Entries |
Document | Title | Date |
20080265220 | Process for Producing Capacitors - The invention relates to a process for producing capacitors based on niobium suboxide, and having an insulator layer of niobium pentoxide. Also described is a powder mixture suitable for production of capacitors. Pressed bodies produced from the powder mixture, and capacitors having specific properties are also disclosed. | 10-30-2008 |
20080277629 | Fine Metal Particle Colloidal Solution, Conductive Paste Material, Conductive Ink Material, and Process for Producing the Same - A colloidal solution of fine particles of metal or alloy having an average grain size of 10 nm or more is provided which is heat treated to cause coloration, or a metal colloidal pigment having inherent color, a conductive paste material or a conductive ink for printed substrate electronic parts or the like based on a colloid prepared by dispersing fine metal particles at high concentration in a liquid is provided. | 11-13-2008 |
20080290327 | Method for Increasing the Conversion of Group III Metals to Group III Nitrides in a Fused Metal Containing Group III Elements - The present invention relates to a method for increasing the conversion of group III metal to group III nitride in a fused metal containing group III elements, with the introduction of nitrogen into the fused metal containing group III, at temperatures≦1100° C. and at pressures of below 1×10 | 11-27-2008 |
20080315160 | Gallium Containing Zinc Oxide - It is an object of the present invention to provide a gallium containing zinc oxide with an improved heat ray shielding function while keeping high transparency to visible light rays. The present invention is directed to a gallium containing zinc oxide, which has a heat ray shielding function, a gallium content of in the range of 0.25 to 25% by weight, and a carrier electron density n | 12-25-2008 |
20090001327 | Doped Organic Semiconductor Material - The present invention relates to a doped organic semiconductor material comprising at least one organic matrix material, which is doped with at least one dopant, the matrix material being selected from a group consisting of certain phenanthroline derivatives; and also an organic light-emitting diode which comprises such a semiconductor material. | 01-01-2009 |
20090026423 | METHOD AND SYSTEM FOR CONTROLLING RESISTIVITY IN INGOTS MADE OF COMPENSATED FEEDSTOCK SILICON - Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides a predominantly p-type semiconductor for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of aluminum or/and gallium. The process further melts the silicon feedstock together with a predetermined amount of aluminum or/and gallium to form a molten silicon solution from which to perform directional solidification and, by virtue of adding aluminum or/and gallium, maintains the homogeneity the resistivity of the silicon ingot throughout the silicon ingot. In the case of feedstock silicon leading to low resistivity in respective ingots, typically below 0.4Ω cm, a balanced amount of phosphorus can be optionally added to aluminum or/and gallium. Adding phosphorus becomes mandatory at very low resistivity, typically close to 0.2Ω cm and slightly below. | 01-29-2009 |
20090050857 | Method of improving the weatherability of copper powder - A copper powder that is excellent in weatherability and adapted for use in conductive paste is provided that contains 10-20,000 ppm, preferably 100-2,000 ppm, of Sn. The copper powder is particularly preferably one having an average particle diameter DM of 0.1-2 μm and, further, one wherein the particle diameter of at least 80% of all particles is in the range of 0.5 DM-1.5 DM. This copper powder can be produced, for example, by precipitating Cu metal by reduction of Cu ions in the presence of Sn ions. | 02-26-2009 |
20090072205 | INDIUM PHOSPHIDE SUBSTRATE, INDIUM PHOSPHIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THEM - An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the <100> orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lower end of a growth container. The growth container housing the seed crystal, indium phosphide raw material, dopant, and boron oxide is placed in a crystal growth chamber. The temperature is raised to at or above the melting point of indium phosphide. After melting the boron oxide, indium phosphide raw material, and dopant, the temperature of the growth container is lowered in order to obtain an indium phosphide monocrystal. An average dislocation density is a function of a carrier density and diameter of the substrate, dislocation density, and a dopant concentration on the wafer is substantially uniform in the depth direction. | 03-19-2009 |
20090085014 | Zinc Oxide-Based Transparent Conductor and Sputtering Target for forming the Transparent Conductor - Proposed is a zinc oxide-based transparent conductor characterized in having zinc oxide as its primary component, containing an element at 1 to 10 atomic % which has a smaller ion radius than zinc in the zinc oxide and serves as an n-type dopant for the zinc oxide, and containing nitrogen in which the atomicity ratio of nitrogen in relation to the n-type dopant (nitrogen/n-type dopant) is 0.3 to 0.6. In the development of a transparent conductor that does not contain In, which is an expensive raw material with concern of resource depletion, the limit of the conventional development technique known as the single-dopant method is exceeded, a guide to dopant selection as a specific means for realizing the co-doping theory is indicated, and a transparent conductor having low resistivity is provided. | 04-02-2009 |
20090127517 | HIGH-FREQUENCY SUBSTRATE AND PRODUCTION METHOD THEREFOR - To provide a technique for producing a high-frequency substrate featuring a superior adhesion force of a conductor. | 05-21-2009 |
20090146113 | CONDUCTIVE PATTERN FORMING INK, CONDUCTIVE PATTERN, AND WIRING SUBSTRATE - A conductive pattern forming ink for forming a conductive pattern on a substrate by a droplet discharge method includes: metal particles; an aqueous dispersion medium in which the metal particles are dispersed; xylitol; and a polyglycerol compound having a polyglycerol skeleton. H shown in the following formula (I) is 0.10 to 0.70, and | 06-11-2009 |
20090146114 | CONDUCTIVE PATTERN FORMING INK, CONDUCTIVE PATTERN, AND WIRING SUBSTRATE - A conductive pattern forming ink for forming a conductive pattern on a substrate by a droplet discharge method includes: metal particles; an aqueous dispersion medium in which the metal particles are dispersed; sorbitol; and a polyglycerol compound having a polyglycerol skeleton. In the ink, H shown in the following Formula (I) is 0.20 to 0.80; | 06-11-2009 |
20090218550 | Single-Source Precursor for Semiconductor Nanocrystals - A process for preparing a single source solid precursor matrix for semiconductor nanocrystals having the steps of: mixing 0.1-1 Molar of an aqueous/non-aqueous (organic) solution containing the first component of the host matrix with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state, dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution, addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state, addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material, addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture, and heating the mixture to obtain a solid layered micro-structural precursor compound. | 09-03-2009 |
20090218551 | BULK THERMOELECTRIC COMPOSITIONS FROM COATED NANOPARTICLES - The invention provides a dense bulk thermoelectric composition containing a plurality of nanometer-sized particles of a thermoelectric material. The bulk composition provides thermoelectric power up to 550 μV/° C. In some embodiments, the surface of each particle is coated by another thermoelectric material. The size of the particles ranges from about 5 nm to about 500 nm. The density of thermoelectric composition ranges from about 80% to about 100% of theoretical density. | 09-03-2009 |
20090230362 | CONJUGATED OLIGOELECTROLYTE ELECTRON TRANSPORTING LAYERS - An organic electronic or an optoelectronic device containing a conjugated oligoelectrolyte. In more particularized embodiments, the conjugated oligoelectrolyte is the charge injection or transport layer. The conjugated oligoelectrolyte can be positively or negatively charged, and used in conjunction in a device with either or high or low work function metal. | 09-17-2009 |
20090230363 | POLYMER COMPOSITE - A polymer composite having a high dielectric constant is disclosed herein. The polymer composite includes a conductive material impregnated with oxidizable metal nanoparticles or metal oxide nanoparticles to decrease dielectric loss, and an anion surfactant containing an acidic functional group to form a passivation layer that surrounds the conductive material, resulting in increased dielectric constant. | 09-17-2009 |
20090242851 | ZnO DEPOSITION MATERIAL AND ZnO FILM FORMED OF THE SAME - A ZnO deposition material to be used for forming a transparent conductive film is composed of a ZnO pellet made of ZnO powder having a ZnO purity of 98% or more. The pellet includes one or more kinds of elements selected from the group consisting of Y, La, Sc, Ce, Pr, Nd, Pm and Sm. The ZnO pellet is polycrystal or monocrystal. The ZnO film formed by a vacuum film forming method employing the ZnO deposition material as a target material can exhibit excellent conductivity. The vacuum film forming method is preferably an electron beam vapor deposition method, an ion plating method or a sputtering method. | 10-01-2009 |
20090250666 | METHOD FOR PRODUCING COMPOSITE MEMBER OF METAL MEMBER AND RESIN MEMBER - The invention discloses an injection molding method for manufacture of a metal-resin composite member; wherein the resin composition used in the method includes a plurality of metal particles having one or more metal melting points between about 200° C. and 400° C.; said resin composition is heated to a temperature higher than the resin melting point and higher than one or more metal melting points to provide a heated resin composition; and wherein injecting said heated resin into a mold results in contact of said heated resin with one or more disposed heated metal member(s) to provide a composite member. | 10-08-2009 |
20090261304 | Copper particulate dispersions and method for producing the same - [Object] It is aimed at providing a copper particulate dispersion containing therein copper particulates having diameters of 100 nm or less, suitable as a wiring material, which dispersion possesses not only an excellent dispersibility and oxidation resistance of copper particulates but also an excellent film-forming ability, and which dispersion is also capable of achieving a satisfactory electroconductive property of an electroconductive film obtained by low-temperature sintering. | 10-22-2009 |
20090267029 | Indium-oxide-based transparent conductive film and method for producing the film - The invention provides a transparent conductive film which exhibits low resistance and high transmittance, is an amorphous film, can be relatively readily patterned by etching with a weak acid, and can be relatively readily crystallized, and a method for producing the film. | 10-29-2009 |
20090278095 | CAPACITOR POWDER - Disclosed herein are capacitors having an anode based on niobium and a barrier layer based on niobium pentoxide, at least the barrier layer having a content of vanadium and process for their preparation and use. | 11-12-2009 |
20090302280 | COMPOSITION AND ASSOCIATED METHOD - A composition includes a metal precursor. The metal precursor may include an inorganic ligand and a metal cation. The inorganic ligand may include a carbamate group. An associated method is provided. | 12-10-2009 |
20090315000 | TRANSPARENT CONDUCTIVE FILM, SINTERED BODY, AND THEIR PRODUCTION METHODS - The present invention provides a transparent conductive film having high conductivity and a production method therefor. The present invention further provides a sintered body for forming the transparent conductive film and a production method therefor. The transparent conductive film comprises Ga, Ti, and O. The sintered body comprises Ga, Ti, and O. The method for producing a sintered body comprises the steps of: (a) mixing a titanium-containing powder and a gallium-containing powder; and (b) compacting and sintering the obtained mixture. | 12-24-2009 |
20100025637 | Synthesis of Uniform Nanoparticle Shapes with High Selectivity - Embodiments of the invention provide a method of making non-spherical nanoparticles that includes (a) combining a source of a Group 12, 13, 14, or 15 metal or metalloid; a source of a Group 15 or 16 element; and a source of a quaternary ammonium compound or phosphonium compound; and (b) isolating non-spherical nanoparticles from the resulting reaction mixture. Other embodiments of the invention provide non-spherical nanoparticle compositions, that are the reaction product of a source of a Group 12, 13, 14, or 15 metal or metalloid; a source of a Group 15 or 16 element; and a source of a quaternary ammonium compound or phosphonium compound; wherein nanoparticle tetrapods comprise 75-100 number percent of the nanoparticle products. | 02-04-2010 |
20100025638 | COMPOSITION FOR FORMING TRANSPARENT ELECTROCONDUCTIVE FILM, TRANSPARENT ELECTROCONDUCTIVE FILM, AND DISPLAY - A composition includes a binder component and a conductive powder and a high-refractive-index powder both dispersed in the binder component, wherein the conductive powder includes 0.1 to 30 mass % of a tin hydroxide powder and 70 to 99.9 mass % of other conductive powder. The composition enables to form a transparent conductive film having excellent scratch resistance, excellent antistatic properties, an extremely high visible light transmittance and a controllable refractive index. Also described is the transparent conductive film. Further described is a display having the transparent conductive film on the display surface. | 02-04-2010 |
20100038603 | SILVER PARTICLE DISPERSION LIQUID AND PROCESS FOR PRODUCING THE SAME - A silver particle dispersion liquid comprising a silver particle powder having an average particle diameter (D | 02-18-2010 |
20100044648 | CONDUCTIVE PASTE - This is to provide a conductive paste with higher electroconductivity containing, as raw materials: a metallic powder; a thermosetting resin; and a flux-activating compound having a carboxyl group and a phenolic hydroxyl group, which is applicable to the fine pitch-utilization. | 02-25-2010 |
20100044649 | MATERIAL FOR TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT CONDUCTIVE FILM - The present invention relates to a material for making a transparent conductive film, and a transparent conductive film. The material for making the transparent conductive film is composed of a mixed metal oxide comprising Zn, Sn, O, and at least one doping element selected from the group consisting of Sc, Bi, Cu, Y, La, Ag, and Au. | 02-25-2010 |
20100072433 | RESIN PACKAGE AND PRODUCTION METHOD THEREOF - The method for producing a resin package according to the present invention includes a step of forming a copper oxide layer by oxidizing the surface of a lead frame in which at least the surface is made of copper, and a step of forming a resin package main unit by allowing a resin to adhere to the copper oxide layer on the lead frame surface by resin molding for package, and then removing a predetermined area of the copper oxide layer with an acidic solution. | 03-25-2010 |
20100078601 | Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent. | 04-01-2010 |
20100084619 | SEMICONDUCTOR CERAMIC MATERIAL - A semiconductor ceramic material which contains no Pb and has a high Curie point, low resistivity, and PTC characteristicsis represented by the formula ABO | 04-08-2010 |
20100090177 | METHOD FOR OBTAINING THIOPHENE OLIGOMERS - The invention relates to a method for obtaining oligothiophenes. The object of the method is to produce semi-conducting polymers, or semi-conducting oligomers having a defined median molecular weight, and a narrow molecular weight distribution. | 04-15-2010 |
20100108951 | MATERIAL FOR TRANSPARENT CONDUCTIVE FILM - The present invention provides a material for transparent conductive film. The material for transparent conductive film comprises a mixed metal oxide containing Zn, Sn and O, and at least one selected from the group consisting of group V to X elements of the periodic table as a dopant element. | 05-06-2010 |
20100108952 | Core-shell structure metal nanoparticles and its manufacturing method thereof - Metal nanoparticles, containing a copper core and thin layer of precious metals enclosing the core to prevent oxidization of copper, in which manufacturing the metal nanoparticles is economical efficiency because of increased copper content and since such metal nanoparticles contain a metal having high electrical conductivity such as silver for a thin layer, they can form a wiring having better conductivity than copper and there is little concern that silver migration may occur. | 05-06-2010 |
20100133485 | PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL SUBSTRATE - In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm | 06-03-2010 |
20100148129 | Voltage Switchable Dielectric Material Containing Insulative and/or Low-Dielectric Core Shell Particles - A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shell particles that individually comprise an insulative core and one or more shell layers. | 06-17-2010 |
20100171082 | HIGH QUALITY DOPED ZnO THIN FILMS - A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and
| 07-08-2010 |
20100187485 | SINGLE-WALLED CARBON NANOTUBE DISPERSION LIQUID AND METHOD FOR PRODUCING SINGLE-WALLED CARBON NANOTUBE DISPERSION LIQUID - Disclosed is a single-walled carbon nanotube dispersion liquid containing a single-walled carbon nanotube, a fullerene and a solvent. | 07-29-2010 |
20100230643 | PROCESS FOR PRODUCING METAL FILM, METAL FILM AND USE OF THE METAL FILM - The process of the present invention for producing a metal film includes: forming an organic film using a primer composition containing an addition polymerizable compound including three or more reactive groups, an acid group-including addition polymerizable compound, and a hydrophilic functional group-including addition polymerizable compound; forming a metal (M1) salt from the acid group; substituting the metal (M1) salt of the acid group with a metal (M2) salt by processing the organic film with a metal (M2) ion aqueous solution containing a metal (M2) ion having less ionization tendency than the metal (M1) ion; reducing the metal (M2) ion so that a metal film is formed on a surface of the organic film; and oxidizing the metal film. This provides (i) a process for producing a metal film and a metal pattern, at low cost, on an arbitrary substrate, (ii) a metal film, and (iii) use of the meta film. | 09-16-2010 |
20100230644 | COPPER FINE PARTICLES, METHOD FOR PRODUCING THE SAME, AND COPPER FINE PARTICLE DISPERSION - A method for producing copper fine particles by heating and reducing an oxide, hydroxide, or salt of copper included in a solution of ethylene glycol, diethylene glycol, or triethylene glycol, the method comprising controlling a total halogen content of the solution to be less than 20 ppm by mass relative to copper and adding a water-soluble polymer as a dispersant such as polyethyleneimine and a noble metal compound or noble metal colloid for nucleation to the solution. This method makes it possible to provide copper fine particles for use in a wiring material, which are very fine as small as 50 nm or less in average particle size and high dispersibility, extremely low undesirable halogen content, and can be sintered at a low temperature. | 09-16-2010 |
20100243966 | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM - A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%. | 09-30-2010 |
20100276644 | METHOD FOR PRODUCING NITROGEN-DOPED CARBON NANOTUBES - Process for producing nitrogen-doped carbon nanotubes (NCNTs) in a fluidized bed. | 11-04-2010 |
20100294999 | PRODUCING METHOD AND APPARATUS OF SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL INGOT - The sublimation speed of dopant can be precisely controlled without being influenced by a change over time of intra-furnace thermal environment. A dopant supply unit equipped with an accommodation chamber and a supply tube is provided. A sublimable dopant is accommodated. Upon sublimation of the dopant within the accommodation chamber, the sublimed dopant is introduced into a melt. The dopant within the accommodation chamber of the dopant supply unit is heated. The amount of heating by means of heating means is controlled so as to sublime the dopant at a desired sublimation speed. The dopant is supplied to the melt so that the dopant concentration until the first half of a straight body portion of the silicon single crystal is in the state of low concentration or non-addition. After the first half of the straight body portion of the silicon single crystal is formed, the dopant is supplied to the melt so that every portion of the crystal is in the state where the dopant is added to a desired high concentration. | 11-25-2010 |
20100327236 | METHOD FOR PRODUCING METAL MICROPARTICLES, AND METAL COLLOIDAL SOLUTION CONTAINING THE METAL MICROPARTICLES - An aqueous solution containing a polymer dispersant and a metal compound, and an aqueous solution of a reducing agent, are joined together and uniformly mixed while being subjected to reduction reaction to give metal microparticles, in a thin film fluid formed between processing surfaces arranged to be opposite to each other so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, by using a reaction apparatus of uniform stirring and mixing the above aqueous solutions. | 12-30-2010 |
20110001095 | ZINC OXIDE-BASED CONDUCTOR - A zinc oxide-based conductor includes ZnO co-doped with gallium and manganese. Preferably, the doping concentration of the gallium ranges from 0.01 at % to 10 at % and the doping concentration of the manganese ranges from 0.01 at % to 5 at %. More preferably, the doping concentration of the gallium ranges from 2 at % to 8 at % and the doping concentration of the manganese ranges from 0.1 at % to 2 at %. Still more preferably, the doping concentration of the gallium ranges from 4 at % to 6 at % and the doping concentration of the manganese ranges from 0.2 at % to 1.5 at %. The zinc oxide-based conductor is a transparent conductor that is used as an electrode of a solar cell or a liquid crystal display. | 01-06-2011 |
20110017958 | ORGANIC TRANSPARENT ELECTROCONDUCTIVE MATERIAL, INK FOR FORMING ORGANIC TRANSPARENT ELECTROCONDUCTIVE MATERIAL, AND METHODS FOR PRODUCING THEM - A method for producing a transparent electroconductive material, the method comprising a step of contacting poly(N-alkylcarbazole) with a metal, said poly(N-alkylcarbazole) is obtained by polymerizing at least one kind of N-alkylcarbazole represented by the following general formula, | 01-27-2011 |
20110031448 | Copper Powder for Conductive Paste and Conductive Paste - Copper powder is provided, which, while having fine granularity, does not loose either resistance to oxidation or balance in conductivity, and furthermore, copper powder for conductive paste in which variations in shape and granularity are small and having a low concentration in oxygen content. The copper powder for conductive paste contains 0.07 to 10 atomic % Al inside each copper particle in the powder. | 02-10-2011 |
20110049438 | PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND HIGHLY DOPED N-TYPE SEMICONDUCTOR SUBSTRATE - After adding phosphorus (P) and germanium (Ge) into a silicon melt or adding phosphorus into a silicon/germanium melt, a silicon monocrystal is grown from the silicon melt by a Czochralski method, where a phosphorus concentration [P] | 03-03-2011 |
20110049439 | ELECTRICALLY CONDUCTIVE PASTE, AND ELECTRICAL AND ELECTRONIC DEVICE COMPRISING THE SAME - Disclosed is an electrically conductive paste which enables to reduce the level of void growth in a conducting pathway formed in a joint part produced after curing the electrically conductive paste in the implementation of an electronic component on a circuit board by using the electrically conductive paste, and which contains a reduced amount of a viscosity-adjusting/thixotropy-imparting additive. Two Sn-containing low-melting-point alloy particles having different melting points and different average particle diameters are selected as electrically conductive filler components to be used in an electrically conductive paste, and the two alloy particles are mixed at a predetermined ratio for use. | 03-03-2011 |
20110101285 | CONDUCTIVE PASTE WITH SURFACTANTS - A conductive paste includes: at least one metal powder, an organic vehicle, a glass and a surfactant having a representative formula as follows: M | 05-05-2011 |
20110147676 | OXIDE EVAPORATION MATERIAL AND HIGH-REFRACTIVE-INDEX TRANSPARENT FILM - An oxide evaporation material in the present invention comprises a sintered body containing indium oxide as a main component thereof and cerium with the Ce/In atomic ratio of more than 0.110 and equal to or less than 0.538, and has an L* value of 62 to 95 in the CIE 1976 color space. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of oxygen gas is introduced into a film-formation vacuum chamber, a high-refractive-index transparent film having a refractive index of 2.15 to 2.51 at a wavelength of 550 nm, a low resistance, and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the introduced oxygen gas amount is small, the difference in composition between the film and the evaporation material is made small. | 06-23-2011 |
20110155967 | PASTE COMPOSITION FOR SOLAR CELL, MANUFACTURING METHOD THEREFOR AND SOLAR CELL - The paste composition for forming a back electrode of solar cell | 06-30-2011 |
20110155968 | FINE METAL PARTICLE-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING THE SAME - A metal-containing composition that can provide, by low-temperature heat treatment, a sintered state comparable to that obtained by high-temperature heat treatment, a conductive paste, a metal film are provided. A method for manufacturing a metal-containing composition that can manufacture the metal-containing composition by simple operation steps is also provided. The metal-containing composition contains fine metal particles, and the ratio ρ | 06-30-2011 |
20110163276 | POWDER MIXTURE TO BE MADE INTO EVAPORATION SOURCE MATERIAL FOR USE IN ION PLATING, EVAPORATION SOURCE MATERIAL FOR USE IN ION PLATING AND METHOD OF PRODUCING THE SAME, AND GAS BARRIER SHEET AND METHOD OF PRODUCING THE SAME - A powder mixture to be made into an evaporation source material for use in ion plating, and an evaporation source material useful for ion plating and a method of producing it, and a gas barrier sheet and a method of producing it. The powder mixture comprises 100 parts by weight of silicon oxide powder and 5 to 100 parts by weight of a conductive material powder. Preferably, both the silicon oxide powder and the conductive material powder have a mean particle diameter of 5 μm or less. The conductive material powder is preferably a powder of at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. The evaporation source material for use in ion plating is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding the powder mixture. | 07-07-2011 |
20110180763 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 07-28-2011 |
20110204299 | ELECTRODE MATERIAL FOR VACUUM CIRCUIT BREAKER AND METHOD OF MANUFACTURING THE SAME - Atomized Cu—Cr alloy powder, 20 to 30 percent by weight of Thermite Cr powder and 5 percent by weight of electrolytic Cu powder are mixed together and undergo solid phase sintering treatment to form an electrode material for vacuum circuit breakers. The gross content of Cr of the electrode material is 30 to 50 percent by weight. In manufacturing the electrode material for vacuum circuit breakers, such powders are mixed together and then undergo compression molding to be formed into a compressed compact. The compressed compact is performed solid phase sintering at a temperature lower than the melting point of Cu in a non-oxidizing atmosphere to prepare a solid phase sintered body. | 08-25-2011 |
20110227003 | NON-LEAD RESISTOR COMPOSITION - A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li | 09-22-2011 |
20110233480 | PRODUCING METHOD OF METAL FINE PARTICLES OR METAL OXIDE FINE PARTICLES, METAL FINE PARTICLES OR METAL OXIDE FINE PARTICLES, AND METAL-CONTAINING PASTE, AND METAL FILM OR METAL OXIDE FILM - There is provided a producing method of metal fine particles or metal oxide fine particles for producing metal fine particles or metal oxide fine particles by atomizing raw materials by performing processes including an oxidizing process and a reducing process to the raw materials composed of metal or a metal compound. | 09-29-2011 |
20110240931 | NANOPARTICLE-RESIN COMPOSITION, NANOPARTICLE-RESIN COMPOSITE, AND METHOD OF MAKING NANOPARTICLE-RESIN COMPOSITE - A nanoparticle-resin composition includes a nanoparticle, a silicone resin having a reactive functional group at its terminal end, and a compound selected from a silane group-containing compound, a silazane compound, or a combination including at least one of the foregoing. In addition, a nanoparticle-resin composite includes a silicone resin matrix including the cure product of a silicone resin having a reactive functional group at its terminal end, a plurality of nanoparticle clusters dispersed in the silicone resin matrix, and a buffer layer encapsulating the nanoparticle cluster. The buffer layer includes a compound selected from a silane group-containing compound, a silazane compound, or a combination including at least one of the foregoing compounds. | 10-06-2011 |
20110248221 | METAL FINE PARTICLE FOR CONDUCTIVE METAL PASTE, CONDUCTIVE METAL PASTE AND METAL FILM - A metal fine particle for a conductive metal paste includes a protective agent covering a surface of the metal fine particle. An amount of heat generated per unit mass (g) of the metal fine particle is not less than 500 J at a temperature of an external heat source temperature in a range of 200° C. to 300° C. when being calcined by the external heat source. The protective agent includes at least one selected from the group consisting of dipropylamine, dibutylamine, triethylamine, tripropylamine, tributylamine, butanethiol, pentanethiol, hexanethiol, heptanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol and dodecanethiol. The content of the protective agent is in a range of 0.1 to 20% by mass with respect to the mass of the metal fine particle. | 10-13-2011 |
20110260118 | IN-GA-ZN-SN TYPE OXIDE SINTER AND TARGET FOR PHYSICAL FILM DEPOSITION - An oxide sintered body including an indium element (In), a gallium element (Ga), a zinc element (Zn) and a tin element (Sn), and including a compound shown by Ga | 10-27-2011 |
20110266504 | DEPOSITION FROM IONIC LIQUIDS - A method to electrodeposit or electroless deposit material onto substrates from ionic liquids in vacuum or in a protective atmosphere after exposing the ionic liquid to vacuum and the resulting material. According to the invention, dense layers, free of unwanted components, can be produced in vacuum or in a protective atmosphere after exposing the ionic liquid to vacuum. | 11-03-2011 |
20110284807 | METAL FINE PARTICLE, CONDUCTIVE METAL PASTE AND METAL FILM - A metal fine particle includes one amine compound, and one compound causing an alkylation of the amine compound. The amine compound and the alkylation causing compound cover a surface of the metal fine particle. The alkylation causing compound includes an alkyl halide compound. The alkyl halide compound includes one of iodomethane, iodoethane, 1-iodopropane, 2-iodopropane, 1-iodobutane, 1-iodo-2-methylpropane, 1-iodopentane, 1-iodo-3-methylbutane, 1-iodohexane, 1-iodoheptane, 1-iodooctane, 1-iodononane, 1-iododecane, 1-iodoundecane, 1-iodododecane, 1-iodotridecane, 1-iodotetradecane, 1-iodopentadecane, 1-iodohexadecane, 1-iodoheptadecane, 1-iodooctadecane, 1-iodononadecane, and 1-iodoeicosane. | 11-24-2011 |
20110291057 | METHOD OF PRODUCING HYBRID POLYMER-INORGANIC MATERIALS - Hybrid composite materials with multiscale morphologies are formed by doping polymer submicrometer spheres with semiconductor or metal (e.g. CdS or Ag, respectively) nanoparticles and using these doped microspheres as functional building blocks in production of hybrid periodically structured materials. The preparation of hybrid polymer particles include the following stages: (i) synthesis of monodisperse polymer microspheres, (ii) in-situ synthesis of the inorganic nanoparticles either on the surface, or in the bulk with polymer beads, and (iii) encapsulation of hybrid microspheres with a hydrophobic shell. | 12-01-2011 |
20110297893 | PRODUCTION METHOD OF N-TYPE SIC SINGLE CRYSTAL, N-TYPE SIC SINGLE CRYSTAL OBTAINED THEREBY AND APPLICATION OF SAME - A method for producing n-type SiC single crystal, including: adding gallium and nitrogen, which is a donor element, for obtaining an n-type semiconductor during crystal growth of SiC single crystal, such that the amount of nitrogen as represented in atm unit is greater than the amount of gallium as represented in atm unit; an n-type SiC single crystal obtained according to this production method; and, a semiconductor device that includes the n-type SiC single crystal. | 12-08-2011 |
20110303883 | GLASS COMPOSITION FOR ELECTRODE FORMATION AND ELECTRODE FORMATION MATERIAL - A glass composition for electrode formation includes, as a glass composition expressed in terms of oxides by mass %, 60 to 90% of Bi | 12-15-2011 |
20110303884 | SiC Crystals Having Spatially Uniform Doping Impurities - A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule. | 12-15-2011 |
20110315936 | SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure. | 12-29-2011 |
20120001129 | Mixture for Preventing Surface Stains - In order to achieve the object of providing a mixture by means of which, in particular, sintered moldings can be obtained that are virtually free of surface stains produced by soot particles, a mixture is proposed which comprises at least one pressing aid and at least one additive, wherein the additive is selected from a group of substances which have releasable carbon dioxide. | 01-05-2012 |
20120032120 | CONDUCTIVE SLURRY FOR SOLAR BATTERY AND PREPARATION METHOD THEREOF - The present invention discloses a conductive shiny for a solar battery comprising a first-order aluminum powder having a median diameter D | 02-09-2012 |
20120037855 | ALUMINUM PASTE AND SOLAR CELL - An aluminum paste and a solar cell, the aluminum paste including aluminum powder; an organic vehicle; and antimony oxide, the antimony oxide being present in an amount of about 0.001 wt % to less than about 1.0 wt %, based on a total weight of the aluminum paste. | 02-16-2012 |
20120043508 | SOLUBLE IMIDE SKELETON RESIN, SOLUBLE IMIDE SKELETON RESIN SOLUTION COMPOSITION, CURABLE RESIN COMPOSITION, AND CURED PRODUCT THEREOF - An imide skeleton resin represented by the following general formula (1) has a coefficient of linear expansion as low as that of polyimide resin and excellent processability like epoxy resin, and is useful as a resin composition for electrical laminates. Five percent by mole or more of the entirety of the A component is a linking group having an imide skeleton represented by the following general formula (4-1). B denotes a hydrogen atom or a group represented by the following structural formula (5). n denotes an integer in the range of 0 to 200. If both of the B's are hydrogen atoms, then n denotes an integer of 1 or more. | 02-23-2012 |
20120043509 | Indium Oxide Sintered Compact, Indium Oxide Transparent Conductive Film, and Manufacturing Method of Indium Oxide Transparent Conductive Film - An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film. | 02-23-2012 |
20120056135 | Silicon Single Crystal Doped with Gallium, Indium, or Aluminum - A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed. | 03-08-2012 |
20120056136 | CONDUCTIVE FINE PARTICLES, ANISOTROPIC CONDUCTIVE ELEMENT, AND CONNECTION STRUCTURE - The present invention provides a conductive fine particle capable of suppressing a blackening phenomenon during storage and thus providing high connection reliability; an anisotropic conductive material containing the conductive fine particle; and a connection structure. | 03-08-2012 |
20120061622 | SURFACE-ACTIVATION OF SEMICONDUCTOR NANOSTRUCTURES FOR BIOLOGICAL APPLICATIONS - The present invention provides means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate comprising a network of nanostructures. Prior or subsequent to cleavage from the substrate, the nanostructures can be activated by an activation means such as exposing their surfaces to a plasma, oxidation or ion implantation. In some embodiments, the surface activation renders the nanostructures more hydrophilic, thereby facilitating functionalization of the nanoparticles for either in vitro or in vivo use. | 03-15-2012 |
20120085976 | Sintering composition and sintering method - The present invention relates to a sintering composition and a sintering method. The sintering composition includes: a plurality of sintering raw materials; and an energetic reagent of which decomposition temperature ranges from 50° C. to 400° C. Accordingly, the present invention can reduce the sintering temperature by adding the energetic reagent in an appropriate amount. | 04-12-2012 |
20120104330 | METAL INK COMPOSITION, METHOD OF FORMING A CONDUCTIVE METAL FILM USING THE SAME, AND CONDUCTIVE METAL FILM USING THE SAME - Provided herein is a metal ink composition, including an organism-derived adhesive material. Such a metal ink composition is eco-friendly and is adhered to an adherent with excellent adhesion even when added in a small content. Further, the metal ink composition is not condensed by thermal sintering, and thus exhibits excellent patternability. | 05-03-2012 |
20120112135 | METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL, AND SEMICONDUCTOR CRYSTAL - A method of producing a semiconductor crystal is provided. The method includes the steps of preparing a longitudinal container with a seed crystal and an impurity-containing melt placed in a bottom section and with a suspension part arranged in an upper section and suspending a dropping raw material block made of a semiconductor material having an impurity concentration lower than the impurity concentration of the impurity-containing melt, and creating a temperature gradient in the longitudinal direction of the longitudinal container to melt the dropping raw material block, and solidifying the impurity-containing melt from the side that is in contact with the seed crystal ( | 05-10-2012 |
20120132867 | SEMICONDUCTOR MATERIALS AND METHODS OF PRODUCING THEM - A method of producing particles containing metal oxide for use in semiconductor devices may include heating metal-containing particles in a flame produced by a mixture of oxygen and a fuel component comprising at least one combustible gas selected from hydrogen and hydrocarbons. The oxygen may be present in the mixture in a proportion of not less than 10 mole % below, and not more than 60 mole % above, a stoichiometric amount relative to the fuel component, so as to oxidize metal in at least an outer shell of the particles. The method may include cooling the oxidized particles by feeding them into a liquid, collecting the cooled oxidized particles; and providing a distance between entry of the particles into the flame and collection of the particles of at least 300 mm. | 05-31-2012 |
20120153237 | ZnO-Based Varistor Composition - Disclosed herein is a ZnO-based varistor composition including zinc oxide (ZnO) as a main component and a calcium (Ca)-containing compound as an accessory component. The varistor composition provides excellent electrostatic discharge (ESD) characteristics because it has excellent physical properties, such as a nonlinear coefficient, a clamping voltage ratio, a surge absorbance and the like, and, particularly, does not include Bi | 06-21-2012 |
20120161082 | PASTE COMPOSITION FOR REAR ELECTRODE OF SOLAR CELL AND SOLAR CELL INCLUDING THE SAME - A paste composition for a rear electrode of a solar cell according to an embodiment comprises conductive powder including a first powder having a first mean particle diameter, a second powder having a second mean particle diameter larger than the first mean particle diameter, and a third powder having a third mean particle diameter larger than the second mean particle diameter, and an organic vehicle. | 06-28-2012 |
20120168689 | LEAD-FREE CONDUCTIVE PASTE COMPOSITION - A lead-free conductive paste composition includes silumin powder, lead-free glass frits, an organic binder, stearic acid zinc, and aluminum powder. | 07-05-2012 |
20120199796 | Sintered Compact of Indium Oxide System, and Transparent Conductive Film of Indium Oxide System - A sintered indium oxide comprising niobium as an additive, wherein the ratio of the number of niobium atoms relative to the total number of atoms of all metal elements contained in the sintered compact is within a range of 1 to 4%, the relative density is 98% or higher, and the bulk resistance is 0.9 mΩ·cm or less. Provided are a sintered compact of indium oxide system and a transparent conductive film of indium oxide system, which have characteristics of high transmittance in the short wavelength and long wavelength ranges since the carrier concentration is not too high even though the resistivity thereof is low. | 08-09-2012 |
20120241693 | AQUEOUS-BASED DISPERSIONS OF METAL NANOPARTICLES - The invention relates to a method for preparing an aqueous-based dispersion of metal nanoparticles comprising: (a) providing an aqueous suspension of a metal salt; (b) pre-reducing the metal salt suspension by a water soluble polymer capable of metal reduction to form a metal nuclei; and (c) adding a chemical reducer to form metal nanoparticles in dispersion. The invention further relates to aqueous-based dispersions of metal nanoparticles, and to compositions such as ink comprising such dispersions. | 09-27-2012 |
20120241694 | Electronic, Especially Optical or Optoelectronic Component, and Method for the Production Thereof - Electronic, in particular optical or optoelectronic, component comprising a device which comprises a thermoplastic material which has particles which comprise a core and a shell, wherein the shell is disposed on the surface of the core and wherein the core comprises aluminium. | 09-27-2012 |
20120280185 | Method for Forming an Ink - A method for forming an ink is disclosed. The method includes steps of forming at least one of metal ions and metal complex ions, forming metal chalcogenide nanoparticles, forming a first solution to include the metal chalcogenide nanoparticles and the at least one of metal ions and metal complex ions, wherein metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from group I, group II, group III or group IV of periodic table and repeating at least one forming step of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions, and forming the first solution as the ink if metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions do not include all metal elements of a chalcogenide semiconductor material. | 11-08-2012 |
20120286218 | LOW COST ALTERNATIVES TO CONDUCTIVE SILVER-BASED INKS - A method of making an electrically conductive ink is provided. This ink is suitable for use in a photovoltaic device. The method includes the steps of providing solder particles, providing a surface oxide removal material; and formulating an ink with the solder particles and the surface oxide removal material. As a result, a solder is formed. This solder maintains electrical conductivity when used in the ink at a processing temperature less than 250 C. | 11-15-2012 |
20120298928 | METHOD OF PRODUCING THERMOELECTRIC MATERIAL - A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains. | 11-29-2012 |
20130026424 | ELECTRODE AND METHOD FOR MANUFACTURING THE SAME - The invention relates to an electrode that can be formed by firing in air a conductive paste comprising a copper powder, a boron powder, an additional inorganic powder, a glass frit, and an organic medium, wherein the additional inorganic powder is zirconia powder. | 01-31-2013 |
20130048920 | CONDUCTIVE PASTE FOR SCREEN PRINTING - A conductive paste for screen printing that can be fired at a low temperature of 150° C. or less and enables printing on a plastic substrate, printing on which is impossible at high temperature, is provided. A conductive paste for screen printing includes metal nanoparticles (Y) having an average particle diameter of 1 to 50 nm and protected with an organic compound (X) containing a basic nitrogen atom, metal particles (Z) having an average particle diameter of more than 100 nm and 5 μm, a deprotecting agent (A) for the metal nanoparticles, and an organic solvent (B). An aliphatic monocarboxylic acid having 6 to 10 carbon atoms is used as the deprotecting agent (A) for the metal nanoparticles and a polyalkylene glycol is used as the organic solvent (B). | 02-28-2013 |
20130048921 | CONDUCTIVE MATERIAL - A conductive material used for connecting electrodes of a solar battery cell and wiring members, the conductive material comprising a resin binder; and a conductive particle dispersed in the resin binder, wherein the conductive particle comprises a phosphorous-containing copper alloy having a phosphorus content of 0.01% by mass or more and 8% by mass or less. | 02-28-2013 |
20130056687 | CONDUCTIVE PASTE FOR SCREEN PRINTING - Provided is a conductive paste for screen printing, capable of being baked at a low temperature of 150° C. or lower and being printed on a plastic substrate that cannot be subjected to printing at high temperatures. The conductive paste for screen printing contains metal nanoparticles (Y) protected by an organic compound (X) containing a basic nitrogen atom; a deprotecting agent (A) for the metal nanoparticles; and an organic solvent (B), wherein an aliphatic monocarboxylic acid having 6 to 10 carbon atoms and/or an unsubstituted aliphatic dicarboxylic anhydride is used as the deprotecting agent (A) for the metal nanoparticles, and a polyalkylene glycol is used as the organic solvent (B). | 03-07-2013 |
20130062578 | DIELECTRIC COMPOSITION, METHOD OF FABRICATING THE SAME, AND MULTILAYER CERAMIC ELECTRONIC COMPONENT USING THE SAME - There are provided a dielectric composition, a method of fabricating the same, and a multilayer ceramic electronic component using the same. The dielectric composition includes a perovskite powder particle having a surface on which a doping layer is formed, the doping layer being doped with at least one material selected from a group consisting of alkaline earth elements and boron group elements, and rare earth elements. | 03-14-2013 |
20130062579 | APPARATUSES AND SYSTEMS FOR DENSITY GAUGE CALIBRATION and REFERENCE EMULATION - Apparatuses and systems for emulating electrical characteristics of a material having a known dielectric constant or property are disclosed for standardizing and calibrating of electromagnetic devices. The emulator apparatus can include an electrically non-conductive layer having a dielectric constant less than the material dielectric constant and an electrically conductive layer adjacent the non-conductive layer. Artificial dielectrics for emulating the dielectric constant of a material are also disclosed including a substrate matrix having a dielectric constant less than the material dielectric constant and an additive combined with the substrate, the additive having a dielectric constant higher than the material dielectric constant. Artificial dielectrics may simulate the frequency response of a material relating to a specific property. | 03-14-2013 |
20130069014 | CONDUCTIVE PASTE COMPOSITION FOR LOW TEMPERATURE FIRING - Disclosed is a conductive paste composition for low temperature firing, including conductive copper powder composed of flake powder, spherical powder and nano powder, a melamine-based binder, and an organic solvent, thus enabling the formation of a conductive wire having a high aspect ratio with high printability, and inexpensive formation of a metal wire, and exhibiting superior electrical properties and adhesive force even when conducting low temperature firing at 200° C. or less, so that the conductive paste composition can be usefully applied as a conductive material for forming electrodes of a variety of products such as solar cells, touch panels, printed circuit boards (PCBs), radio-frequency identification (RFID), plasma display panels (PDPs) and so on. | 03-21-2013 |
20130069015 | ELECTRODE FOR ELECTRIC-DISCHARGE SURFACE TREATMENT AND ELECTRIC-DISCHARGE SURFACE TREATMENT COATING - In order to establish an electric-discharge surface treatment capable of forming a smooth high-hardness coating, in the electric-discharge surface treatment in which pulsed electric discharge is generated between the electrode and a base material in a machining fluid or in the air by using a green compact, which is formed by compressing powder of an electrode material, as an electrode, and by using energy of the electric discharge, a coating including the electrode material or a reaction product of the electrode material reacted by the electric discharge energy is formed on a surface of the base material, wherein, as the powder of the electrode material, a mixed powder formed by mixing 10 to 75 vol % of Si powder to powder of a hard material is used. | 03-21-2013 |
20130082216 | Single-Source Precursor for Semiconductor Nanocrystals - A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions. | 04-04-2013 |
20130092883 | HIGHLY-CONFINED SEMICONDUCTOR NANOCRYSTALS - A high confinement semiconductor nanocrystal and method for making such nanocrystal are described. The nanocrystal includes a compact homogenous semiconductor region having a first composition in the center area of the nanocrystal, with its diameter being less than 2.0 nm; and a gradient alloy region comprised of a second varying alloy composition which extends from the surface of the compact homogenous semiconductor region to the surface of the nanocrystal. | 04-18-2013 |
20130126796 | Production Method for a Transparent Conductive Film and a Transparent Conductive Film Produced Thereby - Provided is a production method for a transparent conductive film wherein: a substrate has formed thereon a transparent conductive oxide, a conductive metal body, and a conductive polymer comprised in a transparent composite conductive layer; or else a substrate has formed thereon a transparent conductive oxide layer; a conductive metal body layer, and a conductive polymer layer comprised in a transparent composite conductive layer; or a substrate has formed thereon a transparent conductive oxide layer, and also a conductive metal body and a conductive polymer comprised in an organic-inorganic hybrid layer in a transparent composite conductive layer. Also provided is a transparent conductive film produced by means of the method. | 05-23-2013 |
20130126797 | SOLAR CELL AND PASTE COMPOSITION FOR REAR ELECTRODE OF THE SAME - A paste composition for a rear electrode of a solar cell according to the embodiment includes conductive powder; an organic vehicle; and an additive including silicon or a metal. | 05-23-2013 |
20130161571 | COPPER ORGANIC METAL, METHOD FOR PREPARING COPPER ORGANIC METAL AND COPPER PASTE - Disclosed herein are a copper organic metal, a method for preparing a copper organic metal and a copper paste. The copper organic metal is constituted to combine a copper atom, [R—CO | 06-27-2013 |
20130181173 | SINTERED COMPOSITE OXIDE, MANUFACTURING METHOD THEREFOR, SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE FILM, AND MANUFACTURING METHOD THEREFOR - A sintered composite oxide | 07-18-2013 |
20130214215 | ZINC OXIDE SINTERED COMPACT, SPUTTERING TARGET, AND ZINC OXIDE THIN FILM - There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 Ω·cm or greater. | 08-22-2013 |
20130221286 | SILICON/GERMANIUM NANOPARTICLE INKS, LASER PYROLYSIS REACTORS FOR THE SYNTHESIS OF NANOPARTICLES AND ASSOCIATED METHODS - Laser pyrolysis reactor designs and corresponding reactant inlet nozzles are described to provide desirable particle quenching that is particularly suitable for the synthesis of elemental silicon particles. In particular, the nozzles can have a design to encourage nucleation and quenching with inert gas based on a significant flow of inert gas surrounding the reactant precursor flow and with a large inert entrainment flow effectively surrounding the reactant precursor and quench gas flows. Improved silicon nanoparticle inks are described that has silicon nanoparticles without any surface modification with organic compounds. The silicon ink properties can be engineered for particular printing applications, such as inkjet printing, gravure printing or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon nanoparticles. | 08-29-2013 |
20130221287 | METAL PARTICLE AND METHOD FOR PRODUCING THE SAME - A metal particle which is a non-nucleated, spherical porous material having continuous open pores, and which is formed from dendritic crystals which have grown uniformly outward from the center without requiring a nucleating agent. A method for producing a metal particle which includes the steps of: mixing a metal salt and a polycarboxylic acid in a liquid phase; adding a reducing agent to the resultant mixture to deposit metal particles; and drying the deposited metal particles. The metal particle produced by the method, which is a non-nucleated, spherical porous material having continuous open pores, is unlikely to suffer bonding or aggregation of the metal particles and exhibits excellent dispersibility, and, when the metal particle is used in a conductive composition, such as a conductive paste, a cured product having satisfactory conduction properties can be obtained at a relatively low temperature, making it possible to easily control the specific gravity or resistance. | 08-29-2013 |
20130248775 | FINE COATED COPPER PARTICLES AND METHOD FOR PRODUCING SAME - Provided are fine coated copper particles, which are fine with a narrow particle size distribution and superior storability, and which can be sintered at low temperatures. Specifically provided is a method for producing fine coated copper particles which is characterized by including: a step of mixing a copper-containing compound and a reducing compound to form a composite compound that is capable of thermal decomposition to generate copper in an alkylamine; and a step of heating the composite compound in the alkylamine to produce fine copper particles coated with the alkylamine. | 09-26-2013 |
20130270488 | METAL PARTICLE POWDER AND PASTE COMPOSITION USING SAME - It is important that the metal particles used in a conductive paste used for wiring have the characteristic of being easily dispersed in a polar solvent in combination with another material such as a resin used in a paste. Provided is a metal particle powder which exhibits a pH value of 6 or less when 0.5 g of the metal particles to be evaluated are added to 100 mL of a potassium hydroxide solution with a pH of 11, and then an aqueous nitric acid solution in an amount in which pH becomes 5 by adding 0.10 mol/L nitric acid to 100 mL of a potassium hydroxide solution and 10 mL of ethyl alcohol (blank solution) with a pH of 11 is added. | 10-17-2013 |
20130277621 | POLYMER PARTICLE - A heat-treated polymer particle comprising an addition polymer core particle which has had swollen and polymerised therein a blend of an aromatic alcohol with an aldehyde or a blend of an aromatic amine or urea with an aldehyde and which has been subsequently heat treated, e.g. to a temperature of at least 150° C. | 10-24-2013 |
20130299752 | REUSE PASTE MANUFACTURING METHOD AND REUSE PASTE - A method of manufacturing a reuse paste includes the steps of preparing a fiber piece housing paste, fabricating a filtered recovery paste and fabricating a reuse paste. At the step of preparing a fiber piece housing paste, there is prepared a fiber piece housing paste including a conductive paste having conductive powder and a resin, and a fiber piece taken away from a prepreg to be used for manufacturing a circuit board. At the step of fabricating a filtered recovery paste, the fiber piece housing paste in a paste state is filtered as it is by using a filter and a filtered recovery paste is thus fabricated. At the step of fabricating a reuse paste, at least one of a solvent, a resin and a paste having a different composition from the filtered recovery paste is added to the filtered recovery paste, and the reuse paste is thus fabricated. | 11-14-2013 |
20130313487 | PLASTIC MOLDING COMPOSITION AND SINTERED PRODUCT - A plastic molding composition includes a raw powder, gelatin, a polar solvent, and a plasticizer. The raw powder contains at least one of a ceramic particle and a metal particle. The plasticizer reduces the minimum amount of the solvent necessary to give flowability to the composition. The plasticizer is a water-soluble or water-dispersible compound. The plasticizer has a ratio of hydroxyl number to carbon number per molecule in a range from 8% to 100%. The plasticizer is in solid or liquid form. When the plasticizer is in liquid form, the plasticizer has volatility equal to or lower than volatility of water. | 11-28-2013 |
20130320275 | Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof - In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component. | 12-05-2013 |
20130327994 | METHOD OF MANUFACTURING REUSE PASTE, REUSE PASTE AND METHOD OF MANUFACTURING CIRCUIT BOARD USING REUSE PASTE - A method of manufacturing a reuse paste includes preparing a fiber piece housing paste, producing a filtered recovery paste, and producing a reuse paste. In the preparing of the fiber piece housing paste, a conductive paste including a conductive particle, resin and a latent curing agent, and a fiber piece housing paste including a fiber piece dropping off from a prepreg used for manufacturing a circuit board are prepared. In the producing of the filtered recovery paste, the filtered recovery paste is produced by filtering the fiber piece housing paste, which remains in a paste state, by using a filter. In the production of the reuse paste, the reuse paste is produced by adding at least one of a solvent, resin, and a paste having a different composition from that of the filtered recovery paste into the filtered recovery paste. | 12-12-2013 |
20130334469 | AL-SB-TE PHASE CHANGE MATERIAL USED FOR PHASE CHANGE MEMORY AND FABRICATION METHOD THEREOF - The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Al | 12-19-2013 |
20140001418 | PURIFICATION OF METAL NANOSTRUCTURES FOR IMPROVED HAZE IN TRANSPARENT CONDUCTORS MADE FROM THE SAME | 01-02-2014 |
20140034882 | ANISOTROPIC CONDUCTIVE FILM, COMPOSITION FOR THE SAME, AND APPARATUS INCLUDING THE SAME - An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, wherein the anisotropic conductive film has an electrical conductivity of more than 0 μS/cm to about 100 μS/cm. | 02-06-2014 |
20140042374 | ANISOTROPIC CONDUCTIVE FILM, COMPOSITION FOR THE SAME, AND APPARATUS INCLUDING THE SAME - An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the anisotropic conductive film has a halogen ion content of more than 0 ppm to about 100 ppm. | 02-13-2014 |
20140048749 | Conductive Ink Composition - A representative printable composition comprises a liquid or gel suspension of a plurality of conductive particles; a first solvent comprising a polyol or mixtures thereof, such as glycerin, and a second solvent comprising a carboxylic or dicarboxylic acid or mixtures thereof, such as glutaric acid. In various embodiments, the conductive particles are comprised of a metal, a semiconductor, an alloy of a metal and a semiconductor, or mixtures thereof, and may have sizes between about 5 nm to about 1.5 microns in any dimension. A representative conductive particle ink can be printed and annealed to produce a conductor. | 02-20-2014 |
20140061549 | Manufacturing and Applications of Metal Powders and Alloys - Disclosed is a process to reduce mixtures of at least one metal halide by molten metal reduction of the liquid phase metal halide in an alkali or alkaline earth metal to form a reaction product comprising at least one metal mixture and a halide salt coating, in which the at least one metal halide is in stoichiometric excess to the molten metal reductant and wherein the reductant is consumed in the reaction and does not need to be removed at the end of the reaction. | 03-06-2014 |
20140084221 | Coated Aluminum Alloy Pigments and Corrosion-Resistant Coatings - This invention relates to galvanic aluminum alloy powder-pigments coated with semi-conducting corrosion inhibiting compositions and to the process for preparing said coated powder-pigments for coating metal substrates to inhibit corrosion. The coated aluminum alloy powder-pigments are electrically active and prevent corrosion of metals which are more cathodic (electropositive) than the coated aluminum alloy pigments. | 03-27-2014 |
20140084222 | SILICON NANOPARTICLE DISPERSIONS - Polymer-inorganic particle blends are incorporated into structures generally involving interfaces with additional materials that can be used advantageously for forming desirable devices. In some embodiments, the structures are optical structures, and the interfaces are optical interfaces. The different materials at the interface can have differences in index-of-refraction to yield desired optical properties at the interface. In some embodiments, structures are formed with periodic variations in index-of-refraction. In particular, photonic crystals can be formed. Suitable methods can be used to form the desired structures. | 03-27-2014 |
20140124712 | THIN FILM SEMICONDUCTOR MATERIAL PRODUCED THROUGH REACTIVE SPUTTERING OF ZINC TARGET USING NITROGEN GASES - The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility. | 05-08-2014 |
20140151611 | TRANSPARENT CONDUCTING OXIDE MATERIAL AND METHODS OF PRODUCING SAME - The invention relates to a new type of material and describes a novel material and way to improve the transparency of a transition metal oxide by employing an anionic doping strategy to modify the transparency. At the same time a cationic dopant is used to improve conductivity. | 06-05-2014 |
20140158950 | SURFACE CHEMICAL MODIFICATION OF NANOCRYSTALS - Nanocrystals comprising organic ligands at surfaces of the plurality of nanocrystals are provided. The organic ligands are removed from the surfaces of the nanocrystals using a solution comprising a trialkyloxonium salt in a polar aprotic solvent. The removal of the organic ligands causes the nanocrystals to become naked nanocrystals with cationic surfaces. | 06-12-2014 |
20140166943 | P-AlGAN LAYER AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A p-AlGaN layer doped with magnesium is provided that includes an aluminum composition ratio x of 0.2 or more and less than 0.5 and a carrier concentration of 2.5×10 | 06-19-2014 |
20140203222 | COPPER PARTICLES, COPPER PASTE, PROCESS FOR PRODUCING CONDUCTIVE COATING FILM, AND CONDUCTIVE COATING FILM - There are provided copper particles and a copper paste for a copper powder-containing coating film which can be subjected to electroless metal plating without using an expensive catalyst such as palladium, and a process for producing a conductive coating film by subjecting a copper powder-containing coating film formed by using the copper paste to electroless metal plating or heat treatment with superheated steam. The present invention relates to a process for producing a conductive coating film comprising the step of forming a coating film on an insulating substrate using copper particles having an average particle diameter of 0.05 to 2 μm as measured by observation using SEM in which a BET specific surface area value (SSA) (m | 07-24-2014 |
20140264189 | METHOD FOR SOLVENTLESS QUANTUM DOT EXCHANGE - The present invention describes a solventless ligand exchange using a siloxane polymer having a binding ligand that displaces the binding ligand on a quantum dot material. | 09-18-2014 |
20140264190 | HIGH ENERGY MATERIALS FOR A BATTERY AND METHODS FOR MAKING AND USE - A composition for forming an electrode. The composition includes a metal fluoride compound doped with a dopant. The addition of the dopant: (i) improves the bulk conductivity of the composition as compared to the undoped metal fluoride compound; (ii) changes the bandgap of the composition as compared to the undoped metal fluoride compound; or (iii) induces the formation of a conductive metallic network. A method of making the composition is included. | 09-18-2014 |
20140306165 | METHOD OF MANUFACTURING NON-FIRING TYPE ELECTRODE - A method of manufacturing a non-fired type electrode comprising the steps of: (a) applying a conductive paste on a substrate, the conductive paste comprising; (i) 100 parts by weight of a conductive powder; (ii) an organic boron compound comprising an amine borate, a boronic acid, a boronic acid ester, a trimer of the boronic acid or a mixture thereof, wherein the boron element of the organic boron compound is 0.03 to 1.4 parts by weight; and (iii) 20 to 150 parts by weight of an organic vehicle; and (b) heating the applied conductive paste at 100 to 300° C. | 10-16-2014 |
20140367619 | PHOTONIC SINTERING OF POLYMER THICK FILM COPPER CONDUCTOR COMPOSITIONS - This invention provides a method for using a polymer thick film copper conductor composition to form an electrical conductor in an electrical circuit, the method subjecting the deposited thick film copper conductor composition to photonic sintering. The invention also provides a method for reducing the resistance of an electrical conductor formed from a polymer thick film conductor composition, the method comprising the step of subjecting the electrical conductor to photonic sintering. The invention further provides devices containing electrical conductors made by these methods. The invention also provides a polymer thick film copper conductor composition. | 12-18-2014 |
20150028268 | METHOD FOR MANUFACTURING HIGHLY PURE SILICON, HIGHLY PURE SILICON OBTAINED BY THIS METHOD, AND SILICON RAW MATERIAL FOR MANUFACTURING HIGHLY PURE SILICON - Provided are a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon. | 01-29-2015 |
20150069306 | DISPERSANT AND METHOD FOR PRODUCING SAME, INK, AND METHOD FOR FORMING ELECTRO-CONDUCTIVE PATTERN - Provided is a dispersant used for dispersion of metal particles, the dispersant including: a constituent unit derived from a compound represented by General Formula (I) below; and a constituent unit derived from a compound having an ionic group, | 03-12-2015 |
20150144849 | COMPOSITE COPPER PARTICLES, AND METHOD FOR PRODUCING SAME - The disclosed composite copper particle includes a core particle including copper, and a coating layer including a copper-tin alloy and formed on the surface of the core particle, the composite copper particle having a particle diameter at 50% cumulative volume in the particle size distribution of 0.1 to 10.0 μm. The alloy is preferably CuSn. The ratio of tin to the the composite copper particle is preferably 3.0 to 12.0 mass %. The composite copper particle is suitably obtained by a method including a step of mixing a reducing agent for tin and an aqueous slurry containing a tin source compound and core particles which include copper, to form a coating layer including a copper-tin alloy on a surface of the core particles. | 05-28-2015 |
20150303325 | COMPOSITION FOR FORMING SOLAR CELL ELECTRODE AND ELECTRODE PRODUCED FROM SAME - A composition for solar cell electrodes and electrodes fabricated using the same. The composition includes a silver (Ag) powder; a first glass frit containing PbO and a second glass frit containing V | 10-22-2015 |
20150332802 | POLYAMIDE RESIN COMPOSITION - Disclosed is a polyamide resin composition, which includes a polyamide resin and 5˜100 parts by weight of a polypropylene resin, 10˜135 parts by weight of glass fiber, and 0.1˜8 parts by weight of a phenolic heat-resistance agent, based on 100 parts by weight of the polyamide resin, and which also has low ion release, few changes in properties even when being exposed to external environment of high or low temperature, and high productivity, thus making it easy to serve as a material for a humidifier for a fuel cell membrane for vehicles. | 11-19-2015 |
20150344715 | OXIDATION RESISTANT COPPER NANOPARTICLES AND METHOD FOR PRODUCING SAME - The present invention relates to oxidation resistant copper nanoparticles, and to a method for producing the same, which includes the steps of: preparing a first solution composed of a solvent, a polymer, and an organic acid; stirring the first solution to produce a first stirred solution; mixing the first stirred solution, a copper precursor, and a first reducing agent to produce a second reactant solution; mixing a second reducing agent with the second reactant solution to produce a third reactant solution; and collecting copper nanoparticles separated from the third reactant solution, which is a very simple process performing the reactions at a normal temperature under atmospheric conditions to produce copper nanoparticles, and an eco-friendly method firstly applying a watery solvent so as to achieve mass production of copper nanoparticles only by mixing solutions. In particular, the copper nanoparticles according to the present invention may have excellent oxidation resistant properties to prevent them from being oxidized for three months or more even when preserved at a normal temperature under atmospheric conditions. | 12-03-2015 |
20150380500 | Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE | 12-31-2015 |
20160004125 | CONDUCTIVE ALIGNMENT LAYER, MANUFACTURE METHOD OF THE CONDUCTIVE ALIGNMENT LAYER, DISPLAY SUBSTRATE COMPRISING THE CONDUCTIVE ALIGNMENT LAYER, AND DISPLAY DEVICE - Disclosed are a conductive alignment layer, a manufacture method of the conductive alignment layer, a display substrate comprising the conductive alignment layer and a display device which relate to the technology of LCD, simplify the manufacture method of conductive layer and alignment layer and also reduce the complexity in manufacturing a LCD device by preparing the conductive layer and the alignment layer in the substrate simultaneously through utilizing a material possessing both conductivity and alignment, without the need of preparing the conductive layer and the alignment layer separately. | 01-07-2016 |
20160005504 | ELECTROCONDUCTIVE MICROPARTICLES, ANISOTROPIC ELECTROCONDUCTIVE MATERIAL, AND ELECTROCONDUCTIVE CONNECTION STRUCTURE - The present invention aims to provide electroconductive microparticles which are less likely to cause disconnection due to breakage of connection interfaces between electrodes and the electroconductive microparticles even under application of an impact by dropping or the like and are less likely to be fatigued even after repetitive heating and cooling, and an anisotropic electroconductive material and an electroconductive connection structure each produced using the electroconductive microparticles. The present invention relates to electroconductive microparticles each including at least an electroconductive metal layer, a barrier layer, a copper layer, and a solder layer containing tin that are laminated in said order on a surface of a core particle made of a resin or metal, the copper layer and the solder layer being in contact with each other directly, the copper layer directly in contact with the solder layer containing copper at a ratio of 0.5 to 5% by weight relative to tin contained in the solder layer. | 01-07-2016 |
20160012934 | Composite Formulation and Composite Product | 01-14-2016 |
20160020414 | QUANTUM DOTS COMPOSITE PARTICLES AND THEIR PREPARATION METHOD, PHOTOELECTRIC ELEMENTS AND PHOTOELECTRIC EQUIPMENTS - The invention refers to quantum dots (QDs) composite particles and their preparation method, photoelectric elements and photoelectric equipment. The preparation method of QDs composite particles comprises: coating the surface of metal nanoparticles (MNPs) with silica; modifying the silica coated MNPs through amination to make the surface of the silica have amino functional groups; and combining the carboxyl-functionalized QDs with amino-functionalized silica coated MNPs, thereby preparing the QDs composite particles. The preparation method can enhance the fluorescent efficiency of QDs. | 01-21-2016 |
20160035455 | PHOTONIC SINTERING OF POLYMER THICK FILM COPPER CONDUCTOR COMPOSITIONS - This invention provides a method for using a polymer thick film copper conductor composition to form an electrical conductor in an electrical circuit, the method subjecting the deposited thick film copper conductor composition to photonic sintering. The invention also provides a method for reducing the resistance of an electrical conductor formed from a polymer thick film conductor composition, the method comprising the step of subjecting the electrical conductor to photonic sintering. The invention further provides devices containing electrical conductors made by these methods. The invention also provides a polymer thick film copper conductor composition. | 02-04-2016 |
20160056362 | METHOD OF PRODUCING THERMOELECTRIC MATERIAL - A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains. | 02-25-2016 |
20160056448 | SINGLE-STEP SYNTHESIS OF NANOSTRUCTURED THIN FILMS BY A CHEMICAL VAPOR AND AEROSOL DEPOSITION PROCESS - The present disclosure is generally directed to a single-step synthesis of nanostructured thin films by a chemical vapor and aerosol deposition (CVAD) process. The present disclosure is also directed to methods for controlling the morphology of the nanostructured thin films. The films can be used, for example, in lithium ion and/or sodium ion battery electrodes, solar cells and gas sensors. | 02-25-2016 |
20160072033 | Nano-Structured Porous Thermoelectric Generators - Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate nano-sized doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Substantially oxidant-free and doped silicon particulates are fractured and sintered to form a porous nano-sized silicon-based thermoelectric material. | 03-10-2016 |
20160108547 | METHOD FOR OBTAINING MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE OBTAINED BY THIS METHOD - The object of the invention is a method for obtaining monocrystalline gallium-containing nitride, from gallium-containing feedstock in the environment of supercritical ammonia-containing solvent with the addition of a mineraliser, containing an element of Group I (IUPAC, 1989), wherein, in an autoclave, two temperature zones are generated, i.e. a dissolution zone of lower temperature, containing feedstock, and, below it, a crystallisation zone of higher temperature, containing at least one seed, a dissolution process of the feedstock and a crystallisation process of the gallium-containing nitride on the at least one seed are carried out, characterised in that at least two additional components are introduced into the process environment, namely:
| 04-21-2016 |
20160114390 | FLAKE-LIKE SILVER POWDER, CONDUCTIVE PASTE, AND METHOD FOR PRODUCING FLAKE-LIKE SILVER POWDER - Provided are a flaky-like silver powder having a low bulk density as well as a predetermined average particle size (D | 04-28-2016 |
20160125970 | CORE-SHELL NANO PARTICLE FOR FORMATION OF TRANSPARENT CONDUCTIVE FILM, AND MANUFACTURING METHOD OF TRANSPARENT CONDUCTIVE FILM USING THE SAME - Disclosed herein are a core-shell nano particle for formation of a transparent conductive film, a manufacturing method of the core-shell nano particle, and a manufacturing method of a transparent conductive film using the core-shell nano particle and, more particularly, a core-shell structured nano particle consisting of a core including indium or indium oxide and a shell including tin, a manufacturing method of the core-shell structured nano particle, and a manufacturing method of a transparent conductive film including (i) dispersing a core-shell structured nano particle into a solvent to manufacture a coating liquid, (ii) applying the coating liquid onto a substrate to form a coating layer, (iii) drying the coating layer, and (iv) performing an annealing process on the coating layer. | 05-05-2016 |
20160181497 | THERMOELECTRIC MATERIALS | 06-23-2016 |