Class / Patent application number | Description | Number of patent applications / Date published |
257187000 | Having transistor structure | 14 |
20090166674 | Ultraviolet light receiving element - In an ultraviolet light receiving element using a group III nitride semiconductor, the ultraviolet light receiving element having an enhanced light receiving sensitivity is provided. An electron is excited from a valence band to a conduction band | 07-02-2009 |
20090242935 | MONOLITHICALLY INTEGRATED PHOTODETECTORS - Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based photodetector comprising an active region including at least a portion of the monocrystalline silicon layer. The structure also includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure includes at least one non-silicon photodetector comprising an active region including at least a portion of the second monocrystalline semiconductor layer. | 10-01-2009 |
20090321786 | Band Gap Modulated Optical Sensor - A complementary metal-oxide-semiconductor (CMOS) optical sensor structure comprises a pixel containing a charge collection well of a same semiconductor material as a semiconductor layer in a semiconductor substrate and at least another pixel containing another charge collection well of a different semiconductor material than the material of the semiconductor layer. The charge collections wells have different band gaps, and consequently, generate charge carriers in response to light having different wavelengths. The CMOS sensor structure thus includes at least two pixels responding to light of different wavelengths, enabling wavelength-sensitive, or color-sensitive, capture of an optical data. Further, a design structure for the inventive complementary metal-oxide-semiconductor (CMOS) image sensor is also provided. | 12-31-2009 |
20100006892 | NEAR-FIELD TERAHERTZ WAVE DETECTOR - A near-field terahertz wave detector comprises a semiconductor chip ( | 01-14-2010 |
20100140662 | OPTICAL RECEIVER AND METHOD OF FORMING THE SAME - Provided are an optical receiver and a method of forming the same. The optical receiver includes a lens, a photo detector, and a hetero-junction bipolar transistor. The lens is attached to a backside of a substrate. The photo detector is disposed on a top surface of the substrate. The hetero-junction bipolar transistor is disposed on the top surface of the substrate. The lens condenses an incident optical signal to transmit the condensed optical signal to the photo detector. | 06-10-2010 |
20100176420 | MESA HETEROJUNCTION PHOTOTRANSISTOR AND METHOD FOR MAKING SAME - A two-terminal mesa phototransistor and a method for making it are disclosed. The photo transistor has a mesa structure having a substantially planar semiconductor surface. In the mesa structure is a first semiconductor region of a first doping type, and a second semiconductor region of a second doping type opposite to that of the first semiconductor region, forming a first semiconductor junction with the first region. In addition, a third semiconductor region of the first doping type forms a second semiconductor junction with the second region. The structure also includes a dielectric layer. The second semiconductor region, first semiconductor junction, and second semiconductor junction each has an intersection with the substantially planar semiconductor surface. The dielectric covers, and is in physical contact with, all of the intersections. | 07-15-2010 |
20110001166 | PHOTO-FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD - This invention provides a photo-FET, in which a FET part and photodiode part are stacked, and the FET part and photodiode part are optimized independently in design and operational bias conditions. The semiconductor layer serving as a photo-absorption layer ( | 01-06-2011 |
20110291158 | HETERO-JUNCTION BIPOLAR PHOTOTRANSISTOR - The present invention provides a HPT having high sensitivity and extensive wavelength band characteristics. The collector and barrier layer ( | 12-01-2011 |
20120080719 | APPARATUS WITH PHOTODIODE REGION IN MULTIPLE EPITAXIAL LAYERS - A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer. | 04-05-2012 |
20150041851 | CIS Image Sensors with Epitaxy Layers and Methods for Forming the Same - A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric. | 02-12-2015 |
20150333098 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME - A photoelectric conversion device includes a pixel circuit section including: a first semiconductor region containing a first conductivity type impurity; a second semiconductor region formed in the first semiconductor region by using the first conductivity type impurity; a third semiconductor region formed in the second semiconductor region by using a second conductivity type impurity; and a contact plug formed on the third semiconductor region. A net concentration of the first conductivity type impurity is higher in the second semiconductor region than in the first and third semiconductor regions. In the second and third semiconductor regions, a distance between the contact plug and a position where the concentration of the second conductivity type impurity is maximum is equal to or less than a distance between the contact plug and a position where the concentration of the first conductivity type impurity is maximum. | 11-19-2015 |
20150372181 | ACTIVE PHOTONIC DEVICE HAVING A DARLINGTON CONFIGURATION - An active photonic device having a Darlington configuration is disclosed. The active photonic device includes a substrate with a collector layer over the substrate. The collector layer includes an inner collector region and an outer collector region that substantially surrounds the inner collector region. A base layer resides over the collector layer. The base layer includes an inner base region and an outer base region that substantially surrounds and is spaced apart from the inner base region. An emitter layer resides over the base layer. The emitter layer includes an inner emitter region that is ring-shaped and resides over and extends substantially around an outer periphery of the inner base region. The emitter layer further includes an outer emitter region that is ring-shaped and resides over and extends substantially around the outer base region. A connector structure electrically couples the inner emitter region with the outer base region. | 12-24-2015 |
20160197116 | CMOS IMAGE SENSOR | 07-07-2016 |
20190148570 | IMAGE SENSOR WITH AN ABSORPTION ENHANCEMENT SEMICONDUCTOR LAYER | 05-16-2019 |