Entries |
Document | Title | Date |
20080217601 | Light emitting devices - Light-emitting devices, and related components, systems and methods are disclosed. | 09-11-2008 |
20080217602 | QUANTUM DOT LIGHT EMITTING DEVICE - An inorganic light emitting device including a transparent substrate; a first electrode; a second electrode opposed to the first electrode; a polycrystalline inorganic light emitting layer including core/shell quantum dots within an inorganic semiconductor matrix and, wherein the first electrode is transparent and formed on the transparent substrate, the polycrystalline inorganic light emitting layer is formed over the first electrode, and the second electrode is formed over the light emitting layer. | 09-11-2008 |
20080224121 | SPONTANEOUS EMISSION OF TELECOMMUNICATION WAVELENGTH EMITTERS COUPLED TO AT LEAST ONE RESONANT CAVITY - Systems and methods for devices that include a structure having at least one resonant cavity and at least one emitter having an emission frequency that is substantially in the telecommunication wavelengths are provided. The emission frequency can be coupled to the resonant frequency of resonant cavity so that emitted wavelengths corresponding to the resonant wavelengths of the resonant cavity are enhanced. Moreover, the devices of the present invention may be capable of operating at room temperatures. | 09-18-2008 |
20080230765 | LIGHT EMITTING DIODE - AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells. | 09-25-2008 |
20080230766 | Light emitting device - A light emitting element includes a group III nitride semiconductor substrate that emits a light by absorbing a UV ray and a light emitting diode structure. The light emitting diode structure is formed of a group III nitride semiconductor grown on the group III nitride semiconductor substrate, and has a p-type layer, an active layer that emits a light having a wavelength in the UV region, and an n-type layer. It is preferable that the group III nitride semiconductor substrate has a principal plane of a non-polar plane or a semi-polar plane and the group III nitride semiconductor having a same plane orientation as that of the principal plane is grown on the principal plane. | 09-25-2008 |
20080237569 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion. | 10-02-2008 |
20080237570 | LIGHT EMITTING DIODE HAVING WELL AND/OR BARRIER LAYERS WITH SUPERLATTICE STRUCTURE - A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer. | 10-02-2008 |
20080237571 | Semiconductor light emitting device and nitride semiconductor light emitting device - The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer and the active layer, and a second p-type semiconductor layer on the opposite side of the first p-type semiconductor layer from the active layer. Further, the present invention is a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a nitride semiconductor active layer, a first p-type nitride semiconductor layer between the n-type nitride semiconductor layer and the nitride semiconductor active layer, and a second p-type nitride semiconductor layer on the opposite side of the first p-type nitride semiconductor layer from the nitride semiconductor active layer. | 10-02-2008 |
20080246017 | LIGHT-EMITTING DEVICE HAVING SEMICONDUCTOR NANOCRYSTAL COMPLEXES - Light-emitting devices are provided that incorporate one or more underlying LED chips or other light sources and a layer having one or more populations of nanoparticles disposed over the light source. The nanoparticles may absorb some light emitted by the underlying source, and re-emit light at a different level. By varying the type and relative concentration of nanoparticles, different emission spectra may be achieved. White light and specialty-color emission may be achieved. Devices also may include multiple LED chips, with nanoparticles disposed over one or more underlying chips in an array. | 10-09-2008 |
20080246018 | Light-emitting device - A light-emitting device includes a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; wherein the active layer is a multi-quantum-well (MQW) active layer with a predetermined n-type doping profile. More specifically, the MQW active layer is doped with n-type dopants in the region near the p-type semiconductor layer and the n-type semiconductor layer, and the central region is not doped with the n-type dopants. | 10-09-2008 |
20080251780 | LIGHT-EMITTING DEVICE AND ARTICLE - A device comprising a light transmissive element, a nano-wire light-emitting device, and a light transmissive controller communicating with the nano-wire light-emitting device. The nano-wire light-emitting device, and the light transmissive controller, are supported by the light transmissive element. An article includes two or more of the devices. | 10-16-2008 |
20080251781 | Nitride semiconductor light emitting device - There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack. | 10-16-2008 |
20080258130 | Beveled LED Chip with Transparent Substrate - A light emitting diode is disclosed that includes a transparent (and potentially low conductivity) silicon carbide substrate, an active structure formed from the Group III nitride material system on the silicon carbide substrate, and respective ohmic contacts on the top side of the diode. The silicon carbide substrate is beveled with respect to the interface between the silicon carbide and the Group III nitride. | 10-23-2008 |
20080258131 | Light Emitting Diode - The present invention relates to a light emitting diode. More specifically, the present invention relates to a light emitting diode comprising an N-type semiconductor layer formed on a substrate, an active layer formed on the N-type semiconductor layer and a P-type semiconductor layer formed on the active layer, wherein the active layer is formed to have either a quantum well structure in which an Al | 10-23-2008 |
20080272362 | ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR WHITE EMISSION - An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided. | 11-06-2008 |
20080283818 | Semiconductor Heterostructure - A strained semiconductor heterostructure ( | 11-20-2008 |
20080283819 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A Si substrate | 11-20-2008 |
20080283820 | LED packaged structure and applications of LED as light source - LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven multi-quantum well. | 11-20-2008 |
20080283821 | Method of growing gan crystal on silicon substrate, and light emitting device and method of manufacturing thereof - Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern. | 11-20-2008 |
20080283822 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a substrate and a quantum well active layer. The quantum well active layer has a plurality of barrier layers made of GaN-based semiconductor and a well layer made of GaN-based semiconductor sandwiched between the barrier layers and has polarized charge between the barrier layer and the well layer caused by piezo polarization. The well layer has a composition modulation so that a band gap is minimum at an interface between the well layer and one of the barrier layers more far from the substrate than the other. | 11-20-2008 |
20080290336 | POLARIZED LIGHT EMITTING DIODE - Disclosed is a polarized light emitting diode (LED) capable of emitting polarized light in the front direction thereof by forming a first grating layer on a quantum well layer and forming a second grating layer on a substrate. The polarized LED includes a nitride thin film formed on a substrate, a quantum well layer formed on the nitride thin film, a first grating layer formed on the quantum well layer to allow a part of light generated from the quantum well layer to pass through the first grating layer and to reflect remaining light, and a second grating layer formed on the substrate to rotate the light reflected from the first grating layer such that the reflected light passes through the first grating layer. | 11-27-2008 |
20080303017 | Group III Nitride Compound Semiconductor Light-Emitting Device - A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer ( | 12-11-2008 |
20080303018 | Silicon-Based Light Emitting Diode for Enhancing Light Extraction Efficiency and Method of Fabricating the Same - Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics. | 12-11-2008 |
20080308787 | LIGHT EMITTING DIODE HAVING ACTIVE REGION OF MULTI QUANTUM WELL STRUCTURE - Disclosed is a light emitting diode (LED) having an active region of a multiple quantum well structure in which well layers and barrier layers are alternately laminated between a GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer. The LED includes a middle barrier layer having a bandgap relatively wider than the first barrier layer adjacent to the N-type compound semiconductor layer and the n-th barrier layer adjacent to the P-type compound semiconductor layer. The middle barrier layer is positioned between the first and n-th barrier layers. Accordingly, positions at which electrons and holes are combined in the multiple quantum well structure to emit light can be controlled, and luminous efficiency can be enhanced. Furthermore, an LED is provided with enhanced luminous efficiency using a bandgap engineering or impurity doping technique. | 12-18-2008 |
20080315176 | Light-Emitting Diode and Method For Fabrication Thereof - A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage. | 12-25-2008 |
20080315177 | LIGHT EMISSION USING QUANTUM DOT EMITTERS IN A PHOTONIC CRYSTAL - Devices and methods of manufacturing; for emitting substantially white light using a photonic crystal are described. The photonic crystal has a lattice of air holes and is made from a substrate containing quantum dots. The substrate is etched with three defects that are optically coupled together so that each emits only certain frequencies of light. In combination, the defects can produce substantially white light. The parameters of the photonic crystal are dimensioned so as to cause the coupling between the defects to produce substantially white light. | 12-25-2008 |
20080315178 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer. | 12-25-2008 |
20080315179 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer. | 12-25-2008 |
20080315180 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a quantum barrier layer and a quantum well layer on the first conductive type semiconductor layer. An indium (In) composition ratio of the quantum well layer is changed in a graded manner. The second conductive type semiconductor layer is disposed on the active layer. | 12-25-2008 |
20090008624 | Optoelectronic device - The present invention provides an optoelectronic device, which includes a first electrode, a substrate on the first electrode, and a buffer layer on the substrate. The buffer layer further includes a first gallium nitride based compound layer on the substrate, a II-V group compound layer on the first gallium nitride based compound layer, a second gallium nitride based compound layer on the II-V group compound layer, and a third gallium nitride based compound layer on the second gallium nitride based compound layer. Then, a first semiconductor conductive layer is formed on the buffer layer; an active layer is formed on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a second semiconductor conductive layer on the active layer; a transparent conductive layer on the second semiconductor conductive layer; and a second electrode on the transparent conductive layer. | 01-08-2009 |
20090008625 | Optoelectronic device - The present invention provides an optoelectronic device, which includes a substrate having a first surface and a second surface, and an atomization layer located therebetween; a multi-layer semiconductor layer is formed on the first surface of the substrate, which further includes a first semiconductor structure that is formed on the substrate, a second semiconductor structure, and an active layer is located between the first semiconductor structure and the second semiconductor structure. | 01-08-2009 |
20090008626 | Optoelectronic device - The present invention provides an optoelectronic device which includes a first electrode, a substrate on the first electrode; a buffer layer on the substrate, in which the buffer layer includes a first gallium nitride based compound layer on the substrate, a second gallium nitride based compound layer, and a II-V group compound layer between the first gallium nitride based compound layer and the second gallium nitride based compound layer; a first semiconductor conductive layer on the buffer layer; an active layer on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a semiconductor conductive layer on the active layer; a transparent layer on the second semiconductor conductive layer; and a second electrode on the transparent layer. | 01-08-2009 |
20090008627 | Luminous device and method of manufacturing the same - A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting layer. The light emitting layer is a strained nanowire. | 01-08-2009 |
20090008628 | LIGHT-EMITTING DEVICE AND LIGHT-RECEIVING DEVICE USING TRANSISTOR STRUCTURE - Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity. | 01-08-2009 |
20090014712 | TUNNEL JUNCTION LIGHT EMITTING DEVICE - A tunnel junction light emitting device according to the present invention is provided with an active layer and an electron tunneling region supplying the active layer with carriers. The electron tunneling region has a first p-type semiconductor layer, a second p-type semiconductor layer and an n-type semiconductor layer. The second p-type semiconductor layer is sandwiched between the first p-type semiconductor layer and the n-type semiconductor layer, and the first p-type semiconductor layer, the second p-type semiconductor layer and the n-type semiconductor layer form a tunnel junction to which a reverse bias is applied. An energy level at a valence band edge of the second p-type semiconductor layer is equal to or lower than an energy level at a valence band edge of the first p-type semiconductor layer. | 01-15-2009 |
20090014713 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer. | 01-15-2009 |
20090026440 | Nitride semiconductor light-emitting element - A nitride semiconductor light-emitting element | 01-29-2009 |
20090032798 | LIGHT EMITTING DIODE (LED) - A light-emitting diode (LED) includes a p-type layer, an n-type layer, and an active layer arranged between the p-type layer and the n-type layer. The active layer includes at least one quantum well adjacent to at least one modulation-doped layer. Alternatively, or in addition thereto, at least one surface of the n-type layer or the p-type layer is texturized to form a textured surface facing the active layer. | 02-05-2009 |
20090032799 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface. | 02-05-2009 |
20090032800 | PHOTONIC CRYSTAL LIGHT EMITTING DEVICE - There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency. | 02-05-2009 |
20090039339 | NONPOLAR III-NITRIDE LIGHT EMITTING DIODES WITH LONG WAVELENGTH EMISSION - A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission. | 02-12-2009 |
20090045392 | Nitride semiconductor device - There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer. | 02-19-2009 |
20090045393 | Nitride semiconductor device and method for manufacturing the same - There are provided a nitride semiconductor device having a structure capable of improving crystallinity of grown nitride semiconductor, carrying out easily removing a substrate, and dividing into chips very easily, by using zinc oxide based compound having excellent processability as a substrate, and a method for manufacturing the same. In case that a nitride semiconductor device is formed by laminating nitride semiconductor layers on a substrate ( | 02-19-2009 |
20090045394 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE THEREOF - A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface having at least one first region with a first (average surface lattice) parameter value and at least one second region having a second parameter value different from the first. The semiconductor layer is deposited to a thickness so self-organised islands form over both the first and second regions. The difference in the parameter value means the islands over the first region have a first average parameter value and the islands over the second region have a second average parameter value different from the first. A capping layer is deposited over islands and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands. | 02-19-2009 |
20090050874 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked, and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has greater bandgap energy than a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers, and has a net polarization equal to or smaller than that of the quantum barrier layer adjacent thereto. The nitride semiconductor light emitting device can achieve high efficiency in every current region by minimizing a net polarization mismatch between a quantum barrier layer and an electron blocking layer. | 02-26-2009 |
20090050875 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer. | 02-26-2009 |
20090057646 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate | 03-05-2009 |
20090057647 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer. | 03-05-2009 |
20090065762 | LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE - A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure. | 03-12-2009 |
20090065763 | LIGHT-EMITTING SEMICONDUCTOR DEVICE - The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode. | 03-12-2009 |
20090072220 | Nitride Semiconductor LED and Fabrication Method Thereof - A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an In | 03-19-2009 |
20090078928 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND INFORMATION DISPLAY DEVICE - A light-emitting device has a structure in which a semiconductor or a conductive substrate having a bottom electrode, a layer for generating hot electrons, quasi-ballistic electrons or ballistic electrons, a luminous layer, and a semitransparent surface electrode are deposited, or a structure in which a holes supply layer is provided between the luminous layer and the semitransparent surface electrode having the same structure. The light-emitting device realizes highly efficient light emission in a range from infrared rays to ultraviolet ray with smaller driving current than that of conventional injection-type or intrinsic EL devices. | 03-26-2009 |
20090090900 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip ( | 04-09-2009 |
20090090901 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer. | 04-09-2009 |
20090101886 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a first semiconductor material layer, a light-emitting layer, a second semiconductor material layer, a first transparent insulating layer, a metal layer and at least one electrode. The first semiconductor material layer, the light-emitting layer, and the second semiconductor material layer are formed in sequence on the substrate. An opening is formed on the upper surface of the second semiconductor material layer and extends to the interior of the first semiconductor material layer. The first transparent insulating layer overlays the sidewalls of the opening and substantially overlays the upper surface of the second semiconductor material layer such that a region of the upper surface is exposed. The metal layer fills the opening, overlays the exposed region, and partially overlays the first transparent insulating layer. The at least one electrode is formed on the metal layer. | 04-23-2009 |
20090108250 | LIGHT EMITTING DIODE - A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening. | 04-30-2009 |
20090114900 | SEMICONDUCTOR LIGHT-EMITTING DIODE - A semiconductor light-emitting diode | 05-07-2009 |
20090121213 | SEMICONDUCTOR DEVICE WITH TUNABLE ENERGY BAND GAP - The present invention relates to a semiconductor device in which energy band gap can be electrically varied. An idea of the present invention is to provide a device, which is based on nanowires ( | 05-14-2009 |
20090121214 | III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface has a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses. | 05-14-2009 |
20090127539 | Nitride semiconductor light emitting device - As an example of a nitride semiconductor light emitting device, on a sapphire substrate, a GaN buffer layer, an n-type GaN contact layer, an MQW active layer, and a p-type GaN contact layer are sequentially stacked, and a partial region from the p-type GaN contact layer to the middle of the n-type GaN contact layer is mesa-etched so as to form an n electrode. Meanwhile, a p electrode is provided on the p-type GaN contact layer, and, in addition to the p electrode, multiple ridge parts are formed by crystal growth so as to be scattered. By providing the multiple ridge parts, device characteristics can be improved without causing damage on the GaN-based semiconductor layer. | 05-21-2009 |
20090134380 | SOLID-STATE LIGHTING ELEMENT - A solid-state lighting element includes a transparent electrically conductive substrate, a first type confinement layer disposed on the transparent electrically conductive substrate, an active layer disposed on the first type confinement layer, a second type confinement layer disposed on the active layer, an electrode contacting and disposed on the second type confinement layer. The transparent electrically conductive substrate is made of Hydrogenated Silicon Carbides. A heat generated by the LED can be efficiently dissipated through the transparent electrically conductive substrate in time as the SiC:H is a material of high conductivity and high thermo-conductivity. Therefore, a quantum efficiency of the LED | 05-28-2009 |
20090146132 | NITRIDE SEMICONDUCTOR DEVICE - There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough. | 06-11-2009 |
20090152528 | HIGH-POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME - Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate. | 06-18-2009 |
20090159869 | Solid State Light Emitting Device - A semiconductor structure ( | 06-25-2009 |
20090159870 | LIGHT EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted. | 06-25-2009 |
20090159871 | LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies. | 06-25-2009 |
20090166606 | Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof - Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced. | 07-02-2009 |
20090166607 | Nitride Semiconductor Light Emitting Element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 07-02-2009 |
20090166608 | Light emitting semiconductor device and fabrication method for the light emitting semiconductor device - A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity. | 07-02-2009 |
20090194761 | ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY INCREASED INDIUM INCORPORATION - An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm. | 08-06-2009 |
20090206320 | GROUP III NITRIDE WHITE LIGHT EMITTING DIODE - A white light-emitting diode is fabricated by metal organic chemical vapor deposition (MOCVD), which can produce a broad band emission covering all the visible range in the spectrum by capping the Indium nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots (QDs) in single or multiple In | 08-20-2009 |
20090206321 | THIN FILM TRANSISTOR COMPRISING NANOWIRES AND FABRICATION METHOD THEREOF - A thin film transistor includes nanowires. More specifically, the thin film transistor includes nanowires aligned between and extending to opposite facing lateral surfaces of source/drain electrodes on a substrate. The nanowires extend in a direction parallel to a major surface defining the substrate to form a semiconductor channel layer. Also disclosed herein is a method for fabricating the thin film transistor. | 08-20-2009 |
20090206322 | BROADBAND LIGHT EMITTING DEVICE LAMPS FOR PROVIDING WHITE LIGHT OUTPUT - A multi-chip light emitting device (LED) lamp for providing white light includes first and second broadband LED chips. The first LED chip includes a multi-quantum well active region having a first plurality of alternating active and barrier layers. The first plurality of active layers respectively include different relative concentrations of at least two elements of a first semiconductor compound, and are respectively configured to emit light of a plurality of different emission wavelengths over a first wavelength range. The second LED chip includes a multi-quantum well active region having a second plurality of alternating active and barrier layers. The second plurality of active layers respectively include different relative concentrations of at least two elements of a second semiconductor compound, and are respectively configured to emit light of a plurality of different emission wavelengths over a second wavelength range including wavelengths greater than those of the first wavelength range. The light emitted by the first and second LED chips combines to provide white light. Related devices are also discussed. | 08-20-2009 |
20090206323 | LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side. | 08-20-2009 |
20090212276 | LIGHT-EMITTING DIODE DEVICE AND A FABRICATION METHOD THEREOF - The present invention provides a light-emitting diode (LED) device and a fabrication method thereof. The LED device has a double-layered contact layer structure with a surface of one contact layer being patterned to increase ohmic contact area of the double-layered contact layer structure to lower an operation voltage of the LED device, and hence reducing power consumption. | 08-27-2009 |
20090212277 | GROUP-III NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING GROUP-III NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of In | 08-27-2009 |
20090212278 | CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE AND METHOD - An apparatus and method for making it. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate. | 08-27-2009 |
20090218561 | Organic electroluminescence element - An organic electroluminescence element including at least two light-emitting layers disposed between an anode and a cathode, wherein the at least two light-emitting layers include a light-emitting layer A that contains an electron transporting light-emitting material and a hole transporting host material, wherein a concentration of the electron transporting light-emitting material gradually increases from an anode side toward a cathode side of the light-emitting layer A, and a light-emitting layer B that contains a hole transporting light-emitting material and an electron transporting host material, wherein a concentration of the hole transporting light-emitting material gradually decreases from an anode side toward a cathode side of the light-emitting layer B. An organic EL element with high light-emission efficiency and excellent durability is provided. | 09-03-2009 |
20090218562 | High brightness light emitting diode with a bidrectionally angled substrate - A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer, and the ( | 09-03-2009 |
20090230381 | AlInGaP LED HAVING REDUCED TEMPERATURE DEPENDENCE - To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer. | 09-17-2009 |
20090236584 | LIGHT-EMITTING DEVICE WITH ENHANCED LUMINOUS EFFICIENCY AND METHOD OF PRODUCING THE SAME - A light-emitting device comprises first and second dot members. The first dot member is formed so that it makes contact with the second dot member. The first dot member comprises a plurality of first quantum dot layers. Each of the plurality of first quantum dot layers comprises a plurality of first quantum dots and a silicon dioxide film. The first quantum dot comprises an n-type silicon dot. The second dot member comprises a plurality of second quantum dot layers. Each of the plurality of second quantum dot layers comprises a plurality of second quantum dots and a silicon dioxide film. The second quantum dot comprises a p-type silicon dot. | 09-24-2009 |
20090242869 | SUPER LATTICE/QUANTUM WELL NANOWIRES - Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire. | 10-01-2009 |
20090242870 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided. | 10-01-2009 |
20090242871 | Quantum Dot Inorganic Electroluminescent Device - An inorganic EL device is provided with a substrate, a first electrode, a first insulating layer, a light emitting layer, a second insulating layer and a second electrode. The inorganic EL light emitting device is characterized in that the light emitting layer contains a quantum dot and is arranged between the first insulating layer and the second insulating layer by being brought into contact with each of the insulating layers. | 10-01-2009 |
20090250683 | Nitride-based semiconductor light emitting element - The purpose of the present invention is to obtain a nitride-based semiconductor light emitting element capable of improving light emission efficiency by reducing sheet resistance and a forward voltage of a translucent electrode including indium cerium oxide. The nitride-based semiconductor light emitting element of the present invention is has a translucent electrode including indium cerium oxide; and cerium oxide is contained in a ratio of 10 to 20 wt % with respect to a whole of the indium cerium oxide. | 10-08-2009 |
20090250684 | LIGHT EMITTING SEMICONDUCTOR - A semiconductor element is disclosed having a layered body of a first conductivity type, a light emitting layer, a layered body of a second conductivity type, a constriction layer having a constriction hole, and a first electrode having a lighting hole, a second electrode positioned such that charge traveling between the first and second electrodes passes through the light emitting layer. The constriction hole area is larger than the lighting hole area, and the lighting hole and the constriction hole expose a part of the layered body of the second conductivity type. A mirror is positioned such that the mirror receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type, and the mirror is constructed to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm. | 10-08-2009 |
20090250685 | LIGHT EMITTING DEVICE - Disclosed are a light emitting device. The light emitting device includes a first conductive semiconductor layer, a light emitting layer, a protective layer, a nano-layer and a second conductive semiconductor layer. The light emitting layer is formed on the first conductive semiconductor layer. The protective layer is formed on the light emitting layer. The nano-layer is formed on the protective layer. The second conductive semiconductor layer is formed on the nano-layer. | 10-08-2009 |
20090250686 | METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed. | 10-08-2009 |
20090261317 | Enhancement of Light Emission Efficiency by Tunable Surface Plasmons - An apparatus ( | 10-22-2009 |
20090261318 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a semiconductor layer on the second conductive semiconductor layer, and comprising a plurality of a semiconductor structures apart from each other and microfacets. | 10-22-2009 |
20090267048 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is λ, an index of refraction of the ZnO layer at the wavelength λ is n | 10-29-2009 |
20090267049 | Plasmon Enhanced Nanowire Light Emitting Diode - A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor junction, a shell layer coaxially surrounding the nanowire, and an insulating layer, which is plasmonically thin, isolating the shell layer from the nanowire. The shell layer supports a surface plasmon that couples to the semiconductor junction by an evanescent field. Light is generated in a vicinity of the semiconductor junction and the surface plasmon is coupled to the semiconductor junction during light generation. The coupling enhances one or both of an efficiency of light emission and a light emission rate of the LED. A method of making the nanowire LED includes forming the nanowire, providing the insulating layer on the surface of the nanowire, and forming the shell layer on the insulating layer in the vicinity of the semiconductor junction. | 10-29-2009 |
20090267050 | METHOD OF PREPARING CADMIUM SULFIDE NANOCRYSTALS EMITTING LIGHT AT MULTIPLE WAVELENGTHS, AND CADMIUM SULFIDE NANOCRYSTALS PREPARED BY THE METHOD - A cadmium sulfide nanocrystal, wherein the cadmium sulfide nanocrystal shows maximum luminescence peaks at two or more wavelengths and most of the atoms constituting the nanocrystal are present at the surface of the nanocrystal to form defects. | 10-29-2009 |
20090272963 | Surface Light Emitting Element - Provided is a surface light emitting element having a high productivity, a high light emission output and good response characteristics, as well as capable of suppressing an increase of a forward voltage necessary for light emission. A surface light emitting element according to the present invention is a vertical cavity surface light emitting element including: an active layer | 11-05-2009 |
20090272964 | Light-emitting device and method for manufacturing the same - A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency. | 11-05-2009 |
20090278113 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of In | 11-12-2009 |
20090283746 | LIGHT-EMITTING DEVICES WITH MODULATION DOPED ACTIVE LAYERS - A semiconductor light emitting device has an n-type layer, a p-type layer, and a light-emitting active layer arranged between the p-type layer and the n-type layer, the active layer having alternating regions of doped and undoped materials. A double heterojunction light emitting device has a bulk active layer having doped portions alternating with undoped portions. A method of manufacturing a light emitting device includes forming a first layer arranged on a substrate, growing an active layer, selectively adding impurities at predetermined times during the growing of the active layer, and forming a second layer arranged on the active layer. | 11-19-2009 |
20090283747 | METALLIZED SILICON SUBSTRATE FOR INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODE - A light emitting diode having a metallized silicon substrate including a silicon base, a buffer layer disposed on the silicon base, a metal layer disposed on the buffer layer, and light emitting layers disposed on the metal layer. The buffer layer can be AlN, and the metal layer ZrN. The light emitting layers can include GaN and InGaN. The metallized silicon substrate can also include an oxidation prevention layer disposed on the metal layer. The oxidation prevention layer can be AlN. The light emitting diode can be formed using an organometallic vapor phase epitaxy process. The intermediate ZrN/AlN layers enable epitaxial growth of GaN on silicon substrates using conventional organometallic vapor phase epitaxy. The ZrN layer provides an integral back reflector, ohmic contact to n-GaN. The AlN layer provides a reaction barrier, thermally conductive interface layer, and electrical isolation layer. | 11-19-2009 |
20090302307 | LED Semiconductor Body - An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least one barrier layer, wherein the quantum layer and the barrier layer are strained with mutually opposite mathematical signs. | 12-10-2009 |
20090302308 | GROUP III NITRIDE WHITE LIGHT EMITTING DIODE - A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an In | 12-10-2009 |
20090315012 | LIGHT EMITTING DEVICE STRUCTURE HAVING NITRIDE BULK SINGLE CRYSTAL LAYER - The object of this invention is to provide a high-output type nitride light emitting device. | 12-24-2009 |
20090315013 | EFFICIENT LIGHT EXTRACTION METHOD AND DEVICE - A tight emitting device comprises at least one p-type layer and at least one n-type layer and a microlens array surface. A method for improving light efficiency of a light emitting device, comprises depositing polystyrene microspheres by rapid convection deposition on surface of light emitting device; depositing a monolayer of close-packed SIO | 12-24-2009 |
20090315014 | LIGHT EMITTING DEVICE AND DISPLAY - A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram. | 12-24-2009 |
20090315015 | LIGHT EMITTING DEVICE AND DISPLAY - A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram. | 12-24-2009 |
20090321713 | METHOD OF CONTROLLING ACTIVE LAYER OF III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention is to provide a method for controlling an active layer of a Hi-nitride semiconductor light emitting device by doping a barrier layer(s) selected from the active layer to suppress light emission in a specific well layer(s). | 12-31-2009 |
20090321714 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side. | 12-31-2009 |
20100001256 | White light emitting devices - A white light emitting semiconductor nanocrystal includes a plurality of semiconductor nanocrystals. | 01-07-2010 |
20100001257 | Stress-Alleviation Layer for LED Structures - A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs. | 01-07-2010 |
20100001258 | LIGHT EMITTING DEVICE AND DISPLAY - A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram. | 01-07-2010 |
20100006817 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein the nanowire comprises a nanowire core and at least one shell layer arranged around at least a portion of the nanowire core. The nanowire core and the shell layer form a pn or pin junction that in operation provides an active region for carrier generation or carrier recombination. Quantum dots adapted to act as carrier recombination centres or carrier generation centres are arranged in the active region. By using the nanowire core as template for formation of the quantum dots and the shell layer, quantum dots of homogeneous size and uniform distribution can be obtained. Basically, the optoelectronic semiconductor device can be used for light generation or light absorption. In the former case the optoelectronic semiconductor device is a light emitting diode or a laser diode and in the latter case the optoelectronic semiconductor device is a photoelectric device, such as a photo diode, a photo detector or a solar cell. | 01-14-2010 |
20100006818 | LIGHT EMITTING DIODE - A light emitting diode which includes a laminate including an n-type cladding layer, an emission layer which has a quantum well structure having a well layer and a barrier layer, an intermediate layer and a p-type cladding layer in this order, wherein the composition of each of the layers is represented by the composition formula: (Al | 01-14-2010 |
20100006819 | LIGHT EMITTING DEVICE AND DISPLAY - A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram. | 01-14-2010 |
20100012920 | III-Nitride Semiconductor Light Emitting Device - The present invention discloses a III-nitride compound semiconductor light emitting device including an active layer for generating light by recombination of an electron and a hole between an n-type nitride compound semiconductor layer and a p-type nitride compound semiconductor layer. The active layer is disposed over the n-type nitride compound semiconductor layer. The III-nitride compound semiconductor light emitting device includes a masking film made of MgN and grown on the p-type nitride compound semiconductor layer, and at least one nitride compound semiconductor layer grown after the growth of the masking film made of MgN. | 01-21-2010 |
20100012921 | NANOWIRE, DEVICE COMPRISING NANOWIRE, AND THEIR PRODUCTION METHODS - A nanowire according to the present invention includes: a nanowire body made of a first material; and a plurality of semiconductor particle made of a second material and being contained in at least a portion of the interior of the nanowire body. | 01-21-2010 |
20100019222 | LOW-TEMPERATURE LED CHIP METAL BONDING LAYER - The present invention discloses a low-temperature light-emitting-diode chip metal bonding layer, which comprises: a first metal layer formed on the joint surface of an LED epitaxial layer and containing an ITO layer, a silver layer, a titanium layer, a platinum layer and a gold layer sequentially arranged from the LED epitaxial layer; and a second metal layer formed on the joint surface of the substrate and containing a titanium layer, a gold layer and an indium layer sequentially arranged from the substrate. Because of the low melting point of the indium layer, the bonding process of the substrate and the LED chip epitaxial layer can be undertaken at a relatively low temperature. Therefore, the present invention can prevent the film structures from being damaged by high temperature and can raise the yield of metal bonding LED chips. | 01-28-2010 |
20100019223 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer. | 01-28-2010 |
20100019224 | LIGHT EMITTING DEVICE AND DISPLAY - A light emitting diode comprising a lead, an LED chip mounted on said lead, said LED chip having a substrate and semiconductor layers formed on said substrate, a transparent material covering said LED chip, and a phosphor contained in said transparent material and absorbing a part of light emitted by said LED chip and emitting light of wavelength different from that of the absorbed light, wherein the main emission peak of said LED chip is within the range from 400 nm to 530 nm, and said LED chip is mounted on said lead with substrate-side up and is electrically connected with said lead by a metallic bump. | 01-28-2010 |
20100019225 | Nitride semiconductor led and fabrication method thereof - Disclosed a nitride semiconductor LED including: a substrate; a GaN-based buffer layer formed on the substrate; Al | 01-28-2010 |
20100025652 | Multiple Quantum-Well Structure, Radiation-Emitting Semiconductor Base and Radiation-Emitting Component - A multiple quantum well structure ( | 02-04-2010 |
20100025653 | TUNABLE WAVELENGTH LIGHT EMITTING DIODE - A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set. | 02-04-2010 |
20100025654 | LIGHT-EMITTING DIODE IN SEMICONDUCTOR MATERIAL AND ITS FABRICATION METHOD - The subject of the invention is a light-emitting diode comprising a structure ( | 02-04-2010 |
20100025655 | PHOTON TUNNELING LIGHT EMITTING DIODES AND METHODS - Embodiments described herein include LEDs that promote photon tunneling. One embodiment of an LED device can have a quantum well layer adapted to generate light having a wavelength, a p-doped alloy layer on a first side of the quantum well layer and an n-doped alloy layer on the other side of the quantum well layer. The device can also include an electrode electrically connected to the p-doped alloy layer and an electrode electrically connected to the n-doped alloy layer. According to one embodiment the thickness of the n-doped alloy layer is less than the wavelength of light generated by the quantum well layer to allow light generated by the quantum well layer to tunnel to the medium (e.g., air). In another embodiment, the entire layer structure can have a thickness that is less than the wavelength. | 02-04-2010 |
20100025656 | WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS - A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths. | 02-04-2010 |
20100025657 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices. | 02-04-2010 |
20100032644 | Nitride Semiconductor Light-Emitting Device and Nitride Semiconductor Light-Emitting Device Fabrication Method - An active layer ( | 02-11-2010 |
20100032645 | AC-DRIVEN LIGHT EMITTING DEVICE HAVING SINGLE ACTIVE LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF - The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage. Also, since the device can be driven by an AC voltage, limitations of an existing DC voltage-driven organic light emitting diode, that is, destruction or a defect of the device by an overcurrent and generation of a dark spot by degradation of local constituent organic materials are solved. | 02-11-2010 |
20100032646 | LIGHT EMITTING DEVICE - A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer. | 02-11-2010 |
20100032647 | UTLRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION - An ultraviolet light emitting semiconductor chip, its use in a LED, and methods of its fabrication are disclosed. The semiconductor chip can include a buffer layer of Al | 02-11-2010 |
20100032648 | LIGHT-EMITTING DEVICE - A light-emitting device with a tunneling structure and a current spreading layer is disclosed. It includes an electrically conductive permanent substrate, an adhesive layer, an epitaxial structure, a tunneling structure and a current spreading layer. The adhesive layer is on the electrically conductive permanent substrate. The epitaxial structure on the adhesive layer at least comprises an upper cladding layer, an active layer, and a lower cladding layer. The tunneling structure on the epitaxial structure comprises a first conductivity type semiconductor layer with a first doping concentration and a second conductivity type semiconductor layer with a second doping concentration. The current spreading layer is on the tunneling structure. | 02-11-2010 |
20100032649 | LIGHT EMITTING DEVICE AND REDUCED POLARIZATION INTERLAYER THEREOF - A light emitting device (LED), in which a reduced polarization interlayer is formed between an electron blocking layer (EBL) and an active layer of the LED, is disclosed. The reduced polarization interlayer is made of Al | 02-11-2010 |
20100032650 | LIGHT EMITTING DIODE HAVING ALGAN BUFFER LAYER AND METHOD OF FABRICATING THE SAME - The present invention relates to a light emitting diode having an Al | 02-11-2010 |
20100038626 | SEMICONDUCTOR NANOPARTICLE AGGREGATE, METHOD FOR PRODUCING THE SAME, AND BIOLOGICAL SUBSTANCE LABELING AGENT UTILIZING THE SAME - This invention provides a semiconductor nanoparticle aggregate comprising three or more types of semiconductor nanoparticles, which are different from each other in diameter, have a narrow particle size distribution, and are different from each other in maximum luminous wavelength of an emission spectrum in a wavelength region of 380 nm to 650 nm, a process for producing the semiconductor nanoparticle aggregate, and a biological substance labeling agent utilizing the semiconductor nanoparticle aggregate. The semiconductor nanoparticle aggregate comprises three or more types of semiconductor nanoparticles which have an identical chemical composition, are different from each other in particle diameter and fall within a particle diameter range of 1.8 to 4 nm and are different from each other in maximum luminous wavelength of an emission spectrum in a wavelength range of 380 to 650 nm. The semiconductor nanoparticle aggregate is characterized in that the difference in maximum luminous wavelength among three or more types of semiconductor nanoparticles constituting the semiconductor nanoparticle aggregate is in the range of 20 to 100 nm. | 02-18-2010 |
20100044673 | LABELING FLUORESCENT COMPOUND - A labeling fluorescent compound which enables highly stable detection in vital labeling and has high sensitivity. The labeling fluorescent compound is characterized by being composed of inorganic fluorescent nanoparticles which have a surface modification compound disposed on the surface thereof and have an average particle diameter of 1.0-20 nm. It is further characterized in that the proportion of the length of the surface modification compound as measured from the surface of the inorganic fluorescent nanoparticles to the particle diameter of the inorganic fluorescent nanoparticles is from 0.10 to 0.50, and that the proportion of the specific gravity of the inorganic fluorescent nanoparticles having the surface modification compound fixed thereto to the specific gravity of the inorganic fluorescent nanoparticles not having the surface modification compound is from 0.80 to 0.40. | 02-25-2010 |
20100044674 | LIGHT EMITTING DIODE HAVING MODULATION DOPED LAYER - A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced. | 02-25-2010 |
20100051900 | MISFIT DISLOCATION FORMING INTERFACIAL SELF-ASSEMBLY FOR GROWTH OF HIGHLY-MISMATCHED III-SB ALLOYS - Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, an emitter device can include monolithic quantum well (QW) lasers directly disposed on a SOI or silicon substrate for waveguide coupled integration. In another exemplary embodiment, a superlattice (SL) photodetector and its focal plane array can include a III-Sb active region formed over a large GaAs substrate using SLS technologies. | 03-04-2010 |
20100051901 | Light emitting devices and displays with improved performance - Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode. The emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. The device further includes a first spacer material disposed between the emissive material and the first electrode. In certain embodiments, the device further includes a first material capable of transporting charge disposed between the emissive material and the first electrode, wherein the first spacer material is disposed between the emissive material and the first electrode. In certain embodiments, for example, light emitting devices can have a maximum peak emission in a range from about 380 nm to about 500 nm. In certain embodiments, the light emitting device can have a maximum peak emission peak in the range from about 450 nm to about 490 nm. Displays including light emitting devices are also disclosed. | 03-04-2010 |
20100051902 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost. | 03-04-2010 |
20100059733 | LED Structure - An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The first trenches or the second trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment. | 03-11-2010 |
20100059734 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing Al | 03-11-2010 |
20100059735 | LIGHT EMITTING DIODE HAVING BARRIER LAYER OF SUPERLATTICE STRUCTURE - A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer. | 03-11-2010 |
20100065811 | SINGLE PHOTON SOURCE WITH AllnN CURRENT INJECTION LAYER - A photon source includes a substrate, an active region formed above the substrate, and a pair of electrodes configured to provide an injection current which passes through the active region. The active region includes a quantum dot layer including one or more Al | 03-18-2010 |
20100065812 | Nitride semiconductor light emitting element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 03-18-2010 |
20100065813 | LIGHT EMITTING DEVICE - A light emitting device includes a stacked body including at least a light emitting layer made of In | 03-18-2010 |
20100065814 | HYBRID ORGANIC/NANOPARTICLE DEVICES - Example embodiments disclosed herein may relate to organic electronic and/or organic optoelectronic devices, which may further relate to hybrid organic/nanoparticle devices with dual functions of resonant tunneling and light emission behaviors. | 03-18-2010 |
20100065815 | SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON SILICON - A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon. | 03-18-2010 |
20100065816 | LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 003-18-2010 | |
20100072456 | OPTO-ELECTRONIC READ HEAD - A read head for a scale reading apparatus, the head including a light source and an array of photodetector elements, wherein said light source and array of photodetector elements are fabricated in a lattice matched semiconductor compound. | 03-25-2010 |
20100078623 | SEMICONDUCTOR METHOD AND DEVICE - A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter. | 04-01-2010 |
20100078624 | NANOWIRE LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom. | 04-01-2010 |
20100078625 | OPTO-ELECTRONIC DEVICE - The present application relates to an opto-electronic device. The opto-electronic device includes a first light-emitting structure and a second light-emitting structure. The first light-emitting structure is capable of generating a first light having a first wavelength. The second light-emitting structure is capable of generating a second light having a second wavelength. The first light-emitting structure includes a nanorod structure having a first active layer, and the first active layer can absorb the second light to generate the first light. | 04-01-2010 |
20100084629 | QUANTUM DOT-METAL OXIDE COMPLEX, METHOD OF PREPARING THE SAME, AND LIGHT-EMITTING DEVICE COMPRISING THE SAME - Provided is a quantum dot-metal oxide complex including a quantum dot and a metal oxide forming a 3-dimensional network with the quantum dot. In the quantum dot-metal oxide complex, the quantum dot is optically stable without a change in emission wavelength band and its light-emitting performance is enhanced. | 04-08-2010 |
20100090195 | QUANTUM DOT OPTOELECTRONIC DEVICES WITH ENHANCED PERFORMANCE - An optoelectronic device is disclosed which includes a quantum dot layer including plurality of quantum dots which do not have capping layers. This optoelectronic device may be a quantum dot light-emitting device, which includes (1) a substrate which is transparent or translucent, (2) an anode electrical conducting layer which is transparent or translucent, and is located adjacent to the substrate, (3) a planarizing/hole injection layer which is located adjacent to the anode electrical conducting layer, (4) a quantum dot layer including the plurality of quantum dots which do not have capping layers, and (5) a cathode electrical conducting layer which is located adjacent to the quantum dot layer. | 04-15-2010 |
20100096614 | Light-emitting diode and method of manufacturing the same - A light-emitting diode and a method of manufacturing the light-emitting diode are provide, the light-emitting diode including a lower electrode on a substrate, a template layer on the lower electrode. The template layer may have a plurality of open regions. A plurality of nano-dashes may be formed in the plurality of open regions of the template layer. A transparent insulating layer may be formed between the nano-dashes. A transparent upper electrode may be formed on the nano-dashes and the transparent insulating layer. | 04-22-2010 |
20100096615 | LIGHT-EMITTING DEVICE - A light-emitting device includes a group III nitride semiconductor layer of a multilayer structure consisting of a group III nitride semiconductor having a major surface defined by a nonpolar plane or a semipolar plane and having at least an n-type layer and a p-type layer. A surface of the group III nitride semiconductor layer on a light extraction side is a mirror surface. The light-emitting device may further include a transparent electrode in contact with the surface of the group III nitride semiconductor layer on the light extraction side. In this case, a surface of the transparent electrode on the light extraction side is preferably a mirror surface. | 04-22-2010 |
20100096616 | LIGHT-EMITTING AND LIGHT-DETECTING OPTOELECTRONIC DEVICE - An exemplary optoelectronic device includes a substrate and an epitaxial structure formed on the optoelectronic device. The epitaxial structure includes an N-type semiconductor layer, a P-type semiconductor layer, a multi-quantum-well layer and an undoped semiconductor layer. The multi-quantum-well layer is arranged between the N-type semiconductor layer and the P-type semiconductor layer. The undoped semiconductor layer is sandwiched between the N-type semiconductor layer and the multi-quantum-well layer. The undoped semiconductor layer is represented by a general formula Al | 04-22-2010 |
20100096617 | TRANSPARENT POLARIZED LIGHT-EMITTING DEVICE - A transparent directional polarized light-emitting device includes a transparent anode and a transparent cathode, a radiation-emitting layer between the anode and the cathode, an optically active reflective layer with a reflection band that matches a chirality and at least partially encompasses a wavelength band of radiation emitted from the radiation-emitting layer, the optically active light blocking layer located on a side of the radiation-emitting layer, and a transparent substrate adjacent to the optically active reflective layer. | 04-22-2010 |
20100102293 | III/V-SEMICONDUCTOR - The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition Ga | 04-29-2010 |
20100102294 | ORGANIC LIGHT EMITTING DIODE WITH NANO-DOTS AND FABRICATION METHOD THEREOF - An organic light emitting diode (OLED) with nano-dots and a fabrication method thereof are disclosed. The OLED apparatus comprises a substrate, a first electrically conductive layer, a first emission-auxiliary layer, an emissive layer, a second emission-auxiliary layer and a second electrically conductive layer. Its fabrication method is described below. Nano-dots with functional groups on the surface are incorporated into the emissive layer, the first emission-auxiliary layer or the second emission-auxiliary layer to form a layered electro-luminescent structure. By using the fabrication method, the resultant efficiency of the OLEDs can be markedly enhanced. | 04-29-2010 |
20100102295 | LIGHT EMITTING DEVICE - This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer. | 04-29-2010 |
20100102296 | SEMICONDUCTOR DEVICE - A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. | 04-29-2010 |
20100108984 | QUANTUM DOT ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME - A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface. | 05-06-2010 |
20100108985 | OPTOELECTRONIC DEVICE BASED ON NON-POLAR AND SEMI-POLAR ALUMINUM INDIUM NITRIDE AND ALUMINUM INDIUM GALLIUM NITRIDE ALLOYS - A high-power and high-efficiency light emitting device with emission wavelength (λ | 05-06-2010 |
20100117055 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - To provide a semiconductor light-emitting device capable of sufficiently emitting lights of different colors. | 05-13-2010 |
20100117056 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LIGHTING APPARATUS AND DISPLAY APPARATUS USING THE SAME - The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same. | 05-13-2010 |
20100117057 | NITRIDE SEMICONDUCTOR LED USING A HYBRID BUFFER LAYER AND A FABRICATION METHOD THEREFOR - The invention relates to a nitride semiconductor LED using a hybrid buffer layer with a minimum lattice mismatch between the buffer layer and the nitride semiconductor and a fabrication method therefor. The fabrication method of a nitride semiconductor LED using a hybrid buffer layer comprises: a first step, in which an Al | 05-13-2010 |
20100123118 | LED Epitaxial Wafer with Patterned GaN based Substrate and Manufacturing Method For the Same - A LED epitaxial-Chip with patterned GaN based substrate is provided. The LED epitaxial-Chip includes a substrate, a butter layer formed on the substrate, unintentional doped intrinsic GaN layer formed on the substrate, n-GaN layer formed on the substrate, InGaN active layer formed on the substrate, multiple quantum well formed on the substrate; and p-GaN layer formed on the sapphire substrate. The substrate has DBR reflection layer formed thereon. The DBR reflection layer is layered structure grown by two materials having different refractive index periodically alternate. The reflection layer forms at least two spaced patterned structures on the substrate. A manufacturing method of LED epitaxial-Chip with patterned GaN based substrate is also provided. | 05-20-2010 |
20100123119 | LIGHT EMITTING DIODE HAVING INDIUM NITRIDE - The present invention relates to a light emitting diode (LED) including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, and an active region interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The active region may include an InGaN quantum well layer. The LED may further include a super lattice layer interposed between the n-type nitride semiconductor layer and the active region. The super lattice layer may be a structure wherein InN layers and In | 05-20-2010 |
20100127236 | Laser Diode With High Indium Active Layer And Lattice Matched Cladding Layer - A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of Al | 05-27-2010 |
20100127237 | HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND A METHOD FOR FABRICATING THE SAME - The preset invention discloses a high-brightness LED structure and a method for fabricating the same. The LED structure of the present invention comprises a silicon substrate, a metal adhesion layer, a metal reflection layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, which are sequentially stacked. In the method of the present invention, the P-type semiconductor layer, active layer, N-type semiconductor layer and metal reflection layer are sequentially deposited on an N-type substrate; next, the metal reflection layer is bonded to the metal adhesion layer having been formed on the silicon substrate; then, the N-type substrate is removed. The present invention uses the silicon substrate to replace the light-absorptive GaAs substrate. Therefore, the present invention can promote light efficiency and enhance brightness. | 05-27-2010 |
20100127238 | Light emitting diode - Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced. | 05-27-2010 |
20100127239 | III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light-emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer doped with a p-type dopant, an active layer disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and including a quantum well layer to generate light by recombination of electrons and holes, and a diffusion barrier layer disposed between the quantum well layer and the p-type nitride semiconductor layer to be in contact with both layers, having a surface formed to make the interface with the p-type nitride semiconductor layer smooth, and to prevent diffusion of the p-type dopant into the quantum well layer. | 05-27-2010 |
20100133504 | LIGHT EMITTING DEVICES - A new light emitting device is disclosed. The device includes a reflector, a surface layer, and a light emitting layer located there-between. The light emitting layer emits light at a wavelength λ. An optical thickness from the light emitting layer to the reflector is approximately m*λ/4, where m is a positive integer. Furthermore, the said device may, in addition, include an optical transform layer adjoining to the light emitting layer. Thus, the light emitted by the device can be not only collimated but also polarized. | 06-03-2010 |
20100133505 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME - A high luminance semiconductor light emitting device and a fabrication method for such semiconductor light emitting device are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate. | 06-03-2010 |
20100133506 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR - Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer ( | 06-03-2010 |
20100133507 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME - A high luminance semiconductor light emitting device and a fabrication method for the same are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate. | 06-03-2010 |
20100133508 | GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE - Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum. | 06-03-2010 |
20100140585 | QUANTUM DOT WHITE AND COLORED LIGHT-EMITTING DEVICES - A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence. | 06-10-2010 |
20100148145 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate | 06-17-2010 |
20100148146 | MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING OPTICALLY PUMPED MULTIPLE QUANTUM WELLS - An embodiment is a method and apparatus for a white or full-color light-emitting diode. First single or multiple quantum wells (QWs) at a first wavelength are formed at an active region between a p-type layer and an n-type layer of a light-emitting diode. Multiple passive quantum wells (QWs) are formed within the p-type layer or the n-type layer. The multiple passive QWs are optically pumped by the first or single multiple QWs to generate a desired color. | 06-17-2010 |
20100148147 | MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING SELECTIVE AREA GROWTH - An embodiment is a method and apparatus for a white or full-color light-emitting diode. A first mask having a first pattern is applied over surface of an n-type layer. A first active region is grown selectively and including single or multiple quantum wells (QWs) of a first active color to cause a first wavelength shift in a first vicinity area around the first pattern. The first wavelength shift results in an emission of a first desired color according to the first pattern. | 06-17-2010 |
20100148148 | FABRICATION METHOD OF A LIGHT-EMITTING ELEMENT AND THE LIGHT-EMITTING ELEMENT - A fabrication method of the light emitting element and its light emitting element are disclosed herein. It utilizes the membrane forming technology to form optic films arranged in array on a substrate and then upward forming the epitaxial layer by the epitaxial lateral overgrowth (ELOG) technology so as to form light-emitting elements in array. The optic films contribute to the high reflection property and can sustain high temperature in the ELOG process. | 06-17-2010 |
20100148149 | ELEVATED LED AND METHOD OF PRODUCING SUCH - The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light. | 06-17-2010 |
20100148150 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A Group III nitride compound semiconductor light emitting device is provided which has: an n-type semiconductor layer ( | 06-17-2010 |
20100148151 | LIGHT EMITTING DEVICES WITH IMPROVED LIGHT EXTRACTION EFFICIENCY - A device includes a light emitting structure and a wavelength conversion member comprising a semiconductor. The light emitting structure is bonded to the wavelength conversion member. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5. | 06-17-2010 |
20100155693 | LIGHT EMITTING DEVICE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting device having a plurality of light emitting cells and a method of fabricating the same. The light emitting device comprises a plurality of light emitting cells positioned on a substrate to be spaced apart from one another. Each of the light emitting cells comprises a first conductive-type upper semiconductor layer, an active layer and a second conductive-type lower semiconductor layer. Electrodes are positioned between the substrate and the light emitting cells, and each of the electrodes has an extension extending toward adjacent one of the light emitting cells. An etching prevention layer is positioned in regions between the light emitting cells and between the electrodes. Each wire has one end connected to the upper semiconductor layer and the other end connected to the electrode through the etching prevention layer. | 06-24-2010 |
20100155694 | ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION - An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided. | 06-24-2010 |
20100155695 | LIGHT EMITTING DEVICE USING NANO SIZE NEEDLE - A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer. | 06-24-2010 |
20100163840 | Nitride nanowires and method of producing such - The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor. | 07-01-2010 |
20100171094 | LIGHT-EMITTING SEMICONDUCTOR APPARATUS - A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure. | 07-08-2010 |
20100176369 | Metalized Silicon Substrate for Indium Gallium Nitride Light-Emitting Diodes - A light emitting diode having a metallized silicon substrate including a silicon base, a buffer layer disposed on the silicon base, a metal layer disposed on the buffer layer, and light emitting layers disposed on the metal layer. The buffer layer can be AlN, and the metal layer ZrN. The light emitting layers can include GaN and InGaN. The metallized silicon substrate can also include an oxidation prevention layer disposed on the metal layer. The oxidation prevention layer can be AlN. The light emitting diode can be formed using an organometallic vapor phase epitaxy process. The intermediate ZrN/AlN layers enable epitaxial growth of GaN on silicon substrates using conventional organometallic vapor phase epitaxy. The ZrN layer provides an integral back reflector, ohmic contact to n-GaN. The AlN layer provides a reaction barrier, thermally conductive interface layer, and electrical isolation layer. | 07-15-2010 |
20100176370 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device includes an n-type silicon thin film ( | 07-15-2010 |
20100176371 | Semiconductor Diodes Fabricated by Aspect Ratio Trapping with Coalesced Films - A photonic device comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region. The device further includes a top diode material and an active diode region between the top and bottom diode materials. | 07-15-2010 |
20100176372 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer. | 07-15-2010 |
20100176373 | FABRICATION METHOD OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE THEREBY - A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active layer on the first conductive nitride semiconductor layer; forming a second conductive nitride semiconductor layer on the active layer; and lowering a temperature while adding oxygen to the result by performing a thermal process. | 07-15-2010 |
20100181550 | Manufacture method for ZnO based semiconductor crystal and light emitting device using same - A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. | 07-22-2010 |
20100187494 | NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DEVICES - A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-type contact layer, a second p-type contact layer, a first hole diffusion layer, a second hole diffusion layer, a light emitting active region, a second electron diffusion layer, a first electron a first n-type contact layer, which are sequentially stacked. Such a structure may effectively employ quasi-two-dimensional free electron and free hole gases formed at heterojunction interfaces due to the spontaneous polarization and the piezoelectric polarization in the wurtzite lattice structure with the Ga face, and thus enhances the emission uniformity and emission efficiency of the light emitting device. | 07-29-2010 |
20100187495 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first semiconductor layer emitting electrons, a second semiconductor layer emitting holes, and an active layer emitting light by combination of the electrons and holes. At least one of the layers comprises an photo enhanced minority carriers. | 07-29-2010 |
20100187496 | STRAIN BALANCED LIGHT EMITTING DEVICES - A strain balanced active-region design is disclosed for optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs) for better device performance. Lying below the active-region, a lattice-constant tailored strain-balancing layer provides lattice template for the active-region, enabling balanced strain within the active-region for the purposes of 1) growing thick, multiple-layer active-region with reduced defects, or 2) engineering polarization fields within the active-region for enhanced performance. The strain-balancing layer in general enlarges active-region design and growth windows. In some embodiments of the present invention, the strain-balancing layer is made of quaternary In | 07-29-2010 |
20100187497 | SEMICONDUCTOR DEVICE - A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked. | 07-29-2010 |
20100187498 | NANOWIRE LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom. | 07-29-2010 |
20100193769 | LIGHT SOURCE, AND DEVICE - In accordance with the invention, a light source for display and/or illumination is provided, the light source comprising a heterostructure including semiconductor layers, the heterostructure forming a waveguide between a first end and a second end, the heterostructure comprising a plurality of layers and comprising an optically active zone formed by the plurality of layers, the optically active zone capable of emitting light guided by said waveguide, at least two different radiative transitions being excitable in the optically active an electrical current between a p-side electrode and an n-side electrode, transition energies of said at least two different radiative transitions corresponding to wavelengths in the visible part of the optical spectrum, the light source further comprising means for preventing reflections of light from the waveguide by at least one of said first and second end back into the waveguide, thereby causing the light source to comprise a superluminescent light emitting diode. | 08-05-2010 |
20100200837 | Dual sided processing and devices based on freestanding nitride and zinc oxide films - Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells. | 08-12-2010 |
20100207096 | METHOD FOR FABRICATING HIGHLY REFLECTIVE OHMIC CONTACT IN LIGHT-EMITTING DEVICES - One embodiment of the present invention provides a method for fabricating a highly reflective electrode in a light-emitting device. During the fabrication process, a multilayer semiconductor structure is fabricated on a growth substrate, wherein the multilayer semiconductor structure includes a first doped semiconductor layer, a second doped semiconductor layer, and/or a multi-quantum-wells (MQW) active layer. The method further includes the followings operations: forming a contact-assist metal layer on the first doped semiconductor layer, annealing the multilayer structure to activate the first doped semiconductor layer, removing the contact-assist metal layer, forming a reflective ohmic-contact metal layer on the first doped semiconductor layer, forming a bonding layer coupled to the reflective ohmic-contact metal layer, bonding the multilayer structure to a conductive substrate, removing the growth substrate, forming a first electrode coupled to the conductive substrate, and forming a second electrode on the second doped semiconductor layer. | 08-19-2010 |
20100207097 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects. | 08-19-2010 |
20100207098 | Light-Emitting Structure - A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type, are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type. | 08-19-2010 |
20100207099 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF - A nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced. | 08-19-2010 |
20100213436 | NON-POLAR ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING SAME - An ultra-violet light-emitting device and method for fabricating an ultraviolet light emitting device, | 08-26-2010 |
20100213437 | LIGHT EMITTING DEVICE - The present invention provides a light emitting device that comprises a luminescent layer formed of a monomolecular film of quantum dots and has enhanced brightness and luminescence efficiency. A light emitting device | 08-26-2010 |
20100213438 | QUANTUM DOT LIGHT EMITTING DEVICE HAVING QUANTUM DOT MULTILAYER - A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer. | 08-26-2010 |
20100213439 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 08-26-2010 |
20100219394 | METHOD FOR FABRICATING A LOW-RESISTIVITY OHMIC CONTACT TO A P-TYPE III-V NITRIDE SEMICONDUCTOR MATERIAL AT LOW TEMPERATURE - One embodiment of the present invention provides a method for fabricating a group III-V nitride structure with an ohmic-contact layer. The method involves fabricating a group III-V nitride structure with a p-type layer. The method further involves depositing an ohmic-contact layer on the p-type layer without first annealing the p-type layer. The method also involves subsequently annealing the p-type layer and the ohmic-contact layer in an annealing chamber at a predetermined temperature for a predetermined period of time, thereby reducing the resistivity of the p-type layer and the ohmic contact in a single annealing process. | 09-02-2010 |
20100219395 | Optical Semiconductor Device and Method of Manufacturing the Same - Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor. | 09-02-2010 |
20100224852 | III-NITRIDE LIGHT EMITTING DEVICE INCORPORATING BORON - Embodiments of the invention include a III-nitride semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. At least one layer in the light emitting region is B | 09-09-2010 |
20100224853 | SEMICONDUCTOR NANOCRYSTAL PROBES FOR BIOLOGICAL APPLICATIONS AND PROCESS FOR MAKING AND USING SUCH PROBES - A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe. | 09-09-2010 |
20100224854 | LIGHT EMITTING DEVICE - A light emitting device (LED) is provided. The LED comprises a light emitting structure and a mixed-period photonic crystal structure. The light emitting structure comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The mixed-period photonic crystal structure is on the light emitting structure. | 09-09-2010 |
20100224855 | Light-emitting device epitaxial wafer and light-emitting device - A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si. | 09-09-2010 |
20100224856 | ELECTROLUMINESCENT DEVICE - Provided is an electroluminescent device which has a luminescent layer including quantum dots and which are excellent in life characteristics. An electroluminescent device ( | 09-09-2010 |
20100224857 | FABRICATION OF PHOSPHOR FREE RED AND WHITE NITRIDE-BASED LEDs - A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material. | 09-09-2010 |
20100224858 | LATERAL THERMAL DISSIPATION LED AND FABRICATION METHOD THEREOF - A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer heat out of the LED. The thermal dissipation efficiency of the LED is increased, and the lighting emitting efficiency is accordingly improved. | 09-09-2010 |
20100224859 | Organic Light-Emitting Diodes with Electrophosphorescent-Coated Emissive Quantum Dots - The present invention provides a composition comprising quantum dots and a coating material that comprises an electro-phosphorescent moiety, and methods for producing and using the same. In particular, compositions of the invention are used in organic light emitting diodes (OLEDs), and electronic devices that utilize OLEDs. | 09-09-2010 |
20100224860 | HIGH EFFICIENCY LEDS WITH TUNNEL JUNCTIONS - An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction. | 09-09-2010 |
20100230656 | LIGHT EMITTING STRUCTURE AND METHOD OF MANUFACTURE THEREOF - A semiconductor structure having an electrically conducting silicon substrate and a GaN semiconductor device separated from the substrate by a buffer layer is provided. The buffer layer electrically connects the silicon substrate with the GaN semiconductor device. In addition, a GaN LED arranged in a flip chip orientation on the buffer layer on the substrate is provided. | 09-16-2010 |
20100230657 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure. | 09-16-2010 |
20100237322 | LIGHT EMITTING DEVICE - A QD protecting material having high compatibility with a binder component in a luminescent layer. The luminescent layer contains, as a part of its chemical structure, a compound containing a moiety A having a sum atomic weight MA of 100 or more and quantum dots protected by a protecting material, the protecting material contains, as a part of its chemical structure, a linking group connected to a quantum dot surface and a moiety B that has a sum atomic weight MB of 100 or more, satisfies a relationship between MB and MA represented by |MA−MB|/MB (2, and satisfies the requirement that the sum atomic weight MB is larger than one-third of the molecular weight of the protecting material, and a solubility parameter SA of the moiety A and a solubility parameter SB of the moiety B satisfy a relationship represented by |SA (SB| (2. | 09-23-2010 |
20100237323 | ELECTROLUMINESCENT DEVICE - An electroluminescent device comprising a pair of electrodes, and an electroluminescent layer containing at least a luminescent layer, situated between the electrodes. The luminescent layer has a matrix material containing at least one organic compound, and quantum dots whose surfaces are protected by a protective material and that are dispersed in the matrix material. The protective material contains a first protective material. The absolute value of the ionization potential Ip(h), the absolute value of the electron affinity Ea(h), and the band gap Eg(h) of the first protective material, the absolute value of the ionization potential Ip(m), the absolute value of the electron affinity Ea(m), and the band gap Eg(m) of the organic compound, and the band gap Eg(q) of the quantum dots fulfill all of the conditions (A) to (C): (A) Ip(h)Ea(m)−0.1 eV, and (C) Eg(q)09-23-2010 | |
20100243985 | HIGH LIGHT-EXTRACTION EFFICIENCY LIGHT-EMITTING DIODE STRUCTURE - The present invention discloses a high light-extraction efficiency LED structure, wherein metallic pads and metallic mesh wires made of an aluminum-silver alloy are formed on an LED, whereby the high-reflectivity aluminum-silver alloy makes the light incident on the metallic pads and metallic mesh wires reflected once more or repeatedly and then emitted from the surface or lateral side of the LED, wherefore the present invention can decrease the light loss and increase the light-extraction efficiency. | 09-30-2010 |
20100243986 | HYBRID VERTICAL CAVITY LIGHT EMITTING SOURCES AND PROCESSES FOR FORMING THE SAME - Vertical cavity light emitting sources that utilize patterned membranes as reflectors are provided. The vertical cavity light emitting sources have a stacked structure that includes an active region disposed between an upper reflector and a lower reflector. The active region, upper reflector and lower reflector can be fabricated from single or multi-layered thin films of solid states materials (“membranes”) that can be separately processed and then stacked to form a vertical cavity light emitting source. | 09-30-2010 |
20100243987 | DEVICE OF LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a weakened structure, and can be automatically broken and a rough surface is thus formed. The weakened structure is formed with a specified height, and has pillar structures. The light-emitting structure is formed on the weakened structure. During a cooling process at room temperature, the weakened structure is automatically broken and a rough surface is thus formed. | 09-30-2010 |
20100243988 | Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device - A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction. | 09-30-2010 |
20100252806 | CARBON NANO-TUBE (CNT) LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a carbon nano-tube (CNT) light emitting device and a method of manufacturing the same. Specifically, the CNT light emitting device comprises: a CNT thin film formed using a CNT dispersed solution; a n-doping polymer formed on one end of the CNT thin film; a p-doping polymer formed on the other end of the CNT thin film; and a light emitting part between the n-doping polymer and the p-doping polymer. In addition, the method of manufacturing a CNT light emitting device comprises steps of: mixing CNTs with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; forming a CNT thin film using the CNT dispersed solution; coating a n-doping polymer on one end of the CNT thin film; and coating a p-doping polymer on the other end of the CNT thin film. According to the invention, the n-doping polymer and the p-doping polymer are respectively coated on the CNT having a CNT random network structure to implement a p-n junction, thereby implementing a light emitting device in a simple and low-priced process. | 10-07-2010 |
20100252807 | Metal ion sensor and fabricating method thereof - A metal ion sensor is provided. The metal ion sensor includes a nanoparticle core doped with a first luminescent material and a shell enclosing the nanoparticle core. The shell includes a second luminescent material and binding sites of outer metal ions. The first luminescent material and the second luminescent material emit light with mutually different colors when excited by an excitation source. The luminescence intensity of the light emitted from the second luminescent material varies in accordance with the binding amount of the outer metal ions, such that the emission color of the combined luminescence of the first luminescent material and the second luminescent material is changed. | 10-07-2010 |
20100252808 | NANOWIRE GROWTH ON DISSIMILAR MATERIAL - The present invention relates to growth of III-V semiconductor nanowires ( | 10-07-2010 |
20100252809 | LIGHT EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS - A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers. | 10-07-2010 |
20100264400 | White light emitting device - A light emitting device (LED) may include a first semiconductor layer; an active layer formed on the first semiconductor layer and configured to generate first light having a first wavelength; a second semiconductor layer, formed on the active layer; and a plurality of semiconductor nano-structures arranged apart from each other and formed on the second semiconductor layer. The nano-structures may be configured to at least partially absorb the first light and emit second light having a second wavelength different from the first wavelength. | 10-21-2010 |
20100264401 | MICRO-PIXEL ULTRAVIOLET LIGHT EMITTING DIODE - An ultra-violet light-emitting diode (LED) array, | 10-21-2010 |
20100270531 | GaN BASED LIGHT EMITTERS WITH BAND-EDGE ALIGNED CARRIER BLOCKING LAYERS - Band-edge aligned carrier blocking layers are introduced into wurtzite or zinc blende Gallium Nitride based diode laser and LEDs in order to prevent thermionic emission and the overflow of carriers at elevated operating temperatures. These blocking layers are located in the direct vicinity of the active zone of the light emitter, and are designed with material composition such that one of the band-edges of the layers is, either partially or fully, aligned with that of adjacent barrier or waveguide layer. This invention proposes GaN based QW structure with a AlGaN(AsPSb) electron-blocking layer on the p-side of quantum well and (InGa)AlN as hole-blocking layer. | 10-28-2010 |
20100270532 | NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE - A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer | 10-28-2010 |
20100276663 | GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM - In a GaN based semiconductor optical device | 11-04-2010 |
20100283034 | Concentration - gradient alloyed semiconductor quantum dots, LED and white light applications - The present invention involves concentration-gradients alloyed quantum dots that have shell modifications and ligands that lower the barrier for electronic quantum dot activation, and electronic and photonic applications of such quantum dots. The present invention also describes emissive layers using such quantum dots in electronic applications. | 11-11-2010 |
20100283035 | LIGHT EMITTING DEVICE - A light emitting device includes: an active layer including a multi-quantum well having a well layer and a barrier layer, the active layer including a non-emitting region and an emitting region formed around the non-emitting region; a first cladding layer provided on a first major surface of the active layer; a pad electrode provided above the first cladding layer so that its center is located near a center of the non-emitting region as viewed in a direction perpendicular to the first major surface; and a second cladding layer provided below a second major surface of the active layer opposite to the first major surface. A bandgap of the well layer in the non-emitting region is wider than a bandgap of the well layer in the emitting region and narrower than a bandgap of the first cladding layer. | 11-11-2010 |
20100283036 | Quantum dot light enhancement substrate and lighting device including same - A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein. | 11-11-2010 |
20100283037 | CORE-SHELL QUANTUM DOT FLUORESCENT FINE PARTICLES - Disclosed is an ultraviolet fluorescent material having high light emission efficiency, wherein the peak wavelength of ultraviolet light to be emitted can be controlled by having a quantum dot structure wherein a fine crystal of zinc oxide having an average diameter of 1-10 nm serves as a core, and the surface of the zinc oxide fine crystal is covered with at least one of LiGaO | 11-11-2010 |
20100288997 | SEMICONDUCTOR ELECTROLUMINESCENT DEVICE - Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer. | 11-18-2010 |
20100288998 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device comprises a substrate ( | 11-18-2010 |
20100288999 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - In a Group III nitride semiconductor light-emitting device which comprises a substrate ( | 11-18-2010 |
20100289000 | LIGHT-EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME - A manufacturing method of a light-emitting diode, includes the steps of: successively growing a first clad layer, an active layer and a second clad layer on a substrate; and patterning the first clad layer, the active layer and the second clad layer into a specified plane shape, and causing at least a part of an outer peripheral part of the active layer to protrude to an outside from at least one of the first clad layer and the second clad layer. | 11-18-2010 |
20100289001 | DEVICE CONTAINING NON-BLINKING QUANTUM DOTS - An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns. | 11-18-2010 |
20100289002 | Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof - Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced. | 11-18-2010 |
20100295014 | IMPROVEMENTS IN EXTERNAL LIGHT EFFICIENCY OF LIGHT EMITTING DIODES - A method to improve the external light efficiency of light emitting diodes, the method comprising etching an external surface of an n-type layer of the light emitting diode to form surface texturing, the surface texturing reducing internal light reflection to increase light output. A corresponding light emitting diode is also disclosed. | 11-25-2010 |
20100295015 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - A light emitting device includes a plurality of clusters spread on a surface of a substrate and a first semiconductor layer provided over the plurality of clusters. The first semiconductor layer may includes air gaps above the plurality of clusters. In addition, light emitting structure may include a first conductive semiconductor layer adjacent to the first semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. | 11-25-2010 |
20100295016 | FLUORESCENT FIBER CONTAINING SEMICONDUCTOR NANOPARTICLES - The present invention provides a luminescent fiber, which retains a certain shape with assembled nanoparticles, and a method for producing the luminescent fiber. Specifically, the present invention provides a luminescent fiber comprising silicon and semiconductor nanoparticles having a mean particle size of 2 to 12 nm, the luminescent fiber having a diameter of 20 nm to 2 μm, a length of 40 nm to 500 μm, an aspect ratio of 2 to 1,000, and photoluminescence efficiency of not less than 5%. | 11-25-2010 |
20100295017 | LIGHT EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted. | 11-25-2010 |
20100301306 | STRAIN-CONTROLLED ATOMIC LAYER EPITAXY, QUANTUM WELLS AND SUPERLATTICES PREPARED THEREBY AND USES THEREOF - Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon. | 12-02-2010 |
20100301307 | PLASMON ENHANCED LIGHT-EMITTING DIODES - Embodiments of the present invention are directed to light-emitting diodes. In one embodiment of the present invention, a light-emitting diode comprises at least one quantum well sandwiched between a first intrinsic semiconductor layer and a second semiconductor layer. An n-type heterostructure is disposed on a surface of the first intrinsic semiconductor layer, and a p-type heterostructure is disposed on a surface of the second intrinsic semiconductor layer opposite the n-type semiconductor heterostructure. The diode also includes a metal structure disposed on a surface of the light-emitting diode. Surface plasmon polaritons formed along the interface between the metal-structure and the light-emitting diode surface extend into the at least one quantum well increasing the spontaneous emission rate of the transverse magnetic field component of electromagnetic radiation emitted from the at least one quantum well. In certain embodiments, the electromagnetic radiation can be modulated at a rate of about 10 Gb/s or faster. | 12-02-2010 |
20100308300 | INTEGRATED CIRCUIT LIGHT EMISSION DEVICE, MODULE AND FABRICATION PROCESS - An integrated circuit device, which can be a light emission device such as a light emitting diode (LED), comprises a substrate, a plurality of device layers formed on a first surface of the substrate, including a first device layer and a second device layer, a first electrode formed on the first device layer, and a second electrode formed on a second surface of the substrate which is parallel and opposite to the first surface of the substrate. A plurality of substantially identical such devices can formed on a semiconductor wafer, where one or both of the first and second electrodes are shared by the plurality of devices prior to dicing the wafer. All of the devices can be tested simultaneously on the wafer, prior to dicing. Formation of the electrodes on opposite sides of the substrate allow the device to be directly connected to a mounting substrate, without any wire bonding. | 12-09-2010 |
20100308301 | Semiconductor light-emitting device - A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting portion formed on the second conductivity type cladding layer and the first current-blocking portion; a lower electrode formed on the back side of the substrate, a light-reflecting layer formed between the substrate and the light-emitting layer; a partial electrode formed on the surface of the light-reflecting layer and in a portion positioned below the first current-blocking portion; and a second current-blocking portion formed over the surface of the light-reflecting layer excluding the portion in which is formed the partial electrode. | 12-09-2010 |
20100314605 | VERTICAL DEEP ULTRAVIOLET LIGHT EMITTING DIODES - The invention is a vertical geometry light emitting diode capable of emitting light in the electromagnetic spectrum having a substrate, a lift-off layer, a strain relieved superlattice layer, a first doped layer, a multilayer quantum wells comprising alternating layers quantum wells and barrier layers, a second doped layer, a third doped layer and a metallic contact that is in a vertical geometry orientation. The different layers consist of a compound with the formula AlxlnyGa(1-x-y)N, wherein x is more than 0 and less than or equal to 1, y is from 0 to 1 and x+y is greater than 0 and less than or equal to 1. The barrier layer on each surface of the quantum well has a band gap larger than a quantum well bandgap. The first and second doped layers have different conductivities. The contact layer has a different conductivity than the third doped layer | 12-16-2010 |
20100314606 | LIGHT-EMITTING DEVICE - A light-emitting device is disclosed, including a light-emitting element and a surface plasmon coupling element, having an intermediary layer connected to the light-emitting element and a metal structure on the intermediary layer, wherein the intermediary layer is conductive under low-frequency injection current and has the characteristics as dielectric material in a wavelength range 100 nm˜20000 nm. | 12-16-2010 |
20100314607 | DIODE HAVING VERTICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode. | 12-16-2010 |
20100320440 | DEEP ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING SAME - An ultra-violet emitting light-emitting device and method for fabricating an ultraviolet light emitting device (LED) with an AlInGaN multiple-quantum-well active region exhibiting stable cw-powers. The LED includes a template with an ultraviolet light-emitting structure on it. The template includes a first buffer layer on a substrate, then a second buffer layer on the first preferably with a strain-relieving layer in both buffer layers. Next there is a semiconductor layer having a first type of conductivity followed by a layer providing a quantum-well region with an emission spectrum ranging from 190 nm to 369 nm. Another semiconductor layer having a second type of conductivity is applied next. Two metal contacts are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the LED. | 12-23-2010 |
20100320441 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1−xN layer on the first electrode layer, forming on the first InxGa1−xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer. | 12-23-2010 |
20100320442 | NANOSTRUCTURED ELECTROLUMINESCENT DEVICE AND DISPLAY - An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers. | 12-23-2010 |
20100327256 | CONTROLLING PIT FORMATION IN A III-NITRIDE DEVICE - A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer. | 12-30-2010 |
20100327257 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a λ/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side. | 12-30-2010 |
20110001120 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION - A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer. | 01-06-2011 |
20110001121 | COMPOUND SEMICONDUCTORS - Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region. | 01-06-2011 |
20110001122 | COMPOUND SEMICONDUCTORS - Compound semiconductors capable of emitting light in the green spectrum are provided. The compound semiconductors may display improved quantum efficiencies when applied to various optical devices. Also, light emitting diodes and light emitting diode modules comprising the compound semiconductors are provided. | 01-06-2011 |
20110001123 | Nitride semiconductor light emitting device - A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer. | 01-06-2011 |
20110006281 | SEMICONDUCTOR NANOCRYSTAL AND PREPARATION METHOD THEREOF - A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal. | 01-13-2011 |
20110006282 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, OPTICAL MODULE, TRANSMITTER, AND OPTICAL COMMUNICATION SYSTEM - A semiconductor light-emitting device includes a GaAs substrate; and an active layer provided over the GaAs substrate, the active layer including: a lower barrier layer lattice-matched to the GaAs substrate; a quantum dot provided on the lower barrier layer; a strain relaxation layer covering a side of the quantum dot; and an upper barrier layer contacting the top of the quantum dot, at least a portion of the upper barrier layer contacting the top of the quantum dot being lattice-matched to the GaAs substrate, and having a band gap larger than a band gap of the quantum dot and smaller than a band gap of GaAs. | 01-13-2011 |
20110006283 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer. | 01-13-2011 |
20110012087 | SEMICONDUCTOR NANOCRYSTALS - A semiconductor nanocrystal include a first I-III-VI semiconductor material and have a luminescence quantum yield of at least 10%, at least 20%, or at least 30%. The nanocrystal can be substantially free of toxic elements. Populations of the nanocrystals can have an emission FWHM of no greater than 0.35 eV. | 01-20-2011 |
20110012088 | OPTOELECTRONIC SEMICONDUCTOR BODY WITH A TUNNEL JUNCTION AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR BODY - An optoelectronic semiconductor body includes an epitaxial semiconductor layer sequence including a tunnel junction including an intermediate layer between an n-type tunnel junction layer and a p-type tunnel junction layer, wherein the intermediate layer has an n-barrier layer facing the n-type tunnel junction layer, a p-barrier layer facing the p-type tunnel junction layer, and a middle layer with a material composition differing from material compositions of the n-barrier layer and the p-barrier layer; and an active layer that emits electromagnetic radiation. | 01-20-2011 |
20110012089 | LOW RESISTANCE ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light. | 01-20-2011 |
20110017972 | LIGHT EMITTING STRUCTURE WITH INTEGRAL REVERSE VOLTAGE PROTECTION - A light emitting structure having reverse voltage protection (RVP) is provided along with disclosure of a method for fabricating the light emitting structure. The light emitting structure includes a substrate having a first face, a second face, and a p-n junction formed within the substrate between a p-type layer and an n-type layer, wherein the p-type layer and the n-type layer are adapted as a RVP diode. A buffer layer is provided on the substrate, and a light emitting diode (LED) is fabricated on the buffer layer. The LED is then electrically coupled to the RVP diode in an anti-parallel diode pair (APDP) configuration. | 01-27-2011 |
20110017973 | Nanodevice, Transistor Comprising the Nanodevice, Method for Manufacturing the Nanodevice, and Method for Manufacturing the Transistor - A nanodevice, a transistor including the nanodevice, a method of manufacturing the nanodevice, and a method of manufacturing the transistor including the nanodevice are provided. The nanodevice includes a substrate, a mask layer located on the substrate and having at least one opening, and a nanotube formed on the substrate through the opening along an edge of the opening. The nanotube extends through the opening in a direction substantially perpendicular to a surface of the substrate. | 01-27-2011 |
20110017974 | COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a compound semiconductor light emitting device capable of optimizing strain applied to an active layer and a clad layer to minimize a piezoelectric field and spontaneous polarization in an active layer and to maximize light emission efficiency. In a compound semiconductor light emitting device having a structure in which a buffer layer, a first clad layer, an active layer, and a second clad layer are sequentially deposited, a strain induction layer and a strain control layer intersect at least once and are deposited between the buffer layer and the first clad layer, the strain induction layer performs induction so that compressive strain to be applied to the active layer is dispersed to the strain control layer, and the compressive strain applied to the active layer is reduced as the compressive strain is applied to the strain control layer. | 01-27-2011 |
20110017975 | ORGANIC OPTOELECTRONIC DEVICE ELECTRODES WITH NANOTUBES - An electrode for use in an organic optoelectronic device is provided. The electrode includes a thin film of single-wall carbon nanotubes. The film may be deposited on a substrate of the device by using an elastomeric stamp. The film may be enhanced by spin-coating a smoothing layer on the film and/or doping the film to enhance conductivity. Electrodes according to the present invention may have conductivities, transparencies, and other features comparable to other materials typically used as electrodes in optoelectronic devices. | 01-27-2011 |
20110017976 | ULTRAVIOLET LIGHT EMITTING DIODE/LASER DIODE WITH NESTED SUPERLATTICE - A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al | 01-27-2011 |
20110024720 | High-efficiency LED - A high-efficiency LED includes: a substrate, an epitaxial layer structure, a cathode, an anode, a transparent sealing compound and a polyimide layer. The polyimide layer covers surfaces of the epitaxial layer structure and the substrate. The transparent sealing compound covers the polyimide layer, the substrate, the epitaxial layer structure, the cathode and the anode. The polyimide layer of the present invention has a refractive index higher than that of packaging materials in prior art, so as to reduce total internal reflection and optical consumption caused by light scattered from the epitaxial layer structure and the transparent sealing compound. | 02-03-2011 |
20110024721 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a semiconductor substrate and an active layer which is formed on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures | 02-03-2011 |
20110024722 | OPTICAL DEVICES FEATURING NONPOLAR TEXTURED SEMICONDUCTOR LAYERS - A semiconductor emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting. | 02-03-2011 |
20110031472 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-ELECTRODE - A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer. | 02-10-2011 |
20110037049 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a nitride semiconductor light-emitting device including a substrate, a pair of p-type and n-type clad layers formed on the substrate, and an active layer having a single quantum well structure or a multiple quantum well structure, which is sandwiched between the p-type clad layer and the n-type clad layer, and includes a quantum well layer and a pair of barrier layers each having a larger bandgap than that of the quantum well layer, the quantum well layer being sandwiched between the pair of barrier layers. Each of the pair of barrier layers has a multi-layer structure including, starting from the quantum well layer side, a first subbarrier layer having a composition of In | 02-17-2011 |
20110037050 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device (LED) includes a light emitting structure and a reflective layer. The light emitting structure includes a semiconductor layer of a first conductivity type, a light emitting layer, and a semiconductor layer of a second conductivity type, and the reflective layer is provided adjacent to the semiconductor layer of the second conductivity-type. The light emitting layer includes multiple quantum wells, and a distance between adjacent quantum wells is about λ/2n±Δ, where λ represents a wavelength of emitted light, n represents an average refractive index of a medium disposed between the reflective layer and the light emitting layer, and Δ≦λ/8n. | 02-17-2011 |
20110037051 | OPTIMIZATION OF POLISHING STOP DESIGN - The present invention provides a method of fabricating vertical LED structures in which the substrate used for epitaxial layer growth is removed through polishing. The polishing technique used in an exemplary embodiment is chemical mechanical polishing using polish stops to provide a sufficiently level plane. Polish stops are provided in the multilayer structure before polishing the surface, the hardness of the polish stop material being greater than the hardness of the material that needs to be removed. Consequently, vertical LEDs can be produced at a lower cost and higher yield compared to either laser lift-off or conventional polishing. Exemplary vertical LEDs are GaN LEDs. The polish stops may be removed by saw dicing, laser dicing or plasma etching. | 02-17-2011 |
20110037052 | METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES - A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes. | 02-17-2011 |
20110037053 | HIGH QUANTUM EFFICIENCY LIGHTING DEVICE WITH LIGHT INFLUENCING ELEMENT - The present invention relates to a high quantum efficiency lighting device comprising a solid state light source ( | 02-17-2011 |
20110042643 | Optoelectronic Semiconductor Chip Having a Multiple Quantum Well Structure - An optoelectronic semiconductor chip is specified, which has an active zone ( | 02-24-2011 |
20110042645 | NITRIDE SEMICONDUCTOR LED AND FABRICATION METHOD THEREOF - A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an In | 02-24-2011 |
20110049468 | LED AND LED DISPLAY AND ILLUMINATION DEVICES - Light emitting chips, light emitting unit cells and methods of forming light emitting chips are provided. A light emitting chip includes a light emission structure having a p-type semiconductor layer, an n-type semiconductor layer, and an active layer therebetween. At least one light emitting unit is formed from the light emission structure including a light emitting diode (LED) and a plurality of light receiving diode (LRD) portions. The LRD portions are serially connected and configured to surround the LED portion. The LRD portions are optically coupled to the LED portion to receive total internal reflection (TIR) light from the LED portion and convert the TIR light to a photocurrent. | 03-03-2011 |
20110049469 | Enhanced P-Contacts For Light Emitting Devices - An optoelectronic light emitting semiconductor device is provided comprising an active region, a p-type Group III nitride layer, an n-type Group III nitride layer, a p-side metal contact layer, an n-side metal contact layer, and an undoped tunneling enhancement layer. The p-side metal contact layer is characterized by a work function W satisfying the following relation: | 03-03-2011 |
20110049470 | DIODE HAVING VERTICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode. | 03-03-2011 |
20110049471 | EFFICIENT CARRIER INJECTION IN A SEMICONDUCTOR DEVICE - Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity. | 03-03-2011 |
20110049472 | LIGHT EMITTING DIODE - A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening. | 03-03-2011 |
20110057165 | EPITAXIAL FORMATION STRUCTURES AND ASSOCIATED METHODS OF MANUFACTURING SOLID STATE LIGHTING DEVICES - Epitaxial formation structures and associated methods of manufacturing solid state lighting (“SSL”) devices with target thermal expansion characteristics are disclosed herein. In one embodiment, an SSL device includes a composite structure having a composite CTE temperature dependency, a formation structure on the composite structure, and an SSL structure on the formation structure. The SSL structure has an SSL temperature dependency, and a difference between the composite CTE and SSL temperature dependencies is below 3 ppm/° C. over the temperature range. | 03-10-2011 |
20110057166 | NONPOLAR III-NITRIDE LIGHT EMITTING DIODES WITH LONG WAVELENGTH EMISSION - A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission. | 03-10-2011 |
20110057167 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 03-10-2011 |
20110062412 | LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer. | 03-17-2011 |
20110062413 | LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF - A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage. | 03-17-2011 |
20110062414 | LIGHT EMITTING DEVICES - A new light emitting device is disclosed, including a polarizing surface layer, a light emitting layer which emits light at a wavelength, and a light transformation layer disposed between the light emitting layer and the reflective layer, wherein the light emitting layer is disposed between the reflective layer and the polarizing surface layer, and an optical thickness between the light emitting layer and the reflective layer is less than a value of five times of a quarter of the wavelength. | 03-17-2011 |
20110068321 | Semiconductor nanoparticle-based materials - In various embodiment, a primary particle includes a primary matrix material containing a population of semiconductor nanoparticles, with each primary particle further comprising an additive to enhance the physical, chemical and/or photo-stability of the semiconductor nanoparticles. A method of preparing such particles is described. Composite materials and light-emitting devices incorporating such primary particles are also described. | 03-24-2011 |
20110068322 | Semiconductor Nanoparticle-Based Materials - In various embodiments, the present invention relates to a plurality of coated primary particles, each primary particle including a primary matrix material and containing a population of semiconductor nanoparticles, wherein each primary particle is provided with a separate layer of a surface coating material. Various methods of preparing such particles are described. Composite materials and light-emitting devices incorporating such primary particles are also described. | 03-24-2011 |
20110073837 | HIGH-PERFORMANCE SINGLE-CRYSTALLINE N-TYPE DOPANT-DOPED METAL OXIDE NANOWIRES FOR TRANSPARENT THIN FILM TRANSISTORS AND ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE DISPLAYS - Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In | 03-31-2011 |
20110073838 | ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION - Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and a second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over a strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs. | 03-31-2011 |
20110079765 | INFRARED DETECTOR, INFRARED DETECTING APPARATUS, AND METHOD OF MANUFACTURING INFRARED DETECTOR - An infrared detector comprises: a reflection portion which transmits far- and middle-infrared rays and which reflects near-infrared and visible rays; a photo-current generating portion having a plurality of layered quantum dot structures in each of which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a plurality of layered quantum well structures into each of which electrons of the photo-current generated by the photo-current generating portion are injected and in each of which the electrons thus injected thereinto are recombined with holes so as to emit near-infrared and visible rays; and a photo-detecting portion which detects the near-infrared and visible rays emitted from the light emitting portion and which detects the near-infrared and visible rays emitted from the light emitting portion and then reflected by the reflection portion. The reflection portion, the photo-current generating portion, and the light emitting portion are made of group III-V compound semiconductors that are layered on top of a semiconductor substrate. | 04-07-2011 |
20110079766 | PROCESS FOR FABRICATING III-NITRIDE BASED NANOPYRAMID LEDS DIRECTLY ON A METALIZED SILICON SUBSTRATE - A nanopyramid LED and method for forming. The nanopyramid LED includes a silicon substrate, a III-nitride layer deposited thereon, a metal layer deposited thereon; and a nanopyramid LED grown in ohmic contact with the metal layer. The nanopyramid LED can be seeded on the III-nitride layer or metal layer. The metal layer can be a reflecting surface for the nanopyramid LED. The method for forming nanopyramid LEDs includes obtaining a silicon substrate, depositing a III-nitride layer thereon, depositing a metal layer thereon, depositing a dielectric growth layer thereon, etching a dielectric growth template in the growth layer, and growing III-nitride nanopyramid LEDs through the dielectric growth template in ohmic contact with the metal layer. The etching can be performed by focused ion beam etching. The etching can stop in the metal layer or III-nitride layer, so that the nanopyramid LEDs can seed off the metal layer or III-nitride layer, respectively. | 04-07-2011 |
20110079767 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device comprises: a layer structure including an active region ( | 04-07-2011 |
20110084249 | LIGHT-EMITTING DEVICE USING CLAD LAYER CONSISTING OF ASYMMETRICAL UNITS - The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into the active layer is arbitrarily controlled through the clad layer, so that the internal quantum efficiency can be improved. The light-emitting device using the clad layer consisting of the asymmetric units according to the present invention is characterized in that the clad layer is provided on at least one of the upper and lower portions of the active layer and consists of one or plural units, wherein the unit has a structure in which the first to n | 04-14-2011 |
20110089398 | Method for improving internal quantum efficiency of Group-III nitride-based light emitting device - A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device. | 04-21-2011 |
20110089399 | LIGHT EMITTING DEVICE WITH A STAIR QUANTUM WELL STRUCTURE - A light emitting device with a stair quantum well structure in an active region. The stair quantum well structure may include a primary well and a single step or multiple steps. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device. The stair quantum structure improves the radiative efficiency of the light emitting device. | 04-21-2011 |
20110089400 | NANOWIRE WRAP GATE DEVICES - The present invention provides a semiconductor device comprising at least a first semiconductor nanowire ( | 04-21-2011 |
20110089401 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ELECTRODE AND MANUFACTURING METHOD FOR THE ELEMENT, AND LAMP - A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode ( | 04-21-2011 |
20110095260 | Light emitting device - A light emitting device may include a semiconductor light emitting diode which may include a first nitride semiconductor layer doped as an n-type, a second nitride semiconductor layer doped as a p-type, and a first active layer provided between the first and second nitride semiconductor layers, and a nano light emitting diode array in which a plurality of nano light emitting diodes may be arranged on the semiconductor light emitting diode so as to be separated from each other. | 04-28-2011 |
20110095261 | FLEXIBLE DEVICES INCLUDING SEMICONDUCTOR NANOCRYSTALS, ARRAYS, AND METHODS - The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed over the emissive layer comprising semiconductor nanocrystals, wherein, when the device is curved, the emissive layer comprising semiconductor nanocrystals lies substantially in the neutral plane of the device. In another embodiment, a light-emitting device includes an emissive layer comprising semiconductor nanocrystals disposed between two flexible substrates, a first electrode disposed over the emissive layer comprising semiconductor nanocrystals, and a second electrode disposed under the emissive layer comprising semiconductor nanocrystals. In certain preferred embodiments, at least one charge transport layer is disposed between one of the electrodes and the layer comprising semiconductor nanocrystals. | 04-28-2011 |
20110095262 | SEMICONDUCTOR LIGHT EMISSION DEVICE AND MANUFACTURING METHOD THE SAME - A semiconductor light emission device is disclosed. The semiconductor light emission device includes: a substrate; a current concentration preventing pattern formed in a mesh net shape on the substrate; an n-type clad layer formed on the substrate loaded with the current concentration preventing pattern; an active layer and a p-type clad layer sequentially formed on the n-type clad layer; an n-type electrode formed on a part of the n-type clad layer which is exposed by partially etching the p-type clad layer and active layer; and a p-type electrode formed on the p-type clad layer. The current concentration preventing pattern is formed in a double layer structure which includes a first layer formed from one material of SiO and SiN and on the substrate, and a second layer formed from a metal material and on the first layer. | 04-28-2011 |
20110095263 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer. | 04-28-2011 |
20110095264 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer. | 04-28-2011 |
20110095265 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships: | 04-28-2011 |
20110101300 | REFLECTING LIGHT EMITTING STRUCTURE AND METHOD OF MANUFACTURE THEREOF - A reflecting light emitting structure includes a substrate having a plurality of grooves formed in a first face of the substrate is disclosed. The first face is in a first crystallographic plane. Each of the plurality of grooves includes a first sidewall that is coplanar with a second crystallographic plane and a second sidewall that is coplanar with a third crystallographic plane. A buffer layer is provided on the substrate to reduce mechanical strain between the substrate and a light emitting diode (LED) fabricated on the buffer layer. | 05-05-2011 |
20110101301 | LIGHT EMITTING DEVICE WITH A COUPLED QUANTUM WELL STRUCTURE - A light emitting device with a coupled quantum well structure in an active region. The coupled quantum well structure may include two or more wells are separated by one or more mini-barriers, and the wells and mini-barriers together are sandwiched by barriers. The coupled quantum well structure provides almost the same effect as a wide quantum well, due to the coupling of the wavefunctions through the mini-barrier. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device. | 05-05-2011 |
20110101302 | WAFER-SCALE FABRICATION OF SEPARATED CARBON NANOTUBE THIN-FILM TRANSISTORS - Methods, materials, systems and apparatus are described for depositing a separated nanotube networks, and fabricating, separated nanotube thin-film transistors and N-type separated nanotube thin-film transistors. In one aspect, a method of depositing a wafer-scale separated nanotube networks includes providing a substrate with a dielectric layer. The method includes cleaning a surface of the wafer substrate to cause the surface to become hydrophilic. The cleaned surface of the wafer substrate is functionalized by applying a solution that includes linker molecules terminated with amine groups. High density, uniform separated nanotubes are assembled over the functionalized surface by applying to the functionalized surface a separated nanotube solution that includes semiconducting nanotubes. | 05-05-2011 |
20110101303 | LIGHT-EMITTING DEVICE COMPRISING SEMICONDUCTOR NANOCRYSTAL LAYER FREE OF VOIDS AND METHOD FOR PRODUCING THE SAME - A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability. | 05-05-2011 |
20110101304 | LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer over the support substrate, a second electrode layer, which includes a current blocking layer and a reflective current spreading layer, over the wafer bonding layer, a current injection layer over the second electrode layer, a superlattice structure layer over the current injection layer, a second conductive semiconductor layer over the superlattice structure layer, an active layer over the second conductive semiconductor layer, a first conductive semiconductor layer over the active layer, and a first electrode layer over the first conductive semiconductor layer. | 05-05-2011 |
20110108796 | Laser spike annealing for GaN LEDs - Methods of performing laser spike annealing (LSA) in forming gallium nitride (GaN) light-emitting diodes (LEDs) as well as GaN LEDs formed using LSA are disclosed. An exemplary method includes forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method also includes performing LSA by scanning a laser beam over the p-GaN layer. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance. | 05-12-2011 |
20110108797 | SINGLE CHIP TYPE WHITE LED DEVICE - A single chip type white light LED device includes a first semiconductor layer of a first doping type, a ZnMnSeTe (Zinc Manganese Selenium Tellurium) red light quantum well, a first barrier layer disposed on the ZnMnSeTe red light quantum well, a green light emitting layer including green light quantum dots disposed on the first barrier layer, a second barrier layer disposed on the green light emitting layer, a blue light emitting layer including blue light quantum dots disposed on the second barrier layer, a third barrier layer disposed on the blue light emitting layer, and a second semiconductor layer disposed on the third barrier layer. | 05-12-2011 |
20110108798 | LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer. | 05-12-2011 |
20110114915 | Light emitting device and method of fabricating the same - A light emitting device may include a plurality of nano-structures having a strip shape, each including a first nano-structure and a second nano-structure, the first nano-structures being the same height on the buffer layer. | 05-19-2011 |
20110114916 | III-NITRIDE SEMICONDUCTOR OPTICAL DEVICE AND EPITAXIAL SUBSTRATE - A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×10 | 05-19-2011 |
20110114917 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface. | 05-19-2011 |
20110121259 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses. | 05-26-2011 |
20110121260 | QUANTUM DOT PHOSPHOR FOR LIGHT EMITTING DIODE AND METHOD OF PREPARING THE SAME - Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured. | 05-26-2011 |
20110121261 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced. | 05-26-2011 |
20110121262 | LED DEVICE WITH RE-EMITTING SEMICONDUCTOR CONSTRUCTION AND CONVERGING OPTICAL ELEMENT - A light source is provided comprising an LED component having an emitting surface, which may comprise: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor construction which comprises a second potential well not located within a pn junction having an emitting surface; or which may alternately comprise a first potential well located within a pn junction and a second potential well not located within a pn junction; and which additionally comprises a converging optical element. | 05-26-2011 |
20110127489 | Light emitting device and method of manufacturing the same - Example embodiments relate to a light emitting device and a method of fabricating the light emitting device. The light emitting device may include an n-type clad layer including a plurality of nitride semiconductor layers, at least one interlayer disposed between the plurality of nitride semiconductor layers, a via hole in which a first electrode is formed, a p-type clad layer, and an active layer between the n-type clad layer and the p-type clad layer. | 06-02-2011 |
20110127490 | Method of Growing Uniform Semiconductor Nanowires without Foreign Metal Catalyst and Devices Thereof - Amongst the candidates for very high efficiency solid state lights sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects. Further manufacturing requirements demand reproducible nanowire diameter, length etc to allow these nanowires to be embedded within device structures. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group III—nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. The technique also allows for unique dot-within-a-dot nanowire structures. | 06-02-2011 |
20110127491 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed is a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device may include a first conductive semiconductor layer including first conductive impurities, a second conductive semiconductor layer including second conductive impurities different from the first conductive impurities, an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, and an AlInN-based semiconductor layer interposed between the active layer and the second conductive semiconductor layer while making contact with both of the active layer and the second conductive semiconductor and including the second conductive impurities. | 06-02-2011 |
20110133154 | LIGHT-EMITTING DEVICE - A light emitting device includes: a laminated body including a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer, the laminated body being made of In | 06-09-2011 |
20110133155 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first conductive type semiconductor layer; an active layer including a barrier layer and a well layer alternately disposed on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer. At least one well layer includes an indium cluster having a density of 1E11/cm | 06-09-2011 |
20110133156 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising a conductive type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer. | 06-09-2011 |
20110133157 | SURFACE PLASMON DISPERSION ENGINEERING VIA DOUBLE-METALLIC AU/AG LAYERS FOR NITRIDE LIGHT-EMITTING DIODES - A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate. | 06-09-2011 |
20110133158 | METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS - A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas. | 06-09-2011 |
20110133159 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER - A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped semiconductor layer, wherein part of the first doped semiconductor layer is passivated, and wherein the passivated portion of the first doped semiconductor layer substantially insulates the first electrode from the edges of the first doped semiconductor layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped semiconductor layer and a passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. | 06-09-2011 |
20110140075 | LIGHT-EMITTING DEVICE INCLUDING QUANTUM DOTS - A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed. | 06-16-2011 |
20110140076 | LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic contact layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer. | 06-16-2011 |
20110140077 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, a second conductive semiconductor layer over the active layer, a superlattice structure layer over the second conductive semiconductor layer, and a first current spreading layer including a transmissive conductive thin film over the superlattice structure layer. | 06-16-2011 |
20110140078 | LIGHT-EMITTING DEVICE AND METHOD OF MAKING THE SAME - This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting diode chip comprising a plurality of light-emitting diode units and at least one electrical connecting layer. The light-emitting diode units are electrically connected with each other through the electrical connecting layer. Each of the light-emitting diode units comprises a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting device further comprises a bonding layer; and a carrier bonded to the light-emitting diode chip by the bonding layer. The electrical connecting layer is formed between the light-emitting diode units and the bonding layer. | 06-16-2011 |
20110140079 | Semiconductor Light Emitting Device - The present disclosure relates to a semiconductor light-emitting device which includes: a light-emitting layer composed of an active layer and of barrier layers formed as superlattice layers and disposed on and under the active layer to relieve stresses applied to the active layer and reduce the sum of electric fields generated in the active layer by the spontaneous polarization and the piezo; an N-type contact layer injecting electrons into the light-emitting layer; and a P-type contact layer disposed opposite to the N-type contact layer with respect to the light-emitting layer and injecting holes into the light-emitting layer, wherein the active layer contains InGaN, and the barrier layers are formed by alternately stacking of an AlGaN thin film and an InGaN thin film. | 06-16-2011 |
20110140080 | METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE - One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration. | 06-16-2011 |
20110140081 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION - A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching part of the first passivation layer to expose the first doped semiconductor layer. A first electrode is then formed, which is coupled to the first doped semiconductor layer. Next, the multilayer structure is bonded to a second substrate; and the first substrate is removed. A second electrode is formed, which is coupled to the second doped semiconductor layer. Further, a second passivation layer is formed, which substantially covers the sidewalls of multilayer structure and part of the surface of the second doped semiconductor layer which is not covered by the second electrode. | 06-16-2011 |
20110147699 | Auger Rate Suppression in Confined Structures - The present invention is generally directed to a method of suppressing the Auger rate in confined structures, comprising replacing an abrupt confinement potential with either a smooth confinement potential or a confinement potential of a certain size found by increasing the confinement potential width until the Auger recombination rate undergoes strong oscillations and establishes a periodic minima. In addition, the present invention provides for the design of structures with high quantum efficiency. | 06-23-2011 |
20110147700 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device may include a first conductive semiconductor layer, an active layer adjacent to the first conductive semiconductor layer and a second conductive semiconductor layer adjacent to the active layer. The active layer may include a first quantum well layer, a second quantum well layer and a barrier layer between the first quantum well layer and the second quantum well layer. The first quantum well layer may include a first plurality of sub-barrier layers and a first plurality of sub-quantum well layers, and the second quantum well layer may include a second plurality of sub-barrier layers and a second plurality of sub-quantum well layers. A bandgap of the first quantum well layer may be different than a bandgap of the second quantum well layer. | 06-23-2011 |
20110147701 | IMAGE DISPLAY DEVICE - An image display device includes a display surface constituted of a plurality of pixels, each of the pixels having a light-emitting layer, a front panel arranged at the ambient light entering side relative to the light-emitting layer, and a structure layer arranged between the light-emitting layer and the front panel. The structure layer has a structure containing particles arranged in a surrounding region and showing a refractive index distribution in a plane parallel to the display surface, each of the particles being constituted of a core and a shell forming an outer peripheral region relative to the core. The core, the shell, and the front panel and/or the surrounding region have different respective refractive indexes satisfying the requirement of N | 06-23-2011 |
20110147702 | NITRIDE BASED QUANTUM WELL LIGHT-EMITTING DEVICES HAVING IMPROVED CURRENT INJECTION EFFICIENCY - A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 Å and 24 Å thick, respectively. | 06-23-2011 |
20110147703 | ABBREVIATED EPITAXIAL GROWTH MODE (AGM) METHOD FOR REDUCING COST AND IMPROVING QUALITY OF LEDs AND LASERS - The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates. | 06-23-2011 |
20110147704 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYER - A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layer. The device also includes a first electrode coupled to the first doped semiconductor layer and a second electrode coupled to the second doped semiconductor layer. The device further includes a first passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and the part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. The first passivation layer is formed through an oxidation technique. The device further includes a second passivation layer overlaying the first passivation layer. | 06-23-2011 |
20110147705 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SILICONE PROTECTIVE LAYER - One embodiment of the present invention provides a semiconductor light-emitting device which includes: a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, a multi-quantum-well (MQW) active layer situated between the first and the second doped semiconductor layers. The device further includes a first electrode coupled to the first doped semiconductor layer, a second electrode coupled to the second doped semiconductor layer, and a silicone protective layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. | 06-23-2011 |
20110155997 | Vertical Light emitting diode and manufacturing method of the same - The vertical light emitting diode includes a substrate having a plurality of penetrating via-holes, a plurality of nitride semiconductor layers formed on the substrate, a first electrode formed on the plurality of nitride semiconductor layers, and a second electrode formed to fill the plurality of via-holes thereby contacting part of the plurality of nitride semiconductor layers. | 06-30-2011 |
20110155998 | OSCILLATION DEVICE - An oscillation device for oscillating a terahertz wave includes a substrate, an active layer which is provided on an upper portion of the substrate and which generates a terahertz wave by intersubband transition of carrier, and a luminous layer which is provided on an upper portion of the substrate and which generates light by interband transition of carrier. In addition, the luminous layer is arranged at a position at which the light generated in the luminous layer can radiate on the active layer. | 06-30-2011 |
20110155999 | SEMICONDUCTOR LIGHT-EMITTING DEVICES HAVING CONCAVE MICROSTRUCTURES PROVIDING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR PRODUCING SAME - A conventional semiconductor LED is modified to include a microlenslayer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness. | 06-30-2011 |
20110156000 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device and the device resulted thereof is disclosed. In one aspect, the device has a heterogeneous layer stack of one or more III-V type materials, at least one transmission layer of the layer stack having a roughened or textured surface for enhancement of light transmission. The method includes (a) growing the transmission layer of a III-V type material, (b) providing a mask layer on the transmission layer, the mask layer leaving first portions of the transmission layer exposed, and (c) partially decomposing the first exposed portions of the transmission layer. Suitably redeposition occurs in a single step with decomposition, so as to obtain a textured surface based on crystal facets of a plurality of grown crystals. The resulting device has a light-emitting element. The transmission layer hereof is suitably present at the top side. | 06-30-2011 |
20110156001 | NITRIDE-BASED LIGHT-EMITTING DEVICE - A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer. | 06-30-2011 |
20110156002 | LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS - Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system. | 06-30-2011 |
20110163292 | Nanowire Array-Based Light Emitting Diodes and Lasers - Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source. Heterostructures and superlattices grown along the lengths of the nanowires allow the confinement of photons in the quantum well to enhance the efficiency and as well as color tuning. | 07-07-2011 |
20110163293 | Vertical Light-Emitting Diode and Manufacture Method Thereof - The present application describes a vertical light-emitting diode (VLED) and its manufacture method that use the combination of a reflective layer, a transparent conducting layer and transparent dielectric layer as structural layers for promoting uniform current distribution and increasing light extraction. In the VLED, a transparent conducting layer is formed on a first outer surface of a stack of multiple group III nitride semiconductor layers. A transparent dielectric layer is then formed on a side of the transparent conducting layer opposite the side of the multi-layer structure. A first electrode structure is then formed on the transparent dielectric layer in electrical contact with the transparent conducting layer via a plurality of contact windows patterned through the transparent dielectric layer. The transparent conducting layer and the transparent dielectric layer are used as structural layers for improving light extraction. | 07-07-2011 |
20110163294 | LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer on the support substrate, a current spreading layer on the wafer bonding layer, a second conductive semiconductor layer on the current spreading layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, a surface modification layer on the first conductive semiconductor layer, and a first electrode layer on the surface modification layer. | 07-07-2011 |
20110163295 | SEMICONDUCTOR WITH LOW DISLOCATION - A semiconductor includes a semiconductor layer, a plurality of recesses and a blocking layer. The recesses are formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. The blocking layer is filled in each recess. The semiconductor further includes a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer, and the re-epitaxial semiconductor layer laterally overgrows toward areas of the recesses for overlaying the blocking layer. | 07-07-2011 |
20110168970 | OPTOELECTRONIC LIGHT EMITTING STRUCTURE - A light emitting structure comprising a hot electron source and a layer of ptoelectronic material disposed thereon and optionally p-type material disposed on the optoelectronic material. For example, a light emitting structure that comprises, in order, a polycrystalline silicon layer, a silicon dioxide layer, a zinc oxide layer and an indium tin oxide (ITO) layer. When a sufficient voltage is applied across the layers, light is generated. | 07-14-2011 |
20110168971 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region. | 07-14-2011 |
20110168972 | LED WITH UNIFORM CURRENT SPREADING AND METHOD OF FABRICATION - A lateral light emitting diode comprises a layer stack disposed on one side of a substrate, the layer stack including a p-type layer, n-type layer, and a p/n junction formed therebetween. The LED may further include a p-electrode disposed on a first side of the substrate and being in contact with the p-type layer on an exposed surface and an n-electrode disposed on the first side of the substrate and being in contact with an exposed surface of an n | 07-14-2011 |
20110168973 | LIGHT GENERATING DEVICE INCLUDING COMPOUND SEMICONDUCTOR AND METHOD OF DETERMINING COMPOUND RATIO OF COMPOUND SEMICONDUCTOR FOR LIGHT GENERATING DEVICE - A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elements of compound semiconductor. | 07-14-2011 |
20110168974 | GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The object of the present invention is to improve extraction efficiency of light of a Group III nitride-based compound semiconductor light-emitting device of a multiple quantum well structure. The device comprises a multiple quantum well structure comprising a well layer comprising a semiconductor including at least In for composition, a protective layer which comprises a semiconductor including at least Al and Ga for composition and has a band gap larger than a band gap of the well layer and is formed on and in contact with the well layer in a positive electrode side. And also the device comprises a barrier layer comprising a band gap which is larger than a band gap of the well layer and is smaller than a band gap of the protective layer, and formed on and in contact with the protective layer in a positive electrode side and a periodical structure of the well layer, the protective layer and the barrier layer. | 07-14-2011 |
20110168975 | CAGED QUANTUM DOTS - Semiconductor nanocrystals known as quantum dots (QD) are caged by being associated with a molecule such as an orth-Nitrobenzyl (ONB) group. The luminescence of the QD is suppressed until activated by violet or ultra violet light. | 07-14-2011 |
20110168976 | MICRO- AND NANO-STRUCTURED LED AND OLED DEVICES - Structured LED devices and component structures with improved efficiency and reduced defects are enabled by the use of micro- or nano-structured features that reduce lattice strain and improve p-doping in inorganic LEDs, and facilitate carrier injection and recombination of OLEDs. The nanostructures can also confine current flow and provide internal light guiding to enhance efficiency and thereby improve device performance. | 07-14-2011 |
20110168977 | SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE - An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints. | 07-14-2011 |
20110175054 | DEVICE CONTAINING LARGE-SIZED EMITTING COLLOIDAL NANOCRYSTALS - A device using a layer containing emitting semiconductor nanocrystals wherein each emitting nanocrystal includes a core structure wherein the cores have an aspect ratio less than 2:1 and a diameter greater than 10 nanometers and a protective shell surrounding the core | 07-21-2011 |
20110175055 | SOLID STATE LIGHTING DEVICE ON A CONDUCTIVE SUBSTRATE - A light emitting device includes a conductive substrate having a first substrate surface and comprising a conductive material, a protrusion formed on the conductive substrate, wherein the protrusion is defined in part by a first protrusion surface that is not parallel to the first substrate surface, and light emission layers disposed over the first protrusion surface. The light emission layers can emit light when an electric field is applied across the light emission layers. | 07-21-2011 |
20110175056 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device according to the embodiment includes a conductive support substrate including plural pairs of first and second conductive layers; alight emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers on the conductive support substrate; and an electrode on the light emitting structure layer. The first and second conductive layers are formed by using the same material. | 07-21-2011 |
20110175057 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm. | 07-21-2011 |
20110175058 | LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GaN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME - A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips. | 07-21-2011 |
20110180778 | GaN SERIES LIGHT-EMITTING DIODE STRUCTURE - The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere. | 07-28-2011 |
20110180779 | NANOSTRUCTURED THIN FILM, SURFACE LIGHT SOURCE AND DISPLAY APPARATUS EMPLOYING NANOSTRUCTURED THIN FILM - A nanostructured thin film used in a surface light source, including a dielectric layer, and nanostructures that are arranged periodically in the dielectric layer, wherein light emitted from the nanostructured thin film has directivity according to the nanostrucures. | 07-28-2011 |
20110180780 | PHOSPHOR, PHOSPHOR MANUFACTURING METHOD, AND WHITE LIGHT EMITTING DEVICE - Provided are a phosphor, a phosphor manufacturing method, and a white light emitting device. The phosphor is represented as a chemical formula of aMO-bAl | 07-28-2011 |
20110180781 | Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN - A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission. | 07-28-2011 |
20110180782 | Light-Emitting Devices - Various embodiments of the present invention are directed to semiconductor light-emitting devices that provide energy efficient, high-speed modulation rates in excess of 10 Gbits/sec. These devices include a light-emitting layer embedded between two relatively thicker semiconductor layers. The energy efficient, high-speed modulation rates result from the layers adjacent to the light-emitting layer being composed of semiconductor materials with electronic states that facilitate injection of carriers into the light-emitting layer for light emission when an appropriate light-emitting voltage is applied and facilitate the removal of carriers when an appropriate light-quenching voltage is applied. | 07-28-2011 |
20110186810 | OPTOELECTRONIC COMPONENT WITH THREE-DIMENSION QUANTUM WELL STRUCTURE AND METHOD FOR PRODUCING THE SAME - An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet. | 08-04-2011 |
20110186811 | OPTICAL COMPONENTS, SYSTEMS INCLUDING AN OPTICAL COMPONENT, AND DEVICES - A lighting system including a light source capable of generating light, and an optical component optically coupled to receive at least a portion of the light generated by the light source and convert at least a portion of the light so received to a predetermined wavelength such that the light emitted by the lighting system includes light emission from the light source supplemented with light emission at the predetermined wavelength, wherein the optical component including an optical material comprises quantum confined semiconductor nanoparticles. Also disclosed is an optical component comprising a light guide plate and an optical material disposed over at least a portion of a surface of the light guide plate, the optical material comprising quantum confined semiconductor nanoparticles capable of emitting light in a predetermined spectral region. Devices are also disclosed. | 08-04-2011 |
20110186812 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer. | 08-04-2011 |
20110186813 | Light Emitting Device - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer. | 08-04-2011 |
20110186814 | Light Emitting Device, Light Emitting Device Package - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and a light extraction pattern in which a period (a) exceeds λ/n (where, λ is a wavelength of light emitted from the active layer, and n is a refractive index of the light emitting structure) on the light emitting structure. The period (a) may be in the range of 5×(λ/n) (a (15×(λ/n). An etching depth (h) of the light extraction pattern may be equal to or greater than λ/n. | 08-04-2011 |
20110193056 | Vertical LED Chip Package on TSV Carrier - A method of forming a light-emitting device (LED) package component includes providing a substrate; forming an LED on the substrate; and lifting the LED off the substrate. A carrier wafer is provided, which includes a through-substrate via (TSV) configured to electrically connecting features on opposite sides of the carrier wafer. The LED is bonded onto the carrier wafer, with the LED electrically connected to the TSV. | 08-11-2011 |
20110193057 | LED Having Current Spreading Layer - An LED having a radiation-emitting active layer ( | 08-11-2011 |
20110193058 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer includes a stepped structure having a second top surface stepped lower than the first top surface thereof; an insulating layer disposed on a lateral surface of the light emitting structure and the second top surface of the first conductive type semiconductor layer; an electrode electrically connected with the first conductive type semiconductor layer; an electrode layer under the second conductive type semiconductor layer; and a protective layer disposed on a periphery portion of a lower surface of the second conductive type semiconductor layer. | 08-11-2011 |
20110193059 | III-Nitride Light Emitting Device Including Porous Semiconductor - A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire. | 08-11-2011 |
20110193060 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer. | 08-11-2011 |
20110193061 | Light Emitting Diode Device Having Uniform Current Distribution and Method for Forming the Same - Embodiments of the present disclosure relate to a novel semiconductor. In one aspect, the semiconductor may include a transparent layer having a first surface, a first doped layer, a second doped layer, and an active layer. The first doped layer may be formed over the first surface of the transparent layer and have a plurality of first-type electrodes formed thereon. The second doped layer may be formed over the first surface of the transparent layer and have a plurality of second-type electrodes formed thereon. The active layer may be formed between the first doped layer and the second doped layer. A distance between at least one of the first-type electrodes and a nearest other one of the first-type electrodes may be greater than each of respective distances between the at least one of the first-type electrodes and more than two of the second-type electrodes. | 08-11-2011 |
20110198560 | SUBSTRATE FOR EPITAXIAL GROWTH, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR FILM, GaN-BASED SEMICONDUCTOR FILM, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT - A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space. | 08-18-2011 |
20110198561 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 08-18-2011 |
20110198562 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device. In one embodiment, a light emitting device includes: a substrate including β-Ga203; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on the light emitting structure; and a porous layer at a lateral surface region of the substrate. | 08-18-2011 |
20110198563 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM HAVING THE SAME - A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; and a transparent electrode layer formed at least one of on and under the light emitting structure, wherein the transparent electrode layer has a thickness in a range of 30 nm to 70 nm to obtain a transmittance equal to or greater than 70% with respect to a wavelength range of light of 420 nm to 510 nm. | 08-18-2011 |
20110198564 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device. In one embodiment, the light emitting device includes: a first conductive type semiconductor layer including a plurality of grooves; an active layer formed on a upper surface of the first conductive type semiconductor layer and along the grooves; an anti-current leakage layer having a flat upper surface on the active layer; and a second conductive type semiconductor layer on the anti-current leakage layer. | 08-18-2011 |
20110198565 | LIGHT-EMITTING ELEMENT WITH IMPROVED LIGHT EXTRACTION EFFICIENCY, LIGHT-EMITTING DEVICE INCLUDING THE SAME, AND METHODS OF FABRICATING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE - Provided are a light-emitting element, a light-emitting device including the same, and methods of fabricating the light-emitting element and the light-emitting device. The light-emitting element includes a substrate on which a dome pattern is formed and a light-emitting structure conformally formed on the dome pattern. The light-emitting structure includes a first conductive layer of a first conductivity type, a light-emitting layer, and a second conductive layer of a second conductivity type sequentially stacked on the substrate. The light-emitting element also includes a first electrode formed on the first conductive layer and a second electrode formed on the second conductive layer. | 08-18-2011 |
20110198566 | METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT - A method for manufacturing a light emitting element is directed to a method for manufacturing a light emitting element of a III-V group compound semiconductor having a quantum well structure including In and N, including the steps of: forming a well layer including In and N; forming a barrier layer having a bandgap wider than a bandgap of the well layer; and supplying a gas including N and interrupting epitaxial growth after the step of forming the well layer and before the step of forming the barrier layer. In the step of interrupting epitaxial growth, the gas having decomposition efficiency higher than decomposition efficiency of decomposition from N | 08-18-2011 |
20110198567 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING METHOD - The semiconductor light-emitting device ( | 08-18-2011 |
20110198568 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCTION THEREOF - A light-emitting apparatus of the present invention includes: a mounting base | 08-18-2011 |
20110204322 | Optoelectronic Semiconductor Body and Method for Producing an Optoelectronic Semiconductor Body - An optoelectronic semiconductor body is provided which has an epitaxial semiconductor layer sequence based on nitride compound semiconductors. The semiconductor layer sequence comprises a buffer layer, which is nominally undoped or at least partially n-conductively doped, an active zone, which is suitable for emitting or receiving electromagnetic radiation, and a contact layer, which is n-conductively doped, arranged between the buffer layer and the active zone. The n-dopant concentration is greater in the contact layer than in the buffer layer. The semiconductor layer sequence contains a recess, which extends through the buffer layer and in which an electrical contact material is arranged and adjoins the contact layer. A method is additionally indicated which is suitable for producing such a semiconductor body. | 08-25-2011 |
20110204323 | SOURCE OF PHOTONS RESULTING FROM A RECOMBINATION OF LOCALIZED EXCITONS - A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from λ0/10*n | 08-25-2011 |
20110204324 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - The light emitting device includes a substrate, a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light-transmitting electrode layer. The second conductive type semiconductor layer has a thickness satisfying Equation: 2·Φ1+Φ2=N·2π±Δ, (0≦Δ≦π/2), where Φ1 is a phase change that is generated when light of a vertical direction passes through the second conductive type semiconductor layer, Φ2 is a phase change that is generated when the light is reflected by the light-transmitting electrode layer, and N is a natural number. | 08-25-2011 |
20110204325 | LIGHT-EMITTING DEVICE, LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME - Provided are a light-emitting element and a light-emitting device, and methods of fabricating the same. The method of fabricating a light-emitting element includes forming a buffer layer on a substrate and forming photonic crystal patterns and a pad pattern on the buffer layer. Each of the pad pattern and the photonic crystal patterns are made of a metal material, and the pad pattern is physically connected to the photonic crystal patterns. Forming a light-emitting structure includes sequentially stacking a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type on the buffer layer. And the method also includes forming a first electrode that is electrically connected to the first conductive pattern and forming a second electrode that is electrically connected to the second conductive pattern. | 08-25-2011 |
20110204326 | LIGHT EMITTING DIODE HAVING MODULATION DOPED LAYER - A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced. | 08-25-2011 |
20110204327 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF - Semiconductor surface emitting elements having a plurality of wavelengths being manufactured on a signal substrate through MOVPE selective growth. More specifically, provided is a semiconductor light emitting element array which comprises; a semiconductor crystal substrate; an insulating film disposed on a surface of the substrate, the insulating film being divided into two or more regions, each of which having two or more openings exposing the surface of the substrate; semiconductor rods extending from the surface of the substrate upward through the openings, the semiconductor rods each having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction; a first electrode connected to the semiconductor crystal substrate; and a second electrode connected to upper portions of the semiconductor rods; wherein the heights of the semiconductor rods as measured from the substrate surface vary by each of the two or more regions. | 08-25-2011 |
20110210310 | Semiconductor light-emitting element - A semiconductor light-emitting element includes a semiconductor laminated body including a first conductivity type layer, a light-emitting layer and a second conductivity type layer in this order, a transparent electrode formed on the first conductivity type layer and comprising an oxide, and an auxiliary electrode formed between the first conductivity type layer and the transparent electrode, the auxiliary electrode having a higher reflectivity to light emitted from the light-emitting layer, a larger contact resistance with the first conductivity type layer and a smaller sheet resistance than the transparent electrode. | 09-01-2011 |
20110210311 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material. | 09-01-2011 |
20110210312 | III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device includes a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface includes a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Widths of upper portions of the recesses are larger than widths of lower portions of the recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses. | 09-01-2011 |
20110215290 | ANTI-REFLECTED HIGH EFFICIENCY LIGHT EMITTING DIODE DEVICE - The present invention is related to a light emitting diode device in which a fine prominence and depression is formed on a semiconductor layer to make an anti-reflection region. The light emitting diode device comprises, a substrate; a N-type semi-conductor layer; an active layer for generating light; P-type semiconductor layer; a first exposed region formed by etching the active layer and the P-type semiconductor layer to partly expose the N-type semiconductor layer; a first ohmic contact formed on the first exposed layer; a second ohmic contact formed on the P-type semiconductor layer, and having an opening to partly form a second exposed region on the P-type semiconductor layer, said second exposed layer being formed to partly have a ultra-fine prominence and depression. | 09-08-2011 |
20110215291 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device using an ITON layer for a transparent conductor and realizing low drive voltage, high luminance efficiency, and uniformed light emission intensity distribution is provided. The semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and whose uppermost part is a p-type GaN layer; an ITON (Indium Tin Oxynitride) layer formed on the p-type GaN layer; an ITO (Indium Tin Oxide) layer formed on the ITON layer; a first metal electrode formed on a part on the ITO layer; and a second metal electrode formed in contact with the n-type semiconductor layer. | 09-08-2011 |
20110215292 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 09-08-2011 |
20110215293 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film. | 09-08-2011 |
20110215294 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a semiconductor light emitting device, including a light emission portion including a first semiconductor layer with a first conductive type, a light emission layer on the first semiconductor layer, a second semiconductor layer with a second conductive type on the light emission layer and a transparent electrode on the second semiconductor layer, and a plurality of light outlet holes inside the light emission portion, the plurality of light outlet holes communicating with the first semiconductor layer from a surface side of the transparent electrode, at least a part of light emitted from the light emission layer being extracted from the plurality of the outlet holes to outside. | 09-08-2011 |
20110215295 | METHOD OF PRODUCING A RADIATION-EMITTING THIN FILM COMPONENT AND RADIATION-EMITTING THIN FILM COMPONENT - A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods. | 09-08-2011 |
20110215296 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING SAME, AND LIGHT-EMITTING DEVICE - A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element | 09-08-2011 |
20110220866 | SOLID STATE LIGHTING DEVICES GROWN ON SEMI-POLAR FACETS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (“GaN”) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (“InGaN”)/GaN multi quantum well (“MQW”) active region directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN/GaN MQW, and P-type GaN materials is grown a semi-polar sidewall. | 09-15-2011 |
20110220867 | SUPERLATTICE FREE ULTRAVIOLET EMITTER - A light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The template has a micro-undulated buffer layer with Al | 09-15-2011 |
20110220868 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Discussed are a nitride semiconductor light emitting device in which a critical angle is increased by rounding corners of a substrate so as to improve light extraction efficiency due to increase in an amount of light generated from the inside thereof and extracted to the outside, and a method for manufacturing the same. The nitride semiconductor light emitting device includes according to an embodiment a buffer layer formed on a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, formed on the buffer layer, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer, wherein the substrate has a light transmitting property, and respective corners of the substrate are rounded so as to have a designated curvature. | 09-15-2011 |
20110220869 | QUANTUM DOT ORGANIC LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A quantum dot organic light emitting device and a method of manufacturing the same are disclosed. A first electrode layer is formed on a substrate. A block copolymer film which can cause phase separation on the first electrode layer is formed. The block copolymer film is phase-separated into a plurality of first domains, each having a nano size column shape, and a second domain which surrounds the first domains. A quantum dot template film of the second domain, which comprises a plurality of nano size through holes, is formed by selectively removing the first domains. Quantum dot structures, each of which comprises an organic light emitting layer in the through hole of the quantum dot template film, is formed. | 09-15-2011 |
20110220870 | MANUFACTURE OF QUANTUM DOT-ENABLED SOLID-STATE LIGHT EMITTERS - Light emitting devices comprise excitation sources arranged to excite quantum dots which fluoresce to emit light. In an embodiment, a device is manufactured by a process which involves applying an acoustic field is applied to a fluid containing quantum dots, to cause the quantum dots to accumulate at locations which are adjacent to excitation sources, and then initiating a phase transition of the fluid to trap the quantum dots in the locations adjacent to the excitation sources. The quantum dots are illuminated during the process and the resulting fluorescence is optically monitored to provide indicators of quantum dot distribution in the fluid. These indicators are used as feedback for controlling aspects of the process, such as initiating the phase transition. | 09-15-2011 |
20110220871 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE - In a nitride semiconductor light-emitting device, a nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer are successively stacked on an n-type nitride semiconductor layer. In a semiconductor light-emitting device, a first lower layer, a second lower layer, an active layer, and an upper layer having a thickness not greater than 40 nm are successively stacked on a substrate, and an interface of a second electrode for n-type in contact with the upper layer includes a metal of which a surface plasmon can be excited by light generated from the active layer. | 09-15-2011 |
20110220872 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In | 09-15-2011 |
20110220873 | LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE - A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate. | 09-15-2011 |
20110227033 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER - According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Al | 09-22-2011 |
20110227034 | QUANTUM DOT-BLOCK COPOLYMER HYBRID, METHODS OF FABRICATING AND DISPERSING THE SAME, LIGHT EMITTING DEVICE INCLUDING THE SAME, AND FABRICATION METHOD THEREOF - Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot. | 09-22-2011 |
20110227035 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - Provided is a nitride-based semiconductor light-emitting element having improved carrier injection efficiency into the well layer. The element comprises a substrate ( | 09-22-2011 |
20110227036 | High Efficiency Hybrid Light-Emitting Diode - A hybrid LED comprising an anode, an organic hole-transport layer for transporting holes injected into the diode from said anode, a light-emitting quantum dot layer, an electron-transport layer, and a cathode for injecting electrons into said transport layer, wherein the LED also comprises, between said hole- and electron-transport layers, at least one assembly formed by a phosphorescent light-emitting layer presenting an emission spectrum that covers at least part of an absorption spectrum of said quantum dots, and by a buffer layer separating said phosphorescent layer from said quantum dot layer, the material of said or each buffer layer presenting a forbidden band greater than that of a phosphorescent element of said phosphorescent layer so as to prevent excitons diffusing towards said quantum dot layer. | 09-22-2011 |
20110227037 | ENHANCEMENT OF LED LIGHT EXTRACTION WITH IN-SITU SURFACE ROUGHENING - The embodiments of the present invention generally relates to methods for enhancing the light extraction by surface roughening of the bottom n-GaN layer and/or top p-GaN layer so that the internal light from the active region is scattered outwardly to result in a higher external quantum efficiency. In one embodiment, a surface roughening process is performed on the n-GaN layer to form etching pits in a top surface of the n-GaN layer. Once the etching pits are formed, growth of the n-GaN material may be resumed on the roughened n-GaN layer to partially fill the etching pits, thereby forming air voids at the interface of the n-GaN layer and the subsequent, re-growth n-GaN layer. These air voids provide one or more localized regions with indices of reflection different from that of the n-GaN layer, such that the internal light generated by the active layers (e.g., the InGaN MQW layer), when passing through the n-GaN layer, is scattered by voids or bubbles. The surface roughening process may be further performed on a top surface of a p-GaN layer to scatter the light emitted from the active layers outwardly rather than being reflected back to the active layers. | 09-22-2011 |
20110227038 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND A PRODUCTION METHOD THEREOF - A semiconductor light emitting device comprising a semiconductor layer of (Al | 09-22-2011 |
20110227039 | NITRIDE-BASED LIGHT EMITTING DEVICE - A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer. | 09-22-2011 |
20110233514 | Surface plasmon enhanced light-emitting diode - A surface plasmon enhanced light-emitting diode includes, from bottom to top, a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a plurality of metal filler elements. The p-type semiconductor layer includes upper and lower surfaces, and the upper surface is recessed downward to form a plurality of spaced apart recesses for receiving the metal filler elements, respectively. | 09-29-2011 |
20110233515 | Light Emitting Device, Light Emitting Device Package And Lighting System - Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, which are formed on the substrate such that a part of the first conductive semiconductor layer is exposed; a dielectric layer formed from a top surface of the second conductive semiconductor layer to an exposed top surface of the first conductive semiconductor layer; a second electrode on the second conductive semiconductor layer; and a first electrode on the exposed top surface of the first conductive semiconductor layer while making contact with a part of the dielectric layer on the second conductive semiconductor layer. | 09-29-2011 |
20110233516 | OPTICAL SEMICONDUCTOR DEVICE INCLUDING PROTRUSION STRUCTURE OF PARALLELOGRAM CELLS AND ITS MANUFACTURING METHOD - In an optical semiconductor device including a support body, semiconductor layers made of (Al | 09-29-2011 |
20110233517 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device according to the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a superlattice structure layer on the second conductive semiconductor layer, and a third conductive semiconductor layer on the superlattice structure layer; a light transmission electrode layer on the light emitting structure; a first electrode connected to the first conductive semiconductor layer; a second electrode electrically connected to the light transmission electrode layer on the light emitting structure; and an insulating layer extending from a lower portion of the second electrode to an upper portion of the second conductive semiconductor layer. | 09-29-2011 |
20110233518 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor layer; an active layer on the second semiconductor layer, the active layer including a multi-quantum well structure having a plurality of quantum barrier layers and a plurality of quantum well layers; a third semiconductor layer including a second type dopant on the active layer; and a fourth semiconductor layer including the second type dopant on the third semiconductor layer. The first semiconductor layer has a composition equation of Al | 09-29-2011 |
20110240955 | LED Semiconductor Body and Use of an LED Semiconductor Body - An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body. | 10-06-2011 |
20110240956 | Group III nitride semiconductor light-emitting device - The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%. | 10-06-2011 |
20110240957 | Group lll nitride semiconductor light-emitting device - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance without increasing driving voltage. The Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In | 10-06-2011 |
20110240958 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - A light emitting device according to the embodiment includes a conductive support substrate; a second conductive semiconductor layer on the conductive support substrate; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer, the first conductive semiconductor layer including a GaN layer, an InGaN layer, and a roughness formed with selectively removed the GaN and InGaN layers; and an electrode layer on the first conductive semiconductor layer. | 10-06-2011 |
20110240959 | NANOSTRUCTURED DEVICE - A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction. | 10-06-2011 |
20110240960 | QUANTUM DOT-WAVELENGTH CONVERTER, MANUFACTURING METHOD OF THE SAME AND LIGHT EMITTING DEVICE INCLUDING THE SAME - There is provided a quantum dot wavelength converter including a quantum dot, which is optically stable without any change in an emission wavelength and improved in emission capability. The quantum dot wavelength converter includes: a wavelength converting part including a quantum dot wavelength-converting excitation light and generating a wavelength-converted light and a dispersive medium dispersing the quantum dot; and a sealer sealing the wavelength converting part. | 10-06-2011 |
20110240961 | LIGHT-EMITTING DEVICES FOR LIQUID CRYSTAL DISPLAYS - Light emitting devices, and related components, processes, systems and methods are disclosed. | 10-06-2011 |
20110248237 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer, a conductive layer, a bonding layer, a support member, first and second pads, and first and second electrodes. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The conductive layer is disposed under the light emitting structure layer. The bonding layer is disposed under the conductive layer. The support member is disposed under the bonding layer. The first pad is disposed under the support member. The second pad is disposed under the support member at a distance from the first pad. The first electrode is connected between the first conductive type semiconductor layer and the first pad. The second electrode is connected between the bonding layer and the second pad. | 10-13-2011 |
20110248238 | LIGHT EMITTING DEVICE, AND LIGHTING APPARATUS - Disclosed herein is a light emitting device. The light emitting device includes a support member and a light emitting structure on the support member and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers, and the active layer includes at least one quantum well layer and at least one barrier layer, at least one potential barrier layer located between the first conductive semiconductor layer and a first quantum well layer, closest to the first conductive semiconductor layer, out of the at least one quantum well layer, and an undoped barrier layer formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer. Thereby, brightness of the light emitting device is improved through effective diffusion of current. | 10-13-2011 |
20110248239 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively. | 10-13-2011 |
20110248240 | GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE - The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In | 10-13-2011 |
20110253972 | LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM - A method for fabricating a semiconductor light-emitting device based on a strain adjustable multilayer semiconductor film is disclosed. The method includes epitaxially growing a multilayer semiconductor film on a growth substrate, wherein the multilayer semiconductor film comprises a first doped semiconductor layer, a second doped semiconductor layer, and a multi-quantum-wells (MQW) active layer; forming an ohmic-contact metal layer on the first doped semiconductor layer; depositing a metal substrate on top of the ohmic-contact metal layer, wherein the density and/or material composition of the metal substrate is adjustable along the vertical direction, thereby causing the strain in the multilayer semiconductor film to be adjustable; etching off the growth substrate; and forming an ohmic-electrode coupled to the second doped semiconductor layer. | 10-20-2011 |
20110253973 | Semiconductor layer - A light-emitting element includes a β-Ga | 10-20-2011 |
20110253974 | NITRIDE SEMICONDUCTOR - To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 mm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness. | 10-20-2011 |
20110253975 | Semiconductor Material Doping - A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s). | 10-20-2011 |
20110253976 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-20-2011 |
20110253977 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-20-2011 |
20110253978 | LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1−x)N and a range of x is given by 010-20-2011 | |
20110253979 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency. | 10-20-2011 |
20110266518 | Light Emitting Device, Light Emitting Device Package, and Lighting System - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a non-periodic light extraction pattern, and a phosphor layer. The light emitting structure includes a first conductive type semiconductor layer, a second conductive type semiconductor layer over the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The non-periodic light extraction pattern is disposed over the light emitting structure. The phosphor layer is disposed over the non-periodic light extraction pattern. The phosphor layer fills at least one portion of the non-periodic light extraction pattern. | 11-03-2011 |
20110266519 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate, the light emitting structure exposing a portion of the first conductive type semiconductor layer upward, a light transmissive electrode having a stepped portion on the second conductive type semiconductor layer, a second electrode on the light transmissive electrode, and a first electrode on the exposed first conductive type semiconductor layer. | 11-03-2011 |
20110266520 | Superlattice Structure - A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation. | 11-03-2011 |
20110272666 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode comprises a light-emitting diode chip having a first semiconductor layer, a first electrode, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer and a second electrode formed on the second semiconductor layer. The first semiconductor layer, the active layer, the second semiconductor layer and the second electrode sequentially compose a stacked multilayer. A blind hole penetrates the second electrode, the second semiconductor layer, the active layer and inside the first semiconductor layer. The first electrode is disposed on the first semiconductor layer inside the blind hole. A first supporting layer and a second supporting layer are respectively disposed on the first electrode and the second electrode, wherein the first supporting layer and the second supporting layer are separated from each other. A method for manufacturing the light-emitting diode is also provided in the disclosure. | 11-10-2011 |
20110272667 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a first cladding layer made of a first conductivity type group III nitride semiconductor; an active layer formed on the first cladding layer; a quantum well electron barrier layer which is formed on the active layer, and includes electron trapping barrier layers made of Al | 11-10-2011 |
20110272668 | NANOPARTICLES - The present application provides a light-emissive nitride nanoparticle, for example a nanocrystal, having a photoluminescence quantum yield of at least 1%. This quantum yield is significantly greater than for prior nitride nanoparticles, which have been only weakly emissive and have had poor control over the size of the nanoparticles produced. The nanoparticle includes at least one capping agent provided on a surface of the nitride crystal and containing an electron-accepting group for passivating nitrogen atoms at the surface of the crystal. The invention also provides non-emissive nitride nanoparticles. | 11-10-2011 |
20110272669 | PLASMONIC LIGHT EMITTING DIODE - A light emitting diode ( | 11-10-2011 |
20110272670 | NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer. | 11-10-2011 |
20110278536 | LIGHT EMITTING MATERIAL - A film can include a plurality of semiconductor nanocrystals and a J-aggregating material in solution. The film can exhibit 90% energy transfer efficiency from the J-aggregating material to the plurality of semiconductor nanocrystals. The film can exhibit photoluminescence that is enhanced at least 2.5 times over an equivalent film including the plurality of semiconductor nanocrystals alone when excited at 465 nm. The film can be contacted onto a substrate by spin casting. | 11-17-2011 |
20110278537 | SEMICONDUCTOR EPITAXIAL STRUCTURES AND SEMICONDUCTOR OPTOELECTRONIC DEVICES COMPRISING THE SAME - A semiconductor epitaxial structure includes a substrate; a semiconductor epitaxial stack layers formed on the substrate; and a plurality of semiconductor buffer layers deposited between the substrate and the semiconductor epitaxial layer with a gradually varied composition along one direction; wherein more than one of the semiconductor buffer layers have a patterned surface. | 11-17-2011 |
20110278538 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions. | 11-17-2011 |
20110284821 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer. | 11-24-2011 |
20110284822 | LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME - An exemplary embodiment of the present invention discloses an LED chip including a substrate, a GaN-based compound semiconductor stacked structure arranged on the substrate, an electrode electrically connected to the semiconductor stacked structure, and a wavelength converting layer covering a portion of the semiconductor stacked structure. The electrode passes through the wavelength converting layer. The semiconductor stacked structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. | 11-24-2011 |
20110284823 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device, including a reflective electrode layer; a second conductive semiconductor layer formed on a portion of a top surface of the reflective electrode layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; a first electrode formed under one portion of the first conductive semiconductor layer; and an insulating layer having a lower portion, a first upwardly directed side wall portion at a first side of the first electrode and a second upwardly directed side wall portion at a second side of the first electrode that is opposite to the first side. At least one portion of the lower portion is between the second conductive semiconductor layer and the reflective electrode layer. | 11-24-2011 |
20110284824 | LIGHT EMITTING DIODE STRUCTURE AND A METHOD OF FORMING A LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure comprises a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer comprising the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice. | 11-24-2011 |
20110291069 | Light-emitting devices and methods of manufacturing the same - Light-emitting devices (LED) and methods of manufacturing the same. A LED includes a first type semiconductor layer, a nano array layer that includes a plurality of nano structures each including a first type semiconductor nano core selectively grown from the first type semiconductor layer, and an active layer and a second type semiconductor layer sequentially grown from a side surface of the first type semiconductor nano core, and that is formed in a selective growth region formed in a surface of the first type semiconductor layer, a first electrode layer that is formed to be used when a voltage is applied to the first type semiconductor layer and formed in a predetermined pattern connecting regions that do not correspond to the selective growth region in the first type semiconductor layer, a second electrode layer formed to be used when a voltage is applied to the second type semiconductor layer on the plurality of nano structures, and an insulating layer formed between the first electrode layer and the second electrode layer so that the first electrode layer is insulated from the second electrode layer. | 12-01-2011 |
20110291070 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern. | 12-01-2011 |
20110291071 | QUANTUM DOT LIGHT EMITTING DIODE DEVICE AND DISPLAY DEVICE THEREWITH - The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith. | 12-01-2011 |
20110291072 | SEMICONDUCTOR DIES, LIGHT-EMITTING DEVICES, METHODS OF MANUFACTURING AND METHODS OF GENERATING MULTI-WAVELENGTH LIGHT - A semiconductor die includes at least one first region and at least one second region. The at least one first region is configured to emit light having at least a first wavelength. The at least one second region is configured to emit light having at least a second wavelength, which is different from the first wavelength. | 12-01-2011 |
20110291073 | QUANTUM DOT PHOSPHOR FOR LIGHT EMITTING DIODE AND METHOD OF PREPARING THE SAME - Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured. | 12-01-2011 |
20110297914 | GALLIUM NITRIDE-BASED FLIP-CHIP LIGHT-EMITTING DIODE WITH DOUBLE REFLECTIVE LAYERS ON ITS SIDE AND FABRICATION METHOD THEREOF - The present invention discloses a double-reflective-layer gallium nitride-based flip-chip light-emitting diode with both a distributed Bragg reflector and a metal reflective layer on its side and a fabrication method thereof. The light-emitting diode includes: a sapphire substrate; a buffer layer, an N-GaN layer, a multiple-quantum-well layer and a P-GaN layer stacked on the sapphire substrate in that order; a transparent conductive layer formed on the P-GaN layer; a distributed Bragg reflector formed over a side of the epitaxial layer and the transparent conductive layer; a metal reflective layer formed on the DBR; a P-type ohmic contact electrode formed on the transparent conductive layer; and an N-type ohmic contact electrode formed on the exposed N-GaN layer, wherein the P-type ohmic contact electrode and the N-type ohmic contact electrode are bonded to a heat dissipation substrate through a metal conductive layer and a ball bonder. By arranging a double reflection structure including a DBR and a metal reflective layer on the sloping side of the LED chip, the good reflectivity of the reflective layers can be fully utilized, thereby improving the light-emission efficiency of the LED. | 12-08-2011 |
20110303891 | Mixed Alloy Defect Redirection Region and Devices Including Same - An optical semiconductor device such as a light emitting diode is formed on a transparent substrate having formed thereon a template layer, such as AlN, which is transparent to the wavelength of emission of the optical device. A mixed alloy defect redirection region is provided over the template layer such that the composition of the defect redirection region approaches or matches the composition of the regions contiguous thereto. For example, the Al content of the defect redirection region may be tailored to provide a stepped or gradual Aluminum content from template to active layer. Strain-induced cracking and defect density are reduced or eliminated. | 12-15-2011 |
20110303892 | LIGHT-EMITTING DEVICE AND PROJECTOR - A light-emitting device includes a first layer, a second layer, and a semiconductor body interposed between the first and second layers, wherein the semiconductor body has a first fine-wall-shape member, a second fine-wall-shape member, and a semiconductor member interposed between the first and second fine-wall-shape members, the first and second fine-wall-shape members have a third layer, a fourth layer, and a fifth layer interposed between the third and fourth layers, the fifth layer is a layer that generates light and guides the light, the third and fourth layers are layers that guide the light generated in the fifth layer, and the first and second layers are layers that suppress leakage of the light generated in the fifth layer. | 12-15-2011 |
20110303893 | Electrically Pixelated Luminescent Device Incorporating Optical Elements - Electrically pixelated luminescent devices incorporating optical elements, methods for forming electrically pixelated luminescent devices incorporating optical elements, and systems including electrically pixelated luminescent devices incorporating optical elements. | 12-15-2011 |
20110303894 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND FABRICATING METHOD - A method of forming a semiconductor light emitting element. The method can include forming a seed layer on a semiconductor layer assembly including at least one nitride semiconductor layer. An insulating mask can be formed on the seed layer. The insulating mask can include a plurality of element areas separated by cross spaces. Each element area of the plurality of element areas can be connected to at least one of the other element areas of the plurality of element areas. The seed layer can be plated such that a plating substrate is formed in each of the plurality of element areas. | 12-15-2011 |
20110303895 | VERTICAL LIGHT-EMITTING DIODE - A vertical light-emitting diode with a short circuit protection function includes a heat dissipation substrate, a second electrode, a welding metal layer and a third electrode; a semiconductor light-emitting layer formed on the third electrode; a barrier for the semiconductor light-emitting layer with an isolation trench, so that the barrier for the semiconductor light-emitting layer surrounds the semiconductor light-emitting layer on a central region of the third electrode, with the isolation trench therebetween. The barrier for the semiconductor light-emitting layer has a structure the same as the semiconductor light-emitting layer, and the isolation trench exposes the third electrode. A fourth electrode is formed on the semiconductor light-emitting layer. The barrier prevents the metal particles in chip dicing and the conductive adhesive in packaging from reaching the semiconductor light-emitting layer, thereby providing short circuit protection and improving the reliability of the vertical light-emitting diode. | 12-15-2011 |
20110303896 | BROADBAND LIGHT EMITTING DEVICE LAMPS FOR PROVIDING WHITE LIGHT OUTPUT - A light emitting device (LED) includes a broadband LED chip having a multi-quantum well active region including alternating active and barrier layers. The active layers respectively include different thicknesses and/or different relative concentrations of at least two elements of a semiconductor compound, and are respectively configured to emit light of different emission wavelengths that define an asymmetric spectral distribution over a wavelength range within a visible spectrum. Related devices are also discussed. | 12-15-2011 |
20110309324 | SOLID STATE DEVICES WITH SEMI-POLAR FACETS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices with semi-polar or non-polar surfaces and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and an epitaxial silicon structure in direct contact with the substrate surface. The epitaxial silicon structure has a sidewall extending away from the substrate surface. The solid state lighting device also includes a semiconductor material on at least a portion of the sidewall of the epitaxial silicon structure. The semiconductor material has a semiconductor surface that is spaced apart from the substrate surface and is located on a semi-polar or non-polar crystal plane of the semiconductor material. | 12-22-2011 |
20110309325 | LIGHT SOURCE MODULE USING QUANTUM DOTS, BACKLIGHT UNIT EMPLOYING THE LIGHT SOURCE MODULE, DISPLAY APPARATUS, AND ILLUMINATION APPARATUS - A light source module using quantum dots, a backlight unit employing the light source module, a display apparatus, and an illumination apparatus. The light source module includes a light emitting device package including a plurality of light emitting device chips, and a quantum dot sealing package disposed on the light emitting device package in a light emitting direction, and converts wavelengths of light emitted from the light emitting device chips to generate wavelength-converted light. | 12-22-2011 |
20110309326 | DEEP ULTRAVIOLET LIGHT EMITTING DIODE - A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure. The diode can include a composite contact, including an adhesion layer, which is at least partially transparent to light generated by the light generating structure and a reflecting metal layer configured to reflect at least a portion of the light generated by the light generating structure. | 12-22-2011 |
20110309327 | LIGHT EMITTING DEVICE, METHOD FOR FABRICATING LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - A light emitting device is provided. The light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and comprising a plurality of well layers and a plurality of barrier layers, a first nitride semiconductor layer disposed between the first conductivity type semiconductor layer and the active layer, and a second nitride semiconductor layer disposed between the active layer and the second conductivity type semiconductor layer, wherein the first nitride semiconductor layer has a higher indium composition than that of at least one of the plurality of well layers. | 12-22-2011 |
20110309328 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, EPITAXIAL SUBSTRATE, AND METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device | 12-22-2011 |
20110315952 | LIGHT-EMITTING DEVICES WITH IMPROVED ACTIVE-REGION - A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided. | 12-29-2011 |
20110315953 | METHOD OF FORMING COMPOUND SEMICONDUCTOR - A method of forming a semiconductor is provided and includes patterning a pad and a nanowire onto a wafer, the nanowire being substantially perpendicular with a pad sidewall and substantially parallel with a wafer surface and epitaxially growing on an outer surface of the nanowire a secondary layer of semiconductor material, which is lattice mismatched with respect to a material of the nanowire and substantially free of defects. | 12-29-2011 |
20110315954 | SEMICONDUCTOR NANOCRYSTAL, METHOD OF MANUFACTURE THEREOF AND ARTICLES INCLUDING THE SAME - A semiconductor nanocrystal including a core including ZnSe, ZnTe, ZnS, ZnO, or a combination comprising at least one of the foregoing, wherein the core has a diameter of about 2 nanometers to about 5 nanometers and an emitted light wavelength of about 405 nanometers to about 530 nanometers; and a first layer disposed on the core, the first layer including a Group III-V semiconductor, wherein the semiconductor nanocrystal has a full width at half maximum of an emitted light wavelength of less than or equal to about 60 nanometers. | 12-29-2011 |
20110315955 | LIGHT-EMITTING DIODE AND LIGHT-EMITTING DIODE LAMP - A light-emitting diode includes a transparent substrate and a compound semiconductor layer that includes a light-emitting unit and is bonded to the transparent substrate. The light-emitting unit includes a light-emitting layer represented by a composition formula (Al | 12-29-2011 |
20110315956 | Electronic Devices with Yielding Substrates - In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts. | 12-29-2011 |
20110315957 | LIGHT EMITTING DEVICE - There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer. | 12-29-2011 |
20120001151 | Semiconductor light emitting device and wafer - A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing Al | 01-05-2012 |
20120001152 | SEMICONDUCTOR LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion. | 01-05-2012 |
20120007039 | CRYSTAL GROWTH METHOD AND SEMICONDUCTOR DEVICE - A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum). | 01-12-2012 |
20120007040 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers. | 01-12-2012 |
20120007041 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes: a second conductive semiconductor layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; and a second electrode layer including a reflective layer under the second conductive semiconductor layer. The active layer includes a second active layer that actually emits light on the reflective layer and a first active layer that does not emit light on the second active layer. A distance between the reflective layer and the second active layer satisfies a constructive interference condition. | 01-12-2012 |
20120007042 | LIGHT EMITTING DEVICE WITH A SINGLE QUANTUM WELL ROD - A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well layer comprising a plurality of quantum well rods which are separated from each other, and each of the quantum well rods has only one quantum well. | 01-12-2012 |
20120007043 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device includes an n-type silicon thin film ( | 01-12-2012 |
20120007044 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell. | 01-12-2012 |
20120012812 | SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures. | 01-19-2012 |
20120012813 | OPTICAL DEVICE TO EMIT POLARIZED LIGHT - An optical device capable of emitting polarized light includes a light emitting means, two multi-layer optical films disposed above and below the light emitting means and two metal layers. The two metal layers cover the two multi-layer optical layers from the upper and lower sides respectively. Each of the two multi-layer optical films includes at least two films made from materials of different refractive indexes that are stacked in a staggered manner. The optical film formed by the multi-layer optical films and metal layers provides greater reflectance to S-polarized light (TE) and higher absorption to P-polarized light. Light generated by the light emitting means emits diagonally to the optical films and is reflected several times thereof to form S-polarized light (TE) to emit sideward. | 01-19-2012 |
20120012814 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. | 01-19-2012 |
20120012815 | LIGHT EMITTING DEVICE - Disclosed herein is a light emitting device including a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer including at least one combination of a well layer of a first composition formed of a nitride-semiconductor material having first electronic energy and a barrier layer of a second composition formed of a nitride-semiconductor material having higher electronic energy than the first electronic energy, and an interface layer disposed between the second conductivity-type semiconductor layer and the active layer or between the first conductivity-type semiconductor layer and the active layer. The interface layer includes first, second and third layers having different energy bandgaps, the energy bandgaps of the first and second layers are greater than the energy bandgap of the barrier layer, and the energy bandgap of the third layer is less than the energy bandgap of the barrier layer. | 01-19-2012 |
20120018699 | METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE - A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO | 01-26-2012 |
20120018700 | Light Emitting Diode Having Vertical Topology And Method Of Making The Same - An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate. | 01-26-2012 |
20120018701 | Group III Nitride Based Quantum Well Light Emitting Device Structures with an Indium Containing Capping Structure - Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum. | 01-26-2012 |
20120032137 | SOLID STATE LIGHTING DEVICES WITH DIELECTRIC INSULATION AND METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure. | 02-09-2012 |
20120032138 | LIGHT-EMITTING DEVICE HAVING ENHANCED LUMINESCENCE BY USING SURFACE PLASMON RESONANCE AND METHOD OF FABRICATING THE SAME - A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode. | 02-09-2012 |
20120032139 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode. | 02-09-2012 |
20120032140 | LIGHT-EMITTING DIODE INCLUDING A METAL-DIELECTRIC-METAL STRUCTURE - A light-emitting diode (LED) ( | 02-09-2012 |
20120032141 | Compositions Comprising QD Sol-Gel Composites and Methods for Producing and Using the Same - The present invention provides OLEDs comprising cross-linked quantum dots and methods for producing and using the same. | 02-09-2012 |
20120032142 | NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER - A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements. | 02-09-2012 |
20120032143 | EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region. | 02-09-2012 |
20120032144 | Nitride semiconductor light-emitting device and method of manufacturing the same - A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index. | 02-09-2012 |
20120037881 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. | 02-16-2012 |
20120037882 | PHOSPHOR, PHOSPHOR MANUFACTURING METHOD, AND WHITE LIGHT EMITTING DEVICE - Provided are a phosphor, a phosphor manufacturing method, and a white light emitting device. The phosphor is represented as a chemical formula of aMO-bAlN-cSi | 02-16-2012 |
20120037883 | SEMICONDUCTOR LIGHT-EMITTING DEVICES FOR GENERATING ARBITRARY COLOR - A light-emitting device includes a conductive substrate ( | 02-16-2012 |
20120037884 | THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-BLOCKING LAYER FREE GALLIUM NITRIDE-BASED LIGHT EMITTING DIODES - A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer. | 02-16-2012 |
20120037885 | NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER - A light source has an active layer ( | 02-16-2012 |
20120037886 | LIGHT-EMITTING DIODE DEVICE - A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero. | 02-16-2012 |
20120043522 | High-reflectivity and low-defect density LED structure - The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials which are alternately stacked and have different refractive indexes. An N-type semiconductor layer, an activation layer and a light emitting layer which is a P-type semiconductor layer are sequentially formed on the sapphire substrate. An N-type electrode and a P-type electrode are respectively coated on the N-type semiconductor layer and the P-type semiconductor layer. The dielectric layer can lower the defect density of the light emitting layer during the epitaxial growth process. Further, the dielectric layer can function as a high-reflectivity area to reflect light generated by the light emitting layer and the light is projected downward to be emitted from the top or the lateral. Thereby is greatly increased the light-extraction efficiency. | 02-23-2012 |
20120043523 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode. | 02-23-2012 |
20120043524 | LIGHT-EMITTING DIODE - An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer. | 02-23-2012 |
20120043525 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit light. The light emission layer has a light emission surface which is not parallel to the first surface. | 02-23-2012 |
20120043526 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME - Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer. | 02-23-2012 |
20120056152 | LIGHT EMITTING DEVICES - In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a rod structure formed on the epi layer. The rod structure includes a plurality of rods distanced from each other. | 03-08-2012 |
20120056153 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer. | 03-08-2012 |
20120056154 | METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate. | 03-08-2012 |
20120056155 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers. | 03-08-2012 |
20120056156 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer. The first conductivity type layer has a superlattice structure. First semiconductor layers and second semiconductor layers are alternately provided in the superlattice structure. The first semiconductor layers include a first nitride semiconductor and the second semiconductor layers include a second nitride semiconductor having a larger lattice constant than the first nitride semiconductor. The light emitting layer has a multi-quantum well structure. Quantum well layers and barrier layers are alternately provided in the multi-quantum well structure. The quantum well layers include a third nitride semiconductor having a smaller lattice constant than the second nitride semiconductor and the barrier layers include a fourth nitride semiconductor having a smaller lattice constant than the third nitride semiconductor. At least one of the quantum well layers has lattice spacing equal to the lattice constant of the third nitride semiconductor. | 03-08-2012 |
20120056157 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 03-08-2012 |
20120056158 | LIGHT EMITTING DIODES WITH A P-TYPE SURFACE BONDED TO A TRANSPARENT SUBMOUNT TO INCREASE LIGHT EXTRACTION EFFICIENCY - An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane. | 03-08-2012 |
20120061640 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×10 | 03-15-2012 |
20120061641 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof. | 03-15-2012 |
20120061642 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting device which includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The semiconductor light emitting device comprises a first transparent electrode made of metal oxide transparent conductor provided on a surface of the p-type semiconductor layer; a second transparent electrode made of a metal oxide transparent conductor provided on the surface of the p-type semiconductor layer and electrically connected to the first transparent electrode; and a p-side electrode pad made of metal provided on a surface of the second transparent electrode. The second transparent electrode is higher in contact resistance with the p-type semiconductor layer than the first transparent electrode. | 03-15-2012 |
20120061643 | GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND THE METHOD FOR MAKING THE SAME - A GaN-based semiconductor light emitting device | 03-15-2012 |
20120061644 | Blue Light Emitting Semiconductor Nanocrystal Materials - A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency. | 03-15-2012 |
20120061645 | OPTOELECTRONIC DEVICE BASED ON NON-POLAR AND SEMI-POLAR ALUMINUM INDIUM NITRIDE AND ALUMINUM INDIUM GALLIUM NITRIDE ALLOYS - A high-power and high-efficiency light emitting device with emission wavelength (λ | 03-15-2012 |
20120061646 | LIGHT EMISSION DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a light emission device and a manufacturing method thereof. The light emission device includes: i) a substrate; ii) a mask layer disposed on the substrate and having at least one opening; iii) a light emission structure formed on the mask layer surrounding the opening and extended substantially perpendicular to a surface of the substrate; iv) a first electrode formed on the mask layer while surface-contacting the external surface of the light emission structure; and v) a second electrode disposed in the light emission structure and surface-contacting the internal surface of the light emission structure. | 03-15-2012 |
20120068153 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer. | 03-22-2012 |
20120068154 | GRAPHENE QUANTUM DOT LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufacturing a graphene quantum dot light emitting device includes: forming a first graphene doped with a first dopant; forming a graphene quantum dot layer including a plurality of graphene quantum dots on the first graphene; and forming a second graphene doped with a second dopant on the graphene quantum dot layer. | 03-22-2012 |
20120068155 | III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE - In a semiconductor device | 03-22-2012 |
20120074379 | LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF - A light-emitting element includes: a substrate being a monocrystalline structure, comprising a plurality of recesses; and a plurality of first light-emitting stacks formed in the recesses respectively. | 03-29-2012 |
20120074380 | WHITE LIGHT EMITTING DIODE - A white light emitting diode (LED) and method for forming the white LED are provided, wherein a semiconductor material is formed directly with a epitaxial method on a GaN epitaxial structure. The semiconductor material is a doped II-VI semiconductor compound with a broad FWHM (Full Width at Half Maximum) compared to conventional phosphor, can provide a white LED with better color rendering. | 03-29-2012 |
20120074381 | RE-EMITTING SEMICONDUCTOR CONSTRUCTION WITH ENHANCED EXTRACTION EFFICIENCY - A stack of semiconductor layers ( | 03-29-2012 |
20120074382 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURE OF THE SAME - Disclosed is a light emitting device. The light emitting device includes a substrate, a semiconductor layer on the substrate, and an electrode on the semiconductor layer, wherein the substrate has at least one side surface having a predetermined tilt angle with respect to a bottom surface of the substrate, wherein the predetermined tilt angle is an obtuse angle, and wherein a side surface of the semiconductor layer disposes vertically. | 03-29-2012 |
20120074383 | DEVICE OF LIGHT-EMITTING DIODE - A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate. | 03-29-2012 |
20120074384 | PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES - Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed. | 03-29-2012 |
20120080659 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting layer with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer and the gallium nitride based semiconductor layer. | 04-05-2012 |
20120080660 | LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion. | 04-05-2012 |
20120085987 | LIGHT EMITTING DEVICE - A light emitting device is provided, which includes a light-emitting structure having an active layer and a magnetic material. The active layer includes at least one quantum well structure, and a thickness of at least one of the quantum well structure is greater than or substantially equal to 1.2 nm at room temperature. The magnetic material is coupled with the light-emitting structure to produce a magnetic field perpendicular to a surface of the active layer in the light-emitting structure. | 04-12-2012 |
20120085988 | LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) device includes a substrate, an epitaxial layer, a first electrode and a second electrode. The epitaxial layer is disposed on the substrate. The first electrode is disposed to the epitaxial layer and the second electrode is disposed on the epitaxial layer, and a first conductive finger of the second electrode and a first conductive finger of the first electrode are overlapped. Because the first conductive finger of the second electrode and the first conductive finger of the first electrode are overlapped, the light-emitting area of the LED device can be increased and the light shielded by the electrodes can be decreased significantly. Besides, overlapped electrodes can form a capacitor which can store electric charges to enhance the antistatic ability of the LED device. | 04-12-2012 |
20120085989 | LIGHT-EMITTING SEMICONDUCTOR DEVICE - A semiconductor light-emitting device includes a conductive substrate, a light-emitting structure layer, a metallic reflective layer, a transparent conductive layer, a first patterned dielectric layer, and a second patterned dielectric layer. The light-emitting structure layer, the transparent conductive layer, the metallic reflective layer, and the conductive substrate are sequentially arranged. The first patterned dielectric layer is between the light-emitting structure layer and the transparent conductive layer and includes first structure units separated from one another by a first space. The first portions are located in the first spaces respectively. The second patterned dielectric layer is between the transparent conductive layer and the metallic reflective layer and includes second structure units separated from one another by a second space. The second portions are located in the second spaces respectively. The first and the second portions are not overlapped. | 04-12-2012 |
20120091433 | LIGHT EMITTING DIODE AND METHOD FOR MAKING SAME - A light emitting diode includes a substrate, a number of light emitting units formed on the substrate, and an insulating layer. Each light emitting unit includes a first electrode layer, a number of light emitting nanowires and a second electrode layer. Each light emitting nanowire includes a zinc-oxide-nanowire buffering segment extending from the first electrode layer, an N-type gallium nitride nanowire segment and a P-type gallium nitride nanowire segment. The N-type gallium nitride nanowire segment is interconnected between the zinc-oxide-nanowire buffering segment and the P-type gallium nitride nanowire segment. The P-type gallium nitride nanowire segment has a distal portion embedded in the second electrode layer. The insulating layer is formed on the substrate and the first electrode layer. The light emitting nanowires is embedded in the insulating layer and insulated from each other. | 04-19-2012 |
20120091434 | VERTICAL LIGHT-EMITTING DEVICE - A vertical light-emitting device includes: a substrate; a first electrode disposed on a bottom surface of the substrate; a reflection layer disposed on a top surface of the substrate; a current spreading layer disposed on the reflection layer and comprising a groove having a width narrower toward a top portion thereof; a light generation layer disposed on the current spreading layer; and a second electrode disposed on the light generation layer. | 04-19-2012 |
20120097918 | IMPLANTED CURRENT CONFINEMENT STRUCTURE TO IMPROVE CURRENT SPREADING - Ion implantation is used to form a current confinement structure, such as that in a light emitting diode. This current confinement structure defines multiple cells in one embodiment, each of which may surround an undoped region. The ion implantation may be performed between formation of the various layers. In one embodiment, the formation of one layer is interrupted and then resumed after ion implantation is performed. | 04-26-2012 |
20120097919 | LIMITING STRAIN RELAXATION IN III-NITRIDE HETERO-STRUCTURES BY SUBSTRATE AND EPITAXIAL LAYER PATTERNING - A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension/along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer. | 04-26-2012 |
20120097920 | III-NITRIDE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME - This invention relates to structures and fabricating methods of light-emitting diodes capable of emitting white or a color within full-visible-spectrum with better efficiency and flexibility. An embodiment provides a light-emitting diode array consisted of one or more light-emitting diodes on a substrate. Each light-emitting diode comprises a first doped nanorod, an active light-emitting region consisted of one or more nanodisks on the first doped nanorod, and a second doped nanorod on the active light-emitting region. Another embodiment provides a fabricating method of the light-emitting diode array. | 04-26-2012 |
20120097921 | Cadmium-free Re-Emitting Semiconductor Construction - Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy. | 04-26-2012 |
20120097922 | LIGHT EMITTING ELEMENT, METHOD OF PRODUCING SAME, LAMP, ELECTRONIC EQUIPMENT, AND MECHINICAL APPARATUS - There is provided a light-emitting element in which the driving voltage is reduced and light extraction efficiency is improved, a method of manufacturing the light-emitting element, a lamp, electronic equipment, and a mechanical apparatus. This is achieved by using a light-emitting element ( | 04-26-2012 |
20120104355 | THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS - In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed. | 05-03-2012 |
20120104356 | LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and barrier layers. An outermost barrier layer of the barrier layers includes a plurality of first layers; and a plurality of second layers. | 05-03-2012 |
20120104357 | LIGHT EMITTING DEVICE - A light emitting device includes a stacked body including at least a light emitting layer made of In | 05-03-2012 |
20120112158 | EPITAXIAL SUBSTRATE, SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUCH EPITAXIAL SUBSTRATE AND FABRICATION THEREOF - The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is formed of oxide of a material different from that forms the crystalline substrate. | 05-10-2012 |
20120112159 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - A nitride semiconductor light emitting element includes: an n type nitride semiconductor layer formed on a substrate; a light emitting layer formed on the n type nitride semiconductor layer; and a p type nitride semiconductor layer formed on the light emitting layer. The n type nitride semiconductor layer is constituted by one layer or two or more stacked layers. At least one layer constituting the n type nitride semiconductor layer contains Si and Sn as n type dopants and contains In as an isoelectronic dopant. | 05-10-2012 |
20120112160 | SOLID STATE LIGHT EMITTING DEVICE AND METHOD FOR MAKING THE SAME - A method for making a solid state light emitting device includes: (a) forming a first cladding layer on a substrate; (b) forming a matrix layer above the first cladding layer, the matrix layer having a top surface and being formed with a plurality of isolated spaces; (c) epitaxially forming a quantum cluster in each of the spaces such that the top surface of the matrix layer and top surfaces of the quantum clusters cooperatively define a coplanar surface, the quantum clusters cooperating with the matrix layer to form a light emitting layer; (d) forming a second cladding layer on the light emitting layer; and (e) forming an electrode unit electrically connected to the first and second cladding layers. | 05-10-2012 |
20120112161 | LIGHT EMITTING DEVICE WITH TRENCHES AND A TOP CONTACT - A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer. | 05-10-2012 |
20120112162 | NITRIDE BASED LIGHT EMITTING DEVICE - A nitride based light emitting device is disclosed. More particularly, a nitride based light emitting device capable of improving light emitting efficiency and reliability thereof is disclosed. The nitride based light emitting device includes a first conductive semiconductor layer connected to a first electrode, a second conductive semiconductor layer connected to a second electrode, an active layer located between the first conductive semiconductor layer and the second conductive semiconductor layer and having a quantum well structure, a first insertion layer located in at least one of a boundary between the first conductive semiconductor layer and the active layer and a boundary between the second conductive semiconductor layer and the active layer, and a second insertion layer located adjacent to the first insertion. | 05-10-2012 |
20120112163 | LIGHT-EMITTING DIODE DEVICE STRUCTURE WITH SixNy LAYER - A light-emitting diode (LED) structure fabricated with a Si | 05-10-2012 |
20120119184 | Vertical Light Emitting Diode (VLED) Die Having N-Type Confinement Structure With Etch Stop Layer And Method Of Fabrication - A vertical light emitting diode (VLED) die includes a p-type confinement layer, an active layer on the p-type confinement layer configured to emit light, and an n-type confinement structure having at least one etch stop layer configured to protect the active layer. A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a carrier substrate; forming an n-type confinement structure on the carrier substrate having at least one etch stop layer; forming an active layer on the n-type confinement structure; forming a p-type confinement layer on the active layer; and removing the carrier substrate. | 05-17-2012 |
20120119185 | ACTIVE LAYER FOR SILICON LIGHT-EMITTING DEVICES AND METHOD FOR MANUFACTURING THE SAME - An active layer for silicon light-emitting devices has a layered film structure of first and second layers alternately stacked on a substrate. The first layer contains a silicon compound, and the second layer contains another silicon compound and has a larger band gap than the first layer. The layered film structure contains silicon nanoparticles. The first layer contains more silicon atoms than the second layer, and at least one of the silicon nanoparticles exists across at least one of the interfacial boundaries between the first layer and the second layer. | 05-17-2012 |
20120119186 | LIGHT EMITTING DEVICE - A light emitting device may include a light emitting structure that includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the active layer includes a light emitting layer adjacent to the second semiconductor layer and that includes a well layer and a barrier layer and a super-lattice layer between the light emitting layer and the first semiconductor layer, the super-lattice layer including at least six pairs of a first layer and a second layer, wherein a composition of the first layer includes indium (In) and the second layer includes indium (In), and the composition of the first layer is different from the composition of the second layer. | 05-17-2012 |
20120119187 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer. | 05-17-2012 |
20120119188 | SEMICONDUCTOR APPARATUS MANUFACTURING METHOD AND SEMICONDUCTOR APPARATUS - A semiconductor apparatus manufacturing method is a method of manufacturing a semiconductor apparatus having a peak wavelength of PL emission of greater than or equal to 1.2 μm at a temperature of 300K. The manufacturing method is provided with: a first forming process of forming a buffer layer ( | 05-17-2012 |
20120126201 | GALLIUM NITRIDE LED DEVICES WITH PITTED LAYERS AND METHODS FOR MAKING THEREOF - Light-emitting diode device and method for making thereof. The device includes an n-type layer including a first surface and associated with a first thickness, and a pitted layer on the first surface. The pitted layer includes a second surface and associated with a second thickness ranging from 500 Å to 3000 Å. Additionally, the device includes an active layer on the second surface, the active layer being associated with a third thickness ranging from 10 Å to 20 Å, and a p-type layer on the active layer. The n-type layer is associated with a defect density at the first surface, and the defect density ranges from 1×10 | 05-24-2012 |
20120126202 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device of the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and a active layer including a quantum well and a quantum bather between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the energy band gap of the quantum well is gradually changed into parabolic toward a center of the quantum well. | 05-24-2012 |
20120126203 | High Power LED Device Architecture Employing Dielectric Coatings and Method of Manufacture - An improved LED device is disclosed and includes at least one active layer in communication with an energy source and configured to emit a first electromagnetic signal within a first wavelength range and at least a second electromagnetic signal within at least a second wavelength range, a substrate configured to support the active layer, at least one coating layer applied to a surface of the substrate, the coating layer, configured for 0-90 degree incidence, to reflect at least 95% of the first electromagnetic signal at the first wavelength range and transmit at least 95% of the second electromagnetic signal at the second wavelength range, at least one metal layer applied to the coating layer and configured to transmit the second electromagnetic signal at the second wavelength range therethrough, and an encapsulation device positioned to encapsulate the active layer. | 05-24-2012 |
20120132887 | Nitride semiconductor light emitting device - A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between Al | 05-31-2012 |
20120132888 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods. | 05-31-2012 |
20120132889 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME - A high luminance semiconductor light emitting device and fabrication method thereof, wherein a metallic reflecting layer is formed using a non-transparent semiconductor substrate. The device includes a light emitting diode structure on a GaAs substrate structure bonded together using a first and a third metal layers. The substrate includes a GaAs layer, a first metal buffer layer on a surface of the GaAs layer, the first metal layer on the first metal buffer layer, and a second metal buffer layer and a second metal layer at a back side of the GaAs layer. The diode structure includes the third metal layer, a metal contact layer on the third metal layer, a p-type cladding layer on the metal contact layer, a multi-quantum well layer on the p-type cladding layer, an n-type cladding layer on the multi-quantum well layer, and a window layer on the n-type cladding layer. | 05-31-2012 |
20120132890 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased. | 05-31-2012 |
20120138889 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration. | 06-07-2012 |
20120138890 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer. | 06-07-2012 |
20120138891 | METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al,In,Ga)N/Al(x)In(1-x)N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES - A method for reduction of efficiency droop using an (Al, In, Ga)N/Al | 06-07-2012 |
20120138892 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a substrate, and a light-emitting structure formed on the substrate. The light-emitting structure comprises a first active layer emitting the light with a first wavelength, and a second active layer emitting the light with a second wavelength. The light-emitting structure is formed by the first active layer and the second active layer stacked alternately. | 06-07-2012 |
20120138893 | LIGHT EMITTING DIODE, LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME AND LIGHTING SYSTEM - A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a multi-contact layer disposed on at least a predetermined region of the second conductive type semiconductor layer, the multi-contact layer including at least one pair-structure configured of a first layer including InGaN having a dopant doped thereon and a second layer including GaN having a different dopant doped thereon; and a first electrode and a second electrode to provide currents to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively. | 06-07-2012 |
20120138894 | STABLE AND ALL SOLUTION PROCESSABLE QUANTUM DOT LIGHT-EMITTING DIODES - Embodiments of the invention are directed to quantum dot light emitting diodes (QD-LEDs) where the electron injection and transport layer comprises inorganic nanoparticles (I-NPs). The use of I-NPs results in an improved QD-LED over those having a conventional organic based electron injection and transport layer and does not require chemical reaction to form the inorganic layer. In one embodiment of the invention the hole injection and transport layer can be metal oxide nanoparticles (MO-NPs) which allows the entire device to have the stability of an all inorganic system and permit formation of the QD-LED by a series of relatively inexpensive steps involving deposition of suspensions of nanoparticles and removing the suspending vehicle. | 06-07-2012 |
20120138895 | SEMICONDUCTOR DEVICE - A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. | 06-07-2012 |
20120138896 | SEMICONDUCTOR DEVICE - A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. | 06-07-2012 |
20120145990 | NANOWIRE GROWTH ON DISSIMILAR MATERIAL - The present invention relates to growth of III-V semiconductor nanowires ( | 06-14-2012 |
20120145991 | HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON TILT SUBSTRATE AND FABRICATION METHOD THEREOF - Provided are a high-quality non-polar/semi-polar semiconductor device and a manufacturing method thereof. A template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor device and improve the internal quantum efficiency and light extraction efficiency thereof. In the method for manufacturing the semiconductor device, a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The crystal plane of the sapphire substrate is tilted in a predetermined direction, and the template layer includes a nitride semiconductor layer and a GaN layer on the tilted sapphire substrate. | 06-14-2012 |
20120145992 | LIGHT-EMITTING DIODE HAVING AN INTERLAYER WITH HIGH VOLTAGE DENSITY AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are gallium nitride based light emitting diodes having interlayers with high dislocation density and a method of fabricating the same. The light emitting diode includes: a substrate; a buffer layer disposed on the substrate; an n-type contact layer disposed on the buffer; a p-type contact layer disposed on the n-type contact layer; an active layer interposed between the n-type contact layer and the p-type contact layer; a first lower semiconductor layer interposed between the buffer layer and the n-type contact layer; and a first interlayer interposed between the first lower semiconductor layer and the n-type contact layer, wherein the first interlayer has lower dislocation density than the buffer layer and higher dislocation density than the first lower semiconductor layer. This way, the interlayers with higher dislocation density prevent dislocations formed within the first lower semiconductor layer from being transferred to the n-type contact layer. | 06-14-2012 |
20120145993 | LIGHT EMITTING DEVICE - A light emitting device is disclosed. In the light emitting device, the structure of a barrier layer of an active layer is changed, and a band gap energy of an intermediate layer is varied, thereby improving hole injection efficiency of the active layer and thus light emission efficiency. | 06-14-2012 |
20120145994 | STABLE HIGH POWER ULTRAVIOLET LIGHT EMITTING DIODE - An improved process for forming a UV emitting diode is described. The process includes providing a substrate. A super-lattice is formed directly on the substrate at a temperature of at least 800 to no more than 1,300° C. wherein the super-lattice comprises Al | 06-14-2012 |
20120153252 | Nano-Structured Light-Emitting Devices - A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type semiconductor nanocore on a portion of the first type semiconductor layer; a current spreading layer formed to cover a surface of the first type semiconductor nanocore and formed of an Al | 06-21-2012 |
20120153253 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part. | 06-21-2012 |
20120153254 | Inverted Light Emitting Diode Having Plasmonically Enhanced Emission - An LED device having plasmonically enhanced emission is provided. The device includes an inverted LED structure with a coating of metal nanoparticles on the surface chosen to match the plasmonic response to the peak emission from the active quantum well (QW) emission region of the LED. The active QW emission region is separated from the metal nanoparticles on the surface by a thin n-type contact layer disposed on a top side of the active QW emission. A p-type layer is disposed immediately beneath the active QW emission region and injects holes into the active QW emission region. The n-type contact layer is sufficiently thin to permit a coupling of the surface plasmons (SPs) from the metal nanoparticles and the excitons in the active QW emission region. The SP-exciton coupling provides an alternative decay route for the excitons and thus enhances the photon emission from the LED device. | 06-21-2012 |
20120153255 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed is a light emitting device, including: a substrate, a light emitting structure provided on the substrate, which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer laminated in sequential order, a transmissive electrode layer arranged on the light emitting structure, an electrode provided on the light emitting structure. Here, the electrode includes a pad electrode and a finger electrode, and an insertion element is placed between the finger electrode and the second conductive semiconductor layer, wherein the insertion element is formed such that at least one region thereof overlaps with the finger electrode in a vertical direction. Since the insertion element is formed under the finger electrode, it is possible to prevent light emitted by the active layer from being absorbed by the finger electrode. Accordingly, luminous efficacy of the light emitting device may be further enhanced. | 06-21-2012 |
20120153256 | LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and a plurality of barrier layers. The bather layers comprise a first barrier layer having a first band gap which is the nearest to the second conductive type semiconductor layer, a second barrier layer adjacent to the first barrier, and a third barrier layer between the second bather layer and the first conductive type semiconductor layer. The well layers comprise a first well layer having a third band gap different from the first band gap between the first and second bather layers, and a second well layer between the second barrier layer and the third barrier layer, the second well layer having a second band gap. The first well layer has a thickness thinner than that of the second well layer. | 06-21-2012 |
20120153257 | HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON AN UNEVENLY PATTERNED SUBSTRATE AND A PRODUCTION METHOD THEREFOR - Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed. | 06-21-2012 |
20120153258 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element includes an n-GaN layer | 06-21-2012 |
20120153259 | LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE - A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure. | 06-21-2012 |
20120161099 | NITIRDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor LED device including an N-type doped layer, an active layer and a P-type doped layer is provided. The active layer is disposed on the N-type doped layer and includes at least one quantum well structure. The quantum well structure includes two quantum barrier layers and a quantum well sandwiched between the quantum barrier layers. The quantum barrier layer is a super-lattice structure including a quaternary nitride semiconductor. The P-type doped layer is disposed on the active layer. | 06-28-2012 |
20120161100 | LIGHT EMITTING DIODE AND MAKING METHOD THEREOF - An LED includes a substrate, an N-type GaN layer, an insulation layer, an N-type GaN nano-wire layer, a quantum well layer and a P-type GaN nano-wire layer. The N-type GaN layer and the insulation layer are arranged on the substrate in turn. At least one groove is formed on a top surface of the insulation layer, therefore, part of the N-type GaN layer is exposed. The N-type GaN nano-wire layer is formed on the groove of the insulation layer, and part of the N-type GaN nano-wire layer is protruded from the insulation layer. The quantum well layer and the P-type GaN nano-wire layer are coated on the part of the N-type GaN nano-wire layer which is protruded from the insulation layer. The present invention also relates to a method for making an LED. | 06-28-2012 |
20120161101 | WATER STABLE III-V SEMICONDUCTOR NANOCRYSTAL COMPLEXES AND METHODS OF MAKING SAME - A water-stable semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The water-stable semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material and a water-stabilizing layer. A method of making a water-stable semiconductor nanocrystal complex is also provided. | 06-28-2012 |
20120161102 | LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and barrier layers. The barrier layers comprise a first barrier layer which is the nearest to a second conductive type semiconductor layer and has a first band gap, a second barrier layer having a third band gap, and a third barrier layer having the first band gap between the second barrier layer and a first conductive type semiconductor layer. The well layers comprise a first well layer having a second band gap between the first and the second barrier layers, and a second well layer between the second barrier layer and the third barrier layer. The second barrier layer is disposed between the first and the second well layers, and the third band gap is narrower than the first band gap and wider than the second band gap. | 06-28-2012 |
20120161103 | ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP - An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm. | 06-28-2012 |
20120161104 | ULTRAVIOLET IRRADIATION DEVICE - An ultraviolet irradiation device having a simple structure without using a pn junction, which can efficiently utilize a surface plasmon polariton and can emit ultraviolet light of a specific wavelength at a high efficiency. The device has at least one semiconductor multilayer film element and an electron beam irradiation source which are provided in a container having an ultraviolet-ray transmitting window and is vacuum-sealed, wherein the film element has an active layer formed of In | 06-28-2012 |
20120168714 | VERTICAL LIGHT EMITTING DIODE (VLED) DIE AND METHOD OF FABRICATION - A vertical light emitting diode (VLED) die includes a first metal having a first surface and an opposing second surface; a second metal on the second surface of the first metal; a p-type semiconductor layer on the first surface of the first metal; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. | 07-05-2012 |
20120168715 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode. | 07-05-2012 |
20120168716 | Light Emitting Diode (LED) Die Having Stepped Substrates And Method Of Fabrication - A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. | 07-05-2012 |
20120168717 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS - Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (Al | 07-05-2012 |
20120168718 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device including: a substrate; an n-type semiconductor layer giving an electron when receiving voltage; a p-type semiconductor layer giving a hole when receiving voltage; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer and including a quantum well structure to facilitate coupling between an electron and a hole; an n-type electrode including conductivity for applying voltage to the n-type semiconductor layer; a p-type electrode including conductivity for applying voltage to the p-type semiconductor layer; and am electric-current diffusion and hole injection layer provided between the p-type semiconductor layer and the p-type electrode and doped with n-type impurities and p-type impurities for diffusing an electric current and injecting a hole between the p-type electrode and the p-type semiconductor layer. With this, ohmic contact is decreased, flow of an electric current is improved, diffusion of the electric current is more uniformized, and injection of a hole is improved between the electrode and the semiconductor layer of the semiconductor light emitting device, thereby maximizing efficiency of a device. | 07-05-2012 |
20120175586 | SILICON-GERMANIUM, QUANTUM-WELL, LIGHT-EMITTING DIODE - A silicon-germanium, quantum-well, light-emitting diode ( | 07-12-2012 |
20120175587 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is herein disclosed. The semiconductor light emitting device includes: a conductive substrate, a p-type semiconductor layer disposed on the conductive substrate, an active layer disposed on the p-type semiconductor layer, an n-type semiconductor layer disposed on the active layer, and an n-side electrode disposed on the n-type semiconductor layer and including a carbon nanotube layer doped with an n-type impurity. | 07-12-2012 |
20120175588 | SEMICONDUCTOR NANOCRYSTALS USED WITH LED SOURCES - The present invention relates to the use of light-converting, colloidal, doped semiconductor nanocrystals to provide a new generation of high performance, low cost monochromatic and white light sources based on LEDs. | 07-12-2012 |
20120175589 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A nitride semiconductor device is provided, in which a superlattice strain buffer layer using AlGaN layers having a low Al content or GaN layers is formed with good flatness, and a nitride semiconductor layer with good flatness and crystallinity is formed on the superlattice strain buffer layer. A nitride semiconductor device includes a substrate; an AlN strain buffer layer made of AlN formed on the substrate; a superlattice strain buffer layer formed on the AlN strain buffer layer; and a nitride semiconductor layer formed on the superlattice strain buffer layer, and is characterized in that the superlattice strain buffer layer has a superlattice structure formed by alternately stacking first layers made of Al | 07-12-2012 |
20120175590 | LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT EMITTING DEVICE - A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method. | 07-12-2012 |
20120175591 | LIGHT EMITTING DEVICE - A light emitting device including a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a reflective layer under the substrate and including a light reflection pattern configured to reflect light emitted by the active layer in directions away from the reflective layer. | 07-12-2012 |
20120175592 | LIGHT-EMITTING DEVICE - A light-emitting device is disclosed. The light-emitting device comprises an epitaxial structure comprising a lower cladding layer of first conductivity type, an active layer comprising InGaN or AlGaInN on the lower cladding layer, and an upper cladding layer of second conductivity type on the active layer; a tunneling structure on the epitaxial structure comprising a first tunneling layer of second conductivity type with a doping concentration greater than 6×10 | 07-12-2012 |
20120175593 | Nanograin Material and Photoelectric Conversion Device - A quantum dot, which is an ultrafine grain, has a core-shell structure having a core portion and a shell portion protecting the core portion. The surface of the shell portion is covered with two kinds of surfactants, a hole-transporting surfactant and an electron-transporting surfactant, which are concurrently present. Moreover, the hole-transporting surfactant has a HOMO level which tunneling-resonates with the valence band of the quantum dot and the electron-transporting surfactant has a LUMO level which tunneling-resonates with the transfer band of the quantum dot. Thus, a nanograin material which has good carrier transport efficiency and is suitable for use in a photoelectric conversion device is achieved. | 07-12-2012 |
20120181503 | Method of Fabricating Silicon Quantum Dot Layer and Device Manufactured Using the Same - Disclosed are a method of fabricating a silicon quantum dot layer and a device manufactured using the same. A first capping layer is formed on a substrate, and a silicon-containing precursor layer is formed on the first capping layer. A second capping layer is formed on the silicon-containing precursor layer. The first capping layer, the silicon-containing precursor layer, and the second capping layer are irradiated to convert the silicon-containing precursor layer into a stack including a first poly-crystalline silicon layer, a silicon quantum dot layer on the first poly-crystalline silicon layer, and a second poly-crystalline silicon layer on the silicon quantum dot layer. | 07-19-2012 |
20120181504 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion. | 07-19-2012 |
20120187366 | GROWTH METHOD OF NITRIDE SEMICONDUCTOR LAYER AND LIGHT EMITTING DEVICE USING THE GROWTH METHOD - Growing a first nitride semiconductor layer on an Al | 07-26-2012 |
20120187367 | OPTICAL MATERIALS, OPTICAL COMPONENTS, AND METHODS - An optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state. Further disclosed is an optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state, and wherein the optical material is at least partially encapsulated. Methods, optical materials, and devices are also disclosed. | 07-26-2012 |
20120187368 | High Sensitivity Stress Sensor Based on Hybrid Materials - A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging. | 07-26-2012 |
20120187369 | LIGHT EMITTING DEVICE - Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a substrate, a first semiconductor layer containing indium (In) over the substrate, and a light emitting structure over the first semiconductor layer. A dislocation mode is disposed on a top surface of the first semiconductor layer. | 07-26-2012 |
20120187370 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer, wherein the first conductive semiconductor layer comprises a first layer provided at the upper surface thereof with a notch, a second layer disposed on the first layer and a third layer disposed on the second layer, wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the notch. The light emitting device can reduce leakage current by dislocation and improve resistance to static electricity. | 07-26-2012 |
20120187371 | White Light Devices Using Non-polar or Semipolar Gallium Containing Materials and Phosphors - A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength. | 07-26-2012 |
20120187372 | CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm in some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured. | 07-26-2012 |
20120193605 | POWDERED QUANTUM DOTS - Powdered quantum dots that can be dispersed into a silicone layer are provided. The powdered quantum dots are a plurality of quantum dot particles, preferably on the micron or nanometer scale. The powdered quantum dots can include quantum dot-dielectric particle complexes or quantum dot-crosslinked silane complexes. The powdered quantum dots can included quantum dot particles coated with a dielectric layer. | 08-02-2012 |
20120193606 | Nanocrystals Including III-V Semiconductors - Semiconductor nanocrystals including III-V semiconductors can include a core including III-V alloy. The nanocrystal can include an overcoating including a II-VI semiconductor. | 08-02-2012 |
20120193607 | LIGHT SOURCE - Wherein the light source comprising: a monolithic emissive semiconductor device; and an array of lenslets, the lenslets being optically and mechanically coupled to the monolithic emissive semiconductor device; wherein the monolithic emissive semiconductor device comprises an array of localized light emission regions, each region corresponding to a given lenslet; wherein the lenslets have an apparent center of curvature (C | 08-02-2012 |
20120199810 | GROWTH SUBSTRATE AND LIGHT EMITTING DEVICE - Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing portions of the silicon substrate, a second buffer layer covering the first buffer layer and the exposed portions of the silicon substrate, wherein the second buffer layer is formed of a material causing a eutectic reaction with the silicon substrate, a third buffer layer disposed on the second buffer layer, and a light emitting structure disposed on the third buffer layer, and the second buffer layer includes voids. | 08-09-2012 |
20120199811 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film. | 08-09-2012 |
20120199812 | STRAIN TUNABLE SILICON AND GERMANIUM NANOWIRE OPTOELECTRONIC DEVICES - Silicon, silicon-germanium alloy, and germanium nanowire optoelectronic devices and methods for fabricating the same are provided. According to one embodiment, a P-I-N device is provided that includes a parallel array of intrinsic silicon, silicon-germanium or germanium nanowires located between a p+ contact and an n+ contact. In certain embodiments, the intrinsic silicon and germanium nanowires can be fabricated with diameters of less than 4.9 nm and 19 nm, respectively. In a further embodiment, vertically stacked silicon, silicon-germanium and germanium nanowires can be formed. | 08-09-2012 |
20120205616 | DEFECT-CONTROLLING STRUCTURE FOR EPITAXIAL GROWTH, LIGHT EMITTING DEVICE CONTAINING DEFECT-CONTROLLING STRUCTURE, AND METHOD OF FORMING THE SAME - A method for reducing dislocations or other defects in a light emitting device, such as light emitting diode (LED), by in-situ introducing nanoparticles into at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. | 08-16-2012 |
20120205617 | NON-POLAR SEMICONDUCTOR LIGHT EMISSION DEVICES - A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN. | 08-16-2012 |
20120205618 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance and high electrostatic breakdown voltage. The Group III nitride semiconductor light-emitting device has a layered structure in which an n-type contact layer, an ESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer are deposited on a sapphire substrate. The ESD layer has a pit. The n-type cladding layer and the light-emitting layer are formed without burying the pit. The pit has a diameter of 110 nm to 150 nm at an interface between the n-type cladding layer and the light-emitting layer. The barrier layer of the light-emitting layer is formed of AlGaN having an Al composition ratio of 3% to 7%. | 08-16-2012 |
20120205619 | Light Emitting Device with Dislocation Bending Structure - A solution for reducing a number of dislocations in an active region of an emitting device is provided. A dislocation bending structure can be included in the emitting device between the substrate and the active region. The dislocation bending structure can be configured to cause dislocations to bend and/or annihilate prior to reaching the active region, e.g., due to the presence of a sufficient amount of strain. The dislocation bending structure can include a plurality of layers with adjacent layers being composed of a material, but with molar fractions of an element in the respective material differing between the two layers. The dislocation bending structure can include at least forty pairs of adjacent layers having molar fractions of an element differing by at least five percent between the adjacent layers. | 08-16-2012 |
20120205620 | METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES - A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed. | 08-16-2012 |
20120205621 | LIGHT EMITTING DIODE COMPRISING SEMICONDUCTOR NANOCRYSTAL COMPLEXES - A light emitting diode (LED) formed by depositing an LED chip and coupling a stability layer to the LED chip. Semiconductor nanocrystals are placed in a first matrix material to form a nanocrystal complex layer. The nanocrystal complex layer is deposited on top of the stability layer. A thickness of the stability layer is chosen to maximizes a power of a light output by the nanocrystal complex layer. The matrix material and the stability layer can be of the same type of material. Additional layers of matrix material can be deposited on top of the nanocrystal complex layer. These additional layers can comprise matrix material only or can comprise matrix material and semiconductor nanocrystals to form another nanocrystal complex layer. | 08-16-2012 |
20120205622 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a plurality of first conductive type semiconductor layers; a plurality of second conductive type semiconductor layers; an active layer between the first and second conductive type semiconductor layers, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers; a first electrode connected to the first conductive type semiconductor layers; and a second electrode connected to the second conductive type semiconductor layers, wherein the first conductive type semiconductor layers includes a first and second AlGaN based layers, and the plurality of quantum well layers of the active layer include an InAlGaN layer. | 08-16-2012 |
20120205623 | NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES - A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 | 08-16-2012 |
20120211724 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting layer includes at least one quantum well, and the quantum well adjacent to the p-type semiconductor layer includes a first barrier layer and a second barrier layer, the first barrier layer nearer to the p-type semiconductor layer being doped with p-type impurity. | 08-23-2012 |
20120211725 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure | 08-23-2012 |
20120217469 | Light emitting semiconductor device - A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode. | 08-30-2012 |
20120217470 | NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT CRYSTALLINITY AND BRIGHTNESS AND METHOD OF MANUFACTURING THE SAME - Disclosed is a nitride-based light emitting device having an inverse p-n structure in which a p-type nitride layer is first formed on a growth substrate. The light emitting device includes a growth substrate, a powder type seed layer for nitride growth formed on the growth substrate, a p-type nitride layer formed on the seed layer for nitride growth, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The p-type nitride layer is first formed on the growth layer and the n-type ZnO layer having a relatively low growth temperature is then formed thereon instead of an n-type nitride layer, thereby providing excellent crystallinity and high brightness. A method of manufacturing the same is also disclosed. | 08-30-2012 |
20120217471 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers. | 08-30-2012 |
20120217472 | BROADBAND LIGHT EMITTING DIODES AND METHOD FOR PRODUCING SAME - A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum. | 08-30-2012 |
20120217473 | Light Emitting Diode with Polarization Control - An improved light emitting heterostructure is provided. The heterostructure includes an active region having a set of barrier layers and a set of quantum wells, each of which is adjoined by a barrier layer. The quantum wells have a delta doped p-type sub-layer located therein, which results in a change of the band structure of the quantum well. The change can reduce the effects of polarization in the quantum wells, which can provide improved light emission from the active region. | 08-30-2012 |
20120217474 | PHOTONIC DEVICE AND METHOD OF MAKING THE SAME - The present invention relates to a photonic device comprising a plurality of nanostructures that extend from a substrate, each nanostructure comprising a generally longitudinal nanostructure body formed of a semiconductor material. Each nanostructure has a proximal end portion of a first crystal lattice structure and a distal end portion of a second crystal lattice structure that is expanded relative to the proximal end portion. Each nanostructure further comprises an optically active material optically associated with the distal end portion to form a heterojunction therebetween. The present invention further relates to a method of making the disclosed nanostructures. | 08-30-2012 |
20120223289 | LIGHT-EMITTING DIODE DISPLAY AND METHOD OF PRODUCING THE SAME - This invention relates light-emitting diode displays with silmple structure and fabricating method as well as excellent efficiency. In an embodiment, the display features a nanorod LED array arranged on a substrate and divided into a first, second, and third sub-pixels. Two electrodes are preferably arranged in a vertical configuration for driving the sub-pixels. In another embodiment, a method features the sub-pixels for emitting multi-primary colors being formed on a conductive substrate and thus simplifies the steps. | 09-06-2012 |
20120228580 | LIGHT-EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode device and a method for manufacturing the same. In one embodiment, the light-emitting diode device comprises a substrate, an undoped semiconductor layer and a current blocking structure disposed on the substrate in sequence, a plurality of light-emitting structures, separately disposed on the current blocking structure, a plurality of insulating spacers, respectively located between the adjacent light-emitting structures, and a plurality of conductive wires. Each of the light-emitting structures has a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, and a first electrode and a second electrode. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have different conductivity types. The plurality of conductive wires respectively connecting the first electrode of one of the adjacent light-emitting structures and the second electrode of the other light-emitting structure in sequence. | 09-13-2012 |
20120228581 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm | 09-13-2012 |
20120228582 | HYBRID VERTICAL CAVITY LIGHT EMITTING SOURCES - Vertical cavity light emitting sources that utilize patterned membranes as reflectors are provided. The vertical cavity light emitting sources have a stacked structure that includes an active region disposed between an upper reflector and a lower reflector. The active region, upper reflector and lower reflector can be fabricated from single or multi-layered thin films of solid states materials (“membranes”) that can be separately processed and then stacked to form a vertical cavity light emitting source. | 09-13-2012 |
20120235114 | LIGHT EMITTING CHIP - A light emitting chip includes a substrate, a first reflective layer formed on the substrate, a lighting structure formed on the first reflective layer, and a first electrode formed between the first reflective layer and the substrate. The lighting structure includes a first semiconductor layer, an active layer and a second semiconductor layer. A receiving groove is defined in the lighting structure and extends from the first reflective layer to the first semiconductor layer. The receiving groove has a second reflective layer formed on an interior sidewall thereof. The first electrode includes a base and a connecting section extending upwardly from the base. The connecting section is surrounded by the second reflective layer and electrically connects with the first semiconductor layer. The first and second reflective layers each are electrically insulating. | 09-20-2012 |
20120235115 | GROWTH OF III-V LED STACKS USING NANO MASKS - Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency. | 09-20-2012 |
20120235116 | LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION - One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species. | 09-20-2012 |
20120235117 | LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor. | 09-20-2012 |
20120241718 | HIGH PERFORMANCE LIGHT EMITTING DIODE - A vertical light emitting diodes (LEDs) with new construction for reducing the current crowding effect and increasing the light extraction efficiency (LEE) of the LEDs is provided. By providing at least one current blocking portion corresponded to an electrode, the current flows from the electrode may be diffused or distributed more laterally instead of straight downward directly under the electrode and the current crowding effect could be reduced thereby. By providing at least one current blocking portion covered by a mirror layer to form an omni-directional reflective (ODR) structure, the internal light of the LEDs may be reflected by the ODR structure and the LEE could be increased thereby. | 09-27-2012 |
20120241719 | Light Emitting Diode and Method for Manufacturing the Same - A light emitting diode (LED) is provided. The LED includes a carrying substrate, a semiconductor composite layer and an electrode. The semiconductor composite layer is disposed on the carrying substrate, and an upper surface of the semiconductor composite layer includes a patterned surface and a flat surface. The electrode is disposed on the flat surface. A method for manufacturing the light emitting diode is provided as well. | 09-27-2012 |
20120241720 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film. | 09-27-2012 |
20120241721 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, ELECTRONIC APPARATUS, AND LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting element ( | 09-27-2012 |
20120248404 | GALLIUM-NITRIDE LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - The present disclosure relates to a gallium-nitride light emitting diode and a manufacturing method thereof and the gallium-nitride light emitting diode includes an n-type nitride semiconductor layer formed on a substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type doped intermediate layer formed on the active layer; and a p-type nitride semiconductor layer formed on the intermediate layer. | 10-04-2012 |
20120248405 | SEMICONDUCTOR LIGHT-EMITTING STRUCTURE - A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer. | 10-04-2012 |
20120248406 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern. Therefore, the light focused on a region where the light intensity is high in the interference pattern can be effectively output to the outside, resulting in the improvement of light extraction performance as well as the achievement of desired directional characteristics. | 10-04-2012 |
20120248407 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an Al | 10-04-2012 |
20120248408 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device and a method of manufacturing the same are provided. The light-emitting device includes a compound semiconductor structure having a first N-type compound semiconductor layer, an active layer, and a P-type compound semiconductor layer, a P-type electrode layer that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer, a plurality of insulation walls disposed at two sides of the compound semiconductor structure and the P-type electrode layer, a plurality of N-type electrode layers penetrating the plurality of insulation walls, and a conductive substrate on which a plurality of N-type electrode connecting layers respectively corresponding to a plurality of N-type electrode layers are separated from a P-type electrode connecting layer corresponding to the P-type electrode layer. | 10-04-2012 |
20120248409 | Simultaneous Modulation of Quantum Dot Photoluminescence using Orthogonal Fluorescence Resonance Energy Transfer (FRET) and Charge Transfer Quenching (CTQ) - Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance energy transfer (FRET), so that the modified quantum dots have a plurality of photophysical properties. The FRET and charge transfer pathways operate independently, providing for two channels of control for varying luminescence of quantum dots having the same innate properties. | 10-04-2012 |
20120248410 | Thin Film Forming Method and Quantum Dot Device - An electron transporting surfactant is added to a raw material solution such that the electron transporting surfactant is coordinated on the surfaces of quantum dots, and after the dispersion solvent is evaporated by vacuum drying, the immersion in a solvent containing a hole transporting surfactant prepares a quantum dot dispersed solution with a portion of the electron transporting surfactant replaced with the hole transporting surfactant. The quantum dot dispersed solution is applied onto a substrate to prepare a hole transport layer and a quantum dot layer at the same time, and thereby to achieve a thin film which has a two-layer structure. | 10-04-2012 |
20120248411 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a nitride semiconductor light emitting device including: a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed on a non-etched region of the substrate, and having a first buffer layer and a first nitride semiconductor layer stacked thereon; a second buffer layer formed on the etched region of the substrate; a second nitride semiconductor layer formed on the second buffer layer and the protruded portion; a third nitride semiconductor layer formed on the second nitride semiconductor layer; an active layer formed on the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed on the active layer. According to the present invention, the optical extraction efficiency of the nitride semiconductor light emitting device can be enhanced. | 10-04-2012 |
20120256161 | Light Diode - A light-emitting diode is specified, comprising a first semiconductor body ( | 10-11-2012 |
20120256162 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode includes a substrate, an N-type semiconductor layer arranged on the substrate, an active layer, and a P-type semiconductor layer. The active layer includes a first barrier layer, a second barrier layer, and a quantum well structure layer arranged between the first and second barrier layers. The quantum well structure layer includes an InN layer, a GaN layer and an InGaN layer arranged on the first barrier layer in sequence. The InN layer has an upper surface connected to the GaN layer. The upper surface is rough. The InGaN layer has a concentration of In atoms in some regions of the InGaN layer which is higher that that in other regions thereof. The P-type semiconductor layer is arranged on the second barrier layer. | 10-11-2012 |
20120256163 | LIGHT EMITTING UNIT AND DISPLAY DEVICE INCLUDING THE SAME - A display device including a display panel and a light emitting unit providing light to the display panel is described herein. The light emitting unit includes a light emitting diode and a light emitting layer. The light emitting diode emits a first light. The light emitting layer includes quantum dots and fluorescent particles. The quantum dots are disposed on the light emitting diode and absorb the first light to emit a second light of a wavelength different from that of the first light. The fluorescent particles absorb the first light to emit a third light of a wave length different from those of the first and second light. | 10-11-2012 |
20120256164 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system. | 10-11-2012 |
20120261641 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a semiconductor light emitting device includes a stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. A transparent electrode is provided on a first major surface of the stacked body on a side of the first semiconductor layer, the transparent electrode having a thin part, a first thick part thicker than the thin part, and a plurality of second thick parts thicker than the thin part and extending along the first major surface from the first thick part. A first electrode is provided on the first thick part; and a second electrode is electrically connected to the second semiconductor layer. | 10-18-2012 |
20120261642 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND PHOTONIC CRYSTAL - An optoelectronic semiconductor component includes a semiconductor layer sequence having at least one active layer, and a photonic crystal that couples radiation having a peak wavelength out of or into the semiconductor layer sequence, wherein the photonic crystal is at a distance from the active layer and formed by superimposition of at least two lattices having mutually different reciprocal lattice constants normalized to the peak wavelength. | 10-18-2012 |
20120267606 | GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7×10 | 10-25-2012 |
20120267607 | EPITAXIAY WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING LED CHIP - A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided. | 10-25-2012 |
20120273749 | METHOD AND STRUCTURE FOR LED WITH NANO-PATTERNED SUBSTRATE - The present disclosure provides one embodiment of a method for fabricating light-emitting diode (LED) devices. The method includes forming a nano-mask layer on a first substrate, wherein the nano-mask layer has a randomly arranged grain pattern; growing a first epitaxy semiconductor layer in the first substrate, forming a nano-composite layer; growing a number of epitaxy semiconductor layers over the nano-composite layer; bonding a second substrate to the epitaxy semiconductor layers from a first side of the epitaxy semiconductor layers; applying a radiation energy to the nano-composite layer; and separating the first substrate from the epitaxy semiconductor layers from a second side of the epitaxy semiconductor layers. | 11-01-2012 |
20120273750 | LIGHT EMITTING DEVICES HAVING DOPANT FRONT LOADED TUNNEL BARRIER LAYERS - Light emitting devices described herein include dopant front loaded tunnel barrier layers (TBLs). A front loaded TBL includes a first surface closer to the active region of the light emitting device and a second surface farther from the active region. The dopant concentration in the TBL is higher near the first surface of the TBL when compared to the dopant concentration near the second surface of the TBL. The front loaded region near the first surface of the TBL is formed during fabrication of the device by pausing the growth of the light emitting device before the TBL is formed and flowing dopant into the reaction chamber. After the dopant flows in the reaction chamber during the pause, the TBL is grown. | 11-01-2012 |
20120273751 | LIGHT EMITTING DEVICE AND A MANUFACTURING METHOD THEREOF - The present invention provides a light emitting device and a method for manufacturing the light emitting device. The light emitting device includes a susceptor and a light emitting diode set on the susceptor. The light emitting diode includes an electrode layer connected to the susceptor and an LED die set on the electrode layer. The electrode layer is provided with a pyramid array structure surface and the pyramid array surface works as a reflective surface of the light emitting diode. The LED die is provided with an alveolate surface which works as the light exiting surface of the LED. According to the light emitting device provided in the present invention, the emanative light generated by the LED is emitted or reflected to a desired emitting direction. Further, the light emitting device has an alveolate light exiting surface and an LED having a pyramid array reflective surface, which increases the light emitting and reflective area of the LED, thereby improving the luminous efficiency. Besides, the light emitting device adopts a surface mount technology, which is easy to implement. | 11-01-2012 |
20120273752 | LATERAL-EPITAXIAL-OVERGROWTH THIN-FILM LED WITH NANOSCALE-ROUGHENED STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure and a method for fabricating the same. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure comprises a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure, wherein a nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. The present invention uses lateral epitaxial growth to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency. | 11-01-2012 |
20120273753 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a plurality of thin parts thinner than other part being provided in the first semiconductor layer; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. A transparent electrode is provided on a surface of the first semiconductor layer; a first electrode is provided on the transparent electrode; and a second electrode contacts a surface of the second semiconductor layer, wherein the second semiconductor layer is provided between the second electrode and the light emitting layer. A current blocking layer is provided for blocking a part of a current path between the transparent electrode and the second electrode, not overlapping the thin part in a planar view parallel to the surface of the second semiconductor layer. | 11-01-2012 |
20120273754 | LIGHT EMITTING DIODE - A light emitting diode includes a second electrode, a first semiconductor layer, an active layer, a second semiconductor layer, a reflector, and a first electrode. The second electrode, the first semiconductor layer, the active layer, the second semiconductor layer, and the reflector are stacked on the first electrode in that order. The first semiconductor layer defines a plurality of grooves on a surface contacting the second electrode. The plurality of grooves form a patterned surface used as the light extraction surface. A carbon nanotube layer is located on the patterned surface and embedded into the grooves. | 11-01-2012 |
20120273755 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes. | 11-01-2012 |
20120273756 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a carbon nanotube layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is adjacent to the substrate. The carbon nanotube layer is located between the first semiconductor layer and the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. | 11-01-2012 |
20120273757 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga—N bonds on the bottom surface has an N-face polarity. | 11-01-2012 |
20120273758 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE DEVICE - A nitride semiconductor light-emitting diode device includes an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer provided between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, while the active layer has a multiple quantum well structure including a quantum well layer and a barrier layer in contact with the p-type semiconductor layer, the barrier layer consists of a two-layer structure of an AlGaN layer and a GaN layer, and the AlGaN layer included in the barrier layer is in contact with a side of the quantum well layer closer to the p-type nitride semiconductor layer | 11-01-2012 |
20120280207 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip ( | 11-08-2012 |
20120286237 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including In | 11-15-2012 |
20120286238 | LIGHTING DEVICES, AN OPTICAL COMPONENT FOR A LIGHTING DEVICE, AND METHODS - A white-light emitting lighting device comprising one or more light emitting light sources (preferably solid state semiconductor light emitting diodes) that emit off-white light during operation, wherein the off-white light includes a spectral output including at least one spectral component in a first spectral region from about 360 nm to about 475 nm, at least one spectral component in a second spectral region from about 475 nm to about 575 nm, and at least one deficiency in at least one other spectral region, and an optical component comprising an optical material for converting at least a portion of the off-white light to one or more predetermined wavelengths, such that light emitted by the lighting device comprises white light, wherein the optical material comprises quantum confined semiconductor nanoparticles. Also disclosed is an optical component, lighting fixture, a cover plate for a lighting fixture, and methods. | 11-15-2012 |
20120286239 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising an n-type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer. | 11-15-2012 |
20120286240 | Methods of Fabricating Light Emitting Diode Packages - An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate. | 11-15-2012 |
20120292592 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga | 11-22-2012 |
20120292593 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×10 | 11-22-2012 |
20120292594 | DEVICE INCLUDING QUANTUM DOTS AND METHOD FOR MAKING SAME - A device comprises an anode; a cathode; a layer therebetween comprising quantum dots; and a first layer comprising a material capable of transporting and injecting electrons in, or forming, contact with the cathode, the material comprising nanoparticles of an inorganic semiconductor material. In one embodiment of the device, quantum dots comprise a core comprising a first semiconductor material that confines holes better than electrons in the core and an outer shell comprising a second semiconductor material that is permeable to electrons. In another embodiment of the device, the nanoparticles comprise n-doped inorganic semiconductor material, and a second layer comprising a material capable of transporting electrons is disposed between the layer including quantum dots and the first layer, wherein the second layer has a lower electron conductivity than the first. In a further embodiment of the device, the first layer is UV treated. A method and other embodiments are also disclosed. | 11-22-2012 |
20120292595 | LIGHT EMITTING DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS - A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor. | 11-22-2012 |
20120298950 | LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING - Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. | 11-29-2012 |
20120298951 | Optoelectronic Semiconductor Body with a Quantum Well Structure - An optoelectronic semiconductor body is provided, which contains a semiconductor material which is composed of a first component and a second component different from the first component. The semiconductor body comprises a quantum well structure, which is arranged between an n-conducting layer ( | 11-29-2012 |
20120298952 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER - According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations. | 11-29-2012 |
20120298953 | LIGHT EMITTING DEVICE - A light emitting device according to the embodiment includes a substrate having first and second surfaces opposite to each other and formed on the first surface thereof with a plurality of convex parts; and a light emitting structure formed on the first surface of the substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The light emitting structure has holes corresponding to the convex parts of the substrate. | 11-29-2012 |
20120298954 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced. | 11-29-2012 |
20120298955 | GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE, GROUP III NITRIDE BASED QUANTUM WELL STRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES - A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of In | 11-29-2012 |
20120298956 | Method of Separating Light-Emitting Diode from a Growth Substrate - A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge. | 11-29-2012 |
20120305887 | WHITE LIGHT EMITTING DIODE HAVING PHOTOLUMINESCENT LAYER - A white LED having a photoluminescent layer is provided, which includes a sapphire substrate, a gallium nitride buffer layer, an n-type gallium nitride layer, an aluminium gallium nitride multiquantum well, a p-type gallium nitride layer, a transparent conductive layer, a terbium-doped indium oxide layer as photoluminescent layer, a negative electrode, and a positive electrode, wherein the gallium nitride buffer layer, the n-type gallium nitride layer, the aluminium gallium nitride multiquantum well, the p-type gallium nitride layer, the transparent conductive layer, the terbium-doped indium oxide layer are sequentially formed on the sapphire substrate, and the negative electrode is formed on the exposed portion of the n-type gallium nitride layer and is electrically connected to the negative terminal V− of the power source, and the positive electrode is formed on the terbium-doped indium oxide layer and is electrically connected to the positive terminal V+ of the power source. | 12-06-2012 |
20120305888 | LIGHT-EMITTING DIODE WITH STRAIN-RELAXED LAYER - Disclosed is a light-emitting diode (LED) and the method to form the LED. The LED comprises: a first conductivity type semiconductor layer; a strain-relaxed layer over the first conductivity type semiconductor layer, the strain-relaxed layer comprising: a strain-absorbed layer over the first conductivity type semiconductor layer, the strain-absorbed layer containing a plurality of cavities in a substantial hexagonal-pyramid form; and a surface-smoothing layer on the strain-absorbed layer filling the cavities; an active layer over the strain-relaxed layer; and a second conductivity type semiconductor layer over the active layer. | 12-06-2012 |
20120305889 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first electrode layer electrically connected to the first conductive-type semiconductor layer, and a second electrode layer disposed on the second conductive-type semiconductor layer, wherein the second electrode layer includes a plurality of adhesive seeds spaced from one another on the light emitting structure, a reflective layer disposed on the plurality of adhesive seeds, and a protective layer disposed on the reflective layer, wherein the reflective layer contains silver (Ag) or an Ag alloy. As a result, it is possible to improve light reflectance and electrical properties of the electrode layer of the light emitting device and reliability of the electrode layer. | 12-06-2012 |
20120305890 | LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND LIGHTING DEVICE - A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (In | 12-06-2012 |
20120313074 | LONG WAVELENGTH LIGHT EMITTING DEVICES WITH HIGH QUANTUM EFFICIENCIES - Various embodiments of light emitting devices with high quantum efficiencies are described herein. In one embodiment, a light emitting device includes a first contact, a second contact spaced apart from the first contact, and a first active region between the first and second contacts. The first active region is configured to produce a first emission via electroluminescence when a voltage is applied between the first and second contacts, and the first emission having a first center wavelength. The light emitting device also includes a second active region spaced apart from the first active region. The second active region is configured to absorb at least a portion of the first emission and produce a second emission via photoluminescence, and the second emission having a second center wavelength longer than the first center wavelength. | 12-13-2012 |
20120313075 | OPTICAL COMPONENT, PRODUCTS INCLUDING SAME, AND METHODS FOR MAKING SAME - An optical component is disclosed that comprises a first substrate, an optical material comprising quantum confined semiconductor nanoparticles disposed over a predetermined region of a first surface of the first substrate, a layer comprising an adhesive material disposed over the optical material and any portion of the first surface of the first substrate not covered by the optical material, and a second substrate disposed over the layer comprising an adhesive material, wherein the first and second substrates are sealed together. In certain embodiments, the optical component further includes a second optical material comprising quantum confined semiconductor nanoparticles disposed between the layer comprising the adhesive material and the second substrate. Method are also disclosed. Also disclosed are products including the optical component. | 12-13-2012 |
20120313076 | LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES - A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device. | 12-13-2012 |
20120313077 | HIGH EMISSION POWER AND LOW EFFICIENCY DROOP SEMIPOLAR BLUE LIGHT EMITTING DIODES - High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs). | 12-13-2012 |
20120319079 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers. | 12-20-2012 |
20120319080 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING SAME - Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer | 12-20-2012 |
20120319081 | MULTI-LUMINOUS ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same. | 12-20-2012 |
20120326117 | SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating a first semiconductor layer of a first conductivity type having a first sheet resistance, a light emitting layer, and a second semiconductor layer of a second conductivity type and includes a cutout unit formed at an end side and an indentation unit extending from the cutout unit in a first direction toward the other end side and branching or bending in a second direction substantially perpendicular to the first direction as well as bending or branching in a direction opposite to the second direction. A transparent conductive film is formed on the semiconductor laminated body and has a second sheet resistance less than the first sheet resistance. A first thin wire electrode is formed along the indentation unit. A second thin wire electrode is formed on the transparent conductive film. | 12-27-2012 |
20120326118 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - In one embodiment, a semiconductor light emitting device includes a substrate, an electrically-conductive reflection film, an active region, a first electrode, a transparent conductive film and a second electrode. In the active region, a first transparent electrode, a first conductivity type contact layer, a light emitting layer, a second conductivity type contact layer and a second transparent electrode are formed and stacked on the electrically-conductive reflection film. The first electrode is provided away from the active region on the electrically-conductive reflection film. One end of the transparent conductive film is provided to cover the upper portion of the second transparent electrode, while the other end of the transparent conductive film is provided above the electrically-conductive reflection film through an insulating film. The transparent conductive film is in contact with a lateral surface of the active region through the insulating film. | 12-27-2012 |
20120326119 | LIGHT EMITTING DISPLAY DEVICE HAVING NANOWIRE - The invention is a light emitting display device having a nanowire that emits light when an electric current is applied. The disclosed light emitting display device comprises: a nanowire light emitting element electrically connected to a first power line; a driving transistor electrically connected between the light emitting element and a second power line; a capacitor electrically connected between the driving transistor, the second power line, and a data line; and a switching transistor electrically connected between the driving transistor, the data line, and a scanning line. The invention discloses a light emitting display device comprising: a nanowire light emitting transistor electrically connected between a first power line and a second power line; a capacitor electrically connected between the nanowire light emitting transistor, second power line, and a data line; and a switching transistor electrically connected between the nanowire light emitting transistor, data line, capacitor, and a scanning line. | 12-27-2012 |
20120326120 | TRANSPARENT LED WAFER MODULE AND METHOD FOR MANUFACTURING SAME - A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer, where both surfaces of the conductor LED device are entirely grown on the transparent material, and then a transparent glass substrate is restacked, thereby securing a high amount of light. | 12-27-2012 |
20120326121 | VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. | 12-27-2012 |
20130001508 | LIGHT EMITTING DIODE - An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided. | 01-03-2013 |
20130001509 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer. | 01-03-2013 |
20130001510 | OPTOELECTRONIC DEVICE HAVING CURRENT BLOCKING INSULATION LAYER FOR UNIFORM TEMPERATURE DISTRIBUTION AND METHOD OF FABRICATION - An optoelectronic device includes a conductive base, a reflective conductive layer on the conductive base, a first semiconductor layer on the conductive layer configured as a first confinement layer, an active layer on the first semiconductor layer configured to emit electromagnetic radiation, a second semiconductor layer on the active layer configured as a second confinement layer, an electrode on the second semiconductor layer, and a current blocking structure on the reflective conductive layer comprising a thin transparent insulation layer aligned with the electrode configured to block current flow from the electrode, to dissipate heat generated at an interface between the first semiconductor layer and the reflective conductive layer, and to transmit electromagnetic radiation reflected from the reflective conductive layer, | 01-03-2013 |
20130001511 | Elevated LED - The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light. | 01-03-2013 |
20130001512 | NITRIDE GROUP SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING MULTIQUANTUM WELL STRUCTURE - A nitride group semiconductor light emitting device includes a substrate, n-type and p-type semiconductor layers, and an active region. The n-type and p-type semiconductor layers are formed on or above the substrate. The active region is interposed between the n-type and p-type semiconductor layers. The active region includes barrier layers that are included in a multiquantum well structure, and an end barrier layer that has a thickness greater than the barrier layer, and is arranged closest to the p-type semiconductor layer. The average thickness of the last two barrier layers that are arranged adjacent to the end barrier layer is smaller than the average thickness of the other barrier layers among the thicknesses of the barrier layers that are included in the multiquantum well structure. | 01-03-2013 |
20130001513 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor device includes: a semiconductor multilayer structure | 01-03-2013 |
20130009130 | LATERALLY CONTACTED BLUE LED WITH SUPERLATTICE CURRENT SPREADING LAYER - A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The PAN structure includes an n-type GaN layer, a light-emitting active layer involving indium, and a p-type GaN layer. The n-type GaN layer has a thickness of at least 500 nm. A Low Resistance Layer (LRL) is disposed between the substrate and the PAN structure such that the LRL is in contact with the bottom of the n-layer. In one example, the LRL is an AlGaN/GaN superlattice structure whose sheet resistance is lower than the sheet resistance of the n-type GnA layer. The LRL reduces current crowding by conducting current laterally under the n-type GaN layer. The LRL reduces defect density by preventing dislocation threads in the underlying GaN template from extending up into the PAN structure. | 01-10-2013 |
20130009131 | DEVICE INCLUDING QUANTUM DOTS - A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed. | 01-10-2013 |
20130015425 | LIGHT-EMITTING ELEMENT WITH MULTIPLE LIGHT-EMTTING STACKED LAYERSAANM Lin; Yi-ChiehAACI TainanAACO TWAAGP Lin; Yi-Chieh Tainan TWAANM Lee; Rong-RenAACI TainanAACO TWAAGP Lee; Rong-Ren Tainan TW - A light-emitting element includes a substrate; a first light-emitting stacked layer formed on the substrate; a tunneling layer formed on the first light-emitting stacked layer; a second light-emitting stacked layer formed on the tunneling layer; and a contact layer formed on the second light-emitting stacked layer. | 01-17-2013 |
20130015426 | METHOD OF MANUFACTURING OF A SEMI-CONDUCTOR ELEMENT AND SEMI-CONDUCTOR ELEMENT - A method of manufacturing of a semi-conductor element, comprising the following steps: providing a substrate, the substrate having a surface, the surface being partially coated with a coating and having at least one uncoated area, and growing a truncated pyramid of gallium nitride on the uncoated area, wherein the method comprises the following step: growing at least one gallium nitride column on the truncated pyramid. | 01-17-2013 |
20130015427 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 01-17-2013 |
20130020550 | Nanostructured Electroluminescent Device and Display - An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers. | 01-24-2013 |
20130020551 | GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the normal axis of the primary surface of the substrate. The p-type cladding layer is doped with a p-type dopant providing an acceptor level, and the p-type cladding layer contains an n-type impurity providing a donor level. An active layer is disposed between the n-type cladding layer and the p-type cladding layer. The concentration of the p-type dopant is greater than that of the n-type impurity. The difference (E(BAND)−E(DAP)) between the energy E(BAND) of a band-edge emission peak value in the photoluminescence spectrum of the p-type cladding layer and the energy E(DAP) of a donor-acceptor pair emission peak value in the photoluminescence spectrum is not more than 0.42 electron volts. | 01-24-2013 |
20130020552 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece. | 01-24-2013 |
20130020553 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced. | 01-24-2013 |
20130020554 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. | 01-24-2013 |
20130020555 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITING DEVICE - A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of Al | 01-24-2013 |
20130026445 | QUANTUM DOT OPTOELECTRONIC DEVICE AND METHODS THEREFOR - An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing. | 01-31-2013 |
20130026446 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer. | 01-31-2013 |
20130026447 | Surface-Emitting Semiconductor Light-Emitting Diode - The invention is directed to a surface emitting semiconductor light-emitting diode (LED) in which a reflector layer ( | 01-31-2013 |
20130026448 | LIGHT EMITTING DIODE (LED) DIE HAVING PERIPHERAL ELECTRODE FRAME AND METHOD OF FABRICATION - A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured to spread current across the first-type semiconductor layer. A method for fabricating the light emitting diode (LED) die includes the step of forming an electrode on the outer periphery of the first-type semiconductor layer at least partially enclosing and spaced from the multiple quantum well (MQW) layer configured to spread current across the first-type semiconductor layer. | 01-31-2013 |
20130032779 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed. | 02-07-2013 |
20130037779 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer. | 02-14-2013 |
20130043457 | LIGHT EMITTING DEVICE - Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a first conductive semiconductor layer; a superlattice layer on the first conductive semiconductor layer; an active layer on the superlattice layer; and a second conductive semiconductor layer on the active layer. The superlattice layer comprises In | 02-21-2013 |
20130048939 | LIGHT EMITTING DEVICE HAVING GROUP III-NITRIDE CURRENT SPREADING LAYER DOPED WITH TRANSITION METAL OR COMPRISING TRANSITION METAL NITRIDE - A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well doped with transition metal. Also provided is a method of forming transition-metal containing AlInGaN electrical conductive material. | 02-28-2013 |
20130048940 | SOLID STATE RADIATION TRANSDUCERS AND METHODS OF MANUFACTURING - Solid state radiation transducer (SSRT) assemblies and method for making SSRT assemblies. In one embodiment, a SSRT assembly comprises a first substrate having an epitaxial growth material and a radiation transducer on the first substrate. The radiation transducer can have a first semiconductor material grown on the first substrate, a second semiconductor material, and an active region between the first and second semiconductor materials. The SSRT can also have a first contact electrically coupled to the first semiconductor material and a second contact electrically coupled to the second semiconductor material. The first substrate has an opening through which radiation can pass to and/or from the first semiconductor material. | 02-28-2013 |
20130048941 | SOLID STATE LIGHT EMITTING SEMICONDUCTOR STRUCTURE AND EPITAXY GROWTH METHOD THEREOF - A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions separated from each other are formed on the substrate. A buffer layer is formed on the protrusions, and fills or partially fills the gaps between the protrusions. A semiconductor epitaxy stacking layer is formed on the buffer layer, wherein the semiconductor epitaxy stacking layer is constituted by a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence. | 02-28-2013 |
20130048942 | NITRIDE SEMICONDUCTOR TEMPLATE AND LIGHT-EMITTING DIODE - A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer having an oxygen-doped layer formed on the substrate, and a silicon-doped layer formed on the oxygen-doped layer. A total thickness of the group III nitride semiconductor layer is not smaller than 4 μm and not greater than 10 μm, and an average silicon carrier concentration in the silicon-doped layer is not lower than 1×10 | 02-28-2013 |
20130048943 | ORGANIC LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - There are provided an organic light emitting diode and a fabrication method thereof. The organic light emitting diode includes: an anode formed on a substrate; a thin film layer formed on the anode and including graphene; a light emitting polymer layer formed on the thin film layer; and a cathode formed on the light emitting polymer layer. Heat generated from the device can be effectively dissipated, stability of the device can be enhanced, and a life span of the device can be extended. | 02-28-2013 |
20130048944 | LIGHT EMITTING DEVICE - Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well. | 02-28-2013 |
20130056704 | SINGLE-PHOTON GENERATOR AND METHOD OF ENHANCEMENT OF BROADBAND SINGLE-PHOTON EMISSION - A single-photon generator contains nitrogen-vacancies or other color centers in diamond as emitters of single photons which are excited by the laser beam or another optical source and can work stably under normal conditions, the metamaterial with hyperbolic dispersion as enhancing environment, and photonic guiding structure to collect and transmit single photons further. Single photons generators are fundamental elements for quantum information technologies such as quantum cryptography, quantum information storage and optical quantum computing | 03-07-2013 |
20130056705 | METHOD OF MANUFACTURING QUANTUM DOT LAYER AND QUANTUM DOT OPTOELECTRONIC DEVICE INCLUDING THE QUANTUM DOT LAYER - A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the sacrificial layer, the quantum dot layer and the stamp; and removing the sacrificial layer from the quantum dot layer using a solution that dissolves the sacrificial layer. | 03-07-2013 |
20130056706 | QUANTUM DOT LED LIGHT SYSTEM AND METHOD - The present disclosure provides methods of using quantum dots or Q dots or a similar nanocrystal to transfer, for example, excess LED light energy in the blue band to the red band where such LEDs tend to be deficient. This approach would balance the overall spectrum of the LED without a corresponding loss in brightness as would be the case where the light from the LED was passed through a conventional filter. The Q dots could be applied to the lens portion of the LED after the high temperature processes are completed or coated to a clear filter to be placed in the LED light path. | 03-07-2013 |
20130062592 | LIGHT EMITTING DIODE (LED) DICE HAVING WAVELENGTH CONVERSION LAYERS AND METHODS OF FABRICATION - A light emitting diode (LED) die includes a wavelength conversion layer having a base material, and a plurality of particles embedded in the base material including wavelength conversion particles, and reflective particles. A method for fabricating light emitting diode (LED) dice includes the steps of mixing the wavelength conversion particles in the base material to a first weight percentage, mixing the reflective particles in the base material to a second weight percentage, curing the base material to form a wavelength conversion layer having a selected thickness, and attaching the wavelength conversion layer to a die. | 03-14-2013 |
20130069032 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER - According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer. | 03-21-2013 |
20130069033 | SEMICONDUCTOR DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING WAFER - According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit. | 03-21-2013 |
20130069034 | LIGHT-EMITTING ELEMENT HAVING NITRIDE SEMICONDUCTOR MULTIQUANTUM BARRIER, AND PROCESS FOR PRODUCTION THEREOF | 03-21-2013 |
20130069035 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer, and an electron blocking layer. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a nitride semiconductor. The electron blocking layer is provided between the light emitting layer and the p-type semiconductor layer and has an aluminum composition ratio increasing from the light emitting layer toward the p-type semiconductor layer. | 03-21-2013 |
20130069036 | LIGHT-EMITTING ELEMENT, METHOD OF PRODUCING LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE - A light-emitting element where a positive electrode is formed on the surface of a transparent substrate; a hole transport layer is formed on the surface of the positive electrode; and a light-emitting layer made of quantum dots is formed on the surface of the hole transport layer. The light-emitting layer has a light-emitting region that emits light of a first predetermined wavelength in which a surfactant is present on the surface of the quantum dots and a non-light-emitting region that does not emit light in which a surfactant is absent on the surface of the quantum dots. A second light-emitting layer that emits light of a second predetermined wavelength is formed on the surface of the light-emitting layer, and a negative electrode is formed on the surface of the second light-emitting layer. | 03-21-2013 |
20130069037 | Light-Emitting Element, Light-Emitting Device and Electronic Device - The light-emitting element of the present invention includes a light-emitting layer and a layer for controlling movement of carriers between a pair of electrodes. The layer for controlling movement of carriers includes a first organic compound having a carrier transporting property and a second organic compound for reducing the carrier transporting property of the first organic compound, and the second organic compound is dispersed in the first organic compound. The layer for controlling movement of carriers is provided in such a manner, whereby change in carrier balance with time can be suppressed. Therefore, a light-emitting element having a long lifetime can be obtained. | 03-21-2013 |
20130069038 | LIGHT CONVERTING AND EMITTING DEVICE WITH SUPPRESSED DARK-LINE DEFECTS - Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency. | 03-21-2013 |
20130075691 | Deep Ultraviolet Light Emitting Diode - A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a percolated carbon atomic plane. | 03-28-2013 |
20130075692 | SEMICONDUCTOR NANOPARTICLE-BASED LIGHT EMITTING MATERIALS - A light emitting layer including a plurality of light emitting particles embedded within a host matrix material. Each of said light emitting particles includes a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. A method of fabricating a light emitting layer comprising a plurality of light emitting particles embedded within a host matrix material, each of said light emitting particles comprising a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. The method comprises providing a dispersion containing said light emitting particles, depositing said dispersion to form a film, and processing said film to produce said light emitting layer. | 03-28-2013 |
20130075693 | COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer. | 03-28-2013 |
20130075694 | STRAIN-CONTROLLED ATOMIC LAYER EPITAXY, QUANTUM WELLS AND SUPERLATTICES PREPARED THEREBY AND USES THEREOF - Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon. | 03-28-2013 |
20130075695 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer. | 03-28-2013 |
20130075696 | LIGHT-EMITTING ELEMENT WITH MULTIPLE LIGHT-EMTTING STACKED LAYERS - A light-emitting device includes a first light-emitting element emitting a first light with a first dominant wavelength including a first MQW structure including a first number of MQW pairs; a second MQW structure on the first MQW structure, including a second number of MQW pairs; and a tunneling layer between the first MQW structure and the second MQW structure; and a second light-emitting element emitting a third light with a third dominant wavelength, wherein the first number is different from the second number. | 03-28-2013 |
20130075697 | ULTRAVIOLET IRRADIATION APPARATUS - Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency. | 03-28-2013 |
20130082236 | LIGHT EMITTING REGIONS FOR USE WITH LIGHT EMITTING DEVICES - A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that generates light upon the recombination of electrons and holes. The active material in some cases has one or more V-pits at a density between about 1 V-pit/μm | 04-04-2013 |
20130082237 | ULTRAVIOLET LIGHT EMITTING DEVICES HAVING ENHANCED LIGHT EXTRACTION - Light emitting devices having an enhanced degree of polarization, P | 04-04-2013 |
20130082238 | LIGHT-EMITTING DEVICE - Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer. | 04-04-2013 |
20130082239 | LIGHT EMITTING DIODE FABRICATED BY EPITAXIAL LIFT-OFF - A method of fabricating a light emitting diode using an epitaxial lift-off process includes forming a sacrificial layer on a substrate, forming a light emitting diode structure on the sacrificial layer with an epitaxial material, forming a light reflecting layer on the light emitting diode structure, and removing the sacrificial layer using an etching process to separate the substrate from the light emitting diode structure. | 04-04-2013 |
20130087759 | Light Emitting Diode (LED) Using Carbon Materials - Carbon-based light emitting diodes (LEDs) and techniques for the fabrication thereof are provided. In one aspect, a LED is provided. The LED includes a substrate; an insulator layer on the substrate; a first bottom gate and a second bottom gate embedded in the insulator layer; a gate dielectric on the first bottom gate and the second bottom gate; a carbon material on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material serves as a channel region of the LED; and metal source and drain contacts to the carbon material. | 04-11-2013 |
20130087760 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×10 | 04-11-2013 |
20130087761 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing | 04-11-2013 |
20130087762 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL - According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 | 04-11-2013 |
20130087763 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The inventive concept provides light emitting diodes and methods of manufacturing the same. The light emitting diode may include a first electrode layer, a light emitting layer on the first electrode layer, a second electrode layer on the light emitting layer, and a buffer layer formed on the second electrode layer, the buffer layer having concave-convex patterns increasing extraction efficiency of light generated from the light emitting layer. | 04-11-2013 |
20130087764 | GAN BASED GROUP III-V NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions or the same direction with a high-resistant substrate therebetween and material layers for light emission or lasing, the second electrode directly contacts a region of the outmost material layer exposed through an etched region of the high-resistant substrate. A thermal conductive layer may be formed on the bottom of the high-resistant substrate to cover the exposed region of the outmost material layer. | 04-11-2013 |
20130087765 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active layer on the second semiconductor layer; a third semiconductor layer on the active layer; and a fourth semiconductor layer on the third semiconductor layer, wherein the first semiconductor layer has a composition equation of Al | 04-11-2013 |
20130092896 | Optoelectronic Device with a Wide Bandgap and Method of Making Same - A light-emitting device epitaxially-grown on a GaAs substrate which contains an active region composed of Al | 04-18-2013 |
20130092897 | Ultrafast photonic crystal cavity single-mode light-emitting diode - Electrical pumping of photonic crystal (PC) nanocavities using a lateral p-i-n junction is described. Ion implantation doping can be used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated in a first experimental device. Electrically pumped lasing is demonstrated in a second experimental device. High speed modulation of a single mode LED is demonstrated in a third experimental device. This approach provides several significant advantages. Ease of fabrication is improved because difficult timed etch steps are not required. Any kind of PC design can be employed. Current flow can be lithographically controlled to focus current flow to the active region of the device, thereby improving efficiency, reducing resistance, improving speed, and reducing threshold. Insulating substrates can be employed, which facilitates inclusion of these devices in photonic integrated circuits. | 04-18-2013 |
20130092898 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side. | 04-18-2013 |
20130092899 | COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids. | 04-18-2013 |
20130092900 | NANOWIRE SIZED OPTO-ELECTRONIC STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a minor provided on a second conductivity type semiconductor side of the structure. | 04-18-2013 |
20130092901 | EPITAXIAL WAFER FOR LIGHT-EMITTING DIODES - The present invention relates to an epitaxial wafer for a light-emitting diode wherein the peak emission wavelength is 655 nm or more, and it is possible to improve reliability. The epitaxial wafer for light-emitting diodes includes a GaAs substrate ( | 04-18-2013 |
20130099198 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element, including a first semiconductor layer with a first conductive type, a second semiconductor layer with a second conductive type, a semiconductor light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode having a mesh-shaped structure with a plurality of mesh shapes provided on the first semiconductor layer opposed to the semiconductor light emitting layer, a plurality of second electrodes provided on the second semiconductor layer opposed to the semiconductor light emitting layer, each of the second electrode having a dot shape and being superimposed with the center of each of the mesh shapes in plain view with parallel to a surface of the second semiconductor layer. | 04-25-2013 |
20130099199 | NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods. | 04-25-2013 |
20130099200 | LAYER ASSEMBLY - A device including a locally modified buried first layer. A second layer is arranged on top of the first layer. The first layer includes at least one modified section and at least one unmodified section. The modified material of the locally modified buried first layer changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section. At least one nanostructure is placed on top of the second layer in an area, which is located above the at least one unmodified section of the first layer or adjacent thereto, said at least one nanostructure being formed by a strain-sensitive third material deposited on the locally strained second layer. | 04-25-2013 |
20130099201 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. | 04-25-2013 |
20130105761 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME | 05-02-2013 |
20130105762 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE | 05-02-2013 |
20130112939 | NEW III-NITRIDE GROWTH METHOD ON SILICON SUBSTRATE - A circuit structure includes a substrate and a patterned dielectric layer over the substrate. The patterned dielectric layer includes a plurality of vias; and a number of group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layers include a first layer in the vias, a second layer over the first layer and the dielectric layer, and a bulk layer over the second layer. | 05-09-2013 |
20130112940 | SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL - Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. | 05-09-2013 |
20130112941 | SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL WITH INSULATOR COATING - Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core. | 05-09-2013 |
20130112942 | COMPOSITE HAVING SEMICONDUCTOR STRUCTURES EMBEDDED IN A MATRIX - Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing. | 05-09-2013 |
20130112943 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, in a semiconductor light emitting device, a light emitting layer is partially provided on a first semiconductor layer of a first conductivity type, and has a multiple quantum well structure made by alternately laminating well layers having a first impurity concentration of the first conductivity type and barrier layers having a second impurity concentration of the first conductivity type higher than the first impurity concentration. A second semiconductor layer of a second conductivity type is provided on the light emitting layer, and has a single composition and uniform bandgap. A first distance between a first electrode provided on the first semiconductor layer and a second electrode provided on the second semiconductor layer in a direction parallel to the light emitting layer is larger than a second distance between the first electrode and the second electrode in a direction perpendicular to the light emitting layer. | 05-09-2013 |
20130112944 | NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode. | 05-09-2013 |
20130112945 | NANOWIRE-BASED OPTOELECTRONIC DEVICE FOR LIGHT EMISSION - An optoelectronic device includes:
| 05-09-2013 |
20130119345 | THIN FILM TRANSISTOR AND A DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other. | 05-16-2013 |
20130126825 | High Speed Optical Tilted Charge Devices And Methods - A method for producing optical signals with improved efficiency, including the following steps: providing a layered semiconductor structure that includes a substrate, a semiconductor collector region of a first conductivity type, a semiconductor base region of a second conductivity type disposed on the collector region, and a semiconductor emitter region of the first semiconductor type disposed as a mesa over a portion of a surface of the base region; providing, in the base region, at least one region exhibiting quantum size effects; providing collector, base, and emitter electrodes, respectively coupled with the collector, base and emitter regions; providing a tunnel barrier layer over at least the exposed portion of the surface of the base region; and applying signals with respect to the collector, base, and emitter electrodes to produce optical signals from the base region. | 05-23-2013 |
20130126826 | Optical Tilted Charge Devices And Methods - A method for making an optical tilted-charge device that is substantially matched to GaAs lattice constant, including the following steps: providing a layered semiconductor structure that includes: a GaAs substrate; a semiconductor collector region; a semiconductor base region that includes a doped GaAs second base sub-region, an InGaAsN quantum size region, and a doped GaAs first base sub-region; and a semiconductor emitter region; and providing collector, base, and emitter electrodes respectively coupled with the collector region, the base region, and the emitter region. Electrical signals, applied with respect to the collector, base, and emitter electrodes, produces light emission from the base region. | 05-23-2013 |
20130126827 | LIGHT EMITTING DIODE STRUCTURE - A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate. | 05-23-2013 |
20130126828 | OPTOELECTRONIC DEVICE BASED ON NON-POLAR AND SEMI-POLAR ALUMINUM INDIUM NITRIDE AND ALUMINUM INDIUM GALLIUM NITRIDE ALLOYS - A high-power and high-efficiency light emitting device with emission wavelength (λ | 05-23-2013 |
20130126829 | HIGH EFFICIENCY LIGHT EMITTING DIODE - A high-efficiency LED includes a substrate, an n-semiconductor layer, an active layer, a p-semiconductor layer, and a transparent electrode layer. The substrate has a plurality of tapered recesses in the underside thereof, the recesses being filled with light-reflecting filler. | 05-23-2013 |
20130134385 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating, in order, a first semiconductor layer of a first conductivity-type, a semiconductor light emitting layer and a second semiconductor layer of a second conductivity-type. The semiconductor laminated body includes a plurality of trenches arranged in a periodical manner to penetrate through the second semiconductor layer and the semiconductor light emitting layer and reach the first semiconductor layer. An insulating film is buried into the trenches, and has transparency to light emitted from the semiconductor light emitting layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode covers an upper surface of the second semiconductor layer. | 05-30-2013 |
20130134386 | LIGHT EMITTING DIODE HAVING STRAIN-ENHANCED WELL LAYER - An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer. | 05-30-2013 |
20130134387 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURE THEREOF, AND MANUFACTURING SYSTEM OF SEMICONDUCTOR LIGHT EMITTING ELEMENT - Manufacturing variation (production fluctuation) of designed doping concentration and the concentration distribution in the direction of depth can be inhibited and light emitting output can be improved and stabilized. A capacitance measuring step, wherein, after the formation of a p-type electrode | 05-30-2013 |
20130134388 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - To provide a nitride semiconductor light-emitting element in which a buffer layer provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer has a first buffer layer expressed by an equation of In | 05-30-2013 |
20130134389 | LIGHT-EMITTING DEVICE HAVING A GAIN REGION AND A REFLECTOR - A light-emitting device has a first cladding layer, an active layer formed above the first cladding layer, a second cladding layer formed above the active layer, a gain region, and a reflecting part. The active layer has first and second side surfaces parallel to each other. The gain region has a first end surface disposed on the first side surface. The gain region also has a second end surface disposed inside from the second side surface and angled relative to the second side surface. The second end surface, the gain region and the first end surface are provided in a first normal direction relative to the second end surface. The reflecting part is disposed next to the second end surface. | 05-30-2013 |
20130134390 | LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, AND ILLUMINATION DEVICE - A light-emitting diode of the present invention includes a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer and a barrier layer each formed from a compound semiconductor having a composition formula of (Al | 05-30-2013 |
20130140519 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 06-06-2013 |
20130140520 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 06-06-2013 |
20130140521 | OPTOELECTRONIC DEVICE INCLUDING NANOWIRES WITH A CORE/SHELL STRUCTURE - Optoelectronic device including light-emitting means in the form of nanowires ( | 06-06-2013 |
20130140522 | LIGHT-EMITTING PANEL, MANUFACTURING METHOD OF LIGHT-EMITTING PANEL, AND FILM FORMING SYSTEM - A light-emitting panel includes: a substrate; and a light-emitting functional multilayer formed on the substrate, wherein the light-emitting functional multilayer including a first functional layer and a second functional layer, a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness of part of the first functional layer positioned in a second light-emitting region, a thickness of part of the second functional layer positioned in the first light-emitting region is greater than a thickness of part of the second functional layer positioned in the second light-emitting region, and when the light-emitting functional multilayer is viewed in a layering direction thereof, the first light-emitting region and the second light-emitting region are adjacent or distant from each other in a direction perpendicular to the layering direction, and each include a plurality of pixels that are each composed of a plurality of adjacent sub-pixels. | 06-06-2013 |
20130146835 | NANOSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME - A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. | 06-13-2013 |
20130146836 | CNT-BASED ELECTRONIC AND PHOTONIC DEVICES - The carbon nanotube-based electronic and photonic devices are disclosed. The devices are united by the same technology as well as similar elements for their fabrication. The devices consist of the vertically grown semiconductor nanotube having two Schottky barriers at the nanotube ends and one Schottky barrier at the middle of the nanotube. Depending on the Schottky barrier heights and bias arrangements, the disclosed devices can operate either as transistors, CNT MESFET and CNT Hot Electron Transistor, or as a CNT Photon Emitter. | 06-13-2013 |
20130146837 | LIGHT EMITTING DIODE WITH MULTIPLE TRANSPARENT CONDUCTIVE LAYERS AND METHOD FOR MANUFACTURING THE SAME - An LED includes a first semiconductor layer, a second semiconductor layer, an active layer, a first transparent conductive layer, and a second transparent conductive layer. The first transparent conductive layer is formed on the second semiconductor layer. The second transparent conductive layer is formed on the first transparent conductive layer. The thickness of the first transparent conductive layer is less than that of the second transparent conductive layer. The density of the first transparent conductive layer is larger than that of the second transparent conductive layer. The disclosure further includes a method for manufacturing the LED. | 06-13-2013 |
20130146838 | QUANTUM DOT DEVICE INCLUDING DIFFERENT KINDS OF QUANTUM DOT LAYERS - A quantum dot device includes: a cathode layer; an anode layer; an active layer that is disposed between the cathode layer and the anode layer and includes a quantum layer; and an electron movement control layer that is disposed between the cathode layer and the anode layer and includes a different kind of quantum layer having an energy level different from that of the quantum layer comprised in the active layer. | 06-13-2013 |
20130146839 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device includes a sapphire substrate; and an n contact layer, an n cladding layer, a light-emitting layer, a p cladding layer, and a p contact layer, each of the layers being formed of Group III nitride semiconductor, are sequentially deposited on the sapphire substrate. The n cladding layer includes two layers of a high impurity concentration layer and a low impurity concentration layer in this order on the n contact layer, and the low impurity concentration layer is in contact with the light-emitting layer. The low impurity concentration layer is a layer having a lower n-type impurity concentration than that of the high impurity concentration layer, which has an n-type impurity concentration of 1/1000 to 1/100 of the p-type impurity concentration of the p cladding layer and a thickness of 10 Å to 400 Å. | 06-13-2013 |
20130146840 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of Al | 06-13-2013 |
20130146841 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package includes a body having a cavity, at least one insulating layer disposed on the body, first and second electrode layers disposed on the insulating layer and electrically isolated from each other, at least one light emitting device disposed on a bottom surface of the cavity and electrically connected to the first and second electrode layer, a light-transmissive resin layer sealing the light emitting device disposed in the cavity, and a metal layer disposed on a rear surface of the body to face the light emitting device, wherein the light emitting device is grown in an m-direction on the (1123) plane of a substrate and includes a light emitting structure including a first conductive semiconductor layer, and active layer, and a second conductive semiconductor layer. | 06-13-2013 |
20130146842 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes first conductivity type and second conductivity type semiconductor layers, an active layer disposed between the semiconductor layers and having a structure in which one or more quantum well layers and one or more quantum barrier layers are alternately disposed An electron blocking layer is disposed between the active layer and the second conductivity type semiconductor layer. A capping layer is disposed between the active layer and the electron blocking layer and blocking a dopant element from being injected into the active layer from the second conductivity type semiconductor layer. | 06-13-2013 |
20130153856 | INFRARED LED DEVICE WITH ISOLATION AND METHOD OF MAKING - An infrared LED device comprising a plurality of LED mesas; each mesa being approximately 25 to 500 microns separated by a gap of approximately 50 to 100 microns; each mesa having at least two indium contacts; a substrate; and a plurality of leads for connection to the contacts, whereby upon application of electrical power infrared light emission occurs. The method of making comprises providing a first substrate; using molecular beam epitaxy, growing a quantum well structure comprising alternating active and injection regions on the substrate; growing a thin p-type layer on the quantum well structure; etching the mesa area down to the substrate to form a plurality of mesas, forming first electrical contacts; deep etching to isolate each of the mesas; depositing first indium contacts on the mesas; providing a second substrate; depositing second electrical contacts; bonding the first and second substrates at the points of the electrical contacts. | 06-20-2013 |
20130153857 | SEMICONDUCTOR LIGHT EMITTING DEVICE - In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode, a second electrode and a transparent conductive film. The stacked structure includes a first semiconductor layer with a first conductivity type, a light emitting layer and a second semiconductor layer with a second conductivity type which are formed and stacked directly or indirectly. The stacked structure is taken out light from the light emitting layer side to the second semiconductor layer side. The first electrode is connected to the first semiconductor layer. The second electrode is connected to a first principal surface of the second semiconductor layer which is exposed at the light emitting layer side. The second electrode is arranged in parallel with the first electrode. The transparent conductive film is provided so as to cover a second principal surface of the second semiconductor layer. | 06-20-2013 |
20130153858 | NITRIDE SEMICONDUCTOR TEMPLATE AND LIGHT-EMITTING DIODE - A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer formed on the substrate and including a Si-doped layer doped with Si as an uppermost layer thereof. The group III nitride semiconductor layer has a total thickness of not less than 4 μm and not more than 10 μm. The Si-doped layer includes a Si concentration gradient layer having a carrier concentration that gradually decreases toward an outermost surface thereof so as to be not less than 1×10 | 06-20-2013 |
20130153859 | SEMICONDUCTOR NANOPARTICLE ASSEMBLY - A semiconductor nanoparticle assembly including semiconductor nanoparticles having a core/shell structure, and wherein the semiconductor nanoparticles are bonded by means of amide bonds. | 06-20-2013 |
20130161585 | LIGHT EMITTING DEVICE - A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions. | 06-27-2013 |
20130161586 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The present invention provides a Group III nitride semiconductor light-emitting device which is intended to relax stress applied to a light-emitting layer. The light-emitting device includes an MQW layer, and an n-side superlattice layer formed below the MQW layer. The n-side superlattice layer is formed by repeatedly depositing layer units, each unit including an InGaN layer, a GaN layer, and an n-GaN layer which are sequentially deposited from the side of the sapphire substrate. In the n-side superlattice layer, an InGaN layer more proximal to the MQW layer has a higher In compositional proportion. The In compositional proportion of the InGaN layer (which is most proximal to the MQW layer) of the n-side superlattice layer is 70% to 100% of the In compositional proportion of the InGaN layer (which is most proximal to the n-side superlattice layer) of the MQW layer. | 06-27-2013 |
20130168636 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting diode is provided. The semiconductor light emitting diode comprises a metal electrode; an n-type cladding over the metal electrode, the n-type cladding comprising a pillar support part formed of an n-type semiconductor material, and a pillar part having a plurality of pillars formed of an n-type semiconductor material over the pillar support part; an active part conformally formed over the pillar part so as to enclose the pillar part and over the pillar support part between the pillar parts, the active part having a quantum well layer and a barrier layer stacked alternately; a p-type cladding conformally formed of a p-type semiconductor material over the active part; and a transparent electrode formed over the p-type cladding. | 07-04-2013 |
20130168637 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - A semiconductor light emitting element includes an n-type semiconductor layer containing n-type impurities, a light emitting layer stacked on the n-type semiconductor layer, and a p-type semiconductor layer stacked on the light emitting layer and containing p-type impurities. The light emitting layer includes three or more well layers, and four or more barrier layers composed of a group-III nitride semiconductor having a larger band gap than that of the well layers, and each of the three or more well layers is sandwiched from both sides by neighboring two of the barrier layers. The three or more well layers include plural n-side well layers each having a first thickness to emit light of a common wavelength, and one or plural p-side well layers each having a second thickness larger than the first thickness and having a different composition from the n-side well layers to emit light of the common wavelength. | 07-04-2013 |
20130168638 | NITRIDE-BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT EMITTING EFFICIENCY USING STRAIN BUFFER LAYER - The nitride-based light emitting device according to one embodiment includes a first nitride semiconductor layer doped with a first conductive impurity; a strain buffer layer formed on the first nitride semiconductor layer and comprised of InGaN; an active layer formed on the strain buffer layer and having a multi-quantum well structure in which a quantum-well layer and a quantum-barrier layer are alternately stacked one above another; and a second nitride semiconductor layer formed on the active layer and doped with a second conductive impurity opposite to the first conductive impurity, wherein the ratio B/A satisfies 1.4 | 07-04-2013 |
20130168639 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films. | 07-04-2013 |
20130175498 | LIGHT EMITTING DIODE - A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga-N bonds on the bottom surface has an N-face polarity. | 07-11-2013 |
20130181186 | INTEGRATION OF CURRENT BLOCKING LAYER AND n-GaN CONTACT DOPING BY IMPLANTATION - An improved method of fabricating a semiconductor light emitting diode (LED) is disclosed. The current blocking layer and the contact area for the n-type layer are implanted at the same time. In some embodiments, a dopant, which may be an n-type dopant, is implanted into a portion of the p-type layer to cause that portion to become either u-type or n-type. Simultaneously, the same dopant is implanted into at least a portion of the exposed n-type layer to increase its conductivity. After this implant, the dopant in both portions of the LED may be activated through the use of a single anneal cycle. | 07-18-2013 |
20130181187 | SEMICONDUCTOR LIGHT EMITTING DEVICE - In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape. | 07-18-2013 |
20130181188 | III NITRIDE EPITAXIAL SUBSTRATE AND DEEP ULTRAVIOLET LIGHT EMITTING DEVICE USING THE SAME - A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate | 07-18-2013 |
20130187124 | LIGHTING-EMITTING DEVICE WITH NANOSTRUCTURED LAYER AND METHOD FOR FABRICATING THE SAME - A light emitting device has a nanostructured layer with nanovoids. The nanostructured layer can be provided below and adjacent to active region or on a substrate or a template below an n-type layer for the active region, so as to reduce strain between epitaxial layers in the light emitting device. A method of manufacturing the same is provided. | 07-25-2013 |
20130187125 | GALLIUM-NITRIDE-BASED LIGHT EMITTING DIODES WITH MULTIPLE POTENTIAL BARRIERS - A light emitting diode (LED) includes an active layer having one or more multilayer potential barriers and at least one well layer. Each multilayer potential barrier includes interlacing first and second InAlGaN thin layers. The first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced. | 07-25-2013 |
20130187126 | Compositions, Devices and Methods for Optimizing Photosynthetically Active Radiation - Compositions, devices, and methods for optimizing photosynthetically active radiation by utilizing a composition comprising a quantum confinement material having an emission spectra of between 300 nm and 545 nm, and a quantum confinement material having an emission spectra of between 545 nm and 750 nm where the composition may be embedded in and/or coated on one or more transparent surfaces. | 07-25-2013 |
20130187127 | LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention provides a light-emitting element comprising: a carbon layer comprising a graphene; a plurality of fine structures having grown toward the upper side of the carbon layer; a thin film layer for coating the fine structures; and a light-emitting structure layer formed on the thin film layer. | 07-25-2013 |
20130187128 | LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention provides a light-emitting element comprising: a carbon layer comprising a graphene; a plurality of fine structures having grown toward the upper side of the carbon layer; and a light-emitting structure layer formed on the surface of the fine structures | 07-25-2013 |
20130193406 | LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - The present invention discloses an LED and its fabrication method. The LED comprises: a sapphire substrate; an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence; wherein a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer. The cone-shaped structures can increase the light reflected by the sapphire substrate, raising the external quantum efficiency of the LED, thus increasing the light utilization rate of the LED. Furthermore, the formation of a plurality of cone-shaped structures can improve the lattice matching between the sapphire substrate and other films, reducing the crystal defects in the film formed on the sapphire substrate, increasing the internal quantum efficiency of the LED. | 08-01-2013 |
20130193407 | NANOCRYSTALS INCLUDING A GROUP IIIA ELEMENT AND A GROUP VA ELEMENT, METHOD, COMPOSITION, DEVICE AND OTHER PRODUCTS - A population of nanocrystals including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material comprising at least three chemical elements and obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. Devices including nanocrystals are disclosed. | 08-01-2013 |
20130193408 | LIGHT-EMITTING DIODE FOR EMITTING ULTRAVIOLET LIGHT - An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance. | 08-01-2013 |
20130193409 | Deep Ultraviolet Light Emitting Diode - A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. | 08-01-2013 |
20130200334 | APPLICATION OF SEMICONDUCTOR QUANTUM DOT PHOSPHORS IN NANOPILLAR LIGHT EMITTING DIODES - A quantum well-based p-i-n light emitting diode is provided that includes nanopillars with an average linear dimension of between 50 nanometers and 1 micron. The nanopillars include a laminar layer of quantum wells capable of non-radiative energy transfer to quantum dot nanocrystals. Quantum dot-Quantum well coupling through the side walls of the nanopillar-configured LED structure achieves a close proximity between quantum wells and quantum dots while retaining the overlying contact electrode structures. A white LED with attractive properties relative to conventional incandescent and fluorescence lighting devices is produced. | 08-08-2013 |
20130200335 | LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device package. The light emitting device package comprises a body formed of a silicon-based material; an insulating layer having a first opening on a surface of the body; a first and second metal layers disposed on the insulating layer; a light emitting device having a plurality of compound semiconductor layers disposed on a top surface of the body and connected to the first and second metal layers; and a protection device disposed on the body and electrically connected to the light emitting device, wherein the insulating layer has a second opening on a bottom surface of the body, wherein a first portion of the first metal layer is connected to the protective device and is disposed in the second opening of the insulating layer. | 08-08-2013 |
20130207071 | LIGHT EMITTING DIODE ARRAY - A light emitting diode (LED) array includes a substrate with an array having a plurality of LED chips thereon, a dielectric layer, a plug, and a conductive connection layer. Each of the LED chips is isolated from another LED chip adjacent thereto by a trench. The dielectric layer covers a surface of the substrate exposed by the trench and sidewalls and partial surfaces of the LED chips adjacent to the trench. The plug fills the trench. The conductive connection layer is disposed over the plug and the dielectric layer to connect the LED chips with the LED chips adjacent thereto. Radiation emitted from one of the LED chips can be reflected by the dielectric layer and the plug, and finally reflected and output from a side of the LED chip not adjacent to the trench, thereby not affecting the adjacent LED chip and being absorbed by it. | 08-15-2013 |
20130207072 | OPTICAL STRUCTURE AND LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a light emitting unit, and a first optical structure. The light emitting unit is disposed on a top surface of the substrate. The first optical structure is disposed on the light emitting unit. The first optical structure includes a plurality of first nanostructures and a plurality of first quantum dot units. Each of the first quantum dot units is disposed in the first nanostructure. The light emitting unit is used to generate a first color light. Each of the first quantum dot units is used to be excited by the first color light to generate a second color light different from the first color light. | 08-15-2013 |
20130207073 | Quantum Dot White and Colored Light Emitting Devices - A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence. | 08-15-2013 |
20130207074 | LIGHT EMITTING DEVICE HAVING MGO PYRAMID STRUCTURE AND METHOD FOR FABRICATING THE SAME - A gallium nitride-based group III-V compound semiconductor light emitting device and a method for fabricating the same are provided. The gallium nitride-based group III-V compound semiconductor light emitting device includes: a substrate; a p-type ohmic electrode layer formed on the substrate; a p-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type ohmic electrode layer; an n-type gallium nitride-based group III-V compound semiconductor layer formed on the p-type gallium nitride-based group III-V compound semiconductor layer; an n-type ohmic electrode layer formed on the n-type gallium nitride-based group III-V compound semiconductor layer; and first and second refractive index adjustment layers having refractive index smaller than those of the n-type gallium nitride-based group III-V compound semiconductor layer and the n-type ohmic electrode layer, wherein a pyramid structure is formed on the surface of the second refractive index adjustment layer. | 08-15-2013 |
20130207075 | NANOSCALE EMITTERS WITH POLARIZATION GRADING - A nanowire comprises a polar semiconductor material that is compositionally graded along the nanowire from a first end to a second end to define a polarization doping profile along the nanowire from the first end to the second end. The polar semiconductor material may comprise a group IH-nitride semiconductor, such as an alloy of GaN and AlN, or an alloy of GaN and InN. Such nanowires may be formed by nucleating the first ends on a substrate, growing the nanowires by depositing polar semiconductor material on the nucleated first ends on a selected growth face, and compositionally grading the nanowires during growth to impart the polarization doping. The direction of the compositional grading may be reversed during the growing of the nanowires to reverse the type of the imparted polarization doping. In some embodiments, the reversing forms n/p or p/n junctions in the nanowires. | 08-15-2013 |
20130207076 | METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A group III nitride semiconductor light emitting device with a satisfactory ohmic contact is provided. The group III nitride semiconductor light emitting device includes a junction JC which tilts with respect to the reference plane that is orthogonal to a c-axis of a gallium nitride based semiconductor layer. An electrode forms the junction with the semipolar surface of the gallium nitride based semiconductor layer. The oxygen concentration of the grown gallium nitride based semiconductor layer that will form the junction JC is reduced. Since the electrode is in contact with the semipolar surface of the gallium nitride based semiconductor layer so as to form the junction, the metal-semiconductor junction has satisfactory ohmic characteristics. | 08-15-2013 |
20130207077 | METHODS FOR MAKING WATER SOLUBLE QUANTUM DOTS - A novel quantum dot containing two different metals at non-toxic levels which is capable of narrow bandwidth near infrared emissions at wavelengths of 600-1100 nm. The quantum dot is fabricated via an aqueous method which forms a structure having an inner region of one composition and an outer region of a different composition, wherein the inner region contains at least a first metal and the outer region contains at least a second metal. The quantum dots may be enabled for bioconjugation and may be used in a method for tissue imaging and analyte detection. | 08-15-2013 |
20130214245 | LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - The present invention discloses an LED and its fabrication method. The LED comprises: a substrate; an epitaxial layer, an active layer and a capping layer arranged on the substrate in sequence; wherein a plurality of microlens structures arc formed on the surface of the substrate away from the epitaxial layer, and a plurality of cams are formed on the surfaces of the microlens structures. When the light emitted from the active layer passes through the surfaces of the microlens structures or the surfaces of the cams, the incident angle is always smaller than the critical angle of total reflection, thus preventing total reflection and making sure that most of the light pass through the surfaces of the microlens structures and the cams, in this way improving external quantum efficiency of the LED, avoiding the rise of the internal temperature of the LED and improving the performance of the LED. | 08-22-2013 |
20130214246 | LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - An LED and its fabrication method are disclosed. The LED includes: a sapphire substrate ( | 08-22-2013 |
20130214247 | AC LED DEVICE AND ITS MANUFACTURING PROCESS FOR GENERAL LIGHTING APPLICATIONS - The present invention relates to a plurality of light emitting diodes connected in series to elevate the working voltage and to enable the devices to be connected directly to the AC voltage sources. The LED device has five pluralities of series-connected diodes. Four pluralities of series-connected diodes are arranged to at as a rectifier bridge so the fifth plurality of diodes is always forward biased and energized. The light emitting diodes in the device are arranged to accommodate various AC line voltages, diode operating voltages, and diode reverse breakdown voltages. The plurality of diodes was manufactured by first etching epitaxial layer to the insulating substrate to isolate individual diodes, and then use metal lines to interconnect them according to the layout design. The number of die-attach and wire-bonding steps used in the subsequent chip array and lamp manufacturing process is therefore greatly reduced or eliminated. This invention simplifies LED array and lamp process flow, lowers the manufacturing cost, improves product reliability and LED device efficacy. | 08-22-2013 |
20130214248 | SOLID STATE LIGHTING DEVICES WITH SEMI-POLAR FACETS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices with semi-polar or non-polar surfaces and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and an epitaxial silicon structure in direct contact with the substrate surface. The epitaxial silicon structure has a sidewall extending away from the substrate surface. The solid state lighting device also includes a semiconductor material on at least a portion of the sidewall of the epitaxial silicon structure. The semiconductor material has a semiconductor surface that is spaced apart from the substrate surface and is located on a semi-polar or non-polar crystal plane of the semiconductor material. | 08-22-2013 |
20130214249 | QUANTUM DOTS AND HOSTS - An electronic device comprising a quantum dot and an organic host, a mixture comprising a quantum dot and an organic host, a quantum dot, a method for preparing a quantum dot (QD), and a formulation including the mixture or the quantum dot are provided. | 08-22-2013 |
20130214250 | NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Al | 08-22-2013 |
20130214251 | SOLID STATE LIGHT EMITTING DEVICES BASED ON CRYSTALLOGRAPHICALLY RELAXED STRUCTURES - The present invention discloses a method for manufacturing a solid state light emitting device having a plurality of light-sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on the growth surface, the mask layer having a plurality of openings through which the growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than | 08-22-2013 |
20130221321 | LIGHT-EMITTING DIODE DEVICE - A light-emitting diode (LED) device includes a first LED, a second LED, and a superlattice structure by which the first and the second LEDs are stacked. The superlattice structure has an absorption spectra, the first active layer of the first LED has a first emission spectra, and the second active layer of the second LED has a second emission spectra. The absorption spectra is located on a shorter-wavelength side of at least one of the first and the second emission spectra. | 08-29-2013 |
20130221322 | Substrate with Buffer Layer for Oriented Nanowire Growth - The present invention provides a substrate ( | 08-29-2013 |
20130221323 | EFFICIENT AND DIRECTED NANO-LIGHT EMITTING DIODE, AND METHOD FOR MAKING SAME - The invention relates to light-emitting devices, and related components, systems and methods. In one aspect, the present invention is related to light emitting diode (LED) light extraction efficiency. A non-limiting example, the application teaches a method for improving light emitting diode (LED) extraction efficiency, by providing a nano-rod light emitting diode; providing quantum wells; and reducing the size of said nano-rod LED laterally in the quantum-well plane (x and y), thereby improving LED extraction efficiency. | 08-29-2013 |
20130221324 | SEMICONDUCTOR LIGHT EMITTING DIODE HAVING OHMIC ELECTRODE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - Embodiments of the invention provide a semiconductor light emitting diode having an ohmic electrode structure, and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting structure having an upper surface constituting an N-face; and an ohmic electrode structure located on the light emitting structure. Here, the ohmic electrode structure includes a lower diffusion preventing layer, a contact layer, an upper diffusion preventing layer, and an Al protective layer from the N-face of the light emitting structure. | 08-29-2013 |
20130221325 | TWO- AND THREE-TERMINAL MOLECULAR ELECTRONIC DEVICES WITH BALLISTIC ELECTRON TRANSPORT - Two- and three-terminal molecular electronic devices with ballistic electron transport are described. For example, a two-terminal molecular electronic device includes a conductor 1 layer/molecule 1 layer/conductor2 layer junction, wherein the total thickness of the molecule 1 layer and the conductor2 layer is less than or approximately equal to the mean free path of a charge carrier traveling in the two layers, and wherein ballistic transport can occur for some fraction of a plurality of charge carriers in the two layers. | 08-29-2013 |
20130221326 | High Bandgap III-V Alloys for High Efficiency Optoelectronics - High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al | 08-29-2013 |
20130228740 | LIGHT-EMITTING DIODE DEVICE - A light-emitting diode (LED) device includes at least one LED unit. Each LED unit includes at least one LED. Each LED includes an n-side nitride semiconductor layer, a p-side nitride semiconductor layer, and an active layer that is located between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer. The active layer is includes one or more well layers. At least one of the well layers has a multilayered structure. | 09-05-2013 |
20130228741 | LIGHT EMITTING DIODE - A light emitting diode including a sapphire substrate, a n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first and a second electrode is provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×10 | 09-05-2013 |
20130228742 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface. | 09-05-2013 |
20130228743 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The active layer is located between the n-type and p-type semiconductor layers, and includes multiple quantum barrier layers and quantum wells located between any two quantum barrier layers. A lattice constant of the quantum barrier layer closest to the p-type semiconductor layer is a | 09-05-2013 |
20130228744 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The light-emitting device includes a groove passing through a second semiconductor layer and a light-emitting layer to reach a first semiconductor layer; a first ohmic electrode in contact with the first semiconductor layer within the groove; a connection electrode passing through the first semiconductor layer from the surface thereof and electrically connected to the first ohmic electrode; an insulating layer for covering the second semiconductor layer on a surface thereof opposing the first semiconductor layer, the insulating layer having an opening; a second ohmic electrode in contact with the second semiconductor layer in the opening; a metal layer formed over the insulating layer, and connected to the second ohmic electrode; and a support bonded to the metal layer. | 09-05-2013 |
20130228745 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a first layer and a functional layer. The first layer is formed on an amorphous layer, includes aluminum nitride, and has a compressive strain or a tensile strain. The functional layer is formed on the first layer and includes a nitride semiconductor. | 09-05-2013 |
20130228746 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers. | 09-05-2013 |
20130228747 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses. | 09-05-2013 |
20130228748 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant. | 09-05-2013 |
20130234106 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer. | 09-12-2013 |
20130234107 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a nitride semiconductor light emitting device which includes forming an n-type semiconductor layer, forming an active layer on the n-type semiconductor layer, forming a superlattice layer by alternately stacking at least two nitride layers made of In | 09-12-2013 |
20130234108 | LIGHT EMITTING DIODES WITH LOW REFRACTIVE INDEX MATERIAL LAYERS TO REDUCE LIGHT GUIDING EFFECTS - Light emitting diodes including low refractive index layers for reducing guided light are disclosed. The light-emitting diodes include at least one n-doped layer, at least one p-doped layer, and an active region disposed between the at least one n-doped layer and the at least one p-doped layer. The active region comprises a light-emitting material. The light-emitting diode further comprises at least one low refractive index layer disposed in or around the active region. | 09-12-2013 |
20130234109 | Blue Emitting Semiconductor Nanocrystals And Compositions And Devices Including Same - A semiconductor nanocrystal capable of emitting blue light upon excitation. Also disclosed are devices, populations of semiconductor nanocrystals, and compositions including a semiconductor nanocrystal capable of emitting blue light upon excitation. In one embodiment, a semiconductor nanocrystal capable of emitting blue light including a maximum peak emission at a wavelength not greater than about 470 nm with a photoluminescence quantum efficiency greater than about 65% upon excitation. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting blue light with a photoluminescence quantum efficiency greater than about 65% upon excitation. In a further embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. | 09-12-2013 |
20130234110 | GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - A gallium nitride based compound semiconductor light-emitting element according to an embodiment of the present disclosure includes: an n-type gallium nitride based compound semiconductor layer; a p-type gallium nitride based compound semiconductor layer; and an active layer which is arranged between the n- and p-type gallium nitride based compound semiconductor layers. The active layer and the p-type gallium nitride based compound semiconductor layer are m-plane semiconductor layers. The p-type gallium nitride based compound semiconductor layer includes magnesium at a concentration of 2.0×10 | 09-12-2013 |
20130240831 | GROWING AN IMPROVED P-GAN LAYER OF AN LED THROUGH PRESSURE RAMPING - The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a vertical LED die in some embodiments. The LED die includes a substrate. A p-doped III-V compound layer and an n-doped III-V compound layer are each disposed over the substrate. A multiple quantum well (MQW) layer is disposed between the p-doped III-V compound layer and the n-doped III-V compound layer. The p-doped III-V compound layer includes a first region having a non-exponential doping concentration characteristic and a second region having an exponential doping concentration characteristic. In some embodiments, the second region is formed using a lower pressure than the first region. | 09-19-2013 |
20130240832 | INTEGRATION OF LED DRIVER CIRCUIT WITH LED - Various embodiments provide materials and methods for integrating exemplary heterostructure field-effect transistor (HFET) driver circuit or thyristor driver circuit with LED structures to reduce or eliminate resistance and/or inductance associated with their conventional connections. | 09-19-2013 |
20130240833 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate under a light emitting structure having an active layer. A bottom surface of the substrate includes a first portion and a second portion around the first portion, the first portion includes a first recess and the second portion includes a second recess, and the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate. The first recess and the second recess have a different depth from the bottom surface of the substrate, the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and the first recess and the second recess has a depth smaller than a thickness of the substrate. | 09-19-2013 |
20130240834 | METHOD FOR FABRICATING VERTICAL LIGHT EMITTING DIODE (VLED) DICE WITH WAVELENGTH CONVERSION LAYERS - A method for fabricating vertical light emitting diode (VLED) dice includes the steps of: forming a light emitting diode (LED) die having a multiple quantum well (MQW) layer configured to emit electromagnetic radiation in a first spectral region; forming a confinement layer on the multiple quantum well (MQW) layer; forming an adhesive layer on the confinement layer; and forming a wavelength conversion layer on the adhesive layer configured to convert the electromagnetic radiation in the first spectral region to output electromagnetic radiation in a second spectral region. | 09-19-2013 |
20130248816 | Light Emitting Diode (LED) Die Having Recessed Electrode And Light Extraction Structures And Method Of Fabrication - A light emitting diode (LED) die includes a semiconductor substrate having an n-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the n-type confinement layer configured to emit electromagnetic radiation, a p-type confinement layer in electrical contact with the multiple quantum well (MQW) layer; multiple light extraction structures on the n-type confinement layer configured to scatter the electromagnetic radiation; and an electrode in a recess embedded in the n-type confinement layer proximate to the light extraction structures. A method of fabrication includes: forming the semiconductor substrate; forming a recess in the n-type confinement layer having sidewalls and a planar bottom surface; forming an electrode in the recess comprising a conductive material conforming to the sidewalls and to the bottom surface of the recess; planarizing the electrode; and forming a plurality of light extraction structures in the n-type confinement layer proximate to the electrode. | 09-26-2013 |
20130248817 | WHITE LIGHT EMITTING DIODE - According to example embodiments, a white light-emitting diode may be configured to emit white light without a phosphor. According to example embodiments, a white light-emitting diode may include a first semiconductor layer that includes a plurality of hexagonal-pyramid shape nanostructures that protrude upwards from an upper surface of the first semiconductor layer, at least two multi-quantum well layers that are sequentially stacked on the hexagonal-pyramid shape nanostructures; and a second semiconductor layer on the multi-quantum well layers. The at least two multi-quantum well layers may be configured to generate lights having different wavelengths, and white light may be generated by mixing the lights having different wavelengths. | 09-26-2013 |
20130248818 | METHOD OF FABRICATING NONPOLAR GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, NONPOLAR SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME - A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N | 09-26-2013 |
20130248819 | LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, AND ILLUMINATION DEVICE - The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (In | 09-26-2013 |
20130256629 | GRAPHENE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, ORGANIC LIGHT EMITTING DISPLAY, AND MEMORY INCLUDING GRAPHENE SEMICONDUCTOR DEVICE - Graphene semiconductor device, a method of manufacturing a graphene semiconductor device, an organic light emitting display and a memory, include forming a multilayered member including a sacrificial substrate, a sacrificial layer, and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate, combining the first laminate and the second laminate such that the semiconductor layer contacts the graphene layer, and removing the transfer substrate. | 10-03-2013 |
20130256630 | NEAR UV LIGHT EMITTING DEVICE - Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of | 10-03-2013 |
20130256631 | ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION - Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs. | 10-03-2013 |
20130256632 | GROWTH SUBSTRATE AND LIGHT EMITTING DEVICE - Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing portions of the silicon substrate, a second buffer layer covering the first buffer layer and the exposed portions of the silicon substrate, wherein the second buffer layer is formed of a material causing a eutectic reaction with the silicon substrate, a third buffer layer disposed on the second buffer layer, and a light emitting structure disposed on the third buffer layer, and the second buffer layer includes voids. | 10-03-2013 |
20130256633 | SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL WITH INSULATOR COATING - Lighting apparatus including a light emitting diode and a plurality of semiconductor structures. Each semiconductor structure includes a quantum dot comprising a nanocrystalline core comprising a first semiconductor material and a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core, the quantum dot having a photoluminescence quantum yield (PLQY) of at least 90%. An insulator layer encapsulates the quantum dot. | 10-03-2013 |
20130264538 | LIGHT EMITTING LAMP - Disclosed is a light emitting lamp including a light source module including at least one light source and a light guide layer disposed on a substrate burying the at least one light source, and a housing accommodating the light source module, and the at least one light source includes a body having a cavity, a first lead frame including one end exposed to the cavity and the other end passing through the body and exposed to one surface of the body, a second lead frame including one end exposed to one portion of the surface of the body, the other end exposed to the another portion of the surface of the body, and an intermediate part exposed to the cavity, and at least one light emitting chip including a first semiconductor layer, an active layer and a second semiconductor layer, and disposed on the first lead frame. | 10-10-2013 |
20130264539 | Light-Emitting Diode with Current-Spreading Region - A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer. | 10-10-2013 |
20130264540 | FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES, AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes. | 10-10-2013 |
20130264541 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM WITH THE SAME - A light emitting device including a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a transparent conductive layer disposed on the light emitting structure, a metal filter having an irregular pattern disposed between the light emitting structure and the transparent conductive layer, and openings disposed between the irregular patterns in the metal filter. | 10-10-2013 |
20130270514 | LOW RESISTANCE BIDIRECTIONAL JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS - A light emitting diode device includes a first diode structure, a second diode structure on the first diode structure, and a conductive junction between the first diode structure and the second diode structure. The conductive junction includes a transparent conductive layer between the first diode structure and the second diode structure. Low resistance heterojunction tunnel junction structures including delta-doped layers are also disclosed. | 10-17-2013 |
20130270515 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electrode, and a second electrode. The n-type semiconductor layer is located between the substrate and the p-type semiconductor layer. The active layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is located between any two quantum barrier layers, and i is an integer greater than or equal to 2. The thickness of each of the quantum barrier layers counting from the p-type semiconductor layer is T | 10-17-2013 |
20130270516 | Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors - A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength. | 10-17-2013 |
20130270517 | SUPER LATTICE STRUCTURE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING SUPER LATTICE STRUCTURE, AND METHOD OF MAKING SUPER LATTICE STRUCTURE - A superlattice structure includes a plurality of quantum-dot nanowires extending in a substantially vertical direction from a plane region. The quantum-dot nanowires have a structure of barrier layers and quantum-dot layers alternately stacked on the plane region, and the quantum-dot nanowires are substantially the same in diameter in a stacking direction and substantially uniformly arranged at an area density of 4 nanowires/μm | 10-17-2013 |
20130270518 | SYSTEM FOR FREQUENCY CONVERSION, SEMICONDUCTING DEVICE AND METHOD FOR OPERATING AND MANUFACTURING THE SAME - The document describes an edge-emitting semiconductor component comprising a semiconductor substrate layer and semiconductor layers that are epitaxially grown onto the semiconductor substrate layer. The semiconductor include an active zone and a waveguide layer. The semiconductor component according to the invention is characterized in that the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength. | 10-17-2013 |
20130270519 | Non-Uniform Multiple Quantum Well Structure - A light emitting heterostructure including one or more fine structure regions is provided. The light emitting heterostructure can include a plurality of barriers alternating with a plurality of quantum wells. One or more of the barriers and/or quantum wells includes a fine structure region. The fine structure region includes a plurality of subscale features arranged in at least one of: a growth or a lateral direction. | 10-17-2013 |
20130270520 | LIGHT-EMITTING DEVICE - The present invention provides a light-emitting device manufactured with use of a compound semiconductor substrate comprising at least: a p-type cladding layer; a multiple-active layer portion in which three or more active layers made of (Al | 10-17-2013 |
20130277641 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FLIP CHIP PACKAGE DEVICE - A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided. | 10-24-2013 |
20130277642 | UV LED WITH TUNNEL-INJECTION LAYER - An ultraviolet (UV) light emitting structure, a UV light emitting device, and a method of making a UV light emitting structure or device, wherein the UV light emitting structure or device has an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layers and wherein the injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone. | 10-24-2013 |
20130277643 | QUANTUM DOT CONTAINING OPTICAL ELEMENT - An illumination device including a light source positioned at the distal end of a reflecting unit and a heat sink light transmissive substrate including quantum dots positioned at the proximal end of the reflecting unit with the reflecting unit having one or more reflecting side walls and a reflecting bottom wall and with the light source being separated a distance from the light transmissive substrate including quantum dots. In certain embodiments, the light source is an LED. | 10-24-2013 |
20130285010 | STACKED LED DEVICE WITH POSTS IN ADHESIVE LAYER - A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. The first doped layer includes a first dopant type and the second doped layer includes a second dopant type. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. One or more posts are located in the adhesive layer. | 10-31-2013 |
20130285011 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer. | 10-31-2013 |
20130285012 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode includes a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some region of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode. The method of manufacturing a light emitting diode includes forming a graphene layer on a second conductive semiconductor layer, forming a mask film on the graphene layer, forming a metal layer within the patterns of the mask film, followed by removing the mask film; and heat treating the metal layer to form a plurality of metal nanoparticles, whereby the metal nanoparticles having a high index of refraction are formed on some region of the graphene layer and provide surface texturing effects, thereby improving light emission efficiency. | 10-31-2013 |
20130285013 | COMPOUND SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide. | 10-31-2013 |
20130292636 | SOLID-STATE TRANSDUCER ASSEMBLIES WITH REMOTE CONVERTER MATERIAL FOR IMPROVED LIGHT EXTRACTION EFFICIENCY AND ASSOCIATED SYSTEMS AND METHODS - Solid state transducer (“SST”) assemblies with remote converter material and improved light extraction efficiency and associated systems and methods are disclosed herein. In one embodiment, an SST assembly has a front side from which emissions exit the SST assembly and a back side opposite the front side. The SST assembly can include a support substrate having a forward-facing surface directed generally toward the front side of the SST assembly and an SST structure carried by the support substrate. The SST structure can be configured to generate SST emissions. The SST assembly can further include a converter material spaced apart from the SST structure. The forward-facing surface and the converter material can be configured such that at least a portion of the SST emissions that exit the SST assembly at the front side do not pass completely through the converter material. | 11-07-2013 |
20130292637 | MULTI-QUANTUM WELL LED STRUCTURE WITH VARIED BARRIER LAYER COMPOSITION - A group III nitride-based light emitting device includes an n-type group III nitride-based semiconductor layer, a p-type group III nitride-based semiconductor layer, and a group III nitride-based active region between the p-type semiconductor layer and the n-type semiconductor layer. The active region includes a plurality of sequentially stacked group III nitride-based quantum well layers interspersed with barrier layers. A plurality of the barrier layers have a variation in composition of a first element along a growth direction within a thickness of each of the plurality of barrier layers, and the variation in composition of the first element has at least one minimum and a position of the minimum varies in the plurality of barrier layers. The first element may be indium or aluminium, and the number of barrier layers including the composition variation may be at least three barrier layers. The composition variation may vary linearly or non-linearly. | 11-07-2013 |
20130292638 | Superlattice Structure - A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation. | 11-07-2013 |
20130292639 | LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad. | 11-07-2013 |
20130292640 | LIGHT EMITTING DIODE AND FORMING METHOD THEREOF - A light emitting diode (LED) and a forming method thereof are provided. The method for forming the LED includes: providing a semiconductor substrate ( | 11-07-2013 |
20130292641 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type Al | 11-07-2013 |
20130292642 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes a substrate having a top surface and an bottom surface and a light emitting structure on the substrate, disposed closer to the substrate top surface than the substrate bottom surface, having an n-type conductive type semiconductor layer, a p-type conductive type semiconductor layer, and an active layer. The light emitting device also includes a transparent electrode layer, a first electrode, and a second electrode. The substrate has side surfaces extending from the substrate bottom surface to the substrate top surface, the side surfaces inclined outwardly as the substrate extends in a direction from the substrate bottom surface to the substrate top surface. The transparent electrode layer overlaps more than 50% of a total area of the substrate bottom surface, and a part of light generated by the light emitting structure is emitted to outside via the transparent electrode layer. | 11-07-2013 |
20130292643 | LIGHT-EMITTING DEVICE - A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode. | 11-07-2013 |
20130292644 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 11-07-2013 |
20130292645 | HIGH EFFICIENCY LIGHT EMITTING DIODE - Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×10 | 11-07-2013 |
20130299774 | LIGHT-EMITTING DIODE DEVICE AND A METHOD OF MANUFACTURING THE SAME - A light-emitting diode (LED) device includes at least one LED unit, each including a substrate; an electrical coupling layer deposited above the substrate; a parallel-connected epitaxial structure deposited above the electrical coupling layer; and an intermediate layer deposited between the electrical coupling layer and the parallel-connected epitaxial structure. In another embodiment, the parallel-connected epitaxial structure is deposited above a conductive layer; the electrical coupling layer is deposited above the parallel-connected epitaxial structure; and the intermediate layer is deposited between the parallel-connected epitaxial structure and the electrical coupling layer. | 11-14-2013 |
20130299775 | NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer. | 11-14-2013 |
20130299776 | HIGH OUTPUT POWER, HIGH EFFICIENCY BLUE LIGHT-EMITTING DIODES - A III-nitride based semipolar LED with a light output power of at least 100 milliwatts (mW), or with an External Quantum Efficiency (EQE) of at least 50%, for a current density of at least 100 Amps per centimeter square (A/cm | 11-14-2013 |
20130299777 | LIGHT-EMITTING DIODES WITH LOW TEMPERATURE DEPENDENCE - A III-nitride based LED with an External Quantum Efficiency (EQE) droop of less than 10% when a junction temperature of the LED is increased from 20 ° C. to at least 100 ° C. at a current density of the LED of at least 20 Amps per centimeter square. | 11-14-2013 |
20130299778 | Group III Nitride Semiconductor Light-Emitting Device Including a Superlatice Layer - A Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In | 11-14-2013 |
20130299779 | VERTICAL TOPOLOGY LIGHT EMITTING DEVICE - A vertical topology light emitting device comprises a support structure, a first adhesion layer, a second adhesion layer, a first metal layer, a second metal layer comprising a portion which directly contacts a GaN-based semiconductor structure, an interface layer, and a contact pad. | 11-14-2013 |
20130313514 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer. | 11-28-2013 |
20130313515 | LIGHT EMITTING DIODE WITH MULTIPLE QUANTUM WELL STRUCTURE - An exemplary light emitting diode includes a first type semiconductor layer, a second type semiconductor layer, and a multi quantum well layer sandwiched between the first and second type semiconductor layers. The multi quantum well layer includes a first barrier layer, a second barrier layer, two well layers sandwiched between the first and second barrier layers, and a third barrier layer sandwiched between the two well layers. The first and second barrier layers each have an energy level of conduction band higher than that of the third barrier layer. The first and second barrier layers each have an energy level of valence band higher than that of the third barrier layer. | 11-28-2013 |
20130313516 | LED LAMPS WITH IMPROVED QUALITY OF LIGHT - LED lamps having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm. | 11-28-2013 |
20130313517 | WHITE NANOLED WITHOUT REQUIRING COLOR CONVERSION - A nano-LED containing an array of nano-pillars of different diameters that are distributed over an emission area of an LED chip is capable of emitting broadband and white or nearly white light. Since each pillar emits light at a different wavelength according to its diameter and strain state, the overall emission spectral characteristics of the device is a combination of individual spectrum, giving rise to broadband emission. The spectral shape can be tailored for different shades of white emission, by controlling the distribution of the different diameter nano-pillars. The nano-pillars are patterned by nanosphere lithography. | 11-28-2013 |
20130313518 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes first and second conductivity-type semiconductor layers formed of Al | 11-28-2013 |
20130313519 | Series Connected Segmented LED - A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment. | 11-28-2013 |
20130320296 | LIGHT EMITTING DEVICE WITH QCSE-REVERSED AND QCSE-FREE MULTI QUANTUM WELL STRUCTURE - A light-emitting device comprises a semiconductor stacked structure, the semiconductor stacked structure comprising a p-type semiconductor layer, a n-type semiconductor layer and an multiple quantum well structure between the p-type semiconductor layer and the n-type semiconductor layer, wherein the multiple quantum well structure comprises a first multiple quantum well structure near the n-type semiconductor layer and a second multiple quantum well structure near the p-type semiconductor layer, wherein the first multiple quantum well structure has positive interface bound charge and the second multiple quantum well structure has zero interface bound charge. | 12-05-2013 |
20130320297 | LARGE EMISSION AREA LIGHT-EMITTING DEVICES - Light-emitting devices, and related components, systems and methods are disclosed. | 12-05-2013 |
20130320298 | SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL WITH INSULATOR COATING - A semiconductor structure comprises a nanocrystalline core of a first semiconductor material, a nanocrystalline shell of a second, different, semiconductor material at least partially surrounding the nanocrystalline core, and an insulator layer encapsulating the nanocrystalline shell and core, wherein an outer surface of the insulator layer is ligand-functionalized. | 12-05-2013 |
20130320299 | MONOLITHIC SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS OF MAKING THE SAME - A monolithic semiconductor light emitting device is described. The device includes an n-type region, a p-type region, an active region of a multiple quantum well structure comprising a plurality of alternating barrier and active layers interposed between the n-type region and the p-type region. The device emits multiple single-wavelength spectral distributions of ultraviolet light each having a peak wavelength of between 210 nm and 400 nm and/or a broadband spectral output having a wavelength of between 210 nm and 400 nm. Methods of making the device and lamps comprising the device are also described. | 12-05-2013 |
20130320300 | LIGHT-EMITTING DEVICES - Light-emitting devices are provided, the light-emitting devices include a light-emitting structure layer having a first conductive layer, a light-emitting layer and a second conductive layer sequentially stacked on a first of a substrate, a plurality of seed layer patterns formed apart each other in the first conductive layer; and a plurality of first electrodes formed through the substrate, wherein each of the first electrodes extends from a second side of the substrate to each of the seed layer patterns. | 12-05-2013 |
20130320301 | LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency. | 12-05-2013 |
20130328010 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A high brightness light-emitting diode free of p-type gallium nitride (GaN) layer is provided, which includes an n-type semiconductor layer, a multi-quantum well (MQW) layer, a p-type indium gallium nitride (InGaN) layer and an indium tin oxide (ITO) layer. The grain size of the ITO layer is ranging from 5 to 1000 angstroms. A method for manufacturing the high brightness light-emitting diode is also provided. | 12-12-2013 |
20130328011 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE - While maintaining unity of wavelength of light emitted from a semiconductor light emitting element, decrease of light emission efficiency with an increase in environmental temperature is suppressed. A semiconductor light-emitting element includes: an n-cladding layer; a light emitting layer laminated on the n-cladding layer; and a p-type semiconductor layer laminated on the light emitting layer. The light emitting layer includes a first barrier layer to an eighth barrier layer and a first well layer to a seventh well layer, and a single well layer is sandwiched by two barrier layers. The first well layer to the fifth well layer have a common standard well thickness and a common composition, and the sixth well layer and the seventh well layer are set at a maximum well thickness larger than the common standard well thickness and have a composition whose band gap energy is larger than that of the common composition. | 12-12-2013 |
20130328012 | LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS - A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED. | 12-12-2013 |
20130328013 | NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT - A nitride semiconductor ultraviolet light-emitting element is formed by laminating at least an n-type cladding layer configured of an n-type AlGaN semiconductor layer, an active layer including an AlGaN semiconductor layer having band gap energy of 3.4 eV or larger, and a p-type cladding layer configured of a p-type AlGaN semiconductor layer. A p-type contact layer configured of a p-type AlGaN semiconductor layer that absorbs ultraviolet light emitted from the active layer is formed on the p-type cladding layer. The p-type contact layer has an opening portion penetrating through to a surface of the p-type cladding layer. A p-electrode metal layer that makes Ohmic contact or non-rectifying contact with the p-type contact layer is formed on the p-type contact layer so as not to completely block the opening portion. A reflective metal layer for reflecting the ultraviolet light is formed at least on the opening portion and covers the surface of the p-type cladding layer that is exposed through the opening portion either directly or through a transparent insulating layer that allows the ultraviolet light to pass therethrough. | 12-12-2013 |
20130334492 | LIGHT RECEIVING ELEMENT AND OPTICAL DEVICE - A light-receiving element includes a III-V group compound semiconductor substrate, a light-receiving layer having a type II multi-quantum well structure disposed on the substrate, and a type I wavelength region reduction means for reducing light in a wavelength region of type I absorption in the type II multi-quantum well structure disposed on a light incident surface or between the light incident surface and the light-receiving layer. | 12-19-2013 |
20130334493 | SEMICONDUCTOR LIGHT EMITTING STRUCTURE - A semiconductor light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer and an active layer is provided. The active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer is a multi-quantum well structure consisting of well layers and barrier layers interlaced and stacked to each other. The well layers near the n-type semiconductor layer at least include a first well layer having a first thickness, and the well layers near the p-type semiconductor layer at least include a second well layer having a second thickness smaller than the first thickness, so that the ability to restrict electrons within the area of the active layer near the n-type semiconductor layer is increased, and the conversion efficiency of the active layer is enhanced. There is a differential Δd | 12-19-2013 |
20130341588 | QUANTUM ROD LIGHT-EMITTING DISPLAY DEVICE - A quantum rod light-emitting display device according to an embodiment of the invention includes a display panel including a first substrate, a second substrate opposite to the first substrate, and a quantum rod layer disposed between the first substrate and the second substrate, wherein quantum rods in the quantum rod layer are arranged in one direction; a backlight unit provided under the display panel and configured to provide light to the display panel; and a short-wavelength pass filter film formed between the display panel and the backlight unit, and configured to transmit the light having a predetermined wavelength range. | 12-26-2013 |
20130341589 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer. | 12-26-2013 |
20130341590 | Quantum Dot Narrow-Band Downconverters for High Efficiency LEDs - The present disclosure is directed to LED components, methods and systems using such components, having light emitter devices with emissions tuned to meet CRI and LER goal values at a defined CCT. These emitter devices and methods may use a combination of light emitting diodes and quantum dots to tune the emission to meet these criteria. The quantum dots may incorporate additional features to protect the quantum dots from environmental conditions and improve heat dissipation, such as coatings and thermally conductive features. | 12-26-2013 |
20130341591 | LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF - The present invention relates to a light emitting diode (LED) structure and a manufacturing method thereof. A first semiconductor stacking layer consisting of a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer and a second type light-guiding layer is sequentially formed on a semiconductor substrate. Partial of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the second type light-guiding layer is removed. A second semiconductor stacking layer consisting of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the second type light-guiding layer is defined in a light-emitting area. A transparent conductive layer is formed on a surface of the second type light-guiding layer of the second semiconductor stacking layer. | 12-26-2013 |
20130341592 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. | 12-26-2013 |
20130341593 | GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE - Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum. | 12-26-2013 |
20140001434 | LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF | 01-02-2014 |
20140001435 | ELECTROLUMINESCENT LIGHT SOURCE WITH HIGH LIGHT EMISSION INTENSITY | 01-02-2014 |
20140008608 | SEMICONDUCTOR LIGHT-EMITTING DEVICES INCLUDING CONTACT LAYERS TO FORM REFLECTIVE ELECTRODES - A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode. | 01-09-2014 |
20140008609 | LIGHT EMITTING DEVICE WITH NANOROD THEREIN AND THE FORMING METHOD THEREOF - A method of fabricating a light emitting device, comprising: providing a substrate; forming an undoped semiconductor layer on the substrate; forming a patterned metal layer on the undoped semiconductor layer; using the patterned metal layer as a mask to etch the undoped semiconductor layer and forming a plurality of nanorods on the substrate; and forming an light emitting stack on the plurality of nanorods to form a plurality of voids between the light emitting stack and the plurality of nanorods. | 01-09-2014 |
20140014894 | HIGH PERFORMANCE LIGHT EMITTING DIODE WITH VIAS - High performance light emitting diode with vias. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a plurality of filled vias configured to connect a doped region on one side of the light emitting diode to a plurality of contacts on the other side of the light emitting diode. The filled vias may comprise less that 10% of a surface area of the light emitting diode. | 01-16-2014 |
20140014895 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - According to one embodiment, a nitride-semiconductor light-emitting element includes a laminated body, a pair of two transparent conductive layers, a current-blocking layer, a first electrode, and a second electrode. The laminated body includes a nitride semiconductor, a first layer including a first conductivity-type layer, a second layer including a second conductivity-type layer, and a light-emitting layer sandwiched between the first layer and the second layer. The two transparent conductive layers are laterally separated from each other by a prescribed region. The prescribed region is a portion of a surface of the first layer. The current-blocking layer covers respective surfaces of the two transparent conductive layers. | 01-16-2014 |
20140014896 | LIGHT EMITTING DIODE DEVICE USING CHARGE ACCUMULATION AND METHOD OF MANUFACTURING THE SAME - A light emitting device using charge accumulation and a method of manufacturing the light emitting device are provided. The light emitting device includes a substrate, a first electrode formed on the substrate, a hole transport layer formed on the first electrode, an electron transport layer formed on the hole transport layer, and a second electrode formed on the electron transport layer. A thickness of the hole transport layer may be greater than 20 nm and a thickness of the electron transport layer may be greater than 40 nm. A quantum dot (QD) layer may be disposed between the hole transport layer and the electron transport layer. | 01-16-2014 |
20140014897 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH DOPED BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (AlN) and the buffer layer may include a doping layer. An n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer may be on the buffer layer. An n-side electrode may be on the n-type nitride semiconductor layer. A p-side electrode may be on the p-type nitride semiconductor layer. | 01-16-2014 |
20140014898 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer, and a intermediate refraction layer. The active layer is disposed on the second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed on the active layer. The intermediate refraction layer is disposed on the first conductive type semiconductor layer. The intermediate refraction layer has a refractivity that is smaller than that of the first conductive type semiconductor layer and is greater than that of air. | 01-16-2014 |
20140014899 | MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE HAVING THE SAME - A multi-quantum well structure includes two first barrier layers, two well layers sandwiched between the two first barrier layers, and a doped second barrier layer sandwiched between the two well layers. The second barrier layer has its conduction band and forbidden band gradually transiting to those of one of the well layers, and a dopant concentration of the second barrier layer gradually changes along a direction from one well layer to the other. The invention also relates to a light emitting diode structure having the multi-quantum well structure. | 01-16-2014 |
20140014900 | LIGHT EMITTING SOURCE AND METHOD FOR EMITTING LIGHT BASED ON BORON NITRIDE NANOTUBES - The present invention relates to a source for emitting broad spectrum light of controllable frequency comprising boron nitride nanotubes with defects caused by the vacancy of a boron atom in the tubular structure and wherein the source is further provided with means for producing an electric field perpendicular to the tube. The invention can be used as a field-effect transistor (by adding electrodes) or as a source for converting energy of an incoming beam. | 01-16-2014 |
20140014901 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer and a third semiconductor stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes. | 01-16-2014 |
20140021440 | LIGHTING DEVICE INCLUDING QUANTUM DOTS - A lighting device including an emissive material comprising quantum dots and a liquid medium disposed within a sealed container with at least a portion of a light guiding member disposed within the sealed container. Products including a lighting device in accordance with the invention are also disclosed. | 01-23-2014 |
20140021441 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting device includes: a stacked structure unit including first and second semiconductor layers and a light emitting layer between the first and second semiconductor layers; a first electrode on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film on the second semiconductor layer and a second film on a rim of the first film. The first film has a relatively lower contact resistance with the second semiconductor layer, compared to the second film. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface. | 01-23-2014 |
20140021442 | NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT - An active layer including an AlGaN semiconductor layer having a band gap energy of 3.4 eV or higher and a p-type cladding layer configured of a p-type AlGaN semiconductor layer and located above the active layer are formed in a first region on the n-type cladding layer, the first region being in a plane parallel to a surface of the n-cladding layer configured of an n-type AlGaN semiconductor layer. An n-electrode metal layer making Ohmic contact with the n-type cladding layer is formed on an adjacent region to the first region in a second region which is a region other than the first region on the n-type cladding layer. A first reflective metal layer reflecting ultraviolet light emitted from the active layer is formed on a surface of the n-type cladding layer in the second region other than the adjacent region. The n-electrode metal layer is arranged between the first region and a region in which the first reflective metal layer contacts the surface of the n-type cladding layer. | 01-23-2014 |
20140027709 | METHOD AND STRUCTURE FOR RECEIVING A MICRO DEVICE - A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material. | 01-30-2014 |
20140027710 | QUANTUM DOT AND NANOWIRE SYNTHESIS - A self-assembled semiconductor nanostructure includes a core and a shell, wherein one of the core or the shell is rich in a strained component and the other of the core or the shell is rich in an unstrained component, wherein the nanostructure is a quantum dot or a nanowire. A method includes growing a semiconductor alloy structure on a substrate using a growth mode that produces a semiconductor alloy structure having a self-assembled core and shell and allowing the structure to equilibrate such that one of the core or the shell is strained and the other is unstrained. Another method includes growing at least one semiconductor alloy nanostructures on a substrate, wherein the nanostructure comprises a strained component and an unstrained component, and controlling a compositional profile during said growing such that a transition between the strained component and an unstrained component is substantially continuous. | 01-30-2014 |
20140027711 | QUANTUM DOTS, METHOD, AND DEVICES - A quantum dot including a fluorine-containing ligand attached to a surface thereof and having a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot. A method for preparing a quantum dot with a coating comprising a fluoropolymer over at least a portion of the outer surface of the quantum dot is also disclosed. The method comprises contacting a quantum dot having a fluorine-containing ligand attached to a surface thereof with a fluoropolymer to coat the fluoropolymer over at least a portion of the outer surface of the quantum dot. A device including the quantum dot taught herein is further disclosed. An emissive material including the quantum dot taught herein is further disclosed. | 01-30-2014 |
20140027712 | DEVICES INCLUDING QUANTUM DOTS AND METHOD - A method for preparing a device, the method comprising: forming a first device layer over a first electrode, the layer comprising a metal oxide formed from a sol-gel composition that does not generate acidic by-products, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after formation of the first device layer. Also disclosed is a device comprising a first device layer formed over a first electrode, the first device layer comprising a metal oxide formed by sol-gel processing that does not include acidic by-products, a second electrode over the first device layer, and a layer comprising quantum dots disposed between the first device layer and one of the two electrodes. A device prepared by the method is also disclosed. | 01-30-2014 |
20140027713 | DEVICE INCLUDING QUANTUM DOTS - A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof; treating the surface of the deposited layer comprising quantum dots to remove the exposed ligands; and forming a device layer thereover. Also disclosed is a device made in accordance with the disclosed method. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, and a layer comprising quantum dots between the two electrodes, the layer comprising quantum dots deposited from a dispersion that have been treated to remove exposed ligands after formation of the layer in the device. Another aspect of the invention relates to a device comprising a first electrode and a second electrode, a layer comprising a first inorganic semiconductor material disposed between the first and second electrodes, and a plurality of quantum dots disposed between the first and second electrodes, the outer surface of the quantum dots comprising a second inorganic semiconductor material, wherein the composition of the first inorganic semiconductor material and the second inorganic semiconductor material is the same (without regard to any ligands on the outer surface of the quantum dot). | 01-30-2014 |
20140034900 | WAVELENGTH CONVERTING MATERIAL - A wavelength converting material comprising a phosphate compound have a chemical formula of AB | 02-06-2014 |
20140034901 | WHITE LIGHT EMITTING DIODE PACKAGE - Disclosed is a light emitting diode package having a simplified configuration and high color reproducibility. The light emitting diode package includes a package body, first and second light emitting diode chips received in the package body, a lead frame electrically connected to the first and second light emitting diode chips, the lead frame serving to adjust color of light according to the ratio of current of the first and second light emitting diode chips, and a light conversion layer configured to cover the first and second light emitting diode chips, the light conversion layer serving to convert light emitted from the first and second light emitting diode chips into a particular wavelength of light so as to emit a desired wavelength of light. | 02-06-2014 |
20140034902 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. The active layer includes (T+1) barrier layers, T well layers between the (T+1) barrier layers, and a first dummy layer between N well layers adjacent to the second conductive semiconductor layer and N barrier layers adjacent to the N well layers, in which T>N≧1. | 02-06-2014 |
20140034903 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device and a light emitting device package. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the active layer includes: a plurality of barrier layers; and a plurality of well layers between the barrier layers, and wherein at least two of the barrier layers have different energy bandpgaps and have different thicknesses. | 02-06-2014 |
20140034904 | LIGHT-EMITTING DEVICE - A light-emitting device has a first light-emitting structure a second light-emitting structure on a top surface of the first light-emitting structure, an insulation layer between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and a first electrode contacted with the second conductive type semiconductor layer and the third conductive type semiconductor layer. The first electrode contacts the insulation layer and the first electrode has a thickness thicker than that of the insulating layer. | 02-06-2014 |
20140042387 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles. | 02-13-2014 |
20140042388 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer; a second semiconductor layer; and a light emitting layer provided between the first and the second semiconductor layers. The first semiconductor layer includes a nitride semiconductor, and is of an n-type. The second semiconductor layer includes a nitride semiconductor, and is of a p-type. The light emitting layer includes: a first well layer; a second well layer provided between the first well layer and the second semiconductor layer; a first barrier layer provided between the first and the second well layers; and a first Al containing layer contacting the second well layer between the first barrier layer and the second well layer and containing layer containing Al | 02-13-2014 |
20140042389 | LIGHT EMITTING ELEMENT AND OPTICAL DEVICE - An active layer having a type 2 multi-quantum well structure includes a plurality of pair thickness groups having different thicknesses, including a first pair thickness group and a second pair thickness group. The first pair thickness group g | 02-13-2014 |
20140048766 | METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE USING BOND PAD DAM AND WAVELENGTH CONVERSION LAYERS - A method for fabricating light emitting diode (LED) dice includes the step of forming a light emitting diode (LED) die having a multiple quantum well (MQW) layer configured to emit electromagnetic radiation, and a confinement layer on the multiple quantum well (MQW) layer having a wire bond pad. The method also includes the steps of forming a dam on the wire bond pad configured to protect a wire bond area on the wire bond pad, forming an adhesive layer on the confinement layer and the wire bond pad with the dam protecting the wire bond area, and forming a wavelength conversion layer on the adhesive layer. A light emitting diode (LED) die includes the dam on the wire bond pad, the adhesive layer on the confinement layer and the wavelength conversion layer on the adhesive layer configured to convert the electromagnetic radiation to a second spectral region. | 02-20-2014 |
20140048767 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a p-type cladding layer containing p-type impurities and laminated on the light emitting layer. The light emitting layer has a barrier layer including first to fifth barrier layers and a well layer including first to fourth well layers, and has a multiple quantum well structure to sandwich one well layer by two barrier layers. The light emitting layer is configured such that the first to fourth well layers are set to have a composition to emit green light, and the first barrier layer is doped with n-type impurities, whereas the other barrier layers are not doped with n-type impurities. | 02-20-2014 |
20140048768 | LIGHT-EMITTING DEVICE - A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb. | 02-20-2014 |
20140048769 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 02-20-2014 |
20140048770 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL - According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 | 02-20-2014 |
20140048771 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LIGHT SOURCE - A nitride semiconductor light-emitting element uses a non-polar plane as its growing plane. A GaN/InGaN multi-quantum well active layer includes an Si-doped layer which is arranged in an In | 02-20-2014 |
20140054541 | METHOD OF MANUFACTURING QUANTUM DOT DEVICE, QUANTUM DOT DEVICE MANUFACTURED BY USING THE METHOD, AND METHOD OF MEASURING ELECTRON MOBILITY OF QUANTUM DOT DEVICE - A method of manufacturing a quantum dot (QD) device includes: forming a first QD solution obtained by dispersing a plurality of QDs in a mixture of a solvent and an anti-solvent; and forming a first QD layer on a substrate structure by applying the first QD solution onto the substrate structure and naturally evaporating the first QD solution. | 02-27-2014 |
20140054542 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer. | 02-27-2014 |
20140054543 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A first electrode is coupled to the first conductive semiconductor layer, and a second electrode is coupled to the second conductive semiconductor layer. A channel layer is provided around a lower portion of the light emitting structure. A first conductive support member is coupled to the second electrode and disposed adjacent to the second electrode. A second conductive support member is electrically insulated from the first conductive support member and disposed adjacent to the second electrode. A first connection part is coupled to the first electrode and the second conductive support member. | 02-27-2014 |
20140054544 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a light emitting structure including at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, an electrode layer on the light emitting structure, and a contact layer between the light emitting structure and the electrode layer and including a nitride semiconductor layer. | 02-27-2014 |
20140061584 | DEVICES AND METHODS - A device comprising an arrangement of device materials and a layer comprising a material with heat-dissipating properties disposed over at least a portion thereof is disclosed. The device can further include an interleave layer disposed between the top surface of the arrangement of device materials and the layer comprising a material with heat-dissipating properties. A barrier layer may further be included between the arrangement of device materials and the layer comprising a material with heat-dissipating properties. Methods are also disclosed. In certain embodiments, a device includes quantum confined semiconductor nanoparticles. | 03-06-2014 |
20140061585 | LIGHT EMITTING DIODE - The present invention provides a light emitting diode, which comprises a first LED die and a second LED die, each die comprising a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers, wherein the first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die so as to form a serially connected structure whereby the consuming current and heat generation of the light emitting diode are lowered so that the size of heat dissipating device for the light emitting diode can be reduced and illumination of the light emitting diode can be enhanced. | 03-06-2014 |
20140061586 | Nitride Nanowires and Method of Producing Such - The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor. | 03-06-2014 |
20140070164 | LIGHT EMITTING DIODE - The present invention provides a light emitting diode, which comprises a first LED die, a second LED die, and a dummy LED die, wherein the second LED die is disposed between the first LED die and the dummy LED die, and each die comprises a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers. The first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die, and the first semi-conductive layer of the second LED die is coupled to the first and second semi-conductive layers of the dummy LED die. | 03-13-2014 |
20140070165 | LIGHT EMITTING DEVICE - The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including Al | 03-13-2014 |
20140070166 | EPITAXIAL FORMATION STRUCTURES AND ASSOCIATED METHODS OF MANUFACTURING SOLID STATE LIGHTING DEVICES - Epitaxial formation structures and associated methods of manufacturing solid state lighting (“SSL”) devices with target thermal expansion characteristics are disclosed herein. In one embodiment, an SSL device includes a composite structure having a composite CTE temperature dependency, a formation structure on the composite structure, and an SSL structure on the formation structure. The SSL structure has an SSL temperature dependency, and a difference between the composite CTE and SSL temperature dependencies is below 3 ppm/° C. over the temperature range. | 03-13-2014 |
20140077152 | III-V Group Compound Devices with Improved Efficiency and Droop Rate - The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer. | 03-20-2014 |
20140077153 | Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate - The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer. | 03-20-2014 |
20140077154 | Semiconductor Material Doping - A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s). | 03-20-2014 |
20140077155 | LED ARRAY - An LED array includes a substrate and a semiconductor structure layer provided on the substrate. The semiconductor structure layer includes a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer. The semiconductor structure layer is partitioned into a plurality of light emitting sections by grooves formed in the semiconductor structure layer. Each groove is defined by two opposite side faces of adjacent light emitting sections. Each side face has a recessed and protruding configuration. In one embodiment, the protrusions and recesses of one side face of one light emitting section fit in respective recesses and protrusions of a corresponding side face of an adjacent light emitting section. | 03-20-2014 |
20140077156 | IN-SERIES ELECTRICAL CONNECTION OF LIGHT-EMITTING NANOWIRES - An optoelectronic device includes at least first and second light-emitting nanowires on a support, each comprising an area for the injection of holes and an area for the injection of electrons, a series electric connection including a connection nanowire on the support, which includes a first region forming an electric path with the hole injection area of the first nanowire, a second region forming an electric path with the electron injection area of the second nanowire, and a third region enabling a current to flow between first and second regions. Also included are a first conductive area connecting the hole injection area of the first nanowire and the first region of the connection nanowire and electrically insulated from the second nanowire, and a second conductive area connecting the second region of the connection nanowire and electron injection area of the second nanowire and electrically insulated from the first nanowire. | 03-20-2014 |
20140077157 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×10 | 03-20-2014 |
20140077158 | Light Emitting Diode (LED) using Three-Dimensional Gallium Nitride (GaN) Pillar Structures - A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer. | 03-20-2014 |
20140077159 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 03-20-2014 |
20140084240 | MICRO DEVICE STABILIZATION POST - A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface. | 03-27-2014 |
20140084241 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - The invention provides a Group III nitride semiconductor light-emitting device in which the strain in the light-emitting layer is relaxed, thereby attaining high light emission efficiency, and a method for producing the device. The light-emitting device of the present invention has a substrate, a low-temperature buffer layer, an n-type contact layer, a first ESD layer, a second ESD layer, an n-side superlattice layer, a light-emitting layer, a p-side superlattice layer, a p-type contact layer, an n-type electrode N | 03-27-2014 |
20140084242 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a Group III nitride semiconductor light-emitting device which exhibits improved light emission efficiency. The light-emitting layer has a MQW structure in which a plurality of layer units are repeatedly deposited, each layer unit comprising a well layer, a capping layer, and a barrier layer sequentially deposited. The well layer is formed of InGaN, the capping layer has a structure in which a GaN layer and an AlGaN layer are deposited in this order on the well layer, and the barrier layer is formed of AlGaN. The AlGaN layer has a higher Al composition ratio than that of the barrier layer. The AlGaN layer in the former portion has a lower Al composition ratio than that of the AlGaN layer in the latter portion when the light-emitting layer is divided into a former portion at the n-cladding layer side and a latter portion at the p-cladding layer side in a thickness direction. | 03-27-2014 |
20140084243 | LIGHT EMITTING DIODE WITH THREE-DIMENSIONAL NANO-STRUCTURES - A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and a surface of the active layer, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 03-27-2014 |
20140084244 | Wafer Level Photonic Device Die Structure and Method of Making the Same - A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality of bonding pads on a side of the carrier structure distal the epi structure, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL). The vertical LED device further includes a first insulating film on a side of the carrier structure proximal the epi structure and a second insulating film on a side of the carrier structure distal the epi structure. | 03-27-2014 |
20140091275 | Quantum Dot Light Enhancement Substrate - A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein. | 04-03-2014 |
20140091276 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on the substrate, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 04-03-2014 |
20140091277 | LIGHT EMITTING DIODE HAVING VERTICAL TOPOLOGY AND METHOD OF MAKING THE SAME - An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate. | 04-03-2014 |
20140097401 | SEMICONDUCTOR STRUCTURE FOR EMITTING LIGHT, AND METHOD FOR MANUFACTURING SUCH A STRUCTURE - A semiconductor structure for emitting light including a substrate made of a first semi-conductor material having a first type of conductivity, a first electrical contact, a second semiconductor material, having a second type of conductivity to form a junction, a second electrical contact contacting the second semiconductor material, a polarizer configured to polarize at least one portion of the semiconductor structure, and a plurality of micro- or nano-structures each including a first end connected to the substrate. Each micro- or nano-structure includes at least one portion made from the second semiconductor material, or each micro- or nano-structure having the first type of conductivity, a second end contacting the second semiconductor material to form the junction. | 04-10-2014 |
20140103289 | HIGH EFFICIENCY ULTRAVIOLET LIGHT EMITTING DIODE WITH BAND STRUCTURE POTENTIAL FLUCTUATIONS - A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the formation of band structure potential fluctuations that improve the efficiency of radiative recombination and increase light generation of optoelectronic devices, in particular ultraviolet light emitting diodes, made using the method. Several improvements in UV LED design and performance are also provided for use together with the excess Ga growth method. Devices made with the method can be used for water purification, surface sterilization, communications, and data storage and retrieval. | 04-17-2014 |
20140103290 | LIGHT-EMITTING DEVICE - A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the light-emitting layer; and a second electron blocking layer formed between the second semiconductor layer and the light-emitting layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer. | 04-17-2014 |
20140103291 | Inverted Light-Emitting Diode Having Plasmonically Enhanced Emission - An LED device having plasmonically enhanced emission is provided. The device includes an inverted LED structure with a coating of metal nanoparticles on the surface chosen to match the plasmonic response to the peak emission from the active quantum well (QW) emission region of the LED. The active QW emission region is separated from the metal nanoparticles on the surface by a thin n-type contact layer disposed on a top side of the active QW emission. A p-type layer is disposed immediately beneath the active QW emission region and injects holes into the active QW emission region. The n-type contact layer is sufficiently thin to permit a coupling of the surface plasmons (SPs) from the metal nanoparticles and the excitons in the active QW emission region. The SP-exciton coupling provides an alternative decay route for the excitons and thus enhances the photon emission from the LED device. | 04-17-2014 |
20140103292 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND LIGHT SOURCE APPARATUS USING THE DEVICE - A gallium nitride-based compound semiconductor light-emitting device formed of nitride semiconductor expressed by a general expression Al | 04-17-2014 |
20140103293 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A group III nitride semiconductor light-emitting element provided with: a semiconductor layer obtained by laminating a first semiconductor layer of a first conduction type, a light-emitting layer, and a second semiconductor layer of an opposite second conduction type; a first electrode connected to the first semiconductor layer; and a second electrode provided on the surface of the second semiconductor layer; the light-emitting layer including a first gallium indium nitride layer of a first indium composition, disposed on a side opposite the light extraction direction; a second gallium indium nitride layer of a second indium composition less than the first, disposed on the light extraction direction side from the first gallium indium nitride layer; and an intermediate layer containing a material of a smaller lattice constant than the materials constituting the first and second gallium indium nitride layers, provided between the first and second gallium indium nitride layers. | 04-17-2014 |
20140110663 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - A light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. The nano-structure includes a graphene layer provided under the first semiconductor layer to make contact with the first semiconductor layer; and a plurality of nano-textures extending from a top surface of the graphene layer to the first semiconductor layer and in contact with the first semiconductor layer. | 04-24-2014 |
20140110664 | III-NITRIDE QUANTUM WELL STRUCTURE, A METHOD FOR PRODUCING THE SAME, AND A LIGHT-EMITTING UNIT USING THE SAME - An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed. | 04-24-2014 |
20140110665 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - The embodiments of the present invention relate to a light emitting diode and manufacturing method thereof. The electroluminescent layer of the light-emitting diode is formed of graphene/compound semiconductor quantum dot composites. | 04-24-2014 |
20140110666 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation. | 04-24-2014 |
20140110667 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 04-24-2014 |
20140117306 | Light Emitting Device - A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer. | 05-01-2014 |
20140117307 | Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same - A method for treating a LED structure with a substance, the LED structure includes an array of nanowires on a planar support. The method includes producing the substance at a source and causing it to move to the array along a line. The angle between the line followed by the substance and the plane of the support is less than 90° when measured from the center of the support. The substance is capable of rendering a portion of the nanowires nonconductive or less conductive compared to before being treated by the substance. | 05-01-2014 |
20140117308 | Electronic Device Containing Nanowire(s), Equipped with a Transition Metal Buffer Layer, Process for Growing at Least One Nanowire, and Process for Manufacturing a Device - The electronic device comprises a substrate ( | 05-01-2014 |
20140117309 | CRYSTAL GROWTH METHOD AND SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes Ga | 05-01-2014 |
20140117310 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer. | 05-01-2014 |
20140124730 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE ARRAY - A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer. | 05-08-2014 |
20140124731 | LIGHT EMITTING DEVICE - A light emitting structure includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A plurality of first electrodes is provided on the first conductive semiconductor layer, and a second electrode electrically connects to the second conductive semiconductor layer. A conductive support member is provided under the second electrode, and a plurality of first connection parts is coupled the first electrodes to the conductive support member, respectively. A second connection part is coupled to the second electrode. The first electrodes are spaced apart from each other on a top surface of the first conductive semiconductor layer. | 05-08-2014 |
20140124732 | NANO-STRUCTURED LIGHT-EMITTING DEVICE AND METHODS FOR MANUFACTURING THE SAME - A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer. | 05-08-2014 |
20140124733 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS - Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (Al | 05-08-2014 |
20140124734 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device includes: a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped or unintentionally-doped AlGaN based layer formed between the first semiconductor structure and the semiconductor buffer structure. | 05-08-2014 |
20140124735 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains In | 05-08-2014 |
20140131656 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode chip includes a sapphire substrate and a plurality of carbon nano-tubes arranged on an upper surface of the sapphire substrate. Gaps are formed between two adjacent carbon nano-tubes to expose parts of the upper surface of the sapphire substrate. An un-doped GaN layer is formed on the exposed parts of the upper surface of the sapphire substrate and covers the carbon nano-tubes. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the un-doped GaN layer in sequence. A method for manufacturing the light emitting diode chip is also provided. | 05-15-2014 |
20140131657 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a plurality of light emitting cells separated from each other and disposed on the substrate, and a plurality of conductive interconnection layers electrically connecting two neighboring light emitting cells. Each light emitting cell includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a first electrode, a second electrode, and an etching area. The light emitting structure further includes a first side surface and a second side surface, and if a width between the first side surface and the second side surface is defined as W, the second electrode is disposed in an area between a position separated from the first side surface by ⅕ W and a position separated from the first side surface of the light emitting structure by ½ W. | 05-15-2014 |
20140131658 | LED THAT HAS BOUNDING SILICON-DOPED REGIONS ON EITHER SIDE OF A STRAIN RELEASE LAYER - A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second relatively-highly silicon-doped region. The second relatively-highly silicon-doped region is a sublayer of the active layer of the LED. The first relatively-highly silicon-doped region is a sublayer of the N-type layer of the LED. The first relatively-highly silicon-doped region is also separated from the remainder of the N-type layer by an intervening sublayer that is only lightly doped with silicon. The silicon doping profile promotes current spreading and high output power (lumens/watt). The LED has a low reverse leakage current and a high ESD breakdown voltage. The strain release layer has a concentration of indium that is between 5×10 | 05-15-2014 |
20140138613 | LIGHT EMITTING DIODE HAVING HETEROGENEOUS PROTRUSION STRUCTURES - An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency. | 05-22-2014 |
20140138614 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; a light emitting layer; a conductive metal layer; and a first stress application layer. The first semiconductor layer contains a nitride semiconductor crystal and receives tensile stress in a (0001) plane. The second semiconductor layer contains a nitride semiconductor crystal. The light emitting layer has an average lattice constant larger than a lattice constant of the first semiconductor layer. The conductive metal layer has a thermal expansion coefficient larger than a thermal expansion coefficient of a nitride semiconductor crystal. The first stress application layer is provided between the second semiconductor layer and the light emitting layer. The first stress application layer relaxes tensile stress applied from the metal layer to the second semiconductor layer. | 05-22-2014 |
20140138615 | LIGHT EMITTING DIODE - An LED includes a base and an LED die grown on the base. The LED die includes two spaced electrodes and two exposed semiconductor layers. The two electrodes are respectively formed on top surfaces of the two semiconductor layers. At least one of the electrodes extends downwardly from the top surface of the corresponding semiconductor layer along a lateral edge of the LED die to electrically connect an exterior electrode via transparent conducting resin. | 05-22-2014 |
20140138616 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from Al | 05-22-2014 |
20140138617 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of Al | 05-22-2014 |
20140138618 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a light emitting layer disposed between a n-type semiconductor layer and a p-type semiconductor layer, and a hole supply layer disposed between the light emitting layer and the p-type semiconductor layer. The hole supply layer is made from material In | 05-22-2014 |
20140138619 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than | 05-22-2014 |
20140138620 | Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same - A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires. | 05-22-2014 |
20140138621 | GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - A light emitting device including a substrate, a first conductive type semiconductor layer on the substrate, at least one In | 05-22-2014 |
20140145144 | QUANTUM ROD AND METHOD OF FABRICATING THE SAME - A quantum rod includes a core of ZnS semiconductor particle having a rod shape; and a transition metal with which the core is doped and which is biased at one side of a length direction of the core. | 05-29-2014 |
20140145145 | LIGHT EMITTING DEVICE USING GRAPHENE QUANTUM DOT AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - The present disclosure relates to a light emitting device using a graphene quantum dot, and an organic light emitting device including the same. | 05-29-2014 |
20140145146 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer. | 05-29-2014 |
20140151632 | GAN-BASED VERTICAL STRUCTURE LED APPLYING GRAPHENE FILM CURRENT EXPANSION LAYER - The present invention discloses A graphene film electrical current spreading layer applied GaN-based LED in vertical. structure, comprising: a p-type metal electrode including a metal support substrate and a metal reflective mirror formed on the metal support substrate; a hole injecting layer formed on the metal reflective mirror of the p-type metal electrode; an electron blocking layer formed on the hole injecting layer; a lighting layer formed on the electron blocking layer; an electron limiting layer formed on the lighting layer; an electron injecting layer formed on the electron limiting layer; an electrical current spreading layer formed on the electron injecting layer; two n-type metal electrodes formed on the electrical spreading layer and covering a part of the electrical current spreading layer. | 06-05-2014 |
20140151633 | LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME - An exemplary embodiment of the present invention discloses a light-emitting diode (LED) chip including a semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first electrode disposed on the semiconductor stacked structure, a wavelength converting layer disposed on the semiconductor stacked structure, and a transparent resin disposed on the wavelength converting layer. | 06-05-2014 |
20140151634 | LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES - A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device. | 06-05-2014 |
20140151635 | METHOD FOR FABRICATING A LIGHT EMITTING DIODE (LED) DIE HAVING PROTECTIVE SUBSTRATE - A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure. | 06-05-2014 |
20140158977 | NEAR-INFRARED LIGHT EMITTING DEVICE USING SEMICONDUCTOR NANOCRYSTALS - A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 μm. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core. | 06-12-2014 |
20140158978 | Semiconductor Light-Emitting Element and Laminate Containing Same - A semiconductor light emitting device includes a film of a nitride of a group 13 element grown on a seed crystal substrate by flux method from a melt including a flux and a group 13 element under nitrogen containing atmosphere, an n-type semiconductor layer provided on the film of the nitride, a light emitting region provided on the n-type semiconductor layer, and a p-type semiconductor layer provided on the light emitting region. The film includes an inclusion distributed layer in a region distant by 50 μm or less from an interface of the film on the side of the seed crystal substrate and including inclusions derived from components of the melt, and an inclusion depleted layer with the inclusion depleted formed on the inclusion distributed layer. | 06-12-2014 |
20140158979 | QUANTUM DOT PHOSPHOR FOR LIGHT EMITTING DIODE AND METHOD OF PREPARING THE SAME - Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured. | 06-12-2014 |
20140158980 | Emitting Device with Compositional and Doping Inhomogeneities in Semiconductor Layers - A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range. | 06-12-2014 |
20140158981 | MULTIPLE QUANTUM WELL FOR ULTRAVIOLET LIGHT EMITTING DIODE AND A PRODUCTION METHOD THEREFOR - A multiple quantum well structure for an ultraviolet light-emitting diode, comprising: an Al | 06-12-2014 |
20140158982 | LIGHT-EMITTING DEVICE, BACKLIGHT UNIT, DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF - A light emitting device may include: a light emitting unit; a wavelength conversion unit disposed in a path of light emitted from the light emitting unit and converting a wavelength of light emitted from the light emitting unit; and a light transmission unit formed on at least one side of the wavelength conversion unit. The wavelength conversion unit may include a first quantum dot converting a wavelength of light into red light and a second quantum dot converting a wavelength of light into green light, and the patterns of first quantum dot and second quantum dot are alternately disposed repeatedly at least one or more times. | 06-12-2014 |
20140158983 | NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT - A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%. | 06-12-2014 |
20140166973 | COMPOSITION HAVING DISPERSION OF NANO-PARTICLES THEREIN AND METHODS OF FABRICATING SAME - Compositions having a dispersion of nano-particles therein and methods of fabricating compositions having a dispersion of nano-particles therein are described. In an example, a method of forming a composition having a dispersion of nano-particles therein includes forming a mixture of semiconductor nano-particles and discrete prepolymer molecules. A polymer matrix is formed from the discrete prepolymer molecules. The polymer matrix includes a dispersion of the semiconductor nano-particles therein. In another example, a composition includes a medium including discrete prepolymer molecules. The medium is a liquid at 25 degrees Celsius. A plurality of semiconductor nano-particles is suspended in the medium. | 06-19-2014 |
20140166974 | NANO-STRUCTURED LIGHT-EMITTING DEVICES - A nano-structured light-emitting device includes a plurality of light-emitting nanostructures each having a resistant layer disposed thereon. The device includes a first semiconductor layer of a first conductivity type, and a plurality of nanostructures disposed on the first semiconductor layer. Each nanostructure includes a nanocore, and an active layer and a second semiconductor layer of a second conductivity type that enclose surfaces of the nanocores. An electrode layer encloses and covers the plurality of nanostructures A plurality of resistant layers are disposed on the electrode layer and each corresponds to a respective nanostructure of the plurality of nanostructures. | 06-19-2014 |
20140166975 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode. | 06-19-2014 |
20140166976 | HIGH EFFICIENCY LIGHT EMITTING DIODE - Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack. | 06-19-2014 |
20140166977 | Deep Ultraviolet Light Emitting Diode - A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane). | 06-19-2014 |
20140166978 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AIGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AIGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers. | 06-19-2014 |
20140166979 | Light-Emitting Diode with Textured Substrate - A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions. | 06-19-2014 |
20140166980 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer. | 06-19-2014 |
20140175377 | POLARIZED WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND TRANSPARENT PHOSPHORS - A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength. | 06-26-2014 |
20140183442 | ENGINEERED SUBSTRATE ASSEMBLIES WITH EPITAXIAL TEMPLATES AND RELATED SYSTEMS, METHODS, AND DEVICES - Engineered substrates having epitaxial templates for forming epitaxial semiconductor materials and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a first semiconductor material at a front surface of a donor substrate. The first semiconductor material is transferred to first handle substrate to define a first formation structure. A second formation structure is formed to further include a second semiconductor material homoepitaxial to the first formation structure. The method can further include transferring the first portion of the second formation structure to a second handle substrate such that a second portion of the second formation structure remains at the first handle substrate. | 07-03-2014 |
20140183443 | ENGINEERED SUBSTRATES HAVING EPITAXIAL FORMATION STRUCTURES WITH ENHANCED SHEAR STRENGTH AND ASSOCIATED SYSTEMS AND METHODS - Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a shear strength enhancement material at a front surface of a donor substrate and implanting ions a depth into the donor substrate through the shear strength enhancement material. The ion implantation can form a doped portion in the donor substrate that defines an epitaxial formation structure. The method can further include transferring the epitaxial formation structure from the donor substrate to a front surface of a handle substrate. The shear strength enhancement material can be positioned between the epitaxial formation structure and the front surface of the handle substrate and bridge defects in the front surface of the handle substrate. | 07-03-2014 |
20140183444 | HIGH-VOLTAGE FLIP-CHIP LED STRUCTURE AND MANUFACTURING METHOD THEREOF - A high-voltage flip-chip LED structure and a manufacturing method thereof are disclosed. The manufacturing method includes: providing a die substrate, depositing a first passivation layer, forming a co-electrical-connecting layer, depositing a second passivation layer, depositing a mirror layer, forming two conductive tunnels by etching, and providing two connecting metal layers. The die substrate includes a sapphire substrate and multiple LED chips thereon. The fully transparent co-electrical-connecting layer, formed after formation of the first passivation layer, electrically connects the LED chips in series. The outer surface of the deposited second passivation layer is a flat passivation surface that enables the mirror layer thereon to be level and reflect light without optical path difference. The two connecting metal layers are provided for electrical conduction. The high-voltage flip-chip LED structure thus formed has fully transparent electrodes and can output light without optical path difference. | 07-03-2014 |
20140183445 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a substrate, a buffer layer formed on the substrate, an epitaxial structure formed on the buffer layer, and a plurality of carbon nanotube bundles formed in the epitaxial structure. | 07-03-2014 |
20140183446 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×10 | 07-03-2014 |
20140183447 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer includes a first p-side layer of Al | 07-03-2014 |
20140183448 | VERTICAL LIGHT EMITTING DIODE WITH PHOTONIC NANOSTRUCTURES AND METHOD OF FABRICATION THEREOF - There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer. There is also provided a vertical light emitting diode with the self-assembly derived ordered nanoparticles. | 07-03-2014 |
20140183449 | Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof - Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced. | 07-03-2014 |
20140191187 | SUBMICRO-FACET LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A light emitting device comprises an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer, wherein the active-region has a wavy structure with nano or micro fluctuations in its thickness direction. The n-type layer comprises crystal facets on its upper surface, and the active-region is conformally formed on the upper surface of the n-type layer and substantially follows the shape of the crystal facets so as to form the wavy structure. A method for fabricating the same is also provided. | 07-10-2014 |
20140191188 | TERAHERTZ MODULATOR - According to one aspect, the present invention concerns a terahertz modulator ( | 07-10-2014 |
20140191189 | STAGGERED COMPOSITION QUANTUM WELL METHOD AND DEVICE - A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers X | 07-10-2014 |
20140191190 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant. | 07-10-2014 |
20140191191 | Light Emitting Devices with Textured Active Layer - A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion parallel to the sidewall of the trench and a second portion parallel to the bottom of the trench. | 07-10-2014 |
20140191192 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer. | 07-10-2014 |
20140191193 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT HAVING SUPERIOR CURRENT SPREADING EFFECT AND METHOD FOR MANUFACTURING SAME - Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading part, which is formed from nitride comprising current spreading impurities, and which is disposed on the n-type nitride layer; an activation layer disposed on the current spreading part; and a p-type nitride layer disposed on the activation layer, wherein the current spreading impurities comprise carbon (C). | 07-10-2014 |
20140191194 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure. | 07-10-2014 |
20140197372 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting structure having a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A first electrode is electrically connected to the first conductive semiconductor layer and is provided under the light emitting structure, and a second electrode is electrically connected to the second conductive semiconductor layer and is provided under the light emitting structure. A first contact portion is provided through the light emitting structure and includes a first region electrically connected to the first electrode. A second region contacts a top surface of the first conductive semiconductor layer, and an insulating ion implantation layer is provided around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer. | 07-17-2014 |
20140197373 | LIGHT-RECEIVING DEVICE AND METHOD FOR PRODUCING THE SAME - A light-receiving device includes a light-receiving layer having an undoped multi-quantum well structure; a cap layer disposed on the light-receiving layer, the cap layer including a semiconductor layer doped with a p-type impurity; a mesa structure including the cap layer; a p-type region extending from the p-type semiconductor layer toward the light-receiving layer, the p-type region including the p-type impurity diffused from the semiconductor layer in the mesa structure; a p-n junction formed at an end of the p-type region; and an electrode disposed on the cap layer of the mesa structure. The mesa structure is defined by a trench surrounding the mesa. The trench has a bottom that reaches the vicinity of an upper surface of the light-receiving layer. The p-n junction is located in the light-receiving layer or at the boundary between the light-receiving layer and the cap layer disposed on the light-receiving layer. | 07-17-2014 |
20140197374 | METHOD FOR MANUFACTURING A NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED THEREBY - There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film. | 07-17-2014 |
20140203239 | SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES - Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures. | 07-24-2014 |
20140203240 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer. | 07-24-2014 |
20140203241 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device including a first to third conductive semiconductor layers which have an n-type dopant, an active layer, and a fourth and fifth conductive semiconductor layers which have a p-type dopant. The first and third conductive semiconductor layers are a GaN semiconductor, and the second conductive semiconductor layer is an InGaN-based semiconductor layer. The fourth conductive semiconductor layer is formed of an AlGaN semiconductor and the fifth conductive semiconductor layer is formed of a GaN-based semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor, and at least two of the plurality barrier layers has a thickness of about 50 Å to about 300 Å. | 07-24-2014 |
20140209856 | Light Emitting Device with All-Inorganic Nanostructured Films - A fused film and methods for making the fused film to be employed in a light emitting device are provided. In one embodiment, the disclosure provides a method for forming a film from fused all-inorganic colloidal nanostructures, where the all-inorganic colloidal nanostructures may include inorganic semiconductor nanoparticles and functional inorganic ligands that may be fused to form an electrical network that is electroluminescent. In another embodiment, the disclosure provides a light-emitting device including the fused film that minimizes current leakage in the device and provides increased stability, longevity, and luminescent efficiency to the device. | 07-31-2014 |
20140209857 | METHOD OF MANUFACTURE FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, WAFER, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step. | 07-31-2014 |
20140209858 | NANO-STRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer. | 07-31-2014 |
20140209859 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores. | 07-31-2014 |
20140209860 | LIGHT EMITTING DEVICE FOR IMPROVING A LIGHT EMISSION EFFICIENCY - A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer. | 07-31-2014 |
20140217355 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor laminate having first and second conductivity type semiconductor layers and an active layer formed between the first and second conductivity type semiconductor layers; first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively; and a micro-pattern formed on a light emitting surface from which light generated from the active layer is output, wherein a section of the micro-pattern parallel to the light emitting surface has a polygonal shape. | 08-07-2014 |
20140217356 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES - An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack. | 08-07-2014 |
20140217357 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer. | 08-07-2014 |
20140217358 | LIGHT-EMITTING DIODE AND THE MANUFACTURE METHOD OF THE SAME - This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises Al | 08-07-2014 |
20140217359 | Light-Emitting Apparatus - The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an intermediate region. The intermediate region has a discontinuous structure located between the first conductive semiconductor layer and the second conductive semiconductor layer. | 08-07-2014 |
20140217360 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer. | 08-07-2014 |
20140217361 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE - There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof. | 08-07-2014 |
20140231745 | P-SIDE LAYERS FOR SHORT WAVELENGTH LIGHT EMITTERS - A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of Al | 08-21-2014 |
20140231746 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer includes a first impurity region including a p-type impurity and a second impurity region including an n-type impurity. The first and second impurity regions are alternately repeated at least once. | 08-21-2014 |
20140231747 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×10 | 08-21-2014 |
20140231748 | SUBSTRATE HAVING CONCAVE-CONVEX PATTERN, LIGHT-EMITTING DIODE INCLUDING THE SUBSTRATE, AND METHOD FOR FABRICATING THE DIODE - Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present. | 08-21-2014 |
20140239250 | ETCHED-FACET LASERS HAVING WINDOWS WITH SINGLE-LAYER OPTICAL COATINGS - An edge-emitting etched-facet optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet and a waveguide second etched end facet. A mask layer used to form windows in which the etched end facets are disposed consists of a single dielectric material disposed directly on the ridge waveguide. An optical coating consisting of no more than one layer of the same dielectric material of which the second mask is made is disposed directly on the second mask and disposed directly on the windows to coat the etched end facets. | 08-28-2014 |
20140239251 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND DISPLAY DEVICE - A semiconductor light emitting element is provided in which an optical intensity distribution of light to be emitted is the normal distribution and which can form a highly fine image. In the semiconductor light emitting element, first regions and second regions are periodically and alternately arranged in an optical waveguide along an extending direction thereof, and when the number of the first regions and the number of the second regions are represented by P | 08-28-2014 |
20140239252 | LIGHT-EMITTING ELEMENT HAVING NITRIDE SEMICONDUCTOR MULTIQUANTUM BARRIER, AND PROCESS FOR PRODUCTION THEREOF | 08-28-2014 |
20140239253 | Optoelectronic Semiconductor Chip and Method for Producing the Latter - A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween. | 08-28-2014 |
20140246648 | LIGHT EMITTING DEVICE PACKAGES AND METHODS OF FORMING THE SAME - A light emitting device package, comprises a light emitting structure having first and second electrodes insulated from each other; and a support structure. The support structure comprises: a first support electrode electrically connected to the first electrode of the light emitting structure; a second support electrode electrically connected to the second electrode of the light emitting structure, the second support electrode spaced apart from, and electrically insulated from, the first support electrode; and a support connection portion between the first support electrode and the second support electrode. The light emitting structure includes a protrusion portion that protrudes in a horizontal direction beyond a sidewall of at least one of the first support electrode and the second support electrode so that a void is present below the protrusion portion and above a plane extending from bottoms of the first and second support electrodes. | 09-04-2014 |
20140246649 | MULTI-LUMINOUS ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same. The multi-luminous element according to the present invention reduces loss of light emitting efficiency and can generate multi-wavelength light by repeatedly disposing the first and second active layers in the horizontal direction. | 09-04-2014 |
20140252308 | METHOD OF SELECTIVE PHOTO-ENHANCED WET OXIDATION FOR NITRIDE LAYER REGROWTH ON SUBSTRATES AND ASSOCIATED STRUCTURE - Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation. | 09-11-2014 |
20140252309 | VISIBLE-LIGHT LIGHT EMITTING DIODE FOR HIGH-SPEED VEHICLE COMMUNICATION - A visible-light light emitting diode having a center wavelength of 400 to 560 nm formed on a patterned sapphire substrate and with a four-layer quantum well as an active layer. The patterned sapphire substrate can include a plurality of recesses having openings and a plurality of convex portions on one surface thereof, the recesses being integrally formed between the neighboring convex portions or a plurality of convex portions on one surface thereof, a recess being defined between two of the neighboring convex portions and wherein the convex portions on the surface are made of dielectric material. A lens layer is disposed on an upper P-type doped region. | 09-11-2014 |
20140252310 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a stacked body and an optical member. The stacked body includes a first semiconductor layer, a second semiconductor, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The optical member is stacked with the stacked body in the first direction. The optical member is light-transmissive. The length of the optical member in the first direction is longer than a length of the first semiconductor layer in the first direction. The surface area of the optical member projected onto a plane perpendicular to the first direction is less than a surface area of the stacked body projected onto the plane. | 09-11-2014 |
20140252311 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of an n-type, a second semiconductor layer of a p-type, and a light emitting unit. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer includes a nitride semiconductor. The light emitting unit is provided between the first semiconductor layer and the second semiconductor layer. The light emitting unit includes a plurality of well layers stacked alternately with a plurality of barrier layers. The well layers include a first p-side well layer most proximal to the second semiconductor layer, and a second p-side well layer second most proximal to the second semiconductor layer. A localization energy of excitons of the first p-side well layer is smaller than a localization energy of excitons of the second p-side well layer. | 09-11-2014 |
20140264257 | GROUP I-III-VI MATERIAL NANO-CRYSTALLINE CORE AND GROUP I-III-VI MATERIAL NANO-CRYSTALLINE SHELL PAIRING - Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core. | 09-18-2014 |
20140264258 | MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other. | 09-18-2014 |
20140264259 | MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction. | 09-18-2014 |
20140264260 | LIGHT EMITTING STRUCTURE - The present invention provides a semiconductor column structure which includes a light emitting layer and at least two facets with different crystalline orientations. The surface area ratio of the at least two facets is changed to alter the luminescence properties, such as CCT and CRI. Particularly, the surface area ratio of the at least two facets is adjusted in a range of from 1:0.1 to 1:10. | 09-18-2014 |
20140264261 | LIGHT EMITTING DEVICE ON METAL FOAM SUBSTRATE - A light emitting device having an electrically conductive metal foam or porous metal substrate, one or more light emitting nanowires in contact with the substrate, and a metal or conductive oxide contact layer in contact with each nanowire junction opposite of the substrate. More specifically, a light emitting device having an electrically conductive metal foam substrate, one or more light emitting nanowires in contact with the substrate, a quantum well on the nanowire(s), a p-type shell on the quantum well, a metal or conductive oxide contact layer in contact with the shell, and an energy down-converting material. Also disclosed is the related method of making a light emitting device. | 09-18-2014 |
20140264262 | Concentric Forster Resonance Energy Transfer Relay for the Parallel Detection of Two Bio/Physicochemical Process - Described herein is a Förster (or fluorescence) resonance energy transfer (FRET) configuration with three energy transfer pathways between three luminescent components, where two of the energy transfer steps occur in sequence as a relay, and the first step of the relay is in competition with a third energy transfer process (energy transfer from the donor to the intermediary is in competition with energy transfer from the donor directly to the terminal acceptor). | 09-18-2014 |
20140264263 | PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR CONTACTS - In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies. | 09-18-2014 |
20140264264 | LIGHT EMITTING DIODE - A light emitting diode (LED) and a method for manufacturing the same is disclosed. The disclosed LED comprises a first substrate, an epitaxy layer, and a plurality of bumps. The first substrate is doped with YAG: Ce and is for converting a first light with a first range of wavelength to a second light with a second range of wavelength. The epitaxy layer is disposed on the first substrate and is for emitting the first light. The plurality of bumps are disposed on the epitaxy layer. With the first substrate doped with YAG: Ce, the disclosed LED does not need additional phosphor to convert the first light with the first range of wavelength to the second light with the second range of wavelength. | 09-18-2014 |
20140264265 | SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS COMPRISING INGAN, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND LIGHT EMITTING DEVICES FORMED FROM SUCH SEMICONDUCTOR STRUCTURES - Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising In | 09-18-2014 |
20140264266 | PACKAGING STRUCTURE OF LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same. The light emitting diode packaging structure comprises: an insulating substrate with through holes formed on each side of the upper surface thereof, the through hole being filling with conductive metal; a n-type layer formed on the insulating substrate with a hole, which is filled with conductive metal; an active layer provided on the n-type layer; a p-type layer formed on the active layer; an insulating layer configured on one side of the n-type layer, the active layer and the p-type layer and to cover part of the upper surface of the p-type layer; a p-type electrode configured to cover the insulating layer and part of the upper surface of the p-type layer; a n-type electrode provided on a side of the upper surface of the n-type layer and configured to connect with the conductive metal in the through hole in the insulating substrate; a first back electrode provided at one side of back surface of the insulating substrate, the first back electrode connecting with the p-type electrode through the conductive metal in the through hole in the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate, the second back electrode connecting with the n-type electrode through the conductive metal in the through hole in the insulating substrate; an optical element packaged on the base substrate, thereby finishing a device. | 09-18-2014 |
20140264267 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer. | 09-18-2014 |
20140264268 | METHOD AND APPARATUS FOR FABRICATING PHOSPHOR-COATED LED DIES - The present disclosure involves lighting apparatus. The lighting apparatus includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A photo-conversion layer is disposed over the second doped semiconductor layer and over side surfaces of the first and second doped semiconductor layers and the light-emitting layer. The photo-conversion layer has an angular profile. | 09-18-2014 |
20140264269 | TUNABLE LIGHT EMITTING DIODE USING GRAPHENE CONJUGATED METAL OXIDE SEMICONDUCTOR-GRAPHENE CORE-SHELL QUANTUM DOTS AND ITS FABRICATION PROCESS THEREOF - Disclosed is a method of preparing metal oxide semiconductor-graphene core-shell quantum dots by chemically linking graphenes with superior electrical properties to a metal oxide semiconductor, and a method of fabricating a light emitting diode by using the same. The light emitting diode according to the present invention has the advantages that it shows excellent power conversion efficiency, the cost for materials and equipments required for its fabrication can be reduced, its fabricating process is simple, and it is possible to mass-produce and enlarge the size of display based on a quantum dot light emitting diode. Further, the present invention relates to core-shell quantum dots that can be used in fabricating a light emitting diode with a different wavelength by using various multi-component metal oxide semiconductors and a fabricating method thereof. | 09-18-2014 |
20140284548 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT COUPLING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor laminated body provided on a semiconductor substrate. The semiconductor laminated body includes a light emitting layer. The light emitting layer includes a quantum well structure made by alternately laminating n (an integer of not less than 1) well layers and (n+1) barrier layers and emits light with a peak wavelength of 650 nm to 1000 nm. Each of the well layers has a thickness of smaller than 15 nm. Each of the barrier layers has a thickness of 15 nm to 50 nm. | 09-25-2014 |
20140284549 | SEMICONDUCTOR NANOCRYSTALS, A METHOD FOR COATING SEMICONDUCTOR NANOCRYSTALS, AND PRODUCTS INCLUDING SAME - A semiconductor nanocrystal that emits green light having a peak emission with a full width at half maximum of about 30 nm or less at 100° C. and a method of making coated semiconductor nanocrystals are provided. Materials and other products including semiconductor nanocrystals described herein and materials and other products including semiconductor nanocrystals prepared by a method described herein are also disclosed. | 09-25-2014 |
20140284550 | LIGHT-EMITTING DEVICE - A light-emitting device including a GaN-based semiconductor has a structure in which sequentially deposited are an n-type semiconductor layer, a superlattice structure layer including at least one InGaN superlattice layer, an active layer, an AlGaN-based semiconductor layer, and a p-type semiconductor layer. A concavo-convex structure is formed on the interface of the AlGaN-based semiconductor layer with the p-type semiconductor layer. The active layer is an InGaN layer or an InGaN quantum well layer. The InGaN superlattice layer has an In composition that is greater than that of the active layer. | 09-25-2014 |
20140284551 | Nanowire LED Structure with Decreased Leakage and Method of Making Same - A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support, and an insulating mask layer located over the support. The nanowire cores include semiconductor nanowires epitaxially extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer. The device also includes a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, a first electrode layer that contacts the second conductivity type semiconductor shells and extends into spaces between the semiconductor shells, and an insulating layer located between the insulating mask layer and the first electrode in the spaces between the semiconductor shells. | 09-25-2014 |
20140291610 | METHOD AND APPARATUS FOR FABRICATING PHOSPHOR-COATED LED DIES - The present disclosure involves lighting apparatus. The lighting apparatus includes a light-emitting device. The light-emitting device includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A photo-conversion layer is coated around the light-emitting device. A lens houses the light-emitting device and the photo-conversion layer within. The lens includes a first sub-layer and a second sub-layer. The first and second sub-layers have different characteristics. | 10-02-2014 |
20140291611 | METHOD AND APPARATUS FOR FABRICATING PHOSPHOR-COATED LED DIES - The present disclosure involves lighting apparatus. The lighting apparatus includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A first conductive terminal and a second conductive terminal are each disposed below the first doped semiconductor layer. A photo-conversion layer is disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer. A bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals. | 10-02-2014 |
20140291612 | LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light-emitting diode and method of manufacturing the same, including a flat portion and a mesa structure including an inclined side surface formed by wet etching and a top surface. A protective film and an electrode film sequentially cover a part of the flat portion and at least a part of the mesa structure, the protective film including an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. The electrode film is a continuous film that contacts the surface of the exposed compound semiconductor layer, covers a portion of the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent film is formed between a reflecting layer and a compound semiconductor layer. A through-electrode is provided in a range of the transparent film which overlaps the light emission hole. | 10-02-2014 |
20140299836 | SINGLE-CHIP TWIN LIGHT SOURCE LIGHT EMITTING DEVICE - Disclosed is a single-chip twin light source light emitting device including a first epitaxial layer, a substrate, and a second epitaxial layer. The first epitaxial layer includes a first n-type semiconductor layer with a n-type conducting structure, a first light emitting layer with a multi-quantum well structure, and a first p-type semiconductor layer with a p-type conducting structure. The second epitaxial layer includes a second n-type semiconductor layer with a n-type conducting structure, a second light emitting layer with a multi-quantum well structure, and a second p-type semiconductor layer with a p-type conducting structure. Therefore, the light emitting device can emit one-color or two-color light by controlling the first epitaxial layer and the second epitaxial layer respectively. | 10-09-2014 |
20140299837 | MICRO LED DISPLAY - A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate. | 10-09-2014 |
20140306176 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING LIGHT EMITTING DIODES - An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided. | 10-16-2014 |
20140306177 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer. | 10-16-2014 |
20140306178 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND ILLUMINATION SYSTEM - A light emitting device is provided. The light emitting device includes a first semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first semiconductor layer, a second semiconductor layer on the active layer, and an electrode layer on the second semiconductor layer. A top surface of a first barrier layer adjacent to the second semiconductor layer includes an uneven surface and has a larger area than an area of a top surface of a second barrier layer, wherein the first barrier layer has a thickness thicker than a thickness of the second barrier layer. | 10-16-2014 |
20140306179 | LIGHT-EMITTING DEVICE - A light-emitting device comprising: a hole injection layer, an electron injection layer, and a composite emitter layer including a soft material exciton donor and exciton acceptor nanoparticles substantially dispersed within the exciton donor matrix, wherein electrons from the electron injection layer and holes from the hole injection layer generate excitons in the exciton donor matrix, and the primary mechanism of photon generation at the nanoparticles is substantially through non-radiative energy transfer of the generated excitons directly into the nanoparticles. | 10-16-2014 |
20140312299 | LIGHT EMITTING DIODE CHIP - A light emitting diode (LED) includes a substrate, a semiconductor structure formed on the substrate, and two electrodes formed on the semiconductor structure. The semiconductor structure includes a bearing surface via which light generated by the semiconductor structure radiates out of the LED. A plurality of microstructures is formed on the bearing surface. A cross section of each microstructure is rectangular triangular having a vertical side surface. Each microstructure includes a top surface. The top surface is inclined relative to the bearing surface. | 10-23-2014 |
20140312300 | SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME - A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. | 10-23-2014 |
20140312301 | PRODUCTION OF A SEMICONDUCTOR DEVICE HAVING AT LEAST ONE COLUMN-SHAPED OR WALL-SHAPED SEMICONDUCTOR ELEMENT - Described is a method for producing a semiconductor device ( | 10-23-2014 |
20140319453 | QUANTUM ROD AND METHOD OF FABRICATING THE SAME - The present invention provides a quantum rod including a core including zinc compound; and a shell covering the core and including ZnS. The quantum rod emits the short wavelength light. | 10-30-2014 |
20140319454 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention discloses a nitride semiconductor light emitting device with improved light efficiency. The nitride semiconductor light emitting device includes a n-type nitride layer and p-type nitride layer, an active layer disposed between the n-type and p-type nitride layers and with a multiple quantum well structure wherein a plurality of quantum well layers and a plurality of quantum barrier layers are stacked alternatively in the active layer, and a superlattice layer between the active layer and the p-type nitride layer with asymmetric structure. Herein, a thickness of a well layers gradually increases from the p-type nitride layer to the active layer and the height of the barrier layers gradually increases from the active layer to the p-type nitride layer and therefore, an injection efficiency of a hole supplied from p-type nitride layer to an active layer is increased. | 10-30-2014 |
20140319455 | SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view. | 10-30-2014 |
20140319456 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The semiconductor light emitting device includes: a substrate; a first cladding layer disposed on the substrate; an emitting layer disposed on the first cladding layer; a second cladding layer disposed on the emitting layer; a contact layer disposed at a predetermined region on the second cladding layer; an optically transmissive electrode layer disposed on the contact layer; a surface electrode layer disposed on the optically transmissive electrode layer; and an aperture formed by opening a region corresponding to the predetermined region of the surface electrode layer. There is provided a semiconductor light emitting device of which the light extracting efficiency can be improved to achieve high luminance. | 10-30-2014 |
20140319457 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga | 10-30-2014 |
20140319458 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 10-30-2014 |
20140319459 | METHODS FOR FABRICATING SELF-ALIGNING SEMICONDUCTOR HETEREOSTRUCTURES USING NANOWIRES - Methods for fabricating self-aligned heterostructures and semiconductor arrangements using silicon nanowires are described. | 10-30-2014 |
20140319460 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb<1, where hb is a depth of the recess, rb is a width of a bottom portion of the recess, and Rb is a width of the protrusion. | 10-30-2014 |
20140326944 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a nitride semiconductor light emitting device includes forming a first conductivity type nitride semiconductor layer. An active layer is formed on the first conductivity type nitride semiconductor layer. A second conductivity type nitride semiconductor layer is formed on the active layer. In the forming of the active layer, quantum well layers and quantum barrier layers are alternatively stacked and at least two dopant layers are formed inside of at least one of the quantum well layers. The dopant layers are doped with a dopant in a predetermined concentration. | 11-06-2014 |
20140326945 | Optoelectronic Arrangement Provided with a Semiconductor Nanowire with a Longitudinal Section that is Surrounded by a Part of a Mirror - The optoelectronic arrangement comprises a semiconductor nanowire intended to participate in the processing, notably in a reception and/or an emission, of a light concerned and a mirror reflecting the light concerned. The semiconductor nanowire comprises a first section and a second section, and the mirror surrounds, at least longitudinally, the first section of the semiconductor nanowire, said second section extending out of the mirror. | 11-06-2014 |
20140326946 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode, and a reflection layer. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the substrate in sequence. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located between the active layer and the second semiconductor layer. The reflection layer covers the second semiconductor layer. | 11-06-2014 |
20140326947 | LIGHT EMITTING DIODE - A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer and a third semiconductor stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes. | 11-06-2014 |
20140326948 | SEMICONDUCTOR LAYER SEQUENCE, OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE - In at least one embodiment, the semiconductor layer sequence ( | 11-06-2014 |
20140326949 | LIGHT SOURCE WITH QUANTUM DOTS - The invention provides a luminescent nano particles based luminescent material comprising a matrix of interconnected coated luminescent nano particles, wherein for instance wherein the luminescent nano particles comprise CdSe, wherein the luminescent nano particles comprise a coating of CdS and wherein the matrix comprises a coating comprising ZnS. The luminescent material according may have a quantum efficiency of at least 80% at 25° C., and having a quench of quantum efficiency of at maximum 20% at 100° C. compared to the quantum efficiency at 25° C. | 11-06-2014 |
20140332754 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention presents a solid-state semiconductor light emitting device with reduced forward voltage and improved quantum efficiency. The light emitting device is characterized by its multiple-quantum-well active-region with opposite composition grading in the quantum barriers and quantum wells along the device epitaxy direction. | 11-13-2014 |
20140339495 | MICRO LED WITH WAVELENGTH CONVERSION LAYER - A light emitting device and method of manufacture are described. In an embodiment, the light emitting device includes a micro LED device bonded to a bottom electrode, a top electrode in electrical contact with the micro LED device, and a wavelength conversion layer around the micro LED device. The wavelength conversion layer includes phosphor particles. Exemplary phosphor particles include quantum dots that exhibit luminescence due to their size, or particles that exhibit luminescence due to their composition. | 11-20-2014 |
20140339496 | Vertical Light Emitting Diode (VLED) Dice Having Confinement Layers With Roughened Surfaces And Methods Of Fabrication - A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances. | 11-20-2014 |
20140339497 | STABILIZED NANOCRYSTALS - Fluorescent semiconductor nanocrystals and quantum dots having an inorganic coating on the outermost surface of the nanocrystal are described herein as well as methods for preparing and using such nanocrystals and quantum dots. Devices in which such nanocrystals and quantum dots are used are also described. | 11-20-2014 |
20140339498 | RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor body with the semiconductor layer sequence extends in a vertical direction between a first major face and a second major face; the semiconductor layer sequence includes an active region that generates radiation, a first region of a first conduction type and a second region of a second conduction type differing from the first conduction type; the first region extends in a vertical direction between the first major face and the active region; the second region extends in a vertical direction between the second major face and the active region; at least one layer of the active region is based on an arsenide compound semiconductor material; and relative to its respective extent in the vertical direction, the first region or the second region is based in a proportion of at least half on a phosphide compound semiconductor material. | 11-20-2014 |
20140339499 | SURFACE-PASSIVATED SILICON QUANTUM DOT PHOSPHORS - Phosphors formed using silicon nanoparticles are provided. The phosphors exhibit bright fluorescence and high quantum yield, making them ideal for lighting applications. Methods for making the silicon phosphors are also provided, along with lighting devices that incorporate the silicon phosphors. | 11-20-2014 |
20140339500 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 11-20-2014 |
20140346437 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of In | 11-27-2014 |
20140346438 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm. | 11-27-2014 |
20140346439 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part. | 11-27-2014 |
20140346440 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode. | 11-27-2014 |
20140353578 | LIGHT-EMITTING DEVICE - A light emitting device disclosed herein comprises a substrate, a buffer stack formed on the substrate, a tunneling junction stack formed on the buffer stack comprising an un-doped layer, a light-emitting stack formed on the tunneling junction stack, and a contact stack formed on the light emitting stack. The structure of the light emitting device disclosed also reduce the energy band bending arisen from the lattice mismatch and improve the epitaxy quality of the stacks. | 12-04-2014 |
20140353579 | BLUE LIGHT-EMITTING DIODES BASED ON ZINC SELENIDE QUANTUM DOTS - The present invention relates to colloidal quantum dots, to a process for producing such colloidal quantum dots, to the use thereof and to optoelectronic components comprising colloidal quantum dots. | 12-04-2014 |
20140353580 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device includes an active layer formed between first and second semiconductor layers. The first semiconductor layer includes a first surface facing the active layer, a second surface opposing the first surface, and a side surface that includes a stepped portion. The stepped portion causes the side surface to extend beyond one of the first surface or second surface of the first semiconductor layer. A light emitting device may also be formed with a buffer layer that includes a stepped portion, and a light emitting device package and system may be formed from the light emitting devices. | 12-04-2014 |
20140353581 | LIGHT-EMITTING DIODE CHIP - A light-emitting diode chip comprising:—a semiconductor body ( | 12-04-2014 |
20140353582 | HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved. | 12-04-2014 |
20140361243 | LIGHT EMITTING DEVICE - A light emitting device includes at least one layer below or above a reflective layer to prevent delamination of the reflective layer from a layer below and/or above the reflective layer. | 12-11-2014 |
20140361244 | Nanowire LED Structure with Decreased Leakage and Method of Making Same - A semiconductor device includes a plurality of first conductivity type semiconductor nanowire cores located over a support and extending from portions of a semiconductor surface of the support exposed through openings in the insulating mask layer, and a plurality of semiconductor shells extending over the respective nanowire cores. Each of the plurality of semiconductor shells includes at least one semiconductor interior shell extending around the respective one of the plurality nanowire cores, and a second conductivity type semiconductor outer shell extending around the at least one semiconductor interior shell. A first electrode layer contacts the second conductivity type semiconductor outer shell of the plurality of semiconductor shells and extends into spaces between the semiconductor shells. The semiconductor interior shell includes a semiconductor foot portion which extends under the first electrode and under the respective second conductivity type semiconductor outer shell on the insulating masking layer in the spaces between the plurality of semiconductor shells. | 12-11-2014 |
20140361245 | LED CHIP AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an LED chip includes: providing a laminated structure with a nanoimprinted material coated thereon; providing an imprinted mold with a patterned structure for pressing and curing the nanoimprinted material, removing the imprinted mold, etching the nanoimprinted material and the laminated structure; and forming electrodes on the etched laminated structure. An LED chip is also provided. | 12-11-2014 |
20140361246 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device includes a first conductive semiconductor layer ( | 12-11-2014 |
20140361247 | GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE - Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented. | 12-11-2014 |
20140361248 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer. | 12-11-2014 |
20140367633 | LED DISPLAY WITH WAVELENGTH CONVERSION LAYER - A display and method of manufacture are described. The display may include a substrate including an array of pixels with each pixel including multiple subpixels, and each subpixel within a pixel is designed for a different color emission spectrum. An array of micro LED device pairs are mounted within each subpixel to provide redundancy. An array of wavelength conversions layers comprising phosphor particles are formed over the array of micro LED device pairs for tunable color emission spectrum. | 12-18-2014 |
20140367634 | NITRIDE-BASED LIGHT EMITTING DIODE INCLUDING NONORODS AND METHOD OF MMANUFACTURING THE SAME - Disclosed are a nitride-based light emitting diode (LED) and a method of manufacturing the same. The LED includes an n-type nitride semiconductor layer formed on a substrate, a plurality of n-type nitride semiconductor nanorods formed on the n-type nitride semiconductor layer and each having a non-polar face on a major surface thereof, a photoactive layer formed on the n-type nitride semiconductor layer and surfaces of the n-type nitride semiconductor nanorods, a p-type nitride semiconductor layer formed in a hexagonal pyramid shape on the photoactive layer, a current spreading layer formed on the p-type nitride semiconductor layer, an anode formed on the current spreading layer, and a cathode formed on an exposed surface of the n-type nitride semiconductor layer. | 12-18-2014 |
20140367635 | LIGHT EMITTING DIODE STRUCTURE - An LED structure includes a substrate, an emitting multilayer structure, a plurality of microstructures and a transparent conductive layer. The emitting multilayer structure is formed on the substrate. The microstructures are spaced apart from each other on the light emitting multilayer structure, and an upper surface of each microstructure has a concave-convex surface. The transparent conductive layer is conformably covered over the light emitting multilayer structure and the microstructures. The transparent conductive layer has similar concave-convex surfaces due to the concave-convex surface of each microstructure. The light emitted from the emitting multilayer structure is changed due to the concave-convex surface of the transparent conductive layer, so that the phenomenon of total internal reflection can be reduced so as to increase the light transmittance. | 12-18-2014 |
20140367636 | ULTRAVIOLET LIGHT EMITTING DEVICE INCORPORATING OPTICALLY ABSORBING LAYERS - A light emitting device includes a p-side, an n-side, and an active layer between the p-side and the n-side. The p-side includes a p-side contact, an electron blocking layer, a p-side separate confinement heterostructure (p-SCH), and a p-cladding/current spreading region disposed between the p-SCH and the p-side contact. The n-side includes an n-side contact, and an n-side separate confinement heterostructure (n-SCH). The active layer is configured to emit light in a wavelength range, wherein the p-side and the n-side have asymmetrical optical transmission properties with respect to the wavelength range emitted by the active layer. | 12-18-2014 |
20140367637 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device includes a first electrode layer ( | 12-18-2014 |
20140367638 | Insulating Layer for Planarization and Definition of the Active Region of a Nanowire Device - Various embodiments include methods of fabricating a semiconductor device that include forming a plurality of nanowires on a support, wherein each nanowire comprises a first conductivity type semiconductor core and a second conductivity type semiconductor shell over the core, forming an insulating material layer over at least a portion of the plurality of nanowires such that at least a portion of the insulating material layer provides a substantially planar top surface, removing a portion of the insulating material layer to define an active region of nanowires, and forming an electrical contact over the substantially planar top surface of the insulating material layer. | 12-18-2014 |
20140367639 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer ( | 12-18-2014 |
20140367640 | LIGHT-EMITTING ELEMENT, EPITAXIAL WAFER, AND METHOD FOR PRODUCING THE EPITAXIAL WAFER - Provided are an epitaxial wafer and a light-emitting element having a type-II MQW formed of III-V compound semiconductors and configured to emit light with a sufficiently high intensity. The method includes a step of growing an active layer having a type-II multi-quantum well structure (MQW) on a III-V compound semiconductor substrate, wherein, in the step of forming the type-II multi-quantum well structure, the type-II multi-quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources such that a number of pairs of the type-II multi-quantum well structure is 25 or more. | 12-18-2014 |
20140367641 | MULTILAYER CONSTRUCTION - Multilayer construction is disclosed. The multilayer construction includes a II-VI semiconductor layer and a Si | 12-18-2014 |
20140374696 | LIGHT-EMITTING ELEMENT, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention provides a light-emitting element, display panel and manufacturing method thereof. The light-emitting element includes a cathode and an anode, disposed oppositely; and a light-emitting layer, disposed between the cathode and the anode; the light-emitting layer comprising a mixture of organic material and white-light emitting quantum dot material. As such, the present invention improves the stability and luminance of the light-emitting element, and the light-emitting element has the advantages of ultra-thin, transparent and easy to bend. | 12-25-2014 |
20140374697 | LIGHT-EMITTING ELEMENT, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention provides a light-emitting element, display panel and manufacturing method thereof. The light-emitting element includes a cathode and an anode, disposed oppositely; and a light-emitting layer, disposed between the cathode and the anode; the light-emitting layer comprising a mixture of organic material and blue quantum dot material. As such, the present invention improves the stability and luminance of the light-emitting element, and the light-emitting element has the advantages of ultra-thin, transparent and easy to bend. | 12-25-2014 |
20140374698 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING SAME - A light emitting diode chip includes a substrate and a first conductive layer formed on the substrate. The first conductive layer includes a plurality of P-type AlInGaN layers and a plurality of graphenel layers alternately stacked on each other. A P-type AlInGaN layer, an active layer and an N-type AlInGaN layer are formed on the first conductive layer in sequence. A second conductive layer is formed on the N-type AlInGaN layer. A first electrode is electrically connected to the first conductive layer and a second electrode is electrically connected to the second conductive layer. | 12-25-2014 |
20140374699 | SINGLE PHOTON DEVICE, APPARATUS FOR EMITTING AND TRANSFERRING SINGLE PHOTON, AND METHODS OF MANUFACTURING AND OPERATING THE SAME - Provided are single photon devices, single photon emitting and transferring apparatuses, and methods of manufacturing and operating the single photon devices. The single photon device includes a carrier transport layer disposed on a conductive substrate and at least one quantum dot disposed on the carrier transport layer. A single photon emitting and transferring apparatus includes a single photon device, an element that injects a single charge into the single photon device described above, a light collecting unit that collects light emitted from the single photon device, and a light transfer system that transmits light collected by the light collecting unit to the outside. | 12-25-2014 |
20140374700 | SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting diode, including: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate. The electron blocking layer includes at least one first AlGaN layer and at least one second AlGaN layer. The first AlGaN layer and the second AlGaN layer are alternately stacked. The adjacent first and second AlGaN layers have different Al component. | 12-25-2014 |
20150008389 | MICRO DEVICE WITH STABILIZATION POST - A method and structure for stabilizing an array of micro devices is disclosed. A stabilization layer includes an array of stabilization cavities and array of stabilization posts. Each stabilization cavity includes sidewalls surrounding a stabilization post. The array of micro devices is on the array of stabilization posts. Each micro device in the array of micro devices includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface. | 01-08-2015 |
20150008390 | INTEGRATED OPTICAL UPCONVERSION DEVICES AND RELATED METHODS - Integrated upconversion devices capable of upconverting incident visible to short wavelength infrared photons to visible photons are disclosed. The device may include a quantum dot-based photodiode and a light-emitting diode. The device may further include a gain element such as a thin-film transistor. | 01-08-2015 |
20150008391 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - In general, according to one embodiment, a semiconductor light emitting element includes: a first semiconductor layer; a second semiconductor layer; a light emitting layer. The light emitting layer includes a well layer with a thickness of t1 (nanometers). The well layer includes In | 01-08-2015 |
20150008392 | ENHANCED LIGHT EXTRACTION - There is herein described light generating electronic components with improved light extraction and a method of manufacturing said electronic components. More particularly, there is described LEDs having improved light extraction and a method of manufacturing said LEDs. | 01-08-2015 |
20150014625 | Quantum Dot Light Enhancement Substrate And Lighting Device Including Same - A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein. | 01-15-2015 |
20150014626 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting element includes a substrate and a stacked body. The stacked body is aligned with the substrate. The stacked body includes first and second semiconductor layers, a light emitting layer, and first and second electrodes. The first semiconductor layer has a first face including first and second portions. The first portion is provided with a plurality of convex portions. The second portion is aligned with the first portion. The second semiconductor layer is provided facing the second portion. The light emitting layer is provided between the second portion and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the light emitting layer. An interval of each of the convex portions is no less than 0.5 times and no more than 4 times a wavelength of a light emitted from the light emitting layer. | 01-15-2015 |
20150014627 | TWO-TERMINAL ELECTRONIC DEVICES AND THEIR METHODS OF FABRICATION - Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV. | 01-15-2015 |
20150014628 | INTEGRATION OF GALLIUM NITRIDE LEDS WITH ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE DEVICES ON SILICON SUBSTRATES FOR AC LEDS - A method for fabricating an epitaxial structure includes providing a substrate ( | 01-15-2015 |
20150021544 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a light-emitting device and a manufacturing method thereof. The light-emitting device includes: a heat dissipation layer ( | 01-22-2015 |
20150021545 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - The light emitting device includes a first conductive type semiconductor layer ( | 01-22-2015 |
20150021546 | SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor layer is arranged with the light emitting layer in a first direction. The first semiconductor layer includes a first portion and a second portion. The first portion and a second portion include a nitride semiconductor. The first portion has a first lattice polarity. The second portion has a second lattice polarity different from the first lattice polarity. | 01-22-2015 |
20150021547 | GAN BASED LED EPITAXIAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re | 01-22-2015 |
20150021548 | SEMICONDUCTOR NANOCRYSTALS, METHODS FOR MAKING SAME, COMPOSITIONS, AND PRODUCTS - A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 495 nm to 545 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 10. A composition comprising a plurality of semiconductor nanocrystals wherein the solid state photoluminescence efficiency of the composition at a temperature of 90° C. or above is at least 95% of the solid state photoluminescence efficiency of the composition 25° C. is further disclosed. A method for preparing semiconductor nanocrystals comprises introducing one or more first shell chalcogenide precursors and one or more first shell metal precursors to a reaction mixture including semiconductor nanocrystal cores, wherein the first shell chalcogenide precursors are added in an amount greater than the first shell metal precursors by a factor of at least about 2 molar equivalents and reacting the first shell precursors at a first reaction temperature of at least 300° C. to form a first shell on the semiconductor nanocrystal cores. Populations, compositions, components and other products including semiconductor nanocrystals of the invention are disclosed. Populations, compositions, components and other products including semiconductor nanocrystals made in accordance with any method of the invention is also disclosed. | 01-22-2015 |
20150021549 | LIGHT EMITTING DIODES WITH QUANTUM DOT PHOSPHORS - A quantum well-based p-i-n light emitting diode is provided that includes nanopillars with an average linear dimension of between 50 nanometers and 1 micron. The nanopillars include a laminar layer of quantum wells capable of non-radiative energy transfer to quantum dot nanocrystals. Quantum dot-Quantum well coupling through the side walls of the nanopillar-configured LED structure achieves a close proximity between quantum wells and quantum dots while retaining the overlying contact electrode structures. An white LED with attractive properties relative to conventional incandescent and fluorescence lighting devices is produced. | 01-22-2015 |
20150021550 | Semiconductor Structure having Nanocrystalline Core and Nanocrystalline Shell Pairing with Compositional Transition Layer - Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell and has a composition intermediate to the first and second semiconductor materials. In another example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A nanocrystalline outer shell surrounds the nanocrystalline shell and is composed of a third semiconductor material. A compositional transition layer is disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell and has a composition intermediate to the second and third semiconductor materials. | 01-22-2015 |
20150034900 | LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window. | 02-05-2015 |
20150034901 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes an electrode | 02-05-2015 |
20150034902 | MATERIALS, STRUCTURES, AND METHODS FOR OPTICAL AND ELECTRICAL III-NITRIDE SEMICONDUCTOR DEVICES - The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices. | 02-05-2015 |
20150041755 | LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY - A light emitting device with improved light extraction efficiency includes an n-type layer, a p-type layer, an active region sandwiched between the n-type layer and the p-type layer, a characteristic AlGaN layer over which the n-type layer is formed, and an AlN layer on which the characteristic AlGaN layer is formed. The characteristic AlGaN layer has gradually enlarging bandgap width from that of the n-type layer to that of the AlN layer in the direction pointing from the n-type layer to the AlN layer. The light-emitting device may further include a nanoporous AlN layer over which the AlN layer is formed. | 02-12-2015 |
20150041756 | THIN LIGHT EMITTING DIODE AND FABRICATION METHOD - A method for fabrication a light emitting diode (LED) includes growing a crystalline LED structure on a growth substrate, forming alternating material layers on the LED structure to form a reflector on a back side opposite the growth substrate and depositing a stressor layer on the reflector. A handle substrate is adhered to the stressor layer. The LED structure is separated from the growth substrate using a spalling process to expose a front side of the LED structure. | 02-12-2015 |
20150041757 | LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - A light-emitting element includes a light-emitting region which is made from a stacked structure configured from a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, and a light propagation region which is made from the stacked structure, extends from the light-emitting region, and has a light-emitting end surface. The light-emitting region is configured from a ridge stripe structure and ridge stripe adjacent portions positioned at both sides of the ridge stripe structure, and when a thickness of the second compound semiconductor layer in the ridge stripe adjacent portions is set to d | 02-12-2015 |
20150041758 | Group III Nitride Semiconductor Light-Emitting Device - The present invention provides a Group III nitride semiconductor light-emitting device which prevents an increase in driving voltage, and which has low threading dislocation density as a whole. The light-emitting device includes an embossed substrate. The substrate has, on a main surface thereof, a first region in which protrusions are arranged at a small pitch, and second regions in which protrusions are arranged at a large pitch. The second regions correspond to projection areas of a p-pad electrode and an n-pad electrode as viewed through the main surface of the substrate. The first region corresponds to a projection area, as viewed through the main surface of the substrate, of a region in which neither the p-pad electrode nor the n-pad electrode is formed. | 02-12-2015 |
20150041759 | COLLOIDAL NANOCRYSTALS AND METHOD OF MAKING - A tight confinement nanocrystal comprises a homogeneous center region having a first composition and a smoothly varying region having a second composition wherein a confining potential barrier monotonically increases and then monotonically decreases as the smoothly varying region extends from the surface of the homogeneous center region to an outer surface of the nanocrystal. A method of producing the nanocrystal comprises forming a first solution by combining a solvent and at most two nanocrystal precursors; heating the first solution to a nucleation temperature; adding to the first solution, a second solution having a solvent, at least one additional and different precursor to form the homogeneous center region and at most an initial portion of the smoothly varying region; and lowering the solution temperature to a growth temperature to complete growth of the smoothly varying region. | 02-12-2015 |
20150041760 | NEAR UV LIGHT EMITTING DEVICE - Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area. | 02-12-2015 |
20150048301 | ENGINEERED SUBSTRATES HAVING MECHANICALLY WEAK STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS - Engineered substrates having mechanically weak structures for separating substrates from epitaxially grown semiconductor structures and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming an intermediary material at an upper surface of a structural material and forming a plurality of pores in the intermediary material. The porous intermediary material and the structural material can define a handle substrate. The method can further include bonding an epitaxial formation structure on the handle substrate such that the porous intermediary material is between the epitaxial formation structure and the structural material. In various embodiments, the porous intermediary material is configured to break under mechanical stress. | 02-19-2015 |
20150048302 | LIGHT EMITTING DIODE HAVING CARBON NANOTUBES THEREIN AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a substrate, an un-doped GaN layer, a plurality of carbon nanotubes, an N-type GaN layer, an active layer formed on the N-type GaN layer, and a P-type GaN layer formed on the active layer. The substrate includes a first surface and a second surface opposite and parallel to the first surface. A plurality of convexes is formed on the first surface of the substrate. The un-doped GaN layer is formed on the first surface of the substrate. The plurality of carbon nanotubes is formed on an upper surface of the un-doped GaN layer. The plurality of carbon nanotubes is spaced from each other to expose a portion of the upper surface of the un-doped GaN layer. The N-type GaN layer is formed on the exposed portion of the upper surface of the un-doped GaN layer and covering the carbon nanotubes therein. | 02-19-2015 |
20150048303 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THEREOF - The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking. | 02-19-2015 |
20150048304 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME - A nitride semiconductor element | 02-19-2015 |
20150048305 | LED DIE AND METHOD OF MANUFACTURING THE SAME - An LED die includes a substrate, a light emitting structure, electrodes, a first transparent protecting layer, a reflection layer, and a second transparent protecting layer. The light emitting structure includes a first semiconductor layer, an active layer, a second semiconductor layer successively formed on the substrate. A part of first semiconductor layer being exposed. A first electrode is formed the first semiconductor layer. A second electrode is formed on the second semiconductor layer. The first transparent protecting layer, the reflection layer, and the second transparent protecting layer successively formed on the first electrode. The present disclosure also provides a method of manufacturing the LED die. | 02-19-2015 |
20150048306 | Gd Doped AlGaN Ultraviolet Light Emitting Diode - A diode comprises nanowires compositionally graded along their lengths with an active region doped with gadolinium sandwiched between first and second compositionally graded Al | 02-19-2015 |
20150048307 | VERTICAL STRUCTURE LEDS - A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface. | 02-19-2015 |
20150048308 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM - A light emitting device including a support substrate, an adhesive layer on the support substrate, a conductive layer on the adhesive layer, a light emitting structure on the conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, a metal layer disposed under the conductive layer and at an adjacent region of the conductive layer, and a passivation layer disposed on a side surface of the light emitting structure, wherein the first electrode is vertically non-overlapped with the conductive layer, wherein the conductive layer includes a first layer and a second layer on the first layer, wherein the second layer directly contacts with the light emitting structure, wherein the metal layer directly contacts with the light emitting structure, wherein the metal layer is expanded to an outer area of the light emitting structure, and wherein the passivation layer is disposed on the metal layer at the outer surface of the light emitting structure. | 02-19-2015 |
20150048309 | Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer - A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range. | 02-19-2015 |
20150053914 | SEMICONDUCTOR STRUCTURE WITH INSULATOR COATING - Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species. The method also involves adding additional amounts of the silicon-containing silica precursor species after initial forming of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals. | 02-26-2015 |
20150053915 | Light Emitting Diode - A light emitting diode includes a substrate, a first semiconductor layer, a luminous layer, a second semiconductor layer, a current diffusion layer, a third semiconductor layer, a first electrode, a second electrode, and an insulation layer. The first semiconductor layer is formed above the substrate. The luminous layer is formed on the first semiconductor layer, and exposes a portion of the first semiconductor layer. The second semiconductor layer is formed on the luminous layer. The current diffusion layer is formed on the second semiconductor layer. The third semiconductor layer is formed on the current diffusion layer. The first electrode is formed on the first semiconductor layer. The second electrode includes a base portion formed on the surface of the substrate, and plural comb structures extending upward vertically. Each tip of the comb structure is in the third semiconductor layer. The insulation layer exposes the tip of each comb structure. | 02-26-2015 |
20150053916 | Gas Phase Enhancement of Emission Color Quality in Solid State LEDs - Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby “down-converting” light from the semiconductor material. | 02-26-2015 |
20150053917 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is provided which has improved light emission efficiency. The semiconductor light emitting device includes an active layer having a quantum well structure. The quantum well structure includes well and barrier layers that are alternately and repeatedly deposited on one another. The well layer is formed of a gallium nitride group semiconductor that contains In. The well layer has a profile of composition ratio of In that includes a first portion, and a second portion that is in contact with the first portion. The concentration of In in the first portion is substantially fixed or reduced along the thickness direction of the well layer from the negative side to the positive side of the piezoelectric field that is produced in the well layer. The concentration of In in the second portion is sharply reduced with respect to the first portion. | 02-26-2015 |
20150053918 | LIGHT-EMITTING DIODE WITH CURRENT-SPREADING REGION - A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer. | 02-26-2015 |
20150053919 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip having a semiconductor layer sequence includes at least one active layer that generates primary radiation; a plurality of conversion layers that at least partially absorb the primary radiation and convert the primary radiation into secondary radiation of a longer wavelength than the primary radiation; and a roughened portion that extends at least into one of the conversion layers, wherein the roughened portion has a random structure, the semiconductor layer sequence is arranged on a carrier, a top side of the semiconductor layer sequence facing away from the carrier is formed by the roughened portion, the at least one active layer is located between the carrier and the conversion layers, and the roughened portion includes a plurality of recesses free of a semiconductor material. | 02-26-2015 |
20150053920 | LED with Current Spreading Layer and Fabrication Method - A lighting emitting diode including: an n side layer and a p side layer formed by nitride semiconductors respectively; an active layer comprising a nitride semiconductor is between the n side layer and the p side layer; wherein, the n-side layer is successively laminated by an extrinsically-doped buffer layer and a compound multi-current spreading layer; the compound multi-current spreading layer is successively-laminated by a first current spreading layer, a second current spreading layer and a third current spreading layer; the first current spreading layer and the third current spreading layer are alternatively-laminated layers comprising a u-type nitride semiconductor layer and an n-type nitride semiconductor layer; the second current spreading layer is a distributed insulation layer formed on the n-type nitride semiconductor layer; and the first current spreading layer is adjacent to the extrinsically-doped buffer layer; and the third current spreading layer is adjacent to the active layer. | 02-26-2015 |
20150060759 | TUNABLE LIGHT-EMITTING DIODE - A method of forming a light-emitting diode including determining a first level of tensile stress to be applied to a base substrate including a plurality of quantum well layers to adjust a band-gap of the base substrate to a predetermined band-gap. The first level of tensile stress is generated in the base substrate by forming a tensile-stressing layer on the base substrate. | 03-05-2015 |
20150060760 | TUNABLE LIGHT-EMITTING DIODE - A light-emitting diode device includes a base substrate including a plurality of quantum well layers, a first electrode on one side of the plurality of quantum well layers, and a second electrode on an opposite side of the plurality of quantum well layers. The device includes a tensile-stressing layer formed on the base substrate and having a thickness and chemical composition configured to generate a first tensile stress in the base substrate, the first compressive stress selected to cause the base substrate to have a predetermined band-gap. | 03-05-2015 |
20150060761 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes a first layer of a first-conductivity type, first and second protrusions each disposed on a first side of the first layer and extending from the first layer in a first direction and spaced apart from each other in a second direction perpendicular to the first direction, a first electrode disposed on the first side of the first layer and between the first and second protrusions, a phosphor layer disposed on a second side of the first layer that is opposite the first side, and a second electrode disposed on each of the first and second protrusions on a side opposite the first layer. The first and second protrusions each includes a second layer having a second-conductivity type, and a light emitting layer disposed between the first layer and the second layer. | 03-05-2015 |
20150060762 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING HOLE INJECTION LAYER - According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type. | 03-05-2015 |
20150060763 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes an n-type semiconductor layer and a first metal layer. The n-type semiconductor layer includes a nitride semiconductor. The n-type semiconductor layer includes a boron-containing region including boron bonded to oxygen. The first metal layer contacts the boron-containing region. | 03-05-2015 |
20150060764 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a nitride semiconductor light emitting device which includes forming an n-type semiconductor layer, forming an active layer on the n-type semiconductor layer, forming a superlattice layer by alternately stacking at least two nitride layers made of In | 03-05-2015 |
20150069321 | LIGHT EMITTING DIODE - A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E | 03-12-2015 |
20150069322 | SEMIPOLAR EMITTER - A light emitting diode is disclosed in the form of a III-V compound semiconductor hetero-epitaxially grown on the (111) crystallographic surface of a silicon substrate. The light emitter consists of a multiple quantum well hetero-structure that has been realized in one or more crystallographic planes that are members of a set of semi-polar crystallographic planes of the III-V material. | 03-12-2015 |
20150069323 | SINGLE PHOTON SOURCE DIE AND METHOD OF MANUFACTURING THE SAME - A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points. | 03-12-2015 |
20150069324 | LED THAT HAS BOUNDING SILICON-DOPED REGIONS ON EITHER SIDE OF A STRAIN RELEASE LAYER - A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second relatively-highly silicon-doped region. The second relatively-highly silicon-doped region is a sublayer of the active layer of the LED. The first relatively-highly silicon-doped region is a sublayer of the N-type layer of the LED. The first relatively-highly silicon-doped region is also separated from the remainder of the N-type layer by an intervening sublayer that is only lightly doped with silicon. The silicon doping profile promotes current spreading and high output power (lumens/watt). The LED has a low reverse leakage current and a high ESD breakdown voltage. The strain release layer has a concentration of indium that is between 5×10 | 03-12-2015 |
20150069325 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device is provided, including a substrate and a light emitting structure on the substrate, comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first and second semiconductor layers. The substrate has at least one side surface extending outwardly. The at least one side surface includes a first portion, a transition portion connected to the first portion, and a second portion connected to the transition portion, the first portion provides a first obtuse inclination angle with reference to the bottom surface of the substrate and the transition portion provides a second obtuse inclination angle with reference to the bottom surface of the substrate, the second obtuse inclination angle is larger than the first obtuse inclination angle. The second portion includes a vertical side surface with reference to the bottom surface of the substrate. | 03-12-2015 |
20150069326 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, and a cross section of each of the three-dimensional nano-structures is M-shaped. | 03-12-2015 |
20150076443 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A light emitting device includes a first layer of a first conductivity type, a second layer of a second conductivity type, a light emitting layer between the first and second layers, a first electrode disposed on a surface of the first layer, and a second electrode disposed on a surface of the second layer and electrically insulated from the first layer. The first layer has first and second regions, each of which contacts the first electrode. A dopant concentration in the first region is less than a dopant concentration in the second region. | 03-19-2015 |
20150076444 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE INCLUDING THE SAME - A semiconductor light emitting element includes a semiconductor substrate including a first region of a first conductivity type. A first semiconductor layer of a second conductivity type is disposed on a first surface of the semiconductor substrate. A second semiconductor layer of the first conductivity type is disposed on the first semiconductor layer with a light emitting layer between the first and second semiconductor layer. A first electrode connects electrically to the first semiconductor layer and a second electrode electrically connects to the second semiconductor layer. A third electrode including a metal is on a second surface of the semiconductor substrate that is opposite the first surface. | 03-19-2015 |
20150076445 | LIGHT-EMITTING DIODES - A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A P-type electrode includes a body part and an extension part, wherein the body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the extension part extends from the body part onto the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the N-type semiconductor layer. An N-type electrode is disposed on the N-type semiconductor layer. Moreover, a current blocking layer is disposed under the P-type electrode. A transparent conductive layer is disposed on a partial upper surface of the P-type semiconductor layer. | 03-19-2015 |
20150076446 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME - Disclosed are a light emitting diode and a method of fabricating the same. The light emitting diode includes a GaN substrate having a plurality of through-holes; a GaN-based semiconductor stack structure placed on the substrate and including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; and a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes. The light emitting diode can reduce crystal defects and prevent reduction in light emitting area. | 03-19-2015 |
20150076447 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride semiconductor light-emitting element includes a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to a p-type nitride semiconductor layer. The first light-emitting layer includes a plurality of first quantum well layers and a first barrier layer provided between the plurality of first quantum well layers. The second light-emitting layer includes a plurality of second quantum well layers and a second barrier layer provided between the plurality of second quantum well layers. The second quantum well layers include a multiple quantum well light-emitting layer thicker than the first quantum well layers. | 03-19-2015 |
20150076448 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes first and second semiconductor layers, and a light emitting unit. The light emitting unit is provided between the first and second semiconductor layers and includes well layers and barrier layers. The barrier layers include p-side and n-side barrier layers, and a first intermediate barrier layer. The n-side barrier layer is provided between the p-side barrier layer and the first semiconductor layer. The first intermediate barrier layer is provided between the barrier layers. The well layers include p-side and n-side well layers, and a first intermediate well layer. The p-side well layer is provided between the p-side barrier layer and the second semiconductor layer. The n-side well layer is provided between the n-side barrier layer and the first intermediate barrier layer. The first intermediate well layer is provided between the first intermediate barrier layer and the p-side barrier layer. | 03-19-2015 |
20150083990 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, a first and second electrodes is provided. The active layer is located between the n-type and p-type semiconductor layers, and includes i quantum wells and (i+1) quantum barrier layers, each quantum well is located between any two of the quantum barrier layers, each of k quantum wells among the i quantum wells is constituted of a light emitting layer and an auxiliary layer, in which an indium concentration of the auxiliary layer is greater than an indium concentration of the light emitting layer, where i and k are natural numbers greater than or equal to 1 and k≦i. The first electrode and second electrodes are located on the n-type semiconductor layer and the p-type semiconductor layer, respectively. | 03-26-2015 |
20150083991 | WHITE LIGHT QUANTUM DOT COMPLEX PARTICLE AND PROCESS FOR PREPARING SAME - A white light quantum dot complex particle, comprising a seed particle ( | 03-26-2015 |
20150083992 | GROUP-III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME AND METHOD OF MANUFACTURING MOUNTING BODY - A method of manufacturing a group-III nitride semiconductor light emitting element includes a first irregularity shape part forming process of sequentially forming an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer on an irregularity substrate to make a laminated body and forming a first irregularity shape part on the n-type semiconductor layer, a first irregularity shape part exposing process of separating the irregularity substrate from the laminated body to expose the first irregularity shape part of the n-type semiconductor layer, and a second irregularity shape part forming process of roughening a surface of the first irregularity shape part of the n-type semiconductor layer to form a second irregularity shape part having fine irregularity on the first irregularity shape part. | 03-26-2015 |
20150083993 | Group III Nitride Semiconductor Light-Emitting Device - The present invention provides a Group III nitride semiconductor light-emitting device having a flat semiconductor layer, in which the stress applied to the light-emitting layer is relaxed. The light-emitting layer of the light-emitting device includes a well layer and a barrier layer comprising an AlGaN layer containing In. The light-emitting device has a pit extending from an n-type semiconductor layer to layers above the light-emitting layer. A pit diameter at an interface between the light-emitting layer and the n-type semiconductor layer is 120 nm to 200 nm. The barrier layer has an In concentration of 6.0×10 | 03-26-2015 |
20150083994 | Group III Nitride Heterostructure for Optoelectronic Device - Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure. | 03-26-2015 |
20150083995 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device package capable of improving luminous efficiency. The light emitting device includes a substrate; a first buffer layer on the substrate; a first insulating layer on the first buffer layer; a second buffer layer on the first insulating layer; a second insulating layer on the second buffer layer; a third buffer layer around the second buffer layer and the insulating layer; and a light emitting structure on the third buffer layer. | 03-26-2015 |
20150083996 | VERTICAL LED CHIP PACKAGE ON TSV CARRIER - A light-emitting device (LED) package component includes a carrier wafer. The carrier wafer includes a first through-substrate via (TSV) configured to electrically connecting features on opposite sides of the carrier wafer. A light-emitting device (LED) is bonded onto the carrier wafer. The LED are electrically connected to the first TSV. A conductive thermal interface material (TIM) is located between, and adjoining, the first TSV and the LED. | 03-26-2015 |
20150083997 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A face-up-type Group III nitride semiconductor light-emitting device includes a growth substrate, an n-type layer, a light-emitting layer, a p-type layer, an n-electrode including a bonding portion and a wiring portion, a p-electrode including a bonding portion and a wiring portion, and a first insulating film. The n-type layer, the light-emitting layer, and the p-type layer are sequentially stacked on the growth substrate, and the n-electrode and the p-electrode are formed on the first insulating film. A groove having a depth extending from a top surface of the p-type layer to the n-type layer is formed in at least one region selected from a region directly below the wiring portion of the n-electrode and a region directly below the wiring portion of the p-electrode. The wiring portion, which is formed in the groove, is located at a level lower than that of the light-emitting layer. | 03-26-2015 |
20150083998 | LIGHT EMITTING DIODE AND METHOD OF FABRICATION THEREOF - A light-emitting diode (LED) element includes a substrate and a GaN layer formed on the substrate. The GaN layer includes a boundary layer including a surface of the GaN opposing the substrate. The surface has a micro-roughening texture and a macro-roughening texture. The boundary layer includes at least one of As, Si, P, Ge, C, B, F, N, Sb, and Xe ions. | 03-26-2015 |
20150090955 | LIGHT EMITTING DEVICE - A light emitting device includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. The active layer is formed of In | 04-02-2015 |
20150102285 | LIGHT-EMITTING DEVICE - A light-emitting device comprises: a light-emitting stack having an active layer; a transparent insulating layer on the light-emitting stack; and an electrode structure having a first electrode on the transparent insulating layer; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the reflectivity of the transparent insulating layer is between 1 and 3.4 both inclusive, and the transmittance of the transparent insulating layer is greater than 80%. | 04-16-2015 |
20150102286 | III-Nitride Quantum Well Structure and a Light-Emitting Unit Using the Same - An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. | 04-16-2015 |
20150108424 | Method to Remove Sapphire Substrate - A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching. | 04-23-2015 |
20150108425 | NANOSHELL, METHOD OF FABRICATING SAME AND USES THEREOF - A method of fabricating a nanoshell is disclosed. The method comprises coating a nanometric core made of a first material by a second material, to form a core-shell nanostructure and applying non-chemical treatment to the core-shell nanostructure so as to at least partially remove the nanometric core, thereby fabricating a nanoshell. The disclosed nanoshell can be used in the fabrication of transistors, optical devices (such as CCD and CMOS sensors), memory devices and energy storage devices. | 04-23-2015 |
20150108426 | METHOD FOR PRODUCING AN ACTIVE ZONE FOR AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP - In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer ( | 04-23-2015 |
20150115217 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus including a substrate including a plurality of pixel areas; a pixel electrode on the substrate; an opposite electrode on the pixel electrode, the opposite electrode transmitting light; an organic light emitting layer between the pixel electrode and the opposite electrode, the organic light emitting layer emitting a first light toward the opposite electrode; a light emitting layer on the opposite electrode, the light emitting layer absorbing a portion of the first light and emitting a second light; and a sealing layer on the light emitting layer, the sealing layer sealing the pixel electrode, the opposite electrode, the organic light emitting layer, and the light emitting layer. | 04-30-2015 |
20150115218 | OPTOELECTRONIC MODULE AND METHOD FOR MANUFACTURING THE SAME - An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on the sapphire substrate in sequence; providing a substrate and forming a metallic adhering layer on the substrate; forming an ohmic contact layer and a reflecting layer on the P-type GaN layer in series; arranging the reflecting layer on the adhering layer; stripping the sapphire substrate and the two doped GaN layers from the N-type GaN layer to form a semiconductor structure; etching a top end of the semiconductor structure to divide the semiconductor structure into a laser LED region and an LED region; forming two N-type electrodes on the LED region and an LED region, respectively. | 04-30-2015 |
20150115219 | SUPERLUMINESCENT DIODE AND METHOD FOR IMPLEMENTING THE SAME - A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode. | 04-30-2015 |
20150115220 | (Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE - A nitride light emitting diode comprising at least one nitride-based active region formed on or above a patterned substrate, wherein the active region is comprised of at least one quantum well structure; and a nitride interlayer, formed on or above the active region, having at least two periods of alternating layers of In | 04-30-2015 |
20150115221 | EFFICIENT LIGHT EXTRACTION FROM WEAKLY-COUPLED DIELECTRIC BUTTES - A light emitting diode (LED) with weakly-coupled dielectric buttes deposited along the surface is disclosed. The buttes improve light extraction from a distributed volume of incoherent sources in a high-index substrate, as well as from light backscattered by a rear metallic contact. A lattice arrangement for the buttes maximizes area coverage, subject to the constraint of weak evanescent wave coupling between them. The butte distribution may be fabricated by epitaxial deposition above a current spreading layer, followed by photolithographic patterning and etching. | 04-30-2015 |
20150123074 | GALLIUM NITRIDE BASED LIGHT EMITTING DIODE - A light emitting diode including a first conductive type semiconductor layer; at least one In | 05-07-2015 |
20150129832 | LIGHT EMITTING DEVICE - Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an Al | 05-14-2015 |
20150129833 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package includes a package substrate, a light emitting device, a resin portion and a light scattering agent. The light emitting device is disposed on the package substrate and includes a plurality of light emitting nanostructures. The resin portion is disposed on the package substrate and seals the light emitting device. The light scattering agent is dispersed in the resin portion and includes a material having a refractive index greater than a refractive index of a material forming the resin portion. | 05-14-2015 |
20150129834 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer, a plurality of light emitting nanostructures disposed on the first conductivity-type semiconductor base layer to be spaced apart from one another, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and a filling layer including a refractive portion disposed between the light emitting nanostructures and a cover portion filled between the light emitting nanostructures and enclosing the refractive portion. | 05-14-2015 |
20150129835 | MULTIPLE QUANTUM WELL SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: an n-type semiconductor layer; a super lattice structure layer formed on the n-type semiconductor layer and including repeatedly-formed first semiconductor layers and second semiconductor layers having a composition with a band gap greater than that of the first semiconductor layer; an electron injection control layer including a first control layer formed on the second semiconductor layer of super lattice structure layer and a second control layer formed on the first control layer; and an MQW light emitting layer formed on the second control layer and including repeatedly-formed barrier layers and quantum well layers. The first control layer has a composition with a band gap smaller than that of the second semiconductor layer of super lattice structure layer. The second control layer has a composition and a thickness same as or smaller than those of the quantum well layer of the MQW light emitting layer. | 05-14-2015 |
20150129836 | CMOS PIXELS COMPRISING EPITAXIAL LAYERS FOR LIGHT-SENSING AND LIGHT EMISSION - Photonic devices monolithically integrated with CMOS are disclosed, including sub-100 nm CMOS, with active layers comprising acceleration regions, light emission and absorption layers, and optional energy filtering regions. Light emission or absorption is controlled by an applied voltage to deposited films on a pre-defined CMOS active area of a substrate, such as bulk Si, bulk Ge, Thick-Film SOI, Thin-Film SOI, Thin-Film GOI. | 05-14-2015 |
20150129837 | LIGHT EMITTING DIODE WITH THREE-DIMENSIONAL NANO-STRUCTURES - A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located both on the first surface and second surface, and a cross section of each of the three-dimensional nano-structure is M-shaped. | 05-14-2015 |
20150137070 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; third semiconductor layer disposed on the second semiconductor layer; and a fourth semiconductor layer disposed on the third semiconductor layer. The second semiconductor layer is formed of an InAlGaN semiconductor layer, the third semiconductor layer is formed of an AlGaN semiconductor layer, and the fourth semiconductor layer is formed of a GaN semiconductor layer. | 05-21-2015 |
20150137071 | Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof - Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced. | 05-21-2015 |
20150144868 | LIGHT-EMITTING ELEMENT - According to one embodiment, a light-emitting element comprises: a first electrically-conductive semiconductor layer, a second electrically-conductive semiconductor layer; and an active layer which is disposed between the first electrically-conductive layer and the second electrically-conductive layer, and in which a well layer and a barrier layer are alternately laminated at least once. The active layer comprises: a first region which is disposed between a neighbouring barrier layer and well layer, and linearly reduces the energy band gap; and a second region which is disposed between a neighbouring well layer and barrier layer, and linearly increases the energy band gap. In the well layer, at least one first region and second region neighbouring the same well layer have mutually different thicknesses. | 05-28-2015 |
20150144869 | GROUP-III NITRIDE STRUCTURE - Group-III nitride structure comprising at least one structure pyramid having a base having at least four sides. The structure pyramid comprises an inner pyramid having a base having at least four sides, which inner pyramid is made of a first group-III nitride. The inner pyramid is coated with an inner first layer made of a second group-III nitride and an outer second layer made of a third group-III nitride, wherein the second group-III nitride has a lower band gap than the first group-III nitride and a lower band gap than the third group-III nitride. The base of the structure pyramid is elongated resulting in an upper ridge creating at least one anisotropic quantum dot. | 05-28-2015 |
20150144870 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present disclosure relates to a semiconductor light emitting device, comprising: a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a growth substrate and composed of a first semiconductor layer, a second semiconductor layer, and an active layer generating light via electron-hole recombination, and wherein a growth substrate-removed surface is formed on the side of the first semiconductor layer; a bonded layer, which bonds the second semiconductor layer side of the plurality of semiconductor layers to the first surface side of the supporting substrate; and a bonded layer-removed surface formed on the first surface, being open towards the plurality of semiconductor layer to supply current thereto. | 05-28-2015 |
20150144871 | Laterally-Injected Light-Emitting Diode and Laser Diode - A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems. | 05-28-2015 |
20150144872 | Optoelectronic Integrated Circuit - A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed. | 05-28-2015 |
20150144873 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device includes a plurality of light emitting nanostructures, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore, a contact electrode disposed on a surface of the second conductivity-type semiconductor layer and formed of a transparent conductive material, a first light transmissive portion filling space between the plurality of light emitting nanostructures and formed of a material having a first refractive index, and a second light transmissive portion disposed on an upper surface of the first light transmissive portion to cover the plurality of light emitting nanostructures and formed of a material having a second refractive index higher than the first refractive index. | 05-28-2015 |
20150144874 | UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers. | 05-28-2015 |
20150144875 | ULTRAVIOLET SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATION METHOD - An ultraviolet semiconductor light emitting device includes: a light-emitting epitaxial layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunnel junction at a non-light-emitting surface of the light-emitting epitaxial layer and having a patterned structure with openings to expose the light-emitting epitaxial layer; an optical phase matching layer over a surface layer of the light-emitting epitaxial layer and transmissive of UV light; and a reflecting layer covering the entire tunneling junction and the optical phase matching layer. A patterned structure is provided over the tunnel junction for full-angle light reflection. Part of the tunneling junction forms ohmic contact with the low work function reflecting metal. The patterned distribution design can effectively reduce the ohmic contact resistance. | 05-28-2015 |
20150295041 | ELECTRONIC DEVICE CONTAINING NANOWIRE(S), EQUIPPED WITH A TRANSITION METAL BUFFER LAYER, PROCESS FOR GROWING AT LEAST ONE NANOWIRE, AND PROCESS FOR MANUFACTURING A DEVICE - The electronic device comprises a substrate ( | 10-15-2015 |
20150295133 | Semiconductor Heterostructure with Stress Management - A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure. | 10-15-2015 |
20150295143 | SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL PAIRING WITH COMPOSITIONAL TRANSITION LAYER - Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell and has a composition intermediate to the first and second semiconductor materials. In another example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A nanocrystalline outer shell surrounds the nanocrystalline shell and is composed of a third semiconductor material. A compositional transition layer is disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell and has a composition intermediate to the second and third semiconductor materials. | 10-15-2015 |
20150295151 | HIGH PERFORMANCE LIGHT EMITTING DIODE WITH VIAS - High performance light emitting diode with vias. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a plurality of filled vias configured to connect a doped region on one side of the light emitting diode to a plurality of contacts on the other side of the light emitting diode. The filled vias may comprise less that 10% of a surface area of the light emitting diode. | 10-15-2015 |
20150311382 | METHOD OF GROWING N-TYPE NITRIDE SEMICONDUCTOR, LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - A light emitting diode includes: an n-type nitride semiconductor layer; an active layer over the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer over the active layer. The n-type nitride semiconductor layer includes: an n-type nitride layer; a first intermediate layer over the n-type nitride layer; an n-type modulation-doped layer over the first intermediate layer. The light emitting diodes includes a second intermediate layer over the n-type modulation-doped layer. The second intermediate layer includes a sub-layer having a higher n-type doping concentration that an n-type doping concentration of the n-type modulation-doped layer. | 10-29-2015 |
20150311383 | FABRICATION OF THIN, FLEXIBLE, AND EFFICIENT LIGHT EMITTING DIODES - A light emitting structure may include a light emitting element(s) arranged in a transparent dielectric material. The light emitting element(s) may include a semiconductor nanostructure arranged in a display orientation different from a growth orientation of the semiconductor nanostructure. The light emitting element(s) may also include a well layer on the semiconductor nanostructure. The light emitting element(s) may further include a capping layer on the well layer. The light emitting structure may also include a contact layer coupled to the light emitting element(s). | 10-29-2015 |
20150311385 | Luminous Source Utilizing Quantum Dot, and Its Manufacturing Method and Application - The present invention relates to the liquid crystal display technique field, and in particular to the improvement of a direct type backlight structure. The present invention provides a luminous source utilizing the quantum dot, which comprises a substrate, the substrate is installed a light bar and a mixed light body surrounding the light bar; there is a quantum dot strip provided on the top of the mixed light body, the emitting light of the light bar is emitted after the quantum dot strip refracting, the light output surface of the quantum dot strip is curved surface. The present invention also provides a manufacturing method of the quantum dot strip and a new direct type backlight composed by utilizing the quantum dot strip. The present invention makes the light output surface of the quantum dot strip be curved surface through improving the structure of the quantum dot strip, making the light output surface of the quantum dot strip be curved surface. Achieving increase of the light diffusion angle of the emitted light running through the quantum dot strip, finally, increasing the light output angle of the luminous source. | 10-29-2015 |
20150311386 | Methods for Making Water Soluble Quantum Dots - A novel quantum dot containing two different metals at non-toxic levels which is capable of narrow bandwidth near infrared emissions at wavelengths of 600-1100 nm. The quantum dot is fabricated via an aqueous method which forms a structure having an inner region of one composition and an outer region of a different composition, wherein the inner region contains at least a first metal and the outer region contains at least a second metal. The quantum dots may be enabled for bioconjugation and may be used in a method for tissue imaging and analyte detection. | 10-29-2015 |
20150311392 | ULTRAVIOLET LIGHT-EMITTING DIODE AND ELECTRIC APPARATUS HAVING THE SAME - To improve light extraction efficiency of a deep ultraviolet light-emitting diode (DUVLED), a typical LED element has a single crystal substrate made of sapphire or AlN, The ultraviolet layer is arranged as a film stack having an n-type conductive layer, a recombination layer, and a p-type conductive layer. A stack of a p-type contact layer and a reflective electrode is disposed on the p-type conductive layer. The ultraviolet emission layer and a p-type contact layer are made of mixed crystal of AlN and GaN. The transmittance for the emission wavelength of the p-type contact layer is increased, and the light extraction efficiency is improved. Also an LED element whose p-type contact layer is configured in a layered structure and whose reflective electrode is patterned is provided. Moreover, an electric appliance having such LED elements is provided. | 10-29-2015 |
20150315463 | NANOPARTICLE PHOSPHOR AND METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR NANOPARTICLE PHOSPHOR AND LIGHT EMITTING ELEMENT CONTAINING SEMICONDUCTOR NANOPARTICLE PHOSPHOR, WAVELENGTH CONVERTER AND LIGHT EMITTING DEVICE - A nanoparticle phosphor includes a nanoparticle composed of a compound semiconductor containing a first metal atom, and an inorganic substance layer provided on at least a part of the surface of the nanoparticle and containing the first metal atom and one or more kinds of hetero atoms. In the inorganic substance layer, the first metal atom is bound to the hetero atom. | 11-05-2015 |
20150318434 | BACKSIDE TRANSPARENT SUBSTRATE ROUGHENING FOR UV LIGHT EMITTING DIODE - In the present invention, a fabrication process for epitaxy onto back-side patterned substrate, where the substrate patterns were defined prior to epitaxy and therefore simplify post growth processing. Specifically, for LED devices, said fabrication process reduces the post growth processing steps required to obtain high LEE due to strong scattering of the back-side features defined on the substrate. The features defined on the back-side patterned substrate scatters strongly with light emitted from the LED devices. Methods of obtaining such features include wet and dry etching. | 11-05-2015 |
20150318437 | SINGLE-PHOTON SOURCE SUITABLE FOR MASS PRODUCTION AND PRODUCTION METHOD - A single-photon source was developed and the source comprises at least one active solid body, which upon excitation with light having photons which each have excitation energy, emits a single photon having lower emission energy within a predefined time period. The active solid body is disposed on a surface or an interface of an electrically operated light source for photons having the excitation energy, so that the solid body can be excited through this surface or interface. It was found that the ease of handling and the ability to miniaturize electrical primary light sources can thus advantageously be combined with the ability of the active solid body to emit exactly one photon. Since the active solid body emits only a single photon within a predefined time period, it is no longer a disadvantage if the light source that is used for excitation emits a large number of photons per unit of time. This opens a way to mass-produce single-photon sources, among other things. | 11-05-2015 |
20150318445 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane; and an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region, wherein the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm; an integral intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 20 and not more than 100; and the Ag electrode has a reflectance of not less than 70%. | 11-05-2015 |
20150318448 | LED Epitaxial Structure and Fabrication Method Thereof - An LED epitaxial structure includes a substrate; a GaN nucleating layer; a superlattice buffer layer comprising a plurality pairs of alternately stacked AlGaN/n-GaN structures; an n-GaN layer; a MQW light-emitting layer, a p-GaN layer and a p-type contact layer. Al(n) represents Al composition value of the n | 11-05-2015 |
20150325745 | THREE-DIMENSIONAL LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core. | 11-12-2015 |
20150333102 | DISPLAY DEVICE - A display device includes a first insulating layer provided on a first surface of a first substrate; a second insulating layer including a plurality of openings exposing a part of the first insulating layer; and a plurality of light emitting elements including a first electrode located in each of the plurality of openings, the first electrode being located on a part of the first insulating layer in the opening and continuously on the second insulating layer and including an inclining surface on a side surface of the second insulating layer; a light emitting layer containing quantum dots, the light emitting layer being located on a part of the first electrode in the opening and including a side surface facing the inclining surface of the first electrode; and a second electrode located on the light emitting layer. | 11-19-2015 |
20150333215 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - Provided is a nitride semiconductor light-emitting diode in which efficiency in a low current density is prevented from being decreased. The nitride semiconductor light-emitting diode comprises a second n-type nitride semiconductor layer. An active layer has a principal surface of an m-plane having an off angle of not less than 0 degrees and not more than 15 degrees. Either of the following requirement (A) and (B) is satisfied; (A) the second n-type nitride semiconductor layer has a donor impurity concentration of not less than 3.0×10 | 11-19-2015 |
20150333217 | DIODE HAVING HIGH BRIGHTNESS AND METHOD THEREOF - A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer. | 11-19-2015 |
20150333218 | UV LIGHT EMITTING DEVICE - A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer. | 11-19-2015 |
20150333219 | SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS COMPRISING InGaN, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND LIGHT EMITTING DEVICES FORMED FROM SUCH SEMICONDUCTOR STRUCTURES - Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer, and at least one barrier layer proximate the at least one well layer. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs. | 11-19-2015 |
20150333222 | EPITAXY STRUCTURE OF A LIGHT EMITTING ELEMENT - An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer. | 11-19-2015 |
20150333223 | Reversely-Installed Photonic Crystal LED Chip and Method for Manufacturing Same - A method of fabricating a flip-chip photonic-crystal light-emitting diode (LED) is disclosed. The method includes the steps of: providing an initial substrate including an epitaxial-growth surface and a light-output surface; performing a nanoimprint process on the epitaxial-growth surface of the initial substrate to form a nano-level patterned substrate; forming a flip-chip LED structure on the epitaxial-growth surface of the nano-level patterned substrate; and performing a nanoimprint process on the light-output surface of the nano-level patterned substrate to form the flip-chip photonic-crystal LED. The formation of the photonic-crystal structure on the light-output surface results in enhanced LED light extraction and emission efficiency. | 11-19-2015 |
20150340551 | SEMICONDUCTOR EPIAXIAL STRUCTURE AND LIGHT-EMITTING DEVICE THEREOF - The present invention discloses an epiaxial structure for semiconductor light-emitting device, comprising an electron injection region, a hole injection region, a multi-quantum well active region, a potential barrier layer for blocking carriers, and one or more band edge shaping layers. The doping type and/or doping concentration of said band edge shaping layers are different from those of the adjacent layers. It may trim the band edge shape of the semiconductor energy band through the local built-in electric field formed as a result of adjusting the doping type, doping concentration and/or layer thickness thereof, such that the carriers in the multi-quantum well active region are distributed uniformly, the overall Auger recombination is decreased, and the effective potential barrier height of the potential barrier layer for blocking carriers is increased to reduce the drain current formed by carriers overflowing out of the multi-quantum well active region, thereby improving internal quantum efficiency. The present invention further discloses a semiconductor light-emitting device that employs said epiaxial structure, which similarly achieves the effects of reduced Auger recombination and/or decreased drain current through the trimming of the band edge shape of the energy band structure by the local built-in electric field, thereby improving internal quantum efficiency of the device. | 11-26-2015 |
20150340552 | OPTOELECTRONIC DEVICE COMPRISING MICROWIRES OR NANOWIRES - The invention relates to an optoelectronic device comprising microwires or nanowires, each having at least one active portion ( | 11-26-2015 |
20150340553 | III-V Group Compound Devices with Improved Efficiency and Droop Rate - A photonic device includes: a first-type III-V group layer; a second-type III-V group layer formed on the first-type III-V group layer; and a multi-quantum well layer disposed between the first-type III-V group layer and the second-type III-V group layer; wherein: the multi-quantum well layer comprises a plurality of active layers interleaved with a plurality of barrier layers such that each barrier layer is separated from adjacent barrier layers by a respective one of the active layer; a material of each barrier layer comprises semiconductor compound devoid of Al element; the barrier layers comprises a first group layers between the first-type III-V group layer and the second-type III-V group layer and a second group layers between the second-type III-V group layer and the first group layers, and a thickness of each barrier layer of the first group layers is greater than that of each barrier layer of the second group layers; and the barrier layers of the first group layers comprise uniform thickness. | 11-26-2015 |
20150340558 | LIGHT EMITTING DIODE CHIP - A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface, wherein an area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, wherein A1 and A2 satisfies the relation of 0.1≦A2/(A1+A2)≦0.5. The light emitting diode element layer is disposed on the growth surface of the substrate. | 11-26-2015 |
20150349195 | FLIP-CHIP LED AND FABRICATION METHOD THEREOF - A flip-chip LED and a method for forming the LED are disclosed. The method includes: providing a substrate and depositing on the substrate an epitaxial layer including, from the bottom upward, an n-type GaN layer, a multi-quantum well active layer, and a p-type GaN layer; etching the epitaxial layer to form an array of openings exposing the n-type GaN layer; forming a first metal layer on the p-type GaN layer; annealing the first metal layer to induce self-assembly thereof; etching the p-type GaN layer by using the first metal layer as a mask such that an array of holes formed therein; and depositing a second metal layer over the array of holes, the second metal layer and the first metal layer form a metal reflector layer. The design can result in an improvement in the light extraction efficiency of the LED. | 12-03-2015 |
20150349197 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer. | 12-03-2015 |
20150349199 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×10 | 12-03-2015 |
20150349203 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view. | 12-03-2015 |
20150357373 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - The present invention provides an array substrate and a manufacturing method thereof and a display device, belonging to the field of display technology and solving the problems that the display quality is reduced and the normal watching is affected due to alignment shifting during alignment in an existing thin film transistor liquid crystal display. The array substrate of the present invention includes a plurality of sub-pixel units, wherein a plurality of light forming units corresponding to the sub-pixel units are arranged on a light-exiting surface of the array substrate, and each of the light forming unit is configured to form light of a color of the sub-pixel units corresponding thereto. When the array substrate of the present invention is applied to the display device, the display quality of the display device may be improved. | 12-10-2015 |
20150357515 | THIN LIGHT EMITTING DIODE AND FABRICATION METHOD - A method for fabrication a light emitting diode (LED) includes forming alternating material layers on an LED structure, formed on a substrate, to form a reflector on a back side opposite the substrate. A handle substrate is adhered to a stressor layer deposited on the reflector. The LED structure is separated from the substrate using a spalling process to expose a front side of the LED structure. | 12-10-2015 |
20150364523 | DISPLAY DEVICE - A display device includes a pixel part provided with a plurality of pixels, and a light emitting device provided in the pixel, wherein the light emitting device includes a light emitting layer including a quantum dot, a first electrode provided on one surface of the light emitting layer, an insulation layer provided between the light emitting layer and the first electrode, and a second electrode provided between the light emitting layer and the insulation layer, and at least one end part of the second electrode layer is provided over the first electrode. | 12-17-2015 |
20150364645 | MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other. | 12-17-2015 |
20150364648 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE - A semiconducting structure configured to emit electromagnetic radiation. The structure includes a first zone and a second zone with first and second types of conductivities respectively opposite to each other, the first and second zones being connected to each other to form a semiconducting junction. The first zone includes at least a first and a second part, the first and the second parts being separated from each other by an intermediate layer, as a spreading layer, extending approximately parallel to a junction plane along a major part of the junction. The spreading layer can cause spreading of carriers in the plane of the spreading layer. | 12-17-2015 |
20150364649 | NITRIDE SEMICONDUCTOR DEVICE - In the nitride semiconductor device of the present invention, an active layer | 12-17-2015 |
20150372189 | III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - To provide a III nitride semiconductor light emitting device in which the formation of cracks in an active layer is suppressed and the light output power is improved, a III nitride semiconductor light emitting device has an n-type cladding layer, an active layer, and a p-type cladding layer in order. The active layer has a multiple quantum-well structure in which barrier layers made of Al | 12-24-2015 |
20150372195 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer. | 12-24-2015 |
20150380459 | MESA STRUCTURE DIODE WITH APPROXIMATELY PLANE CONTACT SURFACE - Electronic device with mesa structure diodes connected in series, each comprising:
| 12-31-2015 |
20150380608 | Diode for a Printable Composition - An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between about 2.5 to 7 microns; a first terminal coupled to the light emitting region on a first side, the first terminal having a height between about 1 to 6 microns; and a second terminal coupled to the light emitting region on a second side opposite the first side, the second terminal having a height between about 1 to 6 microns. | 12-31-2015 |
20150380653 | Electro-Luminescence Display Panel and Fabrication Method Thereof, Display Device - Embodiments of the disclosure provide an electro-luminescence display panel and a fabrication method thereof, and a display device. The electro-luminescence display panel comprises a plurality of light-emitting units. Each light-emitting unit comprises a plurality of sub light-emitting units for displaying different colors, an electro-luminescence structure is provided in each of the sub light-emitting units, and the electro-luminescence structure comprises a quantum dot light-emitting layer. | 12-31-2015 |
20150380654 | LIGHT EMITTING DEVICE, PRODUCTION METHOD THEREOF, AND DISPLAY PANEL - The present disclosure provides a light emitting device, a production method thereof, and a display panel, for simplifying the production process of light emitting device and improving the performance of the light emitting device. The light emitting device in the present disclosure comprises a white light emitting layer comprising a polyfluorene blue light material, and red light quantum dots and green light quantum dots doped in the polyfluorene blue light material. | 12-31-2015 |
20150380671 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - An array substrate, manufacturing method thereof and a display device are provided. The array substrate comprises thin film transistor units ( | 12-31-2015 |
20160005918 | METHOD FOR THE PRODUCTION OF MONOLITHIC WHITE DIODES - The invention relates to a method for the production of a light-emitting diode, characterised in that the method comprises a step of preparing a light-emitting layer ( | 01-07-2016 |
20160005919 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor deep ultraviolet light emitting device having a superior light emission efficiency is provided. A nitride semiconductor light emitting device having emission wavelength of 200 to 300 nm includes an n-type layer consisting of a single layer or a plurality of layers having different band gaps, a p-type layer consisting of a single layer or a plurality of layers having different band gaps, an active layer arranged between the n-type layer and the p-type layer, and an electron blocking layer having a band gap larger than any band gap of layers composing the active layer and the p-type layer. The p-type layer includes a first p-type layer having a band gap larger than a band gap of a first n-type layer which has a smallest band gap in the n-type layer. The electron blocking layer is arranged between the active layer and the first p-type layer. | 01-07-2016 |
20160005921 | Bi-directional dual-color light emitting device and systems for use thereof - An LED optimized for use in low-cost gas or other non-solid substance detection systems, emitting two wavelengths (“colors”) of electromagnetic radiation from the same aperture is disclosed. The LED device emits a light with a wavelength centered on an absorption line of the target detection non-solid substance, and also emits a reference line with a wavelength that is not absorbed by a target non-solid substance, while both wavelengths are transmitted through the atmosphere with low loss. Since the absorption and reference wavelengths are emitted from the same exact aperture, both wavelengths can share the same optical path, reducing the size and cost of the detector while also reducing potential sources of error due to optical path variation. | 01-07-2016 |
20160005989 | LIGHT-EMITTING COMPOSITE FILM, ITS MANUFACTURE METHOD, AND WHITE LIGHT ORGANIC ELECTROLUMINESCENT DEVICE - Disclosed are a light-emitting composite film, its manufacture method, and a white light organic electroluminescent device. Said light-emitting composite film comprises a first light-emitting layer and a second light-emitting layer. The first light-emitting layer comprises polyfluorene or polyfluorene derivatives, and the second light-emitting layer comprises quantum dots. A variety of color gamut and an improved brightness of devices can be achieved by the light-emitting composite film. | 01-07-2016 |
20160013170 | ACTIVE MATRIX EMISSIVE MICRO LED DISPLAY | 01-14-2016 |
20160013366 | NANOSTRUCTURE SEMICONDUCTOR LIGHT-EMITTING DEVICE | 01-14-2016 |
20160013388 | LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE INCLUDING THE SAME | 01-14-2016 |
20160020201 | Optoelectronic Semiconductor Chip and Method for Fabrication Thereof - An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region. | 01-21-2016 |
20160020358 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - There is provided a semiconductor light emitting device | 01-21-2016 |
20160020360 | ENGINEERED SUBSTRATE ASSEMBLIES WITH EPITAXIAL TEMPLATES AND RELATED SYSTEMS, METHODS, AND DEVICES - Engineered substrates having epitaxial templates for forming epitaxial semiconductor materials and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a first semiconductor material at a front surface of a donor substrate. The first semiconductor material is transferred to first handle substrate to define a first formation structure. A second formation structure is formed to further include a second semiconductor material homoepitaxial to the first formation structure. The method can further include transferring the first portion of the second formation structure to a second handle substrate such that a second portion of the second formation structure remains at the first handle substrate. | 01-21-2016 |
20160027960 | LIGHT-EMITTING DEVICES AND DISPLAYS WITH IMPROVED PERFORMANCE - Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm | 01-28-2016 |
20160027961 | METHODS AND DEVICES FOR SOLID STATE NANOWIRE DEVICES - Solid state sources offers potential advantages including high brightness, electricity savings, long lifetime, and higher color rendering capability, when compared to incandescent and fluorescent light sources. To date however, many of these advantages, however, have not been borne out in providing white LED lamps for general lighting applications. The inventors have established that surface recombination through non-radiative processes results in highly inefficient electrical injection. Exploiting in-situ grown shells in combination with dot-in-a-wire LED structures to overcome this limitation through the effective lateral confinement offered by the shell the inventors have demonstrated core-shell dot-in-a-wire LEDs, with significantly improved electrical injection efficiency and output power, providing phosphor-free InGaN/GaN nanowire white LEDs operating with milliwatt output power and color rendering indices of 95-98. Additionally, the inventors demonstrate efficient UV nanowire LEDs for medical applications as well as the non-degraded growth of nanowire LEDs on amorphous substrates. | 01-28-2016 |
20160027962 | UV LIGHT EMITTING DEVICES AND SYSTEMS AND METHODS FOR PRODUCTION - A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures. | 01-28-2016 |
20160027963 | OPTICAL ELEMENTS AND ELECTRONIC DEVICES INCLUDING THE SAME - An optical element includes a plurality of nanowires disposed in the form of an array and a light emitting material disposed on the nanowires, where the nanowires are longitudinally aligned in the array to linearly polarize at least a portion of light emitted from the light emitting material, and an electronic device includes the optical element. | 01-28-2016 |
20160027964 | UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity. | 01-28-2016 |
20160027966 | Porous Quantum Dot Carriers - Embodiments of a quantum dot carrier, a method of making a quantum dot carrier, and a quantum dot enhancement film are described. The quantum dot carrier includes a porous material, a plurality of quantum dots and a dispersing material for dispersing the quantum dots within the porous material. The porous material includes a plurality of pores while the quantum dots are disposed within the plurality of pores. | 01-28-2016 |
20160027978 | LIGHT EMITTING DIODE (LED) DIE HAVING STRAP LAYER AND METHOD OF FABRICATION - A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer via, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the second type semiconductor layer. | 01-28-2016 |
20160035934 | NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME - A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×10 | 02-04-2016 |
20160035935 | ULTRAVIOLET LIGHT EMITTING DEVICE SEPARATED FROM GROWTH SUBSTRATE AND METHOD OF FABRICATING THE SAME - A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including Al | 02-04-2016 |
20160035941 | HIGH INDEX DIELECTRIC FILM TO INCREASE EXTRACTION EFFICIENCY OF NANOWIRE LEDS - Various embodiments include semiconductor devices, such as nanowire LEDs, that include a plurality of first conductivity type semiconductor nanowire cores located over a support, a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, and a layer of a high index of refraction material over at least a portion of a surface of at least one of the nanowire cores and the shells, wherein the high index of refraction material has an index of refraction that is between about 1.4 and about 4.5. Light extraction efficiency may be improved. | 02-04-2016 |
20160043272 | MONOLITHIC LIGHT-EMITTING DEVICE - A Light-emitting device comprises a monolithic matrix of III-nitride elements, the matrix comprising at least one first stack of quantum wells or of planes of quantum dots able to emit photons at at least one second wavelength by optical pumping by the photons emitted by the first stack, and a region separating the two stacks, and first and second electrodes arranged to allow an electrical current to pass through the stacks, the second stack is n-doped, the separating region comprises a tunnel junction having an n | 02-11-2016 |
20160043273 | NITRIDE SEMICONDUCTOR - To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 μm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness. | 02-11-2016 |
20160043275 | P-TYPE DOPING LAYERS FOR USE WITH LIGHT EMITTING DEVICES - A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits. | 02-11-2016 |
20160043276 | HIGH POWER LIGHT EMITTING DEVICE AND METHOD OF MAKING THE SAME - Disclosed herein are a light emitting device and a method of making the same. The light emitting device includes: a substrate including a first lead and a second lead; a light emitting diode disposed over the first lead of the substrate, including a second conductive-type semiconductor layer, an active layer, and a first conductive-type semiconductor layer, and emit near ultraviolet light; and a wavelength conversion unit disposed over the light emitting diode and spaced apart from the light emitting diode, wherein the light emitting structure has semi-polar or non-polar characteristics, the wavelength conversion unit has a multi-layered structure including a first phosphor layer and a second phosphor layer, and the light emitting diode is driven at a current density which is equal to or greater than 350 mA/mm | 02-11-2016 |
20160043278 | NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS - A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs. | 02-11-2016 |
20160043279 | SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME, AND LIGHTING DEVICE COMPRISING THE SAME - A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula Al | 02-11-2016 |
20160043287 | NETWORK OF SEMICONDUCTOR STRUCTURES WITH FUSED INSULATOR COATING - Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a semiconductor structure includes an insulator network. A plurality of discrete semiconductor nanocrystals is disposed in the insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network. | 02-11-2016 |
20160049544 | LIGHT-EMITTING DIODE WITH MULTIPLE QUANTUM WELLS AND ASYMMETRIC P-N JUNCTION - A light-emitting diode including: a first n-doped semiconductor layer configured to form a cathode, and a second p-doped semiconductor layer configured to form an anode, and together forming a p-n junction of the diode; an active zone located between the first layer and the second layer, including at least two emissive layers including a semiconductor capable of forming quantum wells, and a plurality of semiconductor barrier layers such that each emissive layer is located between two barrier layers; an n-doped semiconductor buffer layer located between the first layer and the active zone, the n-dope semiconductor of the buffer layer having a band gap energy less than or equal to about 97% of the band gap energy of the p-doped semiconductor of the second layer. | 02-18-2016 |
20160049545 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed is a light emitting device. The light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. The nano-structure includes a graphene layer disposed under the first semiconductor layer to make contact with the first semiconductor layer; and a plurality of nano-textures extending from a top surface of the graphene layer to the first semiconductor layer and contacted with the first semiconductor layer. | 02-18-2016 |
20160049546 | LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode on a part of the first semiconductor layer, an electrode layer on the second conductive semiconductor layer, an insulating layer on the electrode layer, a second electrode on the electrode layer, a support member on the insulating layer, a first connection electrode connected to the first electrode, and a second connection electrode connected to the second electrode. The insulating layer is disposed on a side surface of the light emitting structure and the part of the first semiconductor layer. The insulating layer includes a first layer and a second layer having a different material from the first layer. The first layer of the insulating layer has a refractive index different from the second layer of the insulating layer. | 02-18-2016 |
20160049551 | Device with Inverted Large Scale Light Extraction Structures - An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface. | 02-18-2016 |
20160049553 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode. | 02-18-2016 |
20160049563 | VERTICAL LIGHT EMITTING DIODE WITH PHOTONIC NANOSTRUCTURES AND METHOD OF FABRICATION THEREOF - There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer. There is also provided a vertical light emitting diode with the self-assembly derived ordered nanoparticles. | 02-18-2016 |
20160056324 | LIGHT ENHANCEMENT OF LIGHT EMITTING DIODES - A multi-layered semiconductor die having an ITO layer being the topmost layer with a predetermined and generally uniform thickness. A ZnO seed layer with a predetermined and generally uniform thickness is sputtered the ITO layer, forming a generally roof shingle pattern with the ITO layer. The seed layer has a periphery having a generally beveled edge, which is operable to enhance light emitted by a light source. A ZnO nanostructure layer is deposited on top of the seed layer including at least two or more nanocone arrays. The nanocone arrays are configured to have bases and tips and the bases are configured to be in close proximity so as to be almost touching but not connected. Gaps are formed between each tip of each nanocone array. The nanostructure being operable to enhance light dispersion of the light source. | 02-25-2016 |
20160056325 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of Al | 02-25-2016 |
20160056326 | Optoelectronic Semiconductor Chip and Method for the Production Thereof - A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip. | 02-25-2016 |
20160056327 | NITRIDE LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - Provided is a nitride light emitting element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. A nitride light emitting element | 02-25-2016 |
20160056328 | GREEN-LIGHT EMITTING DEVICE INCLUDING QUATERNARY QUANTUM WELL ON VICINAL C-PLANE - Example embodiments relate to a green-light emitting device including a quaternary quantum well on a vicinal c-plane. The light-emitting device includes a substrate having a vicinal c-plane surface and a light-emitting layer on the vicinal c-plane surface of the substrate. The light-emitting layer includes a quantum well layer of Al | 02-25-2016 |
20160056329 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type separated from the first semiconductor layer in a first direction, a light emitting layer provided between the first and second semiconductor layers, and a first intermediate unit provided between the first semiconductor layer and the light emitting layer. The light emitting layer includes a well layer including a nitride semiconductor including In. The first intermediate unit includes stacked bodies. The stacked bodies are arranged in the first direction. Each of the stacked bodies includes a first layer of In | 02-25-2016 |
20160056330 | LIGHT-EMITTING DEVICE COMPRISING ACTIVE NANOWIRES AND CONTACT NANOWIRES AND METHOD OF FABRICATION - A light-emitting device comprises a set of nanowires over the whole surface of a substrate, comprising at least a first series of first nanowires and a second series of second nanowires; the first series comprising first nanowires emitting light under electrical control, connected between a first and a second type of electrical contact to emit light under electrical control, the first nanowires covered by at least one conducting layer transparent at the wavelength of the light-emitting device, layer in contact with the first type of electrical contact; the second series comprising second nanowires, encapsulated in a layer of metal allowing the first electrical contact to be formed; the second electrical contact being on the back face of the substrate, opposite to the face comprising the nanowires, and provided by a conducting layer facing the first series of nanowires. A method of fabrication of the light-emitting device is provided. | 02-25-2016 |
20160056331 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region. | 02-25-2016 |
20160056332 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer. | 02-25-2016 |
20160056338 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conductive semiconductor layer. | 02-25-2016 |
20160056399 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus including a substrate including a plurality of pixel areas; a pixel electrode on the substrate; an opposite electrode on the pixel electrode, the opposite electrode transmitting light; an organic light emitting layer between the pixel electrode and the opposite electrode, the organic light emitting layer emitting a first light toward the opposite electrode; a light emitting layer on the opposite electrode, the light emitting layer absorbing a portion of the first light and emitting a second light; and a sealing layer on the light emitting layer, the sealing layer sealing the pixel electrode, the opposite electrode, the organic light emitting layer, and the light emitting layer. | 02-25-2016 |
20160064596 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device including a substrate; a first conductivity semiconductor layer disposed on the substrate; a first barrier disposed on the first conductivity semiconductor layer; a well disposed on the first barrier and including a first region having a first energy gap and a second region having a second energy gap and closer to the semiconductor layer than the first region; a second barrier disposed on the well; and a second conductivity semiconductor layer disposed on the second barrier; wherein the first energy gap decreases along a stacking direction of the light-emitting device and has a first gradient, the second energy gap increases along the stacking direction and has a second gradient, and an absolute value of the first gradient is smaller than an absolute value of the second gradient. | 03-03-2016 |
20160064598 | ULTRAVIOLET LIGHT-EMITTING DEVICE - Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm. | 03-03-2016 |
20160064599 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND OPTICAL COUPLING DEVICE - A semiconductor light-emitting element includes a semiconductor stacked body that includes a light emitting layer in which n well layers (where n is, for example, an integer of 1 to 10) formed of In | 03-03-2016 |
20160064600 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode. The pn light-emitting body includes a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit a light beam having an energy value higher than an electron trapping level existing in the semiconductor stacked body, in which the p-type nitride semiconductor layer of the pn light-emitting body is electrically connected to the gate electrode, and functions as a gate of the transistor. | 03-03-2016 |
20160064601 | Deep Ultraviolet Light Emitting Diode - A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. | 03-03-2016 |
20160064607 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device may include: a base layer formed of a first conductivity-type semiconductor material; an insulating layer disposed on the base layer and having a plurality of openings exposing portions of the base layer; a plurality of nanocores disposed on the exposed portions of the base layer and formed of a first conductivity-type semiconductor material, each of which including a tip portion having a crystal plane different from that of a side surface thereof; a first high resistance layer disposed on the tip portion of the nanocore and formed of an oxide containing an element which is the same as at least one of elements constituting the nanocore; an active layer disposed on the first high resistance layer and the side surface of the nanocore; and a second conductivity-type semiconductor layer disposed on the active layer. | 03-03-2016 |
20160064608 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer. | 03-03-2016 |
20160064609 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes. | 03-03-2016 |
20160064613 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a first electrode, a second electrode and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure to emit out from the top of the epitaxial structure. This disclosure also relates to a method for manufacturing the light emitting diode. The light emitting diode and the method help solve the problem of low light efficiency of the light emitting diode. | 03-03-2016 |
20160064681 | LIGHT EMTTING DEVICE USING GRAPHENE QUANTUM DOT AND PREPARING METHOD OF THE SAME - The present disclosure relates to a light emitting device using graphene quantum dot and a preparing method of the light emitting device using graphene quantum dot. | 03-03-2016 |
20160072004 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed therebetween; a first electrode disposed on the light emitting structure to be electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the light emitting structure to be electrically connected to the second conductivity-type semiconductor layer. The second electrode includes a first layer disposed on the second conductivity-type semiconductor layer, and a second layer disposed on the first layer, having a sheet resistance higher than that of the first layer, and having a thickness less than that of the first layer. | 03-10-2016 |
20160072008 | SURFACE-PASSIVATED SILICON QUANTUM DOT PHOSPHORS - Phosphors formed using silicon nanoparticles are provided. The phosphors exhibit bright fluorescence and high quantum yield, making them ideal for lighting applications. Methods for making the silicon phosphors are also provided, along with lighting devices that incorporate the silicon phosphors. | 03-10-2016 |
20160072009 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a silicon substrate, an aluminum nitride layer and a plurality of grading stress buffer layers. The aluminum nitride layer is disposed on the silicon substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al | 03-10-2016 |
20160072010 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a substrate, an aluminum nitride layer, plural of grading stress buffer layers and a superlattice structure layer. The aluminum nitride layer is disposed on the substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al | 03-10-2016 |
20160072011 | LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME - Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode. | 03-10-2016 |
20160072015 | VERTICAL ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a vertical ultraviolet light emitting device including: a p-type semiconductor layer including Al; an active layer positioned on the p-type semiconductor layer and including the Al; an n-type semiconductor layer positioned on the active layer and including the Al; a metal contact layer positioned on the n-type semiconductor layer and doped with an n type; and a pad formed on the metal contact layer, wherein the metal contact layer has an Al content lower than that of the n-type semiconductor layer, and a method for manufacturing the same. According to the exemplary embodiments of the present invention, the metal contact layer is formed on the n-type semiconductor layer to allow the metal contact layer instead of the n-type semiconductor layer including AlGaN to act as the contact layer, thereby effectively improving the n type contact characteristics of the vertical ultraviolet light emitting device. | 03-10-2016 |
20160079316 | LIGHT EMITTING DEVICE INCLUDING TANDEM STRUCTURE - A light emitting device comprising: a pair of electrodes; two or more light emitting elements disposed between the electrodes in a stacked arrangement, wherein a light emitting element comprises a layer comprising an emissive material; and a charge generation element disposed between adjacent light emitting elements in the stacked arrangement, the charge generation element comprising a first layer comprising an inorganic n-type semiconductor material, and a second layer comprising a hole injection material. A charge generation element is also disclosed. | 03-17-2016 |
20160079469 | LIGHT EMITTING DIODE CHIP AND METHOD OF MANUFACTURING SAME - A light emitting diode (LED) chip includes a first semiconductor layer, a first light emitting layer formed on the first semiconductor layer, a second light emitting layer formed on the first light emitting layer, and a second semiconductor layer formed on the second light emitting layer. The first light emitting layer emits light having a first color. The second light emitting layer emits light having a second color different from the first color. | 03-17-2016 |
20160079470 | OPTOELECTRONIC GAN-BASED COMPONENT HAVING INCREASED ESD RESISTANCE VIA A SUPERLATTICE AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic component includes a semiconductor layer structure having a quantum film structure, and a p-doped layer arranged above the quantum film structure, wherein the p-doped layer includes at least one first partial layer and a second partial layer, and the second partial layer has a higher degree of doping than the first partial layer. | 03-17-2016 |
20160079471 | UV LIGHT EMITTING DEVICES AND SYSTEMS AND METHODS FOR PRODUCTION - A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures. | 03-17-2016 |
20160079478 | SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A semiconductor light emitting device package may include: a package body having first and second electrode structures; and a light emitting diode chip mounted on the second electrode structure of the package body, the light emitting diode chip including: a support substrate, a light emitting structure including a second conductivity type semiconductor layer, an active layer and a first conductivity type semiconductor layer sequentially stacked on the support substrate, a transparent electrode layer disposed on the first conductivity type semiconductor layer, and an insulating layer disposed on at least a side surface of the light emitting structure. The transparent electrode layer and the first electrode structure may be connected to each other by a side electrode disposed on a side surface of the light emitting diode chip. | 03-17-2016 |
20160079493 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device includes a frame, a light emitting element provided above the frame and including a substrate, a light emitting layer provided above the substrate, a first reflective layer provided on a bottom surface of the substrate, a second reflective layer provided on a side surface of the substrate, and an electrode, and a bonding wire with one end electrically connected to the electrode and another end electrically connected to the frame. | 03-17-2016 |
20160079502 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a semiconductor light emitting element includes a semiconductor layer, a first conductive layer, and a second conductive layer. The second conductive layer is provided between the semiconductor layer and the first conductive layer. A light transmittance of the second conductive layer is higher than a light transmittance of the first conductive layer. An extinction coefficient of the second conductive layer is 0.005 or less. | 03-17-2016 |
20160087143 | HIGH SPEED SURFACE PLASMON COUPLED LIGHT EMITTING DIODES - A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped layer on the active layer, and a metal layer on the second-doped layer. The second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion. The first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED. The second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED. | 03-24-2016 |
20160087144 | SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength. | 03-24-2016 |
20160087145 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: a pit formation layer formed on the first semiconductor layer and having a pyramidal pit; and an active layer formed on the pit formation layer and having a flat portion and an embedded portion which is formed so as to embed the pit. The active layer has a multi-quantum well structure having a well layer and a barrier layer laminated alternately in which each well layer and each barrier layer lie one upon another. The flat portion has a flat well portion corresponding to the well layer. The embedded portion has an embedded well portion corresponding to the well layer. The embedded well portion has a ring portion which is formed in an interface with the flat well portion so as to surround the threading dislocation. The ring portion has a band gap smaller than that of the flat well portion. | 03-24-2016 |
20160087146 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: a pit formation layer formed on a first semiconductor layer and having a pyramidal pit; an active layer formed on the pit formation layer and having an embedded portion formed so as to embed the pit. The active layer has a multi-quantum well structure having at least one pair of well layer and barrier layer laminated alternately. The embedded portion has at least one embedded well portion corresponding to the well layer respectively and at least one embedded barrier portion corresponding to the barrier layer respectively. Each of the embedded well portion and the embedded barrier portion is configured such that a second apex angle of the embedded well portion is smaller than a first apex angle of the embedded barrier portion wherein the embedded well portion is subsequently formed on the embedded barrier portion. | 03-24-2016 |
20160087147 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: a pit formation layer having a pyramidal pit caused by a threading dislocation generated in the first semiconductor layer; an active layer; and an electron blocking layer formed on the active layer to cover the recess portion. The active layer is formed on the pit formation layer and having an embedded portion formed so as to embed the pit and a recess portion formed on a surface of the embedded portion to correspond to the pit. The recess portion of the active layer has an apex formed at a position existing in a layered direction of the active layer within the active layer. | 03-24-2016 |
20160087148 | NON-METALLIC SEMICONDUCTOR QUANTUM DOT AND METHOD OF CARRYING OUT CHEMICAL REACTION OR PHOTOLUMINESCENCE REACTION BY USING THE SAME - A non-metallic semiconductor quantum dot is provided with a non-metallic substrate, and has a particle size ranged from 0.3 to 100 nm. A method of carrying out a chemical reaction or a photoluminescence reaction by using the non-metallic semiconductor quantum dot is also provided. A redox reaction of a target sample is carried out, an active substance is generated, or an electron-hole pair is produced from the non-metallic semiconductor quantum dot by providing the non-metallic semiconductor quantum dot with a predetermined energy. Photons are released by the combination of the electron-hole pair so as to perform the photoluminescence reaction. | 03-24-2016 |
20160087151 | LIGHT EMITTING DIODE DIE AND MANUFACTURING METHOD THEREOF - An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die. | 03-24-2016 |
20160087154 | NITRIDE SEMICONDUCTOR STRUCTURE - A nitride semiconductor structure including a substrate, a first type nitride semiconductor layer disposed on the substrate, an active layer disposed between the substrate and the first type nitride semiconductor layer and a second type nitride semiconductor layer disposed between the substrate and the active layer is provided. The active layer includes a first multiple quantum well structure including a plurality of first quantum well layers and a plurality of first barrier layers staggered with each other, and a second multiple quantum well structure including a plurality of second quantum well layers and a plurality of second barrier layers staggered with each other. A second type dopant is doped into at least one of the second barrier layers, and a concentration of the second dopant in the second barrier layer is higher than that of the second dopant in the second type nitride semiconductor layer. | 03-24-2016 |
20160087160 | III-V PHOTONIC INTEGRATED CIRCUITS ON SILICON SUBSTRATE - A semiconductor device including a substrate structure including a semiconductor material layer that is present directly on a buried dielectric layer in a first portion of the substrate structure and an isolation dielectric material that is present directly on the buried dielectric layer in a second portion of the substrate structure. The semiconductor device further includes a III-V optoelectronic device that is present in direct contact with the isolation dielectric material in a first region of the second portion of the substrate structure. A dielectric wave guide is present in direct contact with the isolation dielectric material in a second region of the second portion of the substrate structure. | 03-24-2016 |
20160091641 | COLOR FILTER AND DISPLAY PANEL USING SAME - A color filter of display panel for converting dual band white backlight to light with three-primary colors. The color filter includes a plurality of first filtering parts, a plurality of second filtering parts, and a plurality of quantum dot blocks. The first filtering parts have a first primary color and allow light having a first wavelength corresponding to the first primary color to pass therethrough. The second filtering parts have a second primary color and selectively allow light having a second wavelength corresponding to the second primary color to pass therethrough. The quantum dot block converting light having a wavelength smaller than a third wavelength corresponding to a third primary color to light having the second wavelength. | 03-31-2016 |
20160093665 | MONOLITHIC IMAGE CHIP FOR NEAR-TO-EYE DISPLAY - A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap. | 03-31-2016 |
20160093667 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE ARRAY - A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer. | 03-31-2016 |
20160093773 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The second electrode includes an ohmic electrode contacting the second semiconductor layer, and a semiconductor electrode made of a semiconductor layer contacting the ohmic electrode. | 03-31-2016 |
20160099384 | Light Emitting Device - A light emitting device includes a light emitting structure having a plurality of light emitting regions including a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode in one of the light emitting regions, a second electrode in another of the light emitting regions, and at least one connection electrode to sequentially connect the light emitting regions in series. The light emitting regions connected in series are divided into 1st to ith light emitting region groups. Areas of light emitting regions that belong to different groups are different. An area of a light emitting region which is more frequently used among the plurality of light emitting regions is larger than an area of a light emitting region which is less frequently used among the plurality of light emitting regions. | 04-07-2016 |
20160104777 | Zero-Dimensional Electron Devices and Methods of Fabricating the Same - A semiconductor device comprises a substrate and quantum dots, wherein a peak emission of the quantum dots has a FWHM of less than 20 meV when the semiconductor is measured at a temperature of 4 Kelvin. | 04-14-2016 |
20160104784 | Ohmic Contact to Semiconductor - A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged. | 04-14-2016 |
20160111405 | METHOD FOR INTEGRATING A LIGHT EMITTING DEVICE - Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer. | 04-21-2016 |
20160111593 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME - An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed. | 04-21-2016 |
20160111594 | Optoelectronic Component And Method For The Production Thereof - An optoelectronic device ( | 04-21-2016 |
20160111595 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region. | 04-21-2016 |
20160111613 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME - A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer. | 04-21-2016 |
20160118534 | Semiconductor Layer Including Compositional Inhomogeneities - A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer. | 04-28-2016 |
20160118535 | Metallic Contact for Optoelectronic Semiconductor Device - A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact. | 04-28-2016 |
20160118536 | Semiconductor Structure with Inhomogeneous Regions - A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device. | 04-28-2016 |
20160118537 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element comprises: a first semiconductor layer, an active layer having a multiple quantum well structure in which a plurality of well layers and a plurality of barrier layers are alternately layered, an electron block layer, and a second semiconductor layer. Among the barrier layers, an endmost barrier layer closest to the second semiconductor layer includes a first endmost barrier layer part and a second endmost barrier layer part formed on a side closer to the second semiconductor layer than the first endmost barrier layer part and having a larger band gap than that of the first endmost barrier layer part. The first endmost barrier layer part has a band gap that is larger than that of each of the well layers and is smaller than that of each barrier layer other than the endmost barrier layer. | 04-28-2016 |
20160118539 | LIGHT EMITTING DIODE ELEMENT AND METHOD OF MANUFACTURING THE SAME - An n-type GaN layer made of n-type gallium nitride (GaN) is formed on a sapphire substrate. A plurality of island-phased layered structures are formed in random sizes between the n-type GaN layer and a p-type GaN layer that is made of p-type GaN. Each of the layered structures is configured by stacking multiple AlN layers made of aluminum nitride (AlN) and multiple InGaN layers made of indium gallium nitride (InGaN) on an AlN base layer. The respective layered structures emit lights of different wavelengths. This accordingly allows for emission of light in a wider wavelength range. | 04-28-2016 |
20160118540 | Light-Emitting Diode - A light-emitting diode includes at least an N-type layer, a light-emitting layer and a P-type layer, wherein the light-emitting layer forms a “V”-shaped indentation or pit during epitaxial process and the V pit is filled in with at least one type of metal nanoparticles to generate surface plasma coupling effect and to improve recombination probability of holes and electrons, thus improving internal quantum efficiency; further, a V pit is generated in the N-type layer during epitaxial process; surface plasma coupling effect is generated by filling metal nanoparticles in the V pit to increase light reflection, light extraction efficiency and external quantum efficiency, thereby improving light emitting efficiency of LED; and the V pit is formed directly by adjusting growth rate, thickness, temperature, pressure or doping during epitaxial process instead of etching, which causes no damage to the LED epitaxial layer, thus simplifying process and improving device stability. | 04-28-2016 |
20160118562 | WAFER LEVEL PHOTONIC DEVICE DIES STRUCTURE AND METHOD OF MAKING THE SAME - A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality of bonding pads on a side of the carrier structure distal the epi structure, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL). The vertical LED device further includes a first insulating film on a side of the carrier structure proximal the epi structure and a second insulating film on a side of the carrier structure distal the epi structure. | 04-28-2016 |
20160126410 | SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS INCLUDING INDIUM GALLIUM NITRIDE, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND RELATED LIGHT EMITTING DEVICES - Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising In | 05-05-2016 |
20160126411 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a light emitting element includes n-type and p-type semiconductor layers and a light emitting unit. The light emitting unit is provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting unit emits light with a peak wavelength of not less than 530 nm. The light emitting unit includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer, a first well layer contacting the n-side barrier layer between the n-side barrier layer and the first barrier layer, a first AlGaN layer provided between the first well layer and the first barrier layer and including Al | 05-05-2016 |
20160126412 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nanostructure semiconductor light emitting device may including: a base layer formed of a first conductivity-type semiconductor, an insulating layer formed on an upper surface of the base layer and including a first region having a plurality of openings and a plurality of second regions positioned in the plurality of openings and spaced apart from the first region, dielectric nanocores disposed in the plurality of second regions, and a plurality of light emitting nanostructures each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the dielectric nanocores. | 05-05-2016 |
20160126413 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and a lighting system. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a contact layer on the second conductive semiconductor layer; an insulating layer on the contact layer; a first branch electrode electrically connected to the first conductive semiconductor layer; a plurality of first via electrodes connected to the first branch electrode and electrically connected to the first conductive semiconductor layer by passing through the insulating layer; a first pad electrode electrically connected to the first branch electrode; a second pad electrode contacts the contact layer by passing through the insulating layer; a second branch electrode connected to the second pad electrode and disposed on the insulating layer; and a plurality of second via electrodes provided throughprovided through the insulating layer to electrically connect the second branch electrode to the contact layer. | 05-05-2016 |
20160126423 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction. | 05-05-2016 |
20160133790 | Textured phosphor conversion layer light emitting diode - This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element. | 05-12-2016 |
20160133801 | LED MIXING CHAMBER WITH REFLECTIVE WALLS FORMED IN SLOTS - A relatively large substrate has a reflective surface, such as a diffusive white surface. LED dies, either as bare LED dies or packaged LED dies, are mounted to the substrate to form separate arrays of LEDs. Each array is intended for a separate mixing chamber. A layer of an encapsulant, such as silicone, is deposited over the substrate to encapsulate the LED dies. A laser etches through the encapsulant to form slots, and a reflective material, such as a white paint, is deposited in the slots to form reflective walls of each mixing chamber. If desired, a phosphor layer is deposited over the encapsulant and reflective walls. The substrate is then singulated to separate out the mixing chambers. Since no discrete parts are assembled, and multiple mixing chambers are formed simultaneously, the resulting mixing chambers are inexpensive and very reliable. | 05-12-2016 |
20160133810 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is disclosed. The light emitting device package includes a package body, a heat radiating member disposed in the package body, a light emitting device disposed on the heat radiating member, a bonding member disposed between the light emitting device and the heat radiating member, and a bonding member fixing layer disposed around the bonding member, wherein the bonding member fixing layer has at least one through region. | 05-12-2016 |
20160141278 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a plurality of micro light emitting chips and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion. Each of the micro light emitting chips includes an N-type semiconductor layer, an active layer and a P-type semiconductor layer. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate. The micro light emitting chips are electrically connected to the pads of the substrate by the conductive bumps. An orthogonal projection area of each of the conductive bumps on the substrate is greater than an orthogonal projection area of each of the micro light emitting chips on the substrate. | 05-19-2016 |
20160141449 | LIGHT EMITTING DIODE WITH DOPED QUANTUM WELLS AND ASSOCIATED MANUFACTURING METHOD - A light emitting diode based on GaN including an active zone located between an n-doped layer and a p-doped layer that together form a p-n junction, wherein the active zone includes at least one n-doped emissive layer. | 05-19-2016 |
20160141450 | Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same - A method for treating a LED structure with a substance, the LED structure includes an array of nanowires on a planar support. The method includes producing the substance at a source and causing it to move to the array along a line. The angle between the line followed by the substance and the plane of the support is less than 90° when measured from the center of the support. The substance is capable of rendering a portion of the nanowires nonconductive or less conductive compared to before being treated by the substance. | 05-19-2016 |
20160141451 | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR COMPONENT COMPRISING SUCH A SEMICONDUCTOR STRUCTURE - A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing a substrate including at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface; forming the at least one semiconductor structure in contact with the silicon carbide layer, the structure including at least one part, as a contact part, in contact with the surface of the silicon carbide layer, which includes gallium. | 05-19-2016 |
20160141454 | LIGHT-EMITTING DIODE DEVICE - A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, and wherein the triangular upper surface has three sides and three vertexes; a first electrode formed on the first light-emitting stack and located near a first side of the three sides of the triangular upper surface; and a second electrode formed on the first light-emitting stack; including a second electrode pad near a first vertex of the three vertexes; and a second electrode extending part extending from the second electrode pad in two directions, disposed along other two sides of the three sides to surround the first electrode and stopping at the first side to form an opening. | 05-19-2016 |
20160141455 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved. | 05-19-2016 |
20160141459 | LIGHT-EMITTING DEVICE - A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part. | 05-19-2016 |
20160141463 | COMPOSITE HAVING SEMICONDUCTOR STRUCTURES EMBEDDED IN A MATRIX - Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core. | 05-19-2016 |
20160141464 | LIGHT-EMITTING DEVICE - In order to provide a light-emitting device having improved color rendering properties, a light-emitting device which uses a SiC fluorescent material comprises a first SiC fluorescent portion in which a donor impurity and an acceptor impurity are added and which is formed of a SiC crystal; a second SiC fluorescent portion which is formed of a SiC crystal in which the same donor impurity as the first SiC fluorescent portion and the same acceptor impurity as the first SiC fluorescent portion are added, and in which a concentration of the acceptor impurity is higher than the concentration of the acceptor impurity in the first SiC fluorescent portion and an emission wavelength is longer than that of the first SiC fluorescent portion; and a light-emitting portion that emits excitation light that excites the first SiC fluorescent portion and the second SiC fluorescent portion. The color rendering property of the SiC fluorescent material is improved and it becomes easy to adjust the color temperature and the color rendering index of the light-emitting device which uses the SiC fluorescent material. | 05-19-2016 |
20160141466 | THIN FILM LIGHT EMITTING DIODE - Light emitting devices comprise a substrate having a surface and a side surface; a semiconductor structure on the surface of the substrate, the semiconductor structure having a first surface, a second surface and a side surface, wherein the second surface is opposite the first surface, wherein the first surface, relative to the second surface, is proximate to the substrate, and wherein the semiconductor structure comprises a first-type layer, a light emitting layer and a second-type layer; a first and a second electrodes; and a wavelength converting element arranged on the side surface of the semiconductor structure, wherein the wavelength converting element has an open space, and wherein the open space is a portion not covered by the wavelength converting element. | 05-19-2016 |
20160141471 | PROCESS FOR FORMING ULTRA-MICRO LEDS - A flexible light sheet includes a bottom conductor layer overlying a flexible substrate. An array of vertical light emitting diodes (VLEDs) is printed as an ink over the bottom conductor layer so that bottom electrodes of the VLEDs electrically contact the bottom conductor layer. A top electrode of the VLEDs is formed of a first transparent conductor layer, and a temporary hydrophobic layer is formed over the first transparent conductor layer. A dielectric material is deposited between the VLEDs but is automatically de-wetted off the hydrophobic layer. The hydrophobic layer is then removed, and a second transparent conductor layer is deposited to electrically contact the top electrode of the VLEDs. The VLEDs can be made less than 10 microns in diameter since no top metal bump electrode is used. The VLEDs are illuminated by a voltage differential between the bottom conductor layer and the second transparent conductor layer. | 05-19-2016 |
20160148916 | METHOD AND STRUCTURE FOR RECEIVING A MICRO DEVICE - A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material. | 05-26-2016 |
20160149073 | Light-Emitting Diode Fabrication Method - A method of fabricating a light-emitting diode includes: proving a substrate; forming an N-type layer, a low-temperature Al | 05-26-2016 |
20160149074 | Advanced Electronic Device Structures Using Semiconductor Structures and Superlattices - Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity. | 05-26-2016 |
20160149075 | Optoelectronic Device - An optoelectronic device comprising a semiconductor structure includes a p-type active region and an n-type active region. The semiconductor structure is comprised solely of one or more superlattices, where each superlattice is comprised of a plurality of unit cells. Each unit cell comprises at least two distinct substantially single crystal layers. | 05-26-2016 |
20160149078 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer ( | 05-26-2016 |
20160149087 | SMALL-SIZED LIGHT-EMITTING DIODE CHIPLETS AND METHOD OF FABRICATION THEREOF - Diode includes light emitting region, first metal layer, dielectric layer, and second metal layer. Light emitting diode includes n-type group III-nitride portion, p-type group III-nitride layer, and light emitting region sandwiched between n- and p-type layers. First metal layer may be coupled to p-type III-N portion and plurality of first terminals. First metal layer and p-type III-N portion may have substantially similar lateral size that is smaller than 200 micrometers. A portion of light emitting region and first metal layer may include a single via. Electrically-insulating layer may be coupled to first metal layer and sides of the single via. First terminals may be exposed from electrically-insulating layer. Second metal layer may include second terminal and may be coupled to electrically-insulating layer and to n-type III-N portion through the single via. The thickness of the diode excluding second terminal may be between 2 and 20 micrometers. Other embodiments are described. | 05-26-2016 |
20160149091 | LIGHT-EMITTING MATERIAL, METHOD FOR PRODUCING SAME, OPTICAL FILM, AND LIGHT-EMITTING DEVICE - The purpose of the invention is to provide a high-transparency light-emitting material of sufficient durability to minimize long-term degradation of semiconductor nanoparticles due to oxygen, etc.; and a method for producing said material. This light-emitting material is characterized in containing semiconductor nanoparticles, a metal alkoxide, and a silicon compound. | 05-26-2016 |
20160155895 | Light-Emitting Diode Epitaxial Structure | 06-02-2016 |
20160155897 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE | 06-02-2016 |
20160155901 | HIGHLY REFLECTIVE FLIP CHIP LED DIE | 06-02-2016 |
20160155903 | LIGHT-EMITTING DEVICE | 06-02-2016 |
20160163918 | FORMING LED STRUCTURES ON SILICON FINS - Methods of forming III-V LED structures on silicon fin templates are described. Those methods and structures may include forming an n-doped III-V layer on a silicon ( | 06-09-2016 |
20160163919 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PERIODIC GAIN ACTIVE LAYERS - A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side. | 06-09-2016 |
20160163920 | Electronic Devices Comprising N-Type and P-Type Superlattices - A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material. | 06-09-2016 |
20160163922 | NANO-STRUCTURED LIGHT-EMITTING DEVICES - Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures. | 06-09-2016 |
20160163929 | LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE PACKAGE, AND LIGHT UNIT - A light-emitting device, according to one embodiment, comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer which is underneath the first conductive semiconductor layer, and a second conductive semiconductor layer which is underneath the active layer; a reflective electrode, which is arranged under the light-emitting structure; and an electrode which is arranged inside the first conductive semiconductor layer and comprises a conductive ion injection layer. | 06-09-2016 |
20160164031 | ADHESIVE BARRIER FILM CONSTRUCTION - The present disclosure relates to forming a bond with a high peel resistance between a bonding layer and an adjacent barrier layer. Such articles are particularly useful in the preparation of a device, in particular a luminescent device, and a method is described for assembly of the luminescent device. The luminescent device includes an encapsulation system using flexible transparent barrier film and an ultraviolet (UV) radiation curable (meth)acrylate matrix. The moisture sensitive luminescent material can be, for example, a quantum dot material disposed in a film, or a film construction that includes an OLED structure. | 06-09-2016 |
20160172534 | III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHODS OF PRODUCING THE SAME | 06-16-2016 |
20160172536 | SEMICONDUCTOR LIGHT-EMITTING STRUCTURE | 06-16-2016 |
20160172537 | LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING UNITS | 06-16-2016 |
20160172538 | INSULATING LAYER FOR PLANARIZATION AND DEFINITION OF THE ACTIVE REGION OF A NANOWIRE DEVICE | 06-16-2016 |
20160172542 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE | 06-16-2016 |
20160172544 | Ultraviolet Reflective Rough Adhesive Contact | 06-16-2016 |
20160172556 | LIGHT EMITTING DIODE WITH LOW REFRACTIVE INDEX MATERIAL LAYERS TO REDUCE LIGHT GUIDING EFFECTS | 06-16-2016 |
20160181471 | Optoelectronic Semiconductor Chip Comprising a Multi-Quantum Well Comprising at Least One High Barrier Layer | 06-23-2016 |
20160181472 | SEMICONDUCTOR LIGHT-EMITTING DEVICE | 06-23-2016 |
20160181474 | OPTOELECTRONIC DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE | 06-23-2016 |
20160181476 | MICRO LED WITH DIELECTRIC SIDE MIRROR | 06-23-2016 |
20160190391 | LIGHT-EMITTING DEVICE - Disclosed are a light-emitting device, a method of fabricating the same, a light-emitting device package, and a lighting system. The light-emitting device includes a first-conductivity-type semiconductor layer, an active layer disposed on the first-conductivity-type semiconductor layer and including a quantum well having a composition of In | 06-30-2016 |
20160190392 | Light Emitting Device and Method for Manufacturing Light Emitting Device - A light emitting device that is inexpensive, is easy to manufacture, and has high light extraction efficiency is provided. The light emitting device includes an oriented polycrystalline substrate, a plurality of columnar light emitting parts, and a light confinement layer. The oriented polycrystalline substrate includes a plurality of oriented crystal grains. The plurality of columnar light emitting parts are discretely located on or above one main surface of the oriented polycrystalline substrate in areas in which there are no crystal defects, and are each a columnar part having a longitudinal direction matching a normal direction of the oriented polycrystalline substrate. The light confinement layer is made of a material having a lower refractive index than a material for the plurality of columnar light emitting parts, and is located on or above the oriented polycrystalline substrate so as to surround the plurality of columnar light emitting parts. | 06-30-2016 |
20160190394 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE LIGHT EMITTING ELEMENT, AND METHOD OF MANUFACTURING THE SAME - A light emitting element includes an n-type semiconductor layer having an upper surface; a p-type semiconductor layer over a portion of the upper surface of the n-type semiconductor layer, the p-type semiconductor layer having an upper surface; a protective film continuously covering the n-type semiconductor layer and the p-type semiconductor layer, the protective film defining an n-side opening at the upper surface of the n-type semiconductor layer and a p-side opening at an upper surface of the p-type semiconductor layer; a p-side electrode on the upper surface of the p-type semiconductor layer that is exposed in the p-side opening; an n-side electrode on the upper surface of the n-type semiconductor layer that is exposed at the n-side opening, n-side electrode having an n-side light-transmissive electrode; and an n-side pad electrode on the upper surface of the n-side light-transmissive electrode. | 06-30-2016 |
20160190396 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE ARRAY AND LIGHTING APPARATUS INCLUDING THE SAME - A light emitting device is provided that may include a light emitting structure including a first conductivity-type semiconductor layer, an active layer provided on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer provided on the active layer, a first electrode that conductively contacts the first conductivity-type semiconductor layer, an insulating layer provided on a portion of the light emitting structure and the first electrode, and a second electrode that conductively contacts the second conductivity-type semiconductor layer, the first electrode including a first portion protruding from a side surface of the first conductivity-type semiconductor layer. | 06-30-2016 |
20160190497 | ORGANIC LIGHT EMITTING DIODE DISPLAY HAVING QUANTUM DOT - The present disclosure relates to an organic light emitting diode display having a quantum dot. The present disclosure suggests an organic light emitting diode display including a substrate having a plurality of pixel area, each pixel area having a light emitting area and a non-light emitting area; a thin film transistor disposed in the non-light emitting area; an organic light emitting diode including an anode electrode, a cathode electrode and a source energy layer between the anode electrode and the cathode electrode, connected to the thin film transistor, and disposed in the light emitting area; an encapsulation layer joined on the substrate; and a quantum light emitting layer radiating lights having any one wavelength by an energy from the source energy layer, and disposed on an inner surface of the encapsulation layer as corresponding to the source energy layer. | 06-30-2016 |
20160190515 | DISPLAY PANEL - A display panel includes a lighting device, a color conversion layer, and a reflective sheet. The lighting device at least includes a first lighting part emitting a first light of a first color having a wavelength within the first wavelength range and a second lighting part emitting a second light of the first color having a wavelength within a second wavelength range. The color conversion layer includes a number of bases corresponding to the first lighting part and the second lighting part. The reflective sheet reflects a light having a wavelength within a first wavelength range and lets a light having a wavelength out of the first wavelength range to pass through. The bases corresponding to the first lighting part are doped with a number of quantum dot particles to convert the first light to a third light of a second color. | 06-30-2016 |
20160197064 | OPTOELECTRONIC DEVICE COMPRISING LIGHT-EMITTING DIODES | 07-07-2016 |
20160197231 | SOLID STATE LIGHTING DEVICES WITH DIELECTRIC INSULATION AND METHODS OF MANUFACTURING | 07-07-2016 |
20160197232 | LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION | 07-07-2016 |
20160197233 | Deep Ultraviolet Light Emitting Diode | 07-07-2016 |
20160197234 | POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME | 07-07-2016 |
20160197298 | ORGANIC/INORGANIC ELECTROLUMINESCENT DEVICE | 07-07-2016 |
20160204091 | INVERTED OPTICAL DEVICE | 07-14-2016 |
20160204306 | HYBRID HETEROSTRUCTURE LIGHT EMITTING DEVICES | 07-14-2016 |
20160204307 | LIGHT EMITTING DIODE OF WHICH AN ACTIVE AREA COMPRISES LAYERS OF INN | 07-14-2016 |
20160204312 | OPTOELECTRONIC DEVICE COMPRISING MICROWIRES OR NANOWIRES | 07-14-2016 |
20160380149 | LIGHT EMITTING DIODE HAVING WELL AND/OR BARRIER LAYERS WITH SUPERLATTICE STRUCTURE - A light emitting diode includes an N-type GaN-based semiconductor compound layer, a P-type GaN-based semiconductor compound layer, and an active region disposed between the P-type and N-type layers, the active region comprising alternately laminated well layers and barrier layers. The well layers comprise Al | 12-29-2016 |
20160380150 | Deep Ultraviolet Light Emitting Diode - A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. | 12-29-2016 |
20160380151 | VERTICAL STRUCTURE LEDS - A vertical light emitting diode structure, comprising: a support structure including a support substrate and a metallic layer, the metallic layer being disposed on the support substrate; a GaN-based semiconductor structure including a first-type semiconductor layer on the support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, a thickness of the GaN-based semiconductor structure from the bottom surface to the top surface being less than 5 micro meters, and a ratio of a thickness of the second-type semiconductor layer to the thickness of the GaN-based semiconductor structure being not less than 60%; a first contact layer disposed between the support structure and the GaN-based semiconductor structure to be electrically connected to the first-type semiconductor layer, a thickness of the first contact layer being less than the thickness of the first-type semiconductor layer; a second contact layer disposed on the GaN-based semiconductor structure to be electrically connected to the second-type semiconductor layer, the second contact layer including titanium and aluminum; a metal pad disposed on the second contact layer, the metal pad including gold; and a passivation layer being in contact with the support structure, the passivation layer extending from the support structure to the top surface of the GaN-based semiconductor structure via the side surface of the GaN-based semiconductor structure. | 12-29-2016 |
20170236975 | III-Nitride Nanowire LED with Strain Modified Surface Active Region and Method of Making Thereof | 08-17-2017 |
20170236976 | SOLID STATE LIGHTING DEVICES WITH IMPROVED CONTACTS AND ASSOCIATED METHODS OF MANUFACTURING | 08-17-2017 |
20170236977 | LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR | 08-17-2017 |
20180026162 | Light-Emitting Diode With Transparent Conductive Electrodes For Improvement in Light Extraction Efficiency | 01-25-2018 |
20180026166 | QUANTUM DOT ENSEMBLE AND MANUFACTURING METHOD THEREOF | 01-25-2018 |
20190148581 | HIGH VOLTAGE PHOTOVOLTAICS INTEGRATED WITH LIGHT EMITTING DIODE CONTAINING ZINC OXIDE CONTAINING LAYER | 05-16-2019 |
20190148584 | LIGHT EMITTING DIODES USING ULTRA-THIN QUANTUM HETEROSTRUCTURES | 05-16-2019 |
20190148586 | PATTERNED SI SUBSTRATE-BASED LED EPITAXIAL WAFER AND PREPARATION METHOD THEREFOR | 05-16-2019 |
20190148588 | LIGHT EMITTING DIODE WITH HIGH EFFICIENCY | 05-16-2019 |
20190148593 | POLARIZATION FIELD ASSISTED HETEROSTRUCTURE DESIGN FOR EFFICIENT DEEP ULTRA-VIOLET LIGHT EMITTING DIODES | 05-16-2019 |
20190148661 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME | 05-16-2019 |
20220140271 | QUANTUM DOT MATERIAL, QUANTUM DOT LIGHT EMITTING DEVICE, DISPLAY APPARATUS AND MANUFACTURING METHOD - Disclosed are a quantum dot material, a quantum dot light emitting device, a display apparatus and a manufacturing method. The quantum dot material includes: a quantum dot, an anionic ligand, and a linking group linking the quantum dot and the anionic ligand, wherein the anionic ligand is configured to bind to a ring molecule by electrostatic force. | 05-05-2022 |