Entries |
Document | Title | Date |
20080211082 | Semiconductor device and a method of manufacturing the same - A semiconductor device and method having high output and having reduced external resistance is reduced and improved radiating performance. A MOSFET ( | 09-04-2008 |
20080217758 | PACKAGE SUBSTRATE STRIP, METAL SURFACE TREATMENT METHOD THEREOF AND CHIP PACKAGE STRUCTURE - A package substrate strip having a reserved plating bar and a metal surface treatment method thereof are provided. The metal surface treatment method forms a conductive layer connecting the reserved plating bar and bonding pads of the package substrate stripe and further forms an isolating layer covering the conductive layer. By original plating bars and the reserved plating bar, an anti-oxidation layer can be simultaneously formed on finger contacts, first ball pads electrically connected to the finger contacts, and second ball pads electrically connected to the bonding pads. The package substrate strip and the method for metal surface treatment thereof can simplify manufacturing process, reduce production cost, and improve production efficiency and yield. Furthermore, a chip package applying the package substrate strip is also provided. | 09-11-2008 |
20080224299 | BASE SUBSTRATE FOR CHIP SCALE PACKAGING - A base substrate for chip scale package includes a carrier member made of electrical conductive metals with a first through opening; an active member laminated by a base layer made of electrical conductive metal and an intermediate layer made of electrical insulating or dielectric material, the active member having a through opening with a diameter larger that the diameter of the through opening of the base metal member; the active member being coupled with the carrier member in such a way that the intermediate layer is adhered to an upper surface of the carrier member, and these through openings are aligned to define a shoulder around the through opening of the base metal plate. | 09-18-2008 |
20080283998 | ELECTRONIC SYSTEM WITH EXPANSION FEATURE - An electronic system is provided including forming a substrate having a radiating patterned pad, mounting an electrical device having an external interconnect over the radiating patterned pad with the external interconnect offset from the radiating patterned pad, and aligning the external interconnect with the radiating patterned pad. | 11-20-2008 |
20080315396 | Mold compound circuit structure for enhanced electrical and thermal performance - According to an exemplary embodiment, an overmolded semiconductor package includes at least one semiconductor die situated over a package substrate. The overmolded semiconductor package further includes a mold compound overlying the at least one semiconductor die and the package substrate and having a top surface. The overmolded semiconductor package further includes a first patterned conductive layer situated on the top surface of the mold compound. The overmolded semiconductor package can further include at least one conductive interconnect situated in the mold compound, where the at least one conductive interconnect is electrically connected to the first patterned conductive layer. The first patterned conductive layer can include at least one passive component. | 12-25-2008 |
20090008767 | INTEGRATED CIRCUIT PACKAGE WITH SPUTTERED HEAT SINK FOR IMPROVED THERMAL PERFORMANCE - An integrated circuit package includes an integrated circuit die having a circuit surface and a back surface opposite the circuit surface. A layer of ductile material is deposited on the back surface of the integrated circuit die. | 01-08-2009 |
20090014861 | Microelectronic package element and method of fabricating thereof - Microelectronic package elements and packages having dielectric layers and methods of fabricating such elements packages are disclosed. The elements and packages may advantageously be used in microelectronic assemblies having high routing density. | 01-15-2009 |
20090045500 | Power semiconductor module with a connected substrate carrier and production method therefor - A power semiconductor module includes a housing, a substrate carrier with a circuit thereon and electrical connection elements extending therefrom. The carrier has a cutout between its inner surface (facing the interior of the module) and its outer surface. The cutout is smaller at the inner surface than at the outer surface. The housing has an extension that reaches into the cutout and may be deformed to form a riveted connection. The method comprises: forming a housing with at least one extension which extends towards the exterior of the module, wherein the extension projects through the cutout and beyond the outer surface of the carrier; and deforming the end of the extension so that it widens and forms a riveted connection and at the same time lies below the outer surface of the carrier. | 02-19-2009 |
20090065926 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a base plate made of a material including at least a thermosetting resin, and having an opening, a vertical conductor filled and provided in the opening of the base plate, at least one semiconductor construct having a semiconductor substrate and a plurality of external connection electrodes provided on one side of the semiconductor substrate, and an insulating layer secured to and provided on a periphery of the semiconductor construct. The insulating layer is secured to the base plate, and the external connection electrodes of the semiconductor construct are bonded to the vertical conductor. | 03-12-2009 |
20090127692 | METHOD OF CONNECTING A SEMICONDUCTOR PACKAGE TO A PRINTED WIRING BOARD - A method of electrically connecting a bump array package to a wiring board, comprising the steps of:
| 05-21-2009 |
20090140411 | RESIN-SEALED SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, BASE MATERIAL FOR THE SEMICONDUCTOR DEVICE, AND LAYERED AND RESIN-SEALED SEMICONDUCTOR DEVICE - The present invention provides a resin-sealed semiconductor device, which includes a semiconductor element; a plurality of terminal members, each surrounding the semiconductor element and including an external terminal portion, an internal terminal portion and a connecting portion; bonding wires, each connecting the semiconductor element with the internal terminal portion; and a resin-sealing portion sealing the semiconductor element, terminal members and bonding wires. Each terminal member is composed of an inner thinned portion forming the internal terminal portion and an outer thickened portion forming the external terminal portion. A rear face of each internal terminal portion, and a front face, a rear face and an outer side face of each external terminal portion are exposed to the outside from the resin-sealing portion, respectively. | 06-04-2009 |
20090166843 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip including a first conducting element, and a second conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a first location. It further includes a third conducting element arranged outside the semiconductor chip and electrically connected to the first conducting element at a second location, and a fourth conducting element arranged outside the semiconductor chip. A vertical projection of the fourth conducting element on the chip crosses the first conducting element between the first location and the second location. | 07-02-2009 |
20090174059 | METHOD AND MANUFACTURE OF SILICON BASED PACKAGE AND DEVICES MANUFACTURED THEREBY - A Silicon Based Package (SBP) is formed starting with a thick wafer, which serves as the base for the SBP, composed of silicon which has a first surface and a reverse surface which are planar. Then form an interconnection structure including metal capture structures in contact with the first surface and multilayer conductor patterns over the first surface. Form a temporary bond between the SBP and a wafer holder, with the wafer holder being a rigid structure. Thin the reverse side of the wafer to a desired thickness to form an Ultra Thin Silicon Wafer (UTSW) for the SBP. Form via holes with tapered or vertical sidewalls, which extend through the UTSW to reach the metal capture structures. Then form metal pads in the via holes which extend through the UTSW, making electrical contact to the metal capture structures. Then bond the metal pads in the via holes to pads of a carrier. | 07-09-2009 |
20090189274 | TAPE WIRING SUBSTRATE AND TAPE PACKAGE USING THE SAME - A tape wiring substrate may have dispersion wiring patterns. The dispersion wiring patterns may be provided between input/output wiring pattern groups to compensate for the intervals therebetween. Connecting wiring patterns may be configured to connect the dispersion wiring patterns to a first end of the adjacent input/output wiring pattern. | 07-30-2009 |
20090194865 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD FOR DETECTING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP PACKAGE - A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness. | 08-06-2009 |
20090212415 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH EXTERNAL INTERCONNECTS WITHIN A DIE PLATFORM - The present invention provides an integrated circuit package system comprising: attaching a die platform to an integrated circuit die; mounting the integrated circuit die over an external interconnect with a bottom side of the external interconnect partially within the die platform; connecting the integrated circuit die and the external interconnect; and forming an encapsulation over the integrated circuit die with the external interconnect partially exposed. | 08-27-2009 |
20090236727 | WIRING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A wiring substrate is provided. The wiring substrate includes a multilayer wiring structure and a stiffener. The multilayer wiring structure includes: a plurality of insulating layers; a plurality of wiring patterns; and a plurality of chip mounting pads which are electrically connected to the wiring patterns and on which a semiconductor chip is flip-chip mounted. The stiffener is provided on a portion of the multilayer wiring structure, which is outside of a mounting area on which the semiconductor chip is flip-chip mounted. A thermal expansion coefficient of the stiffener is substantially equal to that of the semiconductor chip. | 09-24-2009 |
20090236728 | Semiconductor device - A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad. | 09-24-2009 |
20090236729 | MELTING TEMPERATURE ADJUSTABLE METAL THERMAL INTERFACE MATERIALS AND PACKAGED SEMICONDUCTORS INCLUDING THEREOF - A melting temperature adjustable metal thermal interface material (TIM) and a packaged semiconductor including thereof are provided. The metal TIM includes about 20-98 wt % of In, about 0.03-4 wt % of Ga, and at least one element of Bi, Sn, Ag and Zn. The metal TIM has an initial melting temperature between about 60-144° C. | 09-24-2009 |
20090243080 | Flip Chip Interconnection Structure with Bump on Partial Pad and Method Thereof - A semiconductor package includes a semiconductor die with a plurality of solder bumps formed on bump pads. A substrate has a plurality of contact pads each with an exposed sidewall. A solder resist is disposed opening over at least a portion of each contact pad. The solder bumps are reflowed to metallurgically and electrically connect to the contact pads. Each contact pad is sized according to a design rule defined by SRO+2*SRR−2X, where SRO is the solder resist opening, SRR is a solder registration for the manufacturing process, and X is a function of a thickness of the exposed sidewall of the contact pad. The value of X ranges from 5 to 20 microns. The solder bump wets the exposed sidewall of the contact pad and substantially fills an area adjacent to the exposed sidewall. The contact pad can be made circular, rectangular, or donut-shaped. | 10-01-2009 |
20090250804 | LEADFRAME-BASED IC-PACKAGE WITH SUPPLY-REFERENCE COMB - An IC package includes a leadframe-diepad ( | 10-08-2009 |
20090261470 | CHIP PACKAGE - A chip package comprising a carrier, a chip, a plurality of first conductive elements, an encapsulation, and a conductive film is provided. The carrier has a carrying surface and a back surface opposite to the carrying surface. Furthermore, the carrier has a plurality of common contacts in the periphery of the carrying surface. The chip is disposed on the carrying surface and electrically connected to the carrier. In addition, the first conductive elements are disposed on the common contacts respectively. The encapsulation is disposed on the carrying surface and encapsulating the chip. Moreover, the conductive film is disposed over the encapsulation and the first conductive elements, so as to electrically connect with the common contacts via the first conductive elements. A process for fabricating the chip package is further provided. The chip package is capable of preventing the EMI problem and thus provides superior electrical performance. | 10-22-2009 |
20090267216 | INKJET PRINTED LEADFRAMES - Apparatuses and methods for inkjet printing electrical interconnect patterns such as leadframes for integrated circuit devices are disclosed. An apparatus for packaging includes a thin substrate adapted for high temperature processing, and an attach pad and contact regions that are inkjet printed to the thin substrate using a metallic nanoink. The nanoink is then cured to remove liquid content. The residual metallic leadframe or electrical interconnect pattern has a substantially consistent thickness of about 10 to 50 microns or less. An associated panel assembly includes a conductive substrate panel having multiple separate device arrays comprising numerous electrical interconnect patterns each, a plurality of integrated circuit devices mounted on the conductive substrate panel, and a molded cap that encapsulates the integrated circuit devices and associated electrical interconnect patterns. The molded cap is of substantially uniform thickness over each separate device array, and extends into the space between separate device arrays. | 10-29-2009 |
20090267217 | Semiconductor device - A semiconductor device ( | 10-29-2009 |
20090267218 | Heat Extraction from Packaged Semiconductor Chips, Scalable with Chip Area - A semiconductor device ( | 10-29-2009 |
20090267219 | ULTRA-THIN CHIP PACKAGING - A packaging method involves attaching a first chip to a stable base, forming contact pads at locations on the stable base, applying a medium onto the stable base such that it electrically insulates sides of the first chip, forming electrical paths on the medium, attaching a second chip to the first chip to form an assembly, and removing the stable base. A package has at least two chips electrically connected to each other, at least one contact pad, an electrically conductive path extending from the contact pad to a contact point on at least one of the chips, a planarizing medium, and a coating material on top of the planarizing medium. | 10-29-2009 |
20090273072 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor device eliminated of the effect of an adhesive used in assembling upon the semiconductor chip. According to the semiconductor device, the semiconductor device includes a board, a semiconductor chip provided on and contacting with the board, and a plurality of wires each having both ends firmly fixed to a point close to a peripheral edge of the semiconductor chip and a point on the board close to a peripheral edge respectively. The semiconductor chip is fixed on the board by means of the wires. | 11-05-2009 |
20090273073 | CONNECTING STRUCTURE FOR FLIP-CHIP SEMICONDUCTOR PACKAGE, BUILD-UP LAYER MATERIAL, SEALING RESIN COMPOSITION, AND CIRCUIT BOARD - The invention provides a connecting structure for a flip-chip semiconductor package in which cracking and delamination are inhibited or reduced to improve reliability, and in which the potential range of designs is expanded for the inner circuitry of circuit boards and the inductance is reduced. The invention is a connecting structure for a flip-chip semiconductor package, including: a circuit board having a core layer and at least one build-up layer; a semiconductor element connected via metal bumps to the circuit board; and a sealing resin composition with which gaps between the semiconductor element and circuit board are filled, wherein a cured product of the sealing resin composition has a glass transition temperature between 60° C. and 150° C. and a coefficient of linear expansion from room temperature to the glass transition temperature being between 15 ppm/° C. and 35 ppm/° C., a cured product of the build-up layer has a the glass transition temperature of at least 170° C. and a coefficient of linear expansion in the in-plane direction up to the glass transition temperature being not more than 40 ppm/° C., and stacked vias are provided in the build-up layer on at least one side of the core layer. | 11-05-2009 |
20090273074 | Bond wire loop for high speed noise isolation - Semiconductor dies embodying electronic circuits are enclosed and protected within a package. To electrically access the die, the package includes external electrical leads which in turn connect to internal bond wires. The bond wires electrically connect the package to the die. As die density and circuit complexity increase, bond wire are placed in greater proximity. As a result, signal coupling between adjacent bond wires also increases and this coupling reduces circuit performance and input/output rates. A dissipation bond wire is provided adjacent the signal or supply bond wire acting as an aggressor. The dissipation bond wire has a first end connecting to the package and the second end connecting to the die or the package to form a conductive loop which dissipates unwanted coupling from an aggressor bond wire before the coupling couples into victim bond wire. The dissipation bond wire may be grounded. | 11-05-2009 |
20090278250 | Method of Semiconductor Packaging and/or a Semiconductor Package - The method includes forming a leadframe. The leadframe is directly bonded to the semiconductor chip. The leadframe is flexed and/or compressed in a mold cavity. The compressed leadframe and the chip are molded into a package. | 11-12-2009 |
20090283895 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a metal frame having a penetrating opening; a semiconductor chip provided in the opening; an insulating layer provided on the upper surface of the metal frame such that the insulating layer covers the upper surface, which is the circuit-formed surface of the semiconductor chip; an interconnect layer provided only on the upper-surface side of the metal frame with intervention of the insulating material and electrically connected to a circuit of the semiconductor chip; a via conductor provided on the upper surface of said semiconductor chip to electrically connect the circuit of the semiconductor chip and the interconnect layer; and a resin layer provided on the lower surface of the metal frame. | 11-19-2009 |
20090283896 | Package structure and method - A semiconductor die has a surface and an active region on the surface. A thick-film coating is applied to the surface of the semiconductor die to cover only a portion or entire of the active region before the semiconductor die is cut from a wafer. The thick-film coating reduces the stress to the semiconductor die. The thick-film coating does not cover the bonding pads of the semiconductor die to avoid influencing the bonding wires bonding to the boding pads. | 11-19-2009 |
20090289347 | CIRCUIT BOARD, LEAD FRAME, SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: an element mounting member including a first electrode; a semiconductor element mounted on the element mounting member and including a second electrode; and an interposer element mounted on the element mounting member with a first side of the interposer element facing one of a side of the semiconductor element. The interposer element is one of a triangle and a trapezoid in plan view, and includes: a first interposer electrode electrically connected to the second electrode via a first wire; a second interposer electrode electrically connected to the first electrode; and an internal interconnection electrically connecting the first interposer electrode and the second interposer electrode to each other. | 11-26-2009 |
20090302452 | MOUNTABLE INTEGRATED CIRCUIT PACKAGE-IN-PACKAGE SYSTEM - A mountable integrated circuit package-in-package system includes: providing an interface integrated circuit package system with a terminal having a plated bumped portion of an inner encapsulation; mounting the interface integrated circuit package system over a package carrier with the terminal facing away from the package carrier; connecting the package carrier and a pad extension of the terminal; and forming a package encapsulation over the interface integrated circuit package system with the terminal exposed. | 12-10-2009 |
20090315169 | FRAME AND METHOD OF MANUFACTURING ASSEMBLY - The frame ( | 12-24-2009 |
20090315170 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH EMBEDDED CIRCUITRY AND POST, AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a shaped platform with a conductive post; mounting the shaped platform with the conductive post over a temporary carrier; mounting an integrated circuit device over the temporary carrier; encapsulating the conductive post and the integrated circuit device; removing a portion of the shaped platform isolating the conductive post; and removing the temporary carrier. | 12-24-2009 |
20090321919 | SEMICONDUCTOR DEVICE - The semiconductor device | 12-31-2009 |
20100001392 | Semiconductor package - Provided is a semiconductor package including a substrate and a semiconductor chip formed on the substrate. The semiconductor chip may include a chip alignment mark on a surface of the semiconductor chip, and wiring patterns formed on a surface of the substrate, wherein the chip alignment mark is bonded to the wiring patterns. Accordingly, the surface area of the semiconductor chip may be reduced. | 01-07-2010 |
20100001393 | SEMICONDUCTOR DEVICE - A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, and an IF VCO for converting the frequency of a signal supplied from a baseband. A plurality of ball electrodes are provided on the back surface of the package substrate. The package substrate is provided with a first common GND wire for supplying a GND potential to each of the LNAs, with a second common GND wire for supplying the GND potential to the RF VCO, and with a third common GND wire for supplying the GND potential to the IF VCO. The first, second, and third common GND wires are separated from each other. | 01-07-2010 |
20100007007 | SEMICONDUCTOR PACKAGE - A semiconductor package includes: a semiconductor chip having a first surface, and a second surface that is opposite to the first surface and allows a semiconductor device to be formed thereon; bonding pads disposed on the second surface of the semiconductor chip; and a metal ion barrier layer disposed on the first surface of the semiconductor chip, and preventing metal ions from penetrating into the semiconductor chip through the first surface of the semiconductor chip. Accordingly, the semiconductor package can obtain a superior semiconductor device by minimizing moisture absorption and effectively blocking the penetration of metal ions. | 01-14-2010 |
20100007008 | BGA PACKAGE - A BGA package has an LSI package, a plurality of terminal pads arranged in a grid pattern on the rear surface of the LSI package, and solder balls for soldering the LSI package to a printed wiring board via the terminal pads. A plurality of the terminals pads located at each of the four corners of the outermost periphery of the LSI package form a group of first terminal pads, and each group of terminal pads is formed integrally as a reinforcing pad having a greater size than that of the other terminal pads. | 01-14-2010 |
20100007009 | SEMICONDUCTOR PACKAGE AND METHOD FOR PROCESSING AND BONDING A WIRE - A copper bonding wire includes a line portion and a non-spherical block portion. The non-spherical block portion is physically connected to the line portion, and the cross-sectional area of the non-spherical block portion is bigger than that of the line portion. | 01-14-2010 |
20100007010 | SEMICONDUCTOR PACKAGE, METHOD FOR ENHANCING THE BOND OF A BONDING WIRE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR PACKAGE - A wire bonding structure of a semiconductor package includes a bonding wire, a pad and a non-conductive adhesive material. The bonding wire includes a line portion and a block portion, wherein the block portion is physically connected to the line portion, and the sectional area of the block portion is bigger than that of the line portion. The pad is bonded to the block portion. The non-conductive adhesive material covers the pad and seals the whole block portion of the bonding wire. | 01-14-2010 |
20100007011 | SEMICONDUCTOR PACKAGE AND METHOD FOR PACKAGING A SEMICONDUCTOR PACKAGE - A wire bonding structure includes a chip and a bonding wire. The chip includes a base material, at least one first metallic pad, a re-distribution layer and at least one second metallic pad. The first metallic pad is disposed on the base material. The re-distribution layer has a first end and a second end, and the first end is electrically connected to the first metallic pad. The second metallic pad is electrically connected to the second end of the re-distribution layer. The bonding wire is bonded to the second metallic pad. | 01-14-2010 |
20100013081 | PACKAGING STRUCTURAL MEMBER - A structural member for use in semiconductor packaging is disclosed. The structural member includes a plurality of packaging regions to facilitate packaging dies in, for example, a wafer format. A packaging region has a die attach region surrounded by a peripheral region. A die is attached to the die attach region. In one aspect, the die attach region has opening through the surfaces of the structural member for accommodating a die. Through-vias disposed are in the peripheral regions. The structural member reduces warpage that can occur during curing of the mold compound used in encapsulating the dies. In another aspect, the die attach region does not have an opening. In such cases, the structural member serves as an interposer between the die and a substrate. | 01-21-2010 |
20100013082 | CHIP PACKAGE AND METHOD FOR FABRICATING THE SAME - A method for fabricating chip package includes providing a semiconductor chip with a metal bump, next adhering the semiconductor chip to a substrate using a glue material, next forming a polymer material on the substrate, on the semiconductor chip, and on the metal bump, next polishing the polymer material, next forming a patterned circuit layer over the polymer material and connected to the metal bump, and then forming a tin-containing ball over the patterned circuit layer and connected to the patterned circuit layer. | 01-21-2010 |
20100013083 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor package and a method of manufacturing the semiconductor package, and more particularly, a semiconductor package with bonding wires and a method of manufacturing the semiconductor package. The semiconductor package includes a substrate including a finger, at least one semiconductor chip stacked on the substrate, the semiconductor chip including a chip pad, and a wire which electrically connects the finger with the chip pad, wherein one end of the wire bonds with an upper surface and lateral surfaces of the finger. | 01-21-2010 |
20100025841 | Semiconductor device and method of designing the same - A semiconductor device contains an interposer having a square planar geometry, with length X for a first edge and length Y for a second edge orthogonal to the first edge, and a semiconductor chip and a dummy component disposed over the interposer, wherein the center of a first outer circumferential region, which surrounds the semiconductor chip over the interposer, and has length “a” for a third edge, and length “b” for a fourth edge, does not coincide with the center of the interposer, or equation X:Y=a:b is not satisfied, and the center of a second outer circumferential region, which surrounds the first outer circumferential region and the dummy components disposed over the interposer, and has length “x” for a fifth edge, and length “y” for a sixth edge, coincides with the center of the interposer, and equation X:Y=x:y is satisfied. | 02-04-2010 |
20100025842 | SEMICONDUCTOR MODULE AND SEMICONDUCTOR DEVICE - A semiconductor module includes an insulating resin layer, a wiring layer provided on one main surface S | 02-04-2010 |
20100032825 | Flange Package For A Semiconductor Device - In accordance with one or more embodiments, a flange package comprises a flange and an interposer having two or more fingers disposed in an interposer trench. The flange has a mold lock formed about a periphery of the interposer trench. A dielectric ring comprising a dielectric material is formed in the interposer trench, and in and around the periphery of the mold lock. A semiconductor die is disposed within the dielectric ring having gate pads and source pads formed on a first side, and having drain pads disposed on a second side of the die. The gate pads are coupled to the interposer and the source pads are coupled to the flange. A gate lead is coupled to the interposer and a drain lead is coupled to the drain pads. Other embodiments are disclosed. | 02-11-2010 |
20100032826 | SEMICONDUCTOR PACKAGE, CORE LAYER MATERIAL, BUILDUP LAYER MATERIAL, AND SEALING RESIN COMPOSITION - A flip-chip semiconductor package includes a circuit board having a core layer and at least one buildup layer, a semiconductor device connected to the circuit board through a metal bump, and a cured member that is made of a sealing resin composition and enclosed between the semiconductor device and the circuit board. The coefficient of linear expansion at 25 to 75° C. of the cured member is 15 to 35 ppm/° C., the glass transition temperature of at least one buildup layer is 170° C. or more, and the coefficient of linear expansion of at 25 to 75° C. of the at least one buildup layer in the planar direction is 25 ppm or less. A highly reliable flip-chip semiconductor package, buildup layer material, core layer material, and sealing resin composition can be provided by preventing cracks and inhibiting delamination. | 02-11-2010 |
20100032827 | PACKAGE STRUCTURE - Disclosed is a package structure including a semiconductor chip disposed in a core board having a first surface and an opposite second surface. The package structure further includes a plurality of first and second electrode pads disposed on an active surface and an opposite inactive surface of the semiconductor chip respectively, the semiconductor chip having a plurality of through-silicon vias for electrically connecting the first and second electrode pads. As a result, the semiconductor chip is electrically connected to the two sides of the package structure via the through-silicon vias instead of conductive through holes, so as to enhance electrical quality and prevent the inactive surface of the semiconductor chip from occupying wiring layout space of the second surface of the core board to thereby increase wiring layout density and enhance electrical performance. | 02-11-2010 |
20100038771 | INTEGRATED CIRCUIT PACKAGE WITH OPEN SUBSTRATE - A method of manufacturing an integrated circuit package includes: forming a substrate that includes: forming a core layer, forming vias in the core layer, and forming a conductive layer having a predetermined thickness on the core layer and having substantially twice the predetermined thickness in the vias; and forming connections between an integrated circuit die and the conductive layer. | 02-18-2010 |
20100044853 | SYSTEM-IN-PACKAGE WITH THROUGH SUBSTRATE VIA HOLES - The present invention relates to a system-in-package that comprises an integration substrate with a thickness of less than 100 micrometer and a plurality of through-substrate vias, which have an aspect ratio larger than 5. A first chip is attached to the integration substrate and arranged between the integration substrate and a support, which is suitable for mechanically supporting the integration substrate during processing and handling. The system-in-package can be fabricated according to the invention without a through-substrate-hole etching step. The large aspect ratio implies reduced lateral extensions, which allow increasing the integration density and decreasing lead inductances. | 02-25-2010 |
20100052147 | SEMICONDUCTOR DEVICE INCLUDING STRESS RELAXATION GAPS FOR ENHANCING CHIP PACKAGE INTERACTION STABILITY - By dividing a single chip area into individual sub-areas, a thermally induced stress in each of the sub-areas may be reduced during operation of complex integrated circuits, thereby enhancing the overall reliability of complex metallization systems comprising low-k dielectric materials or ULK material. Consequently, a high number of stacked metallization layers in combination with increased lateral dimensions of the semiconductor chip may be used compared to conventional strategies. | 03-04-2010 |
20100052148 | PACKAGE STRUCTURE AND PACKAGE SUBSTRATE - Provided are a package structure and a package substrate, including: a substrate body having a plurality of matrix-arranged electrical contact pads formed on at least one surface thereof, wherein a solder mask layer is formed on said surface and has a plurality of openings for exposing the electrical contact pads, respectively; a first electroless-plated layer disposed on the electrical contact pads, on the walls of the openings and at the peripheries of the openings; and a second electroless-plated layer disposed on the first electroless-plated layer, the first and second electroless-plated layers constituting a recessed electrical connection structure. By forming the even electroless-plated layers on the electrical contact pads. The invention overcomes drawbacks of the prior art, namely breakage of interfaces between solder bumps and electrical contact pads and even damage of the package structure otherwise caused by excessive differences in stress between the solder bumps. | 03-04-2010 |
20100052149 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a die pad having a top surface; a plurality of leads arranged around the die pad; a semiconductor chip having a main surface, a back surface, and a plurality of pads formed to the main surface, and having the back surface fixedly adhered in opposing contact with the top surface of the die pad; a plurality of wires electrically connecting the plurality of pads of the semiconductor chip and the plurality of leads, respectively; and a sealing body sealing the semiconductor chip and the plurality of wires. In addition, a plurality of groove portions are formed to a chip-mounting region opposing the back surface of the semiconductor chip in the top surface of the die pad, and an adhesive for fixedly adhering the semiconductor chip to the top surface of the die pad is buried in the plurality of groove portions. | 03-04-2010 |
20100052150 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH PACKAGE SUBSTRATE HAVING CORNER CONTACTS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit package system includes: forming a package substrate with a top substrate side and a bottom substrate side; forming a corner contact in a first corner of the bottom substrate side, the corner contact extending to a substrate edge of the package substrate; mounting an integrated circuit device over the top substrate side; connecting an electrical interconnect between the integrated circuit device and the top substrate side; and forming a package encapsulation over the top substrate side, the integrated circuit device, and the electrical interconnect. | 03-04-2010 |
20100052151 | Ball Grid Array Package Having One or More Stiffeners - Electrically and thermally enhanced die-up ball grid array (BGA) packages are described. A BGA package includes a stiffener, substrate, a silicon die, and solder balls. The die is mounted to the top of the stiffener. The stiffener is mounted to the top of the substrate. A plurality of solder balls are attached to the bottom surface of the substrate. A top surface of the stiffener may be patterned. A second stiffener may be attached to the first stiffener. The substrate may include one, two, four, or other number of metal layers. Conductive vias through a dielectric layer of the substrate may couple the stiffener to solder balls. An opening may be formed through the substrate, exposing a portion of the stiffener. The stiffener may have a down-set portion. A heat slug may be attached to the exposed portion of the stiffener. A locking mechanism may be used to enhance attachment of the heat slug to the stiffener. The heat slug may be directly attached to the die through an opening in the stiffener. | 03-04-2010 |
20100065959 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - A semiconductor package includes a wiring substrate having a connection pad on both surface sides respectively, and a supporting plate provided on one surface side of the wiring substrate and formed of an insulator in which an opening portion is provided in a portion corresponding to the connection pad. The external connection terminals (the lead pins, or the like) are provided on the connection pads on the surface of the wiring substrate on which the supporting plate is provided, and the semiconductor chip is mounted on the connection pads on the opposite surface. | 03-18-2010 |
20100072606 | Stacking Package Structure with Chip Embedded Inside and Die Having Through Silicon Via and Method of the same - The semiconductor device package structure includes a first die with a through silicon via (TSV) open from back side of the first die to expose bonding pads; a build up layer coupled between the bonding pads to terminal metal pads by the through silicon via (TSV); a substrate with a second die embedded inside and top circuit wiring and bottom circuit wiring on top and bottom side of the substrate respectively; and a conductive through hole structure coupled between the terminal metal pads to the top circuit wiring and the bottom circuit wiring. | 03-25-2010 |
20100072607 | TAB PACKAGE CONNECTING HOST DEVICE ELEMENT - A device is provided in which a glass panel having beveled edge is flexibly connected to a TAB package. The outer lead portions of the TAB package include an end portion of first width connected to a connection pattern on the glass panel, a terminal portion having a second width greater than the first width, and a transition portion having a width that varies between the first and second widths. When the TAB package is connected the transition portion of the respective outer lead portions are disposed over the beveled edge of the glass panel. | 03-25-2010 |
20100078800 | LOW COST FLEXIBLE SUBSTRATE - A low cost flexible substrate is described which comprises a thin metal foil and a layer of solder mask. The metal foil layer is patterned to create tracks and lands for solder bonding and/or wirebonding and the layer of solder mask is patterned to create openings for solder bonding, wirebonding and/or for mounting the die. The substrate may be used as a package substrate to create a packaged die or may be used as a replacement for more expensive flexible printed circuit boards. | 04-01-2010 |
20100078801 | CHIP PACKAGE STRUCTURE AND FABRICATING METHOD THREROF - A chip package structure including a chip, a lead frame, first bonding wires and second bonding wires is provided. The chip has an active surface and chip bonding pads disposed thereon. The lead frame is fixed on the chip and the lead frame includes inner leads, at least one bus bar, an insulating layer and transfer bonding pads. The bus bar is located between the chip bonding pads and the inner leads. The insulating layer is disposed on the bus bar and the transfer bonding pads are disposed thereon. The inner leads and the bus bar are located above the active surface. The chip and the insulating layer are located respectively on two opposite surfaces of the bus bar. The first bonding wires respectively connect the chip bonding pads and the transfer bonding pads. The second bonding wires respectively connect the transfer bonding pads and the inner leads. | 04-01-2010 |
20100078802 | CHIP PACKAGE STRUCTURE AND FABRICATING METHOD THREROF - A chip package structure including a chip, a lead frame, first bonding wires and second bonding wires is provided. The chip has an active surface and chip bonding pads disposed thereon. The lead frame is fixed on the chip and the lead frame includes inner leads, at least one bus bar, an insulating layer and transfer bonding pads. The bus bar is located between the chip bonding pads and the inner leads. The insulating layer is disposed on the bus bar and the transfer bonding pads are disposed thereon. The inner leads and the bus bar are located above the active surface. The chip and the insulating layer are located respectively on two opposite surfaces of the bus bar. The first bonding wires respectively connect the chip bonding pads and the transfer bonding pads. The second bonding wires respectively connect the transfer bonding pads and the inner leads. | 04-01-2010 |
20100090330 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a thin semiconductor device using a thin metal wire and having a low top portion. The semiconductor device of the present invention has a structure in which a bonding pad | 04-15-2010 |
20100090331 | SEMICONDUCTOR DIE PACKAGE INCLUDING MULTIPLE DIES AND A COMMON NODE STRUCTURE - A semiconductor die package capable of being mounted to a motherboard is disclosed. The semiconductor die package includes a substrate, and a first semiconductor die mounted on the substrate, where the first semiconductor die includes a first vertical device comprising a first input region and a first output region at opposite surfaces of the first semiconductor die. The semiconductor die package includes a second semiconductor die mounted on the substrate, where second semiconductor die comprises a second vertical device comprising a second input region and a second output region at opposite surfaces of the second semiconductor die. A substantially planar conductive node clip electrically communicates the first output region in the first semiconductor die and the second input region in the second semiconductor die. The first semiconductor die and the second semiconductor die are between the substrate and the conductive node clip. | 04-15-2010 |
20100090332 | CERAMIC CHIP ASSEMBLY - A ceramic chip assembly is provided. The ceramic chip assembly includes a ceramic base, a plurality of external electrodes, a pair of cylindrical metal lead wires, and an insulating protection material. The ceramic base has electrical characteristics of a semiconductor. The pair of external electrodes is oppositely formed on both side surfaces of the ceramic base, respectively. The cylindrical metal lead wire has one end thereof electrically and mechanically connected to the external electrodes by an electrical conductive adhesive, respectively, and has an external diameter identical to or greater than the thickness of the ceramic base. The insulating protection material includes a pair of insulating films and an insulating coating layer. | 04-15-2010 |
20100096743 | Input/output package architectures, and methods of using same - A high-speed I/O trace is part of an I/O package architecture for an integrated circuit package substrate. The integrated circuit package substrate includes an integrated heat spreader footprint on a die-side and the I/O trace to couple with an IC device to be disposed inside the IHS footprint. The I/O trace includes a pin-out terminal outside the IHS footprint to couple to an IC device to be disposed outside the IHS footprint. The high-speed I/O trace can sustain a data flow rate from a processor in a range from 5 gigabits per second (Gb/s) to 40 Gb/s. | 04-22-2010 |
20100102435 | METHOD AND APPARATUS FOR REDUCING SEMICONDUCTOR PACKAGE TENSILE STRESS - A semiconductor package is provided having reduced tensile stress. The semiconductor package includes a package substrate and a semiconductor die. The semiconductor die is coupled electrically and physically to the package substrate and includes a stress relieving layer incorporated therein. The stress relieving layer has a predetermined structure and a predetermined location within the semiconductor die for reducing tensile stress of the semiconductor package during heating and cooling of the semiconductor package. | 04-29-2010 |
20100102436 | SHRINK PACKAGE ON BOARD - A method of forming a device is disclosed. The method includes providing a printed circuit board substrate having a die attach region on a first surface of the substrate. The method also includes attaching a die to a die attach region. The die is electrically coupled to first land pads disposed on the first surface at the periphery of the die attach region. A cap is formed in a target area by a top gate process to produce a cap with an even surface. The cap covers the die and leaves at least the first land pads exposed. | 04-29-2010 |
20100102437 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package includes a semiconductor substrate having a semiconductor device arranged on one surface thereof; a cap substrate having one surface that opposes the one surface of the semiconductor substrate via a gap; a spacer that is arranged between the one surface of the semiconductor substrate and the one surface of the cap substrate, and that joins the semiconductor substrate and the cap substrate; and a filter that is provided on the cap substrate so as to overlap with the semiconductor device without overlapping with the spacer. The semiconductor package and method of manufacture can suppress exfoliation of the filter caused by chipping during the dicing step. | 04-29-2010 |
20100109145 | SEALED BALL GRID ARRAY PACKAGE - According to an aspect of the invention, there is provided an electrical package device comprising: a first substrate and a second substrate enclosing a first electric component; the second substrate supporting a second electric component, a plurality of connectors for mechanically connecting said first and second substrates in a stacked arrangement; and a seal provided between said first and second substrates at a distance from said first electric component; wherein said first electric component is electrically connected to said second electric component by connecting circuitry comprising said connectors; and wherein said connectors are provided in said seal. Preferably, said seal comprises a no flow resin material. | 05-06-2010 |
20100109146 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate; and a chip formed on the substrate and electrically connected to the substrate by a wire. The chip includes a wiring layer electrically connected to the wire; and a protective layer formed on the wiring layer. The wiring layer includes a wiring portion having the protective layer formed in an upper layer thereof and being electrically connected to another layer at a lower layer thereof; a bonding portion connected to one end of the wire at an exposed surface thereof, the exposed surface not having the protective layer formed in an upper layer thereof; and a connecting portion configured to join the wiring portion and the bonding portion. The connecting portion includes an etched portion formed by digging out the wiring layer. | 05-06-2010 |
20100109147 | Less expensive high power plastic surface mount package - A high power surface mount package including a thick bond line of solder interposed between the die and a heatsink, and between the die and a lead frame, wherein the lead frame has the same coefficient of thermal expansion as the heatsink. In one preferred embodiment, the heatsink and the lead frame are comprised of the same material. The package can be assembled using standard automated equipment, and does not require a weight or clip to force the parts close together, which force typically reduces the solder bond line thickness. Advantageously, the thermal stresses on each side of the die are effectively balanced, allowing for a large surface area die to be packaged with conventional and less expensive materials. One type of die that benefits from the present invention can include a transient voltage suppressor, but could include other dies generating a significant amount of heat, such as those in excess of 0.200 inches square. | 05-06-2010 |
20100109148 | SEMICONDUCTOR DEVICE - When a second semiconductor chip is mounted onto a first semiconductor chip, collision of the first semiconductor chip with a lead frame is to be prevented. The lead frame has a die pad and suspending leads for supporting the die pad. A joining portion is provided over the lead frame. The first semiconductor chip is provided over the lead frame through the joining portion. The second semiconductor chip is provided over the first semiconductor chip. A resin member covers the die pad and the first and second semiconductor chips. The joining portion is positioned over each of the die pad and the suspending leads. | 05-06-2010 |
20100109149 | FLIP CHIP WITH INTERPOSER, AND METHODS OF MAKING SAME - A device is disclosed which includes a die comprising an integrated circuit and an interposer that is coupled to the die, the interposer having a smaller footprint than that of the die. A method is disclosed which includes operatively coupling an interposer to a die comprising an integrated circuit, the interposer having a smaller footprint than that of the die, and filling a space between the interposer and the die with an underfill material. | 05-06-2010 |
20100117216 | CHIP PACKAGE STRUCTURE - A chip package structure including a substrate, at least one chip, a heat dissipation device, at least one first conductive bar, a molding compound, and at least one second conductive bar is provided. The chip and the heat dissipation device are respectively disposed on a first and a second surface of the substrate. The first conductive bar has two opposite end surfaces, wherein one end surface is disposed on the first surface of the substrate, the other end surface is extended away from the substrate, and a fastening slot is disposed between the two end surfaces and passes through the other end surface. The molding compound encapsulates the substrate, the chip, part of the heat dissipation device, and the first conductive bar. The second conductive bar is disposed on one surface of the molding compound and has a protrusion portion fastened to the fastening slot of the first conductive bar. | 05-13-2010 |
20100117217 | SEMICONDUCTOR PACKAGE - Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package. | 05-13-2010 |
20100123240 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device is provided with improved reliability. A semiconductor chip is mounted over a chip mounting portion of a lead frame via solder. A metal plate is arranged over a source pad of the semiconductor chip and a lead portion of a lead frame via solder. A solder reflow process is performed thereby to bond the semiconductor chip over the chip mounting portion with a solder, and to bond the metal plate to the source pad and the lead portion with the other solders. The lead frame is formed of a copper alloy, and thus has its softening temperature higher than the temperature of the solder reflow process. The metal plate is formed of oxygen-free copper, and has its softening temperature lower than the temperature of the solder reflow process, whereby the metal plate is softened in the solder reflow process. Thereafter, a gate pad electrode of the semiconductor chip is coupled to a lead portion via the wire, a sealing resin portion is formed, and then the lead frame is cut. | 05-20-2010 |
20100127380 | LEADFRAME FREE LEADLESS ARRAY SEMICONDUCTOR PACKAGES - Leadframe-free semiconductor packages and methods for making and using the same are described. The semiconductor packages contain an interconnect structure comprising an array of land pads. The interconnect structure is formed from and routed using a printable or wirebondable conductive material and is not formed using any etching procedure. A solderable mask covers the interconnect structure except for the land pads. A die containing an integrated circuit device is connected to the interconnect structure by either a wirebonding process or by a flipchip process. The land pad arrays can contain a solder connector, such as a solder ball or bump, that can be used to connect the semiconductor package to a printed circuit board. Other embodiments are described. | 05-27-2010 |
20100127381 | Integrated Circuit Devices Having Printed Circuit Boards Therein With Staggered Bond Fingers That Support Improved Electrical Isolation - An integrated circuit substrate includes an integrated circuit chip having a plurality of electrically conductive pads on a surface thereof and a printed circuit board mounted to the integrated circuit chip. The printed circuit board includes an alternating arrangement of first and second electrically conductive bond fingers. These first and second bond fingers are elevated at first and second different heights, respectively, relative to the plurality of electrically conductive pads. The printed circuit board also includes a first plurality of electrically insulating pedestals supporting respective ones of the first electrically conductive bond fingers at elevated heights relative to the second electrically conductive bond fingers. First and second pluralities of electrical interconnects (e.g., wires, beam leads) are also provided. The first plurality of electrical interconnects operate to electrically connect first ones of the plurality of electrically conductive pads to respective ones of the first electrically conductive bond fingers. The second plurality of electrical interconnects electrically connect second ones of the plurality of electrically conductive pads to respective ones of the second electrically conductive bond fingers. | 05-27-2010 |
20100127382 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor carrier with a top surface on which a plurality of electrodes are disposed; and a semiconductor element electrically connected through a plurality of bump electrodes to the plurality of associated electrodes. The plurality of electrodes are substantially uniformly spaced. | 05-27-2010 |
20100127383 | POWER SEMICONDUCTOR MODULE - In the power semiconductor module, a wiring metal plate electrically connects between power semiconductor elements joined to the circuit pattern, and between the power semiconductor elements and the circuit pattern. Cylindrical main terminals are joined, substantially perpendicularly, to the wiring metal plate and the circuit pattern, respectively. A cylindrical control terminal is joined, substantially perpendicularly, to one of the power semiconductor elements. | 05-27-2010 |
20100127384 | Semiconductor device and connection checking method for semiconductor device - Provided is a semiconductor device in which a connection between connection terminals and land of the semiconductor device can be checked with the semiconductor device kept in a sound condition, the connection not being allowed to be checked with a semiconductor chip. The semiconductor device of the present invention includes: a package substrate; a semiconductor chip mounted on the package substrate; a first land formed in a first principal surface of the package substrate; a second land formed in a second principal surface of the package substrate; first connection terminals connected to the second land and having the connection thereto not allowed to be checked with the semiconductor chip; a connection interconnection for connecting the first land and the second land; a second connection terminal formed in the second principal surface of the package substrate; and a branch interconnection for connecting the connection interconnection and the second connection terminal. | 05-27-2010 |
20100133680 | Wafer level package and method of manufacturing the same and method of reusing chip - The present invention relates to a wafer level package and a method of manufacturing the same and a method of reusing a chip and provides a wafer level package including a chip; a removable resin layer formed to surround side surfaces and a lower surface of the chip; a molding material formed on the lower surface of the removable resin layer; a dielectric layer formed over the removable resin layer including the chip and having via holes to expose portions of the chip; redistribution lines formed on the dielectric layer including insides of the via holes to be connected to the chip; and a solder resist layer formed on the dielectric layer to expose portions of the redistribution lines. Also, the present invention provides a method of manufacturing a wafer level package and a method of reusing a chip. | 06-03-2010 |
20100140783 | Semiconductor Device and Method of Forming Bond Wires and Stud Bumps in Recessed Region of Peripheral Area Around the Device for Electrical Interconnection to Other Devices - A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A recessed region with angled or vertical sidewall is formed in the peripheral area. A conductive layer is formed in the recessed region. A first stud bump is formed over a contact pad of the semiconductor die. A second stud bump is formed over the first conductive layer within the recessed region. A bond wire is formed between the first and second stud bumps. A third stud bump is formed over the bond wire and first stud bump. A dicing channel partially formed through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the bond wire and stud bumps. | 06-10-2010 |
20100140784 | ACCESSING OR INTERCONNECTING INTEGRATED CIRCUITS - Multiple integrated circuits (ICs) die, from different wafers, can be picked-and-placed, front-side planarized using a vacuum applied to a planarizing disk, and attached to each other or a substrate. The streets between the IC die can be filled, and certain techniques or fixtures allow application of monolithic semiconductor wafer processing for interconnecting different die. High density I/O connections between different IC die can be obtained using structures and techniques for aligning vias to I/O structures, and programmably routing IC I/O lines to appropriate vias. Existing IC die can be retrofitted for such interconnection to other IC die, such as by using similar techniques or tools. | 06-10-2010 |
20100148352 | GRID ARRAY PACKAGES AND ASSEMBLIES INCLUDING THE SAME - A semiconductor device assembly includes a substrate and a semiconductor die adjacent to a first surface of the substrate. The substrate also includes a second surface opposite from the first surface, an opening extending from the first surface and the second surface, contact pads on the second surface, and substrate pads on the second surface, adjacent to the opening. Bond pads of the semiconductor die are aligned with the opening through the substrate. Intermediate conductive elements, such as bond wires, extend from bond pads of the semiconductor die, through the opening, to substrate pads on the opposite, second surface of the substrate. An encapsulant, which fills the opening and covers the intermediate conductive elements, protrudes beyond a plane in which the second surface of the substrate is located. Discrete conductive elements, such as solder balls, may protrude from the contact pads of the substrate to connect the semiconductor device assembly to another component, such as a printed circuit board or another packaged semiconductor device. | 06-17-2010 |
20100155928 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE SAME - A semiconductor package includes: a wiring board; and a semiconductor device which is formed on the wiring board; wherein the semiconductor device includes: a semiconductor chip; and a penetration electrode, one end of which is fixed on one plane of the semiconductor chip, and the other end of which penetrates the semiconductor chip and is fixed on the other plane of the semiconductor chip, the penetration electrode penetrating the semiconductor chip in such a manner that the penetration electrode is not contacted to a wall plane of the semiconductor chip by a space portion formed in the semiconductor chip; and the wiring board and the semiconductor device are electrically connected via the penetration electrode. | 06-24-2010 |
20100155929 | Chip-Stacked Package Structure - A chip stacked package structure and applications are provided, wherein the chip stacked package structure comprises a substrate, a first chip, a patterned circuit layer and a second chip. The substrate has a first surface and an opposite second surface. The first chip with a first active area and an opposite first rear surface is electrically connected to first surface of substrate by a flip chip bonding process. The patterned circuit layer set on the dielectric layer is electrically connected to the substrate via a bonding wire. The second chip set on the patterned circuit layer has a second active area and a plurality of second pads formed on the second active area, wherein the second bonding pad is electrically connected to the patterned circuit layer. | 06-24-2010 |
20100155930 | STACKABLE SEMICONDUCTOR DEVICE ASSEMBLIES - A semiconductor device assembly includes a substrate and a semiconductor die adjacent to a first surface of the substrate. The substrate also includes a second surface opposite from the first surface, an opening extending from the first surface and the second surface, contact pads on the first surface, and substrate pads on the second surface, adjacent to the opening. Bond pads of the semiconductor die are aligned with the opening through the substrate. Intermediate conductive elements, such as bond wires, extend from bond pads of the semiconductor die, through the opening, to substrate pads on the opposite, second surface of the substrate. An encapsulant, which fills the opening and covers the intermediate conductive elements, protrudes beyond a plane in which the second surface of the substrate is located. Another electronic device, such as another semiconductor device package, may communicate electrically with the die of the semiconductor device assembly through the contact pads on the first surface of the substrate. In some embodiments, the other electronic device may be stacked with the semiconductor device assembly. | 06-24-2010 |
20100164089 | Non-Conductive Planarization of Substrate Surface for Mold Cap - Consistent with an example embodiment, there is a method for fabricating a semiconductor package having a substrate. The method comprises defining an encapsulation boundary on a surface of the substrate; the encapsulation boundary is divided into a molding region and a non-molding region. Over the substrate, a plurality of conductive traces is provided. Each conductive trace has an inner connection located in the molding region and an outer connection located in the non-molding region. A plurality of non-conducting dummy traces across the encapsulation boundary is provided. The plurality of non-conductive dummy traces are interposed among the conductive traces and are spaced apart at an interval less than a predetermined minimum air-vein forming distance (Dmln). A solder mask over the substrate covers the conductive traces and the non-conductive dummy traces. The molding region of the substrate is encapsulated with a molding compound. | 07-01-2010 |
20100164090 | SEMICONDUCTOR PACKAGE APPARATUS AND MANUFACTURING METHOD THEREOF - A semiconductor package apparatus includes a first semiconductor chip bonded onto a substrate of which metal wire turning upward; and a second semiconductor chip conductively bonded onto the first semiconductor chip in a vertical direction such that a metal wire of the second semiconductor chip and the metal wire of the first semiconductor chip have facing points. The semiconductor package apparatus includes a third semiconductor chip conductively bonded onto the first semiconductor chip in the vertical direction to be disposed horizontally with the second semiconductor chip such that a metal wire of the third semiconductor chip and the metal wire of the first semiconductor chip have facing points. | 07-01-2010 |
20100164091 | SYSTEM-IN-PACKAGE PACKAGING FOR MINIMIZING BOND WIRE CONTAMINATION AND YIELD LOSS - A system-in-package (SiP) package is provided. In one embodiment, the SiP package comprises a substrate having a first surface and a second surface opposite the first surface, the substrate having a set of bond wire studs on bond pads formed on the second surface thereof; a first semiconductor chip having a first surface and a second surface opposite the first surface, wherein the first surface of the first semiconductor chip is mounted to the second surface of the substrate by means of solder bumps; an underfill material disposed between the first semiconductor chip and the substrate, encapsulating the solder bumps; a second semiconductor chip having a first surface and a second surface opposite the first surface, wherein the first surface of the second semiconductor chip is mounted to the second surface of the first semiconductor chip; and a set of bond wires electrically coupled from the second semiconductor chip to the set of bond wire studs on the substrate. | 07-01-2010 |
20100176503 | SEMICONDUCTOR PACKAGE SYSTEM WITH THERMAL DIE BONDING - A semiconductor package system includes providing a substrate having a plurality of thermal vias extending through the substrate. A solder mask is positioned over the plurality of thermal vias. A plurality of thermally conductive bumps is formed on at least some of the plurality of thermal vias using the solder mask. An integrated circuit die is attached to the plurality of thermally conductive bumps. An encapsulant encapsulates the integrated circuit die. | 07-15-2010 |
20100176504 | SEMICONDUCTOR DEVICE - A semiconductor device including: a semiconductor member having thereon a plurality of interconnect pads: and a mounting member having a plurality of electrode terminals electrically and mechanically connected to the respective interconnect pads for mounting the semiconductor chip on the mounting member, the electrode terminals forming a plurality of I/O cells each having part of the electrode terminals, the part of electrode terminals including signal terminals, the I/O cells forming a first group of the I/O cells and a second group of I/O cells disposed on an inner position of the mounting member with respect to the first group. The higher integration of the semiconductor device having the higher performances can be realized because the interconnect lines can be drawn to the outer periphery of the chip from the interconnect pads corresponding to each of the I/O cells when the chip is miniaturized or the number of the ball electrodes is increased. | 07-15-2010 |
20100176505 | POWER SEMICONDUCTOR MODULE AND FABRICATION METHOD THEREOF - An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress can escape. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board serving as a current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and cracks of the cover plate. | 07-15-2010 |
20100187676 | CUBE SEMICONDUCTOR PACKAGE COMPOSED OF A PLURALITY OF STACKED TOGETHER AND INTERCONNECTED SEMICONDUCTOR CHIP MODULES - A cube semiconductor package includes one or more stacked together and interconnected semiconductor chip modules. The cube semiconductor package includes a semiconductor chip module and connection members. The semiconductor chip module includes a semiconductor chip which has a first and second surface, side surfaces, bonding pads, through-electrodes and redistribution lines. The second surface faces away from the first surface. The side surfaces connect to the first and second surfaces. The bonding pads are placed on the first surface. The through-electrodes pass through the first and second surfaces. The redistribution lines are placed at least on one of the first and second surfaces and are electrically connected to the through-electrodes and the bonding pads, and have ends flush with the side surfaces. The connection members are placed on the side surfaces and electrically connected with the ends of the redistribution lines. | 07-29-2010 |
20100187677 | WAFER LEVEL PACKAGE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a wafer level package can include: forming an indentation, by etching one side of a semiconductor chip, on one side of which a chip pad is formed; forming a rewiring pattern, which is electrically connected with the chip pad and which includes a post pad having a corrugated shape in correspondence with the indentation, by selectively adding a conductive material on one side of the semiconductor chip; forming a sacrificial layer on one side of the semiconductor chip such that a window is formed in the sacrificial layer that completely or partially uncovers the post pad; forming a conductive post on the post pad, by filling the window with a conductive material; and removing the sacrificial layer. This method can be used to produce a wafer level package having a post structure that provides greater strength against lateral shear stresses. | 07-29-2010 |
20100187678 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided. | 07-29-2010 |
20100187679 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. | 07-29-2010 |
20100193934 | SEMICONDUCTOR DEVICE, A METHOD OF MANUFACTURING THE SAME AND AN ELECTRONIC DEVICE - A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member. | 08-05-2010 |
20100200981 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - In a method of manufacturing a semiconductor package, a chip is disposed on a carrier. An inert gas is run around one end of a line portion of a copper bonding wire while the end is being formed into a spherical portion. The spherical portion is bonded to a pad of the chip. The chip and the copper bonding wire are sealed and the carrier is covered by a molding compound. | 08-12-2010 |
20100200982 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a resin sealed semiconductor device including: a semiconductor element; a plurality of micro-balls including an internal terminal surface and an external connection electrode in two sides of the micro-balls; metal wires for electrically connecting the semiconductor element and an internal terminal surface; and a sealing body for sealing the semiconductor element, a part of each the plurality of the terminals, and metal wires with a sealing resin, in which a back surface of the semiconductor element is exposed from the sealing body, and a part of each the plurality of micro-balls are exposed as the external connection electrodes from a bottom surface of the sealing body in a projection manner. | 08-12-2010 |
20100207265 | Method of stiffening coreless package substrate - Embodiments of the present invention relate to a method of stiffening a semiconductor coreless package substrate to improve rigidity and resistance against warpage. An embodiment of the method comprises disposing a sacrificial mask on a plurality of contact pads on a second level interconnect (package-to-board interconnect) side of a coreless package substrate, forming a molded stiffener around the sacrificial mask without increasing the effective thickness of the substrate, and removing the sacrificial mask to form a plurality of cavities in the molded stiffener corresponding to the contact pads. Embodiments also include plating the surface of the contact pads and the sidewalls of the cavities in the molded cavities with an electrically conductive material. | 08-19-2010 |
20100207266 | CHIP PACKAGE STRUCTURE - A chip package structure including a substrate, a plurality of electrodes, a chip, and a plurality of bumps is provided. Each of the electrodes has a bottom portion and an annular element, wherein the bottom portion is disposed on the substrate, the annular element is disposed on the bottom portion, and the bottom portion and the annular element define a containing recess. The chip is disposed above the substrate and has an active surface facing the substrate and a plurality of pads disposed on the active surface. The bumps are respectively disposed on the pads and respectively inserted into the containing recesses. The melting point of the electrodes is higher than that of the bumps. A chip package method is also provided. | 08-19-2010 |
20100207267 | Integrated Circuit Package - Two integrated circuits having circuitry on one of their major surfaces are ground on their opposite major surfaces to reduce their thickness. The ground integrated circuits are then adhered together to form a composite body and placed in a chamber formed within a substrate such as a printed circuit board. Electrical connections are formed between contacts of the integrated circuits and contacts of the substrate. Components may be mounted on the outer surfaces of the substrate. | 08-19-2010 |
20100207268 | SEMICONDUCTOR PACKAGING SUBSTRATE IMPROVING CAPABILITY OF ELECTROSTATIC DISSIPATION - A semiconductor packaging substrate with improved capability of electrostatic dissipation comprises a dielectric layer, a plurality of leads, a plurality of first electrostatic guiding traces, a plurality of second electrostatic guiding traces and a solder mask. The first electrostatic guiding traces and the second electrostatic guiding traces are formed in pairs in a plurality of electrostatic dissipation regions on the dielectric layer, where each pair of the first and second electrostatic guiding traces are disposed in equal line spacing and are electrically isolated from each other. The solder mask partially covers the leads but exposes the first electrostatic guiding traces and the second electrostatic guiding traces. The first electrostatic guiding traces are connected to some of the leads to enhance protection against electrostatic discharge. | 08-19-2010 |
20100224982 | LEAD AND LEAD FRAME FOR POWER PACKAGE - A power device includes a semiconductor chip provided over a substrate, and a patterned lead. The patterned lead includes a raised portion located between a main portion and an end portion. At least part of the raised portion is positioned over the semiconductor chip at a larger height than both the main portion and the end portion. A bonding pad may also be included. The end portion may include a raised portion, bonded portion, and connecting portion. At least part of the bonded portion is bonded to the bonding pad and at least part of the raised portion is positioned over the bonding pad at a larger height than the bonded portion and connecting portion. The end portion may also include a plurality of similarly raised portions. | 09-09-2010 |
20100224983 | SEMICONDUCTOR PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor package structure includes the following steps. Firstly, a carrier having an adhesion tape is provided. Next, a plurality of chips are disposed on the adhesion tape. Then, a molding compound is dispensed on the adhesion tape, so that the molding compound covers the chips. Afterwards, a heat spreader is disposed on a plurality of chips. Then, the molding compound is solidified as an encapsulant to fix the heat spreader on the chips. After that, the carrier and the adhesion tape are removed to expose the active surfaces of the chips. Then, a redistribution layer is formed adjacent to the active surfaces of the chips. Next, a plurality of solder balls are disposed on the redistribution layer. Lastly, a plurality of packages are formed by cutting the redistribution layer, the encapsulant and the heat spreader according to the positions of the chip. | 09-09-2010 |
20100224984 | SEMICONDUCTOR DEVICE AND STACKED SEMICONDUCTOR DEVICE IN WHICH CIRCUIT BOARD AND SEMICONDUCTOR CHIP ARE CONNECTED BY LEADS - A semiconductor device according to one embodiment has a wiring circuit board, a semiconductor chip, a die attach material and bumps. The semiconductor chip is mounted on the wiring circuit board. The die attach material is provided between the wiring circuit board and the semiconductor chip. A wiring layer is provided on one surface of the wiring circuit board. Leads are extended from the wiring layer and connected to the semiconductor chip. The bumps are provided at outer positions relative to the region where the semiconductor chip of the wiring circuit board is mounted. The wiring layer in the wiring circuit board is formed on the surface opposite from the surface on which the semiconductor chip is mounted. | 09-09-2010 |
20100224985 | Chip-Scale Packaging with Protective Heat Spreader - A semiconductor package can include a semiconductor die having an integrated circuit, a first die surface, and an opposite second die surface. A packaging can be attached to the die and have a holder surface opposite the first die surface. A heat spreader can be configured to cover the second die surface and the packaging surface and can be attached thereto by a layer of adhesive positioned between the heat spreader and the semiconductor die. A semiconductor package array can include an array of semiconductor dies and a heat spreader configured to cover each semiconductor die. A conductive lead can be electrically connected to the integrated circuit in a semiconductor die and can extend from the first die surface. Manufacturing a semiconductor package can include applying thermally conductive adhesive to the heat spreader and placing the heat spreader proximate the semiconductor die. | 09-09-2010 |
20100224986 | MOUNTED BODY AND METHOD FOR MANUFACTURING THE SAME - A mounted body ( | 09-09-2010 |
20100230801 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor device including an interconnect substrate having a cavity structure and a semiconductor element mounted on a bottom part of the cavity structure; and a second semiconductor device provided on and connected to the first semiconductor device via connection terminals. A sealing material is provided between the first semiconductor device and the second semiconductor device. A sloped portion is formed, at a corner portion at which the bottom part and a side wall of the cavity structure in the first semiconductor device meets, to be sloped toward a center part of the cavity structure and have a tapered shape which becomes continuously wider in the direction from an upper part to a lower part. | 09-16-2010 |
20100237489 | Structure and Method for Sealing Cavity of Micro-Electro-Mechanical Device - A cavity package ( | 09-23-2010 |
20100237490 | PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A package structure and a manufacturing method thereof are provided. The package structure includes a packaging substrate, a chip, an interposer substrate, a wire and an adhesive layer. The packaging substrate has an upper packaging surface. The chip is disposed on the upper packaging surface. The wire connects the packaging substrate and the interposer substrate. The adhesive layer is disposed between the packaging substrate and the interposer substrate, and covers the entire chip and part of the upper packaging surface. The adhesive layer includes a first adhesive part and a second adhesive part. The first adhesive part adheres the interposer substrate and the chip. The second adhesive part surrounds the first adhesive part, adheres the interposer substrate and the packaging substrate, and supports a periphery of the interposer substrate. | 09-23-2010 |
20100237491 | Semiconductor package with reduced internal stress - A semiconductor package may include a semiconductor chip having a plurality of chip pads arranged apart from each other on a substrate body and an insulation layer having chip pad-exposing portions for exposing chip pads. The insulation layer may be separated by underlying layer-exposing portions between the chip pads, and the semiconductor package may further include a connector in the chip pad-exposing portions and connected to corresponding chip pads. | 09-23-2010 |
20100237492 | SEMICONDUCTOR DEVICE AND METHOD FOR DESIGNING THE SAME - The semiconductor device comprises a semiconductor chip and a printed wiring board having a recess in which the semiconductor chip is housed face-down, wherein the printed wiring board comprises multiple wiring layers below a circuit surface of the semiconductor chip on which connection terminals are formed, and the multiple wiring layers include a first wiring layer for forming signal wires, a second wiring layer for forming a ground plane, and a third wiring layer for forming power wires and power BGA and ground BGA pads in sequence from the circuit surface. | 09-23-2010 |
20100237493 | PRINTED CIRCUIT BOARD AND ELECTRONIC APPARATUS HAVING A PRINTED CIRCUIT BOARD - A printed circuit board including: a semiconductor package including a main body including a substantially rectangular parallelepiped shape, and a plurality of solder balls on one face of the main body; a board including a first face, a second face, and a hole portion, the first face including a mounting area where the plurality of solder balls are configured to be attached, the second face being opposite to the first face, the hole portion being formed around the mounting area and connected to a conductive pattern, the conductive pattern being configured to be connectable to an electronic component mounted on the board; and a bonding portion configured to bond the semiconductor package to the board, the bonding portion including a portion disposed in the hole portion. | 09-23-2010 |
20100237494 | PACKAGED MICROELECTRONIC DEVICES AND METHODS FOR MANUFACTURING PACKAGED MICROELECTRONIC DEVICES - Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed. | 09-23-2010 |
20100244225 | STACKABLE ELECTRONIC PAGKAGE AND METHOD OF FABRICATING SAME - An electronic package includes a first layer having a first surface, the first layer includes a first device having a first electrical node, and a first contact pad in electrical communication with the first electrical node and positioned within the first surface. The package includes a second layer having a second surface and a third surface, the second layer includes a first conductor positioned within the second surface and a second contact pad positioned within the third surface and in electrical communication with the first conductor. A first anisotropic conducting paste (ACP) is positioned between the first contact pad and the first conductor to electrically connect the first contact pad to the first conductor such that an electrical signal may pass therebetween. | 09-30-2010 |
20100244226 | STACKABLE ELECTRONIC PACKAGE AND METHOD OF FABRICATING SAME - An electronic package includes a first layer having a first surface, the first layer includes a first device having a first electrical node, and a first contact pad in electrical communication with the first electrical node and positioned within the first surface. The package includes a second layer having a second surface and a third surface, the second layer includes a first conductor positioned within the second surface and a second contact pad positioned within the third surface and in electrical communication with the first conductor. A first anisotropic conducting paste (ACP) is positioned between the first contact pad and the first conductor to electrically connect the first contact pad to the first conductor such that an electrical signal may pass therebetween. | 09-30-2010 |
20100244227 | Semiconductor packages and electronic systems including the same - Provided are semiconductor packages and electronic systems including the same. A first memory chip may be stacked on a first portion of a substrate. A controller chip may be stacked on a second portion of the substrate, which is different from the first portion. At least one first bonding wire may directly connect the first memory chip with the controller chip. At least one second bonding wire may directly connect the first memory chip with the substrate, and may be electrically connected with the at least one first bonding wire. | 09-30-2010 |
20100244228 | Semiconductor device and method of manufacturing the same - The extent of a bow of a semiconductor device is suppressed in a case where the fillet width of an underfill resin is asymmetrical. The center position | 09-30-2010 |
20100244229 | SEMICONDUCTOR PACKAGE FABRICATION PROCESS AND SEMICONDUCTOR PACKAGE - A substrate is provided with electrical connection pads on a front face and on a rear face, the front pads and rear pads being selectively connected via a network passing through the substrate. A peripheral edge of the substrate is mounted on a rigid annular frame and the rearm face secured to a suction table. A layer of a dielectric sealant containing electrically conductive particles is deposited on the front face and front pads of the substrate. Integrated-circuit chips are positioned on the front face to flatten the layer of dielectric sealant, the included electrically conductive particles making electrical connection between pads of the integrated-circuit and the front pads of the substrate. The resulting assembly in then encapsulated in a block of encapsulating material positioned on top of the front face of the substrate. The block is then diced in order to obtain a plurality of semiconductor packages. | 09-30-2010 |
20100244230 | SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes: a wiring board which includes a first face and a second face and in which a conductor pattern and a through part are provided; an electronic component which includes an electrode pad forming face where an electrode pad is formed and which is housed in the through part so that the electrode pad forming face is provided on the first face side; a seal resin which is provided in the through part and the electrode pad forming face, seals the electronic component and includes a first plane exposing a connection face of the electrode pad; and a wiring pattern which is provided in the first face of the wiring board and the first plane of the seal resin and electrically connects the connection face of the electrode pad with a first connected face of the conductor pattern, and which includes a pad part. | 09-30-2010 |
20100244231 | SEMICONDUCTOR DEVICE - A semiconductor device comprises: a semiconductor element; a support substrate arranged on a surface of the semiconductor element opposite to a surface thereof provided with a pad, the support substrate being wider in area than the semiconductor element; a burying insulating layer on the support substrate for burying the semiconductor element therein; a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area on top of outer periphery of the semiconductor element for augmenting the mechanical strength of the burying insulating layer and the fan-out interconnection. | 09-30-2010 |
20100252921 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes: a semiconductor element that has a first surface on which an electrode terminal is formed and a second surface opposite to the first surface; a resin mold portion in which the semiconductor element is embedded and that has a third surface exposing the first surface and a fourth surface opposite to the third surface; and a wiring layer formed on the third surface and the first surface, wherein a plurality of conducting portions are provided in the resin mold portion, which penetrate the resin mold portion along a thickness direction thereof to be electrically connected to the wiring layer. | 10-07-2010 |
20100252922 | Power Semiconductor Module, Power Semiconductor Module Assembly and Method for Fabricating a Power Semiconductor Module Assembly - The invention relates to a power semiconductor module including a power semiconductor chip arranged on a substrate and comprising a bottom side facing the substrate, a top side facing away from the substrate, and an electrical contact face arranged on the top side. A bond wire is bonded to the contact face. At least when the power semiconductor module is fastened to a heatsink, a contact pressure element creates a contact pressure force (F) acting on a sub-portion | 10-07-2010 |
20100258936 | STACKED SEMICONDUCTOR PACKAGE - A stacked semiconductor package is presented which includes multiple semiconductor chips and through-electrodes. Each semiconductor chip has bonding pads formed on a first surface of the semiconductor chip and has a projection which projects from a portion of a second surface of the semiconductor chip. The first and second surfaces of the semiconductor chip face away from each other the first surface. The through-electrodes pass through the first surface and through the projection on the second surface. | 10-14-2010 |
20100258937 | Semiconductor Device and Method of Forming Interconnect Structure for Encapsulated Die Having Pre-Applied Protective Layer - A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer. | 10-14-2010 |
20100264534 | CHIP PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A chip package structure includes a circuit substrate, a chip, at least one bonding wire, and an adhesive layer. The circuit substrate has a bonding surface and at least one pad disposed on the bonding surface. The chip is disposed on the bonding surface of the circuit substrate and has an active surface away from the circuit substrate and at least one contact pad disposed on the active surface. The bonding wire is connected between the contact pad and the pad, such that the chip is electrically connected to the circuit substrate through the bonding wire. The bonding wire includes a copper layer, a nickel layer covering the copper layer, and a gold layer covering the nickel layer. The adhesive layer is disposed between the pad and the bonding wire and between the contact pad and the bonding wire and respectively covers two terminals of the bonding wire. | 10-21-2010 |
20100270669 | Surface mount package with ceramic sidewalls - A package for use in encapsulating an electronic device is disclosed. The package includes a dielectric frame having first and second sides with a pair of apertures extending through the dielectric frame. These apertures are separated by a raised shelf span extending inwardly from an internal perimeter of the dielectric frame. The raised shelf span defines a first thickness of the dielectric frame and a raised sidewall extending outwardly from the second side along an external perimeter of said dielectric frame defines a second thickness of said frame, with the second thickness being greater than the first thickness. Also provided is a metallic component having a flange and a pedestal that extends perpendicularly from the flange. The flange is bonded to the first side of the dielectric frame and extends across one of the pair of apertures with the pedestal extending into that aperture. A gap between the pedestal and the dielectric frame having a width of at least 0.015 inch. This prevents debris from being trapped in the gap and minimizes a risk of particle impact noise detection (PIND) failure. | 10-28-2010 |
20100276796 | REWORKABLE ELECTRONIC DEVICE ASSEMBLY AND METHOD - An electronic device assembly is provided which includes a substrate, an interposer and an integrated circuit chip. The substrate is fabricated of a first material having a first thermal expansivity, and the interposer and integrated circuit chip are fabricated of a second material having a second thermal expansivity. The second thermal expansivity is different from the first thermal expansivity so that there is a coefficient of thermal expansion mismatch between the substrate and the interposer or chip. The interposer is coupled to the substrate via a first plurality of electrical contacts and an underfill adhesive at least partially surrounding the electrical contacts to bond the interposer to the substrate and thereby reduce strain on the first plurality of electrical contacts. The integrated circuit chip is coupled to the interposer via a second plurality of electrical contacts only, without use of an adhesive surrounding the second plurality of electrical contacts. | 11-04-2010 |
20100276797 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate having a chip island, a chip attached to the chip island, and encapsulation material deposited on the chip and part of the chip island. The chip island includes a first main face to which the chip is attached opposite a second main face, with the second main face of the chip island defining at least one cavity. | 11-04-2010 |
20100276798 | Semiconductor device - A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad. | 11-04-2010 |
20100289133 | Stackable Package Having Embedded Interposer and Method for Making the Same - The present invention relates to a stackable package having an embedded interposer and a method for making the same. The package includes a substrate, a chip, a first embedded interposer, a circuit layer and a solder mask. The substrate has an upper surface, a bottom surface and at least one connecting pad. The connecting pad is disposed adjacent to the upper surface. The chip is disposed adjacent to the upper surface of the substrate, and is electrically connected to the substrate. The first embedded interposer encapsulates the upper surface of the substrate and the chip. The to first embedded interposer includes at least one plating through hole. The plating through hole penetrates through the first embedded interposer, and is connected to the connecting pad of the substrate. The circuit layer is disposed adjacent to the first embedded interposer, and the plating through hole is connected to the circuit layer. The circuit layer includes at least one pad. The solder mask is disposed adjacent to the circuit layer, and exposes the pad. Therefore, the package has more pads for inputting/outputting, more flexibility for stacking a top package, and a reduced total thickness. | 11-18-2010 |
20100289134 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH REINFORCED ENCAPSULANT HAVING EMBEDDED INTERCONNECT AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: fabricating a base package substrate having a component side and a system side; coupling stacking interconnects on the component side; and forming an integrated circuit receptacle, for receiving an integrated circuit device, by molding a reinforced encapsulant on the component side and exposing a portion of the stacking interconnects. | 11-18-2010 |
20100295164 | AIRGAP MICRO-SPRING INTERCONNECT WITH BONDED UNDERFILL SEAL - A package includes a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, the area in which the micro-springs contact the contact pads forming an interconnect area, an assembly material between the pad chip and the spring chip arranged to form a gap between the pad chip and the spring chip, and an underfill material in a portion of the gap to form a mold from the pad chip and the spring chip. A package includes a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, the area in which the micro-springs contact the contact pads forming an interconnect area, an assembly material between the pad chip and the spring chip arranged to form a gap between the pad chip and the spring chip, an underfill material in the gap to form a mold from the pad chip and the spring chip, and at least one wall between the underfill material and the interconnect area. A method of assembling a package includes aligning a pad chip with a spring chip to form at least one interconnect in an interconnect area, adhering the pad chip to the spring chip so that there is a gap between the pad chip and the spring chip, dispensing underfill material into the gap to seal the interconnect area from an environment external to the package, and curing the underfill material to form a solid mold. | 11-25-2010 |
20100295165 | STRESS-ENGINEERED INTERCONNECT PACKAGES WITH ACTIVATOR-ASSISTED MOLDS - A package has a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, the area in which the micro-springs contact the contact pads forming an interconnect area, a chemical activator in the interconnect area, and an adhesive responsive to the chemical activator in the interconnect area. A package has a pad chip having contact pads, a spring chip having micro-springs in contact with the contact pads to form interconnects, a chemical activator on one of either the pad chip or the spring chip, and an adhesive responsive to the chemical activator on the other of either the pad chip or the spring chip. A method includes providing a pad chip having contact pads, providing a spring chip having micro-springs, applying a chemical activator to one of either the pad chip or the spring chip, applying an adhesive responsive to the chemical activator on the other of the pad chip or the spring chip, aligning the pad chip to the spring chip such that the micro-springs will contact the contact pads, and pressing the pad chip and the spring chip together such that the chemical activator at least partially cures the adhesive. | 11-25-2010 |
20100295166 | Semiconductor package - The semiconductor package includes a printed circuit board, a first semiconductor chip, and a second semiconductor chip. The printed circuit board includes a slot. The first semiconductor chip is mounted on the printed circuit board to cover a first part of the slot. The second semiconductor chip is mounted on the printed circuit board to cover a second part of the slot separate from the first part. The first semiconductor chip is substantially coplanar with the second semiconductor chip. | 11-25-2010 |
20100301467 | WIREBOND STRUCTURES - Embodiments of the present disclosure provide an apparatus comprising a semiconductor die, a bond pad formed on the semiconductor die, the bond pad comprising aluminum (Al), a bonding material comprising gold (Au) coupled to the bond pad, the bonding material covering at least a portion of the bond pad, and a wire coupled to the bonding material, the wire comprising copper (Cu). Other embodiments may be described and/or claimed. | 12-02-2010 |
20100301468 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device may include, but is not limited to a wiring board, a first insulator, a semiconductor chip, and a second insulator. The first insulator penetrates the wiring board. A top end of the first insulator is higher in level than an upper surface of the wiring board. The semiconductor chip is disposed on the top end of the first insulator. The semiconductor chip is separated from the upper surface of the wiring board. The second insulator covers the semiconductor chip and the upper surface of the wiring board. | 12-02-2010 |
20100308452 | ELECTRONIC MODULE WITH FEED THROUGH CONDUCTOR BETWEEN WIRING PATTERNS - The electronic module comprises a dielectric | 12-09-2010 |
20100314745 | COPPER PILLAR BONDING FOR FINE PITCH FLIP CHIP DEVICES - A semiconductor device assembly can include a semiconductor chip, a receiving substrate, and a spacer structure interposed between the semiconductor chip and the receiving substrate. The spacer provides an unoccupied space between a pillar and a bond finger for excess conductive material, which can otherwise flow from between the pillar and bond finger and result in a conductive short. The spacer can also provide an offset between the pillar and bond finger. | 12-16-2010 |
20100314746 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package and a manufacturing method thereof are provided. A carrier having an adhesion layer is provided. A plurality of chips are disposed on the adhesion layer, wherein an active surface of each chip faces the adhesion layer. A molding compound is formed for encapsulating the chips to form a chip-redistribution encapsulant having a first surface and a second surface, wherein the first surface has a chip area and a peripheral area. The carrier and the adhesion layer are removed, so that the chip-redistribution encapsulant exposes the active surface of each chip. A plurality of solder balls are uniformly formed in the chip area and the peripheral area. The second surface of the chip-redistribution encapsulant is grinded to reduce the thickness of the chip-redistribution encapsulant, wherein the solder balls provide the chip-redistribution encapsulant with a uniform support. The chip-redistribution encapsulant is sawn to form a plurality of packages. | 12-16-2010 |
20100320589 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH BUMPS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a base strip having a base top side; forming a terminal body with a substantially spherical shape partially in the base strip; attaching a device adjacent the terminal body and over the base top side, a device mount side of the device below a top portion of the terminal body; attaching a device connector to the device and the top portion of the terminal body; applying an encapsulant over the device connector, the device, and the top portion of the terminal body; and removing the base strip providing the terminal body partially exposed from the encapsulant. | 12-23-2010 |
20100320590 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH A LEADFRAME HAVING RADIAL-SEGMENTS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing inwardly converging leadfingers having continuously decreasing widths along lengths thereof to inward ends thereof; electrically connecting an integrated circuit device on the leadfingers only on portions of the continuously decreasing widths; and encapsulating the integrated circuit device and the leadfingers with an encapsulation. | 12-23-2010 |
20100320591 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH CONTACT PADS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: attaching contact pads to a base structure; connecting a base die to the base structure; connecting a supporting die over the base die by conductive balls to the contact pads on two sides of the base die; encapsulating the contact pads, the base die, the supporting die, and the conductive balls; and removing the base structure. | 12-23-2010 |
20100320592 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which overall thickness is reduced by suppressing the rising of a metal thin line and connection reliability is enhanced at the joint of metal thin line and other member during resin sealing. A method for manufacturing such semiconductor device is also provided. The semiconductor device ( | 12-23-2010 |
20100327424 | Multi-chip package and method of providing die-to-die interconnects in same - A multi-chip package includes a substrate ( | 12-30-2010 |
20100327425 | FLAT CHIP PACKAGE AND FABRICATION METHOD THEREOF - A flat chip package comprises an encapsulation body, a plurality of connecting fingers, a plurality of conductive lines, a chip, a plurality of bond wires and an insulation layer. The conductive lines, the chip, and the bond wires are encapsulated in the encapsulation body. The connecting fingers comprise a ground finger, a power finger and at least one signal finger. One side of the connecting fingers adheres to a surface of the encapsulation body, the other side of the connecting fingers is left exposed. The conductive lines comprise a ground line connected to the ground finger, and a power line connected to the power finger. The chip comprises a ground pin, a power pin and at least one signal pin. The bond wires connect the connecting fingers, the conductive lines and the chip. The insulation layer is printed on the surface of the encapsulation body except for the connecting fingers. | 12-30-2010 |
20100327426 | Semiconductor chip package and method of manufacturing the same - Provided are a semiconductor chip package and a method of manufacturing the same. The semiconductor chip package includes a semiconductor chip including a first face having a chip pad, a second face facing the first face, and a side face connecting the first and second faces, a first lamination layer covering the second face and a portion of the side face, a second lamination layer disposed on a top surface of the first lamination layer and forming a gap having a predetermined distance from the side face, and a redistribution pattern disposed on the first face and electrically connected to the chip pad. The semiconductor package and the method of manufacturing the same achieve a high process yield and reliability. | 12-30-2010 |
20100327427 | Semiconductor device and method for manufacturing the same - A semiconductor device includes a wiring layer, a semiconductor chip which is arranged on the wiring layer with a gap there between, the semiconductor chip being electrically connected to the wiring layer through a connecting portion, a first sealing member which is filled in a space between the wiring layer and the semiconductor chip, and a second sealing member which coats the semiconductor chip. The first sealing member and the second sealing member include same organic resin, the organic resin including inorganic filler. The second sealing member has larger content of inorganic filler than the first sealing member. | 12-30-2010 |
20100327428 | PACKAGE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A method for manufacturing a package comprises a first step of forming a metal pattern including a frame and a plurality of leads extending inward from the frame, a second step of molding a resin pattern including a first resin portion which holds the plurality of leads from an inner side thereof, and second resin portions which cover bottom surfaces of peripheral portions, adjacent to portions to be removed, in the plurality of leads while exposing bottom surfaces of the portions to be removed in the plurality of leads, so as to hold the plurality of leads from a lower side thereof, and a third step of cutting the plurality of leads into a plurality of first leads and a plurality of second leads by removing the portions to be removed in the plurality of leads while the resin pattern keeps holding the peripheral portions in the plurality of leads. | 12-30-2010 |
20110001229 | PACKAGE STRUCTURE AND PACKAGE PROCESS - A package structure including a circuit substrate, at least a chip, leads and an encapsulant is provided. The circuit substrate has a first surface, a second surface opposite to the first surface, and contacts disposed on the first surface. The chip is disposed on the second surface of the circuit substrate and electrically connected to the circuit substrate. The said leads are disposed on the periphery of the second surface and surround the chip. Each lead has an inner lead portion and an outer lead portion and is electrically connected to the circuit substrate via the inner lead portion. The encapsulant encapsulates the circuit substrate, the chip and the inner lead portion and exposes the first surface of the circuit substrate and the outer lead portion, wherein the upper surface of the encapsulant and the first surface of the circuit substrate are coplanar with each other. | 01-06-2011 |
20110018120 | HIGH-BANDWIDTH RAMP-STACK CHIP PACKAGE - A chip package is described. This chip package includes a stack of semiconductor dies or chips that are offset from each other, thereby defining a terrace with exposed pads. A high-bandwidth ramp component, which is positioned approximately parallel to the terrace, electrically couples to the exposed pads. For example, the ramp component may be electrically coupled to the semiconductor dies using: microsprings, an anisotropic film, and/or solder. Consequently, the electrical contacts may have a conductive, a capacitive or, in general, a complex impedance. Furthermore, the chips and/or the ramp component may be positioned relative to each other using a ball-and-pit alignment technique. By removing the need for costly and area-consuming through-silicon vias (TSVs) in the semiconductor dies, the chip package facilitates chips to be stacked in a manner that provides high bandwidth and low cost. | 01-27-2011 |
20110018121 | Semiconductor packages and methods of fabricating the same - A semiconductor package may include a substrate having first and second surfaces, the second surface including a recessed portion, a first semiconductor chip mounted on the first surface, a first ball land outside the recessed portion, a connection pad inside the recessed portion, a second chip in the recessed portion, the second semiconductor chip including a through via electrically connected to the connection pad, and a second ball land electrically connected to the through via. A semiconductor package may include a substrate having first and second surfaces, the second surface including a recessed portion, a first semiconductor chip mounted on the first surface, a first ball land outside the recessed portion, a connection pad inside the recessed portion, a second semiconductor chip in the recessed portion, the second chip including a through via electrically connected to the connection pad, and a second ball land electrically connected to the through via. | 01-27-2011 |
20110018122 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME AND A MOUNTING STRUCTURE OF A SEMICONDUCTOR DEVICE - A semiconductor device is disclosed which includes a tab ( | 01-27-2011 |
20110024894 | CHIP PACKAGE AND MANUFACTURING METHOD THEREOF - An embodiment provides a chip package including a substrate, a cavity extending downward from an upper surface of the substrate, a metal layer overlying the substrate and conformally covering a sidewall and a bottom portion of the cavity, a chip having an upper surface and located on the metal layer in the cavity, wherein the upper surface is not lower than an upper surface of the metal layer outside of the cavity, and the protective layer covering the chip. | 02-03-2011 |
20110031607 | CONDUCTOR PACKAGE STRUCTURE AND METHOD OF THE SAME - The present invention provides a conductor package structure comprising a conductive base. An adhesive layer is formed on the conductive base. An electronic element is formed on the adhesive layer. Conductors are forming signal connection between the surface of a filling material and the bottom of the filling material, wherein the filling material is filled in the space between the electronic element and the conductors. | 02-10-2011 |
20110031608 | POWER DEVICE PACKAGE AND METHOD OF FABRICATING THE SAME - Disclosed is a power device package, which has high heat dissipation performance and includes an anodized metal substrate including a metal plate having a cavity formed on one surface thereof and an anodized layer formed on both the surface of the metal plate and the inner wall of the cavity and a circuit layer formed on the metal plate, a power device mounted in the cavity of the metal plate so as to be connected to the circuit layer, and a resin sealing material charged in the cavity of the metal plate. A method of fabricating the power device package is also provided. | 02-10-2011 |
20110031609 | SEMICONDUCTOR PACKAGE HAVING THROUGH ELECTRODES THAT REDUCE LEAKAGE CURRENT AND METHOD FOR MANUFACTURING THE SAME - A stacked semiconductor package having through electrodes that exhibit a reduced leakage current and a method of making the same are presented. The stacked semiconductor package includes a semiconductor chip, through-holes, and a current leakage prevention layer. The semiconductor chip has opposing first and second surfaces. The through-holes pass entirely through the semiconductor chip and are exposed at the first and second surfaces. A polarized part is formed on at least one of the first and second surfaces of the semiconductor chip. The through-electrodes are disposed within the through-holes. The current leakage prevention layer covers the polarized part and exposes ends of the through-electrodes. | 02-10-2011 |
20110037161 | ELECTROSTATIC CHUCKING OF AN INSULATOR HANDLE SUBSTRATE - A back of a dielectric transparent handle substrate is coated with a blanket conductive film or a mesh of conductive wires. A semiconductor substrate is attached to the transparent handle substrate employing an adhesive layer. The semiconductor substrate is thinned in the bonded structure to form a stack of the transparent handle substrate and the semiconductor interposer. The thinned bonded structure may be loaded into a processing chamber and electrostatically chucked employing the blanket conductive film or the mesh of conductive wires. The semiconductor interposer may be bonded to a semiconductor chip or a packaging substrate employing C4 bonding or intermetallic alloy bonding. Illumination of ultraviolet radiation to the adhesive layer is enabled, for example, by removal of the blanket conductive film or through the mesh so that the transparent handle substrate may be detached. The semiconductor interposer may then be bonded to a packaging substrate or a semiconductor chip. | 02-17-2011 |
20110037162 | HERMETIC PACKAGING AND METHOD OF FORMING THE SAME - The invention relates to a hermetically sealed semiconductor module and more particularly to repacking a non-hermetically sealed semiconductor module thereby forming a hermetically sealed semiconductor module. | 02-17-2011 |
20110042798 | Semiconductor Device and Method of Stacking Die on Leadframe Electrically Connected by Conductive Pillars - A semiconductor device has a first semiconductor die mounted to a first contact pad on a leadframe or substrate with bumps. A conductive pillar is formed over a second semiconductor die. The second die is mounted over the first die by electrically connecting the conductive pillar to a second contact pad on the substrate with bumps. The second die is larger than the first die. An encapsulant is deposited over the first and second die. Alternatively, the conductive pillars are formed over the substrate around the first die. A heat sink is formed over the second die, and a thermal interface material is formed between the first and second die. An underfill material is deposited under the first semiconductor die. A shielding layer is formed between the first and second die. An interconnect structure can be formed over the second contact pad of the substrate. | 02-24-2011 |
20110042799 | DIE PACKAGE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are a die package and a method of manufacturing the die package. A solder layer is formed on a lower surface of a die. The die is self-aligned and attached to a support plate using surface tension between the solder layer and a metal layer of the support plate, thus reducing attachment lead time of the die. | 02-24-2011 |
20110049698 | SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal. | 03-03-2011 |
20110057300 | Direct contact leadless flip chip package for high current devices - Some exemplary embodiments of an advanced direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a mold compound enclosing a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold compound. A first semiconductor device is attached on top of the lead frame portions as a flip chip, while a second semiconductor device is attached to a bottom side of said paddle portion and is in electrical contact with said the first semiconductor device. The extended contact lead frame portion is in direct electrical contact with the second semiconductor device without using a bond wire. Alternative exemplary embodiments may include additional extended lead frame portions, paddle portions, and semiconductor devices in various configurations. | 03-10-2011 |
20110062576 | INTEGRATED CIRCUIT PACKAGE AND DEVICE - An integrated circuit package including: a substrate having front connection pads on a front face, an integrated circuit die linked to the front face of the substrate and having front connection pads, connection wires for connecting selected front pads of the integrated circuit die to selected front pads of the substrate, first connection balls on selected front connection pads of the integrated circuit die, and second connection balls on selected front connection pads of the substrate. An integrated circuit device including a second substrate connected to the connection balls of the integrated circuit package. | 03-17-2011 |
20110068455 | PACKAGING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - This invention relates to a packaging structure and method for manufacturing the packaging structure. The packaging structure comprises a substrate film, a plurality of chips, a compound resin layer and a support layer. The substrate film is formed with circuits having a plurality of terminals exposed from a solder mask. The chips, each of which has a plurality of pads, under bump metals (UBMs) formed on the pads, and composite bumps disposed onto the UBMs, are bonded onto the substrate film to form the first tape. The second tape comprises the support layer and the compound resin layer formed on the support layer. The first tape and the second tape are both in reel-form and are expanded towards a pair of rollers to be heated and pressurized for encapsulating the chips. | 03-24-2011 |
20110068456 | Layered chip package and method of manufacturing same - A layered chip package includes a plurality of layer portions that are stacked, each of the layer portions including a semiconductor chip. The plurality of layer portions include at least one first-type layer portion and at least one second-type layer portion. The semiconductor chip has a circuit, a plurality of electrode pads electrically connected to the circuit, and a plurality of through electrodes. In every vertically adjacent two of the layer portions, the plurality of through electrodes of the semiconductor chip of one of the two layer portions are electrically connected to the respective corresponding through electrodes of the semiconductor chip of the other of the two layer portions. The first-type layer portion includes a plurality of wires for electrically connecting the plurality of through electrodes to the respective corresponding electrode pads, whereas the second-type layer portion does not include the wires. | 03-24-2011 |
20110068457 | Semiconductor package with adhesive material pre-printed on the lead frame and chip, and its manufacturing method - This invention discloses a semiconductor package with adhesive material pre-printed on the lead frame and chip, and the manufacturing method. The adhesive material is applied onto the chip carrier and the pin of the lead frame and also on the front electrode of the semiconductor chip via pre-printing. The back of the semiconductor chip is adhered on the chip carrier, and the front electrode of the semiconductor chip and the pin are connected respectively with a metal connector. The size, shape and thickness of the adhesive material are applied according to different application requirements according to size and shapes of the contact zone of the semiconductor chip and the metal connector. Particularly, the adhesive zones are formed by pre-printing the adhesive material thus significantly enhance the quality and performance of semiconductor products, and improves the productivity. | 03-24-2011 |
20110074007 | THERMALLY ENHANCED LOW PARASITIC POWER SEMICONDUCTOR PACKAGE - A method and structure for a dual heat dissipating semiconductor device. A method includes attaching a drain region on a first side of a die, such as a power metal oxide semiconductor field effect transistor (MOSFET) to a first leadframe subassembly. A source region and a gate region on a second side of the die are attached to a second leadframe subassembly. The first leadframe subassembly is attached to a third leadframe subassembly, then the device is encapsulated or otherwise packaged. An exposed portion of the first leadframe subassembly provides an external heat sink for the drain region, and the second leadframe subassembly provides external heat sinks for the source region and the gate region, as well as output leads for the gate region. The third leadframe subassembly provides output leads for the drain region. | 03-31-2011 |
20110074008 | SEMICONDUCTOR FLIP CHIP PACKAGE - This invention provides a semiconductor flip chip package including a carrier substrate and a flip chip mounted on the carrier substrate. The flip chip comprises a first input/output (I/O) pad and a second I/O pad on an active surface of the flip chip, wherein a switching between the first I/O pad and the second I/O pad is implemented by wire bonding. | 03-31-2011 |
20110084377 | SYSTEM FOR SEPARATING A DICED SEMICONDUCTOR DIE FROM A DIE ATTACH TAPE - A system is disclosed for ejecting a semiconductor die from a tape to which the die is affixed during the wafer dicing process. In embodiments, the system includes an ejector tool including a support table, ejector pins and a pick-up arm. The support table is connected to a vacuum source for creating a negative pressure at an interface between the tape and support table. The support table further includes an aperture with one or more chamfered sidewalls. The vacuum source is connected to the aperture so that, upon placement of the tape on the support table with a die centered over the aperture, the vacuum source pulls a portion of the tape around the edges of the semiconductor die away from the die and into the space created by the chamfered edges. | 04-14-2011 |
20110084378 | SEMICONDUCTOR PACKAGE WITH INTEGRATED INTERFERENCE SHIELDING AND METHOD OF MANUFACTURE THEREOF - An integrated electromagnetic interference (EMI) shield for a semiconductor module package. The integrated EMI shield includes a plurality of wirebond springs electrically connected between a ground plane in the substrate of the package and a conductive layer printed on the top of the package mold compound. The wirebond springs have a defined shape that causes a spring effect to provide contact electrical connection between the tops of the wirebond springs and the conductive layer. The wirebond springs can be positioned anywhere in the module package, around all or some of the devices included in the package, to create a complete EMI shield around those devices. | 04-14-2011 |
20110089556 | LEADFRAME PACKAGES HAVING ENHANCED GROUND-BOND RELIABILITY - Various semiconductor package arrangements and methods that improve the reliability of wire bonding a die to ground or other outside contacts are described. In one aspect, selected ground pads on the die are wire bonded to a bonding region located on the tie bar portion of the lead frame. The tie bar is connected to an exposed die attach pad that is downset from the bonding region of the tie bar. In some embodiments, the bonding region and the leads are at substantially the same elevation above the die and die attach pad. The die, bonding wires, and at least a portion of the lead frame can be encapsulated with a plastic encapsulant material while leaving a contact surface of the die attach pad exposed to facilitate electrically coupling the die attach pad to an external device. | 04-21-2011 |
20110095414 | Semiconductor substrate, laminated chip package, semiconductor plate and method of manufacturing the same - A semiconductor substrate has a plurality of groove portions formed along scribe lines. The semiconductor substrate includes: a device region in contact with at least any one of the plurality of groove portions and having a semiconductor device formed therein; a surface insulating layer formed to cover the device region and constituting a surface layer of the semiconductor substrate; and a wiring electrode connected to the semiconductor device and formed in a protruding shape rising above a surface of the surface insulating layer. The semiconductor substrate can be manufactured by forming a plurality of groove portions along scribe lines; applying an insulating material to a surface on a side where the plurality of groove portions are formed to form a surface insulating layer; and forming a wiring electrode connected to the semiconductor device and in a protruding shape rising above a surface of the surface insulating layer, after the formation of the surface insulating layer. | 04-28-2011 |
20110095415 | ROUTING LAYER FOR MITIGATING STRESS IN A SEMICONDUCTOR DIE - A routing layer for a semiconductor die is disclosed. The routing layer includes pads for attaching solder bumps; bond-pads bonded to bump-pads of a die having an integrated circuit, and traces interconnecting bond-pads to pads. The routing layer is formed on a layer of dielectric material. The routing layer includes conductive traces at least partially surrounding some pads so as to absorb stress from solder bumps attached to the pads. Parts of the traces that surround pads protect parts of the underlying dielectric material proximate the solder bumps, from the stress. | 04-28-2011 |
20110095416 | PACKAGE FOR HIGH POWER INTEGRATED CIRCUITS AND METHOD FOR FORMING - A method for packaging an integrated circuit comprises the steps of: providing a ground plane, the ground plane having a recessed area shaped to receive an integrated circuit die, wherein the integrated circuit die having a first surface with active circuitry, a second surface, and an edge generally orthogonal to the first and second surfaces; attaching the second surface of the integrated circuit die to a bottom of the recessed area with a thermally conductive adhesive; filling a space between the edge of the integrated circuit die and a side of the recessed area with a fill material; forming an insulating layer on the ground plane and the first surface of the integrated circuit die; patterning the insulating layer to expose contacts on the first surface of the integrated circuit die; and plating electrical conductors on the insulating layer and the contacts. | 04-28-2011 |
20110121443 | SEMICONDUCTOR DEVICE - A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, and an IF VCO for converting the frequency of a signal supplied from a baseband. A plurality of ball electrodes are provided on the back surface of the package substrate. The package substrate is provided with a first common GND wire for supplying a GND potential to each of the LNAs, with a second common GND wire for supplying the GND potential to the RF VCO, and with a third common GND wire for supplying the GND potential to the IF VCO. The first, second, and third common GND wires are separated from each other. | 05-26-2011 |
20110127664 | Electronic package including high density interposer and circuitized substrate assembly utilizing same - An electronic package for interconnecting a high density pattern of conductors of an electronic device (e.g., semiconductor chip) of the package and a less dense pattern of conductors on a circuitized substrate (e.g., PCB), the package including in one embodiment but a single thin dielectric layer (e.g., Kapton) with a high density pattern of openings therein and a circuit pattern on an opposing surface which includes both a high density pattern of conductors and a less dense pattern of conductors. Conductive members are positioned in the openings to electrically interconnect conductors of the electronic device to conductors of the circuitized substrate when the package is positioned thereon. In another embodiment, the interposer includes a second dielectric layer bonded to the first, with conductive members extending through the second layer to connect to the less dense pattern of circuitized substrate conductors. Circuitized substrate assemblies using the electronic packages of the invention are also provided. | 06-02-2011 |
20110133327 | SEMICONDUCTOR PACKAGE OF METAL POST SOLDER-CHIP CONNECTION - A semiconductor package with MPS-C2 configuration is revealed, primarily comprising a substrate and a chip. A plurality of leads covered by a solder mask having a rectangular slot disposed on the top surface of the substrate to expose parts of the leads. A plurality of metal pillars are disposed on the active surface of the chip. A patterned plating layer is partially formed on the exposed portions of the leads located inside the slot to form a plurality of plating-defined fingers. Therefore, the soldering area of the solder on the leads can be constrained without exceeding the patterned plating layer to avoid issue of excessive solder ability. | 06-09-2011 |
20110140262 | MODULE PACKAGE WITH EMBEDDED SUBSTRATE AND LEADFRAME - An integrated circuit package is described that includes a substrate, a leadframe and one or more integrated circuits that are positioned between the substrate and the leadframe. Multiple electrical components may be attached to one or both sides of the substrate. The active face of the integrated circuit is electrically and physically connected to the substrate. The back side of the integrated circuit is mounted on a die attach pad of the leadframe. The leadframe includes multiple leads that are physically attached to and electrically coupled with the substrate. A molding material encapsulates portions of the substrate, the leadframe and the integrated circuit. Methods for forming such packages are also described. | 06-16-2011 |
20110140263 | Semiconductor Device and Method of Forming PIP with Inner Known Good Die Interconnected with Conductive Bumps - A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump. A first semiconductor die is mounted to the first conductive layer. A first encapsulant is deposited over the first die and carrier. The semiconductor package is mounted to a substrate. A second semiconductor die is mounted to the first conductive layer opposite the first die. A second encapsulant is deposited over the second die and semiconductor package. A second via is formed in the second encapsulant to expose the conductive bump. A second conductive layer is formed over the second encapsulant and into the second via. The second conductive layer is electrically connected to the second die. | 06-16-2011 |
20110147916 | Semiconductor Chip Device with Solder Diffusion Protection - Various methods and apparatus for establishing thermal pathways for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor chip that has a substrate and a first active circuitry portion extending a first distance into the substrate. A barrier is formed in the first semiconductor chip that surrounds but is laterally separated from the first active circuitry portion and extends into the substrate a second distance greater than the first distance. | 06-23-2011 |
20110147917 | INTEGRATED CIRCUIT PACKAGE WITH EMBEDDED COMPONENTS - This document discusses, among other things, a semiconductor die package having a first and a second discrete components embedded into a dielectric substrate. An integrated circuit (IC) die is surface mounted on a first side of the dielectric substrate. The semiconductor die package includes a plurality of conductive regions on the second side of the dielectric substrate for mounting the semiconductor die package. A plurality of through hole vias couple the IC die to the first and second discrete components and the plurality of conductive regions. | 06-23-2011 |
20110147918 | ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An electronic device includes a wiring board; a semiconductor device arranged at an upper side of the wiring board with an electrically conductive member being arranged therebetween; a covering member arranged at an upper side of the semiconductor device; and a supporting member arranged at a lower side of the wiring board, the supporting member having a convex portion facing the wiring board, the supporting member being connected to the covering member and supporting the wiring board at the convex portion. | 06-23-2011 |
20110156237 | FAN-OUT CHIP SCALE PACKAGE - A chip scale package has a semiconductor die having an array of die bond pads arranged with a bond pad density per unit area, embedded in a molded die support body having a surface supporting an array of conducting contacts, each of the contacts connected by an electrical lead to a corresponding one of the die bond pads. | 06-30-2011 |
20110156238 | SEMICONDUCTOR PACKAGE HAVING CHIP USING COPPER PROCESS - A semiconductor package having chip using copper process is revealed. A chip using copper process is disposed on a substrate. The substrate has a core layer, a copper circuitry with connecting pads, a patterned diffusion barrier, and a solder mask. The copper circuitry is formed on the core layer. The patterned diffusion barrier has such a pattern identical to the one of the copper circuitry that an upper surface of the copper circuitry is completely covered. The substrate further has a bonding layer formed on a portion of the patterned diffusion barrier inside the solder mask's opening. Therefore, diffusion of copper ions from the copper circuitry of the substrate to the active surface of the chip can be avoided to prevent function failure of the chip. | 06-30-2011 |
20110156239 | METHOD FOR MANUFACTURING A FAN-OUT EMBEDDED PANEL LEVEL PACKAGE - A method for manufacturing a fan-out embedded panel-level package. Film having an adhesive on each side is applied to the non-active face of a plurality of semiconductor die while the die are still in wafer form. The die are singulated from the wafer and placed on a carrier, using the adhesive on the unused side of the film to attach the die to the carrier. Encapsulant material is dispensed onto the carrier adjacent to the die, providing an exposed surface on the encapsulant material approximately even with the active faces of the die. Elements of the redistribution layer such as conductors and fan-out pads are applied to this surface. A solder ball array is placed on the fan-out pads and then the die are re-singulated by cutting through the encapsulation material and the carrier, yielding individual electronic packages. | 06-30-2011 |
20110156240 | RELIABLE LARGE DIE FAN-OUT WAFER LEVEL PACKAGE AND METHOD OF MANUFACTURE - A fan-out wafer level package includes a semiconductor die with contact pads positioned on a top surface. A fan-in redistribution layer positioned over the die includes contact pads in electrical communication with the first contact pads of the die. A buffer layer positioned over the fan-in layer includes a plurality of vias, in electrical contact with the contact pads of the fan-in layer. A fan-in redistribution layer is positioned over the buffer layer and includes contact pads on a surface opposite the buffer layer, in electrical communication with the vias. The semiconductor die, fan-in layer, and buffer layer are encapsulated in a molding com-pound layer. Solder contacts, for electrically connecting the semiconductor device to a electronic circuit board, are positioned on contact pads of the fan-out layer. The buffer layer has a substantial thickness, to reduce and distribute shear stresses resulting from thermal mismatch of coefficients of thermal expansion of the semiconductor die and a circuit board. | 06-30-2011 |
20110169157 | SUBSTRATE AND FLIP CHIP PACKAGE WITH GRADATIONAL PAD PITCHES - A flip-chip packaging substrate with gradational pad pitches for flip-chip jointing a bumped chip and a flip chip package utilizing the substrate are revealed. A plurality of connecting pads with non-equal pitches are disposed in an array on the substrate for jointing a plurality of equal-pitch bumps of a bumped chip. The pitches of the connecting pads are numbered according to the distance from a central line through a defined central point. When the defined pitch numbers increase by one, a substrate CTE compensation value is subtracted from the distance from the corresponding connecting pads to the center point so that the connecting pads are able to accurately align to the equal-pitch bumps during reflowing processes. Therefore, the expansion distance from the connecting pads of the substrate to the central point is equal to the expansion distance from the bumps of the bumped chip to the central point to avoid alignment shift between the bumps and the corresponding connecting pads due to CTE mismatch. | 07-14-2011 |
20110169158 | Solder Pillars in Flip Chip Assembly - A semiconductor packaging system includes a semiconductor die and a solder pillar on a side of the semiconductor die extending outwardly from a side of the semiconductor die. The solder pillar electrically couples to an electrical contact of a packaging substrate, even when access to the electrical contact is limited by a mask. | 07-14-2011 |
20110169159 | CHIP PACKAGE AND FABRICATION METHOD THEREOF - A chip package and a fabrication method thereof are provided. The chip package includes a semiconductor substrate, having a first surface and an opposing second surface. A spacer is disposed under the second surface of the semiconductor substrate and a cover plate is disposed under the spacer. A recessed portion is formed adjacent to a sidewall of the semiconductor substrate, extending from the first surface of the semiconductor substrate to at least the spacer. Then, a protection layer is disposed over the first surface of the semiconductor substrate and in the recessed portion. | 07-14-2011 |
20110175217 | Semiconductor Packages Including Die and L-Shaped Lead and Method of Manufacture - The present technology is directed toward semiconductors packaged by electrically coupling a plurality of die to an upper and lower lead frame. The opposite edges of each corresponding set of leads in the upper lead frame are bent. The leads in the upper lead frame are electrically coupled between respective contacts on respective die and respective lower portion of the leads in the lower lead frame. The bent opposite edges of each corresponding set of leads of the upper lead frame support the upper lead frame before encapsulation, for achieving a desired position of the plurality of die between the leads of the upper and lower lead frames in the packaged semiconductor. After the encapsulated die are separated, the upper leads have an L-shape and electrically couple die contacts on upper side of the die to leads on the lower side of the die so that the package contacts are on the same side of the semiconductor package. | 07-21-2011 |
20110180921 | INTEGRATED CIRCUIT PACKAGE - A method of manufacturing a ball grid array, BGA, integrated circuit package, comprising forming a double sided printed circuit board, PCB, with blind vias interconnecting electrically the circuits on the opposed surfaces of the PCB, with at least one through-hole to allow fluid or gas to pass through the PCB, and an integrated circuit connected to the printed circuit on one side of the PCB; soldering a lid onto the said one side of the PCB to enclose the integrated circuit, whilst allowing thermally expanding gas or fluid to escape through the or each through-hole, whereby to form a package which is hermetically sealed except for the or each through-hole, and which has a cavity between the integrated circuit and the lid; applying a BGA to the side of the PCB opposed to the said one side, whereby to solder the balls of the BGA to respective portions of the printed circuit and to align one of the balls axially with each through-hole; and soldering the ball or balls into the through-hole, or into each respective through-hole, to hermetically seal the package. | 07-28-2011 |
20110186982 | SURFACE MOUNT DIODE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a surface mount diode including a diode chip including a first main surface and a second main surface, a cathode electrode including a first internal electrode portion on the first main surface and a first external electrode portion on the first internal electrode portion, an anode electrode including a second internal electrode portion on the second main surface and a second external electrode portion on the second internal electrode portion, a thickness of the second external electrode portion being the same as a thickness of the first external electrode portion, a first covering member covering a periphery surface of one of the internal electrode portions and a periphery surface of the diode chip, and a second covering member covering a periphery surface of the other of the internal electrode portions, the second covering member being different in color from the first covering member. | 08-04-2011 |
20110198745 | WAFER-LEVEL PACKAGED DEVICE HAVING SELF-ASSEMBLED RESILIENT LEADS - A wafer-level packaged semiconductor device is described. In an implementation, the device includes one or more self-assembled resilient leads disposed on an integrated circuit chip. Each of the resilient leads are configured to move from a first position wherein the resilient lead is held adjacent to the chip and a second position wherein the resilient lead is extended away from the chip to interconnect the chip to a printed circuit board. A guard is provided to protect the resilient leads when the resilient leads are in the first position. One or more attachment bumps may also be furnished to facilitate attachment of the device to the printed circuit board. | 08-18-2011 |
20110204507 | TWO-SHELF INTERCONNECT - Consistent with the present disclosure, a package is provided that includes a housing having a recessed portion to accommodate an integrated circuit or chip. The housing has an inner periphery that defines or delineates the recessed portion. The inner periphery may be stepped and includes first and second surfaces that are spaced vertically from one another and extend in respective parallel planes, for example, to thereby constitute first and second shelves. First bonding pads or contacts (“housing pads”) may be provided on the first surface, which may electrically connect or interconnect with first pads on the integrated circuit (“IC pads”), and second housing pads may be provided on the second surface, which can electrically connect or interconnect with second IC pads. Thus, the IC pads connect to corresponding housing pads on the inner periphery of the housing that are above and below one another. Since the housing pads are not provided on the same surface, the number of housing pads on each step or shelf of the periphery can be reduced, and the housing pads can be spaced from one another by a spacing or pitch that is greater than that of the IC pads. Accordingly, the dimensions and spacing of the housing pads may comply with relevant design rules, while providing connection to an increased number of IC pads. | 08-25-2011 |
20110204508 | SEMICONDUCTOR PACKAGING SYSTEM WITH AN ALIGNED INTERCONNECT AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of a semiconductor packaging system includes: providing a base substrate having edges; mounting an electrical interconnect on the base substrate; and applying an encapsulant having a reference marker and an opening over the electrical interconnect, the reference marker around the electrical interconnect based on physical locations of the edges. | 08-25-2011 |
20110204509 | Semiconductor Device and Method of Forming IPD in Fan-Out Level Chip Scale Package - A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer. | 08-25-2011 |
20110210440 | STACKABLE ELECTRONIC PACKAGE AND METHOD OF FABRICATING SAME - An electronic package includes a first layer having a first surface, the first layer includes a first device having a first electrical node, and a first contact pad in electrical communication with the first electrical node and positioned within the first surface. The package includes a second layer having a second surface and a third surface, the second layer includes a first conductor positioned within the second surface and a second contact pad positioned within the third surface and in electrical communication with the first conductor. A first anisotropic conducting paste (ACP) is positioned between the first contact pad and the first conductor to electrically connect the first contact pad to the first conductor such that an electrical signal may pass therebetween. | 09-01-2011 |
20110221054 | Semiconductor Device and Method of Forming Conductive Vias Through Interconnect Structures and Encapsulant of WLCSP - A semiconductor device has a semiconductor die mounted over the carrier. An encapsulant is deposited over the carrier and semiconductor die. The carrier is removed. A first interconnect structure is formed over the encapsulant and a first surface of the die. A second interconnect structure is formed over the encapsulant and a second surface of the die. A first protective layer is formed over the first interconnect structure and second protective layer is formed over the second interconnect structure prior to forming the vias. A plurality of vias is formed through the second interconnect structure, encapsulant, and first interconnect structure. A first conductive layer is formed in the vias to electrically connect the first interconnect structure and second interconnect structure. An insulating layer is formed over the first interconnect structure and second interconnect structure and into the vias. A discrete semiconductor component can be mounted to the first interconnect structure. | 09-15-2011 |
20110221055 | Semiconductor Device and Method of Forming Repassivation Layer with Reduced Opening to Contact Pad of Semiconductor Die - A semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive layer. A via is formed through the repassivation layer to the first conductive layer. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A second insulating layer is formed over the repassivation layer and encapsulant. A second conductive layer is formed over the repassivation layer and first conductive layer. A third insulating layer is formed over the second conductive layer and second insulating layer. An interconnect structure is formed over the second conductive layer. | 09-15-2011 |
20110227211 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH PACKAGE LEADS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a base panel having a first side with a cavity and a second side opposite the first side; connecting an integrated circuit device and the first side; applying a resist mask having an opening on the second side, the opening offset from the cavity; forming a bump contact in the opening; applying an encapsulation in the cavity over the integrated circuit device and the first side; and forming a package lead by removing a portion of the base panel under the cavity, a flared tip of the package lead intersecting a base side of the encapsulation. | 09-22-2011 |
20110233751 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH ENCAPSULATION AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a rounded interconnect on a package carrier having an integrated circuit attached thereto, the rounded interconnect having an actual center; forming an encapsulation over the package carrier covering the rounded interconnect; removing a portion of the encapsulation over the rounded interconnect with an ablation tool; calculating an estimated center of the rounded interconnect; aligning the ablation tool over the estimated center; and exposing a surface area of the rounded interconnect with the ablation tool. | 09-29-2011 |
20110233752 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH AN INTERMEDIATE PAD AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming an elevated contact above and between a lead and a die pad that is coplanar with the lead; connecting an integrated circuit and the lead; attaching a jumper interconnect between the elevated contact and the lead; and forming an encapsulant over the integrated circuit, the lead, the die pad, the elevated contact, and the jumper interconnect, the encapsulant having a recess in a base side with the elevated contact exposed in the recess and the lead exposed from the base side. | 09-29-2011 |
20110233753 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH LEADS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a paddle, an inner post adjacent to the paddle, a jumper pad, and an outer post, with the jumper pad between the inner post and the outer post; mounting an integrated circuit over a paddle first side, the paddle first side co-planar with the outer post; connecting a first jumper interconnect between the integrated circuit and the jumper pad; connecting a second jumper interconnect between the jumper pad and the outer post; and forming an encapsulation over paddle, the integrated circuit, the first jumper interconnect, the jumper pad, and the second jumper interconnect. | 09-29-2011 |
20110241196 | COMPLIANT SPRING INTERPOSER FOR WAFER LEVEL THREE DIMENSIONAL (3D) INTEGRATION AND METHOD OF MANUFACTURING - The present invention is an apparatus for integrating multiple devices. The apparatus includes a substrate having a first via and a second via, a semiconductor chip positioned on a top portion of the substrate and positioned between the first via and the second via, first and second bumps positioned on the semiconductor chip, and an interposer wafer having a first interposer spring assembly and a second interposer spring assembly, the first interposer spring assembly having a first interposer spring and a first electrical connection attached to the first interposer spring, and the second interposer spring assembly having a second interposer spring and a second electrical connection attached to the second interposer spring. | 10-06-2011 |
20110254146 | Semiconductor Device and Method of Forming Electrical Interconnection Between Semiconductor Die and Substrate with Continuous Body of Solder Tape - A semiconductor device has a flipchip type semiconductor die with contact pads and substrate with contact pads. A flux material is deposited over the contact pads of the semiconductor die and contact pads of the substrate. A solder tape formed as a continuous body of solder material with a plurality of recesses is disposed between the contact pads of the semiconductor die and substrate. The solder tape is brought to a liquidus state to separate a portion of the solder tape outside a footprint of the contact pads of the semiconductor die and substrate under surface tension and coalesce the solder material as an electrical interconnect substantially within the footprint of the contact pads of the semiconductor die and substrate. The contact pads on the semiconductor die and substrate can be formed with an extension or recess to increase surface area of the contact pads. | 10-20-2011 |
20110254147 | SEMICONDUCTOR EQUIPMENT AND METHOD OF MANUFACTURING THE SAME - To provide a semiconductor equipment having high heat-transfer effect and breakdown voltage, and a method of manufacturing the same. The semiconductor equipment includes: a sealed container; a stem connected to the sealed container via a stem peripheral portion; and a semiconductor chip mounted on a top surface of the stem, inside the sealed container. The semiconductor chip is electrically connected to a lead provided to the stem, the stem peripheral portion, which is of a material that is different from the material of stem and the same as the material of the sealed container, is bonded along a periphery of the stem, and the sealed container is filled with a working fluid including at least one of ethanol, a perfluorocarbon, and a fluoroether. | 10-20-2011 |
20110278714 | CHIP PACKAGE DEVICE AND MANUFACTURING METHOD THEREOF - A chip package device includes a substrate having a chip bonding area and at least one contact pad, a chip having an active surface and an inactive surface, at least one wire, an adhesive layer, a heat dissipation element, and an encapsulation. The chip is disposed on the chip bonding area with its inactive surface facing the substrate. The chip includes at least one bonding pad disposed on the active surface. The wire correspondingly connects the at least one bonding pad and the at least one contact pad. The adhesive layer covers the active surface of the chip and encloses a portion of the wire extending over the bonding pad. The heat dissipation element is attached to the adhesive layer and covers the chip. The encapsulation partially encloses the periphery of the assembly including the chip, the adhesive and the heat dissipation element, and has an indented opening to expose the surface of the heat dissipation element. | 11-17-2011 |
20110285008 | SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS UNIT - A semiconductor apparatus including: a substrate | 11-24-2011 |
20110309487 | SEMICONDUCTOR DEVICE, A METHOD OF MANUFACTURING THE SAME AND AN ELECTRONIC DEVICE - The semiconductor device is high in both heat dissipating property and connection reliability in mounting. The semiconductor device includes a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member. | 12-22-2011 |
20110309488 | Semiconductor Device and Method of Forming Dam Material Around Periphery of Die to Reduce Warpage - A semiconductor device has a carrier. A first semiconductor die is mounted to the carrier with an active surface of the first semiconductor die oriented toward the carrier. A dam structure is formed on the carrier and around the first semiconductor die by depositing dam material on the carrier with screen printing, electrolytic plating, electroless plating, or spray coating. An encapsulant is deposited over the carrier and around the first semiconductor die. The encapsulant has a coefficient of thermal expansion (CTE) that corresponds to a CTE of the dam material. The CTE of the dam material is equal to or less than the CTE of the encapsulant. The carrier is removed to expose the active surface of the first semiconductor die with the dam structure stiffening a periphery of the first semiconductor die. The semiconductor device is singulated through the dam structure. | 12-22-2011 |
20110316139 | PACKAGE FOR A WIRELESS ENABLED INTEGRATED CIRCUIT - An integrated circuit (IC) device is provided. The IC device includes a substrate, an IC die coupled to the substrate, and a first wirelessly enabled functional block formed on the IC die. The first wirelessly enabled functional block is configured to wirelessly communicate with a second wirelessly enabled functional block formed on the substrate. | 12-29-2011 |
20120007228 | CONDUCTIVE PILLAR FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURE - An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer. | 01-12-2012 |
20120018870 | CHIP SCALE PACKAGE AND FABRICATION METHOD THEREOF - A fabrication method of a chip scale package includes: disposing a chip on a carrier board and embedding the chip into a composite board having a hard layer and a soft layer; and removing the carrier board so as to perform a redistribution layer (RDL) process, thereby solving the conventional problems caused by directly attaching the chip on an adhesive film, such as film-softening caused by heat, encapsulant overflow, chip deviation and contamination, etc., all of which may result in poor electrical connection between the wiring layer and the chip electrode pads in the subsequent RDL process and even waste products as a result. | 01-26-2012 |
20120025365 | MICROELECTRONIC PACKAGES WITH NANOPARTICLE JOINING - A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof. | 02-02-2012 |
20120068327 | MULTI-FUNCTION AND SHIELDED 3D INTERCONNECTS - A microelectronic unit includes a semiconductor element consisting essentially of semiconductor material and having a front surface, a rear surface, a plurality of active semiconductor devices adjacent the front surface, a plurality of conductive pads exposed at the front surface, and an opening extending through the semiconductor element. At least one of the conductive pads can at least partially overlie the opening and can be electrically connected with at least one of the active semiconductor devices. The microelectronic unit can also include a first conductive element exposed at the rear surface for connection with an external component, the first conductive element extending through the opening and electrically connected with the at least one conductive pad, and a second conductive element extending through the opening and insulated from the first conductive element. The at least one conductive pad can overlie a peripheral edge of the second conductive element. | 03-22-2012 |
20120086114 | MILLIMETER DEVICES ON AN INTEGRATED CIRCUIT - An integrated circuit (IC) device arrangement includes a substrate, an IC die coupled to the substrate, an antenna coupled to the IC die, and a first wirelessly enabled functional block coupled to the IC die. The wirelessly enabled functional block is configured to wirelessly communicate with a second wirelessly enabled functional block coupled to the substrate. The antenna is configured to communicate with another antenna coupled to another device. | 04-12-2012 |
20120126389 | ENHANCED STACKED MICROELECTRONIC ASSEMBLIES WITH CENTRAL CONTACTS AND VIAS CONNECTED TO THE CENTRAL CONTACTS - The microelectronic assembly includes a first microelectronic element having a front surface, a plurality of contacts exposed at the front surface, and a rear surface remote from the front surface; a second microelectronic element having a front surface facing the rear surface of the first microelectronic element and projecting beyond an edge of the first microelectronic element, the second microelectronic element having a plurality of contacts exposed at its front surface; a dielectric region overlying the front surfaces of the microelectronic elements, the dielectric region having a major surface facing away from the microelectronic elements; metallized vias within openings in the dielectric region extending from the plurality of contacts of the first and second microelectronic elements; and leads extending along a major surface of the dielectric region from the vias to terminals exposed at the major surface. | 05-24-2012 |
20120146209 | PACKAGING SUBSTRATE HAVING THROUGH-HOLED INTERPOSER EMBEDDED THEREIN AND FABRICATION METHOD THEREOF - A packaging substrate having a through-holed interposer embedded therein is provided, which includes: a molding layer having opposite first and second surfaces; a through-holed interposer embedded in the molding layer and flush with the second surface; a redistribution-layer structure embedded in the molding layer and disposed on the through-holed interposer and having a plurality of electrode pads exposed from the first surface of the molding layer; and a built-up structure disposed on the second surface of the molding layer and electrically connected to the through-holed interposer. By embedding the through-holed interposer in the molding layer and forming the built-up structure on the second surface of the molding layer, the present invention eliminates the need of a core board and reduces the thickness of the overall structure. Further, since the through-holed interposer has a CIE close to or the same as that of a silicon wafer, the structural reliability during thermal cycle testing is improved. | 06-14-2012 |
20120161308 | Protecting T-Contacts of Chip Scale Packages from Moisture - A method includes performing a first die-saw on a package structure includes forming a first and a second metal lead extending into a trench of a package structure, wherein the first and the second metal leads contact the side edges of contact pads that are in devices in the package structure. The first and the second metal leads are interconnected through a connecting metal portion. A pre-cut is performed to cut the connecting metal portion to separate the first and the second metal leads, wherein remaining portions of the connecting metal portion have edges after the pre-cut. A dielectric coating is formed over the first and the second metal leads. A die-saw is performed to saw apart the package structure, so that the first and the second dies are separated into separate piece. In each of the resulting pieces, the edges of the remaining portions of the connecting metal portion are covered by remaining portions of the first dielectric coating. | 06-28-2012 |
20120168929 | LOW COST THERMALLY ENHANCED HYBRID BGA AND METHOD OF MANUFACTURING THE SAME - A semiconductor package is formed having a substrate juxtaposed on at least two sides of a semiconductor die. Both the substrate and the semiconductor die are affixed to a conductive layer that draws heat generated during use of the semiconductor package away from the semiconductor die and the substrate. There are also electrical contacts affixed to the substrate and the semiconductor die. The electrical contacts facilitate electrical connection between the semiconductor die, the substrate, and any external devices or components making use of the semiconductor die. The substrate, semiconductor die, and at least a portion of some of the electrical contacts are enclosed by an encapsulating layer insulating the components. Portions of the electrical contacts not enclosed by the encapsulating layer are affixed to an outside device, such as a printed circuit board. | 07-05-2012 |
20120175763 | INTEGRATED CIRCUIT PACKAGING INCLUDING AUXILIARY CIRCUITRY - An integrated circuit package includes a package core and a primary circuitry chip mounted on the package core. The primary circuitry chip has an active surface in which the core circuitry is fabricated. The active surface of the primary circuitry chip faces the package core and includes contacts. The integrated circuit package further includes an auxiliary circuit chip assembled to the package core and having contacts facing and electrically connected to the contacts of the primary circuitry chip. | 07-12-2012 |
20120181682 | SEMICONDUCTOR DEVICE - In some aspects of the invention, an insulating substrate fixed onto a metal base plate can include an insulating plate and metal foils. A semiconductor element can be disposed on each of the metal foils. External connection terminals can be fixed to a set of ends of terminal holders, respectively. The other ends of the terminal holders can be bonded to the metal foils, respectively. External connection terminals which are main terminals through which main current flows are disposed on a lid. By preparing a plurality of lids having different layouts of the external connection terminals, in which the external connection terminals are connected to the terminal holders in the resin case, respectively, and exchanging the lids, the positions of the external connection terminals can be easily changed. | 07-19-2012 |
20120217628 | METAL BUMPS FOR COOLING DEVICE CONNECTION - The mechanisms for forming metal bumps to connect to a cooling device (or a heat sink) described herein enable substrates with devices to dissipate heat generated more efficiently. In addition, the metal bumps allow customization of bump designs to meet the needs of different chips. Further, the usage of metal bumps between the semiconductor chip and cooling device enables advanced cooling by passing a cooling fluid between the bumps. | 08-30-2012 |
20120217629 | Semiconductor Device and Method of Forming a Wafer Level Package Structure Using Conductive Via and Exposed Bump - A semiconductor device has a carrier. A semiconductor wafer including a semiconductor die is mounted to the carrier with an active surface of the semiconductor die facing away from the carrier. A plurality of bumps is formed over the active surface of the semiconductor die. An opening is formed in a periphery of the semiconductor die. An encapsulant is deposited over the carrier and semiconductor die, in the opening, and around the plurality of bumps such that an exposed portion of the plurality of bumps is devoid of encapsulant. A conductive via is formed through the encapsulant, within the opening, and extends to the carrier. A conductive layer is formed over the encapsulant and electrically connects to the conductive via and the exposed portion of the plurality of bumps. The carrier is removed to expose an end of the conductive via. | 08-30-2012 |
20120267773 | Functional Capping - A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer. Finally the wafer is singulated to individual devices. | 10-25-2012 |
20120299174 | Semiconductor Device and Method of Stacking Semiconductor Die in Mold Laser Package Interconnected By Bumps and Conductive Vias - A semiconductor wafer contains a plurality of first semiconductor die. The semiconductor wafer is mounted to a carrier. A channel is formed through the semiconductor wafer to separate the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. An encapsulant is deposited over the carrier and first semiconductor die and into the channel while a side portion and surface portion of the second semiconductor die remain exposed from the encapsulant. A first conductive via is formed through the encapsulant in the channel. A second conductive via is formed through the encapsulant over a contact pad of the first semiconductor die. A conductive layer is formed over the encapsulant between the first and second conductive vias. An insulating layer is formed over the conductive layer and encapsulant. The carrier is removed. An interconnect structure is formed over the first conductive via. | 11-29-2012 |
20120306067 | Thermally Enhanced Integrated Circuit Package - According to an embodiment, an integrated circuit package comprises a chip, a thermal component, and a molding compound. The chip comprises an active surface and a backside surface opposite the active surface. The thermal component is physically coupled to the backside surface of the chip. The molding compound encapsulates the chip, and an exposed surface of the thermal component is exposed through the molding compound. Another embodiment is a method to form an integrated circuit package. | 12-06-2012 |
20120313235 | Semiconductor Devices With Moving Members and Methods for Making the Same - The present disclosure provides an embodiment of a micro-electro-mechanical system (MEMS) structure, the MEMS structure comprising a MEMS substrate; a first and second conductive plugs of a semiconductor material disposed on the MEMS substrate, wherein the first conductive plug is configured for electrical interconnection and the second conductive plug is configured as an anti-stiction bump; a MEMS device configured on the MEMS substrate and electrically coupled with the first conductive plug; and a cap substrate bonded to the MEMS substrate such that the MEMS device is enclosed therebetween. | 12-13-2012 |
20130056862 | Semiconductor Device and Method of Forming a Low Profile Dual-Purpose Shield and Heat-Dissipation Structure - A semiconductor device has a substrate including a recess and a peripheral portion with through conductive vias. A first semiconductor die is mounted over the substrate and within the recess. A planar heat spreader is mounted over the substrate and over the first semiconductor die. The planar heat spreader has openings around a center portion of the planar heat spreader and aligned over the peripheral portion of the substrate. A second semiconductor die is mounted over the center portion of the planar heat spreader. A third semiconductor die is mounted over the second semiconductor die. First and second pluralities of bond wires extend from the second and third semiconductor die, respectively, through the openings in the planar heat spreader to electrically connect to the through conductive vias. An encapsulant is deposited over the substrate and around the planar heat spreader. | 03-07-2013 |
20130062751 | Power Module and Power Module Manufacturing Method - A power module includes: a sealing body including a semiconductor element having a plurality of electrode surfaces, a first conductor plate connected to one electrode surface of the semiconductor element via solder, and a sealing material for sealing the semiconductor element and the first conductor plate, the sealing body having at least a first surface and a second surface on the opposite side of the first surface; and a case for housing the sealing body. The case is configured by a first heat radiation plate opposed to the first surface of the sealing body, a second heat radiation plate opposed to the second surface of the sealing body, and an intermediate member that connects the first heat radiation plate and the second heat radiation plate. The intermediate member has a first thin section having thickness smaller than the thickness of the first heat radiation plate, more easily elastically deformed than the first heat radiation plate, and formed to surround the first heat radiation plate. The sealing body is pressed against and fixed to the second heat radiation plate via the first heat radiation plate by elastic force generated in the first thin section. | 03-14-2013 |
20130099368 | CHIP CARRIERS, SEMICONDUCTOR DEVICES INCLUDING THE SAME, SEMICONDUCTOR PACKAGES INCLUDING THE SAME, AND METHODS OF FABRICATING THE SAME - Chip carriers are provided. The chip carrier includes a carrier body having a cavity therein and at least one conductive through silicon via (TSV) penetrating the carrier body under the cavity. The cavity includes an uneven sidewall surface profile. The at least one conductive through silicon via (TSV) is exposed at a bottom surface of the carrier body opposite to the cavity. Related methods are also provided. | 04-25-2013 |
20130105962 | THERMAL DISSIPATION IN CHIP | 05-02-2013 |
20130200509 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a substrate including a mounting surface having a plurality of ground pads, a semiconductor chip disposed on the mounting surface, a conductive connection part connected to at least one of the plurality of ground pads and having a greater width at a center than at an end, a molding member exposing a top surface of the conductive connection part while wrapping the mounting surface, the conductive connection part and the semiconductor chip, and a heat slug disposed on the molding member and connected to the top surface of the conductive connection part. | 08-08-2013 |
20130214404 | SEMICONDUCTOR MODULE - A semiconductor module includes a semiconductor element, a case member, a cylindrical body, a lid member, a bus bar, and an insulating plate. The case member includes a bottom member and an extended portion. Eight protruding portions are formed on an outer peripheral surface of the cylindrical body. Eight recessed portions are formed on an inner surface of a central hole of the bus bar. The cylindrical body is inserted into the central hole of the bus bar. The protruding portions of the cylindrical body are engaged with the recessed portions of the bus bar. A direction in which an extended portion of the bus bar extends is fixed in one direction, from among a plurality of directions in a circumferential direction of the cylindrical body, by engagement of the protruding portions with the recessed portions. | 08-22-2013 |
20130214405 | Component and Method for Producing a Component - A component includes a substrate, a chip and a frame. The frame is bonded to the substrate and the chip rests on the frame. A sealing layer on parts of the frame and the chip is designed to hermetically seal a volume enclosed by the substrate, the chip and the metal frame. | 08-22-2013 |
20130228912 | Apparatus for Chip Thermal Stress Relief - Various stress relief structures are provided for effectively reducing thermal stress on a semiconductor chip in a chip package. Trenches on a metal substrate are created in groups in two-dimension, where each trench is opened from top or bottom surface of the metal substrate and in various shapes. The metal substrate is partitioned into many smaller substrates depending on the number of trench groups and partitions, and is attached to a semiconductor chip for stress relief. In an alternative embodiment, a plurality of cylindrical metal structures are used together with a metal substrate in a chip package for the purpose of heat removal and thermal stress relief on a semiconductor chip. In another alternative embodiment, a metal foam is used together with a semiconductor chip to create a chip package. In another alternative embodiment, a semiconductor chip is sandwiched between a heat sink and a circuit board by solder bumps directly with underfill on the circuit board. | 09-05-2013 |
20130228913 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. | 09-05-2013 |
20130234311 | Semiconductor component that includes a protective structure - In accordance with an embodiment a semiconductor component includes an electrically conductive structure formed over a portion of a semiconductor material. An electrical interconnect having a top surface and opposing edges contacts the electrically conductive structure. A protective structure is formed on the top surface and the opposing edges of the electrical interconnect and over a portion of the electrically conductive structure, wherein the protective structure forms a seal that protects the electrical interconnect. | 09-12-2013 |
20130264698 | SEMICONDUCTOR DEVICE WITH HEAT DISSIPATION - A semiconductor assembly includes a semiconductor device and a connecting structure. The semiconductor device includes an interconnect region over a semiconductor substrate and a pillar layer having a plurality of pillar contacts on the interconnect region. The pillar layer also includes a plurality of radial heat conductors that have at least a portion overlying a heat source that is within and overlies the semiconductor substrate. Each radial heat conductor extends a length radially from the heat source that is at least twice as great as the diameter of the pillars. The connecting structure includes a connecting substrate that supports a first corresponding pillar contact that is in contact with a first pillar contact of the plurality of pillar contacts. The first connecting structure further includes a heat conductor, supported by the substrate, in contact with a first radial heat conductor of the plurality of radial heat conductors. | 10-10-2013 |
20130270689 | SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MODULE, AND MOUNTING STRUCTURE THEREOF - Provided are a semiconductor package capable of packaging and modularizing power semiconductor devices which are difficult to integrate due to heat generation, a semiconductor package module using the same, and a mounting structure thereof. The semiconductor package includes: a common connection terminal formed to have a flat plate shape; first and second electronic devices respectively bonded to both surfaces of the common connection terminals; first and second connection terminals having a flat plate shape and bonded to the first electronic device; and a third connection terminal having a flat plate shape and bonded to the second electronic device. | 10-17-2013 |
20130285229 | THROUGH-HOLE ELECTRONIC DEVICE WITH DOUBLE HEAT-SINK - An electronic device includes a first chip and a second chip, where each chip has a first conduction terminal on a first surface and a second conduction terminal on a second surface. An insulating body surrounds the first and second chip, a first heat-sink coupled with the first conduction terminals of the first and second chip, and a second heat-sink coupled with the second conduction terminals of the first and second chip. A portion of the first heat-sink and/or the second heat-sink being exposed from the insulating body. The electronic device includes a first conductive lead and a second conductive lead exposed from the insulating body for through-hole mounting of the electronic device on an electronic board, the first conductive lead being coupled with the first heat-sink and the second conductive lead being coupled with the second heat-sink. | 10-31-2013 |
20130285230 | ELECTRONIC DEVICE - A power device includes a chip of semiconductor material and a further chip of semiconductor material on each of which at least one power transistor is integrated; each chip comprises a first conduction terminal on a first surface, and a second conduction terminal and a control terminal on a second surface opposite the first surface, and an insulating body embedding said chip and said further chip. In the solution according to one or more embodiments of the present disclosure, the first surface of said chip faces the second surface of said further chip, and the power device further comprises a first heat-sink arranged between said chip and said further chip and electrically coupled with the first conduction terminal of said chip and with the second conduction terminal of said further chip, the control terminal of said further chip being electrically insulated from the first heat-sink. | 10-31-2013 |
20130328183 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A GLASS SUBSTRATE - A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer. | 12-12-2013 |
20140008782 | SEMICONDUCTOR UNIT - A semiconductor unit includes a base having a surface where a first insulation layer is disposed, a second insulation layer spaced apart from the first insulation layer to form a region therebetween and disposed parallel to the surface of the base where the first insulation layer is disposed, a single conductive layer disposed across the first insulation layer and the second insulation layer, and a semiconductor device bonded to the conductive layer. | 01-09-2014 |
20140008783 | Semiconductor Device and Method of Forming Electrical Interconnection Between Semiconductor Die and Substrate with Continuous Body of Solder Tape - A semiconductor device has a flipchip type semiconductor die with contact pads and substrate with contact pads. A flux material is deposited over the contact pads of the semiconductor die and contact pads of the substrate. A solder tape formed as a continuous body of solder material with a plurality of recesses is disposed between the contact pads of the semiconductor die and substrate. The solder tape is brought to a liquidus state to separate a portion of the solder tape outside a footprint of the contact pads of the semiconductor die and substrate under surface tension and coalesce the solder material as an electrical interconnect substantially within the footprint of the contact pads of the semiconductor die and substrate. The contact pads on the semiconductor die and substrate can be formed with an extension or recess to increase surface area of the contact pads. | 01-09-2014 |
20140021597 | High Speed Signal Conditioning Package - A package and integrated circuit assembly is configured to perform signal conditioning on a signal. The assembly includes a line card having line card contacts that correspond to conductors in the line card connector. Two or more integrated circuits are configured to perform signal conditioning on the signal and the two or more integrated circuits are configured within a package into at least a first row and a second row on the package. The package includes a grid array of bonding pads to electrically connect to the two or more integrated circuits through bond wires or down bonds such that the structure of the grid array corresponds in physical arrangement or bond pad pitch to the line card contacts. This assembly also includes an electrical connection from the two or more integrated circuits to the line card through the package. | 01-23-2014 |
20140021598 | METHODS AND ARRANGEMENTS RELATING TO SEMICONDUCTOR PACKAGES INCLUDING MULTI-MEMORY DIES - In an embodiment, there is provided a packaging arrangement comprising a substrate; a multi-memory die coupled to the substrate, wherein the multi-memory die comprises multiple individual memory dies, and each of the multiple individual memory dies is defined as an individual memory die within a wafer of semiconductor material during production of memory dies, and the multi-memory die is created by singulating the wafer of semiconductor material into memory dies, where at least one of the memory dies is the multi-memory die that includes the multiple individual memory dies that are still physically connected together; and a semiconductor die coupled to the multi-memory die and the substrate, wherein the semiconductor die is configured as a system on a chip, wherein at least one of the multi-memory die and the semiconductor die is attached to the substrate. | 01-23-2014 |
20140027896 | SEMICONDUCTOR DEVICE PACKAGE WITH CAP ELEMENT - A method of assembling a semiconductor device includes providing a substrate having an array of substrate elements linked by substrate corner elements and separated by slots extending between the corner elements. Semiconductor dies are positioned on the substrate elements. A cap, frame and contact structure is provided that has a corresponding array of caps supported by corner legs linking the caps to frame corner elements, frame elements linking the frame corner elements, and sets of electrical contact elements supported by the frame elements. The cap, frame and contact structure is fitted on the substrate with the caps extending over corresponding dies, the frame corner elements extending over the substrate corner elements, and the sets of electrical contact elements disposed in the slots. The dies are connected electrically with the electrical contact elements and the assembly is encapsulated and singulated. Singulating removes the frame elements. | 01-30-2014 |
20140035121 | ENHANCED STACKED MICROELECTRONIC ASSEMBLIES WITH CENTRAL CONTACTS AND IMPROVED THERMAL CHARACTERISTICS - A microelectronic assembly includes a dielectric element that has oppositely-facing first and second surfaces and first and second apertures extending between the surfaces. The dielectric element further includes conductive elements. First and second microelectronic elements are stacked one on top of the another. The second microelectronic element has a plurality of contacts at a surface, which is spaced from the first surface of the dielectric element. Leads extend from contacts of the first and second microelectronic elements through respective apertures to at least some of the conductive elements. A heat spreader is thermally coupled to at least one of the first microelectronic element or the second microelectronic element. | 02-06-2014 |
20140042609 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a connection structure in which a power semiconductor chip is mounted on an insulating substrate having conductor patterns bonded to front and rear surfaces thereof and the insulating substrate is bonded to a heat-dissipating base member to dissipate heat generated from the power semiconductor chip to outside. The conductor pattern bonded to the heat-dissipating base member is formed such that a thickness of a circumferential portion of a bonding surface of the conductor pattern bonded to the insulating substrate is less than that of a center of the bonding portion. | 02-13-2014 |
20140054760 | PACKAGE-ON-PACKAGE SEMICONDUCTOR DEVICE - A semiconductor device and method of forming the semiconductor device, the semiconductor device includes a package having at least one first die and at least one second die. The semiconductor device further includes a set of conductive elements electrically connecting the at least one first and the at least one second die to a substrate. The semiconductor device further includes a thermal contact pad between the at least one first die and the at least one second die, to thermally isolate the at least one first die from the at least one second die. | 02-27-2014 |
20140054761 | On-Chip Heat Spreader - A three dimensional (3D) stacked chip structure with chips having on-chip heat spreader and method of forming are described. A 3D stacked chip structure comprises a first die having a first substrate with a dielectric layer formed on a front surface. One or more bonding pads and a heat spreader may be simultaneously formed in the dielectric layer. The first die is bonded with corresponding bond pads on a surface of a second die to form a stacked chip structure. Heat generated in the stacked chip structure may be diffused to the edges of the stacked chip structure through the heat spreader. | 02-27-2014 |
20140077349 | Thermally Enhanced Package with Lid Heat Spreader - A method and apparatus are provided for manufacturing a lead frame based thermally enhanced package ( | 03-20-2014 |
20140077350 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - Provided is a semiconductor device including a wiring board including a plurality of alternately stacked insulating layers and wiring layers, the wiring layers being connected to each other by via-plugs, a semiconductor chip mounted on the wiring board, a heat-dissipating member that is disposed on a side opposite to the wiring board with the semiconductor chip sandwiched between the wiring board and the heat-dissipating member, and dissipates heat generated in the semiconductor chip, a sealing resin layer that is bonded to the wiring board and the heat-dissipating member between the wiring board and the heat-dissipating member, and seals the semiconductor chip from an outer periphery side, and a heat-conducting material that is bonded to the semiconductor chip and the heat-dissipating member between the semiconductor chip and the heat-dissipating member inside the sealing resin layer and conducts heat generated in the semiconductor chip to the heat-dissipating member. | 03-20-2014 |
20140077351 | MICROELECTRONIC PACKAGES WITH NANOPARTICLE JOINING - A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof. | 03-20-2014 |
20140084441 | STACKED-DIE PACKAGE INCLUDING DIE IN PACKAGE SUBSTRATE - Some embodiments described herein include apparatuses and methods of forming such apparatuses. In one such embodiment, an apparatus may include a substrate, a first die, and a second die coupled to the first die and the substrate. The substrate may include an opening. At least a portion of the die may occupy at least a portion of the opening in the substrate. Other embodiments including additional apparatuses and methods are described. | 03-27-2014 |
20140084442 | Semiconductor Packages Having a Guide Wall and Related Systems and Methods - A semiconductor package includes a first package board, a first semiconductor chip arranged on the first package board, a heat transfer layer arranged on the first semiconductor chip, a heat spreader arranged on the heat transfer layer, and a housing having a molding part arranged on the first package board and directly surrounding side surfaces of the first semiconductor chip and a guide wall arranged on the molding part, with the guide wall spaced apart from the heat spreader and surrounding side surfaces of the heat spreader. | 03-27-2014 |
20140084443 | ASSEMBLY INCLUDING PLURAL THROUGH WAFER VIAS, METHOD OF COOLING THE ASSEMBLY AND METHOD OF FABRICATING THE ASSEMBLY - An assembly includes a chip including an integrated circuit, a casing including an integrated circuit including plural active elements and having an upper portion formed on a side of the chip and lower portion formed on another side of the chip, plural through-wafer vias (TWVs) for electrically connecting the integrated circuit of the chip and the integrated circuit of the casing, and a card connected to the casing for electrically connecting the casing to a system board. | 03-27-2014 |
20140091451 | SEMICONDUCTOR DEVICE COMPRISING A CRACK STOP STRUCTURE - A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes. | 04-03-2014 |
20140110831 | MULTI-CHIP PACKAGE AND METHOD OF MANUFACTURING THE SAME - A multi-chip package may include a package substrate, an interposer chip, a first semiconductor chip, a thermal dissipation structure and a second semiconductor chip. The interposer chip may be mounted on the package substrate. The first semiconductor chip may be mounted on the interposer chip. The first semiconductor chip may have a size smaller than that of the interposer chip. The thermal dissipation structure may be arranged on the interposer chip to surround the first semiconductor chip. The thermal dissipation structure may transfer heat in the first semiconductor chip to the interposer chip. The second semiconductor chip may be mounted on the first semiconductor chip. Thus, the heat in the first semiconductor chip may be effectively transferred to the interposer chip through the thermal dissipation line. | 04-24-2014 |
20140131851 | STRUCTURE FOR MICROELECTRONIC PACKAGING WITH TERMINALS ON DIELECTRIC MASS - A structure may include a spacer element overlying a first portion of a first surface of a substrate; first terminals at a second surface of the substrate opposite the first surface; and second terminals overlying a third surface of the spacer element facing away from the first surface. Traces extend from the second terminals along an edge surface of the spacer element that extends from the third surface towards the first surface, and may be electrically coupled between the second terminals and the first terminals or electrically conductive elements at the first surface. The spacer element may at least partially define a second portion of the first surface, which is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some of the conductive elements are at the second portion and may permit connection with such microelectronic element. | 05-15-2014 |
20140145323 | LAMINATION LAYER TYPE SEMICONDUCTOR PACKAGE - Disclosed herein is a lamination layer type semiconductor package, and more particularly, a lamination layer type semiconductor package capable of maintaining a thickness of a package on package structure at a minimum and minimizing a warpage defect by mounting two chips so as to correspond to each other. The lamination layer type semiconductor package includes: an upper package having an upper flip chip mounted on an upper substrate; a lower package having a lower flip chip mounted on a lower substrate and disposed so as to closely adhere the upper flip chip and the lower flip chip to each other; a heat dissipation adhesive member adhesively fixing the upper flip chip and the lower flip chip and dissipating heat generated from the upper flip chip and the lower flip chip; and a molding member molding between the upper substrate and the lower substrate. | 05-29-2014 |
20140167243 | SEMICONDUCTOR PACKAGES USING A CHIP CONSTRAINT MEANS - A semiconductor chip package using a chip constraint means is provided in the invention. The root cause for the warpage and stress of a semiconductor chip package under a temperature change is the CTE mismatch between the chip and substrate. The current inventive concept is to reduce the CTE mismatch by using a chip constraint means to constrain the thermal deformation of the chip. In one preferred embodiment, the chip constraint means comprises a chip constraint ring surrounding and bonding to the chip. In another preferred embodiment, the chip constraint means further comprises a chip constraint lid covering and bonding to the chip as well as bonding to the chip constraint ring. The overall CTE of the chip and the chip constraint means is to be relatively high when using a high CTE and high modulus of chip constraint means, reducing the warpage and stress of a flip chip package. | 06-19-2014 |
20140175632 | THREE-DIMENSIONAL INTEGRATED CIRCUIT - A three-dimensional integrated circuit, including a first adhesive bonding layer, a first chip, a second chip, and an inter-stratum thermal pad, is provided. The first adhesive bonding layer has a first surface and a second surface opposite to each other. The first chip is disposed on the first surface of the first adhesive bonding layer. The first chip includes a hot zone. The second chip is disposed on the second surface of the first adhesive bonding layer. The inter-stratum thermal pad is embedded in the first adhesive bonding layer and faces to the hot zone. | 06-26-2014 |
20140183718 | Semiconductor Device and Method of Using a Standardized Carrier to Form Embedded Wafer Level Chip Scale Packages - A semiconductor device includes a standardized carrier. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. The semiconductor wafer is singulated through a first portion of the base semiconductor material to separate the semiconductor die. The semiconductor die are disposed over the standardized carrier. A size of the standardized carrier is independent from a size of the semiconductor die. An encapsulant is deposited over the standardized carrier and around the semiconductor die. An interconnect structure is formed over the semiconductor die while leaving the encapsulant devoid of the interconnect structure. The semiconductor device is singulated through the encapsulant. Encapsulant remains disposed on a side of the semiconductor die. Alternatively, the semiconductor device is singulated through a second portion of the base semiconductor and through the encapsulant to remove the second portion of the base semiconductor and encapsulant from the side of the semiconductor die. | 07-03-2014 |
20140191385 | Process for Producing a Metal Device Housed in a Closed Housing within an Integrated Circuit, and Corresponding Integrated Circuit - An integrated circuit includes a number of metallization levels separated by an insulating region disposed over a substrate. A housing includes walls formed from metal portions produced in various metallization levels. A metal device is housed in the housing. An aperture is produced in at least one wall of the housing. An external mechanism outside of the housing is configured so as to form an obstacle to diffusion of a fluid out of the housing through the at least one aperture. At least one through-metallization passes through the external mechanism and penetrates into the housing through the aperture in order to make contact with at least one element of the metal device. | 07-10-2014 |
20140197530 | SEMICONDUCTOR DEVICE WITH CHIP HAVING LOW-K-LAYERS - A semiconductor device is described having at least one semiconductor chip, the chip having an active area on a top side thereof, the active area formed at least in part of low-k material, said low-k material defining a low-k subarea of said active area; an embedding material, in which said at least one semiconductor chip is embedded, at least part of the embedding material forming a coplanar area with said active area; at least one contact area within the low-k subarea; a redistribution layer on the coplanar area, the redistribution layer connected to said contact areas; at least one first-level interconnect, located outside said low-k subarea, the first-level interconnect electrically connected to at least one of said contact areas via the redistribution layer. | 07-17-2014 |
20140239477 | SEMICONDUCTOR PACKAGES AND METHODS OF FORMING THE SAME - A semiconductor package including a package substrate having a chip mounting region and a peripheral region and including a ground layer formed in the peripheral region, first solder balls on the package substrate in the chip mounting region, second solder balls on the ground layer, at least one semiconductor chip stacked on the package substrate in the chip mounting region, and a package cap covering the semiconductor chip and contacting the package substrate in the peripheral region may be provided. The package cap is electrically connected to the second solder balls. Methods of fabricating the semiconductor package are also provided. | 08-28-2014 |
20140246769 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device includes an insulating substrate having a semiconductor element mounted thereon; an outer case accommodating the insulating substrate; and a metallic terminal bar disposed above the insulating substrate and fixed to side walls of the outer case at both ends thereof. Each of both ends of the terminal bar at a position close to the side wall of the outer case at a surface on an opposite side to a surface facing the insulating substrate is provided with a pressed groove. | 09-04-2014 |
20140252585 | Packages for Semiconductor Devices, Packaged Semiconductor Devices, and Methods of Cooling Packaged Semiconductor Devices - Packages for semiconductor devices, packaged semiconductor devices, and methods of cooling packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes a substrate including a semiconductor device mounting region, a cover coupled to a perimeter of the substrate, and members disposed between the substrate and the cover. The package includes partitions, with each partition being disposed between two adjacent members. The package includes a fluid inlet port coupled to the cover, and a fluid outlet port coupled to one of the partitions. | 09-11-2014 |
20140284785 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed are a semiconductor device and a manufacturing method thereof, which can achieve miniaturization and improvement in the integration level by forming a substrate using a pattern layer implemented on a wafer in a semiconductor fabrication (FAB) process. In one exemplified embodiment, the manufacturing method of the semiconductor device includes preparing a first semiconductor die including a plurality of through electrodes and a plurality of first conductive pillars, mounting the first semiconductor die to connect the first conductive pillars to the pattern layer provided on a wafer, forming a first encapsulant to cover the pattern layer and the first semiconductor die, mounting a second semiconductor die to electrically connect second conductive pillars provided in the second semiconductor die to the plurality of through electrodes exposed to a second surface of the first semiconductor die, and removing the wafer from a first surface of the pattern layer. | 09-25-2014 |
20140367840 | MOLD CAP FOR SEMICONDUCTOR DEVICE - A semiconductor package has a substrate with a solder mask layer, and upper and lower surfaces. Conductive traces and electrical contacts are formed on the substrate, and vias are formed in the substrate to electrically connect the conductive traces and electrical contacts. A semiconductor die is attached on the upper surface of the substrate. A mold cap is formed on the upper surface of the substrate and covers the die and the conductive traces. The mold cap includes a mold body having clipped corners and extensions that extend from each of the clipped corners. The extensions and clipped corners help prevent package cracking. | 12-18-2014 |
20140367841 | SEMICONDUCTOR PACKAGE STRUCTURE AND SEMICONDUCTOR PROCESS - The present disclosure relates to a semiconductor package structure and semiconductor process. The semiconductor package includes a first substrate, a second substrate, a die, a plurality of interconnection elements and an encapsulation material. Each of the interconnection elements connects the first substrate and the second substrate. The encapsulation material encapsulates the interconnection elements. The encapsulation material defines a plurality of accommodation spaces to accommodate the interconnection elements, and the profile of each accommodation space is defined by the individual interconnection element, whereby the warpage behavior of the first substrate is in compliance with that of the second substrate during reflow. | 12-18-2014 |
20150035132 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device according to the present invention, as shown in FIG. | 02-05-2015 |
20150061102 | ELECTRONIC DEVICE PACKAGE AND FABRICATION METHOD THEREOF - An electronic device package and fabrication method thereof is provided. First, a semiconductor substrate is provided and the upper surface of it is etched to from recesses. A first isolation layer is formed on the upper surface and the sidewalls of the recesses. A conductive part is formed to fulfill the recesses and a conductive pad is formed on the first isolation layer to connect the conductive part. An electronic device is combined with the semiconductor substrate on the supper surface, wherein the electronic device has a connecting pad electrically connected to the conductive pad. The semiconductor substrate is thinned form its lower surface to expose the conductive part. A second isolation layer is formed below the lower surface and has an opening to expose the conductive part. A redistribution metal line is formed below the second isolation layer and in the opening to electrically connect to the conductive part. | 03-05-2015 |
20150137341 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - A chip package including a first substrate having a first surface and a second surface opposite thereto is provided. The first substrate has a micro-electric element and a plurality of conducting pads adjacent to the first surface. The first substrate has a plurality of openings respectively exposing a portion of each conducting pad. A second substrate is disposed on the first surface. An encapsulation layer is disposed on the first surface and covers the second substrate. A redistribution layer is disposed on the second surface and extends into the openings to electrically connect the conducting pads. | 05-21-2015 |
20150137342 | INDUCTOR/TRANSFORMER OUTSIDE OF SILICON WAFER - An integrated circuit package includes an integrated circuit and an interposer layer. The interposer layer is arranged above the integrated circuit and includes an inductor formed at least partially within the interposer layer. The inductor includes a first pair of conductive pillars including a first conductive pillar and a second conductive pillar formed within a first via and a second via, respectively. The first via and the second via are formed through the interposer layer. The inductor further includes a first conductive trace connected across first ends of the first conductive pillar and the second conductive pillar on a first surface of the interposer layer, and a first conductive interconnect structure connected between second ends of the first conductive pillar and the second conductive pillar and the integrated circuit. | 05-21-2015 |
20150145114 | Thermally Enhanced Package with Lid Heat Spreader - A method and apparatus are provided for manufacturing a lead frame based thermally enhanced package ( | 05-28-2015 |
20150325500 | ULTRA-THIN SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF - A small and ultra-thin power semiconductor device and a preparation method are disclosed. The device includes a chip mounting unit with a plurality of pads with a plate arranged on top surface of each pad; a semiconductor chip flipped and attached on the chip mounting unit, where the electrodes at the front of the chip are electrically connected to the pads; a plastic packaging body covering the chip mounting units and the chip, where the top surface of the plate and the back surface of the chip are exposed out from top surface of the plastic packaging body and the bottom surfaces of the pads are exposed out of the bottom surface of the plastic packaging body; a plurality of top metal segments arranged on the top surface of the plastic packaging body and electrically connected to the top surface of each plate and the back surface of the chip. | 11-12-2015 |
20150340303 | MULTI CHIP PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A multi chip package includes a protective layer having an upper surface that surrounds a first chip and a second chip, which are mounted over a first substrate, to expose an upper surface of the first chip and an upper surface of the second chip, a heat spreader disposed over the upper surfaces, and a thermal interface material disposed at an interface between the heat spreader and the upper surfaces. | 11-26-2015 |
20150357271 | SEMICONDUCTOR DEVICE - The semiconductor device in accordance with one mode comprises a semiconductor chip; a chip mounting substrate on which the semiconductor chip is mounted; a chip container that is provided on the chip mounting substrate and contains the semiconductor chip; and a seal part that seals the chip container containing the semiconductor chip and the chip mounting substrate. The chip container has a frame part surrounding a periphery of the semiconductor chip. The height of the frame part is greater than that of the semiconductor chip. The inside of the frame part in the chip container is provided with a chip coating material that protects the semiconductor chip. | 12-10-2015 |
20150357309 | Package Structure and Methods of Forming the Same - Embodiments relate to packages and methods of forming packages. A package includes a package substrate, a first device die, first electrical connectors, an encapsulant, a redistribution structure, and a second device die. The first device die is attached to a side of the package substrate, and the first electrical connectors are mechanically and electrically coupled to the side of the package substrate. The encapsulant at least laterally encapsulates the first electrical connectors and the first device die. The redistribution structure is on the encapsulant and the first electrical connectors. The redistribution structure is directly coupled to the first electrical connectors. The first device die is disposed between the redistribution structure and the package substrate. The second device die is attached to the redistribution structure by second electrical connectors, and the second electrical connectors are directly coupled to the redistribution structure. | 12-10-2015 |
20150364409 | ELECTRONIC DEVICE WITH DIE BEING SUNK IN SUBSTRATE - An electronic device includes a circuit integrated on a die having front and back surfaces with die terminals on the front surface. The die is embedded in a package including substrate of thermally conductive material with front and back surfaces and a through-hole. The die is sunk in the through-hole. A first insulating material layer covers the die front surface and the package front surface with first windows for accessing die terminals. Package terminals and package track are arranged on the first insulating layer. A second insulating material layer covers the first insulating layer and the package tracks with second windows for accessing the package terminals. | 12-17-2015 |
20160005684 | Electronic component and method for electrically coupling a semiconductor die to a contact pad - In an embodiment, an electronic component includes a dielectric core layer, one or semiconductor dies comprising a first major surface, a first electrode arranged on the first major surface and a second major surface that opposes the first major surface. One or more slots are arranged within the dielectric core layer adjacent the semiconductor die and a redistribution structure electrically couples the first electrode to a component contact pad arranged adjacent the second major surface of the semiconductor die. The semiconductor die is embedded in the dielectric core layer and a portion of the redistribution structure is arranged on side walls of the slot. | 01-07-2016 |
20160005715 | POWER MANAGEMENT INTEGRATED CIRCUIT (PMIC) INTEGRATION INTO A PROCESSOR PACKAGE - A hybrid package having a processor module disposed on a substrate and an auxiliary module disposed on a patterned lid. The auxiliary module may be a memory module, a power management integrated circuit (PMIC) module, and/or other suitable module, that are located in the package along with the processor module. Having the auxiliary module in the package with the processor module reduces the noise at the solder bump between the processor module and the substrate. Having the auxiliary module in the package with the processor module also allows other modules to be added to the package without increasing the area of the package. | 01-07-2016 |
20160020160 | DEVICES EMPLOYING SEMICONDUCTOR DIE HAVING HYDROPHOBIC COATINGS, AND RELATED COOLING METHODS - Devices employing semiconductor die having hydrophobic coatings, and related cooling methods are disclosed. A device may include at least one semiconductor die electrically coupled to a substrate by electrical contact elements. During operation the semiconductor die and the electrical contact elements generate heat. By applying hydrophobic coatings to the semiconductor die and the electrical contact elements, a cooling fluid may be used to directly cool the semiconductor die and the electrical contact elements to maintain these components within temperature limits and free from electrical shorting and corrosion. In this manner, the semiconductor die and associated electrical contact elements may be cooled to avoid the creation of damaging localized hot spots and temperature-sensitive semiconductor performance issues. | 01-21-2016 |
20160031707 | MICROELECTRONIC DEVICES AND METHODS FOR MANUFACTURING MICROELECTRONIC DEVICES - Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a method for manufacturing microelectronic devices includes forming a stand-off layer over a plurality of microelectronic dies on a microfeature workpiece, removing selected portions of the stand-off layer to form a plurality of stand-offs on corresponding dies, cutting the workpiece to singulate the dies, attaching a first singulated die to a support member, and coupling a second die to the stand-off on the first singulated die. | 02-04-2016 |
20160035646 | SEMICONDUCTOR DEVICE, METHOD FOR ASSEMBLING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE COMPONENT, AND UNIT MODULE - A semiconductor device includes an insulating substrate; a semiconductor element mounted on the insulating substrate; and a radiation block bonded to the semiconductor element. The radiation block includes a three-dimensional radiation portion and a base portion connected to the radiation portion. The radiation portion of the radiation block has a pin shape, a fin shape, or a porous shape. | 02-04-2016 |
20160046483 | METHODS FOR PACKAGING A MICROELECTROMECHANICAL SYSTEM (MEMS) WAFER AND APPLICATION-SPECIFIC INTEGRATED CIRCUIT (ASIC) DIES USING THROUGH MOLD VIAS (TMVS) - A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using through mold vias (TMVs) is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die is formed. A through mold via (TMV) electrically coupled with the integrated circuit die and extending between a top surface of the housing and the integrated circuit die is formed. The structure resulting from application of the method is also provided. | 02-18-2016 |
20160046484 | METHODS FOR PACKAGING A MICROELECTROMECHANICAL SYSTEM (MEMS) WAFER AND APPLICATION-SPECIFIC INTEGRATED CIRCUIT (ASIC) DIES USING WIRE BONDING - A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using wire bonds is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A conductive stud or external wire bond electrically coupled with the integrated circuit die and extending vertically up is formed. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die, and with a top surface approximately coplanar with a top surface of the conductive stud or external wire bond, is formed. The structure resulting from application of the method is also provided. | 02-18-2016 |
20160049353 | ASSEMBLY INCLUDING PLURAL THROUGH WAFER VIAS, METHOD OF COOLING THE ASSEMBLY AND METHOD OF FABRICATING THE ASSEMBLY - An assembly includes a chip including an integrated circuit, a casing including an integrated circuit including plural active elements and including an upper portion formed on a side of the chip, a lower portion formed on another side of the chip, and a cooling inlet and a cooling outlet for transferring a coolant, provided in an upper surface of the casing, and forming outer sidewalls of the upper portion and inner sidewalls of the lower portion, plural through-wafer vias (TWVs) for electrically connecting the integrated circuit of the chip and the integrated circuit of the casing, and a card connected to the casing for electrically connecting the casing to a system board. | 02-18-2016 |
20160049360 | ASSEMBLY INCLUDING PLURAL THROUGH WAFER VIAS, METHOD OF COOLING THE ASSEMBLY AND METHOD OF FABRICATING THE ASSEMBLY - An assembly includes a chip including an integrated circuit, a casing including an integrated circuit and including an upper portion formed on a side of the chip, a lower portion formed on another side of the chip, and a cooling inlet and a cooling outlet for transferring a coolant, provided in an upper surface of the casing, and forming outer sidewalls of the upper portion and inner sidewalls of the lower portion, plural through-wafer vias (TWVs) for electrically connecting the integrated circuit of the chip and the integrated circuit of the casing, and a card connected to the casing for electrically connecting the casing to a system board. The card includes an upper card connected to the upper portion of the casing, and a lower card connected to the lower portion of the casing. | 02-18-2016 |
20160056088 | Cold Plate, Device Comprising a Cold Plate and Method for Fabricating a Cold Plate - A cold plate includes a single piece member and a channel. A top side of the channel is open. A bottom side of the channel opposite the top side has an inlet and an outlet. | 02-25-2016 |
20160056124 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. | 02-25-2016 |
20160079138 | ELECTRONIC STRUCTURES STRENGTHENED BY POROUS AND NON-POROUS LAYERS, AND METHODS OF FABRICATION - Integrated circuits (ICs | 03-17-2016 |
20160086895 | Method for Manufacturing Semiconductor Device and Semiconductor Device - A method for manufacturing a semiconductor device includes: a fixing step in which semiconductor chips are mounted on and fixed to predetermined positions on an upper surface of a single starting substrate to form individual substrates; a connection step in which electrodes of the semiconductor chips and of the starting substrate are connected by wires; a sealing step in which on the upper surface of the starting substrate, the resin is potted among the semiconductor chips to seal an entire lateral circumference of each of the semiconductor chip; a bonding step in which a single starting protective cover to form individual protective covers is bonded to a surface of the resin so as to extend the semiconductor chips; and a cutting step in which an assembly of the semiconductor devices formed by bonding the starting protective cover to the starting substrate via the resin is cut to the semiconductor devices. | 03-24-2016 |
20160086922 | STACKABLE MOLDED MICROELECTRONIC PACKAGES WITH AREA ARRAY UNIT CONNECTORS - A microelectronic package having a substrate, a microelectronic element, e.g., a chip, and terminals can have conductive elements electrically connected with element contacts of the chip and contacts of the substrate. Conductive elements can be electrically insulated from one another for simultaneously carrying different electric potentials. An encapsulant can overlie the first surface of the substrate and at least a portion of a face of the microelectronic element remote from the substrate, and may have a major surface above the microelectronic element. A plurality of package contacts can overlie a face of the microelectronic element remote from the substrate. The package contacts, e.g., conductive masses, substantially rigid posts, can be electrically interconnected with terminals of the substrate, such as through the conductive elements. The package contacts can have top surfaces at least partially exposed at the major surface of the encapsulant. | 03-24-2016 |
20160099214 | FLEXIBLE ELECTRONIC CIRCUITS WITH EMBEDDED INTEGRATED CIRCUIT DIE AND METHODS OF MAKING AND USING THE SAME - Flexible integrated circuit (IC) modules, flexible IC devices, and methods of making and using flexible IC modules are presented herein. A flexible integrated circuit module is disclosed which includes a flexible substrate and a semiconductor die attached to the flexible substrate. An encapsulating layer, which is attached to the flexible substrate, includes a thermoplastic resin and/or a polyimide adhesive encasing therein the semiconductor die. The encapsulating layer may be an acrylic-based thermally conductive and electrically isolating polyimide adhesive. Optionally, the encapsulating layer may be a B-stage FR-4 glass-reinforced epoxy thermoplastic polymer or copolymer or blend. The die may be embedded between two flexible substrates, each of which includes a layer of flexible polymer, such as a polyimide sheet, with two layers of conductive material, such as copper cladding, disposed on opposing sides of the layer of flexible polymer. | 04-07-2016 |
20160133538 | Packaged Semiconductor Devices and Methods of Packaging Semiconductor Devices - Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die. | 05-12-2016 |
20160133558 | Power Module - A power module, having a printed circuit board core, which contains at least one electronic power component embedded in an insulating layer, the core being arranged between two heat dissipation plates wherein each heat dissipation plate has a metal outer layer and a metal inner layer electrically separated from said metal outer layer by a thermally conductive, electrically insulating intermediate layer, and electrode terminals of the at least one power component are guided out from the core via terminal lines, wherein the printed circuit board core on both sides of the insulating layer has a conductor layer, at least one conductor layer is structured at least in portions, and each conductor layer is connected at least in portions via a conductive, metal intermediate layer to a metal inner layer of the heat dissipation plate, contacts run from the structured conductor layer to the electrode terminals of the at least one power component, and at least one power terminal of the at least one power component is connected via a contact, a portion of a structured conductor layer, and the conductive, metal intermediate layer to at least one portion of the metal inner layer of the heat dissipation plate, which forms part of the terminal line to the electrode terminal. | 05-12-2016 |
20160133604 | SEMICONDUCTOR PACKAGE - A semiconductor package includes: an upper package to which an element is mounted, and which includes a metal pad portion; a metal post connected to the metal pad portion; and a lower package to which an element is mounted, and which is connected to the metal post. | 05-12-2016 |
20160148864 | INTEGRATED DEVICE PACKAGE COMPRISING HETEROGENEOUS SOLDER JOINT STRUCTURE - Some features pertain to an integrated circuit device that includes a first package substrate, a first die coupled to the first package substrate, a second package substrate, and a solder joint structure coupled to the first package substrate and the second package substrate. The solder joint structure includes a solder comprising a first melting point temperature, and a conductive material comprising a second melting point temperature that is less than the first melting point temperature. In some implementations, the conductive material is one of at least a homogeneous material and/or a heterogeneous material. In some implementations, the conductive material includes a first electrically conductive material and a second material. The conductive material is an electrically conductive material. | 05-26-2016 |
20160163616 | Heat Spreader, Electronic Module Comprising a Heat Spreader and Method of Fabrication Thereof - An electronic module includes a semiconductor package, a heat spreader attached to the semiconductor package and an electrically insulating layer disposed on the heat spreader remote from the semiconductor package. | 06-09-2016 |
20160172334 | STRUCTURE AND FORMATION METHOD OF CHIP PACKAGE STRUCTURE | 06-16-2016 |
20160172337 | SEMICONDUCTOR PACKAGE DEVICES INCLUDING INTERPOSER OPENINGS FOR HEAT TRANSFER MEMBER | 06-16-2016 |
20160190034 | POWER CONVERSION DEVICE - A power conversion device includes a heat releasing heatsink, a printed circuit board provided on the heatsink and having a through hole and wires, a metal case having a depressed portion fitted in the through hole and mounted on a top of the heatsink, and a heat releasable insulating layer made of a ceramic material and disposed between a bottom of the depressed portion and a top portion of the heat sink. A power semiconductor element is mounted in the depressed portion and electrically connected to the wires of the printed circuit board. | 06-30-2016 |
20160190054 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH INTERPOSER SUPPORT STRUCTURE MECHANISM AND METHOD OF MANUFACTURE THEREOF - A system and method of manufacture of an integrated circuit packaging system includes: a base substrate, the base substrate includes a base terminal; an integrated circuit device on the base substrate; a bottom conductive joint on the base terminal; a conductive ball on the bottom conductive joint, the conductive ball includes a core body; and an interposer over the conductive ball. | 06-30-2016 |
20160190056 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH PACKAGE-ON-PACKAGE MECHANISM AND METHOD OF MANUFACTURE THEREOF - An integrated circuit packaging system, and a method of manufacture thereof, including: a substrate; a metal core interconnect attached to the substrate; an upper connection joint attached above and to the metal core interconnect; and an interposer attached to the upper connection joint. | 06-30-2016 |
20160190057 | INTERCONNECT STRUCTURE FOR MOLDED IC PACKAGES - Various examples are provided for interconnection structures for molded IC packages. In one example, among others, an IC package includes a substrate and an interposer. A plurality of conductive elements provide physical and electrical contact between a surface of the substrate and a surface of the interposer. A standoff element disposed between the surfaces of the substrate and interposer provides a minimum spacing between the surfaces of the substrate and interposer. In some implementations, a standoff element is disposed between an IC die disposed on the surface of the substrate and the surface of the interposer. In another example, a method includes coupling conductive elements to a surface of an interposer, attaching a standoff element, coupling the conductive elements to a surface of a substrate, and forming an embedded layer between the interposer and substrate. The standoff element defines a minimum gap between the interposer and the substrate. | 06-30-2016 |
20160190108 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - Disclosed herein is a semiconductor package in which a semiconductor chip and a mounting device are packaged together. The semiconductor package includes a semiconductor chip, a mounting block on which a first mounting device is mounted on a substrate that includes a circuit formed thereon, and an interconnection part configured to electrically connect the semiconductor chip to the mounting block. | 06-30-2016 |
20160197060 | PACKAGE WITH MULTIPLE PLANE I/O STRUCTURE | 07-07-2016 |
20160254249 | 3D Semiconductor Package Interposer with Die Cavity | 09-01-2016 |
20170236762 | SEMICONDUCTOR DEVICE | 08-17-2017 |
20170236797 | Ball Height Control in Bonding Process | 08-17-2017 |
20180022602 | SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF | 01-25-2018 |
20180026008 | 3D Semiconductor Package Interposer with Die Cavity | 01-25-2018 |
20190148282 | ELECTRONIC DEVICE WITH DIE BEING SUNK IN SUBSTRATE | 05-16-2019 |