair of pole pieces, each having a profiled surface. A semiconductor body or wafer, preferably of wide bandgap electronic material, is located between the pole pieces and includes contact metallisation regions. The semiconductor body produces an electric field that emerges from an edge region. Passivation means includes a first or radially inner part in contact with the edge region of the semiconductor body and which diffuses the electric field as it emerges from the edge region and a second or radially outer part. The second part of the passivation is in contact with the first part and provides a substantially void-free interface with the profiled surface of each pole piece. The device may be immersed in a dielectric liquid. | 12-05-2013 |
20130321035 | Driver Circuit - Devices and methods are provided in which a driver is supplied via a first current path and a second current path which can comprise a switching element. | 12-05-2013 |
20130321036 | GATE DRIVING APPARATUS - A gate driving apparatus is disclosed. The gate driving apparatus includes a first gate driving chip and N second gate driving chips, wherein N is positive integer. The first gate driving chip has a first input pin and a first current output pin. The first gate driving chip receives a reference electrical signal by the first input pin, and generates a reference current according to the reference electrical signal. The first current output pin is used for outputting the reference current. Each of the second gate driving chips has a current input pin for receiving the reference current and a second current output pin for outputting the reference current. The first gate driving chip and the second gate driving chips generate at least a first output signal and at least N second output signals according to the reference current. | 12-05-2013 |
20130321037 | CONTROL APPARATUS FOR SEMICONDUCTOR SWITCHES OF AN INVERTER, AND METHOD FOR DRIVING AN INVERTER - A control apparatus for driving a semiconductor switch of an inverter. A drive circuit generates a driver signal on the basis of a switching signal generated by a control regulation system of the inverter. A driver circuit which is coupled between the drive circuit and a control input of the semiconductor switch is configured to receive the driver signal and to generate, on the basis of the driver signal, a control signal which drives the semiconductor switch. The control signal is fed into the control input of the semiconductor switch. A regulation circuit is coupled to the drive circuit and is configured to detect a voltage signal dependent on the voltage across the semiconductor switch, to generate a regulation signal which is dependent on the voltage signal and is intended to regulate the driver signal, and to feed the regulation signal into the drive circuit. | 12-05-2013 |
20130321038 | Drive way for FET - An apparatus and a method are provided to drive FET with voltage determined by current through the FET and parameters of FET to get maxim efficiency for any specific load current and variable load current; two versions of the invention are provided; one version of the invention is to provide an independent power supply with selected voltage value; the other version of the invention is to provide a controllable variable output voltage power supply to supply variable voltage to driver corresponding to variable load current. | 12-05-2013 |
20130328596 | APPARATUS AND METHOD FOR POWER SWITCH HEALTH MONITORING - A method includes obtaining a standard value for a characteristic of a power switch and obtaining a measured value of the characteristic, via a gate drive unit connected to a gate terminal of the power switch. The method also includes determining a health state of the power switch by comparing the measured value to the standard value of the characteristic. | 12-12-2013 |
20130328597 | NEGATIVE VOLTAGE GENERATORS - Negative voltage generators that do not require level shifters or AC coupling capacitors are disclosed. In an exemplary design, a negative voltage generator includes first, second, third and fourth switches, a capacitor, and a control circuit. The first switch is coupled between an input node and a first node. The second switch is coupled between the first node and circuit ground. The third switch is coupled between a second node and circuit ground. The fourth switch is coupled between the second node and an output node. The input node receives a positive voltage, and the output node provides a negative voltage. The capacitor is coupled between the first and second nodes. The control circuit (e.g., an inverter) generates a control signal having positive and negative voltage levels for the third switch using a negative voltage level at the second node. | 12-12-2013 |
20130328598 | VOLTAGE CONTROL CIRCUIT - A control circuit includes a basic input output system (BIOS) chip, an embedded controller (EC), and a regulation unit. The BIOS chip outputs control signals corresponding to various operating frequencies of an electronic element. A digital-to-analog conversion unit of the EC receives the control signals, and outputs different types of analog voltages to the regulation unit. The regulation unit provides a proper voltage to the electronic element in relation to the operating frequency of the electronic element. | 12-12-2013 |
20130328599 | GATE DRIVER UNIT FOR ELECTRICAL SWITCHING DEVICE - An exemplary apparatus and method for using intelligent gate driver units with distributed intelligence to control antiparallel power modules or parallel-connected electrical switching devices like IGBTs is disclosed. The intelligent gate drive units use the intelligence to balance the currents of the switching devices, even in dynamic switching events. The intelligent gate driver units can use master-slave or daisy chain control structures and instantaneous or time integral differences of the currents of parallel-connected switching devices as control parameters. Instead of balancing the currents, temperature can also be balanced with the intelligent gate driver units. | 12-12-2013 |
20130335120 | SOURCE SERIES TERMINATED DRIVER CIRCUIT WITH PROGRAMMABLE OUTPUT RESISTANCE, AMPLITUDE REDUCTION, AND EQUALIZATION - A source-series terminated (‘SST’) driver circuit that includes: one or more data signal inputs; one or more control signal inputs; a driver output; and a plurality of driver cells, the driver cells coupled in parallel to one another, outputs of the driver cells coupled together to form the driver output of the SST driver circuit, where output resistance of the SST driver circuit varies in dependence upon activation of one or more of the parallel driver cells, activation of each driver cell controlled by control signals received at the control signal inputs. | 12-19-2013 |
20130335121 | ELECTRONIC SWITCH FOR LOW-VOLTAGE AND HIGH SWITCHING SPEED APPLICATIONS - An electronic switch may include transfer transistor having a first conduction terminal for receiving an input signal, a second conduction terminal, and a control terminal. The transfer transistor may enable/disable a transfer of the input signal from the first conduction terminal to the second conduction terminal according to a control signal. The control signal may take a first value and a second value different from the first value, a difference between the first value and the second value defining, in absolute value, an operative value of the control signal. The electronic switch may further comprise a driving circuit for receiving the input signal and the control signal, and for providing a driving signal equal to the sum between the input signal and the operative value of the control signal to the control terminal of the transfer transistor. | 12-19-2013 |
20130335122 | ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND METHOD OF DRIVING THE ELECTRONIC DEVICE - An electronic device includes: a base member; a conductive film including a first end portion and a second end portion fixed to the base member, the conductive film being movable in a lateral direction of the base member between the first end portion and the second end portion; a first driving electrode, which is provided in the base member at a position opposed to a first main surface of the conductive film, and to which a first driving voltage is applied; a second driving electrode, which is provided in the base member at a position opposed to a second main surface of the conductive film, and to which a second driving voltage is applied; and a terminal provided in the base member at a position where the terminal enables to come into contact with the second main surface of the conductive film. | 12-19-2013 |
20130335123 | DRIVER IC CHIP AND PAD LAYOUT METHOD THEREOF - Provided is a driver IC chip of a liquid crystal display (LCD). The driver IC chip has a layout of power pads, which may uniformly apply an adhesive force on the entire adhesion surface of the driver IC chip, when the driver IC chip is mounted on a display panel according to a chip-on-glass (COG) technique. | 12-19-2013 |
20130342243 | POWER SWITCH DRIVING CIRCUITS AND POWER CONVERTERS THEREOF - In one embodiment, a power switch driving circuit can include: (i) an upper switch having a first power terminal coupled to a voltage source, and a second power terminal coupled to a driving signal; (ii) a lower switch having a first power terminal coupled to the driving signal, and a second power terminal coupled to a first voltage level, where the first voltage level is higher than a first ground potential; (iii) an upper switch driving sub circuit configured to receive a control signal, and to drive the upper switch in response thereto; and (iii) a lower switch driving sub circuit configured to receive the control signal, and to drive the lower switch in response thereto, where the upper and lower switch driving sub circuits are coupled to a second ground potential. | 12-26-2013 |
20140002145 | DRIVING CIRCUIT FOR A TRANSISTOR | 01-02-2014 |
20140002146 | OUTPUT DRIVER FOR HIGH VOLTAGE AND WIDE RANGE VOLTAGE OPERATION AND DATA OUTPUT DRIVING CIRCUIT USING THE SAME | 01-02-2014 |
20140009190 | CURRENT PROVIDING CIRCUIT AND VOLTAGE PROVIDING CIRCUIT - A current providing circuit, for providing an output current at an output terminal, comprising: a current providing module, coupled to a first predetermined voltage level, for providing the output current according to the first predetermined voltage level and a control voltage transmitted to the current providing module; and a control voltage generating module, for generating the control voltage corresponding to the first predetermined voltage level and a threshold voltage of the current providing module. | 01-09-2014 |
20140009191 | OUTPUT BUFFER - An output buffer is disclosed. The output buffer includes an input-stage circuit, an output-stage circuit and a compensation circuit. The compensation circuit includes a capacitor, a first switch, a second switch, a third switch, and a fourth switch. The input-stage circuit receives a differential input signal and outputting a response signal. The output-stage circuit receives the response signal and outputting an output signal. The first switch controls a connection between the input-stage circuit and a first terminal of the capacitor. The second switch controls the connection between an output terminal of the compensation circuit and a second terminal of the capacitor. The third switch controls the connection between the input-stage circuit and the second-terminal of the capacitor. The forth switch controls the connection between the output terminal of the compensation circuit and the first terminal of the capacitor. | 01-09-2014 |
20140015571 | SYSTEMS AND METHODS FOR REGULATING SEMICONDUCTOR DEVICES - A system for regulating semiconductor devices may include a current regulator configured to regulate one or more currents provided to an insulated gate bipolar transistor (IGBT). The current regulator may regulate the currents by generating a current profile based at least in part on a collector voltage value associated with the IGBT, a rate of collector voltage change value associated with the IGBT, or any combination thereof The current profile may include one or more current values to be provided to a gate of the IGBT such that the current values are configured to limit the rate of collector voltage change to a first value. The current regulator may then send the one or more current values to a current source configured to supply the gate of the IGBT with one or more currents that correspond to the one or more current values. | 01-16-2014 |
20140028357 | ADAPTIVE GATE DRIVE CIRCUIT WITH TEMPERATUARE COMPENSATION - An adaptive gate drive circuit that can generate a gate bias voltage with temperature compensation for a MOSFET is disclosed. The adaptive gate drive circuit may generate the gate bias voltage with variable drive capability to combat higher gate leakage current of the MOSFET at higher temperature. In one design, an apparatus includes a control circuit and a gate drive circuit. The control circuit generates at least one control signal having a variable frequency determined based on a sensed temperature of the MOSFET. For example, a clock divider ratio may be determined based on the sensed temperature of the MOSFET, an input clock signal may be divided based on the clock divider ratio to obtain a variable clock signal, and the control signal(s) may be generated based on the variable clock signal. The gate drive circuit generates a bias voltage for the MOSFET based on the control signal(s). | 01-30-2014 |
20140028358 | Gate Control Circuit, Power Module And Associated Method - A gate control circuit including: a gate input arranged to receive an input gate feed signal; a gate output arranged to be connected, during normal operation, to at least one switching module for controlling current through a main circuit, the gate output being connected to the gate input; a power supply; and a switch connected between the power supply and the gate output, the switch being arranged to close as a response to a failure. A corresponding power module and method are also presented. | 01-30-2014 |
20140035627 | SiC Proportional Bias Switch Driver Circuit with Current Transformer - A switch bias system is provided that includes a silicon on carbide (SiC) bipolar junction transistor (BJT) switch comprising a base, emitter, and collector; an energy storage circuit coupled to the collector of the SiC BJT switch, the energy storage circuit supplying current flow to the collector of the SiC BJT switch; a current transformer circuit coupled to the emitter, the current transformer circuit configured to sense current flow through the emitter of the SiC BJT switch; and a proportional bias circuit configured to generate a bias current to the base of the SiC BJT switch, the bias current set to a proportion of the sensed current flow through the emitter of the SiC BJT switch. | 02-06-2014 |
20140035628 | Regulator Using Smart Partitioning - A disclosed apparatus includes a converter for receiving a supply and regulating a load. The converter uses a gate driver that is controlled by a controller via a control loop. The control loop controls the converter in response to a feedback signal. The controller is located on a first integrated circuit and the gate driver is located on as second integrated circuit. A process geometry of the first integrated circuit is finer than a process geometry of the second integrated circuit. | 02-06-2014 |
20140035629 | DRIVER APPARATUS FOR SWITCHING ELEMENTS - In a driver apparatus for driving a voltage-controlled switching element, an absolute value of a voltage difference between a voltage at a reference terminal that is one of terminals of a current path of the switching element and a voltage at the switching control terminal of the switching element is clamped at a clamping voltage greater than a threshold voltage. A voltage greater than the threshold voltage applied to the switching control terminal allows the switching element to be turned on. When the current flowing through the switching element becomes equal to or greater than a clamp threshold after the switching element transitions from an off-state to an on-state, a voltage-drop-rate at which the absolute value is decreased to the clamping voltage is decreased. | 02-06-2014 |
20140035630 | VERTICALLY INTEGRATED SYSTEMS - Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having electrical components embodied therein, wherein the electrical components include at least one discrete passive component. The integrated circuit system also includes at least one electrical path coupling the first active layer and the second pre-fabricated layer. | 02-06-2014 |
20140043067 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD AND OPERATING METHOD OF THE SAME - A semiconductor structure and a manufacturing method and an operating method of the same are provided. The semiconductor structure includes a substrate, a main body structure, a first dielectric layer, a first conductive strip, a second conductive strip, a second dielectric layer, and a conductive structure. The main body structure is formed on the substrate, and the first dielectric layer is formed on the substrate and surrounding two sidewalls and a top portion of the main body structure. The first conductive strip and the second conductive strip are formed on two sidewalls of the first dielectric layer, respectively. The second dielectric layer is formed on the first dielectric layer, the first conductive strip, and the second conductive strip. The conductive structure is formed on the second dielectric layer. | 02-13-2014 |
20140043068 | METHOD FOR DRIVING SEMICONDUCTOR DEVICE - To provide a driving method of a semiconductor device for reducing power consumption. In a method for driving a semiconductor device of one embodiment of the present invention, in a first period, a switch configured to control an electrical connection between a first wiring and a second wiring together with an n-channel transistor and a p-channel transistor is in an off state during a period in which the states of the n-channel transistor and the p-channel transistor gates of which are electrically connected to each other are switched between an on state and an off state. In a second period, the switch is set to be in an off state. The switch has a channel formation region in a semiconductor, band gap of which is higher than silicon and intrinsic carrier density of which is lower than silicon. | 02-13-2014 |
20140043069 | POWER SAVING DRIVER DESIGN - In an asymmetrically terminated communication system, the power consumed to transmit a particular bit value is adjusted based on whether the bit being output is the second, third, fourth, etc. consecutive bit with the same value after a transition to output the particular bit value. The adjustment of the power consumed to transmit the two or more consecutive bits with the same value may be made by adjusting the driver strength during the second, or subsequent, consecutive bits with the same value. The adjustment of the power consumed is performed on the bit value that consumes the most DC power and the other value is typically not adjusted. | 02-13-2014 |
20140049295 | SWITCH-DRIVING CIRCUIT - A switch-driving circuit suitable for driving a full-controlled power switch combination is disclosed. The switch-driving circuit includes a first pulse-width modulator, a high-voltage isolation pulse transformer module and a plurality of output modules. The high-voltage isolation pulse transformer module includes a magnetic core connected to multiple output modules in a one-to-many way, or includes multiple magnetic cores connected to multiple output modules in a one-to-one way. Each output module includes a second pulse-width modulator and a driving-power amplifier. The full-controlled power switch combination includes a plurality of full-controlled power switches. The driving-power amplifier is coupled between the second pulse-width modulator and one of the full-controlled power switches. | 02-20-2014 |
20140049296 | ELECTRONIC DEVICE INCLUDING TRANSISTOR AND METHOD OF OPERATING THE SAME - An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode. | 02-20-2014 |
20140049297 | GATE DRIVE CIRCUIT - A gate drive circuit includes: an input port for receiving a control signal; an output port; a capacitor connected to the output port; a modulation unit which generates (i) a first modulated signal indicating timing of a first logical value of the control signal and (ii) a second modulated signal indicating timing of at least a second logical value of the control signal; a first electromagnetic resonance coupler which wirelessly transmits the first modulated signal; a second electromagnetic resonance coupler which wirelessly transmits the second modulated signal; a first rectifier circuit which generates a first demodulated signal by demodulating the first modulated signal, and outputs the first demodulated signal to the output port; and a second rectifier circuit which generates a second demodulated signal by demodulating the second modulated signal, and outputs the second demodulated signal to the output port. | 02-20-2014 |
20140055170 | METHOD, SYSTEM, AND APPARATUS FOR EFFICIENTLY DRIVING A TRANSISTOR WITH A BOOSTER IN VOLTAGE SUPPLY - A method, system, and apparatus for driving a Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) are provided. A boosting capacitor is used in combination with two drivers to efficiently provide a boosting current to the SiC JFET and then a holding current to the SiC JFET. The boosting capacitor, upon discharge, creates the boosting current and once discharged the holding current is provided by one of the first and second drivers. | 02-27-2014 |
20140055171 | DRIVER CIRCUIT - A driver circuit has a detector circuit including a high side detection transistor, a resistor, and a low side detection transistor connected to a high side output transistor and a low side output transistor. A clamping circuit converts a high voltage amplitude change signal generated at a connection point of the high side detection transistor and resistor to a signal clamped to a voltage range applied on the low side. An OR circuit outputs a signal taking the logical sum of an inverted control signal and an output of a low side first stage drive circuit. A level shifter circuit outputs a level-shifted signal of the OR circuit to a high side first stage drive circuit. A second OR circuit outputs a signal wherein the logical sum of an output signal of the clamping circuit and the control signal is inverted to the low side first stage drive circuit. | 02-27-2014 |
20140055172 | SWITCH DRIVING CIRCUIT - A switch driving circuit for driving a full-controlled power switch is disclosed, including a pulse-width modulation unit, a pulse transformer, an anti-interference module, a pulse-width demodulation unit and a driving-power amplifier. The pulse-width modulation unit converts a driving input signal into a positive-negative narrow pulse-width signal. The anti-interference module is coupled to the secondary side and the positive-negative narrow pulse-width signal includes multiple positive pulses and negative pulses. The anti-interference module filters out the ones from the positive pulses and negative pulses of which the pulse amplitude does not reach an effective threshold, and meanwhile the anti-interference module suppress a common-mode noise caused by a high voltage transient variation at a moment when the full-controlled power switch is turned on or off. The pulse-width demodulation unit converts the filtered positive-negative narrow pulse-width signal into a driving output signal. | 02-27-2014 |
20140055173 | POWER MODULE - A power module includes an IGBT; a MOSFET connected in parallel with the IGBT; a lead frame having a first frame portion on which the IGBT is mounted and a second frame portion on which the MOSFET is mounted, and having a step by which the first frame portion is located at a first height and the second frame portion is located at a second height larger than the first height; and an insulation sheet for a heat sink which is disposed on an underside of only the first frame portion of the lead frame. | 02-27-2014 |
20140055174 | Low Current Start Up Including Power Switch - The present document relates to a start-up circuit comprising a power switch wherein a circuit charges a supply voltage capacitor. The capacitor provides a supply voltage to a power switch; the power switch forms a switched power converter with a power converter network. The circuit comprises a source and gate interface for coupling the circuit to the power switch; a capacitor interface couples the circuit to the supply voltage capacitor; a start-up path couples the gate interface to the capacitor interface; wherein the startup path provides a voltage at the gate interface which is at or above a threshold voltage of the power switch; and a charging path couples the source interface to the capacitor interface; wherein the charging path provides a charging current to the capacitor interface, when the power switch is in on-state. | 02-27-2014 |
20140055175 | High-Voltage Driver Integratable with an Integrated Circuit - A high-voltage driver integratable with an integrated circuit has a switching transistor, a switching diode, a first resistor, a second resistor, and a control transistor. The anode of the switching diode is connected to the source of the switching transistor. The cathode of the switching diode is connected to the gate of the switching transistor. When the source voltage of the switching transistor is far greater than the cut-in voltage of the switching diode, the switching diode is forward-biased, and the gate-source voltage of the switching transistor is equal to the negative cut-in voltage. Accordingly, high voltage will not be generated across the gate-source junction of the switching transistor, no junction breakdown will occur between the gate and source thereof, and the high-voltage driver can be integrated with an integrated circuit. | 02-27-2014 |
20140062541 | DRIVE UNIT FOR DRIVING VOLTAGE-DRIVEN ELEMENT - A controller of a drive unit is configured so as to control a voltage supplied to a gate resistor of a voltage-driven element by using of a voltage of a feedback connector when an electrical connection between the feedback connector and the gate resistor of the voltage-driven element is ensured. Further, the controller of the drive unit is configured so as to control the voltage supplied to the gate resistor of the voltage-driven element by using of a voltage of an output connector when the electrical connection between the feedback connector and the gate resistor of the voltage-driven element is not ensured. | 03-06-2014 |
20140062542 | GATE DRIVER CIRCUIT AND METHOD - A driver circuit includes first switch, configured to selectively couple a first driving node to a power supply node, and a second switch, configured to selectively couple a second driving node to a ground node. The first driving node is coupled to each transistor in a first set of PMOS transistor(s) and the second driving node is coupled to each transistor in a second set of NMOS transistor(s). The driver circuit is configured to propagate a first drive signal in a first direction along an electrical path for biasing the first and second sets of transistors when the transistors in the first set, before receiving the first drive signal, are in a first state. The driver circuit is configured to propagate a second drive signal in a second direction along the path when the transistors in the first set, before receiving the second drive signal, are in a second state. | 03-06-2014 |
20140062543 | DYNAMIC DRIVER CIRCUIT - A circuit usable as a word line driver includes a driver that switches in response to a voltage on a control node, and a circuit supplying a voltage to the control node. The circuit that applies a voltage to control node provides a first static current tending to pull the control node up to a first source voltage, and provides a fighting current pulse in response to a signal selecting the driver to pull the control node down to a second source voltage, overcoming the first static current. In addition, a circuit provides a pull-up boost current on a transition of the signal selecting the driver that turns off the fighting current, and applies a boosting current pulse to the control node to assist pulling the control node quickly to the first source voltage. | 03-06-2014 |
20140062544 | Semiconductor Device Arrangement with a First Semiconductor Device and with a Plurality of Second Semiconductor Devices - Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor, each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors, and one of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device. | 03-06-2014 |
20140070852 | POWER SEMICONDUCTOR DEVICE - According to one or more embodiments of the present invention, a power semiconductor device comprise a plurality of gate electrodes, first to third electrodes, and first to fifth semiconductor layers The second semiconductor layer is formed on the first semiconductor layer. A plurality of the third semiconductor layers are formed in the second semiconductor layer and arranged in a direction perpendicular to the stacking direction. The fourth semiconductor layer is formed on the second semiconductor layer. The fifth semiconductor layer is formed on the fourth semiconductor layer. The gate electrodes are formed above the second semiconductor layer and each gate electrode is arranged between the adjacent third semiconductor layers. The first electrodes are formed below the gate electrodes. One of the first electrodes is connected to the gate electrode. One of the first electrodes is connected to the third electrode. | 03-13-2014 |
20140077846 | SWITCHING ELEMENT DRIVER IC AND SWITCHING ELEMENT DRIVER DEVICE EQUIPPED WITH THE SAME - A switching element driver IC has one or more photocouplers, a driver circuit, a detection circuit and a setting circuit. The photocoupler receives setting data transmitted from a microcomputer, and transmits the received setting data to the setting circuit, wherein an input side as a high voltage side is electrically insulated from an output side as a low voltage side in the photocoupler. The setting circuit transmits the setting data to the driver circuit and the detection circuit. The driver circuit and the detection circuit operate on the basis of the received setting data. The setting data can be provided to the driver circuit and the detection circuit through the photocoupler and the setting circuit. This structure makes it possible to suppress increasing the number of terminals at the high voltage side of the switching element driver IC, and decrease the entire size of the switching element driver IC. | 03-20-2014 |
20140077847 | SEMICONDUCTOR INTEGRATED CIRCUIT AND ELECTRONIC CIRCUIT - A semiconductor integrated circuit and an integrated circuit, each of which includes multiple regions containing at least one switchable region to switch between supplying power and blocking power individually; a power supply controller to control switching supplying power and blocking power in the switchable region that switches supplying power and blocking power individually; a power supply variable impedance circuit to change a power supply impedance of the semiconductor integrated circuit; and a power supply impedance controller to obtain the power supplying state of the region from the power supply controller, to cause the power supply variable impedance circuit to change the power supply impedance, based on a supply state of the power in the switchable region. | 03-20-2014 |
20140077848 | Semiconductor Device Driving Unit - A semiconductor device driving unit to supply a drive signal to a gate of a semiconductor switching device, the semiconductor device driving unit comprising: a plurality of gate impedance circuits selectably connectable to the gate of the semiconductor switching device; and a selector to select one or more of the gate impedance circuits to connect to the semiconductor switching device. Also provided is a method of supplying a drive signal to a gate of a semiconductor switching device, the method comprising: selecting one or more of a plurality of gate impedance circuits to be connected to the gate of the semiconductor switching device based on one or more operating conditions and stored data relating to the one or more operating conditions; and connecting the selected one or more of the gate impedance circuits to the semiconductor switching device. | 03-20-2014 |
20140084965 | CLOCK CONTROL DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE SAME AND CLOCK CONTROL METHOD - A clock control device and method are provided. The clock control device includes a stable time controller which receives an operational condition and generates an expiration counting value based on the operational condition; a stable time counter which receives the expiration counting value and activates a clock gating enable signal after a count value of the stable time counter is equal to the expiration counting value; a clock gating cell which transmits a clock signal after receiving the clock gating enable signal; and an oscillator which generates an oscillator clock signal and transmits the oscillator clock signal to the clock gating cell and the stable time counter. | 03-27-2014 |
20140084966 | DRIVER CIRCUIT OF SCHOTTKY TRANSISTOR - A driver circuit includes an output terminal connected to a gate of a Schottky transistor, a reference transistor formed in the same manner as the Schottky transistor, a resistor connected between a first power source line and a gate of the reference transistor, a voltage generator configured to supply a second node with a voltage equal to or lower than a voltage at a first node between the resistor and the reference transistor, and a switching element configured to transmit the voltage at the second node to the output terminal in response to a signal inputted to an input terminal. | 03-27-2014 |
20140084967 | DRIVE CIRCUIT FOR SWITCHING ELEMENT - A drive circuit is provided for a target switching element and opens/closes a current path by controlling an absolute value of a potential difference between one end of the current path and an opening/closing control terminal. The drive circuit includes an integrated circuit connected to the control terminal. The integrated circuit includes an absolute value control circuit controlling the absolute value of the potential difference when the switching element is in an off-state, a stabilization circuit stabilizing the potential difference at a value for maintaining the switching element in an off-state when the switching element is in an off-state, a selection circuit selecting one of control of the absolute value of the potential difference by the control circuit and stabilization of the potential difference by the stabilization circuit, and an on-state terminal connected to the control circuit and the control terminal. The on-state terminal is connected to the stabilization circuit. | 03-27-2014 |
20140084968 | FREQUENCY SPECIFIC CLOSED LOOP FEEDBACK CONTROL OF INTEGRATED CIRCUITS - Systems and methods for frequency specific closed loop feedback control of integrated circuits. In one embodiment, a plurality of controllable inputs to an integrated circuit is adjusted to achieve a frequency specific predetermined value of a dynamic operating indicator of the integrated circuit at the desired specific operating frequency. The predetermined value is stored in a data structure within a computer usable media. The data structure comprises a plurality of frequency specific predetermined values for a variety of operating frequencies. An operating condition of an integrated circuit is controlled via closed loop feedback based on dynamic operating indicators of the measured behavior of the integrated circuit. | 03-27-2014 |
20140084969 | METHOD FOR SETTING TRANSISTOR OPERATING POINT AND CIRCUIT THEREFOR, METHOD FOR CHANGING SIGNAL COMPONENT VALUE AND ACTIVE-MATRIX LIQUID CRYSTAL DISPLAY DEVICE - A data signal voltage on a signal line is held in a voltage holding capacitor through an n-type MOS transistor switched on by a gate scan voltage, and supplied to an analog amplifier circuit. The analog amplifier circuit is formed of an MOS transistor having a double gate structure, and the operating point thereof is set at an operating range in which dependence of Ids on Vds is substantially nullified. Even when Vds is varied due to a response of liquid crystal, Ids is substantially fixed. Accordingly, the pixel voltage which is substantially proportional to the data signal voltage can be applied to the liquid crystal. | 03-27-2014 |
20140084970 | LOW-POWER ETHERNET TRANSMITTER - An electrical circuit comprising a line driver for providing Ethernet signals is disclosed. The line driver comprises a voltage mode line driver for producing 1000BT and 100BT Ethernet signals and an active output impedance line driver arranged parallel to the voltage mode line driver. The line driver is capable of producing 1000BT or 100BT or 10BT Ethernet signals, wherein either the voltage mode line driver or the active impedance line driver is active. | 03-27-2014 |
20140091839 | Electronic Circuit with a Reverse Conducting Transistor Device - An electronic circuit includes a first transistor device with a control terminal and a load path. A drive circuit includes an input terminal and an output terminal. The output terminal is coupled to the control terminal of the first transistor device. The drive circuit is operable to drive the first transistor device dependent on an input signal received at the input terminal. A polarity detector is coupled in parallel with the load path of the first transistor device. The polarity detector includes a second transistor device and a current detector. The second transistor device includes a load path connected to the load path of the first transistor device. The current detector includes a sense path in series with the load path of the second transistor device and an output connected to the input terminal of the drive circuit. | 04-03-2014 |
20140091840 | High-Side Semiconductor-Switch Low-Power Driving Circuit and Method - A high-side semiconductor-switch driving method includes generating power for controlling a high side semiconductor switch. The high side semiconductor switch has a control terminal and the power allows a current to flow into the control terminal of the high side semiconductor switch to switch the high side semiconductor switch. The voltage at the control terminal of the high side semiconductor switch is quantified. The power dependent on the voltage at the control terminal of the high side semiconductor switch is controlled so that the current provided is increased when the voltage at the control terminal indicates that the current is not sufficient to switch the high side semiconductor switch. | 04-03-2014 |
20140097876 | GATE DRIVING CIRCUIT AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE - A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET. | 04-10-2014 |
20140103968 | FIELD PLATE ASSISTED RESISTANCE REDUCTION IN A SEMICONDUCTOR DEVICE - Embodiments of a semiconductor device, a circuit including a semiconductor device and a driver circuit, and a method for operating a semiconductor device are described. In one embodiment, a semiconductor device includes a substrate, a source region, a drain region, and a drain extension region formed in the substrate, and an insulation layer adjacent to the drain extension region. A gate layer and a field plate are formed one of within and on the insulation layer. The field plate is located adjacent to the drain extension region and is electrically insulated from the gate layer and the source region such that a voltage can be applied to the field plate independent from voltages applied to the gate layer and the source region. Other embodiments are also described. | 04-17-2014 |
20140103969 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF DRIVING THE SAME - According to example embodiments, a HEMT includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart on the channel layer, a depletion-forming layer on the channel supply layer, and a plurality of gate electrodes on the depletion-forming layer between the source electrode and the drain electrode. The channel supply layer is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured to form a depletion region in the 2DEG. The plurality of gate electrodes include a first gate electrode and a second gate electrode spaced apart from each other. | 04-17-2014 |
20140103970 | SYSTEMS AND METHODS FOR DRIVING TRANSISTORS WITH HIGH TRESTHOLD VOLTAGES - System and method are provided for driving a transistor. The system includes a floating-voltage generator, a first driving circuit, and a second driving circuit. The floating-voltage generator is configured to receive a first bias voltage and generate a floating voltage, the floating-voltage generator being further configured to change the floating voltage if the first bias voltage changes and to maintain the floating voltage to be lower than the first bias voltage by a first predetermined value in magnitude. The first driving circuit is configured to receive an input signal, the first bias voltage and the floating voltage. The second driving circuit is configured to receive the input signal, a second bias voltage and a third bias voltage, the first driving circuit and the second driving circuit being configured to generate an output signal to drive a transistor. | 04-17-2014 |
20140111252 | THRESHOLD TRACKING BIAS VOLTAGE FOR MIXERS - Bias voltage generators that can generate variable bias voltages for transistors in mixers and other circuits are disclosed. In an exemplary design, an apparatus (e.g., a wireless device or an integrated circuit (IC)) includes at least one transistor and a bias voltage generator. The transistor(s) have a threshold voltage and receive a bias voltage. The bias voltage generator generates the bias voltage based on changes to the threshold voltage of the transistor(s), e.g., due to IC process and/or temperature. In an exemplary design, the bias voltage generator includes a replica transistor that tracks the transistor(s) and an op-amp that provides a gate voltage for the replica transistor. The bias voltage is generated based on the gate voltage. The bias voltage generator may generate the bias voltage (i) to track the threshold voltage of the transistor(s) in a first mode or (ii) based on a fixed voltage in a second mode. | 04-24-2014 |
20140111253 | DRIVER FOR SWITCHING ELEMENT AND CONTROL SYSTEM FOR MACHINE USING THE SAME - In a driver, a charging module electrically charges the on-off control terminal of the switching element for turning on the switching element, and a limiting module performs a task of limiting a voltage at the on-off control terminal of the switching element by a predetermined voltage to thereby limit an increase of a current flowing between the input and output terminals of the switching element. A determining module determines whether the voltage at the on-off control terminal of the switching element deviates from the predetermined voltage while the limiting module is performing the limiting task. A correcting module corrects the voltage at the on-off control terminal of the switching element to be close to the predetermined voltage when it is determined that the voltage at the on-off control terminal of the switching element deviates from the predetermined voltage. | 04-24-2014 |
20140111254 | INTEGRATED CIRCUIT CHIP AND SYSTEM HAVING THE SAME - An integrated circuit chip includes: an internal circuit; a data output circuit configured to output a data packet of the internal circuit in response to a strobe signal; an oscillator configured to generate a first clock signal; a divider configured to divide the first clock signal and generate a second clock signal; and a strobe signal supply unit configured to supply the second clock signal as the strobe signal during an initial period of transmission of the data packet and supply the first clock signal as the strobe signal after the initial period. | 04-24-2014 |
20140111255 | INTEGRATED CIRCUIT CHIP AND SYSTEM HAVING THE SAME - An integrated circuit chip includes: an internal circuit; a data output circuit configured to output a data packet of the internal circuit in response to a strobe signal; an oscillator configured to generate a first clock signal; a divider configured to divide the first clock signal and generate a second clock signal; and a strobe signal supply unit configured to supply the second clock signal as the strobe signal during an initial period of transmission of the data packet and supply the first clock signal as the strobe signal after the initial period. | 04-24-2014 |
20140118032 | Buck Converter Power Package - One exemplary disclosed embodiment comprises a semiconductor package including a vertical conduction control transistor and a vertical conduction sync transistor. The vertical conduction control transistor may include a control source, a control gate, and a control drain that are all accessible from a bottom surface, thereby enabling electrical and direct surface mounting to a support surface. The vertical conduction sync transistor may include a sync drain on a top surface, which may be connected to a conductive clip that is coupled to the support surface. The conductive clip may also be thermally coupled to the control transistor. Accordingly, all terminals of the transistors are readily accessible through the support surface, and a power circuit, such as a buck converter power phase, may be implemented through traces of the support surface. Optionally, a driver IC may be integrated into the package, and a heatsink may be attached to the conductive clip. | 05-01-2014 |
20140125386 | GATE DRIVING CIRCUIT - A gate driving circuit is provided which is capable of alleviating the effect of a switching noise generated when an IGBT is turned on/off or a common mode noise on a gate driving signal. The gate driving circuit, a primary side and a secondary side thereof being insulated from each other by a pulse transformer; the primary side of the pulse transformer being grounded to a first ground potential point; the secondary side of the pulse transformer being grounded to a second ground potential point insulated from the first ground potential point; and a gate driving signal generated in a secondary winding of the pulse transformer being outputted through a receiver having impedance matching resistors on the input side, includes an electrostatic shield plate between a primary winding of the pulse transformer and the secondary winding, the electrostatic shield plate being grounded to the second ground potential point. | 05-08-2014 |
20140132310 | DRIVING INTEGRATED CIRCUIT - A driving integrated circuit (IC) is disclosed. The driving IC comprises a signal processing circuit, a receiver and a terminal resistance providing circuit. The receiver is coupled to a first transmission line and a second transmission line and is output to the signal processing circuit after receiving a transmission signal through the first transmission line and the second transmission line. The terminal resistance providing circuit is coupled to the receiver. | 05-15-2014 |
20140132311 | HIGH-VOLTAGE BULK DRIVER - This application discusses, among other things, apparatus and methods for driving the bulk of a high-voltage transistor using transistors having gates with low-voltage ratings. In an example, a bulk driver can include an output configured to couple to bulk of a high-voltage transistor, a pick circuit configured to couple the output to an input voltage at an input terminal of the high-voltage transistor or an output voltage at the output terminal of the high-voltage transistor when the high-voltage transistor is in a high impedance state, and a bypass circuit configured to couple the output of the bulk driver to the output voltage when the high-voltage transistor is in a low impedance state. | 05-15-2014 |
20140132312 | EFFICIENCY OPTIMIZED DRIVER CIRCUIT - Driver circuitry and methods are provided for driving a semiconductor device. The driver circuitry includes a buck converter configured to generate a baseline current, and a capacitor coupled between an output of the buck converter and ground, the capacitor configured to store charge during an off-state of the buck converter and to discharge the stored charge as a peak current during an on-state of the buck converter, wherein the baseline current reaches a current limit prior to the capacitor being fully discharged, and an output current at an output of the buck converter is based, at least in part, on the baseline current and the peak current. | 05-15-2014 |
20140139268 | DRIVER CIRCUIT WITH TIGHT CONTROL OF GATE VOLTAGE - A driver circuit includes a driver output stage and an operational amplifier. The driver output stage has a high-level voltage input and a low-level voltage input, and is operable to generate an output voltage responsive to a gate voltage applied to the driver output stage. The operational amplifier is operable to regulate the gate voltage applied to the driver output stage so that the output voltage corresponds to a control signal input to the operational amplifier. A first supply voltage connected to the high-level voltage input of the driver output stage is higher than a maximum value of the control signal, and a second supply voltage connected to the low-level voltage input of the driver output stage is lower than a minimum value of the control signal. | 05-22-2014 |
20140139269 | MULTI-CHIP SYSTEM AND SEMICONDUCTOR PACKAGE - A multi-chip system may include a plurality of chips, and a channel shared by the plurality of chips. At least one of the plurality of chips includes a transmission circuit configured to transmit a signal to the channel. Drivability of the transmission circuit is adjusted based on a number of the plurality of chips. | 05-22-2014 |
20140139270 | PANEL DRIVER IC AND COOLING METHOD THEREOF - A panel driver integrated circuit (IC) and a cooling method of the panel driver IC are provided. The panel driver IC includes a data encoder, a level shifter, a Digital-to-Analog Converter (DAC), a rearrangement circuit and an output buffer. The data encoder receives and selectively changes an original data for outputting to the level shifter. An input terminal and an output terminal of the level shifter are coupled to an output terminal of the data encoder and a data input terminal of the DAC, respectively. The output terminals of the rearrangement circuit are respectively coupled to the reference voltage input terminals of the DAC for providing different reference voltages. The rearrangement circuit correspondingly rearranges the order of the reference voltages according to the operation of the data encoder. An input terminal of the output buffer is coupled to an output terminal of the DAC. | 05-22-2014 |
20140139271 | INTEGRATED CIRCUIT HAVING STACK STRUCTURE - Provided is an integrated circuit (IC) having a stacked structure. The IC includes: a first IC having a power input terminal to which a power supply voltage is applied; and a second IC having a power input terminal connected to a ground terminal of the first IC, having a central node formed as the power input terminal of the second IC and the ground terminal of the first IC are connected to each other and to which a voltage is applied, and having a ground terminal connected to a ground source, wherein the power supply voltage is divided into first and second voltages that are respectively applied to the first and second ICs. | 05-22-2014 |
20140145763 | GATE DRIVING CIRCUIT - A gate driving circuit for driving an insulated gate switching element, including a gate charging circuit configured to charge gate capacitance of the insulated gate switching element, and a gate discharging circuit that is connected in series with the gate charging circuit and configured to discharge a charge of the gate capacitance. The gate charging circuit includes a first p-channel metal oxide semiconductor field effect transistor (MOSFET), and a first hybrid normally-on enhancement MOSFET insertion (NOEMI) circuit connected in series with a drain of the first p-channel MOSFET. The gate discharging circuit includes a first n-channel MOSFET, and a second hybrid NOEMI circuit connected in series with a drain of the first n-channel MOSFET. | 05-29-2014 |
20140152349 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF AND OPERATING METHOD THEREOF - A semiconductor device, a manufacturing method thereof and an operating method thereof are provided. The semiconductor device includes a substrate, a first well, a second well, a first heavily doping region, a second heavily doping region, a third heavily doping region, and an electrode layer. The first and the second wells are disposed on the substrate. The first and the third heavily doping regions, which are separated from each other, are disposed in the first well, and the second heavily doping region is disposed in the second well. The electrode layer is disposed on the first well. Each of the second well, the first heavily doping region, and the second heavily doping region has a first type doping. Each of the substrate, the first well, and the third heavily doping region has a second type doping, which is complementary to the first type doping. | 06-05-2014 |
20140152350 | Integrated Circuits Including Magnetic Devices, And Associated Methods - An integrated circuit includes a semiconductor die including one or more switching circuits, a magnetic core having length and width, first and second metallic leads, and integrated circuit packaging material. The first metallic lead forms a first winding turn around a portion of the magnetic core, and the first metallic lead is electrically coupled to the semiconductor die. The second metallic lead forms a second winding turn around a portion of the magnetic core. The first and second winding turns are offset from each other along both of the width and length of the magnetic core. The integrated circuit is, for example, included in an integrated electronic assembly. | 06-05-2014 |
20140152351 | GATE CONTROL CIRCUIT - An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor. | 06-05-2014 |
20140152352 | VOLTAGE LEVEL SHIFTER - A level shifter includes a latch supplied at a first voltage V | 06-05-2014 |
20140159777 | VOLTAGE DETECTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - Provided are a voltage detector that blocks out an input signal for an electronic device when a level of an input voltage for determining a voltage level of the input signal is equal to or less than a predetermined level and a semiconductor device including the same. The voltage detector outputs a detection signal indicating whether or not a level of a first voltage exceeds a first threshold, using the first voltage and a second voltage, which is independent of the first voltage. | 06-12-2014 |
20140159778 | SEMICONDUCTOR DEVICE AND POWER SUPPLY CONTROL METHOD OF THE SEMICONDUCTOR DEVICE - A semiconductor device includes an internal circuit, a power supply control circuit which controls supply of a power supply to the internal circuit upon receipt of a first control signal, and a control signal generation circuit which outputs the first control signal upon receipt of a second control signal. The control signal generation circuit does not deactivate the first control signal when an inactive period of the second control signal is equal to or less than a first period and deactivates the first control signal when the inactive period of the second control signal is more than the first period. | 06-12-2014 |
20140167822 | CASCODE CIRCUIT - A cascode circuit arrangement has a low voltage MOSFET and a depletion mode power device mounted on a substrate (for example a ceramic substrate), which can then be placed in a semiconductor package. This enables inductances to be reduced, and can enable a three terminal packages to be used if desired. | 06-19-2014 |
20140176198 | CALIBRATION SCHEMES FOR CHARGE-RECYCLING STACKED VOLTAGE DOMAINS - A method and system are disclosed for calibrating a mid-voltage node in an integrated circuit including an input-output circuit having charge-recycling stacked voltage domains including at least first and second voltage domains. In one embodiment, the method comprises transmitting data through the input-output circuit, including transmitting a first portion of the data across the first voltage domain, and transmitting a second portion of the data across the second voltage domain. The method further comprises measuring a specified characteristic of the data transmitted through the input-output circuit; and based on the measured specified characteristic, adjusting a voltage of said mid-voltage node to a defined value. The voltage of the mid-voltage node may be adjusted to accomplish a number of objectives, for example, to achieve a desired trade-off between power and performance, or so that the two voltage domains have the same performance. | 06-26-2014 |
20140176199 | Active Diode Circuit - Various active diode circuits are described. In one example, there is provided an active diode circuit having an active diode and a control circuit. The active diode includes an anode terminal, a cathode terminal and a control terminal. The control circuit is configured to generate a control current of the active diode on the control terminal proportional to the diode current of the active diode. The control circuit is also configured to control the diode voltage of the active diode below a predetermined threshold. | 06-26-2014 |
20140176200 | METHODS AND APPARATUS FOR TUNING A CURRENT SOURCE AND SELECTING A REFERENCE VOLTAGE TO MAINTAIN A TRANSCONDUCTANCE AND TRANSITION FREQUENCIES OF TRANSISTORS OF AN INVERTER - A circuit including a current source, an inverter, and a device. The current source is configured to receive a first reference voltage and supply an output current. The inverter has a transconductance. The inverter includes a first transistor having a source and a drain and a second transistor having a source. The source of the first transistor is connected to the current source. The source of the first transistor is configured to receive a portion of the output current. The source of the second transistor is connected to the drain of the first transistor. The device is configured to select the first reference voltage such that the output current of the current source varies with changes in a temperature of the current source to maintain the transconductance of the inverter at a same value and prevent changes in respective transition frequencies of both the first transistor and the second transistor. | 06-26-2014 |
20140184275 | POWER CELL, POWER CELL CIRCUIT FOR A POWER AMPLIFIER AND A METHOD OF MAKING AND USING A POWER CELL - A power cell including an isolation region having a first dopant type formed in a substrate. The power cell further includes a bottom gate having a second dopant type different from the first dopant type formed on the isolation region and a channel layer having the first dopant type formed on the bottom gate. The power cell further includes source/drain regions having the first dopant type formed in the channel layer and a first well region having the second dopant type formed around the channel layer and the source/drain regions, and the first well region electrically connected to the bottom gate. The power cell further includes a second well region having the first dopant type formed around the channel layer and contacting the isolation region and a gate structure formed on the channel layer. | 07-03-2014 |
20140184276 | GATE DRIVER - Disclosed herein is a gate driver. The gate driver according to an exemplary embodiment of the present invention includes: a first power switch sourcing current according to voltage applied by a voltage source; a second power switch connected with the first power switch in series and sinking current according to the voltage applied by the voltage source; and a speed booster receiving a voltage pulse from the outside to output peak current so as to make a turn on/off operation of the first power switch fast. As set forth above, according to the exemplary embodiments of the present invention, it is possible to improve the driving speed of the gate driver without increasing the current of the current source by further including the speed booster configured of the plurality of MOSFETs and the capacitor. | 07-03-2014 |
20140184277 | MULTI-GATE HIGH VOLTAGE DEVICE - A high voltage semiconductor device, particularly a device including a number of high breakdown voltage transistors having a common drain, first well, and insulating structure between the gate and the drain as well as method for using the same is provided in this disclosure. The high breakdown voltage transistors in the device together are in an elliptical shape. A second well region, gate structure, and a source region are partially overlapping discontinuous elliptical rings having at least two discontinuities or openings in a top view. The respective discontinuities or openings define each of the high breakdown voltage transistors. | 07-03-2014 |
20140184278 | DRIVER CIRCUIT FOR DRIVING POWER TRANSISTORS - A driver circuit for driving a power transistor includes a converter having a first transistor and a second transistor coupled in series between a supply node and a reference node. The converter is configured to receive a first signal and in response thereto generate a second signal for selectively controlling status of the power transistor. The ratio of a first leakage current of the first transistor to a second leakage current of the second transistor is used in the generation of the second signal which is applied to the control terminal of a transistor switch that is selectively actuated to turn off the power transistor. | 07-03-2014 |
20140184279 | DRIVE CIRCUIT AND SEMICONDUCTOR DEVICE - According to an embodiment, a drive circuit includes a first signal source outputting a signal to control a normally on type transistor to change between an ON state and an OFF state, a second signal source outputting a signal to put the transistor in the OFF state, a gate voltage monitor monitoring a gate voltage of the transistor, and a controller making the second signal source to output a signal for putting the transistor in the OFF state, based on an output signal from the gate voltage monitor. | 07-03-2014 |
20140191784 | Semiconductor Drive Circuit and Power Conversion Apparatus Using Same - The dead time is secured stably in a semiconductor drive circuit for switching devices using a wide band gap semiconductor. The drain terminal of the switching device of an upper arm is connected to the positive terminal of a first power supply, the source terminal of the switching device of a lower arm is connected to the negative terminal of the first power supply, and the source terminal of the switching device of the upper arm is connected with the drain terminal of the switching device of the lower arm. A gate drive circuit provided for each switching device includes an FET circuit and a parallel circuit made of a parallel connection of a first resistor and a first capacitor and having a first terminal connected to the gate terminal of the switching device. | 07-10-2014 |
20140197869 | CIRCUIT CONTROL DEVICE - A circuit control device controlling a switching circuit which has a semiconductor switching element, having a main controller, a drive signal output portion and an obtaining portion. The main controller outputs a drive control signal. The drive signal output portion receives the drive control signal and outputs a drive signal to the switching element, the switching element acting on the basis of the drive signal. The obtaining portion obtains circuit information on status of the switching circuit in synchronization with the drive control signal. | 07-17-2014 |
20140203846 | Method for Driving a Load - An electronic switch includes a load path connected in series with the load and a drive terminal for receiving a drive signal. The electronic switch is operable to switch between a first operation state and a second operation state dependent on the drive signal. In a first switching cycle, the electronic switch is switched from the first operation state to the second operation state and a voltage across the load is evaluated during the first switching cycle in order to obtain a measured switching profile. The measured switching profile is compared with a reference profile. A drive profile dependent on the comparison is provided. The drive profile is used to drive the electronic switch in a second switching cycle after the first switching cycle. At least two drive parameters are used at different times in the at least one second switching cycle to drive the electronic switch. | 07-24-2014 |
20140203847 | RELIABILITY IN SEMICONDUCTOR DEVICE CONTROL - A gate control device for a semiconductor device includes at least one power supply module, at least one optical communication interface for receiving optical signals from two valve control units and converting them to electric signals for supply to a corresponding power supply module, where in normal operations mode one valve control unit is an active valve control unit and the other is a standby valve control unit, where the optical signal of an active unit energizes the gate control device and provides semiconductor device controlling data, a semiconductor device control module and a reliability control module that performs selection of active valve control unit. | 07-24-2014 |
20140203848 | ELECTRONIC APPARATUS - An electronic apparatus includes a switching element which has a control terminal and is driven by controlling voltage of the control terminal, a driving power supply circuit which supplies voltage required for driving the switching element, an on-driving circuit which is connected to the driving power supply circuit and the control terminal of the switching element and is supplied with voltage from the driving power supply circuit, and which applies a constant current to the control terminal of the switching element to charge the control terminal, thereby turning on the switching element, and at least one diode which is connected between the on-driving circuit and the control terminal of the switching element. The on-driving circuit applies a constant current to the control terminal of the switching element through the diode. | 07-24-2014 |
20140203849 | DRIVE CIRCUIT AND METHOD FOR A GATED SEMICONDUCTOR SWITCHING DEVICE - Drive circuit and method for a gated semiconductor switching device A drive circuit and method for a gated semiconductor switching device ( | 07-24-2014 |
20140210522 | DRIVE CIRCUITRY COMPENSATED FOR MANUFACTURING AND ENVIRONMENTAL VARIATION - Current drivers and biasing circuitry at least partly compensate for manufacturing variations and environmental variations such as supply voltage, temperature, and fabrication process. | 07-31-2014 |
20140218074 | CIRCUIT CONTROL DEVICE - In the invention, a circuit control device controlling a semiconductor switching element having a control terminal and driven by voltage inputted to the control terminal, has an input voltage detector, a desired voltage setting portion and a control input generation portion. The input voltage detector detects inputted voltage to the switching element. The desired voltage setting portion sets a desired value of the voltage to be inputted to the switching element. The control input generation portion is connected to the control terminal of the switching element, the control input generation portion generating control input to the switching element such that the value to be detected by the input voltage detector closes to the set desired value. The desired voltage setting portion sets the desired value of the voltage on the basis of predetermined characteristics information and operating parameters of the switching element. The operating parameters include temperature of the switching element, Vce, Ice etc. | 08-07-2014 |
20140232436 | POWER SEMICONDUCTOR DEVICE DRIVING CIRCUIT - A power semiconductor device driving circuit includes a gate control terminal, which is provided at a position separated from a drain terminal of a power semiconductor device by a predetermined distance so that electric discharge is generated between the drain terminal and the gate control terminal at the time of generation of surge. A surge voltage is applied to the gate control terminal due to this discharge, the gate of the power semiconductor device is charged to turn on and absorb the surge energy. Thus it becomes possible to suppress the surge voltage applied to the drain terminal and prevent breakdown of the power semiconductor device. | 08-21-2014 |
20140240005 | Pre-Charge Circuit with Reduced Process Dependence - A pre-charging circuit, such as can be used to pre-charge a data bus, is presented that is largely process independent. A push-pull type of arrangement is used, where the output of the pre-charge circuit is initially connected to a supply level through one transistor, then connect to ground by another transistor. These transistors can be controlled by one or more comparators that have as inputs a reference level and feedback from the output. The reference level is generated by a circuit that tracks the threshold voltage of the other devices in the circuit in order to reduce process dependency of the output level. The circuit can also include a device to provide an extra VDD assist to the output. | 08-28-2014 |
20140240006 | ENERGY DELIVERY SYSTEM AND METHOD FOR A GATE DRIVE UNIT CONTROLLING A THYRISTOR-BASED VALVE - The invention concerns energy delivery system and method for a gate drive unit controlling a thyristor-based valve ( | 08-28-2014 |
20140240007 | Drive Circuit For Power Transistor - A turn-on drive circuit for a power transistor comprising a first circuit comprising a resistor and capacitor in parallel and a second circuit comprising a resistor, the second circuit being in series in the drive path with the first circuit. A turn-off drive circuit for a power transistor comprising a first circuit comprising a first resistor and a second resistor in series in the drive path of the power resistor and a second circuit comprising a capacitor in parallel with one of the resistors of the first circuit. | 08-28-2014 |
20140247070 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential. | 09-04-2014 |
20140247071 | ARCHITECTURE FOR VBUS PULSING IN UDSM PROCESSES - Architecture for VBUS pulsing in an Ultra Deep Sub Micron (UDSM) process for ensuring USB-OTG (On The Go) session request protocol, the architecture being of the type wherein at least a charging circuit is deployed, uses a diode-means connected in a forward path of the charging circuit. The architecture might include a diode-divider including nodes and connected from VBUS in said charging circuit. One embodiment uses both charging and discharging circuits comprising transistors. The charging circuit transistor might comprise a PMOS transistor and the discharging circuit transistor might comprise a NMOS transistor. The architecture might include a three resistance string of a total resistance value approximating 100K Ohms connected between said VBUS and ground, wherein the discharging circuit transistor might comprise a drain extended NMOS transistor. The charging and discharging circuit transistors have VDS and VGD of about 3.6V, whereby high VGS transistors are not needed. | 09-04-2014 |
20140253180 | CHARGE PUMP POWER SAVINGS - Exemplary embodiments are directed to systems, devices, methods, and computer-readable media for reducing static and dynamic power consumption of a charge pump. In one embodiment, a device may include a plurality of switches, each switch of the plurality having a gate coupled to a dedicated driver of a plurality of drivers. The device may further include at least one clamp switch coupled to at least one driver of the plurality of drivers and configured to adjust a rail voltage of the at least one driver if an input voltage is greater than a threshold voltage. In another embodiment, the device may include a plurality of multiplexers, each multiplexer of the plurality of multiplexers coupled to a portion of an associated switch of the plurality of switches and configured to disable the portion of the associated switch if a clock frequency of the charge pump is below a threshold frequency. | 09-11-2014 |
20140253181 | Feed-Forward Frequency Control Method for Current Mode Hysteretic Buck Regulator - A hysteresis generator provides a hysteresis parameter V_hyst to a hysteresis comparator of a voltage regulator. The hysteresis parameter V_hyst is a function of circuit components of the hysteresis generator, a voltage output Vout of the regulator, a voltage input Vin of the regulator, and a signal that drives one of a plurality of switches of the regulator. A switch driver drives the switches based on the hysteresis parameter. One or more of the circuit components of the hysteresis generator that provide the hysteresis parameter also define a hysteresis time period T_hyst. The hysteresis time period T_hyst defines in combination with a delay time period T_Td of the regulator, a switching time period T for the regulator that is substantially constant. | 09-11-2014 |
20140253182 | DRIVE CONTROL APPARATUS - A drive control apparatus for a semiconductor device having a diode and a transistor includes: a current detection device of a current flowing through the diode; and a control device, which applies a gate drive voltage to the semiconductor device when an on-instruction signal is input. The control device compares the current detection signal with a current threshold value during a first period, in which the on-instruction signal is input, after a second period has elapsed from gate drive voltage application time, or gate drive voltage shut-off time. A transient variation is generated on the current detection signal in the second period. The control device shuts off the gate drive voltage when the current detection signal is equal to or larger than the current threshold value. The control device applies the gate drive voltage when the current detection signal is smaller than the current threshold value. | 09-11-2014 |
20140253183 | FIELD EFFECT TRANSISTOR DEVICE - A semi-metallic structure, comprising an LaAlO | 09-11-2014 |
20140253184 | GATE DRIVE CIRCUIT - A gate drive circuit includes a power supply circuit that has an output switch function for switching a voltage value of a drive voltage between two levels, a gate-ON drive circuit that outputs a constant electric current toward a gate of an IGBT from an output terminal of the power supply circuit, and a control section performs a constant electric current drive of a gate of the IGBT at a time of a turn-ON by operating the gate-ON drive circuit. At a turn-ON start time, the control section sets the drive voltage to a relatively-high first set value, and then switches the drive voltage to a relatively-low second set value at a switch timing after a mirror period end time. | 09-11-2014 |
20140253185 | CIRCUIT AND METHOD FOR IMPROVING NOISE IMMUNITY OF A SINGLE-END LEVEL SHIFTER IN A FLOATING GATE DRIVER - A floating gate driver uses a single-end level shifter to translate a set signal and a reset signal induced by a rising edge and a falling edge of a switch signal to a common output terminal to generate an output voltage for a bistable circuit to generate a level shifted switch signal. Under control of a well transient detect signal asserted by detecting noise in the output voltage, a masking circuit between the single-end level shifter and the bistable circuit masks noise in the output voltage. This configuration has lower area penalty and better noise immunity. | 09-11-2014 |
20140266323 | Systems and Methods for Driving a Load Under Various Power Conditions - An electronic circuit for driving an electronic switch includes a first voltage terminal coupled to receive a first voltage from a power supply and a second voltage terminal coupled to receive a second voltage from the power supply. A driver circuit is configured to drive the voltage at a control terminal of the electronic switch to an intermediate voltage level in order to turn on the electronic switch during a high or normal voltage condition. A clamp circuit is configured to clamp the voltage at the control terminal of the electronic switch to the second voltage terminal in order to turn on the electronic switch during a low voltage condition, so that the electronic switch can enhance power provided to a load during the low voltage condition. A low voltage detection circuit detects the low voltage condition and provides a signal to activate the clamp circuit. | 09-18-2014 |
20140266324 | High Electron Mobility Transistor with Multiple Channels - A device includes a source and a drain for transmitting and receiving an electronic charge. The device also includes a first stack and a second stack for providing at least part of a conduction path between the source and the drain, wherein the first stack includes a first gallium nitride (GaN) layer of a first polarity, and the second stack includes a second gallium nitride (GaN) layer of the second polarity, and wherein the first polarity is different from the second polarity. At least one gate operatively connected to at least the first stack for controlling a conduction of the electronic charge, such that, during an operation of the device, the conduction path includes a first two-dimensional electron gas (2DEG) channel formed in the first GaN layer and a second 2DEG channel formed in the second GaN layer. | 09-18-2014 |
20140266325 | INVERTER WITH PARALLEL POWER DEVICES - A power drive apparatus is provided. The apparatus includes a first switch having a first plurality of power devices arranged in a back to back configuration within adjacent stacked rows of the first switch. The apparatus includes a second switch having a second plurality of power devices arranged in a back to back configuration within adjacent stacked rows of the second switch. A bus is shared with the first switch and the second switch. The apparatus includes a control drive device coupled to a gate of each power device of the first plurality of power devices and each power device of the second plurality of power devices. | 09-18-2014 |
20140266326 | Method for Reducing Overdrive Need in MOS Switching and Logic Circuit - The present disclosure relates to methods and circuits to lowering the signal range of switching or logic circuits below supply range. The circuits may have one or more stages. The supply levels can be set individually for each stage. This may realize amplifiers/attenuators, both digitally and analogically controlled, based on progression and/or modulation in the supply range from stage to stage. A chain of stages can provide the desired power gain by setting the supply progression according to the nature of the incoming signals. The signal levels are lowered by generic device networks comprising voltage sources providing voltages independent of currents flowing through. Decoupling the signal amplitude from DC biasing allows for the signal swing to be lower than threshold voltages of the active devices. | 09-18-2014 |
20140285241 | DRIVER CIRCUIT - A driver circuit for a semiconductor switching device includes a drive power source, a capacitor and four switches, which form a bridge circuit. The capacitor is provided between the four switches. In one cycle of application of a voltage to a gate of the semiconductor switching device to turn on the semiconductor switch, the first and the second switches, which are diagonal, are turned off and the third and the fourth switches, which are diagonal, are turned on to charge the capacitor. Then only the first switch is turned on to apply the voltage to the gate, and lastly only the second switch is turned on to discharge the capacitor thereby to apply a negative voltage to the gate of the semiconductor switching device. | 09-25-2014 |
20140285242 | METHOD, SYSTEM, AND APPARATUS FOR EFFICIENTLY DRIVING A TRANSISTOR WITH A BOOSTER IN VOLTAGE SUPPLY - A method, system, and apparatus for driving a Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) are provided. A boosting capacitor is used in combination with two drivers to efficiently provide a boosting current to the SiC JFET and then a holding current to the SiC JFET. The boosting capacitor, upon discharge, creates the boosting current and once discharged the holding current is provided by one of the first and second drivers. | 09-25-2014 |
20140292379 | OUTPUT CIRCUIT - An output circuit includes: a first PMOS transistor and a second PMOS transistor connected in series between a high potential side power source and an output node; a first NMOS transistor and a second NMOS transistor connected in series between a low potential side power source and the output node; a first capacitive coupling part connected between a gate of the first PMOS transistor and gates of the second PMOS transistor and the second NMOS transistor; and a second capacitive coupling part connected between a gate of the first NMOS transistor and gates of the second NMOS transistor and the second PMOS transistor, a first bias voltage is applied to the gate terminal of the second PMOS transistor, and a second bias voltage is applied to the gate terminal of the second NMOS transistor. | 10-02-2014 |
20140292380 | SEMICONDUCTOR DEVICE WITH A CURRENT SAMPLER AND A START-UP STRUCTURE - A semiconductor device with a current sampler and a start-up structure, comprises first, second and third high-voltage transistors, and a resistor, wherein: a drain terminal of the first transistor is respectively connected to a drain terminal of the second transistor, a drain terminal of the third transistor and one end of the resistor; a source terminal of the first transistor is grounded, and a gate terminal of the first transistor is connected to a gate terminal of the second transistor; the other end of the resistor is connected to a gate terminal of the third transistor; wherein the resistor is wound and formed in a common voltage withstand region of the first transistor, the second transistor and the third transistor, or in a voltage withstand region of the first transistor only, or in the voltage withstand region of the third transistor only. | 10-02-2014 |
20140300394 | DRIVE CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT, AND CONTROL METHOD OF DRIVE CIRCUIT - A drive circuit including a second switching element that is connected in series to a source of a first switching element, that is switched ON when the first switching element is switched ON, and that is switched OFF when the first switching element is switched OFF. The drive circuit includes a conduction element that is provided between a drain of the second switching element and a power line, and that connects the drain of the second switching element to the power line in accordance with a signal that switches the second switching element OFF. | 10-09-2014 |
20140306739 | DRIVE CIRCUIT FOR SWITCHING ELEMENT - A driving circuit for a switching element includes a main current wiring and a substrate. The main current wiring has a flat surface and carries a main current. The substrate has a flat surface mounted on the flat surface of the main current wiring and includes a coil disposed inside. The coil is disposed so as to interlink with a magnetic flux generated depending on the main current of the switching element and is electrically connected such that the coil receives the pulse signal of the signal source and transmits the pulse signal to a control terminal of the switching element. | 10-16-2014 |
20140312935 | COMMON MODE VOLTAGE MULTIPLEXER - A circuit and a system that uses the circuit for connecting a plurality of input channels to a receiving device. The circuit includes a plurality of DMOS switches, each of which connects a respective one of the input channels to the receiving device in response to a respective control signal. The control signals are referenced to a ground signal. Each input channel includes a common mode voltage that is non-referenced to the ground signal. The circuit also includes a switch driver that generates the control signals such that the input channels are activated one at a time. | 10-23-2014 |
20140320174 | INTEGRATED CIRCUITS WITH LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR STRUCTURES - Integrated circuits with improved LDMOS structures are provided. An integrated circuit includes a semiconductor substrate, a plurality of shallow trench isolation (STI) regions, each extending at least a first depth below an upper surface of the semiconductor substrate. The STI regions electrically isolate devices fabricated in the semiconductor substrate. The integrated circuit further includes a transistor structure. The transistor structure includes a gate dielectric positioned over a portion of a first one of the plurality of STI regions, a drain region adjacent to the first one of the plurality of STI regions and spaced apart from the gate dielectric, a first gate electrode that extends over a first portion of the gate dielectric, a second gate electrode that extends over a second portion of the gate dielectric and positioned adjacent to the first gate electrode, and a source region positioned adjacent to the first portion of the gate dielectric. | 10-30-2014 |
20140320175 | GATE DRIVING CIRCUIT - A gate driving circuit includes a first input terminal, a second input terminal, a third input terminal, an output terminal, a first transistor, a second transistor, a third transistor, and a capacitor. The first terminal of the first transistor is coupled to the first input terminal. The control terminal of the first transistor is coupled to the second input terminal. The first terminal of the second transistor is coupled to the third input terminal. The control terminal of the second transistor is coupled to the second terminal of the first transistor. The second terminal of the second transistor is coupled to the output terminal. The first terminal of the third transistor is coupled to the output terminal. The second terminal of the third transistor is coupled to ground terminal. The capacitor is coupled between the control terminal of the second transistor and the output terminal. | 10-30-2014 |
20140320176 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a transistor circuit including a power supply terminal and a back gate terminal; a variable resistance connected between a first voltage terminal and the power supply terminal; and a control circuit controlling the variable resistance based on a digital signal in which a difference voltage is converted when an absolute value of the difference voltage between a voltage of the first voltage terminal and a voltage of the back gate terminal is lower than a threshold value. | 10-30-2014 |
20140320177 | CIRCUIT FOR DRIVING HIGH-SIDE TRANSISTOR - A circuit for driving a transistor includes a drive circuit, a first voltage boost circuit and a second voltage boost circuit. The drive circuit has a first specific node, a second specific node, and a third specific node coupled to a control node of the transistor. The drive circuit is arranged for coupling the first specific node to the third specific node according to at least a voltage of the first specific node and a voltage of the second specific node in order to charge the control node. The first voltage boost circuit is coupled between the first specific node and a connection node of the transistor, and is arranged for boosting the voltage of the first specific node. The second voltage boost circuit is coupled between the first specific node and the second specific node, and is arranged for boosting the voltage of the second specific node. | 10-30-2014 |
20140320178 | INTELLIGENT GATE DRIVER FOR IGBT - A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level. | 10-30-2014 |
20140340126 | DRIVING UNIT AND GATE DRIVER CIRCUIT - The present invention discloses a gate driver circuit. The gate driver circuit includes a plurality of driving units electrically connected in series, wherein the gate driver circuit receives a plurality of frequency signals and the driving units transmit a plurality of output signals sequentially. Furthermore, each driving unit includes a primary circuit, a first voltage regulator circuit and a second voltage regulator circuit. | 11-20-2014 |
20140340127 | SEMICONDUCTOR DEVICE - A semiconductor device with short overhead time. The semiconductor device includes a first wiring supplied with a power supply potential, a second wiring, a switch for controlling electrical connection between the first wiring and the second wiring, a load electrically connected to the second wiring, a transistor whose source and drain are electrically connected to the second wiring, and a power management unit having functions of controlling the conduction state of the switch and controlling a gate potential of the transistor. A channel formation region of the transistor is included in an oxide semiconductor film. | 11-20-2014 |
20140340128 | Organic Zener Diode, Electronic Circuit, and Method for Operating an Organic Zener Diode - This disclosure relates to an organic zener diode having one electrode and one counter electrode, and an organic layer arrangement formed between the electrode and the counter electrode, wherein the organic layer arrangement includes the following organic layers: an electrically n-doped charge carrier injection layer on the electrode side, made from a mixture of an organic matrix material and an n-dopant, an electrically p-doped charge carrier injection layer on the counter electrode side, made from a mixture of another organic matrix material and a p-dopant, and an electrically undoped organic intermediate layer that is arranged between the electrically n-doped charge carrier injection layer on the electrode side and the electrically p-doped charge carrier injection layer on the counter electrode side. An electronic circuit arrangement with an organic zener diode and method for operating an organic zener diode are also provided. | 11-20-2014 |
20140347102 | Anti-Shoot-Through Automatic Multiple Feedback Gate Drive Control Circuit - Automatic and robust anti-shoot-through glitch-free operation of half-bridge control pre-driver and power stage circuits have been achieved by using multiple feedback control signals. These feedback signals are taken both from the gates of power devices on high side and low sides and from the gates of one or more devices on both high side and low side that enable power device ON state. No duty cycle limitation is required of the input signal. The control logic uses NAND/NOR RS latches. The solution disclosed can readily be scaled to higher order of feedback loops providing even greater level of robustness | 11-27-2014 |
20140347103 | FAULT-TOLERANT POWER SEMICONDUCTOR SWITCHING DEVICE CONTROL SYSTEM - We describe a fault-tolerant power semiconductor switching device control system ( | 11-27-2014 |
20140354333 | SELF-SELECTED VARIABLE POWER INTEGRATED CIRCUIT - A self-selected variable power integrated circuit (IC) which maximizes manufacturing yield and reduces system design cost and related methods are disclosed. The method includes determining characteristics of an integrated circuit (IC). The method includes determining a module specific voltage of the IC to meet a designed target frequency and power characteristics, based on the determined IC characteristics. The method includes setting the module specific voltage by using a combination of fuses within the IC. | 12-04-2014 |
20140368240 | SEMICONDUCTOR DEVICE CONTROLLERS - We describe a controller ( | 12-18-2014 |
20140375361 | System and Method for Driving Transistors - In accordance with an embodiment, a circuit includes a first transistor, a second transistor having a reference node coupled to an output node of the first transistor, and a control circuit. The control circuit is configured to couple a second reference node to a control terminal of the second transistor during a first mode of operation, couple a floating reference voltage between the control terminal of the second transistor and the reference terminal of the second transistor during a second mode of operation and during a third mode of operation, and couple a third reference node to the reference terminal of the second transistor during the third mode of operation. The second reference node is configured to have a voltage potential operable to turn-on the second transistor, and the floating reference voltage is operable to turn on the second transistor. | 12-25-2014 |
20140375362 | ACTIVE GATE DRIVE CIRCUIT - An exemplary gate drive circuit and method are disclosed for controlling a gate-controlled component, the gate drive circuit having a PI controller adapted to receive an input reference signal and to control a gate voltage of the gate-controlled component. The gate drive circuit can include a first feedback loop for the PI controller, the first feedback loop having a first gain (k | 12-25-2014 |
20150008964 | Test System for Semiconductor Array - In accordance with an embodiment, an integrated circuit includes a plurality of devices on the integrated circuit. Each device includes a driving circuit, an individual contact pad coupled to a first terminal of the driving circuit, and a switch having a first terminal coupled to the first terminal of the driving circuit. Also, the integrated circuit includes a shared contact pad coupled to a second terminal of each switch of the plurality of devices. The integrated circuit also includes a controller coupled to each switch of the plurality of devices, where the controller is configured to selectively control each switch to couple each driving circuit to the shared contact pad. | 01-08-2015 |
20150008965 | IMPEDANCE COMPONENT HAVING LOW SENSITIVITY TO POWER SUPPLY VARIATIONS - An impedance circuit coupled to a first power supply includes: an output node; a transistor coupled between the output node and the first power supply, wherein the transistor comprises a gate electrode; and a voltage source electrically coupled to the gate electrode of the transistor and configured to apply a gate voltage to the gate electrode of the transistor, wherein the voltage source includes: a plurality of impedance components electrically coupled in series between a circuit node and the first power supply, and a current source electrically coupled between the circuit node and a second power supply. | 01-08-2015 |
20150008966 | CIRCUIT ARRANGEMENT AND METHOD FOR GENERATING A DRIVE SIGNAL FOR A TRANSISTOR - Disclosed is a circuit arrangement for generating a drive signal for a transistor. In one embodiment, the circuit arrangement includes a control circuit that receives a switching signal, a driver circuit that outputs a drive signal, and at least one transmission channel. The control circuit transmits, depending on the switching signal for each switching operation of the transistor, switching information and switching parameter information via the transmission channel to the driver circuit. The driver circuit generates the drive signal depending on the switching information and depending on the switching parameter information. | 01-08-2015 |
20150015309 | Electronic Circuit with a Reverse-Conducting IGBT and Gate Driver Circuit - An electronic circuit includes a reverse-conducting IGBT and a driver circuit. A first diode emitter efficiency of the reverse-conducting IGBT at a first off-state gate voltage differs from a second diode emitter efficiency at a second off-state gate voltage. A driver terminal of the driver circuit is electrically coupled to a gate terminal of the reverse-conducting IGBT. In a first state the driver circuit supplies an on-state gate voltage at the driver terminal. In a second state the driver circuit supplies the first off-state gate voltage, and in a third state the driver circuit supplies the second off-state gate voltage at the driver terminal. The reverse-conducting IGBT may be operated in different modes such that, for example, overall losses may be reduced. | 01-15-2015 |
20150022245 | Parallel Transistor Circuit Controller - A method for controlling a circuit control system. Currents are sensed at outputs of transistors in the circuit control system. Levels are identified for the currents. A number of characteristics of the transistors are controlled while the currents flow out of the transistors such that the currents flowing out of the transistors have desired levels. | 01-22-2015 |
20150022246 | DRIVER CIRCUIT FOR SWITCHING ELEMENT - A driver circuit is connected to a control terminal of a voltage-controlled switching element via a connection line. The drive circuit drives the switching element. The switching element is switched to an ON state by charging the control terminal of the switching element via the connection line. The switching element is switched to an OFF state by discharging the control terminal of the switching element via the connection line. A voltage at a predetermined position on the connection line is detected. An open circuit state between the control terminal and the predetermined position is detected based on a speed of change in the detected voltage at the predetermined position when the switching element is switched to the ON state or the OFF state. | 01-22-2015 |
20150022247 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes an output transistor, a control circuit connected with a gate of the output transistor, a first discharge route from a first node to a ground terminal, and a second discharge route from the first node to the ground terminal. In a usual turn-off, only the first discharge route is used. When a load abnormality occurs, both of the first and second discharge routes are used. The second discharge route contains a discharge transistor and a countercurrent prevention device. The discharge transistor is connected between the first node and the second node. The countercurrent prevention device prevents a flow of current from the third node to the second node. At least, in an OFF period, the control circuit sets the gate voltage of the discharge transistor to a high level. | 01-22-2015 |
20150028922 | TRANSISTOR SWITCH WITH TEMPERATURE COMPENSATED VGS CLAMP - A methodology for controlling FET switch-on with V | 01-29-2015 |
20150028923 | HIGH EFFICIENCY GATE DRIVE CIRCUIT FOR POWER TRANSISTORS - An improved gate drive circuit is provided for a power device, such as a transistor. The gate driver circuit may include: a current control circuit; a first secondary current source that is used to control the switching transient during turn off of the power transistor and a second secondary current source that is used to control the switching transient during turn on of the power transistor. In operation, the current control circuit operates, during turn on of the power transistor, to source a gate drive current to a control node of the power transistor and, during turn off of the power transistor, to sink a gate drive current from the control node of the power transistor. The first and second secondary current sources adjust the gate drive current to control the voltage or current rate of change and thereby the overshoot during the switching transient. | 01-29-2015 |
20150035568 | TEMPERATURE DETECTOR AND CONTROLLING HEAT - A circuit with a temperature detector includes a first FET and a second FET. Each of the first and second FETs has a channel structure having a non-planar structure. The second FET is in close proximity to the first FET. A gate of the second FET is separated from the first FET, and a source and drain of the second FET are shorted together. A resistance of the gate of the second FET between two terminals on the gate of the second FET varies with a temperature local to the first FET. | 02-05-2015 |
20150035569 | SEMICONDUCTOR ELEMENT MODULE AND GATE DRIVE CIRCUIT - A semiconductor element module includes a driving element and a voltage change detecting element each formed of a voltage driving semiconductor element. The voltage change detecting element detects a change of a voltage between a collector and an emitter or between a drain and a source of the driving element. A collector or a drain of the voltage change detecting element is connected to the collector or the drain of the driving element, and a gate of the voltage change detecting element is connected to an emitter or a source of the voltage change detecting element. The emitter or the source of the voltage change detecting element is provided as a detecting terminal. | 02-05-2015 |
20150042384 | Packaged power transistors and power packages - A power package is provided comprising a packaged transistor and a driving unit connected to the transistor and adapted to drive the transistor. A control terminal of the transistor is connected to a middle terminal pin of the housing of the transistor and outer terminal pins of the housing are connected to the driving unit and to a voltage level, respectively, wherein the connections are crossing free. | 02-12-2015 |
20150048867 | High-Side Semiconductor-Switch Low-Power Driving Circuit and Method - A high-side semiconductor-switch driving method includes generating power for controlling a high side semiconductor switch. The high side semiconductor switch has a control terminal and the power allows a current to flow into the control terminal of the high side semiconductor switch to switch the high side semiconductor switch. The voltage at the control terminal of the high side semiconductor switch is quantified. The power dependent on the voltage at the control terminal of the high side semiconductor switch is controlled so that the current provided is increased when the voltage at the control terminal indicates that the current is not sufficient to switch the high side semiconductor switch. | 02-19-2015 |
20150054550 | SIGNAL PROCESSING DEVICE, AND DRIVING METHOD AND PROGRAM THEREOF - A power switch | 02-26-2015 |
20150054551 | LINE DRIVING CIRCUIT IMPROVING SIGNAL CHARACTERISTIC AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A line driving circuit in which a signal characteristic is improved and a semiconductor device including the same are provided. The semiconductor device includes: an line controller arranged in a first portion of at least one line; a first driver arranged in the first portion and configured to output through the at least one line a first signal according to a control of the line controller; and a second driver arranged in a second portion of the at least one line and configured to output through the at least one line a second signal according to a level of the first signal. | 02-26-2015 |
20150054552 | SYSTEMS, CIRCUITS, DEVICES, AND METHODS WITH BIDIRECTIONAL BIPOLAR TRANSISTORS - Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. | 02-26-2015 |
20150061731 | DRIVING CIRCUIT AND SEMICONDUCTOR DEVICE - A driving circuit of the present invention drives a switching element connected to a main current circuit. The driving circuit includes a driving potion applying on/off-voltage to a gate of the switching element, a common inductor disposed in an interconnection part commonly connected to the driving circuit and a source side of the switching element in a loop formed of the main current circuit and the switching element, and a capacitor connected between the gate side and the source side on the driving portion side with respect to the common inductor. | 03-05-2015 |
20150061732 | SYSTEMS, CIRCUITS, DEVICES, AND METHODS WITH BIDIRECTIONAL BIPOLAR TRANSISTORS - Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. | 03-05-2015 |
20150077161 | CIRCUIT INCLUDING A TRANSFORMER FOR DRIVING A SEMICONDUCTOR SWITCHING ELEMENT - A circuit for a semiconductor switching element including a transformer. One embodiment provides a first voltage supply circuit having a first oscillator. A first transformer is connected downstream of the first oscillator. A first accumulation circuit for providing a first supply voltage is connected downstream of the first transformer. A driver circuit having input terminals for feeding in the first supply voltage and having output terminals for providing a drive voltage for the semiconductor switching element, designed to generate the drive voltage for the semiconductor switching element at least from the first supply voltage. | 03-19-2015 |
20150077162 | TRANSISTOR, CLOCKED INVERTER CIRCUIT, SEQUENTIAL CIRCUIT, AND SEMICONDUCTOR DEVICE INCLUDING SEQUENTIAL CIRCUIT - A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween. | 03-19-2015 |
20150097598 | COMMUNICATION PROTOCOL - The application generally relates to apparatus for driving high voltage power switching devices such as IGBTs. An aspect provides a method of adding a sensing capability to a device driver for driving at least one high voltage power switching device of a power switching apparatus having device side circuitry comprising said at least one device and said driver and having control side circuitry comprising a driver controller, the device driver arranged to be coupled to a said driver controller by a communications link, the device driver arranged to drive said at least one device on or off in response to a switching signal received on said communications link from the driver controller, the device driver further arranged to transmit an acknowledge signal to said driver controller in response to said received switching signal, said acknowledge signal detectable at said driver controller as a valid said acknowledge signal, the method comprising: providing a sense circuit to output an indication of a condition of said device side circuitry; providing a modulation circuit to modulate a said acknowledge signal dependent on said condition indication prior to said transmission such that said modulated acknowledge signal is said acknowledge signal to be transmitted by said device driver to said driver controller in response to said received switching signal and detectable at said driver controller as a valid said acknowledge signal. | 04-09-2015 |
20150097599 | CIRCUIT DEVICE AND ELECTRONIC DEVICE - The invention provides a motor driver including pre-drivers for a bridge circuit, delay circuits, and a delay setting register, wherein in order to suppress short-circuit current caused at the time of signal switching in the bridge circuit, the delay circuits are set based on delay time information in the delay setting register so as to control signals input into the pre-drivers. The signals input into the individual pre-drivers are delayed differently by the delay circuits based on the delay time information in the delay setting register, thereby preventing a short-circuit current flow caused by an offset in the timing of the individual pre-drivers being turned on and off. | 04-09-2015 |
20150097600 | PWM CONTROLLER WITH DRIVE SIGNAL ON CURRENT SENSING PIN - An integrated circuit (IC) having a pin having some dead-time when the pin is ineffective for use for a first purpose. The pin is used for a different purpose during that time wherein the pin is utilized to measure current when a main power transistor of a voltage converter is ON and used for driving an auxiliary or active-clamp when the main power transistor is OFF or used for generating a flag signal when the power transistor is OFF In addition, the integrated circuit (IC) could have a pin utilized for a first purpose to measure current during a first time when a power transistor of a voltage converter is ON and being utilized for a second purpose during the first time. | 04-09-2015 |
20150109031 | RC-IGBT WITH FREEWHEELING SIC DIODE - A semiconductor module as disclosed can include a reverse conducting transistor, with a gate, a collector and an emitter providing a reverse conducting diode between collector and emitter; at least one freewheeling diode connected antiparallel to the transistor having a forward voltage drop higher than the reverse conducting diode during a static state; and a controller to turn the transistor on and off. The controller can apply a pulse to the transistor gate before the reverse conducting diode enters a blocking state, such that when the reverse conducting diode enters the blocking state, a forward voltage drop of the reverse conducting diode is higher than of the at least one freewheeling diode. | 04-23-2015 |
20150109032 | SEMICONDUCTOR SWITCH AND WIRELESS DEVICE - According to one embodiment, a semiconductor switch includes a power supply, a driver, a switch section, and a first potential controller. The power supply includes a first potential generator and a second potential generator. The first potential generator is configured to generate a negative first potential. The second potential generator is configured to generate a positive second potential that a power supply potential is stepped down. The driver is supplied with the first potential and a third potential and configured to output at least one of the first potential and the third potential based on a terminal switching signal. The switch section is configured to connect a common terminal to any one of a plurality of radio frequency terminals according to an output of the driver. The first potential controller includes a divider and an amplifier. | 04-23-2015 |
20150116006 | DRIVING AN MOS TRANSISTOR WITH CONSTANT PRECHARGING - A drive circuit may be configured to switch on an MOS transistor by precharging an input capacitance of the MOS transistor with a substantially constant amount of charge in a precharging phase, and charging the input capacitance with a controlled charging current after the precharging phase. | 04-30-2015 |
20150116007 | VOLTAGE CLAMP ASSIST CIRCUIT - A transistor driven load circuit includes a gate driver transistor includes an internal voltage clamp, a controller providing a gate control signal operable to control a state of said gate driver, a load connected to said gate driver, such that said gate driver allows power to flow through the load when the gate driver is in an on state and prevents power from flowing through the load when the gate driver is in an off state, a clamp assist circuit connected in electrical parallel to the load, wherein the clamp assist circuit is operable to dissipate energy flowing through the load during a high energy event in a recirculating device. | 04-30-2015 |
20150116008 | BUILT-IN GATE DRIVER - A built-in gate driver includes a shift register provided in a non-display area of a panel, and configured to include first to gth stages outputting a scan signal, a clock supply line part configured to include m number of clock supply lines connected to the shift register, and a power supply line part configured to include n number of power supply lines connected to the shift register. At least one of the lines of the clock supply lines and the power supply lines are in a first side direction of the shift register, and the other at least one or more lines of the clock supply lines and the power supply lines are in a second side direction of the shift register. | 04-30-2015 |
20150116009 | GATE DRIVER, DRIVING METHOD THEREOF, AND CONTROL CIRCUIT OF FLAT PANEL DISPLAY DEVICE - The present invention discloses a gate driver which employs gate pulse modulation technology for improving an image quality, a driving method thereof, and a control circuit of a flat panel display device employing the gate driver. The gate driver is configured to modulate a gate pulse therein, and output the modulated gate pulse. | 04-30-2015 |
20150123714 | HIGHLY LINEAR BUFFER - Techniques relating to buffer circuits. In one embodiment, a circuit includes a first transistor configured as a source follower and a feed-forward path coupled to the gate terminal of the first transistor and the drain terminal of the first transistor. In this embodiment, the feed-forward path includes circuitry configured to decouple the feed-forward path from a DC component of an input signal to the gate terminal of the first transistor. In this embodiment, the circuitry is configured to reduce a drain-source voltage of the first transistor based on the input signal. In some embodiment, the feed-forward path includes a second transistor configured as a source follower and the source terminal of the second transistor is coupled to the drain terminal of the first transistor. In various embodiments, reducing the drain-source voltage may improve linearity of the first transistor. | 05-07-2015 |
20150123715 | POWER SEMICONDUCTOR CIRCUIT - A power semiconductor circuit comprising a power semiconductor switch having a control terminal and a first and a second load current terminal, and comprising a drive circuit. The power semiconductor circuit further comprises at least one of three further elements: | 05-07-2015 |
20150123716 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type. | 05-07-2015 |
20150123717 | Driving an Electronic Switch - An electronic switch is connected in series with a load dependent on an input signal. The electronic switch is operated in a first operation mode for a first time period after a signal level of the input signal has changed from an off-level to an on-level. The first operation mode includes driving the electronic switch dependent on a voltage across the load and dependent on a temperature of the electronic switch. The electronic switch is operated in a second operation mode after the first time period. The second operation mode includes driving the electronic switch dependent on the temperature according to a hysteresis curve. | 05-07-2015 |
20150123718 | SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN IGBT AND SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN DMOS - A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode. | 05-07-2015 |
20150130514 | APPARATUS AND METHOD FOR COMPENSATING FOR PROCESS VARIATION IN ELECTRONIC DEVICE - An electronic device for compensating for process variation is provided. The electronic device includes a first circuit configured to consume a current supplied to the first circuit, and a second circuit configured to control the current supplied to the first circuit. The second circuit is configured to generate a signal for controlling the current supplied to the circuit based on a frequency of a pulse signal generated using a second component that is of a same kind as a first component of the first circuit. | 05-14-2015 |
20150130515 | Multi-Gate High Voltage Device - A high voltage semiconductor device, particularly a device including a number of high breakdown voltage transistors having a common drain, first well, and insulating structure between the gate and the drain as well as method for using the same is provided in this disclosure. The high breakdown voltage transistors in the device together are in an elliptical shape. A second well region, gate structure, and a source region are partially overlapping discontinuous elliptical rings having at least two discontinuities or openings in a top view. The respective discontinuities or openings define each of the high breakdown voltage transistors. | 05-14-2015 |
20150130516 | DIODE LOAD DRIVING POWER SUPPLY APPARATUS - A main rectifying/smoothing circuit is connected to one end of a secondary winding of a transformer and a plurality of rectifying/smoothing circuits are connected to a plurality of central taps of the secondary winding. The rectifying/smoothing circuits are each equipped with a switch. In a preliminary driving period, a DSP, which controls the switches, reads forward drop voltages of first to third diode loads and sets feedback gains corresponding to the forward drop voltages. The DSP controls the switches based on the set feedback gains and begins rated driving. | 05-14-2015 |
20150137857 | DRIVING APPARATUS AND ELECTRIC POWER CONVERTER - A driving apparatus includes a first potential line that applies a first potential, a second potential line that applies a second potential, a coil including a first terminal and a second second terminal that is connected to a control terminal of a switching element, a charging switch connected between the first potential line and the first terminal of the coil, a clamp switch provided between the first potential line and the second terminal of the coil, a reverse-flow blocking diode connected in series with the clamp switch between the first potential line and the second terminal of the coil, and a control circuit that controls the charging switch and the clamp switch. | 05-21-2015 |
20150137858 | BUFFER CIRCUIT - In one embodiment, a buffer circuit includes a first transistor, a second transistor, a first current source, a third transistor, a fourth transistor, a second current source, and a third current source. The first transistor has a control terminal connected to an input terminal, and a first terminal connected to an output terminal. The second transistor has a control terminal connected to the input terminal, a first terminal connected to the output terminal, and a second terminal connected to a first power source. The third transistor has a first terminal connected to the output terminal. The fourth transistor has a first terminal connected to the second terminal of the first transistor, a control terminal applied bias voltage, and a second terminal connected to a control terminal of the third transistor. | 05-21-2015 |
20150137859 | INPUT CURRENT CONTROL METHOD, SWITCH CONTROL CIRCUIT AND POWER SUPPLY INCLUDING THE SWITCH CONTROL CIRCUIT - A switch control circuit that controls a switching operation of a power switch includes: an input current calculator generating an input sense voltage by integrating a sense voltage that indicates a switching current flowing to the power switch for a switching period unit of the power switch; and an input current comparator generating a gate-off signal according to a result of comparison between the input sense voltage and a predetermined input reference voltage, wherein the power switch is turned off according to the gate-off signal. | 05-21-2015 |
20150137860 | RESONANT-RECOVERY POWER REDUCTION TECHNIQUES FOR PULSE GENERATION - The disclosed embodiments provide a circuit for driving a capacitive load. The circuit includes a first inductor with an input terminal and a load terminal, wherein the load terminal is coupled to the capacitive load. The circuit also includes four or more switching devices. The switching devices may hold a voltage on the load terminal at zero volts. Next, the switching devices may charge the capacitive load through the first inductor until the voltage on the load terminal reaches a first input voltage supplied by a voltage source. The switching devices may then hold the voltage on the load terminal at the first input voltage. Finally, the switching devices may discharge the capacitive load through the first inductor until the voltage on the load terminal reaches zero volts. | 05-21-2015 |
20150145564 | Electronic Switching Device with Reduction of Leakage Currents and Corresponding Control Method - A method is used to control an electronic device that includes a switching unit having a main MOS transistor having a substrate, a first conducting electrode and a second conducting electrode coupled to an output terminal. The method includes controlling the main transistor in such a way as to put it into an on state or an off state such that, when the main transistor is in the on state, the substrate and the first conducting electrode of the main transistor are connected to an input terminal and, when the main transistor is in the off state, the first conducting electrode of the main transistor is isolated from the input terminal and a first bias voltage is applied to the first conducting electrode and a second bias voltage is applied to the substrate of the main transistor. | 05-28-2015 |
20150145565 | HIGH SPEED SYNC FET CONTROL - A circuit arrangement is disclosed for controlling the switching of a field effect transistor (FET). A current controlled amplifier may be configured to amplify a current in a current sense device to generate an amplified current, wherein the current in the current sense device indicates a current through the FET. A comparator may be coupled to the current sense amplifier to compare a voltage corresponding to the amplified current with a voltage reference and to generate a comparator output based on the comparison, wherein the comparator output controls whether the FET is on or off. | 05-28-2015 |
20150294734 | GATE DRIVER AND SHIFT REGISTER - A gate driver has a plurality of shift registers. Each of the shift registers has at least three input terminals, two signal input terminals, a pull-up circuit, a driving circuit, a stability pull-down control circuit, and a stability pull-down circuit. The three input terminals of each shift register receive three different clock signals. Accordingly, the driving circuit and the stability pull-down control circuit of each shift register are controlled according to the three clock signals, such that a glitch causing by the coupling effect of the parasitic capacitor of the driving circuit is avoided and the stability of the gate driver is improved. | 10-15-2015 |
20150295574 | SIGNAL RECEPTION CIRCUIT AND ISOLATED SIGNAL TRANSMISSION DEVICE - A signal reception circuit according to an aspect of the present disclosure includes: an input terminal; an input reference terminal; an output terminal; an output reference terminal; a normally-on type transistor that includes a first terminal connected to the output terminal, a second terminal connected to the output reference terminal, and a control terminal; a first detector circuit that detects an input signal applied between the input terminal and the input reference terminal, to apply an output signal between the output terminal and the output reference terminal; and a second detector circuit that detects the input signal, to apply a negative voltage pulse to the control terminal of the transistor with the output reference terminal as a reference. | 10-15-2015 |
20150303898 | SYSTEMS AND METHODS FOR REGULATING OUTPUT CURRENTS OF POWER CONVERSION SYSTEMS - Systems and methods are provided for regulating a power conversion system. An example system controller includes a first controller terminal and a second controller terminal. The first controller terminal is configured to receive a first signal associated with an input signal for a primary winding of a power conversation system. The second controller terminal is configured to output a drive signal to a switch to affect a first current flowing through the primary winding of the power conversion system, the drive signal being associated with an on-time period, the switch being closed during the on-time period. The system controller is configured to adjust a duration of the on-time period based on at least information associated with the first signal. | 10-22-2015 |
20150303911 | ANALOG BREAK BEFORE MAKE SYSTEM, METHOD AND APPARATUS - A system and method of providing an analog make before break circuit includes a first transistor coupled in series with a second transistor, the first transistor being configured for conducting a high portion of an input signal, the second transistor being configured for conducting a low portion of the input signal. A third transistor is configured to interrupt a connection between the input signal and a first transistor input node, the third transistor having a third transistor threshold voltage between of about 90 and about 110 percent of a second transistor threshold voltage. A fourth transistor is configured to interrupt a connection between the input signal and a second transistor input node, the fourth transistor having a fourth transistor threshold voltage of between about 90 and about 110 percent of a first transistor threshold voltage. | 10-22-2015 |
20150311884 | CHARGE-RECYCLING CIRCUITS INCLUDING SWITCHING POWER STAGES WITH FLOATING RAILS - In one embodiment, a circuit comprises a first switching transistor and a second switching transistor. The first switching transistor and the second switching transistor are coupled in series between an input voltage and ground and having a common node therebetween to provide a switching output. A first switching circuit selective couples a gate of the first switching transistor to the input voltage and a first mid-level voltage supply. A second switching circuit selectively couples a gate of the second switching transistor to a second mid-level voltage supply and ground. A charge-recycling circuit is coupled to the gate of the first switching transistor, the gate of the second switching transistor, the first mid-level voltage supply, and the second mid-level voltage supply to selectively recycle charge between the first mid-level voltage supply and the second mid-level voltage supply. | 10-29-2015 |
20150311886 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - The circuit includes a first wiring for supplying a power supply potential to a signal processing circuit, a transistor for controlling electrical connection between the first wiring and a second wiring for supplying the a power supply potential, and a transistor for determining whether or not the first wiring is grounded. At least one of the two transistors is a transistor whose channel is formed in the oxide semiconductor layer. This makes it possible to reduce power consumption due to cutoff current of at least one of the two transistors. | 10-29-2015 |
20150318843 | GATE CONTROL CIRCUIT - An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor. | 11-05-2015 |
20150318851 | DEVICES AND SYSTEMS COMPRISING DRIVERS FOR POWER CONVERSION CIRCUITS - An electronic switching system and device comprising driver circuits for power transistors are disclosed, with particular application for MOSFET driven, normally-on gallium nitride (GaN) power transistors. Preferably, a low power, high speed CMOS driver circuit with an integrated low voltage, lateral MOSFET driver is series coupled, in a hybrid cascode arrangement, to a high voltage GaN HEMT and provides for improved control of noise and voltage transients. Monitoring and control functions, including latching and clamping, are based on monitoring of V | 11-05-2015 |
20150326219 | DRIVING CIRCUIT FOR IGBT MODULE - A driving circuit for an IGBT module is provided. The driving circuit includes: a gate driving resistor connected with the IGBT module; a driving module connected with the gate driving resistor; an integrating circuit connected with the driving module, in which the integrating circuit comprises an equivalent resistor and a first capacitor connected in series with the equivalent resistor, and a time constant of the integrating circuit is adjusted by changing a resistance of the equivalent resistor; a first optical coupler connected with the integrating circuit; and a micro control unit, connected with the first optical coupler. | 11-12-2015 |
20150333742 | SEMICONDUCTOR DEVICE - A semiconductor high-side driver including; an input terminal; an output terminal to be coupled to a load element; an output MOS transistor having a drain coupled to a power supply terminal, a source coupled to the output terminal and a gate; a sense MOS transistor having a drain coupled to the power supply terminal, a gate coupled to the gate of the output MOS transistor and a source; a control circuit coupled to the input terminal and provides a control signal to the gate of the output MOS transistor; and a voltage detection circuit which includes: a threshold voltage generation circuit having a first terminal coupled to the power supply terminal and a second terminal which generates a voltage lower than a voltage of the power supply terminal by a threshold voltage; and a comparator. | 11-19-2015 |
20150341027 | CIRCUIT ARRANGEMENT AND METHOD FOR GENERATING A DRIVE SIGNAL FOR A TRANSISTOR - Disclosed is a circuit arrangement for generating a drive signal for a transistor. In one embodiment, the circuit arrangement includes a control circuit that receives a switching signal, a driver circuit that outputs a drive signal, and at least one transmission channel. The control circuit transmits, depending on the switching signal for each switching operation of the transistor, switching information and switching parameter information via the transmission channel to the driver circuit. The driver circuit generates the drive signal depending on the switching information and depending on the switching parameter information. | 11-26-2015 |
20150349776 | HIGH SIDE DRIVER COMPONENT AND METHOD THEREFOR - A high side driver component for generating a drive signal at an output thereof for driving a high side switching device within a high voltage driver circuit. The high side driver component is arranged to operate in at least one reduced slew rate mode in which at least one drive stages is arranged to be in a non-drive state, and the high side driver component further comprises at least one discharge protection component arranged to, when the high side driver component is operating in the at least one reduced slew rate mode, receive an indication of the high voltage driver circuit being in an idle state, and cause the second switching device within the at least one drive stage in a non-drive state to be turned on, in response to the indication of the high voltage driver circuit being in an idle state. | 12-03-2015 |
20150358000 | DRIVE CIRCUIT AND SEMICONDUCTOR APPARATUS - A drive circuit includes a gate drive node; a power source node; an output transistor configured to be connected between the gate drive node and the power source node, and to flow a current into the gate drive node; an input transistor configured to form a current mirror with the output transistor, and to have a smaller size than the output transistor; an operational amplifier configured to output a control voltage depending on a potential difference between a voltage received as input depending on a voltage of the gate drive node, and a constant voltage lower than a voltage of the power source node; a constant current source configured to generate a constant current; and a control transistor configured to control a current flowing in the input transistor to be less than or equal to the constant current, depending on the control voltage. | 12-10-2015 |
20150358011 | ADAPTIVE EDGE-RATE BOOSTING DRIVER WITH PROGRAMMABLE STRENGTH FOR SIGNAL CONDITIONING - A signal conditioner that includes a transition-detection module and a current-injection module. The transition-detection module is configured to receive a pair of differential signals from a data line and generate one or more comparator output signals and a transition-indication signal to indicate whether a transition has been detected on the differential signals. The current-injection module is configured to receive the comparator output signals and transition-indication signal from the transition-detection module, and generate appropriate currents for injection into the data line to boost edge rates of the differential signals when the transition-detection module detects a transition of the differential signals or remain high impedance when no transition occurs on the differential signals. | 12-10-2015 |
20150358013 | GATE DRIVING CIRCUIT - A temperature detection circuit for detecting a temperature of a switching element, a current source for causing a forward current to flow to the temperature detection circuit, an amplifier circuit for amplifying a forward voltage of the temperature detection circuit, a current adjustment circuit for adjusting a magnitude of a gate current to the switching element on the basis of an output voltage of the amplifier circuit, and a drive circuit for receiving an external signal and turning ON/OFF the switching element, are included. The magnitude of the gate current caused to flow from the current adjustment circuit to the gate electrode of the switching element is adjusted on the basis of a change in a magnitude of the forward voltage corresponding to a change in the temperature of the temperature detection circuit. | 12-10-2015 |
20150365083 | CIRCUIT AND METHOD FOR DRIVING A POWER SEMICONDUCTOR SWITCH - A drive circuit for driving a semiconductor switch includes an overload detector circuit connected to the semiconductor switch and designed to detect an overload state of the semiconductor switch. The drive circuit further includes a driver circuit connected to a control terminal of the semiconductor switch and designed to generate, upon detection of an overload state, a driver signal having a level such that the semiconductor switch is switched off or switch-on is prevented. The driver circuit is further designed to generate a driver signal for driving the semiconductor switch according to a control signal, wherein for switching on the transistor at a first instant a driver signal is generated at a first level and, if no overload state is detected up to a predefined time period having elapsed, the level of the driver signal is increased to a second level. | 12-17-2015 |
20150365087 | DUTY CYCLE-CONTROLLED LOAD SWITCH - A switch includes a power transistor configured to switch an input voltage to a load. The switch further includes a charge pump and a duty cycle controller. The charge pump is coupled to the power transistor and includes an enable input to cause the charge pump to be turned on and off. The duty cycle controller is coupled to the charge pump and is configured to duty cycle the charge pump based on a comparison of a signal of a gate of the power transistor to a reference signal. | 12-17-2015 |
20150372672 | POWER DEVICE DRIVE CIRCUIT - A power device drive circuit reduces the short-circuit resistance of a power device that switches an input voltage. The power device drive circuit includes an output amplifier that applies a control voltage to a control terminal of the power device so as to be turned on and off, and an internal power supply circuit that generates a drive voltage of the output amplifier in accordance with a change in the input voltage, thereby causing the control voltage to change. In particular, the internal power supply circuit reduces the drive voltage of the output amplifier when the input voltage rises, thereby reducing the short-circuit current of the power device. | 12-24-2015 |
20150372678 | ADAPTIVE BLANKING TIMER FOR SHORT CIRCUIT DETECTION - A gate driver IC for driving an NMOS transistor having a drain coupled through a load to a power supply. A gate driver output drives the gate of the NMOS transistor. A comparator receives the drain voltage of the NMOS transistor and compares it to a reference voltage representative of a short circuit condition between the drain and the power supply. The comparator outputs a first value if the drain voltage is greater than the reference voltage and outputs a second value if the drain voltage is less than or equal to the reference voltage. Control circuitry receives the output of the first comparator and pulls the voltage of the gate driver output low if the comparator output is of the first value. Adaptive masking circuitry is operable, upon an application of an “on” signal to the gate driver output, to mask the output of the comparator such that a condition of the drain voltage being greater than the reference voltage does not cause the control circuitry to pull the voltage of the gate driver output low. The adaptive masking circuitry detects a Miller plateau in the gate voltage of the external NMOS transistor. The adaptive masking circuitry stops masking the output of the comparator after the end of the Miller plateau. | 12-24-2015 |
20150381148 | DRIVER CIRCUIT WITH GATE CLAMP SUPPORTING STRESS TESTING - A generator circuit is coupled to apply a control signal the gate terminal of a power transistor driving an output node. A reference voltage is generated having a first voltage value as the reference for the control signal and having a second, higher, voltage value for use in stress testing. A clamping circuit is provided between the reference voltage and the power transistor gate to function in two modes. In one mode, the clamping circuit applies a first clamp voltage to clamp the voltage at the gate of the power transistor when the generator circuit is applying the control signal. In another mode, the clamping circuit applies a second, higher, clamp voltage to clamp the gate of the power transistor during gate stress testing. | 12-31-2015 |
20150381150 | INCREASING OUTPUT AMPLITUDE OF A VOLTAGE-MODE DRIVER IN A LOW SUPPLY VOLTAGE TECHNOLOGY - An apparatus for driving a load using a low supply voltage includes a voltage-mode driver and a current source arrangement. The voltage-mode driver provides a desired termination impedance and a first portion of a desired output current to the load. The current source arrangement provides a second portion of the desired output current. The desired output current generates a predetermined voltage swing across the load, while the voltage-mode driver and the current source arrangement are powered by the low supply voltage. | 12-31-2015 |
20150381151 | CONTROL CIRCUIT OF SEMICONDUCTOR SWITCHING ELEMENT - A control circuit of a semiconductor switching element includes a gate driving circuit and a negative power source circuit. The gate driving circuit drives the semiconductor switching element disposed on a power supply path of an inductive load. The negative power source circuit is connected between output terminals of the semiconductor switching element. The negative power source circuit includes a series circuit of a capacitor and a diode in a forward direction connected from a negative potential side terminal to a positive potential side terminal of the output terminals. A common connection point of the capacitor and the diode in the negative power source circuit is connected to a negative power source terminal of the gate driving circuit. | 12-31-2015 |
20150381155 | INTEGRATED CIRCUIT - An integrated circuit includes: a latch unit suitable for inverting a voltage level of a first node and driving a second node with the inverted voltage level of the first node, and inverting a voltage level of the second node and driving the first node with the inverted voltage level of the second node; and a sink unit coupled with one or more among the first and second nodes, and suitable for sinking a charge of the coupled node. | 12-31-2015 |
20150381159 | Load Drive Control Device - Provided is a load drive slope control device that can reduce EMI noise, and power loss and heat generation when a drive transistor is turned on and off, and can prevent excessive high temperature-induced damage to the drive transistor at an excessive high temperature. Disclosed is a load drive control device including: a drive transistor that drives a load; a pre-driver that drives the drive transistor via an ON/OFF control terminal of the drive transistor; a capacitor that is connected to an input side of the pre-driver, a first current source that is ON/OFF controlled by a first signal, and generates current which is charged to the capacitor; and a second current source that is ON/OFF controlled by a second signal, and generates current for discharging the capacitor, in which an output voltage from the pre-driver is changed by charging or discharging the capacitor, the drive transistor is turned on and off by the output voltage from the pre-driver, and a linear ascending gradient and a linear descending gradient of the waveform of a voltage driving the load are obtained by turning on and off the drive transistor. | 12-31-2015 |
20150381161 | GLITCH SUPPRESSION IN AN AMPLIFIER - A driver circuit includes detectors responsive to the operating region that a driven switch is operating in. The driver circuit is operative to drive the gate of the driven switch at a speed responsive to the output of the detectors. | 12-31-2015 |
20150381166 | GATE DRIVE CIRCUIT WITH A VOLTAGE STABILIZER AND A METHOD - A gate drive circuit creates a bipolar voltage to a gate of an IGB power transistor, and compensates for Miller currents of the IGB power transistor. The compensating is performed by a switching element connected in series with a capacitor between the gate (X | 12-31-2015 |
20150381170 | SEMICONDUCTOR DEVICE - The present invention has an object to provide a semiconductor device that has protective functions and is capable of achieving miniaturization and cost reduction. A semiconductor device according to the present invention includes a switching element, a drive circuit, and a control circuit. When a high-level drive control signal is output from the drive circuit, the control circuit stops driving of the switching element and charges an electric charge storing capacitor. When a low-level drive control signal is output from the drive circuit, the control circuit drives the switching element using electric charges stored in the electric charge storing capacitor. | 12-31-2015 |
20160006427 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device capable of preventing a malfunction of a high-side gate driver circuit that is caused by a negative voltage surge. A diode is connected between a p-type bulk substrate configuring a semiconductor layer, and a first potential (GND potential), and a signal is transmitted from a control circuit that is formed in an n diffusion region configuring a first semiconductor region through a first level down circuit and a first level up circuit to a high-side gate driver circuit that is formed in an n diffusion region configuring a second semiconductor region. As a result, a malfunction of the high-side gate driver circuit that is caused by a negative voltage surge can be prevented. | 01-07-2016 |
20160006428 | SWITCHING CIRCUITS HAVING FERRITE BEADS - A circuit includes an electronic component package that comprises at least a first lead, a III-N device in the electronic component package, a gate driver, and a ferrite bead. The III-N device comprises a drain, gate, and source, where the source is coupled to the first lead. The gate driver comprises a first terminal and a second terminal, where the first terminal is coupled to the first lead. The ferrite bead is coupled between the gate of the III-N transistor and the second terminal of the gate driver. When switching, the deleterious effects of the parasitic inductance of the circuit gate loop are mitigated by the ferrite bead. | 01-07-2016 |
20160006430 | Bidirectional Two-Base Bipolar Junction Transistor Devices, Operation, Circuits, and Systems with Diode-Mode Turn-On and Collector-Side Base Driven - Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. | 01-07-2016 |
20160018445 | TEST CIRCUIT AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME - A test circuit includes a through via test unit configured to be set to a first resistance value in response to a first test control signal and to a second resistance value in response to the first test control signal and a second test control signal, and form a current path including a through via that electrically connects a first chip and a second chip; and a test measurement unit configured to supply a test voltage to the through via and measure a current flowing through the through via. | 01-21-2016 |
20160020688 | ELECTRONIC DEVICE - There is provided an electronic device comprising: a plurality of switching elements connected to a power supply; a plurality of specific information storage units provided for the corresponding switching elements and configured to store specific information of respective corresponding switching elements; a processing unit configured to control the switching elements; and a communication line disposed between the specific information storage units and the processing unit, through which the specific information of the respective switching elements is sent from the specific information storage units to the processing unit. | 01-21-2016 |
20160020762 | PREVENTING VOLTAGE PULSE PROPAGATION IN A DISABLED CAPACITIVE FEEDBACK SLEW-CONTROLLED SWITCH - Transient voltages are not propagated through a P-channel MOSFET used as a switch with output slew rate control feedback, by connecting a low or near-zero impedance across the source and gate terminals of the device whenever the MOSFET is supposed to be off. The low or near-zero impedance is provided by a second P-channel MOSFET connected across the source and gate of the MOSFET switch. | 01-21-2016 |
20160020765 | SEMICONDUCTOR SWITCH - A semiconductor switch is configured to conduct or cutoff a signal path from its first terminal to its second terminal. An enhancement-type first transistor is arranged between the first terminal and the second terminal. A first bias circuit is connected to apply a gate voltage V | 01-21-2016 |
20160028393 | FIELD-EFFECT TRANSISTOR DRIVER - A field-effect transistor (FET) driver is provided that includes an input modulator and an isolating capacitor. The input modulator is configured to output an alternating current (AC) signal. The isolating capacitor is configured to receive the AC signal as an input and to store a charge based on the AC signal in a filter capacitor. The filter capacitor is configured to drive a capacitor-driven FET based on the stored charge. | 01-28-2016 |
20160036315 | DRIVE CIRCUIT AND SEMICONDUCTOR DEVICE - Malfunction can be reliably avoided even when a signal that drives a high side power device is not normally transmitted in a level shift circuit. In a drive circuit, a pulse generator circuit generates a set signal and reset signal that causes a high side power device to be turned on or off. The pulse generator circuit provides set and reset signals, via a level shift circuit, to a high side drive circuit. A high side potential (a high side reference potential or a high side power supply potential) is detected by a high side potential detector circuit. A high side potential determination circuit determines a change in potential that impedes the transmission of the set signal or reset signal in the level shift circuit, and causes the pulse generator circuit to regenerate the set signal or reset signal when the timing of the detection coincides with the timing at which the set signal or reset signal is generated. | 02-04-2016 |
20160036433 | DRIVING DEVICE AND SWITCHING CIRCUIT CONTROL METHOD - A driving device includes a switching circuit configured to have switching elements disposed on a high side and a low side, the switching element including a first electrode, a second electrode, and a reverse conducting element disposed between the first electrode and the second electrode; and a determination part configured to determine whether to permit the switching element to turn on, based on a result obtained by detecting a voltage between the first electrode and the second electrode, in a period during which the switching elements on both sides are off. | 02-04-2016 |
20160036435 | A GATE DRIVE CIRCUIT FOR A SEMICONDUCTOR SWITCH - The present application is directed to drive arrangement for semiconductor switches and in particular to a method of driving the gate of a switch with pulses corresponding to turn-on and turn-off commands through separate turn-on and turn-off transformers. The application provides a fail safe reset feature, a more efficient turn-on circuit and an energy recovery circuit for recovering energy from the gate upon turn-off. The application also provides a novel arrangement for assembling multiple pulse transformers on a circuit board. | 02-04-2016 |
20160036436 | ACTIVE DIODE DRIVER - An active diode driver for operating a switch of an active rectifier using an active diode is provided. The active diode driver may first control a soft turn-on of the switch and secondly control a hard turn-on of the switch, thereby making it possible for the switch to be softly turned-on. | 02-04-2016 |
20160043072 | SYSTEMS AND METHODS FOR INTEGRATING BOOTSTRAP CIRCUIT ELEMENTS IN POWER TRANSISTORS AND OTHER DEVICES - Embodiments relate to bootstrap circuits integrated with at least one other device, such as a power transistor or other semiconductor device. In embodiments, the bootstrap circuit can comprise a bootstrap capacitor and a bootstrap diode, or the bootstrap circuit can comprise a bootstrap capacitor and a bootstrap transistor. The bootstrap capacitor comprises a semiconductor-based capacitor, as opposed to an electrolytic, ceramic or other capacitor, in embodiments. The integration of the bootstrap circuit with another circuit or device, such as a power transistor device in one embodiment, is at a silicon-level in embodiments, rather than as a module-like system-in-package of conventional approaches. In other words, the combination of the bootstrap circuit elements and power transistor or other device forms a system-on-silicon, or an integrated circuit, in embodiments, and additionally can be arranged in a single package. | 02-11-2016 |
20160043708 | SEMICONDUCTOR DEVICE - A semiconductor device comprising: a substrate having: a first terminal region; a second terminal region; a first extension region that extends from the first terminal region towards the second terminal region; a second extension region that extends from the second terminal region towards the first terminal region; a channel region between the first and second extension regions; a gate conductor that overlies the channel region of the substrate, the gate conductor configured to control conduction in the channel region; a first control conductor that overlies at least a portion of the first extension region, the first control conductor configured to control conduction in the first extension region; and a second control conductor that overlies at least a portion of the second extension region, the second control conductor configured to control conduction in the second extension region, wherein the first and second control conductors are electrically isolated within the semiconductor device from the gate conductor. | 02-11-2016 |
20160043714 | SEMICONDUCTOR DEVICE - The present invention is provided to easily manufacture an IPD as any of a high-side switch and a low-side switch. A level shifting circuit is coupled to an input terminal, a first terminal, and a grounding terminal. Drive power of the level shifting circuit is supplied from the first terminal. An output signal of the level shifting circuit is input to a driver circuit. The driver circuit is coupled to the first terminal and a second terminal. Drive power of the driver circuit is supplied from the first terminal. A transistor has a gate electrode coupled to the driver circuit, a source coupled to the second terminal, and a drain coupled to a third terminal. | 02-11-2016 |
20160043716 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A semiconductor device having excellent data retention characteristics. A transistor with a low off-state current is utilized to save and retain data stored in a memory circuit, and a potential to be applied to a back gate of the transistor is applied from a battery provided for each memory circuit. The potential applied to the back gate of the transistor and a potential for charging the battery are generated in a voltage generation circuit. The battery is charged utilizing power gating of the memory circuit and data retention characteristics is improved. | 02-11-2016 |
20160043720 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Provided is a semiconductor integrated circuit device that has a high-voltage analog switch circuit and is operable at a low power-supply voltage. | 02-11-2016 |
20160043722 | TRANSISTOR SWITCH WITH BACK-GATE BIASING - Driving a back-gate of a transistor with a follower signal that corresponds to an information signal. At least some of the illustrative embodiments are methods including: passing an information signal from a source terminal to an drain terminal of a main field effect transistor (FET), the information signal has a peak-to-peak voltage; generating a follower signal that corresponds to the information signal, the follower signal electrically isolated from the information signal, and the follower signal has a peak-to-peak voltage lower than the peak-to-peak voltage of the information signal; and applying the follower signal to a back-gate of the main FET. | 02-11-2016 |
20160049863 | OSCILLATOR APPLIED TO A CONTROL CIRCUIT OF A POWER CONVERTER AND CONTROL METHOD THEREOF - An oscillator applied to a control circuit of a power converter includes a compensation module and an oscillation module. The compensation module outputs or sinks an adjustment current according to a compensation voltage corresponding to a load, a direct current voltage of a primary side of the power converter, and a reference voltage. The oscillation module outputs a clock signal according to the compensation voltage, a control voltage, and the adjustment current. The control circuit generates a gate control signal to a power switch of the primary side according to the clock signal. When the compensation voltage is less than a first predetermined voltage, a frequency of the gate control signal is a first fixed value, and when the compensation voltage is between the first predetermined voltage and a second predetermined voltage and greater than the second predetermined voltage, the frequency is varied with the compensation voltage. | 02-18-2016 |
20160056796 | INTEGRATED CIRCUITS - An integrated circuit may include a first semiconductor device and a second semiconductor device. The first semiconductor device may compare a first internal voltage signal with a reference voltage signal received from outside the first semiconductor device to control a drive of the first internal voltage signal. The second semiconductor device may compare a second internal voltage signal with the first internal voltage signal controlled by the first semiconductor device to control a drive of the second internal voltage signal. | 02-25-2016 |
20160056800 | SEMICONDUCTOR DEVICE HAVING DRIVER STRUCTURE FOR REDUCING CIRCUIT AREA - The semiconductor device comprises a controller; an X-axis driver; a Y-axis driver; and an output controller receiving the X-axis and Y-axis output signals and generating driving signals. | 02-25-2016 |
20160056817 | POWER TRANSISTOR WITH DISTRIBUTED DIODES - An electronic circuit is disclosed. The electronic circuit includes a distributed power switch. In some embodiments, the electronic circuit also includes one or more of a distributed gate driver, a distributed gate pulldown device, a distributed diode, and a low resistance gate and/or source connection structure. An electronic component comprising the circuit, and methods of manufacturing the circuit are also disclosed. | 02-25-2016 |
20160065047 | SWITCHING SCHEME TO EXTEND MAXIMUM INPUT VOLTAGE RANGE OF A DC-TO-DC VOLTAGE CONVERTER - A circuit includes a first transistor having a first current electrode coupled to a first power supply node, a second current electrode coupled to a switching node; a second transistor having a first current electrode coupled to the switching node, a second current electrode coupled to a second power supply node; an inductor having a first terminal coupled to the switching node, a second terminal coupled to an output node; a third transistor having a first current electrode coupled to the output node, a second current electrode coupled to the switching node; a driver circuit configured to transition the switching node from a first voltage to a second voltage by turning on the third transistor to couple the output node to the switching node during a first time period, turning on the first transistor to couple the first power supply node to the switching node during a second time period. | 03-03-2016 |
20160065203 | System and Method for a Switch Having a Normally-on Transistor and a Normally-off Transistor - In accordance with an embodiment, a circuit includes a normally-off transistor, and a normally-on transistor comprising a second load path terminal coupled to a first load path terminal of the normally off transistor, and a control terminal coupled to a second load path terminal of the normally-off transistor. The circuit further includes a driver circuit having an output coupled to a control terminal of the normally off transistor, a first power supply terminal configured to be coupled to a first power supply terminal of a first power supply, and a second power supply terminal configured to be coupled to a second power supply terminal of a second power supply. The second load path terminal of the normally on transistor is further configured to be coupled to a second power supply terminal of the first power supply and to a first power supply terminal of the second power supply. | 03-03-2016 |
20160065204 | System and Method for Generating an Auxiliary Voltage - In accordance with an embodiment, a circuit includes a first normally-on transistor having a drain coupled to a first switching output node, a normally-off transistor having a drain coupled to a source of the first normally-on transistor, a driver circuit configured to receive a switching signal, the driver circuit having an output coupled to a gate of the first normally-on transistor, and a second normally-on transistor having a drain terminal coupled to a supply node, a gate terminal coupled to the output of the driver circuit, and a source terminal configured to provide an auxiliary voltage. | 03-03-2016 |
20160072496 | SEMICONDUCTOR SWITCHING DEVICE - A switching element (A) is connected in parallel to a load (L). A switching element (B) is connected between the switching element (A) and a grounding point. The drive circuit ( | 03-10-2016 |
20160072498 | GATE DRIVER FOR ISOLATED INPUT SWITCHING ELEMENT - A gate driver driving a switching device is disclosed. The gate driver includes a capacitor which is coupled to the input of the switching device. The gate drive power consumption is reduced by this additional capacitor. | 03-10-2016 |
20160072501 | VOLTAGE CONTROLLER - A rising time detecting circuit detects a rising time of an output voltage, and generates a rising time voltage according to the rising time. A rising time comparing circuit compares the rising time voltage with a target rising voltage, and outputs a rising comparison signal showing a compared result. A FET driving circuit controls an upper MOSFET based on the rising comparison signal. A rising regulating circuit regulates a change speed of the rising time voltage according to a rising regulating signal. | 03-10-2016 |
20160072503 | GATE DRIVE CIRCUIT - A gate drive circuit may include an output transistor that supplies a constant current to a gate of a switching element and drives the switching element on. A pre-driver may have a CMOS configuration including a p-channel MOS-FET and n-channel MOS-FET. The pre-driver may receive a gate control signal that drives the output transistor on/off. A reference current source may controls the gate voltage of a constant current transistor and provide a constant current from the constant current transistor A buffer amplifier may apply the gate voltage of the constant current transistor as the operating reference voltage of the pre-driver. | 03-10-2016 |
20160079967 | POWER SEMICONDUCTOR DEVICE AND GATE DRIVER CIRCUIT - A power semiconductor device includes a first output transistor connected to a first node at a first end of a current path thereof. The power semiconductor device further includes a second output transistor connected to a second end of the current path of the first output transistor at a first end of a current path thereof and to a second node at a second end of the current path. The power semiconductor device further includes a gate driver circuit that controls the first and second output transistors. | 03-17-2016 |
20160079974 | CURRENT CONTROL CIRCUIT - A current control circuit includes a first drive switching device, a gate power source, a control switching device, a first resistor, an operational amplifier, and a switching circuit. The operational amplifier includes: an output terminal connected to the control switching device; a non-inverting input terminal; and an inverting input terminal configured to receive a reference potential. The switching circuit is configured to: input a value based on a potential difference between both ends of the first resistor to the non-inverting input terminal when a current flowing through the first drive switching device is equal to or smaller than a threshold level; and input a value based on a potential on a current pathway between the control switching device and the first drive switching device to the non-inverting input terminal when the current flowing through the first drive switching device is greater than the threshold level. | 03-17-2016 |
20160079975 | HALF BRIDGE DRIVER CIRCUITS - GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. | 03-17-2016 |
20160087622 | SEMICONDUCTOR DEVICE - The semiconductor device according to one embodiment includes a power transistor and a sense transistor connected in parallel with each other, a first operational amplifier having a non-inverting input terminal connected to an emitter of the sense transistor and an inverting input terminal connected to an emitter of the power transistor, a resistor element having one end connected to the emitter of the sense transistor and another end connected to a first node, and an adjustment transistor placed between the first node and a low-voltage power supply. The first operational amplifier adjusts a current flowing through the adjustment transistor so that an emitter voltage of the power transistor and an emitter voltage of the sense transistor are substantially the same. | 03-24-2016 |
20160087623 | GATE DRIVER - In a gate driver for driving a first transistor, the gate driver includes first, second and third push-pull circuits, in each of the push-pull circuits, two transistors are connected in series, an output terminal of the first push-pull circuit is connected to the gate of the first transistor, an output terminal of the second push-pull circuit is connected to the gate of a second transistor included in the first push-pull circuit and an output terminal of the third push-pull circuit is connected to the gate of a third transistor included in the first push-pull circuit. | 03-24-2016 |
20160087625 | GATE CONTROL DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR CONTROLLING SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiments controls a gate voltage to be applied to a gate electrode of a junction field effect transistor including a source electrode, a drain electrode, and the gate electrode, the transistor having a first threshold voltage at which the transistor is turned on, and a second threshold at which conductivity modulation occurs in the transistor so as to make the gate voltage equal to or higher than the second threshold voltage when a forward current in a direction from the drain electrode toward the source electrode flows, and so as to make the time variation in gate voltage have a point from which the rate of the time variation starts decreasing at a voltage between the second threshold voltage and the first threshold voltage when the forward current to be shut down. | 03-24-2016 |
20160087626 | POWER CONTROL CIRCUIT - A power control circuit according to one embodiment includes an H-bridge circuit formed using a plurality of power transistors. The power transistors are respectively connected to current measurement circuits that measure currents flowing through the power transistors. Each of the power transistors includes a main emitter and a sense emitter through which a current corresponding to a current flowing through the main emitter flows. Each of the current measurement circuits measures a current flowing through each of the power transistors by using a current flowing through the sense emitter included in the power transistor. A control circuit controls the power transistors based on current values respectively measured by the current measurement circuits. | 03-24-2016 |
20160087633 | DIFFERENTIAL DRIVER WITH PULL UP AND PULL DOWN BOOSTERS - A driver includes first and second resistors coupled to a supply voltage and coupled to pairs of main transistors at positive and negative output nodes. The first and second pairs of main transistors provide emphasis and de-emphasis on the positive and negative output nodes. The driver also includes a delay inverter, a pull up booster and a pull down booster. The delay inverter delays and inverts each of a pair of differential input signals to provide delayed and inverted differential signals. The pull up booster provides a bypass current path that bypasses the first and second resistors but includes at least some of the first and second pairs of main transistors. The pull down booster provides an additional current path from the supply voltage through the first or second resistor to ground. | 03-24-2016 |
20160094202 | OUTPUT DRIVER CIRCUIT WITH AUTO-EQUALIZATION BASED ON DRIVE STRENGTH CALIBRATION - Systems and methods for equalizing an output driver circuit based on information from calibration of the output impedance of the driver circuit are disclosed. Settings that result from the calibration are referred to as calibration codes. The output driver circuit includes multiple pull-up elements that are enabled or disabled to produce a desired output impedance when the output is high and multiple pull-down elements that are enabled or disabled to produce the desired output impedance when the output is low. The number of pull-up elements that are enabled and the number of pull-down elements that are enabled is set by calibration. The results of the calibration (i.e., the number of enabled elements for the pull-up and the number of enabled elements for the pull-down) are used to set controls for an amount of pre-emphasis and/or to set controls for output slew rates. | 03-31-2016 |
20160094216 | Drive Circuit for Reverse-Conducting IGBTs - A drive circuit includes a first output node for connection to the control electrode of the semiconductor switch, a voltage supply circuit, and a first switching stage connected to the voltage supply and a second switching stage connected to the voltage supply. A first resistor network is connected between the first switching stage and the first output node. A second resistor network is connected between the second switching stage and the first output node. A control logic is designed to generate control signals for the guiding of the first switching stage and the second switching stage in such a way that in a first operating mode of the semiconductor switch the semiconductor switch is driven only via the first resistor network, and in a second operating mode of the semiconductor switch the semiconductor switch is driven only via the second resistor network or both resistor networks. | 03-31-2016 |
20160094362 | CONTROLLER AREA NETWORK BUS TRANSMITTER WITH COMPLEMENTARY SOURCE FOLLOWER DRIVER - A Controller Area Network (CAN) driver (a transmitter) includes a conventional main driver having an open drain first driver MOSFET, for pulling up a first conductor of a bus in a dominant state, and an open drain second driver MOSFET, for pulling down a second conductor of the bus in the dominant state. Since it is difficult to perfectly match the driver MOSFET characteristics for conducting exactly equal currents during turning on and turning off, significant common mode fluctuations occur, resulting in electromagnetic emissions. Source followers are respectively connected in parallel with the first driver MOSFET and the second driver MOSFET for creating a low common mode loading impedance on the conductors during times when the main driver MOSFETs are turning on and turning off to greatly reduce any common mode fluctuations caused by the main driver MOSFETs. | 03-31-2016 |
20160099650 | GATE-POWER-SUPPLY DEVICE AND SEMICONDUCTOR CIRCUIT BREAKER USING SAME - A gate-power-supply device is provided with an inverter circuit, a transformer, and rectifier circuits. The device includes secondary-side parallel capacitors, connected in parallel to secondary-side coils of the transformer, for cancelling inductance components of the secondary-side coils at the drive frequency of the inverter circuit. The device includes a primary-side series capacitor, connected in series to a primary-side coil of the transformer, for cancelling the imaginary term (inductance component) of the combined impedance of the gate drivers, the rectifier circuits, the secondary-side parallel capacitors, the secondary-side coils, transformer cores and the primary-side coil, which are a load viewed from the inverter circuit. | 04-07-2016 |
20160099706 | RESISTANCE ELEMENT GENERATOR AND OUTPUT DRIVER USING THE SAME - A resistance element generator includes a reference current generation unit suitable for receiving a source reference current to generate first and second reference currents, a first resistance generation unit suitable for generating a first resistance value by using a first reference voltage and the first reference current, and outputting a first voltage corresponding to the formed first resistance value, and a second resistance generation unit suitable for generating a second resistance value by using a third reference voltage and the second reference current, and outputting a second voltage corresponding to the formed second resistance value. | 04-07-2016 |
20160099712 | APPARATUS COMPRISING A SWITCH FEATURE - Apparatus comprises a switch feature configured to restrict an electrical signal transmitted from a peripheral device, and received through an electrical contact, from being transferred to one of first and second circuit modules coupled to the electrical contact, depending on the voltage amplitude of the electrical signal. | 04-07-2016 |
20160104724 | SEMICONDUCTOR DEVICE - A semiconductor substrate of a first conductivity type having a first region of a second conductivity type formed in a surface thereof; an insulating film on the semiconductor substrate; a primary wiring line connected to the first region and configured to receive a voltage from outside; a plurality of diodes connected in series on the insulating film and having a spiral shape generally centering around the first region in a plan view, the diodes having one end of the series thereof connected to the primary wiring line and serving as a cathode; a resistor voltage divider having one end connected to another end of the series of diodes; a first connection wiring line connected to another end of the resistor voltage divider; and a second connection wiring line connected to a midpoint between the another end of the series of diodes and the another end of the resistor voltage divider. | 04-14-2016 |
20160105171 | SEMICONDUCTOR DEVICE HAVING THROUGH CHIP VIA - A semiconductor device includes a plurality of chips; a first through-chip via vertically passing through the chips, a power-saving unit suitable for being precharged to a precharge voltage during a precharge period; and a driving unit suitable for driving data using the precharge voltage outputted from the power-saving unit, during a driving period. | 04-14-2016 |
20160105172 | ACTIVE DIODE HAVING IMPROVED TRANSISTOR TURN-OFF CONTROL METHOD - An active diode that features improved control of transistor turn-off is provided. Such an active diode may include a comparator to compare voltages between opposite ends of a parasitic diode, and a gate driver to control a gate terminal of the transistor according to the comparison result of the comparator. Furthermore, the active diode may further include an off-timing controller to control the transistor to be turned off at a point in time when voltages of the opposite ends of the parasitic diode turn positive. Thus, the active diode may be turned off when required. | 04-14-2016 |
20160105173 | HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY - An electrical circuit arranged in a half bridge topology. The electrical circuit includes a high side transistor; a low side transistor; a gate driver and level shifter electrically coupled to a gate of the high side transistor; a gate driver electrically coupled to a gate of the low side transistor; a capacitor electrically coupled in parallel with the gate driver and level shifter; a voltage source electrically coupled to an input of the gate driver and level shifter and an input of the gate driver; and, a bootstrap transistor electrically coupled between the voltage source and the capacitor. A GaN field-effect transistor is synchronously switched with a low side device of the half bridge circuit. | 04-14-2016 |
20160105175 | POWER SEMICONDUCTOR DRIVE CIRCUIT, POWER SEMICONDUCTOR CIRCUIT, AND POWER MODULE CIRCUIT DEVICE - A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit. | 04-14-2016 |
20160111399 | SEMICONDUCTOR SYSTEM HAVING SEMICONDUCTOR APPARATUS AND METHOD OF DETERMINING DELAY AMOUNT USING THE SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes: a slave chip including a signal transfer unit configured to determine whether or not to transfer an input signal in response to a chip select signal; a master chip including a replica circuit unit having the same configuration as the signal transfer unit and a signal output unit configured to receive an output signal of the signal transfer unit and an output signal of the to replica circuit unit and generate an output signal in response to the control signal; a first through-chip via vertically formed through the slave chip, and having one end connected to the master chip to receive the input signal and the other end connected to the signal transfer unit; and a second through-chip via vertically formed is through the slave chip, and having one end connected to the signal transfer unit and the other end connected to the signal output unit. | 04-21-2016 |
20160112040 | DRIVE DEVICE - A drive device that drives a semiconductor switching device includes a capacitor, an output selection unit that selects whether or not to supply a charge of the capacitor to a conduction control terminal of the semiconductor switching device, and a charge consumption unit that supplies the charge of the capacitor to a portion other than the conduction control terminal, thereby consuming the charge of the capacitor. | 04-21-2016 |
20160112043 | ELECTRONIC CIRCUIT - Provided is an electronic circuit capable of preventing a switching device from breakage when a short-circuit occurs. When a gate control signal CG | 04-21-2016 |
20160118960 | SYSTEM AND METHOD FOR CALIBRATING CHIPS IN A 3D CHIP STACK ARCHITECTURE - A system and method is disclosed for adaptively adjusting a duty cycle of a signal between a first and second chip in a 3D architecture/stack for adaptively calibrating a chip in a 3D architecture/stack. In one embodiment, the system includes a first chip and a second chip located within the 3D chip stack, wherein the first chip generates a calibration signal, the second chip receives the calibration signal and compares it to a reference signal to generate a comparison signal that further compared to a reference duty signal to generate a reference duty comparison signal, that is then provided to the first chip to generate a drive signal that adjusts a duty cycle of the calibration signal. | 04-28-2016 |
20160118979 | DRIVE CIRCUIT FOR SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE - A primary circuit produces a first on-pulse and a first off-pulse synchronized with a rising edge and a falling edge of an input signal, respectively. A level shift circuit produces a second on-pulse and a second off-pulse formed by shifting the voltage level of the first on-pulse the first off-pulse, respectively. A secondary circuit outputs an output pulse rising and falling in synchronization with the second on-pulse and the second off-pulse, and holds the output when both of the pulses are high. When the reference potential rises, the pulse corresponding to the state of the input signal during the rise of the second potential in the first on-pulse and the first off-pulse is regenerated and one of the second on-pulse and the second off-pulse is thereby made high after the end of the rise of the second reference potential to retransmit the state of the input signal. | 04-28-2016 |
20160126382 | ENERGY CONVERSION DEVICE WITH MULTIPLE VOLTAGE OUTPUTS AND POWER TRANSISTOR MODULE USING THE SAME - An energy conversion device in electrical communication with at least one fin is provided to output multiple voltages. The at least one fin which is originating from inside the energy conversion device, which is formed from a metal contact disposed between energy conversion device components, and which is spaced with a first end contact and a second end contact. A power transistor module includes at least one transistor, a gate driver and the energy conversion device. The gate driver is configured to drive the at least one transistor. The energy conversion device is configured to supply isolated voltages to the gate driver. | 05-05-2016 |
20160126944 | P-CHANNEL MOSFET HIGH VOLTAGE DRIVER - In accordance with one or more aspects of the disclosed embodiments, a drive circuit having a source of modulation for producing a modulated signal, a level shifter configured to receive the modulated signal and produce a level-shifted driver signal, an inverter circuit configured to receive the level-shifted driver signal and produce a MOSFET control signal, and at least one p-channel metal oxide semiconductor field effect transistor (MOSFET) configured to receive the MOSFET control signal and modulate an application of high current to a load, where the MOSFET control signal is supplied directly to the p-channel MOSFET through the inverter circuit. | 05-05-2016 |
20160126946 | CONTROL OF A HALF-BRIDGE - A control for an electrical consumer includes a first switching device for connecting an output for the consumer to a first potential, a second switching device for connecting the output to a second potential, a control device for activating the switching devices, a first scanning device for providing a first signal as a function of a switching state of the first switching device, a second scanning device for providing a second signal as a function of a switching state of the second switching device, and a comparator device for determining a difference in the switch-on times of the switching devices on the basis of the determined signals. | 05-05-2016 |
20160126947 | GOA CIRCUIT BASED ON LTPS SEMICONDUCTOR TFT - The present invention provides a GOA circuit based on LTPS semiconductor TFT, comprising a plurality of GOA units which are cascade connected, and N is set to be a positive integer and an Nth GOA unit comprises a pull-up control part ( | 05-05-2016 |
20160126948 | GOA CIRCUIT BASED ON LTPS SEMICONDUCTOR TFT - The present invention provides a GOA circuit based on LTPS semiconductor TFT, comprising a plurality of GOA units which are cascade connected, and N is set to be a positive integer and an Nth GOA unit comprises a pull-up control part ( | 05-05-2016 |
20160126949 | ADJUSTABLE INTERNAL GATE RESISTOR - The disclosure describes a method for controlling a voltage that is applied to a voltage controlled circuit element. In one example, the method includes controlling, by a semiconductor light source, a resistance value of a photoresistor coupled to a voltage controlled circuit element. The method includes applying, by a gate driver and via the photoresistor, a voltage to the voltage controlled circuit element. The method further includes controlling the voltage applied to the voltage controlled circuit element in order to control a current through the voltage controlled circuit element. In some examples, controlling the voltage applied to the voltage controlled circuit element may be accomplished by controlling the resistance value of the photoresistor in order to control a voltage drop across the photoresistor. Circuits that implement the method are also described. | 05-05-2016 |
20160134271 | BUFFER CIRCUIT - It is an object of the present invention to provide a buffer circuit that reduces a reverse voltage applied to transistors being a complementary pair during turn-on and turn-off. A buffer circuit is a buffer circuit that turns on and turns off a switching element and includes a drive-side element that has an end connected to a base of a drive transistor and a sink-side element that has an end connected to a base of a sink transistor. The drive-side element and the sink-side element are respectively a drive-side diode and a sink-side diode, or a drive-side capacitor and a sink-side capacitor. | 05-12-2016 |
20160134272 | Switch Driver With a Low-Cost Cross-Conduction-Preventing Circuit - A driver for a power transistor switch comprising a FET complementary output stage which is driven by another FET complementary pre-driver stage which is further driven by an input-buffer and level-shifter stage. The pre-driver stage includes a current-limiting and cross-delaying circuit which is inserted in between drains terminals of a complementary FET pair. The current-limiting and cross-delaying circuit limits shoot-current at the pre-driver stage; and in conjunction with the FET pair and the input-buffer and level-shifter stage, it is adapted to delay turning on one complementary output FET until after the other complementary output FET is turned off, thereby preventing cross conduction at the output stage. | 05-12-2016 |
20160134277 | DRIVE CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT - A drive circuit for a power semiconductor element includes: a voltage-command generation unit that generates a voltage command VGEref, which is a charge command between the gate and emitter terminals of a power semiconductor element; and a subtracter that calculates a deviation voltage Verr between the voltage command VGEref and the voltage between the gate and emitter terminals. The drive circuit also includes: a gate current controller that is input with the deviation voltage Verr and calculates a gate-current command voltage VIGref for determining the gate current that is caused to flow to the gate terminal of the power semiconductor element; a gate-current command limiter that limits the gate-current command voltage VIGref; and a gate-current supply device that is input with an actual gate-current command voltage VIGout and that supplies a gate current to the gate terminal of the power semiconductor element. | 05-12-2016 |
20160134279 | METHOD AND CIRCUIT FOR RECHARGING A BOOTSTRAP CAPACITOR USING A TRANSFER CAPACITOR - A circuit including and a method utilizing an improved bootstrap topology provide power to a high side (HS) driver for high efficiency applications. The improved bootstrap topology includes a transfer capacitor to store charge and to recharge a bootstrap capacitor, which provides power to the HS driver. The improved bootstrap topology also includes a resistor connected to the transfer capacitor to charge the transfer capacitor from a voltage source and to isolate the transfer capacitor from high voltage pulses. | 05-12-2016 |
20160142048 | SYSTEM AND METHOD FOR DRIVING A POWER SWITCH - A gate driver circuit for the power switch is disclosed. The gate driver circuit includes a resistor network coupled to the power switch. The resistor network includes a plurality of resistors. The gate driver circuit further includes a control unit operatively coupled to the resistor network. The control unit is configured to control the resistor network such that the resistor network provides different resistance values in at least two of a delay phase, a commutation phase, and a saturation phase when the power switch is transitioned to a first state. A method for driving the power switch is also disclosed. | 05-19-2016 |
20160142049 | POWER SUPPLY CIRCUITS FOR GATE DRIVERS - An embodiment of a power supply circuit to generate a supply voltage for a gate driver circuit can include an isolated power supply circuit to receive a first voltage in a first isolated system and provide power to a cyclic charging power supply circuit, the cyclic charging power supply circuit providing a supply voltage to the gate driver circuit in a second isolated system, the isolated power supply circuit providing the power to the cyclic charging power supply circuit while the gate driver circuit drives a transistor in an on state. The isolated power supply circuit can include a control circuit to regulate the power provided to maintain or increase the supply voltage while the gate driver circuit drives the transistor in an on state. The power supply circuit can also include the cyclic charging power supply circuit to receive a second voltage in the second isolated system and provide the supply voltage to the gate driver circuit. The cyclic charging power supply circuit can include one or more of a bootstrap power supply circuit or a charge pump power supply circuit. | 05-19-2016 |
20160149561 | SUPER HIGH VOLTAGE DEVICE AND METHOD FOR OPERATING A SUPER HIGH VOLTAGE DEVICE - A super high voltage device includes a first gate, a second gate, a drain, a first source, a second source, and a third source. The first gate is used for receiving a first control signal generated from a pulse width modulation controller. The second gate is used for receiving a second control signal generated from the pulse width modulation controller. The drain is used for receiving an input voltage. First current flowing from the drain to the first source varies with the first control signal and the input voltage. The second control signal is used for controlling turning-on and turning-off of second current flowing from the drain to the second source and third current flowing from the drain to the third source. The third source is proportional to the second current. | 05-26-2016 |
20160149569 | A GATE DRIVE CIRCUIT AND A METHOD FOR SETTING UP A GATE DRIVE CIRCUIT - A gate drive circuit includes a first switch and a first capacitor. A first terminal of the first capacitor is electrically coupled to the first switch. The first switch is electrically coupled between the first terminal and a voltage supply of the power transistor. A second terminal of the first capacitor is electrically coupled to the reference potential. The gate drive circuit further includes a first voltage limiter in parallel with the first capacitor. The first voltage limiter limits a voltage across the first capacitor to a first predetermined voltage. The gate drive circuit further includes a second capacitor, a pre-charging circuit arranged between the first terminal of the first capacitor and a first terminal of the second capacitor. The gate drive circuit further includes a third capacitor with a first terminal electrically coupled to a second terminal of the second capacitor and a second terminal electrically coupled to a gate terminal of the power transistor. | 05-26-2016 |
20160161532 | VOLTAGE DETECTION CIRCUIT - To provide a voltage detection circuit which avoids unintentional on/off-control of an output transistor immediately after starting a power supply. A voltage detection circuit is configured to be equipped with a comparator which compares a detected voltage and a reference voltage, and an inverter which drives an output transistor, based on an output of the comparator and to supply the operating current of the inverter by a current source. | 06-09-2016 |
20160164398 | SEMICONDUCTOR DEVICE - A method of controlling a power supply to a semiconductor device including a first region having a high-side drive circuit, a second region having a signal processing circuit, a low-side drive circuit and a voltage control circuit, and a separation region formed between the first and second regions and having a rectifying element, includes turning on a first control signal to the voltage control circuit, turning off the first control signal to the voltage control circuit, and repeating the turning on of the first control signal and the turning off the first control signal. | 06-09-2016 |
20160164512 | CONFIGURATION OF JFET FOR BASE DRIVE BIPOLAR JUNCTION TRANSISTOR WITH AUTOMATIC COMPENSATION OF BETA VARIATION - A circuit for automatically compensating beta variation by driving base of BJT with JFET is disclosed. The circuit includes a first well, a second well, a third well, one or more leakage current devices, and a varying metal connection. The first well includes first JFET J | 06-09-2016 |
20160164514 | SCAN DRIVING CIRCUIT - A scan driving circuit is disclosed, and the scan driving circuit has a pull-up control module, a pull-up module, a pull-down module, a pull-down maintaining module, a bootstrap capacitor and a constant low-level voltage source; the pull-up control module is connected to the pull-up module, the pull-down module, the pull-down maintaining module and the bootstrap capacitor respectively, and the constant low-level voltage source is connected to the pull-down maintaining module and the pull-down module respectively. The electrical leakage phenomenon can be efficiently avoided, and the reliability of the scan driving circuit is thus improved. | 06-09-2016 |
20160164524 | LOW COST CMOS CHIP WITH TAPE AUTOMATED BONDING (POLYAMIDE) - In view of the foregoing, an embodiment herein provides a low cost system. The system includes a bipolar array, a CMOS chip. The bipolar array includes one or more bipolar integrated circuits. The CMOS chip is programmed by a single level of metal. The bipolar array and the CMOS chip is mounted on a substrate using TAB polyamide. The TAB includes a polyamide film with one or more metal patterns chemically etched by programming three metal layers simultaneously to obtain one or more components. The one or more components are mounted in a package, and a small system can be realized. An external capacitor supplies an ac power source to the bipolar array. The bipolar array produces a rectified voltage and a lower voltage power for the enhanced gate array. An output of the enhanced gate array drives bipolar drivers of DC motor, stepper motor, BLDC motor, and LED assemblies. | 06-09-2016 |
20160172960 | SWITCHING DEVICE | 06-16-2016 |
20160172961 | SOURCE DRIVER CIRCUIT AND CONTROL METHOD THEREOF | 06-16-2016 |
20160173065 | HALF-POWER BUFFER AND/OR AMPLIFIER | 06-16-2016 |
20160173066 | DUAL LOOP VOLTAGE REGULATOR BASED ON INVERTER AMPLIFIER AND VOLTAGE REGULATING METHOD THEREOF | 06-16-2016 |
20160173068 | GATE DRIVER AND METHOD OF DRIVING THE SAME | 06-16-2016 |
20160173085 | I/O DRIVING CIRCUIT AND CONTROL SIGNAL GENERATING CIRCUIT | 06-16-2016 |
20160173094 | GATE DRIVER CIRCUIT AND GATE DRIVING METHOD FOR PREVENTION OF ARM SHORT | 06-16-2016 |
20160179125 | SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME | 06-23-2016 |
20160189652 | SCAN DRIVING CIRCUIT - A scan driving circuit is provided. The scan driving circuit includes a pull-up control module, a pull-up module, a pull-down module, a pull-down maintenance module, a bootstrap capacitor, and a low-level constant source. The pull-up control module herein is respectively coupled to the pull-up module, the pull-down module, the pull-down maintenance module, and the bootstrap capacitor; the low-level constant source is respectively coupled to the pull-down maintenance module and the pull-down module. The present invention can avoid a leakage phenomenon well and improve reliability of the scan driving circuit. | 06-30-2016 |
20160191021 | METHODS AND SYSTEMS FOR OPERATING HYBRID POWER DEVICES USING DRIVER CIRCUITS THAT PERFORM INDIRECT INSTANTANEOUS LOAD CURRENT SENSING - An integrated circuit is provided with an MCU, which is configured to generate a PWM control signal that is free of switching pattern information therein. A current-estimating gate driver is provided, which is responsive to the PWM signal. This gate driver is configured to drive first and second gate terminals of first and second parallel switching devices (within a hybrid switch) with gate signals that establish a second switching pattern within the hybrid switch. These gate driving operations are performed in response to measuring a first voltage associated with a terminal of the hybrid switch when being driven by gate signals that establish a first switching pattern within the hybrid switch that is different from the second switching pattern. The duty cycles of the gate signals associated with the second switching pattern are unequal and the duty cycles of the gate signals associated with the first switching pattern are unequal. | 06-30-2016 |
20160191038 | TRANSISTOR DEVICE, RELATED METHOD, AND RELATED ELECTRONIC DEVICE - A transistor device may include an n-type transistor. The transistor device may further include a first bias voltage unit, which is electrically connected to the n-type transistor and configured to apply a first positive bias voltage to a drain terminal of the n-type transistor when the n-type transistor is in an off state. The transistor device may further include a second bias voltage unit electrically, which is connected to the n-type transistor and configured to apply a second positive bias voltage to a source terminal of the n-type transistor when the n-type transistor is in the off state. | 06-30-2016 |
20160191044 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM INCLUDING THE SAME, AND CONTROL METHOD OF SEMICONDUCTOR DEVICE - According to an embodiment, a module M | 06-30-2016 |
20160191047 | SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF - A semiconductor device for driving a semiconductor switch, including a first transistor configured to extract gate charges of the semiconductor switch with a first extraction force, a comparator configured to compare gate voltage of the semiconductor switch with a threshold voltage to thereby output a first decision signal, an AND circuit configured to perform an AND operation on a gate voltage of the first transistor and the first decision signal to thereby output a second decision signal, a delay circuit configured to delay the second decision signal by a predetermined time and to output the delayed signal as a second control signal, and a second transistor configured to be turned-on, in response to the second control signal, the predetermined time after the first transistor is turned-on, to thereby extract the gate charges of the semiconductor switch with a second extraction force larger than the first extraction force. | 06-30-2016 |
20160191049 | POWER SUPPLY DEVICE - A power supply device is provided. The power supply device includes a power transistor, a detection circuit and a driving circuit. The power transistor is controlled by the driving circuit to generate an output current. A first end of the power transistor is coupled to a power voltage pin through a first bonding wire. A second end of the power transistor is configured to output the output current. The detection circuit is coupled between two ends of the first bonding wire to detect the output current and generate a control signal. The driving circuit generates a driving signal according to the control signal. When the output current value is larger than or equal to an over-current-protection current value, the driving circuit starts to adjust a voltage value of the driving signal, such that the output current value is kept at the over-current-protection current value. | 06-30-2016 |
20160191052 | SEMICONDUCTOR DEVICE - To provide a semiconductor device in which external correction can be performed, the area occupied by a read circuit is reduced, and power consumption is reduced. One embodiment of the semiconductor device includes a pixel and a read circuit. The pixel includes a transistor and a display element. The read circuit includes a function selection portion and an operational amplifier. The transistor is electrically connected to the function selection portion through a wiring. The operational amplifier is electrically connected to the function selection portion. The function selection portion includes at least one switch. The function selection portion can select a function of the read circuit by controlling the switch. | 06-30-2016 |
20160191053 | ISOLATED UNI-POLAR TRANSISTOR GATE DRIVE - According to one aspect, a transistor gate drive comprises a first input configured to be coupled to a DC voltage source, a second input configured to receive a control signal, a third input configured to couple to a ground connection, a transformer, a first switch configured to couple the first input to a first end of a primary winding of the transformer in response to receipt of the control signal, and to decouple the first input from the first end of the primary winding in response to the receipt of the control signal, a second switch configured to couple a second end of the primary winding to the third input in response to receipt of the control signal, and to decouple the second end of the primary winding from the third input in response to the receipt of the control signal. | 06-30-2016 |
20160191057 | MULTI-SUPPLY OUTPUT CIRCUIT - Disclosed examples include ICs and general-purpose I/O circuitry to facilitate interfacing of the IC with a variety of external circuits operating at different supply voltages, in which an integer number N supply drive circuits are individually coupled with a corresponding supply voltage node and selectively connect the corresponding supply voltage node to a general-purpose output node based on a supply drive control signal to allow programmable interfacing of individual general-purpose output pads or pins of the IC with an external circuit at the appropriate signal level. | 06-30-2016 |
20160197604 | SEMICONDUCTOR SWITCH CIRCUIT | 07-07-2016 |
20160197606 | SEMICONDUCTOR DEVICES AND SEMICONDUCTOR SYSTEMS INCLUDING THE SAME | 07-07-2016 |
20160197614 | SEMICONDUCTOR DEVICE AND HIGH SIDE CIRCUIT DRIVE METHOD | 07-07-2016 |
20160204252 | SEMICONDUCTOR DEVICE | 07-14-2016 |
20160254810 | Electronic Drive Circuit | 09-01-2016 |
20160255685 | SWITCH-MODE DRIVE SENSING OF REVERSE RECOVERY IN BIPOLAR JUNCTION TRANSISTOR (BJT)-BASED POWER CONVERTERS | 09-01-2016 |
20160379928 | FINFET POWER SUPPLY DECOUPLING - Embodiments herein describe dummy gates disposed over a portion of a fin in finFETs. That is, instead of separating the dummy gates from the finFET structure, the fins may be extended and covered, at least partially, by the dummy gates. An insulative material is disposed between the dummy gate and the fin in order to form a decoupling capacitor. In one embodiment, the dummy gate overlaps a portion of the fin that is held at a voltage rail. Moreover, the dummy gate may be coupled to a different (e.g., opposite) voltage rail than rail coupled to the fin. For example, if the fin is coupled to V | 12-29-2016 |
20160380625 | POWER ELECTRONIC DEVICE ASSEMBLY FOR PREVENTING PARASITIC SWITCHING-ON OF FEEDER CIRCUIT-BREAKER - Disclosed herein is a power electronic device assembly for preventing parasitic switching-on of a feeder circuit breaker. The assembly includes a logic circuit, a power switch with an input and a reference leg, and a driver circuit which drives the power switch. The driver circuit includes a drive unit and a short circuit having a safety function. When the input of the power switch is not operated, the power switch is short-circuited by the reference leg so that the potential of the input decreases below a switching-on threshold. An additional wire connection device is disposed between the driver circuit and the power switch and configured such that when no or excessively small amount of supply voltage is applied, the input of the power switch is short-circuited or is coupled to a safety potential at which discharge is secured, whereby discharge of parasitic charge current is secured. | 12-29-2016 |
20170237343 | LOOP COMPENSATION CIRCUIT AND SWITCHING POWER SUPPLY CIRCUIT | 08-17-2017 |
20170237344 | THREE-D POWER CONVERTER IN THREE DISTINCT STRATA | 08-17-2017 |
20180026531 | TUNABLE VOLTAGE REGULATOR CIRCUIT | 01-25-2018 |
20180026626 | ADAPTIVE GATE DRIVER | 01-25-2018 |
20180026629 | OUTPUT DRIVER HAVING PULL-DOWN CAPABILITY | 01-25-2018 |
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20190149142 | RADIO FREQUENCY SWITCHING CIRCUITRY WITH REDUCED SWITCHING TIME | 05-16-2019 |
20190149146 | Active load generation circuit and filter using same | 05-16-2019 |
20190149149 | Multi-Voltage Input Output Device | 05-16-2019 |
20190149150 | RING AMPLITUDE MEASUREMENT AND MITIGATION | 05-16-2019 |