Entries |
Document | Title | Date |
20080203515 | Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device - A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted. | 08-28-2008 |
20080211050 | Image sensor with inter-pixel isolation - An image sensor with a plurality of photodiodes that each have a first region constructed from a first type of material and a second region constructed from a second type of material. The photodiodes also have an insulating region between the first and second regions. The photodiodes are arranged in an array. In corner regions of the array, the second regions are offset relative to the insulating regions to capture more photons of incoming light. | 09-04-2008 |
20080211051 | Component with a Semiconductor Junction and Method for the Production Thereof - A component comprising a semiconductor junction (HU) is proposed which is formed from crystalline doped semiconductor layers. A semiconductor circuit (IC) is formed on the surface of the component, and a diode is formed internally and directly below the circuit. Integrated circuit and diode are connected to one another and formed and integrated diode component, in particular a photodiode array. | 09-04-2008 |
20080217716 | Imaging apparatus, method, and system having reduced dark current - An imaging method, apparatus, and system having an image sensor having a p-type substrate to getter metallics and other contaminants, an n-type epitaxial layer arranged on the p-type substrate to reduce dark current, cross-talk, and blooming, and a p-type epitaxial layer arranged on the n-type epitaxial layer. | 09-11-2008 |
20080217717 | CTE MATCHED MULTIPLEXOR - The invention consists of a wafer-level expansion-matched design which forces a substrate to expand and contract at the same rate as a surface-mounted component, which reduces mechanical stress on the component. An embodiment of an expansion-matched MUX design consists of two pieces of silicon sandwiching a shim, which has a higher CTE than the silicon. By modifying the silicon thickness, shim thickness, and shim material, the CTE of the composite structure may be tailored. | 09-11-2008 |
20080272454 | Light-Collecting Device, Solid-State Imaging Apparatus and Method of Manufacturing Thereof - It is realized a high sensitive solid-state imaging apparatus which corresponds to an optical system having a short focal length (an optical system having a large incident angle θ). | 11-06-2008 |
20080277754 | IMAGE SENSOR AND FABRICATION METHOD THEREOF - A method of fabricating an image sensor contains providing a semiconductor substrate with a plurality of pixels defined thereon, forming pixel electrodes on the pixels, and forming a barrier device filled between adjacent pixel electrodes, wherein the barrier device contains a high-k material. Then, a photoconductive layer and a transparent conductive layer are successively formed on the high-k material layer and the pixel electrodes. | 11-13-2008 |
20080283954 | Image sensor and method for manufacturing the same - Provided are an image sensor and a method for manufacturing the same. The image sensor includes a substrate, a first electrode, an intrinsic layer, a second conductive type conduction layer, and a second electrode. Circuitry including a lower interconnection is disposed on the substrate. The first electrode, the intrinsic layer, and the second conductive type conduction layer are sequentially stacked on the substrate. The second electrode is disposed on the second conductive type conduction layer and includes a non-explosive transparent electrode. | 11-20-2008 |
20090045479 | Image sensor with vertical drain structures - An image sensor includes an array of photo-detectors, a plurality of conductive line regions, and a conductive junction region. The array of photo-detectors is formed in a semiconductor substrate. Each conductive line region is formed under a respective line of photo-detectors along a first direction in the substrate. The conductive junction region is formed between the array of photo-detectors and the plurality of conductive line regions in the substrate. The conductive line regions and the conductive junction region form vertical drain structures for the photo-detectors. | 02-19-2009 |
20090057803 | SOLID-STATE IMAGING DEVICE, CAMERA AND METHOD OF PRODUCING THE SOLID-STATE IMAGE DEVICE - A solid-state imaging device in which a first conductive type epitaxial layer is formed on its first surface with an interconnection layer and light is received at a second surface of said epitaxial layer, the solid-state imaging device including: (a) a second conductive type region formed in said epitaxial layer with a first impurity concentration and storing a charge generated by a photoelectrical conversion, and (b) a first conductive type impurity layer formed closer to said second surface side of said epitaxial layer than said second conductive type region and having a second impurity concentration higher than the first impurity concentration; wherein the second impurity concentration has a concentration gradient increasing toward the second surface side. | 03-05-2009 |
20090085141 | PIXEL MATRIX WITH COMPENSATION OF OHMIC DROPS ON THE POWER SUPPLIES - A matrix microelectronic device comprising:
| 04-02-2009 |
20090085142 | SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING SAME - A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer. | 04-02-2009 |
20090102006 | ELECTROSTATIC MICRO ACTUATOR, ELECTROSTATIC MICROACTUATOR APPARATUS AND DRIVING METHOD OF ELECTROSTATIC MICRO ACTUATOR - A semiconductor substrate; a cantilever which is formed on the semiconductor substrate so as to face the semiconductor substrate with an air layer therebetween, the cantilever being made from an electrically conductive material or a semiconductor material, and the cantilever being mechanically movable; a photodiode which is formed so as to be connected in parallel to a capacitance that is constituted from the cantilever and the semiconductor substrate, and the photodiode being formed between an anchor portion which is a portion of the cantilever and the semiconductor substrate; and a power source which supplies voltage via a resistance on a side of the cantilever which is a connection point of a parallel circuit including both the capacitance and the photodiode so as to be backward bias to the photodiode, are included. | 04-23-2009 |
20090121308 | IMAGE SENSING DEVICE AND METHOD OF - A two-dimensional, temporally modulated electromagnetic wavefield, preferably in the ultraviolet, visible or infrared spectral range, can be locally detected and demodulated with one or more sensing elements. Each sensing element consists of a resistive, transparent electrode (E) on top of an insulated layer (O) that is produced over a semiconducting substrate whose surface is electrically kept in depletion. The electrode (E) is connected with two or more contacts (C | 05-14-2009 |
20090160005 | Image Sensor and Method for Manufacturing the Same - An image sensor includes circuitry, a metal interconnection, a first substrate, a metal ion-implanted insulating layer, and a photodiode. The circuitry is formed on and/or over the first substrate, and the metal ion-implanted insulating layer is formed on and/or over the metal interconnection. The photodiode is formed in a crystalline semiconductor layer over the metal ion-implanted insulating layer. | 06-25-2009 |
20090212384 | METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP ELEMENT, AND SOLID-STATE IMAGE PICKUP ELEMENT - Disclosed herein is a method of manufacturing a solid-state image pickup element, the method including the steps of forming a plurality of photoelectric conversion elements within a semiconductor substrate; forming a wiring layer via an insulating film on a surface of the semiconductor substrate in which surface the plurality of photoelectric conversion elements are formed; laminating a supporting substrate to a surface of the semiconductor substrate in which surface the wiring layer is formed via an adhesive; applying a pressure to the semiconductor substrate and the supporting substrate in a state of the semiconductor substrate and the supporting substrate being laminated to each other via the adhesive; and curing the adhesive by heating the adhesive to a curing temperature of the adhesive after releasing the applied pressure. | 08-27-2009 |
20090212385 | SEMICONDUCTOR DEVICE INCLUDING VANADIUM OXIDE SENSOR ELEMENT WITH RESTRICTED CURRENT DENSITY - In a semiconductor device including a semiconductor substrate and at least one sensor element made of vanadium oxide formed over the semiconductor substrate, the sensor element is designed so that a density of a current flowing through the sensor element is between 0 and 100 μA/μm2. | 08-27-2009 |
20090243020 | Producing Layered Structures With Layers That Transport Charge Carriers - Layered structures such as photosensing arrays include layers in which charge carriers can be transported. For example, a carrier-transporting substructure that includes a solution processing artifact can transport charge carriers that flow to or from it through charge-flow surface parts that are on electrically conductive regions of a circuitry substructure; the circuitry substructure can also have channel surface parts that are on semiconductive channel regions, with a set of the channel regions operating as acceptable switches in an application. Or a first substructure's surface can have carrier-active surface parts on electrode regions and line surface parts on line regions; a second substructure can include a transport layer on carrier-active surface parts and, over it, an electrically conductive layer; to prevent leakage, an open region can be defined in the electrically conductive layer over the line surface part and/or an electrically insulating layer portion can cover the line surface part. | 10-01-2009 |
20090250780 | HIGH FILL-FACTOR LASER-TREATED SEMICONDUCTOR DEVICE ON BULK MATERIAL WITH SINGLE SIDE CONTACT SCHEME - The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side and an architecture that enables the laser step to be the final step or a late step in the fabrication process. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor. | 10-08-2009 |
20090261443 | SHARED-PIXEL-TYPE IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A shared-pixel-type image sensor including a shared floating diffusion region formed in a semiconductor substrate; first and second adjacent photoelectric conversion regions sharing the floating diffusion region; two transmission elements that alternately transfer electric charges accumulated in the first and second photoelectric conversion regions to the shared floating diffusion region, respectively; a drive element for outputting the electric charges of the shared floating diffusion region; a first contact formed on the floating diffusion region; a second contact formed on the drive element; and a local wire that connects the first and second contacts to electrically connect the floating diffusion region and the drive element, wherein the local wire is formed at a level lower than respective top surfaces of the first and second contacts. | 10-22-2009 |
20090273050 | Photoelectric Conversion Device and Method of Producing the Same, and Method of Producing Line Image Sensor IC - A plurality of line image sensor ICs | 11-05-2009 |
20100013041 | MICROELECTRONIC IMAGER PACKAGES WITH COVERS HAVING NON-PLANAR SURFACE FEATURES - Several embodiments of microelectronic imager packages with covers having non-planar surface features are disclosed herein. One embodiment is directed to a imager package that includes an imager die having a plurality of photo sensors and an enclosure substantially enclosing the imager die. The enclosure has a cover attached to a base with an adhesive. The cover has a transparent central portion superimposed with the photo sensors and a peripheral portion around the central portion. The cover has a non-planar portion in the peripheral portion, and the non-planar portion is configured to increase a bonding strength between the cover and the base. | 01-21-2010 |
20100032785 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from a rear-surface side. The thickness of the silicon layer 4 is 10 μm or less. | 02-11-2010 |
20100065938 | ION IMPLANTATION METHOD, METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - An ion implantation method includes performing ion implantation a plurality of times using a plurality of ion implantation masks each including main mask portions, bridge portions connecting between the main mask portions, and openings corresponding to parts of annular regions where ions are to be implanted, whereby a plurality of annular ion-implanted regions are formed by combining the plurality of ion implantation masks. | 03-18-2010 |
20100078749 | DISTANCE IMAGE SENSOR - In a range image sensor | 04-01-2010 |
20100078750 | IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor includes readout circuit arranged over a semiconductor substrate, an interlayer dielectric film covering the readout circuit and including metal lines, a buffer layer arranged over the interlayer dielectric film, a crystallized silicon layer arranged over the buffer layer, an ion-implantation layer to partition photodiode regions corresponding to unit pixels in the crystallized silicon layer, and a metal plug arranged in a via-hole of the buffer layer, to electrically connect the photodiode region to the metal lines. In accordance with the method, a channel, enabling smooth transfer of photocharges, is provided between the photodiode and the readout circuit, to minimize dark current sources and prevent a deterioration in saturation and sensitivity and thereby improve image properties. | 04-01-2010 |
20100109115 | Virtual IC wafers and bonding of constitutent IC films - Integrated circuits are made by bonding to a substrate one or more slices of material, and forming circuits using the slices of material. | 05-06-2010 |
20100117183 | PHOTODETECTOR WITH INTERNAL GAIN AND DETECTOR COMPRISING AN ARRAY OF SUCH PHOTODETECTORS - A photodetector with internal gain comprising a semiconductor structure in which impact ionization events are produced mostly by minority charge carriers; a first biasing contact and a second biasing contact located in the semiconductor structure; a means of defining, in the semiconductor structure, a photon collection region close to first biasing contact; a P-N type junction formed in the semiconductor structure between the two biasing contacts and close to the second biasing contact; and a collector contact which is located in the P-N junction and used to collect current in the P-N junction. | 05-13-2010 |
20100133638 | Image sensors and methods of manufacturing the same - An image sensor includes a plurality of photodiodes, a plurality of wells isolating the plurality of photodiodes from each other, and a plurality of conductive layers or conductive lines for suppressing a dark current generated at the surface of the photodiodes and in the wells in response to a bias voltage. | 06-03-2010 |
20100164043 | METHOD FOR FABRICATING CMOS IMAGE SENSOR - A method of forming a CMOS image sensor and a CMOS image sensor. A method of forming a CMOS image sensor may include forming a plurality of photodiodes on and/or over a semiconductor substrate at regular intervals, forming an interlayer insulating film on and/or over an entire surface of a semiconductor substrate including photodiodes, coating an organic compound on and/or over an entire surface of an interlayer insulating film, coating photoresist on and/or over an organic compound, subjecting a photoresist to exposure and/or development to form a photoresist pattern which may expose an interlayer insulating film opposite to a photodiode region, selectively etching a portion of an exposed interlayer insulating film using a photoresist pattern as a mask, and/or removing a photoresist pattern. | 07-01-2010 |
20100164044 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor includes first to fourth image sensing sections symmetrically aligned in a form of a 2×2 matrix, first to fourth pixel arrays aligned in the first to fourth image sensing sections, respectively, in adjacent to each other, and first to fourth peripheral circuit parts aligned at peripheral portions of the first to fourth image sensing sections. A middle-size CMOS image sensor is provided that is suitable for the available field size of conventional photo equipment, so the manufacturing cost may be minimized and price competitiveness may be maximized while providing high-quality images with high pixel resolution. | 07-01-2010 |
20100164045 | IMAGER METHOD AND APPARATUS EMPLOYING PHOTONIC CRYSTALS - An image sensor and a method of forming an image sensor. The image sensor includes an array of pixel cells at a surface of a substrate. Each pixel cell has a photo-conversion device. At least one a micro-electro-mechanical system (MEMS) element including a photonic crystal structure is provided over at least one of the pixel cells. The MEMS-based photonic crystal element is supported by a support structure and configured to selectively permit electromagnetic wavelengths to reach the photo-conversion device upon application of a voltage. As such, the MEMS-based photonic crystal element of the invention can replace or compliment conventional filters, e.g., color filter arrays. | 07-01-2010 |
20100207229 | NON-PLANAR MICROCIRCUIT STRUCTURE AND METHOD OF FABRICATING SAME - A foldable microcircuit is initially a planar semiconductor wafer on which circuitry has been formed. The wafer is segmented into a plurality of tiles, and a plurality of hinge mechanisms are coupled between adjacent pairs of tiles such that the segmented wafer can be folded into a desired non-planar configuration having a high fill-factor and small gaps between tiles. The hinge mechanisms can comprise an organic material deposited on the wafer such that it provides mechanical coupling between adjacent tiles, with metal interconnections between tiles formed directly over the organic hinges, or routed between adjacent tiles via compliant bridges. Alternatively, the interconnection traces between tiles can serve as part or all of a hinge mechanism. The foldable microcircuit can be, for example, a CMOS circuit, with the segmented tiles folded to form, for example, a semi-spherical structure arranged to provide a wide FOV photodetector array. | 08-19-2010 |
20100237454 | LIGHT-RECEIVING DEVICE AND METHOD FOR MANUFACTURING LIGHT-RECEIVING DEVICE - A light-receiving device includes a light-receiving part | 09-23-2010 |
20100258894 | PHOTODIODE ARRAY AND IMAGE PICKUP DEVICE USING THE SAME - A photodiode array with reduced optical crosstalk and an image pickup device using it are provided. The photodiode array | 10-14-2010 |
20100276776 | Germanium Film Optical Device Fabricated on a Glass Substrate - A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes. | 11-04-2010 |
20100289102 | METHOD OF MAKING DEEP JUNCTION FOR ELECTRICAL CROSSTALK REDUCTION OF AN IMAGE SENSOR - The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements. | 11-18-2010 |
20100295144 | Tiled Light Sensing Array - A method is provided of forming a light sensing arrangement for use in a light sensor. The method comprises tiling a plurality of individual light sensing elements on a carrier, each element having a notch formed in an edge thereof, the notch being adapted to provide space, when the elements are tiled together, for an electrical connection to be made between the carrier and a surface of the element arranged to faced away from the carrier. Each element may comprise Silicon Photomultiplier (SPM) circuitry. | 11-25-2010 |
20100301443 | IMAGING ARRAY WITH DUAL HEIGHT SEMICONDUCTOR AND METHOD OF MAKING SAME - A method of fabricating an imaging array includes providing a single crystal silicon substrate and bonding the single crystal silicon substrate to an insulating substrate. One or more portions of an exposed surface of the single-crystal silicon substrate are removed to form a pattern of first areas having a first height measured from the insulating substrate and second areas having a second height measured from the insulating substrate. Photosensitive elements are formed on the first areas and readout elements are formed on the second areas. The single-crystal silicon substrate is treated by hydrogen implantation to form an internal separation boundary and a portion of the single-crystal silicon substrate is removed at the internal separation boundary to form the exposed surface. | 12-02-2010 |
20100301444 | SEMICONDUCTOR IMAGING DEVICE WITH WHICH SEMICONDUCTOR ELEMENTS OF PIXEL AREA AND OTHER AREAS HAS SAME CHARACTERISTICS - Photoelectric conversion elements are arranged in a pixel area. A circuit area is arranged around the pixel area. An interconnect including copper is arranged in the pixel area and circuit area. A cap layer is arranged on the interconnect. Wherein the cap layer except a part on the interconnect is removed from the pixel area and circuit area. | 12-02-2010 |
20100308429 | FLEXIBLE LATERAL PIN DIODES AND THREE-DIMENSIONAL ARRAYS AND IMAGING DEVICES MADE THEREFROM - Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device. | 12-09-2010 |
20100314705 | SEMICONDUCTOR DEVICE MODULE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE MODULE, SEMICONDUCTOR DEVICE MODULE MANUFACTURING DEVICE - A semiconductor device module is provided, including a number of n semiconductor devices formed on a substraten being an integer≧2; each semiconductor device having a stack of a first contact layer region, a semiconductor layer region, and a second contact layer region wherein the first contact layer region of each (n−1)th semiconductor device is connected to the second contact layer region of the nth semiconductor device by an interconnection; and wherein, of the first and second contact layer regions, at least the first contact layer region of at least one of the semiconductor devices has a varying thickness, the thickness being maximum at the interconnection. | 12-16-2010 |
20100320556 | CONTINUOUS LARGE AREA IMAGING AND DISPLAY ARRAYS USING READOUT ARRAYS FABRICATED IN SILICON-ON-GLASS SUBSTRATES - A vertically-integrated image sensor is proposed with the performance characteristics of single crystal silicon but with the area coverage and cost of arrays fabricated on glass. The image sensor can include a backplane array having readout elements implemented in silicon-on-glass, a frontplane array of photosensitive elements vertically integrated above the backplane, and an interconnect layer disposed between the backplane array and the image sensing array. Since large area silicon-on-glass backplanes are formed by tiling thin single-crystal silicon layers cleaved from a thick silicon wafer side-by-side on large area glass gaps between the tiled silicon backplane would normally result in gaps in the image captured by the array. Therefore, embodiments further propose that the pixel pitch in both horizontal and vertical directions of the frontplane be larger than the pixel pitch of the backplane, with the pixel pitch difference being sufficient that the frontplane bridges the gap between backplane tiles. | 12-23-2010 |
20110018088 | COMPOSITION AND PHOTO-ELECTRIC CONVERTING ELEMENT OBTAINED USING THE SAME - A composition which comprises a conjugated polymer, a fullerene derivative, a first solvent, and a second solvent. When the sum of the weight of the first solvent and the weight of the second solvent is taken as 100, the weight of the first solvent is 70-97. The first solvent at 25° C. has a surface tension exceeding 25 mN/m, and the second solvent at 25° C. has a surface tension of 15-25 mN/m. | 01-27-2011 |
20110031577 | Photodiode Array - A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer | 02-10-2011 |
20110042772 | Composite Semiconductor Structure Formed Using Atomic Bonding and Adapted to Alter the Rate of Thermal Expansion of a Substrate - In certain embodiments, a method includes forming a composite semiconductor structure for altering a rate of thermal expansion of a first substrate. The composite semiconductor structure is formed by atomically bonding a first surface of a thermal matching substrate to a first surface of the first substrate, and atomically bonding a second surface of the thermal matching substrate to a first surface of a balancing substrate. The thermal matching substrate is adapted to alter the rate of thermal expansion of the first substrate and the balancing substrate is adapted to substantially prevent warping of the composite semiconductor structure. | 02-24-2011 |
20110042773 | HIGH FILL-FACTOR LASER-TREATED SEMICONDUCTOR DEVICE ON BULK MATERIAL WITH SINGLE SIDE CONTACT SCHEME - The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor. | 02-24-2011 |
20110057282 | PIXEL SENSORS OF MULTIPLE PIXEL SIZE AND METHODS OF IMPLANT DOSE CONTROL - CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in a same substrate and forming a masking pattern over at least one of the plurality of pixel sensors that has a pixel size larger than a non-masked pixel sensor of the plurality of pixel sensors. The method further includes providing a single dosage implant to the plurality of pixel sensors. The at least one of the plurality of pixel sensors with the masking pattern receives a lower dosage than the non-masked pixel sensor. | 03-10-2011 |
20110068429 | IMAGE SENSOR WITH CONTACT DUMMY PIXELS - An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are disposed within the epitaxial layer and each include a photosensitive element for collecting an image signal. The contact dummy pixel is dispose within the epitaxial layer and includes an electrical conducting path through the epitaxial layer. The electrical conducting path couples to the metal layer above the epitaxial layer. | 03-24-2011 |
20110079869 | MULTIPLEXED OUTPUT TWO TERMINAL PHOTODIODE ARRAY FOR IMAGING APPLICATIONS AND RELATED FABRICATION PROCESS - A detector array for an imaging system may exploit the different sensitivities of array pixels to an incident flux of low energy photons with a wavelength falling near the high end of the range of sensitivity of the semiconductor. The detector array may provide the de-multiplexable spatial information. The detector array may include a two-terminal multi-pixel array of Schottky photodiodes electrically connected in parallel. | 04-07-2011 |
20110089516 | RECTIFIER - Provided is a rectifier such as a detector in which a cutoff frequency may be increased in a view point different from the reduction in size of the structure. The rectifier includes: a Schottky barrier portion including a Schottky electrode; a barrier portion having a rectifying property with respect to a majority carrier in the Schottky barrier portion; and an ohmic electrode in electrical contact with the barrier portion having the rectifying property, in which each of the Schottky barrier portion and the barrier portion having the rectifying property has an asymmetrical band profile whose gradient on one side is larger than a gradient of another side, and the Schottky barrier portion and the barrier portion having the rectifying property are connected to each other so that the steep gradient side of the band profile is located on a side of the Schottky electrode. | 04-21-2011 |
20110147875 | IMAGE SENSOR WITH WELL BOUNCE CORRECTION - An image sensor includes a pixel array having photoactive pixels and dark reference pixels. The photoactive pixels can be configured in a sub-array within the pixel array. Well contacts are only placed along opposing sides or edges of the sub-array of photoactive pixels or along opposing sides or edges of the pixel array. | 06-23-2011 |
20110147876 | SOLID-STATE IMAGING DEVICE, ELECTRONIC MODULE AND ELECTRONIC APPARATUS - A solid-state imaging device including an imaging area formed of a plurality of pixels arrayed in a two-dimensional matrix is provided. The solid-state imaging device includes: a photoelectric conversion portion including a charge accumulation region provided on a semiconductor substrate; a read transistor for reading electric charges from the photoelectric conversion portion; and a gettering site for separating metal impurities within the semiconductor substrate from at least the photoelectric conversion portion. The photoelectric conversion portion is provided on the surface side of the semiconductor substrate, and the gettering site is provided on the rear side away from the semiconductor substrate. | 06-23-2011 |
20110156195 | Interwafer interconnects for stacked CMOS image sensors - An image sensor includes a sensor wafer and a circuit wafer electrically connected to the sensor wafer. The sensor wafer includes unit cells with each unit cell having at least one photodetector and a charge-to-voltage conversion region. The circuit wafer includes unit cells with each unit cell having an electrical node that is associated with each unit cell on the sensor wafer. An inter-wafer interconnect is connected between each charge-to-voltage conversion region on the sensor wafer and a respective electrical node on the circuit wafer. A location of a portion of the unit cells on the sensor wafer and a location of a corresponding portion of the unit cells on the circuit wafer are shifted a predetermined distance with respect to the locations of the remaining unit cells on the sensor and circuit wafers. | 06-30-2011 |
20110156196 | IMAGE PICKUP DEVICE AND CAMERA - An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged. | 06-30-2011 |
20110163404 | Germanium Film Optical Device - A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes. | 07-07-2011 |
20110175188 | Wavelength Sensitive Sensor Photodiodes - The present invention is directed toward a dual junction photodiode semiconductor devices with improved wavelength sensitivity. The photodiode employs a high quality n-type layer with relatively lower doping concentration and enables high minority carrier lifetime and high quantum efficiency with improved responsivity at multiple wavelengths. In one embodiment, the photodiode comprises a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type formed epitaxially in the semiconductor substrate, a second impurity region of the first conductivity type shallowly formed in the epitaxially formed first impurity region, a first PN junction formed between the epitaxially formed first impurity region and the second impurity region, a second PN junction formed between the semiconductor substrate and the epitaxially formed first impurity region, and at least one passivated V-groove etched into the epitaxially formed first impurity region and the semiconductor substrate. | 07-21-2011 |
20110175189 | SOLID-STATE IMAGE SENSOR MANUFACTURING METHOD AND A SOLID-STATE IMAGE SENSOR - In the solid-state image sensor manufacturing method according to the present invention, metal silicide films comprising of at least one of cobalt silicide film, nickel silicide film, and titanium silicide film having similar specific resistances to metal films are selectively formed on the top faces (whole surfaces for example) of charge-transfer electrodes. The kind of manufacturing method realizes a solid-state image sensor which keeps the charge-transfer electrodes at low resistance, can operate at a high speed, and is highly sensitive even if the width of those electrodes is reduced. | 07-21-2011 |
20110186954 | PHOTORECEIVING DEVICE - The wiring arrangement length in a photoreceiving device is shortened. The photoreceiving device includes an amplifier for amplifying an output of the photoreceiving element and a photoreceiving element and they are mounted at a base member. A plurality of first bonding pads and a plurality of second bonding pads for connection to power supply are provided at both sides of a transmission path of an input or output signal of a photoreceiving element. Furthermore, at a position other than the parts arrangement surface of the base member, a plurality of first bonding pads are electrically connected to a plurality of second bonding pads. | 08-04-2011 |
20110198718 | SOLID STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SOLID STATE IMAGE PICKUP DEVICE - A method for manufacturing a solid state image pickup device including a first active region provided with a first conversion unit, a second active region provided with a second conversion unit, and a third active region adjoining the first and the second active regions with a field region therebetween and being provided with a pixel transistor, the method including the steps of ion-implanting first conductivity type impurity ions to form a semiconductor region serving as a potential barrier against the signal carriers at a predetermined depth in the third active region and ion-implanting second conductivity type impurity ions into the third active region with energy lower than the above-described ion-implantation energy. | 08-18-2011 |
20110204467 | SOLID-STATE IMAGE PICKUP DEVICEAND FABRICATION PROCESS THEREOF - A solid-state image pickup device has photodiodes, each of which includes an N-type region formed in a semiconductor substrate, a first silicon carbide layer formed above the N-type region, and a P-type region including a first silicon layer formed above the first silicon carbide layer and doped with boron. A fabrication process of such a solid-state image pickup device is also disclosed. | 08-25-2011 |
20110204468 | Image sensor and method of manufacturing the same - Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern. | 08-25-2011 |
20110227184 | Apparatus Having Thinner Interconnect Line for Photodetector Array and Thicker Interconnect Line for Periphery Region - An apparatus of one aspect includes a photodetector array, and a peripheral region at a periphery of the photodetector array. A thinner interconnect line corresponding to the photodetector array is disposed within one or more insulating layers. A thicker interconnect line corresponding to the peripheral region is disposed within the one or more insulating layers. Other apparatus, methods, and systems are also disclosed. | 09-22-2011 |
20110227185 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state imaging device includes a diffusion layer, first and second diffusion layers, and p-type amorphous silicon compound. The diffusion layer of a first conduction type is formed in a surface of a semiconductor substrate of the first conduction type. The diffusion layer functions as a charge accumulation part for accumulating electrons generated in the semiconductor substrate by light emitted from a back side of the semiconductor substrate to a surface side. The first and second diffusion layers of a second conduction type sandwich the charge accumulation part and are formed so as to reach the inside of the semiconductor substrate from the surface of the semiconductor substrate. The p-type amorphous silicon compound electrically isolates the charge accumulation part and is buried in the first and second trenches formed on the back side of the semiconductor substrate. | 09-22-2011 |
20110233709 | SUB-PIXEL NBN DETECTOR - A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area. | 09-29-2011 |
20110241151 | IMAGING DEVICE - An imaging device includes a plurality of lower electrodes, an upper electrode, an organic photoelectric conversion layer and a passivation layer. The plurality of lower electrodes are arranged in a two dimensional pattern above a substrate. The upper electrode is arranged above the plurality of lower electrodes so as to oppose the lower electrodes. The organic photoelectric conversion layer is sandwiched between the plurality of lower electrodes and the upper electrode. The passivation layer is provided above the upper electrode and covers the upper electrode. An angle which an end side surface of the lower electrode forms with respect to a surface of a lower layer supporting the lower electrode is 45-degree or more. The passivation layer is formed from a plurality of layers. Film stress of the entire passivation layer ranges from −200 MPa to 250 MPa. | 10-06-2011 |
20110248371 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a photoelectric conversion area configured with a first-conductivity-type-impurity area formed in the second-conductivity-type well to convert incident light to charges; a first-conductivity-type-charge retaining area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to retain the charges converted by the photoelectric conversion area until the charges are read out; a charge voltage conversion area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to convert the charges retained in the charge retaining area to a voltage; and a first-conductivity-type-layer area configured by forming a first-conductivity-type-in a convex shape from a boundary between the first-conductivity-type substrate and the second-conductivity-type well to a predetermined depth of the surface side under at least one portion of the charge retaining area and the charge voltage conversion area. | 10-13-2011 |
20110248372 | EPITAXIAL SUBSTRATE FOR SOLID-STATE IMAGING DEVICE WITH GETTERING SINK, SEMICONDUCTOR DEVICE, BACK ILLUMINATED SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor wafer is set in a laser irradiation apparatus, and laser beam irradiation is performed while the semiconductor wafer is moved. At this time, a laser beam emitted from a laser generating apparatus is condensed by a condensing lens so that the condensing point (focal point) is positioned at a depth of several tens of gm or so from one surface of the semiconductor wafer. Thereby, the crystal structure of the semiconductor wafer in the position having such a depth is modified, and a gettering sink is formed. | 10-13-2011 |
20110254116 | Photoelectric Conversion Module - A photoelectric conversion module X | 10-20-2011 |
20110260278 | System and Method of Planar Processing of Semiconductors into Detector Arrays - An article of manufacture and a method of defining a photodetector element are provided. The article of manufacture includes a photodector element comprising a junction formed by a first III-V semiconductor layer having a first charge type and a second III-V semiconductor layer comprising a second dopant having a second charge type. The second III-V semiconductor layer is disposed between the first III-V semiconductor layer and a wafer. Patterned dopant regions having a third charge type, the third charge type being the same as the first charge type, are disposed in the first III-V semiconductor layer. | 10-27-2011 |
20110291218 | PHOTODIODE AND PHOTODIODE ARRAY - A photodiode array PDA | 12-01-2011 |
20110298078 | METHOD FOR PRODUCTION OF SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING ELEMENT, AND IMAGING APPARATUS - Disclosed herein is a method for producing a solid-state imaging element which has pixels, each including a sensor section that performs photoelectric conversion and a charge transfer section that transfers charges generated by the sensor section. The method includes: forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation. | 12-08-2011 |
20110298079 | SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGING DEVICE - A semiconductor element includes: a p-type semiconductor region; an n-type light-receiving surface buried region buried in the semiconductor region; an n-type charge accumulation region buried in the semiconductor region, continuously to the light-receiving surface buried region, establishing a deeper potential well depth than the light-receiving surface buried region; a charge read-out region configured to read out the charges accumulated in the charge accumulation region; an exhaust-drain region buried in the semiconductor region, configured to extract the charges from the light-receiving surface buried region; a first potential controller configured to extract the charges from the light-receiving surface buried region to the exhaust-drain region; and a second potential controller configured to transfer the charges from the charge accumulation region to the charge read-out region. | 12-08-2011 |
20110304002 | PHOTOELECTRIC CONVERSION MODULE AND METHOD OF MANUFACTURING THE SAME - A photoelectric conversion module according to an embodiment of the present invention includes a plurality of units formed on a substrate and disposed parallel to each other, each including a plurality of photoelectric conversion cells formed in one direction, the plurality of units disposed in an orthogonal direction to the one direction, and a first separation region disposed between adjacent units of the units. In the solar cell module, each of the photoelectric conversion cells includes a second separation region, and the second separation region in one of the units is extended beyond the first separation region formed between one of the units and the other unit which is adjacent to the one of units toward a part of the other unit. | 12-15-2011 |
20110309462 | STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM INCLUDING CIRCUITS, PROCESSES, AND MATERIALS FOR ENHANCED IMAGING PERFORMANCE - In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period. | 12-22-2011 |
20120001291 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SOLID-STATE IMAGE SENSOR - A method of manufacturing a semiconductor device includes steps of providing a substrate including a semiconductor portion, a non-porous semiconductor layer, and a porous semiconductor layer arranged between the semiconductor portion and the non-porous semiconductor layer, forming a porous oxide layer by oxidizing the porous semiconductor layer, forming a bonded substrate by bonding a supporting substrate to a surface, on a side of the non-porous semiconductor layer, of the substrate on which the porous oxide layer is formed, and separating the semiconductor portion from the bonded substrate by utilizing the porous oxide layer. | 01-05-2012 |
20120001292 | METHOD FOR PRODUCING SOLID STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE - Certain embodiments provide a method for producing a solid-state imaging device including the steps of forming an interconnection layer, forming a passivation film, forming a resist layer, forming a plurality of protruding portions and an opening, and forming an electrode pad. In the step of forming the interconnection layer, the interconnection layer is formed on the surface of the semiconductor substrate having a photodiode. In the step of forming the resist layer, the resist layer is formed on the passivation film such that the resist layer has a plurality of first openings above the photodiode and has a second opening above the interconnection of the interconnection layer. In the step of forming the plurality of protruding portions and the opening, the plurality of protruding portions and the opening are formed by etching the passivation film via the resist layer. | 01-05-2012 |
20120012966 | MULTI-CAVITY OPTICAL SENSING AND THERMOPILE INFRARED SENSING SYSTEM - The present invention discloses a multi-cavity optical sensing and thermopile infrared sensing system, which comprises an optical sensing part, a dielectric layer, a plurality of optical cavities, and a plurality of thermocouples. The dielectric layer covers on the top of the optical sensing part. The optical cavities are formed by a plurality of metal reflectors inside the dielectric layer. The thermocouples are laterally disposed near the bottom of the dielectric layer. In addition, a low temperature region is formed in an area which is the overlapping of vertical projections of such thermocouples and the optical sensing part; a high temperature region is formed by the overlapping of vertical projections of such thermocouples, but without the overlaying which belongs to the vertical projection of the optical sensing part. Therefore, the system can sense the ambient light brightness, color conditions and human blackbody infrared signals within the range of 8-12 micrometers wavelength. | 01-19-2012 |
20120018834 | LINEAR IMAGE SENSOR - In a linear image sensor | 01-26-2012 |
20120025340 | VERTICAL SILICON PHOTOMULTIPLER WITH SUPERIOR QUANTUM EFFICIENCY AT OPTICAL WAVELENGTHS - The vertical silicon photomultiplier according to the present invention includes a trench electrode and a PN-junction layer perpendicular to the trench electrode forms and can maximize the quantum efficiency at optical wavelengths, 200˜900 nm in such a way that: it generates electric fields horizontal thereto, by applying a reverse bias voltage to between the trench electrode and the PN junction layer, so that, although ultraviolet light does not reach the PN-junction layer but is incident on the surface, electron-hole pairs can be produced by the horizontally generated electric fields although and an avalanche breakdown can be thus generated, and it allows ultraviolet light, capable of being transmitted to a relatively deep depth, to react with the PN-junction layer. | 02-02-2012 |
20120025341 | Aligning a sensor with a faceplate - An assembly includes a first packaged device that contains a first image sensor having first fiducial marks thereon. On a portion of the first packaged device at a predetermined location relative to the first fiducial marks is adhesive, and a first connection body is fixed within the adhesive and registered at the predetermined location relative to the first fiducial marks. The first connection body is mated into the first counter hole formed in a plate at a predetermined location. | 02-02-2012 |
20120038016 | BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE - In a back-illuminated solid-state image pickup device including a semiconductor substrate | 02-16-2012 |
20120061789 | IMAGE SENSOR WITH IMPROVED NOISE SHIELDING - An image sensor includes a device wafer including a pixel array for capturing image data bonded to a carrier wafer. Signal lines are disposed adjacent to a side of the carrier wafer opposite the device wafer and a metal noise shielding layer is disposed beneath the pixel array within at least one of the device wafer or the carrier wafer to shield the pixel array from noise emanating from the signal lines. A through-silicon-via (“TSV”) extends through the carrier wafer and the metal noise shielding layer and extends into the device wafer to couple to circuitry within the device wafer. Further noising shielding may be provided by highly doping the carrier wafer and/or overlaying the bottom side of the carrier wafer with a low-K dielectric material. | 03-15-2012 |
20120080766 | Image Sensing Device and Fabrication Thereof - An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well. | 04-05-2012 |
20120080767 | Solid-state imaging device, method for manufacturing the same, and electronic apparatus - A method for manufacturing a solid-state imaging device includes: forming pixels that receive incident light in a pixel array area of a substrate; forming pad electrodes in a peripheral area located around the pixel array area of the substrate; forming a carbon-based inorganic film on an upper surface of each of the pad electrodes including a connection surface electrically connected to an external component; forming a coated film that covers upper surfaces of the carbon-based inorganic films; and forming an opening above the connection surface of each of the pad electrodes to expose the connection surface. | 04-05-2012 |
20120086097 | FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT DOUBLE-SIDED PN-JUNCTION PHOTODIODE ARRAYS - The present application is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present application is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present application is fabricated such that the PN junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present application is a photodiode array aving PN junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias. | 04-12-2012 |
20120098081 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC EQUIPMENT - A backside illumination type solid-state imaging device includes stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit is formed with a logic circuit and a second multi-layered wiring layer, a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit, and a first shield wire which shields adjacent connection wires in one direction therebetween. | 04-26-2012 |
20120104532 | LOW CROSSTALK, FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT PHOTODIODE ARRAY - The present application is directed to novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined to the second side. The electrical contacts are in electrical communication with the first side through a doped region of a first type and a doped region of a second type, each of the regions substantially extending from the first side through to the second side. In another embodiment, the photodiode comprises a wafer with at least a first and a second side; and a plurality of electrical contacts physically confined to the second side, where the electrical contacts are in electrical communication with the first side through a diffusion of a p+ region through the wafer and a diffusion of an n+ region through the wafer. | 05-03-2012 |
20120112305 | SEMICONDUCTOR-METAL COIL UNITS AND ELECTRICAL APPARATUS COMPRISING SAME - Coil units are disclosed for use in electrical circuits. An exemplary coil unit comprises a rigid substrate having an electrically non-conductive three-dimensional (3-D) surface. At least one 3-D coil (shaped, for example, as a helical coil) of semiconductor material is formed on the substrate surface. Disposed on the at least one coil of semiconductor material is a 3-D coil of a conductive metal. The coil of conductive metal is situated sufficiently closely to the at least one coil of semiconductor material for the coil of conductive metal to produce Coulombic drag in the at least one coil of semiconductor material when the coils are conductive of low-mass electrons. The semiconductor material can be a photoconductor or other material that has conductive low-mass electrons. | 05-10-2012 |
20120119317 | ANTIBLOOMING IMAGING APPARATUS, SYSTEMS, AND METHODS - Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier arrangement is configured to block the flow of charge carriers generated outside a photosensitive region. In various embodiments, a potential well-potential barrier arrangement is formed to direct charge carriers away from the photosensitive region during an integration time. | 05-17-2012 |
20120139072 | Wafer Level Packaged Focal Plane Array - A method for manufacturing a wafer level packaged focal plane array, in accordance with certain embodiments, includes forming a detector wafer, which may include forming detector arrays and read-out circuits. The method may also include forming a lid wafer. Forming the lid wafer may include polishing a surface of a magnetically confined Czochralski (MCZ) wafer, bonding a Czochralski wafer to the MCZ wafer, and forming pockets in the Czochralski wafer. Each pocked may expose a portion of the polished surface of the MCZ wafer. The method may further include bonding the lid wafer and the detector wafer together such that the each detector array and read-out circuit are sealed within a different pocket, thereby forming a plurality of wafer level packaged focal plane arrays. The method may additionally include separating at least one wafer level packaged focal plan array from the plurality of wafer level packaged focal plane arrays. | 06-07-2012 |
20120139073 | METHOD FOR FABRICATING AT LEAST ONE DETECTOR PIXEL CELL, SENSOR COMPRISING AT LEAST ONE SUCH CELL - The invention concerns a method for fabricating at least one detector pixel cell ( | 06-07-2012 |
20120146172 | High Speed Photosensitive Devices and Associated Methods - High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm. | 06-14-2012 |
20120146173 | METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - The present disclosure provides a method of manufacturing a solid-state imaging device, including, forming on a first substrate a semiconductor thin film which is to be photoelectric conversion sections, forming driving circuits on a face side of a second substrate, laminating the first substrate and the second substrate by disposing the first substrate and second substrate opposite to each other in a condition in which the semiconductor thin film is connected to the driving circuits, and removing the first substrate from the semiconductor thin film in a condition in which the semiconductor thin film is left on the second substrate side. | 06-14-2012 |
20120161272 | IMAGE SENSOR IC - In a manufacturing method for an image sensor integrated circuit, a plurality of pixel regions each having a photodiode are arranged on a silicon substrate. A light-transmissive conductive film is formed over the silicon substrate. A protective film is formed on the light-transmissive conductive film while holding a potential of the light-transmissive conductive film at the same potential as that of the silicon substrate. | 06-28-2012 |
20120168892 | LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS - A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop. | 07-05-2012 |
20120181649 | Ground and Power Mesh in an Integrated Circuit Chip - A chip device with a number of individually powered parts, such as photoreceptors. A mesh is provided to provide power to the individual photoreceptors. The mesh may be provided for ground and power and/or both. The mesh may be on different layers, so that one portion of the mesh is exactly over the other portion of the mesh. The mesh takes up a portion of real estate on the chip in between the individual photoreceptors, in locations where image sensing parts cannot be located. In an embodiment, the mesh can be intentionally broken at various locations to optimize the path length. | 07-19-2012 |
20120187516 | SOLID-STATE IMAGING ELEMENTS, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE - A solid-state imaging element including: a sensor substrate in which a photoelectric conversion section is arranged and formed; a circuit substrate in which a circuit for driving the photoelectric conversion section is formed, the circuit substrate being laminated to the sensor substrate; a sensor side electrode drawn out to a surface of the sensor substrate on a side of the circuit substrate and formed as one of a projection electrode and a depression electrode; and a circuit side electrode drawn out to a surface of the circuit substrate on a side of the sensor substrate, formed as one of the depression electrode and the projection electrode, and joined to the sensor side electrode in a state of the circuit side electrode and the sensor side electrode being fitted together. | 07-26-2012 |
20120187517 | PHOTODETECTOR - In a photodetector | 07-26-2012 |
20120187518 | SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD OF THE SAME, AND IMAGING APPARATUS - A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate. | 07-26-2012 |
20120193744 | IMAGERS WITH BURIED METAL TRENCHES AND THOUGH-SILICON VIAS - An imaging system may include an imager with frontside components such as imaging pixels and backside components. The backside components may include at least a first redistribution layer having metal trenches and through-silicon vias (TSVs) that couple at least some of the backside components to the frontside components. The metal trenches and through-silicon vias may be formed simultaneously. The through-silicon vias may have a width greater than the width of the metal trenches. The greater width of the through-silicon vias may facilitate forming the through-silicon vias simultaneously with the metal trenches. | 08-02-2012 |
20120199933 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semi-conductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer. | 08-09-2012 |
20120199934 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region. | 08-09-2012 |
20120205768 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including an insulating structural body having a through opening, a wiring part formed on a front surface of the structural body, a solid-state imaging element which is connected to the wiring part and also is attached to the structural body so as to close the through opening, a translucent member which is opposed to the solid-state imaging element and is attached to the structural body through an adhesive inside an adhesion region R so as to close the through opening, and a solder resist film with which at least a part of the front surface of the structural body is covered, and is characterized in that a region R | 08-16-2012 |
20120217603 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 08-30-2012 |
20120217604 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, ELECTRONIC APPARATUS, AND SEMICONDUCTOR DEVICE - A solid-state imaging device includes a semiconductor layer where a pixel is formed in a pixel region and a semiconductor element is formed in a side opposite to where incident light is incident, a wiring layer provided on the semiconductor layer to cover the semiconductor element, a support substrate provided to oppose the wiring layer in a wiring layer surface opposite to the semiconductor layer, and an adhesion layer which adheres the wiring layer and the support substrate, where the wiring layer includes a pad electrode and an opening is formed so the pad electrode is exposed, a convex section is provided where the pad electrode is formed in at least a wiring layer surface opposing the support substrate or a support substrate surface opposing the wiring layer, and the adhesion layer is formed thinner at the formation portion of the pad electrode than a portion of the pixel region. | 08-30-2012 |
20120217605 | SEMICONDUCTOR DEVICE - A semiconductor device having a solid-state image sensor which can prevent inter-pixel crosstalk more reliably. The device includes: a semiconductor substrate having a main surface; a first conductivity type impurity layer located over the main surface of the substrate; a photoelectric transducer including a first conductivity type impurity region and a second conductivity type impurity region which are joined to each other over the first conductivity type impurity layer; and transistors which configure a unit pixel including the photoelectric transducer and are electrically coupled to the photoelectric transducer. At least part of the area around the photoelectric transducer in a plan view contains an air gap and also has an isolation insulating layer for electrically insulating the photoelectric transducer and a photoelectric transducer adjacent to it from each other. The isolation insulating layer abuts on the top surface of the first conductivity type impurity layer. | 08-30-2012 |
20120217606 | METHOD OF MANUFACTURING SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING ELEMENT AND ELECTRONIC APPARATUS - A method of manufacturing a solid-state imaging element includes: manufacturing an element chip in which photoelectric conversion units are arranged on a main surface side; preparing a base configured using a material with an expansion coefficient greater than the element chip and having an opening of which the periphery of the opening is shaped as a flat surface; expanding the base by heating, mounting the element chip on the flat surface of the base in a state where the opening of the base is covered; and three-dimensionally curving a portion corresponding to the opening in the element chip by cooling and contracting the base in a state where the element chip is fixed to the flat surface of the expanded base. | 08-30-2012 |
20120235270 | SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME - A semiconductor apparatus including a substrate, a pixel array on the substrate, first and second conductive pads between which the substrate locates is provided. The apparatus also comprises an insulating layer arranged between the substrate and the first conductive pad; a third conductive pad arranged between the substrate and the insulating layer; a first conductive member which passes through the insulating layer and connects the first and third conductive pads to each other; and a second conductive member which passes through the substrate and connects the second and third conductive pads to each other. The pixel array further comprises a conductive line connected to circuit elements included in pixels aligned in a row or column direction. The first conductive pad is connected to the conductive line in an interval between the pixels. | 09-20-2012 |
20120248563 | POLARIZATION ORGANIC PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR PRODUCING POLARIZATION ORGANIC PHOTOELECTRIC CONVERSION DEVICE, POLARIZATION OPTICAL DEVICE, IMAGING DEVICE, AND ELECTRONIC APPARATUS - A polarization organic photoelectric conversion device having a structure in which an organic photoelectric conversion layer is interposed between a first electrode and a second electrode, at least one of which is transparent, wherein the organic photoelectric conversion layer is one obtained by uniaxially orienting at least a portion thereof in the plane in advance. | 10-04-2012 |
20120267747 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state image pickup device according to the present invention is a backside-illuminated solid-state image pickup device that includes a plurality of pixels each having a photoelectric conversion portion. A p-type semiconductor region | 10-25-2012 |
20120273912 | X-Y ADDRESS TYPE SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING THE SAME - In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced. | 11-01-2012 |
20120273913 | FLEXIBLE LATERAL PIN DIODES AND THREE-DIMENSIONAL ARRAYS AND IMAGING DEVICES MADE THEREFROM - Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device. | 11-01-2012 |
20120280349 | PHOTOVOLTAIC MODULE STRUCTURE AND METHOD FOR PRODUCING AN ELECTRICALLY CONDUCTIVE CONNECTION BETWEEN TWO CONTACT LAYERS SPACED APART FROM ONE ANOTHER, IN PARTICULAR IN THE PHOTOVOLTAIC MODULE STRUCTURE - The present invention relates to a photovoltaic module structure | 11-08-2012 |
20120292730 | Semiconductor Device Having a Bonding Pad and Method of Manufacturing The Same - A semiconductor device including a device substrate having a front side and a back side. The semiconductor device further includes an interconnect structure disposed on the front side of the device substrate, the interconnect structure having a n-number of metal layers. The semiconductor device also includes a bonding pad disposed on the back side of the device substrate, the bonding pad extending through the interconnect structure and directly contacting the nth metal layer of the n-number of metal layers. | 11-22-2012 |
20120299144 | SEMICONDUCTOR LIGHT RECEIVING DEVICE - A semiconductor light-detecting device includes: a semi-insulating substrate; and n light-detecting elements (n is a natural number equal to or larger than 4) electrically isolated from each other and on the semi-insulating substrate. Each light-detecting element includes a conductive layer of a first conductivity type, a light absorption layer, a window layer, and an impurity diffusion region of a second conductivity type, which are laminated, one on another, on the semi-insulating substrate. The light absorption layer is a photoelectrical converter. The impurity diffusion region is located in part of the window layer and serves as a light-detecting section. A part of the conductive layer and the light absorption layer use the same material. The n light-detecting elements are not all located on a common straight line. | 11-29-2012 |
20120306039 | SUB-PIXEL NBN DETECTOR - A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area. | 12-06-2012 |
20120306040 | INSULATING METAL SUBSTRATE AND SEMICONDUCTOR DEVICE - An insulating metal substrate is used for a semiconductor device such as a solar cell. The substrate includes a metal base made of steel, iron-based alloy steel or titanium, an aluminum layer and an insulating layer obtained by anodizing aluminum. An alloy layer primarily made of an alloy of a composition expressed by Al | 12-06-2012 |
20120313209 | 3D Integrated Microelectronic Assembly With Stress Reducing Interconnects And Method Of Making Same - A microelectronic assembly and method of making, which includes a first microelectronic element (including a substrate with first and second opposing surfaces, a semiconductor device, and conductive pads at the first surface which are electrically coupled to the semiconductor device) and a second microelectronic element (including a handier with first and second opposing surfaces, a second semiconductor device, and conductive pads at the handler first surface which are electrically coupled to the second semiconductor device). The first and second microelectronic elements are integrated such that the second surfaces face each other. The first microelectronic element includes conductive elements each extending from one of its conductive pads, through the substrate to the second surface. The second microelectronic element includes conductive elements each extending between the handler first and second surfaces. The conductive elements of the first microelectronics element are electrically coupled to the conductive elements of the second microelectronics element. | 12-13-2012 |
20120313210 | LIGHT-RECEIVING DEVICE, LIGHT RECEIVER USING SAME, AND METHOD OF FABRICATING LIGHT-RECEIVING DEVICE - An apparatus includes a flip-chip semiconductor substrate, a light detection element configured to be formed over the flip-chip semiconductor substrate and to have a laminate structure including a first semiconductor layer of a first-conductive-type, a light-absorption layer formed over the first semiconductor layer, and a second semiconductor layer of a second-conductive-type formed over the light-absorption layer, an inductor configured to be connected to the light detection element over the flip-chip semiconductor substrate, an output electrode for bump connection configured to output a current generated by the light detection element through the inductor, a bias electrode for bump connection configured to apply a bias voltage to the light detection element through a bias electrode, and a line configured to cause a metal line of the inductor and the light detection element to be connected to the output electrode or the bias electrode. | 12-13-2012 |
20120319224 | IMAGE PICKUP DEVICE AND CAMERA - An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged. | 12-20-2012 |
20130001730 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a semiconductor substrate, a connection portion, and one or more first photoelectric conversion units formed in the semiconductor substrate. The semiconductor substrate has a back side and a front side. The back side is a light incident surface, and the front side is a circuit-forming surface. The connection portion is connected to a contact plug that transfers signal charges generated on the back side of the semiconductor substrate into the semiconductor substrate. The connection portion has a peak of an impurity concentration distribution near an interface of the semiconductor substrate on the back side of the semiconductor substrate. | 01-03-2013 |
20130001731 | Non-Planar Inorganic Optoelectronic Devices - A method of fabricating an optoelectronic device includes creating an optoelectronic structure on a first substrate. The optoelectronic structure includes a release layer and a plurality of inorganic semiconductor layers supported by the release layer. The plurality of inorganic semiconductor layers is configured to be active in operation of the optoelectronic device. The plurality of inorganic semiconductor layers are permanently attached to a second substrate, which is flexible. The plurality of inorganic semiconductor layers are released from the first substrate after the attaching step, and the second substrate is deformed to a non-planar configuration. | 01-03-2013 |
20130001732 | PIXEL SENSORS OF MULTIPLE PIXEL SIZE AND METHODS OF IMPLANT DOSE CONTROL - CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in a same substrate and forming a masking pattern over at least one of the plurality of pixel sensors that has a pixel size larger than a non-masked pixel sensor of the plurality of pixel sensors. The method further includes providing a single dosage implant to the plurality of pixel sensors. The at least one of the plurality of pixel sensors with the masking pattern receives a lower dosage than the non-masked pixel sensor. | 01-03-2013 |
20130009267 | Providing Variable Cell Density and Sizes in a Radiation Detector - An apparatus and method to decrease light saturation in a photosensor array and increase detection efficiency uses a light distribution profile from a scintillator-photodetector geometry to configure the photosensor array to have a non-uniform sensor cell pattern, with varying cell density and/or varying cell size and shape. A solid-state photosensor such as a SiPM sensor having such a non-uniform cell structure realizes improved energy resolution, higher efficiency and increased signal linearity. In addition the non-uniform sensor cell array can have improved timing resolution due to improvements in statistical fluctuations. A particular embodiment for such photosensors is in PET medical imaging. | 01-10-2013 |
20130009268 | ALIGNMENT MARKS AND ALIGNMENT METHODS FOR ALIGNING BACKSIDE COMPONENTS TO FRONTSIDE COMPONENTS IN INTEGRATED CIRCUITS - An imaging system may include an imager integrated circuit with frontside components such as imaging pixels and backside components such as color filters and microlenses. The imager integrated circuit may be mounted to a carrier wafer with alignment marks. Bonding marks on the carrier wafer and the imager integrated circuit may be used to align the carrier wafer accurately to the imager integrated circuit. The alignment marks on the carrier wafer may be read, by fabrication equipment, to align backside components of the imager integrated circuit, such as color filters and microlenses, with backside components of the imager integrated circuit, such as photodiodes. | 01-10-2013 |
20130026594 | IMAGE SENSOR WITH CONTROLLABLE VERTICALLY INTEGRATED PHOTODETECTORS - An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential. | 01-31-2013 |
20130032918 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor may include a semiconductor substrate, a plurality of light receiving devices formed within the semiconductor substrate, and a plurality of device isolation films for isolating the light receiving devices from each other. When an arrangement direction of a pixel array may be formed by arranging the light receiving devices is a horizontal direction, the pixel array may be formed by alternately arranging a first type light receiving device and a second type light receiving device having different horizontal lengths. | 02-07-2013 |
20130032919 | SOLID-STATE IMAGE PICKUP ELEMENT AND ELECTRONIC DEVICE - There is provided a solid-state image pickup element including a pixel array part in which a plurality of pixels are arranged on a silicon substrate in arrays, and a drive part driving the pixel. The pixel includes a photoelectric conversion part formed near a second face of the silicon substrate opposite to a first face on which a wiring layer is laminated, for generating a charge corresponding to incident light, an overflow part formed in contact with the second face and fixed to a predetermined voltage, and a potential barrier part formed to be connected with the photoelectric conversion part and the .overflow part, for serving as a barrier against a charge overflowed from the photoelectric conversion part on the overflow part. | 02-07-2013 |
20130049155 | PHOTOSITE WITH PINNED PHOTODIODE - A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well. | 02-28-2013 |
20130049156 | SOLID-STATE IMAGING APPARATUS - In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity. | 02-28-2013 |
20130056844 | Stepped Package For Image Sensor And Method Of Making Same - An image sensor package includes a crystalline handler having opposing first and second surfaces, and a cavity formed into the first surface. At least one step extends from a sidewall of the cavity, wherein the cavity terminates in an aperture at the second surface. A cover is mounted to the second surface and extends over and covers the aperture. The cover is optically transparent to at least one range of light wavelengths. A sensor chip is disposed in the cavity and mounted to the at least one step. The sensor chip includes a substrate with front and back opposing surfaces, a plurality of photo detectors formed at the front surface, and a plurality of contact pads formed at the front surface which are electrically coupled to the photo detectors. | 03-07-2013 |
20130069192 | HYBRID CIRCUIT STRUCTURE AND PARTIAL BACKFILL METHOD FOR IMPROVING THERMAL CYCLING RELIABILITY OF SAME - A method of improving thermal cycling reliability for a hybrid circuit structure requires providing at least two circuit layers, aligning two of the circuit layers vertically such that their respective circuit elements have a precise and well-defined spatial relationship, and providing an adhesive material which wicks into a portion of the space between the aligned layers so as to mitigate damage to the structure and/or interconnections that might otherwise occur due to thermal contraction mismatch between the layers. The adhesive material is required to have an associated viscosity such that, when provided under predetermined conditions, the adhesive stops wicking before reaching, and possibly degrading the performance of, the circuit elements. | 03-21-2013 |
20130069193 | INTERMEDIATE LAYER FOR STACKED TYPE PHOTOELECTRIC CONVERSION DEVICE, STACKED TYPE PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING STACKED TYPE PHOTOELECTRIC CONVERSION DEVICE - An intermediate layer for a stacked type photoelectric conversion device including an n-type silicon-based stacked body including an n-type crystalline silicon-based semiconductor layer and an n-type silicon-based composite layer, and a p-type silicon-based stacked body including a p-type crystalline silicon-based semiconductor layer and a p-type silicon-based composite layer, the n-type crystalline silicon-based semiconductor layer of the n-type silicon-based stacked body being in contact with the p-type crystalline silicon-based semiconductor layer of the p-type silicon-based stacked body, a stacked type photoelectric conversion device including the same, and a method for manufacturing a stacked type photoelectric conversion device. | 03-21-2013 |
20130087877 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device generates signals by photoelectric conversion elements included in a first substrate in which circuit elements of a plurality of pixels are arranged. The solid-state imaging device outputs, from the plurality of pixels via output circuits, the signals that are generated by the photoelectric conversion elements and are via connection parts that electrically connect the first substrate with a second substrate, the output circuits being included in the second substrate. | 04-11-2013 |
20130105931 | SOLID-STATE IMAGING APPARATUS | 05-02-2013 |
20130105932 | METHOD FOR MOLECULAR ADHESION BONDING AT LOW PRESSURE | 05-02-2013 |
20130119502 | ELECTRICAL OVERSTRESS PROTECTION USING THROUGH-SILICON-VIA (TSV) - A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications. | 05-16-2013 |
20130119503 | DETECTION DEVICE FOR TWO DIFFERENT COLOURS WITH IMPROVED OPERATING CONDITIONS - The substrate includes successively a first semiconductor layer having a first bandgap energy, a semiconductor buffer layer, a second semiconductor layer having a first bandgap energy different from the first bandgap energy. Two photodetectors sensitive to two different colors are formed respectively on the first and second semiconductor layers. A first biasing pad electrically connects the first semiconductor layer to a first biasing circuit. A second biasing pad electrically connects the second semiconductor layer to a second biasing circuit. The first biasing pad is devoid of electrical contact with the second semiconductor layer. | 05-16-2013 |
20130127004 | Image Sensor Module Package and Manufacturing Method Thereof - An image sensor module includes a substrate, a circuit layer, a flip chip, an insulating layer, and a conducting layer. The substrate has at least one transparent area and defines a first surface and a second surface. The circuit layer is provided on the first surface of the substrate. The flip chip is connected to the circuit layer. The insulating layer substantially encases the flip chip and a part of the circuit layer, wherein the insulating layer has at least one groove at a lateral side of said insulating layer thereof each provided with a metal layer. The conducting layer is provided on a top surface of the insulating layer, wherein the conducting layer is electrically connected to the circuit layer via the metal layer. | 05-23-2013 |
20130140664 | FLIP CHIP PACKAGING STRUCTURE - The present invention discloses a flip chip packaging structure which is applied to a process of a compact camera module (CCM), and the structure thereof comprises an image sensor component, at least one connection member, a circuit board and an insulating plate. The image sensor component is electrically connected with the circuit board via an electrical-conduction of the connection body. Hence, by disposing the insulating plate between the image sensor component and the circuit board, the present invention not only can provide a thermal insulating protection to the image sensor component but also use enough space to execute a surface mount technology (SMT), so as to simplify the flip chip process and to increase the yield of manufacture. | 06-06-2013 |
20130140665 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 06-06-2013 |
20130154046 | IMAGE SENSOR - An image sensor includes a plurality of unit pixels. Each unit pixel has a photo diode for sensing external light to generate photo charges. A transfer transistor is connected to the photo diode for storing the photo charges generated in the photo diode into a floating diffusion region when being turned-on. An amplification transistor amplifies the photo charges stored into the floating diffusion region. A select transistor, connected to the amplification transistor, performs a switching operation. An output line, extended in a column direction, outputs the photo charges in accordance with the switching operation of the select transistor. The photo diode may be formed in such a manner to share the output line with its adjacent photo diode in a horizontal direction, so that the photo charges generated in the photo diode and its adjacent photo diode are outputted through the output line. | 06-20-2013 |
20130154047 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR FABRICATING THE PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a substrate, a plurality of photoelectric conversion cells formed on the main surface of the substrate, a current-collecting wiring formed on the plurality of photoelectric conversion cells, an output wiring connected to the current-collecting wiring, and a back-side protective member bonded to the plurality of photoelectric conversion cells via a sealing member in a manner such that the plurality of photoelectric conversion cells formed on the main surface of the substrate are interposed between the substrate and the back-side protective member via the sealing member. The current-collecting wiring and the output wiring are positioned such that the current-collecting wiring and the output wiring do not overlap with each other above the main surface of the substrate. | 06-20-2013 |
20130168794 | Seamless Multi-Poly Structure and Methods of Making Same - A sensor array is integrated onto the same chip as core logic. The sensor array uses a first polysilicon and the core logic uses a second polysilicon. The first polysilicon is etched to provide a tapered profile edge in the interface between the sensor array and the core logic regions to avoid an excessive step. Amorphous carbon can be deposited over the interface region without formation of voids, thus providing for improved manufacturing yield and reliability. | 07-04-2013 |
20130168795 | Color Image Sensing - An apparatus including a plurality of sensor elements, configured in an arrangement having a repeating pattern of sensor elements, the plurality of sensor elements including first monochromatic sensor elements configured to sense visible light of a first color; second monochromatic sensor elements configured to sense visible light of a second color; and panchromatic sensor elements configured to sense visible light of at least the first color and the second color, wherein the majority of the plurality of sensor elements are panchromatic sensor elements. | 07-04-2013 |
20130181315 | SILICON PHOTOELECTRIC MULTIPLIER - A cell for a silicon-based photoelectric multiplier may comprise a first layer of a first conductivity type and a second layer of a second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction. The cell may be processed by an ion implantation act wherein parameters of the ion implantation are selected such that due to an implantation-induced damage of the crystal lattice, an absorption length of infrared light of a wavelength in a range of − | 07-18-2013 |
20130181316 | SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SOLID-STATE IMAGING DEVICE - A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate. | 07-18-2013 |
20130193547 | SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE - Disclosed herein is a solid-state imaging element including: a semiconductor layer; a plurality of photoelectric conversion sections arranged within the semiconductor layer; and a pixel separating section disposed in a shape of a same width from a light receiving surface of the semiconductor layer to an opposite surface of the semiconductor layer from the light receiving surface in a position of separating the photoelectric conversion sections from each other for each pixel, the pixel separating section being formed by a material including an impurity. | 08-01-2013 |
20130207218 | Novel Condition Before TMAH Improved Device Performance - The present disclosure relates to a method of forming a back-side illuminated CMOS image sensor (BSI CIS). In some embodiments, the method comprises forming a plurality of photodetectors within a front-side of a semiconductor substrate. An implant is performed on the back-side of the semiconductor substrate to form an implantation region having a doping concentration that is greater in the center than at the edges of the semiconductor substrate. The back-side of the workpiece is then exposed to an etchant, having an etch rate that is inversely proportional to the doping concentration, which thins the semiconductor substrate to a thickness that allows for light to pass through the back-side of the substrate to the plurality of photodetectors. By implanting the substrate prior to etching, the etching rate is made uniform over the back- side of the substrate improving total thickness variation between the photodetectors and the back-side of the substrate. | 08-15-2013 |
20130207219 | PIXEL HAVING TWO SEMICONDUCTOR LAYERS, IMAGE SENSOR INCLUDING THE PIXEL, AND IMAGE PROCESSING SYSTEM INCLUDING THE IMAGE SENSOR - An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices. | 08-15-2013 |
20130214373 | SUB-PIXEL NBN DETECTOR - A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area. | 08-22-2013 |
20130214374 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SOLID-STATE IMAGE SENSOR - A method of manufacturing a semiconductor device includes steps of providing a substrate including a semiconductor portion, a non-porous semiconductor layer, and a porous semiconductor layer arranged between the semiconductor portion and the non-porous semiconductor layer, forming a porous oxide layer by oxidizing the porous semiconductor layer, forming a bonded substrate by bonding a supporting substrate to a surface, on a side of the non-porous semiconductor layer, of the substrate on which the porous oxide layer is formed, and separating the semiconductor portion from the bonded substrate by utilizing the porous oxide layer. | 08-22-2013 |
20130221471 | BACKSIDE ILLUMINATED IMAGE-SENSOR AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a backside-illuminated image sensor may include forming an insulating layer having a predetermined depth in an inactive region of a front side of a semiconductor substrate and forming a photodetector in an active region of a front side of the semiconductor substrate having the insulating layer. Further, the method may include stacking a support substrate on and/or over the front side of the semiconductor substrate having the photodetector. Furthermore, the method may include performing back grinding on the rear side of the semiconductor substrate by using the insulating layer as the stop point. | 08-29-2013 |
20130221472 | RANGE SENSOR AND RANGE IMAGE SENSOR - A signal charge collecting region is disposed inside a charge generating region so as to be surrounded by the charge generating region, and collects signal charges from the charge generating region. An unnecessary charge collecting region is disposed outside the charge generating region so as to surround the charge generating region, and collects unnecessary charges from the charge generating region. A transfer electrode is disposed between the signal charge collecting region and the charge generating region, and causes the signal charges from the charge generating region to flow into the signal charge collecting region in response to an input signal. An unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region, and causes the unnecessary charges from the charge generating region to flow into the unnecessary charge collecting region in response to an input signal. | 08-29-2013 |
20130221473 | PHOTOELECTRIC CONVERSION DEVICE, IMAGE PICKUP SYSTEM AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate. | 08-29-2013 |
20130234277 | SEMICONDUCTOR DEVICE AND IMAGING APPARATUS - The invention relates to a semiconductor device having a vertical transistor bipolar structure of emitter, base, and collector formed in this order from a semiconductor substrate surface in a depth direction. The semiconductor device includes an electrode embedded from the semiconductor substrate surface into the inside and insulated by an oxide film. In the surface of the substrate, a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region, and a first-conductivity-type third semiconductor region are arranged, from the surface side, inside a semiconductor device region surrounded by the electrode and along the electrode with the oxide film interposed therebetween, the second semiconductor region located below the first semiconductor region, the third semiconductor region located below the second semiconductor region. The electrode is insulated from the first to third semiconductor regions, and current gain is variable through application of voltage to the electrode. | 09-12-2013 |
20130241022 | SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - There is provided a solid-state imaging device including a wafer in which a guard ring with conductivity in an insulation film layered on a first conductivity type substrate is formed between an edge portion of at least a first chip, out of the first chip and a second chip of a layered chip, and a scribe line region, at least two second conductivity type layers are formed at an interval within a region corresponding to the guard ring, in the first conductivity type substrate, and the guard ring includes a first guard ring part connected to one of the second conductivity type layers on a chip edge portion side, and a second guard ring part connected to another one of the second conductivity type layers on a scribe line side. | 09-19-2013 |
20130256822 | METHOD AND DEVICE WITH ENHANCED ION DOPING - Techniques for providing a pixel cell which exhibits improved doping in a semiconductor substrate. In an embodiment, a first doping is performed through a backside of the semiconductor substrate. After the first doping, the semiconductor substrate is thinned to expose a front side which is opposite of the backside. In another embodiment, a second doping is performed through the exposed front side of the thinned semiconductor substrate to form at least part of a pixel cell structure. | 10-03-2013 |
20130256823 | METHOD FOR MANUFACTURING DETECTING ELEMENT, METHOD FOR MANUFACTURING IMAGING DEVICE, DETECTING ELEMENT, IMAGING DEVICE, AND ELECTRONIC DEVICE - A detecting element has an absorbing section where a temperature rises according to an amount of electromagnetic waves which are absorbed and a detecting section where characteristics change according to an amount of heat which is transmitted from the absorbing section. A method for manufacturing the detecting element includes: forming the detecting section on a substrate; forming a protective film which covers the detecting section; forming a hollow space portion in a region which overlaps with the detecting section of the substrate in a planar view after the forming of the protective film; and forming the absorbing section by applying a liquid body, which contains a material constituting the absorbing section, in a region on the protective film on an opposite side from the detection section, which overlaps with the detecting section in a planar view, and solidifying the liquid body after the forming of the hollow space portion. | 10-03-2013 |
20130270667 | Metal Grid in Backside Illumination Image Sensor Chips and Methods for Forming the Same - A method includes forming a plurality of image sensors on a front side of a semiconductor substrate, and forming a dielectric layer on a backside of the semiconductor substrate. The dielectric layer is over the semiconductor substrate. The dielectric layer is patterned into a plurality of grid-filling regions, wherein each of the plurality of grid-filling regions overlaps one of the plurality of image sensors. A metal layer is formed on top surfaces and sidewalls of the plurality of grid-filling regions. The metal layer is etched to remove horizontal portions of the metal layer, wherein vertical portions of the metal layer remain after the step of etching to form a metal grid. A transparent material is filled into grid openings of the metal grid. | 10-17-2013 |
20130285187 | PHOTO CELL DEVICES AND METHODS FOR SPECTROMETRIC APPLICATIONS - Embodiments relate to photo cell devices. In an embodiment, a photo cell device includes an array of transmission layers having different optical thicknesses and with photo diodes underneath. The transmission layers can include two different materials, such as a nitride and an oxide, that cover each diode with a different proportional area density in a damascene-like manner. Embodiments provide advantages over conventional devices, including that they can be integrated into a standard CMOS process and therefore simpler and less expensive to produce. | 10-31-2013 |
20130292788 | Self-aligned Semiconductor Ridges in Metallic Slits as a Platform for Planar Tunable Nanoscale Resonant Photodetectors - A photodetector having a ridge-in-slit geometry is provided, where a semiconductor ridge is laterally sandwiched in a metallic slit. This assembly is disposed on a layer of semiconducting material, which in turn is disposed on an insulating substrate. These structures can provide efficient resonant detectors having the wavelength of peak response set by the ridge width. Thus a lateral feature defines the wavelength of peak responsivity, as opposed to a vertical feature. | 11-07-2013 |
20130313673 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged in a two-dimensional array, in which the imaging region includes an effective pixel and a black reference pixel; and a shape of a floating diffusion portion in the effective pixel is different from that of a floating diffusion portion in the black reference pixel. | 11-28-2013 |
20130328151 | INTEGRATED CIRCUIT STRUCTURE, BACK SIDE ILLUMINATION IMAGE SENSOR AND INTEGRATED CIRCUIT PROCESS THEREOF - An integrated circuit structure or a back side illumination image sensor is provided, wherein the integrated circuit structure includes a bond pad and a metal structure located in a dielectric layer, wherein the bond pad and the metal structure have different materials, and the back side illumination image sensor includes an image sensor unit and an interconnect structure respectively located on both sides of a bond pad. Moreover, an integrated circuit process forming said integrated circuit structure or back side illumination image sensor is also provided. | 12-12-2013 |
20130328152 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A method for manufacturing a solid-state imaging device includes: forming pixels that receive incident light in a pixel array area of a substrate; forming pad electrodes in a peripheral area located around the pixel array area of the substrate; forming a carbon-based inorganic film on an upper surface of each of the pad electrodes including a connection surface electrically connected to an external component; forming a coated film that covers upper surfaces of the carbon-based inorganic films; and forming an opening above the connection surface of each of the pad electrodes to expose the connection surface. | 12-12-2013 |
20140015086 | Interconnect Structure for CIS Flip-Chip Bonding and Methods for Forming the Same - A device includes a metal pad at a surface of an image sensor chip, wherein the image sensor chip includes an image sensor. A stud bump is disposed over, and electrically connected to, the metal pad. The stud bump includes a bump region, and a tail region connected to the bump region. The tail region includes a metal wire portion substantially perpendicular to a top surface of the metal pad. The tail region is short enough to support itself against gravity. | 01-16-2014 |
20140035087 | ETCHING NARROW, TALL DIELECTRIC ISOLATION STRUCTURES FROM A DIELECTRIC LAYER - Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed. | 02-06-2014 |
20140042582 | SOLID-STATE IMAGING APPARATUS AND IMAGING APPARATUS - A solid-state imaging apparatus in which a first substrate, a second substrate electrically connected to the first substrate through a connector and circuit elements disposed in the first substrate and in the second substrate, and forming pixels, each of the pixels includes a photoelectric conversion element disposed in the first substrate and configured to generate a signal corresponding to an amount of incident light, and a signal holder disposed in the second substrate in correspondence with the photoelectric conversion element and configured to hold an output signal corresponding to the signal generated by the corresponding photoelectric conversion element, and the signal holder is formed by laminating a capacitance element including a plurality of electrodes on a plurality of layers within the second substrate. | 02-13-2014 |
20140042583 | METHOD OF FORMING PATTERN AND SOLID-STATE IMAGE SENSOR DEVICE - A method of forming a pattern on a silicon layer of a substrate, to be processed, wherein a semiconductor device is formed at a front surface side of the substrate that is supported by a support substrate at the front surface side, includes an etching step of etching the substrate by plasma via a mask having a predetermined pattern formed at a back surface side of the silicon layer of the substrate; and a cleaning step of cleaning the substrate by plasma using cleaning gas obtained by mixing CF series gas and inert-gas, after the etching step. | 02-13-2014 |
20140048900 | INTEGRATED CIRCUIT COMBINATION OF A TARGET INTEGRATED CIRCUIT, PHOTOVOLTAIC CELLS AND LIGHT SENSITIVE DIODES CONNECTED TO ENABLE A SELF-SUFFICIENT LIGHT DETECTOR DEVICE - An integrated circuit (IC) comprises a plurality of photovoltaic (PV) cells formed over a passivation layer of a target integrated circuit (TIC), wherein at least one PV cell of the plurality of PV cells is usable as a light sensing device; an interface to an energy storage unit; the TIC comprising at least: a control unit; and a switching circuit, the switching circuit coupled to the plurality of PV cells, the energy storage, and the control unit; wherein the control unit is configured to control at least the switching circuit to configure a connection scheme, wherein the connection scheme devises at least one first PV cell of the plurality of PV cells to connect to the energy storage and at least one second PV cell to connect to the control unit for light detection. | 02-20-2014 |
20140061841 | SEMICONDUCTOR PACKAGE - A semiconductor package including a substrate including an epoxy-based material, an image sensor chip mounted on the substrate, and an attaching part provided between the substrate and the image sensor chip may be provided. The attaching part may include a first attaching part, and a second attaching part provided around the first attaching part. The first attaching part may achieve high reliability of the semiconductor package in association with the second attaching part. The second attaching part may include a material having a low rigidity. Thus, it is possible to reduce or prevent warpage of the image sensor chip from occurring. Due to the presence of the second attaching part, a plane coverage ratio of the first attaching part relative to the image sensor chip can be reduced. Thus, the warpage of the image sensor chip can be reduced or prevented more effectively. | 03-06-2014 |
20140070352 | Stress Release Layout and Associated Methods and Devices - An embodiment semiconductor device includes a substrate such as a silicon or silicon-containing film, a pixel array supported by the substrate, and a metal stress release feature arranged around a periphery of the pixel array. The metal stress release feature may be formed from metal strips or discrete metal elements. The metal stress release feature may be arranged in a stress release pattern that uses a single line or a plurality of lines. The metal stress release pattern may also use metal corner elements at ends of the lines. | 03-13-2014 |
20140084407 | IMAGING SYSTEMS WITH CIRCUIT ELEMENT IN CARRIER WAFER - An imaging system may include an image sensor package with an image sensor wafer mounted on a carrier wafer, which may be a silicon substrate. A capacitor may be formed in the carrier wafer. Trenches may be etched in a serpentine pattern in the silicon substrate. Conductive plates of the capacitor may be formed at least partially in the trenches. An insulator material may be formed between the capacitor and the silicon substrate. A dielectric layer may be formed between the conductive plates of the capacitor. The image sensor package may be mounted on a printed circuit board via a ball grid array. Conductive vias may electrically couple the capacitor and the image sensor wafer to the printed circuit board. | 03-27-2014 |
20140091420 | METHOD OF MONOLITHICALLY INTEGRATED OPTOELECTRICS - A monolithically integrated sensor is disclosed in the form of light detector(s), visible light emitter(s) and associated control circuit(s) monolithically integrated on a single silicon microchip. The detector structures consist of p-i-n photodiode structures, both diffused into and deposited on the surface of the silicon substrate. The emitter structures consist of III-V compound semiconductor hetero-epitaxial layers deposited on the surface of the silicon substrate. The control circuits are fabricated using traditional CMOS high volume manufacturing techniques. The sensor assembly is designed to be processed in a traditional CMOS wafer fab. The sensor assembly is further designed to be packaged at the wafer level. | 04-03-2014 |
20140110810 | PHOTODIODE ARRAY - A light receiving region includes a plurality of light detecting sections | 04-24-2014 |
20140110811 | SEMICONDUCTOR DEVICE, IMAGING DEVICE, METHOD OF INSPECTING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are electrically connected to each other in a state in which a first connection surface of the first semiconductor substrate and a second connection surface of the second semiconductor substrate face each other. A concave portion is formed in at least one of the first connection surface and the second connection surface. An electrode, which is electrically connected to a portion of wirings included in a wiring layer provided in the first semiconductor substrate or the second semiconductor substrate in which the concave portion is formed and is capable of being electrically connected to an outside, is formed in an inside of the concave portion. | 04-24-2014 |
20140117485 | NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT - An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer. | 05-01-2014 |
20140159188 | Application of Reduced Dark Current Photodetector - A IDCA system with internal nBn photo-detector comprising: a photo-absorbing layer comprising an n-doped semiconductor exhibiting valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo-absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and conductance band gap sufficient to prevent tunneling of majority carriers from the photo-absorbing layer to the contact area, blocking the flow of thermalized majority carriers from the photo-absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, equalizing barrier conductance band energy levels and photo-absorbing layers. | 06-12-2014 |
20140159189 | Semiconductor Detector Device - A semiconductor detector device comprises a layer of semiconductor material for generating charge in response to an input event and an array of pixels for collecting charge. Tracks are connected to the pixels to supply signals representing the collected charge to a reader circuit. The pixels are grouped into sets, all the pixels within a set being connected to the same track, the sets of pixels being interwoven so that so that any group of n adjacent pixels capable of collecting charge generated by a single input event is connected to a combination of n tracks that is unique to the group of pixels, where n has a value of one of 2, 3 or 4. This allows detection of position of the area of charge collection on the basis of temporally coincident signals on a combination of at least n tracks. | 06-12-2014 |
20140167199 | SYSTEM AND METHOD FOR DIE TO DIE STRESS IMPROVEMENT - A semiconductor wafer having a plurality of chip die areas arranged on a wafer in an array, each chip die area including a seal ring area with one or more first sets of polygonal structures. The wafer further comprises scribe line areas between the chip die areas, the scribe line areas including one or more second sets of polygonal structures. The presence of proximate polygonal structures between the scribe line and seal ring areas balance stresses between the chip die areas during wafer dicing operation. | 06-19-2014 |
20140167200 | PHOTODETECTOR AND METHOD FOR FORMING THE SAME - According to embodiments of the present invention, a photodetector is provided. The photodetector includes a substrate having a first side and a second side opposite to the first side, the substrate being adapted to receive light incident on the photodetector on the first side of the substrate, a plurality of cells formed in the substrate, and at least one trench defined by a first sidewall and a second sidewall, wherein a spacing between the first sidewall and the second sidewall increases in a direction from the first side of the substrate towards the second side, wherein a respective trench of the at least one trench is arranged in between adjacent cells of the plurality of cells. According to further embodiments of the present invention, a method for forming a photodetector is also provided. | 06-19-2014 |
20140175592 | SEMICONDUCTOR IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array. | 06-26-2014 |
20140183684 | PHOTODETECTOR ARRAY AND METHOD OF MANUFACTURE - The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package. | 07-03-2014 |
20140183685 | IMAGE SENSOR - An image sensor arranged inside and on top of a semiconductor substrate, having a plurality of pixels, each including: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; at least one first insulated vertical electrode extending in the substrate between the photosensitive area and the storage area; and at least one second insulated vertical electrode extending in the substrate between the storage area and the read area. | 07-03-2014 |
20140191355 | IMAGE SENSORS WITH MULTIPLE OUTPUT STRUCTURES - In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage. | 07-10-2014 |
20140191356 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus is disclosed in which, in a first unit cell, light is collected to maximize an amount of light received when the light is incident at a first angle-of-incidence, and in a second unit cell adjacent to the first unit cell, light is collected to maximize an amount of light received when the light is incident at a second angle-of-incidence, the amount of light received when the light is incident at a third angle-of-incidence on the first unit cell is equal to the amount of light received when the light is incident at the third angle-of-incidence on the second unit cell, the first angle-of-incidence is greater than the third angle-of-incidence by a predetermined amount, and the second angle-of-incidence is smaller than the third angle-of-incidence by the predetermined amount. | 07-10-2014 |
20140191357 | MULTI-SUBSTRATE IMAGE SENSOR HAVING A DUAL DETECTION FUNCTION - The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned with and bonded to each other to electrically couple the two photodiodes to each other, thereby forming a complete photodiode within one pixel. | 07-10-2014 |
20140203391 | INTEGRATED CIRCUIT INCLUDING A DIRECTIONAL LIGHT SENSOR - An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a directional light sensor. The directional light sensor includes a plurality of photodetectors located on the major surface. The directional light sensor also includes one or more barriers, wherein each barrier is positioned to shade one or more of the photodetectors from light incident upon the integrated circuit from a respective direction. The directional light sensor is operable to determine a direction of light incident upon the integrated circuit by comparing an output signal of at least two of the photodetectors. | 07-24-2014 |
20140231949 | IMAGE SENSOR FOR MITIGATING DARK CURRENT - One or more embodiments of techniques or systems for mitigating dark current of an image sensor are provided herein. Generally, a silicon interface, such as an edge of a dielectric region or an edge between a back side interface (BSI) region and a pass region, is a source of electrons or holes which cause dark current. In some embodiments, the image sensor includes a surface protect region. For example, the surface protect region is doped with a first doping type and a photo-diode of the image sensor is doped with the same first doping type. In this manner, the surface protect region acts as an electron magnet or a hole magnet for electrons or holes from the silicon interface, thus mitigating electrons or holes from the silicon interface from being collected by the photo-diode, for example. | 08-21-2014 |
20140239433 | SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers. | 08-28-2014 |
20140264705 | IMAGING DEVICE - An imaging device includes: a plurality of first absorption layers that absorb an infrared ray with a given wavelength range, and generate pixel signals of a plurality of pixels, respectively; at least one second absorption layer that absorbs an infrared ray with a wavelength range which is different from the given wavelength range of the first absorption layers, and generates a pixel signal common to the pixels; a plurality of first electrodes that take out the pixel signals from the first absorption layers, respectively; and a second electrode that takes out the pixel signal from the at least one second absorption layer. | 09-18-2014 |
20140284751 | Connection Structure of Wiring Cable and Connection Method of Wiring Cable - To provide a connection structure of a wiring cable and a connection method of a wiring cable which enable the downsizing of a head part. The connection structure includes: a semiconductor chip having a plurality of imaging elements formed on a front surface and a plurality of connection pads formed on a rear surface; and a wiring cable in which a plurality of wires are integrally formed and from whose end surface the plural wires are exposed, wherein the plural connection pads of the semiconductor chip and the plural wires exposed from the end surface are connected. | 09-25-2014 |
20140299957 | IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION - An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes. | 10-09-2014 |
20140312450 | Small Size, Weight, and Packaging of Image Sensors - A method and structure of an image sensor device including a read out integrated circuit (ROIC) and a photodiode array (PDA). An embodiment may include a package substrate having a recess and a raised pedestal within the recess; a read out integrated circuit (ROIC) physically attached to the raised pedestal; a photodiode array (PDA) physically attached to the ROIC and electrically coupled therewith; and a printed circuit board (PCB) within the recess in the package substrate, wherein the PCB has an opening therein and the raised pedestal at least partially extends through the opening in the PCB. | 10-23-2014 |
20140312451 | SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A solid-state imaging element includes a pixel having a photoelectric conversion section and a side pinning layer. The photoelectric conversion section is formed in a semiconductor substrate. The side pinning layer is formed on a side of the photoelectric conversion section. The side pinning layer is formed by performing ion implantation in a state of a trench being open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed. | 10-23-2014 |
20140319639 | NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT - An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the first polarity charge layer. | 10-30-2014 |
20140339668 | IMAGING UNIT AND IMAGING APPARATUS - An imaging unit comprising an imaging chip and a mounting substrate that has the imaging chip mounted thereon and includes a first metal layer for outputting a signal generated by the imaging chip to the outside. An imaging apparatus comprises an imaging unit that includes an imaging chip and a mounting substrate that has the imaging chip mounted thereon and includes a first metal layer for outputting a signal generated by the imaging chip to the outside. | 11-20-2014 |
20140346632 | PHOTODETECTOR CIRCUIT - A photodetector circuit is provided that includes: a first wiring connected to an input terminal; a second wiring connected to an output terminal; and first and second photosensors each including a first terminal connected to the first wiring and a second terminal connected to the second wiring, wherein the first wiring and the second wiring are arranged in parallel, and the sum of resistance values of a first path from the input terminal to the output terminal via the first wiring, the first photosensor, and the second wiring is identical to the sum of resistance values of a second path from the input terminal to the output terminal via the first wiring, the second photosensor, and the second wiring. | 11-27-2014 |
20140361394 | Integrated Sensor Chip Package with Directional Light Sensor, Apparatus including such a package and method of manufacturing such an Integrated Sensor Chip package - Disclosed is an integrated sensor chip package comprising an integrated sensor chip enveloped in a packaging layer ( | 12-11-2014 |
20140367822 | SYSTEMS AND METHODS FOR DRY ETCHING A PHOTODETECTOR ARRAY - Systems and methods for dry eteching a photodetector array based on InAsSb are provided. A method for fabricating an array of photodetectors includes receiving a pattern of an array of photodetectors formed from InAsSb, the pattern including at least one trench defined between adjacent photodetectors, and dry etching the at least one trench with a plasma including BrCl | 12-18-2014 |
20140374866 | Photo Sensing Chip Having a Plurality of Photo Sensors and Manufacturing Method Thereof - A photo sensing chip and a manufacturing method thereof are disclosed. The photo sensing chip includes a silicon substrate and a plurality of photo sensors formed on the silicon substrate. The photo sensors include a first photo sensor and a second photo sensor. The first photo sensor has a first P-N junction and a first depletion region is formed at first P-N junction for receiving a first light band of an incident light to generate a first photo current. The second photo sensor has a second P-N junction and a second depletion region is formed at second P-N junction for receiving a second light band of the incident light to generate a second photo current. A first process parameter corresponds to the first depletion region and a second process parameter corresponds to the second depletion region, wherein the first process parameter and the second process parameter are different. | 12-25-2014 |
20140374867 | Pinned Photodiode (PPD) Pixel Architecture With Separate Avalanche Region - Described herein is a pinned photodiode pixel architecture having a p-type substrate that is independently biased with respect to a pixel area to provide an avalanche region between an n-type region and a p-type region formed on the substrate. Such a pinned photodiode pixel can be used in imaging sensors that are used in low light level conditions. | 12-25-2014 |
20150014805 | IMAGE PICKUP MODULE - An image pickup module includes: an image pickup chip including a main surface on which a light-receiving portion of an image pickup device and a plurality of electrodes connected to the light-receiving portion are formed; and a wiring board including flying leads bonded to the respective plurality of electrodes. | 01-15-2015 |
20150035109 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, AND ELECTRONIC EQUIPMENT - The present technology relates to a semiconductor device, a manufacturing method of a semiconductor device, a semiconductor wafer, and electronic equipment, which allow a semiconductor device, in which miniaturization is possible, to be provided. | 02-05-2015 |
20150035110 | PYROELECTRIC ALUMINUM NITRIDE MEMS INFRARED SENSOR WITH SELECTIVE WAVELENGTH INFRARED ABSORBER - A MEMS sensor for detecting electromagnetic waves in a particular frequency range is provided. In a preferred embodiment, the MEMS sensor comprises a bottom substrate layer; a first electrode layer over the substrate layer; a pyroelectric layer over the first electrode layer; and a second electrode layer over the pyroelectric layer; wherein a top electrode layer is patterned with a periodic structure that has a periodicity less than or equal to target infrared wavelength. | 02-05-2015 |
20150048473 | IMAGE PICKUP ELEMENT AND IMAGE PICKUP DEVICE - An image pickup element includes: a photoelectric conversion film provided on a semiconductor substrate and including a chalcopyrite-based compound; an insulating film provided on a light incident surface side of the photoelectric conversion film; and a conductive film provided on the insulating film. | 02-19-2015 |
20150048474 | IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS - A solid-state image pickup unit includes substrate; a red pixel including a red charge storage section; a blue pixel including a blue charge storage section; and a green pixel including a plurality of green charge storage sections, the red charge storage section and the blue charge storage section being provided in the substrate. Then, the plurality of green charge storage sections are arranged in the substrate along a thickness direction of the substrate. | 02-19-2015 |
20150054112 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a dielectric substrate, a solid-state imaging element disposed on the dielectric substrate, and including a photosensitive unit at a portion of a front surface thereof, an adhesive between the dielectric substrate and the solid-state imaging element, connection conductors, a sealant, and an upper package part. The solid-state imaging element includes a photosensitive unit at a portion of a front surface thereof, and is bonded to the dielectric substrate by the adhesive such that the adhesive is in contact with a portion of a rear surface of the solid-state imaging element so as to permit air flow along other portions of the rear surface of the solid-state image element. The connection conductors electrically connect the solid-state imaging element and the dielectric substrate. The upper package part is provided on the front surface of the solid-state imaging element so as to hermetically seal the photosensitive unit. | 02-26-2015 |
20150084149 | RADIATION DETECTOR AND RADIATION DETECTION APPARATUS - A radiation detector according to an embodiment includes: a semiconductor substrate; a light detecting unit provided on a side of a first surface of the semiconductor substrate; a first insulating film provided covering the light detecting unit; a second insulating film covering the first insulating film; a scintillator provided on the second insulating film; an interconnection provided between the first and second insulating films, and connected to the light detecting unit; a first electrode connected to the interconnection through a bottom portion of the first opening; a second electrode provided on a region in the second surface of the semiconductor substrate, the region opposing at least a part of the light detecting unit; a second opening provided in a region surrounding the first electrode and not surrounding the second electrode; and an insulating resin layer covering the first and second electrodes and the first and second openings. | 03-26-2015 |
20150091121 | IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING IMAGE PICKUP ELEMENT, AND ELECTRONIC APPARATUS - An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface. | 04-02-2015 |
20150097259 | CONDUCTIVE VIA STRUCTURE, PACKAGE STRUCTURE, AND PACKAGE OF PHOTOSENSITIVE DEVICE - Conductive plug structures suitable for stacked semiconductor device package is provided, wherein large contact region between the conductive plug structures and the corresponding pads of devices can be achieved, to reduce electrical impedance. Therefore, package structures such as photosensitive device packages using the conductive plug structures have superior electrical performance and reliability. | 04-09-2015 |
20150115386 | Semiconductor Devices, Methods of Manufacturing Thereof, and Image Sensor Devices - Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region. | 04-30-2015 |
20150115387 | METHOD OF MANUFACTURING A DEVICE COMPRISING AN INTEGRATED CIRCUIT AND PHOTOVOLTAIC CELLS - According to one embodiment, the present invention relates to a method for manufacturing a photovoltaic device comprising a photovoltaic cell or a plurality of photovoltaic cells (PV cells) connected to an electronic integrated circuit having at least one electrical contact area. A stack comprising the PV cell(s) is produced separately from the electronic integrated circuit, the electronic integrated circuit is then transferred to said stack comprising the PV cell(s). During this transfer, connection areas carried by the PV cell(s) are brought into contact with matching connection areas carried by the electronic integrated circuit. | 04-30-2015 |
20150123233 | Image Sensor Pickup Region Layout - Embodiments of the present disclosure include an image sensor device and methods of forming the same. An embodiment is an image sensor device including a first plurality of pickup regions in a photosensor array area of a substrate, each of first plurality of pickup regions having a first width and a first length, a second plurality of pickup regions in a periphery area of the substrate, the periphery area along at least one side of the photosensor array area, each of second plurality of pickup regions having a second width and a second length. | 05-07-2015 |
20150123234 | SOLID-STATE IMAGE SENSING APPARATUS AND ELECTRONIC APPARATUS - A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers. | 05-07-2015 |
20150130010 | Dual Pixel-Sized Color Image Sensors And Methods For Manufacturing The Same - A dual pixel-size color image sensor, including an imaging surface, for imaging of incident light, and a plurality of color pixels, each color pixel including (a) four large photosites, including two large first-color photosites sensitive to a first color of the incident light, and (b) four small photosites including two small first-color photosites sensitive to the first color of the incident light. The large and small first-color photosites are arranged such that connected regions of the imaging surface, not associated with large and/or small first-color photosites, are not continuous straight lines. A method for manufacturing a color filter array on an imaging surface of a dual pixel-size image sensor includes forming a first-color coating on first portions of the imaging surface to form large and small first-color photosites sensitive to a first color, wherein connected portions of the imaging surface, different from the first portions, are not continuous straight lines. | 05-14-2015 |
20150130011 | IMAGE SENSOR PACKAGES - An image sensor package may include: a package substrate including a chip attachment area on an upper surface thereof, a pad area having a plurality of pads around the chip attachment area, and a holder attachment area at an outside of the pad area, wherein an upper surface of the holder attachment area is at a lower level than an upper surface of the pad area; an image sensor chip mounted on the chip attachment area of the package substrate; a transparent member above the package substrate and configured to cover the image sensor chip; and a holder on the holder attachment area of the package substrate and configured to fix the transparent member. | 05-14-2015 |
20150137301 | MANUFACTURING METHOD FOR SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE - A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element including a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with at least one through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the one electrode is exposed out of the one through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of embedding a conductive member in the through hole after the third step. | 05-21-2015 |
20150303230 | METHOD FOR MANUFACTURING IMAGE CAPTURING DEVICE AND IMAGE CAPTURING DEVICE - An offset spacer film (OSS) is formed on a side wall surface of a gate electrode (NLGE, PLGE) to cover a region in which a photo diode (PD) is disposed. Next, an extension region (LNLD, LPLD) is formed using the offset spacer film and the like as an implantation mask. Next, process is provided to remove the offset spacer film covering the region in which the photo diode is disposed. Next, a sidewall insulating film (SWI) is formed on the side wall surface of the gate electrode. Next, a source-drain region (HPDF, LPDF, HNDF, LNDF) is formed using the sidewall insulating film and the like as an implantation mask. | 10-22-2015 |
20150303322 | CDHGTE PHOTODIODES ARRAY - A photodiodes array includes a useful layer made of Cd | 10-22-2015 |
20150333091 | IMAGE SENSORS HAVING REDUCED INTERFERENCE BETWEEN PIXELS - An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry. | 11-19-2015 |
20150349001 | SEMICONDUCTOR ISOLATION STRUCTURE AND MANUFACTURING METHOD THEREOF - The present disclosure provides a method for manufacturing a semiconductor isolation structure, including providing a substrate with a top surface; forming a patterned mask over the top surface; forming a trench through the patterned mask in the substrate by a directional etch comprising nitrogen-containing substance, wherein an aspect ratio of the trench is formed to be greater than about 18, and a ratio of a width of a narrowest portion and a width of a widest portion of the isolation region is formed to be greater than about 0.7; and filling the trench with insulating materials. The present disclosure also provides an image sensing device, including a radiation sensing region with a first isolation region separating adjacent radiation detecting units and a peripheral region, wherein an aspect ratio of the first isolation region is greater than about 18. | 12-03-2015 |
20150349151 | ARRAY OF MESA PHOTODIODES WITH AN IMPROVED MTF - An array of mesa photodiodes, including a useful layer of Cd | 12-03-2015 |
20150364516 | IMAGE SENSOR STRUCTURES - An image sensor structure is provided. The image sensor structure includes a substrate including a central area and a peripheral area, a sensing area including a plurality of pixels located at the central area of the substrate, a plurality of bond pads disposed at the peripheral area of the substrate, and an array of protrusions disposed between the bond pads and the sensing area and surrounding the sensing area, wherein a largest distance between any two points of the protrusion under a top view is getting smaller from the peripheral area to the central area. | 12-17-2015 |
20150372047 | PHOTODIODE ARRAY HAVING A CHARGE-ABSORBING DOPED REGION - The invention concerns a photodiode array, and the method for producing same, comprising—a cathode comprising at least one substrate layer ( | 12-24-2015 |
20160020241 | LOW NOISE CDHGTE PHOTODIODE ARRAY - A planar photodiode array including a useful layer made of Cd | 01-21-2016 |
20160020247 | SOLID-STATE IMAGE SENSOR, MANUFACTURING METHOD, AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including a substrate including a photoelectric conversion element that generates an electric charge according to a light amount of an incoming light and accumulates the electric charge inside, an electric charge retaining region that retains the electric charge accumulated by the photoelectric conversion element, and a transfer path that transfers the electric charge accumulated by the photoelectric conversion element to the electric charge retaining region. The photoelectric conversion element, the electric charge retaining region, and the transfer path are located in a perpendicular direction to the substrate. | 01-21-2016 |
20160049435 | WAFER ON WAFER STACK METHOD OF FORMING AND METHOD OF USING THE SAME - A wafer on wafer (WOW) stack includes a first wafer having dies of a first type. The WOW stack further includes a second wafer bonded to the first wafer. The second wafer has dies of a second type. An integer number of dies of the second type are bonded to a corresponding die of the first type. A total area of the dies of the second type bonded to the corresponding die of the first type is less than or equal to an area of the corresponding die of the first type. A functionality of the dies of the first type is different from a functionality of the dies of the second type. | 02-18-2016 |
20160064439 | SEMICONDUCTOR AND OPTOELECTRONIC METHODS and DEVICES - A method for processing a semiconductor wafer, the method including: providing a semiconductor wafer including an image sensor pixels layer including a plurality of image sensor pixels, the layer overlaying a wafer substrate; and then bonding the semiconductor wafer to a carrier wafer; and then cutting off a substantial portion of the wafer substrate, and then processing the substantial portion of the wafer substrate for reuse. | 03-03-2016 |
20160071897 | SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND IMAGING DEVICE - A semiconductor device includes a first substrate, a second substrate, a connection part, and an alignment mark. The connection part includes a first electrode which is disposed on the first substrate, a second electrode which is disposed on the second substrate, and a connection bump which connects the first electrode and the second electrode. The alignment mark includes a first mark which is disposed on the first substrate and a second mark which is disposed on the second substrate. A sum of a height of the first mark and a height of the second mark is substantially equal to a sum of a height of the first electrode, a height of the second electrode, and a height of the connection bump. | 03-10-2016 |
20160086996 | Dual-Side Illumination Image Sensor Chips and Methods for Forming the Same - A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction. | 03-24-2016 |
20160093656 | IMAGE SENSOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An image sensor device includes a top substrate and a subassembly. The top substrate includes a plurality of connection pillars, and the subassembly includes a plurality of connection pads. The connection pillars on the top substrate are bonded to the connection pads in the subassembly. The connection pillars are formed of a first metal and the connection pads are formed of a second metal. | 03-31-2016 |
20160141319 | SOLID STATE IMAGING DEVICE - A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential. | 05-19-2016 |
20160181453 | PHOTODETECTOR CELL AND SOLAR PANEL WITH DUAL METAL CONTACTS AND RELATED METHODS | 06-23-2016 |
20190148439 | IMAGE SENSORS | 05-16-2019 |