Class / Patent application number | Description | Number of patent applications / Date published |
257229000 | Having structure to improve output signal (e.g., exposure control structure) | 63 |
20080210983 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device including: a plurality of photodiode parts ( | 09-04-2008 |
20090001427 | CHARGE CARRIER BARRIER FOR IMAGE SENSOR - A pixel sensor structure, method of manufacture and method of operating. Disclosed is a buffer pixel cell comprising a barrier region for preventing stray charge carriers from arriving at a dark current correction pixel cell. The buffer pixel cell is located in the vicinity of the dark current correction pixel cell and the buffer pixel cell resembles an active pixel cell. Thus, an environment surrounding the dark current correction pixel cell is similar to the environment surrounding an active pixel cell. | 01-01-2009 |
20100264464 | IMAGE SENSOR PHOTODIODE ARRANGEMENT - The present invention relates to a technology for reducing dark current noise by discharging electrons accumulated on a surface of an image sensor photodiode. In an N-type or P-type photodiode, a channel is formed between the photodiode and a power voltage terminal, so that electrons (or holes) accumulated on a surface of the photodiode are discharged to the power voltage terminal through the channel. | 10-21-2010 |
20110215381 | SOLID STATE IMAGING DEVICE - Each pixel of a solid state imaging device comprises a first semiconductor layer formed on a substrate, having a first-conductive type; a second semiconductor layer formed thereon, having a second-conductivity type; a third semiconductor layer formed in the upper side of the second semiconductor layer, having the first-conductivity type; a fourth semiconductor layer formed in the outer side of the third semiconductor layer, having the second-conductivity type; a gate conductor layer formed on the lower side of the second semiconductor layer via an insulating film; and a fifth semiconductor layer formed on the top surfaces of the second semiconductor layer and third semiconductor layer, having the second-conductivity type, wherein the fifth semiconductor layer and fourth semiconductor layer are connected to each other, and at least the third semiconductor layer, upper region of the second semiconductor layer, fourth semiconductor layer, and fifth semiconductor layer are formed in an island. | 09-08-2011 |
20120025275 | CCD SENSORS WITH MULTIPLE CONTACT PATTERNS - A pixel array in an image sensor includes multiple pixels. The pixel array includes vertical shift registers for shifting charge out of the pixel array. The vertical shift registers can be interspersed between the pixels, such as in an interline image sensor, or the photosensitive areas in the pixels can operate as vertical shift registers. The pixels are divided into blocks of pixels. One or more electrodes are disposed over each pixel. Conductive strips are disposed over the electrodes. Contacts are used to connect selected electrodes to respective conductive strips. The contacts in at least one block of pixels are positioned according to one contact pattern while the contacts in one or more other blocks are positioned according to a different contact pattern. The different contact patterns reduce or eliminate visible patterns in the contact locations. | 02-02-2012 |
20120187455 | PHOTOSENSOR AND DISPLAY DEVICE - The sensitivity of a photosensor is improved without decreasing read-out efficiency. The photosensor includes: a photodiode (D | 07-26-2012 |
20130248938 | PN-Structured Gate Demodulation Pixel - A novel photo-sensitive element for electronic imaging purposes and, in this context, is particularly suited for time-of-flight 3D imaging sensor pixels. The element enables charge-domain photo-detection and processing based on a single gate architecture. Certain regions for n and p-doping implants of the gates are defined. This kind of single gate architecture enables low noise photon detection and high-speed charge transport methods at the same time. A strong benefit compared to known pixel structures is that no special processing steps are required such as overlapping gate structures or very high-ohmic poly-silicon deposition. In this sense, the element relaxes the processing methods so that this device may be integrated by the use of standard CMOS technology for example. Regarding time-of-flight pixel technology, a major challenge is the generation of lateral electric fields. The element allows the generation of fringing fields and large lateral electric fields. | 09-26-2013 |
20140048852 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF THE SAME AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging device including: an opto-electrical conversion section provided inside a semiconductor substrate to receive incident light coming from one surface of the semiconductor substrate; a wiring layer provided on the other surface of the semiconductor substrate; and a light absorption layer provided between the other surface of the semiconductor substrate and the wiring layer to absorb transmitted light passing through the opto-electrical conversion section as part of the incident light. | 02-20-2014 |
20140097476 | SOLID-STATE IMAGING APPARATUS AND ELECTRONIC APPARATUS - A solid-state imaging apparatus includes a charge accumulation unit, a signal voltage detection unit, a transfer transistor, and a pinning layer. The charge accumulation unit accumulates photoelectrically converted charges, and is formed on a silicon substrate. The signal voltage detection unit detects signal voltage corresponding to the charges accumulated in the charge accumulation unit, and is formed on the silicon substrate. The transfer transistor transfers the charges accumulated in the charge accumulation unit to the signal voltage detection unit, and is formed on the silicon substrate. The pinning layer pins a surface of the silicon substrate so that the surface is filled with electron holes, and is formed directly on the silicon substrate at a gate end at which a gate electrode of the transfer transistor and the charge accumulation unit come into contact with each other on the silicon substrate. | 04-10-2014 |
20140167118 | CROSSTALK IMPROVEMENT THROUGH P ON N STRUCTURE FOR IMAGE SENSOR - The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer. | 06-19-2014 |
20140197464 | CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - A CMOS image sensor has a photodiode including first and second impurity layers sequentially formed on a substrate, an isolation layer on the second impurity layer, and a transfer gate structure through the second impurity layer. The transfer gate structure contacts a top surface of the first impurity layer and a portion of the second impurity layer and includes a bottom surface having a step shape. | 07-17-2014 |
20140252420 | SEMICONDUCTOR DEVICES INCLUDING GATE ELECTRODES WITH MULTIPLE PROTRUSIONS CONFIGURED FOR CHARGE TRANSFER - An image sensor device can include device isolation regions in a substrate and a photoelectric conversion portion in the substrate that can be between the device isolation regions. A transfer gate of the image sensor device, can be located over, and be electrically coupled to, the photoelectric conversion portion. The transfer gate can include at least two protrusions, that are separated from the device isolation regions, and that protrude toward the photoelectric conversion portion. | 09-11-2014 |
20140312391 | IMAGE SENSOR - An image sensor includes a first sub-gate in a recessed region in a substrate; a second sub-gate on the first sub-gate in contact with an upper surface of the substrate; and an element isolation region in the substrate spaced apart from the first sub-gate. A lower surface of the second sub-gate is wider than an upper surface of the first sub-gate, and a portion of the element isolation region is spaced apart from the second sub-gate by a first distance in a first direction. | 10-23-2014 |
20140327052 | SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE - Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed. | 11-06-2014 |
20140346572 | IMAGE SENSOR PIXEL CELL WITH GLOBAL SHUTTER HAVING NARROW SPACING BETWEEN GATES - A pixel cell includes a photodiode, a storage transistor, a transfer transistor and an output transistor disposed in a semiconductor substrate. The transfer transistor selectively transfers image charge accumulated in the photodiode from the photodiode to the storage transistor. The output transistor selectively transfers the image charge from the storage transistor to a readout node. A first isolation fence is disposed over the semiconductor substrate separating a transfer gate of the transfer transistor from a storage gate of the storage transistor. A second isolation fence is disposed over the semiconductor substrate separating the storage gate from an output gate of the output transistor. Thicknesses of the first and second isolation fences are substantially equal to spacing distances between the transfer gate and the storage gate, and between the storage gate and the output gate, respectively. | 11-27-2014 |
20140374803 | DRIVING METHOD OF A SEMICONDUCTOR DEVICE - A horizontal scanning period is divided into n parts (n is a natural number), so that horizontal scanning can be performed (n×y) times in one frame period. That is, n signals can be outputted from each pixel, and storage times of the n signals are different from one another. Then, since a signal suited to the intensity of light irradiated to each pixel can be selected, information of an object can be accurately read. | 12-25-2014 |
20150014751 | SENSOR AND METHOD FOR FABRICATING THE SAME - A sensor and its fabrication method are provided. The sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a Thin Film Transistor (TFT) device and a photodiode sensing device, wherein the photodiode sensor device comprises: a bias line disposed on the base substrate; a transparent electrode disposed on the bias line and being electrically contacted with the bias line; a photodiode disposed on the transparent electrode; and a receiving electrode disposed on the photodiode; the TFT device is located above the photodiode. When the sensor is functioning, light is directly transmitted onto the photodiode sensor device through the base substrate. In comparison with conventional technologies, the light loss is largely reduced and the light absorption usage ratio is improved. | 01-15-2015 |
20150041865 | PIXEL CIRCUIT - A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer gate transistor configured to transfer charge from the photodiode to a node, wherein the transfer gate transistor is controlled by a transfer gate voltage, and a source follower transistor controlled by the voltage on the node and coupled to a source follower voltage. A capacitor is coupled between the node and an input voltage. During a read operation the input voltage is increased to boost the voltage at the node. The increased input voltage may, for example, be one the reset input voltage, said source follower voltage, said transfer gate voltage and a boosting voltage. | 02-12-2015 |
20150076566 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF - The performances of a semiconductor device are improved. A semiconductor device has a photodiode and a transfer transistor formed in a pixel region. Further, the semiconductor device has a second transistor formed in a peripheral circuit region. The transfer transistor includes a first gate electrode, and a film part formed of a thick hard mask film formed over the first gate electrode. The second transistor includes a second gate electrode, source/drain regions, silicide layers formed at the upper surface of the second gate electrode, and the upper surfaces of the source/drain regions. | 03-19-2015 |
20150303229 | CMOS PROTECTION DURING GERMANIUM PHOTODETECTOR PROCESSING - A method of protecting a CMOS device within an integrated photonic semiconductor structure is provided. The method may include depositing a conformal layer of germanium over the CMOS device and an adjacent area to the CMOS device, depositing a conformal layer of dielectric hardmask over the germanium, and forming, using a mask level, a patterned layer of photoresist for covering the CMOS device and a photonic device formation region within the adjacent area. Openings are etched into areas of the deposited layer of silicon nitride not covered by the patterned photoresist, such that the areas are adjacent to the photonic device formation region. The germanium material is then etched from the conformal layer of germanium at a location underlying the etched openings for forming the photonic device at the photonic device formation region. The conformal layer of germanium deposited over the CMOS device protects the CMOS device. | 10-22-2015 |
20150303234 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC DEVICE - A solid-state imaging device including a pixel region in which a plurality of pixels are arranged. The pixels each includes a photoelectric conversion section, a transfer transistor, a plurality of floating diffusion sections that receive a charge from the photoelectric conversion section through the transfer transistor, a reset transistor that resets the floating diffusion sections, a separating transistor that performs on-off control of a connection between the plurality of floating diffusion sections, and an amplifying transistor that outputs a signal corresponding to a potential of the floating diffusion sections. | 10-22-2015 |
20150357363 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel having a photoelectric conversion element which generates a charge in response to incident light, a first transfer gate which transfers the charge from the photoelectric conversion element to a charge holding section, and a second transfer gate which transfers the charge from the charge holding section to a floating diffusion. The first transfer gate includes a trench gate structure having at least two trench gate sections embedded in a depth direction of a semiconductor substrate, and the charge holding section includes a semiconductor region positioned between adjacent trench gate sections. | 12-10-2015 |
20150372032 | SOLID-STATE IMAGING DEVICE WITH CHANNEL STOP REGION WITH MULTIPLE IMPURITY REGIONS IN DEPTH DIRECTION AND METHOD FOR MANUFACTURING THE SAME - Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate. | 12-24-2015 |
20160005777 | SOLID STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit. | 01-07-2016 |
20160005788 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - Provided is a solid-state imaging apparatus including plural pixels each including a first pixel connecting transistor and a second pixel connecting transistor each connected at one end to a floating diffusion node, a first pixel connecting line connected to the other end of the first pixel connecting transistor, and a second pixel connecting line connected to the other end of the second pixel connecting transistor. The first pixel connecting line provided in a first pixel of the plural pixels is connected to the second pixel connecting line provided in a second pixel of the plural pixels, and the second pixel connecting line provided in the first pixel is connected to the first pixel connecting line provided in a third pixel of the plural pixels. | 01-07-2016 |
20160013227 | PIXEL ARRAYS OF IMAGE SENSORS, AND IMAGE SENSORS INCLUDING THE PIXEL ARRAYS | 01-14-2016 |
20160020232 | SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a solid state imaging device includes a semiconductor layer and an anti-reflection film. The semiconductor layer performs photoelectric conversion. The anti-reflection film is provided on the semiconductor layer. The anti-reflection film is conductive. | 01-21-2016 |
20160027828 | Image Sensors - Image sensors are provided. The image sensors can include a photodiode in a substrate configured to generate signal charges based on incident light, a charge storage unit positioned at a side of the photodiode configured to temporarily store the signal charges generated by the photodiode, and a shield metal on the charge storage unit and on the substrate. | 01-28-2016 |
20160035774 | IMAGE SENSORS AND METHODS OF FABRICATING THE SAME - An image sensor includes a photoelectric conversion element in a substrate, a first storage region spaced apart from the photoelectric conversion element in the substrate, a gate on the first storage region, a light shielding layer covering the gate, a dielectric layer disposed between the gate and the light shielding layer and extending onto a top surface of the substrate, an interlayer insulating structure covering the light shielding layer, and a micro-lens overlapping with the photoelectric conversion element on the interlayer insulating structure. The light shielding layer includes a first portion covering a sidewall of the gate, and a second portion on a top surface of the gate. The first portion has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and the first thickness is greater than a second thickness of the second portion. | 02-04-2016 |
20160043118 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having good properties. Particularly, the semiconductor device is provided which can improve imaging properties. The semiconductor device (CMOS image sensor) includes a plurality of pixels, each having a photodiode PD for generating a charge by receiving light, and a transfer transistor TX for transferring the charge generated by the photodiode PD. The semiconductor device further includes an active region AcTP with the photodiode, and an active region AcG located on an upper side of the region AcTP in the planar direction and having a contact Pg to which a ground potential is applied. A gettering region GET is disposed in the active region AcG. | 02-11-2016 |
20160043120 | PIXEL, IMAGE SENSOR INCLUDING THE SAME, AND PORTABLE ELECTRONIC DEVICE INCLUDING THE IMAGE SENSOR - A pixel for a backside illuminated (BSI) image sensor includes a semiconductor substrate having a first surface and a second surface, a photoelectric conversion region between the first surface and the second surface to generate charges in response to light received through the second surface, first trench-type isolation region surrounding the photoelectric conversion region and extending vertically from the second surface, a floating diffusion region in the semiconductor substrate below the photoelectric conversion region, and a transfer gate extending vertically from the first surface towards the photoelectric conversion region to transfer the charges from the photoelectric conversion region to the floating diffusion region. The first trench-type isolation region is formed of a negative charge material. | 02-11-2016 |
20160043127 | RADIATION DETECTOR - A radiation detector may include: a common electrode; a thin film transistor (TFT) array; a photoconductor material layer disposed between the common electrode and the TFT array; and a diffusion stop layer, disposed between the common electrode and the TFT array, on a location corresponding to a connecting portion where the common electrode is connected to a bias voltage supply source, wherein the diffusion stop layer prevents a metal included in the connecting portion from diffusing to the photoconductor material layer. | 02-11-2016 |
20160049438 | IMAGING DEVICE AND IMAGING UNIT - An imaging device having a first surface on which light is incident and a second surface on an opposite side of the first surface, includes a photoelectric conversion section including semiconductors having a same conductivity type, in which an impurity concentration on the second surface side is higher than an impurity concentration on the first surface side. | 02-18-2016 |
20160064437 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion. | 03-03-2016 |
20160093651 | SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND MANUFACTURING METHOD - The present disclosure relates to a solid-state imaging device, an electronic apparatus, and a manufacturing method that are designed to further increase conversion efficiency. A solid-state imaging device includes a pixel in which element separation is realized by a first trench element separation region having a trench structure in a region between an FD unit and an amplifying transistor among element separation elements separating the elements constituting the pixel from one another, and a second trench element separation region having a trench structure in a region other than the region between the FD unit and the amplifying transistor among the element separation regions separating the elements constituting the pixel from one another, and the first trench element separation region is deeper than the second trench element separation region. The present technology can be applied to CMOS image sensors, for example. | 03-31-2016 |
20160093664 | IMAGE SENSOR PIXEL CELL WITH NON-DESTRUCTIVE READOUT - A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor. | 03-31-2016 |
20160104729 | PINNED PHOTODIODE WITH A LOW DARK CURRENT - A method of manufacturing a pinned photodiode, including: forming a region of photon conversion into electric charges of a first conductivity type on a substrate of the second conductivity type; coating said region with a layer of a heavily-doped insulator of the second conductivity type; and annealing to ensure a dopant diffusion from the heavily-doped insulator layer. | 04-14-2016 |
20160111459 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween. | 04-21-2016 |
20160118438 | ISOLATED GLOBAL SHUTTER PIXEL STORAGE STRUCTURE - A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed to the photodiode. A global shutter gate transistor disposed in the semiconductor material and is coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An optical isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge in the semiconductor material outside of the storage transistor. The optical isolation structure is filled with tungsten. | 04-28-2016 |
20160126278 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE PHOTOELECTRIC CONVERSION DEVICE - A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member. | 05-05-2016 |
20160133663 | SOLID-STATE IMAGE SENSOR AND CAMERA - An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face. | 05-12-2016 |
20160181296 | IMAGE SENSOR PIXEL FOR HIGH DYNAMIC RANGE IMAGE SENSOR | 06-23-2016 |
20160181297 | IMAGE SENSOR PIXEL FOR HIGH DYNAMIC RANGE IMAGE SENSOR | 06-23-2016 |
20160197110 | Methods of Manufacturing Semiconductor Devices | 07-07-2016 |
20160204143 | IMAGE SENSORS AND METHODS OF FORMING THE SAME | 07-14-2016 |
20160204144 | IMAGE SENSORS AND METHODS OF FORMING THE SAME | 07-14-2016 |
20160204150 | IMAGE SENSOR | 07-14-2016 |
20160204153 | SOLID-STATE IMAGING APPARATUS, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS | 07-14-2016 |
20160204160 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS | 07-14-2016 |
257230000 | With blooming suppression structure | 14 |
20090065814 | MOS device with schottky barrier controlling layer - A semiconductor device is formed on a semiconductor substrate. The semiconductor device comprises a drain, an epitaxial layer overlaying the drain, and an active region. The active region comprises a body disposed in the epitaxial layer, having a body top surface, a source embedded in the body, extending from the body top surface into the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source and the body into the drain, an active region contact electrode disposed within the active region contact trench, wherein the active region contact electrode and the drain form a Schottky diode, and a Schottky barrier controlling layer disposed in the epitaxial layer adjacent to the active region contact trench. | 03-12-2009 |
20090072275 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF AS WELL AS DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area. | 03-19-2009 |
20100163933 | ANTIBLOOMING IMAGING APPARATUS, SYSTEMS, AND METHODS - Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier arrangement is configured to block the flow of charge carriers generated outside a photosensitive region. In various embodiments, a potential well-potential barrier arrangement is formed to direct charge carriers away from the photosensitive region during an integration time. | 07-01-2010 |
20120037960 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode. | 02-16-2012 |
20130313616 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE - A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate. | 11-28-2013 |
20130341684 | SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device, including a semiconductor substrate; a photoelectric conversion region in the semiconductor substrate that generates charges in response to light incident thereon; an electric charge holding region in the semiconductor substrate and capable of holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out from the electric charge holding region; a transfer gate that effects transfer of electric charges generated in the photoelectric conversion region to the electric charge holding region; a light blocking film over an upper surface of the transfer gate; and an insulating layer over the substrate and between the semiconductor substrate and the light blocking film, wherein, a portion of the insulating layer over the photoelectric conversion region is more thinly formed than the insulating layer not over the photoelectric conversion region. | 12-26-2013 |
20140138748 | CMOS MULTI-PINNED (MP) PIXEL - A CMOS multi-pinned pixel having very low dark current and very high charge transfer performance over that of conventional CMOS pixels is disclosed. The CMOS pixel includes epitaxial silicon and at least one transfer gate formed upon the epitaxial silicon. A pinned-photodiode is formed in the epitaxial silicon. A multi-pinned (MP) implant layer is implanted in the epitaxial silicon at least partially extending across the pinned-photodiode and substantially underlying the at least one transfer gate of the CMOS pixel to promote dark current passivation during an accumulation state and promote charge transfer during a transfer state. | 05-22-2014 |
20140231879 | Pixel Structure - A pixel structure comprises an epitaxial layer ( | 08-21-2014 |
20140231880 | IMAGING SENSOR - An imaging sensor of the charge transfer type that limits the transmission of radiation from high intensity light sources. The invention addresses potential saturation levels during exposure or stare time and so saturation is never achieved, this provides for a wider dynamic range. | 08-21-2014 |
20140246707 | Image Sensors Including Conductive Pixel Separation Structures - An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed. | 09-04-2014 |
20150048426 | IMAGE SENSOR INCLUDING SOURCE FOLLOWER - Provided is an image sensor including a source follower transistor. The source follower transistor may include a channel structure that is provided between a source and a drain, and includes a first semiconductor layer, a second semiconductor layer, and a blocking structure. The first semiconductor layer may be spaced apart from a gate insulating layer of the source follower transistor by a first depth or more. Carriers may move from the source of the source follower transistor to the drain thereof through the first semiconductor layer. | 02-19-2015 |
20150084098 | PIXEL CIRCUIT FOR GLOBAL SHUTTER OF SUBSTRATE STACKED IMAGE SENSOR - A pixel circuit for a global shutter of a substrate-stacked image sensor may include a semiconductor chip including: a photodiode configured to output electric charges generated through a light sensing operation; and a reset node configured to receive a reset voltage from a reset voltage node and reset the photodiode. The semiconductor chip may have a structure in which the semiconductor chip is stacked over another semiconductor chip. | 03-26-2015 |
20150123172 | BIG-SMALL PIXEL SCHEME FOR IMAGE SENSORS - An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region. | 05-07-2015 |
20160204159 | SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS | 07-14-2016 |