Entries |
Document | Title | Date |
20080204011 | Magnetic sensor, magnetic direction sensor, method of detecting magnetic field and method of detecting magnetic direction - A magnetic direction sensor can detect at higher precision the magnitude and direction of a detected magnetic field. The magnetic direction sensor has a measuring section, a storage section and an operating section. The measuring section has first and second MR elements, and detects resistance values of these elements in accordance with an attitude change of the sensor and the presence or absence of a bias magnetic field to be applied through a coil in a direction orthogonal to a magnetization direction of each pinned layer in the first and second MR elements. The storage section stores fixed data invariable in response to a detected magnetic field direction, in resistance values of these elements measured by the measuring section. The operating section calculates a detected magnetic field vector from variable data of resistance values of these elements measured by the measuring section, and fixed data stored in the storage section. | 08-28-2008 |
20080211494 | Device Comprising Magneto Resistive System | 09-04-2008 |
20080218163 | MAGNETORESISTIVE SENSOR DEVICE - According to the present invention, a magnetoresistive sensor device, which can be manufactured at a high yield and a low cost, is excellent in magnetoresistance characteristics and is reliable can be provided. The magnetoresistive sensor device comprises a substrate, a signal processing circuit formed on the substrate, a flattening film for flattening the signal processing circuit, a silicon nitride film formed on the flattened signal processing circuit, and magnetoresistive sensor elements formed on the silicone nitride film, in which the flattening film is preferably a spin-on-glass (SOG) film. | 09-11-2008 |
20080224695 | Method of Measuring a Weak Magnetic Field and Magnetic Field Sensor of Improved Sensitivity - A magnetic field sensor comprises a magnetoresistive element ( | 09-18-2008 |
20080238420 | MAGNETIC SENSOR - The magnetic sensor comprises a spin-valve GMR including a free layer having an elongated form as seen in a laminating direction and a permanent magnet layer having an elongated form as seen in the laminating direction. The permanent magnet layer is arranged in parallel with the free layer. | 10-02-2008 |
20080258721 | MTJ sensor including domain stable free layer - By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields. | 10-23-2008 |
20080284424 | SPIN DETECTION DEVICE AND METHODS FOR USE THEREOF - Embodiments of the invention are related to methods for and devices for performing electrical spin detection. A method for spin detection of charged carriers having a spin and forming a flux in a medium is disclosed, the method comprises measuring a first current on a first contact on the medium that has a first spin selectivity, measuring a second current on a second contact on the medium that has a second spin selectivity, comparing the first measured current and the second measured current, and deriving the average or statistically relevant spin state of the flux of charge carriers. Corresponding devices are disclosed. | 11-20-2008 |
20080309331 | GIANT MAGNETORESISTIVE RESISTOR AND SENSOR APPARATUS AND METHOD - A giant magnetoresistive sensor apparatus is described that provides improved multilayer quality, hysteresis, linearity and sensitivity. The multilayer structure includes NiFeCr as buffer and cap layers. The sensing resistor is designed in the form of a serpentine structure. To minimize the hysteresis and improve the linearity, the resistor end is tapered and elongated. In forming the sensor in a Wheatstone bridge configuration, two resistors are shielded by thick NiFe layers, while the two sensing resistors are not shielded and open to external signal fields. The shields can not only shield the influence of the external field on the shielded resistors but also serve as magnetic flux concentrators to magnify the external field on the unshielded resistors. The bridge output reflects the resistance change of the two unshielded sensing resistors. | 12-18-2008 |
20090001980 | RADIO FREQUENCY SENSOR SYSTEMS, ELECTROMAGNETIC SENSOR ARRAYS, AND METHODS OF MANUFACTURE - An embodiment includes a radio frequency (RF) sensor system having a plurality of magnetoresistive (MR) sensors, where each MR sensor includes a configuration of MR elements and is adapted to produce a time-varying output voltage in response to a time-varying, external magnetic field. The RF sensor system also includes combiner circuitry, electrically coupled to the plurality of MR sensors, and adapted to receive and combine a plurality of time-varying output voltages from the plurality of MR sensors to generate a sensor output voltage. Another embodiment includes an electromagnetic sensor array having a plurality of MR sensors arranged in an array configuration, where each MR sensor includes a plurality of MR elements forming a Wheatstone bridge circuit, and where each MR sensor is adapted to produce a time-varying output voltage in response to a time-varying, external magnetic field. Still another embodiment includes a method for manufacturing an electromagnetic sensor array. | 01-01-2009 |
20090001981 | MAGNETIC FIELD SENSOR CIRCUIT WITH COMMON-MODE VOLTAGE NULLING - A magnetic field sensor circuit with common-mode voltage nulling, reduces or eliminates the effect of common-mode variation and transients due to rotation of the magnetic field sensor terminals between the bias current source and sensor output voltage terminals. A switching circuit rotates the bias current source and sensor output voltage terminals between pairs of terminals of the semiconductor magnetic field sensor. After each rotation, the switching circuit momentarily shorts all of the terminals of the semiconductor magnetic field sensor to a reference voltage such as ground. After a predetermined period of time, a sample/hold circuit having an input coupled to the sensor output terminals samples and holds the voltage at the sensor output voltage terminals, resulting in a sampled output free of common mode error between samples due to common-mode error and magnitude changes between magnetic field sensor terminal pairs. | 01-01-2009 |
20090001982 | Method and Apparatus for Defined Magnetizing of Permanently Magnetizable Elements and Magnetoresistive Sensor Structures - A method of magnetizing a permanently magnetizable element associated with a magnetic field sensor structure includes generating a test magnetic field penetrating the magnetic field sensor structure and the permanently magnetizable element, detecting the magnetic field and providing a test signal based on a magnetic field through the magnetic field sensor structure, aligning the test magnetic field and the magnetic field sensor structure with the permanently magnetizable element to each other, until the test signal reaches a set value corresponding to a predetermined magnetized field distribution with respect to the magnetic field sensor structure, and generating a magnetizing field for permanently magnetizing the element to be permanently magnetized, wherein the magnetizing field corresponds to the predetermined magnetic field distribution within a tolerance range. | 01-01-2009 |
20090015252 | Magnetoresistive Magnetic Field Sensor Structure - A magnetic field sensor structure including a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction and a second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction, wherein the first and second magnetoresistive elements are arranged in a layer vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different. | 01-15-2009 |
20090039879 | LOW NOISE MAGNETIC FIELD SENSOR USING A LATERAL SPIN TRANSFER - The present invention relates to a magnetoresistive sensor comprising a first pinned-magnetization magnetic layer ( | 02-12-2009 |
20090039880 | Electric current detector having detector element holder coupled to magnetic core casing - An electric current detector according to the present invention detects an amount of current flowing through a conductor inserted into a through-hole of the current detector. The current detector includes a magnetic core casing in which a ring-shaped magnetic core having an air gap is molded and a detector element holder made by resin on which a detector element such as a Hall element is mounted. The detector element holder is coupled to the magnetic core casing so that the detector element is correctly positioned in the air gap of the ring-shaped magnetic core. Since the detector element is exposed to the air gap without being molded by resin, the detection accuracy is not affected by temperature changes in the course of usage. The detector element holder is simply coupled to the magnetic core casing without using complex connecting members. Accordingly, the electric current detector is manufactured at a low cost. | 02-12-2009 |
20090045809 | Magnetic sensor and manufacturing method of the same - To provide a magnetic sensor that can be reduced in size and cost. Provided is a magnetic sensor which comprises: a magnetic field detection chip having a magnetic field detection element for detecting a magnetic field and an output terminal for outputting an output signal from the magnetic field detection element; and a substrate that has the magnetic field detection chip mounted thereon, and has a connection terminal for being connected to the output terminal of the magnetic field detection chip that is formed on a mount face of the substrate. An output-terminal formed face of the magnetic field detection chip is arranged not to be in parallel to the mount face of the substrate. More specifically, the output-terminal formed face of the magnetic field detection chip is arranged almost vertical to the mount face of the substrate. | 02-19-2009 |
20090045810 | MAGNETIC DETECTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A magnetic detecting device includes a first and a second magnetoresistive element, and a first and a second fixed resistor connected in series to the first and the second magnetoresistive element, respectively. The first and the second magnetoresistive element each include a pinned magnetic layer and a free magnetic layer with a nonmagnetic conductive layer in between. The first and the second magnetoresistive element have the same layer structure except that the nonmagnetic conductive layers have different thicknesses. The thicknesses of the nonmagnetic conductive layers are set so that a positive interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the first magnetoresistive element and a negative interlayer coupling magnetic field acts between the free magnetic layer and the pinned magnetic layer of the second magnetoresistive element. The first and the second fixed resistor have the same layer structure. | 02-19-2009 |
20090058412 | Integrated Current Sensor - An integrated current sensor includes a current conductor, a magnetic field transducer, and an electromagnetic shield. The magnetic field transducer includes a sensor die. The electromagnetic shield is disposed proximate to the sensor die. The electromagnetic shield has at least one feature selected to reduce an eddy current in the electromagnetic shield | 03-05-2009 |
20090058413 | MAGNETORESISTIVE SENSOR DEVICE AND METHOD OF FABRICATING SUCH MAGNETORESISTIVE SENSOR DEVICE - In order to further develop a magnetoresistive sensor device ( | 03-05-2009 |
20090079425 | Magnetic Sensitivity Measurement System - A system and method for determining the magnetic sensitivity of a Hall-effect switch through the use of a variable powered DC electromagnet having a permanent magnet attached to it. In use the electromagnet is placed in contact with a Hall-effect switch component and the DC voltage varied until a detector determines the Hall-effect switch has been triggered. The electromagnet is then moved to be in contact with a probe connected to a Gauss meter to determine the magnetic sensitivity of the Hall-effect switch. | 03-26-2009 |
20090108841 | TWO-AXIS MAGNETIC FIELD SENSOR - Disclosed is a small-sized two-axis magnetic field sensor having a function to cause a magnetic field canceling an external offset magnetic field. The two-axis magnetic field sensor contains a plane coil disposed on a plane and four sets of magneto-resistance element pairs on a plane parallel to the plane coil. The plane coil includes at least two pairs of parallel conductors, and two magneto-resistance elements cross only a single conductor of the coil. A current for canceling the external offset magnetic field is determined in advance, and while a DC current that causes total magnetic fields of biasing magnetic fields plus a magnetic field for canceling the external offset magnetic field flows through the coil, intermediate potential outputs from the magneto-resistance element pairs are detected to measure a magnetic field direction, such as geo-magnetism. | 04-30-2009 |
20090115412 | Magnetic sensing device and electronic compass using the same - [Object] To provide a magnetic sensing device that can obtain the strength of an external magnetic field under circumstances where a relatively strong disturbance takes place, and an electronic compass using the same. | 05-07-2009 |
20090121710 | Novel free layer design for TMR/CPP device - A TMR sensor and a CPP GMR sensor all include a free layer that is of the form CoFe | 05-14-2009 |
20090140733 | MAGNETIC DEVICE AND FREQUENCY DETECTOR - A magnetic device includes: a magnetoresistive effect element having a magnetization fixed layer, a magnetization free layer, and a nonmagnetic layer sandwiched between the magnetization fixed layer and the magnetization free layer; an input terminal for feeding an AC signal to the magnetoresistive effect element in its stacking direction; and an output terminal for extracting an output voltage from the magnetoresistive effect element, wherein the nomagnetic layer includes an insulating layer portion comprising an insulating material, and a current-constricting layer portion comprising a conductive material which passes through the insulating layer portion in its film thickness direction. | 06-04-2009 |
20090146656 | ELONGATED MAGNETIC SENSOR - A magnetoresistive device disposed in an elongated magnetic sensor, for example, has two parallel arrays of magnetosensitive elements arranged at regular intervals in the longitudinal direction. The magnetosensitive elements are connected in series through connection conductors, in a meandering pattern. The magnetoresistive device is disposed between two other magnetoresistive devices. The magnetoresistive devices are arranged such that the intervals between the magnetosensitive elements disposed at the ends of a magnetoresistive in the longitudinal direction and the opposed magnetosensitive elements of the magnetoresistive devices, respectively, are equal to the intervals between the magnetoresistive elements within the magnetoresistive devices. | 06-11-2009 |
20090167301 | INTEGRATED CIRCUIT INCLUDING A MAGNETIC FIELD SENSITIVE ELEMENT AND A COIL - An integrated circuit includes a die and a first magnetic field sensitive element formed on the die. The integrated circuit includes a first coil formed on the die and around the first magnetic field sensitive element. | 07-02-2009 |
20090201018 | MTJ sensor based method to measure an electric current - By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields. | 08-13-2009 |
20090206832 | MAGNETIC SENSOR DEVICE - The present invention provides a magnetic sensor device comprising means ( | 08-20-2009 |
20090206833 | MAGNETIC SENSOR AND MAGNETIC FIELD STRENGTH MEASUREMENT METHOD - The magnetic sensor according to the present invention includes: a magneto-resistive effect element which has a stacked body in which a magnetization-free layer, a nonmagnetic layer, and a magnetization fixed layer are stacked in this order, and the longitudinal direction of which is a direction perpendicular to the stacking direction; and a current path layer which is provided on the magneto-resistive effect element via an insulation layer so as to be spaced apart from the magneto-resistive effect element in the stacking direction, and which generates a magnetic field by being supplied with a current. The current path layer extends in a direction which forms an angle between 0 and 45 degrees to the longitudinal direction of the magneto-resistive effect element when viewed from the stacking direction. | 08-20-2009 |
20090212771 | HYSTERESIS OFFSET CANCELLATION FOR MAGNETIC SENSORS - Presented is a sensor that includes a magnetoresistive (MR) sensing device to sense a magnetic field and to produce an AC signal voltage proportional to the sensed magnetic field. The sensor also includes circuitry, coupled to the MR sensing device, to remove DC offset from the AC signal voltage. The DC offset may be related to the hysteresis characteristics of the MR sensing device. To remove DC offset, the circuitry may obtain an averaged DC offset and subtract the averaged DC offset from the AC signal voltage to produce a sensor output signal. | 08-27-2009 |
20090230954 | FERROMAGNETIC SEMICONDUCTOR, METHOD FOR THE PRODUCTION THEREOF, COMPONENTS INCORPORATING THE SAME, AND CORRESPONDING USES OF SAID SEMICONDUCTOR - The inventive ferromagnetic semiconductor comprises at least one magnetic element selected from the group consisting of Mn, Fe, Co, Ni and Cr, and has a Curie temperature which is equal to or higher than 350 K, and advantageously 400 K or higher. The semiconductor has a matrix which is depleted in magnetic element(s) and contains a discontinuous phase which is formed from columns, enriched with magnetic elements, and is ferromagnetic up to said Curie temperature, in such a way as to generate a lateral modulation of the composition of the semiconductor in the plane of the thin layer. Also disclosed is a method for the production of the semiconductor, a diode-type electronic component for the injection or collection of spins into or from another semiconductor respectively, or an electronic component which is sensitive to a magnetic field, and uses of the semiconductor relating to such a component. | 09-17-2009 |
20090237075 | MAGNETIC SENSOR DEVICE AND METHOD - A magnetoresistance sensor has a first magnetic layer that changes polarity in response to an external magnetic field and a second magnetic layer having a fixed magnetic polarity oriented in a reference direction. A varying voltage is applied to establish a varying magnetic bias field in the reference direction. An evaluation circuit calculates the difference between maximum and minimum resistance values established in response to the external magnetic field. | 09-24-2009 |
20090243608 | MAGNETIC FIELD MEASUREMENT METHOD AND MAGNETIC SENSOR - The magnetic field measurement method has: a step of preparing a magnetic sensor which includes: a magneto-resistive effect element having a magnetization-free layer and a magnetization fixed layer, and having a longitudinal direction; and magnetic field application means, wherein the magnetization direction of the magnetization fixed layer is fixed in a direction which forms an angle equal to or less than 45 degrees to the longitudinal direction, and a magnetic field generated by the magnetic field application means forms an angle equal to or less than 45 degrees to the longitudinal direction; a step of saturating the magnetization of the magnetization-free layer by the magnetic field application means and magnetizing the magnetization-free layer in one direction in the longitudinal direction; and a step of measuring the strength of an external magnetic field by applying the external magnetic field to the magnetization-free layer in the other direction in the longitudinal direction. | 10-01-2009 |
20090251139 | MAGNETIC FIELD-SENSITIVE COMPONENT COMPRISING A DILUTED MAGNETIC SEMICONDUCTOR, DEVICES INCORPORATING SAME AND USE METHOD - The invention concerns a magnetic field-sensitive component, a magnetic field sensing device and a memory structure each incorporating said component, and a method for detecting a magnetic field using said component. A component according to the invention comprises: at least one diluted magnetic semiconductor, first means for generating an electric current in said semiconductor along one predetermined direction, and second means for producing a signal representing a Hall voltage transverse to said direction, and it is so designed that the semiconductor is selected from the group consisting of II/VI and IV/IV type semiconductors and comprises a zone sensitive to said field which forms all or part of a magnetic quantum well, wherein are confined current carriers incorporated by doping in the semiconductor and inducing in said well ferromagnetic exchange interactions. | 10-08-2009 |
20090278534 | MAGNETIC SENSOR DEVICE FOR AND A METHOD OF SENSING MAGNETIC PARTICLES - A magnetic sensor device ( | 11-12-2009 |
20090284256 | SENSOR - The invention relates to a magnetoresistive sensor with a triangle made of magnetic sensitive material with three corners with two wiring connections, wherein the three sides of the triangle have different or at least substantially equal length. | 11-19-2009 |
20090289626 | TUNNEL JUNCTION RESISTOR FOR HIGH RESISTANCE DEVICES AND SYSTEMS USING THE SAME - A device in one embodiment includes a plurality of tunnel junction resistors coupled in series; a first lead coupled to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupled to another end of the plurality of tunnel junction resistors coupled in series. A device in another embodiment includes a magnetoresistive sensor; a plurality of tunnel junction resistors coupled in series; a first lead coupling one end of the magnetoresistive sensor to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupling another end of the magnetoresistive sensor to another end of the plurality of tunnel junction resistors coupled in series. A system in yet another embodiment includes a semiconductor device; a plurality of tunnel junction resistors coupled in series; a first lead coupling one end of the semiconductor device to one end of the plurality of tunnel junction resistors coupled in series; and a second lead coupling another end of the semiconductor device to another end of the plurality of tunnel junction resistors coupled in series. | 11-26-2009 |
20090295381 | MAGNETIC SENSOR INTEGRATED CIRCUIT DEVICE AND METHOD - An sensor includes a substrate with a magnetic field sensor mounted on the substrate. The magnetic field sensor has a first surface defining a plane. A magnetic flux conducting member has a second surface that is not parallel to the first surface. A non-magnetic member is situated between the magnetic field sensor and the magnetic flux conducting member. | 12-03-2009 |
20090295382 | METHODS AND SYSTEMS FOR MAGNETIC FIELD SENSING - One embodiment relates to a sensor. The sensor includes a first magnet having a first surface and a second magnet having a second surface. A differential sensing element extends alongside the first and second surfaces. The differential sensing element includes a first sensing element and a second sensing element. In addition, a layer of ferromagnetic or paramagnetic material runs between the first and second magnets and spaces the first and second magnets from one another. Other apparatuses and methods are also set forth. | 12-03-2009 |
20090295383 | Wireless Biliary Stent System with Wishbone-Array Resonant Magnetoelastic Sensor and Conformal Magnetic Layer - A stent and a magnetoelastic resonant sensor are provided for sensor a physical characteristic in a bodily vessel or cavity. External coils interact with the sensor to induce a resonance that is responsive to the physical characteristic, such that the device may wirelessly measure physical characteristics such as mass loading effects and viscosity changes due to progression of pathology in implanted stents and stent grafts. The sensor may be fashioned from a magnetoelastic material and may be integrated near the inner sidewall of the stent. The sensor may take on a complex patterned shape to enhance the sensitivity and flexibility of the sensor structure. When the sensor is interrogated with a time-varying magnetic field, the sensor will mechanically vibrate and generate a magnetic flux which is maximum at a resonant characteristic determined by the mass load on the sensor and the viscosity of the fluid surrounding the sensor. By correlating the measured resonant characteristic to the mass load and viscosity, the pathological state in and around the stent can be determined. | 12-03-2009 |
20090315551 | Linear magnetoresistance sensor - A linear (or substantially linear) magnetoresistance sensor is provided. The magnetoresistance sensor may use one of the following magnetotransport mechanisms: classical magnetoresistance (MR) or quantum MR effects. In the classical regime, the sensor may be composed of a polycrystalline narrow gap semiconductor that has a varying mobility (instead of a constant mobility). The material's varying mobility enables the magnetoresistive sensor to have: (1) a linear magnetoresistance; (2) a high temperature response; and (3) an ability to respond to the highest possible fields. In the quantum regime, the sensor may be composed of a single crystal narrow gap semiconductor that is sufficiently doped so that the material may exhibit a linear response in a temperature range of 50K-175 K. | 12-24-2009 |
20090315552 | MAGNETIC DETECTION DEVICE HAVING BRIDGE CIRCUIT PROVIDED WITH RESISTANCE ADJUSTMENT PORTION AND METHOD OF MANUFACTURING THE SAME - In a magnetic detection device using a magnetic resistance element, the resistance of a layer having a multi-layer structure can be easily adjusted without causing damages to the layer. A magneto-resistance layer is connected in series to a reference resistance layer, and a magneto-resistance layer is connected in series to a reference resistance layer on a substrate. A voltage is applied between a power supply layer and a grounding layer. A first output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. A second output conductive layer and the reference resistance layer extend in parallel to each other so that they are partially electrically connected to each other via a connection layer. Accordingly, it is possible to adjust the resistance of the reference resistance layers by selecting the respective positions of the connection layers. | 12-24-2009 |
20100001723 | BRIDGE TYPE SENSOR WITH TUNABLE CHARACTERISTIC - A bridge type magnetic sensor is disclosed having four resistive elements in a bridge arrangement, two of the resistive elements on opposing sides of the bridge having a magnetoresistive characteristic such that their resistance increases with increasing positive magnetic field and with increasing negative magnetic field. A frequency doubling is obtained because the output characteristic of the magnetic sensor is a V-shaped curve, where the signal rises for increasing positive and negative fields. | 01-07-2010 |
20100013471 | MR MAGNETOMETER WITH COMBINED FLIP COIL AND COMPENSATION COIL - Compensation coil functionality and flip coil functionality are combined into a single combination coil that is placed under an angle α with respect to the length direction of a magneto-resistive sensor element. The angle α substantially deviates from 0° and 90°. This configuration enables to reduce the width of the current line of the planar combination coil, to reduce the effective threshold for sensor element switching, and to include features to simplify a 2D sensor design. | 01-21-2010 |
20100026288 | Electronic Circuit and Method for Resetting a Magnetoresistance Element - An electronic circuit includes a primary magnetoresistance element for providing a first output signal proportional to a magnetic field. The primary magnetoresistance element has a primary maximum response axis. The primary magnetoresistance element also has a hysteresis characteristic. The electronic circuit also includes a reset conductor disposed proximate to the magnetoresistance element. The electronic circuit also includes a secondary magnetic field sensing element for providing a second output signal proportional to a magnetic field. The secondary magnetic field sensing element has a secondary maximum response axis, which, in some embodiments, is substantially perpendicular to the primary maximum response axis. In operation, the primary magnetoresistance is reset in accordance with an excessive magnetic field sensed by the secondary magnetic field sensing element. | 02-04-2010 |
20100026289 | Electronic Circuit Configured to Reset a Magnetoresistance Element - An electronic circuit includes a magnetoresistance element for providing an output signal proportional to a magnetic field. The magnetoresistance element also has a hysteresis characteristic. The electronic circuit also includes at least one of a reset conductor or a bias conductor disposed proximate to the magnetoresistance element. For embodiments having a reset conductor, the electronic circuit is configured to generate a reset current carried by the reset conductor in response to the comparison. In response to the reset current, the reset conductor is configured to generate a reset magnetic field at the magnetoresistance element to temporarily force the magnetoresistance element to a saturation region of the hysteresis characteristic. | 02-04-2010 |
20100026290 | MICROELECTROMECHANICAL MAGNETOMETER WITH INTEGRATED ELECTRONICS - A method of manufacturing an apparatus | 02-04-2010 |
20100033175 | MAGNETO-RESISTIVE SENSOR - A high-performance, integrated AMR sensor has compensation and flipping coils for signal conditioning of the sensor output. At least one of the coils is formed in the laminate that connects the AMR sensor with its IC within a single package. As a result, the dimensions of the die area of the AMR sensor and the package size can be kept small. | 02-11-2010 |
20100045283 | MAGNETIC SENSOR AND MAGNETIC SENSOR DEVICE - A magnetic sensor arranged on a second line forming an angle of 45° at a switched position for switching a state being set up on a first line that projects displacement of center of magnetic field generating means generating a magnetic field. | 02-25-2010 |
20100052672 | INTEGRATED CIRCUIT WITH MAGNETIC MATERIAL MAGNETICALLY COUPLED TO MAGNETO-RESISTIVE SENSING ELEMENT - An integrated circuit including a first magneto-resistive sensing element, magnetic material and a spacer. The magnetic material is situated laterally to the first magneto-resistive sensing element. The spacer is situated between the first magneto-resistive sensing element and the magnetic material. The magnetic material is magnetically coupled to the first magneto-resistive sensing element. | 03-04-2010 |
20100066356 | SENSOR DEVICE COMPRISING MEANS FOR DETERMINING THE SAMPLE COVERED AREA OF THE SENSITIVE SURFACE - The invention relates to a microelectronic device ( | 03-18-2010 |
20100066357 | APPARATUS AND METHOD FOR MEASURING CRITICAL CURRENT PROPERTIES OF A COATED CONDUCTOR - The transverse critical-current uniformity in a superconducting tape was determined using a magnetic knife apparatus. A critical current I | 03-18-2010 |
20100090692 | MAGNETIC SENSOR MODULE AND PISTON POSITION DETECTOR - A magnetic sensor module which includes: a semiconductor substrate including an integrated circuit for switching operation; a magneto-resistive element which is disposed on a first surface of the semiconductor substrate and has a magneto-sensitive direction in a direction along the first surface; and a bias magnetic field applying member provided on the semiconductor substrate and disposed on a surface which is parallel to the first surface, wherein: the bias magnetic field applying member is magnetized in a direction along the surface on which the bias magnetic field applying member is disposed; and when no external magnetic field is applied, the bias magnetic field applying member applies a bias magnetic field in the direction along the first surface on which the magneto-resistive element is provided. | 04-15-2010 |
20100141251 | MAGNETIC DETECTION DEVICE - A magnetic detection device includes a sensor unit including a sensor pattern having a plurality of magnetoresistance effect films whose ends in the length direction thereof are coupled via return portions, and electrode units formed at both ends of the sensor pattern in the longitudinal direction thereof. A non-magnetic conductor is electrically connected across a top surface of one of a pair of magnetoresistance effect films that are coupled via the corresponding one of the return portions and that face each other and a top surface of the other magnetoresistance effect film. Therefore, the resistance value between the electrode units can be adjusted without increasing the dimensions of the sensor unit, and deterioration or variation in magnetic characteristics can be reduced. | 06-10-2010 |
20100156405 | MAGNETIC FIELD DETECTION DEVICE - A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed. | 06-24-2010 |
20100171494 | Method and Apparatus for Testing Magnetoresistive Effect Element - A method for testing an MR element includes a step of obtaining a ferromagnetic resonance frequency f | 07-08-2010 |
20100182003 | MAGNETIC FILM SENSOR AND METHOD OF MANUFACTURING THE SAME - A magnetic film sensor comprises a magnetic film for generating a magnetostriction, and a magnetostrictive structure for generating a magnetostriction in the magnetic film. The magnetostrictive structure is constructed so as to generate a magnetostriction by curving the magnetic film, for example. The magnetostrictive structure is obtained, for example, by providing a depressed insulating layer having a surface formed with a depression and forming the magnetic film across the depression. | 07-22-2010 |
20100194387 | MAGNETORESISTANCE SENSOR AND METHOD OF OPERATING A MAGNETORESISTANCE SENSOR - A magnetoresistive sensor system ( | 08-05-2010 |
20100201356 | SENSOR - A sensor including a substrate and magnetic material. The substrate has a main major surface and includes at least two spaced apart ferromagnetic layers. The magnetic material encapsulates the substrate such that the magnetic material is adjacent the main major surface. | 08-12-2010 |
20100207623 | SENSOR DEVICE AND METHOD - The invention relates to a method and a sensor device ( | 08-19-2010 |
20100213933 | MAGNETIC FIELD SENSING DEVICE - A magnetic field sensing device for determining the strength of a magnetic field, includes four magnetic tunnel junction elements or element arrays ( | 08-26-2010 |
20100213934 | HIGH MAGNETIC MOMENT PARTICLE DETECTION - A device includes a sensor surface and a pair of electrodes. The sensor surface includes a first conductive layer separated from a second conductive layer by an intermediary layer, a magnetization direction of the first conductive layer and a magnetization direction of the second conductive layer having a ground state orientation of approximately 0 degrees. An electrical resistance between the pair of electrodes is determined by a magnetic field proximate the sensor surface. | 08-26-2010 |
20100219822 | Magnetic Field Detection Apparatus and Measurement Apparatus - There has been a problem that a bridge circuit using magneto-resistive elements or transducer elements could output a signal including an offset voltage, which could result in lower measurement accuracy. In order to solve such a problem, half-bridges each having magneto-resistive elements or transducer elements are excited with different excitation voltages so that the offset voltage is eliminated and the measurement accuracy is improved. | 09-02-2010 |
20100231213 | MAGNETORESISTIVE SENSOR AS TEMPERATURE SENSOR - A detection system ( | 09-16-2010 |
20100231214 | DETECTION OF MAGNETIC BEADS USING A MAGNETORESISTIVE DEVICE TOGETHER WITH FERROMAGNETIC RESONANCE - A method and apparatus for detecting the presence of magnetic beads is disclosed. By providing both a static magnetic field and a magnetic field that alternates in the MHz range, or beyond, the bead can be excited into FMR (ferromagnetic resonance). The appearance of the latter is then detected by a magneto-resistive type of sensor. This approach offers several advantages over prior art methods in which the magnetic moment of the bead is detected directly. | 09-16-2010 |
20100237859 | CIRCUITRY, SYSTEMS AND METHODS FOR DETECTING MAGNETIC FIELDS - Circuitry for detecting magnetic fields includes a first magnetoresistive sensor and a second magnetoresistive sensor configured to form a gradiometer. The circuitry includes a digital signal processor and a first feedback loop coupled between the first magnetoresistive sensor and the digital signal processor. A second feedback loop which is discrete from the first feedback loop is coupled between the second magnetoresistive sensor and the digital signal processor. | 09-23-2010 |
20100253330 | MAGNETIC SENSOR AND MAGNETIC SENSOR MODULE - A magnetic sensor including a magnetoresistive effect element has the following structure. Element units each having an element width W | 10-07-2010 |
20100259257 | MAGNETIC SENSOR AND MAGNETIC SENSOR MODULE - Magnetoresistive effect elements are provided with an element unit having an elongated shape in which an element length L | 10-14-2010 |
20100271018 | SENSORS FOR MINUTE MAGNETIC FIELDS - A magnetic sensor includes a flux concentrator and a transducer producing an output responsive to a change in magnetization in the flux concentrator. The flux concentrator can include first, second and third portions, wherein the third portion is between the first and second portions and the cross-sectional area of the third portion is smaller than the cross-sectional area of the first and second portions, and the transducer can produce an output responsive to a change in magnetization in the third portion of the flux concentrator. | 10-28-2010 |
20100283457 | MAGNETIC SENSOR AND METHOD FOR PRODUCING THE SAME - A magnetoresistive element includes, in plan view, an element section and an extension region extending from an end portion of the element section; and an insulation layer is formed on the element section and the extension region. A contact hole having a recessed shape, penetrating through the insulation layer, and extending at least to the extension region is formed; an electrode pad is formed in the contact hole; a surface of the electrode pad is exposed to outside; and the electrode pad is electrically connected to the extension region. The element section and the extension region are integrally formed so as to have an identical layer configuration employing a magnetoresistive effect in which electrical resistance varies in response to external magnetic fields. | 11-11-2010 |
20100283458 | MATCHING OF GMR SENSORS IN A BRIDGE - A magnetoresistive (MR) sensing device includes MR elements electrically connected to form a bridge circuit and one or more non-functional (or “dummy”) MR elements for improved matching of the bridge circuit MR elements. | 11-11-2010 |
20100321014 | EXTERNAL MAGNETIC FIELD ANGLE DETERMINATION - Magnetoresistive sensors are commonly used for angular detection in many automotive applications. According to an exemplary embodiment of the present invention, a sensor is provided in which a first half-bridge has magnetoresistive resistors with barber-pole stripes and in which a second half-bridge has magnetoresistive resistors without barber-pole stripes. One of the resistors without barber-pole stripes is rotated with respect to the other three resistors by 90°. This may provide for an improved angle determination with reduced angular errors due to offset. | 12-23-2010 |
20100327864 | MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF - A magnetoresistive element formed by a strip of magnetoresistive material which extends on a substrate of semiconductor material having an upper surface. The strip comprises at least one planar portion which extends parallel to the upper surface, and at least one transverse portion which extends in a direction transverse to the upper surface. The transverse portion is formed on a transverse wall of a dig. By providing a number of magnetoresistive elements perpendicular to one another it is possible to obtain an electronic compass that is insensitive to oscillations with respect to the horizontal plane parallel to the surface of the Earth. | 12-30-2010 |
20110025318 | MAGNETIC SENSOR WITH BRIDGE CIRCUIT INCLUDING MAGNETORESISTANCE EFFECT ELEMENTS - A magnetic sensor for detecting a direction of an external magnetic field comprises: a bridge circuit configured to provide an output that changes in accordance with the direction of the external magnetic field, the bridge circuit including four resistance element sections, each of which comprises at least one magnetoresistance effect element; and two resistors connected to respective output terminals of the bridge circuit. The ratio of the resistance of each of the resistors to that of the bridge circuit is at least 2 when the resistance of each of the resistance element sections is at a minimum corresponding to a change in magnetoresistance. | 02-03-2011 |
20110025319 | MAGNETIC SENSOR INCLUDING A BRIDGE CIRCUIT - A magnetic sensor includes a bridge circuit with a first, a second, a third, and a fourth resistor annularly and electrically connected together in this order, and a compensation resistor. The compensation resistor is connected to a first point between the fourth resistor and the first resistor. The first to fourth resistors include a first to fourth tunnel magneto-resistance element, respectively. Each of the magnetization directions in the magnetization fixed layers in the second and fourth magneto resistance elements is opposite to the magnetization direction in the magnetization fixed layer in the first magneto resistance element. The magnetization direction in the magnetization fixed layer in the third magneto resistance element is the same as the magnetization direction in the magnetization fixed layer in the first magneto resistance element. The resistance of the compensation resistor varies with a period of 180 degrees with respect to a rotation angle of the external field. | 02-03-2011 |
20110025320 | MAGNETIC SENSOR - A magnetoresistive element includes magnetoresistive films each having an upper surface and a lower surface, and conductors combining the magnetoresistive films in series and including top electrodes and bottom electrodes. Each one of the top electrodes and corresponding one of the bottom electrodes oppose each other to sandwich corresponding one of the magnetoresistive films. Each electrode of the top electrodes and the bottom electrodes includes a stem section and a branch section, the stem section extending in a direction along a series alignment direction of the magnetoresistive films, and the branch section extending along the lamination plane in a direction intersecting a direction in which the stem section extends. The branch section in the top electrode is in contact with an upper surface of the corresponding magnetoresistive film, and the branch section in the bottom electrode is in contact with a lower surface of the corresponding magnetoresistive film. | 02-03-2011 |
20110025321 | MAGNETIC SENSOR - A magnetic sensor includes first to fourth MR elements. The first and second MR elements are connected at respective ends thereof through a first connecting portion in a central region. The third and fourth MR elements are connected at respective ends thereof through a second connecting portion that crosses the first connecting portion with a distance in a thickness direction in the central region. The first and fourth MR elements are connected at respective other ends thereof through a third connecting portion, and the second and third MR elements are connected at respective other ends thereof through a fourth connecting portion. Resistance values of the first and third MR elements change in a same increasing/decreasing direction, whereas resistance values of the second and fourth MR elements change in an increasing/decreasing direction opposite to the first and third MR elements, depending on an external signal magnetic field. | 02-03-2011 |
20110025322 | MAGNETO-RESISTANCE EFFECT ELEMENT AND SENSOR - A magneto-resistance effect element for a sensor to sense a variation in externally applied magnetism includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction which varies in response to an external magnetic field, and an intermediate layer provided between the pinned layer and the free layer. The pinned layer has a planar shape which is long in the fixed magnetization direction and which is short in a direction orthogonal to the fixed magnetization direction. Moreover, the pinned layer preferably has a planar shape in which the pinned layer is divided into a plurality of sections. | 02-03-2011 |
20110037464 | TUNABLE GRAPHENE MAGNETIC FIELD SENSOR - A magnetic field sensor employing a graphene sense layer, wherein the Lorentz force acting on charge carriers traveling through the sense layer causes a change in path of charge carriers traveling through the graphene layer. This change in path can be detected indicating the presence of a magnetic field. The sensor includes one or more gate electrodes that are separated from the graphene layer by a non-magnetic, electrically insulating material. The application of a gate voltage to the gate electrode alters the electrical resistance of the graphene layer and can be used to control the sensitivity and speed of the sensor. | 02-17-2011 |
20110043201 | DETECTION OF MAGNETIC BEADS USING A MAGNETORESISTIVE DEVICE TOGETHER WITH FERROMAGNETIC RESONANCE - A method and apparatus for detecting the presence of magnetic beads is disclosed. By providing both a static magnetic field and a magnetic field that alternates in the MHz range, or beyond, the bead can be excited into FMR (ferromagnetic resonance). The appearance of the latter is then detected by a magneto-resistive type of sensor. This approach offers several advantages over prior art methods in which the magnetic moment of the bead is detected directly. | 02-24-2011 |
20110057650 | Current sensor, current measuring module and method for measuring current - A current sensor for measuring a current in a conductor includes two magnetic field sensors located adjacent to the conductor. The magnetic field sensors are at least two-dimensional magnetic field sensors having two measuring directions, thereby facilitating compensation for an inhomogeneous interference field. | 03-10-2011 |
20110057651 | OXYGEN CONCENTRATION MEASUREMENT WITH GMR - In an embodiment, an oxygen sensor comprises a giant magnetoresistance device ( | 03-10-2011 |
20110068786 | MAGNETIC SENSOR AND MANUFACTURING METHOD THEREOF - A magnetic sensor includes: a first and a second magnetoresistive elements each including: a magnetization free layer; a nonmagnetic spacing layer; a magnetization pinned layer having one or more first layers of a first group of ferromagnetic layers and one or more second layers of a second group of ferromagnetic layers, in which the first layer and the second layer are stacked alternately with a nonmagnetic coupling layer in between, and so antiferromagnetically coupled to each other as to have opposite magnetizations to each other; and an antiferromagnetic layer pinning magnetization orientation in the one or more first and the second layers. The first layers in the first magnetoresistive element are one more in number than that of the one or more second layers. The number of the one or more first layers and that of the one or more second layers in the second magnetoresistive element are equal. | 03-24-2011 |
20110074406 | THREE AXIS MAGNETIC FIELD SENSOR - Three bridge circuits ( | 03-31-2011 |
20110080165 | MAGNETIC BALANCE TYPE CURRENT SENSOR - A magnetic balance type current sensor measures a measured current which flows in a feedback coil when electrical conduction is provided by a voltage difference according to an induction magnetic field from the measured current and an equilibrium state is reached in which the induction magnetic field and a cancel magnetic field cancel each other. Sensor elements in a pair are arranged at positions with magnetic field from the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of one sensor element is aligned in a forward direction with respect to the magnetic field formed by the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of the other sensor element is aligned in a reverse direction with respect to the magnetic field formed by the measured current. | 04-07-2011 |
20110089940 | MAGNETORESISTIVE SENSOR EMPLOYING NITROGENATED Cu/Ag UNDER-LAYERS WITH (100) TEXTURED GROWTH AS TEMPLATES FOR CoFe, CoFeX, AND Co2(MnFe)X ALLOYS - A magnetoresistive sensor that has a free layer with a face centered cubic, 100 crystal orientation formed on an underlayer structure that has been deposited in the presence of nitrogen. The free layer can be constructed of CoFe, Co | 04-21-2011 |
20110089941 | MAGNETIC SENSOR AND MAGNETIC SENSOR MODULE - An element connection body includes an element portion, an intermediate permanent magnet layer, and an outer permanent magnet layer. The element portion has recessed portions formed in an upper surface or a lower surface of a non-magnetic layer or formed midway in the thickness direction of the non-magnetic layer from a free magnetic layer. The permanent magnet layers are formed in the recessed portions. The permanent magnet layers and an overall thickness of the free magnetic layer face each other in the element length direction of the element portion. A fixed magnetic layer extends, without being separated, over an entirety in the element length direction of the element connection body. | 04-21-2011 |
20110095756 | MAGNETOCHEMICAL SENSOR - The application is directed to a sensor element for use in a magnetochemical sensor, which comprises a first gel-like material ( | 04-28-2011 |
20110115482 | ULTRASENSITIVE DETECTION PLATFORM FOR SENSING MAGNETIC AND/OR ELECTRICAL ENERGY CHANGE - A scalable and ultrasensitive frequency-shift magnetic array scheme. The theoretical limit of the sensor noise floor is shown to be dominated by the phase noise of the sensing oscillators. To increase the sensitivity, a noise suppression technique, Correlated Double Counting (CDC), is described with no power overhead. As an implementation example, a 64-cell sensor array is designed in a standard 65 nm CMOS process. The CDC scheme achieves an additional 6 dB noise suppression. The magnetic sensing capability of the presented sensor is verified by detecting micron size magnetic particles with an SNR of 14.6 dB for a single bead and an effective dynamic range of at least 74.5 dB. Applications in biosensing are contemplated, among other possible uses. Measurement of electrical properties is also contemplated. | 05-19-2011 |
20110121828 | MAGNETORESISTIVE SENSOR ARRANGEMENT FOR CURRENT MEASUREMENT - A sensor unit for the measurement of a current in a conductor ( | 05-26-2011 |
20110133733 | MAGNETIC FIELD SENSOR DEVICE - A magnetic field sensor device | 06-09-2011 |
20110148408 | MEASURING APPARATUS FOR MEASURING MAGNETIC PROPERTIES, AND METHOD FOR PRODUCING SUCH A MEASURING APPARATUS - Measuring apparatus for measuring magnetic properties of the area surrounding the measuring apparatus with a sensor row comprising at least two magnetoresistive sensor elements, which are arranged in a row that extends in a row direction, and a supporting field apparatus with generates a magnetic supporting field having a magnetic field component which points in the row direction and the field strength of which vanes in the row direction, wherein this field strength profile in the row direction does not have a zero crossing and/or a maximum or minimum on at least two sensor edges of the sensor elements which for the sensor row, which sensor edges are arranged after one another in the row direction. | 06-23-2011 |
20110156702 | Stray Field Collector Pad, and Bio-Molecule Sensing Module or Biochip Using the Same - Provided is a stray field collector (SFC) pad and a bio-molecule sensing module or a biochip using the same, and more particularly, a SFC pad, in which probe or detection molecules are attached to a plurality of magnetic labels (magnetic particles or beads) and they are bonded to complementary molecules to enhance a stray field sensor signal of the magnetic labels remaining in the vicinity of the sensor, and a bio-molecule sensing module and a biochip using the same. | 06-30-2011 |
20110163745 | CONSTRUCTION ELEMENT MADE OF A FERROMAGNETIC SHAPE MEMORY MATERIAL AND USE THEREOF - The invention relates to the field of materials science and relates to a component, which can be used, for example, for microcomponents, microsensors and microactuators. The object of the present invention is to disclose a component in which a clearly greater relative length change occurs. The object is attained through a component of a ferromagnetic shape memory material, produced by a method in which at least one sacrificial layer is applied onto a single-crystalline or biaxially textured substrate, onto which sacrificial layer an epitaxial or textured layer of a ferromagnetic shape memory material with a layer thickness of ≦50 μm is applied, subsequently the sacrificial layer is removed at least partially, and during or after the layer application a structuring at least of the ferromagnetic shape memory material is realized such that an aspect ratio is achieved in which at least one length is greater by at least a factor of 3 than the thickness of the layer or the shortest dimension of the component. | 07-07-2011 |
20110163746 | Integrated Lateral Short Circuit for a Beneficial Modification of Current Distribution Structure for xMR Magnetoresistive Sensors - The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device. | 07-07-2011 |
20110169488 | METHOD AND STRUCTURE FOR TESTING AND CALIBRATING MAGNETIC FIELD SENSING DEVICE - A method of sensing a magnetic field including at least one magnetoresistive sensing element ( | 07-14-2011 |
20110175606 | THIN-FILM MAGNETIC SENSOR AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin-film magnetic sensor including: a giant magnetoresistive film having a giant magnetoresistive effect, and thin-film yokes each composed of a soft magnetic material and electrically connected to both ends of the giant magnetoresistive film, in which each of the thin-film yokes includes an outer yoke which is composed of a first soft magnetic material and is provided outward with respect to the giant magnetoresistive film and an inner yoke which is composed of a second soft magnetic material and is provided between the giant magnetoresistive film and the outer yoke; the first soft magnetic material is composed of a crystalline or microcrystalline soft magnetic material; the thin-film magnetic sensor is obtained by (1) forming the each outer yoke, the giant magnetoresistive film and the each inner yoke in this order, and (2) performing a heat treatment for improving soft magnetic characteristics of the each outer yoke before forming the giant magnetoresistive film; and a length L | 07-21-2011 |
20110187361 | MAGNETIC FIELD SENSOR - An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure. | 08-04-2011 |
20110193557 | CURRENT SENSOR INCLUDING A SINTERED METAL LAYER - An integrated circuit includes a semiconductor die including a first magnetic field sensor. The integrated circuit includes an isolation material layer over the first magnetic field sensor and a sintered metal layer over the isolation material layer. The first magnetic field sensor is configured to sense a magnetic field generated by a current passing through the sintered metal layer. | 08-11-2011 |
20110199078 | LINEAR-WITH-MAGNETIC FIELD MAGNETORESISTANCE DEVICE - A magnetic field measuring system is disclosed. The magnetic field measuring system includes a substrate, a conductive well formed in the substrate, the well having a first side with a first length, a first contact electrically coupled to the conductive well at a first location of the first side, a second contact electrically coupled to the conductive well at a second location of the first side, wherein the distance between the first location and the second location is less than the first length, a stimulus circuit coupled to the first contact and the second contact, and a sensor for identifying a property indicative of the length of a current path from the first location to the second location through the conductive well. | 08-18-2011 |
20110199079 | CURRENT SENSOR AND BATTERY WITH CURRENT SENSOR - A current sensor includes a magnetic detection element having a resistance value changed by applying inductive magnetic field from measurement target current, a magnetic core provided in the vicinity of the magnetic detection element, and a coil generating magnetic field attenuating the inductive magnetic field. A constant level current in a predetermined range of output voltage of the magnetic detection element flows in the coil, and the measurement target current is detected on the basis of the output voltage of the magnetic detection element. | 08-18-2011 |
20110204889 | CURRENT SENSOR - A current sensor includes a magnetic equilibrium sensor including a magnetic sensor element with characteristics changed by an inductive magnetic field from a measurement target current and a feedback coil provided in the vicinity of the magnetic sensor element and generating a canceling magnetic field canceling the inductive magnetic field, a shunt resistor connected to a current line through which the measurement target current flows, and a switching unit switching between shunt resistor detection of sensing and outputting a voltage difference of the shunt resistor, and magnetic equilibrium detection of sensing and outputting a current flowing in the feedback coil in an equilibrium state where current flows in the feedback coil according to the inductive magnetic field and the inductive magnetic field and the canceling magnetic field cancel each other. | 08-25-2011 |
20110210726 | ELECTROCHEMICAL BIOSENSOR MEASURING SYSTEM - Disclosed are an electrochemical biosensor which comprises a production lot information identification portion, on which information is recorded in a magnetization mark, and a measuring device which can automatically identify the production lot information of the biosensor with the insertion of the electrochemical biosensor into the measuring device. The electrochemical biosensor and the measuring device thereof can record production lot information in the form of magnetization marks on an electrochemical biosensor strip and read the information as digital signals through a magnetoresistance sensor device, which can be mounted on the surface of a circuit board using Surface Mounted Technology (SMT). Without the need for a high-priced filter or a complicated calculation system, the magnetic detector system has a simple construction and realizes economic efficiency in the construction of the measuring device. Also, the measuring device automatically identifies the production lot information recorded on the biosensor, so that inconvenience and the frequency of errors, which occur when a user personally inputs the production lot information, can be reduced, with the result that the measured values can be conveniently and accurately acquired. | 09-01-2011 |
20110210727 | INTEGRATED SENSOR AND MAGNETIC FIELD CONCENTRATOR DEVICES - Embodiments relate to integrated sensor and magnetic concentrator devices and methods. In one embodiment, an integrated sensor and magnetic field concentrator device comprises a sensor device comprising at least two xMR sensor elements spaced apart from each other on a surface of a die to define a first gap of about 5 millimeters (mm) or less; and a magnetic field concentrator disposed in the first gap and configured to guide magnetic flux from an external source in a direction perpendicular to the at least two xMR sensor elements. | 09-01-2011 |
20110215800 | MR sensor with flux guide enhanced hard bias structure - A CPP MR sensor interposes a tapered soft magnetic flux guide (FG) layer between a hard magnetic biasing layer (HB) and the free layer of the sensor stack. The flux guide channels the flux of the hard magnetic biasing layer to effectively bias the free layer, while eliminating instability problems associated with magnetostatic coupling between the hard bias layers and the upper and lower shields surrounding the sensor when the reader-shield-spacing (RSS) is small. | 09-08-2011 |
20110215801 | LOW NOISE MAGNETIC FIELD SENSOR USING A LATERAL SPIN TRANSFER - The present invention relates to a magnetoresistive sensor comprising a first pinned-magnetization magnetic layer ( | 09-08-2011 |
20110221433 | MAGNETIC SENSOR - A magnetic sensor includes a spin valve-type magneto-resistive element, a voltage detection part, a coil, and a current control part, the coil being configured to apply a measuring magnetic field to the spin valve-type magneto-resistive element upon application of a current, the voltage detection part being configured to output a detection signal to the current control part upon detecting an output voltage of the spin valve-type magneto-resistive element reaching a predetermined voltage value, the current control part being configured to control the current to unidirectionally increase or unidirectionally decrease a strength of the measuring magnetic field from an initial value, but upon input of the detection signal, control the current to return the strength of the measuring magnetic field to the initial value, the initial value being a magnetic field strength where the spin valve-type magneto-resistive element reaches saturation magnetization. | 09-15-2011 |
20110221434 | CURRENT SENSOR INCLUDING MAGNETIC DETECTING ELEMENT - A current sensor includes a magnetic detecting element, a bridge circuit including a plurality of resistance elements, and a feedback coil placed adjacent to the magnetic detecting element and generating a cancelling magnetic field for cancelling the induced magnetic field based on the output from the bridge circuit. The wiring patterns forming the bridge circuit are routed so as not to intersect with each other when seen in a plan view. Only the resistance elements constituting each series circuit of the bridge circuit are connected to each other by the wiring pattern in an enclosed area which encloses each resistance element constituting the bridge circuit, and the wiring pattern branched from the wiring pattern is connected to the terminal which is installed in a quantity of only one, outside the enclosed area. | 09-15-2011 |
20110221435 | MAGNETIC SENSOR AND MAGNETIC BALANCE TYPE CURRENT SENSOR INCLUDING THE SAME - A magnetic sensor includes a magnetoresistance effect element and a hard bias layer. The magnetoresistance effect element is configured to have a striped form which has a sensitivity axis in a predetermined direction, and configured to have a structure in which a free magnetic layer, in which magnetization varies with respect to an external magnetic field, a non-magnetic layer, and a fixed magnetic layer, in which the magnetization is fixed, are laminated. The hard bias layer is disposed in a longitudinal direction of the striped form, disposed outside of the magnetoresistance effect element to be separated from the magnetoresistance effect element. | 09-15-2011 |
20110221436 | CURRENT SENSOR - A current sensor including a magnetic detecting bridge circuit which is constituted of four magneto-resistance effect elements with a resistance value varied by application of an induced magnetic field from a current to be measured, and which has an output between two magneto-resistance effect elements. The four magneto-resistance effect elements have the same resistance change rate, and include a self-pinned type ferromagnetic fixed layer which is formed by anti-ferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film via an antiparallel coupling film therebetween, a nonmagnetic intermediate layer, and a soft magnetic free layer. Magnetization directions of the ferromagnetic fixed layers of the two magneto-resistance effect elements providing the output are different from each other by 180°. The magnetic detecting bridge circuit has wiring symmetrical to a power supply point. | 09-15-2011 |
20110221437 | WIDEBAND TRANSDUCER FOR MEASURING A BROAD RANGE OF CURRENTS IN HIGH VOLTAGE CONDUCTORS - A system and method for measuring electrical current by measuring magnetic flux density is presented. A magnetic flux density measuring device for measuring a magnetic field strength generated by a current in a conductor includes a ring, a pair of metal strips with high magnetic permeability and a magnetic field sensor. The ring is generally concentric with the conductor and supports the pair of metal strips. The metal strips are located back-to-back and form a gap between the metal strips. The sensor located in the gap to measure the magnetic field strength in the gap. | 09-15-2011 |
20110227569 | MAGNETOMETER - A magnetometer with only a SET operation for initiating a magnetic orientation within a magnetic field sensor based on anisotropic magnetoresistive (AMR) technology. Within the magnetometer, the relative orientations of the respective X, Y and Z axes detectors are maintained by a package in which all detectors are mounted on a single assembly with the Z axis sensor displaced and held orthogonal to the other two sensors by potting material. Shorting bars on respective barber pole structures are provided with a geometry that allows for closer placement of adjacent barber poles to one another. The barber pole structures are deposited in a nested orientation which provides for balanced resistance legs in a Wheatstone bridge construction. | 09-22-2011 |
20110241664 | MAGNETIC BIOSENSOR AND A MAGNETIC BIOSENSOR ARRAY COMPRISING THE SAME - The magnetic sensor device disclosed herein uses a signal storage magnetic layer for sensing and storing target magnetic field signals. The stored magnetic field signals are then measured by a magnetic sensor. | 10-06-2011 |
20110260724 | MAGNETIC DETECTION APPARATUS - A magnetic detection apparatus includes a first comparison circuit that waveform-shapes the amplitude of a detection signal from magneto-electric transducers by DC coupling, a third comparison circuit that waveform-shapes the detection signal by AC coupling, an oscillation circuit having a natural frequency, a control circuit that counts the output of the first comparison circuit by using the oscillation means, and a selection circuit that selects the output of the first comparison means and the output of the second comparison means. The control circuit counts rising from the next rising or falling from the next falling of an output rectangular wave of the first comparison circuit, and provides output to the selection circuit at the time point at which the count value reaches a desired value. The selection circuit selects and outputs the output rectangular wave of the first comparison circuit or the third comparison circuit. | 10-27-2011 |
20110273174 | MAGNETIC FIELD DETECTION ELEMENT AND SIGNAL TRANSMISSION ELEMENT - A magnetic detection element includes a magnetoresistance effect portion composed of a magnetoresistance effect material and a pair of yoke portions. The pair of yoke portions is composed of a soft magnetic material and are respectively arranged so as to be electrically connected to both sides of the magnetoresistance effect portion. The pair of yoke portions guides magnetic flux into the magnetoresistance effect portion. The magnetic detection element also includes a bypass portion, which is composed of a soft magnetic material and is saturated with magnetic flux at lower magnetic field intensity than the yoke portions, and which guides a part of the magnetic flux generated in the yoke portions so as to divert the magnetic flux from the magnetoresistance effect portion. | 11-10-2011 |
20110285394 | SYSTEMS AND METHODS TO TEST AND/OR RECOVER MAGNETIC SENSORS WITH ESD OR OTHER DAMAGE - A system according to one embodiment includes a power supply for charging a lead of a magnetic sensor to a voltage; an interface for operatively coupling the power supply to the lead of the magnetic sensor; a relay for selectively coupling the lead of the magnetic sensor to ground for causing a discharge event, wherein the discharge event reverses a magnetic orientation of a pinned layer of the magnetic sensor; and a shorting resistor between the relay and ground. | 11-24-2011 |
20110285395 | MAGNETIC FIELD SENSOR - An AMR sensor, comprises at least first and second AMR sensor elements to which opposite bias fields are applied. The first and second AMR sensor element outputs are combined to derive a sensor response which is substantially anti-symmetric in the region close to zero external magnetic field. This arrangement shifts the zero detection point of the AMR sensor elements away from a maximum of the response curve, so that sensitivity in proximity to a zero input field is obtained. To overcome the problem that the response is not anti-symmetric, the signals from (at least) two sensor elements are combined. | 11-24-2011 |
20110298454 | Current Sensor - A current sensor includes a conductive element, at least two magnetic field sensors arranged on the conductive element and adapted to sense a magnetic field generated by a current through the conductor element. The at least two magnetic field sensors are arranged on opposite sides of a line perpendicular to a current flow direction in the conductive element, an insulating layer is arranged between the conductive element and the magnetic field sensors, and a conductor trace is connected to the magnetic field sensors. | 12-08-2011 |
20110298455 | Integrated Microfluidic Sensor System with Magnetostrictive Resonators - The present embodiments describe a method that integrates a magnetostrictive sensor with driving and detecting elements into a microfluidic chip to detect a chemical, biochemical or biomedical species. These embodiments may also measure the properties of a fluid such as viscosity, pH values. The whole system can be referred to lab-on-a-chip (LOC) or micro-total-analysis-systems (μTAS). In particular, this present embodiments include three units, including a microfluidics unit, a magnetostrictive sensor, and driving/detecting elements. An analyzer may also be provided to analyze an electrical signal associated with a feature of a target specimen. | 12-08-2011 |
20110298456 | TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS - In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. | 12-08-2011 |
20110309829 | Assembly for measuring at least one component of a magnetic field - The assembly for measuring at least one component (x, y, z) of an applied magnetic field (H) including a surface area made of soft-magnetic material that is applied in the chip plane and separated into two partial regions ( | 12-22-2011 |
20110316533 | GMR SENSORS HAVING REDUCED AMR EFFECTS - Embodiments related to giant magneto resistance (GMR) angle sensor layouts having reduced anisotropic magneto resistance (AMR) effects. Embodiments provide GMR angle sensor layouts that reduce or eliminate distortion related to AMR effects, can be more easily scaled up or down, and are more compact to use available surface area more efficiently. | 12-29-2011 |
20120001626 | MAGNETIC IMPEDANCE ELEMENT AND MAGNETIC SENSOR USING THE SAME - In order to provide a magnetic impedance element capable of achieving a large magnetic impedance effect at room temperature or higher, the magnetic impedance element includes a ceramic body represented by the chemical formula Sr | 01-05-2012 |
20120001627 | SURFACE-MOUNTABLE MAGNETIC FIELD SENSOR HAVING A SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A CIRCUIT BOARD HAVING A MAGNETIC FIELD SENSOR - A surface-mountable magnetic field sensor ( | 01-05-2012 |
20120007598 | MICROMACHINED MAGNETIC FIELD SENSORS - A micromachined magnetic field sensor integrated with electronics is disclosed. The magnetic field sensors utilize Hall-effect sensing mechanisms to achieve 3-axis sensing. A Z axis sensor can be fabricated either on a device layer or on a conventional IC substrate with the design of conventional horizontal Hall plates. An X and Y axis sensor are constructed on the device layer. In some embodiments, a magnetic flux concentrator is applied to enhance the performance of the magnetic field sensor. In some embodiments, the magnetic field sensors are placed on slope sidewalls to achieve 3-axis magnetic sensing system. In some embodiments, a stress isolation structure is incorporated to lower the sensor offset. The conventional IC substrate and device layer are connected electrically to form a 3-axis magnetic sensing system. The magnetic field sensor can also be integrated with motion sensors that are constructed in the similar technology. | 01-12-2012 |
20120013334 | Material Property Estimation Using Inverse Interpolation - Magnetic field sensor probes are disclosed which comprise primary or drive windings having a plurality of current carrying segments. The relative magnitude and direction of current in each segment are adjusted so that the resulting interrogating magnetic field follows a desired spatial distribution. By changing the current in each segment, more than one spatial distribution for the magnetic field can be imposed within the same sensor footprint. Example envelopes for the current distributions approximate a sinusoid in Cartesian coordinates or a first-order Bessel function in polar coordinates. One or more sensing elements are used to determine the response of a test material to the magnetic field. These sense elements can be configured into linear or circumferential arrays. | 01-19-2012 |
20120025819 | MAGNETORESISTIVE SENSOR - A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element. | 02-02-2012 |
20120032673 | MAGNETIC SENSOR - First magnetoresistive effect elements and second magnetoresistive effect elements and are formed on the same substrate. A pinned magnetic layer of each of the first magnetoresistive effect elements has a three-layer laminated ferrimagnetic structure including magnetic layers. A pinned magnetic layer of each of the second magnetoresistive effect elements has a two-layer laminated ferrimagnetic structure including magnetic layers. The magnetization direction of the third magnetic layer of each of the magnetoresistive effect elements is antiparallel to the magnetization direction of the second magnetic layer of each of the second magnetoresistive effect elements. | 02-09-2012 |
20120038358 | ULTRA-SENSITIVE MAGNETOIMPEDANCE SENSOR - Provided is a magnetoimpedance (MI) sensor having a high magnetic sensor sensitivity and a wide measurement range. The MI sensor comprises an MI element, an electric current supply unit and a signal processing circuit. The MI element comprises a magnetosensitive wire formed of an amorphous soft magnetic alloy having zero magnetostriction, and a detection coil provided around the magnetosensitive wire with an electric insulator disposed therebetween, thereby detecting voltage generated at the detection coil and corresponding to an external magnetic field upon application of a high frequency electric current to the magnetosensitive wire. The electric current supply unit supplies the high frequency electric current to the MI element. The signal processing circuit processes an output signal from the detection coil. In this MI sensor, the magnetosensitive wire has at least a surface layer in which spins are aligned in a circumferential direction of the wire, and the high frequency electric current has a frequency in the range of 0.3 to 1.0 GHz inclusive. | 02-16-2012 |
20120038359 | ROTATING FIELD SENSOR - A field generation unit generates a rotating magnetic field including a first partial magnetic field in a first position and a second partial magnetic field in a second position. The first and second partial magnetic fields differ in direction by 180° and rotate in the same direction of rotation. A first detection unit detects, in the first position, a first angle that the direction of a first applied field forms with respect to a first direction. The first applied field includes the first partial magnetic field as its main component. A second detection unit detects, in the second position, a second angle that the direction of a second applied field forms with respect to a second direction. The second applied field includes the second partial magnetic field as its main component. A detected value of the angle that the direction of the rotating magnetic field in a reference position forms with respect to a reference direction is calculated based on detected values of the first and second angles. | 02-16-2012 |
20120062223 | ECONOMICAL MAGNETIC LOCATOR APPARATUS AND METHOD - Magnetic locators for detection of buried objects, such as ferromagnetic objects, are disclosed. Inputs provided from one or more magnetic sensors, such as three three-axis magnetic sensors, as well as from other sensors, such as accelerometers and gyroscopic sensors, may be used to determine magnetic field distortion indicative of ferromagnetic objects and provide output information corresponding to the detected object. | 03-15-2012 |
20120062224 | MAGNETIC BALANCE TYPE CURRENT SENSOR - A magnetic balance type current sensor includes a magnetoresistance effect element whose resistance value changes owing to the application of an induction magnetic field from a current to be measured; a feedback coil disposed in the vicinity of the magnetoresistance effect element and generating a cancelling magnetic field cancelling out the induction magnetic field; a magnetic field detection bridge circuit including two outputs causing a voltage difference corresponding to the induction magnetic field to occur; and a magnetic shield attenuating the induction magnetic field and enhancing the cancelling magnetic field, wherein, on the basis of the current flowing through the feedback coil at the time of an equilibrium state in which the induction magnetic field and the cancelling magnetic field are cancelled out, the current to be measured is measured, wherein the feedback coil, the magnetic shield, and the magnetic field detection bridge circuit are formed on a same substrate. | 03-15-2012 |
20120068698 | STRUCTURE OF TMR AND FABRICATION METHOD OF INTEGRATED 3-AXIS MAGNETIC FIELD SENSOR AND SENSING CIRCUIT - A structure of TMR includes two magnetic tunneling junction (MTJ) devices with the same pattern and same magnetic film stack on a same conducting bottom electrode and a parallel connection of conducting top electrode. Each MTJ device includes a pinned layer on the bottom electrode, having a pinned magnetization; a non-magnetic tunneling on the pinned layer; and a free layer on the tunneling layer, having a free magnetization. These two MTJ devices have a collinear of easy-axis and their pinned magnetizations all are parallel to a same pinned direction which has an angle of 45 degree to easy-axis; their free magnetizations initially are parallel to the easy-axis but directions are mutual anti-parallel by applying a current generated ampere field. The magnetic field sensing direction is perpendicular to the easy-axis on the substrate. | 03-22-2012 |
20120081110 | CURRENT SENSOR - A current sensor comprises a flat housing made of plastic having an underside and an upper side and electrical connections, a current conductor through which the current to be measured flows, and a semiconductor chip having two magnetic field sensors, wherein the component of the magnetic field detected by the two magnetic field sensors points in opposite directions at the locations of the two magnetic field sensors. The semiconductor chip is connected as flipchip to the electrical connections. The current conductor extends from one side wall to the opposite side wall of the housing, is embedded flat in the underside of the housing and is therefore exposed on the underside of the housing. The opposing surfaces of the semiconductor chip and the current conductor are separated by an electrical insulation layer. | 04-05-2012 |
20120081111 | System For Signal Detection of Specimen Using Magnetic Resistance Sensor and Detecting Method of The Same - The present invention is to provide a measurement system using a magneto-resistance sensor, comprising a magneto-resistance sensor configured to sense a magnetic component of a target combined with a magnetic particles and an external magnetic field supplying unit configured to provide an external magnetic field of a first and a second directions to the magneto-resistance sensor, wherein the external magnetic field supplying unit comprises a magnetic field compensating unit configured to compensate a loss of magnetic field by circulating the external magnetic field of the second direction. | 04-05-2012 |
20120086446 | INTEGRATED MEMS DEVICE AND METHOD OF USE - An integrated MEMS device is disclosed. The system comprises a MEMS resonator; and a MEMS device coupled to a MEMS resonator. The MEMS resonator and MEMS device are fabricated on a common substrate so that certain characteristics of the MEM resonator and MEMS device track each other as operating conditions vary. | 04-12-2012 |
20120086447 | DEVICE FOR THE CONTINUOUS QUALITY CONTROL OF APPLIED ELEMENTS - A method for continuous quality control of geometric, structural and functional parameters of an applied element, such as a staple, in printed products. The quality control is realized with the aid of at least one measuring device that comprises at least one measuring head including at least one permanent magnet and at least one giant magneto resistance sensor chip. The applied element is detected with the measuring head and, based thereon, a magnetic image is generated of the condition of the element. | 04-12-2012 |
20120086448 | AMPLIFYING DRIVING UNIT USING GIANT MAGNETO RESISTANCE SENSOR AND DIAGNOSIS DEVICE USING THE SAME - The present invention relates to an amplifying unit comprising: a pull up down unit pulling up or pulling down a positive GMR signal and a negative GMR signal provide by a GMR sensor; a GMR amplifying unit including a plurality of amplifying units generating a GMR signal by amplifying a difference between the stand-alone type signal and the negative GMR signal according to the GMR sensor; a low pass filtering unit attenuating noise of the GMR signal; a reference converting unit generating a reference voltage having a predetermined range for generating a GMR signal; and a gain converting unit amplifying the GMR signals inputted to the plurality of amplifying units by several ten or hundred times. | 04-12-2012 |
20120098533 | XMR SENSORS WITH REDUCED DISCONTINUITIES - Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance. | 04-26-2012 |
20120098534 | MAGNETOELECTRONIC COMPONENTS AND MEASUREMENT METHOD - Magnetoelectronic components comprise at least one oblong working structure made of a ferromagnetic material, along which magnetic domain walls can migrate, means for applying an electric current to this working structure, and at least one magnetic field sensor for the magnetic field generated by the working structure. The working structure is designed so that it is able to form domain walls, the transverse magnetization direction of which in the center has no preferred direction in the plane perpendicular to the migration direction thereof along the working structure, and/or can form massless domain walls. It was found that the kinetic energy of such moving domain walls vanishes. These walls are thus not subject to the Walker limit nor to intrinsic pinning. As a result, the components can read, store or process and finally output information more quickly. The invention also relates to a method for measuring the non-adiabatic spin transfer parameter β of a ferromagnetic material. This method was developed as part of a more in-depth examination of the phenomena that were found. | 04-26-2012 |
20120105058 | MAGNETIC FIELD SENSING - An apparatus for magnetic field sensing, the apparatus comprising a graphitic material to exhibit a change in magneto-resistance (MR) in response to a sensed magnetic field, and a circuit in communication with the graphitic material, the circuit to receive an input from the graphitic material, the input being indicative of the MR change, and generate data corresponding to an angle of incidence for the magnetic field in response to the received input. Also disclosed is a method for magnetic field sensing, the method comprising positioning a graphitic material to sense a magnetic field, the graphitic material exhibiting a change in magneto-resistance (MR) in response to the magnetic field, and generating data corresponding to an angle of incidence for the magnetic field based on the MR change. | 05-03-2012 |
20120112741 | METHOD FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC SENSOR, ROTATION-ANGLE DETECTION DEVICE - To provide a method which can define the direction and orientation of magnetization of a pinned layer while reducing the number of steps of forming a GMR film. The magnetization direction of the pinned layer is defined in a plurality of directions by forming a plurality of patterns having directivities. Further, when the magneto-resistive effect film is formed, a magnetic field is applied in a direction at an angle set between the angles of the plurality of patterns. | 05-10-2012 |
20120112742 | SPEED SENSOR - A speed sensor having a sensor housing for accommodating a magnetic field sensor element, an adapter for holding the sensor housing and a magnetic encoder. The invention provides for the speed sensor to have a device for length adaptation or air gap adjustment, and for the device to have a clamping mechanism for holding the sensor housing. | 05-10-2012 |
20120119735 | XMR SENSORS WITH HIGH SHAPE ANISOTROPY - Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer. | 05-17-2012 |
20120119736 | Automated Teller Machine and Medium Detecting Device - A medium detecting device is provided. The medium detecting device includes a sensor adapted to detect magnetism of a medium being transferred; and a pressing unit adapted to press the medium toward the sensor, and the pressing unit includes at least one supporting part including a plurality of supporters to press the medium toward the sensor; and an elastic member adapted to elastically support the supporting part. | 05-17-2012 |
20120126805 | Current Sensor - Embodiments of the invention provide a current sensor including a conductive element and at least two magnetic field sensors. The conductive element includes at least three terminal areas and a common conductive area, wherein each of the at least three terminal areas is connected to the common conductive area to guide a current applied to the respective terminal area into the common conductive area. The at least two magnetic field sensors are arranged at different geometric positions adjacent to the common conductive area, wherein each of the at least two magnetic field sensors is configured to sense a magnetic field component of each current flowing into the common conductive area to provide a sensor signal based on the sensed magnetic field component. | 05-24-2012 |
20120126806 | XMR ANGLE SENSORS - Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions. | 05-24-2012 |
20120126807 | TRANSPORT AND DETECTION OF SUPERPARAMAGNETIC PARTICLES BY NANOWIRE - An apparatus, method and computer-readable medium configured to transport a constituent of fluid sample that binds to a functionalized magnetic particle. The apparatus includes a substrate connected to an input port, a magnetic nanowire, and either a temporally changing magnetic field generator or a spin-polarized current source. The magnetic nanowire is disposed in a surface of the substrate. The width and thickness of the magnetic nanowire are configured so that a domain wall propagating along the nanowire in response to the temporally changing magnetic field continuously couples to a superparamagnetic particle introduced into the input port. | 05-24-2012 |
20120139535 | Magnetic Sensor - The present invention relates to a magnetic sensor that provides the sensitivity adjustment on a wafer and that has a superior mass productiveness and a small characteristic variation. The magnetic sensor includes a magnetic sensitive portion provided on a substrate that is made of a compound semiconductor and that has a cross-shaped pattern. This magnetic sensitive portion includes input terminals and output terminals. At least one of input terminals of the input terminal is series-connected to a trimming portion having a compound semiconductor via a connection electrode. By performing laser trimming on the trimming portion series-connected via the connection electrode to the magnetic sensitive portion while performing a wafer probing (electric test), the adjustment of the constant voltage sensitivity is provided. | 06-07-2012 |
20120146633 | METHOD FOR MEASURING RESISTANCE OF RESISTOR CONNECTED WITH MR ELEMENT IN PARALLEL - A measuring method measuring a resistance of a resistor of a magnetic sensor that includes the resistor is provided. The method includes a step of measuring an output voltage of the magnetic sensor in an AC magnetic field, a step of measuring a first combined resistance of the MR element and the resistor in no magnetic field, a step of measuring a second combined resistance of the MR element and the resistor in a constant magnetic field of which a direction and strength are substantially the same as a magnetic field, a step of measuring a third combined resistance of the MR element and the resistor in another constant magnetic field of which a direction and strength are substantially the same as another magnetic field, and a step of calculating the resistance of the resistor based on the output voltage, the first, second and third combined resistance. | 06-14-2012 |
20120153946 | Magnetic Field Sensor - A sensor circuit is configured for operation under conditions susceptible to misalignment or movement. In connection with various example embodiments, an alignment-tolerant sensor arrangement includes a reference component and first and second magnetic sensors. The reference component influences a magnetic field as a function of a position of the reference component, such as via the positioning of a magnetic type of component. The first magnetic sensor is aligned with a first magnetic field sensitivity direction, and exhibits an electrical response to the presence of the magnetic field. The second magnetic sensor is aligned with a first magnetic field sensitivity direction and is configured to exhibit an electrical response to the presence of the magnetic field. The first and second magnetic field sensitivity directions being offset from one another to facilitate detection of magnetic fields at different relative alignments between the reference component and the first and second magnetic sensors. | 06-21-2012 |
20120153947 | MAGNETORESISTIVE ANGLE SENSORS - Magnetoresistive angle sensors, sensor systems and methods are disclosed. In an embodiment, a magnetoresistive angle sensor includes a first plurality of conductors arranged in parallel with one another in a first plane to form a first array; a second plurality of conductors arranged in parallel with one another in a second plane to form a second array, the second plane being different from and spaced apart from the first plane, and the second plurality of conductors being orthogonally arranged with respect to the first plurality of conductors; and at least one magnetoresistive element disposed between the first plane and the second plane. | 06-21-2012 |
20120161759 | MAGNETORESISTIVE SENSOR WITH REDUCED PARASITIC CAPACITANCE, AND METHOD - A magnetic-field sensor adapted to detect an external magnetic field, comprising: a first chip, including a first magnetoresistive structure for detection of the external magnetic field, the first magnetoresistive detection structure including an electrical-contact pad and magnetoresistive means; and a second chip housing an integrated electronic circuit and a magnetic-field generator, the first and second chips being mutually arranged in such a way that the integrated electronic circuit can be electrically coupled to the electrical-contact pad of the magnetoresistive structure and in such a way that the magnetic-field generator can be magnetically coupled to the magnetoresistive structure. | 06-28-2012 |
20120169330 | MAGNETORESISTANCE SENSOR AND FABRICATING METHOD THEREOF - An apparatus of a magnetoresistance sensor consisting of a substrate, a conductive unit on the substrate, and a magnetoresistance structure on the conductive unit is provided. The conductive unit includes a first surface and a second surface opposite to each other, and the first surface faces the substrate. The magnetoresistance structure is formed on the second surface of the conductive unit and is electrically connected to the conductive unit. The magnetoresistance sensor has high performance and reliability. A magnetoresistance sensor fabricating method based on this apparatus is also provided. | 07-05-2012 |
20120169331 | GMR Sensor Stripe for a Biosensor with Enhanced Sensitivity - A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced. | 07-05-2012 |
20120169332 | GMR Biosensor with Enhanced Sensitivity - A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced. | 07-05-2012 |
20120176129 | MICROMACHINED RESONANT MAGNETIC FIELD SENSORS - A micromachined magnetic field sensor is disclosed. The micromachined magnetic field sensor comprises a substrate; and a drive subsystem partially supported by the substrate with a plurality of beams, and at least one anchor; a mechanism for providing an electrical current through the drive subsystem along a first axis; and Lorentz force acting on the drive subsystem along a second axis in response to a magnetic field vector along a third axis. The micromachined magnetic field sensor also includes a position transducer to detect the motion of the drive subsystem and an electrostatic offset cancellation mechanism coupled to the drive subsystem. | 07-12-2012 |
20120194180 | Magnetoresistive Device and Method for Manufacturing the Same - A magnetoresistive device includes a carrier, an xMR-sensor, a magnetic layer formed above an active xMR-region of the xMR-sensor and an insulating layer arranged between the xMR-sensor and the magnetic layer. | 08-02-2012 |
20120194181 | MAGNETIC SENSOR, MAGNETIC SENSOR DRIVING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM - A magnetic sensor includes: a pulse generation circuit that generates a pulse having a pulse width shorter than the power-on time of an intermittent power supply signal from an external intermittent power supply; a magneto-electric conversion element; and a switch that controls, based on the pulse, a signal application time of the intermittent power supply signal to the magneto-electric conversion element within the power-on time. The magneto-electric conversion element is, for example, an MR element that outputs two detection signals, magnitude relation between signal levels of the two detection signals changing by field intensity of an external magnetic field. The magnetic sensor may further include an amplifier that amplifies the two detection signals and a comparator that compares the two amplified detection signals. | 08-02-2012 |
20120194182 | METHOD FOR PRODUCTION OF A MAGNETIC SENSOR ELEMENT - A method is provided for producing a magnetic sensor element, the magnetic sensor element having at least one magnetic pathway that extends along a displacement path and that has a plurality of magnetic north-south transitions, as well as at least one magnetic sensor mounted so as to be movable relative to the magnetic pathway. At least one of the magnetic north-south transitions is defined as a critical north-south transition whose position is to be detected with a specified degree of precision. Adjacent to the critical north-south transition are situated magnetic poles having identical polarity. | 08-02-2012 |
20120200291 | NON-CONTACT CURRENT AND VOLTAGE SENSOR - A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage. | 08-09-2012 |
20120200292 | MAGNETIC SENSOR - A magnetic sensor includes magnetoresistive elements and a soft magnetic body. The magnetoresistive elements have multi layers including a magnetic layer and a nonmagnetic layer on a substrate, and exert a magnetoresistance effect. The soft magnetic body is electrically disconnected with the magnetoresistive elements, and converts a vertical magnetic field component from the outside into a magnetic field component in a horizontal direction so as to provide the magnetoresistive elements with the horizontally converted magnetic field component. The magnetoresistive elements have a pinned magnetic layer having a fixed magnetization direction and a free magnetic layer having a variable magnetization direction. The free magnetic layer is stacked on the pinned magnetic layer with a nonmagnetic layer interposed between the free magnetic layer and the pinned magnetic layer. The magnetization directions of the pinned magnetic layers of the magnetoresistive elements are the same direction. The magnetoresistive elements form a bridge circuit. | 08-09-2012 |
20120200293 | NON-CONTACT CURRENT AND VOLTAGE SENSING METHOD - A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage. | 08-09-2012 |
20120206137 | MONOLITHIC TRI-AXIS AMR SENSOR AND MANUFACTURING METHOD THEREOF - A monolithic tri-axis anisotropic magnetoresistive (AMR) sensor and the method of manufacturing of the AMR sensor are presented. In one embodiment, the monolithic tri-axis AMR sensor includes (a) a substrate, (b) a first horizontal direction sensor disposed on the substrate, (c) a second horizontal direction sensor disposed on the substrate, (d) a third horizontal direction sensor disposed on the substrate, and (e) a flux concentrator disposed on the third horizontal direction sensor, wherein the flux concentrator is in cooperation with the third horizontal direction sensor to realize a function of a Z-axis sensor, such that the Z-axis direction can be effectively measured. The integration of the tri-axis AMR sensor is therefore accomplished. In addition, the integrated tri-axis AMR sensor has low production cost and improved reliability. | 08-16-2012 |
20120212217 | APPARATUS AND METHOD FOR SEQUENTIALLY RESETTING ELEMENTS OF A MAGNETIC SENSOR ARRAY - A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration. prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio. | 08-23-2012 |
20120212218 | MAGNETORESISTIVE SENSOR - A magnetoresistive sensor is provided. Specifically, multiple layers of or single layer of conductor line are formed at the same level as an insulating layer on a substrate as a bottom conductive layer. A magnetoresistive structure is formed on the bottom conductive layer and has opposite first surface and second surface. The second surface faces toward the substrate and is contacted with the bottom conductive layer. Afterward, another insulating layer is formed on the first surface, a slot is formed at the same level as the another insulating layer and a conductor line is formed in the slot and contacted with the first surface, so that one layer or multiple layers of conductor line can be formed as a top conductive layer. A lengthwise extending direction of each of the bottom and top conductor layers is intersected a lengthwise extending direction of the magnetoresistive structure with an angle. | 08-23-2012 |
20120212219 | MAGNETIC SENSOR AND MANUFACTURING METHOD THEREOF - For each of electric current path units each including series-connected resistor elements, one end is electrically connected with power supply terminal Vcc, the other end is electrically connected with ground terminal GND, and connection portion between the resistor elements is electrically connected with output terminals Vo | 08-23-2012 |
20120217960 | 3-D MAGNETIC SENSOR - One embodiment of the present invention relates to a magnetic field sensor comprising a squat soft-magnetic body disposed on a surface of a substrate comprising a magnetic sensor array having a plurality of spatially diverse magnetic sensor elements disposed in a predetermined configuration. In the presence of an external magnetic field the squat soft-magnetic body becomes magnetized to generate a reactionary magnetic field. The plurality of magnetic sensor elements are respectively configured to measure a magnetic field value of a superposition of the external magnetic field and the reactionary magnetic field along a first axis (e.g., a z-axis), resulting in a plurality of spatially diverse measurements of the magnetic field component along the first axis. The plurality of spatially diverse measurements may be used to compute magnetic field components of the external magnetic field along a plurality of axes (e.g., x-axis, y-axis, and z-axis). | 08-30-2012 |
20120217961 | MAGNETIC SENSOR - A magnetic sensor includes a plurality of magnetoresistance effect elements and soft magnetic bodies. Each of the magnetoresistance effect elements is formed by stacking a magnetic layer and a non-magnetic layer on a substrate so as to exhibit a magnetoresistance effect. The magnetoresistance effect element is configured such that element portions and electrode layers are alternately disposed. A soft magnetic body is disposed on one and the other sides of each of the element portions in the Y direction, and the soft magnetic bodies are displaced from each other in the X direction. With this arrangement, an external magnetic field applied in the X1 direction is changed into an external magnetic field in the Y direction when passing through the soft magnetic bodies, and the changed external magnetic field flows into the element portions. | 08-30-2012 |
20120217962 | MAGNETIC SENSOR AND MANUFACTURING METHOD THEREFOR - A magnetic sensor having no sensitivity differences between sensitivity axes, and an easy manufacturing method therefor are provided. The method includes a process of forming first stacked films for a magnetoresistive element on a substrate. This element has a sensitivity axis in a certain direction and includes a self-pinned ferromagnetic pinned layer in which first and second ferromagnetic films are antiferromagnetically coupled through an antiparallel coupling layer, a nonmagnetic intermediate layer, and a soft magnetic free layer. The method further includes a process of removing a region of the first stacked films from the substrate. The remaining region of the films includes at least a region to be left to form the element. The method furthermore includes a process of forming second stacked films for a magnetoresistive element, which has a sensitivity axis in a direction different from the certain direction and has the same structure, on the exposed substrate. | 08-30-2012 |
20120229133 | Integrated Lateral Short Circuit for a Beneficial Modification of Current Distribution Structure for xMR Magnetoresistive Sensors - The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device. | 09-13-2012 |
20120262164 | MAGNETO-RESISTIVE SENSOR FOR MEASURING MAGNETIC FIELDS - Magneto-resistive sensors based on the AMR or GMR effect exhibit substantially enlarged linear characteristic curve regions as a result of the fact that their resistances are composed of magneto-resistive layer strips of differing anisotropic forms. Differing anisotropic forms can be achieved by different strip widths, strip thicknesses, strip intervals or strip materials. The temperature compensation for the output voltage of the magneto-resistive sensors, at least at one point on the characteristic curve, is achieved by the series connection of an additional layer strip with a temperature coefficient that differs from that of the magneto-resistive material to at least one magneto-resistive resistance of the sensor. | 10-18-2012 |
20120293170 | MAGNETIC FIELD DETECTION DEVICE AND CURRENT SENSOR - Provided is a magnetic field detection device and a current sensor capable of increasing the degree of freedom in selecting the type of the magnetic field detection element. | 11-22-2012 |
20120299589 | ELECTRIC CURRENT DETECTOR AND CORE COMPONENT USED THEREFOR - In an electric current detector according to the present invention, an annular core | 11-29-2012 |
20120306487 | ELECTRICAL CURRENT SENSING CIRCUIT, PRINTED CIRCUIT BOARD ASSEMBLY AND ELECTRICAL CURRENT SENSOR DEVICE WITH THE SAME - An electrical current sensing circuit of the present invention comprises a Wheatstone bridge circuit having at least four magnetoresistive elements connecting and a pair of output terminals, the magnetoresistive elements adapted for sensing an external magnetic field with a first direction generated by a carrying-current electrical conductor, and outputting a differential signal; and a negative feedback circuit connecting with the output terminals, actuated by the differential signal and generated a magnetic field with a second direction that is opposite to the first direction, thereby decreasing the impact of the temperature drift to the magnetoresistive element character. The present invention can eliminate the temperature drift under a changing environment and, in turn obtain an accurate output voltage. | 12-06-2012 |
20120306488 | SPIN-VALVE MAGNETORESISTANCE STRUCTURE AND SPIN-VALVE MAGNETORESISTANCE SENSOR - A spin-valve magnetoresistance structure includes a first magnetoresistance layer having a fixed first magnetization direction, a second magnetoresistance layer disposed on a side of the first magnetoresistance layer and having a variable second magnetization direction, and a spacer disposed between the first magnetoresistance layer and the second magnetoresistance layer. The second magnetization direction is at an angle in a range from 30 to 60 degrees or from 120 to 150 degrees to the first magnetization direction when the intensity of an applied external magnetic field is zero. The second magnetization direction varies with the external magnetic field thereby changing an electrical resistance of the spin-valve magnetoresistance structure. A spin-valve magnetoresistance sensor based on the spin-valve magnetoresistance structure is also provided. | 12-06-2012 |
20120306489 | MAGNETIC SENSOR AND PATTERN FOR MAGNETIC SENSOR - A magnetic sensor includes a substrate, and a pattern forming region on the substrate, the pattern forming region having a substantially quadrangle shape. The pattern forming region includes a magnetic detection element pattern that includes a plurality of linear parts arranged parallel to each other at a predetermined inclination angle to two sides of the quadrangle shape, and a plurality of turning parts configured to alternately connect both end portions in a longitudinal direction of adjacent linear parts of the plurality of linear parts. The magnetic detection element pattern further includes a first pattern, and a second pattern with a resistance change ratio less than the first pattern. An area of the magnetic detection element pattern is less than an area of the pattern forming region in a plane view. | 12-06-2012 |
20120306490 | MAGNETIC SENSOR AND MANUFACTURING METHOD OF THE SAME - A manufacturing method of a magnetic sensor, detecting a physical amount based on a resistance change in each MRE while applying an external magnetic field to MREs, includes: preparing a substrate; forming MREs, including a free magnetic layer having a changeable magnetization direction and a pin magnetic layer having a fixed magnetization direction, above the substrate; forming heaters corresponding to MREs; arranging the substrate in the external magnetic field having a magnetic field direction in a first direction parallel to the substrate; and heating with one portion of the heater portions and magnetizing one portion of the pin magnetic layers in the first direction; and arranging the substrate in another external magnetic field having another magnetic field direction in a second direction different from the first direction; and heating with another portion of the heater portions and magnetizing another portion of the pin magnetic layers in the second direction. | 12-06-2012 |
20120306491 | MAGNETIC BALANCE TYPE CURRENT SENSOR - A magnetic balance type current sensor of the present invention includes a magnetic field detection bridge circuit including four magnetoresistance effect elements whose resistance values change owing to application of an induction magnetic field from a current to be measured. Each of the four magnetoresistance effect elements includes a ferromagnetic fixed layer formed by causing a first ferromagnetic film and a second ferromagnetic film to be antiferromagnetically coupled to each other via an antiparallel coupling film, a non-magnetic intermediate layer, and a soft magnetic free layer. The first and second ferromagnetic films are approximately equal in Curie temperature to each other, a difference in magnetization amount therebetween is substantially zero, and the magnetization directions of the ferromagnetic fixed layers of three magnetoresistance effect elements are different by 180 degrees from the magnetization direction of the ferromagnetic fixed layer of the remaining one magnetoresistance effect element. | 12-06-2012 |
20120313636 | HYSTERESIS OFFSET CANCELLATION FOR MAGNETIC SENSORS - Presented is a sensor that includes a magnetoresistive (MR) sensing device to sense a magnetic field and to produce an AC signal voltage proportional to the sensed magnetic field. The sensor also includes circuitry, coupled to the MR sensing device, to remove DC offset from the AC signal voltage. The DC offset may be related to the hysteresis characteristics of the MR sensing device. To remove DC offset, the circuitry may obtain an averaged DC offset and subtract the averaged DC offset from the AC signal voltage to produce a sensor output signal. | 12-13-2012 |
20120319682 | INTEGRATED CIRCUIT INCLUDING SENSOR HAVING INJECTION MOLDED MAGNETIC MATERIAL - An integrated circuit includes a magnetic field sensor and an injection molded magnetic material enclosing at least a portion of the magnetic field sensor. | 12-20-2012 |
20120326711 | TOROIDAL CONDUCTIVITY PROBE WITH INTEGRATED CIRCUITRY - An apparatus and process for making noncontact measurements of liquid conductivity are disclosed. This apparatus forms a conductivity cell and uses two toroids, one to generate a magnetic field and another to sense the magnetic field, placed in an enclosure which allows liquid to pass through it for measurement. Ground planes constructed preferably of printed circuit boards with conductive layers are used to reduce capacitive coupling between the toroids and provide better shielding. Circuitry on or near these circuit boards are used to convert local, low level signals from a sensing toroid to signals which can be more readily passed to and from a recording system or operator without degradation. Sensors on or near these circuit boards can be used to sense environmental conditions in order to improve operation and stability of the conductivity cell. Methods and apparatus for increasing circuit sensitivity and calibrating the sensor are also disclosed. | 12-27-2012 |
20120326712 | Method and apparatus for measuring magnetic parameters of magnetic thin film structures - High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers. | 12-27-2012 |
20120326713 | XMR ANGLE SENSORS - Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized. | 12-27-2012 |
20120326714 | METHOD FOR THE PRODUCTION OF PRINTED MAGNETIC FUNCTIONAL ELEMENTS FOR RESISTIVE SENSORS AND PRINTED MAGNETIC FUNCTIONAL ELEMENTS - A method for producing printed magnetic functional elements for resistance sensors and printed magnetic functional elements. The invention refers to the field of electronics and relates to a method for producing resistance sensors, such as can be used, for example, in magnetic data storage for read sensors or in the automobile industry. The disclosure includes a simple and cost-effective production method and to obtain such printed magnetic functional elements with properties that can be adjusted as desire, in which a magnetic material is deposited onto a substrate as a film, is removed from the substrate and divided into several components and these components are applied on a substrate by means of printing technologies. Aspects are also directed to a printed magnetic functional element for resistance sensors of several components of a film, wherein at least 5% of the components of the functional element have a magnetoimpedance effect. | 12-27-2012 |
20120326715 | MAGNETIC SENSOR AND MAGNETIC BALANCE TYPE CURRENT SENSOR UTILIZING SAME - A magnetism sensor comprises a magnetoresistive element, the resistance of which changes due to the application of an induced magnetic field from the current being measured, and a fixed-resistance element. The fixed-resistance element has a self-pinned ferromagnetic fixed layer comprising a first ferromagnetic film and a second ferromagnetic film coupled antiferromagnetically with an antiparallel coupling film interposed therebetween. The antiparallel coupling film is a ruthenium film that exhibits an antiferromagnetic coupling effect with a first peak thickness. The difference between the degrees of magnetization of the first ferromagnetic film and the second ferromagnetic film is effectively zero. | 12-27-2012 |
20130009636 | Magnetic Sensor Characterization - Apparatuses, methods and systems of a magnetic sensor self-characterizing its magnetic properties are disclosed. One embodiment of the magnetic sensor apparatus includes a magnetic sensor and a current source for applying a current to the magnetic sensor. The magnetic sensor apparatus further includes control circuitry configured to control the current source, and characterize a magnetic property of the magnetic sensor based on the applied current. One method of a magnetic sensor self-characterizing its magnetic properties includes applying, by the magnetic sensor, an electrical signal, and characterizing a magnetic property of the magnetic sensor based on the applied electrical signal. | 01-10-2013 |
20130009637 | MAGNETORESISTANCE ELEMENT AND MAGNETIC SENSOR USING THE SAME - To decrease the power consumption of an MR element. The MR element includes a substrate and a magnetoresistance film provided on the substrate. The MR film is in a shape in which a straight line bent in a zigzag form is further bent in a multiple zigzag form. The straight line forms a plurality of configuration parts. Each of the configuration parts is in a form in which a plurality of rectangles in parallel to each other are connected in series in a zigzag form, and the configuration parts are connected to each other in series in a zigzag form. | 01-10-2013 |
20130027031 | Enhanced Magnetic Sensor Biasing Yoke - An apparatus and associated method are generally directed to a magnetic sensor. A sensor may have a stack with an air bearing surface (ABS) and a biasing surface opposite the ABS. A biasing yoke can be disposed between a biasing magnet and the stack with the biasing magnet having a lower magnet moment than the biasing yoke. | 01-31-2013 |
20130027032 | Partial Magnetic Biasing of Magnetoresistive Sensor - Various embodiments can be generally directed to a magnetoresistive stack with a first stripe height and a biasing magnet positioned adjacent the magnetoresistive stack. The biasing magnet can have a second stripe height that is less than the first stripe height. The first and second stripe heights may correspond to a minimum signal to noise ratio in the magnetoresistive stack. | 01-31-2013 |
20130033260 | CURRENT SENSOR - A current sensor includes a pair of magnetic balance sensors and a switching circuit. The magnetic balance sensors each include a magnetic sensor element and a feedback coil. The magnetic sensor element varies in characteristics due to an induction field caused by measurement current. The feedback coil is disposed near the magnetic sensor element and produces a canceling magnetic field canceling out the induction field. Each of the magnetic balance sensors outputs, as a sensor output, a value corresponding to current flowing through the feedback coil when a balanced state in which the induction field and the canceling magnetic field cancel each other out is reached after the feedback coil is energized. The switching circuit turns on/off one of the magnetic balance sensors. | 02-07-2013 |
20130049749 | Semiconductor Fluxgate Magnetometer - A fluxgate magnetometer is formed in a semiconductor wafer fabrication sequence, which significantly reduces the size and cost of the fluxgate magnetometer. The semiconductor wafer fabrication sequence attaches a die, which has drive and sense circuits, to the bottom surface of a cavity formed in a larger structure, and forms drive and sense coils around a magnetic core structure on the top surface of the larger structure. | 02-28-2013 |
20130049750 | Giant Magnetoresistance Current Sensor - A giant magnetoresistance current sensor comprises an amorphous alloy magnetic ring having an air gap; a DC magnetic bias coil wound onto the amorphous alloy magnetic ring; a DC constant current source supplying power for the DC magnetic bias coil; a giant magnetoresistance chip disposed in the air gap and having positive and negative outputs; an instrument amplifier having a non-inverting input connected to the positive output of the giant magnetoresistance chip, and an inverting input connected to the negative output of the giant magnetoresistance chip; an operational amplifier having a non-inverting input connected to an output of the instrument amplifier; a voltage following resistance connected between an inverting input and an output of the operational amplifier; an analog to digital converter having an input connected to the output of the operational amplifier; and a digital tube display connected to an output of the analog to digital converter. | 02-28-2013 |
20130057272 | CURRENT SENSOR ARRANGEMENT - Current sensor comprising a primary conductor for conducting a current that is to be measured, at least two magnetic field probes for measuring magnetic fields, and a magnetic core, which has a closed ring structure that encloses the primary conductor and at least two recesses that in each case receive one of the magnetic field probes. | 03-07-2013 |
20130057273 | CURRENT SENSOR - A current sensor includes a magnetoresistive element and magnetic shields arranged between a current line and the magnetoresistive element. The magnetic shields include a flat first magnetic shield placed so as to attenuate the strength of an induction magnetic field applied to the magnetoresistive element and a flat second magnetic shield placed apart from the first magnetic shield in a direction in-plane with the main surface of the first magnetic shield so as to attenuate the strength of the induction magnetic field applied to the magnetoresistive element and reduce the influence of residual magnetization in the first magnetic shield. | 03-07-2013 |
20130057274 | CURRENT SENSOR - A current sensor includes a magnetoresistance effect element in which a plurality of magnetic detecting portions and a plurality of permanent magnet portions are alternately arranged so as to be in contact with each other. Each magnetic detecting portion is configured to include a ferromagnetic fixed layer whose magnetization direction is substantially fixed and a free magnetic layer whose magnetization direction changes with respect to an external magnetic field. Each permanent magnet portion is configured to include a hard bias layer applying a bias magnetic field to the free magnetic layer. An interval between the adjacent permanent magnet portions is 20 μm to 100 μm. | 03-07-2013 |
20130057275 | CURRENT SENSOR - A current sensor includes a magnetic balance sensor including a feedback coil that is disposed in the vicinity of a magnetic sensor element whose characteristics are changed by an inducted magnetic field from a current to be measured and generates a cancellation magnetic field for offsetting the inducted magnetic field, a shunt resistant that is connected in series with a current line for circulating the current to be measured, and a switch circuit that switches to magnetic balance detection at the time of a small current and switches to shunt resistance detection at the time of a large current. | 03-07-2013 |
20130082697 | MAGNETORESISTANCE SENSING DEVICE AND MAGNETORESISTANCE SENSOR INCLUDING SAME - A magnetoresistance sensing device includes a substrate, a magnetoresistance sensing unit, and a magnetic field adjusting unit. In response to a first external magnetic field horizontal to a surface of the substrate, the magnetoresistance sensing unit results in a change of an electrical resistance. The magnetic field adjusting unit is used for changing a direction of a second external magnetic field vertical to the surface of the substrate to be consistent with the first external magnetic field, so that the magnetoresistance sensing unit results in a change of the electrical resistance in response to the second external magnetic field. A magnetoresistance sensor includes four magnetoresistance sensing devices, which are arranged in a Wheatstone bridge. An output voltage of the Wheatstone bridge is not altered as the first external magnetic field is changed, but the output voltage of the Wheatstone bridge is altered as the second external magnetic field is changed. | 04-04-2013 |
20130082698 | CURRENT SENSOR - A current sensor includes a magnetic sensor including magnetoresistive sensors configured to detect induction fields generated by a measurement current passing through a current line, a magnetic field application unit configured to apply to the magnetoresistive sensors a magnetic field having a direction perpendicular to sensitivity directions of the magnetoresistive sensors; and a computing unit configured to calculate from an output of the magnetic sensor a compensation value for the output. The computing unit is configured to be capable of calculating the compensation value from the outputs of the magnetic sensor obtained in at least two states in which magnetic fields applied by the magnetic field application unit are different from each other. | 04-04-2013 |
20130082699 | Magnatoresistive Sensing Component and Agnatoresistive Sensing Device - A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer. | 04-04-2013 |
20130099783 | DUAL-AXIS ANISOTROPIC MAGNETORESISTIVE SENSORS - An integrated dual-axis anisotropic magnetoresistive sensor can include first and second sensor units. A resistor bridge of the first sensor unit can include a plurality of magnetoresistors, each having at least one strip of anisotropic magnetoresistive material with a longitudinal axis substantially parallel to the technological anisotropy axis of the material. A resistor bridge of the second sensor unit can include a plurality of magnetoresistors having a plurality of strips of the anisotropic magnetoresistive material, the plurality of strips including a first subset having longitudinal axes aligned at a first angle to the technological anisotropy axis and a second subset having longitudinal axes aligned at a second angle to the technological anisotropy axis. The second angle can have the same magnitude as the first, but be rotated in an opposite direction from the technological anisotropy axis. | 04-25-2013 |
20130106411 | MAGNETOSTRICTIVE POSITION TRANSDUCER AND MAGNETOSTRICTIVE SENSING ELEMENT THEREOF | 05-02-2013 |
20130106412 | ELECTRICAL CURRENT SENSOR | 05-02-2013 |
20130113477 | CURRENT SENSORS - Embodiments relate to magnetic field current sensors having sensor elements for sensing at least two magnetic field components, for example Bx and By. The current in a conductor is estimated by Bx and Bx/By, wherein Bx is the primary measurement and Bx/By is a corrective term used to account for position tolerances between the sensor and the conductor. In other embodiments, the corrective term can be dBx/By, where dBx is a difference in between components sensed at different sensor elements. The particular field components can vary in embodiments; for example, the current can be estimated by By and By/Bx, or dBy/Bx or some other arrangement | 05-09-2013 |
20130113478 | METHOD OF USING A MAGNETORESISTIVE SENSOR IN SECOND HARMONIC DETECTION MODE FOR SENSING WEAK MAGNETIC FIELDS - A method to measure a magnetic field is provided. The method includes applying an alternating drive current to a drive strap overlaying a magnetoresistive sensor to shift an operating point of the magnetoresistive sensor to a low noise region. An alternating magnetic drive field is generated in the magnetoresistive sensor by the alternating drive current. When the magnetic field to be measured is superimposed on the alternating magnetic drive field in the magnetoresistive sensor, the method further comprises extracting a second harmonic component of an output of the magnetoresistive sensor. The magnetic field to be measured is proportional to a signed amplitude of the extracted second harmonic component. | 05-09-2013 |
20130119980 | MAGNETIC SENSOR DEVICE - By providing a first magnet and a second magnet on wall surfaces of a hollow section where paper money is conveyed such that different magnetic poles face each other, a gradient magnetic field is formed wherein both a magnetic field component in an opposing direction to the magnets and a magnetic field component in a conveyance direction of the paper money include a zero point. An AMR element is provided between the paper money and the first magnet. The AMR element is enclosed by a multi-layered substrate and covered with resin. The AMR element is provided in an area where the magnetic field intensity is weak, which is where the magnetic field intensity in the gradient magnetic field in the conveyance direction is near zero. The paper money passes through an area where the magnetic field intensity of the gradient magnetic field is strong. | 05-16-2013 |
20130127455 | MAGNETIC FIELD VECTOR SENSOR - A magnetic field vector sensor includes a substrate parallel to a plane, a support mobile relative to it and rotatable about a vertical rotation axis perpendicular to it, a magnetic field source generating a field having a moment in a non-perpendicular direction, the source being fixed to the support with no degree-of-freedom to exert torque on the support when a field to be measured is present, the field being non-collinear with the moment, a transducer to convert torque exerted on the support into a field amplitude of a component of the field along a measurement axis in the plane, wherein the source comprises a magnetostrictive permanent magnet for generating the field having a moment whose direction varies with stress on the magnet, and wherein the sensor further comprises a controllable device to reversibly modify the moment direction, and a stress generator to vary stress and hence moment direction. | 05-23-2013 |
20130127456 | MAGNETIC BALANCE TYPE CURRENT SENSOR - A magnetic balance type current sensor includes: a magnetic detection bridge circuit of which output varies due to an induced magnetic field from a current wire; a magnetic field attenuation unit that attenuates the induced magnetic field that acts on a magnetoresistive effect element; and a feedback coil which generates a cancel magnetic field that cancels the induced magnetic field in accordance with the output of the magnetic detection bridge circuit, and through which a current corresponding to the current to be measured flows when it enters a balanced state in which the cancel magnetic field and the induced magnetic field cancel each other, wherein the feedback coil is provided in such a manner that a direction of the cancel magnetic field that acts on the magnetic field attenuation unit is opposite to a direction of the induced magnetic field that acts on the magnetic field attenuation unit. | 05-23-2013 |
20130127457 | MAGNETIC SUBSTANCE DETECTION DEVICE - The invention is related to a magnetic substance detection device for detecting a magnetic substance, including: a magnetoresistive sensor arranged in the middle of a movement path of the magnetic substance; and a lower magnet in which a south pole and a north pole are arrayed along the movement direction of the magnetic substance; and a upper magnet in which a north pole and a south pole are arrayed along the movement direction of the magnetic substance. The lower and upper magnets are arranged with the movement path of the magnetic substance interposed so that the south pole of the lower magnet and the north pole of the upper magnet are opposed to each other, and the north pole of the lower magnet and the south pole of the upper magnet are opposed to each other, whereby the magnetic substance can be detected with high accuracy. | 05-23-2013 |
20130134969 | THREE-DIMENSIONAL MAGNETIC FIELD SENSOR AND METHOD OF PRODUCING SAME - A three-dimensional magnetic field sensor includes a substrate having an element placement surface that is planar, and first, second and third MR elements disposed on a side of the element placement surface of the substrate and integrated with the substrate. Each of the first, second and third MR elements includes a magnetization pinned layer, a nonmagnetic layer, and a free layer. The magnetization pinned layer of the first MR element has a magnetization direction that is pinned in an X direction parallel to the element placement surface. The magnetization pinned layer of the second MR element has a magnetization direction that is pinned in a Y direction parallel to the element placement surface and different from the X direction. The magnetization pinned layer of the third MR element has a magnetization direction that is pinned in a Z direction perpendicular to the element placement surface. | 05-30-2013 |
20130134970 | Integrated Magnetometer and its Manufacturing Process - Integrated magnetometer comprising a plurality of multilayer magnetoresistive sensors deposited on a surface, called the top surface, of a substantially planar substrate, characterized in that said top surface of the substrate has at least one cavity or protuberance provided with a plurality of inclined faces, and in that at least four said magnetoresistive sensors are placed on four said magnetoresistive sensors are placed on four said inclined faces, having different orientations and opposite one another in pairs, each sensor being sensitive to one component of an external magnetic field parallel to that face on which it is placed. Process for manufacturing such a magnetometer. | 05-30-2013 |
20130141089 | Semiconductor GMI Magnetometer - A giant magneto-impedance (GMI) magnetometer is formed in a semiconductor wafer fabrication sequence, which significantly reduces the size and cost of the GMI magnetometer. The semiconductor wafer fabrication sequence forms a magnetic conductor, a non-magnetic conductor that is wrapped around the magnetic conductor as a coil, and non-magnetic conductors that touch the opposite ends of the magnetic conductor. | 06-06-2013 |
20130141090 | MAGNETIC FIELD SENSING APPARATUS AND METHODS - Magnetic field sensor designs that provide both increased directionality and proximate coupling desirable for improved directionality and sensitivity and methods for fabricating them. | 06-06-2013 |
20130141091 | MAGNETIC FIELD SENSOR - A magnetic field sensor has a magnetoresistive rod having a stack of stacked layers that include a pinned layer having a fixed magnetization direction almost perpendicular to a longitudinal direction, a free layer comprising a magnetostrictive material having a coefficient of magnetostriction greater than 20 ppm to 25° C. and a longitudinal axis of easiest magnetization, the magnetization changing when the free layer is exposed to a magnetic field, a non-magnetic spacer layer interposed between the free and pinned layers to form a tunnel junction or spin valve, and a stress-generating layer for exerting uniaxial stress essentially such that a product of stress and magnetostriction coefficient is greater than 500 ppm·MPa at 25° C. The rod's length is at least ten times its greatest width. | 06-06-2013 |
20130147472 | Micro-Fabricated Atomic Magnetometer and Method of Forming the Magnetometer - The cost and size of an atomic magnetometer are reduced by attaching a vapor cell structure that has a vapor cell cavity to a base die that has a laser light source that outputs light to the vapor cell cavity, and attaching a photo detection die that has a photodiode to the vapor cell structure to detect light from the laser light source that passes through the vapor cell cavity. | 06-13-2013 |
20130147473 | DETECTION SYSTEM USING MAGNETIC RESISTANCE SENSOR - Provided is a detection system using a magnetic resistance sensor. The detection system includes a magnetic resistance sensor for detecting a magnetic element of a specimen containing a magnetic particle. An external magnetic-field application device applies external magnetic fields to the magnetic resistance sensor in first and second directions, and has a space for entrance or exit of a specimen holding unit. A horizontal drive module receives the specimen holding unit to horizontally move the specimen holding unit under the magnetic resistance sensor. A vertical drive module receives the magnetic resistance sensor to vertically move the magnetic resistance sensor to the specimen holding unit. | 06-13-2013 |
20130162246 | CURRENT DETECTING APPARATUS - In a current detecting apparatus, a container member includes a substrate fixing portion, a core inner-edge positioning portions, and a lid member. The substrate fixing portion is a portion formed at a position outside an outer edge of a magnetic core, and to which a first portion of a circuit board is fixed. Two of the core inner-edge positioning portions come into contact with the magnetic core, and come into contact with the circuit board. The first portion, the second portion, and the third portion surround a magnetoelectric device, such as a Hall element, that detects a magnetic flux in a gap portion of the magnetic core. The lid-side substrate holding portion, with the container-side substrate holding portion, holds the circuit board tightly. | 06-27-2013 |
20130176022 | MAGNETORESISTIVE SENSING DEVICE - A magnetoresistive sensing device includes a substrate, a magnetic layer, a first electrode and a second electrode. The substrate has a reference plane. The first electrode and a second electrode are disposed over the reference plane. The magnetic layer is disposed over the reference plane and has a magnetization direction. A non-straight angle is formed between the magnetic layer and the reference plane. The first electrode and the second electrode are electrically connected with each other through an electric pathway of the magnetic layer. An included angle is formed between the electric pathway and the magnetization direction. Consequently, the magnetoresistive sensing device is capable of measuring a magnetic field change in a Z-axis direction, which is perpendicular to a reference plane. | 07-11-2013 |
20130181704 | MAGNETIC SENSOR FOR IMPROVING HYSTERESIS AND LINEARITY - A magnetic sensor includes a non-bias structure element section that has a laminated structure in which a fixed magnetic layer, a non-magnetic material layer, a free magnetic layer, and a protection layer are laminated, and that is extended in an X1-X2 direction; and soft magnetic bodies that are arranged on the element section in a contactless manner. The soft magnetic bodies include a first section, a second section, and a third section. The second section is located on a Y2 side of the element section and the third section is located on a Y1 side thereof. The second section of one of soft magnetic bodies faces the third section of the other soft magnetic body in a Y1-Y2 direction through the element section. An electrode layer is provided on the element section which faces the joint sections of the second section and the third section in the Y1-Y2 direction. | 07-18-2013 |
20130181705 | MAGNETO-IMPEDANCE SENSOR ELEMENT AND METHOD FOR PRODUCING THE SAME - An MI sensor element | 07-18-2013 |
20130187645 | MAGNETORESISTOR INTEGRATED SENSOR FOR MEASURING VOLTAGE OR CURRENT, AND DIAGNOSTIC SYSTEM - The invention relates to an integrated sensor, including terminals ( | 07-25-2013 |
20130214776 | TUNNELING MAGNETO-RESISTIVE DEVICE WITH SET/RESET AND OFFSET STRAPS - A sensing device exhibits a tunneling magneto-resistive (TMR) effect, and changes electrical resistance in response to a magnetic field. A first current carrying conductor is positioned in proximity to the TMR sensing device, such that upon an application of a sufficient current, a magnetic field is generated. The magnetic field is sufficiently strong and properly oriented so as to cause a magnetization of a soft magnetic layer of the TMR sensing device, thereby causing a change of the TMR sensing device from one bi-stable state to another bi-stable state. | 08-22-2013 |
20130214777 | SEMICONDUCTOR INTEGRATED CIRCUIT, MAGNETIC DETECTING DEVICE, ELECTRONIC COMPASS, AND AMMETER - A semiconductor integrated circuit includes a clock-signal control circuit controlling intensity-signal output, which is output from a signal processing circuit, to be stopped in at least a forward outage time and a backward outage time. The forward outage time is previous to an apex point of a triangular wave and having 1 to 5% of a triangular wave period. The backward outage time is subsequent to the apex point of the triangular wave and having 1 to 5% of a triangular wave period. | 08-22-2013 |
20130214778 | APPARATUS AND METHOD FOR REDUCING A TRANSIENT SIGNAL IN A MAGNETIC FIELD SENSOR - A magnetic field sensor includes a compensation loop coupled in series with normal circuit couplings in order to reduce a transient signal that would otherwise be generated when the magnetic field sensor experiences a high rate of change of magnetic field. In some embodiments, the magnetic field sensor is a current sensor responsive to a magnetic field generated by a current-carrying conductor. | 08-22-2013 |
20130229175 | MAGNETIC FIELD SENSING METHODS AND MEGNETIC FIELD SENSING APPARATUSES USING TUNNELING MAGNETO-RESISTOR DEVICES - Magnetic field sensing method and apparatus of this disclosure uses two tunneling magneto-resistor (TMR) devices. Angles of the free magnetizations of the two TMR devices with respect to a fixed direction are set in a first to fourth period. In the first to fourth period, the two TMR devices act as a TMR sensing unit and a zero-field reference unit by turns, and each of the conductance difference between the sensing unit and the zero field reference unit is also obtained in each of the first to fourth period. Finally, the four conductance differences are summed up. | 09-05-2013 |
20130241542 | XMR MONOCELL SENSORS, SYSTEMS AND METHODS - Embodiments relate to magnetoresistive (xMR) sensors. In an embodiment, an xMR stack structure is configured to form two different xMR elements that can be coupled to form a locally differential Wheatstone bridge. The result is a highly sensitive magnetic sensor with small dimensions and robustness against thermal drift and sensor/encoder pitch mismatch that can be produced using standard processing equipment. Embodiments also relate to methods of forming and patterning the stack structure and sensors that provide information regarding direction in addition to speed. | 09-19-2013 |
20130241543 | SENSOR AND A METHOD OF MANUFACTURE OF A SENSOR - A method of manufacture of a sensor, the method comprising, in a first fabrication facility, forming one or more components of the sensor on a substrate; and in a second fabrication facility depositing a sensor layer, such as a magnetoresistive sensor, onto the substrate or over the one or more components. Otherwise contaminating effects of depositing magnetoresistive materials can thus be confined to the second fabrication facility, permitting more advanced fabrication equipment and techniques to be employed in the first fabrication facility. | 09-19-2013 |
20130241544 | FREQUENCY DOUBLING OF XMR SIGNALS - Embodiments relate to sensors, such as speed sensors and angle sensors, that use a modulated supply voltage to approximately double output signals of the sensors because the sensor element and the supply voltage exhibit the same frequency. In embodiments, the sensor element is an xMR element, and the modulated supply voltage is generated on-chip, such as by another xMR element. Direct frequency doubling of the output signal of the sensor element therefore can be obtained without additional and complex circuitry or signal processing. | 09-19-2013 |
20130241545 | MAGNETIC SENSOR - A magnetic sensor includes a plurality of magnetoresistive elements that are formed by stacking a magnetic layer and a non-magnetic layer on a substrate and that exhibit a magnetoresistive effect and a soft magnetic member that converts a vertical magnetic field component into a horizontal magnetic field component. The soft magnetic member is formed of a plurality of first and second soft magnetic portions respectively extending in an X1-X2 direction and a Y1-Y2 direction, combined together in the shape of a lattice. The magnetoresistive elements have a sensitivity direction in the Y2 direction and include a magnetoresistive element located on a Y1 side portion side of the first soft magnetic portion and a magnetoresistive element located on a Y2 side portion side of the first soft magnetic portion, respectively receiving horizontal magnetic field components from the Y1 direction and Y2 direction. | 09-19-2013 |
20130249544 | Magnetic Field Sensor Integrated Circuit with Integral Ferromagnetic Material - A magnetic field sensor includes a lead frame, a semiconductor die supporting a magnetic field sensing element, a non-conductive mold material enclosing the die and a portion of the lead frame, a ferromagnetic mold material secured to the non-conductive mold material and a securing mechanism to securely engage the mold materials. The ferromagnetic mold material may comprise a soft ferromagnetic material to form a concentrator or a hard ferromagnetic material to form a bias magnet. The ferromagnetic mold material may be tapered and includes a non-contiguous central region, as may be an aperture or may contain the non-conductive mold material or an overmold material. Further embodiments include die up, lead on chip, and flip-chip arrangements, wafer level techniques to form the concentrator or bias magnet, integrated components, such as capacitors, on the lead frame, and a bias magnet with one or more channels to facilitate overmolding. | 09-26-2013 |
20130249545 | PIEZOELECTRICALLY ACTUATED MAGNETIC-FIELD SENSOR - A magnetic-field sensor that provides an output signal in response to an external magnetic field is described. This magnetic-field sensor includes a pair of cantilevers separated by a horizontal gap, which is displaced vertically over an open cavity by applying a time-varying voltage having a fundamental frequency across piezoelectric layers in the pair of cantilevers. The pair of cantilevers also includes magnetic-flux concentrators that convey the external magnetic field to the horizontal gap between the pair of cantilevers. A stationary magnetoresistive sensor in the horizontal gap transforms the external magnetic field into an output signal. Because the pair of cantilevers is displaced vertically at the fundamental frequency, the output signal includes a modulation signal corresponding to the external magnetic field centered around twice the fundamental frequency. This modulation of the external magnetic field allows 1/f noise to be suppressed, thereby improving the sensitivity of the magnetic-field sensor. | 09-26-2013 |
20130265039 | PLANAR THREE-AXIS MAGNETOMETER - A multi-axis GMR or TGMR based magnetic field sensor system is disclosed. Preferably a three axis sensor system is provided for sensing magnetic flux along three mutually orthogonal axes, which can be used for magnetic compass or other magnetic field sensing applications. The sensing units are operative to sense X and Y axis magnetic flux signals in the device (XY) plane, while Z axis sensitivity is achieved by use of a continuous ring shaped or octagonal magnetic concentrator that is adapted to convert the Z axis magnetic flux signal into magnetic flux signals in the XY plane. | 10-10-2013 |
20130265040 | CURRENT SENSOR - A current sensor includes a substrate, a conductive body being provided above the substrate and extending in one direction, and magnetoresistance effect elements being provided between the substrate and the conductive body and outputting output signals owing to an induction magnetic field from a current to be measured being conducted through the conductive body, wherein each of the magnetoresistance effect elements has a laminated structure including a ferromagnetic fixed layer whose magnetization direction is fixed, a non-magnetic intermediate layer, and a free magnetic layer whose magnetization direction fluctuates with respect to an external magnetic field, the ferromagnetic fixed layer is a self-pinned type formed by antiferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film through an antiparallel coupling film, the Curie temperatures of the first ferromagnetic film and the second ferromagnetic film are approximately equal, and a difference between the magnetization amounts thereof is substantially zero. | 10-10-2013 |
20130271125 | Isolated Voltage Transducer - A transducer is disclosed for detecting the AC and DC voltage difference between two nodes in an electrical circuit and electronically transmitting the measured voltage difference to an electrical system that is electrically isolated from the common mode potential of the two nodes. The voltage drop between two points in a circuit under test is determined by detecting the current flowing through a resistive shunt coil connected in parallel to the test points. Current through the resistive shunt coil is linearly proportional to the voltage difference between the test points, and it is detected by using a magnetic sensor that is separated from the shunt coil by an insulating dielectric barrier. The transducer can be packaged in a standard integrated circuit package in order to provide a small and low cost voltage transducer for test, measurement, control, and signal-isolation applications. | 10-17-2013 |
20130278250 | MAGNETIC FIELD SENSOR - Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four XMR elements connected in a full bridge circuit including parallel branches. The at least four XMR elements are GMR or TMR elements (GMR=giant magnetoresistance; TMR=tunnel magnetoresistance). Two diagonal XMR elements of the full bridge circuit include the same shape anisotropy, wherein XMR elements in the same branch of the full bridge circuit include different shape anisotropies. | 10-24-2013 |
20130278251 | CURRENT SENSOR - A current sensor including a magnetic detecting bridge circuit which is constituted of four magneto-resistance effect elements with a resistance value varied by application of an induced magnetic field from a current to be measured, and which has an output between two magneto-resistance effect elements. The four magneto-resistance effect elements have the same resistance change rate, and include a self-pinned type ferromagnetic fixed layer which is formed by anti-ferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film via an antiparallel coupling film therebetween, a nonmagnetic intermediate layer, and a soft magnetic free layer. Magnetization directions of the ferromagnetic fixed layers of the two magneto-resistance effect elements providing the output are different from each other by 180°. The magnetic detecting bridge circuit has wiring symmetrical to a power supply point. | 10-24-2013 |
20130293224 | CURRENT SENSOR - There is provided a current sensor capable of performing malfunction determination with high accuracy even under the influence of an adscititious magnetic field. A current sensor includes first and second current sensor units, a computation unit, a storage unit, and a determination processing unit. The first current sensor unit measures a target current. The first and second current sensor units have almost the same sensitivity. The computation unit calculates and outputs an addition value and a difference value of outputs of the first and second current sensor units. In the storage unit, the addition and difference values output from the computation unit are stored. The determination processing unit determines whether a malfunction has occurred by using the addition and difference values stored in the storage unit. The determination processing unit determines that a malfunction has occurred, in a case where there is a correlation between the addition and difference values. | 11-07-2013 |
20130293225 | Magnetic Sensor Seed Layer with Magnetic and Nonmagnetic Layers - A magnetic sensor has a bottom shield layer, an upper shield layer, and a sensor stack adjacent the upper shield layer. The sensor includes a seed layer between the bottom shield layer and an antiferromagnetic layer of the sensor stack. The seed layer has a magnetic layer adjacent the sensor stack and a nonmagnetic layer adjacent the bottom shield layer. | 11-07-2013 |
20130300408 | MAGNETOMETER WITH ANGLED SET/RESET COIL - A magnetometer with a set/reset coil having portions that cross portions of sensing strips at an angle in order to create a magnetic field in the sensing strip that is at an angle with respect to the easy axis of magnetization of the sensing strip. Each sensing strip may have a portion having a magnetic field created therein that is different from a magnetic field created in another portion of the same sensing strip. As a result, a lower set/reset coil current is needed to initialize the magnetometer. | 11-14-2013 |
20130300409 | Single-Package Bridge-Type Magnetic Field Sensor - A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding. | 11-14-2013 |
20130307534 | CURRENT SENSOR - A current sensor includes first and second magnetic sensors that are placed around a current line through which a current flows so that the current line is positioned therebetween, and that detect an induction field generated by the current. Each of the first and second magnetic sensors has a main sensitivity axis and a sub-sensitivity axis. The direction of the main sensitivity axis of each of the first and second magnetic sensors is oriented in a direction that is not orthogonal to the direction of the induction field. The directions of the main sensitivity axes of the first and second magnetic sensors are oriented in the same direction and the directions of the sub-sensitivity axes are oriented in the same direction, or the directions of the main sensitivity axes are oriented in opposite directions and the directions of the sub-sensitivity axes are oriented in opposite directions. | 11-21-2013 |
20130320971 | BIPOLAR MAGNETIC JUNCTION TRANSISTOR WITH MAGNETOAMPLIFICATION AND APPLICATIONS OF SAME - In one aspect of the present invention, the semiconductor device is a bipolar magnetic junction transistor (MJT), and includes a first non-magnetic semiconductor layer, a second non-magnetic semiconductor layer, and a magnetic semiconductor layer. The first non-magnetic semiconductor layer has majority charge carriers of a first polarity. The second non-magnetic semiconductor layer is disposed adjacent to the first non-magnetic semiconductor layer such that a first junction is formed at a first interface region between the first non-magnetic semiconductor layer and the second non-magnetic semiconductor layer. The magnetic semiconductor layer has majority charge carriers of the first polarity, and is disposed adjacent to the second non-magnetic semiconductor layer such that a second junction is formed at a second interface region between the second non-magnetic semiconductor layer and the magnetic semiconductor layer. | 12-05-2013 |
20130320972 | MAGNETIC FIELD SENSING DEVICE - The present invention relates to a magnetic field sensing device ( | 12-05-2013 |
20130328556 | MINIMUM MAGNETIC FIELD DETECTION SYSTEMS AND METHODS IN MAGNETORESISTIVE SENSORS - Embodiments relate to magnetoresistive sensors suitable for both angle and field strength sensing. In an embodiment, a sensor comprises two different magnetoresistive (xMR) sensor components for sensing two different aspects or characteristics of a magnetic field. In an embodiment, the first xMR sensor component is configured for magnetic field angle or rotation sensing, while the second xMR sensor component is configured for magnetic field strength sensing. In an embodiment, the second xMR sensor component is configured for magnetic field strength sensing in two dimensions. The second xMR sensor therefore can determine, in embodiment, whether the field sensed with respect to angle or rotation by the first xMR sensor component is of sufficient strength or meets a minimum magnitude threshold. If the minimum threshold is not met, an alarm or alert can be provided. | 12-12-2013 |
20140015524 | INTEGRATED INTERCONNECT AND MAGNETIC-FIELD DETECTOR FOR CURRENT SENSING - A device is provided. The device may include a first electrical connector, a second electrical connector, an interconnect, and a magnetic field detector. The interconnect is mounted in electrical contact with the first electrical connector and the second electrical connector and includes a loop. The magnetic field detector is located in proximity to the loop of the interconnect. The magnetic field detector is located to detect a current flowing in the interconnect when the current flows in the interconnect. | 01-16-2014 |
20140015525 | INTEGRATED MULTILAYER MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF - A magnetic-field sensor includes: a chip including a substrate having a first surface and an insulating layer covering the first surface; first and second magnetoresistors each extending into the insulating layer and having a main axis of magnetization and a secondary axis of magnetization; a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor; a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor. The main axes of magnetization extending transversely to each other and the secondary axes of magnetization extending transversely to each other. The first and second magnetoresistors extend into the insulating layer at a first distance and a second distance, respectively, that differ from one another, from the first surface. | 01-16-2014 |
20140021947 | Apparatus and method for the contactless detection of vehicles - An apparatus and a method for the contactless detection of vehicles via one or more magnetometers for measuring the geomagnetic field, in which at least one magnetometer includes a device for measuring the gravitational field. | 01-23-2014 |
20140028307 | MAGNETORESISTIVE SENSOR SYSTEMS AND METHODS HAVING A YAW ANGLE BETWEEN PREMAGNETIZATION AND MAGNETIC FIELD DIRECTIONS - Embodiments relate to magnetoresistive (xMR) sensors which provide a yaw angle between a reference premagnetization direction of the sensor layer and the magnetic field to be detected, or between a direction of a bias magnetic field and the magnetic field to be detected. In an embodiment, an xMR sensor is rotated or tilted with respect to a direction of a magnetic field to be sensed such that a premagnetization direction of the reference premagnetization layer of the xMR sensor is also rotated or tilted at some yaw angle with respect to the direction of the magnetic field. In another embodiment, a bias magnet or other source is used with sensors not having premagnetization or reference layers, such as anisotropic magnetoresistive (AMR) sensors, and the direction of the bias magnetic field is also tilted or rotated with respect to the direction of the magnetic field to be detected. | 01-30-2014 |
20140028308 | MAGNETIC SENSOR DEVICE - A magnetic sensor device includes a first magnet and a second magnet that are disposed on mutually opposing sides of a conveyance path, and one of poles of the first magnet faces an opposite pole of the second magnet. The first magnet and the second magnet generate a cross magnetic field whose strength in a spacing direction, which is orthogonal to a conveying direction, is within a predetermined range. An AMR element is located in a magnetic field in which the strength of the cross magnetic field in the spacing direction is within a predetermined range, and detects, as change in a resistance value, change in the cross magnetic field caused by an object to be detected. A multilayer board outputs the change in the resistance value detected by the AMR element to a processing circuit. | 01-30-2014 |
20140035570 | SINGLE-CHIP PUSH-PULL BRIDGE-TYPE MAGNETIC FIELD SENSOR - The present invention discloses a design of a single-chip push-pull bridge sensor, composed of magnetoresistive elements, utilizing on-chip permanent magnets. The permanent magnets are oriented to preset magnetization directions of free layers of adjacent sensor bridge arms so that they point to different directions with respect the same sensing direction, enabling push-pull operation. The push-pull bridge sensor of the present invention is integrated on a single chip. Additionally, an on-chip coil is disclosed to reset or calibrate the magnetization directions of the free layers of the magnetoresistive elements. | 02-06-2014 |
20140035571 | MAGNETORESISTIVE SENSORS HAVING REDUCED AMR EFFECTS - Embodiments related to magnetoresistive angle sensor layouts having reduced anisotropic magneto resistance (AMR) effects. Embodiments provide magnetoresistive angle sensor layouts that reduce or eliminate distortion related to AMR effects, can be more easily scaled up or down, and are more compact to use available surface area more efficiently. | 02-06-2014 |
20140035572 | Magnetic Layer with Grain Refining Agent - A magnetic sensor includes a magnetic layer comprising magnetic material and a grain refining agent. The magnetic layer having a grain-refined magnetic layer surface. A layer adjacent the magnetic layer has a layer surface that conforms to the grain-refined magnetic layer surface. | 02-06-2014 |
20140035573 | SINGLE-CHIP TWO-AXIS MAGNETIC FIELD SENSOR - The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions. | 02-06-2014 |
20140062470 | THREE-DIMENSIONAL IN-PLANE MAGNETIC SENSOR - A three-dimensional (3D) in-plane magnetic sensor includes a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a circuit. The first magnetic sensor, second magnetic sensor and third magnetic sensor are installed on a same plane to measure the magnetic field component of first direction, second direction and third direction, where the third direction is perpendicular to the first and second direction. The third magnetic sensor includes a third fixed layer, a third magnetic insulating layer and a third free layer. The magnetoresistance of the third free layer is an intermediate value in the spontaneous magnetization direction, and is varied when interfered by an external magnetic field. In short, the 3D in-plane magnetic sensor is manufactured with semiconductor processing which does not require vertical adhesion, and also bring the benefits of improved production capacity, prolonged product life, reduced manufacturing cost and time. | 03-06-2014 |
20140062471 | Single-package Power Meter - A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load. An application specific integrated circuit is further disclosed that controls the bias currents of the sensors for autoranging purposes and also for computing desired parameters, such as power consumption. | 03-06-2014 |
20140062472 | MAGNETIC SENSOR AND BIOMAGNETISM MEASUREMENT SYSTEM - A magnetic sensor includes a plurality of assemblies combined. Each assembly includes a plurality of tunnel magnetoresistive elements, a capacitor and a fixed resistor. The tunnel magnetoresistive elements are (i) disposed in such a way that fixed magnetization directions of fixed magnetic layers are substantially identical and changeable magnetization directions of free magnetic layers with no magnetic field applied are substantially identical and (ii) connected to each other in series-parallel. The capacitor is connected in parallel to the tunnel magnetoresistive elements. The fixed resistor is connected in series to the tunnel magnetoresistive elements and to the capacitor. The assemblies are (i) disposed in such a way that the fixed magnetization directions of the fixed magnetic layers of the assemblies have a relative angle of more than 90 degrees and (ii) connected to each other in series and/or in parallel. | 03-06-2014 |
20140084913 | LOW-NOISE MAGNETIC SENSORS - Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed. | 03-27-2014 |
20140084914 | CURRENT DETECTION DEVICE - In a current detection device for detecting current in a busbar, a reduction in device size may be realized by employing a small magnetic core. The prevention or reduction of excessive heat generation by the busbar, the facilitation of the attachment task, and a reduction in the amount of space required for the attachment task may also be realized. The folded-back busbar is U-shaped with a bar-shaped penetration portion that passes through a hole portion of a magnetic core, two bar-shaped extension portions, and two flat plate-shaped penetration portions. The width of each terminal portion is larger than the widths of the penetration portion and the extension portions. An insulating casing supports the magnetic core, a Hall element, and the folded-back busbar in a fixed positional relationship, with the two terminal portions being exposed to the outside. | 03-27-2014 |
20140111194 | Magnatoresistive Sensing Device and Method for Fabricating the Same - A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material. | 04-24-2014 |
20140111195 | MAGNETIC FIELD SENSOR FOR SENSING EXTERNAL MAGNETIC FIELD - A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively. | 04-24-2014 |
20140111196 | CURRENT SENSOR - A current sensor for measuring a current flowing through a conductor includes a sensor substrate, a magnetoelectric converter formed on a surface of the sensor substrate and configured to output a signal changing with an applied magnetic field, and a magnetic shield that surrounds the sensor substrate and the conductor to magnetically shield the inside from the outside. The output signal of the magnetoelectric converter changes with a magnetic filed applied along the formation surface of the sensor substrate. The magnetic shield has at least one gap for reducing magnetic saturation in the magnetic shield. The gap and the sensor substrate are located at the same height in a z-direction orthogonal to the formation surface of the sensor substrate. | 04-24-2014 |
20140132257 | MAGNETIC DETECTION DEVICE - To increase an output from a magnetoresistive element without using a special magnetic material, provided is a magnetic detection device including a magnetoresistive element including a ferromagnetic reference layer having a fixed magnetization direction, to which a spin wave induction layer is connected, so that the spin wave induction layer injects, into the ferromagnetic reference layer, electrons having spins in a specific direction by a spin electromotive force internally generated. | 05-15-2014 |
20140139214 | MAGNETIC SENSOR USING SPIN TRANSFER TORQUE DEVICES - The present invention is directed to a magnetic sensor using a spin transfer torque device, including a spin transfer torque device configured such that the magnetization direction thereof is varied by current, a bipolar pulse source configured to apply bipolar pulses to the spin transfer torque device in order to control the coercive field and sensitivity of the spin transfer torque device, and a signal processing unit configured to calculate magnetic susceptibility or magnetic resistance by counting the parallel (P) or anti-parallel (AP) states of the spin transfer torque device in response to the applied bipolar pulses. | 05-22-2014 |
20140159717 | MAGNETORESISTIVE SENSOR INTEGRATED IN A CHIP FOR DETECTING MAGNETIC FIELDS PERPENDICULAR TO THE CHIP AND MANUFACTURING PROCESS THEREOF - An integrated magnetoresistive sensor, formed in a chip including a substrate having a surface and an insulating region covering the surface of the substrate. A magnetoresistor, of a first ferromagnetic material, is formed in the insulating region and has a sensitivity plane parallel to the surface. A concentrator of a second ferromagnetic material is formed in the substrate and has at least one arm extending in a transverse direction to the sensitivity plane. The arm has one end in contact with the magnetoresistor. | 06-12-2014 |
20140176132 | MAGNETIC FIELD SENSORS AND SENSING CIRCUITS - A magnetic sensor for sensing an external magnetic field includes first and second electrodes and first and second magnetic tunneling junctions. The first and second electrodes are disposed over a substrate; and the first and second magnetic tunneling junctions are conductively disposed between the first and second electrodes and connected in parallel between the first and second electrodes. The first and second magnetic tunneling junctions are arranged along a first easy axis of the magnetic sensor. The first magnetic tunneling junction includes a first pinned magnetization and a first free magnetization, and the second magnetic tunneling junction includes a second pinned magnetization and a second free magnetization. The first free magnetization and the second free magnetization are arranged substantially in parallel to the first easy axis and in substantially opposite directions. | 06-26-2014 |
20140197827 | XMR-Sensor and Method for Manufacturing the XMR-Sensor - An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area. | 07-17-2014 |
20140197828 | HIGH FREQUENCY SWITCH - When a switch is set to off, and a switch is set to on, the voltage of a SigOut terminal is stabilized with a reference voltage, and a bias voltage is applied to a capacitor. Changing the switch from on to off, with the bias voltage retained in the capacitor, a detection signal which is input via a SigIn terminal is amplified with the reference voltage as a reference, and an amplified signal is output from the SigOut terminal. | 07-17-2014 |
20140218020 | Patterned MR Device with Controlled Shape Anisotropy - A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a top surface of the free layer, or below a plane that includes the bottom surface of the magnetic sensor. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor. | 08-07-2014 |
20140232390 | Magnatoresistive Component and Magnatoresistive Device - A magnetoresistive component comprises a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer. The horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side, along its extending direction. The nonparallel magnetoresistive layer is not parallel to the surface of the substrate and is physically connected to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer. | 08-21-2014 |
20140239948 | Apparatus and Method for In-Field Magnetic Measurements - A magnetic field verifier apparatus includes a magnetic field detection element configured to produce a voltage signal in response to an applied magnetic field wherein the voltage signal corresponds to the strength of the applied magnetic field. Substantially identical circuit boards or units are connected to a central unit or mother board to place magnetic field detection elements of each board or unit in an mutually approximately orthogonal relationship. A microcontroller is in communication with the voltage signal. The magnetic field verifier apparatus is configurable to sense particular field strengths at various frequencies and store the readings to provide the user with a reliable verification that a particular magnetic field strength has been produced in a particular environment. | 08-28-2014 |
20140247044 | CURRENT SENSOR - A current sensor includes a first magnetic sensor and a second magnetic sensor which are configured to detect an induced magnetic field from target current to be measured flowing through a current line. The first and second magnetic sensors each include a magnetoresistive element that includes a free magnetic layer and a hard bias layer applying a bias magnetic field to the free magnetic layer. The bias magnetic field in the magnetoresistive element of the first magnetic sensor is oriented opposite to the bias magnetic field in the magnetoresistive element of the second magnetic sensor. | 09-04-2014 |
20140266184 | PLANARIZED THREE-DIMENSIONAL (3D) MAGNETIC SENSOR CHIP - A planarized 3-dimensional magnetic sensor chip includes a first magnetic sensing device, a second magnetic sensing device, a third magnetic sensing device and a magnetic flux bending concentrating structure on a circuit chip substrate, wherein the first magnetic sensing device and the second magnetic sensing device are used to measure the magnitude of flux in a first direction and a third direction together, and the third magnetic sensing device is used to measure the magnitude of flux in a second direction, the magnetic flux bending concentrating structure is used to bend the magnitude of flux in the third direction to the first direction, such that the magnitude of flux in the third direction can be measured by first magnetic sensing device and the second magnetic sensing device in the first direction. | 09-18-2014 |
20140266185 | MAGNETIC FIELD SENSING APPARATUS AND METHODS - Magnetic field sensor designs that provide both increased directionality and proximate coupling desirable for improved directionality and sensitivity and methods for fabricating them. | 09-18-2014 |
20140266186 | MAGNETIC TUNNEL JUNCTION SENSORS AND METHODS FOR USING THE SAME - Provided are magnetic sensors, which include a magnetic tunnel junction (MTJ) magnetoresistive element, a first electrode contacting at least a portion of a surface of the MTJ magnetoresistive element and extending beyond an edge of the surface of the MTJ magnetoresistive element, and a second electrode contacting at least a portion of an opposing surface of the MTJ magnetoresistive element and extending beyond an edge of the opposing surface of the MTJ magnetoresistive element, where facing surfaces of the extending portions of the first and second electrodes are non-overlapping. Also provided are devices, systems and methods in which the subject magnetic sensors find use. | 09-18-2014 |
20140266187 | MAGNETIC SENSOR UTILIZING MAGNETIZATION RESET FOR SENSE AXIS SELECTION - This document discusses, among other things, a first magnetic sensor configured to sense first and second components of a magnetic field in respective, orthogonal directions, using first, second, third, and fourth sense elements, each on an angled surface sloped with respect to a surface, each including respective first, second, third, and fourth longitudinal axes, each parallel to each other. Further, a second magnetic sensor on the same surface can sense second and third components of a magnetic field in respective, orthogonal directions, using first, second, third, and fourth sense elements, each on an angled surface sloped with respect to the first surface, each including respective first, second, third, and fourth longitudinal axes, each parallel to each other and orthogonal to the longitudinal axes of the first magnetic sensor. | 09-18-2014 |
20140285188 | DETECTION CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, MAGNETIC FIELD ROTATION ANGLE DETECTION DEVICE, AND ELECTRONIC DEVICE - Detection of the rotation angle of a magnetic field using a magnetic sensor in which two sensor units are arranged at a predetermined angle with respect to each other is performed with a resolution of an angle smaller than 45° with a simple circuit configuration. A detection circuit is connectable to a magnetic sensor in which first and second sensor units are arranged, at a predetermined angle with respect to each other, each sensor unit having a bridge circuit of magnetoresistance elements. The detection circuit includes a first comparison circuit that compares output signals of the first or second sensor unit, a second comparison circuit that compares an output signal of the first sensor unit with an output signal of second sensor unit, and a rotation angle calculation circuit that calculates a rotation angle of a magnetic field based on the comparison results of the first and second comparison circuits. | 09-25-2014 |
20140292321 | MAGNETIC SENSOR WITH REDUCED EFFECT OF INTERLAYER COUPLING MAGNETIC FIELD - A magnetic sensor includes an MR element and a pair of magnets. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The pair of magnets applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction. | 10-02-2014 |
20140292322 | MAGNETIC SENSOR WITH REDUCED EFFECT OF INTERLAYER COUPLING MAGNETIC FIELD - A magnetic sensor includes an MR element and a bias field generation unit. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The bias field generation unit applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction. | 10-02-2014 |
20140312894 | MEASURING DEVICE FOR MEASURING THE MAGNETIC PROPERTIES OF THE SURROUNDINGS OF THE MEASURING DEVICE - A measuring device for measuring magnetic properties of the surroundings of the device includes at least one magnetoresistive element extending in a line direction, and a support field device generating a magnetic support field in an area over the line direction. A pre-magnetization device of one or more magnets are arranged at a distance from the sensor line in a direction vertical to the line direction and extending parallel to the line direction. The pre-magnetization device is arranged relative to the sensor line such that the fields of the pre-magnetization device and the support magnetic field overlap to provide an overlapping magnetic field with a field strength component pointing in the line direction that is greater at one location on the sensor line than the strength of a field component pointing vertically toward the line direction not in the direction of the height of the magnetoresistive element. | 10-23-2014 |
20140312895 | NON-CONTACT CURRENT AND VOLTAGE SENSOR - A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage. | 10-23-2014 |
20140320124 | INTEGRATED CIRCUIT PACKAGE HAVING A SPLIT LEAD FRAME AND A MAGNET - A magnetic field sensor includes a lead frame having a plurality of leads, at least two of which have a connection portion and a die attach portion. A semiconductor die is attached to the die attach portion of the at least two leads and a separately formed ferromagnetic element, such as a magnet, is disposed adjacent to the lead frame. | 10-30-2014 |
20140320125 | NON-INTRUSIVE MONITORING - Methods and apparatus for non-intrusive monitoring by sensing physical parameters such as electric and/or magnetic fields. Such apparatus and techniques may find application in a variety of fields, such as monitoring consumption of electricity, water, etc., in homes or businesses, for example, or industrial process monitoring. | 10-30-2014 |
20140327436 | Power Module with Integrated Current Sensor - A power module includes a first substrate having a metallized side, a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate, and a semiconductor die interposed between the first and second substrates. The semiconductor die has a first side connected to the metallized side of the first substrate and an opposing second side connected to the metallized side of the second substrate. The power module further includes a sensor connected to the metallized side of the first substrate and galvanically isolated from the metallized side of the second substrate. The sensor is aligned with a first metal region of the metallized side of the second substrate so that the sensor can measure a magnetic field generated by the first metal region. | 11-06-2014 |
20140327437 | CURRENT SENSOR - This patent discloses a current sensor comprising a sensor bridge ( | 11-06-2014 |
20140340081 | MAGNETIC SENSOR - A magnetic sensor includes a detection portion that includes first and second magnetic resistance elements. Each of the first and second magnetic resistance elements includes a pinned layer whose magnetic direction is fixed in a predetermined direction and a free layer whose magnetic direction changes in accordance with an external magnetic field. A resistance value of each of the first and second magnetic resistance elements changes in accordance with an angle between the magnetization direction of the pinned layer and the magnetization direction of the free layer. The first and second magnetic resistance elements are connected in series in a state where the magnetization directions of the pinned layers are perpendicular to each other. The detection portion outputs a middle point voltage of the first and second magnetic resistance elements as a detection signal. | 11-20-2014 |
20140347047 | MAGNETORESISTIVE SENSOR - A magnetoresistive sensor is provided. Specifically, multiple layers of or single layer of conductor line are formed at the same level as an insulating layer on a substrate as a bottom conductive layer. A magnetoresistive structure is formed on the bottom conductive layer and has opposite first surface and second surface. The second surface faces toward the substrate and is contacted with the bottom conductive layer. Afterward, another insulating layer is formed on the first surface, a slot is formed at the same level as the another insulating layer and a conductor line is formed in the slot and contacted with the first surface, so that one layer or multiple layers of conductor line can be formed as a top conductive layer. A lengthwise extending direction of each of the bottom and top conductor layers is intersected a lengthwise extending direction of the magnetoresistive structure with an angle. | 11-27-2014 |
20140361767 | DEVICES AND METHODS FOR SENSING CURRENT - Devices and methods for sensing current are described herein. One device ( | 12-11-2014 |
20140375311 | MAGNETIC SENSOR AND MAGNETIC DETECTING METHOD OF THE SAME - The present invention relates to a magnetic sensor and a magnetic detecting method. A first arrangement pattern includes: a first magnetic detection unit ( | 12-25-2014 |
20150008913 | Single-Chip Three-Axis Magnetic Field Sensing Device - A single-chip three-axis magnetic field sensing device is provided. This single-chip three-axis magnetic field sensing device comprises a substrate, a first sensing module, a second sensing module, a third sensing module and at least one coil. The substrate includes a surface. The first sensing module comprises at least one first magnetoresistive element and is configured to sense a first magnetic field component substantially parallel to the surface. The second sensing module comprises at least one second magnetoresistive element and is configured to sense a second magnetic field component substantially parallel to the surface. The third sensing module comprises at least one third magnetoresistive element and is configured to sense a third magnetic field component substantially perpendicular to the surface. Wherein one of the first magnetoresistive element and the second magnetoresistive element and the third magnetoresistive element is disposed right above or right below the at least one coil. | 01-08-2015 |
20150008914 | DETECTION SYSTEM FOR DETECTING MAGNETIC OBJECTS IN THE HUMAN ORGANISM - The subject matter of the invention is a detector system for detecting magnetic bodies in the human organism, which comprises at least two sensor assemblies, wherein each sensor assembly has one, two or three anisotropic magnetic resistance sensors, of which the axes of weak magnetisation point in different directions in pairs, and each sensor assembly has a spacing of 0.5 to 50 cm from the sensor assembly or the other sensor assemblies, and at least two sensor assemblies are tilted at an angle of 0 to 45° with respect to one another, and in addition a method for detecting the magnetic flux produced by a magnetic body in the human organism, and the use of the detector system according to the invention for detecting swallowed magnetic bodies and the disintegration of the same in the digestive system. | 01-08-2015 |
20150008915 | MAGNETIC FIELD SENSOR - A sensor of magnetic fields along a direction of measurement comprising N magneto-resistive transducers TM | 01-08-2015 |
20150015249 | Current Sensor Device - A current sensor device includes a casing having a cavity and a conductor fixedly mounted to the casing. A semiconductor chip configured to sense a magnetic field is arranged in the cavity. An electrically insulating medium is configured to at least partially fill the cavity of the casing. | 01-15-2015 |
20150022199 | CURRENT SENSOR - A current sensor includes: four magnetic sensor elements arranged within a plane orthogonal to a measured current, having a symmetrical magnetic characteristics curve, and adapted to convert a magnitude of a magnetic field into an electrical signal and output the electrical signal; a bridge circuit including the four magnetic sensor elements; and a bias magnetic field application member adapted to applying a bias magnetic field to the magnetic sensor elements. | 01-22-2015 |
20150028866 | VAPOR CELL STRUCTURE HAVING CAVITIES CONNECTED BY CHANNELS FOR MICRO-FABRICATED ATOMIC CLOCKS, MAGNETOMETERS, AND OTHER DEVICES - A first apparatus includes a vapor cell having first and second cavities fluidly connected by multiple channels. The first cavity is configured to receive a material able to dissociate into one or more gases that are contained within the vapor cell. The second cavity is configured to receive the one or more gases. The vapor cell is configured to allow radiation to pass through the second cavity. A second apparatus includes a vapor cell having a first wafer with first and second cavities and a second wafer with one or more channels fluidly connecting the cavities. The first cavity is configured to receive a material able to dissociate into one or more gases that are contained within the vapor cell. The second cavity is configured to receive the one or more gases. The vapor cell is configured to allow radiation to pass through the second cavity. | 01-29-2015 |
20150035528 | SEMICONDUCTOR DEVICE PROVIDED WITH DIRECTION SENSOR ELEMENTS - A semiconductor device is provided with a substrate including a main surface and a back surface that face in opposite directions to each other in a thickness direction, and first, second and third direction sensor elements having different detection reference axes from each other. The substrate is formed with a recessed portion that is recessed from the main surface toward the back surface side. The first direction sensor element is disposed at least partially within the recessed portion. The second direction sensor element is disposed so as to overlap with the main surface as viewed in the thickness direction. | 02-05-2015 |
20150061662 | Current Sensor - Embodiments of the disclosure provide a current sensor including a conductive element and at least two magnetic field sensors. The conductive element includes at least three separate terminal areas, a common conductive area and at least three separate intermediate areas connecting the respective separate terminal areas to the common conductive area. Each of the terminal areas is connected separately via a respective separate intermediate area of the at least three separate intermediate areas to the common conductive area to guide a current applied to the respective terminal area into the common conductive area. The at least two magnetic field sensors are arranged at different geometric positions adjacent to the at least three separate intermediate areas, wherein each of the magnetic field sensors is configured to sense a magnetic field component of each current flowing into the common conductive area to provide a sensor signal based thereon. | 03-05-2015 |
20150061663 | APPARATUS AND METHOD FOR SEQUENTIALLY RESETTING ELEMENTS OF A MAGNETIC SENSOR ARRAY - A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio. | 03-05-2015 |
20150084624 | MAGNETORESISTIVE SENSOR - Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each include a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack. | 03-26-2015 |
20150091559 | ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS AND TECHNIQUES FOR FABRICATING SAME - Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In at least one embodiment, an AMR sensor is provided that includes barber pole structures having upper and low metal layers that are formed of different materials. The metal material closer to the AMR element is formed of a material that can be etched using an etching process that does not attack the AMR material. In some other embodiments, AMR sensors having segmented AMR sensing elements are described. | 04-02-2015 |
20150091560 | Magnetoresistive sensor for measuring a magnetic field - The present invention relates to a magnetoresistive sensor for measuring a magnetic field. A calculation of the sensitivity to external magnetic fields is provided, and it is shown to be related to the shape anisotropy of the magnetoresistive sensing elements. Moreover, it is shown that sensitivity may be made highest when the shape of the magnetoresistive element is long parallel to the sensing axis, and a magnetic bias field strong enough to saturate the magnetoresistive element's magnetization, H | 04-02-2015 |
20150097560 | MAGNETIC SENSOR DEVICE - Provided is a magnetic sensor device capable of attenuating the intensity of the magnetic field to be applied to the magnetic sensor. A magnetic sensor device includes a magnetic sensor element which detects the intensity of a magnetic field in a predetermined detection axis direction, and a magnetic field attenuation body which includes a first magnetic field attenuation unit and a second magnetic field attenuation unit, each of the attenuation units having a surface and the surfaces being opposed to each other with the magnetic sensor element therebetween. | 04-09-2015 |
20150102808 | MAGNETIC SENSOR - A magnet is disposed on one face of a hollow section which is the conveyance path of an object of detection, and has a magnetic pole of designated length along the conveyance direction of the object of detection. A magnetic body is disposed along the conveyance direction opposite the magnet with the hollow section therebetween, and generates a cross magnetic field that crosses the hollow section formed between the magnetic body and the magnet. An anisotropic magnetoresistance element is disposed on the side of the magnetic body carrier facing the hollow section, and has magneto-sensing action in the conveyance direction. | 04-16-2015 |
20150108971 | APPARATUS AND METHOD FOR DETECTING AN ERROR IN A MEASUREMENT OF A QUANTITY - Embodiments relate to an apparatus comprising a first measurement bridge circuit. The first measurement bridge circuit comprises a first half bridge for providing a first half bridge signal in response to a quantity to be measured and a second half bridge for providing a second half bridge signal in response to the quantity. The apparatus further comprises a second measurement bridge circuit. The second measurement bridge circuit comprises a third half bridge for providing a third half bridge signal in response to the quantity and a fourth half bridge for providing a fourth half bridge signal in response to the quantity. The apparatus also comprises an error detector. The error detector is configured to determine an error signal indicative of an error of the measurement of the quantity based on a combination of the first, the second, the third and the fourth half bridge signal. | 04-23-2015 |
20150108972 | SENSOR DEVICE AND METHOD - Embodiments relate to a sensor device including a layer stack | 04-23-2015 |
20150108973 | MAGNETIC SENSOR AND METHOD FOR MANUFACTURING THE SAME - An object is to achieve miniaturization and an increase in performance of a magnetic sensor device, and the magnetic sensor according to the present invention has a magnetic film and a metal electrode to be electrically coupled to the magnetic film, the magnetic film and the metal electrode constituting a magnetic sensor portion. The metal electrode is formed with level difference portions, and the magnetic film is formed on the level difference portions and sidewalls that connect the level difference portions. | 04-23-2015 |
20150108974 | MAGNETOMETER - A magnetometer ( | 04-23-2015 |
20150115951 | POWER MEASURING APPARATUS - A power measurement apparatus configured to measure power consumed at a load, the apparatus includes a magnetic film module, an adjuster, a measurement resistance, and a voltage detector. The magnetic film module is arranged so that a longitudinal direction of the magnetic film module is parallel to current flowing in the load. The adjuster is configured to adjust a pass-frequency and a phase of a voltage at one terminal of the magnetic film module. The measurement resistance is serial-connected to the magnetic film module. The voltage detector is configured to detect a voltage between both terminals of the magnetic film module. | 04-30-2015 |
20150123655 | ELECTROSTATIC DISCHARGE PROTECTION FOR A MAGNETORESISTIVE SENSOR - A method of designing, for a magneto-resistive (MR) sensor, a protection circuit having a first and a second N-channel field-effect transistor (NFET) and at least one positive-negative (PN) diode is disclosed. The method may include determining a safe operating voltage range for the MR sensor and determining, within the safe operating voltage range, a normal operating voltage range for the MR sensor. The method may also include determining a protection threshold voltage range outside of the normal operating voltage range and within the safe operating voltage range of the MR sensor. The method may also include selecting device parameters to configure the first and second NFETs and the at least one PN diode to, in response to a voltage applied to the MR sensor being within a protection threshold voltage range, limit, by shunting current, the voltage applied to the MR sensor. | 05-07-2015 |
20150130455 | Magnetoresistive magnetic field gradient sensor - Disclosed is a magnetoresistive magnetic field gradient sensor, comprising a substrate, a magnetoresistive bridge and a permanent magnet respectively disposed on the substrate; the magnetoresistive bridge comprises two or more magnetoresistive arms; each magnetoresistive arm consists of one or more magnetoresistive elements; each magnetoresistive element is provided with a magnetic pinning layer; the magnetic pinning layers of all the magnetoresistive elements have the same magnetic moment direction; the permanent magnet is disposed adjacent to each magnetoresistive arm to provide a bias field, and to zero the offset of the response curve of the magnetoresistive element; the magnetoresistive gradiometer includes wire bonding pads that can be electrically interconnected using wire bonding to an ASIC or to the lead frame of a semiconductor chip package. | 05-14-2015 |
20150137806 | THREE AXIS MAGNETIC SENSOR DEVICE AND METHOD USING FLEX CABLES - A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member. | 05-21-2015 |
20150145511 | MAGNETIC SENSOR - In a magnetic sensor, a pinned layer covers a wiring layer on a side opposite to a substrate with respect to the wiring layer and includes a bent portion having a bent shape in cross section. Free layers are arranged on a side opposite to the substrate with respect to the pinned layer. The size of the free layers in a planar direction is set to a size smaller than the size of the pinned layer in the planar direction. A magnetic field leaking from the pinned layer may form a closed loop adjacent to the substrate, that is, on a side opposite to the free layers with respect to the substrate. Therefore, influence of the magnetic field leaking from the pinned layer on the free layers can be restricted. | 05-28-2015 |
20150294521 | MAGNETIC HEAD FOR BANKNOTE DETECTION - A magnetic currency verification head may include a magnetoresistive sensor chip, and a magnetic bias unit disposed on the side of the magnetoresistive sensor chip away from the detection surface of the magnetic currency verification head, and separated from the magnetoresistive sensor chip; the magnetoresistive sensor chip comprises a gradiometric bridge circuit that includes magnetic sensor elements; the sensitive direction of the magnetic sensor elements is parallel to the detection surface of the magnetic currency verification head; and the magnetic bias unit has a recessed magnetic structure configured such that the magnetic field generated by the magnetic bias unit only has a small magnetic field component in the direction parallel to the detection surface, thereby enabling the magnetic sensor elements to operate in their linear range. As a result, the magnetic currency verification head has high sensitivity and signal-to-noise ratio. | 10-15-2015 |
20150309127 | MAGNETIC FIELD CURRENT SENSORS, SENSOR SYSTEMS AND METHODS - Embodiments relate to coreless magnetic field current sensors, systems and methods, such as magnetoresistive sensors, systems and methods, to sense current flow in a conductor via a related magnetic field. In an embodiment, a current sensor system for sensing a current in a conductor from a magnetic field induced thereby, comprising a plurality N of magnetoresistive (MR) sensors arranged on a circle concentric to a center of the conductor and spaced apart from one another by 360 degrees/N, wherein each MR sensor has a sensitivity plane and is responsive to a projection of the magnetic field into the sensitivity plane, the sensitivity planes of the plurality of MR sensors being parallel, and wherein the plurality of MR sensors are arranged relative to the conductor such that the magnetic field has a non-vanishing component parallel to the sensitivity plane; at least one magnetic element arranged to provide a bias magnetic field on the plurality of MR sensors; and circuitry coupled to the plurality of MR sensors to determine the current in the conductor by combining signals from each of the plurality of MR sensors. | 10-29-2015 |
20150309128 | MAGNETIC FIELD SENSOR DEVICE - Magnetic field sensor devices and associated methods are disclosed. In some implementations, a second magnetic field sensor is provided, for example between bridge parts of a first magnetic field sensor. | 10-29-2015 |
20150309129 | MAGNETIC SENSOR AND PRODUCTION METHOD THEREFOR - A magnetic sensor including a pair of permanent magnets disposed at a distance from each other so that different poles are opposed to each other, and a magnetoresistive array disposed between the pair of permanent magnets. The magnetoresistive array has four magnetoresistive elements disposed so that maximum detection directions of the adjacent elements are different from one another, and the four magnetoresistive elements are connected in a bridge circuit. The pair of permanent magnets and the magnetoresistive array are disposed so that a direction substantially orthogonal to a magnetic field detection direction and a magnetic field direction between the pair of permanent magnets are neither parallel nor perpendicular to each other. | 10-29-2015 |
20150316584 | SENSOR FOR OUTPUTTING AN ELECTRIC SIGNAL ON THE BASIS OF A DETECTED PHYSICAL VARIABLE - A sensor for outputting an electrical signal on the basis of a detected physical variable, including: a measuring circuit accommodated in a circuit housing and capable of contacting an external circuit by an electric signal connection; and a protective body consisting of a protective compound with an opening, the compound surrounding the circuit housing and the opening exposing part of the circuit housing. The surface of the circuit housing has a moulded element which is surrounded by the protective compound. | 11-05-2015 |
20150316624 | APPARATUS AND METHOD FOR SEQUENTIALLY RESETTING ELEMENTS OF A MAGNETIC SENSOR ARRAY - A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration. prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio. | 11-05-2015 |
20150330946 | System and Method of Measuring Defects in Ferromagnetic Materials - Defects in ferromagnetic materials are detected and characterized by analyzing the items' magnetic fields to find portions of the magnetic fields that differ in characteristic ways from residual magnetic fields generated by non-defective portions of the items. The portions of the magnetic fields that differ in the characteristic ways correspond to locations of the defects. The residual magnetic fields correspond to portions of the items distant from the defects. The defect characterization may include volume of material lost due to each defect and/or width and/or depth of each defect. | 11-19-2015 |
20150331065 | BIPOLAR CHOPPING FOR 1/F NOISE AND OFFSET REDUCTION IN MAGNETIC FIELD SENSORS - A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor. The TMR field sensor comprises a first bridge circuit including multiple TMR elements to sense a magnetic field and a second circuit to apply a bipolar current pulse adjacent to each TMR element. The current lines are serially or sequentially connected to a current source to receive the bipolar current pulse. The field sensor has an output comprising a high output and a low output in response to the bipolar pulse. This asymmetric response allows a chopping technique for 1/f noise reduction in the field sensor. | 11-19-2015 |
20150331069 | Magnetic-Field Sensor - An embodiment of a magnetic-field sensor includes a magnetic-field sensor arrangement and a magnetic body which has, for example, a non-convex cross-sectional area with regard to a cross-sectional plane running through the magnetic body, the magnetic body having an inhomogeneous magnetization. | 11-19-2015 |
20150331070 | Magnetic-Field Sensor - An embodiment of a magnetic-field sensor includes a magnetic-field sensor arrangement and a magnetic body which has, for example, a non-convex cross-sectional area with regard to a cross-sectional plane running through the magnetic body, the magnetic body having an inhomogeneous magnetization. | 11-19-2015 |
20150331071 | MAGNETORESISTIVE-BASED HIGH FIELD SENSOR - An omnidirectional magnetoresistive magnetic field sensor includes a plurality of magnetic material film layers each having an equal thickness of less than 0.5 nanometers (nm), and a plurality of non-magnetic spacer layers between each of the magnetic material film layers. | 11-19-2015 |
20150331072 | MAGNETIC FIELD DETECTING SENSOR AND MAGNETIC FIELD DETECTING APPARATUS USING THE SAME - A magnetic field detecting sensor includes a bridge circuit which is connected to multiple magnetoresistive effect elements and is capable of outputting a differential voltage between specified connection points, a magnetic field generating conductor for providing the magnetoresistive effect elements with a magnetic field in a direction opposite to that of the detection magnetic field by disposing a magnetic body near the center of the bridge circuit, a differential operation circuit which the differential voltage is input in and makes a feedback current flow to the magnetic field generating conductor, wherein the feedback current generates the magnetic field in a direction opposite to that of the detection magnetic field in the magnetic field generating conductor, and a voltage converting circuit for outputting the feedback current as a voltage value. The magnetic field generating conductor and the magnetoresistive effect elements are formed in the same stacked body. | 11-19-2015 |
20150355143 | HIGH MAGNETIC MOMENT PARTICLE DETECTION - A device includes a sensor surface and a pair of electrodes. The sensor surface includes a first conductive layer separated from a second conductive layer by an intermediary layer, a magnetization direction of the first conductive layer and a magnetization direction of the second conductive layer having a ground state orientation of approximately 0 degrees. An electrical resistance between the pair of electrodes is determined by a magnetic field proximate the sensor surface. | 12-10-2015 |
20150355294 | MAGNETOMETERS - The magnetometers possess a detector part with a magnetosensitive material sensitive to the magnetic field and coil surrounding its magnetosensitive material to pick-up the magnetic field, a pulse generator circuit supplies pulse current to the magnetic material, a sample holding circuit including with an electronic switch synchronized with pulse timing for switching on/off and holding capacitance to charge electricity produced by the pickup coil during the switch on period, and an amplifier circuit amplifies the holding capacitance voltage. Magnetometers possess a Buffer circuit connecting the output side of the pickup coil with the input side of the Buffer circuit and connects the output side of the Buffer circuit with the input side of the electronic switch to transfer the pulse signal voltage induced in the pickup coil from the input side to the output side keeping the pulse signal voltage of the outside at the same level as the inside. | 12-10-2015 |
20150362563 | READING CIRCUIT FOR A MAGNETIC FIELD SENSOR WITH SENSITITIVY CALIBRATION, AND RELATED READING METHOD - A reading circuit for a magnetic-field sensor, generating an electrical detection quantity as a function of a detected magnetic field and of a detection sensitivity, is provided with an amplification stage, which is coupled to the magnetic-field sensor and generates an output signal as a function of the electrical detection quantity. In particular, the reading circuit is provided with a calibration stage, integrated with the amplification stage and configured so as to control a feedback loop in such a way as to compensate a variation of the detection sensitivity with respect to a nominal sensitivity value. | 12-17-2015 |
20150369879 | MAGNETIC SENSOR ANNEALING USING A ROCKING FIELD - Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure. | 12-24-2015 |
20150369882 | MAGNETIC SUBSTANCE DETECTION DEVICE - A magnetic substance detection device includes elongated magnets and ferromagnetic thin film magnetoresistance elements. The magnets extend in parallel with a Y-axis direction and are magnetized opposite to each other in a Z-axis direction. The ferromagnetic thin film magnetoresistance elements have respective linear segments extending substantially along the Y-axis direction on a plane of a substrate disposed in a path of lines of magnetic force between the magnets and change their resistances in response to a change in a magnetic field directed in a direction orthogonal to the Y-axis direction in the plane of the substrate. The magnets apply bias magnetic fields lower in intensity than a saturated magnetic field of the ferromagnetic thin film magnetoresistance elements to the ferromagnetic thin film magnetoresistance elements, respectively, in the direction orthogonal to the Y-axis direction in the plane of the substrate. | 12-24-2015 |
20150377985 | GIANT MAGNETORESISTANCE ELEMENT AND CURRENT SENSOR USING THE SAME - A GMR element includes a fixed magnetic layer in which magnetization is fixed; a free magnetic layer in which magnetization is changed by an external magnetic field; and a spacer layer which is positioned between the fixed magnetic layer and the free magnetic layer, in which the free magnetic layer is formed by laminating a CoFe alloy and a CoFeB alloy. A current sensor uses the GMR element. | 12-31-2015 |
20150377986 | MAGNETORESISTIVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A magnetoresistive device includes a carrier, an xMR-sensor, a magnetic layer formed above an active xMR-region of the xMR-sensor and an insulating layer arranged between the xMR-sensor and the magnetic layer. | 12-31-2015 |
20160003923 | DIFFERENTIAL LATERAL MAGNETIC FIELD SENSOR SYSTEM WITH OFFSET CANCELLING AND IMPLEMENTED USING SILICON-ON-INSULATOR TECHNOLOGY - A differential magnetic field sensor system ( | 01-07-2016 |
20160018477 | MAGNETIC FIELD SENSOR - A magnetic field sensor using a thin-film field effect transistor configured to control sensitivity appropriately includes a semiconductor film, a drain electrode, a source electrode, a gate electrode, a first hall electrode, and a second hall electrode, in which a drain current passes through a channel region of the semiconductor film between the drain electrode and the source electrode according to a drain voltage applied to the drain electrode and a gate voltage applied to the gate electrode. A hall voltage is generated between the first hall electrode and the second hall electrode according to the drain current and a magnetic field present in the channel region. The gate voltage applied to the gate electrode is substantially higher than a threshold voltage and outside a low voltage range that is substantially lower than the threshold voltage. | 01-21-2016 |
20160018479 | Apparatus and Method for Sensing a Magnetic Field Using Arrays of Magnetic Sensing Elements - An apparatus includes circuits and a module configured to determine an external magnetic field based on a parameter of each circuit. Each circuit includes an array of magnetic tunnel junctions partitioned into subarrays. The magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The subarrays are connected in series. Each magnetic tunnel junction includes a storage layer having a storage magnetization and a sense layer having a sense magnetization. Each magnetic tunnel junction is configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to an external magnetic field. The parameter of each circuit varies based on a combined impedance of the multiple magnetic tunnel junctions. The module is implemented in at least one of a memory or a processing device. | 01-21-2016 |
20160018480 | Apparatus and Method for Sensing a Magnetic Field Using Subarrays of Magnetic Field Sensing Elements for High Voltage Applications - An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and (2) the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, where the impedance of a subset of the plurality of rows in each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field. | 01-21-2016 |
20160018481 | Apparatus and Method for Sensing a Magnetic Field Using Subarrays of Magnetic Sensing Elements - An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, wherein impedance of one or more of the magnetic tunnel junctions in each of the plurality of rows of each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field. | 01-21-2016 |
20160018482 | Apparatus and Method for Layout of Magnetic Field Sensing Elements in Sensors - An apparatus includes groups of magnetic tunnel junctions, where the magnetic tunnel junctions in each group are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The apparatus further includes a first conductive layer including conductive interconnects, a second conductive layer including straps, and a third conductive layer including field lines, each field line configured to generate a magnetic field for configuring an operating point of a corresponding subset of the magnetic tunnel junctions in each group based on a current flow through each field line. The magnetic tunnel junctions in each group are disposed between and connected to a corresponding one of the conductive interconnects and a corresponding one of the straps. The second conductive layer is disposed between the first conductive layer and the third conductive layer. | 01-21-2016 |
20160018483 | Apparatus, System, and Method for Sensing Communication Signals with Magnetic Field Sensing Elements - An apparatus includes a circuit including multiple magnetic tunnel junctions, the circuit configured to convert a quadrature modulated magnetic field to a quadrature modulated electrical signal, each magnetic tunnel junction including a storage layer having a storage magnetization and a sense layer having a sense magnetization, each magnetic tunnel junction being configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to the quadrature modulated magnetic field. The apparatus further includes a module configured to demodulate the quadrature modulated electrical signal to recover a signal encoded in the quadrature modulated magnetic field. | 01-21-2016 |
20160025819 | XMR SENSOR DEVICE - Sensor devices and methods are provided where a second magnetoresistive sensor stack is provided on top of a first magnetoresistive sensor stack. | 01-28-2016 |
20160047865 | Patterned MR Device with Controlled Shape Anisotropy - A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. Side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a free layer top surface, or below a plane that includes the magnetic sensor bottom surface. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor. Moreover, each side stripe may have a tapered edge such that the side stripes have increasing thickness with increasing distance from the magnetic sensor. | 02-18-2016 |
20160047866 | XMR ANGLE SENSORS - Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions. | 02-18-2016 |
20160084674 | Apparatus and Method for Magnetic Sensor Based Surface Shape Analysis - A device has magnetic sensors and magnets in an array on a flexible substrate. Each magnetic sensor is sensitive to immediately proximate magnets. At least one controller evaluates magnetic sensor signals from the magnetic sensors produced in response to deformation of the flexible substrate. | 03-24-2016 |
20160084920 | APPARATUS AND METHOD FOR RESET AND STABILIZATION CONTROL OF A MAGNETIC SENSOR - A magnitude and direction of at least one of a reset current and a second stabilization current (that produces a reset field and a second stabilization field, respectively) is determined that, when applied to an array of magnetic sense elements, minimizes the total required stabilization field and reset field during the operation of the magnetic sensor and the measurement of the external field. Therefore, the low field sensor operates optimally (with the highest sensitivity and the lowest power consumption) around the fixed external field operating point. The fixed external field is created by other components in the sensor device housing (such as speaker magnets) which have a high but static field with respect to the low (earth's) magnetic field that describes orientation information. | 03-24-2016 |
20160084922 | MAGNETIC FIELD SENSOR - A magnetic field sensor, comprising a suspending mass block, a group of Y direction displacement sensors, a group of Z direction displacement sensors and a power supply; wherein the mass block, the Y direction displacement sensors and the Z direction displacement sensors respectively comprise a plurality of metal layers and a dielectric layer between two metal layers. In the mass block, a region corresponding to the Y direction displacement sensors and a region corresponding to the Z direction displacement sensors respectively comprise at least two metal layers connected by a via. The Y direction displacement sensors include two electrodes, each comprising at least two metal layers connected by a via; the Z direction displacement sensor includes two electrodes, each comprising at least two metal layers connected by a via; and the power supply provides a current flowing through the mass block selectively in X or Y direction. | 03-24-2016 |
20160084923 | MAGNETIC HEAD FOR DETECTING MAGNETIC FIELD ON SURFACE OF MAGNETIC PATTERN BASED ON MAGNETO-RESISTANCE TECHNOLOGY - A magnetic head for detecting a magnetic field on the surface of a magnetic pattern based on a magneto-resistance technology comprises a support ( | 03-24-2016 |
20160091461 | IDENTIFICATION OF MOLECULES BASED ON FREQUENCY RESPONSES USING ELECTROMAGNETIC WRITE-HEADS AND MAGNETO-RESISTIVE SENSORS - The invention relates to the identification of molecules using electromagnetic write-heads and magneto-resistive sensors. In one embodiment, an electromagnetic write-head magnetically excites a molecule with an alternating magnetic field. A magneto-resistive sensor measures the resonant response of the magnetically excited molecule. A processor compares the resonant response to a table of known responses of different molecules to identify the chemical composition of the molecule based in whole or in part on the comparison. | 03-31-2016 |
20160097827 | XMR-SENSOR AND METHOD FOR MANUFACTURING THE XMR-SENSOR - An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area. | 04-07-2016 |
20160097828 | SINGLE-PACKAGE BRIDGE-TYPE MAGNETIC FIELD SENSOR - A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually antiparallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding. | 04-07-2016 |
20160109534 | MAGNETIC FIELD SENSOR FOR THE DETECTION OF AT LEAST TWO MAGNETIC FIELD COMPONENTS - A magnetic field sensor includes first and second sensors for detecting first and second magnetic components according to first and second directions. Each sensor includes a flux concentrator including first and second magnetic parts, an air gap between the parts, and a magnetoresistive element in the air gap. Each magnetoresistive element includes a reference layer having a fixed magnetisation direction, the fixed magnetisation direction of the first and second sensors being substantially identical, and a sensitive layer having a variable magnetisation direction, the variable magnetisation direction of the first sensor when the first sensor is in a state of rest being substantially identical to the variable magnetisation direction of the second sensor when the second sensor is in the state of rest. The air gaps of first and second sensor are oriented parallel to a direction XY which is, at ±15°, the bisector of the first and second directions. | 04-21-2016 |
20160109535 | SINGLE-CHIP BRIDGE-TYPE MAGNETIC FIELD SENSOR - A single-chip magnetic field sensor bridge, comprising a substrate, a reference arm, a sensing arm, shielding structures, and wire bond pads is disclosed. The reference arm and the sense arm respectively comprise at least two rows/columns of reference element strings and sense element strings formed by electrically connecting one or more identical magnetoresistive sensing elements. The reference element strings and the sense element strings are alternately arranged. The magnetoresistive sensing elements are AMR, GMR or TMR sensing elements. The reference element strings are provided with shielding structures thereon, and the sensing element strings are located in gaps between two adjacent shielding structures. The shielding structures are arrays of elongated strips composed of permalloy or another soft ferromagnetic material. The sensors can be implemented as one of three different bridge structures, called a quasi-bridge, a half-bridge, or a full-bridge. This single-chip magnetic field sensor bridge has the advantages of small size, low cost, high sensitivity, small offset, good linearity, and good temperature stability. | 04-21-2016 |
20160109536 | Magnetoresistive Sensor Module and Method for Manufacturing the Same - In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement. | 04-21-2016 |
20160109537 | MAGNETO RESISTIVE DEVICE - A magneto resistive device comprises a plurality of magneto resistive sensing elements. Each of the plurality of magneto resistive sensing elements comprises a free layer and a reference layer. The free layer has a rounded convex contour with an aspect ratio of 2 or greater. | 04-21-2016 |
20160124054 | Magnetic Field Sensor and Electronic Circuit That Pass Amplifier Current Through a Magnetoresistance Element - Electronic circuits used in magnetic field sensors use transistors for passing a current through the transistors and also through a magnetoresistance element. | 05-05-2016 |
20160131683 | MAGNETIC SENSOR AND ELECTRICAL CURRENT SENSOR USING THE SAME - A magnetic sensor has a first tube-shaped bias magnet and a first magnetic sensor element. The first tube-shaped bias magnet has a bottom face, a top face facing the bottom face, and an outer side surface and an inner side surface both located between the bottom face and the top face, and includes an N pole formed by magnetizing one of the bottom face and the top face and an S pole formed by magnetizing a remaining one of the bottom face and the top face. The first magnetic sensor element is located in an inner space surrounded by a plane including the bottom face, a plane including the top face, and the inner side surface. The magnetic sensor can detect intensity of an external magnetic field with high accuracy. | 05-12-2016 |
20160146907 | MAGNETIC FIELD SENSOR DEVICE - A magnetic field sensor apparatus is provided for measuring one magnetic field vector component H | 05-26-2016 |
20160161529 | Current Detection Circuit and Magnetic Detection Device Provided with Same - A current detection circuit includes a coil that is constituted by a metal wiring formed on a semiconductor substrate, a resistor that is provided in a position near the coil on the semiconductor substrate, constituted by a metal wiring formed on the semiconductor substrate, which is made of a metal material being same as that of the coil, and arranged so as to prevent any magnetic field from being generated due to a current flowing in the resistor, an output circuit that outputs currents in accordance with a resistance ratio between the coil and the resistor to the coil and the resistor correspondingly through a common terminal, and a detection circuit that detects the current flowing in the resistor to thereby detect the current flowing in the coil. | 06-09-2016 |
20160161574 | SOFT SWITCHING OF MAGNETIZATION IN A MAGNETORESISTIVE SENSOR - A magnetoresistive sensor may include a stripe portion comprising magnetoresistive material. The stripe portion may have a stripe width extending along a first axis from a first stripe edge of the stripe portion to a second stripe edge of the stripe portion, a length along a second axis that is substantially perpendicular to the first axis, a first end, and a second end. The first end and the second end may be positioned at opposite ends of the stripe portion along the second axis. The magnetoresistive sensor may include an extension portion comprising magnetoresistive material. The extension portion may be positioned at the first end of the stripe portion, and may have an extension width along the first axis. The extension width may be larger than the stripe width, such that the extension portion extends beyond the first stripe edge and the second stripe edge. | 06-09-2016 |
20160169982 | SINGLE CHIP PUSH-PULL BRIDGE-TYPE MAGNETIC FIELD SENSOR | 06-16-2016 |
20160169985 | MULTICOMPONENT MAGNETIC FIELD SENSOR | 06-16-2016 |
20160169987 | SINGLE MAGNETORESISTOR TMR MAGNETIC FIELD SENSOR CHIP AND MAGNETIC CURRENCY DETECTOR HEAD | 06-16-2016 |
20160187433 | MAGNETISM DETECTION DEVICE - Provided is a magnetism detection device by which it is possible to achieve a reduction in size and an increase in accuracy. A magnetism detection device includes: a magneto-impedance element; a magnetic field direction changing body; and a substrate that is formed of a semiconductor material and has an element arrangement recessed portion bottom surface and a back surface that face mutually opposite sides in a thickness direction, and a through-hole that reaches the element arrangement recessed portion bottom surface and the back surface and has a cross-sectional dimension that increases toward the main surface starting from the element arrangement recessed portion bottom surface. The magneto-impedance element is mounted on the element arrangement recessed portion bottom surface, and the magnetic field direction changing body is accommodated in the through-hole. | 06-30-2016 |
20160195592 | INTELLIGENT FIELD SHAPING FOR MAGNETIC SPEED SENSORS | 07-07-2016 |
20160202328 | MAGNETIC FIELD STRENGTH AND MAGNETIC FIELD ANGLE DETECTION SYSTEM IN MAGNETORESISTIVE SENSORS | 07-14-2016 |
20160202329 | AMR-TYPE INTEGRATED MAGNETORESISTIVE SENSOR FOR DETECTING MAGNETIC FIELDS PERPENDICULAR TO THE CHIP | 07-14-2016 |
20160202330 | MAGNETIC SENSOR ELEMENT | 07-14-2016 |
20160252591 | METHOD FOR MEASURING THREE-DIMENSIONAL MAGNETIC FIELDS | 09-01-2016 |
20160377689 | Multi-Functional Interconnect Module and Carrier with Multi-Functional Interconnect Module Attached Thereto - An interconnect module includes a metal clip having a first end section, a second end section and a middle section extending between the first and the second end sections. The first end section is configured for external attachment to a bare semiconductor die or packaged semiconductor die attached to a carrier or to a metal region of the carrier. The second end section is configured for external attachment to a different metal region of the carrier or to a different semiconductor die or packaged semiconductor die attached to the carrier. The module further includes a magnetic field sensor secured to the metal clip. The magnetic field sensor is operable to sense a magnetic field produced by current flowing through the metal clip. The interconnect module can be used to form a direct electrical connection between components and/or metal regions of a carrier to which the module is attached. | 12-29-2016 |
20160377691 | INTEGRATED AMR MAGNETORESISTOR WITH LARGE SCALE - An integrated AMR magnetoresistive sensor has a magnetoresistor, a set/reset coil and a shielding region arranged on top of each other. The set/reset coil is positioned between the magnetoresistor and the shielding region. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape having a length in a first direction parallel to the preferential magnetization direction and a width in a second direction perpendicular to the first direction. The set/reset coil has at least one stretch extending transversely to the magnetoresistive strip. The shielding region is a ferromagnetic material and has a width in the second direction greater than the width of the magnetoresistive strip so as to attenuate the external magnetic field traversing the magnetoresistive strip and increase the sensitivity scale of the magnetoresistive sensor. | 12-29-2016 |
20160380181 | Semiconductor Package with Integrated Magnetic Field Sensor - A semiconductor package includes a semiconductor die attached to a substrate and a magnetic field sensor included as part of the same semiconductor package as the semiconductor die and positioned in close proximity to a current pathway of the semiconductor die so that the magnetic field sensor can sense a magnetic field produced by current flowing in the current pathway. The magnetic field sensor includes a first magnetic field sensing component galvanically isolated from the current pathway and positioned so that a magnetic field produced by current flowing in the current pathway impinges on the first magnetic field sensing component in a first direction. The magnetic field sensor also includes a second magnetic field sensing component galvanically isolated from the current pathway and positioned so that the magnetic field impinges on the second magnetic field sensing component in a second direction different than the first direction. | 12-29-2016 |
20190146042 | Microchip for the detection of weak electrical and magnetic fields. | 05-16-2019 |
20220137157 | MAGNETIC SENSOR AND ITS MANUFACTURING METHOD - An object of the present invention is to provide a magnetic sensor capable of, while suppressing an increase in manufacturing cost, controlling the gap size so as to make the gap between the element formation surface of the sensor chip and the magnetism collecting member as small as possible and to make variations among products fall within a certain range and a manufacturing method for such a magnetic sensor. A magnetic sensor includes a sensor chip | 05-05-2022 |