Entries |
Document | Title | Date |
20080210888 | EXPOSURE APPARATUS, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD - A pattern image generation device generates a pattern image, and at least a part of the pattern image which has been generated or the pattern image which is generated and is formed on an object is photoelectrically detected by a detection system. Then, a correction device corrects design data that should be input to the pattern image generation device based on the detection results. Accordingly, a pattern image is generated on an object by the pattern image generation device corresponding to the input of the design data after the correction, and because the object is exposed using the pattern image, a desired pattern is formed on the object with good precision. | 09-04-2008 |
20080230725 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, AND LIGHT MODULATION ELEMENT - A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below. | 09-25-2008 |
20080237497 | PIXELATED MODULATION OF ILLUMINATION PUPIL IMAGE - The present invention describes a method of conditioning radiation upstream from a reticle including: pixelating the radiation, the pixelating involving partitioning into pixels; modulating a first set of the pixels to configure for openings; modulating a second set of the pixels to outline for specific features of the openings; modulating a third set of the pixels to correct for local non-uniformities; modulating a fourth set of the pixels to compensate for global non-uniformities; and modulating a fifth set of the pixels to establish for gray scale. | 10-02-2008 |
20080245975 | Electrically Programmable Reticle and System - An electrically programmable reticle is made using at least one electrochromatic layer that changes its optical transmissibility in response to applied voltages. Transparent conductor layers are configured to the desired patterns. The electrically programmable reticles are either patterned in continuous forms that have separately applied voltages or in a matrix of rows and columns that are addressed by row and column selects such that desired patterns are formed with the application of a first voltage level and reset with the application of a second voltage level. | 10-09-2008 |
20080277598 | Electron beam exposure apparatus - An electron beam exposure apparatus includes: an electron gun for generating an electron beam; a deflector for deflecting the electron beam; a wafer stage; a stage position detector for detecting a position of the wafer stage; and a stage position computing unit for calculating a movement velocity of the wafer stage. On a basis of the movement velocity, the stage position computing unit calculates an amount of positional change of the wafer stage with respect to an interpolation time, and subsequently calculates an amount of positional movement of the wafer stage by sequentially adding the amount of positional change to the position of the wafer stage in synchronism with the interpolation time. Thus, the stage position computing unit calculates an amount of deflection of the electron beam corresponding to the amount of the positional movement of the wafer stage. | 11-13-2008 |
20080277599 | Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby - A device constructed to generate radiation includes a liquid bath, and a pair of electrodes. At least a part of one of the electrodes is formed by a cable part moveable with respect to the liquid bath. The device also includes an actuator arranged to move the cable part from a liquid-adhering position to an ignition position, and an ignition source configured to trigger a discharge produced radiating plasma from the liquid adherent to the cable part, when the cable part is in the ignition position, by a discharge between the electrodes. The liquid-adhering position is a position for adhering a liquid from the bath to the part of the electrode. | 11-13-2008 |
20080290300 | CRYSTALLIZATION APPARATUS AND CRYSTALLIZATION METHOD - A crystallization apparatus is provided. In the crystallization apparatus, a light intensity distribution formed by a light modulation device or a metal aperture and transferred to a processed substrate can be visualized. The crystallization apparatus has an ultraviolet (UV) irradiation system and a visible light irradiation system. The UV irradiation system irradiates pulses of laser beam in the UV range to the processed substrate. The visible light irradiation system continuously irradiates a visible light laser beam on the same irradiated region on the processed substrate. In a melted region resulted from the uniform irradiation of the laser beam in the UV range, the light intensity distribution of the visible laser beam is used to form crystal growth. The crystallization apparatus irradiates pulses of the laser beam in the UV range to melt the processed substrate, and continuously irradiates the visible light laser beam to crystallize the processed substrate. | 11-27-2008 |
20080302980 | Extreme ultra-violet lithographic apparatus and device manufacturing method - An extreme ultra-violet lithographic apparatus for imaging a pattern onto a substrate includes a radiation system constructed and arranged to provide a beam of an extreme ultra-violet radiation, and an absorber arranged in the beam and constructed and arranged to absorb at least a portion of the radiation beam. The absorber has a volume configured to accommodate a flow of an absorbing gas. The flow is directed in a transverse direction with respect to the beam. The absorber includes a structure having an extreme ultra-violet radiation-transmissive beam entry area and an extreme ultra-violet radiation-transmissive beam exit area. The apparatus also includes a gas inlet actuator array configured to inject the gas into the volume and a gas outlet actuator array arranged to evacuate the gas from the volume. | 12-11-2008 |
20080308751 | MULTI-FUNCTION MODULE FOR AN ELECTRON BEAM COLUMN - A multifunction module for an electron beam column comprises upper and lower electrodes, and a central ring electrode. The upper and lower electrodes have multipoles and are capable of deflecting, or correcting an aberration of, an electron beam passing through the electrodes. A voltage can be applied to the central ring electrode independently of the voltages applied to the upper and lower electrodes to focus the electron beam on a substrate. | 12-18-2008 |
20090001292 | EXPOSURE DEVICE - The present invention relates to an exposure device for forming circuit patterns onto a surface of an object. The exposure device includes at least one spatial light modulator which includes a plurality of reflection elements being arranged in a matrix fashion, at least one optical source which supplies exposure light to the reflection elements, and a bias voltage controller which applies a first voltage to the reflection elements, thereby setting the reflection elements to a first state and which does not apply a voltage to the reflection elements, thereby setting the reflection elements to a second state. In addition, the exposure light is delivered to the surface of the object in the first state, and the exposure light is not delivered to the surface of the object in the second state. | 01-01-2009 |
20090001293 | CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing method includes writing a pattern on a first target object by using a charged particle beam in a writing apparatus; and conveying a second target object after having written the pattern on the first target object, wherein even though the second target object is arranged on any one of conveying paths including a carry-out port and a carry-in port of the writing apparatus, a conveying operation for the second target object is not performed during writing the pattern on the first target object. | 01-01-2009 |
20090032738 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD THEREOF - A charged particle beam writing apparatus includes a dividing unit configured to virtually divide a writing region of a target workpiece into a plurality of small regions along a writing direction, a calculating unit configured to calculate a writing speed of each of the plurality of small regions by using a linear programming and a writing unit configured to write a desired pattern in each of the plurality of small regions at the writing speed calculated for each of the plurality of small regions by using a charged particle beam. | 02-05-2009 |
20090057575 | CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD - A charged particle beam lithography apparatus includes a first block area divider configured to divide a pattern forming area into a plurality of first block areas in order to make a number of shots when forming a pattern substantially equal; an area density calculator configured to calculate, using a plurality of small areas obtained by virtually dividing the pattern forming area into mesh areas of a predetermined size smaller than all of the first block areas, a pattern area density of each small area positioned therein for each of the first block areas; a second block area divider configured to re-divide the pattern forming area divided into the plurality of first block areas into a plurality of second block areas of a uniform size, which is larger than the small area; a corrected dose calculator configured to calculate, using the pattern area density of each small area, a proximity effect-corrected dose in each corresponding small area positioned inside the second block area for each of the second block areas; a beam dose calculator configured to calculate, using the proximity effect-corrected dose of each small area, a beam dose of a charged particle beam in each corresponding small area; and a pattern generator configured to form a predetermined pattern on a target object by irradiating a charged particle beam of the beam dose calculated for each of the small areas. | 03-05-2009 |
20090065711 | Charged particle beam exposure system - A charged particle beam exposure apparatus for transferring a pattern onto a surface of a target, comprising a beam generator comprising a plurality of n changed particle sources, substantially in one plane, each source adapted for generating a charged particle beam, a first aperture array, comprising a plurality of groups of apertures, each group of apertures aligned with one source, for splitting each beam up into a plurality of beamlets m, thus resulting in a total of n×m beamlets, and a deflector array, comprising a plurality of groups of deflectors, each group of deflectors aligned with one source and one group of apertures, each deflector in a group aligned with an aperture of the corresponding group, and each group of deflectors operable for asserting a collimating influence on its corresponding beam. | 03-12-2009 |
20090084989 | BEAM IRRADIATION APPARATUS WITH DEEP ULTRAVIOLET LIGHT EMISSION DEVICE FOR LITHOGRAPHIC PATTERN INSPECTION SYSTEM - An illumination beam irradiation apparatus for use in pattern inspection systems is disclosed, which is less in deterioration of optical components and in attenuation of illumination light. The illumination apparatus includes a light source which yields a fundamental wave, a beam-shaper unit which performs beam-shaping of the fundamental wave so that this wave has a prespecified shape, and a pattern generator unit which operates, upon receipt of the beam-shaped fundamental wave, to convert this incoming wave into illumination light with a shorter wavelength to thereby generate illumination light of a prespecified shape. The illuminator also includes an image relay unit for guiding the illumination light that was generated by the pattern generator to fall onto a workpiece under inspection, such as a photomask or else. | 04-02-2009 |
20090084990 | CHARGED-PARTICLE BEAM WRITING APPARATUS AND CHARGED-PARTICLE BEAM WRITING METHOD - A timing control circuit controls the timing for applying a voltage to a sub deflector when changing a position to be irradiated with the charged-particle beam. A control computer compares a target line width and a line width of a pattern written with the timing for applying voltage to the sub deflector changed, and determines appropriate timing for applying voltage to the sub deflector from a timing range corresponding to a predetermined allowable range of the difference between the target line width and the line width of the written pattern. The control computer then controls the timing control circuit based on the determined timing. | 04-02-2009 |
20090108215 | MASK AND METHOD FOR FORMING A SEMICONDUCTOR DEVICE USING THE SAME - A mask is formed with first contact patterns in first columns and second contact patterns in second columns. Each first column is formed between adjacent second columns. The first contact pattern in each first column is aligned with the first contact patterns in the other first columns. The second contact pattern in each second column is aligned with the second contact patterns in the other second columns. The first contact patterns in each first column are not aligned with the second contact patterns in the second columns. Patterning is performed using the mask to secure the size of the contact patterns and to improve a process margin when manufacturing semiconductor devices. | 04-30-2009 |
20090127477 | Laser irradiation apparatus and laser irradiation method - A laser beam having homogeneous intensity distribution is delivered without causing interference stripes of a laser to appear on an irradiation surface. A laser beam emitted from a laser oscillator passes through a diffractive optical element so that the intensity distribution thereof is homogenized. The beam emitted from the diffractive optical element then passes through a slit so that low-intensity end portions in a major-axis direction of the beam are blocked. Subsequently, the beam passes through a projecting lens and a condensing lens, so that an image of the slit is projected onto the irradiation surface. The projecting lens is provided so that the slit and the irradiation surface are conjugated. Thus, the irradiation surface can be irradiated with the laser having homogeneous intensity while preventing the diffraction by the slit. | 05-21-2009 |
20090134343 | TRACKING CONTROL METHOD AND ELECTRON BEAM WRITING SYSTEM - Control data for a main deflector is calculated based on position data that specifies the position of a region to be irradiated with the electron beam on the subfield, data on the number of all beam shots on the subfield, data on a time required for all the beam shots, and stage data that specifies the position of the stage. When the number of beam shots on one of the divided subfield sections reaches the obtained number of the beam shots on each of the divided subfield sections, a writing process proceed to a writing operation to be performed on another one of the divided subfield sections based on the direction of the movement of the stage. | 05-28-2009 |
20090146082 | Pattern Lock System for Particle-Beam Exposure Apparatus - In a pattern-lock system of particle-beam apparatus wherein the imaging of the pattern is done by means of at least two consecutive projector stages of the projecting system, reference marks are imaged upon registering means to determine the position of the particle-beam, at the location of an intermediary image of the reference marks produced by a non-final projector stage, with the registering means being positioned at locations of nominal positions of an intermediary imaging plane. Furthermore, to produce a scanning movement over the registering means the reference beamlets are shifted laterally by means of deflector means provided in the pattern defining means in dependence of a time-dependent electric voltage. | 06-11-2009 |
20090184264 | LASER ANNEALING FOR 3-D CHIP INTEGRATION - A laser annealing method for annealing a stacked semiconductor structure having at least two stacked layers is disclosed. A laser beam is focused on a lower layer of the stacked layers. The laser beam is then scanned to anneal features in the lower layer. The laser beam is then focused on an upper layer of the stacked layers, and the laser beam is scanned to anneal features in the upper layer. The laser has a wavelength of less than one micrometer. The beam size, depth of focus, energy dosage, and scan speed of the laser beam are programmable. Features in the lower layer are offset from features in the upper layer such that these features do not overlap along a plane parallel to a path of the laser beam. Each of the stacked layers includes active devices, such as transistors. Also, the first and second layers may be annealed simultaneously. | 07-23-2009 |
20090184265 | ELECTRON BEAM WRITING METHOD, FINE PATTERN WRITING SYSTEM, AND MANUFACTURING METHOD OF UNEVEN PATTERN CARRYING SUBSTRATE - A fine pattern, to be formed on a discrete track medium, which includes servo patterns, each constituted by servo elements, and groove patterns, each for separating adjacent data tracks, is formed on a substrate applied with a resist and placed on a rotation stage by scanning an electron beam on the substrate. While rotating the substrate in one direction, the electron beam is X-Y deflected to scan servo elements corresponding to a plurality of tracks during one rotation of the substrate. Each groove pattern is set as a line-up of a plurality of groove elements divided at a predetermined angle, and groove elements corresponding to the plurality of tracks following the writing of the servo elements are sequentially written by deflection scanning the electron beam largely in a circumferential direction during the same rotation. | 07-23-2009 |
20090200495 | PARTICLE-BEAM EXPOSURE APPARATUS WITH OVERALL-MODULATION OF A PATTERNED BEAM - In a charged-particle exposure apparatus for exposure of a target with a beam of electrically charged particles, the illumination system includes a deflector device adapted to vary the direction of incidence of the illuminating beam upon the pattern definition device, the pattern definition device forms the shape of the illuminating beam into a desired pattern, and the projection optics system projects an image of the beam shape defined in the pattern definition device onto the target; the projection optics system includes a blocking aperture device having an opening and being adapted to block passage of beams traversing outside the opening, namely when the deflector device is activated to tilt the beamlet by a sufficient angle from its non-deflected path, e.g., for blanking out during the process of loading a pattern into the pattern definition device. | 08-13-2009 |
20090206282 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE OR PHOTOMASK - A method for manufacturing a semiconductor device or a photomask by exposing a pattern while scanning a plurality of deflection regions determined depending on a deflection width of an exposure device on an exposure target with electron beams, enables a computer to execute a step of extracting a first pattern that exists near the boundary of the deflection region and in a first deflection region, a step of searching a second pattern that is adjacent to the first pattern and in a second deflection region different from the first deflection region, and a step of performing data processing of exposure data in accordance with a width of the first pattern so as to minimize the change in distance between the extracted first pattern and the searched second pattern due to positional deviation of the deflection region. | 08-20-2009 |
20090212240 | CHARGED PARTICLE BEAM EXPOSURE SYSTEM - A charged particle beam exposure system has a blanking aperture array ( | 08-27-2009 |
20090224180 | Apparatus and method for processing a wafer - An method for processing a processing surface of a wafer by means of a processing-beam is disclosed. The method comprises moving the wafer and the processing-beam relative to each other so that the processing-beam scans the processing surface of the wafer in a scanning path having a curved course with continuously or stepwise changing radiuses. An apparatus is also disclosed. | 09-10-2009 |
20090230330 | METHOD OF REPAIRING A SPECIMEN INTENDED TO BE ANALYSED BY ELECTRON MICROSCOPY - The invention relates to a method of repairing crystal defects buried within a specimen ( | 09-17-2009 |
20090267003 | SEMICONDUCTOR EXPOSURE DEVICE USING EXTREME ULTRA VIOLET RADIATION - The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity. | 10-29-2009 |
20090278060 | PHOTOIRRADIATION APPARATUS, CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, AND DEVICE - A photoirradiation apparatus includes an optical modulation element which phase-modulates light, an illumination system to illuminate the optical modulation element, and an imaging optical system which applies the phase-modulated light to a non-single-crystal semiconductor film to form a predetermined light intensity distribution with a strip-like repetitive region having long sides adjacent to each other. The light intensity distribution has a distribution which is downwards convex along a center line in a short side direction and a center line in a long side direction of the repetitive region. The light intensity distribution includes isointensity lines each bent to form a projection from a center of the repetitive region outward in the long side direction. A radius of curvature of an end of at least one isointensity line is not more than 0.3 μm. A pitch of the repetitive region in the short side direction is not more than 2 μm. | 11-12-2009 |
20090314965 | Method and System for Manufacturing Openings on Semiconductor Devices - A method and system to form openings comprises an exposure apparatus and a mask to selectively expose a semiconductor substrate to a radiation source to transfer assist feature patterns and primary feature patterns to a photosensitive layer of the substrate. A heating apparatus eliminates the assist features by heating the substrate and shrinking the primary features. The patterns on the photosensitive layer are transferred to a layer under the photosensitive layer by an etching process. | 12-24-2009 |
20100032588 | WRITING APPARATUS AND WRITING METHOD - A writing apparatus includes a writing unit configured to write a first pattern onto a first mask substrate and a second pattern being complementary to the first pattern onto a second mask substrate using a charged particle beam, and an addition unit configured to add a positional deviation amount of the first pattern having been written on the first mask substrate to a writing position of the second pattern, wherein the writing unit writes the second pattern at the writing position on the second mask substrate, where the positional deviation amount of the first pattern has been added. | 02-11-2010 |
20100044596 | IMAGE EXPOSING METHOD AND APPARATUS - An image exposing apparatus capable of avoiding degradation in the resolution of an exposed image due to fluctuations in the traveling direction of light that focuses pixel images of the pixel sections of a spatial optical modulation device. The apparatus includes the spatial optical modulation device, such as a DMD having multitudes of pixel sections disposed two-dimensionally; a light source; and image focusing optical systems. It further includes an aperture array disposed at the image location focused by the image focusing optical systems such that each of the pixel images of the pixel sections is positioned at the plane of each of the apertures. The pixel images positioned at the aperture planes of the aperture array are focused into an image by a microlens array, which is then projected onto a photosensitive material by optical systems. | 02-25-2010 |
20100072403 | PATTERN FORMING APPARATUS AND PATTERN FORMING METHOD - A pattern forming apparatus using lithography technique includes a stage configured to allow a target object to be placed thereon; a plurality of columns configured to form patterns on the target object by using a charged particle beam while moving relatively to the stage; a pattern forming rule setting unit configured to set a pattern forming rule depending on a position of broken one of the plurality of columns; a region setting unit configured to set regions so that unbroken ones of the plurality of columns respectively form a pattern in one of the regions; a plurality of control circuits each configured to control any one of the plurality of columns different from others of the plurality of columns controlled by others of the plurality of control circuits; and a pattern forming data processing unit configured to perform a converting process on pattern forming data for the regions set to output a corresponding data generated by the converting process to the control circuit of a corresponding one of the unbroken ones of the plurality of columns respectively. | 03-25-2010 |
20100102255 | METHOD OF TRANSFERRING PATTERN OF RETICLE, COMPUTER READABLE STORAGE MEDIUM, AND METHOD OF MANUFACTURING DEVICE - A method includes setting a target pattern to be formed on a substrate using a reticle, obtaining a first pattern using the reticle and a first illumination condition, calculating, a second illumination condition under which the target pattern is transferred onto the substrate using the reticle, and a third illumination condition under which the first pattern is transferred onto a substrate using the reticle, using mathematical models each of which defines the relationship between an illumination condition and a virtual pattern transferred onto a substrate using the illumination condition, determining a fourth illumination condition, obtained by adding the difference between the calculated second illumination condition and third illumination condition to the first illumination condition, as the illumination condition, and transferring the pattern of the reticle onto the substrate by illuminating the reticle using the determined illumination condition. | 04-29-2010 |
20100155625 | Methods for concealing surface defects - Methods for removing random or uncontrolled surface defects from a work piece surface are provided, by applying a plurality of induced controlled defects over the random defects to alter the surface texture. | 06-24-2010 |
20110012035 | Method for Precision Symbolization Using Digital Micromirror Device Technology - A programmed, circuit-controlled digital micro-mirror device (DMD, | 01-20-2011 |
20110017926 | SEMICONDUCTOR INTRA-FIELD DOSE CORRECTION - A system and method are provided for automatic dose-correction recipe generation, the system including a dose-correction recipe generator, a reticle data unit in signal communication with the recipe generator, a slit data unit in signal communication with the recipe generator, a process data unit in signal communication with the recipe generator, a wafer data unit in signal communication with the recipe generator, a control unit in signal communication with the recipe generator, and an output unit or a storage unit in signal communication with the control unit; and the method including receiving a current reticle data set and a previous reticle data set, receiving a current slit data set and a previous slit data set, receiving a process condition, receiving a wafer condition, automatically generating a dose-correction recipe in accordance with the received reticle, slit, process and wafer information, and controlling a dose in accordance with the generated recipe. | 01-27-2011 |
20110042588 | Semiconductor manufacturing apparatus - Disclosed herein is a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus precisely adjusts the position and size of a light spot formed on a substrate, enabling formation of a target pattern or elimination of an unnecessary pattern in an accurate and rapid manner. The semiconductor manufacturing apparatus includes a light source, a light modulator to modulate light irradiated from the light source into a plurality of beams to correspond to a target pattern, a diffraction element to adjust a direction of each of the plurality of beams, and an optics system to allow the plurality of beams, the direction of which has been controlled by the diffraction element, to form a light spot having a target size. | 02-24-2011 |
20110068281 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND PROXIMITY EFFECT CORRECTION METHOD THEREOF - A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion. | 03-24-2011 |
20110073782 | METHOD OF AND SYSTEM FOR EXPOSING A TARGET - The invention relates to a method of exposing a target by means of a plurality of beamlets. First, a plurality of beamlets is provided. The beamlets are arranged in an array. Furthermore, a target to be exposed is provided. Subsequently, relative movement in a first direction between the plurality of beamlets and the target is created. Finally, the plurality of beamlets is moved in a second direction, such that each beamlet exposes a plurality of scan lines on the target. The relative movement in the first direction and the movement of the plurality of beamlets in the second direction are such that the distance between adjacent scan lines exposed by the plurality of beamlets is smaller than a projection pitch P | 03-31-2011 |
20110089344 | Method for Fracturing a Pattern for Writing with a Shaped Charged Particle Beam Writing System Using Dragged Shots - In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a shot determined for a shaped charged particle beam writer system comprises dragging the charged particle beam across a surface during the shot, so as to form a complex pattern in a single, extended shot. The dragging may be done with either variable shaped beam (VSB) or character projection (CP) shots. Methods for specifying in the shot data the path for the dragged shot are also disclosed. Other embodiments include using dragged shots with partial projection, varying the dragging velocity during a shot, and combining dragged shots with conventional shots. A method and system for creating glyphs which contain dragged shots is also disclosed. | 04-21-2011 |
20110089345 | METHOD AND SYSTEM FOR MANUFACTURING A SURFACE USING CHARGED PARTICLE BEAM LITHOGRAPHY - In the field of semiconductor production using shaped beam charged particle beam lithography, a pattern is formed on a surface by dragging a charged particle beam across the surface in a single extended shot to form a track. In some embodiments, the track may form a straight path, a curved path, or a perimeter of a curvilinear shape. In other embodiments, the width of the track may be altered by varying the velocity of the dragged beam. The techniques may be used for manufacturing an integrated circuit by dragging a charged particle beam across a resist-coated wafer to transfer a pattern to the wafer, or by dragging a charged particle beam across a reticle, where the reticle is used to manufacture a photomask which is then used to transfer a pattern to a wafer using an optical lithographic process. | 04-21-2011 |
20110089346 | METHOD AND SYSTEM FOR PATTERN WRITING WITH CHARGED-PARTICLE BEAM - Irradiation position errors of a first charged-particle-beam writing apparatus are calculated by scanning a charged-particle beam across a calibration substrate on which two films having different reflectances are formed, with the calibration substrate being placed inside the first writing apparatus, and by then detecting signals indicative of charged particles reflected from the calibration substrate. Irradiation position errors of a second charged-particle-beam writing apparatus are calculated in a similar manner. Then, the differences between the calculated irradiation position errors of the first writing apparatus and the calculated irradiation position errors of the second writing apparatus are calculated to correct the irradiation position errors of the second writing apparatus based on the calculated differences. | 04-21-2011 |
20110114856 | ALL-OPTICAL CONTROL OF THZ RADIATION IN PARALLEL PLATE WAVEGUIDES - The invention relates to control of THz radiation in parallel plate waveguides (PPWG) by forming components in the waveguide by use of optical radiation pulses. Patterns of excited regions induced in the PPWG by an optical excitation pulses changes the electromagnetic properties of the waveguide medium in the THz regime, thereby forming transient passive and active components for controlling THz radiation signals. The excitation can be generation of free charge carriers in a semiconductor material in the PPWG, to create metallic regions that form mirrors, lenses or photonic crystal structures in the PPWG. The photo-induced pattern can be modulated in time in response to an incoming signal, to frequency-, phase- or amplitude-modulate the THz signal. The systems can be integrated on chip-scale components and can be applied in e.g. THz communication, digital computing, sensors, and lab-on-a-chip applications. The optical and THz radiation can be ultrashort pulses with picosecond or femtosecond pulse durations. | 05-19-2011 |
20110121208 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND ELECTRICAL CHARGING EFFECT CORRECTION METHOD THEREOF - A charged particle beam drawing apparatus calculates a pattern area density distribution by using a central processing unit, calculates a dose distribution by using the central processing unit, calculates an irradiation amount distribution by using the central processing unit, performs a convolution calculation of the irradiation amount distribution and a fogging charged particle distribution by using a high speed processing unit, a processing speed of the high speed processing unit being higher than a processing speed of the central processing unit, calculates an irradiation time by using the central processing unit, calculates an elapsed time by using the central processing unit, calculates an electrical charging amount distribution by using the central processing unit, and performs a convolution calculation of the electrical charging amount distribution and a position deviation response function by using the high speed processing unit. | 05-26-2011 |
20110140007 | SEMICONDUCTOR MANUFACTURING APPARATUS - To project a rectangular laser spot having a predetermined size and a high laser power density onto the surface of an object, a semiconductor manufacturing apparatus comprises a control unit for controlling power of a laser light source, an optical waveguide unit ( | 06-16-2011 |
20110155930 | SUBSTRATE COVER AND CHARGED PARTICLE BEAM WRITING METHOD USING SAME - A substrate cover | 06-30-2011 |
20110192994 | SYSTEM AND METHOD OF ELECTRON BEAM WRITING - A system and method for improved electron beam writing that is capable of taking design intent, equipment capability and design requirements into consideration. The system and method determines an optimal writing pattern based, at least in part, on the received information. | 08-11-2011 |
20110226970 | SYSTEM AND METHOD FOR GENERATING DIRECT-WRITE PATTERN - A direct-write system is provided which includes a stage for holding a substrate, a processing module for processing pattern data and generating instructions associated with the pattern data, and an exposure module that includes beams that are focused onto the substrate and a beam controller that controls the beams in accordance with the instructions. The processing module includes vertex pair processors each having bit inverters. Each vertex pair processor is operable to process a respective vertex pair of an input scan line to generate an output scan line. Each bit inverter is operable to invert a respective input bit of the input scan line to generate a respective output bit of the output scan line if a bit position is located between the respective vertex pair, otherwise the respective input bit is copied to the respective output bit. The instructions correspond to the output bits for each beam. | 09-22-2011 |
20110253912 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A beam writing apparatus according to an embodiment includes a selection unit configured to select a dose equation from a plurality of dose equations for calculating a dose of a beam, for each small region of a plurality of small regions made by virtually dividing a writing region of a target workpiece into mesh-like regions, a dose calculation unit configured to calculate a dose of a beam which is shot into a small region of the plurality of small regions, by using a selected dose equation, for the each small region, and a writing unit configured to write a desired pattern in the small region, by using a calculated dose, for the each small region. | 10-20-2011 |
20120001097 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND CONTROL METHOD THEREOF - A charged particle beam drawing apparatus applies a predetermined dose of a charged particle beam for drawing patterns corresponding to figures included in a drawing data, in a whole of a drawing area of a workpiece, before a result of calculation of a fogging effect correction dose is obtained, wherein a proximity effect correction dose is incorporated in the predetermined dose, and the fogging effect correction dose is not incorporated in the predetermined dose, then, the charged particle beam drawing apparatus applies a predetermined dose of the charged particle beam for drawing the patterns which overlap the patterns drawn before the result of calculation of the fogging effect correction dose is obtained, in the whole of the drawing area of the workpiece, after the calculation of the fogging effect correction dose, wherein the proximity effect correction dose and the fogging effect correction dose are incorporated in the predetermined dose. | 01-05-2012 |
20120007002 | CHARGED PARTICLE BEAM PATTERN FORMING APPARATUS AND CHARGED PARTICLE BEAM PATTERN FORMING METHOD - A charged particle beam pattern forming apparatus, includes a charge amount distribution calculation unit configured to calculate a charge amount distribution charged by vertical incidence of a charged particle beam on a pattern forming region of a target object; a position correction unit configured to calculate, using the charge amount distribution charged, a corrected position of each pattern forming position corrected for a misregistration amount including a misregistration amount dependent on a deflection position where the charged particle beam is deflected, the misregistration amount caused by an amount of charge; and a pattern generator configured to form a pattern in the corrected position by using the charged particle beam. | 01-12-2012 |
20120012760 | Laser irradiation apparatus - A laser irradiation apparatus provides a laser beam along a scan direction to a semiconductor layer including a plurality of pixel areas. The laser irradiation apparatus includes at least one laser mask including a plurality of slit groups respectively facing portions of the plurality of pixel areas and a laser generator generating the laser beam that pass through the plurality of slit groups of the at least one laser mask. | 01-19-2012 |
20120025108 | Method for Fracturing and Forming a Pattern Using Curvilinear Characters with Charged Particle Beam Lithography - In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. | 02-02-2012 |
20120068089 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a unit calculating a total charge amount of charged particle beams irradiating each minimum deflection region in deflection regions having different deflection sizes respectively deflected by deflectors of a plurality of levels for deflecting charged particle beams, a unit calculating a representative temperature of the each minimum deflection region based on heat transfer from other minimum deflection regions having been written before the each minimum deflection region is written, a unit inputting a first dose of a shot of each charged particle beam irradiating the each minimum deflection region, and modulating the first dose by using the representative temperature of the each minimum deflection region, and a unit including the deflectors of a plurality of levels and writing a pattern in the each minimum deflection region with a second dose, which has been modulated, by using the deflectors of a plurality of levels. | 03-22-2012 |
20120104286 | METHOD FOR RESIZING PATTERN TO BE WRITTEN BY LITHOGRAPHY TECHNIQUE, AND CHARGED PARTICLE BEAM WRITING METHOD - A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing. | 05-03-2012 |
20120193553 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - A charged-particle beam writing apparatus used for writing a predetermined pattern on a sample placed on a stage with a charged-particle beam. The apparatus comprises a height measuring unit that measures a height of the sample by irradiating the sample with light and receiving light reflected from the sample, and a control unit that receives either of height data acquired from a height data map prepared based on values measured by the height measuring unit before writing and height data measured by the height measuring unit during writing, thereby adjust an irradiation position of the charged-particle beam on the sample. | 08-02-2012 |
20120211676 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes an unit to measure height positions of a substrate, an unit to input a position dependent height distribution obtained by converting each position error of a pattern generated depending on each corresponding writing position of the substrate into a value in a height direction, and to add the position dependent height distribution to a height distribution obtained based on the height positions in order to correct the height distribution of the substrate, an unit to calculate a deflection shift amount of a pattern to be written by using a corrected height distribution, an unit to calculate a deflection amount for deflecting a beam to a position where a calculated deflection shift amount has been corrected, and an unit to write a pattern on the substrate by deflecting the beam by a calculated deflection amount. | 08-23-2012 |
20120256106 | ELECTRON BEAM EXPOSURE APPARATUS AND ELECTRON BEAM EXPOSURE METHOD - In a multi-column electron beam exposure apparatus for performing exposure treatment in parallel by arranging a plurality of column cells on a wafer, a relationship between exposure intensity and a line width for each column cell is obtained (Steps S | 10-11-2012 |
20120292535 | EXPOSURE SYSTEMS FOR INTEGRATED CIRCUIT FABRICATION - Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator. | 11-22-2012 |
20120292536 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a unit to divide a chip region into first data processing blocks, a unit to, in each block, extract a cell whose reference position is located in the block concerned from cells each including at least one figure pattern, a unit to, for each block, generate a first frame that surrounds the block concerned and the cell extracted, a unit to, for each first frame, divide the inside of the first frame concerned into mesh regions and calculate an area density of a figure pattern in each mesh, a unit to combine area densities of mesh regions which are overlapped with each other and between different first frames, a unit to calculate a dose of beam by using the area density, and a unit to write a pattern on a target workpiece by irradiating the beam of the dose calculated. | 11-22-2012 |
20120292537 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD OF SAME - A charged particle beam writing apparatus, includes a unit to input information about a stripe region height, and to judge, when a write region is divided into stripe regions in a thin rectangular shape by the stripe region height, whether a height of a last stripe region is narrower than the stripe region height; and a unit to divide the write region into stripe regions in the thin rectangular shape in such a way that the last stripe region and a stripe region prior to the last stripe region are combined to create one stripe region and stripe regions at least two stripe regions prior to the last stripe region are each created as stripe regions of the stripe region height if the height of the last stripe region is narrower than the stripe region height. | 11-22-2012 |
20130001442 | RADIATION SOURCE AND LITHOGRAPHIC APPARATUS - A radiation source includes a fuel supply configured to deliver fuel to a plasma emission location for vaporization by a laser beam to form a plasma, and a collector configured to collect EUV radiation emitted by the plasma and direct the EUV radiation towards an intermediate focus. The collector includes a diffraction grating configured to diffract infrared radiation emitted by the plasma. The radiation source includes a radiation conduit located in between the collector and the intermediate focus. The radiation conduit includes an entrance aperture connected by an inwardly tapering body to an exit aperture. The radiation conduit includes an inner portion and an outer portion, the inner portion being closer to the intermediate focus than the outer portion. The inner portion is configured to reflect incident diffracted infrared radiation towards the outer portion. | 01-03-2013 |
20130037730 | Network architecture for lithography machine cluster - The invention relates to a clustered substrate processing system comprising a plurality of lithography elements. Each lithography element is arranged for independent exposure of substrates according to pattern data, and comprises a plurality of lithography subsystems, a control network arranged for communication of control information between the lithography subsystems and at least one element control unit, the element control unit arranged to transmit commands to the lithography subsystems and the lithography subsystems arranged to transmit responses to the element control unit, and a data network arranged for communication of data logging information from the lithography subsystems to at least one data network hub, the lithography subsystems arranged to transmit data logging information to the data network hub and the data hub arranged for receiving and storing the data logging information. The system further comprises a cluster front-end for interface to an operator or host system. | 02-14-2013 |
20130043414 | SYSTEM FOR MAGNETIC SHIELDING - The invention relates to a system for magnetically shielding a charged particle lithography apparatus. The system comprises a first chamber, a second chamber and a set of two coils. The first chamber has walls comprising a magnetic shielding material, and, at least partially, encloses the charged particle lithography apparatus. The second chamber also has walls comprising a magnetic shielding material, and encloses the first chamber. The set of two coils is disposed in the second chamber on opposing sides of the first chamber. The two coils have a common axis. | 02-21-2013 |
20130082195 | METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY - An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed. | 04-04-2013 |
20130134329 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus according to an embodiment, includes a dose coefficient calculation unit to calculate an n-th dose correction coefficient in iterative calculation of a charged particle beam to be shot in a small region concerned by the iterative calculation, for each small region of small regions made by virtually dividing into mesh-like regions, a change rate calculation unit to calculate, for each small region, a rate of change from an (n-1)th dose correction coefficient to the n-th dose correction coefficient calculated in the iterative calculation, as an n-th change rate, a correction calculation unit to correct, for each small region, the n-th dose correction coefficient by using the n-th change rate, and a dose calculation unit to calculate, for each small region, a dose of a charged particle beam to be shot in a small region concerned by using the n-th dose correction coefficient corrected. | 05-30-2013 |
20130193354 | DRAWING METHOD AND DRAWING DEVICE - Stored energy is evaluated for each of segmented regions, and using the evaluated stored energy, an optimal irradiation amount for an electron beam is evaluated by a conjugate gradient method. The evaluated stored energy is used instead of calculating a determinant (Apk) in the procedure that includes calculation of the determinant (Apk) from among repeated calculation procedures that follow the conjugate gradient method and seek to answer a simultaneous linear equation (Ax=b) with a matrix (A) as a coefficient. Thus it is possible to evaluate the optimal irradiation amount for an electron beam with a high processing speed and a high degree of accuracy, and without expressly requiring the calculation of Apk, by managing the giant matrix (A) comprising numerous factors according to reduction of lines of circuitry in a circuit pattern. | 08-01-2013 |
20130264499 | ACQUISITION METHOD OF CHARGED PARTICLE BEAM DEFLECTION SHAPE ERROR AND CHARGED PARTICLE BEAM WRITING METHOD - An acquisition method of a charged particle beam deflection shape error includes writing a plurality of figure patterns, each smaller than a deflection region of a plurality of deflection regions, with charged particle beams, at a pitch different from an arrangement pitch of the plurality of deflection regions to be deflected by a deflector that deflects the charged particle beams, synthesizing writing positions of the plurality of figure patterns into one virtual deflection region of the same size as the deflection region, based on a positional relationship between the deflection region including a position where a figure pattern concerned of the plurality of figure patterns has been written and the position where the figure pattern concerned has been written, and calculating, to output, a shape error in the case of writing a pattern in the deflection region, using a synthesized writing position of each of the plurality of figure patterns. | 10-10-2013 |
20130320243 | EFFICIENT SCAN FOR E-BEAM LITHOGRAPHY - The present disclosure provides a method of increasing the wafer throughput by an electron beam lithography system. The method includes scanning a wafer using the maximum scan slit width (MSSW) of the electron beam writer. By constraining the integrated circuit (IC) field size to allow the MSSW to cover a complete field, the MSSW is applied to decrease the scan lanes of a wafer and thereby increase the throughput. When scanning the wafer with the MSSW, the next scan lane data can be rearranged and loaded into a memory buffer. Thus, once one scan lane is finished, the next scan lane data in the memory buffer is read for scanning. | 12-05-2013 |
20130327962 | Electron Beam Lithography System and Method For Improving Throughput - An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer. | 12-12-2013 |
20140097362 | System and Method for Compressed Data Transmission in a Maskless Lithography System - Compression, transmission and decompression of gray-tone imagery data includes receiving a gray-tone image suitable for printing at least a portion of a pattern onto a substrate by operation of an electron beam lithography system, aggregating sets of lines of the gray-tone image into trilines, sequentially encoding each of the trilines of the gray-tone image by operation of one or more encoders, the one or more encoders equipped with a codebook configured to store a plurality of triline fragments and a write location and transmitting the encoded trilines of the gray-tone image to a set of decoders of the digital pattern generator via a set of data pathways established between the one or more encoders and each of the decoders. | 04-10-2014 |
20140158916 | METHOD AND SYSTEM FOR FORMING A PATTERN ON A RETICLE USING CHARGED PARTICLE BEAM LITHOGRAPHY - A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed. | 06-12-2014 |
20140209818 | LITHOGRAPHY APPARATUS, LITHOGRAPHY METHOD, AND METHOD OF MANUFACTURING ARTICLE - A lithography apparatus measures a position of each sample shot, and obtains a measurement error with respect to each second shot region of the sample shot regions based on a position of each second shot region obtained by first regression calculation based on a measurement value of a position of each first shot region of the sample shot regions, and a measurement value of a position of each second shot region. After forming the pattern in at least one shot region, the apparatus measures a position of each of shot regions of the second shot regions in a partial area, and obtains positions of shot regions in the partial area by second regression calculation based on measurement values of the positions of shot regions in the partial area and the obtained measurement error. | 07-31-2014 |
20140264086 | CHARGED PARTICLE LITHOGRAPHY SYSTEM - A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array. | 09-18-2014 |
20140299790 | INSPECTION METHOD AND AN INSPECTION SYSTEM EXHIBITING SPECKLE REDUCTION CHARACTERISTICS - A method and an inspection system that exhibiting speckle reduction characteristics includes a light source arranged to generate input light pulses, and diffuser-free speckle reduction optics that include a beam splitter, for splitting an input light pulse from the light source into multiple light pulses that are oriented at angles in relation to each other when exiting the beam splitter, and at least one optical element for directing the multiple light pulses to impinge on an inspected object at different angles. | 10-09-2014 |
20140319384 | CHARGED PARTICLE BEAM DRAWING APPARATUS, FORMAT CHECK APPARATUS AND FORMAT CHECK METHOD - A charged particle beam drawing apparatus in an embodiment includes an information generation part to generate encoded information on drawing data having a layered structure and check information on the format check, if the drawing data passes the check by the format check part; an information storage part to store the encoded information and the check information; a code inspection part to inspect the drawing data by using the encoded information in the information storage part, when the drawing data is to be rechecked in the format check based on the check details; an information inspection part to inspect the check information in the information storage part while omitting the format check, if the drawing data passes the inspection by the code inspection part; and a check execution part to execute check with processing details of the format check changed according to the inspection result. | 10-30-2014 |
20140353527 | Using Wafer Geometry to Improve Scanner Correction Effectiveness for Overlay Control - Systems and methods for providing improved scanner corrections are disclosed. Scanner corrections provided in accordance with the present disclosure may be referred to as wafer geometry aware scanner corrections. More specifically, wafer geometry and/or wafer shape signature information are utilized to improve scanner corrections. By removing the wafer geometry as one of the error sources that may affect the overlay accuracy, better scanner corrections can be obtained because one less contributing factor needs to be modeled. | 12-04-2014 |
20150008343 | Electron Beam Data Storage System and Method for High Volume Manufacturing - The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table. | 01-08-2015 |
20150041684 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes an area density calculation unit to calculate a pattern area density weighted using a dose modulation value, which has previously been input from an outside and in which an amount of correction of a dimension variation due to a proximity effect has been included, a fogging correction dose coefficient calculation unit to calculate a fogging correction dose coefficient for correcting a dimension variation due to a fogging effect by using the pattern area density weighted using the dose modulation value having been input from the outside, a dose calculation unit to calculates a dose of a charged particle beam by using the fogging correction dose coefficient and the dose modulation value, and a writing unit to write a pattern on a target object with the charged particle beam of the dose. | 02-12-2015 |
20150060704 | WRITING DATA CORRECTING METHOD, WRITING METHOD, AND MANUFACTURING METHOD OF MASK OR TEMPLATE FOR LITHOGRAPHY - According to one embodiment, a writing data correction method includes preparing a data table having a combination of a pattern resizing amount, a beam irradiation amount, and a back-scattering coefficient for each pattern size; converting, into writing data, a layout obtained by dividing a design layout into a plurality of regions in accordance with each pattern size, resizing patterns of the design layout writing based on the pattern resizing amounts corresponding to the pattern sizes contained in the respective regions, and executing a proximity effect correction for the resized patterns contained in the respective regions based on the beam irradiation amounts and the back-scattering coefficients corresponding to the pattern sizes of the design layout contained in the respective regions, and on the beam irradiation amounts and the back-scattering coefficients corresponding to the pattern sizes of the design layout contained in the regions adjacent to the respective regions. | 03-05-2015 |
20150137009 | MULTI-ELECTRODE COOLING ARRANGEMENT - The invention relates to a collimator electrode, comprising an electrode body ( | 05-21-2015 |
20150144807 | DRAWING DATA CREATING METHOD, DRAWING APPARATUS, DRAWING METHOD, AND ARTICLE MANUFACTURING METHOD - The present invention relates to a method for drawing data that indicates a timing at which a substrate is irradiated with a beam. The method includes determining whether or not a mark to be irradiated with the beam exists in a predetermined region on a substrate. The method further includes creating, in a case where the mark exists in the predetermined region, the drawing data such that a mark region including the mark is irradiated with the beam at a predetermined timing after a region other than the mark region is irradiated with the beam. | 05-28-2015 |
20150294836 | SHOT DATA GENERATION METHOD AND MULTI CHARGED PARTICLE BEAM WRITING METHOD - A shot data generation method includes inputting writing data for writing a pattern on a target object with multi charged particle beams, and generating shot data for each beam of the multi charged particle beams by converting the writing data and using one of a first code indicating a first irradiation time period having been set beforehand, a second code indicating an irradiation time period being zero, and a third code indicating neither the first irradiation time period nor the irradiation time period being zero. | 10-15-2015 |
20150303025 | LITHOGRAPHY APPARATUS, AND METHOD OF MANUFACTURING AN ARTICLE - The present invention provides a lithography apparatus that performs patterning on a substrate with a beam, the apparatus comprising a blanker configured to perform blanking of the beam, and a controller configured to control the blanker, wherein the controller is configured to sequentially perform quantization accompanied by diffusion of an error to generate a command value for the blanking with respect to each of a plurality of pixels on the substrate, and the error is an error between a target value of dose and a predicted value of dose at a target pixel of the plurality of pixels. | 10-22-2015 |
20150311036 | CHARGED PARTICLE BEAM DRAWING APPARATUS - A charged particle beam drawing apparatus according to an embodiment includes; a vacuum vessel including a base plate; a stage provided in the vacuum vessel. and supporting a sample; a stage movement mechanism provided in the vacuum vessel and moving the stage; a two-dimensional scale provided on a lower surface of the stage; a detection unit disposed under the two-dimensional scale and detecting a position of the stage by using the two-dimensional scale; and a support body supporting the detection unit. | 10-29-2015 |
20150364298 | LITHOGRAPHY APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - There is provided a lithography apparatus advantageous in a process on a substrate, on which patterning has been performed thereby, that an external apparatus performs (in a succeeding step). The apparatus includes a controller and a transmitter. The controller extracts log information to be transmitted to the external apparatus that performs a process on the substrate, on which the patterning has been performed, among log information associated with the patterning. The transmitter transmits the extracted log information to the external apparatus. | 12-17-2015 |
20150371821 | Method of Fabricating an Integrated Circuit with a Pattern Density-Outlier-Treatment for Optimized Pattern Density Uniformity - The present disclosure provides one embodiment of an IC method. First pattern densities (PDs) of a plurality of templates of an IC design layout are received. Then a high PD outlier template and a low PD outlier template from the plurality of templates are identified. The high PD outlier template is split into multiple subsets of template and each subset of template carries a portion of PD of the high PD outlier template. A PD uniformity (PDU) optimization is performed to the low PD outlier template and multiple individual exposure processes are applied by using respective subset of templates. | 12-24-2015 |
20150380213 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND CHARGED PARTICLE BEAM DRAWING METHOD - A charged particle beam drawing apparatus has a drawing unit that directs a charged particle beam and draws a pattern on a target and also has a control calculator that controls the drawing unit. The control calculator has a speed calculating unit configured to calculate a first drawing speed in a first area in a drawing area on the target according to a run-up start coordinate, a drawing start coordinate, and a predetermined first acceleration, and calculate the range of the first area according to the run-up start coordinate, the first acceleration, and a second drawing speed, and also has a drawing control unit configured to control the drawing unit so that, in the first area, drawing is performed at the first drawing speed and, in a second area that follows the first area, drawing is performed at the second drawing speed. | 12-31-2015 |
20160005569 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a storage unit to store writing data of a region to be written in a target object, a first dividing unit to read the writing data and divide the region to be written into at least one first data processing region that overlaps with at least a first region where a pattern has been arranged, and at least one second data processing region that overlaps with a second region where no pattern is arranged without overlapping with the first region, a data processing unit to perform data processing of predetermined data processing contents for at least one first data processing region without performing the data processing for at least one second data processing region, and a writing unit to write a pattern on the target object, based on processed data. | 01-07-2016 |
20160013019 | Compensation of Imaging Deviations in a Particle-Beam Writer Using a Convolution Kernel | 01-14-2016 |
20160110491 | WRITING DATA VERIFICATION METHOD AND MULTI-CHARGED PARTICLE BEAM WRITING APPARATUS - In one embodiment, a writing data verification method is for verifying a conversion error due to data conversion from first writing data in a vector format based on design data to second writing data in a pixel format. The method includes converting the second writing data to third writing data in a vector format, performing an exclusive OR operation on the first writing data and the third writing data, enlarging a graphic of the first writing data to obtain an enlarged graphic and generating a tolerance region graphic from a difference between the enlarged graphic and the graphic of the first writing data, and detecting a defect by performing a mask process on a graphic generated by the exclusive OR operation with the tolerance region graphic. | 04-21-2016 |
20160126061 | DRAWING APPARATUS AND DEVICE MANUFACTURING METHOD - In at least one embodiment, a control unit of a drawing apparatus determines a distance by which the drawing apparatus causes a stage to move in a direction parallel to an arranging direction of a plurality of shot regions, in such a manner that a plurality of shot regions includes a shot region including a drawing region in which drawing processing by at least one first charged particle beam is able to be performed and also drawing processing by at least one second charged particle beam is able to be performed. The control unit controls a drawing operation of a first charged particle optical system and a drawing operation of a second charged particle optical system to use either the at least one first charged particle beam or the at least one second charged particle beam to perform drawing processing in the shot region including the drawing region. | 05-05-2016 |
20160133438 | CHARGED PARTICLE BEAM EXPOSURE APPARATUS SUITABLE FOR DRAWING ON LINE PATTERNS, AND EXPOSURE METHOD USING THE SAME - There is provided a charged particle beam exposure apparatus which turns an array beam including a plurality of charged particle beams, being arranged side by side in a line in a direction intersecting line patterns, on and off at predetermined blanking timing, and thus performs irradiation when irradiated positions of the charged particle beams arrive at pattern positions. The charged particle beam exposure apparatus improves data processing control by segmenting a sample provided with line patterns into a plurality of exposure ranges each at a predetermined length in a direction of movement, and performing on-off control of the beams based on a point of time when the array beam passes on a reference position set in the exposure region. | 05-12-2016 |
20160148785 | CHARGED PARTICLE BEAM WRITING APPARATUS, AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus includes a correction term calculation processing circuitry to calculate a correction term which corrects an error of a proximity effect density of a figure pattern to be written, compared against the figure pattern at design stage, a proximity effect correction dose coefficient calculation processing circuitry to calculate a proximity effect correction dose coefficient for correcting a proximity effect, by using the correction term, a dose calculation processing circuitry to calculate a dose of a charged particle beam by using the proximity effect correction dose coefficient, and a writing mechanism to write the figure pattern on a target object by using the charged particle beam whose dose is the dose calculated. | 05-26-2016 |
20160155609 | METHOD FOR GENERATING WRITING DATA | 06-02-2016 |
20160203949 | CHARGED PARTICLE BEAM DRAWING APPARATUS | 07-14-2016 |
20160254121 | Alignment of Multi-Beam Patterning Tool | 09-01-2016 |