Entries |
Document | Title | Date |
20080197340 | MULTIPLE-WAVELENGTH OPTO-ELECTRONIC DEVICE INCLUDING A SUPERLATTICE - A multiple-wavelength opto-electronic device may include a substrate and a plurality of active optical devices carried by the substrate and operating at different respective wavelengths. Each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. | 08-21-2008 |
20080197341 | METHOD FOR MAKING A MULTIPLE-WAVELENGTH OPTO-ELECTRONIC DEVICE INCLUDING A SUPERLATTICE - A method for making a multiple-wavelength opto-electronic device which may include providing a substrates and forming a plurality of active optical devices to be carried by the substrate and operating at different respective wavelengths. Moreover, each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. | 08-21-2008 |
20090039340 | METHOD AND APPARATUS FOR ACQUIRING PHYSICAL INFORMATION, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING ARRAY OF A PLURALITY OF UNIT COMPONENTS FOR DETECTING PHYSICAL QUANTITY DISTRIBUTION, LIGHT-RECEIVING DEVICE AND MANUFACTURING METHOD THEREFOR, AND SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR - Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of a plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefore are provided. The method for acquiring physical information uses a device for detecting a physical distribution, the device including a detecting part for detecting an electromagnetic wave and a unit signal generating part for generating a corresponding unit signal on the basis of the quantity of the detected electromagnetic wave. The detecting part includes a stacked member having a structure in which a plurality of layers having different refractive indexes between the adjacent ones and each having a predetermined thickness is stacked, the stacked member being provided on the incident surface side to which the electromagnetic wave is incident and having the characteristic that a predetermined wavelength region component of the electromagnetic wave is reflected, and the remainder is transmitted. | 02-12-2009 |
20090302309 | Superlattice Photodiodes With Polyimide Surface Passivation - The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. | 12-10-2009 |
20100006822 | COMPLEMENTARY BARRIER INFRARED DETECTOR (CBIRD) - An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier. | 01-14-2010 |
20100032651 | QUANTUM DOT INFRARED PHOTODETECTOR - A quantum dot infrared photodetector includes a quantum dot structure including intermediate layers, and a quantum dot layer sandwiched between the intermediate layers and including quantum dots whose energy potential is low for carriers, the intermediate layers and the quantum dots being formed of a III-V compound semiconductor with the V element being As, and an AlAs layer being provided on one of the interfaces between the intermediate layers and the quantum dot layer including the quantum dots and covering at least the quantum dots. | 02-11-2010 |
20100032652 | INFRARED PHOTODETECTOR - An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer. | 02-11-2010 |
20100044676 | Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 02-25-2010 |
20100044677 | PHOTODIODE ARRAY, METHOD OF MANUFACTURING THE SAME, AND DETECTING DEVICE - A photodiode array includes a p-side electrode provided on each p-type region formed by selective diffusion and an n-side electrode connected to a non-growth part of an InP substrate and extends to the top surface side of an epitaxial multilayer. A wall surface of an edge at the non-growth part side of the epitaxial multilayer is a smooth surface. A lattice defect density in a portion of the edge of the epitaxial multilayer is higher than a lattice defect density in the inside of the epitaxial multilayer. Furthermore, the non-growth part of the InP substrate to which the n-side electrode is connected has a flat surface continuous from the inside of the InP substrate. | 02-25-2010 |
20100051906 | SEMICONDUCTOR DEVICE - A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal. | 03-04-2010 |
20100065819 | Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same - A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described. | 03-18-2010 |
20100072457 | LIGHT-RECEIVING DEVICE - A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less. | 03-25-2010 |
20100117060 | Quantum dot infrared photodetector apparatus - The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device comprises a substrate, a first contact layer formed on the substrate, an active layer formed on the first contact layer, a barrier layer formed on the active layer and a second contact layer formed on the barrier layer, wherein the active layer comprises multiple quantum dot layers. | 05-13-2010 |
20100123120 | A SINGLE-PHOTON DETECTOR WITH A QUANTUM DOT AND A NANO-INJECTOR - A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/AlInGaAs/AlGaAsSb layers, capable of spatially separating the electron and the hole of an photo-generated electron-hole pair in one layer, transporting one of the electron and the hole of the photo-generated electron-hole pair into another layer, focalizing it into a desired volume and trapping it therein, the desired volume having a dimension in a scale of nanometers to reduce its capacitance and increase the change of potential for a trapped carrier, and a nano-injector, capable of injecting carriers into the plurality of InP/AlInGaAs/AlGaAsSb layers, where the carrier transit time in the nano-injector is much shorter than the carrier recombination time therein, thereby causing a very large carrier recycling effect. | 05-20-2010 |
20100123121 | Thyristor Radiation Detector Array and Applications Thereof - An array of thyristor detector devices is provided having an epitaxial growth structure with complementary types of modulation doped quantum well interfaces located between a P+ layer and an N+ layer. The thyristor detector devices operate over successive cycles that each include a sequence of two distinct modes: a setup mode and a signal acquisition mode. During the setup mode, the n-type quantum well interface and/or the p-type quantum well interface is(are) substantially emptied of charge. During the signal acquisition mode, photocurrent is generated by the thyristor detector device in response to the absorption of incident electromagnetic radiation therein, which can induce the thyristor detector device to switch from an OFF state to an ON state. The OFF/ON state of the thyristor detector device produces an output digital electrical data that corresponds to the amount of incident radiation absorbed by the thyristor detector device during the signal acquisition mode of the current cycle. In the preferred embodiment, the array of thyristor detector devices is part of a monolithic integrated circuit that includes additional electronic circuitry and/or optical components. Moreover, the array of thyristor detector devices is preferably part of a monolithic integrated circuit for high angular resolution laser irradiation detection. | 05-20-2010 |
20100171097 | DETECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the light-receiving element array and/or the read-out circuit multiplexer on which the bumps are provided, and pressing a flat plate on the tops of the bumps and deforming the bumps until the flat plate comes in contact with the end of the bump height adjusting member. | 07-08-2010 |
20100181552 | METHOD AND APPARATUS FOR INFRARED DETECTION AND DISPLAY - Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device. | 07-22-2010 |
20100187501 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode. | 07-29-2010 |
20100295019 | NANOWIRE PHOTODETECTOR AND IMAGE SENSOR WITH INTERNAL GAIN - A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetectors, with groups of photodetectors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures. The ID nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the ID nanostructures in predetermined, registered positions on the substrate. | 11-25-2010 |
20100301309 | LATERAL COLLECTION ARCHITECTURE FOR SLS DETECTORS - Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of the layers through the layers at selected regions to disorder the superlattice and create diode junctions oriented transversely to the naturally enhanced lateral mobility of photogenerated charge carriers within the superlattice. The diode junctions are terminated at a top surface of the photodetector within an SLS layer of wide bandgap material to minimize unwanted currents. A related architecture disorders the superlattice of topmost SLS layers by diffusing therethrough a dopant configured as a grid and penetrating to a lower SLS layer having the same carrier type as the dopant and opposite that of the topmost layers to isolate pixels within the topmost layers. Ohmic contacts may be deposited on doped regions, pixels, and substrate to provide desired external connections. | 12-02-2010 |
20100320444 | Integrated Image Sensor System on Common Substrate - It is highly desirable to design a monolithic image sensor (and array), which could offer high quantum efficiency over broad spectral ranges, and the possibility to rapidly and randomly address any element in the array. This invention utilizes the growth of semiconductor nanowires such as Si, Ge, Si:Ge, ZnO, or their alloys based nanowires on standard substrates to create multispectral image sensors and photovoltaic cells having these highly desirable features. | 12-23-2010 |
20110024724 | MULTI-LAYERED ELECTRO-OPTIC DEVICES - A laminate film includes a plurality of planar photovoltaic semi-transparent modules disposed one on top of another and laminated to each other. Each of the modules includes a substrate, first and second conductive layers and at least first and second semiconductor layers disposed between the conductive layers. The first and second semiconductor layers define a junction at an interface therebetween. At least one of the junctions is configured to convert a first spectral portion of optical energy into an electrical voltage and transmit a second spectral portion of optical energy to another of the junctions that is configured to convert at least a portion of the second spectral portion of optical energy into an electrical voltage. | 02-03-2011 |
20110042647 | CORRUGATED-QUANTUM WELL INFRARED PHOTODETECTOR WITH REFLECTIVE SIDEWALL AND METHOD - A quantum well infrared photodetector comprising a tunable voltage source; first and second contacts operatively connected to the tunable voltage source; a substantially-transparent substrate adapted to admit light; first and second layers operatively connected to the first and second contacts; a quantum well layer positioned between the first and second layers; light admitted through the substantially transparent substrate entering at least one of the first and second layers and passing through the quantum well layer; at least one side wall adjacent to at least one of the first and second layers and the quantum well layer; the at least one side wall being substantially non-parallel to the incident light; the at least one sidewall comprising reflective layer which reflects light into the quantum well layer for absorption. A preferred method for improving the reflectivity of a quantum well infrared photodetector comprises forming a first sidewall layer on the sidewalls of the corrugated quantum well infrared photodetector; forming a second sidewall layer on the sidewalls of the corrugated quantum well infrared photodetector; the second sidewall layer being formed of a reflective material and the first sidewall layer operating to electrically isolate the reflective material from at least one of the first and second contact layers; whereby the reflective metal operates to reflect light rays into corrugated quantum well infrared photodetector device and to substantially prevent infrared rays in environment from entering through the sidewalls. | 02-24-2011 |
20110089402 | Composite Nanorod-Based Structures for Generating Electricity - One aspect of the invention involves an article of manufacture that includes a dielectric layer with an array of pores, and an array of nanowires at least partially contained within the array of pores. A respective nanowire in the array of nanowires is formed within a respective pore in the array of pores. Nanowires in the array of nanowires include a core semiconducting region with a first type of, a shell semiconducting region with a second type of doping, and a junction region between the core semiconducting region and the shell semiconducting. Additionally, the article of manufacture includes a first conducting layer electrically coupled to a plurality of shell semiconducting regions for a plurality of nanowires in the array of nanowires, as well as a second conducting layer electrically coupled to a plurality of core semiconducting regions for a plurality of nanowires in the array of nanowires. | 04-21-2011 |
20110095266 | PHOTODETECTOR AND METHOD FOR THE PRODUCTION THEREOF - X-ray radiation is converted by a photodetector into an electric charge. Nanoparticles are incorporated into the active organic layer of the photodetector. | 04-28-2011 |
20110101306 | PHOTODIODE ARRAY, METHOD FOR MANUFACTURING PHOTODIODE ARRAY, EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array | 05-05-2011 |
20110147707 | DETECTION DEVICE, PHOTODIODE ARRAY, AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm. | 06-23-2011 |
20110193063 | MULTIPLE-WAVELENGTH OPTO-ELECTRONIC DEVICE INCLUDING A SUPERLATTICE - A multiple-wavelength opto-electronic device may include a substrate and a plurality of active optical devices carried by the substrate and operating at different respective wavelengths. Each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. | 08-11-2011 |
20110210313 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure | 09-01-2011 |
20110278541 | COLOR-SELECTIVE QUANTUM DOT PHOTODETECTORS - Photoconductive optoelectronic devices, such as photodetectors and photovoltaics, are provided. The devices are sensitized to a particular wavelength (or range of wavelengths) of electromagnetic radiation such that the devices provide increased performance efficiency (e.g., external quantum efficiency) at the wavelength. The devices include a photoconductive semiconductor layer spanning an electrode gap between two electrodes to provide a photoconductive electrical conduit. Abutting the semiconductor layer is a plurality of plasmonic nanoparticles. The improved efficiency of the devices results from wavelength-dependent plasmonic enhancement of device photosensitivity by the plasmonic nanoparticles. | 11-17-2011 |
20110297915 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 12-08-2011 |
20110303897 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 12-15-2011 |
20110303898 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 12-15-2011 |
20110309331 | SOLAR BLIND ULTRA VIOLET (UV) DETECTOR AND FABRICATION METHODS OF THE SAME - Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate. | 12-22-2011 |
20120032147 | BIOLOGICAL COMPONENT DETECTION DEVICE - Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer | 02-09-2012 |
20120032148 | MULTI-JUNCTION PHOTOVOLTAIC CELL WITH NANOWIRES - A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate ( | 02-09-2012 |
20120037887 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 02-16-2012 |
20120056160 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 03-08-2012 |
20120085990 | SUPERLATTICE QUANTUM WELL INFRARED DETECTOR HAVING EXPOSED LAYERS - In at least one embodiment, an infrared (IR) detector is provided. The IR detector comprises a thermal sensing element that includes an absorber that is formed of a superlattice quantum well structure. The superlattice quantum well structure includes a first layer and a second layer, the first layer being arranged to extend in a first plane and the second layer being positioned proximate to the first layer and extending in the first plane. The second layer extending further than the first layer in the first plane such that a portion thereof is exposed for receiving a conductive material to increase electrical conductivity in the detector. | 04-12-2012 |
20120112165 | Optical Device - An improved optoelectronic device is described, which employs optically responsive nanoparticles and utilises a non-radiative energy transfer mechanism. The nanoparticles are disposed on the sidewalls of one or more cavities, which extend from the surface of the device through the electronic structure and penetrate the energy transfer region. The nanoparticles are located in close spatial proximity to an energy transfer region, whereby energy is transferred non-radiatively to or from the electronic structure through non-contact dipole-dipole interaction. According to the mode of operation, the device can absorb light energy received from the device surface via the cavity and then transfer this non-radiatively or can transfer energy non-radiatively and then emit light energy towards the surface of the device via the cavity. As such, the deice finds application in light emitting devices, photovoltaic (solar) cells, displays, photodetectors, lasers and single photon devices. | 05-10-2012 |
20120126204 | IR PHOTODETECTORS WITH HIGH DETECTIVITY AT LOW DRIVE VOLTAGE - An IR photodetector with high detectivity comprises an IR sensitizing layer situated between an electron blocking layer (EBL) and a hole blocking layer (HBL). The EBL and HBL significantly reduce the dark current, resulting in a high detectivity while allowing use of a low applied voltage to the IR photodetector. | 05-24-2012 |
20120132891 | PRECISION QUANTUM DOT CLUSTERS - Precision quantum dot clusters and methods for producing and tuning quantum dot clusters are described herein. Also described herein are materials and devices, including photovoltaic devices, that may include one or more quantum dot clusters. | 05-31-2012 |
20120138898 | SENSOR, SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER - A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat. | 06-07-2012 |
20120145996 | BARRIER INFRARED DETECTOR - A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be “chirped” (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays. | 06-14-2012 |
20120168720 | GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER - An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer | 07-05-2012 |
20120205624 | PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 08-16-2012 |
20120217477 | UP-CONVERSION DEVICE WITH BROAD BAND ABSORBER - Embodiments of the invention are directed to an IR photodetector that broadly absorbs electromagnetic radiation including at least a portion of the near infrared (NIR) spectrum. The IR photodetector comprises polydispersed QDs of PbS and/or PbSe. The IR photodetector can be included as a layer in an up-conversion device when coupled to a light emitting diode (LED) according to an embodiment of the invention. | 08-30-2012 |
20120217478 | SEMICONDUCTOR DEVICE, OPTICAL SENSOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device | 08-30-2012 |
20120223290 | LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY - A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multi- quantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×10 | 09-06-2012 |
20120223291 | QUANTUM DOT-FULLERENE JUNCTION BASED PHOTODETECTORS - A photodetector includes one or more photodiodes and a signal processing circuit. Each photodiode includes a transparent first electrode, a second electrode, and a heterojunction interposed between the first electrode and the second electrode. Each heterojunction includes a quantum dot layer and a fullerene layer disposed directly on the quantum dot layer. The signal processing circuit is in signal communication each the second electrode. The photodetector may be responsive to wavelengths in the infrared, visible, and/or ultraviolet ranges. The quantum dot layer may be treated with a chemistry that increases the charge carrier mobility of the quantum dot layer. | 09-06-2012 |
20120241723 | QUANTUM DOT-FULLERENE JUNCTION OPTOELECTRONIC DEVICES - An optoelectronic device includes a first electrode, a quantum dot layer disposed on the first electrode including a plurality of quantum dots, a fullerene layer disposed directly on the quantum dot layer wherein the quantum dot layer and the fullerene layer form an electronic heterojunction, and a second electrode disposed on the fullerene layer. The device may include an electron blocking layer. The quantum dot layer may be modified by a chemical treatment to exhibit in creased charge carrier mobility. | 09-27-2012 |
20120248412 | Vertically Correlated Clusters of Charged Quantum Dots for Optoelectronic Devices, and Methods of Making Same - Devices (e.g., optoelectronic devices such as solar cells and infrared or THz photodetectors) with a nanomaterial having vertically correlated quantum dots with built-in charge (VC Q-BIC) and methods of making such devices. The VC Q-BIC material has two or more quantum dot layers, where the layers have quantum dots (individual quantum dots or quantum dot clusters) in a semiconductor material, and adjacent quantum dot layers are separated by a spacer layer of doped semiconductor material. The VC-QBIC nanomaterial provides long photocarrier lifetime, which improves the responsivity and sensitivity of detectors or conversion efficiency in solar cells as compared to previous comparable devices. | 10-04-2012 |
20120280209 | OPTOELECTRONIC DEVICES EMPLOYING PLASMON INDUCED CURRENTS - An electro-optical device includes a substrate on which first and second electrodes are formed. A plurality of nanoparticles are arrayed on the surface of the substrate between the first and second electrodes. The arrayed nanoparticles exhibit plasmonic activity in at least one wavelength band. A plurality of linking molecules are coupled between respective adjacent ones of the nanoparticles and between each of the electrodes and nanoparticles that are adjacent to the electrodes. The linking molecules are selected to exhibit photo-activity that is complementary to the arrayed nanoparticles. | 11-08-2012 |
20120298957 | LIGHT RECEIVING ELEMENT, LIGHT RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTING DEVICE, OPTICAL SENSOR DEVICE, AND METHOD FOR PRODUCING LIGHT RECEIVING ELEMENT ARRAY - The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array | 11-29-2012 |
20120326124 | FRONTSIDE-ILLUMINATED INVERTED QUANTUM WELL INFRARED PHOTODETECTOR DEVICES - A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array. | 12-27-2012 |
20130001514 | Method and Apparatus for Converting Photon Energy to Electrical Energy - In accordance with an example embodiment of the present invention, an apparatus including a nanopillar and a graphene film, the graphene film being in contact with a first end of the nanopillar, wherein the nanopillar includes a metal, the contact being configured to form an intrinsic field region in the graphene film, and wherein the apparatus is configured to generate a photocurrent from a photogenerated charge carrier in the intrinsic field region. | 01-03-2013 |
20130020556 | HYBRID SILICON EVANESCENT PHOTODETECTORS - Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected. | 01-24-2013 |
20130020557 | NANOSTRUCTURED TRANSPARENT CONDUCTING ELECTRODE - An optoelectronic device is disclosed. The optoelectronic device comprises an active layer and a conducting network layer which comprises a plurality of interconnected metal nanowires and a layer of transparent conducting material in electrical contact with the active layer. The conducting network layer of interconnected metal nanowires is disposed on the layer of transparent conducting material. Above the active layer, light passes through the transparent conducting material to reach the active layer. Each of the nanowires has an elongate, non-spherical configuration and aggregate nanowire length oriented to extend laterally through a plane of the conducting network layer. This provides lengthwise contact of the nanowires to the transparent conducting material. | 01-24-2013 |
20130032782 | OPTOELECTRONIC PLATFORM WITH CARBON BASED CONDUCTOR AND QUANTUM DOTS AND TRANSISTOR COMPRISING SUCH A PLATFORM - The invention comprises an optoelectronic platform with a carbon-based conduction layer and a layer of colloidal quantum dots on top as light absorbing material. Photoconductive gain on the order of 10 | 02-07-2013 |
20130062593 | FRONTSIDE-ILLUMINATED BARRIER INFRARED PHOTODETECTOR DEVICE AND METHODS OF FABRICATING THE SAME - Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate. | 03-14-2013 |
20130075699 | NANO-STRUCTURE ARRAYS FOR EMR IMAGING - An electro-magnetic radiation detector is described. The electro-magnetic radiation detector includes a detector material and a voltage biasing element. The detector material includes a substantially regular array of nano-particles embedded in a matrix material. The voltage biasing element is configured to apply a bias voltage to the matrix material such that electrical current is directly generated based on a cooperative plasmon effect in the detector material when electro-magnetic radiation in a predetermined wavelength range is incident upon the detector material, where the dominant mechanism for decay in the cooperative plasmon effect is non-radiative. | 03-28-2013 |
20130082241 | Graphene on Semiconductor Detector - Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer. | 04-04-2013 |
20130099203 | PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR - A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6. | 04-25-2013 |
20130119346 | IRON PYRITE NANOCRYSTALS - An apparatus includes a nanocrystal. The nanocrystal includes a core including FeS | 05-16-2013 |
20130146844 | LIGHT DETECTOR AND METHOD FOR PRODUCING LIGHT DETECTOR - A first electrode layer is disposed on a substrate and a first active layer is disposed thereon. The first active layer includes a first barrier layer and a plurality of first quantum dots that are distributed in the first barrier layer and have a band gap narrower than that of the first barrier layer. A second electrode layer is disposed on the first active layer. On the second active layer, a second active layer is disposed. The second active layer includes a second barrier layer and a plurality of second quantum dots that are distributed in the second barrier layer and have a band gap narrower than that of the second barrier layer. A third electrode layer is disposed on the second active layer. The first quantum dots are larger than the second quantum dots. | 06-13-2013 |
20130175500 | TRANSMISSIVE IMAGE MODULATOR INCLUDING STACKED DIODE STRUCTURE HAVING MULTI ABSORPTION MODES - A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant. | 07-11-2013 |
20130228749 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described. | 09-05-2013 |
20130240837 | ROOM TEMPERATURE NANOWIRE IR, VISIBLE AND UV PHOTODETECTORS - Room temperature IR and UV photodetectors are provided by electrochemical self-assembly of nanowires. The detectivity of such IR detectors is up to ten times better than the state of the art. Broad peaks are observed in the room temperature absorption spectra of 10-nm diameter nanowires of CdSe and ZnS at photon energies close to the bandgap energy, indicating that the detectors are frequency selective and preferably detect light of specific frequencies. Provided is a photodetector comprising: an aluminum substrate; a layer of insulator disposed on the aluminum substrate and comprising an array of columnar pores; a plurality of semiconductor nanowires disposed within the pores and standing vertically relative to the aluminum substrate; a layer of nickel disposed in operable communication with one or more of the semiconductor nanowires; and wire leads in operable communication with the aluminum substrate and the layer of nickel for connection with an electrical circuit. | 09-19-2013 |
20130248821 | LIGHT RECEIVING ELEMENT, SEMICONDUCTOR EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE LIGHT RECEIVING ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR EPITAXIAL WAFER, AND DETECTING DEVICE - A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 μm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer. | 09-26-2013 |
20130264542 | Multiwall Carbon Nanotube Opto-Electronic Devices - A high-sensitivity detector for opto-electronic detection using multiwall carbon nanotubes (MWCNTs) is provided. More specifically, multiwall carbon nanotube films demonstrate an infrared bolometric photoresponse higher than SWCNT films at room temperature. The observed D* exceeding 3.3×10 | 10-10-2013 |
20130264543 | PHOTODETECTION DEVICE - The present invention relates to a photodetector for detecting an infrared-light emission having a given wavelength (λ) comprising a multilayer with: a layer ( | 10-10-2013 |
20130292646 | LIGHT RECEIVING DEVICE, OPTICAL DEVICE, AND METHOD FOR PRODUCING LIGHT RECEIVING DEVICE - A light receiving device includes a microlens | 11-07-2013 |
20130299781 | SUPERLATTICE QUANTUM WELL INFRARED DETECTOR - In at least one embodiment, an infrared (IR) sensor comprising a thermopile is provided. The thermopile comprises a substrate and an absorber. The absorber is positioned above the substrate and a gap is formed between the absorber and the substrate. The absorber receives IR from a scene and generates an electrical output indicative of a temperature of the scene. The absorber is formed of a super lattice quantum well structure such that the absorber is thermally isolated from the substrate. In another embodiment, a method for forming an infrared (IR) detector is provided. The method comprises forming a substrate and forming an absorber with a plurality of alternating first and second layers with a super lattice quantum well structure. The method further comprises positioning the absorber about the substrate such that a gap is formed to cause the absorber to be suspended about the substrate. | 11-14-2013 |
20130306936 | OPTIMIZED ARRANGEMENT OF TRIAZOLE PARTICLES - An electrical device in provided having two electrodes separated from one another, wherein one temperature controlled electronic spin-state transition particle is in direct contact with each of the two electrodes, the particle being of the ionic type and containing a transition metal bearing a cationic charge. | 11-21-2013 |
20130313521 | PHOTODIODE AND METHOD FOR PRODUCING THE SAME - An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode ( | 11-28-2013 |
20130341594 | SINGLE-PHOTON NANO-INJECTION DETECTORS - Single-photon detectors, arrays of single-photon detectors, methods of using the single-photon detectors and methods of fabricating the single-photon detectors are provided. The single-photon detectors combine the efficiency of a large absorbing volume with the sensitivity of nanometer-scale carrier injectors, called “nanoinjectors”. The photon detectors are able to achieve single-photon counting with extremely high quantum efficiency, low dark count rates, and high bandwidths. | 12-26-2013 |
20140014902 | Photodiode and Method for Making the Same - A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including a number of quantum nanomaterials having a ligand coating, and applying a thin-film oxide layer over the quantum nanomaterial layer. | 01-16-2014 |
20140048772 | LOW-VOLTAGE HIGH-GAIN HIGH-SPEED GERMANIUM PHOTO DETECTOR AND METHOD OF FABRICATING THE SAME - Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires. | 02-20-2014 |
20140054545 | PHOTODETECTOR, EPITAXIAL WAFER AND METHOD FOR PRODUCING THE SAME - Provided are a photodetector in which, in a III-V semiconductor having sensitivity in the near-infrared region to the far-infrared region, the carrier concentration can be controlled with high accuracy; an epitaxial wafer serving as a material of the photodetector; and a method for producing the epitaxial wafer. Included are a substrate formed of a III-V compound semiconductor; an absorption layer configured to absorb light; a window layer having a larger bandgap energy than the absorption layer; and a p-n junction positioned at least in the absorption layer, wherein the window layer has a surface having a root-mean-square surface roughness of 10 nm or more and 40 nm or less. | 02-27-2014 |
20140061588 | GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER - An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer | 03-06-2014 |
20140103295 | NANOWIRE PHOTODETECTOR AND IMAGE SENSOR WITH INTERNAL GAIN - A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire photodetectors include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate. | 04-17-2014 |
20140138622 | Photodetection - Apparatus and methods are provided. A first apparatus includes: a semiconductor film; and at least one semiconductor nanostructure, including a heterojunction, configured to modulate the conductivity of the semiconductor film by causing photo-generated carriers to transfer into the semiconductor film from the at least one semiconductor nanostructure. A second apparatus includes: a semimetal film; and at least one semiconductor nanostructure, including a heterojunction, configured to generate carrier pairs in the semimetal film via resonant energy transfer, and configured to generate an external electric field for separating the generated carrier pairs in the semimetal film. | 05-22-2014 |
20140191195 | FOCAL PLANE ARRAY WITH PIXELS DEFINED BY MODULATION OF SURFACE FERMI ENERGY - Pixels in a focal plane array are defined by controlled variation of the Fermi energy at the surface of the detector array. Varying the chemical composition of the semiconductor at the detector surface produces a corresponding variation in the surface Fermi energy which produces a corresponding variation in the electric field and electrostatic potential in the bulk semiconductor below the surface. This defines pixels by having one Fermi energy at the surface of each pixel and a different Fermi energy at the surface between pixels. Fermi energy modulation can also be controlled by applying an electrostatic potential voltage V1 to the metal pad defining each pixel, and applying a different electrostatic potential voltage V2 to an interconnected metal grid covering the gaps between all the pixel metal pads. Methods obviate the need to etch deep trenches between pixels, resulting in a more manufacturable quasi-planar process without sacrificing performance. | 07-10-2014 |
20140191196 | OPTICAL DEVICE INCLUDING THREE COUPLED QUANTUM WELL STRUCTURE - Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers. | 07-10-2014 |
20140231750 | QUANTUM WELL INFRARED PHOTODETECTORS USING II-VI MATERIAL SYSTEMS - A quantum well infrared photodetector (QWIP) and method of making is disclosed. The QWIP includes a plurality of epi-layers formed into multiple periods of quantum wells, each of the quantum wells being separated by a barrier, the quantum wells and barriers being formed of II-VI semiconductor materials. A multiple wavelength QWIP is also disclosed and includes a plurality of QWIPs stacked onto a single epitaxial structure, in which the different QWIPs are designed to respond at different wavelengths. A dual wavelength QWIP is also disclosed and includes two QWIPs stacked onto a single epitaxial structure, in which one QWIP is designed to respond at 10 μm and the other at 3-5 μm wavelengths. | 08-21-2014 |
20140252313 | NANOLENS ARRAYS IN NANOPILLAR OPTOELECTRONIC DEVICES - An optoelectronic device includes: (1) a top transparent electrode; (2) a bottom electrode spaced apart from the top transparent electrode; and (3) nanopillars arranged between the top transparent electrode and the bottom electrode such that each of the nanopillars includes a top end electrically connected to the top transparent electrode and a bottom end electrically connected to the bottom electrode. The top transparent electrode is shaped to provide optical elements each arranged to couple light into or out of a respective one of the nanopillars. | 09-11-2014 |
20140252314 | NANOWIRE PHOTO-DETECTOR GROWN ON A BACK-SIDE ILLUMINATED IMAGE SENSOR - An embodiment relates to a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. | 09-11-2014 |
20140264275 | PHOTODETECTORS BASED ON DOUBLE LAYER HETEROSTRUCTURES - A photodetector is provided with a thin film double layer heterostructure. The photodetector is comprised of: a substrate; a channel layer of a transistor deposited onto a top surface of the substrate; a source layer of the transistor deposited on the top surface of the substrate; a drain layer of the transistor deposited on the top surface of the substrate, the source layer and the drain layer disposed on opposing sides of the channel layer; a barrier layer deposited onto the channel layer; and a light absorbing layer deposited on the barrier layer. The light absorbing layer is configured to absorb light and, in response to light incident on the light absorbing layer, electrical conductance of the channel layer is changed through hot carrier tunneling from the light absorbing layer to the channel layer. | 09-18-2014 |
20140306182 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode. | 10-16-2014 |
20140312303 | SEMICONDUCTOR BARRIER PHOTO-DETECTOR - The present invention discloses a photo-detector comprising: an n-type photon absorbing layer of a first energy bandgap; a middle barrier layer, an intermediate layer is a semiconductor structure; and a contact layer of a third energy bandgap, wherein the layer materials are selected such that the first energy bandgap of the photon absorbing layer is narrower than that of said middle barrier layer; wherein the material composition and thickness of said intermediate layer are selected such that the valence band of the intermediate layer lies above the valence band in the barrier layer to create an efficient trapping and transfer of minority carriers from the barrier layer to the contact layer such that a tunnel current through the barrier layer from the contact layer to the photon absorbing layer is less than a dark current in the photo-detector and the dark current from the photon-absorbing layer to said middle barrier layer is essentially diffusion limited and is due to the unimpeded flow of minority carriers, thus reducing generation-recombination (GR) noise of the photo-detector. The principles of the present invention also apply to inverted polarity structures of the form pBp in which all the doping polarities and band alignments described above are reversed. | 10-23-2014 |
20140312304 | LIGHT RECEIVING ELEMENT, SEMICONDUCTOR EPITAXIAL WAFER, DETECTING DEVICE, AND METHOD FOR MANUFACTURING LIGHT RECEIVING ELEMENT - Provided are a light receiving element etc. which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency. The light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a middle layer that is epitaxially grown on the InP substrate, a GaSb buffer layer located in contact with the middle layer, and a light-receiving layer that is epitaxially grown on the GaSb buffer layer and that has a type-II multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the middle layer while exceeding a range of a normal lattice-matching condition. | 10-23-2014 |
20140319463 | EPITAXIAL WAFER, METHOD FOR PRODUCING THE SAME, SEMICONDUCTOR ELEMENT, AND OPTICAL SENSOR DEVICE - An epitaxial wafer of the present invention includes a substrate composed of a III-V compound semiconductor, a multiple quantum well structure composed of a III-V compound semiconductor and located on the substrate, and a top layer composed of a III-V compound semiconductor and located on the multiple quantum well structure. The substrate has a plane orientation of ( | 10-30-2014 |
20140319464 | LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SAME - A light-receiving element includes a light-receiving layer for receiving light, the light-receiving layer being disposed on a semiconductor substrate, a contact layer disposed on the light-receiving layer, and a pixel electrode that is in ohmic contact with the contact layer. A back surface of the semiconductor substrate functions as a light-incident surface, and a reaction-preventing film for preventing a chemical reaction between the contact layer and the pixel electrode is interposed in a predetermined region between the contact layer and the pixel electrode. | 10-30-2014 |
20140319465 | PHOTODETECTION DEVICE - The invention relates to a photodetector for infrared light radiation having a given wavelength (λ), including a stack of layers consisting of: a continuous layer ( | 10-30-2014 |
20140332755 | DIODE BARRIER INFRARED DETECTOR DEVICES AND SUPERLATTICE BARRIER STRUCTURES - Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer. | 11-13-2014 |
20140353584 | EPITAXIAL WAFER, METHOD FOR PRODUCING THE SAME, PHOTODIODE, AND OPTICAL SENSOR DEVICE - A method for producing an epitaxial wafer includes a step of growing an epitaxial layer structure on a III-V semiconductor substrate, the epitaxial layer structure including a III-V semiconductor multiple-quantum well and a III-V semiconductor surface layer, wherein the step of growing the epitaxial layer structure on the substrate is performed such that a lattice mismatch Δω of the multiple-quantum well with respect to the substrate satisfies a range of −0.13%≦Δω<0% or 0%<Δω≦+0.13%, the range having a center displaced from zero, and an X-ray rocking curve in a zero-order diffraction peak derived from the multiple-quantum well has a full width at half maximum (FWHM) of 30 seconds or less. | 12-04-2014 |
20140353585 | FRONTSIDE-ILLUMINATED BARRIER INFRARED PHOTODETECTOR DEVICE AND METHODS OF FABRICATING THE SAME - Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate. | 12-04-2014 |
20140361249 | QUANTUM DOT INFRARED PHOTODETECTOR - A quantum dot infrared photodetector (QDIP) that can enhance the photocurrent to a greater level than the dark current and/or can be operated at high temperatures is disclosed. The quantum dot infrared photodetector comprises at least one quantum well stack and a plurality of quantum dot layers. The quantum well stack is disposed between the pluralities of quantum dot layers. The quantum well stack comprises two spacer layers and a carrier supplying layer. The carrier supplying layer is disposed between the spacer layers. When the quantum dot infrared photodetector is applied with two bias voltages respectively, the carrier supplying layer supplies carriers to the to quantum dot layers. | 12-11-2014 |
20150028286 | METHOD FOR GROWING GERMANIUM/SILICON-GERMANIUM SUPERLATTICE - A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth. | 01-29-2015 |
20150028287 | DEVICE WITH QUANTUM WELL LAYER - A device for guiding and absorbing electromagnetic radiation, the device including: absorbing means for absorbing the electromagnetic radiation; and a coupled to the absorbing means for guiding the electromagnetic radiation to the absorbing means, wherein the waveguide and the absorbing means are formed from a structure including a first cladding layer, a second cladding layer over the first cladding layer, and a quantum-well layer between the first and second cladding layers, the quantum-well layer being formed of a material having a different composition to the first and second cladding layers, wherein the thickness and the composition of the quantum-well layer is optimised to provide an acceptable level of absorption of electromagnetic radiation in the waveguide while providing an appropriate band gap for absorption of the electromagnetic radiation in the absorbing means. | 01-29-2015 |
20150041761 | Backside Illuminated Photo-Sensitive Device with Gradated Buffer Layer - A method for forming a backside illuminated photo-sensitive device includes forming a gradated sacrificial buffer layer onto a sacrificial substrate, forming a uniform layer onto the gradated sacrificial buffer layer, forming a second gradated buffer layer onto the uniform layer, forming a silicon layer onto the second gradated buffer layer, bonding a device layer to the silicon layer, and removing the gradated sacrificial buffer layer and the sacrificial substrate. | 02-12-2015 |
20150053922 | PHOTODETECTOR - A photodetector | 02-26-2015 |
20150053923 | BACK SIDE ILLUMINATION PHOTODIODE OF HIGH QUANTUM EFFICIENCY - A back side illumination photodiode includes a light-receiving back side surface of a semiconductor material substrate. An area of the light-receiving back side surface includes a recess. The recess is filled with a material having an optical index that is lower than an optical index of the semiconductor material substrate. Both the substrate and the filling material are transparent to an operating wavelength of the photodiode. The recess may be formed to have a ring shape. | 02-26-2015 |
20150053924 | SPAD PHOTODIODE OF HIGH QUANTUM EFFICIENCY - A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node). | 02-26-2015 |
20150097157 | INFRARED SOLID-STATE IMAGING DEVICE - An infrared solid-state imaging device with unit detecting sections in a matrix form, wherein the unit detecting section includes: an infrared light guiding layer; a first reflecting layer on the infrared light guiding layer; an infrared light detecting section on the first reflecting layer, the infrared light detecting section including an infrared light absorbing layer and upper and lower contact layers; and first metal wiring connected to the upper contact layer, wherein a side wall of the unit detecting section is inclined at an angle smaller than 45° to a normal direction, to form a groove between the adjacent unit detecting sections, a first insulating layer is provided on the side wall of the unit detecting section and second metal wiring is provided on the first insulating layer, and a refractive index of the first reflecting layer is lower than that of the lower contact layer. | 04-09-2015 |
20150108431 | MULTILAYER TRANSITION METAL DICHALCOGENIDE DEVICE, AND SEMICONDUCTOR DEVICE USING SAME - The present invention relates to a multilayer transition metal dichalcogenide device and a semiconductor device using the same, wherein the invention, preferably comprising three or more layers, is formed with a conventional single-layered transition metal chalcogenide, thereby enabling absorption of the light over a wide wavelength range from ultraviolet rays to near infrared rays. To this end, disclosed is a transition metal dichalcogenide formed to allow absorption of the light over a relatively wider wavelength range compared with a single-layered transition metal chalcogenide, and a transition metal dichalcogenide device having a semiconductor channel formed by a transition metal dichalcogenide. | 04-23-2015 |
20150115222 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer laminate in which a plurality of semiconductor layers are laminated, the semiconductor layer laminate including a light receiving layer, the light receiving layer being grown by a metal-organic vapor phase epitaxy method, the light receiving layer having a cutoff wavelength of more than or equal to 3 μm and less than or equal to 8 μm, the semiconductor device having a dark current density of less than or equal to 1×10 | 04-30-2015 |
20150123077 | OPTICAL DEVICE INCLUDING THREE-COUPLED QUANTUM WELL STRUCTURE HAVING MULTI-ENERGY LEVEL - An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer. | 05-07-2015 |
20150129838 | BARE QUANTUM DOTS SUPERLATTICE PHOTONIC DEVICES - Manipulation of the passivation ligands of colloidal quantum dots and use in QD electronics. A multi-step electrostatic process is described which creates bare QDs, followed by the formation of QD superlattice via electric and thermal stimulus. Colloidal QDs with original long ligands (i.e. oleic acid) are atomized, and loaded into a special designed tank to be washed, followed by another atomization step before entering the doping station. The final step is the deposition of bare QDs onto substrate and growth of QD superlattice. The method permits the formation of various photonic devices, such as single junction and tandem solar cells based on bare QD superlattice, photodetectors, and LEDs. The devices include a piezoelectric substrate with an electrode, and at least one layer of bare quantum dots comprising group IV-VI elements on the electrode, where the bare quantum dots have been stripped of outer-layer ligands. | 05-14-2015 |
20150144879 | PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 05-28-2015 |
20150295108 | Tunneling Barrier Infrared Detector Devices - Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer. | 10-15-2015 |
20150311366 | LIGHT RECEIVING DEVICE AND METHOD FOR MANUFACTURING LIGHT RECEIVING DEVICE - A light receiving device includes a mesa structure including a light absorption layer disposed on a semiconductor region; a passivation film disposed on a side surface of the mesa structure, the passivation film containing oxygen; and a nitriding layer disposed between the side surface of the mesa structure and the passivation film. The light absorption layer includes a super-lattice structure including first semiconductor layers and second semiconductor layers that are alternately stacked. The first semiconductor layer is made of a III-V group compound semiconductor. The second semiconductor layer is made of a III-V group compound semiconductor that is different from the III-V group compound semiconductor of the first semiconductor layer. The first semiconductor layer contains antimony as a group V constituent element. In addition, the nitriding layer is made of a nitride containing a group III constituent element of the first semiconductor layer and/or the second semiconductor layer. | 10-29-2015 |
20150325726 | ARRAY-TYPE LIGHT-RECEIVING DEVICE - An array-type light-receiving device includes a semiconductor substrate having a cleavage direction; a light-receiving surface disposed on the semiconductor substrate; and a plurality of pixels two-dimensionally arranged on the light-receiving surface in a first array direction and a second array direction, each of the pixels including a staked semiconductor layer including an optical absorption layer. The first and second array directions are tilted relative to the cleavage direction of the semiconductor substrate at a predetermined angle α, as viewed from above the light-receiving surface. In addition, the first and second array directions and the cleavage direction extend along the light-receiving surface. | 11-12-2015 |
20150349160 | Backside Illuminated Photo-Sensitive Device With Gradated Buffer Layer - A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer. | 12-03-2015 |
20160013340 | COAXIAL LITHOGRAPHY | 01-14-2016 |
20160020353 | SEMICONDUCTOR STRUCTURE - The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector. | 01-21-2016 |
20160056315 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and the like having high quantum efficiency or high sensitivity in a near-infrared to infrared region is provided. The semiconductor device includes: a substrate; a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; and a crystal-adjusting layer disposed between the substrate and the multiple quantum well structure. The crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure and is in contact with the multiple quantum well structure. | 02-25-2016 |
20160155829 | Transistors and Methods of Forming Transistors | 06-02-2016 |
20160172411 | METHOD FOR PRODUCING SEMICONDUCTOR LIGHT RECEIVING DEVICE AND SEMICONDUCTOR LIGHT RECEIVING DEVICE | 06-16-2016 |
20160197214 | LIGHT RECEIVING DEVICE AND IMAGE SENSOR | 07-07-2016 |
20160255284 | THERMOGRAPHY CAMERA TUNED TO DETECT ABSORPTION OF INFRARED RADIATION IN A SELECTED SPECTRAL BANDWIDTH | 09-01-2016 |
20160380137 | LIGHT-RECEIVING DEVICE - A light-receiving device includes: a group III-V compound semiconductor substrate having a first main surface; and a light-receiving layer formed on the first main surface, and the group III-V compound semiconductor substrate has a dislocation density of 10000 cm | 12-29-2016 |
20190148569 | In-Plane Resonant-Cavity Infrared Photodetectors with Fully-Depleted Absorbers | 05-16-2019 |