Entries |
Document | Title | Date |
20080283876 | Noise detection circuit - Noise occurring in a circuit is more accurately detected. A low-pass filter ( | 11-20-2008 |
20080283877 | Strained-channel transistor device - Semiconductor device comprising at least:
| 11-20-2008 |
20080296631 | METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND METHOD OF FORMING THE SAME - A method of forming a metal-oxide-semiconductor (MOS) transistor device is disclosed. A semiconductor substrate is prepared first, and the semiconductor substrate has a gate structure, a source region and a drain region. Subsequently, a stress buffer layer is formed on the semiconductor substrate, and covers the gate structure, the source region and the drain region. Thereafter, a stressed cap layer is formed on the stress buffer layer, and a tensile stress value of the stressed cap layer is higher than a tensile stress value of the stress buffer layer. Since the stress buffer layer can prevent the stressed cap layer from breaking, the MOS transistor device can be covered by a stressed cap layer having an extremely high tensile stress value in the present invention. | 12-04-2008 |
20090114954 | Method of Forming a Device by Removing a Conductive Layer of a Wafer - A method of forming a MEMS device provides a wafer having a base with a conductive portion. The wafer also has an intermediate conductive layer. After it provides the wafer, the method adds a diaphragm layer to the wafer. The method removes at least a portion of the intermediate conductive layer to form a cavity between the diaphragm layer and the base. At least a portion of the diaphragm layer is movable relative to the base. After it forms the cavity, the method seals the cavity. | 05-07-2009 |
20090127590 | MICRO ELECTRO MECHANICAL DEVICE, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A micro electro mechanical device includes: a semiconductor layer; a source/drain region formed on both sides of a channel region within the semiconductor layer; a gate insulating film formed on the semiconductor layer; a cavity formed on the gate insulating film; and a gate electrode formed on the cavity, the gate electrode being movable so as to contact with the gate insulating film. In the device, a pressure applied on the gate electrode is detected by a contact area of the gate electrode and the gate insulating film. | 05-21-2009 |
20090179233 | MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) DEVICE - The present invention provides a MEMS device, be implemented on many MEMS device, such as MEMS microphone, MEMS speaker, MEMS accelerometer, MEMS gyroscope. The MEMS device includes a substrate. A dielectric structural layer is disposed over the substrate, wherein the dielectric structural layer has an opening to expose the substrate. A diaphragm layer is disposed over the dielectric structural layer, wherein the diaphragm layer covers the opening of the dielectric structural layer to form a chamber. A conductive electrode structure is adapted in the diaphragm layer and the substrate to store nonvolatile charges. | 07-16-2009 |
20090242940 | SENSOR DEVICE AND FABRICATION METHOD FOR THE SAME - The sensor device includes: a converter body made of silicon in the shape of a rhombus in plan, the converter body having an opening in the shape of a hexagon in plan; a substrate for holding the converter body; a movable film formed on the opening; a converter electrode formed on the converter body; and a substrate electrode formed on the substrate, the substrate electrode being electrically connected with the converter electrode. The opening is placed so that four of the six sides of the hexagon extend along the four sides of the rhombus of the converter body. | 10-01-2009 |
20090250729 | CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER AND MANUFACTURING METHOD - The integrated circuit/transducer device of the preferred embodiment includes a substrate, a complementary-metal-oxide-semiconductor (CMOS) circuit that is fabricated on the substrate, and a capacitive micromachined ultrasonic transducer (cMUT) element that is also fabricated on the substrate. The CMOS circuit and cMUT element are fabricated during the same foundry process and are connected. The cMUT includes a lower electrode, an upper electrode, a membrane structure that support the upper electrode, and a cavity between the upper electrode and lower electrode. | 10-08-2009 |
20090261387 | CMOS integrated process for fabricating monocrystalline silicon micromechanical elements by porous silicon micromachining - The invention relates to a process for fabricating a monocrystalline Si-micromechanical element integrated with a CMOS circuit element within the CMOS technology, wherein a domain of second conducting property is formed within a substrate of first conducting property, here the second conducting property is reverse with respect to the first conducting property, then simultaneously with or immediately after this a domain of monocrystalline Si is formed within the substrate for fabricating a micromechanical element. After this, a CMOS circuit element is fabricated within the substrate through the known steps of CMOS technology and then the circuit element, as well as a portion of said domain for fabricating the micromechanical element that will carry the micromechanical element after its fabrication are covered with a protecting layer. Then by starting a front-side isotropic porous Si-etching from the exposed surface of said domain for fabricating the micromechanical element and by continuing the etching until said portion that will carry the micromechanical element after its fabrication becomes at least in its full extent underetched, a porous Si sacrificial layer is created which at least partially encloses said portion that will carry the micromechanical element after its fabrication. As a next step, the exposed surface of said porous Si sacrificial layer is passivated by applying a metallic thin film thereon and metallic contact pieces of the circuit element through the known steps of CMOS technology are formed. Finally, the metallic thin film that covers the exposed surface of the porous Si sacrificial layer is removed and the micromechanical element is formed by chemically dissolving said porous Si sacrificial layer. | 10-22-2009 |
20090321793 | DEVICE SENSITIVE TO A MOVEMENT COMPRISING AT LEAST ONE TRANSISTOR - The invention relates to a detection device using at least one transistor ( | 12-31-2009 |
20100117124 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes: a semiconductor substrate; a source region formed in a top layer portion of the semiconductor substrate; a drain region formed in the top layer portion of the semiconductor substrate and spaced apart from the source region; a gate electrode formed on the semiconductor substrate and opposing to an interval between the source region and the drain region; a wiring formed on the semiconductor substrate and connected to the source region, the drain region, or the gate electrode; and a MEMS sensor disposed on the semiconductor substrate. The MEMS sensor includes: a thin film first electrode made of the same material as the gate electrode and formed in the same layer as the gate electrode; and a second electrode made of the same material as the wiring, formed in the same layer as the wiring, and spaced apart from the first electrode at a side opposite to the semiconductor substrate side of the first electrode. | 05-13-2010 |
20100140669 | MICROFABRICATION METHODS FOR FORMING ROBUST ISOLATION AND PACKAGING - Exemplary embodiments provide an electrical single-crystal silicon (SCS) isolation device and a method for manufacturing the SCS isolation device. The isolation device can include a trench isolation structure formed using a trench having sidewall dielectrics and a follow-up filling of a metal or a polymer that is conductive or nonconductive. In an exemplary embodiment, metals such as a copper can be electroplated to fill the trench to provide robust mechanical support and a thermal conducting path for subsequent fabrication processes. In addition, exemplary embodiments provide a CMOS compatible process for self-packaging the disclosed isolation device or other devices from CMOS processing. In an exemplary embodiment, a backside packaging can be performed on a structured substrate prior to fabricating the active structures from the front side. Following the formation of the active structures (e.g., movable micro-sensors), a front-side packaging can be performed using bonding pads to complete the disclosed self-packaging process. | 06-10-2010 |
20100140670 | INTEGRATION OF MEMS AND CMOS DEVICES ON A CHIP - A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer. | 06-10-2010 |
20100171153 | METHOD AND STRUCTURE OF MONOLITHICALLY INTEGRATED PRESSURE SENSOR USING IC FOUNDRY-COMPATIBLE PROCESSES - A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost. | 07-08-2010 |
20100270596 | MEMS SENSOR, METHOD OF MANUFACTURING MEMS SENSOR, AND ELECTRONIC APPARATUS - A MEMS sensor includes: a substrate; a fixed electrode portion formed in the substrate; a movable weight portion formed above the fixed electrode portion via a gap; a movable electrode portion formed in the movable weight portion and disposed so as to face the fixed electrode portion; a supporting portion; and a connecting portion that couples the supporting portion with the movable weight portion and is elastically deformable, wherein the movable weight portion is a stacked structure having conductive layers and an insulating layer, and plugs having a larger specific gravity than the insulating layer are embedded in the insulating layer. | 10-28-2010 |
20100283088 | SUBSTRATE-LEVEL INTERCONNECTION AND MICRO-ELECTRO-MECHANICAL SYSTEM - A micro-electro mechanical system (MEMS) is disclosed, which comprises a substrate; at least one transistor formed on the substrate and electrically connected with a contact plug; at least one MEMS device; and a local interconnection line at the same level of the contact plug, through which the MEMS device is coupled to the transistor. | 11-11-2010 |
20100289065 | MEMS INTEGRATED CHIP WITH CROSS-AREA INTERCONNECTION - The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area. | 11-18-2010 |
20100289066 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device is disclosed. The semiconductor device includes: a first electrode, disposed over a first region of a substrate; and a conductive layer, disposed over the substrate, including a second electrode disposed above the first electrode, wherein the second electrode comprises a mesh main part having a plurality of openings, and a plurality of extending parts, wherein the extending parts are connected to the mesh main part at periphery of the openings and extend toward a surface of the first electrode. | 11-18-2010 |
20100314669 | CAPACITIVE MEMS SWITCH AND METHOD OF FABRICATING THE SAME - The present invention discloses a capacitive MEMS switch on top of a semiconductor substrate containing a CMOS driving circuitry. The capacitive MEMS switch disclosed includes: 1) a semiconductor substrate containing a driving circuitry inside, and first and second conductors as well as a bottom electrode on top; 2) a suspended composite beam above and anchored onto the semiconductor substrate, containing a top electrode aligned to the bottom electrode with a first vertical distance, a top conductor, capped by a dielectric layer, having a first and second contact tips aligned with the first and second bottom conductors with a second vertical distance differentially smaller than the first vertical distance. The electrostatic attraction generated between the top electrode and the bottom electrode pulls the first and second contact tips in physical contact with and electrically connects the first and second bottom conductors through the top conductor. | 12-16-2010 |
20110049578 | ELECTRIC COMPONENT AND METHOD OF MANUFACTURING THE ELECTRIC COMPONENT - According to one embodiment, an electric component includes: a first insulating layer formed on a first wire; a second wire and a functional element formed on the first insulating layer; a second insulating layer formed on the first insulating layer; and a connection wire that connects the second wire and the first wire. In the connection wire, a first via, a second via, and an inter-via wire are integrally formed of the same material. The first via is formed in the second insulating layer. The second via is formed in the first and second insulating layers. | 03-03-2011 |
20110049579 | THIN-FILM TRANSISTOR BASED PIEZOELECTRIC STRAIN SENSOR AND METHOD - A piezoelectric strain sensor and method thereof for detecting strain, vibration, and/or pressure. The sensor incorporates a sequence of piezoelectric and semiconductor layers in a thin-film transistor structure. The thin-film transistor structure can be configured on a flexible substrate via a low-cost fabrication technique. The piezoelectric layer generates an electric charge resulting in a modulation of a transistor current, which is a measure of external strain. The sensor can be formed as a single gate field-effect piezoelectric sensor and a dual gate field-effect piezoelectric sensor. The semiconductor layer can be configured from a nanowire array resulting in a metal-piezoelectric-nanowire field effect transistor. The single and dual gate field-effect piezoelectric sensor offer increased sensitivity and device control due to the presence of the piezoelectric layer in the transistor structure and low cost manufacturability on large area flexible substrates. | 03-03-2011 |
20110057236 | Inertial sensor having a field effect transistor - An inertial sensor, having a field effect transistor which includes a gate electrode ( | 03-10-2011 |
20110068374 | INTEGRATED CIRCUIT HAVING MICROELECTROMECHANICAL SYSTEM DEVICE AND METHOD OF FABRICATING THE SAME - An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect. | 03-24-2011 |
20110133256 | CMOS-MEMS Cantilever Structure - The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in the sensor unit area with one end floating above the substrate and the other end connecting to the circuit structure. With the above arrangement, the manufacturing process of CMOS-MEMS cantilever structure of this invention can be simplified. Furthermore, the structure of the cantilever beam is thinned down and therefore has a higher sensitivity. | 06-09-2011 |
20110156106 | HERMETIC MEMS DEVICE AND METHOD FOR FABRICATING HERMETIC MEMS DEVICE AND PACKAGE STRUCTURE OF MEMS DEVICE - A hermetic microelectromechanical system (MEMS) package includes a CMOS MEMS chip and a second substrate. The CMOS MEMS Chip has a first substrate, a structural dielectric layer, a CMOS circuit and a MEMS structure. The structural dielectric layer is disposed on a first side of the first structural substrate. The structural dielectric layer has an interconnect structure for electrical interconnection and also has a protection structure layer. The first structural substrate has at least a hole. The hole is under the protection structure layer to form at least a chamber. The chamber is exposed to the environment in the second side of the first structural substrate. The chamber also comprises a MEMS structure. The second substrate is adhered to a second side of the first substrate over the chamber to form a hermetic space and the MEMS structure is within the space. | 06-30-2011 |
20110233621 | Wafer Level Packaging Bond - The present disclosure provides a method of bonding a plurality of substrates. In an embodiment, a first substrate includes a first bonding layer. The second substrate includes a second bonding layer. The first bonding layer includes silicon; the second bonding layer includes aluminum. The first substrate and the second substrate are bonded forming a bond region having an interface between the first bonding layer and the second bonding layer. A device having a bonding region between substrates is also provided. The bonding region includes an interface between a layer including silicon and a layer including aluminum. | 09-29-2011 |
20110309415 | SENSOR USING FERROELECTRIC FIELD-EFFECT TRANSISTOR - An embodiment is a method and apparatus to sense strain or pressure. A ferroelectric field effect transistor (feFET) structure has a semiconductor layer and a ferroelectric dielectric layer. The feFET structure is capable of sensing strain or pressure. | 12-22-2011 |
20120007150 | INTEGRATED DEVICE OF THE TYPE COMPRISING AT LEAST A MICROFLUIDIC SYSTEM AND FURTHER CIRCUITRY AND CORRESPONDING INTEGRATION PROCESS - An embodiment relates to a device integrated on a semiconductor substrate of a type comprising at least one first portion for the integration of at least one microfluidic system, and a second portion for the integration of an additional circuitry. The microfluidic system comprises at least one cavity realized in a containment layer of the integrated device closed on top by at least one portion of a polysilicon layer, this polysilicon layer being a thin layer shared by the additional circuitry and the closing portion of the cavity realizing a piezoresistive membrane for the microfluidic system. | 01-12-2012 |
20120025277 | MEASURING ELEMENT - A measuring element for recording a deflection includes a region which is situated on a semi-conductor substrate and an electrode for influencing a conductivity of the region, the electrode being mounted deflectably in relation to the region, in such a way that an overlap region is formed between the electrode and the region, the overlap region having a dimension that is variable with a deflection of the electrode. A change in the output signal of the measuring element is a function of the conductivity of the region and is controllable by a change in the dimension of the overlap region, the change in the dimension of the overlap region having a non-linear relationship with the deflection of the electrode so that a change in the output signal of the measuring element has a non-linear relationship with the deflection of the electrode. | 02-02-2012 |
20120061734 | Micro-Electromechanical System Devices - Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer. | 03-15-2012 |
20120080727 | MICRO ELECTRO MECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF - A micro structure and an electric circuit included in a micro electro mechanical device are manufactured over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes layers formed of the same insulating film as the gate insulating layer and the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer. | 04-05-2012 |
20120193684 | Ultrananocrystalline Diamond Films with Optimized Dielectric Properties for Advanced RF MEMS Capacitive Switches - An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems. | 08-02-2012 |
20120193685 | RF-MEMS Capacitive Switches With High Reliability - A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles. | 08-02-2012 |
20120211805 | CAVITY STRUCTURES FOR MEMS DEVICES - Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective. | 08-23-2012 |
20120241822 | SEMICONDUCTOR DEVICE, DISTORTION GAUGE, PRESSURE SENSOR, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device may include a piezoresistive body of which a resistance value is changed by action of an external force. The piezoresistive body may include a surface layer of diamond. The surface layer may be hydrogen-terminated. | 09-27-2012 |
20120248506 | METHOD AND STRUCTURE OF MONOLITHETICALLY INTEGRATED INERTIAL SENSOR USING IC FOUNDRY-COMPATIBLE PROCESSES - The present invention relates to integrating an inertial mechanical device on top of a CMOS substrate monolithically using IC-foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A thick silicon layer is added on top of the CMOS. A subsequent patterning step defines a mechanical structure for inertial sensing. Finally, the mechanical device is encapsulated by a thick insulating layer at the wafer level. | 10-04-2012 |
20120256237 | EMBEDDED MEMS SENSORS AND RELATED METHODS - Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein. | 10-11-2012 |
20120319174 | CMOS COMPATIBLE MEMS MICROPHONE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a CMOS compatible MEMS microphone, comprising: an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including CMOS passivation layers with a metal layer sandwiched and a plurality of through holes, provided above the silicon device layer, wherein the plurality of through holes are formed in the portions thereof opposite to the microphone diaphragm, and the metal layer forms an electrode plate of the backplate; a plurality of dimples protruding from the lower surface of the microphone backplate opposite to the diaphragm; and an air gap, provided between the diaphragm and the microphone backplate, wherein a spacer forming a boundary of the air gap is provided outside of the diaphragm or on the edge of the diaphragm; wherein a back hole is formed to be open in substrate underneath the diaphragm so as to allow sound pass through, and the microphone diaphragm is used as an electrode plate to form a variable capacitive sensing element with the electrode plate of the microphone backplate. | 12-20-2012 |
20130032861 | TOUCH PANEL AND METHOD FOR MANUFACTURING THE SAME - A touch panel includes a first substrate having a plurality of lower electrodes; a second substrate spaced a distance apart from the lower substrate and having a plurality of upper electrodes that correspond to the lower electrodes; a conductive rubber layer interposed between the lower electrodes and the upper electrodes; and a plurality of organic transistors interposed between the lower electrodes and the upper electrodes and to be connected to a top or bottom portion of the conductive rubber layer. | 02-07-2013 |
20130043510 | STRUCTURE AND METHOD FOR MOTION SENSOR - The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor. | 02-21-2013 |
20130099292 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor substrate of a semiconductor device has a sensor region and an integrated circuit region, and a cavity is formed immediately under a surface layer portion of the sensor region. A capacitive acceleration sensor is formed on the sensor region by working a surface layer portion of the semiconductor substrate opposed to the cavity. The capacitive acceleration sensor includes an interdigital fixed electrode and an interdigital movable electrode. A CMIS transistor is formed on the integrated circuit region. The CMIS transistor includes a P-type well region and an N-type well region formed on the surface layer portion of the semiconductor substrate. A gate electrode is opposed to the respective ones of the P-type well region and the N-type well region through a gate insulating film formed on a surface of the semiconductor substrate. | 04-25-2013 |
20130119441 | MICROELECTRONIC DEVICE AND MEMS PACKAGE STRUCTURE AND FABRICATING METHOD THEREOF - A microelectronic device including a substrate, at least a semi-conductor element, an anti metal ion layer, a non-doping oxide layer and a MEMS structure is provided. The substrate has a CMOS circuit region and a MEMS region. The semi-conductor element is configured within the CMOS circuit region of the substrate. The anti metal ion layer is disposed within the CMOS circuit region of the substrate and covers the semi-conductor element. The non-doping oxide layer is disposed on the substrate within the MEMS region. The MEMS structure is partially suspended above the non-doping oxide layer. The present invention also provides a MEMS package structure and a fabricating method thereof. | 05-16-2013 |
20130126948 | METHOD FOR PRODUCING A MICROELECTROMECHANICAL DEVICE AND MICROELECTROMECHANICAL DEVICE - In a method for producing a micro-electromechanical device in a material substrate, component element defining the position of an electronic component and/or required for the function of the electronic component is selectively formed on the material substrate from an etching stop material acting as an etching stop in case of etching of the material substrate and/or in case of etching of a material layer disposed on the material substrate. When the component element of the electronic component is implemented, a bounding region is also formed on the material substrate along at least a partial section of an edge of the surface structure, wherein the bounding region bounds the partial section. The material substrate thus implemented is selectively etched for forming the surface structure, in that the edge of the bounding region defines the position of the surface structure to be implemented on the material substrate. | 05-23-2013 |
20130140611 | PRESSURE SENSOR HAVING NANOSTRUCTURE AND MANUFACTURING METHOD THEREOF - The present disclosure relates to a pressure sensor having a nanostructure and a method for manufacturing the same. More particularly, it relates to a pressure sensor having a nanostructure attached on the surface of the pressure sensor and thus having improved sensor response time and sensitivity and a method for manufacturing the same. The pressure sensor according to the present disclosure having a nanostructure includes: a substrate; a source electrode and a drain electrode arranged on the substrate with a predetermined spacing; a flexible sensor layer disposed on the source electrode and the drain electrode; and a nanostructure attached on the surface of the flexible sensor layer and having nanosized wrinkles. | 06-06-2013 |
20130146948 | MICROMECHANICAL DEVICE AND METHODS TO FABRICATE SAME USING HARD MASK RESISTANT TO STRUCTURE RELEASE ETCH - A structure includes a silicon layer disposed on a buried oxide layer that is disposed on a substrate; at least one transistor device formed on or in the silicon layer, the at least one transistor having metallization; a released region of the silicon layer disposed over a cavity in the buried oxide layer; a back end of line (BEOL) dielectric film stack overlying the silicon layer and the at least one transistor device; a nitride layer overlying the BEOL dielectric film stack; a hard mask formed as a layer of hafnium oxide overlying the nitride layer; and an opening made through the layer of hafnium oxide, the layer of nitride and the BEOL dielectric film stack to expose the released region of the silicon layer disposed over the cavity in the buried oxide layer. The hard mask protects the underlying material during a MEMS/NEMS HF vapor release procedure. | 06-13-2013 |
20130153970 | TRANSISTOR STRUCTURE, METHOD FOR MANUFACTURING A TRANSISTOR STRUCTURE, FORCE-MEASURING SYSTEM - A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force. | 06-20-2013 |
20130161702 | INTEGRATED MEMS DEVICE - An integrated MEMS device is provided, including, from bottom up, a bonding wafer layer, a bonding layer, an aluminum layer, a CMOS substrate layer defining a large back chamber area (LBCA), a small back chamber area (SBCA) and a sound damping path (SDP), a set of CMOS wells, a field oxide (FOX) layer, a set of CMOS transistor sources/drains, a first polysilicon layer forming CMOS transistor gates, a second polysilicon layer, said CMOS wells, said CMOS transistor sources/drains and said CMOS gates forming CMOS transistors, an oxide layer embedded with a plurality of metal layers interleaved with a plurality of via hole layers, and a gap control layer, an oxide layer, a first Nitride deposition layer, a metal deposition layer, a second Nitride deposition layer, an under bump metal (UBM) layer made of preferably Al/NiV/Cu and a plurality of solder spheres. | 06-27-2013 |
20130161703 | SENSOR ELEMENT ARRAY AND METHOD OF FABRICATING THE SAME - A sensor element array and method of fabricating the same are provided. The sensor element array is disposed on a substrate and includes a first patterned conductive layer, a channel layer, a first insulation layer, a second patterned conductive layer, a second insulation layer, and a third patterned conductive layer. The first patterned conductive layer includes a sensing line, a first power line, a source/drain pattern and a branch pattern. The channel layer includes a first channel and a second channel. Margins of the first insulation layer and the second patterned conductive layer are substantially overlapped. The second patterned conductive layer includes a selecting line, a gate pattern, and a gate connecting pattern. The second insulation layer has a first connecting opening for exposing the gate connecting pattern. The third patterned conductive layer includes a sensing electrode electrically connected to the gate connecting pattern. | 06-27-2013 |
20130168740 | INTEGRATED COMPACT MEMS DEVICE WITH DEEP TRENCH CONTACTS - A compact MEMS motion sensor device is provided, including a CMOS substrate layer, with plural anchor posts having an isolation oxide layer surrounding a conductive layer. On one side of CMOS substrate layer, the device further includes a field oxide (FOX) layer, a first set and a second set of implant doped silicon areas, a first polysilicon layer, an oxide layer embedded with plural metal layers interleaved with via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. On the other side of CMOS substrate layer, the present invention further includes a backside interconnect isolation oxide layer, a first MEMS bonding layer, a first metal compound layer, a second MEMS bonding layer, a MEMS layer, a first MEMS eutectic bonding layer, a second metal compound layer, a second MEMS eutectic bonding layer, and a MEMS cap layer. | 07-04-2013 |
20130187201 | Sensor Device and Method - A sensor device includes a semiconductor chip. The semiconductor chip has a sensing region sensitive to mechanical loading. A pillar is mechanically coupled to the sensing region. | 07-25-2013 |
20130200439 | MICRO-ELECTROMECHANICAL SEMICONDUCTOR COMPONENT - A micro-electromechanical semiconductor component is provided with a semiconductor substrate, a reversibly deformable bending element made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses. The transistor is designed as an integrated component in the bending element. | 08-08-2013 |
20130221411 | MICROMECHANICAL SENSOR APPARATUS WITH A MOVABLE GATE, AND CORRESPONDING PRODUCTION PROCESS - A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard region is provided in the substrate at least on the longitudinal sides of the channel region and has a second doping type which is the same as the first doping type and has a higher doping concentration. | 08-29-2013 |
20130285122 | ELECTRONIC DEVICE - According to one embodiment, an electronic device includes a drive circuit on a semiconductor substrate, an insulating region including a first insulating part provided on the semiconductor substrate and formed of interlayer insulating films, and a second insulating part provided on the first insulating part, an element for a high-frequency provided on the insulating region and driven by the drive circuit, an interconnect including a first conductive part in the first insulating part, and a second conductive part in the second insulating part, and transmitting a drive signal from the drive circuit to the element, a first shield provided inside the insulating region and below the element, and a second shield provided inside the insulating region and below the second conductive part. | 10-31-2013 |
20130307030 | MICRO ELECTRO MECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF - To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer. | 11-21-2013 |
20130328109 | STRUCTURES AND METHODS FOR ELECTRICALLY AND MECHANICALLY LINKED MONOLITHICALLY INTEGRATED TRANSISTOR AND MEMS/NEMS DEVICES - A device including a NEMS/MEMS machine(s) and associated electrical circuitry. The circuitry includes at least one transistor, preferably JFET, that is used to: (i) actuate the NEMS/MEMS machine; and/or (ii) receive feedback from the operation of the NEMS/MEMS machine The transistor (e.g., the JFET) and the NEMS/MEMS machine are monolithically integrated for enhanced signal transduction and signal processing. Monolithic integration is preferred to hybrid integration (e.g., integration using wire bonds, flip chip contact bonds or the like) due to reduce parasitics and mismatches. In one embodiment, the JFET is integrated directly into a MEMS machine, that is in the form of a SOI MEMS cantilever, to form an extra-tight integration between sensing and electronic integration. When a cantilever connected to the JFET is electrostatically actuated; its motion directly affects the current in the JFET through monolithically integrated conduction paths (e.g., traces, vias, etc.) In one embodiment, devices according to the present invention were realized in 2?m thick SOI cross-wire beams, with a MoSi2 contact metallization for stress minimization and ohmic contact. In this embodiment, the pull-in voltage for the MEMS cantilever was 21V and the pinch-off voltage of the JFET was −19V. | 12-12-2013 |
20140042497 | SEMICONDUCTOR PHYSICAL QUANTITY SENSOR AND METHOD FOR MANUFACTURING THE SAME - A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode. | 02-13-2014 |
20140042498 | STARTING SUBSTRATE FOR SEMICONDUCTOR ENGINEERING HAVING SUBSTRATE-THROUGH CONNECTIONS AND A METHOD FOR MAKING SAME - A substrate-through electrical connection ( | 02-13-2014 |
20140048854 | In-Cell Touch Panel - An embodiment of the disclosure discloses an in-cell touch panel having advantages such as a simple structure and a low cost. The in-cell touch panel comprises: a first substrate and a second substrate arranged oppositely, wherein a plurality of gate lines arranged horizontally are formed on the first substrate; the in-cell touch panel further comprises: a plurality of touch driving lines arranged horizontally; a plurality of touch sensing lines arranged vertically; and a plurality of touch scanning TFTs, wherein each touch scanning TFT has a gate connected to one gate line, a source connected to a touch driving circuit, and a drain connected to one touch driving line, the one gate line is only connected to the gate of one touch scanning TFT; wherein, the number of the gate lines≧the number of the touch scanning TFTs≧the number of the touch driving lines. | 02-20-2014 |
20140054652 | STIMULATED PHONON EMISSION DEVICE AND OSCILLATOR, FREQUENCY FILTER, COOLING DEVICE, LIGHT-RECEIVING DEVICE, AND LIGHT-EMITTING DEVICE COMPRISING THE STIMULATED PHONON EMISSION DEVICE - A stimulated phonon emission device of an embodiment is provided with a first electroconductive type of semiconductor substrate of an indirect transition type semiconductor crystal, a second electroconductive type of well region provided in the semiconductor substrate, an element isolation region deeper than the well region, an element region surrounded by the element isolation region, and a field-effect transistor having a plurality of gate electrodes which are formed in the well region in the element region, are parallel to each other, and are arranged at a constant pitch and first electroconductive type of source region and drain region provided in the element regions on the both sides of the gate electrode. | 02-27-2014 |
20140061730 | Cap and Substrate Electrical Connection at Wafer Level - A cap and substrate having an electrical connection at a wafer level includes providing a substrate and forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate. An electrically conductive path to the ground structure is formed in the substrate. A top cap is then provided, wherein the top cap includes an electrically conductive surface. The top cap is bonded to the substrate so that the electrically conductive surface of the top cap is electrically coupled to the path to the ground structure. | 03-06-2014 |
20140077272 | MICROMECHANICAL SENSOR DEVICE WITH MOVABLE GATE AND CORRESPONDING PRODUCTION METHOD - A micromechanical sensor device with a movable gate includes a field effect transistor having a drain region, a source region, a channel region arranged between the field effect transistor and the source region and including a first doping type, and a movable gate. The movable gate is separated from the channel region by an interspace. The drain region, the source region, and the channel region are arranged in a substrate. An oxide region is provided in the substrate at least at longitudinal sides of the channel region. | 03-20-2014 |
20140077273 | MECHANICAL MEMORY TRANSISTOR - A mechanical memory transistor includes a substrate having formed thereon a source region and a drain region. An oxide is formed upon a portion of the source region and upon a portion of the drain region. A pull up electrode is positioned above the substrate such that a gap is formed between the pull up electrode and the substrate. A movable gate has a first position and a second position. The movable gate is located in the gap between the pull up electrode and the substrate. The movable gate is in contact with the pull up electrode when the movable gate is in a first position and is in contact with the oxide to form a gate region when the movable gate is in the second position. The movable gate, in conjunction with the source region and the drain region and when the movable gate is in the second position, form a transistor that can be utilized as a non-volatile memory element. | 03-20-2014 |
20140084349 | Microelectronic Component and Corresponding Production Process - A microelectronic component includes a semiconductor substrate having a top side and a reverse side, an elastically movable mass device on the top side of the substrate, at least one source region provided in or on the mass device, at least one drain region provided in or on the mass device, and a gate region suspended on a conductor track arrangement above the at least one source region and at least one drain region and spaced apart from the mass device by a gap. The conductor track arrangement is anchored on the top side of the substrate in a periphery of the mass device such that the gate region remains fixed when the mass device has been moved. | 03-27-2014 |
20140145244 | MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS - MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer. | 05-29-2014 |
20140159122 | SEMICONDUCTOR PRESSURE SENSOR AND FABRICATION METHOD THEREOF - At a pressure sensor region, a pressure sensor including a fixed electrode, a void and a movable electrode is formed. At a CMOS region, a memory cell transistor and a field effect transistor are formed. An etching hole communicating with the void is closed by a first sealing film. The void is formed by removing a region of a film identical to the film of a gate electrode of the memory cell transistor. The movable electrode is formed of a film identical to the film of a gate electrode. | 06-12-2014 |
20140175525 | CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer - A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer. | 06-26-2014 |
20140217478 | CMOS ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS - CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided. | 08-07-2014 |
20140239352 | CMOS COMPATIBLE SILICON DIFFERENTIAL CONDENSER MICROPHONE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a CMOS compatible silicon differential condenser microphone and a method of manufacturing the same. Said microphone comprises a silicon substrate, wherein a CMOS circuitry is accommodated thereon; a first rigid conductive perforated backplate supported on the silicon substrate with an insulating layer inserted therebetween; a second rigid perforated backplate formed above the first backplate, including CMOS passivation layers and a metal layer sandwiched between the CMOS passivation layers as an electrode plate of the second plate, wherein an air gap, with a spacer forming its boundary, is provided between the opposite perforated areas of the first backplate and the second backplate; a compliant diaphragm provided between the first backplate and the second backplate, wherein a back hole is formed to be open in the silicon substrate underneath the first backplate so as to allow sound pass through, and the diaphragm and the first backplate form a first variable condenser, the diaphragm and the second backplate form a second variable condenser, and the first variable condenser and the second variable condenser form differential condensers. | 08-28-2014 |
20140239353 | METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT - A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer. | 08-28-2014 |
20140246708 | MEMS Structures and Methods of Forming the Same - An integrated circuit device includes a first layer comprising at least two partial cavities, an intermediate layer bonded to the first layer, the intermediate layer formed to support at least two Micro-electromechanical System (MEMS) devices, and a second layer bonded to the intermediate layer, the second layer comprising at least two partial cavities to complete the at least two partial cavities of the first layer through the intermediate layer to form at least two sealed full cavities. The at least two full cavities have different pressures within. | 09-04-2014 |
20140252422 | CAVITY STRUCTURES FOR MEMS DEVICES - Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective. | 09-11-2014 |
20140264474 | STACKED SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME RELATED CASES - A stacked semiconductor device includes a CMOS device and a MEMS device. The CMOS device includes a multilayer interconnect with metal elements disposed over the multilayer interconnect. The MEMS device includes metal sections with a first dielectric layer disposed over the metal sections. A cavity in the first dielectric layer exposes portions of the metal sections. A dielectric stop layer is disposed at least over the interior surface of the cavity. A movable structure is disposed over a front surface of the first dielectric layer and suspending over the cavity. The movable structure includes a second dielectric layer over the front surface of the first dielectric layer and suspending over the cavity, metal features over the second dielectric layer, and a flexible dielectric membrane over the metal features. The CMOS device is bonded to the MEMS device with the metal elements toward the flexible dielectric membrane. | 09-18-2014 |
20140264475 | MEMS DEVICE STRUCTURE WITH A CAPPING STRUCTURE - An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer. | 09-18-2014 |
20140291733 | STRAIN SENSING DEVICE USING REDUCED GRAPHENE OXIDE AND METHOD OF MANUFACTURING THE SAME - Provided is a strain sensing device using reduced graphene oxide (R-GO). The strain sensing device includes a flexible substrate, a gate electrode formed on the flexible substrate, a gate insulating layer configured to cover the gate electrode and include a part formed of a flexible material, an active layer formed of R-GO for sensing a strain, on the gate insulating layer, and a source and drain electrode formed on the active layer. | 10-02-2014 |
20140319585 | SEMICONDUCTOR PRESSURE SENSOR AND FABRICATION METHOD THEREOF - At a pressure sensor region, a pressure sensor including a fixed electrode, a vacuum chamber and a movable electrode is formed at a pressure sensor region, whereas a memory cell transistor and a field effect transistor are formed at a MOS region. An etching hole communicating with the vacuum chamber is sealed by a first sealing film and the like. The vacuum chamber is formed by removing a portion of a film identical to the film of a gate electrode of the memory cell transistor. | 10-30-2014 |
20140339607 | FABRICATING POLYSILICON MOS DEVICES AND PASSIVE ESD DEVICES - A semiconductor fabrication is described, wherein a MOS device and a MEMS device is fabricated simultaneously in the BEOL process. A silicon layer is deposited and etched to form a silicon film for a MOS device and a lower silicon sacrificial film for a MEMS device. A conductive layer is deposited atop the silicon layer and etched to form a metal gate and a first upper electrode. A dielectric layer is deposited atop the conductive layer and vias are formed in the dielectric layer. Another conductive layer is deposited atop the dielectric layer and etched to form a second upper electrode and three metal electrodes for the MOS device. Another silicon layer is deposited atop the other conductive layer and etched to form an upper silicon sacrificial film for the MEMS device. The upper and lower silicon sacrificial films are then removed via venting holes. | 11-20-2014 |
20140361348 | METHOD AND STRUCTURE OF AN INTEGRATED MEMS INERTIAL SENSOR DEVICE USING ELECTROSTATIC QUADRATURE-CANCELLATION - An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode. | 12-11-2014 |
20140374804 | Micromechanical Sensor Apparatus having a Movable Gate and Corresponding Production Method - A micromechanical sensor apparatus having a movable gate includes a field effect transistor that has a movable gate, which is separated from a channel region by a cavity. The channel region is covered by a gate insulation layer. | 12-25-2014 |
20150060954 | CMOS-MEMS Integrated Flow for Making a Pressure Sensitive Transducer - A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device. | 03-05-2015 |
20150060955 | INTEGRATED MEMS MICROPHONE WITH MECHANICAL ELECTRICAL ISOLATION - An integrated MEMS microphone is provided, including, a bonding wafer layer, a bonding layer, an aluminum layer, CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a diaphragm, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer forming CMOS transistor gates, said CMOS wells, said CMOS transistor sources/drains and said CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. Diaphragm is sandwiched between a small top chamber and a small back chamber, and substrate layer includes a large back chamber. | 03-05-2015 |
20150060956 | INTEGRATED MEMS PRESSURE SENSOR WITH MECHANICAL ELECTRICAL ISOLATION - An integrated MEMS pressure sensor is provided, including, a CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a membrane, including an implant doped polysilicon layer and a non-doped polysilicon layer, a second non-doped polysilicon layer, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer made of polysilicon forming CMOS transistor gates, said CMOS wells, CMOS transistor sources/drains and CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. N+ implant doped silicon layer and implant doped/un-doped composition polysilicon layer forming a sealed vacuum chamber. | 03-05-2015 |
20150069472 | ELECTROMECHANICAL SWITCHING DEVICE WITH 2D LAYERED MATERIAL SURFACES - The present invention is notably directed to an electromechanical switching device having: two electrodes, including: a first electrode, having layers of a first 2D layered material, which layers exhibit a first surface; and a second electrode, having layers of a second 2D layered material, which layers exhibit a second surface vis-à-vis said first surface; and an actuation mechanism, where: each of the first and second 2D layered materials is electrically conducting; and at least one of said two electrodes is actuatable by the actuation mechanism to modify a distance between the first surface and the second surface, such as to modify an electrical conductivity transverse to each of the first surface and the second surface and thereby enable current modulation between the first electrode and the second electrode. | 03-12-2015 |
20150097215 | MECHANISMS FOR FORMING MICRO-ELECTRO MECHANICAL SYSTEM DEVICE - Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate and a MEMS substrate bonded with the CMOS substrate. The CMOS substrate includes a semiconductor substrate, a first dielectric layer formed over the semiconductor substrate, and a plurality of conductive pads formed in the first dielectric layer. The MEMS substrate includes a semiconductor layer having a movable element and a second dielectric layer formed between the semiconductor layer and the CMOS substrate. The MEMS substrate also includes a closed chamber surrounding the movable element. The MEMS substrate further includes a blocking layer formed between the closed chamber and the first dielectric layer of the CMOS substrate. The blocking layer is configured to block gas, coming from the first dielectric layer, from entering the closed chamber. | 04-09-2015 |
20150102390 | INTEGRATED CMOS BACK CAVITY ACOUSTIC TRANSDUCER AND THE METHOD OF PRODUCING THE SAME - A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity. | 04-16-2015 |
20150115331 | SENSOR USING SENSING MECHANISM HAVING COMBINED STATIC CHARGE AND FIELD EFFECT TRANSISTOR - The present invention relates to a sensor that uses a sensing mechanism having a combined static charge and a field effect transistor, the sensor including: a substrate; source and drain units formed on the substrate and separated from each other; a channel unit interposed between the source and drain units; a membrane separated from the channel unit, disposed on a top portion and displaced in response to an external signal; and a static charge member formed on a bottom surface of the membrane separately from the channel unit and generating an electric field. Accordingly, since the sensor using a sensing mechanism having a combined static charge and a field effect transistor according to an embodiment of the present invention can measure the displacement or movement of the sensor by measuring a change of the electric field of the channel unit of the field effect transistor by using a static member, the electric field can be formed so as to be proportional to an amount of charge and inversely proportional to a squared distance regardless of the intensity and distribution of an external electric field. Therefore, sensitivity is improved without being affected by an external electric field. | 04-30-2015 |
20150353344 | CAVITY STRUCTURES FOR MEMS DEVICES - Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity. | 12-10-2015 |
20150375998 | MICROMECHANICAL SYSTEM AND METHOD FOR MANUFACTURING A MICROMECHANICAL SYSTEM - A method for manufacturing a micromechanical system includes forming in a Front-End-of-Line (FEOL) process transistors in a transistor region; after the FEOL-process, forming a sacrificial layer; structuring the sacrificial layer to form a structured sacrificial layer; forming a functional layer at least partially covering the structured sacrificial layer; and removing the sacrificial layer to create a cavity. | 12-31-2015 |
20150375999 | MICROMECHANICAL SYSTEM AND METHOD FOR MANUFACTURING A MICROMECHANICAL SYSTEM - A method for manufacturing a micromechanical system is shown. The method comprises the steps of forming in a front end of line (FEOL) process a transistor in a transistor region. After the FEOL process, a protective layer is deposited in the transistor region, wherein the protective layer comprises an isolating material, e.g. an oxide. A structured sacrificial layer is formed at least in a region which is not the transistor region. Furthermore, a functional layer is formed which is at least partially covering the structured sacrificial layer. After the functional layer is formed removing the sacrificial layer in order to create a cavity between the functional layer and a surface, where the sacrificial layer was deposited on. The protective layer protects the transistor from being damaged especially during etching processes in further processing steps in MOL (middle of line) and BEOL (back end of line) processes. Using an oxide for said protective layer is advantageous, since the same oxide may be used as the basis for a metallization process in the BEOL. Therefore, the protective layer may remain over the transistor and does not need to be removed like the sacrificial layer, which is typically used as a protection for the transistor. Therefore, the protective layer becomes part of the oxide coverage, which is applied before the BEOL process. | 12-31-2015 |
20160002026 | METHODS AND DEVICES FOR MICROELECTROMECHANICAL PRESSURE SENSORS - MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics. | 01-07-2016 |
20160018708 | DISPLAY DEVICE - A display device is provided that inhibits color mixture between adjacent subpixels and allows for obtaining a high-quality image. The display device includes a display area on which a light-blocking metal layer, a black matrix, and a plurality of subpixels are arranged, wherein the plurality of subpixels are arranged adjacent to one another via a black matrix as seen vertically from above, the black matrix and the light-blocking metal layer are arranged to overlap each other as seen vertically from above, and the light-blocking metal layer | 01-21-2016 |
20160056288 | CIRCUIT ELEMENT INCLUDING A LAYER OF A STRESS-CREATING MATERIAL PROVIDING A VARIABLE STRESS - An integrated circuit includes a first transistor having a first source region, a first drain region, a first channel region, a first gate electrode, and a first layer of a first stress-creating material, the first stress-creating material providing a stress that is variable in response to a signal acting on the first stress-creating material, wherein the first layer of the first stress-creating material is arranged to provide a first variable stress in the first channel region of the first transistor, the first variable stress being variable in response to a first signal acting on the first stress-creating material. The integrated circuit also includes a second transistor having a second source region, a second drain region, a second channel region, and a second gate electrode. | 02-25-2016 |
20160086660 | ELECTROMECHANICAL NONVOLATILE MEMORY - A semiconductor device includes an insulating layer on a semiconductor substrate, a bit line including TiAl and disposed on the insulating layer, a sidewall layer disposed on opposite sides of the bit line, a word line including TiN and disposed on the sidewall layer intersecting the bit line, and an air gap in an intersection region of the bit line and the word line. The thickness of the sidewall layer is larger than the thickness of the bit line. By having the TiAl bit line and TiN word line, the uniformity of the bit line and word line can be easily controlled to improve the performance of the semiconductor device. | 03-24-2016 |
20160087188 | SENSING DEVICE - A sensing device is provided for acquiring a surface image of an object. The sensing device includes a protective layer, a conductive material layer under the protective layer, a first conductive film layer under the conductive material layer, a sensing layer under the first conductive film layer and a substrate under the sensing layer. When a surface of the object is pressed on the protective layer, a sensing signal is transmitted from the sensing layer to the surface of the object and a reflecting signal reflected from the surface of the object is received by the sensing layer. Then, a current signal corresponding to the reflecting signal is transmitted from the substrate to a central processing unit through the first conductive film layer. Consequently, the current signal is converted into the surface image of the object by the central processing unit. | 03-24-2016 |
20160090300 | PIEZOELECTRIC MICROPHONE WITH INTEGRATED CMOS - A piezoelectric microphone and/or a piezoelectric microphone system is presented herein. In an implementation, a piezoelectric microphone includes a microelectromechanical systems (MEMS) layer and a complementary metal-oxide-semiconductor (CMOS) layer. The MEMS layer includes at least one piezoelectric layer and a conductive layer. The conductive layer is deposited on the at least one piezoelectric layer and is associated with at least one sensing electrode. The CMOS layer is deposited on the MEMS layer. Furthermore, a cavity formed in the CMOS layer includes the at least one sensing electrode | 03-31-2016 |
20160107883 | METHOD AND DEVICE OF MEMS PROCESS CONTROL MONITORING AND PACKAGED MEMS WITH DIFFERENT CAVITY PRESSURES - A method for fabricating an integrated MEMS device and the resulting structure therefore. A control process monitor comprising a MEMS membrane cover can be provided within an integrated CMOS-MEMS package to monitor package leaking or outgassing. The MEMS membrane cover can separate an upper cavity region subject to leaking from a lower cavity subject to outgassing. Differential changes in pressure between these cavities can be detecting by monitoring the deflection of the membrane cover via a plurality of displacement sensors. An integrated MEMS device can be fabricated with a first and second MEMS device configured with a first and second MEMS cavity, respectively. The separate cavities can be formed via etching a capping structure to configure each cavity with a separate cavity volume. By utilizing an outgassing characteristic of a CMOS layer within the integrated MEMS device, the first and second MEMS cavities can be configured with different cavity pressures. | 04-21-2016 |
20160115013 | CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer - A method of fabricating a semiconductor device comprises forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion, forming a source region and a drain region in the substrate, forming a gate electrode in the proof mass portion, and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region. | 04-28-2016 |
20160176701 | MEMS ELECTROSTATIC ACTUATOR DEVICE FOR RF VARACTOR APPLICATIONS | 06-23-2016 |
20160202132 | LOAD SENSOR USING VERTICAL TRANSISTOR | 07-14-2016 |