Class / Patent application number | Description | Number of patent applications / Date published |
257010000 | Low workfunction layer for electron emission (e.g., photocathode electron emissive layer) | 48 |
20090032797 | PHOTOCATHODE - When to-be-detected light is made incident from a support substrate | 02-05-2009 |
20090256135 | Thermal electron emitter and thermal electron emission device using the same - A thermal electron emitter includes at least one carbon nanotube twisted wire and a plurality of electron emission particles mixed with the twisted wire. The carbon nanotube twisted wire comprises a plurality of carbon nanotubes. A work function of the electron emission particles is lower than the work function of the carbon nanotubes. A thermal electron emission device using the thermal electron emitter is also related. | 10-15-2009 |
20100108983 | Photocathode semiconductor device - A superlattice structure comprises a plurality of well layers made of first semiconductor and a plurality of barrier layers made of second semiconductor that has a band gap wider than that of the first semiconductor, wherein both layers are deposited alternately, and wherein a maximum thickness of each of the wall and barrier layers is such that a band gap between a lower limit of a mini band generated in a conduction band and an upper limit of a mini band generated in a valence band is a given width in the energy state of electron of the superlattice structure, and a minimum thickness of each of the wall and the barrier layers is such that a bandwidth of a mini band generated in the conduction band is a given width in the energy state of electron of the superlattice structure. | 05-06-2010 |
20100171093 | Controlled Growth of a Nanostructure on a Substrate, and Electron Emission Devices Based on the Same - The present invention provides for an array of nanostructures grown on a conducting substrate. The array of nanostructures as provided herein is suitable for manufacturing electronic devices such as an electron beam writer, and a field emission device. | 07-08-2010 |
20100252804 | CATHODE ASSEMBLY CONTAINING AN ULTRAVIOLET LIGHT-BLOCKING DIELECTRIC LAYER - A field emission cathode assembly that has a UV-blocking, insulating dielectric layer ( | 10-07-2010 |
20100258784 | Method Of Efficient Coupling Of Light From Single-Photon Emitter To Guided Radiation Localized To Sub-Wavelength Dimensions On Conducting Nanowires - A cavity free, broadband approach for engineering photon emitter interactions via sub-wavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot (QD) is optically excited in close proximity to a silver nanowire (NW), emission from the QD couples directly to guided surface plasmons in the NW, causing the wire's ends to light up. Nonclassical photon correlations between the emission from the QD and the ends of the NW demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that the efficient coupling is accompanied by more than 2.5-fold enhancement of the QD spontaneous emission, in a good agreement with theoretical predictions. | 10-14-2010 |
20100283033 | CARBIDE NANOSTRUCTURES AND METHODS FOR MAKING SAME - A structure includes a substrate and a metallized carbon nano-structure extending from a portion of the substrate. In a method of making a metallized carbon nanostructure, at least one carbon structure formed on a substrate is placed in a furnace. A metallic vapor is applied to the carbon nanostructure at a preselected temperature for a preselected period of time so that a metallized nanostructure | 11-11-2010 |
20100320439 | Carbon nanotube structure and method of vertically aligning carbon nanotubes - A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the pores and each of the CNTs has its lateral sides supported by the CNT support layer. A method of vertically aligning CNTs includes: forming a first conductive substrate; stacking a CNT support layer having pores on the first conductive substrate; and attaching one end of the each of the CNTs to portions of the first conductive substrate exposed through the pores. | 12-23-2010 |
20110049467 | Manufacturing method of metal oxide nanostructure and electronic element having the same - Disclosed herein is a manufacturing method of metal oxide nanostructure, including the steps of: (S1) supplying a precursor containing a first metal, a precursor containing a second metal and oxygen onto a substrate; (S2) forming an amorphous second metal oxide layer on the substrate; (S3) forming first nuclei containing the first metal as a main component and second nuclei containing the second metal as a main component on the substrate; (S4) converting the first nuclei into single crystalline seed layers spaced apart from each other and converting the second nuclei into amorphous layers surrounding the first nuclei; and (S5) selectively forming rods on the seed layers and then growing the rods. | 03-03-2011 |
20110057164 | CARBON NANOTUBE FIELD EMISSION DEVICE WITH OVERHANGING GATE - A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed. | 03-10-2011 |
20110089396 | FIELD EMISSION ARRAY HAVING CARBON MICROSTRUCTURE AND METHOD OF MANUFACTURING THE SAME - Provided is a method for manufacturing a field emission array with a carbon microstructure. The method includes: a photomask attachment step of attaching a photomask with a pattern groove to one surface of a transparent substrate; a photoresist attachment step of attaching a negative photoresist to one surface of the photomask; an exposure step of irradiating light toward the opposite surface of the transparent substrate from the photomask to cure a portion of the negative photoresist with the light irradiated on the negative photoresist through the pattern groove; a developing step of removing an uncured portion of the negative photoresist while leaving the cured portion of the negative photoresist as a microstructure; a pyrolysis step of heating and carbonizing the microstructure thus obtained; and a cathode attachment step of attaching a voltage-supplying cathode to the surface of the transparent substrate on which the microstructure is formed. | 04-21-2011 |
20110101299 | CARBON NANOTUBE ARRAYS FOR FIELD ELECTRON EMISSION AND METHODS OF MANUFACTURE AND USE - A method for preparation of carbon nanotubes (CNTs) bundles for use in field emission devices (FEDs) includes forming a plurality of carbon nanotubes on a substrate, contacting the carbon nanotubes with a polymer composition comprising a polymer and a solvent, and removing at least a portion of the solvent so as to form a solid composition from the carbon nanotubes and the polymer to form a carbon nanotube bundle having a base with a periphery, and an elevated central region where, along the periphery of the base, the carbon nanotubes slope toward the central region. | 05-05-2011 |
20110140073 | SEMICONDUCTING MICROCAVITY AND MICROCHANNEL PLASMA DEVICES - Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode. | 06-16-2011 |
20110140074 | ROOM TEMPERATURE DISPENSER PHOTOCATHODE - Self-healing photocathode device comprising a photoemissive multi-alkali semiconductor comprising a multi-alkali antimonide having the formula A | 06-16-2011 |
20110147698 | FIELD EMISSION DEVICE AND METHOD OF FORMING THE SAME - A field emission device is provided. The field emission device includes a first substrate including a gate electrode including gate lines respectively extending in first, second, and third direction and a cathode electrode including cathode lines respectively extending in the first, second, and third directions; a second substrate facing the first substrate and including an anode electrode; and a space between the first and second substrates. | 06-23-2011 |
20110168969 | Large Scale Patterned Growth of Aligned One-Dimensional Nanostructures - A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures. | 07-14-2011 |
20110220864 | SINGLE-CRYSTALLINE GERMANIUM COBALT NANOWIRE, A GERMANIUM COBALT NANOWIRE STRUCTURE, AND A FABRICATION METHOD THEREOF - Provided is a single-crystalline Co | 09-15-2011 |
20120012811 | CORNER CUBE ENHANCED PHOTOCATHODE - Techniques are disclosed for improving the quantum efficiency of photocathode devices. The techniques allow for an increase in the optical thickness of the photocathode device, while simultaneously allowing for an increase in the probability of electron escape into the vacuum of the device. The techniques are particularly useful in detector and imaging. In one embodiment, a photocathode device is provided that has an array of corner cubes fabricated in a surface of the photocathode. The corner cube array is made of the same material as the photocathode layer. The device may be, for example, a detector or image intensifier that operates in the UV, visible, and IR light spectrums, and may further include a gain medium, anode, and readout device. Techniques for forming the device are also provided. | 01-19-2012 |
20120119183 | FABRICATION OF AN INTEGRATED TERAHERTZ SOURCE USING FIELD EMITTER ARRAY WITH GRATING STRUCTURE - The present invention provides for a fabrication of an integrated THz source. The fabrication includes integrating a field emitter array (FEA) with a grating by utilizing micro-electromechanical system (MEMS) and grating fabrication methods to build the FEA device upon a moveable surface that can be rotated perpendicular to the other, and locked into alignment or alternately finely adjusted. | 05-17-2012 |
20120235113 | ELECTRON EMISSION ELEMENT AND IMAGING DEVICE HAVING THE SAME - An electron emission element has an electron emission layer that emits an electron from a surface emission portion, a focusing electrode layer that is film-formed on a surface of the electron emission layer via a first insulation layer and focuses the emitted electron, a gate electrode layer that is film-formed on a surface of the focusing electrode layer via a second insulation layer, an emission concave portion that penetrates the gate electrode layer, the second insulation layer, the focusing electrode layer and the first insulation layer and opens in a concave shape on a surface of the surface emission portion, a carbon layer that is film-formed from a surface of the gate electrode layer over an inner peripheral surface of the emission concave portion, and a partial insulation portion that insulates the focusing electrode layer from the carbon layer. | 09-20-2012 |
20120248402 | PHOTON EMITTER EMBEDDED IN METALLIC NANOSLIT ARRAY - An emitter device for emitting electromagnetic radiation is presented. The device includes a metallic patterned structure, and emitting media integral with the metallic patterned structure. The emitting media includes one or more emitters of omni-directional emission in nature wherein certain emission pattern. One or more parameters of the metallic patterned structure, that define a dispersion map thereof, are selected according to the emitting pattern such that the metallic patterned structure operates as a beam shaper creating resonant coupling of each emitter with a microscopic confined optical mode of the metallic patterned structure thereby enhancing by a predetermined enhancement factor the emission from the emitting media in a predetermined direction. The device thus provides predetermined directional beaming of output electromagnetic radiation wherein a predetermined angular propagation of the electromagnetic radiation emitted by the emitting media. | 10-04-2012 |
20120292590 | OPTICAL COMPONENT - An optical component comprising an emitter and a solid reflector, said reflector having a convex outer surface, said emitter being located within the solid reflector, the emitter being configured to emit radiation via an electric dipole transition, the dipole having a dipole axis being orientated at an angle of 45 degrees or less to the surface normal at the apex of the reflector. | 11-22-2012 |
20120292591 | High-Voltage Electronic Device - A high-voltage electronic device comprising high-voltage electrodes, located in a dielectric envelope with an internal surface coated with a material having a conductivity which is greater than the conductivity of the envelope, characterized in that the areas subject to high field strength are coated with composite material, based on a polycrystalline material with a bulk conductivity of particles 10 | 11-22-2012 |
20120313073 | NICKEL-BASED ELECTROCATALYTIC PHOTOELECTRODES - A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconductive material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. | 12-13-2012 |
20130032778 | ELECTRON EMITTING SOURCE AND SUBSTRATE FOR THIN FILM GROWTH | 02-07-2013 |
20130168635 | MATERIALS AND CONFIGURATIONS OF A FIELD EMISSION DEVICE - A field emission device is configured as a heat engine. Different embodiments of the heat engine may have different configurations that may include a cathode, gate, suppressor, and anode arranged in different ways according to a particular embodiment. Different embodiments of the heat engine may also incorporate different materials in and/or proximate to the cathode, gate, suppressor, and anode. | 07-04-2013 |
20130187123 | FIELD EMISSION DEVICE AND METHOD OF FABRICATING THE SAME - A field-emission device is disclosed. The device comprises a solid state structure formed of a crystalline material and an amorphous material, wherein an outer surface of the solid state structure is substantially devoid of the amorphous material, and wherein a p-type conductivity of the crystalline material is higher at or near the outer surface than far from the outer surface. | 07-25-2013 |
20130214244 | CARBON NANOTUBE FIELD EMISSION DEVICES AND METHODS OF MAKING SAME - Devices and methods are described for a cathode having a plurality of apertures in an insulating layer, pits in a substrate layer, and emitters in the pit. The device can also have gate layer on top of the insulating layer which has an opening that is substantially aligned with the pit and the aperture. The emitter can be an array of substantially aligned carbon nanotubes. The device and method produces cathodes that are designed to avoid shorting of the cathode due to emitter-gate contact and other fabrication challenges. | 08-22-2013 |
20130285009 | LATERAL FIELD EMISSION DEVICE - Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials. | 10-31-2013 |
20130299773 | LOW VOLTAGE NANOSCALE VACUUM ELECTRONIC DEVICES - An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer. | 11-14-2013 |
20140110661 | Multinozzle Emitter Arrays for Ultrahigh-Throughput Nanoelectrospray Mass Spectrometry - The present invention provides for a structure comprising a plurality of emitters, wherein a first nozzle of a first emitter and a second nozzle of a second emitter emit in two directions that are not or essentially not in the same direction; wherein the walls of the nozzles and the emitters form a monolithic whole. The present invention also provides for a structure comprising an emitter with a sharpened end from which the emitter emits; wherein the emitters forms a monolithic whole. The present invention also provides for a fully integrated separation of proteins and small molecules on a silicon chip before the electrospray mass spectrometry analysis. | 04-24-2014 |
20140264256 | THREE DIMENSIONAL RADIOISOTOPE BATTERY AND METHODS OF MAKING THE SAME - According to one embodiment, a product includes an array of three dimensional structures, where each of the three dimensional structure includes a semiconductor material; a cavity region between each of the three dimensional structures; and a first material in contact with at least one surface of each of the three dimensional structures, where the first material is configured to provide high energy particle and/or ray emissions. | 09-18-2014 |
20140291609 | JUNCTIONLESS SEMICONDUCTOR LIGHT EMITTING DEVICES - A junctionless light emitting device comprises a field emitter cathode, and a light emitting semi-conductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC). The field emitter cathode is configured to inject electrons into the ohmic contact. | 10-02-2014 |
20140353576 | INTEGRATED VACUUM MICROELECTRONIC DEVICE AND FABRICATION METHOD THEREOF - An integrated vacuum microelectronic device comprises: a highly doped semiconductor substrate, at least one insulating layer) placed above said doped semiconductor substrate, a vacuum aperture formed within said at least one insulating layer and extending to the highly doped semiconductor substrate, a first metal layer acting as a cathode, a second metal layer placed under said highly doped semiconductor substrate and acting as an anode. The first metal layer is placed adjacent to the upper edge of the vacuum aperture and the vacuum aperture has a width dimension such as the first metal layer remains suspended over the vacuum aperture. | 12-04-2014 |
20140353577 | EMISSION IN NANOSCALE STRUCTURES VIA NANOCAVITY PLASMONS - Plasmonic nanoscale devices with increased emissions are disclosed. Highly concentrated fields of plasmonic nanocavities are integrated with a core to alter the excited-state optical processes. A plasmonic device (e.g., a nanowire) is created using a direct or indirect bandgap material core, an interlayer and a metallic shell. | 12-04-2014 |
20140361242 | FIELD EMISSION DEVICE - A field emission device is configured as a heat engine. | 12-11-2014 |
20150060757 | FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING GATE ELECTRODES THEREOF - A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode comprising a graphene sheet covering the opening. A method of manufacturing a gate electrode may comprise: forming a graphene thin film on one surface of a conductive film; forming a mask layer having an etching opening on another surface of the conductive film, wherein the etching opening exposes a portion of the conductive film; partially removing the conductive film through the etching opening to partially expose the graphene thin film; and/or removing the mask layer. | 03-05-2015 |
20150060758 | FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING EMITTERS THEREOF - A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening. | 03-05-2015 |
20160141428 | PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING AN EMPTY TRENCH STRUCTURE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY - The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench. | 05-19-2016 |
20160148774 | FIELD-EMISSION DEVICE WITH IMPROVED BEAMS-CONVERGENCE - The present disclosure may provide a field emission device with an enhanced beam convergence. For this, the device may include a gate structure disposed between a cathode electrode and an anode electrode, wherein the gate structure includes a gate electrode and an atomic layer sheet disposed on the gate electrode, the gate electrode facing an emitter and having at least one aperture formed therein. | 05-26-2016 |
20180025881 | PHOTOELECTRIC SURFACE, PHOTOELECTRIC CONVERSION TUBE, IMAGE INTENSIFIER, AND PHOTOMULTIPLIER TUBE | 01-25-2018 |
257011000 | Combined with a heterojunction involving a III-V compound | 7 |
20100252805 | GaN Nanorod Arrays Formed by Ion Beam Implantation - A method of preparing nanorod arrays using ion beam implantation is described that includes defining a pattern on a substrate and then implanting ions into the substrate using ion beam implantation. Next, a thin film is deposited on the substrate. During film growth, nanotrenches form and catalyze the formation of nanorods through capillary condensation. The resulting nanorods are aligned with the supporting matrix and are free from lattice and thermal strain effect. The density, size, and aspect ratios of the nanorods can be varied by changing the ion beam implantation and thin film growth conditions resulting in control of emission efficiency. | 10-07-2010 |
20110089397 | SPIN-POLARIZED ELECTRON SOURCE - To provide implement a spin-polarized electron generating device having high spin polarization and high external quantum efficiency while allowing a certain degree of freedom in selecting materials of a substrate, a buffer layer, and a strained superlattice layer. | 04-21-2011 |
20130248815 | SEMICONDUCTOR PHOTOCATHODE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor photocathode includes an Al | 09-26-2013 |
20130320295 | Vacuum Encapsulated, High Temperature Diamond Amplified Cathode Capsule and Method for Making Same - A vacuum encapsulated, hermetically sealed cathode capsule for generating an electron beam of secondary electrons, which generally includes a cathode element having a primary emission surface adapted to emit primary electrons, an annular insulating spacer, a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element, a first high-temperature solder weld disposed between the diamond window element and the annular insulating spacer and a second high-temperature solder weld disposed between the annular insulating spacer and the cathode element. The cathode capsule is formed by a high temperature weld process under vacuum such that the first solder weld forms a hermetical seal between the diamond window element and the annular insulating spacer and the second solder weld forms a hermetical seal between the annular spacer and the cathode element whereby a vacuum encapsulated chamber is formed within the capsule. | 12-05-2013 |
20140326943 | SEMICONDUCTOR DEVICE FOR ELECTRON EMISSION IN A VACUUM - A semiconductor device for electron emission in a vacuum comprises a stack of two or more semi-conductor layers of N and P type according to sequence N/(P)/N forming a juxtaposition of two head-to-tail NP junctions, in materials belonging to the III-N family, two adjacent layers forming an interface. The semiconductor materials of the layers of the stack close to the vacuum, where the electrons reach a high energy, have a band gap Eg>c/2, where c is the electron affinity of the semiconductor material, the P-type semiconductor layer being obtained partially or completely, by doping impurities of acceptor type or by piezoelectric effect to exhibit a negative fixed charge in any interface between the layers, a positive bias potential applied to the stack supplying, to a fraction of electrons circulating in the stack, the energy needed for emission in the vacuum by an emissive zone of an output layer. | 11-06-2014 |
20160133424 | LIGHT EMITTING DIODES, FAST PHOTO-ELECTRON SOURCE AND PHOTODETECTORS WITH SCALED NANOSTRUCTURES AND NANOSCALE METALLIC PHOTONIC CAVITY AND ANTENNA, AND METHOD OF MAKING SAME - A new ultra-thin high-efficiency photoelectron source utilizing a metallic photonic resonant cavity having a photonic resonant cavity with a top metallic with a plurality of openings, each having an average dimension less than the wavelength of the excitation photons in vacuum, a bottom metallic layer and a photoelectron emission layer of semiconductor positioned between the top metallic layer and the bottom metallic. | 05-12-2016 |
20220139660 | ELECTRON EMITTING ELEMENT AND POWER GENERATION ELEMENT - According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Al | 05-05-2022 |