Entries |
Document | Title | Date |
20080197267 | Photo Detector Apparatus - The present invention relates to a photodetector having a structure capable of increasing the dynamic range and of improving the S/N ratio for light detection. The photodetector includes a pixel including a photodiode, an integrating circuit, a CDS circuit, a selecting circuit, and a switching circuit. Charges generated by the photodiode are accumulated in an integral capacitor unit in the integrating circuit, and a first voltage value V | 08-21-2008 |
20080197268 | Solid-state imaging device and imaging apparatus - There is provided a solid-state imaging device including: a plurality of aperture pixels configured to be used for capturing of an image; a plurality of first light-shielded pixels configured to be shielded from light for detection of an optical black level, a temperature dependence of a dark current in the first light-shielded pixels being larger than a temperature dependence of a dark current in the aperture pixels; and a plurality of second light-shielded pixels configured to be shielded from light for detection of an optical black level, a temperature dependence of a dark current in the second light-shielded pixels being smaller than a temperature dependence of a dark current in the aperture pixels. | 08-21-2008 |
20080197269 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including: an image section with units arranged into a matrix each having an electric charge generation means for generating signal charges corresponding to the amount of an incident electromagnetic wave, an electric charge accumulation means for accumulating signal charges generated at the electric charge generation means, a signal transfer means for transferring signal charges generated at the electric charge generation means to the electric charge accumulation means, a reset means for resetting the electric charge accumulation means, an amplification means for amplifying a signal corresponding to signal charges accumulated at the electric charge accumulation means, and a selection means for activating an outputting to a signal output line of the signal amplified by the amplification means; and a control section for, when resetting the electric charge accumulation means, effecting control so as to bring a potential of a control terminal of the transfer means to a negative potential at least immediately before a reset operation by said reset means and to bring the potential of the control terminal of the transfer means to a potential higher than the negative potential after the reset operation. | 08-21-2008 |
20080203276 | Low Height Imaging System And Associated Methods - In an embodiment, a low height imaging system has: one or more optical channels and a detector array, each of the optical channels (a) associated with at least one detector of the array, (b) having one or more optical components and a restrictive ray corrector, and (c) configured to direct steeper incident angle field rays onto the at least one detector. | 08-28-2008 |
20080203277 | Light Sensitive System and Method for Attenuating the Effect of Ambient Light - There is provided a light-sensitive system responsive to light supplied by the system and less responsive to other light. The system includes a light source operable to supply time-modulated illumination, and a light sensor having greater response to the time-modulated illumination than to light from sources not so modulated. The invention may be embodied as a camera sensitive to supplied light and relatively insensitive to ambient light, and is useful in providing images for automated image interpretation. A method for photographing an object is also provided. | 08-28-2008 |
20080203278 | Solid state imaging device and imaging apparatus - A solid state imaging device having an image area in which a plurality of light receiving pixels is arranged on a semiconductor substrate of a first conductive type is disclosed. The device includes: a plurality of photosensor parts formed by providing on the semiconductor substrate a light receiving area and a photoelectric conversion area both configuring the light receiving pixel; a first well region formed on the opposite side of the light receiving area, having a second conductive type opposite to the first conductive type, and forming an overflow barrier; a second well region of the second conductive type formed in an area except a place corresponding to the photosensor part on the opposite side of the photoelectric conversion area; and a first conductive region formed in an area corresponding to the photosensor part on the opposite side of the photoelectric conversion area. | 08-28-2008 |
20080210848 | COLUMN CURRENT SOURCE - A column current source for an image sensor includes an array of pixels arranged in rows and columns, a reference current source, a transistor connected as a source follower to the reference current source and forming one half of a current mirror, and a plurality of current sources each connected to a column of pixels and with each current source forming the other half of the current mirror, thereby mirroring the reference current source. The current sources are connected to a first common node. A resistor is connected between the first common node and a second common node. One or more resistors are connected in series between the second common node and the transistor drain, and two or more switches are selectively operable to short circuit the resistors allowing the current sources to provide more than two current levels, thereby optimizing the image sensor current consumption for mobile devices. | 09-04-2008 |
20080217513 | Imaging apparatus - An imaging apparatus includes a solid state imaging device having a light receiving characteristic in which an amount of light received reaches a maximum when an angle of incidence of parallel light, radiated at continuously changing angle, is not vertical (angle θ of incident light in the range of 3° to 15°) to a light receiving surface. This characteristic changes the amount of light received greatly when an aperture stop is opened, and enhances an opening/closing effect of the aperture stop. The solid state imaging device includes a core/clad light guide path structure, whose core serves as a light guide path. This light guide path includes a columnar portion located above a photodiode, and a lens portion on the columnar portion. | 09-11-2008 |
20080217514 | Pixel for CMOS Image Sensor Having a Select Shape for Low Pixel Crosstalk - A novel CMOS image unit pixel layout having a photodiode including an optically optimized square image sensing region. The square image sensing layout provides for reduced electrical and color crosstalk and improved modulation transfer function (MTF) between neighboring pixels of an array of pixels. | 09-11-2008 |
20080230681 | IMAGE CAPTURE DEVICE - An image capture device, which illuminates a subject and receives light reflected from the subject to capture an image of the subject, is provided to achieve a small-size configuration and easy assembly. A plurality of light-emitting elements are mounted in positions on the periphery of an image sensor, and a light-guiding member guides light from the plurality of light-emitting elements to the image capture range for illumination. And protrusions of the light-guiding member are pressed by the lower end of a hood which blocks light from outside the image capture range, and the hood upper end is pressed by a filter. Slits are provided in the hood lower end. Even in assembly where a visible light filter is installed on the hood and fixed to an outer case, the occurrence of gaps between the hood and the visible light filter can be prevented through the spring action of the slits. | 09-25-2008 |
20080237446 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD - A solid-state image pickup device and method are provided. The device can not only operate with a wide dynamic range but it also allows the user to switch the dynamic range corresponding to the photographic scene, and its operating method. Plural pixels, each of which has a photodiode, a transfer transistor, a floating diffusion region, an additional capacitance element, a capacitance coupling transistor, and a reset transistor, are integrated in an array on a semiconductor substrate. The capacitance of such floating diffusion region is less than that of such photodiode. A first signal S | 10-02-2008 |
20080237447 | ULTRA LOW VOLTAGE CMOS IMAGE SENSOR ARCHITECTURE - An optical sensor has at least one pixel that generates an output voltage that changes at a rate dependent on the light intensity incident on the pixel. The time for the pixel output voltage to change from a first predefined level to a second predefined level is measured, so as to produce an output indicative of the incident light intensity. | 10-02-2008 |
20080237448 | METHOD AND CIRCUIT FOR OBTAINING A SAMPLE IN AN IMAGE SENSOR - An image sensor and a method for acquiring images by sampling of the level of a voltage representative of the charge of a photodiode, in which a first sample is taken during a reset of the charge level of the photodiode; and a second sample is taken provided that the decrease slope of the voltage after the reset is lower than a threshold, said second sample replacing the first one. | 10-02-2008 |
20080237449 | Imaging device with reduced row readout time and method of operating the same - An imager in which a column line bias current control signal is pulsed at some time during and/or after the pulsing of the reset control and the transfer control signals to increase a bias current in a pixel column line during reset and transfer operations. The bias current is then decreased by removing the pulse before the sampling and storing of reset and image signals. Pulsing the bias control voltage signal and thus, the bias current, decreases the settling time of the column line, while maintaining the required low current during sampling and storage of the reset and image signals. | 10-02-2008 |
20080237450 | STRUCTURE FOR A CMOS IMAGING SENSOR - A design structure for a CMOS image sensor and active pixel cell design that provides an output signal representing an incident illumination light level that is adapted for time domain analysis. Thus, the noise sources associated with charge integration and the contribution of dark current to it, is avoided. The active pixel cell design implements only three FETs: a transfer device, a reset device and an output transistor device having one diffusion connected to a Row Select signal. In this mode of operation, use is made of the voltage decay at the photo diode to generate a pixel output at one diffusion of the output transistor device, which is a pulse with fixed amplitude independent of the incident illumination level. For use of an NFET output transistor device, the pulse width is an inverse function of the incident illumination level. For a PFET output transistor device, the output pulse has a time delay, from a reference signal, by an amount that is an inverse function of the incident illumination level. | 10-02-2008 |
20080237451 | Wide dynamic range image sensor - An exemplary image sensor comprises a photodetector proximate to a pixel site, and a light meter proximate to the pixel site configured to approximate an initial charge acquired by the photodetector at the end of a first integration period of a frame exposure period. A reset circuit resets the photodetector if the approximated initial charge acquired by the photodetector exceeds a threshold. A readout circuit detects a final charge acquired by the photodetector at the end of a second integration period of the frame exposure period. If the photodetector was reset, the readout circuit adjusts the final exposure to account for exposure prior to the photodetector having been reset. | 10-02-2008 |
20080245952 | Synchronous imaging using segmented illumination - In an actively illuminated imaging system, illumination of a segmented scene is synchronized with an image sensing period. A scene is segmented into a plurality of scene portions utilizing a segmented lens. In an aspect, a first scene portion is illuminated when an imager is actively collecting photogenerated charge from the first scene portion, and a second scene portion is illuminated when an imager is actively collecting photogenerated charge from the second scene portion. The sensitivity of an image sensor is maximized, while simultaneously minimizing the amount of light that must be supplied to illuminate a scene. An irradiance pattern is varied allowing a more uniform distribution of light. Bands of varying wavelength, polarization, and light intensity may be variously applied to illuminate individual scene segments, as needed to enhance an identification of an object in the scene. The present invention is particularly useful with high frame rate imaging systems. | 10-09-2008 |
20080245953 | MULTI-AXIS INTEGRATION SYSTEM AND METHOD - An image acquisition system and method employing multi-axis integration (MAI) may incorporate both optical axis integration (OAI) and time-delay integration (TDI) techniques. Disclosed MAI systems and methods may integrate image data in the z direction as the data are acquired, projecting the image data prior to deconvolution. Lateral translation of the image plane during the scan in the z direction may allow large areas to be imaged in a single scan sequence. | 10-09-2008 |
20080251693 | Resolution switch circuit for image sensor - A resolution switch circuit for an image sensor uses a control unit to control a plurality of image gathering units to generate and store image signals. A resolution control unit controls a plurality of shift registers through the resolution control signals so that the shift registers control the image gathering units to output image signals. The signal combining unit is used to combine the image signals output from the image gathering units to achieve resolution change. Since the resolution switch circuit for the image sensor according to invention does not require additional resolution switch wiring, the affect of noise can be avoided and cost of the circuits can be reduced. The transmission of the image signals in the form of charges prevents any signal distortion due to resistance of wiring during transmission. | 10-16-2008 |
20080251694 | Image pickup apparatus - An image pickup apparatus capable of capturing a composite image of a visible-light image and an infrared image of a subject is provided, whereby the configuration is simplified and made more convenient. A visible-light source ( | 10-16-2008 |
20080251695 | IMAGE SENSING APPARATUS AND IMAGE SENSING METHOD - An image sensing apparatus and an image sensing method of the invention are configured in such a manner that an image sensor having two or more different photoelectric conversion characteristics is used, a gain of image signals having the respective photoelectric conversion characteristics acquired by the image sensor is calculated based on the image signals having the respective photoelectric conversion characteristics, and gain control is performed with respect to each of the photoelectric conversion characteristics, using the calculated gain. This arrangement enables to control the imaging sensitivity without changing the dynamic range. | 10-16-2008 |
20080251696 | IMAGE SENSOR POWER DISTRIBUTION - An image sensor power distribution arrangement includes a sensing portion having a first contact at a first edge thereof and a second contact at a second edge thereof, and a control portion. A first power supply supplies power to the sensing portion via the first contact. A second power supply supplies power to the sensing portion via the second contact, and to the control portion. | 10-16-2008 |
20080251697 | IMAGE SENSOR AND METHOD OF FABRICATION - Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films. | 10-16-2008 |
20080258042 | IMAGE SENSOR CIRCUITS AND METHODS WITH MULTIPLE READOUT LINES PER COLUMN OF PIXEL CIRCUITS - An image sensor circuit of various embodiments includes a pixel array with a plurality of pixel circuits arranged in a plurality of rows and a plurality of columns. Each column of the pixel array includes a corresponding first set of pixel circuits connected to output analog pixel signals to a respective first column readout line, and a corresponding second set of pixel circuits connected to output analog pixel signals to a respective second column readout line. Two or more analog-to-digital conversion circuits may be provided for each column of pixel circuits in the pixel array, and two or more rows of pixel circuits in the pixel array may be activated to output analog pixel signals to corresponding column readout lines at a same time. | 10-23-2008 |
20080258043 | Optical element and optical equipment - The optical element includes a substrate and optical thin film formed in multiple layers on the surface of the pertinent substrate, wherein the optical thin film is provided with low refractive index layers composed of material with a lower refractive index than that of the substrate, and high refractive index layers of which at least 1 layer is composed of material whose primary component is oxide and which have a refractive index higher than that of the low refractive index layers, and wherein at least 1 layer of the optical thin film composed of low refractive index layers and high refractive index layers contains at least one of metal ions selected from among Cu, Fe, Au, Ag, Cr, Mn, Co, and Ni. | 10-23-2008 |
20080258044 | Detection of Optical Radiation - The central idea of the present invention is that a readout result of an optical detection unit which is based on accumulating photocharges can be improved when the charge carriers accumulated on a photodiode capacitance can be transferred to a readout capacitance before being read out by a readout unit, and when the state of the readout capacitance can be read out in a non-destructive manner by the readout unit, so that a noise portion in the readout signal can be corrected by reading out the readout capacitance during charge accumulation and again reading out the readout capacitance after the end of charge accumulation. Additionally, it becomes possible by the transfer to the readout capacitance to vary the sensitivity of the optical detection device within broad limits and to record a sequence of successive light pulses, without having to reset a photodiode before recording every single light pulse. | 10-23-2008 |
20080258045 | SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device, includes: a pixel array area including an unit pixel having a photoelectric conversion element and a transfer gate; a first supply voltage control means for supplying a first control voltage to a control electrode of the transfer gate; a second supply voltage control means for sequentially supplying one or plural second control voltages having a voltage value different from the first control voltage to the control electrode; a third supply voltage control means for supplying a third control voltage having the same voltage value as the second control voltages once or plural times prior to one or plural supplies of the second control voltages; a first driving means for reading signal charges from the transfer gate when the first control voltage is supplied; and a second driving means for reading signal charges from the transfer gate once and more when the second control voltage is sequentially applied. | 10-23-2008 |
20080265137 | Photonic crystal sensors with integrated fluid containment structure - Photonic crystal (PC) sensors, and sensor arrays and sensing systems incorporating PC sensors are described which have integrated fluid containment and/or fluid handling structures. Sensors and sensing systems of the present disclosure are capable of high throughput sensing of analytes in fluid samples, bulk refractive index detection, and label-free detection of a range of molecules, including biomolecules and therapeutic candidates. The present disclosure also provides a commercially attractive fabrication platform for making photonic crystal sensors and systems wherein an integrated fluid containment structure and a photonic crystal structure are fabricated in a single molding or imprinting processing step amendable to high throughput processing. | 10-30-2008 |
20080265138 | IMAGE PICK-UP ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT ARRAY - An image pick-up element comprises: an optical element substrate part in which the image pick-up element generates a signal charge by photo-electrically converting an incident light applied from one surface side of the optical element substrate part to read the signal charge from the other surface side of the optical element substrate part and picks up an image; and a CMOS circuit substrate part connected to the other surface side of the optical element substrate part so as to transfer the signal charge generated in the photoelectric conversion layer, wherein the optical element substrate part comprises a photoelectric conversion layer to generate the signal charge by photo-electrically converting the incident light. | 10-30-2008 |
20080265139 | COMBINATION READER - An imaging system for collecting images of signals associated with a sample tile comprising a stage supporting the sample tile, a ring illuminator system emitting a uniform excitation energy upon an entirety of the sample tile causing at least a first signal to be generated from the sample tile, and an image collecting device collecting a first image of the first signal. The image collecting device further collecting a second image of a second signal emitted from the sample tile, wherein the second signal being different than the first signal. | 10-30-2008 |
20080265140 | SEMICONDUCTOR PIXEL ARRAYS WITH REDUCED SENSITIVITY TO DEFECTS - A pixel structure is described, comprising at least two selection switches coupled in series to improve the yield of the pixel. Also an array comprising such pixel structures logically organized in rows and columns is described, as well as a method for selecting a row or column of pixel structures in such an array. | 10-30-2008 |
20080277566 | Image Forming State Detection Device - An image forming state detection device comprises a micro-lens array that is disposed at a position set apart from a predetermined focal plane of an image forming optical system by a specific distance and includes a plurality of micro-lenses arrayed with a predetermined pitch, a light-receiving portion array that includes a plurality of light-receiving portions each corresponding to one of the micro-lenses in the micro-lens array and receives an image on the predetermined focal plane via the individual micro-lenses, a signal string extracting means that extracts a pair of signal strings corresponding to images, formed with light fluxes having passed through different pupil areas of the image forming optical system, based upon light reception outputs obtained from the plurality of light-receiving portions, and an image forming state calculating means that calculates an image forming state at the image forming optical system by detecting an offset with regard to the phases of the pair of signal strings extracted by the signal string extracting means. | 11-13-2008 |
20080283726 | BACKSIDE ILLUMINATED IMAGING DEVICE, SEMICONDUCTOR SUBSTRATE, IMAGING APPARATUS AND METHOD FOR MANUFACTURING BACKSIDE ILLUMINATED IMAGING DEVICE - A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers. | 11-20-2008 |
20080283727 | Solid-state imaging device and imaging apparatus - There is provided a solid-state imaging device, including: a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and a laminated film formed on said semiconductor substrate; wherein said laminated film includes a hydrogen desorbing film for desorbing hydrogen, and a hydrogen blocking-off film disposed so as to overlie said hydrogen desorbing film. | 11-20-2008 |
20080283728 | Solid-state image pickup device and a method of manufacturing the same, and image pickup apparatus - Disclosed herein is a solid-state image pickup device, including: a first pixel for receiving a visible light of an incident light to subject the visible light to photoelectric conversion; a second pixel for receiving the visible light and a near-infrared light of the incident light to subject each of the visible light and the near-infrared light to the photoelectric conversion; a color filter layer; and an infrared light filter layer for absorbing or reflecting an infrared light, and transmitting the visible light. | 11-20-2008 |
20080283729 | Apparatus and Method for Processing Video Signal, Imaging Device and Computer Program - A video signal processing apparatus includes an image sensor and an infrared component remover. The image sensor receives light through a color filter, the color filter including long-pass filters only or a combination of a long-pass filter and an all-transmissive filter. The long-pass filters in the color filter a visible-light transmissive long-pass filter for permitting a visible-light component and an infrared-light component to pass therethrough and an infrared-light transmissive long-pass filter for permitting an infrared-light component to pass selectively therethrough. The infrared-light component remover removes an infrared-light component contained in a signal having passed through the visible-light transmissive long-pass filter, with transmittance data of an infrared-light region of the visible-light transmissive long-pass filter and the infrared-light transmissive long-pass filter applied. | 11-20-2008 |
20080283730 | CMOS IMAGE SENSOR USING GRADIENT INDEX CHIP SCALE LENSES - A camera module includes a gradient index lens on a spacer plate attached over an array of pixel sensors and associated micro lenses. The spacer plate and gradient index lens can be formed at the wafer level during the manufacture of multiple camera modules. A process for manufacturing the camera modules thus provides tolerances and yields provided by wafer processing techniques rather than mechanical assembly. | 11-20-2008 |
20080290253 | Image Sensor - An image sensor has a plurality of pixels, each pixel having a photodiode ( | 11-27-2008 |
20080290254 | IMAGING APPARATUS HAVING ELECTRON SOURCE ARRAY - An imaging apparatus includes an electron emission array having electron sources arranged in matrix form and having a plurality of horizontal scan lines, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more of the horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film to produce a video signal, wherein the control and drive circuit is configured to cause the electron sources included in unselected one or more horizontal scan lines not selected in the given video signal output period to emit electrons toward the photoelectric conversion film in a blanking period immediately preceding the given video signal output period. | 11-27-2008 |
20080290255 | True Color Image By Modified Microlens Array - An image sensor array includes a substrate having at least three image sensors located therein. The image sensor array also includes a blue filter positioned proximate to the first image sensor; a green filter proximate to the second image sensor; and a red filter proximate to the third image sensor. A first microlens is positionally arranged with the blue filter and the first image sensor; a second microlens is positionally arranged with the green filter and the second image sensor; and a third microlens is positionally arranged with the red filter and the third image sensor. The first microlens has a larger effective area than the second microlens, and the second microlens has a larger effective area than the third microlens. | 11-27-2008 |
20080296475 | Vertical image sensors and methods of fabricating the same - A vertical CMOS image sensor includes a plurality of photodiodes formed vertically in a substrate to a first depth. The vertical CMOS image sensor further includes a plurality of signal processing devices formed to correspond to the plurality of photodiodes. The plurality of signal processing devices are formed to transmit signals generated from the plurality of photodiodes. Each of the signal processing devices is substantially formed on the same plane with a corresponding one of the plurality of photodiodes. | 12-04-2008 |
20080308712 | IMAGE CAPTURING APPARATUS - An image capturing apparatus is provided that simultaneously captures a visible light image and an infra-red light image in which the same subject is in focus. The image capturing apparatus includes a light receiving section that receives light from a subject; a partial wavelength spectrum diaphragm section that is disposed between the subject and the light receiving section and that includes a light passing section that allows light in a first wavelength spectrum and light in a second wavelength spectrum to pass through and a filter section, which is disposed on a periphery of the light passing section, that allows the light in the first wavelength spectrum to pass through but does not allow the light in the second wavelength spectrum to pass through; and an image generating section that generates a first image based on the light in the first wavelength spectrum received by the light receiving section via the light passing section and the filter section and generates a second image based on the light in the second wavelength spectrum received by the light receiving section via the light passing section. | 12-18-2008 |
20080315071 | IMAGE READING APPARATUS AND CONTROLLING METHOD THEREOF - An image reading apparatus includes light sources, an image sensor, a data generating unit, and a carrier unit. The light sources are sequentially turned on for an identical period once in a single line period. The image sensor reads information from a print medium irradiated by the light sources. The data generating unit generates pixel data corresponding to the information. The carrier unit carries the print medium such that the image print medium is scanned by the image sensor in a sub-scanning direction. The single line period is equal to or more than twice a period from when first one of the light sources is turned on until last one of the light sources is turned off. | 12-25-2008 |
20080315072 | APPARATUS AND METHOD FOR PRODUCING A REPRESENTATION OF AN OBJECT SCENE - An apparatus ( | 12-25-2008 |
20080315073 | Method and apparatus for setting black level in an imager using both optically black and tied pixels - An imaging pixel array includes an active area of pixels, organized into rows and columns of pixels. The array also includes a plurality of dark pixel columns adjacent to the active area of pixels such that rows of pixels in the active area of pixels extend across the plurality of dark pixel columns. The plurality of dark pixel columns are composed of tied pixels. The array also includes a plurality of dark pixel rows adjacent to the active area of pixels and the plurality of dark pixel columns such that columns of pixels in the active area of pixels extend across the plurality of dark pixel rows. The plurality of dark pixel rows are composed of both optically black pixels and tied pixels on the same row. | 12-25-2008 |
20090001254 | RADIATION IMAGE DETECTOR - A radiation image detector is provided. The radiation image detector is constituted by: a photoconductive layer that generates charges when electromagnetic waves are irradiated thereon; a common electrode to which a predetermined voltage is applied, provided on one side of the photoconductive layer; a plurality of divided electrodes that output signals corresponding to charges which are generated within the photoconductive layer, provided on the other side of the photoconductive layer; and protective layers that cover the edges of the divided electrodes, the edges being the side surfaces and portions of surfaces of the divided electrodes, which are continuous with the side surfaces, that face the photoconductive layer. The interfaces between the protective layers and the photoconductive layer are smooth surfaces across the entireties thereof. | 01-01-2009 |
20090001255 | IMAGER PIXEL WITH CAPACITANCE CIRCUIT FOR BOOSTING RESET VOLTAGE - A pixel cell in which a capacitance is coupled between a storage node and a row select transistor and another capacitance is coupled between a storage node and a voltage supply or ground source potential to boost a reset voltage. | 01-01-2009 |
20090008531 | Integrated electrooptic system - An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission. | 01-08-2009 |
20090008532 | Image Sensor and Camera Module - An image sensor able to capture an image with a suitable dynamic range even in a case where a bright/dark difference within an imaging range is large is provided. An image sensor | 01-08-2009 |
20090008533 | RADIATION IMAGING APPARATUS AND RADIATION IMAGING SYSTEM - A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line. | 01-08-2009 |
20090014627 | Photodetector device - The present invention relates to a photo-detecting apparatus capable of obtaining the intensity distribution of incident light at the same timing even when the intensity distribution of incident light may change with time. The photo-detecting apparatus comprises a photo-detecting section in which plural pixels are arranged in a two-dimensional array, and a signal processing section. Each of plural pixels constituting the photo-detecting section has a first photodiode and a second photodiode, N first photodiodes included in the group of pixels constituting the m-th row of the two-dimensional array being electrically connected to each other through multiple lines, while M second photodiodes included in the group of pixels constituting the n-th column of the two-dimensional array being electrically connected to each other through other multiple lines. The signal processing section includes M first readout circuits and N second readout circuits, and the signal processing section transfers an electric charge generated in the first photodiodes connected to the multiple lines into the first readout circuits to output voltage values in accordance with the charge quantity in the respective first readout circuits, while transferring an electric charge generated in the second photodiodes connected to the other multiple lines into the second readout circuits to output voltage values in accordance with the charge quantity in the respective second readout circuits. | 01-15-2009 |
20090014628 | IMAGE CAPTURING APPARATUS - An apparatus including: a photodiode including: a first conductivity substrate; a second conductivity PD-well on the substrate's first surface side; and a first conductivity collection well inside the PD-well; a modulation transistor including: a second conductivity TR-well connected with the PD-well, and a junction depth shallower than that of the PD-well; a first conductivity modulation well inside the TR-well, and connected with the collection well; a second conductivity source inside the modulation well, and including a region contacting the first surface; a gate electrode in a region partially covering the modulation well and enclosing the source; a gate insulation layer between the gate and the first surface; and a second conductivity drain partially sandwiching the gate and opposing the source, and including a region contacting the first surface; and a transfer transistor connected to modulation transistors in pixels between the source and a connected source line. | 01-15-2009 |
20090014629 | IMAGING-CONTROL APPARATUS AND METHOD OF CONTROLLING SAME - For performing imaging with a high-frame rate, a control apparatus determines the time where at least one electrical charge of a sensor is read based on information about the position of an irradiation area of the sensor, the irradiation area being irradiated with a radiation, so that the time period where at least one electrical charge of a non-irradiation area of the sensor is read, the non-irradiation area being irradiated with no radiation, overlaps the time period where irradiation with the radiation is performed and the time period where at least one electrical charge of the irradiation area of the sensor is read does not overlap the radiation-irradiation-time period. | 01-15-2009 |
20090020686 | READING CIRCUIT, DISPLAY PANEL AND ELECTRONIC SYSTEM UTILIZING THE SAME - A reading circuit including a detection module, a first transistor, and a compensation module is disclosed. The detection module detects a light. The first transistor transforms the detection result for generating a current signal. The compensation module compensates a threshold voltage of the first transistor. | 01-22-2009 |
20090020687 | Reference Pixel Array with Varying Sensitivities for TOF Sensor - The sensitivity of a reference pixel array RPA to the reference modulated light MLR is varied for different reference pixels RP of the reference pixel array RPA. In one embodiment the different sensitivities of the reference pixels RP in the RPA is achieved by designing the pixels to have different light sensitivities with respect to each other. In another embodiment, the different sensitivities are achieved by changing optical coupling between the separate reference pixels RP of the reference pixel array RPA to the reference modulated light MLR such as by changing how the different reference pixels RP couple to the aperture LGA of the light guide LG. | 01-22-2009 |
20090032680 | RADIATION DETECTING APPARATUS AND RADIATION DETECTING SYSTEM - A radiation detecting apparatus includes plural pixels each provided with a switching element disposed on an insulating substrate and a conversion element disposed on the switching element, and plural signal wirings arranged in one direction and connected with the plural switching elements, wherein the conversion elements have electrodes separated respectively for the pixels, the switching element is connected with the electrode for each pixel, and both ends of the signal wiring, opposed to each other in a width direction, and both ends of the control wiring, opposed to each other in a width direction are disposed inside of an area of the electrode when seen from above the conversion element. | 02-05-2009 |
20090032681 | Detector and detecting method - A detector for detecting an image sensor is provided. The image sensor is electrically connected to a wafer via a contacting pad. The detector includes a parallel light source, a pin and a diffuser. The parallel light source radiates a parallel light. The pin is electrically connected to the contacting pad. The diffuser is disposed between the parallel light source and the pin. The parallel light from the parallel light source passes through the diffuser and then reaches the image sensor on the wafer. | 02-05-2009 |
20090032682 | Semiconductor Device, Module, and Electronic Device - The breakdown voltage between the potential of a terminal and the ground potential (or power supply potential) is improved by increasing the gate width of an MOS transistor included in a switch. Accordingly, another switch and the like are protected even when surge is applied to the terminal. By increasing the gate width of the MOS transistor included in the switch, the size of the other switch does not have to be increased. Therefore, variation in the potential at a node occurring when the other switch attains a non-conductive state from a conductive state can be suppressed. Therefore, a semiconductor device having the electrostatic breakdown voltage improved without influence on processing carried out based on an input potential from an external source, a module including a plurality of such semiconductor devices, and an electronic device including such a module can be provided. | 02-05-2009 |
20090032683 | Flexible bioelectronic photodetector and imaging arrays based on bacteriorhodopsin (BR) thin films - The direct deposit of photoelectric materials onto low-cost prefabricated patterned flexible electrodes provided by the present invention introduces a new design approach that permits the development of innovative lightweight, durable and non-planar sensing systems. By extending single and multi-spectral bioelectronic sensing technology to flexible plastic substrates, the invention offers a number of potential advantages over structurally rigid silicon-based microelectronics (e.g. CMOS) including a reduction in spatial requirements, weight, electrical power consumption, heat loss, system complexity, and fabrication cost. | 02-05-2009 |
20090039236 | ACTIVE PIXEL SENSOR - Disclosed herein is an active pixel sensor. A first transistor amplifies voltage generated in response to light at an integration node N. A second transistor is a selecting transistor, and performs a function of selecting a specific pixel from a pixel array. A third transistor resets voltage of the integration node N to voltage supplied from VDD during a reset period. A fourth transistor is a photogate, and performs a function of connecting a photogate capacitance to the integration node N, and thus increasing a dynamic range when the voltage of the integration node N is VDD−Vth (photogate: fourth transistor). A fifth transistor is a logarithmic transistor, and performs a function of generating a signal voltage in a logarithmic response to light when the voltage of the integration node N is logarithmic bias voltage−Vth (logarithmic transistor: fifth transistor); and a photodiode performs a function of converting photons into electron pairs in a depletion layer, and then causing signal charges to be accumulated when light is incident from outside. | 02-12-2009 |
20090045319 | Optical Sensor, Solid-State Imaging Device, and Operating Method of Solid-State Imaging Device - In an optical device such as an optical sensor or a solid-state imaging device having a photodiode for receiving light and producing photocharges and a transfer transistor (or an overflow gate) for transferring the photocharge, it is configured that photocharges overflowing from the photodiode in storage operation are stored into a plurality of storage capacitance elements through the transfer transistor or the overflow gate, thereby obtaining the optical device adapted to maintain a high sensitivity and a high S/N ratio and having a wide dynamic range. | 02-19-2009 |
20090045320 | Method, apparatus and system for a low power imager device - A method, apparatus and system providing an imaging device in which a bias current supplied to one or more imaging device circuits is adjusted in accordance with a frequency of a pixel clock signal. | 02-19-2009 |
20090045321 | Image sensor, method of manufacturing the same, and method of operating the same - An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 μm, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section. | 02-19-2009 |
20090045322 | Optimization of alignment between elements in an image sensor - An image sensor is formed with shifts among the optical parts of the sensor and the photosensitive parts of the sensor. The optical parts of the sensor may include a color filter array and/or microlenses. The photosensitive part may include any photoreceptors such as a CMOS image sensor. The shifts allow images to be formed even when the light received at a given pixel location varies in angle of incidence as a function of pixel location within the array. The relative shifts among the pixel components may be, for example, plus or minus some fraction of the pixel pitch. The shift may be variable across the array or may be constant across the array and may be deterministically determined. | 02-19-2009 |
20090045323 | Automatic Headlamp Control System - A vehicular imaging system includes a forward facing photosensor array and a control responsive to the photosensor array. The control processes an image data set indicative of captured images, and the control processes a reduced image data set of the image data set to determine whether an object of interest is within a target zone of the captured image. The reduced image data set is representative of a portion of the captured images as captured by a particular grouping of the photosensor elements. The control adjusts the reduced image data set so as to be representative of a portion of the captured images as captured by a different particular grouping of the photosensor elements, and adjusts the reduced image data set in response to a determination of a change in a focus of expansion of the captured images. | 02-19-2009 |
20090050787 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a photoelectric conversion area in which a plurality of photoelectric conversion elements are arranged to convert incident light into electric charges, a plurality of amplifying units are arranged to read and supply signals based on the electric charges of corresponding photoelectric conversion elements to output lines, a plurality of transfer units are arranged to transfer the electric charges of the corresponding photoelectric conversion elements to input units for corresponding amplifying units, and a plurality of voltage supply units are arranged to supply to corresponding input units voltages for setting the corresponding input units to have first and second potentials are disposed two-dimensionally, and a plurality of voltage supply control units are arranged to supply a voltage to corresponding voltage supply units of the plurality of voltage supply units. | 02-26-2009 |
20090057535 | CMOS image sensor and operating method thereof - A CMOS image sensor may be provided. The CMOS image sensor may include at least one floating diffusion column line, a plurality of pixels, and/or a charge/voltage conversion circuit. The plurality of pixels may be connected to the floating diffusion column line in parallel. The charge/voltage conversion circuit may be connected to one end of the floating diffusion column line, and may detect a potential variation of the floating diffusion column line using a coupling capacitor. | 03-05-2009 |
20090057536 | IMAGE SENSOR AND ELECTROMAGNETIC RADIATION IMAGING DEVICE - To provide a small-size image sensor and electromagnetic radiation imaging device which can obtain a good image without relying on the condition of an object, the image sensor including a plurality of pixel units arranged two-dimensionally, wherein each of the plurality of pixel units includes: a first photodiode and a second photodiode; a readout circuit which reads a signal generated by the first photodiode and a signal generated by the second photodiode, and outputs the read signals, the readout circuit being connected to the first photodiode and the second photodiode; and a difference circuit which outputs a difference signal corresponding to a difference between the signal read from the first photodiode and the signal read from the second photodiode, the difference circuit being connected to the readout circuit. | 03-05-2009 |
20090057537 | PIXEL WITH SPATIALLY VARYING SENSOR POSITIONS - An image sensor including a substrate, at least one metal layer, and a plurality of pixels arranged in array. Each pixel includes a sense element disposed in the substrate and at least one metal interconnect segment disposed in the at least one metal layer. The array includes a pair of perpendicular axes extending from an optical center, wherein for a line of pixels extending perpendicularly from one of the axes to a peripheral edge of the array a spacing between the sense elements of consecutive pairs of pixels of the line is at least equal to a spacing between the associated at least one metal interconnect segments, and wherein for at least one consecutive pair of pixels of the line the spacing between the sense elements is greater by an incremental amount than the spacing between the corresponding at least one metal interconnect segments. | 03-05-2009 |
20090057538 | Image reading device and image reading method - An image reading device which reads a document as an image includes a light source unit, a light receiving unit, a transporting mechanism which relatively transports either one of the light receiving unit or the document, a light reception control unit, and an irradiation control unit which irradiates the light receiving unit with the light from the document during a first light receiving period starting from a beginning point of the charging period and a second light receiving period ending at an ending point of the charging period and which does not irradiate the light receiving unit with the light from the document between the first light receiving period and the second light receiving period. | 03-05-2009 |
20090057539 | SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device ( | 03-05-2009 |
20090065679 | Imaging apparatus - An imaging apparatus for capturing a synthesized image of a visible-spectrum image and an infrared-spectrum image implements a proper synthesis balance without amplification of the signal of the infrared-spectrum image obtained by a solid-state image sensor or attenuating the visible light incident on the image sensor. A visible light source ( | 03-12-2009 |
20090065680 | Image detecting device - An image detecting device includes a substrate including plural accumulating portions, plural data lines, plural first protection lines, plural first diodes, and plural second diodes. The plural accumulating portions, due to the irradiation of incident electromagnetic waves expressing an image which is an object of detection, charges expressing the image are accumulated. In the plural data lines, the plural accumulating portions are respectively connected individually via switching elements. The plural first protection lines are for protecting a circuit from excess voltage. In the plural first diodes, anodes are connected to a portion of the plural first protection lines respectively, and cathodes are connected to the plural data lines respectively. In the plural of second diodes, cathodes are connected to another portion of the plural first protection lines respectively, and anodes are connected to the plural data lines respectively. | 03-12-2009 |
20090065681 | SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device ( | 03-12-2009 |
20090072120 | CIRCUITS AND METHODS ALLOWING FOR PIXEL ARRAY EXPOSURE PATTERN CONTROL - An image processing system includes an image sensor circuit. The image sensor circuit is configured to obtain an image using a type of shutter operation in which an exposure pattern of a pixel array is set according to exposure information that changes over time based at least partially on charge accumulated in at least a portion of the pixel array. An image sensor circuit includes a pixel array and one or more circuits. The one or more circuits are configured to update exposure information based at least partially on one or more signals output from the pixel array, and to control an exposure pattern of the pixel array based on the exposure information. A pixel circuit includes a first transistor connected between a photodiode and a sense node, and a second transistor connected between an exposure control signal line and a gate of the first transistor. | 03-19-2009 |
20090072121 | DEVICE FOR DETECTING AN ELECTROMAGNETIC RADIATION WITH CURRENT LIMITATION - This device for detecting an electromagnetic radiation, comprises a matrix of juxtaposed elementary sensors ( | 03-19-2009 |
20090072122 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor | 03-19-2009 |
20090072123 | Solid-state imaging device and drive control method for the same - A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range. | 03-19-2009 |
20090072124 | VEHICULAR IMAGE SENSING SYSTEM - An image sensing system for a vehicle includes an imaging sensor comprising a two-dimensional array of light sensing photosensor elements formed on a semiconductor substrate. The imaging sensor is disposed at an interior portion of the vehicle, and may be at or proximate to an interior rearview mirror assembly of the vehicle. The system includes a logic and control circuit comprising an image processor for processing image data derived from the imaging sensor. The image sensing system may identify objects of interest based on spectral differentiation or by comparing over successive frames image data associated with objects in the forward field of view of the image sensor or by objects of interest being at least one of qualified and disqualified based at least in part on object motion in the field of view of the imaging sensor. | 03-19-2009 |
20090072125 | Solid-state imaging apparatus and method for producing the same - A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate. | 03-19-2009 |
20090078854 | Optical Writing Device and Method of Manufacturing the Same - A plurality of photo emitters are arrayed on a transparent substrate in a first direction to form at least one photo emitter array. An electrode is provided on the substrate and electrically connected to the photo emitters in common. A dimension of the electrode in a second direction perpendicular to the first direction is smaller than a dimension of the substrate in the second direction. | 03-26-2009 |
20090078855 | Imaging sensor having microlenses of different radii of curvature - The present invention provides an image sensor which comprises improved microlenses to cope with different optical requirements for oblique incident light or different components of light. In one embodiment, the image sensor comprises at least two microlenses having different radii of curvature. In another embodiment, the image sensor comprises at least one asymmetrical microlens. | 03-26-2009 |
20090084937 | Solid state imaging device - A solid-state imaging device | 04-02-2009 |
20090084938 | Sensor panel and image detecting device - The present invention provides a sensor panel and an image detecting device that can suppress generation of artifacts and an increase in noise. A sensor panel has an image detecting region formed from plural image sensor portions, data lines reading signals out from the image sensor portions, bidirectional diodes disposed at a peripheral edge of the image detecting region and connected to the data lines, and, at an upper layer of the bidirectional diodes, a semiconductor film that generates charges due to irradiation of electromagnetic waves. At the sensor panel, shield electrodes, that are connected to a common line, are disposed between the bidirectional diodes and the semiconductor film. | 04-02-2009 |
20090084939 | IMAGE CAPTURE DEVICE AND RECORDING MEDIUM - A digital camera includes: an image capture data creation unit; a CPU for directing the image capture data creation unit to perform image captures several times and acquire a plurality of image capture data; and an image processing device that determines whether or not a common specific image region exists in a plurality of image capture data acquired by the CPU and, in the case where it is determined that a specific image region exists, performs a pixel additive synthesis for image data of the specific image region and creates image data. | 04-02-2009 |
20090084940 | SENSING LIGHT AND SENSING THE STATE OF A MEMORY CELL - A light-to-frequency converter includes a switch ( | 04-02-2009 |
20090084941 | COUNTER CIRCUIT, AD CONVERSION METHOD, AD CONVERTER, SEMICONDUCTOR DEVICE FOR DETECTING DISTRIBUTION OF PHYSICAL QUANTITIES, AND ELECTRONIC APPARATUS - A solid-state image pick up device including a pixel array unit having unit pixels arranged in a matrix pattern. Each unit pixel includes a photoelectric converter. Additionally, the solid-state image pick up device has column signal lines that correspond to the respective columns of the matrix pattern, a row scanning means for selectively controlling each unit pixel, and an analog-digital converting unit for converting analog signals output from the unit pixels in a row selectively controlled by the row scanning means. The analog-digital converting unit further includes an asynchronous counter which performs counting in two modes and the asynchronous counter includes a counter processor configured so that when switching between the count modes occurs, a running count value is broken and there is an interval between the count modes and when a mode begins the running count value is reset to the value before the running count value was broken. | 04-02-2009 |
20090090844 | BIASING APPARATUS, SYSTEMS, AND METHODS - Apparatus, methods, and systems for providing a uniform bias voltage in a biasing circuit to a plurality of pixels. The biasing circuit has a plurality of switches, including a first switch connected at a first end of a capacitor and a second end connected to a first ground. A second switch is connected at a first end to a bias voltage reference and at a second end to a gate of a biasing transistor and a second end of the capacitor. A third switch is connected at a first end to the first end of the capacitor and at a second end to the drain of the biasing transistor and a second ground. The first and the second switch are closed and the third switch is open to set a bias voltage on the capacitor. The first and second switch are open and the third switch is closed when the bias voltage is set on the capacitor. | 04-09-2009 |
20090090845 | Method and apparatus providing shared pixel architecture - Methods and apparatuses using pixels with shared readout circuits are used to increase pixel fill factor and operation efficiency. | 04-09-2009 |
20090090846 | Imaging system with low noise pixel array column buffer - An imaging system includes a row and column array of active pixels, each having an associated pitch. In response to respective control signals, each pixel outputs a reset level which includes noise components, or a signal level which includes signal and noise components. Multiple column buffers, each having a pitch equal to or less than that of a pixel, convey the outputs of respective pixel columns to a bus line. Each buffer comprises ‘odd’ and ‘even’ S&H/CDS circuits, which process the pixel outputs of odd and even rows, respectively. Each S&H/CDS circuit subtracts pixel reset level from signal level to produce an output in which correlated noise is suppressed. Each column buffer includes a buffer amplifier which conveys the output to the bus line. A gain amplifier separate from the column buffers is coupled to the bus line such that it amplifies the outputs of a multiple column buffers. | 04-09-2009 |
20090095882 | NEAR-FIELD NANO-IMAGER - An imaging device. In one embodiment, the imaging device includes a plurality of first electrode strips in parallel to each other along a first direction x, wherein each first electrode strip has an elongated body with a first surface and an opposite, second surface and a thickness n | 04-16-2009 |
20090095883 | Photodetection device and method - The photo-detecting device includes a photodetector for detecting incident light, an input J FET for reading the sensing signal from the photodetector, an amplifier for amplifying the signal detected by the input J FET, a feed-back circuit for feeding the output of the amplifier back to the gate of the input J FET through a feed-back capacitor, a reset circuit for resetting the feed-back capacitor by discharging it with a reset MOS FET, and a circuit of a switch and resistor. The same level voltage as the gate voltage of the input J FET is applied to its source through a resistor, and the circuit of the switch and the resistor is connected between the source of the reset MOS FET and the feed-back capacitor. The reset MOS FET and switch are controlled so that the reset MOS FET is turned “on” and “off” while the switch is “on”. | 04-16-2009 |
20090101798 | Circuit Providing Low-Noise Readout - Systems, methods, and apparatuses that may be employed to reduce noise in an electronic circuit are described. Systems are provided that include a circuit, wherein the circuit is configured to provide an active reset technique and an active column sensor readout technique. Methods for reducing circuit noise are also provided. The methods include providing a circuit configured to perform an active reset technique and an active column sensor readout technique. The methods further provide that the active reset technique and the active column sensor readout technique are both performed by the circuit. An imaging apparatus is provided that includes an array of photo-sensitive pixels, wherein each of the pixels can include a circuit configured to provide an active reset technique and an active column sensor readout technique. The active reset technique and the active column sensor readout technique are executable on the circuit. | 04-23-2009 |
20090101799 | IMAGE SENSOR, MULTI-CHIP MODULE TYPE IMAGE SENSOR AND CONTACT IMAGE SENSOR - The invention is to suppress a loss in image quality resulting from a sensitivity difference among different colors and to suppress an increase in a chip area. The invention provides for example an image sensor including three light detecting element rows respectively having R, G and B color filters on light detecting apertures, in which the light detecting element in the G light detecting element row has a light detecting area larger than that of the light detecting element in other B and R light detecting element rows and centers of gravity of light detecting parts of the light detecting elements in the respective light detecting element rows are arranged with a constant pitch (pitch Q) among the light detecting element rows and in which the G light detecting element row with a larger light detecting area in the light detecting element is not positioned as an end row among the R, G and B light detecting element rows but as a central light detecting element row. | 04-23-2009 |
20090108176 | Global shutter pixel circuit with transistor sharing for CMOS image sensors - A pixel circuit having a global shutter and transistor circuit sharing for CMOS image sensors. In one embodiment, a shared circuit includes a reset transistor, an amplifier transistor, and a readout transistor. At least two photodiode signal generation circuits share the shared circuit, wherein each signal generation circuit includes a capture transistor, a hold transistor, and a transfer transistor. Each pixel generation circuit may also include a photodiode reset transistor. In an alternate embodiment, each signal generation circuit does not include a separate transfer transistor, instead, the transfer transistor is part of the shared circuit. | 04-30-2009 |
20090127434 | IMAGE SENSOR WITH EXPANDING DYNAMIC RANGE - A conventional image sensor has a narrow dynamic range, so that the conventional image sensor has the limitation of not representing very dark portions or very bright portions depending on the exposure time when representing an image having such dark and bright portions. The present invention provides an image sensor including at least two storage units for respectively storing at least two image signals; a first switch unit for performing switching applied image signals to be respectively stored in the at least two storage units; and a second switch unit respectively connected to the at least two storage units and for equalizing the image signals stored in the at least two storage units. | 05-21-2009 |
20090127435 | CONVERSION APPARATUS, RADIATION DETECTING APPARATUS, AND RADIATION DETECTING SYSTEM - A conversion apparatus of the present invention includes a plurality of pixels including switching elements and conversion elements. The pixels are arranged in a pixel region including a switching element region in which switching elements are arranged in row and column directions and a conversion element region in which conversion elements are arranged in row and column directions. A plurality of wirings are including a second metal layer are connected to the plurality of switching elements of the column direction. Plural bias wirings of a fourth metal layer are connected to plural conversion elements. An external signal wiring of the fourth metal layer outside the pixel region is connected to the signal wirings. An external bias wiring of a first metal layer outside the pixel region is connected to the plurality of bias wirings. The external signal wiring and the external bias wiring intersect each other. | 05-21-2009 |
20090127436 | METHOD AND APPARATUS FOR CONTROLLING ANTI-BLOOMING TIMING TO REDUCE EFFECTS OF DARK CURRENT - An electronic imager includes a plurality of pixels having photosensors for accumulating charge corresponding to individual pixel values of a sensed image. Each of the pixels includes an anti-blooming function which allows charge in excess of a predetermined amount to be drained from the photosensor thus reducing the charge from the pixel that migrates to adjacent pixels. The imager also includes circuitry which controls the anti-blooming function in response to image intensity to reduce dark current in the imager caused by the anti-blooming function. | 05-21-2009 |
20090127437 | METHOD AND APPARATUS FOR REDUCING DARK CURRENT AND HOT PIXELS IN CMOS IMAGE SENSORS - Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel. | 05-21-2009 |
20090127438 | IMAGE SENSOR WITH MULTIPLE INTEGRATION PERIODS - A method of reading voltages from an image sensor having an array of pixels, each pixel having at least one photodiode connectable to a storage node, the method having: controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode above a first threshold to the storage node at the start and end of a first integration period and reading a first voltage at the storage node of each pixel in the row at the end of the first integration period; controlling of the pixels in the row to transfer charge accumulated in the photodiode above a second threshold to the storage node at the start and end of a second integration period longer than the first integration period, and reading a second voltage value at the storage node of each pixel in the row at the end of the second integration period; controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode to the storage node at the end of a third integration period longer than the first and second integration periods; comparing for each pixel in the row, the first voltage values with a reference voltage; and based on the comparison, for each pixel in the row, performing one of: determining a pixel output value based on the first and/or second voltage values; and reading a third voltage value at the end of the third integration period, and determining a pixel output value based on the second and/or third voltage values. | 05-21-2009 |
20090134313 | 4T CMOS IMAGE SENSOR WITH FLOATING DIFFUSION GATE CAPACITOR - Pixel cells are provided which employ a gate capacitor associated with the floating diffusion node to selectively increase the storage capacity of the floating diffusion node. The gate capacitor can be formed at the same time as the same process steps used to form other gates of the pixel cells. The inherent capacity of the storage node alone may be sufficient under low light conditions. Higher light conditions may result in selective activation of the gate capacitor, thus increasing the capacity of the storage node with the additional capacity provided by the gate capacitor. The invention produces high dynamic range and high output signal without charge sharing or lag output signal. Methods of forming such pixel cells can be applied in CMOS and CCD imaging devices, image pixel arrays in CMOS and CCD imaging devices, and CMOS and CCD imager systems. | 05-28-2009 |
20090140124 | IMAGING DEVICE CAMERA SYSTEM AND DRIVING METHOD OF THE SAME - An imaging device includes: a pixel array part in which a plurality of pixels with different characteristics of spectral sensitivity are arranged in an array and which converts light transmitted through the pixel into an electric signal, wherein in the pixel array part, among a first color filter pixel, a second color filter pixel, and a third color filter pixel, each including a color filter, at least a plurality of the first color filter pixels and the second color filter pixels is arranged in an oblique pixel array system, and a clear pixel having a high transmittance is arranged in an oblique pixel array system at a given position of a given row and a given column in the oblique pixel array with respect to the first color filter pixel, the second color filter pixel, and the third color filter pixel. | 06-04-2009 |
20090159781 | Producing Layered Structures With Layers That Transport Charge Carriers - Layered structures such as photosensing arrays include layers in which charge carriers can be transported. For example, a carrier-transporting substructure that includes a solution processing artifact can transport charge carriers that flow to or from it through charge-flow surface parts that are on electrically conductive regions of a circuitry substructure; the circuitry substructure can also have channel surface parts that are on semiconductive channel regions, with a set of the channel regions operating as acceptable switches in an application. Or a first substructure's surface can have carrier-active surface parts on electrode regions and line surface parts on line regions; a second substructure can include a transport layer on carrier-active surface parts and, over it, an electrically conductive layer; to prevent leakage, an open region can be defined in the electrically conductive layer over the line surface part and/or an electrically insulating layer portion can cover the line surface part. | 06-25-2009 |
20090159782 | SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device comprises a pixel array; a reference signal generation unit operable to generate a reference signal that changes monotonically for a predetermined period in a horizontal period; a comparator operable to compare the level of a pixel signal with the level of a reference signal; a counter operable to count input clock pulses; a memory operable to store the number of counts counted by the counter as a digital value; and a timing control unit operable to generate a clock that is to be input into the counter, and change frequency of the clock that is to be input into the counter based on external input data. | 06-25-2009 |
20090159783 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING THE APPARATUS - A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the fist block line and the second block line. | 06-25-2009 |
20090159784 | INTEGRATED CIRCUIT DEVICE AND IMAGING APPARATUS USING INTEGRATED CIRCUIT DEVICE - An integrated circuit device of the present invention includes a plurality of signal processing circuits classified into a plurality of groups, each signal processing circuit including an amplifier circuit for amplifying an input electric signal and a bias circuit having an input terminal connected electrically to a bias source and supplying a bias input terminal of the amplifier circuit with an operation bias for an amplifying operation of the amplifier circuit; and a plurality of connection wirings arranged each for each of the groups separately, such that the input terminals of the bias circuits of the signal processing circuits in one of the groups are commonly connected through the connection wirings. This provides an integrated circuit device suppressing the lowering of an image quality in consideration of enabling lower power consumption, a low noise characteristic, and high integration, and an imaging apparatus using the integrated circuit. | 06-25-2009 |
20090166512 | Organic Pixeled Flat Detector Having Increased Sensitivity - An organic pixel eel flat detector has increased sensitivity. This is obtained by a preamplification at the pixel level. | 07-02-2009 |
20090166513 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device in the present invention includes pixels, arranged in a matrix, each of which converts light into a signal voltage; column signal lines each of which is provided for corresponding one of columns, so that the signal voltage is provided to corresponding one of the column signal lines; and AD converting units each of which is provided for the corresponding one of the column signal lines, and configured to convert the signal voltage into a digital signal, wherein each of the AD converting units includes: a comparing unit generating an output signal indicating a greater voltage of the signal voltage and a reference voltage; and a counting unit counting a count value until logic of the output signal is inverted, and the solid-state imaging device further includes a suspending unit suspending power supply to the comparing units after the logic of the output signals is inverted. | 07-02-2009 |
20090166514 | Image Sensor - The uppermost metallic wiring layer in light-blocking layers constituted by multilevel metallic wiring that prevents light from impinging on areas other than the light-receiving area of a photodiode in each picture cell is used as a measurement electrode to be directly contacted with a specimen to measure electrical signals. Furthermore, in each picture cell including a circuit for reading out electrical signals collected through the measurement electrode, another circuit for reading out electrical signals generated by the photodiode is provided in an independent or shared form. This configuration enables the photodiode for optical measurements and the measurement electrode for electrical measurements to be provided in every picture cell. Thus, in a hybrid image sensor having an optical measurement function for obtaining optical information due to specimen and an electrical measurement functions for obtaining electrical information due to the specimen, the spatial resolution of both types of two-dimensional images can be simultaneously improved. | 07-02-2009 |
20090166515 | MULTI-POINT CORRELATED SAMPLING FOR IMAGE SENSORS - An improved passive pixel sensor (PPS) circuit comprising a correlated sampling circuit and method that integrates pixel charge leakage onto an integrating amplifier during sampling periods. An integrator circuit is provided for integrating PPS pixel charges received via a column line, and correlated sampling circuit is provided for the removal of kTC noise and dark integration. A multi-point sampling of the output of the integrator is provided wherein at least a first and second correlated sample are used to detect the charge integration from the column line leakages, and at least a third sample is used to detect the PPS signal after pixel readout. The correlated sampling method is employed to remove kTC noise and dark integration from the PPS signal. | 07-02-2009 |
20090184236 | SOLID STATE IMAGE PICKUP ELEMENT AND CAMERA SYSTEM - A solid state image pickup element includes a pixel unit having a plurality of pixels for photoelectric conversion disposed in a matrix shape and a pixel signal read circuit for reading pixel signals in the unit of a plurality of pixels from the pixel unit. The pixel signal read circuit includes a plurality of comparators disposed in correspondence with a pixel column layout for performing comparison judgment between a read signal potential and a reference voltage and outputting a judgment signal and a plurality of counters each for counting a comparison time of a corresponding one of the comparators, an operation being controlled by an output from a corresponding one of the comparators. The comparators include a first amplifier for performing a comparison operation between the reference voltage and the read signal potential and inverting an output at a predetermined comparison point, a second amplifier for forming a current path when an output of the first amplifier is inverted, to output an output of the first amplifier by gain up, and a current control circuit for shutting the current path of the second amplifier when an output level of the second amplifier exceeds a predetermined threshold level. | 07-23-2009 |
20090184237 | Photodetector - The present invention aims at providing a photodetector which can detect the incident light intensity with a high speed while having a wide dynamic range for incident light intensity detection. Each photodiode PD | 07-23-2009 |
20090189055 | Image sensor and fabrication method thereof - Embodiments disclose an image sensor device, comprising a substrate comprising a plurality of photosensor cells located therein or thereon, a plurality of optical guide structures corresponding to the photosensor cells respectively, and a stacked layer surrounding the optical guide structures, comprising a plurality of top portions with sharp corners adjacent to the top edges of the optical guide structures. | 07-30-2009 |
20090189056 | COLOR IMAGE SENSOR - The present invention is based on the principle of depth of penetration of electromagnetic rays. In the case of semiconductor mono-crystalline materials, such as silicon, the depth of penetration of a light ray is proportional to its wavelength. Using this phenomenon, the present invention consists of a pixel having three electrodes that can discriminate between the colors red, green, and blue, and thereby reconstruct a color image. | 07-30-2009 |
20090189057 | CMOS image sensor with current mirror - An image sensor includes a pixel with a drive transistor and a select transistor. The drive transistor is driven according to a voltage at a floating diffusion node. The select transistor is coupled in series with the drive transistor for being turned on when the pixel is selected. The image sensor also includes a current mirror unit having first and second branches conducting mirrored currents. The first branch is coupled to the drive transistor, and the second branch is coupled to the select transistor at an output node of the pixel. With such biasing by the current mirror, gain drop in the drive transistor is minimized. | 07-30-2009 |
20090189058 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer containing a compound having a partial structure represented by the following formula (I) and a fullerene or a fullerene derivative; and a transparent electrically conductive thin layer. | 07-30-2009 |
20090194671 | IMAGE SENSOR REFLECTOR - An array of pixels is formed using a substrate, where each pixel has a substrate having an incident side for receiving incident light, a photosensitive region formed in the substrate, and a reflector having a complex-shaped surface. The reflector is formed in a portion of the substrate that is opposed to the incident side such that light incident on the complex-shaped surface of the reflector is reflected towards the photosensitive region. | 08-06-2009 |
20090194672 | DIGITAL RADIOGRAPHIC IMAGING APPARATUS - A light sensing array has a plurality of electrically isolated photosensors, each photosensor having a first terminal and a second terminal, each of the terminals of each photosensor being isolated from the terminals of the other photosensors, wherein each photosensor responds to an incident light level by producing a charge difference between the first and second terminal. There is a differential circuit selectively coupled to the first and second terminals of one of the photosensors for producing an output signal related to the charge difference between the first and second terminals. | 08-06-2009 |
20090200451 | COLOR PIXEL ARRAYS HAVING COMMON COLOR FILTERS FOR MULTIPLE ADJACENT PIXELS FOR USE IN CMOS IMAGERS - Image sensors and methods of operating image sensors. An image sensor includes an array of pixels and an array of color filters disposed over the array of pixels such that each different color filter is disposed over multiple pixels. A method of operating an image sensor including an array of two by two blocks of single color pixels includes determining a level of incident light, determining an incident light value corresponding to the level of incident light and comparing the incident light value to a predetermined threshold value. If the incident light value is less than the predetermined threshold value, a combined signal is read from the two by two blocks. If the incident light value is less than the predetermined threshold value, an individual signal is read from each pixel. | 08-13-2009 |
20090200452 | IMAGE SENSOR WITH BURIED SELF ALIGNED FOCUSING ELEMENT - An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region. | 08-13-2009 |
20090212197 | Large -area pixel for use in an image sensor - A pixel for detecting incident radiation (In) over a large area with high sensitivity and low power consumption. The pixel comprises a semiconductor substrate ( | 08-27-2009 |
20090218476 | RADIATION IMAGE PICKUP APPARATUS, ITS CONTROL METHOD, AND RADIATION IMAGE PICKUP SYSTEM - A radiation image pickup apparatus or the like which realizes improvement of noise resistance characteristics when adding pixel signals is provided. For this purpose, the radiation image pickup apparatus has a switching unit which is arranged between a signal wiring and an amplifier and can switch electrical connection among a plurality of signal wirings and electrical connection between a predetermined one of the plurality of signal wirings and the amplifier corresponding thereto. In accordance with mode setting, the switching unit switches a first state where the plurality of signal wirings are electrically connected and the predetermined signal wiring and the corresponding amplifier are electrically disconnected and a second state where the plurality of signal wirings are electrically disconnected and the predetermined signal wiring and the corresponding amplifier are electrically connected. | 09-03-2009 |
20090230287 | STACKED IMAGE SENSOR WITH SHARED DIFFUSION REGIONS IN RESPECTIVE DROPPED PIXEL POSITIONS OF A PIXEL ARRAY - A CMOS image sensor or other type of image sensor comprises a sensor wafer and an underlying circuit wafer. The sensor wafer comprises a plurality of photosensitive elements arranged in respective positions of a two-dimensional array of positions in which a subset of the array positions do not include photosensitive elements but instead include diffusion regions each of which is shared by two or more of the photosensitive elements. The sensor wafer is interconnected with the circuit wafer utilizing a plurality of inter-wafer interconnects coupled to respective ones of the shared diffusion regions in respective ones of the array positions that do not include photosensitive elements. The image sensor may be implemented in a digital camera or other type of image capture device. | 09-17-2009 |
20090230288 | METHOD FOR THE OPERATION OF A PHOTOELECTRIC SENSOR ARRAY - A method for operating a sensor array of pixels which each generate a content corresponding to light incident thereon over an exposure period includes the following operations. The pixels are arranged into first and second regions and are reset such that the contents are cleared. The pixels are then exposed to receive light for a first exposure period. The exposure is then interrupted during which the content of each pixel in the first region is read. The pixels are then exposed to receive light for a second exposure period. The exposure is then interrupted during which the content of each pixel in the second region is read. The exposing and interrupting are performed without resetting the pixels such that the read content of each first region pixel depends on the first exposure period and the read content of each second region pixel depends on the first and second exposure periods. | 09-17-2009 |
20090230289 | Pixel Structure Having Shielded Storage Node - A pixel structure having a shielded storage node. A pixel comprises a sample transistor coupled to a light detecting stage. The sample transistor comprises an inner junction region surrounding and coupled to a storage node and a gate disposed around at least three sides of the inner junction region that operates as a charge barrier to shield the storage node. A memory capacitor is coupled to the storage node. | 09-17-2009 |
20090236497 | CONVEX LENSLET ARRAY DIFFUSER - An illuminator system comprising an illuminator array positioned adjacent to an image bearing surface, the illuminator array comprising a plurality of discrete illuminator elements spaced in a linear arrangement, the illuminating elements each being configured to emit a light beam for transmission to the image bearing surface at an incidence angle; a light diffuser comprising a plurality of rounded lenslets having convex or concave configuration positioned between the illuminator array and the image bearing surface, the rounded lenslets being positioned with respect to the illuminator array to receive the light beams emitted by the illuminator elements and to diffuse the light beams being transmitted to the image bearing surface in the linear direction of the illuminator array; and a linear sensor array comprising a plurality of sensors positioned adjacent to the image bearing surface such that the light beams reflecting off the image bearing surface at a reflectance angle are received by the sensors. | 09-24-2009 |
20090236498 | VARIABLE TRANSFER GATE OXIDE THICKNESS FOR IMAGE SENSOR - A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region. | 09-24-2009 |
20090242735 | SOLID-STATE IMAGE PICKUP DEVICE AND MASK MANUFACTURING METHOD - A solid-state image pickup device includes: a light receiving region where photoelectric conversion elements are two-dimensionally arranged; and a microlens layer which has microlenses that introduce incident light into the photoelectric conversion elements. The microlens layer has a plurality of regions each having different microlens pitches. At least one region has a plurality of microlenses, and a pitch of the microlenses is different from a pitch of the photoelectric conversion elements. | 10-01-2009 |
20090242736 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF AND ELECTRONIC APPARATUS AND MANUFACTURING METHOD THEREOF - A solid-state imaging device is provided. The solid-state imaging device includes a substrate having a light sensing part for each of pixels; and one or more rod members made of a light transmissive material above the light sensing part for each of the pixels. | 10-01-2009 |
20090242737 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a light receiving section (LRS) comprising pixels. The LRS is divided into division regions; a charge transferring section (CTS) transferring charges accumulated in the LRS; an accumulation control electrode provided between the LRS and the CTS transfers charge accumulated in the LRS to the CTS responsive to an accumulation control signal; a monitoring sensor group comprising monitoring sensors respectively provided for the division regions, outputting sensor outputs of the monitoring sensors corresponding to charges amounts of the division regions; a charge detecting circuit outputting a charge detection signal indicating that a predetermined charge quantity is accumulated in at least one of the division regions, based on the sensor outputs from the monitoring sensor group; and a signal control circuit outputting the accumulation control signal in response to the charge detection signal. The charge detecting circuit comprises division region charge detecting sections for the monitoring sensors. | 10-01-2009 |
20090242738 | METHOD AND APPARATUS EMPLOYING DYNAMIC ELEMENT MATCHING FOR REDUCTION OF COLUMN-WISE FIXED PATTERN NOISE IN A SOLID STATE IMAGING SENSOR - An imager having a switching circuit that couples pixel columns to different sample and hold circuits to reduce the noticeability of column-wise fixed pattern noise. A controller randomly couples a pixel column to a sample and hold circuit, therefore fixed pattern noise emanating from a particular sample and hold circuit is not always associated with a single pixel column. Therefore the visual perception of fixed pattern noise associated with a particular sample and hold circuit is reduced. | 10-01-2009 |
20090242739 | SEMICONDUCTOR IMAGING DEVICE HAVING A PLURALITY OF PIXELS ARRANGED IN A MATRIX-LIKE PATTERN - In an arrangement with four PDs (PD | 10-01-2009 |
20090242740 | SOLID STATE IMAGING DEVICE, METHOD OF DRIVING SOLID STATE IMAGING DEVICE, AND IMAGE PICKUP APPARATUS - A solid-state imaging device which includes a pixel unit, a plurality of pixels in the pixel unit which are two dimensionally arranged in rows and columns and each include a photoelectric conversion element and a reset element, a driver unit which sequentially applies selective scanning to each respective row of the pixel unit, a mode switching circuit, where the mode switching circuit is configured to charge a portion of the pixels in the pixel unit and to apply an intermediate voltage to a gate of each reset element in the non-charged pixels. | 10-01-2009 |
20090250594 | SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A solid-state image sensor that has a high pixel count and includes a color filter having high color reproducibility is provided. The solid-state image sensor includes: light-collecting elements each of which is a medium containing dispersant particles; light-receiving elements each of which is provided for a corresponding one of the light-collecting elements, and which receives light collected by the corresponding one of the light-collecting elements and generates an electric signal; and electrical wiring for transferring the electric signal, wherein each of the light-collecting elements has one of plural light-dispersion functions that are different depending on the corresponding light-receiving elements. | 10-08-2009 |
20090256059 | Solid state focal plane array for hyperspectral imaging applications - A focal plane array suitable for use in hyperspectral imaging applications is provided. The focal plane array comprises pixels comprising arrays of photodiodes, wherein each photodiode in each array is selectively sensitive to a different wavelength of a set of wavelengths. | 10-15-2009 |
20090256060 | PIXEL ARRAY WITH GLOBAL SHUTTER - A pixel comprises a photo-sensitive element for generating charges in response to incident radiation and a sense node. A transfer gate is positioned between the photo-sensitive element and the sense node for controlling transfer of charges to the sense node. A reset switch is connected to the sense node for resetting the sense node to a predetermined voltage. A first buffer amplifier has an input connected to the sense node. A sample stage is connected to the output of the first buffer amplifier and is operable to sample a value of the sense node. A second buffer amplifier has an input connected to the sample stage. Control circuitry operates the reset switch and causes the sample stage to sample the sense node while the photo-sensitive element is being exposed to radiation. An array of pixels is synchronously exposed to radiation. Sampled values for a first exposure period can be read while the photo-sensitive element is exposed for a second exposure period. | 10-15-2009 |
20090256061 | Image sensors with enhanced charge transmission characteristics - An image sensor includes photoelectric conversion elements formed adjacent to each other on a substrate. Two transmission elements transmit charge accumulated in two adjacent photoelectric conversion elements to a first floating diffusion region, and another two transmission elements transmit charge accumulated in the other two photoelectric conversion elements to a second floating diffusion region. The first floating diffusion region is electrically connected to the second floating diffusion region. A plurality of readout elements read out the charge transmitted to the first and the second floating diffusion regions. The image sensor also includes a dummy gate group including at least one dummy gate arrayed substantially parallel to a readout gate of the plurality of readout elements. | 10-15-2009 |
20090261235 | CMOS Image Sensor With High Sensitivity Wide Dynamic Range Pixel For High Resolution Applications - A CMOS image sensor in which each pixel includes a conventional pinned diode (photodiode), a Wide Dynamic Range (WDR) detection (e.g., a simplified time-to-saturation (TTS)) circuit, a correlated double sampling (CDS) circuit, and a single output chain that is shared by both the CDS and WDR circuits. The pinned diode is used in the conversion of photons into charge in each pixel. In one embodiment, light received by the photodiode is processed using a TTS operation during the CDS integration phase, and the resulting TTS output signal is used to determine whether the photodiode is saturated. When the photodiode is saturated, the TTS output signal is processed to determine the amount of light received by the photodiode. When the photodiode is not saturated, the amount of light received by the photodiode is determined using signals generated by the readout phase of the CDS operation. | 10-22-2009 |
20090266974 | WAVELENGTH-SENSITIVE DETECTOR WITH ELONGATE NANOSTRUCTURES - A wavelength-sensitive detector is provided that is based on elongate nanostructures, e.g. nanowires. The elongate nanostructures are parallel with respect to a common substrate and they are grouped in at least first and second units of a plurality of parallel elongate nanostructures. The elongate nanostructures are positioned in between a first and second electrode, the first and second electrodes lying respectively in a first and second plane substantially perpendicular to the plane of substrate, whereby all elongate nanostructures in a same photoconductor unit are contacted by the same two electrodes. Circuitry is added to read out electrical signals from the photoconductor units. The electronic density of states of the elongate nanostructures in each unit is different, because the material, of which the elongate nanostructures are made, is different or because the diameter of the elongate nanostructures is different. Each unit of elongate nanostructures therefore gives a different response to incident photons such that wavelength-specific information can be derived with the device. | 10-29-2009 |
20090266975 | IMAGE SENSOR AND IMAGE SENSING APPARATUS - An image sensor comprises a photoelectric conversion unit; a transfer transistor which has a gate electrode; a multilayer wiring structure which defines an aperture region above the photoelectric conversion unit; and a waveguide which guides light entering the aperture region to the light receiving surface, wherein the multilayer wiring structure includes a first wiring layer which is an uppermost wiring layer and defines two contour sides of the aperture region in a first direction, and a second wiring layer which is arranged between the gate electrode and the first wiring layer in a direction perpendicular to the light receiving surface, and defines two contour sides of the aperture region in a second direction, and wherein the gate electrode is arranged to overlap part of the light receiving surface and have a longitudinal direction along the first direction. | 10-29-2009 |
20090272879 | High conversion gain image sensor - An image sensor includes a photosensitive element, a reset circuit, an amplifier transistor, and a current source. The photosensitive element is coupled to generate an image charge in response to incident light and transfer the image charge to a circuit node. The reset circuit is coupled to selectively reset a voltage at the circuit node. The amplifier transistor includes a gate terminal responsive to the voltage at the circuit node. A current source is coupled between a high level power rail and a second terminal of the amplifier transistor. | 11-05-2009 |
20090272880 | GUIDED-MODE-RESONANCE TRANSMISSION COLOR FILTERS FOR COLOR GENERATION IN CMOS IMAGE SENSORS - Imager pixel arrays and methods for forming imager pixel arrays. An image sensor pixel includes a photosensor and a waveguide grating resonance filter formed over the photosensor. The waveguide grating resonance filter is configured to pass light to the photosensor in a wavelength band and to block light outside of the wavelength band. The waveguide grating resonance filter includes a grating material having a first refractive index and arranged in a grating pattern with a grating pitch, and has an effective refractive index that is a function of the first refractive index. A combination of the grating pitch and the effective refractive index is selected to correspond to the wavelength band. | 11-05-2009 |
20090272881 | Apparatus, method, and system providing pixel having increased fill factor - A method, apparatus, and system providing a pixel having increased fill factor by removing the row select transistor. A reset transistor in the pixel is connected to a column line, and the column line is used alternatively as a pixel readout line and as a voltage supply line for resetting a storage region in the pixel through the resent transistor. | 11-05-2009 |
20090278031 | Solid-state imaging device and imaging apparatus - There is provided a solid-state imaging device, including: a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and a laminated film formed on said semiconductor substrate; wherein said laminated film includes a hydrogen desorbing film for desorbing hydrogen, and a hydrogen blocking-off film disposed so as to overlie said hydrogen desorbing film. | 11-12-2009 |
20090283663 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF - It is an object of the present invention to provide a solid-state imaging device capable of significantly improving the signal readout characteristics of the pixel compared to the conventional technologies at low cost, without degrading the reliability, and a driving method thereof. The solid-state imaging device according to the present invention is a solid-state imaging device which includes a drive circuit, and the drive circuit includes: a P-channel transistor and a N-channel transistor which include gates connected to an output of the scanning circuit, and which include drains that are connected to each other, and a connecting point of the drains is connected to the control signal line, a switch which switches between VHI and DVDD to be supplied to a source of the P-channel transistor, and a switch which switches between VLOW and VGND to be supplied to a source of the N-channel transistor. | 11-19-2009 |
20090289171 | OPTICAL POINTING DEVICE - An optical pointing device is provided. The optical pointing device includes an image sensor including a photocell array including a plurality of photocells for sensing light and generating an analog signal corresponding to the light, the image sensor sequentially outputting analog signals from the plurality of photocells, a comparator for comparing the signals output from the image sensor to generate a relative comparative signal, and comparing at least one signal output from the image sensor with a comparative signal to generate an absolute comparative signal, and a controller for outputting motion data using the relative comparative signal and outputting a shutter control signal using the absolute comparative signal. The optical pointing device does not include an A/D converter or a pre-filter circuit, thus reducing a chip size of a semiconductor integrated circuit, unlike a conventional optical pointing device. Furthermore, the optical pointing device can obtain high-quality image data and accordingly accurate motion data of an object, by using the comparator having the offset removal and the offset correction circuit external to the image sensor. Also, the use of the second photocell separate from the image sensor can reduce data computational complexity of the shutter control signal controller in the image processor, thus reducing current consumption in the image processor. | 11-26-2009 |
20090289172 | DETECTION OF SEED LAYERS ON A SEMICONDUCTOR DEVICE - A device and/or method which detects a seed layer and a device and/or method of forming layers on a semiconductor device. The device which forms layers on the semiconductor device may include a metal layer forming unit (which forms a metal layer on a wafer), a copper seed layer forming unit (which forms a copper seed layer on the metal layer), a wafer alignment device (which includes a wafer alignment unit which aligns the wafer to a predetermined position), a copper seed layer detecting unit (which is positioned above the wafer alignment unit to detect the copper seed layer formed on the wafer), and a plating unit (which forms a copper interconnection layer on the copper seed layer). | 11-26-2009 |
20090294629 | Image sensing device - In an image sensing device having a housing, having a circuit assemblage disposed on a circuit board, and having an image sensor that is disposed on a circuit board and in front of an opening of the housing, in order to improve the shielding effect, at least one shielding layer is disposed on the circuit board carrying the image sensor. | 12-03-2009 |
20090294630 | IMAGE SENSOR, IMAGE READING DEVICE AND PRODUCTION METHOD OF IMAGE SENSOR - An image sensor and a manufacturing method thereof are provided, so that the warp or the distortion is not caused even if there is the thermal expansion difference or the thermal contraction difference in the longitudinal direction between the linear illuminating device and the frame. The image sensor comprises a linear illuminating device for illuminating an original; a light-receiving element array for receiving reflected light from the original; a lens array for focusing the original on the light-receiving element array; a frame for containing the linear illuminating device, the lens array, and the light-receiving element array; and a resilient retaining portion for pressing the linear illuminating device, which is mounted in the frame, into the frame. | 12-03-2009 |
20090294631 | IMAGE SENSOR HAVING REDUCED WELL BOUNCE - A CMOS image sensor or other type of image sensor comprises a pixel array and sampling and readout circuitry associated with the pixel array. In conjunction with readout of one or more pixels in a selected group of pixels of the pixel array, a pixel power line signal of the array transitions from an inactive state to an active state, and a reset signal of a non-selected group of pixels of the pixel array transitions from an active state to an inactive state within a predetermined time prior to the transition of the pixel power line signal from its inactive state to its active state. This arrangement advantageously reduces well bounce in the image sensor. The image sensor may be implemented in a digital camera or other type of digital imaging device. | 12-03-2009 |
20090294632 | GLOBALLY RESET IMAGE SENSOR PIXELS - An imaging circuit includes a pixel array that is arranged to concurrently reset pixels in a pixel array in response to a global reset signal. The pixels are arranged in rows, such that the rows can be individually selected by a row select line. A reset transistor concurrently resets the pixels by coupling a reset voltage to a floating diffusion of the pixel. A transfer gate transistor selectively couples the floating diffusion to a storage region. A storage gate transistor selectively couples the storage region to a photosensitive region so that the reset transistor, the transfer gate transistor, and the storage gate transistor for each of the pixels can be activated in response to the global reset signal. A double correlated sampler may be used to provide a correlated double sample using a first sampled voltage of a reset voltage and a second sampled voltage of a pixel voltage that is produced when a photodiode region is exposed to incident light. | 12-03-2009 |
20090294633 | Image sensor using photo-detecting molecule and method of operating the same - Provided is an image sensor using a photo-detecting molecule and a method of operating the image sensor. The image sensor may include a plurality of first electrodes disposed parallel to each other and a plurality of second electrodes disposed parallel to each other in a direction perpendicular to the first electrodes and above the first electrodes, and a plurality of subpixels formed in regions where the first electrodes cross the second electrodes. Each of the subpixels may comprise a photo-detecting molecule layer that may generate charges by absorbing light having a certain wavelength, a charge generation layer that may form a plurality of secondary electrons by receiving the charges from the photo-detecting molecule layer when a known voltage is applied between the first electrodes and the second electrodes, and a variable resistance layer, an electrical state of which is changed by receiving the secondary electrons generated from the charge generation layer. | 12-03-2009 |
20090294634 | IMAGING DEVICE - A close contact type imaging device is an imaging device for acquiring an image of an object in a state that the object is in close contact to an image sensor. This imaging device has an angle limiting filter. The angle limiting filter is constructed from: a glass substrate of a parallel plate; and a dielectric multilayer film provided on the glass substrate. This angle limiting filter transmits light within a particular wavelength range approximately perpendicularly incident onto the surface, and shields light outside the particular wavelength range and light within the particular wavelength obliquely incident onto the surface. | 12-03-2009 |
20090294635 | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method - In a scatterometry apparatus having an illumination aperture stop, a field stop is provided at an intermediate image to control a spot size on a substrate. The field stop may be apodized, e.g., having a transmissivity in the form of a trapezium or a Gaussian shape. | 12-03-2009 |
20090302202 | SOLID-STATE IMAGE PICKUP DEVICE - There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode. | 12-10-2009 |
20090302203 | IMAGING DEVICE - An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure. | 12-10-2009 |
20090309008 | 4 TRANSISTORS 4 SHARED STEP & REPEAT UNIT CELL AND 4 TRANSISTORS 4 SHARED IMAGE SENSOR INCLUDING THE UNIT CELLS - A 4T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including four transistors and a 4T-4S image sensor including the 4T-4S step & repeat unit cell are provided. The 4T-4S step & repeat unit cell includes first and second shared image sensor unit cells. The first shared image sensor unit cell includes first and third photodiodes and five transistors. The second shared image sensor unit cell includes second and fourth photodiodes and five transistors. The second photodiode is disposed over the first photodiode. The third photodiode is disposed at a side of the second photodiode. A terminal of each of the fourth photodiode is connected to a first voltage source. Signals corresponding to images incident onto the first and third photodiodes are output through a first common detection line OUT | 12-17-2009 |
20090309009 | PHOTO DETECTOR DEVICE FOR DISPLAY DEVICE - A photo detector device for a display device includes many first conductive lines, many second conductive lines orthogonal to the first conductive lines, many switching transistors, and many photosensitive transistors. Each of the switching transistors includes a drain, a source, and a gate, wherein the sources are electrically connected to the second conductive line, the gates are electrically connected to the first conductive line, and the first conductive lines receive a control signal to control on/off states of the switching transistors. Each of the photosensitive transistors includes a drain, a source, and a gate, wherein the photosensitive transistor sources are electrically connected to the drains of the switching transistors, and the photosensitive transistor gates are connected to and maintained at the potential of the photosensitive transistor drains. | 12-17-2009 |
20090314928 | HIGH DYNAMIC RANGE IMAGE SENSOR - An image sensor includes a plurality of pixels, each pixel includes a first photosensitive region that collects charge in response to light and having a first sensitivity; a second photosensitive region that collects charge in response to light and having a second sensitivity that is lower than the sensitivity of the first photosensitive region; and a polarizer spanning the second photosensitive region. | 12-24-2009 |
20090321613 | Differential Source Follower Source Leader Addressable Node Readout Circuit - A readout circuit for reading from addressable nodes comprises first and second half-circuits of a differential amplifier. The first half-circuit comprises at least one source follower transistor adapted to receive an input signal from one of the addressable nodes, such as pixel readouts of an imaging system. The first half-circuit further comprises a row selector switch coupled to the source follower transistor to selectively activate the source follower transistor to receive the input signal. The second half-circuit comprises an output node for providing an output signal of a readout of a selected addressable node. The second half-circuit further comprises a source leader transistor coupled to the output node to provide a feedback signal based on the readout. A feedback loop is connected to the source leader transistor to provide feedback from the output node for utilization in a differential amplification of the input signal. | 12-31-2009 |
20090321614 | Imaging module with folded illuminating and imaging paths - An imaging module for imaging, and a reader for and a method of electro-optically reading, a target, include a support, an imaging assembly including a solid-state imager having an array of image sensors on the support for capturing return light over a field of view at a range of working distances from the target along a folded imaging path, and an illuminating assembly on the support for directing illumination light along a folded illuminating path having a length longer than the folded imaging path to uniformly illuminate the target with the illumination light. The longer length of the folded illuminating path enables the illuminating assembly to illuminate the target with more of the illumination light, and also enables the imaging assembly to capture more of the return light for increased imaging/reading performance. | 12-31-2009 |
20090321615 | SOLID-STATE IMAGING DEVICE - The solid-state image pickup device | 12-31-2009 |
20100006743 | PHOTOELECTRIC CONVERSION APPARATUS, IMAGING SYSTEM, AND PHOTOELECTRIC CONVERSION APPARATUS MANUFACTURING METHOD - A photoelectric conversion apparatus having a pixel array region and a peripheral region includes a pixel array, a readout unit, an output unit, a plurality of output lines, and a color filter layer which is arranged in the pixel array region and the peripheral region and includes a color filter arranged above the plurality of pixels. The color filter layer extends to surround the output lines when viewed from a direction perpendicular to a surface of a semiconductor substrate, and has an opening arranged above the plurality of output lines. The opening of the color filter layer is filled with gas or an insulator lower in dielectric constant than the color filter. | 01-14-2010 |
20100006744 | PHOTOELECTRIC CONVERSION DEVICE, MULTICHIP MODULE TYPE IMAGE SENSOR, CONTACT IMAGE SENSOR, AND IMAGE SCANNER - The invention provides a photoelectric conversion device, in which a decrease in sensitivity and a crosstalk between wirings are suppressed. Plural pixel columns are arranged in one direction, plural pixels are arranged in a different direction to the one direction in a column manner in the pixel column, and the pixel includes a photodiode PD, a reset transistor M | 01-14-2010 |
20100019127 | Solid-State Image Sensor and Signal Readout Method Thereof - After resetting the potential VPD of the photodiode ( | 01-28-2010 |
20100019128 | Focal Plane Array Imager - An imaging sensor having sensitivity at the single-photon level is disclosed. The sensor comprises an array of pixels, each of which comprises a negative-feedback avalanche diode and a read-out circuit that includes a counter. The counter keeps track of the number of photons detected by the diode during a given time period. | 01-28-2010 |
20100019129 | IMAGING DEVICE AND IMAGING APPARATUS - A photoelectric conversion element includes a plurality of light receiving portions. A color filter is provided on a light receiving surface of the photoelectric conversion element with filters for red, green, and blue arranged corresponding to the light receiving portions, such that R, G, and B pixels including the light receiving portions and the filters are arranged in a two-dimensional array. A transfer unit transfers a light in a wavelength range other than lights of green and blue incident on the G pixel and a light in a wavelength range other than lights of blue and green incident on the B pixel to a neighboring R pixel. | 01-28-2010 |
20100019130 | CHIP-STACKED IMAGE SENSOR - A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads. | 01-28-2010 |
20100025568 | IMAGE SENSING DEVICE - A device includes an electron emission source array including a plurality of electron emission sources, a photoelectric conversion film disposed to face the electron emission source array, and an intermediate electrode provided between the electron emission source array and the photoelectric conversion film, and an intermediate electrode current detector that applies a positive potential, relative to a potential of the electron emission source array, to the intermediate electrode and detects a current flowing in the intermediate electrode. | 02-04-2010 |
20100025569 | SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND IMAGING DEVICE - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films. | 02-04-2010 |
20100025570 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING THE APPARATUS - A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line. | 02-04-2010 |
20100025571 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA - A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide. | 02-04-2010 |
20100032549 | MULTI-CHIP PHOTOSENSOR WITH INDEPENDENTLY ADJUSTABLE INTEGRATION TIMES FOR EACH CHIP - A photosensitive apparatus, such as a scanner used in a digital copier, includes a plurality of photosensor chips. Each photosensor chip comprises a first set of photosensors, and a control portion for accepting an external integration signal, the signal causing an integration time for the set of photosensors. A signal adjustor is associated with the control portion, and effectively alters the external integration signal to cause the control portion to cause a modified integration time for the first set of photosensors. The system enables adjustments of integration times among chips within an apparatus sharing a common control line. | 02-11-2010 |
20100032550 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are embodiments of an image sensor and a method of manufacturing the same. The image sensor includes an insulating layer on a substrate, and a graded-index microlens in the insulating layer corresponding to each pixel of the image sensor. | 02-11-2010 |
20100038519 | Image Sensing Module - An image sensing module includes a carrier and a plurality of image sensing devices, wherein the image sensing devices are electrically connected to the carrier. Each of the image sensing devices has a sensing area, and the sensing areas face different directions. Each of the image sensing devices has a field of view, and there is an overlap between the fields of view of two adjacent image sensing devices. The image sensing module has a wider field of view. | 02-18-2010 |
20100044552 | AUTOMATIC SIMULTANEOUS DUAL GAIN READOUT INTEGRATED CIRCUIT USING THRESHOLD VOLTAGE SHIFTS OF MOSFET BULK TO SOURCE POTENTIAL - The present disclosure is directed to automatic gain switching circuits for implementation with photodetectors that include a switchable storage network including a storage element. The switchable storage network, such as one or more capacitors, is configured and arranged to respond to a photocurrent from the photodetector and provide an increased storage for the circuit at a predetermined photocurrent. The storage elements can include one or more capacitors that can be coupled to integration capacitors of the photodetector. The switchable networks can include flux sensing switches such as MOSFETS that can activate at a desired or predetermined photocurrent level. Related methods of providing multiple gain values for a photodetector circuit, as well as focal plane arrays and imaging systems with automatic gain shifting are also described. | 02-25-2010 |
20100044553 | CMOS IMAGE SENSOR PACKAGE AND CAMERA MODULE WITH SAME - An image sensor package includes a cover glass, an image sensor chip, and a reflecting layer. The cover glass includes a first surface and a second surface at opposite sides thereof. The image sensor chip includes a silicon layer formed on the second surface of the cover glass, a plurality of pixel regions formed on a third surface of the silicon layer facing away from the cover glass, and a plurality of bumps formed on the third surface of the silicon layer, the bumps capable of electrically connecting the image sensor chip to a circuit board. The reflecting layer covers the pixel regions of the image sensor chip. | 02-25-2010 |
20100051784 | IN-PIXEL SUMMING OF CHARGE GENERATED BY TWO OR MORE PIXELS HAVING TWO RESET TRANSISTORS CONNECTED IN SERIES - An image sensor includes (a) a plurality of pixels, wherein each pixel comprises:(i) at least one photosensor; (ii) at least one transfer gate connecting the photosensor to a floating diffusion; (iii) an output transistor connected to the floating diffusion; (iv) a first reset transistor connected between the floating diffusion and a summing node; (v) a second reset transistor connected to the summing node; and (b) a first summing transistor connecting together the summing nodes of two or more pixels. | 03-04-2010 |
20100051785 | IMAGE SENSOR WITH PRISMATIC DE-MULTIPLEXING - An image sensor includes a first imaging pixel for a first color having a photosensitive region disposed within a substrate of the image sensor and a second imaging pixel for a second color that is different from the first color having a photosensitive region disposed within the substrate. A refraction element disposed adjacent to the substrate, so that the refraction element refracts light of the first color to the photosensitive region of the first imaging pixel and refracts light of the second color to the photosensitive region of the second imaging pixel. | 03-04-2010 |
20100059662 | CMOS IMAGER AND APPARATUS WITH SELECTIVELY SILICIDED GATES - The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager. | 03-11-2010 |
20100065722 | METHOD AND DEVICE FOR DETECTING AN OBJECT THAT CAN RETROREFLECT LIGHT - According to the invention, two simultaneous images with different wavelengths (λ | 03-18-2010 |
20100072349 | RESPONSE-ENHANCED MONOLITHIC-HYBRID PIXEL - A light-sensing pixel is described that includes more than one detector element, each of which is sensitive to a range of wavelengths of the electromagnetic spectrums. The detectors are arranged in a readout circuit that can be constructed on a monolithic semiconductor product such that one or more of the detectors can be switched on or off to include or exclude an output contribution from said detectors and enhance the response of the pixel. Also, the detectors can included a laser-treated semiconductor sensor for efficient sensing of radiation in one or more regions of the spectrum. Arrays and imaging products using such pixels are disclosed. | 03-25-2010 |
20100072350 | ACTIVE PIXEL WITH PRECHARGING CIRCUIT - An active pixel including a precharge circuit for a sample and hold (S/H) stage and methods of operating the same are provided. In addition to the precharge circuit and S/H stage, the pixel may include a sensor circuit to generate a signal in response to electromagnetic radiation received on a photodetector included therein, and a multiplexer circuit. The S/H stage may include a switching-element to couple the signal from the sensor circuit to a capacitor element in the S/H stage to read-out and store the signal. The multiplexer circuit may include a switching-element coupled to an output node of the capacitor element to couple the signal to a column. The precharge circuit may include a switching-element coupled between the output node of the capacitor element and the column to precharge the capacitor element to a fixed voltage applied to the column when the S/H stage is not reading-out the signal. | 03-25-2010 |
20100078544 | INCREASING READOUT SPEED IN CMOS APS SENSORS THROUGH BLOCK READOUT - A method and associated architecture for dividing column readout circuitry in an active pixel sensor in a manner which reduces the parasitic capacitance on the readout line. In a preferred implementation, column readout circuits are grouped in blocks and provided with block signaling. Accordingly, only column output circuits in a selected block significantly impart a parasitic capacitance effect on shared column readout lines. Block signaling allows increasing pixel readout rate while maintaining a constant frame rate for utility in large format high-speed imaging applications. | 04-01-2010 |
20100090092 | IMAGE PICKUP APPARATUS - An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit. | 04-15-2010 |
20100090093 | Image Sensor and Method For Manufacturing the Same - An image sensor is provided. The image sensor comprises a readout circuitry, a first image sensing device, an interconnection, and a second image sensing device. The readout circuitry is disposed in a first substrate. The first image sensing device is disposed at one side of the readout circuitry of the first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The second image sensing device is disposed over the interconnection. | 04-15-2010 |
20100090094 | Solid-state detector - In a solid-state detector including a plurality of linear electrodes for outputting signals that are arranged parallel to each other, a wireless signal processing unit that processes wireless signals received by at least one of the plurality of linear electrodes for outputting signals and that extracts data superposed on the wireless signals is connected to the at least one of the plurality of linear electrodes for outputting signals in such a manner that connection/disconnection to the at least one of the plurality of linear electrodes for outputting signals is switchable. | 04-15-2010 |
20100102204 | ACTIVE OPTICAL LIMITING SEMICONDUCTOR DEVICE AND METHODS - An optical switching system comprising an embodiment with a high pass filter operable to eliminate a portion of frequencies present in an image and an optical device operative to receive the spectrally modified image from the high pass filter, alternatively amplify the spectrally modified image, and propagate at least those frequency components in the spectrally modified image exhibiting a frequency less than an absorption frequency of the optical switching device when the optical switching device is active. Alternatively, the optical switching system may transmit an image only when the system is active. The optical switching system may, for example, comprise superluminescent light emitting diodes which may be, for example, formed in the shape of an inverted truncated prism. For human viewing purposes, the operative transmission ranges may closely coincide with the maximum sensitivity of the photopic response of the corresponding red, blue and green cones in human eyes. | 04-29-2010 |
20100102205 | VENTED HEADER ASSEMBLY OF AN IMAGE INTENSIFIER DEVICE - An image intensifier device and a method of fabricating the image intensifier device are disclosed. The image intensifier device includes a microchannel plate (MCP) having a thin-film applied to a surface thereof. An anode assembly comprising an image sensor mounted to a header is positioned adjacent the MCP. A spacer defining a mounting surface is positioned against a mounting surface of the header of the anode assembly for separating the MCP from the anode assembly. A recess is defined in either the header or the spacer at the interface between the header and the spacer. The recess forms a passageway defined between the spacer and the header thru which organic gases pass. | 04-29-2010 |
20100102206 | NEAR INFRARED/COLOR IMAGE SENSOR - A near infrared/color photodetector made in a monolithic form in a lightly-doped substrate of a first conductivity type covering a holder and comprising a face on the side opposed to the holder. The photodetector includes at least first and second photodiodes for the storage of electric charges photogenerated in the substrate, the second photodiode being adjacent to said face; and a first region extending at least between the second photodiode and the holder, preventing the passage of said charges between a first substrate portion being located between said region and the holder and a second substrate portion extending between said face and the first region, the first photodiode being adapted to store at least charges photogenerated in the first substrate portion and the second photodiode being adapted to store charges photogenerated in the second substrate portion. | 04-29-2010 |
20100108861 | Multispectral imaging device based on multiple quantum wells - The invention relates to a multispectral imaging device comprising a multiple-quantum-well structure operating on inter-sub-band transitions by absorbing radiation at a wavelength λ lying within a set of wavelengths to which said structure is sensitive, said structure comprising a matrix of individual detection pixels, characterized in that the matrix is organized in subsets (E | 05-06-2010 |
20100127156 | Two dimensional solid-state image pickup device - A two-dimensional solid-state image pickup device includes a plurality of pixel regions arranged in a two-dimensional matrix in X and Y directions. Each of the pixel regions includes at least a light-receiving element, and a light-condensing element. The light-condensing element is a sub-wavelength lens including protrusions each having a size equivalent to or smaller than a wavelength of an electromagnetic wave incident on the light-receiving element. Each of the protrusions has a rounded edge. | 05-27-2010 |
20100127157 | COMPOUND EYE CAMERA MODULE - A compound eye camera module according to the present invention includes a lens array including at least two lenses; an imaging element having two imaging areas corresponding to the two lenses; a light shielding block having a light shielding wall for separating optical paths of light transmitted through the two lenses; an optical filter for transmitting light of a specific wavelength range among the light transmitted through the two lenses; and a substrate having an opening larger than the optical filter. The imaging areas and the optical filter are located at a position corresponding to the opening. The imaging element is fixed to a face of the substrate opposite to the side of the lens array. The imaging element is in contact with a face of the optical filter which faces the imaging element. The light shielding block is fixed to a face of the optical filter which faces the light shielding block. The optical filter has portions protruding outside both of ends of the imaging element in a direction connecting the two optical axes of the two lenses. The light shielding block is fixed to the protruding portions of the optical filter. | 05-27-2010 |
20100127158 | OPTOELECTRONIC SENSOR FOR SAFEGUARDING A HAZARDOUS AREA - An optoelectronic sensor for safeguarding a hazardous area, such as a light grid, has a first and a second sensor part. The two sensor parts are arranged at a spatial distance from one another. Each sensor part has a plurality of transmitting elements for generating transmitted beams and a plurality of receiving elements for receiving the transmitted beams. In this way, a plurality of transmitted beams in opposite directions are formed between the sensor parts. Each sensor part has at least one evaluation circuit, which is coupled to the receiving elements of the respective sensor part. Each evaluation circuit is designed to generate a switch-off signal in a manner dependent on the respectively coupled receiving elements. In a preferred configuration, each sensor part has a plurality of evaluation circuits which are coupled to one another to form a series arrangement of evaluation circuits, and which are additionally coupled to a common data bus connection. | 05-27-2010 |
20100133418 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. | 06-03-2010 |
20100133419 | ELECTRONIC ELEMENT WAFER MODULE AND METHOD FOR MANUFACTURING SAME, ELECTRONIC ELEMENT MODULE, OPTICAL ELEMENT WAFER MODULE AND METHOD FOR MANUFACTURING SAME, AND ELECTRONIC INFORMATION DEVICE - A method for manufacturing an electronic element wafer module is provided, the method comprising: a protective resin film forming step of forming a protective resin film on only light openings of the plurality of wafer-shaped optical elements; a light shielding film forming step of filming a light shielding film on an area except for the light openings or an entire area including the light openings; and an optical aperture forming step of removing the protective resin film, or removing the protective resin film and a light shielding film material on the protective resin film, to form an optical aperture structure by the light shielding film at the light openings. | 06-03-2010 |
20100140453 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging device including: a pixel part configured to include a plurality of light receiving regions corresponding to different wavelengths; and an element isolator configured to separate the plurality of light receiving regions from each other in such a way that each of the light receiving regions in the pixel part has a size suited to an energy profile of light irradiation with a wavelength handled by the light receiving region. | 06-10-2010 |
20100140454 | SOLID STATE IMAGING DEVICE - A solid state imaging device comprises a pixel unit, a first controller, and a second controller. The pixel unit has a two dimensional matrix of pixels and each of the pixels is arrayed in the matrix. The first controller independently controls the output unit row by row. The second controller independently controls the first reset unit row by row. The each of pixels comprises a photoelectric conversion element, a first reset unit, a charge retention unit, a transmitter, a second reset unit, and an output unit. The element converts incident light into a signal charge and accumulates the converted signal charge. The first reset unit resets the signal charge. The charge retention unit retains a signal charge output from the photoelectric conversion element. The transmitter transmits the signal charge to the charge retention unit. The second reset unit resets the signal charge. The output unit outputs a pixel signal in response to the signal charge to a vertical signal line. | 06-10-2010 |
20100148035 | ROW DRIVEN IMAGER PIXEL - An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation. | 06-17-2010 |
20100155576 | MULTI-COLOR CMOS PIXEL SENSOR WITH SHARED ROW WIRING AND DUAL OUTPUT LINES - An array of multicolor CMOS pixel sensors has a plurality of photosensors per pixel, each photosensor coupled to a single sense node through a select transistor having a select input, each pixel sensor including a reset transistor coupled to the sense node and having a reset input, an amplifier coupled to the sense node and a row-select transistor coupled to the amplifier. The select inputs and the reset inputs for pixel sensors in a pair of adjacent rows are coupled to select signal lines and reset signal lines associated with the pair of rows. The amplifier transistors in individual columns of each row are coupled to a column output line through a row-select transistor having a row-select input. The row-select inputs for pixel sensors in each row of the array are coupled to a row-select line associated with the row. | 06-24-2010 |
20100163710 | COMBINATION READER - An imaging system for collecting images of signals associated with a sample tile comprising a stage supporting the sample tile, a ring illuminator system emitting a uniform excitation energy upon an entirety of the sample tile causing at least a first signal to be generated from the sample tile, and an image collecting device collecting a first image of the first signal. The image collecting device further collecting a second image of a second signal emitted from the sample tile, wherein the second signal being different than the first signal. | 07-01-2010 |
20100163711 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device comprises pixel units, column signal lines, column circuits, a switching unit, and a mode control unit. Pixel units are two-dimensionally disposed in a matrix direction, and each of them comprises a photoelectric conversion unit and an amplifying unit. Column signal lines are provided for each column and the pixel signals from the amplifying units are output to each of rows. Column circuits are provided for each column and process signals from the column signal lines. A switching unit switches connection between the column signal lines and the column circuits. A mode control unit outputs signals to the switching unit and controls switching between a first mode in which the column signal lines are connected to the column circuits on the same column thereof and a second mode in which the column signal lines are connected to the column circuits on another column. | 07-01-2010 |
20100163712 | SOLID-STATE IMAGING DEVICE - In each photosensitive cell, a photodiode | 07-01-2010 |
20100171024 | OPTICAL FILTER - An optical filter | 07-08-2010 |
20100176271 | PIXEL ARRAY PREVENTING THE CROSS TALK BETWEEN UNIT PIXELS AND IMAGE SENSOR USING THE PIXEL - The present invention provides a pixel array having a three-dimensional structure and an image sensor having the pixel array. The pixel array has a three-dimensional structure in which a photodiode, a transfer transistor, a reset transistor, a convert transistor, and a select transistor are divided and formed on a first wafer and a second wafer, chips on the first and second wafers are connected in a vertical direction after die-sorting the chips. The first wafer includes a plurality of photodiodes for generating electric charges corresponding to an incident video signal, a plurality of transfer transistors for transferring the electric charges generated by the photodiodes to floating diffusion regions, a plurality of STIs circling one of the photodiodes and one transfer transistor connected to the one photodiode, a first super-contact which extends from a lower portion of the plurality of the STIs to a lower surface of the wafer, and a second super-contact which penetrates the plurality of the STIs and a portion of the first super-contact. The electric charges accumulated in the floating diffusion regions are transferred to the second wafer through the second super-contact. | 07-15-2010 |
20100176272 | PHOTOELECTRIC CONVERSION DEVICE, IMAGE CAPTURING SYSTEM, AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a photoelectric conversion unit which is arranged in a semiconductor substrate, a charge holding portion which is arranged in the semiconductor substrate and temporarily holds a charge generated by the photoelectric conversion unit, a first transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge generated by the photoelectric conversion unit to the charge holding portion, a charge-voltage converter which is arranged in the semiconductor substrate and converts a charge into a voltage, and a second transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge held by the charge holding portion to the charge-voltage converter, and the first transfer electrode is arranged to cover the charge holding portion, and not to overlap the second transfer electrode when viewed from a direction perpendicular to the upper surface of the semiconductor substrate. | 07-15-2010 |
20100176273 | Image pickup element and image pickup device - An image pickup element includes a light-receiving portion having a matrix arrangement formed by disposing first-direction arrays, each having photoelectric conversion portions arranged in a first direction with a predetermined gap maintained therebetween, in a second direction orthogonal to the first direction, and micro-lenses provided above the light-receiving portion. A certain first-direction array in the matrix arrangement is provided with a pair of photoelectric conversion portions that optically receive, via a pair of micro-lenses, photographic-subject light beams passing through a pair of segmental regions in an exit pupil of a photographic optical system, the pair of segmental regions being disposed biasedly in opposite directions from each other in the first direction. The pair of micro-lenses is disposed such that light axes thereof extend through vicinities of edges of the pair of photoelectric conversion portions, the edges being the farthest edges from each other in the first direction. | 07-15-2010 |
20100187401 | SOLID-STATE IMAGE PICK-UP DEVICE AND PIXEL SIGNAL READOUT METHOD - A solid-state image pick-up device and a method of reading out a pixel signal thereof are provided, and the solid-state image pick-up device provides a large dynamic range without an increase in the area of a pixel. Plural pixels are arranged therein. Each pixel includes a first potential well PW | 07-29-2010 |
20100187402 | METHOD OF PERFORMING HYPERSPECTRAL IMAGING WITH PHOTONIC INTEGRATED CIRCUITS - According to the invention, an integrated hyperspectral imager includes a planar photonic substrate. A plurality of imaging pixel photonic circuits is disposed in a M×N array on the planar photonic substrate. Each imaging pixel photonic circuit includes an input coupler configured to receive a broadband input electromagnetic radiation. A waveguide is optically coupled to the input coupler. A plurality of wavelength filters is optically coupled to the waveguide. Each wavelength filter has a wavelength filter input and a wavelength filter output. Each detector has a detector input optically coupled respectively to each of the wavelength filter outputs. Each detector has a respective detector output. The integrated hyperspectral imager is configured to provide electrical signals that are representative of a hyperspectral image of the received broadband input electromagnetic radiation. A method for recording an image based on a received electromagnetic radiation is also described. | 07-29-2010 |
20100187403 | Solid-state image pickup apparatus, electronic apparatus, and method of manufacturing a solid-state image pickup apparatus - Disclosed is a solid-state image pickup apparatus including a photoelectric converter formed on a substrate, a wiring portion formed above the photoelectric converter and constituted of multilayer wirings, and an insulating portion in which the multilayer wirings of the wiring portion are embedded, the insulating portion having a refractive index larger than a silicon oxide. | 07-29-2010 |
20100187404 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 07-29-2010 |
20100200729 | 3 TRANSISTORS 4 SHARED STEP & REPEAT UNIT CELL AND 3 TRANSISTORS 4 SHARED IMAGE SENSOR INCLUDING THE UNIT CELLS - A 3T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including three transistors and a 3T-4S image sensor including the 3T-4S step & repeat unit cell are provided. The 3T-4S step & repeat unit cell includes first to fourth photodiodes. A first shared image sensor unit cell is obtained by combining the first and second photodiodes with four transistors. A second shared image sensor unit cell is obtained by combining the third and fourth photodiodes with four transistors. Signals corresponding to images incident onto the first and second photodiodes are output through a first common detection line. Signals corresponding to images incident onto the third and fourth photodiodes are output through a second common detection line. A terminal of each of the four photodiodes is connected to a first voltage source. Conversion voltages corresponding to image signals incident onto two photodiodes via green filters are output through a common detection line. Conversion voltages corresponding to image signals incident onto the other two photodiodes via red and blue filters are output through another common detection line. | 08-12-2010 |
20100200730 | Solid state imaging device and electronic apparatus - A solid state imaging device includes: a sensor unit that has a semiconductor substrate in which pixels including photoelectric conversion parts are disposed in an array on a light receiving surface; a lens module which has a plurality of optical members including a lens and which is disposed such that light including information on an image to be imaged is incident on the light receiving surface of the sensor unit; and a phase shift mask in which regions for dividing all light beams into a plurality of groups are set and which makes a different phase shift occur in each of the regions for the light. | 08-12-2010 |
20100200731 | SOLID-STATE IMAGING DEVICE - It is intended to provide a CMOS image sensor with a high degree of pixel integration. A solid-state imaging device comprises a signal line ( | 08-12-2010 |
20100207011 | SYSTEM AND METHOD FOR PERFORMING OPTICAL NAVIGATION USING A COMPACT OPTICAL ELEMENT - A system and method for performing optical navigation uses an illumination optical element positioned between a light source and a navigation surface to bend and collimate a beam of light from the light source, which may be originally emitted in a direction normal to the navigation surface. The illumination optical element includes a concave surface to receive the beam of light from the light source and a convex surface to transmit the beam of light from the illumination optical element toward the navigation surface. The beam of light incident on the navigation surface produces light, which is received at an image sensor array to capture frames of image data for displacement estimation. | 08-19-2010 |
20100213350 | Solid-state imaging device, Imaging device, and semiconductor device - A solid-state imaging device includes: a pixel array unit; a vertical scan unit reading out analog pixel signals from the pixel array unit; an AD conversion unit provided each column for converting the analog pixel signals read out from the pixel array unit into digital data; a data memory unit having a data holding circuit that holds the digital data; a transfer driving unit driving a signal line for data transfer based on data of the data holding circuit; a signal amplification unit receiving the data of the data holding circuit and performs signal amplification; a potential fixing unit fixing an input terminal and/or internal wiring of the signal amplification unit to a predetermined potential; a drive power supply unit on/off-controlling power supply; a scan unit controlling the transfer driving unit to transfer the data to the signal amplification unit; and a drive control unit controlling entire operation. | 08-26-2010 |
20100213351 | SOLID STATE IMAGE SENSOR AND IMAGE SENSING APPARATUS INCORPORATED WITH THE SAME - A solid state image sensor and an image sensing apparatus incorporated with the solid state image sensor include: pixel arrays each provided with pixels, and an accumulating section e.g. a capacitor CX which sums up and accumulates signal charges obtained by exposure of an object with respect to a corresponding color at different timings when the signal charges are obtained by the pixels of each of the pixel arrays. A reset noise of a converting floating diffusion is outputted after the converting floating diffusion is reset. Thereafter, a summation of the reset noise, and the signal charges accumulated in the accumulating section is outputted. | 08-26-2010 |
20100219328 | Moveable Sensor Array and Method of Detecting Location of Calibration Fault - A printing device comprises a print head, imaging member, and a moveable sensor array. The print head is configured to deliver marking material to the imaging member as it moves in a process direction. The linear sensor array comprises a plurality of photo sensors configured to scan the imaging member. The photo detectors of the linear sensor array define a sensor axis that is substantially perpendicular to the process direction. The linear sensor array is configured to move along the sensor axis between a first position where the sensor array scans one portion of the imaging member and a second position where the sensor array scans another portion of the imaging member. If a fault is detected during calibration of the sensor array, the moveable sensor array may be used to determine whether the source of the fault rests with the imaging member or the sensor array. | 09-02-2010 |
20100219329 | PHOTOELECTRIC CONVERSION APPARATUS - Provided is a photoelectric conversion apparatus for detecting focus, which provides an increased number of ranging points while suppressing a chip-area increase. In a first mode, signals from a first line sensor L | 09-02-2010 |
20100224759 | SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MANUFACTURING METHOD OF THE SOLID-STATE IMAGING DEVICE - Disclosed herein is a solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements. | 09-09-2010 |
20100224760 | IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME, AND IMAGING METHOD - An imaging device includes: an imaging lens; a light receiving element including a light receiving portion configured to sense light transmitted through the imaging lens; and a high refractive index member packed between the imaging lens and the light receiving element and having a higher refractive index than air. | 09-09-2010 |
20100230577 | OPTICAL ANGLE OF ARRIVAL MEASUREMENT SYSTEM AND METHOD - An optical angle of arrival measurement system uses an optical element to form at least one narrow width line on a focal plane array (FPA) which is oblique with respect to the FPA's row and column axes and which traverses at least two rows or columns along its length; forming two perpendicular narrow width lines in a cross-pattern is preferred. Interpolating the position of the lines on the FPA provides coordinates that can be used to calculate the optical angle of arrival in accordance with θx=A(x)·tan | 09-16-2010 |
20100230578 | Solid-state image pickup apparatus, method of manufacturing the same, and image pickup apparatus - A solid-state image pickup apparatus includes a substrate, a wiring layer, and a waveguide. The substrate is provided with a pixel array portion constituted of a plurality of pixels each having a photoelectric converter that converts incident light into an electrical signal. The wiring layer includes a plurality of wirings and an insulating layer that covers the plurality of wirings that are laminated above the substrate. The waveguide guides light to each of the photoelectric converters of the plurality of pixels, the waveguide being formed in the wiring layer. The waveguide is formed to have a waveguide exit end from which light exits the waveguide so that a distance between the waveguide exit end and a surface of the photoelectric converter that receives light from the waveguide become shorter, as wavelengths of light guided by the waveguide are longer. | 09-16-2010 |
20100230579 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device having unit pixels arranged therein is provided, each unit pixel including: a transfer transistor configured to transfer a charge from a photoelectric conversion part to a floating diffusion part; a first reset transistor configured to reset the floating diffusion part; a charge storage capacitor; a charging transistor configured to charge the charge storage capacitor by a current corresponding to a charge in the floating diffusion part; a second reset transistor configured to reset the charge storage capacitor; an amplifying transistor configured to output an electric signal corresponding to a charge in the charge storage capacitor; and a selection transistor configured to selectively cause the amplifying transistor to be in an operation state. | 09-16-2010 |
20100230580 | SCANNING IMAGING DEVICE - A scanning imaging device has a spot light projecting section 101 that irradiates a first spot light for excitation and two second spot lights for focus detection onto a flow channel of a substrate 4 and an imaging section 102 for picking up an image of light emitted from a target of detection in the flow channel as it is excited by the first spot light. One of the second spot lights is reflected at the top surface of the flow channel and the other of the second spot lights is reflected at the bottom surface of the flow channel and a focus position adjustment mechanism for adjusting the focus position of each of the first and second spot lights in the depth direction of the flow channel such that the quantity of deviation of the focus positions of the first and second spot lights in the depth direction of the flow channel as determined by comparing the intensities of the one and the other of the second reflected lights reflected at the flow channel. | 09-16-2010 |
20100243864 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other. | 09-30-2010 |
20100252716 | Image sensor - An apparatus includes a three dimensional array of light receptors disposed within a substrate having a light receiving surface, where light receptors disposed closer to the light receiving surface are responsive to light having shorter wavelengths than light receptors disposed further from the light receiving surface, and where each light receptor is configured to output a binary value and to change state between an off-state and an on-state by the absorption of at least one photon. | 10-07-2010 |
20100252717 | ACTIVE-PIXEL SENSOR - The invention relates to an active-pixel sensor including an electromagnetic radiation detector, comprising a transistor amplifier, a series memory capacitor and a parallel load capacitor that are driven by the transistor amplifier. | 10-07-2010 |
20100252718 | 4T-4S STEP & REPEAT UNIT PIXEL AND IMAGE SENSOR INCLUDING THE UNIT PIXEL - Disclosed are a 4T-4S step & repeat unit pixel used in an image sensor and an image sensor having the same. The 4T-4S step & repeat unit pixel has four diffusion area patterns for photodiodes and three diffusion area patterns for an image signal conversion circuit. An aperture ratio of the image sensor increases in maximum by using four photodiodes arranged in a diagonal direction from each other and three diffusion area patterns arranged between the photodiodes near their edges. | 10-07-2010 |
20100258707 | PHOTODIODE ARRAY AND IMAGE PICKUP DEVICE USING THE SAME - A photodiode array includes a plurality of photodiodes arranged in a single semiconductor laminate including a first conductivity-type semiconductor layer and an absorption layer overlying the first conductivity-type semiconductor layer. The photodiode array also includes a functional portion among the photodiodes in a predetermined proportion. The functional portion acts as a monitor light receiving portion and/or a charge sweep portion. Each of the photodiodes and functional portion has a second conductivity-type region reaching the absorption layer from the surface of the semiconductor laminate and an electrode in ohmic contact with the second conductivity-type region. | 10-14-2010 |
20100258708 | METHOD AND SYSTEM FOR LIDAR USING QUANTUM PROPERTIES - A method and system for at least three dimensional imaging comprising a processor for processing information; at least one photon light source generating a beam of light; a modulator for modulating the light of the at least one photon light source; a plurality of first receivers operative to detect the influence of a subject on the beam; the plurality of first receivers being operatively connected to the processor and operating to transmit nonspatial information to the processor; the plurality of first receivers being spaced at known, different distances from the subject, whereby comparison of each of the outputs of the plurality of first receivers provides three dimensional information concerning the subject; the processor operating to correlate the outputs of the plurality of first receivers with spatial information derived from the modulated light at correlating intervals of time to create a three dimensional image of the subject. | 10-14-2010 |
20100264296 | Mixed analog and digital pixel for high dynamic range readout - An improved CMOS pixel with a combination of analog and digital readouts to provide a large pixel dynamic range without compromising low-light performance using a comparator to test the value of an accumulated charge at a series of exponentially increasing exposure times. The test is used to stop the integration of photocurrent once the accumulated analog voltage has reached a predetermined threshold. A one-bit output value of the test is read out of the pixel (digitally) at each of the exponentially increasing exposure periods. At the end of the integration period, the analog value stored on the integration capacitor is read out using conventional CMOS active pixel readout circuits. | 10-21-2010 |
20100264297 | PROXIMITY-TYPE IMAGING DEVICE AND IMAGING FILTER - A proximity-type imaging device includes an image sensor and an angle limiting filter. The image sensor performs photoelectric conversion for light transmitted from a subject using plural pixels, so as to capture the subject. The angle limiting filter includes a transparent glass substrate and a light shielding film which is formed with openings having one-to-one correspondence with the pixels and which is provided on the glass substrate. The angle limiting filter is disposed on the image sensor and limits an incidence angle of light incident to the image sensor to such an angle range that the light is incident from each opening to the corresponding pixel. The condition | 10-21-2010 |
20100264298 | PHOTO-ELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING SYSTEM - A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter. | 10-21-2010 |
20100270458 | LIQUID ELECTRICAL INTERCONNECT AND DEVICES USING SAME - Various embodiments include interconnects for semiconductor structures that can include a first conductive structure, a second conductive structure and a non-hardening liquid conductive material in contact with the first and second structure. Other embodiments include semiconductor components and imager devices using the interconnects. Further embodiments include methods of forming a semiconductor structure and focusing methods for an imager device. | 10-28-2010 |
20100270459 | Image Sensors with Photo-Current Mode and Solar Cell Operation - A photo-current mode of operation is disclosed for Full Frame CCDs, and Frame-Transfer CCDs, that is suitable for electrical power generation, when not in operation for image sensing, and for Interline-Transfer CCDs, that is suitable for image sensing, and also suitable electrical power generation, when not in operation for image sensing. Further, CMOS Image Sensors (CIS), including 1T Passive Pixels, or 1T Avalanche Photo-Diode Pixels, in which all pass transistors in the matrix are turned ON simultaneously thereby allowing the photo-current produced by each photo-diode in each pixel to flow towards the periphery where suitable circuitry will handle the photo-current for electrical power generation and/or storage. Also, CMOS Image Sensors (CIS), including any Active Pixel Sensor (APS) design, such as the 3T, or 3T Log, or 4T, or 5T, wherein each column-parallel VDD line connecting the Reset Transistors, or the Log Transistors, in a single column of pixels, to column-parallel circuitry at the edge of the pixel matrix, is connected through multiple pass transistors, to different column-parallel blocks of circuitry that are selected alternatively, and that include (1) a VDD voltage source for standard image sensing operation, (2) a block of circuitry suitable to handle photo-current signals for image sensing purposes, and (3) a block of circuitry that is suitable to handle photo-current for electrical power generation and/or storage purposes. | 10-28-2010 |
20100276572 | SEMICONDUCTOR IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array. | 11-04-2010 |
20100282944 | SOLID STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid state imaging device includes: a light receiving section performing photoelectric conversion; a transfer register formed in a semiconductor base; a transfer electrode formed of a semiconductor layer on the transfer register; a charge transfer section which formed of the transfer register and the transfer electrode and transferring a signal charge accumulated in the light receiving section; a bus line electrically connected to a portion of the transfer electrode to supply a driving pulse to the transfer electrode and formed of a metal layer; and a barrier metal layer formed near an interface between the transfer electrode and the bus line in a contact section that connects the transfer electrode and the bus line with each other and having a work function of the size between a work function of the semiconductor layer of the transfer electrode and a work function of the metal layer of the bus line. | 11-11-2010 |
20100282945 | TWO-DIMENSIONAL SOLID-STATE IMAGE CAPTURE DEVICE AND POLARIZATION-LIGHT DATA PROCESSING METHOD THEREFOR - A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane. | 11-11-2010 |
20100288910 | ADAPTIVE SPATIAL-SPECTRAL PROCESSING (ASSP) - A hyperspectral imaging sensor and an adaptive spatial spectral processing filter capable of detecting, identifying, and/or classifying targets having a spatial extent of one pixel or less includes a sensor that may be oversampled such that a pixel is spatially smaller than the optical blur or point spread function of the sensor. Adaptive spatial spectral processing may be performed on hyperspectral image data to detect targets having spectral features that are known a priori, and/or that are anomalous compared to nearby pixels. Further, the adaptive spatial spectral processing may recover target energy spread over multiple pixels and reduce background clutter to increase the signal-to-noise ratio. | 11-18-2010 |
20100288911 | SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE - A solid state imaging device that includes a semiconductor substrate having a plurality of photodiodes thereon and a first wiring portion, a second wiring portion and a third wiring portion, a first wiring layer over the semiconductor substrate and which includes a plurality of metal films and extends across all the wiring portions, and a second wiring layer over the first wiring layer and which extends across the first wiring portion and the second wiring portion. | 11-18-2010 |
20100294916 | METHOD AND SYSTEM FOR CREATING AN IMAGE USING THE QUANTUM PROPERTIES OF SOUND OR QUANTUM PARTICLES - A preferred embodiment comprises a method and system for generating an image of a subject or area comprising a processor; at least one incoherent light source which illuminates the subject or area; a first receiver for receiving light reflected from the subject or area operatively connected to the processor; a second receiver for receiving light from at least one incoherent light source operatively connected to the processor; the first receiver collecting the amount of light reflected from the subject and transmit a value at specific intervals of time; the second receiver comprising a second detector which detects and transmits spatial information regarding the incoherent light source independent of any data concerning the subject at specific intervals of time; wherein the processor correlates the value transmitted by the first receiver with the spatial information derived from the second receiver at correlating intervals of time to create an image of the subject or area. Alternatively, sound or quantum particles may replace the incoherent light source. | 11-25-2010 |
20100301193 | 3D ACTIVE IMAGING DEVICE - The invention relates to a device comprising a photosensitive element producing an electric charge as a function of the radiation incident thereon and a charge integrator connected to the photosensitive element and converting the charge to a voltage. According to the invention, the device comprises a comparator capable of comparing the voltage delivered by the integrator with a threshold voltage, and a memory unit for storing the instant when the voltage delivered by the integrator exceeds the threshold voltage. | 12-02-2010 |
20100308208 | DETECTING DEVICE AND SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a light receiving section having a plurality of threshold voltage modulation pixel circuits each configured including a MOS transistor having a gate electrode connected to a supply terminal of a gate voltage of a vertical scanning circuit, and a source electrode connected to one end of each capacitor of a line memory group via a switching element, and a photodiode having an anode connected to a back-gate electrode of the MOS transistor and a cathode connected to a drain electrode thereof, and a buffer circuit having an input terminal connected to a supply line of a control voltage of the control voltage supply means adapted to supply the vertical scanning circuit with the control voltage, and an output terminal connected to the other end of each capacitor, and having a signal transfer characteristic the same as that of the pixel circuit. | 12-09-2010 |
20100308209 | System for Charge-Domain Electron Subtraction in Demodulation Pixels and Method Therefor - A method and system enable the subtraction of charge carrier packages in the low-noise charge domain, which is particularly interesting for the operation of demodulation pixels when high background light signals are present. The method comprises the following steps: demodulation of an optical signal and integration of the photo-generated charge carriers; charge transfer to an external capacitance. The second step means a recombination of electrons and holes in the charge domain and an influencing of the opposite charge carriers on the second plate of the capacitance. This approach allows for low-noise subtraction of charge packages in the charge domain and, at the same time, for creating pixels with much higher fill factors because the capacitances can be optimized for storing just the differential parts, without the DC component. | 12-09-2010 |
20100314530 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING DEVICE - A photoelectric conversion device includes a pixel output line, a pixel which outputs a signal to the pixel output line, an amplifier unit which amplifies the signal output to the pixel output line, and a holding capacitor which holds the signal output from the amplifier unit. The photoelectric conversion device outputs a pixel signal based on the signal held by the holding capacitor. The amplifier unit includes a variable amplifier stage which amplifies a signal output to the pixel output line at a gain selected from a plurality of gains, and a buffer stage which amplifies the signal output from the variable amplifier stage, the amplified signal being held by the holding capacitor to hold the signal. | 12-16-2010 |
20100320364 | OPTICAL LENS SYSTEM AND METHOD FOR MICROFLUIDIC DEVICES - An apparatus for imaging one or more selected fluorescence indications from a microfluidic device. The apparatus includes an imaging path coupled to least one chamber in at least one microfluidic device. The imaging path provides for transmission of one or more fluorescent emission signals derived from one or more samples in the at least one chamber of the at least one microfluidic device. The chamber has a chamber size, the chamber size being characterized by an actual spatial dimension normal to the imaging path. The apparatus also includes an optical lens system coupled to the imaging path. The optical lens system is adapted to transmit the one or more fluorescent signals associated with the chamber. | 12-23-2010 |
20100327148 | CMOS Image Sensors Formed of Logic Bipolar Transistors - An integrated circuit structure includes an image sensor cell, which further includes a photo transistor configured to sense light and to generate a current from the light. | 12-30-2010 |
20100327149 | SOLID-STATE IMAGING APPARATUS - An apparatus includes a pixel region having disposed therein in a matrix form a plurality of conversion components, an amplifier transistor which amplifies a signal from the plurality of conversion components, a reset transistor which sets the potential of an input portion of the amplifier transistor to a reset potential, and a select transistor which is connected in series to the amplifier transistor and selects and reads the amplified signal, and well contact regions which are provided within the pixel region. Each of the well contact regions is neighboring to a drain region of the reset transistor, and the drain region of the reset transistor has a lower impurity concentration than the impurity concentration in the source and drain regions of the select transistor. | 12-30-2010 |
20110001036 | SYSTEM FOR IMAGING AN OBJECT | 01-06-2011 |
20110001037 | IMAGE SENSOR WITH INTEGRATION TIME COMPENSATION - A photosensitive apparatus including a plurality of photosensor chips and a first common line for applying a first external integration signal to each of the plurality of photosensor chips. Each photosensor chip includes a first set of photosensors having an edge pixel and an interior pixel and a control portion for accepting the first external integration signal, the first external integration signal causing an edge pixel integration signal and an interior pixel integration signal for the first set of photosensors. The control portion includes a first signal adjuster effectively altering the first external integration signal to cause the edge pixel integration signal and the interior pixel integration signal for the first set of photosensors. | 01-06-2011 |
20110001038 | IMAGE SENSOR DEVICE WITH SILICON MICROSTRUCTURES AND FABRICATION METHOD THEREOF - An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device. | 01-06-2011 |
20110001039 | A/D CONVERTER CIRCUIT AND SOLID-STATE IMAGING DEVICE - Provided are a solid-state imaging device and A/D converter circuit comprising: series-connected capacitative elements; a voltage comparator circuit comparing the output of the capacitative element C | 01-06-2011 |
20110006191 | IMAGE CAPTURE APPARATUS AND RADIATION IMAGE CAPTURE SYSTEM - An image capture apparatus includes a plurality of pixels, each including a plurality of thin film transistors (T | 01-13-2011 |
20110006192 | OPTICAL SENSOR ARRAY AND OPTICAL SENSOR CIRCUIT - Each optical sensor element includes an upper electrode, a lower electrode, and a light dependent variable resistance element formed of amorphous silicon. Each optical sensor pixel includes: a capacitive element between the lower electrode and a reference voltage line; a first transistor inputting a first power source voltage to a second electrode, connecting a first electrode to the lower electrode, and inputting a second clock to a control electrode; a second transistor inputting a second power source voltage to a second electrode, and connecting a control electrode to the lower electrode; and a third transistor connecting a second electrode to a first electrode of the second transistor, connecting a first electrode to the output line, and inputting a first clock to a control electrode. | 01-13-2011 |
20110006193 | ANTI-RESONANT REFLECTING OPTICAL WAVEGUIDE FOR IMAGER LIGHT PIPE - An anti-resonant reflecting optical waveguide structure for reducing optical crosstalk in an image sensor and method of forming the same. The method includes forming a trench within a plurality of material layers and over a photo-conversion device. The trench is vertically aligned with the photo-conversion device and is filled with materials of varying refractive indices to form an anti-resonant reflecting optical waveguide structure. The anti-resonant reflecting optical waveguide structure has a core and at least two cladding structures. The cladding structure in contact with the core has a refractive index that is higher than the refractive index of the core and the refractive index of the other cladding structure. The cladding structures act as Fabry-Perot cavities for light propagating in the transverse direction, such that light entering the anti-resonant reflecting optical waveguide structure remains confined to the core. This reduces the chance of photons impinging upon neighboring photo-conversion devices. | 01-13-2011 |
20110012011 | Color filter array, image sensor including the same, and electronic device including the color filter array - A color filter array is provided. The color filter array includes a plurality of basic filter blocks arranged in all directions. Each of the basic filter blocks include one or more color filters. The color filters include a first type color filter that passes through all light without filtering it or has a higher light transmittance than a second type color filter, a third type color filter, and a fourth type color filter. The second through fourth color filters being a red, green or blue filter. Accordingly, the color filter array increases sensitivity to incident light or increases brightness of outgoing light. | 01-20-2011 |
20110024605 | IMAGING APPARATUS AND DEVICE - An imaging apparatus capable of suppressing deterioration of image qualities and output properties is provided having one or more output circuits in series and a buffer circuit | 02-03-2011 |
20110024606 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device of an embodiment includes an imaging region, an output register, a corner register, a multiplication register, a first amplifier, a second amplifier, and a valve gate electrode. The output register is a transfer register that receives a charge transferred from the imaging region to transfer the charge. The output register is capable of selectively transferring a charge in one direction and in the other direction opposite to the one direction. The corner register transfers a charge transferred in one direction from the output register. The multiplication register receives a charge from the corner register and generates and transfers a multiplied charge. The first amplifier generates a signal based on a multiplied charge from the multiplication register. The second amplifier generates a signal based on a charge transferred in the other direction by the output register. The valve gate electrode is an electrode for preventing a transfer of a charge between the output register and the corner register. | 02-03-2011 |
20110024607 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device | 02-03-2011 |
20110031376 | SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - A solid-state image pickup element | 02-10-2011 |
20110031377 | SOLID-STATE IMAGING DEVICE - A multi-port solid-state imaging device of one embodiment includes an imaging region and a plurality of units. The imaging region contains a plurality of pixel columns. The units are arrayed in a direction in which the pixel columns are arrayed, and generate signals based on charges from the imaging region. Each unit has an output register, a multiplication register, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns. The multiplication register receives the charge from the output register to generate a multiplied charge. The amplifier generates a signal based on the multiplied charge from the multiplication register. The solid-state imaging device contains a region where the units are provided, and a first dummy region and a second dummy region located on both sides in the above-mentioned direction of the region. In each of the first dummy region and the second dummy region, a multiplication register and an amplifier are provided. | 02-10-2011 |
20110031378 | ELECTROMAGNETIC WAVE RECEPTION DEVICE, IMAGING DEVICE, AND ELECTROMAGNETIC WAVE RECEPTION METHOD - Provided is an electromagnetic wave reception device capable of being downsized and directly and simply (at least at a room temperature) detecting electromagnetic waves in a wider bandwidth including the terahertz range. The electromagnetic wave reception device that obtains charges according to an electric field of the electromagnetic waves incident on a semiconductor substrate includes: a high charge-density region provided on the semiconductor substrate and having a first charge density; a conductive region covering the high charge-density region via an insulation region; and a low charge-density region provided adjacent to the high charge-density region on the semiconductor substrate and having a second charge density lower than the first charge density, wherein the low charge-density region is connected to a charge detecting circuit that is not illustrated. | 02-10-2011 |
20110036969 | Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays - A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied. | 02-17-2011 |
20110042550 | Image Sensor Cell for Night Vision - An image sensor cell ( | 02-24-2011 |
20110042551 | IMAGE SENSOR - An image sensor includes a charge pump circuit supplying first to third signals having sequentially decreasing voltage levels, a reset transistor having a drain and a gate connected with the charge pump circuit to form a diode connection and receiving the first to third signals, a photodiode generating photocharges, a transfer transistor forming a series connection between the photodiode and the reset transistor, a floating diffusion region forming a parallel connection between the transfer transistor and the reset transistor and storing the photocharges, and a drive transistor connected with the floating diffusion region, the reset transistor, a power supply voltage terminal, and a unit pixel output terminal. A gate of the transfer transistor receives a turn-off voltage if the first or second signal is supplied, and receives a turn-off voltage or a turn-on voltage if the third signal is supplied. | 02-24-2011 |
20110042552 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state imaging device with an array arrangement of unit pixels including photoelectric conversion parts configured to generate signal charges by photoelectric conversion and a signal scanning circuit part, the signal scanning circuit part being provided on a second semiconductor layer different from a first semiconductor layer including the photoelectric conversion parts, the second semiconductor layer being stacked above the front side of the first semiconductor layer via an insulating film, and the first semiconductor layer being so configured that a pixel separation insulating film is buried in pixel boundary parts and read transistors configured to read signal charges generated by the photoelectric conversion parts are formed at the front side of the first semiconductor layer. | 02-24-2011 |
20110049330 | IMAGE SENSOR, METHOD AND DESIGN STRUCTURE INCLUDING NON-PLANAR REFLECTOR - A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate. | 03-03-2011 |
20110049331 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a semiconductor layer, implanting second-conductivity-type impurity ions into the semiconductor layer from the front side of the layer to form second-conductivity-type photoelectric conversion parts and forming a part where no ion has been implanted into a pixel separation region, forming at the surface of the semiconductor layer a signal scanning circuit for reading light signals obtained at the photoelectric conversion parts after removing the mask, and removing the semiconductor substrate and a buried insulating layer from the semiconductor layer after causing a support substrate to adhere to the front side of the semiconductor layer. | 03-03-2011 |
20110049332 | PHOTOELECTRIC CONVERSION DEVICE, IMAGE SENSING SYSTEM, AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device having a pixel array region in which a plurality of pixels each including a photoelectric converter are arrayed, and a peripheral region arranged around the pixel array region, the device comprising a multilayer wiring structure which is arranged on a semiconductor substrate, and includes wiring layers in the peripheral region more than wiring layers in the pixel array region, and a plurality of interlayer lenses which is arranged on the multilayer wiring structure in the pixel array region, wherein the plurality of interlayer lenses each includes a first insulator, and a second insulator arranged to cover the first insulator, and having a refractive index higher than the first insulator, and wherein the first insulator in each of the plurality of interlayer lenses, and an uppermost interlayer insulating film in the peripheral region in the multilayer wiring structure are made of an identical material. | 03-03-2011 |
20110049333 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a solid-state imaging device with a plurality of light-receiving layers for acquiring different color signals stacked one on top of another in the optical direction. Each of the light-receiving layers includes a photoelectric conversion part that receives light entering the back side of the layer and generates signal charges and a read transistor that is provided on the front side of the layer and reads the signal charges generated at the photoelectric conversion part. A semiconductor layer is stacked via an insulating film on the front side of the top layer of the plurality of light-receiving layers. At the semiconductor layer, there is provided a signal scanning circuit which processes a signal read by each of the read transistors and outputs a different color signal from each of the light-receiving layers to the outside. | 03-03-2011 |
20110062310 | SOLID-STATE IMAGING DEVICE, IMAGING DEVICE AND DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - It is possible to achieve compatibility between suppressing dark current caused by a leak phenomenon and ensuring element reliability in a CMOS solid-state imaging device. When a pixel using electrons as signal charge is driven, the negative voltage level of each of control signals adapted to pulse-drive transistors in the pixel is adjusted so that the longer the charge accumulation time, the higher the voltage level. Preferably, the negative voltage level is grounded (GND) when no signal charge is accumulated. The negative voltage level is increased only when the charge accumulation time is long, which is the case where dark current caused by a leak phenomenon becomes a problem. Therefore, it is possible to suppress stress on the pixels and the gate oxide film of their drive circuits and degradation of the transistor characteristics even if dark current is suppressed. | 03-17-2011 |
20110068251 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor includes: four or more photoelectric conversion units having spectral sensitivity characteristics different from one another; an amplifier unit disposed in correspondence to each group of photoelectric conversion units among N groups (N represents an integer less than a quantity of the four or more photoelectric conversion units and equal to or greater than one), the four or more photoelectric conversion units being divided into the N groups; and transfer units, each disposed in correspondence to one of the four or more photoelectric conversion units, which transfer a signal generated at the photoelectric conversion unit to the amplifier unit disposed for the group to which the photoelectric conversion unit belongs. | 03-24-2011 |
20110068252 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A photoelectric conversion apparatus of the present invention includes a first semiconductor region functioning as a barrier against signal charges between a first and a second photoelectric conversion element, and a second semiconductor region that has a width narrower than that of the first semiconductor region and functions as a barrier against signal charges between a first and the third photoelectric conversion element. A region with a low barrier is provided at least a part between the first and the second photoelectric conversion element. | 03-24-2011 |
20110068253 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type. | 03-24-2011 |
20110068254 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element is provided and includes a photoelectric conversion portion. The photoelectric conversion portion includes: a pair of electrodes; and a photoelectric conversion layer between the pair of electrodes, and at least part of the photoelectric conversion layer includes a mixed layer of a p-type organic semiconductor and a fullerene, and a mixing ratio of the fullerene to the p-type organic semiconductor in terms of thickness ratio is less than 1:1. | 03-24-2011 |
20110073750 | IMAGE PICKUP APPARATUS AND RADIATION IMAGE PICKUP SYSTEM - An image pickup apparatus includes an insulating substrate, and a plurality of pixels each including a conversion element configured to convert incident light or radiation into a charge and also including a switch element configured to transfer an electric signal corresponding to the charge generated by the conversion element. Gate wiring is configured to drive the switch element to transfer the electric signal through signal wiring. The plurality of pixels, the signal wiring, and the gate wiring are disposed on one surface of the insulating substrate. The insulating substrate has vias that provide electrical connections between the one surface and an opposite surface of the insulating substrate. | 03-31-2011 |
20110073751 | SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, AND LENS ARRAY - A solid-state imaging device includes: multiple micro lenses, which are disposed in each of a first direction and a second direction orthogonal to the first direction, focus the incident light into the light-receiving surface; with the multiple micro lenses of which the planar shape is a shape including a portion divided by a side extending in the first direction and a side extending in the second direction being disposed arrayed mutually adjacent to each of the first direction and the second direction; and with the multiple micro lenses being formed so that the depth of a groove between micro lenses arrayed in a third direction is deeper than the depth of a groove between micro lenses arrayed in the first direction, and also the curvature of the lens surface in the third direction is higher than the curvature of the lens surface in the first direction. | 03-31-2011 |
20110079704 | NANO WIRE BASED PASSIVE PIXEL IMAGE SENSOR - An imaging device including a plurality of photo-sensitive elements suitable for imaging small objects less than 500 nm in size. Each of the photo-sentive elements forms a passive pixel which comprises at least one nanowire structured photodetector and a switch transistor. The nanowire structured photodetector is configured to receive the photons and store the photo generated charges and behave as a waveguide. The switch transistor is formed either in the substrate or at the same body of the nanowire and is configured to allow photo-genereated charges in the nanowire to accumulate when off and to drain from the nanowire when on. The pixel array is configured to allow high resolution imaging by arranging in a penny round pattern. | 04-07-2011 |
20110079705 | Signal Noise Reduction for Imaging in Biological Analysis - A system and method for characterizing contributions to signal noise associated with charge-coupled devices adapted for use in biological analysis. Dark current contribution, readout offset contribution, photo response non-uniformity, and spurious charge contribution can be determined by the methods of the present teachings and used for signal correction by systems of the present teachings. | 04-07-2011 |
20110079706 | QUANTUM TUNNELING PHOTODETECTOR ARRAY - A quantum tunneling photodetector array and a method of generating an image. The photodetector array comprises an array of pairs of opposing first and second electrodes; a photo-sensitive insulating material disposed between the opposing first and second electrodes of the respective pairs; an electrical circuit for detecting photo-assisted quantum tunneling currents between the opposing first and second electrode of the respective pairs. | 04-07-2011 |
20110079707 | IMAGE PICKUP ELEMENT PERFORMING IMAGE DETECTION OF HIGH RESOLUTION AND HIGH IMAGE QUALITY AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts. | 04-07-2011 |
20110084196 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes an effective pixel region for outputting a signal according to light, and an optical black pixel region for outputting a reference signal, wherein, in the optical black pixel region, a plug is arranged in an insulating film, and a light shielding film is arranged above the plug and is connected to the plug, such that an upper surface of the plug and an upper surface of the insulating film form the same plane, and wherein, above or below the light shielding film, a titanium film of thickness 5 to 15 nm is arranged. | 04-14-2011 |
20110084197 | Solid-State Image Sensor - A pixel output line is provided for each of the pixels two-dimensionally arrayed in a pixel area. The pixel output lines are extended to a memory area, and a memory unit is connected to each of those lines. The memory unit includes a writing-side transistor, a reading-side transistor and a plurality of memory sections for holding signals for 104 image frames. A photocharge storage operation is simultaneously performed at all the pixels, and the thereby produced signals are outputted to the pixel output lines. In the memory unit, with the writing-side transistor in the ON state, the sampling transistor of a different memory section is sequentially turned on for each exposure cycle so as to sequentially hold a signal in the capacitor of each memory section. After a burst imaging operation is completed, all the pixel signals are sequentially read. Unlike CCDs, the present device does not simultaneously drive all gate loads, so that it can be driven at high speeds with low power consumption. Thus, the burst imaging can be performed at higher speeds than ever before. | 04-14-2011 |
20110089311 | TRENCH TRANSFER GATE FOR INCREASED PIXEL FILL FACTOR - An image sensor provides high scalability and reduced image lag. The sensor includes a first imaging pixel that has a first photodiode region formed in a substrate of the image sensor. The sensor also includes a first vertical transfer transistor coupled to the first photodiode region. The first vertical transfer transistor can be used to establish an active channel. The active channel typically extends along the length of the first vertical transfer transistor and couples the first photodiode region to a floating diffusion. | 04-21-2011 |
20110089312 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-21-2011 |
20110089313 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-21-2011 |
20110095168 | IMAGE READER AND IMAGE FORMING APPARATUS - An image reader includes: a rectangular substrate; a photoelectric conversion element that is mounted on one surface of the substrate; a connector that is mounted on the other surface of the substrate so as to be closer to one end face of the substrate than a position on the substrate where the photoelectric conversion element is mounted, and is connected to a signal line; a support member; and a restricting member that is provided on the substrate so as to be closer to the one end face of the substrate in the longitudinal direction than the position where the substrate is supported by the support member, when another connector is fitted to at least the connector, the restricting member coming into contact with the one surface of the substrate and restricting the deformation of the substrate in a direction in which the another connector is fitted. | 04-28-2011 |
20110095169 | IMAGING APPARATUS, IMAGING SYSTEM, METHOD OF CONTROLLING THE APPARATUS AND THE SYSTEM, AND PROGRAM - An imaging apparatus includes a conversion unit including a plurality of pixels arranged in a matrix, each pixel including a conversion element, an output switch element, and an initialization switch element; an output drive circuit controls an output operation; an initialization drive circuit controls an initialization operation; and a readout circuit performs a signal sample-and-hold operation and a reset operation. A control unit performs termination of the output operation of a certain row and start of the output operation of another row after the termination of the reset operation, the start of the signal sample-and-hold operation after the termination of the output operation of the certain row and the start of the output operation of the other row, the start of the reset operation and the initialization operation after the termination of the signal sample-and-hold operation, and the termination of the reset operation after the termination of the initialization operation. | 04-28-2011 |
20110101204 | IMAGE SENSOR - The invention relates to an image sensor, in particular to a CMOS sensor, having a plurality of light sensitive pixels arranged in rows and columns for the generation of output signals proportional to the exposure, wherein column lines are associated with the columns to supply the output signals to at least one column amplifier for amplification, wherein the at least one column amplifier cooperates with the column lines such that the amplification of the respective output signal depends on the capacitance of the respective column line. | 05-05-2011 |
20110101205 | SYSTEMS AND METHODS FOR COLOR BINNING - In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit. | 05-05-2011 |
20110101206 | Device and Method for the Demodulation of Modulated Electromagnetic Wave Fields - A new pixel in semiconductor technology comprises a photo-sensitive detection region ( | 05-05-2011 |
20110108703 | SEGMENTED GUARD STRIP - A semiconductor detector array including a substrate formed of a semiconductor material and defining a detector array surface including first and second opposite facing surfaces and at least one side wall, electrodes operative as anodes and cathodes of the detector array, formed on the respective first and second opposite facing surfaces, electrical insulation formed along at least part of the at least one side wall and at least one segmented electrical conductor formed over at least part of the electrical insulation along the at least part of the at least one side wall. | 05-12-2011 |
20110108704 | Image sensors and methods of operating the same - Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively. | 05-12-2011 |
20110108705 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD AND DESIGNING METHOD THEREOF, AND ELECTRONIC DEVICE - A solid-state imaging device includes: a semiconductor substrate that includes a photodiode separately provided for each of pixels disposed in a matrix on a light-receiving surface; a first insulating film formed on the semiconductor substrate so as to cover multilayer wiring formed on and in contact with the semiconductor substrate, wherein the first insulating film is formed using material of a first refractive index lower than a refractive index of the semiconductor substrate for at least bottom surface and top surface portions of the first insulating film; a second insulating film of a second refractive index higher than the first refractive index formed on the first insulating film; a third insulating film of a third refractive index higher than the second refractive index formed on the second insulating film; and a color filter formed on the third insulating film in a corresponding manner with each pixel so as to transmit light in a wavelength region of red, green, or blue. | 05-12-2011 |
20110108706 | SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×10 | 05-12-2011 |
20110108707 | ACOUSTIC ASSISTED PHASE CONJUGATE OPTICAL TOMOGRAPHY - A light microscope for imaging a sample containing one or more fluorescent agents, comprising a source for generating acoustic waves that are focused at a focus in the sample, wherein the acoustic waves frequency shift a frequency of light passing through the focus, thereby creating a frequency shifted light beam; at least one spatial light modulator (SLM) positioned to illuminate the sample with an output beam that is an optical phase conjugate of the frequency shifted light beam, wherein the output beam is a reflection of a first reference beam off one or more pixels of the SLM, and the pixels are for modulating the first reference beam to create the output beam; and a detector positioned to detect fluorescence generated by the output beam exciting the fluorescent agents at the focus in the sample, thereby imaging the sample. | 05-12-2011 |
20110108708 | DIGITAL CAMERA WITH MULTIPLE PIPELINE SIGNAL PROCESSORS - A method includes sampling a first intensity of light with a first array of photo detectors of a digital camera. A second intensity of light is sampled with a second array of photo detectors of the digital camera. A first channel processor coupled to the first array of photo detectors generates a first image using first array data which is representative of the first intensity of light sampled by the first array of photo detectors. A second channel processor coupled to the second array of photo detectors generates a second image using second array data which is representative of the second intensity of light sampled by the second array of photo detectors. The first array of photo detectors, the second array of photo detectors, the first channel processor, and the second channel processor are integrated on or in a semiconductor substrate. | 05-12-2011 |
20110114821 | 3D CCD-Style Imaging Sensor with Rolling Readout - The presented readout structure provides charge transport based readout of a photosensitive device with a minimum number of transport gates. The structure uses the given charge storage buckets of the photosensitive device, separated by a minimum sized barrier-gate, to transport the charge out of the pixel field. This new readout schema allows for a fast readout speed based on a 2 phase transport chain and increases the pixel's optical fill factor by significantly reducing the transport gate size compared to state-of-the-art pixels using a 3 or 4 phase CCD readout chain. This readout structure can be exploited for standard photo-detecting elements such as e.g. pinned photo-diodes or any enhanced pixel structure that has additional intelligence incorporated as well. Typical applications are 2D- or 3D-imaging. The process used for manufacturing a sensor with such a readout scheme requires preferably charge transport mechanisms like charge-coupled gate devices as well as the possibility of integrating circuitries of high density. The exploitation of such a combination of process-related features results in a new sensor readout technique that allows for optimizing the pixel's dynamic range and optical fill factor. | 05-19-2011 |
20110114822 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING THE APPARATUS - A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line. | 05-19-2011 |
20110114823 | IMAGING DEVICE AND METHOD FOR HIGH-SENSITIVITY OPTICAL SCANNING AND INTEGRATED CIRCUIT THEREFOR - An inspection system includes a CMOS integrated circuit having integrally formed thereon an at least two dimensional array of photosensors and providing an inspection output representing an object to be inspected. A defect analyzer is operative to receive the inspection output and to provide a defect report. | 05-19-2011 |
20110121161 | COUNTER CIRCUITS, ANALOG TO DIGITAL CONVERTERS, IMAGE SENSORS AND DIGITAL IMAGING SYSTEMS INCLUDING THE SAME - A counter circuit for an analog to digital converter includes: a plurality of counter stages configured to obtain an integer multiple of a digital gain for the analog to digital converter by bypassing at least one of the plurality of counter stages. An analog-to-digital converter includes at least one counter circuit, and an image sensor includes the analog-to-digital converter, which includes the counter circuit. | 05-26-2011 |
20110121162 | SOLID-STATE IMAGING DEVICE AND DIFFERENTIAL CIRCUIT - A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge. | 05-26-2011 |
20110127408 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a pixel having a photodiode and a pixel transistor; a first isolation region using a semiconductor region containing impurities formed between neighboring photodiodes; and a second isolation region using an semiconductor region containing impurities formed between the photodiode and the pixel transistor, wherein an impurity concentration of the first isolation region is different from an impurity concentration of the second isolation region. | 06-02-2011 |
20110127409 | SOLID-STATE IMAGE PICKUP DEVICE, A METHOD OF DRIVING THE SAME, A SIGNAL PROCESSING METHOD FOR THE SAME, AND IMAGE PICKUP APPARATUS - A solid-state image pickup device including: a pixel array portion; a differential circuit; a reset voltage supplying section; and a common phase feedback circuit. | 06-02-2011 |
20110133056 | APPARATUS, SYSTEM, AND METHOD FOR EMISSION FILTER - An apparatus, system, and method for emission filter. A filter apparatus is presented. In one embodiment, the filter apparatus may be adapted for fluorescence spectroscopy. In a particular embodiment, the filter apparatus comprises a solution. The solution may include a polar protic solvent and an absorbing specimen. Additionally, the filter apparatus may include an adhesive to conform the solution into a solid filter. | 06-09-2011 |
20110133057 | ANTI-ECLIPSE CIRCUITRY WITH TRACKING OF FLOATING DIFFUSION RESET LEVEL - An anti-eclipse circuit for an imager is formed from pixel circuitry over the same semiconductor substrate as the imaging pixels. More specifically, two adjacent pixel circuits are modified to form an amplifier. One input of the amplifier is adapted to receive a reset signal from one of the pixel circuits while another input is adapted to be set at a predetermined offset voltage from the output of the amplifier. The amplifier is preferably a unity gain amplifier, so that the output of the amplifier set to a voltage level equal to the predetermined offset from the voltage level of the reset signal. Accordingly, the anti-eclipse circuit outputs a reference voltage at predetermined level from the reset voltage of a pixel and does not need to be calibrated for fabrication related variances in reset voltages. | 06-09-2011 |
20110139962 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device, including: a plurality of pixels each composed of a photoelectric conversion element formed in a semiconductor substrate for generating and accumulating signal electric charges corresponding to a light quantity of incident light, and an electric charge reading portion formed on a front surface side of the semiconductor substrate for reading out the signal electric charges generated and accumulated in the photoelectric conversion element; a wiring for a substrate potential formed on a back surface side, becoming a light receiving surface, of the semiconductor substrate for supplying a desired voltage to the semiconductor substrate; and a back surface side contact portion through which the wiring for a substrate potential and the semiconductor substrate are electrically connected to each other. | 06-16-2011 |
20110139963 | IMAGE SENSORS, METHODS, AND PIXELS WITH STORAGE AND TRANSFER GATES - An image sensor includes a pixel array with a plurality of pixels. A pixel includes a photodiode, a first transfer gate, a storage gate, and a second transfer gate. The first transfer gate is controllable to transfer charge from the photodiode to under the storage gate. The storage gate is connected to a readout circuit to allow the readout circuit to read out a voltage level of a potential at the storage gate. The second transfer gate is controllable to transfer charge from under the storage gate. A method includes controlling the first transfer gate to transfer charge from the photodiode to under the storage gate, reading out a voltage level of a potential at the storage gate using the readout circuit that is connected to the storage gate, and controlling the second transfer gate to drain charge from under the storage gate. | 06-16-2011 |
20110147567 | SiPM Photosensor With Early Signal Digitization - The present invention is a Silicon PhotoMulitplier comprising a plurality of photon detection cell clusters each comprising a plurality of avalanche photodiodes connected in parallel, so that the output of each avalanche photodiode is summed together and applied to a cell cluster output. Each of the plurality of cell cluster outputs is connected to one of a plurality of cluster readout circuits, each of which includes an analog to digital converter that converts an analog representation of the total energy received by a photon detection cell cluster to a digital energy signal. A SiPM Pixel reader circuit is connected to the plurality of cluster readout circuits and configured to generate an overall pixel output by digital processing the plurality of digital energy signals received from the plurality of photon detection cell clusters by way of the plurality of cluster readout circuits. The SIPM pixel reader circuit also receives digital signals representative of timing triggers and the total energy received by a specific photon detection cell cluster and generates an overall SiPM energy signal and overall timing trigger in response to the signals received from the plurality of cluster readout circuits. | 06-23-2011 |
20110155889 | CONTACT IMAGE SENSING MODULE - A contact image sensor module includes an image sensor, a lens unit arranged over the image sensor, a glass plate arranged over the lens unit, and a light source. The lens unit includes a plurality of rod lenses. The glass plate is wedge-shaped and elongated. The glass plate includes a first light interface being rectangular and elongated, and a second light interface and an incident face respectively extending from two opposite longer sides of the first light interface. The incident face faces the light source. The first light interface is substantially perpendicular to the rod lenses. The second light interface is below the first light interface and faces top sides of the rod lenses. Light of the light source is first directed by the glass plate to the document, then reflected by the document to the lens unit via the glass plate and finally reaching the image sensor. | 06-30-2011 |
20110155890 | SOLID-STATE IMAGING DEVICE - According to one embodiments, a pixel array unit in which pixels PC are arranged in a matrix manner, a sample-and-hold signal conversion circuit that detects a signal component of each of the pixels PC in a CDS, and a timing control circuit that controls to sample a reference level of an analog CDS after a reference level of a digital CDS is converted into a digital value are included. | 06-30-2011 |
20110155891 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS - A semiconductor device includes: a photoelectric conversion layer; a continuous or discontinuous cylindrical metal microstructure embedded in the photoelectric conversion layer; and a dielectric film with which an inner side surface and an outer side surface of the metal microstructure are coated. | 06-30-2011 |
20110155892 | ADJUSTABLE CMOS SENSOR ARRAY - In one aspect, the present invention provides an active pixel sensor array with optimized matching between pixels and strength and frequency of incoming signals such as photons absorbed. The array comprises multiple pixels of individual geometry corresponds to spatial location. Each pixel full-well is adjustable via modifiable pixel conversion gain while maintaining pixel linearity. Furthermore each pixel internally stores multiple of extremely high frequency samples. Variable pixel geometry per row is very advantageous for Echelle spectrograph, where pixel heights are aligned with the spectrograph “order separator” where the resolution changes. In combination with variable geometry, externally adjustable full-well provides for superior spectral line separation in spectroscopy applications. In one embodiment multiple time windows with intermittent resets are stored within each pixel. This feature allows for the detection of extreme high frequency consecutive events without saturation such as may be the case with LIBS (Laser Induced Breakdown Spectroscopy). | 06-30-2011 |
20110155893 | SOLID-STATE IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer. | 06-30-2011 |
20110163223 | ACTIVE PIXEL SENSOR HAVING TWO WAFERS - A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer. | 07-07-2011 |
20110163224 | ADJUSTABLE CMOS SENSOR ARRAY - A column buffer for use with a pixel cell array includes an amplifier coupled to three read-out circuits in parallel providing a signal corresponding to accumulated photon-generated charge in a pixel cell plus noise, a reset level plus noise, and a pedestal level, respectively. These three signals are used to generate an ultra-low noise signal D | 07-07-2011 |
20110168871 | OPTICAL DETECTOR FOR A PARTICLE SORTING SYSTEM - An optical system for acquiring fast spectra from spatially channel arrays includes a light source for producing a light beam that passes through the microfluidic chip or the channel to be monitored, one or more lenses or optical fibers for capturing the light from the light source after interaction with the particles or chemicals in the microfluidic channels, and one or more detectors. The detectors, which may include light amplifying elements, detect each light signal and transducer the light signal into an electronic signal. The electronic signals, each representing the intensity of an optical signal, pass from each detector to an electronic data acquisition system for analysis. The light amplifying element or elements may comprise an array of phototubes, a multianode phototube, or a multichannel plate based image intensifier coupled to an array of photodiode detectors. | 07-14-2011 |
20110168872 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to the fifth semiconductor region. | 07-14-2011 |
20110168873 | PIXEL OF IMAGE SENSOR HAVING ELECTRICALLY CONTROLLABLE PINNING LAYER - Disclosed are a pinned photodiode having and electrically controllable pinning layer and an image sensor including the pinned photodiode. A predetermined voltage is applied to the pinning layer for the depletion duration of the photodiode in the image sensor, so that stable surface pinning is acquired and the uniform surface pinning is achieved between pixels. | 07-14-2011 |
20110174957 | RADIATION DETECTION ELEMENT - The present invention provides a radiation detection element that may suppress variation in wiring load, and that may increase the arrangement pitch of connecting portions connected to external circuits. Namely, plural pixels are disposed in an inclined matrix within a detection region, and a signal line is disposed for every two pixel lines in a vertical direction. | 07-21-2011 |
20110174958 | PHOTOSENSITIVE SENSOR CELL, DETECTOR UNIT, AND IMAGING MEANS - A photosensitive sensor cell includes a photosensitive element with a detection surface for receiving light. The element is manufactured from a material of which at least one electrically measurable quantity is changeable under the influence of light. The element further includes electrodes for making the quantity measurable such that a property of the light can be determined. The element has a pointed shape, which renders a robust decorrelation possible so as to obtain super-resolution. | 07-21-2011 |
20110180688 | PHOTOELECTRIC CONVERTER AND PROCESS FOR PRODUCING THE SAME AND SOLID STATE IMAGING DEVICE - A photoelectric converter includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high-resistivity layer in its surface; a transparent electrode layer disposed on the compound semiconductor thin film; an interlayer insulating layer; a zinc-oxide-based compound semiconductor thin film; and electrodes. With application of a reverse bias voltage between the transparent electrode layer and the lower electrode layer, and application of a bias voltage between the electrodes, the photoelectric converter photoelectrically converts ultraviolet region light. Thus, the photoelectric converter achieves photoelectric conversion of light in a wider region. Such a photoelectric converter and a process for producing the same, and a solid state imaging device to which the photoelectric converter is applied are provided. | 07-28-2011 |
20110180689 | COMPACT IMAGE SENSOR ARRANGEMENT - An image sensor having a number of pixel zones delimited by isolation trenches, each pixel zone including a photodiode; a transfer gate associated with each of the pixel zones and arranged to transfer charge from the photodiode to a sensing node; and a read circuit for reading a voltage at one of the sensing nodes, the read circuitry including a number of transistors of which at least one is positioned at least partially over a pixel zone of the pixel zones. | 07-28-2011 |
20110180690 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate. | 07-28-2011 |
20110186713 | DATA PROCESSING METHOD AND SOLID-STATE IMAGE PICKUP DEVICE - A data processing method may include counting one of a plurality of clock signals with a first mode, counting clock signals based on a predetermined number of the plurality of clock signals with the first mode, to output a first clock signal every time a counter value becomes a first predetermined value, counting the first clock signal with the first mode, counting one of the clock signals with a second mode while the counted value is considered as a first initial value, counting clock signals based on the predetermined number of the plurality of clock signals with the second mode, to output a second clock signal every time the counter value becomes a second predetermined value while the counted value is considered as a second initial value, counting the second clock signal with the second mode, and outputting the counter values with the second mode as difference data between a first data signal and a second data signal. | 08-04-2011 |
20110192957 | System and Method for Extending Dynamic Range for a Detector - A system and method for measuring signals having a wide range of intensity components using detectors adapted for use in biological analysis devices. In certain biological analysis applications, signals emitted by a sample may have intensity components that vary over several orders of magnitude. Measurement of such a signal may yield an acceptable quality for one intensity component at the expense of another component. For example, a detector configured to measure a relatively weak intensity component may cause it to overflow when subjected to a relatively strong intensity component. The detector can be adapted to be operated at different configurations to allow measurements of different components of the signal, and the results can be combined to yield an accurate representation of the signal. | 08-11-2011 |
20110198481 | Image sensor and operating method - An image sensor and a method of operating the image sensor are provided. At least one pixel of the image sensor includes a detection portion including a plurality of doping areas having different pinning voltages, and a demodulation portion to receive an electron from the detection portion, and to demodulate the received electron. | 08-18-2011 |
20110198482 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE - A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device ( | 08-18-2011 |
20110204206 | Rain sensor - There is provided a rain sensor capable of adequately detecting raindrops in a captured image. The rain sensor includes: a surface light source | 08-25-2011 |
20110204207 | PHOTODETECTOR CIRCUIT - A photodetector circuit is provided that includes: a first wiring connected to an input terminal; a second wiring connected to an output terminal; and first and second photosensors each including a first terminal connected to the first wiring and a second terminal connected to the second wiring, wherein the first wiring and the second wiring are arranged in parallel, and the sum of resistance values of a first path from the input terminal to the output terminal via the first wiring, the first photosensor, and the second wiring is identical to the sum of resistance values of a second path from the input terminal to the output terminal via the first wiring, the second photosensor, and the second wiring. | 08-25-2011 |
20110204208 | PHOTOELECTRIC CONVERSION DEVICE, IMAGING DEVICE, METHOD FOR MANUFACTURING IMAGING DEVICE, AND IMAGING APPARATUS - An organic photoelectric conversion device having: a first electrode; a second electrode opposing to the first electrode; and an organic material-containing photoelectric conversion layer provided between the first electrode and the second electrode, wherein an electron spin number of the photoelectric conversion layer is not more than 1.0×10 | 08-25-2011 |
20110204209 | LOW PROFILE CAMERA AND VISION SENSOR - A monolithic camera configured for a predetermined environment can be made in the following manner. The camera is formed from an integrated circuit that has a light sensitive portion that can sense light from the predetermined environment. Two or more opaque masks are disposed within the oxide layer above the light sensitive pixel array of the image sensor. These opaque masks may be formed from the “metal” layers typically used for signal routing in image sensor integrated circuits. The opaque masks contain arrays of holes arranged so that for each pixel there is a clear path for light to reach the pixel from a corresponding part of the visual field. Each pixel is associated with a different set of holes that allows a different region of the predetermined environment to be observed. | 08-25-2011 |
20110204210 | Single-Photon Avalanche Detector-Based Focal Plane Array - An imaging sensor having sensitivity at the single-photon level is disclosed. The sensor comprises an array of pixels, each of which comprises a negative-feedback avalanche diode and a read-out circuit that includes a counter. The counter keeps track of the number of photons detected by the diode during a given time period. | 08-25-2011 |
20110215222 | METHOD AND APPARATUS FOR BACKSIDE ILLUMINATED IMAGE SENSORS USING CAPACITIVELY COUPLED READOUT INTEGRATED CIRCUITS - The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable integrator that is reset multiple times over a single exposure time and provides an analog representation of the incident photons during the last integration cycle, and (iii) a comparator that monitors the integrator output and generates a reset pulse when the integrator reaches a built-in threshold value. The memory circuit includes: (i) a receiver circuit that detects the output of the digital driver in the front-end readout circuit via capacitive coupling and generates a digital voltage pulse for each received signal, and (ii) a digital counting memory to count the received pulses to provide a coarse digital representation of how many times the integrator is reset. | 09-08-2011 |
20110215223 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens. | 09-08-2011 |
20110220777 | Detection module - We describe a detection module useful with an apparatus and/or system for conducting luminescence assays. | 09-15-2011 |
20110220778 | SOLID-STATE IMAGING DEVICE - According to one embodiments, a transparent reference electrode is provided to be sandwiched between a red-detecting photoelectric conversion film and a green-detecting photoelectric conversion film, a first transparent driving electrode is provided to face the transparent reference electrode with the green-detecting photoelectric conversion film therebetween, a second transparent driving electrode is provided to face the transparent reference electrode with the red-detecting photoelectric conversion film therebetween, and a blue-detecting photoelectric conversion film is provided below the red-detecting photoelectric conversion film and performs blue detection. | 09-15-2011 |
20110226934 | IMAGE SENSORS EMPLOYING SENSITIZED SEMICONDUCTOR DIODES - In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region. | 09-22-2011 |
20110226935 | INFORMATION-ACQUISITION DEVICE AND OPTICAL COMMUNICATION SYSTEM - At least one cell implementing a sensor array embraces a photoelectric-conversion accumulation element configured to generate and accumulate signal charges, a potential detection circuit configured to detect the signal charges generated by the photoelectric-conversion accumulation element as a potential change, and an amplification circuit configured to amplify the potential change and to transmit to an output-signal line. The photoelectric-conversion accumulation element and the potential detection circuit are connected in series between a first potential terminal and a second potential terminal, and the potential detection circuit has an insulated-gate transistor, which detects the potential change in a weak inversion state, in a period when an optical-communication signal is received. | 09-22-2011 |
20110233381 | Photoelectric conversion device - An electric conversion device may include A/D converters each of which includes a pulse delay circuit and an encoder, the pulse delay circuit including delay units each of which delaying a pulse signal with a delay time based on the difference between a voltage of a pixel signal and a reference voltage, the delay units being connected so that the pulse signal can circulate through the delay units, the encoder outputting a digital value based on the number of the delay units that the pulse signal passes through within a predetermined period of time. The encoder may include a latch circuit that includes latch units storing delay information, the delay information being output when the pulse signal passes through each of the delay units, an encoder unit that outputs the digital value based on the delay information, and a counter unit that counts the number of circulations. | 09-29-2011 |
20110233382 | Method and Apparatus for High Resolution Photon Detection Based on Extraordinary Optoconductance (EOC) Effects - The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (EOC) phenomenon, and preferably an inverse EOC (I-EOC) phenomenon, in a metal-semiconductor hybrid (MSH) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors. In experimentation with an exemplary embodiment, ultrahigh spatial resolution 4-point optoconductance measurements using Helium-Neon laser radiation reveal a strikingly large optoconductance property, an observed maximum measurement of 9460% EOC, for a 250 nm device. Such an exemplary EOC device also demonstrates specific detectivity higher than 5.06×10 | 09-29-2011 |
20110233383 | IMAGING APPARATUS - An imaging apparatus is realized which enables a thin finger vein authentication apparatus having a thickness installable in a portable information device. A light beam emitted from an object passes through a visible light cut-off filter | 09-29-2011 |
20110240832 | CYCLIC A/D CONVERTER, IMAGE SENSOR DEVICE, AND METHOD FOR GENERATING DIGITAL SIGNAL FROM ANALOG SIGNAL - A cyclic A/D converter which can reduce the number of reference voltages for D/A conversion is provided. The cyclic A/D converter ( | 10-06-2011 |
20110248145 | SOLID-STATE IMAGING DEVICE, DIGITAL CAMERA, AND ANALOG-TO-DIGITAL CONVERSION METHOD - A solid-state imaging device according to the present invention includes: a pixel portion including a plurality of unit pixels arranged in a matrix; a column signal line provided per column in the pixel portion; an AD conversion unit which converts a voltage of a pixel signal into a digital value by performing counting until a reference signal reaches the voltage of the pixel signal from the column signal line; and a clock signal generating unit which generates, to the AD conversion unit, a counter clock for the counting, and the clock signal generating unit switches, during a period of the AD conversion, a frequency of the counter clock from a first frequency to a second frequency that is different from the first frequency. | 10-13-2011 |
20110248146 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA - A solid-state image pickup device including a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide. | 10-13-2011 |
20110248147 | DUAL CONVERSION GAIN GATE AND CAPACITOR COMBINATION - An imaging device comprising a plurality of photosensors, a shared diffusion region for receiving charge generated by the photosensors, and a dual conversion gain element that can be selectively coupled to the shared diffusion region to increase a conversion gain of the shared diffusion region. A method of operating such an imaging device is also described, comprising resetting a shared diffusion region, sampling a reset voltage level at the shared diffusion region, transferring charge accumulated in one of a plurality of photosensors to the shared diffusion region, sampling a pixel signal voltage level at the shared diffusion region, and activating a dual conversion gain element to increase a conversion gain of the shared diffusion region. | 10-13-2011 |
20110248148 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREFOR - A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential. | 10-13-2011 |
20110253882 | SOLID STATE IMAGING DEVICE - A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end. | 10-20-2011 |
20110260035 | IMAGE ACQUISITION SYSTEM AND METHOD FOR THE MANUFACTURE THEREOF - An image acquisition system, in particular for automotive applications, includes: a substrate; an image sensor mounted on the substrate and contacted via contact points; an optically transparent sealing compound that covers the image sensor, the contact points, and a portion of the upper substrate side; an optical device being arranged or secured in or on the sealing compound. The optical device can be placed into the sealing compound after shaping of the sealing compound or directly. Furthermore, the optical device can also be arranged directly by shaping the sealing compound. Manufacture of the image acquisition system can be incorporated into a board populating process. | 10-27-2011 |
20110260036 | Temporally- And Spatially-Resolved Single Photon Counting Using Compressive Sensing For Debug Of Integrated Circuits, Lidar And Other Applications - A method for photon counting including the steps of collecting light emitted or reflected/scattered from an object; imaging the object onto a spatial light modulator, applying a series of pseudo-random modulation patterns to the SLM according to standard compressive-sensing theory, collecting the modulated light onto a photon-counting detector, recording the number of photons received for each pattern (by photon counting) and optionally the time of arrival of the received photons, and recovering the spatial distribution of the received photons by the algorithms of compressive sensing (CS). | 10-27-2011 |
20110260037 | LIGHT CONCENTRATION APPARATUS, SYSTEMS AND METHODS - An optical concentrator is disclosed which includes an imaging, aplanatic optical element having a front surface with a one-way light admitting portion, a back surface with a reflective portion, and an interior region of refractive material disposed between the front and backs surfaces. | 10-27-2011 |
20110260038 | SOLID-STATE IMAGE PICKUP ELEMENT AND METHOD FOR CONTROLLING THE SAME - A transfer circuit is configured to transfer signal charges of an accumulating region to a floating diffusion region when being operated, while being configured to stop the transfer of the signal charges when not being operated, by use of a transfer gate which is turned on and off in response to a transfer control signal. The pixel control circuit controls the transfer circuit according to a light receiving level of a pixel circuit so as to extend an operation period of the pixel circuit in a case where a light receiving quantity is not lower than a predetermined quantity, contrary to a case where the light receiving quantity is lower than the predetermined quantity. | 10-27-2011 |
20110260039 | Imaging Array with Modulated Pixels - An imaging array and a method for operating the same are disclosed. The imaging array includes a plurality of light pixels and a sense amplifier. Each light pixel includes a photodetector that generates and couples a signal indicative of a light exposure to a light pixel node, a readout circuit, and a mixer that mixes a signal on the light pixel node with a pixel oscillator signal. The sense amplifier includes an input node that receives a signal from each light pixel, one light pixel at a time. The sense amplifier also includes a high pass filter that attenuates signals with frequencies less than a cutoff frequency and a mixer that demodulates the signal from the filter to provide a signal that is related to the potential on the light pixel node of the light pixel connected to the first input node. | 10-27-2011 |
20110266416 | IMAGING APPARATUS, IMAGING METHOD, AND IMAGING PROGRAM - An imaging operation is executed by partially shielding, from incident light coming from a subject, a photodetecting element (A(m, n)) including a photodetecting surface (P(m, n)) having a prescribed area and adapted to generate output values corresponding to light quantities received by the photodetecting surface, acquiring output values from the photodetecting element in each of a plurality of states in which different portions of the photodetecting element are shielded, and calculating a pixel information corresponding to a light quantity received by a region that is smaller than the photodetecting surface of the photodetecting element based on differences between the output values acquired in the plurality of states. | 11-03-2011 |
20110266417 | DIGITAL DOUBLE SAMPLING METHOD, A RELATED CMOS IMAGE SENSOR, AND A DIGITAL CAMERA COMPRISING THE CMOS IMAGE SENSOR - A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage. | 11-03-2011 |
20110278435 | IMAGE SENSOR APPARATUS - An image sensor comprises a photoelectric-conversion-film current detector which detects a photoelectric conversion film current produced by combination of holes generated in a photoelectric conversion film with electrons supplied from an electron supplying source array to the photoelectric conversion film; a plurality of integrators which sequentially perform temporal integration on the photoelectric conversion film current during respective corresponding pixel periods during which electrons are supplied to said pixel areas, so as to generate integral signals; and sampling means which samples the integral signals of the plurality of integrators in each of the pixel periods to generate an image signal. | 11-17-2011 |
20110278436 | IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER - An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer. | 11-17-2011 |
20110284722 | Light-sensing circuit, method of operating the light-sensing circuit, and light-sensing apparatus employing the light-sensing circuit - Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor. | 11-24-2011 |
20110284723 | Semiconductor nano-wire antenna solar cells and detectors - Patterning planar photo-absorbing materials into arrays of nanowires is demonstrated as a method for increasing the total photon absorption in a given thickness of absorbing material. Such a method can provide faster, cheaper, and more efficient photo-detectors and solar cells. A thin nanowire can absorb many more photons than expected from the size of the nanowire. The reason for this effect is that such nanowires support cylindrical particle resonances which can collect photons from an area larger than the physical cross-section of the wire. These resonances are sometimes referred to as Mie resonances or Leaky Mode Resonances (LMRs). The nanowires can have various cross section shapes, such as square, circle, rectangle, triangle, etc. | 11-24-2011 |
20110284724 | Method and Apparatus for Non-line-of-sight Imaging - A system and method for obtaining an image of an object out of line of sight, the method comprising directing a chaotic light beam at a first area containing the object; measuring the light from the chaotic light beam at a plurality of instances in time; using a photon detector, detecting light from a second area over a plurality of instances in time; the photon detector not being in the line of sight with the first area but in line-of-sight with a second area; using a processor, correlating the information received by the photon detector with the measurement of light from the chaotic light beam at specific instances in time; and producing an image of the object. The system for imaging information comprising a spatial receiver, a chaotic photon light source for producing light; the light comprising a first beam adapted to be directed at a first predetermined area containing an object, and a second beam which is received by the spatial receiver and measured at specific intervals in time; at least one processor operatively connected to the spatial receiver, the spatial receiver operating to transmit spatial information correlated to specific intervals of time to the processor; and a first receiver operatively connected to the at least one processor and operative to detect the influence of the object on the first portion of the light beam; the first receiver not being in the line of sight with the first predetermined area and adapted to detect light from a second predetermined area spaced from and coplanar with the first predetermined area, the at least one processor operating to correlate the outputs of the first receiver with spatial information derived from the spatial receiver at correlating intervals of time to create an image of the object. | 11-24-2011 |
20110290982 | OPTICAL FILTER SUITABLE FOR DEALING WITH A RADIATION OF VARIABLE INCIDENCE AND DETECTOR INCLUDING SAID FILTER - An optical filter for filtering an electromagnetic radiation of variable angle of incidence, includes a stack of at least one dielectric or semi-conductor layer arranged between two partially reflective layers, said stack defining a set of Fabry-Pérot cavities set to a predetermined wavelength. The average refractive index of the dielectric or semi-conductor layer is variable in a plane orthogonal to the direction of the stack so as to compensate the effects of the variation in the angle of incidence of the electromagnetic radiation on the transmission spectrum of the cavities. | 12-01-2011 |
20110290983 | CMOS IMAGER WITH COMPANDED COLUMN SIGNALS - A non-linear conversion capability within an on-chip, per-column analog-to-digital converter (ADC) is provided to expand a compressed analog signal such that the resulting digital output that has a predetermined (linear or non-linear) mapping with respect to input brightness level of an incoming light signal to a row of pixels. The predetermined mapping may also be provided by a non-linear amplifier coupled to a linear or non-linear ADC and a resulting compressed non-linear digital representation at the output of the ADC is substantially linearized by an on-chip or an off-chip look-up table (LUT). | 12-01-2011 |
20110290984 | INTEGRATED CIRCUIT ARRAY, AND IN PARTICULAR A LARGE-SIZED IMAGE SENSOR - The invention relates notably to large-sized image sensors or image sensors with a large number of rows. Each column of pixels is organized in P superposed blocks. A row decoder organized as P identical decoders selects one row out of M in each of the P blocks. Each block is linked to one respective column conductor out of P column conductors. P read circuits CL | 12-01-2011 |
20110290985 | PHOTOELECTRONIC CONVERSION DEVICE - A photoelectric conversion device may include a pixel array including a plurality of two-dimensionally arranged pixels, and a plurality of analog-to-digital converters (ADCs). Each ADC may include a pulse delay circuit including a plurality of connected delay unit stages, each of which delays a pulse signal during a delay time corresponding to a magnitude of a voltage of the pixel signal read from the pixel array, an encoder unit that outputs a digital value based on the number of stages of the delay units through which the pulse signal has passed during a predetermined time, and a correction unit that corrects the digital value output by the encoder unit by a rate corresponding to the number of stages of the delay units through which the pulse signal has passed during a predetermined period. | 12-01-2011 |
20110297814 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor has a pixel, a vertical signal line, and a control unit. The pixel has a photoelectric conversion part, a charge-voltage conversion part, a transfer transistor, an amplifying transistor, a selection transistor which selects whether or not to output a signal, and a reset transistor which resets a charge of the charge-voltage conversion part. The charge-voltage conversion part is connected to the amplifying transistor and the reset transistor by connection wiring. To the vertical signal line, a signal output from the amplifying transistor is transmitted. The control unit controls the reset transistor and the selection transistor so that the selection transistor is in the on state when the reset transistor changes from the on state to the off state during the reset period in which a charge of the photoelectric conversion part is reset. | 12-08-2011 |
20110303821 | Active Photosensing Pixel - An active photosensing pixel is disclosed, in which a two-terminal photosensing transistor has a first terminal coupled to a first node, a second terminal coupled to a selection line and a control terminal connected to the second terminal. A driving transistor has a first terminal coupled to a first reference voltage, a second terminal coupled to an output line and a control terminal connected to the first node. A reset capacitor has a first terminal connected to the control terminal of the two-terminal photosensing transistor, and a second terminal connected to the first node. | 12-15-2011 |
20110303822 | ELECTRON MULTIPLICATION IMAGE SENSOR AND CORRESPONDING METHOD - The invention relates to image sensors and more particularly those which are intended to capture images at low luminance levels. An active-pixel image sensor is provided, each pixel comprising, on the surface of a semiconductor active layer, a photodiode region adjacent a transfer gate itself adjacent a charge storage region, the transfer gate permitting, when it receives a transfer pulse, the transfer of charge from the photodiode region to the storage region. The photodiode region is adjacent an accelerating gate isolated from the semiconductor active layer. Switching means are provided so as to apply to the accelerating gate, during an integration phase preceding the transfer pulse, a series of high-potential/low-potential alternations inducing an electric field alternately in one direction and in the other direction between the photodiode region and the active layer region located beneath the accelerating gate. Impacts with atoms of the lattice create secondary electrons, thereby increasing the sensitivity of the sensor. | 12-15-2011 |
20110303823 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels | 12-15-2011 |
20110303824 | Apparatus for Sub-Wavelength Near-Field Focusing of Electromagnetic Waves - Planar sub-wavelength structures provide superlensing, i.e., electromagnetic focusing beyond the diffraction limit. The planar structures use diffraction to force the input field to converge to a spot on the focal plane. The sub-wavelength patterned structures manipulate the output wave in such a manner as to form a sub-wavelength focus in the near field. In some examples, the sub-wavelength structures may be linear grating-like structures that can focus electromagnetic radiation to lines of arbitrarily small sub-wavelength dimension, or two dimensional grating-like structures and Bessel (azimuthally symmetric) structures that can focus to spots of arbitrarily small sub-wavelength dimensions. The particular pattern for the sub-wavelength structures may be derived from the desired focus. Some examples describe sub-wavelength structures that have been implemented to focus microwave radiation to sub-wavelength dimensions in the near field. | 12-15-2011 |
20110309232 | HIGH DYNAMIC RANGE IMAGING SYSTEMS - An imaging system may include an imager with pixels and with reset lines that can be selectively deactivated and floated. When the reset lines are deactivated and floated, the reset lines may be connected to floating diffusion nodes in the pixels to increase the capacitance of the floating diffusion nodes. The reset lines may have parasitic capacitances that are used to supplement the capacitances of the floating diffusion nodes, when the reset lines are connected to the floating diffusion nodes. The imager may be used to capture high dynamic range images by simultaneously capturing a first image with a long integration time and a second image with a short integration time. The first and second images may be combined into a high dynamic range image. | 12-22-2011 |
20110309233 | SELECTED SPECTRAL ABSORPTION OF NANOWIRES - Methods, apparatuses, systems, and devices relating to fabricating one or more nanowires are disclosed. One method for fabricating a nanowire includes: selecting a particular wavelength of electromagnetic radiation for absorption for a nanowire; determining a diameter corresponding to the particular wavelength; and fabricating a nanowire having the determined diameter. According to another embodiment, one or more nanowires may be fabricated in an array, each having the same or different determined diameters. An image sensor and method of imaging using such an array are also disclosed. | 12-22-2011 |
20110309234 | IMAGE SENSING MODULE - The present invention provides an image sensing module including an image sensing device and a calculation device. The image sensing device includes a plurality of pixels for acquiring an operation image containing an object image. The calculation device stores a look-up table regarding a temperature related parameter and a position deviation of the object image at each pixel associated with the temperature related parameter, and selects a deformation error from the look-up table according to the temperature related parameter corresponding to the operation image so as to correct a current position of the object image in the operation image. | 12-22-2011 |
20110309235 | A/D CONVERTER, SOLID-STATE IMAGE SENSOR USING PLURALITY OF A/D CONVERTERS AND DRIVING METHOD OF A/D CONVERTER - An analog-to-digital converter converts an analog signal into a digital signal by measuring a time period until a magnitude relation between a voltage level of a reference signal that changes along with time and a voltage level of the analog signal is inverted. The converter comprises a holding unit which holds, as a voltage level that is an analog value, an offset value of the analog-to-digital converter upon analog-to-digital converting a reference voltage level by the analog-to-digital converter, wherein the offset value of the analog-to-digital converter is corrected by changing the voltage level of the analog signal by the voltage level of the offset value held by the holding unit. | 12-22-2011 |
20110309236 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 12-22-2011 |
20110315853 | STORING DATA IN DUMMY PIXELS IN AN IMAGE SENSOR - An image sensor includes a dummy pixel array with at least one dummy pixel, a pixel array with a plurality of main pixels, and a data processing unit configured to process a signal provided from the main pixels. The dummy pixel includes: a first switch having a first terminal receiving a first voltage and a second terminal coupled to a floating node; a second switch having a first terminal receiving a second voltage; a third switch coupled between a second terminal of the second switch and the floating node; and a driving element configured to drive a first terminal thereof according to a voltage level applied to the floating node. | 12-29-2011 |
20110315854 | READOUT TRANSISTOR CIRCUITS FOR CMOS IMAGERS - A readout transistor circuit for a pixel is disclosed. The readout transistor circuit includes a sense node. A reset transistor is in signal communication with the sense node. A source follower transistor is in signal communication with the sense node. A row select transistor is in signal communication with the source follower transistor. A switching transistor is in signal communication with the sense node. A capacitor is in signal communication with the switching transistor. The switching transistor is configured to place the capacitor in signal communication with the sense node to switch between a low voltage-per-charge (V/e−) ratio and a high voltage-per-charge (V/e−) to enable low noise performance of the sense node. The capacitor may be a metal-insulator-metal (MIM) capacitor. At least one of the reset transistor, the source follower transistor, the row select transistor, and the switching transistor may be a MOSFET. One or more of the MOSFETs may be a buried channel MOSFET. | 12-29-2011 |
20110315855 | APPARATUS AND METHOD FOR CAPTURING STILL IMAGES AND VIDEO USING CODED LENS IMAGING TECHNIQUES - An apparatus for capturing images. In one embodiment, the apparatus comprises: a coded lens array including a plurality of lenses arranged in a coded pattern and with opaque material blocking array elements that do not contain lenses; and a light-sensitive semiconductor sensor coupled to the coded lens array and positioned at a specified distance behind the coded lens array, the light-sensitive sensor configured to sense light transmitted through the lenses in the coded lens array. | 12-29-2011 |
20120001054 | SENSING DEVICE AND IMAGE SENSOR MODULE THEREOF - An image sensor module is installed in a sensing device, and is used to detect a reflected light of an object. The image sensor module includes a carrier, a light sensing element, and a package body. The light sensing element is disposed on a substrate. The carrier is disposed on the substrate in the sensing device. The light sensing element is installed in the carrier, and is electrically connected with the substrate via multiple solder balls. The package body is installed on the carrier, and has a reflecting and diverting element, which is located between the light sensing element and the object and is used for reflecting reflected light of the object and diverting the reflected light towards a receiving direction of the light sensing element. The light sensing element receives the reflected light and generates a corresponding sensing signal. | 01-05-2012 |
20120001055 | RAMP SIGNAL GENERATOR AND IMAGE SENSOR - Disclosed are a ramp signal generator and an image sensor. The ramp signal generator includes: a comparator comparing a first bias voltage input to a first input terminal and a second bias voltage input to a second input terminal and outputting a ramp signal from an output terminal; a ramp signal adjustment unit including a plurality of switched capacitors made up of switches and capacitors connected in series, and connected in parallel between a first input terminal of the comparator and an output terminal of the comparator; and a controller switching the switches of the plurality of switched capacitors to adjust the ramp signal output from the comparator such that the ramp signal becomes nonlinear over time. | 01-05-2012 |
20120001056 | CCD-BASED MULTI-TRANSISTOR ACTIVE PIXEL SENSOR ARRAY - A floating electrode is used to detect ions in close proximity to the electrode. The electrode is charge coupled to other electrodes and to other transistors to form a pixel that can be placed into an array for addressable readout. It is possible to obtain gain by accumulating charge into another electrode or onto a floating diffusion (FD) node or directly onto the column line. It is desirable to achieve both a reduction in pixel size as well as increase in signal level. To reduce pixel size, ancillary transistors may be eliminated and a charge storage node with certain activation and deactivation sequences may be used. | 01-05-2012 |
20120001057 | SOLID-STATE IMAGING APPARATUS AND IMAGING APPARATUS - A solid-state imaging apparatus includes a comparator for comparing a pixel signal obtained by a pixel section and a reference signal the value of which varies in a stepwise manner, an analog-digital converter for outputting, as a digital value, the amount of time when the pixel signal and the reference signal change levels by the comparator; a reset signal generator for generating a reset signal that triggers a reset operation to be input to the comparator in order to adjust the reference in the analog-digital converter, and a waveform processor provided between the reset signal generator and the comparator for increasing the degree of dullness of a waveform of the reset signal. | 01-05-2012 |
20120006971 | RADIATION-HARDENED ROIC WITH TDI CAPABILITY, MULTI-LAYER SENSOR CHIP ASSEMBLY AND METHOD FOR IMAGING - An integrated circuit for generating image data comprises a focal-plane array of unit cells, a controller, and a memory structure having a plurality of storage locations. Each unit cell may store charge based on detected photons. The controller may read a value based on the stored charge from at least some of the unit cells, and either add the read value to an existing value in the corresponding storage location when operating in frame-sum mode, or add the read value to an existing value in a shifted storage location when operating in time-delay integration (TDI) mode. This may allow faint objects as well as objects moving in the field-of-view of the focal-plane array to be observed. The integrated circuit may be fabricated from radiation-hardened CMOS technology and may be a layer of a sensor chip assembly. | 01-12-2012 |
20120006972 | COLUMN CIRCUIT AND PIXEL BINNING CIRCUIT FOR IMAGE SENSOR - A column circuit for an image sensor includes a first column read circuit configured to read data of a first column line, and a second column read circuit configured to read data of a second column line, wherein, during a binning mode, data from two or more pixels are outputted through the first column line and stored in the first column read circuit in a first phase, data from two or more pixels are outputted through the second column line and stored in the second column read circuit in a second phase, and charges are shared between the first column read circuit and the second column read circuit in a third phase. | 01-12-2012 |
20120006973 | IMAGE SENSOR WITH SAMPLE AND HOLD CIRCUITRY FOR ADDRESSING TIME VARIANT NOISE - An image sensor includes an array of pixels. Each pixel has at least one photo-sensitive element. Readout circuitry receives an analog signal from each pixel at a first time and at a second time, between which the analog signal changes. The image sensor further includes associated support circuitry which is a source of time variant noise. The signal level at both first and second times includes pixel noise. Sample and hold circuitry is provided to maintain substantially level at least a proportion of this support circuitry noise time invariant at the sensor output between the first time and the second time. | 01-12-2012 |
20120006974 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a pixel outputting a photoelectrically converted signal, an ADC circuit disposed in an edge portion of a pixel area to convert an analog signal of the pixel into a digital signal on the basis of a result of comparison between a signal level output from the pixel and a ramp wave which is a reference, and a multi-ramp-wave generating circuit generating a plurality of ramp waves with different amplitudes and combining the plurality of ramp waves to obtain the ramp wave. | 01-12-2012 |
20120006975 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises first accumulation units, of which number is n, holding a digital value of n-bits output from a counter, second accumulation units, of which number is n, holding the digital value of n-bits transferred from the first accumulation units, of which number is n, and an A/D converter writing the digital value of n-bits from the counter based on an image signal generated by pixels into the first accumulation units, of which number is n, wherein correspondingly to each column of the pixels, the first accumulation unit of m-th bit (1≦m≦n) and the second accumulation unit of m-th bit (1≦m≦n) are arranged and paired, and the pairs of which number is n are arranged in a direction along the column of pixels. | 01-12-2012 |
20120012736 | Image Sensor - Image sensor, comprising a matrix of active pixels having several columns for delivering at least one information signal of an active pixel, the sensor comprising means for processing the information signals delivered by the said active pixels which comprise at least one amplification stage biased by a current source, the processing means comprising a device for voltage-limiting the signal delivered on an output terminal of the said at least one amplification stage comprising an input terminal connected to the output terminal, a first transistor connected between the input terminal and a reference terminal connected to a reference power supply source, a gain device comprising an input connected to the input terminal, an output connected to the gate of the first transistor and configured so as to decrease the voltage span necessary to cause the first transistor to toggle from its off state to a state in which it absorbs the current provided by the said current source. | 01-19-2012 |
20120018616 | Optics for multi dimensional imaging - Optical systems and methods in accordance with some embodiments discussed herein can receive one or more beams of light from the system's field of view. Internal optical components can then direct the beam of light, including splitting the beam of light, rotating at least one of the split beams of light, and displacing one or more of the beams of light, such that the split beams of light are parallel to each other. Each beam of light may then be directed onto at least one linear detector array. The linear detector array can transform the light into electrical signals that can be processed and presented in a human-readable display. | 01-26-2012 |
20120018617 | Semiconductor device, solid-state imaging device, method for manufacturing semiconductor device, method for manufacturing solid-state imaging device, and electronic apparatus - Disclosed herein is a semiconductor device including an element isolation region configured to be formed on a semiconductor substrate, wherein the element isolation region is formed of a multistep trench in which trenches having different diameters are stacked and diameter of an opening part of the lower trench is smaller than diameter of a bottom of the upper trench. | 01-26-2012 |
20120018618 | Imaging Device Having Improved Performance and Method of Controlling It - Imaging device comprising at least one photosite comprising a charge storage semiconductor zone, a charge collection semiconductor zone and transfer means designed to permit charge transfer between the charge storage zone and the charge collection zone, characterized in that the charge storage semiconductor zone comprises a lower semiconductor zone and a conduction channel buried beneath the upper surface of the photosite and connecting said lower semiconductor zone to the charge collection zone. | 01-26-2012 |
20120018619 | Method of Resetting a Photosite, and Corresponding Photosite - A method of resetting a photosite is disclosed. Photogenerated charges accumulated in the photosite are reset by recombining the photogenerated charges with charges of opposite polarity. | 01-26-2012 |
20120018620 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR - A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light. | 01-26-2012 |
20120025059 | Solid-state imaging device and method of manufacturing the same, and imaging apparatus - A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion. | 02-02-2012 |
20120025060 | SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC INFORMATION DEVICE - A color filter is formed using a simple manufacturing method, and bias application to a pixel separating electrode allows sensitivity in low illumination intensity to be improved. In a solid-state imaging element, in which a plurality of unit pixel sections are disposed two dimensionally on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, each unit pixel section having a light receiving section for generating a signal charge by light irradiation, an adjoining unit pixel section is formed in the same color to allow for lesser alignment accuracy of the color filter. A pixel separating electrode is formed in the adjoining unit pixel section, and a signal charge is shared by bias application during low illumination intensity, thereby improving an effective photodiode area. | 02-02-2012 |
20120025061 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film. | 02-02-2012 |
20120025062 | HYBRID ANALOG-TO-DIGITAL CONVERTER, AN IMAGE SENSOR AND A METHOD FOR PROVIDING A PLURALITY OF DIGITAL SIGNALS - A hybrid analog-to-digital converter includes a plurality of converting circuits. Each converting circuit is configured to provide a digital signal based on an analog input signal by performing a successive approximation conversion to obtain, as a result of the successive approximation conversion, a first number of bits of the digital signal, and by subsequently performing a slope conversion based on a common variable reference voltage to obtain a second number of bits of the digital signal, the second number of bits corresponding to a residual between the analog input signal and the result of the successive approximation conversion. The hybrid analog-to-digital converter further includes a common variable reference voltage provider configured to provide to each converting circuit of the plurality of converting circuits the common variable reference voltage. | 02-02-2012 |
20120032066 | Sensing Devices and Manufacturing Methods Therefor - A sensing device is provided. The sensing device includes a sensing pixel array and a memory unit. The sensing pixel array is formed in a substrate and includes a plurality of pixels for sensing light. The substrate has a first side and a second side opposite to the first side and receives the light through the first side for sensing the light. The memory unit is formed on the second side of the substrate for memorization. | 02-09-2012 |
20120037787 | IMAGE SENSOR - An image sensor comprises, a substrate, a plurality of photoelectric converters mounted on the substrate, for each of which a photoelectric conversion layer is formed of an organic compound layer and is sandwiched between an anode and a cathode so as to perform photoelectric conversion based on incident light, drive circuits for detecting output provided by a signal current generated by the photoelectric converters and for reading signal charges, and a wiring for electrically connecting the photoelectric converters and the drive circuits, wherein, for the plurality of the photoelectric converters that form one read pixels, the size of a photoelectric conversion area differs in accordance with a sensitivity of each of the plurality of photoelectric converters. | 02-16-2012 |
20120037788 | PASSIVE TYPE IMAGE SENSOR AND METHOD OF OPERATING THE SAME - A passive type image sensor and a method for operating the same. The passive type image sensor includes a photoelectric conversion section configured to receive light and integrate electric charges; a transfer section configured to transmit the integrated electric charges; an output section configured to received integrated electric charges from the transfer section and amplify and output the amplified electric charges; and an electric charge discharging section configured to discharge the electric charges flowing from the photoelectric conversion section to a common node through the transfer section while integrating the electric charge integration in the photoelectric conversion section. | 02-16-2012 |
20120037789 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 02-16-2012 |
20120043455 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 02-23-2012 |
20120043456 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device may include: an image pickup unit in which a plurality of pixels are arranged in a matrix; a sample-and-hold unit having a switch element and a capacitance element; a frequency conversion unit in which a plurality of stages of inverting circuits are connected, the pixel signal is supplied to the first power supply terminal, and a start signal for starting clock generation and an output signal from the inverting circuit of a predetermined stage are input to one of the inverting circuits; a counting unit that counts the clock output from the frequency conversion unit; and a buffer circuit provided between a first terminal of the capacitance element connected to the switch element and the first power supply terminal, wherein a second terminal of the capacitance element is connected to the second power supply terminal. | 02-23-2012 |
20120056073 | PIXEL, METHOD OF MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICES INCLUDING THE SAME - A pixel of an image sensor includes a color filter configured to pass visible wavelengths, and an infrared cut-off filter disposed on the color filter configured to cut off infrared wavelengths. | 03-08-2012 |
20120056074 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 03-08-2012 |
20120056075 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 03-08-2012 |
20120056076 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 03-08-2012 |
20120056077 | DEVICE AND METHOD FOR THE ACQUISITION AND AUTOMATIC PROCESSING OF DATA OBTAINED FROM OPTICAL CODES - The device for the acquisition and automatic processing of data obtained from optical codes comprises a CMOS optical sensor; an analog processing unit connected to the optical sensor; an analog/digital conversion unit connected to the analog processing unit; a logic control unit connected to the CMOS optical sensor, the analog processing unit and the analog/digital conversion unit; and a data-processing unit connected to the logic control unit and the analog/digital conversion unit. The CMOS optical sensor and at least one of the analog processing, analog/digital conversion, logic control and data processing units are integrated in a single chip. The data processing unit processes the digital signals corresponding to the image acquired by the CMOS sensor and extracts the optically coded data. | 03-08-2012 |
20120061553 | Imaging device and imaging apparatus - An imaging device includes: a photoelectric conversion layer in which photoelectric conversion devices that convert received light into charge are arranged in a planar fashion; and a conductor structure layer provided on an upper surface or a lower surface of the photoelectric conversion layer and formed by stacking plural conductor layers having conductor metals with concavo-concave structures at predetermined periodic intervals within a plane in parallel to light receiving surfaces of the photoelectric conversion devices. | 03-15-2012 |
20120061554 | QUANTITATIVE DIFFERENTIAL INTERFERENCE CONTRAST (DIC) MICROSCOPY AND PHOTOGRAPHY BASED ON WAVEFRONT SENSORS - Embodiments of the present invention relate to a wavefront sensor comprising a film and a photodetector. The film has one or more structured two dimensional apertures configured to convert a phase gradient of a wavefront into a measurable form. The photodetector is configured to receive the wavefront through the one or more 2D apertures and measure the phase gradient of the wavefront. | 03-15-2012 |
20120061555 | ANALOG-TO-DIGITAL CONVERTER WITH PROGRAMMABLE RAMP GENERATOR - An analog-to-digital (ADC) converter is disclosed that uses aspects of a single-slope ramp ADC, but with jump steps in the ramp voltage to increase speed. A programmable ramp generator can be used to dynamically modify a voltage level associated with the jump step. By programming a voltage level of the jump, a user can dynamically modify the speed of the ADC during operation. | 03-15-2012 |
20120068049 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE SENSOR - There is provided a photoelectric conversion device utilizing surface plasmons, including: a plate-shaped light receiving portion which made of metal, provided on a most superficial surface of the photoelectric conversion device, and having a front surface and a rear surface so as to receive incident light at the front surface; a slot-shaped slit provided in the front surface of the light receiving portion; and a voltage detection portion adapted to measure an electric potential at the front surface of the light receiving portion; wherein the incident light is caused to excite surface plasmons through the slit, and an electric potential at the front surface of the light receiving portion induced by the surface plasmons is measured by the voltage detection portion. | 03-22-2012 |
20120068050 | MULTI PIXEL PHOTO DETECTOR ARRAY OF GEIGER MODE AVALANCHE PHOTODIODES - A multi-pixel photodetector array may include a semiconductor substrate having a back side and a front side, Geiger mode avalanche photodiodes (GM-APDs) on the semiconductor substrate, each including an anode contact, and a common cathode for the GM-APDs and having a first connection lead on the backside of the semiconductor substrate. The multi-pixel photodetector array may include a second connection lead, and a common anode on the front side of the semiconductor substrate and configured to couple in common the anode contacts of the GM-APDs to the second connection lead. Each GM-APD may be configured to generate, when a photon impinges thereon, a current pulse of different shape for discrimination by an external circuit connected to the common cathode and the common anode. | 03-22-2012 |
20120068051 | Method Of Driving An Image Sensor - In a method of driving an image sensor, incident light is converted into electric charges in a photoelectric conversion region during a first operation mode. At least one of collected electric charges and overflowed electric charges is accumulated in a floating diffusion region based on illuminance of the incident light. The collected electric charges indicate electric charges that are collected in the photoelectric conversion region. The overflowed electric charges indicate electric charges that have overflowed from the photoelectric conversion region. | 03-22-2012 |
20120074297 | PHOTOSENSOR AND PHOTOSENSOR ARRAY - A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel. | 03-29-2012 |
20120074298 | PHOTOSENSOR AND PHOTOSENSOR ARRAY - A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on. | 03-29-2012 |
20120074299 | LOW CONSUMPTION MATRIX SENSOR - An image matrix sensor having a plurality of individual detection structures associated with respective pixels, each individual detection structure including a photodiode having at least one solar cell mode operating range, a first amplifier stage constantly supplied with power and receiving, as an input, a voltage dependent on the voltage of the photodiode which falls within said range; and a second amplifier stage linked to the output of the first amplifier stage and supplied with power in a different manner according to whether or not the first amplifier stage is read. | 03-29-2012 |
20120074300 | IMAGE SENSOR WITH A GATED STORAGE NODE LINKED TO TRANSFER GATE - A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel. | 03-29-2012 |
20120085888 | BACK-SIDE ILLUMINATED SOLID-STATE IMAGING DEVICE - A back-side illuminated solid-state imaging device includes a photodiode and MOS transistors at a semiconductor substrate. The MOS transistors are formed over the front surface of the semiconductor substrate. The photodiode responds to an incident light applied to the back surface opposite to the front surface of the semiconductor substrate. A charge storing portion, and a first and second transfer gates are formed over the main part of the photodiode and the front surface of the semiconductor substrate located above the vicinity of the main part so as to achieve the global shutter function. Since the irradiation light is incident on the photodiode from the back surface of the semiconductor substrate in back-side illuminated solid-state imaging device, the sensitivity of the photodiode is not reduced even when the first and second transfer gates, and the charge storing portion are formed to achieve the global shutter function. | 04-12-2012 |
20120085889 | IMAGE PICKUP APPARATUS - An apparatus includes pixels each having a transistor that transfers a charge of a photoelectric conversion unit, an amplification unit that receives the transferred charge, a scanning unit that supplies, to the transistor, a conductive pulse, a non-conductive pulse, and an intermediate-level pulse having a peak value between the conductive pulse and the non-conductive pulse, a generating unit that generates an image signal using a signal based on a charge transferred in response to the conductive and intermediate-level pulses, and a control unit that changes at least one of a pulse width of the intermediate-level pulse and the peak value in accordance with information on the detected temperature. The conductive and intermediate-level pulses are supplied to the transistor during a light shielding period of the photoelectric conversion unit. | 04-12-2012 |
20120091317 | IMAGING SYSTEMS AND METHODS INCLUDING PIXEL ARRAYS WITH REDUCED NUMBERS OF METAL LINES AND CONTROL SIGNALS - This is generally directed to systems and methods for reduced metal lines and control signals in an imaging system. For example, in some embodiments a pixel cell of an imaging system can operate without a row select transistor, and therefore can operate without a row select metal control line. As another example, in some embodiments a pixel cell can share its reset transistor control line with a transfer transistor control line of another pixel cell. In this manner, an imaging system can be created that averages a single metal line per pixel cell. In some embodiments, operation of such reduced-metal line imaging systems can use modified timing schemes of control signals. | 04-19-2012 |
20120097838 | IMAGING DEVICE IN PARTICULAR OF THE CMOS TIME DELAY AND INTEGRATION TYPE - An imaging device may be formed in a semiconductor substrate including a matrix array of photosites extending in a first direction and a second direction. The imaging device may include a transfer module configured to transfer charge in the first direction and an extraction module configured to extract charge in the second direction. | 04-26-2012 |
20120097839 | ANALOG-TO-DIGITAL CONVERTER AND IMAGE SENSOR INCLUDING THE SAME - An analog-to-digital converter includes a modulation unit and a digital signal generation unit. The modulation unit is disposed corresponding to at least one column line, and sequentially perform delta-sigma modulation on an analog input signal and at least one residue voltage to generate digital bit stream signals. The analog input signal is input through the at least one column line. The at least one residue voltage is generated by performing the delta-sigma modulation on the analog input signal. The digital signal generation unit generates a digital signal corresponding to the analog input signal based on the digital bit stream signals. | 04-26-2012 |
20120097840 | ANALOG-TO-DIGITAL CONVERTER AND IMAGE SENSOR INCLUDING SAME - An analog-to-digital converter (ADC) within an image sensor includes a comparator comparing a ramp signal with an image signal, and a counter generating a count result in response to the comparison by counting a clock during a counting interval. The ADC determines whether a first counting interval for the counter is less than a reference interval, and if the first counting interval is less than the reference interval the counting interval is a first counting interval, else the counting interval is a second counting interval. | 04-26-2012 |
20120097841 | SOLID-STATE IMAGING APPARATUS, IMAGING SYSTEM, AND DRIVE METHOD OF SOLID-STATE IMAGING APPARATUS - In a solid-state imaging apparatus, if the total read out time of all pixels is shortened when effective pixels are thinned out without thinning out OB pixels, then the rows have different reset time periods, and the problem of uneven charge accumulation time periods arises. An improvement by the present invention is that, if no signals are read out from a part of the rows in an effective pixel region to skip the rows, then the time period in which the rows to be skipped are selected is made shorter than that in which the rows from which signals are read out are selected, and the pixels in the optical black pixel region and those in the effective pixel region are driven by the drive pulses of patterns different from each other. | 04-26-2012 |
20120104228 | PIXEL CIRCUIT, IMAGING INTEGRATED CIRCUIT, AND METHOD FOR IMAGE INFORMATION ACQUISITION - A pixel circuit uses two storage transistors to store two image signal samples, which include a reference signal produced by background noise of the pixel circuit and a signal produced by optical exposure of a photodetector and the background noise of the pixel circuit. An imaging integrated circuit uses a pixel circuit array, which may contain a number of such pixel circuits, and a charge acquisition circuit configured to read out image information obtained by the pixel circuit array. The charge acquisition circuit uses a first amplifier and a serially connected differential integrator that includes a second amplifier, a first differential integrator section and a second differential integrator section for the read out. A method for image information acquisition involves obtaining image information using the pixel circuit array and reading out the image information obtained by the pixel circuit array using the charge acquisition circuit. | 05-03-2012 |
20120104229 | TEMPERATURE SENSOR AND IMAGE SENSOR HAVING THE SAME - A temperature sensor includes a band gap reference (BGR) circuit, a voltage generation unit and a digital CDS circuit. The band gap reference (BGR) circuit generates a reference voltage proportional to a temperature. The voltage generation unit generates a first voltage and a second voltage based on the reference voltage, where the first voltage and the second voltage are proportional to the temperature. The digital CDS circuit generates a digital signal corresponding to the temperature by performing a digital correlated double sampling (CDS) operation on the first voltage and the second voltage. The temperature sensor is able to detect a temperature accurately. | 05-03-2012 |
20120104230 | Image Pick-Up Module And Method For Producing An Image Pick-Up Module - An image pick-up module and method for producing an image pick-up module. An image pick-up module, particularly for installation in an endoscope, the image pick-up module having an electronic image sensor, a first circuit board, a second circuit board and a cable. | 05-03-2012 |
20120104231 | DUAL SPEED READOUT INTEGRATED CIRCUIT FOR HIGH SPATIAL AND TEMPORAL RESOLUTION APPLICATIONS - A dual speed Read-Out Integrated Circuit employs a native pixel array with associated high resolution integration circuits for each pixel and a superpixel array created within the native pixel array by combination of native pixels for charge sharing integration in reduced resolution integration circuits simultaneously with the integration of the high resolution integration circuits. Switching control for readout of the high resolution integration circuits is accomplished at a first frame rate and switching control for readout of the reduced resolution integration circuits is accomplished at a second higher frame rate. | 05-03-2012 |
20120104232 | IMAGE SENSOR HAVING SUB-SAMPLING FUNCTION - An image sensor includes, inter alia, a pixel array, read-out circuit blocks, and switching units. The pixel array includes unit pixels arranged in rows and columns. Two or more read-out circuit blocks sample, amplify, and perform analog-to-digital conversion on unit pixel data to read image data of the pixel array. The switching units establish connection between column lines of the pixel array and the read-out circuit blocks. The switching units establish connection between the column lines of the pixel array and the read-out circuit blocks such that data of all of the sampled pixels in a sub-sampling mode is processed by less than all of the read-out circuit blocks. | 05-03-2012 |
20120104233 | SOLID-STATE IMAGING DEVICE AND METHOD OF DRIVING THE SAME - A solid-state imaging device counts down clock pulses until a comparator indicates a predetermined comparison result using a counter while comparing, in the comparator, a reset component outputted from one of pixel circuits which is yet to receive light with a reference signal, and holds in a latch a value indicated by the counter as a result of the count down. The solid-state imaging device counts up, after presetting the value held in the latch to the counter, the clock pulses until the comparator indicates a predetermined comparison result using the counter while comparing, in the comparator, a signal component outputted from one of the pixel circuits which has received light with the reference signal, and outputs a value indicated by the counter as a result of the count up as a digital signal that indicates an amount of light received by the one of the pixel circuits. | 05-03-2012 |
20120104234 | IMAGE PICKUP CIRCUIT - An image pickup circuit including a plurality of circuit blocks. Each of the plurality of circuit blocks includes a plurality of comparing elements, a single counter, and a plurality of storage units. Each of the comparing elements compares a pixel signal supplied through a vertical signal line connected to vertically aligned pixels in a plurality of pixels arranged in a matrix, and a slope signal whose voltage is changed from an initial voltage at a constant slope. The counter counts an elapsed time since a voltage of the slope signal starts to change from the initial voltage. Each of the storage units stores a count value obtained by the counter in accordance with a comparison result of the comparator, the count value corresponding to an elapsed time until the voltage of the slope signal is changed from the initial voltage to a voltage coinciding with the pixel signal. | 05-03-2012 |
20120104235 | METHOD OF CONTROLLING SEMICONDUCTOR DEVICE, SIGNAL PROCESSING METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS - A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended. | 05-03-2012 |
20120112038 | METHOD AND SYSTEM FOR ACTIVE IMAGING WITH A LARGE FIELD - The present disclosure relates to an imaging system comprising an impulsion light source for an input light beam oriented toward an observed area and an optoelectronic sensor having a photosensitive surface with a visibility capable of substantially covering the observed area. An impulsion of the incident light beam is backscattered by only by a portion of the observed area into a backscattered spot on the photosensitive surface. A deflection device deflects the impulsions of the incident light beam onto the respective portions of the observed area. A device acquires the thumbnail images corresponding to the backscattered spots resulting in impulsions of the incident light beam. The system combines said thumbnail images to produce an image having a sufficiently high signal-to-noise ratio for portions of interest of the observed area. a high spatial resolution, and a greater insensitivity to motion blurs. | 05-10-2012 |
20120112039 | IMAGE SENSOR - An image sensor with a small circuit area is provided. In the image sensor, a TX decoder which generates transfer signals TX<3:0> includes a latch circuit. The latch circuit is set when a corresponding row group is selected and when a set signal is set to an “H” level, and is reset when a reset signal is set to an “L” level. The latch circuit serves also as a voltage level shift circuit which converts the “H” level of a signal from a first power supply voltage into a second power supply voltage. Therefore, plural row groups can be selected by setting plural latch circuits. It is not necessary to provide a voltage level shift circuit separately. | 05-10-2012 |
20120112040 | IMAGE SENSOR - There is provided an image sensor, including an input control unit configured to control signal paths between a plurality of pixels and a plurality of sampling units and supplying outputs from the plurality of pixels in row units to the plurality of sampling units during a normal operation, while supplying the outputs from the plurality of pixels by color, to the plurality of sampling units during a binning operation; and an output control unit configured to control signal paths between the plurality of sampling units and an amplification unit and sequentially supplying outputs from the plurality of sampling units to the amplification unit during the normal operation while simultaneously supplying the outputs from the plurality of sampling units to the amplification unit during the binning operation. | 05-10-2012 |
20120112041 | METHOD AND SYSTEM FOR AN IMAGE SENSOR CAPABLE OF PERFORMING SELECTIVE ANALOG BINNING OPERATION - Provided is an image sensor including a plurality of sampling units, a plurality of signal lines connected to an amplification unit; and a plurality of first switches positioned between the plurality of sampling units and the plurality of signal lines, connecting a plurality of sampling units to the plurality of signal lines when performing analog binning operation, and connecting one of the plurality of sampling units to one of the signal lines when performing a general operation. | 05-10-2012 |
20120112042 | MOLDED IMAGE SENSOR PACKAGE AND METHOD - An image sensor package includes an image sensor, a window, and a molding, where the molding includes a lens holder extension portion extending upwards from the window. The lens holder extension portion includes a female threaded aperture extending from the window such that the window is exposed through the aperture. A lens is supported in a threaded lens support. The threaded lens support is threaded into the aperture of the lens holder extension portion. The lens is readily adjusted relative to the image sensor by rotating the lens support. | 05-10-2012 |
20120112043 | Semiconductor image sensor array device, apparatus comprising such a device and method for operating such device - A plural line CMOS sensor array device is provided with sensor cells arranged in a matrix of coordinate-wise rows and columns Each cell comprises a photosensitive area, an output node, and a transfer gate for selectively interconnecting the photo-sensitive area and the output node. Along at least a first coordinate direction adjacent cells are functionally configured as mutually mirror-symmetric structures in that their proximate output nodes are facing each other and are arranged for separately feeding a respective output channel. | 05-10-2012 |
20120119063 | Solid-state imaging device and method of adjusting reference voltage - A solid-state imaging device includes: a pixel array unit that includes a plurality of pixels arranged two dimensionally and a plurality of read-out signal lines used for reading out pixel signals from the plurality of pixels; test voltage applying units that are disposed at the read-out signal lines and apply test voltages of various voltage levels to the read-out signal lines; a reference voltage generating circuit that includes a MOS transistor used for generating a reference voltage and can change an operating point of the MOS transistor; and an operating point control unit that controls a process of adjusting the operating point of the MOS transistor based on the test voltages and the reference voltage. | 05-17-2012 |
20120119064 | IMAGE SENSOR - An image sensor for electronic cameras includes a plurality of light sensitive pixels arranged in rows and columns, wherein the pixels of a respective column can be read out via a respective column line and includes a plurality of data outputs, wherein a plurality of column lines are associated with the respective data output via at least one multiplexer device. The column lines are divided into a plurality of column line groups, wherein the respective column line group includes a plurality of column lines arranged next to one another; and wherein the number of column lines of the respective column line group corresponds to the number of the column lines associated with the respective data output. | 05-17-2012 |
20120119065 | IMAGE SENSOR - An image sensor for electronic cameras has an image field having at least one image field block which includes a plurality of light sensitive pixels arranged in rows and columns for generating exposure dependent pixel signals, wherein the pixel signals of the pixels of the respective column of the respective image field block can be read out via one or more respective column lines extending parallel to one another. The image sensor has at least one first row of column amplifiers and at least one second row of column amplifiers for the respective image field block. The image sensor is adapted to read out the pixel signals of the pixels of the respective column of the respective image field block of an image or of two mutually following images partly via the at least one first row and partly via the at least one second row of column amplifiers ( | 05-17-2012 |
20120119066 | CCD - A back-illuminated CCD includes a two-dimensional array of charge collection sites arranged in rows and columns. Each row is associated with a plurality of electrodes at the front face extending in the direction of the row and corresponding to respective phase voltages. A plurality of conducting strips is provided with each strip having repeatedly reversing inclined portions. Each portion is in electrical contact with the electrodes of a corresponding phase voltage of two or more rows. Each portion is inclined relative to the rows in the opposite direction to that in which the preceding portion is inclined. | 05-17-2012 |
20120119067 | IMAGE SENSING DEVICE FOR FAST SIGNAL PROCESSING - An image sensing device includes a first circuit unit configured to convert an image signal provided from a first pixel into a digital value and generate first image data, a second circuit unit configured to convert an image signal provided from a second pixel into a digital value and generate second image data, and a processing unit configured to receive the first image data and the second image data at a substantially same time and sequentially output the first image data and the second image data according to a predetermined speed. | 05-17-2012 |
20120119068 | SOLID STATE IMAGE SENSOR - A solid state image sensor includes a plurality of pixels, each having a photoelectric conversion section formed in the inside of a substrate and a light-receiving section formed on the side of a light-receiving surface of the substrate. At least a part of the plurality of pixels is ranging pixels. The light-receiving section of each of the ranging pixels is equipped with a guided mode resonant filter adapted to reflect incident light getting into the inside of the light-receiving section at a specific incident angle. The normal line of the guided mode resonant filter is inclined relative to the principal ray of the flux of light entering the guided mode resonant filter. | 05-17-2012 |
20120119069 | SOLID-STATE IMAGING DEVICE AND SIGNAL PROCESSING CIRCUIT - A solid-state imaging device includes a semiconductor substrate having a principal surface, and three or more pixel regions formed in at least one direction of two different directions along the principal surface of the semiconductor substrate. Each pixel region includes a plurality of photoelectric conversion regions having different sensitivities. The photoelectric conversion region having the highest sensitivity in peripheral pixel regions of the pixel regions has a higher sensitivity than the photoelectric conversion region having the highest sensitivity in a central pixel region of the pixel regions. | 05-17-2012 |
20120119070 | IMAGE SENSING APPARATUS, IMAGE SENSING APPARATUS CONTROL METHOD, AND IMAGING SYSTEM - An image sensing apparatus comprises: an output unit which includes an output line group, a plurality of difference circuits, a first dummy line, and a second dummy line, and wherein the output line group is interposed between the first dummy line and the second dummy line, a readout unit includes a plurality of memory circuits, each of the plurality of memory circuits includes a first holding capacitance and a second holding capacitance, a gain determined by a ratio of a capacitance value of the first holding capacitance and a capacitance value of a first output line is applied to the first signal output to the first output line, and a gain determined by a ratio of a capacitance value of the second holding capacitance and a capacitance value of a second output line is applied to the second signal output to the second output line. | 05-17-2012 |
20120126094 | ANALOG TO DIGITAL RAMP CONVERTER - A method of analog to digital voltage conversion including: generating a quadratic signal based on an analog time varying reference signal; generating a ramp signal based on the quadratic signal; and converting an analog input voltage to a digital output value based on a time duration determined by a comparison of the analog input voltage with the ramp signal. | 05-24-2012 |
20120126095 | DETECTION APPARATUS AND RADIATION DETECTION SYSTEM - A detection apparatus includes conversion elements and switch elements disposed below the conversion elements; insulating layers are disposed between the conversion elements and switch elements. Each conversion element includes a first electrode corresponding to a switch element. A second electrode extends over the plurality of conversion elements; and a semiconductor layer formed between the first electrodes and the second electrode extends over the plurality of conversion elements. Insulating layers include first regions located immediately below the first electrodes and a second region located between the first regions. A third electrode is disposed in the second region and between the insulating layers. The third electrode is supplied with a potential that sets a potential of a part where the second region is in contact with the semiconductor layer to a value between a potential of the second electrode and a potential of the first electrode. | 05-24-2012 |
20120126096 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE - According to one embodiment, a semiconductor layer in which a photoelectric conversion unit is formed for each pixel, a readout circuit that is formed on a front side of the semiconductor layer and reads out a signal from the photoelectric conversion unit, a light incident surface provided on a back side of the photoelectric conversion unit, and a gettering layer provided on a front side of the photoelectric conversion unit are included. | 05-24-2012 |
20120126097 | IMAGE SENSING DEVICE USING A PHOTOELECTRIC CONVERTER AND A CONTROL METHOD THEREFOR - An image sensing apparatus has a plurality of pixels arranged two dimensionally, each pixel containing a photoelectric converter that outputs a photoelectrically converted signal in response to a quantity of received light, an output unit containing a clamping circuit, a signal supply circuit that outputs a reference signal to the clamping circuit, a control unit that controls to clamp the reference signal prior to outputting the photoelectrically converted signal from the pixel to the clamping circuit, output the photoelectrically converted signal to the clamping circuit, and then output a noise signal from the pixel to the clamping circuit, and a differential circuit that subtracts the noise signal from the photoelectrically converted signal processed by the clamping circuit. | 05-24-2012 |
20120132786 | SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes a pixel cell including an FD node to convert a charge stored in a photodiode into a signal voltage and an amplifier transistor in which a gate is connected to the FD node, a source is connected to an output signal line, and a drain is connected to a pixel-power node, a voltage control portion including a first control transistor in which a gate sets to a first bias voltage, a source is connected to the output signal line, and a drain is connected to a first control portion-power node, a load circuit including a current source connected directly between one end of the output signal line and a source power supply node, and a control circuit which controls an operation to decide a reset voltage of the output signal line. The control circuit boosts the FD node. | 05-31-2012 |
20120132787 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC DEVICE - Disclosed herein is a solid-state imaging device including a pixel region in which a plurality of pixels are arranged. The pixels each includes a photoelectric conversion section, a transfer transistor, a plurality of floating diffusion sections receiving a charge from the photoelectric conversion section through the transfer transistor, a reset transistor resetting the floating diffusion sections, a separating transistor performing on-off control of a connection between the plurality of floating diffusion sections, and an amplifying transistor outputting a signal corresponding to a potential of the floating diffusion sections. | 05-31-2012 |
20120138772 | IMAGE PICKUP DEVICE - An image pickup device may include an image pickup unit in which a plurality of pixels are arranged, the plurality of pixels outputting a first and second pixel signals, and an analog-to-digital (AD) conversion circuit that outputs a digital difference signal. The AD conversion circuit may include a delay circuit that has a plurality of delay devices, the delay circuit outputting a first and second lower phase signals, a latch unit that latches the first and second lower phase signals, a lower counting unit that generates a first and second lower count signals, the lower counting unit generating and outputting a lower difference signal, and a higher counting unit that generates a higher difference signal, subtracts a predetermined number from the higher difference signal, or adds the predetermined number to the higher difference signal, and outputs the higher difference signal after subtraction or addition processing. | 06-07-2012 |
20120138773 | IMAGE CAPTURE APPARATUS - An image capture apparatus includes an image sensor which includes, a plurality of image forming pixels, and a plurality of focus detecting pixels that receive light beams having passed through the exit pupils of the imaging lenses while they are partially shielded, a vertical output line which outputs, in the vertical direction of the image sensor, signals of a plurality of pixels aligned on one column, a vertical addition unit which adds, in the vertical direction of the image sensor, signals of a plurality of pixels aligned on one column, and a control unit which controls so that the vertical addition unit is always OFF when the focus detecting pixel is included in pixels having signals to be added, in adding the signals of the plurality of pixels in the vertical direction and reading them out by the vertical addition unit. | 06-07-2012 |
20120138774 | FOCAL PLANE ARRAY PROCESSING METHOD AND APPARATUS - A digital focal plane array includes an all-digital readout integrated circuit in combination with a detector array. The readout circuit includes unit cell electronics, orthogonal transfer structures, and data handling structures. The unit cell electronics include an analog to digital converter. Orthogonal transfer structures enable the orthogonal transfer of data among the unit cells. Data handling structures may be configured to operate the digital focal plane array as a data encryptor/decipherer. Data encrypted and deciphered by the digital focal plane array need not be image data. | 06-07-2012 |
20120138775 | DATA SAMPLER, DATA SAMPLING METHOD, AND PHOTO DETECTING APPARATUS INCLUDING DATA SAMPLER - A data sampler and a photo detecting apparatus compensate a reference signal with offset information measured from a unit pixel, and compare an offset-compensated reference signal with a data signal, thereby minimizing the impact of an offset occurring with an increase of gain in the data sampler. | 06-07-2012 |
20120145880 | FULL COLOR SINGLE PIXEL INCLUDING DOUBLET OR QUADRUPLET SI NANOWIRES FOR IMAGE SENSORS - An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals. | 06-14-2012 |
20120145881 | SOLID-STATE IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - In a solid-state image pickup apparatus including a pixel array having pixels each including photoelectric conversion element arranged in a matrix, a synchronization signal generation unit generates a horizontal synchronization signal to define a first horizontal period and a second horizontal period different in length from the first horizontal period. Based on the horizontal synchronization signal, a reset scanning circuit sequentially selects and resets pixels in rows of the pixel array, and a readout scanning circuit sequentially selects pixels and reads a pixel signal therefrom. In each pixel, the charge is accumulated in a charge accumulation period starting when the resetting is performed and ending when the pixel signal is read. In one vertical period, the first horizontal period and the plurality of second horizontal period both appear a plurality of times, wherein the second horizontal period appears periodically. | 06-14-2012 |
20120145882 | SENSOR ASSEMBLY, METHOD, AND MEASURING SYSTEM FOR CAPTURING THE DISTRIBUTION OF AT LEAST ONE VARIABLE OF AN OBJECT - A sensor assembly, a method, and a measuring system for capturing the distribution of at least one variable of an object are disclosed. The sensor assembly has at least one sensor element comprising at least one first sensor sub-element and at least one second sensor sub-element. The at least one first sensor sub-element is transparent for at least one wavelength region of light, the at least one second sensor sub-element is sensitive to at least one variable. Furthermore a method and measuring system and an illumination system for illuminating the sensor assembly and the object is provided. | 06-14-2012 |
20120145883 | READOUT CIRCUIT HAVING ENHANCED DYNAMIC RANGE - A method of reading out photocurrent. A readout integrate circuit (ROIC) is provided including an integration capacitor (Cint) having a charging electrode. The ROIC provides linear operation over a linear pixel output signal range when a voltage across Cint (V | 06-14-2012 |
20120145884 | QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Various embodiments include apparatuses including optical and optoelectronic devices and methods of making same. One such device includes an image sensor having an integrated circuit with a number of pixel electrodes, a substantially-continuous optically-sensitive layer, and at least one counter-electrode. The substantially continuous optically sensitive layer is in electrical communication with both the number of pixel electrodes and also the counter-electrode. Additional apparatuses and methods are disclosed. | 06-14-2012 |
20120145885 | IMAGING APPARATUS - An imaging apparatus which can provide a uniform magnetic field distribution in an image pickup device and can reduce the size of the device includes an electron emission source array with a plurality of electron emission sources arranged on a plane, and a translucent substrate having an optoelectronic film opposed to the electron emission source array with a space therebetween. The imaging apparatus includes a magnet portion for forming in the space a magnetic field in a direction orthogonal to each principal plane of the translucent substrate and the electron emission source array, and a magnetic force supply portion. The magnetic force supply portion has a magnetic body which is disposed on the light incident side to be opposed to the translucent substrate with a space therebetween and connected to the magnet portion, and an opening which defines an optical path that will not hinder formation of the optical image. | 06-14-2012 |
20120145886 | CMOS IMAGE SENSORS AND METHODS FOR OUTPUTTING PIXEL DATA AT HIGH SPEEDS - A The CMOS image sensor includes a pixel array including pixels arranged in a matrix of rows and columns and a row selection unit configured to generate selection signals for simultaneously or concurrently selecting at least two rows from the rows of the pixel array in response to a received row address. An analog-to-digital conversion unit is configured to convert pixel data output from the at least two rows selected from the pixel array into a digital video signal and output the digital video signal. The pixel array outputs the pixel data in response to the selection signals. | 06-14-2012 |
20120153122 | Imaging Array With Separate Charge Storage Capacitor Layer - An imaging array comprises a photodetector layer, a readout IC (ROIC) layer, and a charge storage capacitor layer which is distinct from the photodetector and ROIC layers; the layers are electrically interconnected to form the array. The capacitors within the charge storage capacitor layer are preferably micromachined; the charge storage capacitor layer can be an interposer layer or an outer layer. | 06-21-2012 |
20120153123 | IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE - An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature. | 06-21-2012 |
20120153124 | VERTICALLY STRUCTURED PASSIVE PIXEL ARRAYS AND METHODS FOR FABRICATING THE SAME - An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar. | 06-21-2012 |
20120153125 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC INSTRUMENT - A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images. | 06-21-2012 |
20120153126 | SOLID-STATE IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part. | 06-21-2012 |
20120153127 | IMAGE SENSOR WITH REDUCED CROSSTALK - An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material. | 06-21-2012 |
20120153128 | IMAGE SENSOR WITH REDUCED OPTICAL CROSSTALK - A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench. | 06-21-2012 |
20120153129 | IMAGING APPARATUS - An imaging apparatus which can provide a uniform magnetic field distribution in an image pickup device and can be reduced in size includes an electron emission source array with a plurality of electron emission sources arranged on a plane perpendicular to an optical axis, and a translucent substrate having an optoelectronic film disposed on the optical axis to be opposed to the electron emission source array with a space therebetween. The imaging apparatus has a magnet portion for forming in the space a magnetic field in a direction orthogonal to each principal plane of the translucent substrate and the electron emission source array. The magnet portion includes a plurality of magnets which are disposed in parallel to the optical axis so that the respective magnetic poles thereof are arranged in a forward direction in parallel to the optical axis and will not contact with each other. | 06-21-2012 |
20120153130 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF - An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal. | 06-21-2012 |
20120153131 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes: plural pixel cells that are two-dimensionally arrayed, the pixel cell including a photoelectric conversion element and an amplification transistor; plural vertical signal lines; at least two reference current source circuits that includes a reference transistor; and plural load transistors each of which is connected to the vertical signal line, the load transistor constituting a current mirror in conjunction with the reference transistor. The load transistor and the reference transistor are grounded to a common ground line in different positions, and, in at least two position, a distance between connection points at which the load transistor and the reference transistor, which constitute the current mirror, are grounded to the ground line is shorter than a distance between connection points of the load transistors adjacent to each other on the ground line. | 06-21-2012 |
20120168608 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device of the present invention is capable of thinning signals for each column. The solid-state imaging device includes: photo diodes, a drain into which charges transferred by first column CCDs are swept-off, and transfer control units each of which is provided to the corresponding first column CCDs, and transfers, to a row CCD and to the drain, the charges transferred by the corresponding first column CCDs. Each of the transfer control units includes: a second column CCD which transfers, in a column direction, the charges transferred by the first column CCDs corresponding to the transfer control unit, and a column CCD terminal gate which is provided between the second column CCD and the row CCD, and forms a potential barrier between the second column CCD and the row CCD. | 07-05-2012 |
20120168609 | IMAGE SENSORS AND METHODS WITH HIGH SPEED GLOBAL SHUTTER PIXELS - An image sensor includes a plurality of pixels and a row driver. Each pixel includes a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node. The row driver is configured to provide signals to the first transfer gate and the second transfer gate of each pixel such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. The row driver is also configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel. | 07-05-2012 |
20120168610 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a pixel region including a plurality of pixels, each including a photoelectric conversion element, arranged in matrix, and a reset switch for discharging electric charge of the photoelectric conversion element; and a first scanning circuit for supplying a reset control signal for controlling an operation of the reset switch, the pixel region and the first scanning circuit being formed on a semiconductor substrate, in which the pixel region includes a first pixel region and a second pixel region, and the first scanning circuit includes a first decoder for controlling the operation of the reset switch arranged in the first pixel region, and a second decoder for controlling the operation of the reset switch arranged in the second pixel region. | 07-05-2012 |
20120168611 | IMAGE SENSOR PIXEL WITH GAIN CONTROL - A method for reading out an image signal includes providing at least two photosensitive regions and providing at least two transfer gates respectively associated with each photosensitive region. The method also includes providing a common charge-to-voltage conversion region electrically connected to the transfer gates and providing a reset mechanism that resets the common charge-to-voltage conversion region. After transferring charge from at least one of the photo-sensitive regions, all the transfer gates are disabled at a first time. The method further includes enabling at least one transfer gate at a subsequent second time and transferring charge from at least one of the photosensitive regions at a subsequent third time while the at least one transfer gate from the second time remains enabled. | 07-05-2012 |
20120175497 | IMAGE SENSOR PIXELS WITH BACK-GATE-MODULATED VERTICAL TRANSISTOR - Image sensor arrays may include image sensor pixels each having at least one back-gate-modulated vertical transistor. The back-gate-modulated vertical transistor may be used as a source follower amplifier. An image sensor pixel need not include an address transistor. The image sensor pixel with the back-gate-modulated vertical source follower transistor may exhibit high fill factor, large charge storage capacity, and has as few as two row control lines and two column control lines per pixel. This can be accomplished without pixel circuit sharing. The pixel may also provide direct photo-current sensing capabilities. The ability to directly sense photo-current may facilitate fast adjustment of sensor integration time. Fast adjustment of sensor integration time may be advantageous in automotive and endoscopic applications in which the time available for the correction of integration time is limited. | 07-12-2012 |
20120175498 | IMAGE SENSORS AND METHODS WITH SHARED CONTROL LINES - An image sensor includes a pixel array with a plurality of pixels. Two or more rows of pixels in the pixel array share a control line in the pixel array, and pixels of the two or more rows of pixels that are in a same column of the pixel array are connected to provide output to different column readout lines. A method includes providing a control signal over a control line within a pixel array to pixels in two or more rows of the pixel array, and reading out signals from the pixels in the two or more rows at a same time over different column readout lines. An image sensor includes a pixel array with a plurality of pixels, and two or more columns of pixels in the pixel array may share a control line in the pixel array for receiving a control signal. | 07-12-2012 |
20120175499 | PIXEL ARRAY WITH GLOBAL SHUTTER - A pixel includes a photo-sensitive element for generating charges in response to incident radiation. A transfer gate is positioned between the photo-sensitive element and a sense node for controlling transfer of charges to the sense node. A reset switch is connected to the sense node for resetting the sense node to a predetermined voltage. A first buffer amplifier has an input connected to the sense node and an output connected to a sample stage operable to sample a value of the sense node. A second buffer amplifier has an input connected to the sample stage. Control circuitry operates the reset switch and causes the sample stage to sample the sense node while the photo-sensitive element is exposed to radiation. An array of pixels is synchronously exposed to radiation. Sampled values for a first exposure period can be read while the photo-sensitive element is exposed for a second exposure period. | 07-12-2012 |
20120175500 | SOLID STATE IMAGE PICKUP DEVICE - A solid state image pickup device may include a pixel unit that includes a photoelectric conversion element, the pixel unit including a plurality of pixels that are arranged in a form of a two-dimensional matrix in the pixel unit, each of the plurality of pixels outputting a reset signal and a pixel signal, an analog signal processing unit that includes a first capacitor and a second capacitor, a delay circuit that includes a plurality of delay elements that are connected in a ring form, an A/D converter that detects the number of stages in which the pulse signal has propagated through the delay elements in the delay circuit during a sampling time period and generates a digital signal based on the detected number of stages, and a switching circuit that switches a connection of the first capacitor. | 07-12-2012 |
20120175501 | IMAGE SENSING DEVICE AND MANUFACTURE METHOD THEREOF - An image sensing device for receiving an incident light having an incident angle and photo signals formed thereby is provided. The image sensing device includes a micro prism and a micro lens for adjusting the incident angle and converging the incident light, respectively, a photo sensor for converting the photo signals into electronic signals, and an IC stacking layer for processing the electronic signals. | 07-12-2012 |
20120187279 | METHOD OF SENSING OF LOW-VOLTAGE IMAGE SENSOR - A sensing method of an image sensor. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device. | 07-26-2012 |
20120193515 | IMAGERS WITH DEPTH SENSING CAPABILITIES - An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a substrate region formed from a photosensitive portion and a non-photosensitive portion. The depth sensing pixels may include mechanisms that prevent regions of the substrate from receiving incident light. Depth sensing pixel pairs may be formed from depth sensing pixels that have different asymmetrical angular responses. Each of the depth sensing pixel pairs may effectively divide the corresponding imaging lens into separate portions. Depth information for each depth sensing pixel pair may be determined based on the difference between output signals of the depth sensing pixels of that depth sensing pixel pair. The imager may be formed from various combinations of depth sensing pixel pairs and color sensing pixel pairs arranged in a Bayer pattern or other desired patterns. | 08-02-2012 |
20120193516 | HIGH DYNAMIC RANGE PIXEL STRUCTURE - A pixel structure comprises a photo-sensitive element PPD for generating charges in response to light and a charge conversion element FD. A first transfer gate TX is connected between the photo-sensitive element PPD and the charge conversion element. A charge storage element PG is connected to the photo-sensitive element PPD. The charge storage element PG has a higher charge storage density than the photo-sensitive element PPD. The charge storage element PG is located on the photo-sensitive element PPD side of the first transfer gate TX and is arranged to collect charges generated by the photo-sensitive element PPD during an integration period. The charge storage element can be a photo gate, photodiode or capacitor. Arrangements are provided with, and without, a potential barrier between the photo-sensitive element PPD and the charge storage element PG. | 08-02-2012 |
20120199723 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes: a vertical signal line through which a pixel signal read from the pixel is vertically transmitted; a level-shift circuit that shifts a potential at the vertical signal line; a level-shift control circuit that controls an amount of shifted potential at the vertical signal line; a timing control circuit that generates a control signal controlling the level-shift control circuit; and a pixel signal output control unit that controls an output of the pixel signal based on a change in potential at the vertical signal line when the potential at the vertical signal line shifted by the level-shift circuit is used as a reference. | 08-09-2012 |
20120199724 | SEMICONDUCTOR DEVICE, PHYSICAL INFORMATION ACQUIRING APPARATUS, AND SIGNAL READING-OUT METHOD - A semiconductor device includes: an element array portion in which unit elements are disposed in a matrix; and a signal processing portion including a signal processing circuit executing predetermined signal processing based on unit signals outputted from the circuit elements, respectively, every column, in which a function of the signal processing circuit is controlled in such a way that power consumption of the signal processing circuit concerned corresponding to the unit elements each not required becomes lower in a phase of an element selection mode in which only information on a part of the unit pixels for one row in the element array portion is required than in a phase of a normal operation mode. | 08-09-2012 |
20120199725 | PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion. | 08-09-2012 |
20120199726 | IMAGING APPARATUS AND PROCESSING METHOD THEREOF - A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period. | 08-09-2012 |
20120205520 | IMAGE SENSOR AND SENSING METHOD THEREOF - An image sensor including a pixel array is provided. The pixel array includes R×S sub-pixel arrays. The sub-pixel array includes P×Q pixels. Each pixel includes a photodiode, a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor. The gate of the second transistor is coupled to a row control signal. The second source/drain electrode of the second transistor is coupled to a column control signal. The gate electrode of the third transistor is coupled to a reset signal. The second source/drain electrode of the third transistor is coupled to a column voltage reset signal. The gate electrode of the fifth transistor is coupled to a row select signal. The sub-pixel array uses the row control signal, the column control signal, the column voltage reset signal, and the row select signal to select an output the sensing signal of one of the pixels. | 08-16-2012 |
20120211640 | IMAGING APPARATUS AND IMAGING SYSTEM - An intermediate member is disposed between a peripheral region and a third region, having been fixed to an imaging plate and a retaining plate. The intermediate member does not extend to between at least a part of a middle region and a forth region, such that a void is provided. The difference between the linear expansion coefficient of the imaging plate and the linear expansion coefficient of the intermediate member is smaller than the difference between the linear expansion coefficient of the retaining plate and the linear expansion coefficient of the intermediate member. | 08-23-2012 |
20120211641 | CONTIGUOUS MICROLENS ARRAY - The present disclosure provides a contiguous microlens array, which consists of a plurality of touching microlenses, wherein the adjacent microlenses are connected to each other to form a contiguous microlens array and curvatures of every angle cross section of each microlens are the same. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto. | 08-23-2012 |
20120211642 | Solid-State Imaging Device - Provided is a solid-state imaging device comprising a plurality of pixel circuits GC having photoelectric conversion characteristics including linear characteristics and logarithmic characteristics on either side of an inflection point. The pixel circuits GC each include a photoelectric conversion element PD which accumulates a signal charge by exposing a subject, and a floating diffusion FD which converts the signal charge accumulated by the photoelectric conversion element PD into a voltage signal. The floating diffusion FD is set to have an operating charge that is smaller than a saturation charge of the photoelectric conversion element PD. | 08-23-2012 |
20120211643 | IMAGING SYSTEM AND IMAGING DEVICE - An imaging system includes an A/D converter including a holding unit holding a pixel signal as a voltage level, a comparator comparing the voltage level held with a reference level, a circuit capable of changing the voltage level so as to approach the reference level at first and second rates, wherein the voltage level is changed at the first rate to determine higher bits in accordance with inversion of a relationship between the reference level and the voltage level, after that, the voltage level is changed at the second rate to determine lower bits in accordance with inversion of the relationship between the reference level and the voltage level, and an adjusting unit which adjusts the voltage level during a period until the voltage level is changed at the second rate after determination of the higher bits so that the lower bits and the voltage level hold a linear relationship. | 08-23-2012 |
20120217374 | SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE - Disclosed herein is a solid-state imaging device including: a sensor element having a plurality of pixels each having a photoelectric conversion section; and a logic element attached to the sensor element in such a manner as to be stacked on the sensor element face-to-face and provided with a pad electrode. In a stacked body of the sensor and logic elements, a pad opening is provided above the top surface of the pad electrode facing the sensor element, and a pad periphery guard ring is provided to surround the side portion of the pad opening. The pad periphery guard ring is formed by integrally filling, on the side of the pad opening, an entire trench that is at least as deep as the pad opening with a metal material. | 08-30-2012 |
20120217375 | FIBER LASERS FOR PRODUCING AMPLIFIED LASER PULSES WITH REDUCED NON-LINEARITY - The present application discloses techniques and devices comprising fiber-based chirped fiber Bragg grating for compressing amplified laser pulses. | 08-30-2012 |
20120217376 | IMAGING SIGNAL PROCESSING METHODS AND APPARATUS - Methods and apparatus are provided for performing multiple correlated double sampling (CDS) operations on an imaging pixel, and in some cases on an array of imaging pixels, during a single integration cycle of the pixel(s). The multiple CDS operations may produce multiple CDS values, which may be processed in combination to produce a resulting value substantially free of various types of noise. The CDS operations may be performed using a CDS circuit including a single-ended charge amplifier having an input capacitor. The charge amplifier may also include a variable capacitance providing a variable gain. The variable capacitance may be provided by a feedback capacitor. | 08-30-2012 |
20120217377 | OPTIMIZED LIGHT GUIDE ARRAY FOR AN IMAGE SENSOR - An image sensor has a plurality of pixels in a pixel array. Each pixel includes a photoelectric conversion unit below an insulating layer and a light guide to transmit light to the photoelectric conversion unit. Across five or more pixels arrayed in a direction, the light guides have a spacing between them that varies non-monotonically across the five or more pixels. A width of the light guide and/or a horizontal pitch between consecutive light guides may vary non-monotonically across same. A light guide of a pixel that detects light of shorter wavelengths only may be narrower than a light guide of another pixel that detects light of longer wavelengths. A color filter may be coupled to the light guide. A width of a gap between consecutive color filters may vary non-monotonically across same. A pitch between the gaps may vary non-monotonically across same. | 08-30-2012 |
20120217378 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixels for converting analog image signals from the pixels into digital signals including a higher digit bit and a lower digit bit in time series. The A/D converter includes a first holding unit for holding the higher digit bit of the digital signal, a second holding unit for holding the lower digit bit of the digital signal, a third holding unit for holding the digital signal from the first holding unit, and a fourth holding unit for holding the digital signal from the second holding unit. A first pair including the first and third holding units, and a second pair including the second and fourth holding units are arranged in a direction along the column of the two-dimensional array of pixels. | 08-30-2012 |
20120217379 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus includes a reference signal generating circuit for supplying, commonly to the plurality of A/D conversion circuits, at least two reference signals of which signal levels change toward different directions of electric potential, and the A/D conversion circuit includes an amplifier; an input capacitor having one terminal receiving the analog signal and the reference signal supplied from the reference signal generating circuit, and the other terminal connected to one input terminal of the amplifier; a feedback capacitor connected between the one input terminal and an output terminal of the amplifier; a comparator for comparing, with a comparing level, an output from the output terminal of the amplifier; and a connection capacitor having one terminal connected to the output terminal of the amplifier, and the other terminal connected to one input terminal of the comparator. | 08-30-2012 |
20120217380 | SOLID-STATE IMAGE SENSING DEVICE, METHOD FOR READING SIGNAL OF SOLID-STATE IMAGE SENSING DEVICE, AND IMAGE PICKUP APPARATUS - An image sensor including a pixel array having vertical signal lines, each interconnected to one of columns of the pixel array, and a column processor including a unit readout circuit provided for each of sets of a predetermined number of columns. The unit readout circuit includes input switches, each connected to a corresponding one of the vertical signal lines and being sequentially turned on and off, an input capacitor having one end commonly connected to the input switches, a reference switch for selectively providing a reference voltage to the input capacitor, an operational amplifier connected to the other end of the input capacitor, a reset switch for selectively providing a short-circuit between input and output ends of the operational amplifier, and a feedback circuit provided for each of the columns and including a feedback switch and a feedback capacitor connected in series between the two ends of the operational amplifier. | 08-30-2012 |
20120223214 | Light Guided Pixel - A light guided pixel having a guide layer and a light detector layer. The guide layer has a light guide. The light detector layer has a light detecting element that receives light channeled by the light guide. The light guide may include a filter for channeling emissions to the light detecting element. | 09-06-2012 |
20120223215 | CMOS IMAGE SENSOR WITH WIDE DYNAMIC RANGE - The present invention relates a CMOS (Complementary Metal Oxide Semiconductor) image sensor capable of improving dynamic range by using an additional driver transistor. The CMOS image sensor according to the present invention has a pixel array which has a plurality of unit pixels each of which includes a photodiode and a fist transistor to act as a source follower buffer amplifier to amplify photogenerated charges accumulated in the photodiode. Also, the CMOS image sensor includes a second transistor for a buffer amplifier to amplify and output a gate input voltage in the unit pixel, wherein an output signal of the first transistor is applied to a gate of the second. | 09-06-2012 |
20120228473 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - There is provided a solid-state imaging device including a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and a second film which is formed on the light shielding region and in which at least one layer or more of layers having a negative fixed charge are laminated, in which the number of layers formed in the first film is different from the number of layers formed in the second film. | 09-13-2012 |
20120228474 | SOLID-STATE IMAGING DEVICE - While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor and a pixel amp transistor by adjacent cells in sharing pixel units. Further, it is possible to perform layout setting for the floating diffusions such that parasitic capacitances between the floating diffusions are equal to each other. It is possible to prevent step-like noise from occurring among the pixels while improving sensitivity. | 09-13-2012 |
20120228475 | Talbot Imaging Devices and Systems - Talbot imaging systems comprising a Talbot element, a phase gradient generating device, a light detector, and a processor. The Talbot element repeats a Talbot image at a distance from the Talbot element. The phase gradient generating device scans the Talbot image at a plane at the distance from the Talbot element by incrementally changing a phase gradient of a light field incident the Talbot element. As the Talbot image is scanned, the light detector captures time varying data associated with light altered by an object located at the distance from the Talbot element. The processor reconstructs an image of the object based on the time-varying light data. | 09-13-2012 |
20120228476 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device according to the present invention includes a pixel cell having a photodiode, a charge detection unit, an amplification transistor, a transfer transistor which transfers a signal charge to the charge detection unit in accordance with a transfer control signal, and a reset transistor which resets the charge detection unit in accordance with a reset control signal; a signal processing circuit which receives a pixel reset potential of the charge detection unit, and a pixel signal potential corresponding to the signal charge transferred to the charge detection unit; a charge pump circuit which steps up or steps down a potential of at least one of the transfer control signal and the reset control signal in accordance with a driving clock signal; and a control logic circuit which causes the driving clock signal to be stopped during a pixel reading time period. | 09-13-2012 |
20120235020 | CLOCK GATED POWER SAVING SHIFT REGISTER - A gated-clock shift register including a series of clocked flip-flops with preceding outputs connected to subsequent inputs as a horizontal digital shift register. Each flip-flop (or other state holding device) includes a clock buffer between the respective flip-flop's clock, and the global clock. Each clock buffer propagates the clock signal when it determines the associated flip-flop will have a state change during that clock cycle (e.g., via an XOR of the flip-flops input and output signals). In the absence of a state change, that buffer does not propagate the clock signal, essentially only clocking the relevant flip-flops. Further, the clock buffer may be implemented with only NMOS devices (or alternatively, only PMOS devices), which offers power savings over an otherwise required CMOS implementation. | 09-20-2012 |
20120235021 | SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, ELECTRONIC APPLIANCE, AND METHOD OF DRIVING THE SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a device portion in which unit constituent elements, each of which includes a charge detection unit detecting a charge that is generated on the basis of changes in physical information and a transfer unit transferring a signal charge detected by the charge detection unit, are arranged in a predetermined direction; and a supplied voltage control portion capable of transferring a part of the charge detected by the charge detection unit through supplying of a control voltage for suppressing blooming to the transfer unit and capable of transferring the signal charge detected by the charge detection unit through supplying of a first control voltage that is different from the control voltage for suppressing the blooming to the transfer unit. | 09-20-2012 |
20120235022 | SOLID-STATE IMAGING DEVICE, DRIVE METHOD OF SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device that includes: a pixel array section configured by an array of a unit pixel, including an optoelectronic conversion section that subjects an incoming light to optoelectronic conversion and stores therein a signal charge, a transfer transistor that transfers the signal charge stored in the optoelectronic conversion section, a charge-voltage conversion section that converts the signal charge provided by the transfer transistor into a signal voltage, and a reset transistor that resets a potential of the charge-voltage conversion section; and voltage setting means for setting a voltage of a well of the charge-voltage conversion section to be negative. | 09-20-2012 |
20120235023 | Solid-State Image-Sensing Device and Camera Provided Therewith - By feeding an appropriate voltage as a signal φTX to a transfer gate TG, a MOS transistor T | 09-20-2012 |
20120241590 | Method for Assembly of Spectroscopic Filter Arrays Using Biomolecules - Spectroscopic filter arrays and methods for making spectroscopic filter arrays are provided. The arrays are formed using a dispersion of filter particles having selected moieties attached to the surface of the particles and a microarray having complementary moieties formed in an array on a substrate, such that each filter particle is attached to a selected region of the microarray. The moiety on the substrate may be RNA or DNA or other molecule. The substrate may be a surface of a photodetector array, a transparent plate that may be placed in registration with the photodetector or a stamp used to transfer the filter array to a photodetector array. | 09-27-2012 |
20120241591 | PUMPED PINNED PHOTODIODE PIXEL ARRAY - The present invention relates to a pumped pixel that includes a first photo-diode accumulating charge in response to impinging photons, a second photo-diode and a floating diffusion positioned on a substrate of the pixel. The pixel also includes a charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, where the charge barrier temporarily blocks charge transfer between the first photo-diode and the second photo-diode. Also included is a pump gate positioned on the substrate adjacent to the charge barrier. The pump gate pumps the accumulated charge from the first photo-diode to the second photo-diode through the charge barrier in response to a pump voltage applied by a controller. Also included is a transfer gate positioned on the substrate between the second photo-diode and the floating diffusion. The transfer gate transfers the pumped charge from the second photo-diode to the floating diffusion in response to a transfer voltage applied by a controller. | 09-27-2012 |
20120241592 | Sensing pixel structure for generating sensed image with uniform resolution and light sensor - A sensing pixel structure for generating a sensed image with uniform resolution is applied in a light sensor. The sensing pixel structure includes a plurality of first sensing pixels and a plurality of second sensing pixels. The location of the plurality of first sensing pixels corresponds to a center region of a lens. Each of the plurality of first sensing pixels has a first pixel area. The location of the plurality of second sensing pixels corresponds to the peripheral region of the lens. Each of the plurality of second sensing pixels has a second pixel area. The first pixel area is larger than the second pixel area, so that number of the sensing pixels corresponding to the peripheral region of the lens is larger than that corresponding to the center region of the lens. Therefore, the light sensor generates the sensed image with uniform resolution. | 09-27-2012 |
20120241593 | IMAGE CAPTURING UNIT AND IMAGE CAPTURING DEVICE - An image capturing unit includes: a glass substrate having a first surface and a second surface on an opposite side to the first surface, with a first wiring pattern being provided upon at least the first surface; an image sensor that is electrically connected to the first wiring pattern, and that is mounted upon the first surface of the glass substrate; and a piezoelectric element that is disposed upon the first surface or upon the second surface, and that is electrically connected to the first wiring pattern. | 09-27-2012 |
20120241594 | IMAGE SENSOR WITH DOUBLE INTEGRATION TIME AND CONDITIONAL SELECTION - An image sensor for gathering images at one and the same time at low illumination level and at high illumination level is described. The sensor operates with a double integration time at each frame. Two successive charge transfers from a photodiode to a storage node are performed, the first after a first duration, the second after a second duration different from the first. The potential of the storage node after the first transfer of charge is sampled in a first capacitor of the reading circuit. The potential after a reinitialization of the storage node is sampled in a second capacitor. A level of potential taken after the second transfer is conditionally resampled in the first capacitor. The condition of the resampling is a condition of signal level after the first transfer. This level is applied to the differential amplifier of a ramp-type converter for a short duration of ramp. | 09-27-2012 |
20120241595 | IMAGE SENSOR WITH VERY HIGH DYNAMIC RANGE - A image sensor includes active pixels for gathering images at very high and very low luminance level. Each pixel includes at least one photodiode, a charge storage node, an electron multiplication amplification structure, a unit for transferring electrons from the photodiode to the structure, a unit for transferring electrons from the amplification structure to the storage node after multiplication, a transistor for reinitializing the potential of the storage node. The pixels are read by a reading circuit which samples the potential of the charge storage node after reinitialization and after transfer of the electrons into the storage node and which provides a corresponding illumination measurement. The sensor furthermore includes a unit for carrying out the integration of charge in two different durations in the course of one and the same frame, and for giving the amplification structure multiplication factors different to the charge integrated in the course of these durations. | 09-27-2012 |
20120241596 | System for and Method of Performing Multi-Technique Imaging - A system for and method of performing multi-technique imaging are disclosed. Such multi-technique imaging system includes a surface for supporting a specimen and at least two illumination sources for producing light radiation. The system also includes a plurality of reflective and refractive devices arranged to direct at least part of the light radiation from each of the at least two illumination sources to the surface such that the at least part of the light radiation from each of the at least two illumination sources illuminates substantially the same area on the surface. The system also includes a sensor configured to receive light radiation from the at least two illumination sources reflected by the specimen and/or that pass by the specimen. The system also includes a power source configured to power the at least two illumination sources and the sensor. | 09-27-2012 |
20120241597 | Hot Spot Correction in a Compressive Imaging System - A compressive imaging system for optimizing dynamic range during the acquisition of compressed images. A light modulator modulates incident light with spatial patterns to produced modulated light. A light sensing device generates an electrical signal representing intensity of the modulated light over time. The system amplifies a difference between the electrical signal and an adjustable baseline voltage and captures samples of the amplified signal. The adjustable baseline voltage is set to be approximately equal to the average value of the electrical signal. A compressive imaging system for identifying and correcting hot spot(s) in the incident light field. Search patterns are sent to the light modulator and the corresponding samples of the electrical signal are analyzed. Once the hot spot is located, the light modulating elements corresponding to the hot spot may be turned off or their duty cycle may be reduced. | 09-27-2012 |
20120248288 | DUAL WELL READ-OUT INTEGRATED CIRCUIT (ROIC) - Embodiments of the invention describe solutions directed towards having a single camera capable of capturing high speed laser return pulses for a target, as well as provide imaging information on the background of the target. This capability is enabled by having a read-out integrated circuit (ROIC) capable of extracting both types of information from a pixel of a focal plane array (FPA). | 10-04-2012 |
20120248289 | IMAGING DEVICE, IMAGING METHOD, AND COMPUTER READABLE STORAGE MEDIUM - There is provided an imaging device that has: an image pick-up element that picks-up an image of a subject and transfers an image pick-up signal that has been picked-up; cooling unit that cools the image pick-up element; a temperature sensor that detects a temperature of the image pick-up element; pulse width modulation control unit that controls the cooling unit by a pulse width modulation signal, on the basis of the temperature detected by the temperature sensor; and transfer control unit that, on the basis of a duty ratio of the pulse width modulation signal, controls transfer of the image pick-up signal such that transfer of the image pick-up signal is suspended at a timing that includes at least one of a rise and a fall of the pulse width modulation signal. | 10-04-2012 |
20120248290 | SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device comprises a unit pixel containing a photoelectric conversion element for detecting a light to generate photoelectrons and at least one electrode for forming an MOS diode structure, a first contact point connected to a first voltage supply for supplying a first voltage to the electrode, a second contact point connected to a second voltage supply for supplying a second voltage higher than the first voltage to the electrode, a first capacitor disposed between the first and second contact points, a change-over switch connected to one of the first and second contact points to selectively switch a voltage applied to the electrode to the first voltage or the second voltage, and pixel drive circuits for driving the change-over switch, thereby alternately applying the first voltage and the second voltage to the electrode to generate, hold, transfer, reset, or discharge the photoelectrons. | 10-04-2012 |
20120248291 | UNIT PIXEL, SOLID-STATE IMAGE SENSING DEVICE, AND METHOD FOR SUMMING UNIT PIXEL SIGNALS - A unit pixel has a light receiving device containing a photoelectric conversion element for detecting a light to generate photoelectrons. The light receiving device contains a plurality of photoelectron distributors, which each have a first transfer unit for transferring the photoelectrons generated in the photoelectric conversion element, a photoelectron hold unit for temporarily holding the photoelectrons generated in the photoelectric conversion element, a second transfer unit for transferring the photoelectrons held in the photoelectron hold unit, and a floating diffusion layer for storing the transferred photoelectrons and converting the photoelectrons to a voltage. The unit pixel contains a reset transistor for resetting the potential of the floating diffusion layer to a reference potential and a photoelectron discharger for discharging the photoelectrons generated in the photoelectric conversion element. | 10-04-2012 |
20120248292 | LENS-FREE WIDE-FIELD SUPER-RESOLUTION IMAGING DEVICE - A system for imaging objects within a sample includes an image sensor and a sample holder configured to hold the sample, the sample holder disposed adjacent to the image sensor. The system further includes an illumination source configured to scan in two or three dimensions relative to the sensor array and illuminate the sample at a plurality of different locations. The illumination source may include, by way of example, LEDs, laser diodes, or even a screen or display from a portable electronic device. The system includes least one processor configured to reconstruct an image of the sample based on the images obtained from illumination source at the plurality of different scan positions. | 10-04-2012 |
20120248293 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a pixel region including photoelectric conversion units, FDs, and transfer transistors, reset transistors, amplifier transistors, and a reference voltage supply line used to supply reference voltages to the photoelectric conversion units. In the device, the pixel region and the reference voltage supply line are disposed on a first semiconductor substrate, and at least the reset transistors or the amplifier transistors are disposed on a second semiconductor substrate. Furthermore, power supply lines used to supply voltages to the reference voltage supply line are disposed on the second semiconductor substrate. The device further includes second electric connection units which electrically connect the reference voltage supply line to the power supply line. The first electric connection units are disposed in the pixel region whereas the second electric connection units are disposed outside the pixel region. | 10-04-2012 |
20120256077 | High dynamic range imager circuit and method for reading high dynamic range image - The present invention discloses a high dynamic range imager circuit and a method for reading high dynamic range image with an adaptive conversion gain. The high dynamic range image circuit includes a variable capacitor. The capacitance of the variable capacitor is adjusted according to sensed light intensity or by internal feedback control, to adaptively adjust the conversion gain of the high dynamic range image circuit as it reads a signal which relates to a pixel image sensed by an image sensor device. In each cycle, the signal can be read twice or more with different dynamic ranges, to enhance the accuracy of the signal. | 10-11-2012 |
20120256078 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS USING THE SAME - Provided is a solid-state imaging device including: a pixel array section that pixels which detect a physical quantities are arranged in two dimensions of matrix; an AD converting section that performs AD (Analog-Digital) conversion for a plurality of channels of analog pixel signals which are read-out from the pixel array section; and a control section that sets quantized units AD-converted by the AD conversion section according to a gain setting of the unit pixel signal, wherein the control section determines the grayscale number of digital outputs AD-converted for at least one channel of the unit pixel signals according to the gain setting of the pixel signal. | 10-11-2012 |
20120256079 | CIRCUIT AND METHOD FOR AN ACTIVE IMAGE SENSOR - An array of active pixel sensors and an array of sampling circuits of an active image sensor are divided into sub-arrays in operation so that a sampling time and a readout time in a frame overlap to each other to shorten the total readout time of a frame. In an embodiment, a first sub-array of sampling circuits samples a first sub-array of active pixel sensors during a readout circuit reads out sampled signals from a second sub-array of sampling circuits, or the second sub-array of sampling circuits samples a second sub-array of active pixel sensors during the readout circuit reads out sampled signals from the first sub-array of sampling circuits. | 10-11-2012 |
20120261549 | PIXEL, PIXEL ARRAY, AND IMAGE SENSOR INCLUDING PIXEL ARRAY - Provided are a pixel, a pixel array, and an image sensor including the pixel array. The pixel includes a photoelectric converter, a capacitor, a variable capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The variable capacitor is connected to the capacitor, and has capacitance varied according to a potential of the capacitor. The switching element outputs the potential of the capacitor. | 10-18-2012 |
20120261550 | Optical Lens Assembly With Filter Member For Image Taking - An optical lens assembly with a filter member for image taking, sequentially arranged from an object side to an image side along an optical axis, comprises: a filter member and a lens assembly. The lens assembly is set at the object side of the filter member. The lens assembly comprises at least three lens elements with refractive powers, wherein at least two lens elements are made of plastic, and have at least one aspheric object-side surface or image-side surface. By such arrangements, the optical lens assembly with a filter member for image taking can have good chromatic aberration correction and reduce the total length for applications to electronic products such as cameras and mobile phones requiring high resolution. | 10-18-2012 |
20120261551 | OPTICAL COMPONENT ARRAY HAVING ADJUSTABLE CURVATURE - Provided are devices, and related methods, for controlling curvature of an array of optical components on, embedded, or partially embedded in, a deformable substrate. The array of optical components, in an aspect, comprises a deformable substrate having a contact surface and an array of mechanically interconnected optical components supported by the contact surface. An actuator is operably connected to the contact surface, wherein the actuator variably controls a curvature of said contact surface. The contact surface may have a curvature that spans concave to convex, which is tunable. In an aspect, the array of optical components is part of on optical device, such as a camera with a continuously adjustable zoom whose focus is maintained by adjusting a photodetector array curvature. In an aspect, the method is adjusting the curvature of a substrate that supports the array of optical components by applying a force to the substrate. | 10-18-2012 |
20120261552 | SOLID-STATE IMAGING APPARATUS AND ITS DRIVING METHOD - A solid-state imaging apparatus has: output lines connected commonly to each column of a plurality of pixels; a reference signal generating circuit for generating a reference signal voltage changing in a ramp shape; a comparator for comparing the reference signal voltage with an analog voltage on the output line; and a counter unit for counting, as a digital value, a period from a start of the comparing of the comparator until an inversion of an output signal of the comparator, wherein the reference signal generating circuit sets the reference signal voltage into an offset voltage, thereafter, an input terminal of the comparator is reset, thereafter, the reference signal generating circuit resets the reference signal voltage from the offset voltage into a initial voltage, and thereafter, the reference signal generating circuit generates the ramp-shaped reference signal voltage from the initial voltage, so that the comparator starts the comparing. | 10-18-2012 |
20120261553 | DETECTOR PIXEL SIGNAL READOUT CIRCUIT AND AN IMAGING METHOD THEREOF - A pixel readout circuit for use with an imaging pixel array, comprising: an input channel for receiving an image signal corresponding to electrical output of a photosensitive element of the pixel; and an electronic circuit interconnected between said input channel and an output readout utility. The electronic circuit comprises a capacitive unit, and a single analyzer. The capacitive unit is controllably linked to input channel for accumulating charge corresponding to received intensity generated by said pixel during a single frame period, and is connected to output readout utility. The signal analyzer unit is controllably linked to input channel and connected to output readout utility, and is configured for analyzing at least a part of said image signal by determining change in amount of accumulated charge corresponding to the received intensity, and upon detecting that the amount of charge satisfies a predetermined condition generating data indicative of a detected event. | 10-18-2012 |
20120261554 | SEMICONDUCTOR IMAGE SENSOR MODULE, METHOD FOR MANUFACTURING THE SAME AS WELL AS CAMERA AND METHOD FOR MANUFACTURING THE SAME - A semiconductor image sensor module | 10-18-2012 |
20120261555 | METHOD OF OPERATING RIPPLE COUNTER, IMAGE SENSOR HAVING RIPPLE COUNTER, METHOD OF OPERATING IMAGE SENSOR, AND ANALOG-TO-DIGITAL CONVERTER OF IMAGE SENSOR - An example embodiment of an image sensor may include a controller and a plurality of up/down ripple counters. The controller may generate a first control signal and a second control signal. Each of the up/down ripple counters may perform a stop operation or a count operation in response to a corresponding one of a plurality of operation control signals generated based on at least in part on the first control signal. The count operation may be an up-count operation or a down-count operation based on the second control signal. The image sensor may also include a plurality of memory chains. Each of the memory chains may receive a count value output from the up/down counters and may shift the received count value in response to a third control signal and a fourth control signal output from the controller. | 10-18-2012 |
20120261556 | IMAGE SENSOR IC AND CONTACT IMAGE SENSOR USING SAME - An image sensor IC includes: light receiving elements disposed linearly adjacent to each other on a surface of a quadrilateral semiconductor substrate having opposite parallel sides, and disposed oblique to at least one set of opposite sides from a predetermined position on one side thereof to be opposed in the semiconductor substrate to a predetermined position on the other side thereof; and interpolation elements provided at one end portion or both end portions of the one set of opposite sides on a side of a region in which an angle formed by the linearly disposed light receiving elements and the set of opposite sides is obtuse, the interpolation elements having an oblique angle to the linearly disposed light receiving elements and receiving light on an outer side of the linearly disposed light receiving elements. | 10-18-2012 |
20120267511 | Image sensor with hybrid heterostructure - An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process to optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost. By combining the two layers into a stacked structure, the top layer (and any intermediate layer(s)) acts to optically shield the lower layer, thereby allowing charge to be stored and shielded without the need for a mechanical shutter. | 10-25-2012 |
20120267512 | VIGNETTED PLANAR SPATIAL LIGHT-FIELD SENSOR AND SPATIAL SAMPLING DESIGNS FOR FAR-FIELD LENSLESS SYNTHETIC IMAGING VIA SIGNAL PROCESSING IMAGE FORMATION - Methods of implementing light field sensors for lensless synthetic imaging is provided. Relatively tall and short structures are fabricated, wherein the short structures comprise light sensing capabilities. The tall structures and short structures are arranged in an array to create an array of vignetted light sensors that partition an incoming light field into a plurality of vignetted light fields, each uniquely associated with a particular light sensor. Each light sensor generates a measurable electrical quantity responsive to the associated vignetted light field, and the collective measurable electrical quantities are responsive to incoming light field. The short structures can comprise photodiodes, LEDs, or OLEDs, and the resulting light field sensor can respond to color. Tall structures can comprise electronic components, LEDs, OLEDS, or OLETs. In an example implementation, tall structures in the array are light-emitting and act as a light-emitting visual display which further comprises an array of vignetted light sensors. | 10-25-2012 |
20120273651 | DUAL CONVERSION GAIN PIXEL METHODS, SYSTEMS, AND APPARATUS - Dual conversion gain pixel methods, system, and apparatus are disclosed. Dual conversion gain may be obtained by configuring an active pixel having a storage node, a first connection region, a second connection region, and a capacitor coupled between the storage node and the second connection region to introduce a first conversion gain by connecting the first connection region to a power source and connecting the second connection region to a current bias source and reconfiguring the active pixel to introduce a second conversion gain by connecting the second connection region to the power source and connecting the first connection region to the current bias source. | 11-01-2012 |
20120273652 | SYSTEMS AND METHODS FOR IMAGE SENSING - Systems and methods for image sensing are disclosed. An image sensor includes a pixel having an active region and a plurality of reflective interfaces. The active region is configured to convert light absorbed by the pixel into an electrical signal. The plurality of reflective interfaces cause the light absorbed by the pixel to resonate within the active region. A method for converting absorbed light into an electrical signal with an image sensor includes absorbing light with the pixel of the image sensor, and reflecting the absorbed light with a plurality of reflective interfaces embedded in the pixel to generate a resonance within the active region. | 11-01-2012 |
20120273653 | IMAGE SENSOR ARRAY FOR THE BACK SIDE ILLUMINATION WITH JUNCTION GATE PHOTODIODE PIXELS - The present invention relates to a junction gate photo-diode (JGP) pixel that includes a JGP for accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also included is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also included is a pinned barrier (PB) positioned on the substrate between the JGP and the FD, the PB temporarily blocks charge transfer between the JGP and the FD. The accumulated charge is transferred from the JGP to FD by applying a control voltage to the JGP control terminal. | 11-01-2012 |
20120273654 | IMAGE SENSOR ARRAY FOR BACK SIDE ILLUMINATION WITH GLOBAL SHUTTER USING A JUNCTION GATE PHOTODIODE - The present invention provides a junction gate photo-diode (JGP) pixel that includes a JGP accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also includes is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also includes is a pinned barrier (PB) and a storage gate (SG) positioned on the substrate between the JGP and the FD. The PB temporarily blocks charge transfer between the JGP and the FD, and the SG stores the accumulated charge from the JGP, and transfers the stored charge to the FD for readout. | 11-01-2012 |
20120273655 | IMAGE SENSING APPARATUS AND CONTROL METHOD THEREOF - An image sensing apparatus which has an effective pixel portion and a light-shielded pixel portion which is arranged at an end of the effective pixel portion, comprises a detection unit which detects a column offset component for each column by performing weighted average cyclic calculation on the column at the light-shielded pixel portion; a correction unit which corrects a column offset superimposed at the effective pixel portion by performing cyclic calculation while a plurality of frames inherit the detected column offset component, and subtracting a column offset component calculated in every cyclic calculation from an output signal of the effective pixel portion; and a control unit which divides the light-shielded pixel portion into a plurality of blocks for each pixel region to be read out by one frame, and controls a block to be read out for each frame. | 11-01-2012 |
20120273656 | IMAGING APPARATUS - An image sensor is positioned at a fixing member and adheres to and is fixed to the fixing member by pouring an adhesive into the opening. The opening is formed in a shape that extends in a short-side direction of the image sensor at a position corresponding to a substantially central portion of the image sensor in a long-side direction. The opening is formed such that an opening width on a side not facing the image sensor is larger than an opening width on a side facing the image sensor. | 11-01-2012 |
20120273657 | IMAGING DEVICE AND DRIVING METHOD FOR SOLID-STATE IMAGE SENSOR - An imaging device comprises a solid-state image sensor including a plurality of unit pixels, and a driving unit. Each unit pixel includes a photo-electric converter that converts incident light into a signal charge, a holding unit that temporarily holds the signal charge obtained by the photo-electric converter, a first transfer gate arranged between the photo-electric converter and the holding unit, that transfers the signal charge to the holding unit, a charge-voltage converter that converts the signal charge into a voltage signal, and a second transfer gate arranged between the holding unit and the charge-voltage converter, that transfers the signal charge to the charge-voltage converter, and that is in a non-conductive state in the case where an image capturing operation is performed in the photo-electric converter. The driving unit drives the solid-state image sensor so as to supply three or more mutually different electric potentials to the first transfer gate. | 11-01-2012 |
20120280108 | SYSTEMS AND METHODS FOR ADDING OR SUBTRACTING PIXELS - A pixel array including circuitry for combining charges accumulated by individual pixels in the array enables addition and/or subtraction of individual pixel values, prior to their digitization, in the pixel array. | 11-08-2012 |
20120280109 | METHOD, APPARATUS AND SYSTEM TO PROVIDE CONDUCTIVITY FOR A SUBSTRATE OF AN IMAGE SENSING PIXEL - Techniques for promoting conductivity in a substrate for a pixel array. In an embodiment, an isolation region and a dopant well are disposed within an epitaxial layer adjoining the substrate, where a portion of the dopant well is between the substrate and a portion of the isolation well. In another embodiment, a contact is further disposed within the epitaxial layer, where a portion of the isolation region surrounds a portion of the contact. | 11-08-2012 |
20120280110 | Compact Digital Pixel for a Focal Plane Array - According to one embodiment of the present disclosure, a focal plane array is provided. The focal plane array may comprise a plurality of pixels. Each pixel may include one or more capacitors operable to collect charge corresponding to an amount of light received at the respective pixel. Each pixel may further include a present state register operable to store a present state value of the respective pixel. The present state value indicates an amount of charge collected by the one or more capacitors of the respective pixel. The focal plane array may further include a logic circuit coupled to each present state register of the plurality of pixels. The logic circuit is operable to compute a next state value of each pixel based on the present state value of the respective pixel. The logic circuit may be time shared by the pixels. | 11-08-2012 |
20120280111 | Scanning Multispectral Telescope Comprising Wavefront Analysis Means - A scanning multispectral telescope comprises an optical architecture arranged so as to focus the image of an object in the vicinity of a photodetection assembly, the area of focus being an image plane. The photodetection assembly comprises a number of parallel rows of photodetectors, each row being dedicated to a particular spectral band, each spectral band being centred on a mean wavelength. The telescope comprises means for acquiring and analyzing the images obtained from the rows of photodetectors using a phase diversity algorithm. Finally, the telescope comprises optical or mechanical means arranged in such a way that at least one of the rows of photodetectors is offset by a fraction of the mean wavelength which corresponds to it on an axis perpendicular to the image plane. | 11-08-2012 |
20120280112 | HIGH DYNAMIC RANGE PIXEL - A high dynamic range pixel ( | 11-08-2012 |
20120286137 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer. | 11-15-2012 |
20120286138 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND SOLID-STATE IMAGING SYSTEM - A solid-state imaging device is configured such that an effective pixel and a reference pixel are connected to first and second signal lines, respectively. The solid-state imaging device includes a difference signal output unit configured to perform difference processing on a signal output from a first amplifying transistor included in the effective pixel and a signal output from a second amplifying transistor included in the reference pixel. The difference signal output unit is provided separately from the first and second amplifying transistors. | 11-15-2012 |
20120286139 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND SOLID-STATE IMAGING SYSTEM - A solid-state imaging device has a configuration for selecting from a plurality of reference pixels at least one reference pixel for outputting a reference signal. | 11-15-2012 |
20120286140 | SOLID-STATE IMAGE PICKUP DEVICE - Dark current from a transfer transistor is suppressed and power-supply voltage in a second semiconductor substrate is lowered. A solid-state image pickup device includes a pixel array, a plurality of common output lines receiving signals read out from a plurality of pixels, a transfer scanning unit sequentially driving the plurality of transfer transistors, a signal processing unit processing the signals output to the common signal lines, and a level shift unit making amplitude of a pulse supplied to a gate of the transfer transistor larger than amplitude of a pulse supplied to a gate of a transistor constituting the signal processing unit. The pixel array and the level shift unit are arranged on a first semiconductor substrate, whereas the plurality of common output lines and the signal processing unit are arranged on a second semiconductor substrate. | 11-15-2012 |
20120286141 | PIXEL WITH REDUCED 1/F NOISE - A pixel is provided, comprising at least one transistor, the pixel being arranged for cycling the at least one transistor between two or more bias states, e.g. inversion and accumulation, during a readout phase. Due to the cycling between the at least two bias states, the correlation over time of the 1/f noise of the readout signals is broken, thus taking multiple samples and applying an operator onto the samples can reduce the effect of the 1/f noise to arbitrary low levels. | 11-15-2012 |
20120286142 | ELECTROMAGNETIC SHIELDING COATING AND LENS MODULE UTILIZING THE SAME - An electromagnetic shielding coating covers a lens coated with an optical coating. A light shielding coating covers the optical coating. The electromagnetic shielding coating covers the light shielding coating. The electromagnetic shielding coating includes a first metal layer containing stainless steel and covering the light shielding coating directly, a second copper layer formed on the first metal layer, and a third metal layer formed on the second copper layer. The third metal layer includes stainless steel and copper. | 11-15-2012 |
20120292483 | ELECTRON-MULTIPLICATION IMAGE SENSOR - This description relates to active-pixel image sensors. Each pixel includes, at the surface of a semiconductor active layer, a photodiode region, a charge storage node and a transfer structure for transferring charges from the photodiode to the storage node after a charge integration time for charges generated by the light in the photodiode. The transfer structure includes a first transfer gate adjacent to the photodiode, a second transfer gate adjacent to the storage node, and an electron-multiplication amplifying structure located between the first and second transfer gates. The amplifying structure includes two separate accelerating gates and an intermediate diode region at a fixed surface potential, located between the two accelerating gates. A succession of alternating high and low potentials is applied to the accelerating gates while the charges are in transit in the transfer structure, before they are transferred to the storage node. | 11-22-2012 |
20120292484 | IMAGE SENSOR - An image sensor for electronic cameras includes a plurality of light-sensitive pixels arranged in rows and columns for generating exposure-dependent pixel signals in an image field. Each pixel includes at least one light-sensitive element to generate electric charge from incident light and a converter transistor to convert a charge into a voltage signal. The pixels form a plurality of pixel groups with at least one common read-out circuit being associated with each pixel group are coupled to the output of the associated converter transistor. An amplifier circuit amplifies the voltage signals from each converter transistor. | 11-22-2012 |
20120292485 | SOLID-STATE IMAGING DEVICE AND AD CONVERSION METHOD - A solid-state imaging device includes an imager including pixels arranged in a matrix, and AD converters, each of which is provided in each pixel column and converts a signal voltage read from one of the pixels located in the column to a digital value. Each of the AD converters includes a comparator and a counter section including a counter circuit, which receives a comparison result of the comparator and includes a first DFF for n bits, and a transfer circuit, which includes a second DFF for n bits holding and outputting a count value of the counter circuit. The second DFFs provided in the columns are coupled in series to form a transfer section transferring the signal voltage which has been digitally converted. | 11-22-2012 |
20120292486 | SOLID-STATE IMAGING ELEMENT HAVING IMAGE SIGNAL OVERFLOW PATH - Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows. | 11-22-2012 |
20120292487 | POSITIVE RESIST COMPOSITION AND METHOD FOR PRODUCING MICROLENS - There is provided a resist composition suitable for forming a microlens which is excellent in transparency, heat resistance, and sensitivity characteristics, excellent in solubility in a developer, and as the result thereof has high resolution. A positive resist composition comprising; a component (A): an alkali-soluble polymer; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; a component (C): a crosslinkable compound of Formula (1): | 11-22-2012 |
20120298841 | SOLID-STATE IMAGE PICKUP APPARATUS - Provided is a back-illuminated solid-state image pickup apparatus having an improved color separation characteristic. A photo detector includes a first photo detector unit and a second photo detector unit disposed deeper than the first photo detector unit with respect to a back surface of a semiconductor substrate, wherein the first photo detector unit includes a first-conductivity-type first semiconductor region where carriers generated through photo-electric conversion are collected as signal carriers. A readout portion includes a first-conductivity-type second semiconductor region extending in a depth direction such that the carriers collected in the first semiconductor region are read out to a front surface of the semiconductor substrate. A unit that reduces the amount of light incident on the second semiconductor region is provided. | 11-29-2012 |
20120298842 | PRODUCTION METHOD OF MICROLENS - A production method of a solid-state imaging device in which microlenses are arranged adjacent to each other on a substrate, includes: a first process of forming first microlenses on a surface of the substrate leaving space therebetween for providing second microlenses; and a second process of applying an overcoating material onto the surface of the substrate on which the first microlenses are formed, drying the overcoating material, exposing the overcoating material to light using a gray scale mask, and developing the exposed overcoating material, so as to form second microlenses in the space between the first microlenses adjacent to each other. | 11-29-2012 |
20120305748 | IMAGING DEVICE WITH VARYING EXPOSURE TIME - Example embodiments disclosed herein relate to an imaging device. The imaging device includes a photosensor and an exposure system or developer. The exposure system or developer controls illumination or exposure of light sensitive elements of the photosensor based on their location within the photosensor. | 12-06-2012 |
20120305749 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a vertical selection circuit that sets an electronic shutter state and a read-out state in time division multiplexing for each selected row of a pixel array unit in which the pixels are arranged in a matrix pattern, a pulse selector circuit that drives the pixels belonging to the selected row in accordance with the electronic shutter state and the read-out state, and a timing generator circuit that controls operational timing of the vertical selection circuit and the pulse selector circuit are included. | 12-06-2012 |
20120305750 | MATRIX IMAGING DEVICE COMPRISING AT LEAST ONE SET OF PHOTOSITES WITH MULTIPLE INTEGRATION TIMES - A method for controlling a pixel may include first and second photosites, each having a photodiode and a charge-transfer transistor, a read node, and an electronic read element, all of which are common to all the photosites. The method may include an accumulation of photogenerated charges in the photodiode of the first photosite during a first period, an accumulation of photogenerated charges in the photodiode of the second photosite during a second period shorter than the first period, a selection of the signal corresponding to the quantity of charges accumulated in the photodiode of a photosite having the highest unsaturated intensity or else a saturation signal, and a digitization of the selected signal. | 12-06-2012 |
20120305751 | Solid-State Image Capture Device - A control part | 12-06-2012 |
20120305752 | SOLID-STATE IMAGING DEVICE, AND IMAGING DEVICE - A solid-state imaging device includes: a column comparison circuit which compares a pixel signal with ramp waves and detects a timing at which the pixel signal and the ramp waves match; a counter circuit which is disposed for each of the pixel columns and measures the timing in the column comparison circuit by being supplied with a clock signal; and M first inverters which are equidistantly connected in series, wherein the counter circuit belongs to one of M groups corresponding to each of the M first inverters disposed in the upper clock stage, the odd-numbered group has second inverters disposed between the output terminal of the first inverter corresponding to the group and the counter circuit of the group, and the even-numbered group has buffers disposed between the output terminal of the first inverter corresponding to the group and the counter circuit of the group. | 12-06-2012 |
20120312963 | IMAGE SENSOR ARRANGEMENT - Each column of pixels in an image sensor array has at least two column bitlines connected to an output of each pixel. A readout input circuit includes first inputs and a second input. Each first input is connected, via a capacitance, to a comparator input node. The second input is connected via a capacitance to the same comparator input node. The first inputs receive, in parallel, an analog signal acquired from the pixels via the column bitlines. The analog signals vary during a pixel readout period and have a first level during a first calibration period and a second level during a second read period with the analog signals being constantly read onto the capacitances during both the first calibration period and the second read period. The comparator compares an average of the signals on the plurality of first inputs to the reference signal. | 12-13-2012 |
20120312964 | IMAGE PICKUP APPARATUS - An image pickup apparatus includes a plurality of pixels each including a read-out node to which an electric charge generated in a photoelectric conversion unit is transferred, an output unit configured to convert the electric charge transferred to the read-out node into a voltage and output the resultant voltage to a signal line, and a switch including a first node electrically connected to the read-out node. Each switch includes a second node different from the first node, and a particular number of second nodes are electrically connected to a common bypass wiring. | 12-13-2012 |
20120312965 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF DRIVING THE SAME - A solid-state image pickup device which includes, on a semiconductor substrate, an image pickup area which includes plural columns of pixels, and plural column amplifier circuits each provided at each column of pixels or at every plural columns of pixels, wherein: each of the column amplifier circuits includes at least two amplifier circuit stages; a preceding amplifier circuit is a variable-gain amplifier circuit and the switchable gains include plural one or more gains; and a subsequent amplifier circuit is capable of amplifying, at one or more gains, the signal amplified at one or more gains in the preceding amplifier circuit. | 12-13-2012 |
20120312966 | RANGE IMAGE SENSOR - Since the accumulation regions fd | 12-13-2012 |
20120318958 | CLOCK GENERATION CIRCUIT AND IMAGING DEVICE - A clock generation circuit includes first and second logic circuits and a switch circuit. The first logic circuit has a first circuit threshold value lower than a circuit threshold value of a front-stage circuit, receives an input clock output from the front-stage circuit, and outputs a first output signal in accordance with a logic state of the input clock and the first circuit threshold value. The second logic circuit has a second circuit threshold value higher than the circuit threshold value of the front-stage circuit, receives the input clock output from the front-stage circuit, and outputs a second output signal in accordance with the logic state of the input clock and the second circuit threshold value. The switch circuit receives the first and second output signals and outputs, as an output clock, one of first and second voltages corresponding to different logic states. | 12-20-2012 |
20120318959 | IMAGING DEVICE, DRIVING METHOD AND ELECTRONIC APPARATUS - Disclosed herein is an imaging device including: a plurality of pixels disposed to form a matrix having pixel rows, the pixels including a pixel electrode formed on a silicon substrate for one of the pixels by being separated away from another pixel electrodes formed for one of the other pixels, a photoelectric conversion film formed on the pixel electrode, and an opposite electrode formed on the photoelectric conversion film; and a driving section configured to apply an electric potential to the photoelectric conversion film on each of the pixel rows at least having read timings different from each other with a predetermined timing outside an exposure period of the pixels in a direction opposite to that of an electric potential applied to the photoelectric conversion film during the exposure period of the pixels. | 12-20-2012 |
20120318960 | Image Sensor and Method for Packaging Same - An image sensor includes a ceramic base with a cavity therein, the ceramic base including a sidewall forming a conductive layer embedded therein. A protrusion extends from the sidewall toward the center of the cavity. An infrared filter is mounted on the upper surface of the protrusion with a most upper surface of the infrared filter not higher than the upper surface of the ceramic base; and an image unit is mounted on the lower surface of the protrusion with a most lower surface not lower than the lower surface of the ceramic base. | 12-20-2012 |
20120318961 | IMAGE SENSOR MODULE - An image sensor module includes: a sensor IC having light receivers arranged in a main scanning direction; a lens unit configured to form an image on the sensor IC with light transferred from a read target; a first light source unit having a first output surface extending along the main scanning direction and outputting a first linear light extending along the main scanning direction from the first output surface toward the read target, the first output surface being placed at a position spaced apart from the lens unit in a sub-scanning direction; and a second light source unit having a second output surface extending along the main scanning direction and outputting a second linear light extending along the main scanning direction from the second output surface toward the read target, the second output surface being placed between the lens unit and the first output surface in the sub-scanning direction. | 12-20-2012 |
20120318962 | BACKSIDE ILLUMINATION SOLID-STATE IMAGE PICKUP DEVICE - According to one embodiment, an image pickup device includes a semiconductor substrate and first and second color filters. The semiconductor substrate includes a first principal surface and a second principal surface lying opposite the first principal surface. The first color filter has a first bottom surface lying on the second principal surface side and a first top surface lying opposite the first bottom surface. The second color filter has a second bottom surface lying on the second principal surface side and a second top surface lying opposite the second bottom surface. The first color filter includes a spectroscopic filter configured to allow light having passed through the semiconductor substrate to pass through. In a cross section perpendicular to the second principal surface, the first bottom surface is longer than the first top surface, and the second bottom surface is shorter than the second top surface. | 12-20-2012 |
20120326008 | PHOTODETECTING IMAGER DEVICES HAVING CORRELATED DOUBLE SAMPLING AND ASSOCIATED METHODS - Transistor pixel devices, imagers, and associated methods are provided. In one aspect, a transistor pixel device includes a photodiode coupled to a floating diffusion region (FD), a storage node (SN), and a power supply, wherein the FD is coupled between the photodiode and the power supply. The device also includes a first global transfer transistor coupled between the photodiode and the FD for gating between the photodiode and the FD and a second global transfer transistor coupled between the FD and the SN for gating between the FD and the SN. A global reset select transistor is coupled between the FD and the power supply, wherein an open state of the global reset select transistor prevents accumulation of electrical charge at the photodiodes. A source follower transistor is coupled to the FD and to the power supply, where the source follower is operable to receive electrical signal from the FD. | 12-27-2012 |
20120326009 | PLASMONIC LIGHT SENSORS - An electronic device may be provided a plasmonic light sensor. Plasmonic light sensors may include arrays of plasmonic image pixels that detect evanescent electron density waves, or plasmons, generated in the plasmonic image pixel through an interaction with incoming light. Plasmonic image pixels may include microlenses that focus the light onto conducting wires in the plasmonic image pixel. Plasmons generated on the surface of the conducting wire may propagate along the conducting wire. Detector circuitry may be coupled to the wire on which the plasmons propagate to detect the light through detection of the evanescent electron density wave. Detector circuitry may include a biasing component for biasing a photodiode such that a small amount of light results in an avalanche of charge, or a sudden increase in current, produced in the detector circuitry in response to the evanescent wave. | 12-27-2012 |
20120326010 | SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING THE SAME, AND ELECTRONIC SYSTEM - A solid-state imaging device includes: a pixel array section including an array of pixels in a two-dimensional matrix, the pixels including a photoelectric conversion section configured to generate signal charges in accordance with an amount of light, a discharge section configured to receive an overflow of signal charges exceeding a saturation amount of charges during an exposure period, at least a first charge accumulation section configured to receive the signal charges generated by the photoelectric conversion section after the exposure period, and a second charge accumulation section configured to receive the signal charges exceeding the saturation amount of charges, and a plurality of pixel transistors reading the signal charges; and a scanning section configured to scan the pixels so that accumulation periods for all the pixels are simultaneous in an accumulation period of the signal charges, and to selectively scan the pixels in sequence. | 12-27-2012 |
20120326011 | IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS, MANUFACTURING METHOD, AND INSPECTION APPARATUS - An image pickup device includes a plurality of photodiodes, a photoelectric conversion part, and structures. The photoelectric conversion part is configured to convert light incident on the plurality of photodiodes into an electric signal. The structures each have a plano-convex shape and are formed to cover the plurality of photodiodes, the structures each having a concave part at a center of the plano-convex shape, and regions other than the concave part on each surface of the structures, the regions being covered by a light reflecting material. | 12-27-2012 |
20130001399 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a pixel array unit that includes pixels configured to accumulate photo-electric converted charges and disposed in a matrix, and a vertical drive circuit that collectively drives the pixels for each line in an accumulating period of each pixel, thereby discharging charges which are accumulated at a predetermined or higher level in the pixels. | 01-03-2013 |
20130001400 | IMAGE SCANNER, IMAGE FORMING APPARATUS AND DEW-CONDENSATION DETERMINATION METHOD - The present disclosure relates to a technique for, in an image scanner and an image forming apparatus equipped with the image scanner, detecting that dew condensation occurs on a transparent member for placing a document thereon. | 01-03-2013 |
20130001401 | Microarray-Based Spatial Filter - The invention relates to a spatial filter measuring arrangement ( | 01-03-2013 |
20130001402 | IMAGE SENSOR AND IMAGE CAPTURE APPARATUS - An image sensor includes pixel sections corresponding to unit pixels, a column signal line arranged for each column of the pixel sections, a row scanning circuit which selects the pixel sections for each row and transfers an analog signal to the column signal line, a column amplifier which amplifies the analog signal, an A/D converter which converts the analog signal into a digital signal for each column, a column scanning circuit which outputs the signal converted into the digital signal to a horizontal signal line, and a digital adder which adds the digital signals. The column amplifier adds the signals output from the pixel sections to the column signal line. The column scanning circuit outputs digitized signals of a plurality of columns. The digital adder adds the signals of the plurality of columns. | 01-03-2013 |
20130001403 | IMAGING ELEMENT, DRIVE METHOD FOR IMAGING ELEMENT, MANUFACTURING METHOD FOR IMAGING ELEMENT, AND ELECTRONIC APPARATUS - An imaging element includes a plurality of pixels. Each of the plurality of pixels includes the following element. A photoelectric transducer is disposed in each of the plurality of pixels and is configured to generate electric charge corresponding to received light. A storage unit has a predetermined capacitance and is configured to store therein electric charge transferred from the photoelectric transducer. A capacitor is disposed separate from a silicon substrate with an interlayer insulating film therebetween, the photoelectric transducer and the storage unit being formed in the silicon substrate. A connecting unit is disposed separate from the silicon substrate with the interlayer insulating film therebetween and is configured to connect the storage unit and the capacitor. | 01-03-2013 |
20130001404 | PIXEL ARRAY WITH INDIVIDUAL EXPOSURE CONTROL FOR A PIXEL OR PIXEL REGION - A pixel array includes a plurality of pixel structures, with each pixel structure having a photo-sensitive element for generating charge in response to incident light; a charge conversion element; a first transfer gate and a second transfer gate connected in series between the photosensitive element and the charge conversion element or between the photosensitive element and a supply line; and an output stage. A first transfer gate control line is connected to the first transfer gates of a first sub-set of the pixel structures in the array; and a second transfer gate control line connected to the second transfer gates of a second sub-set of the pixel structures in the array. The first sub-set of pixel structures and second sub-set of pixel structures partially overlap, having at least one pixel structure in common between them. | 01-03-2013 |
20130009037 | CONTACT IMAGE SENSOR UNIT AND IMAGE READING APPARATUS USING THE SAME - A contact image sensor unit includes: a light source ( | 01-10-2013 |
20130009038 | IMAGING DEVICE AND IMAGING APPARATUS - Disclosed herein is an imaging device including at least one special pixel with a configuration having a layout made different from the layout of the configuration of each pixel other than the special pixel. The special pixel is a pixel having an imaging characteristic steadily different from that of the other pixels. A difference in layout between the configuration of the special pixel and the configuration of the other pixels is used to suppress a non-uniformity of the imaging characteristic exhibited by the special pixel. | 01-10-2013 |
20130009039 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - Disclosed herein is a solid-state imaging device including: a photoelectric conversion section configured to have a charge accumulating region of a first conductivity type formed in a semiconductor layer; a pixel having the photoelectric conversion section and a pixel transistor; a pixel region in which a plurality of the pixels are arranged; an epitaxially grown semiconductor layer of the first conductivity type formed on an inner wall part of a trench disposed in the semiconductor layer at least between adjacent ones of the pixels within the pixel region; and a pixel separating section configured to separate the charge accumulating regions of the adjacent ones of the pixels from each other, the pixel separating section being formed on the inside of the semiconductor layer of the first conductivity type. | 01-10-2013 |
20130009040 | ACTIVE PIXEL SENSOR WITH NANOWIRE STRUCTURED PHOTODETECTORS - “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.” | 01-10-2013 |
20130009041 | PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE - A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node. | 01-10-2013 |
20130009042 | IMAGING DEVICE - The present invention relates to improved imaging devices having high dynamic range and to monitoring and automatic control systems incorporating the improved imaging devices. | 01-10-2013 |
20130009043 | IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE - An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line. | 01-10-2013 |
20130009044 | SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD OF SOLID STATE IMAGE PICKUP DEVICE, AND IMAGE PICKUP APPARATUS - A solid-state image pickup device includes a plurality of photoelectric conversion units, a plurality of signal read-out circuits, and a test terminal for testing the photoelectric conversion units. Each of the photoelectric conversion units includes a pixel electrode film, an opposing electrode film opposing the pixel electrode film and a light receiving layer disposed between the pixel electrode film and the opposing electrode film. The photoelectric conversion units are arranged in a two-dimensional array above a semiconductor substrate. Each of the signal read-out circuits are configured to read out a signal corresponding to an amount of electrical charges generated in the light receiving layer and transferred to the pixel electrode film. The test terminal is disposed outside of an area where the photoelectric conversion units are disposed, disposed on the same plane as the pixel electrode film, and made of the same material as the pixel electrode film. | 01-10-2013 |
20130015322 | APPARATUS AND METHOD FOR REDUCING COMMON-MODE ERRORAANM KUSUDA; YoshinoriAACI San JoseAAST CAAACO USAAGP KUSUDA; Yoshinori San Jose CA USAANM CARREAU; Gary RobertAACI PlaistowAAST NHAACO USAAGP CARREAU; Gary Robert Plaistow NH USAANM COLN; Michael C.AACI LexingtonAAST MAAACO USAAGP COLN; Michael C. Lexington MA US - Apparatus and methods reduce common-mode error. An integrated circuit includes a plurality of signal channels, a first proxy channel, and a subtraction block. The signal channels are configured to receive a plurality of input signals and to generate a plurality of output signals, and each of the signal channels has a substantially similar circuit topology. The first proxy channel has a substantially similar circuit topology as the plurality of signal channels, and includes an output that can vary in relation to a common-mode error of the signal channels. The subtraction block is configured to generate a plurality of modified output signals by using the output of the first proxy channel to reduce the common-mode error of the plurality of output signal channels. | 01-17-2013 |
20130015323 | IMAGE SENSOR WITH A CHARGE-BASED READOUT CIRCUIT - Embodiments of the present invention employ a charged-based readout circuit in an image sensing system that includes a column readout circuit which may perform sampling on signals received from a pixel array and transfer a corresponding correlated double sample (CDS) signal, a differential channel readout circuit that may receive the corresponding CDS signal and amplify the signal using an output amplifier, and an output buffer which may receive the amplified CDS signal and output a corresponding signal out of the system. The output amplifier may be composed of two output amplifier paths so that ping-ponging is possible. | 01-17-2013 |
20130015324 | CMOS IMAGE SENSORAANM Park; Young HwanAACI Namyangju-siAACO KRAAGP Park; Young Hwan Namyangju-si KRAANM Ahn; Jung ChakAACI Yongin-siAACO KRAAGP Ahn; Jung Chak Yongin-si KRAANM Lee; Sang JooAACI Seongnam-siAACO KRAAGP Lee; Sang Joo Seongnam-si KRAANM Park; Jong EunAACI Seongnam-siAACO KRAAGP Park; Jong Eun Seongnam-si KRAANM Jang; Young HeubAACI Suwon-siAACO KRAAGP Jang; Young Heub Suwon-si KR - In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact. | 01-17-2013 |
20130015325 | BACKSIDE ILLUMINATED IMAGE SENSORAANM AHN; Jung-chakAACI Yongin-siAACO KRAAGP AHN; Jung-chak Yongin-si KR - A backside illuminated image sensor includes a semiconductor substrate having a front side and a backside facing each other, a light receiving element in the semiconductor substrate, the light receiving element being configured to convert light incident on the backside of the semiconductor substrate to an electrical signal, a first semiconductor layer on the front side of the semiconductor substrate, and a second semiconductor layer on the backside of the semiconductor substrate, the second semiconductor layer being connected to a voltage source. | 01-17-2013 |
20130015326 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAMEAANM TAMURA; HikaruAACI ZamaAACO JPAAGP TAMURA; Hikaru Zama JP - The semiconductor device includes a plurality of pixels arranged in rows and columns, and first transistors fewer than the number of the plurality of pixels. The plurality of pixels each includes a photodiode and an amplifier circuit. The amplifier circuit holds the accumulated charge and includes at least a second transistor electrically connected to a cathode of the photodiode. The cathode of the photodiode in the pixel in an n-th row and the cathode of the photodiode in the pixel in an (n+1)-th row are electrically connected to the first transistor. The number n is a natural number. The pixel in the n-th row and the pixel in the (n+1)-th row are in an identical column. | 01-17-2013 |
20130015327 | RADIATION IMAGE CAPTURING APPARATUSAANM AMITANI; KoujiAACI TokyoAACO JPAAGP AMITANI; Kouji Tokyo JP - A control device of a radiation image capturing apparatus performs repeated reading of leak data prior to radiation image capturing operation and, when a threshold value has been exceeded by the leak data having been read out, said control device detects the start of irradiation. If there are periodic fluctuations in the leak data read out prior to radiation image capturing operation even though irradiation has not started, said control device determines whether or not a threshold value has been exceeded by a value obtained by subtracting a previously obtained fluctuation pattern of the leak data from the read-out leak data during a time period including at least a time period when the leak data fluctuates. | 01-17-2013 |
20130015328 | SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUSAANM Goto; TakashiAACI KanagawaAACO JPAAGP Goto; Takashi Kanagawa JP - A solid-state image pickup device includes a plurality of effective pixels each including a photoelectric conversion element and an OB pixel that is provided outside of an area where the effective pixels are formed and obtains the same output with a dark output of the effective pixel. Each of the effective pixels includes a first signal read-out circuit formed on a semiconductor substrate. The OB pixel includes a second signal read-out circuit formed on the semiconductor substrate and a capacitor connected to an input node of the second signal read-out circuit. The second signal read-out circuit has the same configuration as the first signal read-out circuit. A capacitance value of the capacitor is a value that renders the capacitance value at the input node of the first signal read-out circuit and the capacitance value at the input node of the second signal read-out circuit to be substantially equal to each other. | 01-17-2013 |
20130015329 | COLUMN A/D CONVERTER, COLUMN A/D CONVERSION METHOD, SOLID-STATE IMAGING ELEMENT AND CAMERA SYSTEMAANM Iwaki; HiroyukiAACI KanagawaAACO JPAAGP Iwaki; Hiroyuki Kanagawa JP - A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device includes a column processing section that includes a low-level bit latching section. The low-level bit latching section receives a comparator output from a comparator and a count output from a counter, and the low-level bit latching section latches a count value. | 01-17-2013 |
20130020465 | PIXEL, PIXEL ARRAY, IMAGE SENSOR INCLUDING THE SAME, AND METHOD FOR DRIVING IMAGE SENSOR - Disclosed are a pixel, a pixel array, an image sensor including the same, and a method for driving the image sensor. The method for driving the image sensor includes starting an integration procedure of charges in a photoelectric conversion part, transferring the charges, which are integrated in the photoelectric conversion part for a first integration duration, into a charge storage part, reading a signal level of the first integration duration, transferring charges, which are integrated in the photoelectric conversion part for a second integration duration after the first integration duration, into the charge storage part, reading a signal level of the second integration duration, and calculating a light intensity by using the signal level of the first integration duration and the signal level of the second integration duration. A WDR image sensor is provided to detect all light intensities regardless of the degree of illuminance. | 01-24-2013 |
20130020466 | Conversion Gain Modulation Using Charge Sharing Pixel - An image sensor including an array of pixel elements is operated according to two operation modes to modulate the conversion gain of the pixel to operate the image sensor based on the impinging light conditions. More specifically, an image sensor pixel element is operated in a high conversion gain mode for low light conditions and in a low conversion gain mode for bright light conditions. The low conversion gain mode implements charge sharing between the floating diffusion and the photodiode. The low conversion gain mode further implements partial reset where the photodiode and the floating diffusion are reset to the same potential and to a potential slightly less than the pinning voltage of the photodiode. | 01-24-2013 |
20130020467 | IMAGING SYSTEMS WITH COLUMN CURRENT MIRROR CIRCUITRY - Electronic devices may include image sensors having image pixel arrays with image pixels arranged in pixel rows and pixel columns. Each pixel column may be coupled to an active and an inactive current supply circuit. Each active current supply circuit may form a portion of a current mirror circuit that includes a common current source and a common input transistor. Each active current supply circuit may include a mirror transistor for mirroring current that flows through the common input transistor and a permanently enabled enabling transistor for activating that mirror transistor. Mirrored current that flows through a particular active mirror transistor may be supplied to image pixels in the pixel column associated with that particular mirror transistor. Each inactive current supply circuit may include a mirror transistor coupled to the input transistor and a permanently disabled enabling transistor. | 01-24-2013 |
20130020468 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer. | 01-24-2013 |
20130020469 | SOLID-STATE IMAGE SENSING DEVICE - A solid-state image sensing device according to the invention which can reduce an instantaneous current occurring in transferring image digital signals from analog-digital converters to registers to reduce noise sneaking into the analog-digital converters and a pixel array includes a pixel array, a vertical scanning circuit, a plurality of column ADCs, a plurality of registers, and control signal generation units. The control signal generation units are provided for respective groups into which the column ADCs and the registers disposed on one side of the pixel array are divided, and generate control signals of different timings, for respective units including at least one group, of transfer of converted image digital signals to the registers from the column ADCs operating in parallel. | 01-24-2013 |
20130020470 | CAMERA SYSTEM WITH MULTIPLE PIXEL ARRAYS ON A CHIP - An integrated circuit for capturing panoramic image is disclosed. The integrated circuit comprises a plurality of pixel arrays fabricated on a common substrate, wherein each pixel array being positioned to capture an image to be projected thereon, and wherein the orientation of each pixel array is rotated to match with the orientation of the image projected thereon. The integrated circuit also includes readout circuits coupled to the pixel arrays for reading electrical signals corresponding to the images captured from the pixel arrays. In one embodiment, the plurality of pixel arrays corresponds to four pixel arrays and the orientation of said each pixel array is substantially 90° apart from a neighboring pixel array. The integrated circuit further comprises a timing and control circuit, wherein the timing and control circuit is for controlling said one or more readout circuits and the plurality of pixel arrays. | 01-24-2013 |
20130020471 | SOLID-STATE IMAGING DEVICE - Disclosed is a solid-state imaging device capable of calculating the difference in charge obtained by photoelectric conversion, and capable of a high level of integration. A solid-state imaging device is provided with an AD converter which is provided with: a first comparator which outputs a signal corresponding to a first analogue signal of a first pixel by comparing said first analogue signal with a reference voltage supplied from the reference voltage generation unit which generates a reference voltage which gradually changes; a second comparator which outputs a signal corresponding to a second analogue signal of a second pixel by comparing said second analogue signal with the reference voltage supplied by the reference voltage generation unit; a difference circuit which finds the difference between the signal corresponding to said first analogue signal and the signal corresponding to said second analogue signal and outputs a difference signal; and a counter circuit which counts the number of pulses in a pulse sequence corresponding to the aforementioned difference signal and converts said difference signal into a digital signal. | 01-24-2013 |
20130026342 | IMAGE SENSOR WITH CONTROLLABLE VERTICALLY INTEGRATED PHOTODETECTORS - An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential. | 01-31-2013 |
20130026343 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises a plurality of matrix pixels, a reference signal generator for generating a ramp signal, a counter for performing counting according to the ramp signal output, and an AD converter, arranged for each pixel column, for performing AD conversion by comparing a pixel signal from the pixel with the ramp signal. Further, the AD converter includes a comparator to which the pixel signal and the reference signal are input, a storage for storing the AD conversion result, and an slope converter, between the output terminal of the reference signal generator and the input terminal of the comparator, for changing a gradient of the ramp signal, so that the noise overlaid on the ramp signal changes depending on the gradient of the ramp signal. Thus, it is possible to prevent generation of a horizontal-line noise in the ramp signal. | 01-31-2013 |
20130026344 | IMAGING UNIT - An imaging unit includes an image sensor, an imaging optical system which includes a prism that is positioned on the object side of the image sensor, wherein the prism bends an optical path of light emanating from an object to lead the light to the image sensor; a housing which accommodates and supports the image sensor and the prism; a light shield frame, which forms a part of the housing, provided on the object side of an incident surface of the prism, wherein the light shield frame shields a part of the light incident on the incident surface of the prism; and a prism positioning surface which is formed on the housing and contacts the prism to position the prism with respect to the housing. | 01-31-2013 |
20130026345 | SMALL PIXEL FOR IMAGE SENSORS WITH JFET AND VERTICALLY INTEGRATED RESET DIODE - A pixel and a pixel array of an image sensor device of the present invention have small pixel sizes by resetting sensed charge using a diode built vertically above a substrate. The pixel and the pixel array also have low noise performance by using a JFET as a source follower transistor for sensing charge. The pixel includes a floating diffusion node configured to sense photo-generated charge, a reset diode configured to reset the floating diffusion node in response to a reset signal, and a junction field effect transistor configured to output a signal having an output voltage level corresponding to a charge level of the floating diffusion node. | 01-31-2013 |
20130026346 | SAFETY DEVICE FOR A MACHINE IN WHICH A FIRST MACHINE PART PERFORMS A WORKING MOVEMENT WITH RESPECT TO A SECOND MACHINE PART - A safety device for a machine, in which machine a first machine part having a leading edge performs a working movement towards a second machine part, comprises a plurality of optical safety barriers and an evaluation unit. The optical safety barriers move in the working movement simultaneously with the first machine part in such a manner that the safety barriers move in advance of the leading edge at various spaced dispositions. The optical safety barriers span a protective field that has a two-dimensional cross section. The evaluation unit is designed for generating a stop signal to stop the first machine part in dependence upon the optical safety barriers. Towards the end of the working movement, the optical safety barriers are held substantially stationary in the region of the second machine part. The optical safety barriers are deactivated one following the other before they are interrupted by the first machine part. | 01-31-2013 |
20130026347 | OBSERVATION SYSTEM AND OBSERVATION METHOD - An observation system | 01-31-2013 |
20130032692 | METHOD AND APPARATUS FOR CONTROLLING OUTPUT OF THE SOLID-STATE IMAGER IN A BARCODE READER - A method and apparatus for imaging targets with an imaging reader. The method includes: (1) capturing return light from a target over a field of view of the solid-state imager and generating image data corresponding to the target; (2) transmitting the image data from the solid-state imager to the host when the gate circuit is set to the transmitting mode; and (3) preventing the image data from transmitting to the host when the gate circuit is set to the blocking mode. | 02-07-2013 |
20130032693 | IMAGE SENSOR - Provided is an image sensor capable of supporting a high speed operation. The image sensor includes a plurality of sampling units sampling a pixel signal to output a sampled signal pair; an auxiliary amplification unit amplifying a signal of the sampled signal pair; and an amplification unit sensing a differential signal pair transmitted through the auxiliary amplification unit to generate output data. | 02-07-2013 |
20130032694 | IMAGE SENSOR, IMAGING APPARATUS, AND IMAGING METHOD - There is provided an image sensor including a normal pixel group composed of a plurality of normal pixels, each of the normal pixels having a photoelectric conversion device for photoelectrically converting an incident light, and a detection pixel configured to detect a light incident from a neighboring pixel by the photoelectric conversion device within an effective pixel area of the normal pixel group. | 02-07-2013 |
20130032695 | IMAGE PICKUP APPARATUS - An image pickup apparatus includes a pixel generating a signal by photoelectric conversion, a comparator comparing the signal based on the pixel with a reference signal varied with time, a counter performing counting until the comparator outputs a signal indicating that a relationship in magnitude between the signal based on the pixel and the reference signal is reversed, and a control unit. The comparator includes a first amplifier receiving the reference signal at a first input portion and the signal based on the pixel at a second input portion to compare the signal based on the pixel with the reference signal. The control unit sets a bandwidth of the comparator to a first bandwidth when the reference signal varies at a first rate of change and to a second bandwidth when the reference signal varies at a second rate of change. | 02-07-2013 |
20130032696 | RADIATION IMAGE CAPTURING APPARATUS - A radiation image capturing apparatus includes: a detecting section, a scanning drive unit, switch units, reading circuits, and a controller. The controller controls at least the scanning drive unit and the reading circuits and causes the same to execute data readout process from the radiation detection elements. The controller causes the reading circuits to periodically perform a readout operation before radiation image capturing operation in a state where each of the switch units is in an off state by applying the off voltage to all of the scanning lines from the scanning drive unit, causes the reading circuits to repeatedly execute a leaked data readout process in which the electric charges leaked from the radiation detection elements through the switch units are converted into leaked data, and detects initiation of irradiation at a point when the read-out leaked data exceeds a threshold value. | 02-07-2013 |
20130032697 | PIXEL ARCHITECTURE AND METHOD - In accordance with an embodiment, a pixel includes at least two switches, each switch having a control terminal and first and second current carrying terminals. The control terminals of the first and second switches are commonly connected together. In accordance with another embodiment, a method for transferring charge from a first switch to a capacitance includes applying voltage to the commonly connected control terminals of the first and second switches. | 02-07-2013 |
20130037695 | IMAGE PICK-UP APPARATUS - An image pick-up apparatus includes a lens module, a base plate and an image sensor. The lens module includes a lens barrel and an optical lens. The optical lens has an optical axis. The base plate has a first surface facing toward the lens module, and an opposite second surface. The base plate has a through hole through the first and second surfaces. The through hole includes a first hole adjacent to the lens module and a second hole away from the lens module. The first hole is in communication with the second hole. The first hole has a first hole portion with a rectangular cross section. Inner surfaces of the first hole portion is inclined relative to the optical axis. An image sensor received in the second hole. The optically effective region of the image sensor has a smaller area than the opening of the first hole. | 02-14-2013 |
20130037696 | IMAGING APPARATUS AND DRIVING METHOD OF THE IMAGING APPARATUS - A driving method of an imaging apparatus comproses: horizontally transferring, by a horizontal scanning circuit, a signal based on a photoelectric conversion portion of a first pixel unit held in a signal holding capacitor to a common line; before ending of the horizontal transfer; applying, by a reset switch of a second pixel unit, a selection reset voltage to a floating diffusion region of the second pixel unit; and after the horizontal transfer, transferring, by a transfer switch of the second pixel unit, a signal of a photoelectric conversion portion of the second pixel unit to the floating diffusion region of the second pixel unit and amplifying, by an amplification transistor of the second pixel unit, a signal of the floating diffusion region of the second pixel unit to output the signal to an output line. | 02-14-2013 |
20130037697 | RING OSCILLATOR CIRCUIT, A/D CONVERSION CIRCUIT, AND SOLID-STATE IMAGING APPARATUS - A ring oscillator circuit causing a pulse signal to circulate around a circle to which an even number of inverting circuits are connected in a ring, wherein one of the inverting circuits is a first starting inverting circuit, which drives a first pulse signal according to a control signal, another of the inverting circuits is a second starting inverting circuit, which drives a second pulse signal based on a leading edge of the first pulse signal, still another is a third starting inverting circuit, which drives a third pulse signal based on the leading edge of the first pulse signal after the second pulse signal is driven, and the first to third starting inverting circuits are arranged within the circle of the inverting circuits in order of the third, second, and first pulse signals in traveling directions of the pulse signals. | 02-14-2013 |
20130037698 | SOLID-STATE IMAGING APPARATUS, METHOD OF MANUFACTURING SOLID-STATE IMAGING APPARATUS, AND ELECTRONIC APPARATUS - The present technology relates to a solid-state imaging apparatus that can provide a compound-eye system solid-state imaging apparatus capable of capturing an image with high image quality regardless of use environments, a method of manufacturing a solid-state imaging apparatus, and an electronic apparatus. The solid-state imaging apparatus includes photoelectric conversion units ( | 02-14-2013 |
20130037699 | SOLID-STATE IMAGING DEVICE - The solid-state imaging device | 02-14-2013 |
20130043372 | Multi-Band Position Sensitive Imaging Arrays - In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels. | 02-21-2013 |
20130043373 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a plurality of photoelectric conversion units arranged in rows and columns in a pixel region; a plurality of vertical transfer units arranged for corresponding columns of the photoelectric conversion units, and transfer, in a column direction, the signal charges read from the corresponding columns of the photoelectric conversion units; a first and a second horizontal transfer units arranged in parallel, and transfer, in a row direction, the signal charges transferred by the vertical transfer units; and a first and a second output units which (i) include floating diffusion units each formed in a region adjacent to an output end of a corresponding one of the first and the second horizontal transfer units and (ii) output, as electric signals, the transferred signal charges, wherein the floating diffusion units are disposed at greater intervals than adjacent ones of the horizontal transfer units. | 02-21-2013 |
20130048831 | MULTILEVEL RESET VOLTAGE FOR MULTI-CONVERSION GAIN IMAGE SENSOR - A method of operating an image sensor includes adjusting a capacitance coupled to a circuit node within a pixel cell. The circuit node is coupled to selectively receive an image charge acquired by a photo-sensor of the pixel cell. A conversion gain is selected from multiple conversion gains for the pixel cell by adjusting the capacitance. A voltage level from multiple voltage levels is selected for use as a reset signal when the reset signal is asserted. The reset signal controls resetting of the circuit node during operation of the pixel cell. The voltage level is selected dependent upon which of the multiple conversion gains is selected by adjusting the capacitance. The reset signal is asserted to reset a voltage at the circuit node. | 02-28-2013 |
20130048832 | CMOS IMAGING DEVICE WITH THREE-DIMENSIONAL ARCHITECTURE - An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit. | 02-28-2013 |
20130048833 | COLOR IMAGING ELEMENT - A single-plate color imaging element including color filters in a predetermined color filter array arranged on a plurality of pixels formed by photoelectric conversion elements arranged in horizontal and vertical directions, wherein in the color filter array, the first filters are vertically and horizontally arranged across a filter at a center of a 3×3 pixel group, and the 3×3 pixel group is repeatedly arranged in the horizontal and vertical directions. | 02-28-2013 |
20130056616 | IMAGE SENSOR, LIGHT QUANTITY MEASUREMENT METHOD, AND MICROSCOPE SYSTEM - An image sensor includes an effective pixel region formed of a pixel group which is irradiated with light, and an optical black region formed of a pixel group which is shielded from light. In the image sensor, when the image sensor is used for a light quantity measurement, the effective pixel region is sectioned into a measurement region used for the light quantity measurement and a light shielding region which is used for a calculation of a value of one of an offset component and a noise component and is shielded from light. | 03-07-2013 |
20130056617 | IMAGER WITH VARIABLE AREA COLOR FILTER ARRAY AND PIXEL ELEMENTS - A color pixel array includes a plurality of micropixels. Each micropixel includes a photosensitive element and a filter element optically aligned with the photosensitive element such that incident light passes through the filter element prior to reaching the photosensitive element. The micropixels are organized into triangular macropixels that each includes multiple micropixels. A perimeter shape of each of the triangular macropixels forms a triangle. The triangular macropixels have a repeating pattern across the color pixel array. | 03-07-2013 |
20130056618 | DRIVING DEVICE AND SPATIAL INFORMATION DETECTING DEVICE USING THE SAME - The driving device includes an applied voltage control unit configured to perform a transfer process of controlling a charge-coupled device to transfer electric charges. The applied voltage control unit is configured to switch, in order from a first end to a second end of a line of transfer electrodes of the charge-coupled device, a voltage applied to the transfer electrode from a control voltage for forming a potential well to a reference voltage for eliminating the potential well. The applied voltage control unit includes a control circuit configured to generate a driving signal based on a clock signal, and a driving circuit configured to apply the control voltage and the reference voltage selectively to the transfer electrode in accordance with the driving signal. The control circuit is configured to delay a second driving signal defined by the driving signal associated with one of the adjacent transfer electrodes from a first driving signal defined by the driving signal associated with the other of the adjacent transfer electrodes so as to adjust a phase difference between the first driving signal and the second driving signal to a value corresponding to predetermined time shorter than a period of the clock signal. | 03-07-2013 |
20130056619 | SOLID-STATE IMAGE PICKUP APPARATUS AND DRIVE METHOD THEREFOR - A solid-state image pickup apparatus of the present invention includes a plurality of pixels arranged in a matrix. For the convenience sake, among the plurality of pixels, two pixels from which signals are not read in parallel are set to be a first pixel and a second pixel. A first reset transistor is disposed in an electrical path between a first reset power supply line and the control electrode of an amplifying transistor contained in the first pixel. A second reset transistor is disposed in an electrical path between the control electrode of the amplifying transistor contained in the first pixel and the control electrode of an amplifying transistor contained in the second pixel. A third reset transistor is disposed in an electrical path between the control electrode of the amplifying transistor contained in the second pixel and a second reset power supply line. | 03-07-2013 |
20130062503 | SOLID-STATE IMAGING APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a ramp signal generator for generating first and second time-changing ramp signals during first and second analog-to-digital conversion periods, respectively; comparators for comparing a reset signal of a pixel with the first ramp signal during the first analog-to-digital conversion period, and comparing a pixel signal with the second ramp signal during the second analog-to-digital conversion period; and memories for storing, as first and second digital data, count values of counting from a start of changing the first and second ramp signals until an inversion of outputs of the comparators, during the first and second analog-to-digital conversion periods, wherein the ramp signal generator supplies a current from a current generator to a first capacitor element by a sampling and holding operation of a switch, and generates the first and second ramp signals based on the same bias voltage held by the first capacitor element. | 03-14-2013 |
20130062504 | SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND CAMERA SYSTEM - Disclosed herein is a solid state imaging device including a support substrate; an imaging semiconductor chip having a pixel array disposed on the support substrate; and an image processing semiconductor chip disposed on the support substrate, wherein the imaging semiconductor chip and the image processing semiconductor chip are connected by through-vias, and interconnects formed on the support substrate. | 03-14-2013 |
20130062505 | SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP APPARATUS, AND DRIVING METHOD - A solid-state image pickup device which is configured not to require transfer of signal charges between pixels performs TDI. An output control section | 03-14-2013 |
20130068929 | STACKED-CHIP IMAGING SYSTEMS - Imaging systems may be provided with stacked-chip image sensors. A stacked-chip image sensor may include a vertical chip stack that includes an array of image pixels, analog control circuitry and storage and processing circuitry. The array of image pixels, the analog control circuitry, and the storage and processing circuitry may be formed on separate, stacked semiconductor substrates or may be formed in a vertical stack on a common semiconductor substrate. The image pixel array may be coupled to the control circuitry using vertical metal interconnects. The control circuitry may route pixel control signals and readout image data signals over the vertical metal interconnects. The control circuitry may provide digital image data to the storage and processing circuitry over additional vertical conductive interconnects coupled between the control circuitry and the storage and processing circuitry. The storage and processing circuitry may be configured to store and/or process the digital image data. | 03-21-2013 |
20130068930 | A/D CONVERTER AND SOLID-STATE IMAGING APPARATUS - Provided is an A/D converter including an input terminal, a reference signal line for supplying a reference signal which changes temporally, a comparator, a correction capacitor connected to an inverting input terminal of the comparator; and an output circuit which outputs digital data corresponding to an analog signal input to the input terminal. In a first state in which a total voltage of a first analog signal and an offset voltage of the comparator is held in the correction capacitor, a second analog signal input to the input terminal is supplied to a non-inverting input terminal of the comparator, and the second analog signal or the total voltage is changed using the reference signal, thereby outputting, from the output circuit, digital data. | 03-21-2013 |
20130068931 | A/D CONVERTER, A/D CONVERSION METHOD, SOLID-STATE IMAGING ELEMENT AND CAMERA SYSTEM - A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device includes a bit inconsistency prevention section configured to prevent bit inconsistency between output of a low-level bit latch section and a high-level bit counting section. | 03-21-2013 |
20130068932 | PHOTOSENSITIVE DEVICES AND METHODS AND CIRCUITS FOR READING THE SAME - The present application relates to a photosensitive device as well as a reading method and a reading circuit thereof. The photosensitive device comprises a pixel array and a read circuit, wherein a transfer gate for connecting adjacent pixels and transferring charge between the connected pixels is arranged among at least some designated pixels in the pixel array, the read circuit is used for reading charge of a pixel in the pixel array, said charge is at least one of self-charge of said pixel, charge transferred from an adjacent pixel of said pixel, superposition of the self-charge of said pixel and the charge transferred from one or more pixels adjacent to said pixel, and superposition of the transfer charges of two or more pixels adjacent to said pixel. | 03-21-2013 |
20130075580 | MULTIPLE CLOCKING MODES FOR A CCD IMAGER - A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase. | 03-28-2013 |
20130075581 | MULTIPLE CLOCKING MODES FOR A CCD IMAGER - A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase. | 03-28-2013 |
20130075582 | MULTIPLE CLOCKING MODES FOR A CCD IMAGER - A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase. | 03-28-2013 |
20130075583 | MULTIPLE CLOCKING MODES FOR A CCD IMAGER - A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase. | 03-28-2013 |
20130075584 | IMAGER ROW CONTROL-SIGNAL TESTER - Row-control signal monitoring system for an electronic imager includes signal processing circuitry coupled a pixel array of the electronic imager which receives at least one row control signal from the pixel array and provides an output signal corresponding to the selected row control signal. Monitoring circuitry compares the output signal to a target value to test the at least one row-control signal. | 03-28-2013 |
20130075585 | SOLID IMAGING DEVICE - According to one embodiment, a solid imaging device includes an imaging substrate, an imaging lens, a microlens array substrate and a polarizing plate array substrate. The imaging substrate has a plurality of pixels formed on an upper side thereof. The imaging lens is provided above the imaging substrate. The optical axis in the imaging lens intersects with the upper side of the imaging substrate. The microlens array substrate is provided between the imaging substrate and the imaging lens. A surface in the microlens array substrate has a plurality of microlenses arranged two-dimensionally. The surface of the microlens array intersects with the optical axis. The polarizing plate array substrate is provided between the imaging substrate and the imaging lens. The plurality of kinds of polarizing plates in the polarizing plate array substrate having polarization axes in mutually different directions are arranged two dimensionally. | 03-28-2013 |
20130075586 | SOLID IMAGING DEVICE AND PORTABLE INFORMATION TERMINAL DEVICE - According to one embodiment, a solid imaging device includes an imaging substrate, a light-shielding member and a AD conversion circuits. The imaging substrate is two-dimensionally arranged with a plurality of pixels. The plurality of pixels have a top face formed with an optoelectronic conversion element for converting incident light into an electric charge and storing it and a back face opposite to the top faces. The imaging substrate is formed with a top face by the top face of the plurality of pixels and formed with a back face by the back face of the plurality of pixels. The light-shielding member is provided on the top face side of the imaging substrate. The AD conversion circuits is formed on the back face of the pixels shielded from the light. | 03-28-2013 |
20130075587 | SOLID STATE IMAGING DEVICE, PORTABLE INFORMATION TERMINAL DEVICE AND METHOD FOR MANUFACTURING SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face. | 03-28-2013 |
20130075588 | SOLID STATE IMAGING DEVICE, METHOD OF CONTROLLING SOLID STATE IMAGING DEVICE, AND PROGRAM FOR CONTROLLING SOLID STATE IMAGING DEVICE - A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted. | 03-28-2013 |
20130075589 | RAMP WAVE GENERATION CIRCUIT AND SOLID-STATE IMAGING DEVICE - Provided are a ramp wave generation circuit and a solid-state imaging device in which a pulse output unit includes a delay part including a plurality of delay units that delay and output an input signal, and a delay control part that controls a delay time by which the delay unit delays the signal, and outputs a plurality of signals having logic states corresponding to logic states of signals output by the delay units, a time difference between timings at which the logic states of the respective signals are changed being a time corresponding to the delay time. | 03-28-2013 |
20130075590 | IMAGE SENSORS HAVING MULTIPLE ROW-SPECIFIC INTEGRATION TIMES - In various embodiments, reset is suppressed for at least one selected row of pixels in a pixel array during a rolling shutter operation, thereby setting the integration time of the selected row(s) to the full-frame integration time. | 03-28-2013 |
20130075591 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to the present invention includes pixels which are arranged two-dimensionally and each of which includes: a light absorbing layer that converts light into signal charges; a signal read circuit to read out the signal charges, the signal read circuit being formed on a side opposite to a light incident plane side of the light absorbing layer; a metal layer that is formed on the light incident plane side of the light absorbing layer, the metal layer having an aperture to transmit, into the light absorbing layer, light of a wavelength range depending on a shape of the aperture, a driving circuit that applies a voltage to the metal layer to generate, in the light absorbing layer, a potential gradient to collect the signal charges. | 03-28-2013 |
20130075592 | Method of Refresh Operation for Flat Panel Radiation Imager - To provide a method of refresh operation for a flat panel radiation imager that makes it possible to carry out a refresh operation in such a way that electric charge that is accumulated in pixels by photoelectric conversion is efficiently released with low power consumption and during a short period of time. Control signals of the refresh operation are turned into a plurality of successive pulses at regular intervals; and timing is adjusted in a way that adjacent switching elements disposed on the same signal line are not turned ON at the same timing. | 03-28-2013 |
20130075593 | ACTIVE PIXEL SENSORS WITH VARIABLE THRESHOLD RESET - A CMOS image sensor array has rows and columns of active pixels, and column lines in communication with the active pixels in the respective columns. Each active pixel has an output connected to a column line and includes a photodetector that produces a signal proportional to incident light intensity that is coupled to an active pixel output based on column select and row select signals. Each active pixel has a reset transistor for resetting the active pixel, wherein each reset transistor has a first gate terminal and a second gate terminal. The reset transistors have a variable threshold capability that allows increased sensor array dynamic range or mitigation of the effects of temperature or radiation induced transistor threshold voltage shifts. Row select, column select, and sense transistors can also be configured to have variable thresholds. | 03-28-2013 |
20130082163 | IMAGE SENSOR WITH MICRO-LENS COATING - Techniques and architectures for providing a coating for one or more micro-lenses of a pixel array. In an embodiment, a pixel element includes a micro-lens and a coating portion extending over a surface of the micro-lens, where a profile of the coating portion is super-conformal to, or at least conformal to, a profile of the micro-lens. In another embodiment, the coating portion is formed at least in part by orienting the surface of the micro-lens to face generally downward with the direction of gravity, the orienting to allow a fluid coating material to flow for formation of the coating portion. | 04-04-2013 |
20130082164 | IMAGE SENSOR AND ROW AVERAGING METHOD FOR IMAGE SENSOR - An image sensor and a row averaging method for an image sensor capable of simultaneously selecting the pixels of the same color in the same column of different rows in a pixel array and performing a signal process, thereby preventing an increase in an area and a decrease in the sensing speed of the pixels in the sub-sampling mode and the binning mode of the image sensor. | 04-04-2013 |
20130082165 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses. | 04-04-2013 |
20130082166 | IMAGING APPARATUS, IMAGING SYSTEM, AND METHOD FOR CONTROLLING IMAGING APPARATUS - An imaging apparatus includes a detector having a plurality of conversion elements for converting radiation or light into an electric charge, a power supply unit that supplies a first voltage to the conversion element in a first imaging operation, and a control unit that controls the detector and the power supply unit. During a period between the first imaging operation and a second imaging operation, the control unit controls to perform a first inter-imaging operation in which a second voltage different from the first voltage is supplied to the conversion element, and, subsequently to the first inter-imaging operation, a second inter-imaging operation in which a third voltage different from the first and the second voltages is supplied to the conversion element. The absolute value of the difference between the third and the first voltages is smaller than the absolute value of the difference between the second and the first voltages. | 04-04-2013 |
20130087683 | MULTIPLE-ROW CONCURRENT READOUT SCHEME FOR HIGH-SPEED CMOS IMAGE SENSOR WITH BACKSIDE ILLUMINATION - A system, method and apparatus implementing a multiple-row concurrent readout scheme for high-speed CMOS image sensor with backside illumination are described herein. In one embodiment, the method of operating an image sensor starts acquiring image data within a color pixel array and the image data from a first set of multiple rows in the color pixel array is then concurrently readout. Concurrently reading out the image data from the first set of multiple rows includes concurrently selecting a first portion of the image data from the first set by first readout circuitry and a second portion of the image data from the first set by second readout circuitry. The first and second portions of the image data from the first set are different and the first and second readout circuitries are also different. Other embodiments are also described. | 04-11-2013 |
20130087684 | LASER DAYLIGHT DESIGNATION AND POINTING - A laser designator system using modulated CW laser diodes and a conventional high pixel count image sensor array, such as CCD or CMOS array. These two technologies, diode lasers and imaging sensor arrays are reliable, widely used and inexpensive technologies, as compared with prior art pulsed laser systems. These systems are distinguished from the prior art systems in that they filter the laser signal spatially, by collecting light over a comparatively long period of time from a very few pixels out of the entire field of view of the image sensor array. This is in contrast to the prior art systems where the laser signal is filtered temporarily, over a very short time span, but over a large fraction of the field of view. By spatially filtering the signal outputs of the individual pixels, it becomes possible to subtract the background illumination from the illuminated laser spot. | 04-11-2013 |
20130087685 | SOLID-STATE IMAGING APPARATUS - An imaging apparatus includes a plurality of unit pixels arranged in a matrix and configured to generate a signal by photoelectric conversion, a plurality of pixel output lines connected to each column of the unit pixels, a plurality of column amplifiers configured to amplify a signal of the pixel output lines, and a driving circuit configured to generate a control signal of the column amplifiers. Each of the column amplifiers includes first and second input terminals, an output terminal, an input capacitance between the first and second input terminals, and a first switch between the second input and output terminals. The driving circuit is configured to generate the control signal so as to make a period for switching the first switch from a conductive state to a non-conductive state longer than a period for switching the first switch from the non-conductive state to the conductive state. | 04-11-2013 |
20130087686 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixels arrayed in a matrix, and configured to generate signals by photoelectric conversion; a plurality of read-out circuits disposed on each column of the plurality of pixels arrayed in a matrix pattern, and configured to read out the signals from the plurality of pixels; a plurality of comparison units configured to compare the signals output from the plurality of read-out circuits with a reference signal whose level changes with time; a counter configured to count a clock signal after the level of the reference signal starts a change; a storage unit configured, when a magnitude relationship between the signals output from the plurality of the read-out circuits and the reference signal is reversed; and a reset unit configured to reset the count value stored in the storage unit. | 04-11-2013 |
20130087687 | PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes, on one substrate, a pixel driving unit and a signal processing unit that includes a digital circuit configured to execute signal processing. A first voltage and a second voltage different in value from the first voltage are supplied to the digital circuit of the pixel driving unit. A third voltage and a fourth voltage different in value from the third voltage are supplied to the digital circuit of the signal processing unit. A main portion of a first conductor that supplies the first voltage to the digital circuit of the pixel driving unit and a main portion of a second conductor that supplies the third voltage to the digital circuit of the signal processing unit are isolated from each other. | 04-11-2013 |
20130087688 | RAMP SIGNAL OUTPUT CIRCUIT, ANALOG-TO-DIGITAL CONVERSION CIRCUIT, IMAGING DEVICE, METHOD FOR DRIVING RAMP SIGNAL OUTPUT CIRCUIT, METHOD FOR DRIVING ANALOG-TO-DIGITAL CONVERSION CIRCUIT, AND METHOD FOR DRIVING IMAGING DEVICE - A circuit configured to output a ramp signal having a potential varying depending on time includes a voltage supply unit configured to supply a plurality of voltages having different amplitudes, a current supply unit, an integration circuit configured to output the ramp signal, and a capacitive element. The voltage supply unit is connected to one terminal of the capacitive element. The integration circuit and the current supply unit are connected to another terminal of the capacitive element. | 04-11-2013 |
20130099093 | DETECTION APPARATUS AND DETECTION SYSTEM - A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio. | 04-25-2013 |
20130099094 | SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MANUFACTURING METHOD OF THE SOLID-STATE IMAGING DEVICE - A solid-state imaging device including, active elements configured to handle the charge captured in a photoreceiving region, an element isolation region configured to isolate regions of the active element, a first impurity region configured to surround the element isolation region, and a second impurity region including an impurity region lower in impurity concentration than the first impurity region, the second impurity region being provided between the first impurity region and active elements. | 04-25-2013 |
20130099095 | MULTIPLE-GAIN CHARGE SENSING IN IMAGE SENSORS - In various embodiments, image sensors include output channels enabling high-gain and/or low-gain charge read-out while minimizing charge-conversion noise. | 04-25-2013 |
20130099096 | FLASH DETECTION AND LASER RESPONSE SYSTEM - A flash detection and laser response system includes a flash sensor configured to capture a plurality of sensor images, an image analyzer configured to identify at least a first image including a first flash event and to compute from the first image a direction of the flash event relative to the flash sensor, a laser, and a steering mechanism coupled to the laser and configured to steer disabling light from the laser in the direction of the flash event. | 04-25-2013 |
20130099097 | IMAGING APPARATUS AND IMAGING METHOD - Provided is an imaging apparatus including an imaging element section, an imaging optical system, a transmission/block section, an actuator, and an output section. The imaging element section includes a plurality of pixels, and the imaging optical system forms an image on the imaging element section, the image being formed by an electromagnetic wave from the outside. The transmission/block section transmits and blocks the electromagnetic wave to/against the imaging element section, the transmission/block section being disposed at an aperture stop position in the imaging optical system. The actuator drives the transmission/block section to move back and forth to be changed in state between transmission and blocking. The output section produces an image signal output being differential signaling between a pixel output from the imaging element section when the transmission/block section is in the transmission state, and a pixel output from the imaging element section when it is in the blocking state. | 04-25-2013 |
20130099098 | SOLID-STATE IMAGING DEVICE, MEMBERS FOR THE SAME, AND IMAGING SYSTEM - The present invention provides a solid-state imaging device including a pad capable of reducing inferior connection with an external terminal. The solid-state imaging device includes a first substrate provided, on its front face, with photoelectric conversion elements, a first wiring structure, a second substrate provided, on its front face, with at least a part of peripheral circuits, and a second wiring structure. The first substrate, the first wiring structure, the second wiring structure, and the second substrate are provided in this order. The first wiring structure includes a wiring layer including wirings made mainly of copper. The second wiring structure includes a wiring layer including wirings made mainly of copper. Wirings made mainly of copper in the wiring layer in the first wiring structure are bonded with wirings made mainly of copper in the wiring layer in the second wiring structure. The solid-state imaging device includes a pad formed of a conductive element made mainly of aluminum. | 04-25-2013 |
20130099099 | RADIATION DETECTOR AND METHOD - Embodiments of the invention provide a radiation detector comprising a pixel, the pixel having a first diode arranged to collect radiation-generated carriers; a second diode arranged to collect radiation-generated carriers; switching components operable to permit independent readout of the first diode and the second diode, wherein the first diode has a higher node capacitance than the second diode. | 04-25-2013 |
20130105664 | IMAGE SENSOR WITH INDIVIDUALLY SELECTABLE IMAGING ELEMENTS | 05-02-2013 |
20130105665 | SOLID-STATE IMAGING DEVICE | 05-02-2013 |
20130105666 | SOLID-STATE IMAGING DEVICE | 05-02-2013 |
20130105667 | SOLID-STATE IMAGING APPARATUS AND METHOD FOR MANUFACTURING THE SOLID-STATE IMAGING APPARATUS | 05-02-2013 |
20130112850 | SYSTEM AND METHOD FOR GENERATING A DESELECT MAPPING FOR A FOCAL PLANE ARRAY - A method for generating a deselect mapping for a focal plane array according to one embodiment includes gathering a data set for a focal plane array when exposed to light or radiation from a first known target; analyzing the data set for determining which pixels or subpixels of the focal plane array to add to a deselect mapping; adding the pixels or subpixels to the deselect mapping based on the analysis; and storing the deselect mapping. A method for gathering data using a focal plane array according to another embodiment includes deselecting pixels or subpixels based on a deselect mapping; gathering a data set using pixels or subpixels in a focal plane array that are not deselected upon exposure thereof to light or radiation from a target of interest; and outputting the data set. | 05-09-2013 |
20130112851 | SOLID-STATE IMAGING DEVICE - The solid-state imaging device | 05-09-2013 |
20130112852 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a column ADC realizing higher precision and higher-speed conversion. Converters converts a signal of each pixels output via a corresponding vertical read line to a digital value by sequentially executing first to N-th (N: integer of three or larger) conversion stages. In the first to (N−1)th conversion stages, each converter determines a value of upper bits including the most significant bit of a digital value by comparing the voltage at a retention stage with a reference voltage while changing the voltage at a retention node. In the N-th conversion stage, each converter determines a value of remaining bits to the least significant bit by comparing the voltage at the retention node with the reference voltage while continuously changing the voltage at the retention node in a range of the voltage step in the (N−1)th conversion stage or a range exceeding the range. | 05-09-2013 |
20130112853 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device | 05-09-2013 |
20130112854 | SOLID-STATE IMAGING DEVICE - The present invention provides a solid-state imaging device including a first substrate provided with a plurality of photoelectric conversion units thereon, and a second substrate provided with a reading circuit and parallel processing circuits thereon. The solid-state imaging device includes a DC voltage supply wiring configured to supply a DC voltage to the plurality of parallel processing circuits. The DC voltage supply wiring is formed by electrically connecting first conductive patterns provided on the first substrate with second conductive patterns provided on the second substrate. | 05-09-2013 |
20130119233 | IMAGING DEVICE WITH HIGH DYNAMIC RANGE - A high dynamic range imaging device including a first substrate with multiple pixels, each pixel having a photodetector associated with multiple read-out circuits. Each read-out circuit including a device for charging and discharging the photodetector that is associated with the read-out circuit. Each charging and discharging device being controlled by a charge and discharge activation signal imposing an integration time of the photodetector of each pixel associated with the read-out circuit. The device further including a second substrate, distinct from the first, with an electronic control circuit for controlling the charging and discharging devices, designed for generating multiple charge and discharge activation signals to be transmitted to the charging and discharging devices using electrical connections between the first and second substrates. Each pixel or group of pixels is associated to an activation signal imposing an integration time specific and appropriate to the pixel or group of pixels. | 05-16-2013 |
20130119234 | UNIT PIXEL AND THREE-DIMENSIONAL IMAGE SENSOR INCLUDING THE SAME - A unit pixel of a three-dimensional image sensor includes a non-silicon photodetector and at least one readout circuit. The non-silicon photodetector is formed at a silicon substrate, and the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light. The at least one readout circuit is formed at the silicon substrate, the at least one readout circuit outputs a sensing signal based on the photocharge, and the sensing signal generates depth information on a distance to an object. | 05-16-2013 |
20130119235 | SOLID-STATE IMAGING APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a plurality of pixels each configured to output a signal generated by a photoelectric conversion via a source follower circuit; an output line connected to the plurality of pixels; a current source circuit portion for supplying a current to the output line; and a first amplifier unit configured to clamp a signal from the output line of the pixel at a reset state to a clamping capacitor, and to amplify thereafter the signal from the output line of the pixel at a non-reset state, wherein the current source circuit portion changes from a state of supplying no current to the output line to a state of supplying the current to the output line before a timing of terminating the clamping of the signal. | 05-16-2013 |
20130119236 | RESONANCE ENHANCED ABSORPTIVE COLOR FILTERS - Resonance enhanced color filter arrays are provided for image sensors. Resonance cavities formed with color filter materials that enhance the color filtering capabilities of the color filter materials. Resonance enhanced color filter arrays may be provided for back side illumination image sensors and front side illumination image sensors. A layer of high refractive index material or metamaterial may be provided between a microlens and a color filter material to serve as a first, partially reflecting interface for the resonance cavity. An optional layer of high refractive index material or metamaterial may be provided between color filter material and a substrate. In front side illumination image sensors, color filter material may be provided in a light guide structure that extends through interlayer dielectric. The color filter material in the light guide structure may form at least part of a resonance cavity tor a resonance enhanced color filter array. | 05-16-2013 |
20130119237 | AMBIENT LIGHT ILLUMINATION FOR NON-IMAGING CONTACT SENSORS - A sensor is provided for capturing images of skin topology having an upper surface providing a platen, and a one or two-dimensional array of light sensing pixel elements for receiving light representative of the topology of skin when upon the upper surface and illuminated by at least redirected ambient light received within the sensor through the upper surface. One or more layers or coatings of reflective or scattering materials are provided in the sensor for redirecting ambient light by one or more of reflection, scattering, or propagation towards the platen to illuminate the skin. The pixel elements are sensitive to one or more selected wavelengths or wavelength ranges of the ambient light present. Optional light source(s) may be provided for use when ambient light present is inadequate for proper sensor operation. | 05-16-2013 |
20130119238 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region. | 05-16-2013 |
20130119239 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a color filter, an over-coating layer formed on the color filter, and a medium layer formed on the over-coating layer, wherein the medium layer is configured with at least two medium layers of which refractive indices are different from each other. | 05-16-2013 |
20130119240 | PHOTOELECTRIC CONVERSION CELL AND ARRAY, READING METHOD THEREFOR, AND CIRCUIT THEREOF - In order to achieve a photovoltaic cell and an array of high sensitivity and high dynamic range, there is a need for a photovoltaic cell and an array which are combined so that an amplified photovoltaic element and a selection element are resistant to external noise, and so that the combination is resistant to effects from address selection pulse noise at array readout time. In the present invention, in order to solve the problem, a photovoltaic cell has been configured with a combination of an amplified photovoltaic element ( | 05-16-2013 |
20130126706 | APPARATUS HAVING A CONTROLLABLE FILTER MATRIX TO SELECTIVELY ACQUIRE DIFFERENT COMPONENTS OF SOLAR IRRADIANCE - Apparatus and method, as may be used to acquire different components of solar irradiance in a solar-based power generation system or as may be used in a sky imager, are provided. A filter matrix ( | 05-23-2013 |
20130126707 | PIXEL ARRAY AREA OPTIMIZATION USING STACKING SCHEME FOR HYBRID IMAGE SENSOR WITH MINIMAL VERTICAL INTERCONNECTS - Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed. | 05-23-2013 |
20130126708 | IMAGE SENSOR WITH TOLERANCE OPTIMIZING INTERCONNECTS - Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed. Embodiments of the above may include systems, methods and processes for staggering ADC or column circuit bumps in a column or sub-column hybrid image sensor using vertical interconnects are also disclosed. | 05-23-2013 |
20130126709 | SYSTEM AND METHOD FOR SUB-COLUMN PARALLEL DIGITIZERS FOR HYBRID STACKED IMAGE SENSOR USING VERTICAL INTERCONNECTS - Embodiments of a hybrid imaging sensor and methods for pixel sub-column data read from the within a pixel array. | 05-23-2013 |
20130126710 | SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE - A solid-state imaging device and an imaging device are capable of transferring a control signal to pixels formed in each chip of the solid-state imaging device, in which the plurality of chips are connected to each other, without an increase in a circuit size of the solid-state imaging device or an increase in the number of connectors between the chips. The solid-state imaging device, in which first and second substrates are electrically connected to each other via the connectors, includes a pixel unit in which a plurality of pixels each including a photoelectric conversion element disposed in the first substrate and a reading circuit disposed in the second substrate are arrayed two-dimensionally, and a read control circuit that controls reading of a signal from the pixels. The read control circuit includes a pulse generation unit and a logical unit. | 05-23-2013 |
20130126711 | LOW LIGHT VISION AND THERMAL IMAGING DEVICES WITH COOL CHIP COOLING - Improved low light vision and thermal imaging devices are provided. The devices of the present invention employ thermionic or thermotunneling cooling, with or without Avto Metals™, to ensure efficient operation under conditions of low illumination or the complete absence of illumination to detect emitted or reflected infrared and visible light radiation, significantly reducing thermal noise to produce superior image resolution and sensitivity within a small, lightweight footprint that will have a wide range of military, law enforcement, civilian, and other applications. | 05-23-2013 |
20130126712 | DEVICE FOR DETECTING AN ANALYTE IN A BODILY FLUID - A device is proposed for detecting at least one analyte in a bodily fluid. The device comprises at least one test element with at least one two-dimensional evaluation region. The device furthermore comprises at least one spatially resolving optical detector having a plurality of pixels. The detector is designed to image at least part of the test element onto an image region. In the process, at least part of the evaluation region is imaged onto an evaluation image region. The detector is matched to the test element such that a predetermined minimum number of pixels is provided for each dimension within the evaluation image region. The pixels are arranged in a two-dimensional matrix arrangement. The matrix arrangement has pixel rows and pixel columns, wherein the pixel rows are arranged substantially parallel to a longitudinal direction of the evaluation region and/or of the evaluation image region. | 05-23-2013 |
20130134295 | IMAGING SYSTEMS WITH SELECTABLE COLUMN POWER CONTROL - Electronic devices may include image sensors having image pixel arrays with image pixels arranged in pixel rows and pixel columns. Each pixel column may be coupled to a column line having column readout circuitry. The column readout circuitry on each column line may include signal processing circuitry and a latch circuit. The latch circuit on each column line may be used to selectively enable and disable the signal processing circuitry on that column line. Each latch circuit may be coupled to first and second signal lines for globally enabling and disabling the signal processing circuitry on all of the column lines. Each latch circuit may be coupled to column decoder circuitry. The column decoder circuitry may provide a column-select signal to latch circuits on a chosen subset of column lines that enables the signal processing circuitry on those column lines by setting those latch circuits. | 05-30-2013 |
20130134296 | AD CONVERSION CIRCUIT AND IMAGING APPARATUS - An AD conversion circuit includes a reference signal generation unit, which generates a reference signal, a comparison unit, which ends a comparison process at a timing at which the reference signal has satisfied a predetermined condition with respect to the analog signal, a first path in which a signal is transferred through each of n delay units, a clock signal generation unit, which outputs a lower-order phase signal, a latch unit, which latches the lower-order phase signal, a higher-order count unit including a first counter circuit, which acquires a higher-order count value by performing a count operation using a signal output from any one of the delay units, a calculation unit, which generates a lower-order count signal, and a lower-order count unit, which acquires a lower-order count value by performing the count operation using the lower-order count signal. | 05-30-2013 |
20130140432 | BACKSIDE-ILLUMINATED (BSI) PIXEL INCLUDING LIGHT GUIDE - Implementations of a pixel including a substrate having a front side, a back side, and a photosensitive region formed on or near the front side, a dielectric layer formed on the front side, and a metal stack having a bottom side and a top side, the bottom side being on the dielectric layer. A light guide is formed in the dielectric layer and the metal stack and extending from the front side of the substrate to the top side of the metal stack, the light guide having a refractive index equal to or greater than the refractive index of the substrate. Other implementations are disclosed and claimed. | 06-06-2013 |
20130140433 | Sensor Pixel Array and Separated Array of Storage and Accumulation with Parallel Acquisition and Readout - A demodulation image sensor, such as used in time of flight (TOF) cameras, performs the acquisition and readout of the pixels in parallel. This is used to avoid motion artifacts due to samplings performed separated in time. | 06-06-2013 |
20130140434 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device is capable of suppressing as much as possible an increase in power consumption of a low-frequency noise removing process. A pixel unit includes pixels outputting pixel signals corresponding to an amount of incident light and correction pixels outputting correction pixel signals corresponding to a correction reference voltage. An AD conversion circuit includes a delay circuit, to which a plurality of delay elements are connected, and outputs a digital signal corresponding to the number of delay elements through which a pulse signal passes when the pulse signal passes through the number of delay elements corresponding to a level of the pixel signal or the correction pixel signal. | 06-06-2013 |
20130140435 | SOLID-STATE IMAGING APPARATUS - There is provided a solid-state imaging apparatus that can prevent degradation of image quality. The solid-state imaging apparatus includes a plurality of pixels ( | 06-06-2013 |
20130140436 | Color Filter Array, Imaging Device, and Image Processing Unit - A color filter array includes a plurality of filters, each having one of a plurality of types of spectral sensitivity and being disposed at the location of a corresponding one of a plurality of pixels. The filters of a predetermined type selected from among the plurality of types are arranged at the locations of the pixels in a checkered pattern, and the filters of some or all of the other types are randomly arranged at the pixel locations at which the filters of the predetermined type are not present. | 06-06-2013 |
20130140437 | Method and Apparatus for Examining a Sample - A method and an apparatus for examining a sample. The apparatus has a light source for generating excitation light in pulses which occur in succession at an excitation pulse frequency, for illuminating a sample region with the excitation pulse, and having a detector for detecting the detection light emanating from the sample region. The apparatus is characterized in that, for each detected photon of the detection light, the detector generates an electrical pulse and thereby a sequence of electrical pulses, and an analog-digital converter is provided that generates a digital data sequence by sampling the sequence of electrical pulses at a sampling rate. | 06-06-2013 |
20130140438 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 06-06-2013 |
20130140439 | IMAGE PICKUP SYSTEM, METHOD FOR DRIVING IMAGE PICKUP ELEMENTS, AND RECORDING MEDIUM - An image pickup system includes an image pickup element with an image pickup region in which a plurality of pixels are arranged in a matrix, and a controller configured to control reading of signals from the pixels. The controller divides a first frame period in which a first image is read from the image pickup element into a plurality of divided frame periods, including first and second divided frame periods. When the number of pixels included in the first image is larger than the number of pixels included in a second image, a second frame period required for reading all signals from the pixels included in the second image is inserted between the first and second divided frame periods. A refresh cycle of the second image is shorter than a refresh cycle of the first image. | 06-06-2013 |
20130146747 | IMAGE SENSORS WITH VERTICAL JUNCTION GATE SOURCE FOLLOWER PIXELS - An image sensor pixel suitable for use in a back-side-illuminated or a front-side-illuminated sensor arrangement is provided. The image sensor pixel may be a small size pixel that includes a source follower implemented using a vertical junction field effect (JFET) transistor. The vertical JFET source follower may be integrated directly into the floating diffusion node, thereby eliminating excess metal routing and pixel area typically allocated for the source follower in conventional pixel configurations. Pixel area may instead be allocated for increasing the charge storage capacity of the photodiode or can be used to reduce pixel size while maintaining pixel performance. Using a vertical junction field effect transistor in this way simplifies pixel addressing operations and minimizes random telegraph signal (RTS) noise associated with small size metal-oxide-semiconductor (MOS) transistors. | 06-13-2013 |
20130146748 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes pixels each of which has a photoelectric conversion portion that senses light and converts the sensed light into a charge; and an amplifying portion which is shared by a predetermined number of the pixels, amplifies the generated charge in the photoelectric conversion portion, and outputs a level of signal corresponding to the charge, wherein the a predetermined number of the pixels which share the amplifying portion are arranged in a first direction extending along a signal line via which the amplifying portion outputs the signal, and wherein a length of an area where the amplifying portion is formed along a second direction substantially intersecting the first direction is set to be equal to or more than a length of one pixel and to be less than a length of two pixels in the second direction. | 06-13-2013 |
20130146749 | IMAGE SENSOR AND METHOD OF READING OUT AN IMAGE SENSOR - An image sensor, in particular a CMOS image sensor, for electronic cameras includes a plurality of light-sensitive pixels arranged in rows and columns for generating exposure-dependent pixel signals. A plurality of column lines, at least one precharge circuit for charging or discharging the column lines and at least one column readout circuit for reading out the pixel signals of the respective column are associated with a respective column. The image sensor has at least one switching device which is adapted to couple, in a first switch state, one of the column lines of a respective column to the precharge circuit and another one of the column lines of the respective column to the column readout circuit. | 06-13-2013 |
20130146750 | LIGHT DETECTION APPARATUS AND LIGHT DETECTION METHOD - A light detection apparatus includes an image sensor, a signal obtaining unit, an exposure-time-period determination unit, and an exposure controller. The signal obtaining unit is configured to obtain a first dark current being a dark current of the image sensor in a first exposure time period, and a second dark current being a dark current of the image sensor in a second exposure time period. The exposure-time-period determination unit is configured to determine an optimal exposure time period of the image sensor based on the first dark current and the second dark current. The exposure controller is configured to control the image sensor to be exposed to light for the optimal exposure time period. | 06-13-2013 |
20130146751 | TIME DETECTION CIRCUIT, AD CONVERTER, AND SOLID STATE IMAGE PICKUP DEVICE - A time detection circuit may include: a delay unit configured to have a plurality of delay units, each of which delays and outputs an input signal, and start an operation at a first timing relating to an input of a first pulse; a latch unit configured to latch logic states of the plurality of delay units; a count unit configured to perform a count operation based on a clock output from one of the plurality of delay units; a count latch unit configured to latch a state of the count unit; and a latch control unit configured to enable the latch unit at a second timing relating to an input of a second pulse and cause the latch unit and the count latch unit to execute a latch at a third timing at which a predetermined time has elapsed from the second timing. | 06-13-2013 |
20130153748 | SOLID-STATE IMAGE SENSOR AND ELECTRONIC APPARATUS - A solid-state image sensor includes pixel units each having a group of pixels forming a polygonal outer shape to cover an entire light receiving plane. The polygonal outer shape has at least six equilateral sides and the group of pixels includes pixels receiving light of at least four different colors. | 06-20-2013 |
20130153749 | PHOTOELECTRIC CONVERSION DEVICE AND OPERATION METHOD FOR PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion unit generates an amount of charges. A differential amplifier has first and second input transistors and is configured to output a current signal based on the amount of charges. A reset voltage providing unit is configured to provide a reset voltage for input nodes of the first and second input transistors. A transfer transistor is electrically connected to, and configured to transfer a charge to, the input node of the first input transistor. A reset transistor is electrically connected to one of the input nodes, and configured to control an electrical connection between the reset voltage providing unit and the input node connected to the reset transistor. A connection transistor has first and second nodes and is configured to control an electrical connection between the input nodes. The first and second nodes are connected to the input nodes of the first and second input transistors, respectively. | 06-20-2013 |
20130153750 | IMAGING DEVICE - A horizontal driving control unit of an imaging device supplies dummy pulse signals to a horizontal driving unit at least at a part of period during a period from a start time point of each horizontal blanking period to a last signal sampling time point defined by a sampling control signal. | 06-20-2013 |
20130153751 | IMAGING APPARATUS - An imaging apparatus includes a sensor chip which has pad electrodes, to which electrical signals to be supplied to a pixel array are input, a glass substrate on which first wiring patterns connected to signal lines, to which signals of the pixel array are output, and second wiring patterns connected to pad electrodes are formed, an upper signal processing chip and a lower signal processing chip which have pad electrodes to which signals processed by signal processing circuits are output, and flexible printed boards which have FPC wiring electrically connected to the pad electrodes and FPC wiring electrically connected to the second wiring patterns formed on the glass substrate. | 06-20-2013 |
20130161485 | Image Sensor and Methods of Driving and Fabricating the Same - An image sensor includes a plurality of pixels, wherein each of the pixels includes a storage unit configured to electrically connect with a floating diffusion region and store photocharges therein, and a selector configured to selectively connect and disconnect the storage unit to and from the floating diffusion region in accordance with selection signals. The storage unit includes a capacitive element electrically connected to the floating diffusion region. The selector includes a switching element for selecting the pixel for connection to the floating diffusion region. The switching element is operated by the selection signals to selectively drive the capacitive element. | 06-27-2013 |
20130161486 | IMAGING DEVICE - An imaging device includes: a plurality of first pixels, each including a photodiode and in-pixel transistors and having a light-blocking metal film blocking part of light entering the respective first pixels; and a plurality of second pixels, each including a photodiode and in-pixel transistors and having no light-blocking metal film; and each of the photodiodes included in the first pixels or the second pixels is surrounded with a metal frame. | 06-27-2013 |
20130161487 | SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP DEVICE, AND SIGNAL READING METHOD - A solid-state image pickup device according to one embodiment of the present invention includes: a first substrate including first pixels arranged in a matrix; and a second substrate electrically coupled to the first substrate and including second pixels arranged in a matrix. The first pixel including a photoelectric conversion element configured to generate a color signal corresponding to an m-th color is the first pixel corresponding to the m-th color where m is an integer equal to one of 1 to n. The second pixel including the signal storing circuit configured to store the color signal corresponding to the m-th color is the second pixel corresponding to the m-th color. At least two second pixels of the second pixels corresponding to the same color are arranged in the same column on the second substrate. | 06-27-2013 |
20130161488 | SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE - A solid-state imaging device includes a plurality of AD conversion units respectively provided in a plurality of columns and each configured to convert a pixel signal converted by unit pixels provided in an associated column into digital data of N bits, and a plurality of data storage units respectively provided in the columns. The data storage units each include N flip-flop circuits. The solid-state imaging device further includes data switching units each configured to switch between a first state in which the digital data converted by the AD conversion unit is stored in the data storage unit of the associated column, and a second state in which the N flip-flop circuits in each of the data storage units are serially connected. | 06-27-2013 |
20130161489 | DISPLAY DEVICE CONTROL BASED ON INTEGRATED AMBIENT LIGHT DETECTION AND LIGHTING SOURCE CHARACTERISTICS - Systems and methods are provided for a display device including one or more methods for modifying the display brightness by automatically adapting to ambient lighting conditions. | 06-27-2013 |
20130161490 | PHOTOELECTRIC CONVERSION ELEMENT, DEFECT INSPECTING APPARATUS, AND DEFECT INSPECTING METHOD - Provided are a photoelectric conversion element, wherein the processing speed can be increased and resolution can be changed without increasing cost, and a defect inspecting apparatus and a defect inspecting method using the photoelectric conversion element. A photoelectric conversion element having a plurality of sensor pixels has a multiplexer and a plurality of horizontal transfer registers. Sensor pixels are divided into a plurality of blocks such that the sensor pixels correspond to each of the horizontal transfer registers. The photoelectric conversion element is configured such that charges of the blocks are read by means of the multiplexer via respective corresponding horizontal transfer registers, and are outputted via the multiplexer. | 06-27-2013 |
20130168533 | CMOS IMAGE SENSOR AND OPERATING METHOD THEREOF - The inventive concept relates to a CMOS image sensor and an operating method of the CMOS image sensor. The operating method according to an embodiment of the inventive concept includes generating photoelectrons at a photo sensor element during a first time; generating photoelectrons at the photo sensor element during a second time shorter than the first time; and sensing the photoelectrons generated at the photo sensor element. A gate voltage of a transfer transistor connected to the photo sensor element is set differently at the first time and the second time. With an embodiment of the inventive concept, a dynamic range of the CMOS image sensor increases. | 07-04-2013 |
20130175429 | IMAGE SENSOR, IMAGE SENSING METHOD, AND IMAGE CAPTURING APPARATUS INCLUDING THE IMAGE SENSOR - An image sensor that includes a pixel array including pixels that sample a plurality of modulation signals having different phases from the reflected light and that output pixel output signals corresponding to the plurality of modulation signals, the output pixel output signals being used to generate first images, an integral time adjusting unit that detects a change in an integral time applied to generate the first images such that the integral time adjusting unit compares intensities of the first images to a reference intensity and determines an adjusted integral time when the change in the integral time is detected, and when the change in the integral time is detected, the pixel array generates second images that are subsequent to the first images by applying the adjusted integral time determined by the integral time adjusting unit based on the first images. | 07-11-2013 |
20130175430 | SPARSELY-BONDED CMOS HYBRID IMAGER - A method and device for imaging or detecting electromagnetic radiation is provided. A device structure includes a first chip interconnected with a second chip. The first chip includes a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors. The second chip includes a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, a signal produced by the light sensors. A number of interconnects between the ROIC and the detector array can be less than one per light sensor or pixel. | 07-11-2013 |
20130175431 | DETECTOR HAVING LARGE AREA AND METHOD OF MANUFACTURING THE SAME - A detector includes a substrate; two first regions, each first region having a linear shape, and the two first regions being separated from each other on the substrate and arranged in parallel; and a pixel region provided between the two first regions and including a plurality of pixels, the pixel region including a plurality of second regions perpendicular to the two first regions, each of the two first regions including a peripheral circuit portion, each of the plurality of second regions including a driver line, and a width of each of the plurality of second regions being equal to or less than a width of a single pixel. | 07-11-2013 |
20130175432 | DRIVING DEVICE FOR SOLID-STATE IMAGE PICKUP DEVICE CAPABLE OF SELECTING PARALLEL NUMBER OF FETS - A driving circuit includes first through N-th selective operation driving portions selectively producing first through N-th selective operation driving signals, a selection circuit selectively driving the first through the N-th selective operation driving portions in response to an input signal and a control signal, and a supplying arrangement combining the first through the N-th selective operation driving signals to supply a combined driving signal to a solid-stage image pickup device. An n-th selective operation driving portion includes (M×2 | 07-11-2013 |
20130175433 | SCANNING MICROSCOPE - The present invention relates to a scanning microscope, which can acquire an undistorted image of a desired area of a sample using a simple configuration. When a sample is observed, a galvano-scanner rotates a scanning mirror based on a supplied driving signal, so as to scan the sample with illumination light. A sampling circuit samples an electric signal acquired by performing photoelectric conversion on observation light from the sample, in synchronization with a sampling clock. If the scanning mirror is driven so that the rotation angle thereof non-linearly changes with respect to time, the sampling circuit appropriately suppresses sampling based on the sampling clock, so that sampling is executed only when the scanning mirror is at a predetermined position. The present invention can be applied to a scanning microscope. | 07-11-2013 |
20130181112 | QUALITY OF OPTICALLY BLACK REFERENCE PIXELS IN CMOS iSoCs - Aspects relate to improved optically black reference pixels in a CMOS iSoc sensor. A system can include a pointer P | 07-18-2013 |
20130181113 | SOLID-STATE IMAGING EQUIPMENT - According to one embodiment, an image sensor, which may form part of a solid-state imaging device, such as a camera, comprises a photoelectric conversion element array, a light collection optical array, and a mirror unit that separates colors according to wavelength. Of the light that enters the image sensor, the colors are separated and at least a first colored ray is transmitted by the mirror unit to a dedicated photoelectric conversion element. The mirror unit reflects at least a second and third colored ray toward a laminate photoelectric conversion element for the second and third colored ray. | 07-18-2013 |
20130181114 | SOLID-STATE IMAGING DEVICE - According to one embodiment, an image sensor, which is a solid imaging device, includes a photoelectric conversion element array, a condensing optical element array, filter and reflector units, and a reflective unit. The reflective unit further reflects a light reflected by the filter and reflector units. The condensing optical element is arranged so that it contains a first photoelectric conversion element and a portion of a second or a third photoelectric conversion element, which are adjacent to the first photoelectric conversion element. The arrangement of the photoelectric conversion elements may comprise a cell. The reflective unit includes at least a first reflective surface and a second reflective surface. The first reflective surface is opposite to the filter and reflector units. The second reflective surface surrounds the filter and reflector units and the first reflective surface for each cell. | 07-18-2013 |
20130181115 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a read out circuit configured to convert the analog signal generated by a pixel into a digital signal. The read out circuit includes an analog circuit, a digital circuit and a logic circuit arranged between the analog circuit and the digital circuit. The analog circuit is formed within first and second semiconductor regions of first and second conductivity type. The logic circuit is formed within third and fourth semiconductor regions of the first and second conductivity types. The digital circuit is formed within a fifth and sixth semiconductor regions of the first and second conductivity types. The first to sixth semiconductor regions are isolated one from another. And, a number of elements included in the logic circuit is smaller than a number of elements included in the digital circuit. | 07-18-2013 |
20130181116 | IMAGE PICKUP APPARATUS AND METHOD OF DRIVING THE SAME - In an image pickup apparatus, a plurality of vertical signal lines are disposed in each pixel column. A pixel array includes pixels of first color and pixels of second color different from the first color. Two pixels of the first color are located at different row addresses and different column addresses. Signals from two pixels of the same color are processed simultaneously by a plurality of first column circuits. | 07-18-2013 |
20130181117 | IMAGE PICKUP APPARATUS AND METHOD FOR DRIVING THE SAME - An image pickup apparatus of the present invention includes a clipping circuit that clips the voltage of an input node of an amplifying unit in a pixel. The clipping circuit can operate at least in a time period in which a charge is transferred from a photoelectric conversion unit to the input node of the amplifying unit, and can switch among multiple clipping voltages. | 07-18-2013 |
20130181118 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA - An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. | 07-18-2013 |
20130187027 | IMAGE SENSOR WITH INTEGRATED AMBIENT LIGHT DETECTION - An image sensor having an image acquisition mode and an ambient light sensing mode includes a pixel array having pixel cells organized into rows and columns for capturing image data and ambient light data. Readout circuitry is coupled via column bit lines to the pixels cells to read out the image data along the column bit lines. An ambient light detection (“ALD”) unit is selectively coupled to the pixel array to readout the ambient light data and to generate an ambient light signal based on ambient light incident upon the pixel array. Control circuitry is coupled to the pixel array to control time sharing of the pixels cells between the readout circuitry during image acquisition and the ALD unit during ambient light sensing. | 07-25-2013 |
20130187028 | IMAGERS HAVING VARIABLE GAIN AND RELATED STRUCTURES AND METHODS - The present application relates to imagers having variable gain and related structures and methods. The gain of the imager may vary between rows of the imager. Such variability may be achieved by suitable design of a readout integrated circuit (ROIC). The ROIC may provide different integration period durations for different rows of the imager. Different integration capacitances may be provided for pixels of different rows of the imager. The gain of a column buffer may be varied when operating on output signals of pixels from different rows. | 07-25-2013 |
20130193305 | VARIABLE VOLTAGE ROW DRIVER FOR CMOS IMAGE SENSOR - An example image sensor includes a plurality of pixels arranged in an array of columns and rows, a row driver, and a control logic circuit. The row driver is coupled to pixels in a row of the array to provide a variable driving voltage to drive transistors included in the pixels of the row. The control logic circuit is coupled to provide one or more control logic signals to the row driver. The row driver adjusts a magnitude of the driving voltage in response to the one or more control logic signals. | 08-01-2013 |
20130193306 | ANALOG-DIGITAL CONVERTER, ANALOG-DIGITAL CONVERSION METHOD, IMAGE PICKUP DEVICE, METHOD OF DRIVING THE SAME, AND CAMERA - An analog-digital converter includes: comparators disposed to correspond to analog signals which are converted into digital signals and configured to compare a voltage value of the analog signal, which is converted into the digital signal, with a voltage value of a predetermined reference signal; counters disposed to correspond to the comparators and configured to count a count value at the time point when the comparison process of the corresponding comparator is finished; and a determiner configured to determine a time point when all the comparators finish their comparison processes. | 08-01-2013 |
20130193307 | SYSTEM, METHOD, AND DEVICE FOR SUPPRESSION OF DARK CURRENT - A method, system and device for reducing dark current, by clamping the voltage across the photodiode to about zero using local storage of charge, in an array of pixel cells in which each pixel cell has a photodiode configured to receive light and generate a photocharge during an integration period. | 08-01-2013 |
20130193308 | Multiband Photodetector Utilizing Unipolar and Bipolar Devices - Multi-band photodetectors can be formed by series connecting unipolar and, optionally, bipolar semiconductor structures, each having different photodetection bands. Under default mode of operation, the detector with highest resistance and lowest current will be the current limiting device and will be the active photodetector. When the active photodetector is illuminated with strong light in its own detection band it will be optically biased. This active photodetector will no longer be the highest resistance device, and the next photodetector will be the active photodetector. Repeating this operation pattern, allows switching photodetection bands of the multi-band photodetector. The resistances, dark current and photocurrent of the devices should be engineered to have proper switching. Moreover, the illuminating surface, and photodetector placement should be optimized for proper light biasing. The current passing through the device will always be equal to the current of the active photodetector. | 08-01-2013 |
20130193309 | IMAGE PICKUP APPARATUS CAPABLE OF CONTROLLING EXPOSURE DURING MOTION WITH HIGH SHUTTER SPEED, CONTROL METHOD THEREFOR, AND STORAGE MEDIUM - An image pickup apparatus which is capable of suppressing changes in luminance during motion with high shutter speed while minimizing image degradation. An image pickup device accumulates electric charge corresponding to an amount of light incident thereon. An amplification unit amplifies a signal obtained as a result of accumulating electric charge in the image pickup apparatus. A control unit controls an electric charge accumulation time period in the image pickup device. An adjustment unit adjusts an amplification factor for the amplification unit. In a case where the control unit changes the electric charge accumulation time period while the image pickup device is repeatedly accumulating electric charge, the adjustment unit adjusts an amplification factor in accordance with the amount of change in the electric charge accumulation time period, and after adjustment, the adjustment unit brings the adjusted amplification factor close to an amplification factor before adjustment in steps. | 08-01-2013 |
20130193310 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM - A photoelectric conversion apparatus includes a first capacitance and a second capacitance that hold a signal, a switch provided between a signal line and the first capacitance, a capacitance adjustment unit electrically connected to the second capacitance, and a connection unit configured to electrically connect the first capacitance provided to one of signal processing units to the second capacitance provided to another one of the signal processing units. | 08-01-2013 |
20130193311 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - The solid-state imaging device includes an imaging region having pixel units two-dimensionally arranged, each of the pixel units including a photodiode formed on a semiconductor substrate. The imaging region includes, as a unit of arrangement, a pixel block having four of the pixel units arranged in a two-by-two matrix. The pixel block includes a red pixel detecting a red signal, a blue pixel detecting a blue signal, a white pixel detecting a first luminance signal, and another white pixel detecting a second luminance signal. A light attenuation filter is provided above the other white pixel to reduce transmittance of light in a visible light region. | 08-01-2013 |
20130193312 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a semiconductor layer, implanting second-conductivity-type impurity ions into the semiconductor layer from the front side of the layer to form second-conductivity-type photoelectric conversion parts and forming a part where no ion has been implanted into a pixel separation region, forming at the surface of the semiconductor layer a signal scanning circuit for reading light signals obtained at the photoelectric conversion parts after removing the mask, and removing the semiconductor substrate and a buried insulating layer from the semiconductor layer after causing a support substrate to adhere to the front side of the semiconductor layer. | 08-01-2013 |
20130193313 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels | 08-01-2013 |
20130200251 | IMAGING SENSORS WITH OPTICAL CAVITY PIXELS - An image sensor may be provided having a pixel array that includes optical cavity image pixels. An optical cavity image pixel may include a photosensitive element in a substrate and a reflective cavity formed from a frontside reflector that is embedded in an intermetal dielectric stack, a backside reflector formed in a dielectric layer above the photosensor that partially covers the photosensor, and sidewall reflectors formed in the substrate between adjacent photosensors using deep trench isolation techniques. Each optical cavity image pixel may also include a light-guide trench above the photosensor that guides light into the reflective cavity for that pixel. Each optical cavity pixel may also include color filter material in the trench. Light that is guided into the reflective cavity by the light-guide trench may experience multiple reflections from the reflectors of the reflective cavity before being absorbed and detected by the photosensor. | 08-08-2013 |
20130200252 | SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - A solid-state image pickup element | 08-08-2013 |
20130200253 | MULTIPLEXED READ-OUT ARCHITECTURE FOR CMOS IMAGE SENSORS - This invention targets improvement in CMOS sensors using a multiplexed read-out architecture in which pixels are output at the pixel V | 08-08-2013 |
20130206959 | BLACK LEVEL CORRECTION FOR IMAGING PIXELS - A technique for obtaining a corrected pixel value is disclosed. The technique includes measuring a first dark current of a dark calibration pixel of a pixel array and measuring a second dark current of an imaging pixel of the pixel array. A dark current ratio is calculated based on the first dark current and the second dark current. An image charge is acquired with the imaging pixel where the image charge is accumulated over a first time period. A charge is acquired with the dark calibration pixel where the charge is accumulated over a second time period. The second time period is approximately equal to the first time period divided by the dark current ratio. A corrected imaging pixel value is calculated using a first readout from the imaging pixel and a second readout from the dark calibration pixel. | 08-15-2013 |
20130206960 | PHOTO-SENSING PIXEL CIRCUIT AND IMAGE SENSOR - A photo-sensing pixel circuit including a photo-sensing part, a transfer transistor, a plurality of adjustment transistors, and an output circuit is provided. The photo-sensing part senses a light source and generates a corresponding number of electrons. The transfer transistor coupled to the photo-sensing part has a floating node and converts the electrons generated by the photo-sensing part into a voltage signal. The adjustment transistors have a first end and a second end, wherein the first end is coupled to a power supply, and the second end is coupled to the transfer transistor via the floating node. The output circuit coupled to the transfer transistor outputs a sensing signal according to the voltage signal, wherein the sensing signal is corresponding to the brightness of the light source. The adjustment transistors operate in at least two operation modes. Different numbers of the adjustment transistors are turned on in different operation modes. | 08-15-2013 |
20130206961 | SOLID-STATE IMAGE SENSING DEVICE - An image sensor comprises plural sets of a unit pixel outputting a pixel signal based on an electric charge generated through photoelectric conversion and a conversion unit converting the pixel signal into a digital signal. A reference signal source generates reference signals and supplies the generated reference signals to the conversion unit through signal lines. The conversion unit of each set comprises a comparator which compares the level of the reference signal with that of the pixel signal, a count circuit which counts a clock based on the comparison processing, a selection circuit which selects, among the signal lines, a signal line to be selectively connected to the input of the comparator, and a switch which selectively connects the selected signal line to the input of the comparator, and selectively connects a load to an unselected one of the signal lines. | 08-15-2013 |
20130206962 | IMAGING SYSTEMS WITH BACKSIDE ISOLATION TRENCHES - An image sensor such as a backside illumination image sensor may be provided with analog circuitry, digital circuitry, and an image pixel array on a semiconductor substrate. Trench isolation structures may separate the analog circuitry from the digital circuitry on the substrate. The trench isolation structures may be formed from dielectric-filled trenches in the substrate that isolate the portion of the substrate having the analog circuitry from the portion of the substrate having the digital circuitry. The trench isolation structures may prevent digital circuit operations such as switching operations from negatively affecting the performance of the analog circuitry. Additional trench isolation structures may be interposed between portions of the substrate on which bond pads are formed and other portions of the substrate to prevent capacitive coupling between the bond pad structures and the substrate, thereby enhancing the high frequency operations of the image sensor. | 08-15-2013 |
20130206963 | METHODS, SYSTEMS, AND DEVICES FOR MULTIBEAM COHERENT DETECTION AND SPECKLE MITIGATION - Methods, systems, and devices are provided that may facilitate multibeam coherent detection and/or speckle mitigation. For example, some embodiments provide for multiple simultaneous independent speckle realizations in light reflected from an actively illuminated target while also may simultaneously provide reference beams inherently aligned to each speckle. These tools and techniques may facilitate coherent detection of light returned from a target. In some cases, this may provide the basis for substantial speckle mitigation. With the addition of illumination phase or frequency modulation and/or intelligent algorithmic methods, some designs may utilize the multiple speckle returns to actively mitigate speckle noise, and can further be used to separately measure speckle phase to implement interferometric resolution surface tilt measurement and/or surface imaging. These tools and techniques may be utilized for other purposes related to multibeam coherent detection and/or speckle mitigation. | 08-15-2013 |
20130206964 | SOLID-STATE IMAGING APPARATUS WITH EACH PIXEL INCLUDING A PHOTOELECTRIC CONVERSION PORTION AND PLURAL HOLDING PORTIONS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion. | 08-15-2013 |
20130206965 | DRIVING METHOD FOR SOLID-STATE IMAGING APPARATUS, AND IMAGING SYSTEM - A driving method for a solid-state imaging apparatus including a plurality of pixels is provided. A potential of the electric charge accumulated in an accumulating portion is lower than a potential of a first transferring portion for connecting a photoelectric conversion element to the accumulating portion for accumulating an electric charge. The driving method includes: a first driving mode setting a start and an end of an operation of accumulating the electric charge in each of the plurality of pixels common for the plurality of pixels; and a second driving mode setting the start and the end of the operation of accumulating the electric charge in each of the plurality of pixels common for the pixels in each row. | 08-15-2013 |
20130206966 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - Also provided is a method for manufacturing a photoelectric conversion device including: a first process where a plurality of pixel electrodes | 08-15-2013 |
20130214125 | METHOD AND APPARATUS FOR AMBIENT LIGHT DETECTION - Electronic devices may be provided with image sensors. Image sensors may be configured to capture images during imaging operations and monitor ambient light levels during non-imaging operations. An image sensor may include image pixels that receive light and dark pixels that are prevented from receiving light. An image sensor may include an ambient light detection circuit. The ambient light detection circuit may include an oscillator, timing and control circuitry, and a counter. The oscillator may be switchably coupled to the image pixels and the dark pixels. The counter may be configured to count up oscillator cycles of the oscillator while the oscillator is coupled to the image pixels and to count down oscillator cycles of the oscillator while the oscillator is coupled to the dark pixels. The counter may provide a count value that depends on a signal from the image pixels and a signal from the dark pixels. | 08-22-2013 |
20130214126 | IMAGE PICKUP APPARATUS - An image pickup apparatus includes a plurality of pixels each including a photoelectric conversion unit, an amplification element configured to amplify a signal based on a signal charge generated in the photoelectric conversion unit, and a first signal holding unit and a second signal holding unit located at a stage following the first signal holding unit and arranged on an electric path between the photoelectric conversion unit and an input node of the amplification element, in which a coverage by a light-shielding member of the first signal holding unit is lower than a coverage by a light-shielding member of the second signal holding unit. | 08-22-2013 |
20130214127 | PHOTOELECTRIC CONVERSION APPARATUS, METHOD FOR DRIVING THE SAME, AND PHOTOELECTRIC CONVERSION SYSTEM - A photoelectric conversion apparatus includes a pixel array configured to include a first analog-to-digital conversion unit and a second analog-to-digital conversion unit, a first electrical signal supply unit configured to supply an electrical signal to the first analog-to-digital conversion unit, and a second electrical signal supply unit configured to supply an electrical signal to the second analog-to-digital conversion unit. | 08-22-2013 |
20130214128 | IMAGING APPARATUS - An imaging apparatus includes: a plurality of pixels each including a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection; and a signal holding unit in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. | 08-22-2013 |
20130214129 | IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, AND IMAGE PICKUP APPARATUS DRIVING METHOD - Each of multiple pixels includes a photoelectric conversion unit. A first holding unit is configured to hold a charge generated by the photoelectric conversion unit, at a location different from location of the photoelectric conversion unit. A second holding unit is configured to hold a charge held by the first holding unit at a location different from locations of both of the first holding unit and the photoelectric conversion unit. An amplifying unit includes an input node different from the second holding unit and is configured to output a signal based on a charge transferred to the input node from the second holding unit. A first discharge unit includes a charge draining node which is electrically connected to a line where a predetermined voltage is supplied. The first discharge unit discharges a charge held by the first holding unit to the charge draining node. | 08-22-2013 |
20130214130 | IMAGING DEVICE AND IMAGING APPARATUS - An imaging apparatus includes an imaging device which includes a plurality of pixels and is operable to generate image information for each pixel from received light. Each of the plurality of pixels includes one of first to fourth color filters. Each of the first to the fourth color filters has different spectral characteristics. The fourth color filter has the highest light transmittance among the color filters. The first to the fourth color filters are arranged in a specific array. The specific array has first to third centroids which make a Bayer array. | 08-22-2013 |
20130214131 | METHOD FOR DRIVING PHOTOELECTRIC CONVERSION APPARATUS - In a photoelectric conversion apparatus including a plurality of pixels arranged in a matrix, each of the pixels including a photoelectric conversion unit, a first holding unit configured to hold electric charge, a second holding unit configured to hold electric charge, a first transfer unit configured to connect the photoelectric conversion unit and the first holding unit, a second transfer unit configured to connect the first holding unit and the second holding unit, and a third transfer unit configured to connect the photoelectric conversion unit and a power supply, a first operation mode and a second operation mode are selectively executed. | 08-22-2013 |
20130214132 | MEDIUM SENSING APPARATUS AND FINANCIAL DEVICE - Provided is a medium sensing apparatus. The medium sensing apparatus comprises a first frame disposed on a transfer path of a medium, the first frame having a plurality of first sensor grooves, a second frame facing the first frame, the second frame having a plurality of second sensor grooves, a plurality of first contact image sensors disposed in the plurality of first sensor grooves, respectively, and a plurality of second contact image sensors disposed in the plurality of second sensor grooves, respectively. At least one of the plurality of first sensor grooves and at least one of the plurality of second sensor grooves are disposed to partially overlap with each other. | 08-22-2013 |
20130221194 | ENHANCED PIXEL CELL ARCHITECTURE FOR AN IMAGE SENSOR - A backside illuminated pixel array having a buried channel source follower of a pixel cell which is coupled to output an analog signal directly to a bitline as image data. In one embodiment, the buried channel source follower of a pixel cell is coupled to a source follower power line having a line impedance which is less than that of one or more other signal lines for operating that same pixel cell. In another embodiment, a source follower power line has a line impedance which is less than at least one of a line impedance of a transfer signal line or a line impedance of a reset signal line. | 08-29-2013 |
20130221195 | SINGLE PACKAGE IMAGING AND INERTIAL NAVIGATION SENSORS, AND METHODS OF MANUFACTURING THE SAME - Apparatus and methods of manufacturing an image sensor and inertial navigation sensors encapsulated within a single package. The single package may encapsulate one integrated circuit die comprising the imaging sensor and the inertial navigation sensors. Alternatively, the single package may encapsulate a plurality of integrated circuit dice comprising the imaging sensor and the inertial navigation sensors. | 08-29-2013 |
20130221196 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - According to one embodiment, an image sensor includes an image-sensing element region formed by arranging a plurality of image-sensing elements on a semiconductor substrate and element isolation portions formed to isolate the image-sensing elements, and a logic circuit region formed in a region different from the image-sensing element region on the substrate and including a plurality of gate patterns. Further, dummy element isolation portions are arranged with a constant pitch in the boundary region between the image-sensing element region and the logic circuit region. | 08-29-2013 |
20130221197 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM HAVING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region. | 08-29-2013 |
20130221198 | RADIATION DETECTION APPARATUS - A radiation detection apparatus include a sensor substrate having a pixel array and a connection terminal connected to the pixel array on a first surface; and a scintillator layer that is arranged on the first surface side; a circuit board that is arranged on a side of the scintillator layer that is opposite to a side facing the sensor substrate; and a connection portion configured to connect the connection terminal to the circuit board. The scintillator layer is arranged so as to cover the pixel array but expose the connection terminal. The circuit board and the connection portion are arranged in locations where they do not protrude from the outer edge of the first surface of the sensor substrate. | 08-29-2013 |
20130221199 | PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus of the present invention includes: a plurality of pixel arrays having different colors and arrayed in the subsidiary scanning direction when the photoelectric conversion apparatus scans a document relatively in the subsidiary scanning direction, each of the plurality of pixel arrays including a plurality of pixels that perform photoelectric conversion; and a pulse controlling unit which controls pulse positions of control pulses that control operations of the pixels, wherein the pulse controlling unit controls the pulse positions of the control pulses for the pixel arrays of each color, according to color offset quantities in the subsidiary scanning direction of the pixel arrays of each color. | 08-29-2013 |
20130221200 | IMAGE PICKUP APPARATUS CAPABLE OF PREVENTING FOREIGN MATTERS FROM ADHERING TO OPTICAL MEMBER - An image pickup apparatus capable of preventing foreign matters from adhering to an optical member and excellent in assembly workability. Alight shield mask has a base member affixed to an object side of an optical low pass filter, which is disposed on an object side of an imaging device. An electrically conductive sheet affixed to the base member of the light shield mask is urged by an electrically conductive urging member toward the optical low pass filter. Through the electrically conductive sheet and the electrically conductive urging member mounted to a main unit chassis, the optical low pass filter is electrically connected to the main unit chassis that provides reference potential. | 08-29-2013 |
20130221201 | IMAGE SENSOR FOR MINIMIZING VARIATION OF CONTROL SIGNAL LEVEL - There is provided an image sensor capable of minimizing level variations of a control signal inputted to a unit pixel. The image sensor includes a plurality of unit pixels, each supplied with a first power voltage for converting an inputted signal into an electrical signal; and a control block supplied with a second power voltage for providing control signals to each unit pixel in order to stably operate each unit pixel, wherein the control block includes a conversion unit for outputting the control signals under the first power voltage, not the second power voltage. | 08-29-2013 |
20130221202 | SOLID STATE IMAGE PICKUP APPARATUS - An apparatus includes a plurality of pixels each including a charge storage part, a photoelectric conversion part, a first transfer part and a second transfer part, when a signal charge generated during one period is transferred to an amplifier, a control unit supplies pulses such that a turning-on pulse is supplied to the second transfer part while supplying a turning-off pulse to the first transfer part thereby transferring the stored signal charge to the amplifier, a turning-on pulse is then supplied to a reset part to reset the signal charge transferred to the amplifier, and subsequently a turning-on pulse is supplied to the first transfer part and the second transfer part to transfer the signal charge held in the photoelectric conversion part to the amplifier. | 08-29-2013 |
20130228671 | CMOS SENSOR ARRAY - A CMOS sensor includes a pixel configured to output a voltage based on incident light received by the pixel. A first circuit is coupled to the pixel and is configured to determine a reset voltage of the pixel. A second circuit is coupled to the first circuit and is configured to select a gain level based on the reset voltage of the pixel. A gain circuit is coupled to the second circuit and is configured to set a voltage level of the gain selected by the second circuit. | 09-05-2013 |
20130228672 | LINE MEMORY DEVICE AND IMAGE SENSOR INCLUDING THE SAME - A line memory device includes a plurality of memory cells, a data line pair, a sense amplifier and an output unit. The plurality of memory cells are disposed adjacent to each other in a line. The data line pair is coupled to the memory cells to sequentially transfer memory data bits stored in the memory cells to the sense amplifier. The sense amplifier is configured to amplify the memory data bits that are sequentially transferred through the data line pair by corresponding delay times which are different from each other. The output unit samples an output of the sense amplifier to sequentially output retimed data bits of the memory data bits in response to a read clock signal. The read clock signal has a cyclic period which is less than a maximum delay time among the delay times. | 09-05-2013 |
20130228673 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus is provided which includes a plurality of pixels ( | 09-05-2013 |
20130234004 | IMAGING DEVICE - In an imaging device, one end of a capacitive element is connected to a second input terminal to which a reference signal Ramp is applied, and the other end of the capacitive element is connected to a voltage source during a reset operation and to a voltage source after the reset operation through a switching element. As a result, the voltage of the second input terminal is changed such that a voltage difference between the first input terminal and the second input terminal becomes a voltage guaranteeing a comparison operation after the reset operation. | 09-12-2013 |
20130234005 | IMAGE SENSOR AND OPTICAL INTERACTION DEVICE USING THE SAME THEREOF - An image sensor for detecting a first and a second image light in different directions is disclosed. The image sensing device comprises a polarization beam splitter, a liquid crystal switch, a polarizer, a lens module and an image sensing device. The polarization beam splitter receives and splits the first and the second image light respectively into a first penetrative light, a first reflective light, a second penetrative light and a second reflective light. The liquid crystal switch controls the phase delay of the first and the second reflective light. The polarizer is disposed on the light emitting side of the liquid switch to control the passage of the first or the second reflective light. The lens module focuses the first or the second reflective light at a focal point. The image sensing device is disposed at the focal point to sense the focused first or second reflective light. | 09-12-2013 |
20130240708 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device including a pixel array having a plurality of pixels, each of which includes a photoelectric converting unit and a multilayer interference filter. The multilayer interference filter includes an upper laminated structure, a lower laminated structure, and a control structure. Both the multilayer interference filter in a first pixel and the multilayer interference filter in a second pixel which is more distant from a center of the pixel array than the first pixel are disposed to selectively guide a light having a first color to the photoelectric converting unit. The control structure in the first pixel and the control structure in the second pixel have different configurations from each other in such a manner that a filter characteristic of the multilayer interference filter in the first pixel is equivalent to that of the multilayer interference filter in the second pixel. | 09-19-2013 |
20130240709 | SOLID-STATE IMAGING DEVICE AND PORTABLE INFORMATION TERMINAL - A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof. | 09-19-2013 |
20130240710 | IMAGING APPARATUS AND IMAGE SENSOR THEREOF - An imaging apparatus and an image sensor, where the imaging apparatus includes a lens unit and an image sensor including a plurality of image detection pixels for detecting an image formed by the lens unit and a plurality of focus detection pixels for detecting a focus of the image, wherein the plurality of focus detection pixels are arranged in a non-uniform pattern in which arrangements within shared intervals between the plurality of focus detection pixels are not equal to each other. Accordingly, the focus of an image formed on the image sensor can be accurately measured while a loss of image quality of the image formed on the image sensor is minimized. | 09-19-2013 |
20130240711 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD, AND ELECTRONIC APPARATUS - Disclosed is a solid-state imaging device including a pixel array, a pixel signal generation part, and a control part. The pixel signal generation part includes a comparator and a counter. In a case where an enable signal is supplied from the control part, a count value of the counter in a D-phase period where a signal level is detected is set as a limit value regardless of an output of the comparator when a count value of the counter in a P-phase period where a reset level is detected is a limit value. | 09-19-2013 |
20130240712 | RADIATION IMAGING APPARATUS AND IMAGING SYSTEM - A radiation imaging apparatus, comprising an imaging unit in which a plurality of pixels are arranged to form a plurality of rows and a plurality of columns, and a control unit configured to control the imaging unit so as to perform reset operation for initializing each of the plurality of pixels repeatedly, and readout operation, after the reset operation, for reading out a signal from each of the plurality of pixels sequentially, wherein one cycle length of the reset operation is shorter than a period of time required for the readout operation, and a pulse width of a signal supplied to each of the plurality of pixels in the reset operation is shorter than a pulse width of a signal supplied to each of the plurality of pixels in the readout operation. | 09-19-2013 |
20130240713 | PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes: a plurality of pixels ( | 09-19-2013 |
20130240714 | OPTICAL SENSOR, LENS MODULE, AND CAMERA MODULE - An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter. | 09-19-2013 |
20130240715 | COLOR IMAGING ELEMENT - A color imaging element including color filters arranged on pixels, wherein the color filter array includes a basic array pattern including first filters corresponding to a first color that most contributes to obtaining luminance signals and second filters corresponding to two or more second colors other than the first color, the basic array pattern repeatedly arranged in the horizontal and vertical directions, one or more first filters are arranged in each line in horizontal, vertical, and oblique directions of the color filter array, one or more second filters are arranged in each line in the horizontal and vertical directions of the color filter array in the basic array pattern, and a proportion of the number of pixels of the first color corresponding to the first filters is greater than proportions of the numbers of pixels of each color of the second colors corresponding to the second filters. | 09-19-2013 |
20130248684 | IMAGE SENSOR WITH WIDE DYNAMIC RANGE AND METHOD OF OPERATING THE SAME - An image sensor in accordance with an embodiment of the present invention includes a pixel array configured to include a plurality of pixels corresponding to a plurality of rows and a plurality of columns that include one or more first column groups and one or more second column groups and are disposed in a direction crossing the plurality of rows and a data sampling unit configured to sample pixel data of a first column group of a first row and to sample pixel data of a second column group of a second row, wherein the first column group and the second column group are alternatively arranged. | 09-26-2013 |
20130248685 | METHODS OF DRIVING IMAGE SENSORS - A method of driving an image sensor including a plurality of unit pixels, each unit pixel having photoelectric conversion and floating diffusion regions, may include resetting a potential level of the floating diffusion region by a first voltage level, the first voltage level being lower than a power supply voltage; converting incident light into electrical charges in the photoelectric conversion region; and accumulating at least one of collected, first overflowed, and second overflowed electrical charges in the floating diffusion region based on the incident light, the collected electrical charges indicating electrical charges that are collected in the photoelectric conversion region, the first overflowed electrical charges indicating charges overflowed from the photoelectric conversion region within potential well capacity of the floating diffusion region, and the second overflowed electrical charges indicating charges overflowed from the photoelectric conversion region over the potential well capacity of the floating diffusion region. | 09-26-2013 |
20130248686 | SOLID-STATE IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME - A solid-state image sensing device has a plurality of detection units periodically arranged as a two-dimensional array on a substrate. Each of the detection units includes a visible light detector and an infrared light detector arranged on the same optical axis in a vertical direction so that the visible light detector and the infrared light detector overlap with each other. Each of the detection units also includes a signal readout circuit provided in the substrate so as to output signals of the visible light detector and the infrared light detector as time-series signals. | 09-26-2013 |
20130248687 | SELF-SCALED VOLTAGE BOOSTER - Various technologies described herein pertain to automatically adjusting the strength of a voltage booster of an image sensor. A self-scaled voltage booster includes a regulator, a controller, and two or more charge pumps that can be selectively enabled and disabled by the controller. The controller generates controller signals for the charge pumps based on a duty cycle of a regulator signal generated by the regulator. Moreover, the controller can maintain the controller signals without modification for at least a predetermined minimum period of time after a prior modification of at least one of the controller signals. Further, the controller can include a duty cycle and delay module (or a plurality of duty cycle and delay modules) that detects the duty cycle of the regulator signal and maintains the controller signals without modification for at least the predetermined minimum period of time. | 09-26-2013 |
20130248688 | IMAGE PICKUP APPARATUS - An embodiment of an image pickup apparatus according to the present invention includes, on a semiconductor substrate, an imaging area having a plurality of pixel columns and a plurality of column circuits each of which is provided for each pixel column or a plurality of pixel columns. Each of the column circuits has a first circuit block and a second circuit block, and the first and second circuit blocks receive a bias voltage via a common wire. The first circuit block includes an amplifier circuit. The second circuit block is configured to be capable of switching between a first mode and a second mode with smaller power consumption than the first mode. A shift period from the second mode to the first mode by the second circuit block is a period excluding a period during which an amplifier circuit in the first circuit block is performing an amplifying operation. | 09-26-2013 |
20130248689 | TIME-DELAY INTEGRATION IMAGING METHOD AND APPARATUS USING A HIGH-SPEED IN-PIXEL ANALOG PHOTON COUNTER - A high speed analog photon counter and method is provided. In one aspect, the method includes accumulating an electric charge in a capacitor of a circuit electrically coupled to a current source. The method further includes comparing the electric charge accumulated in the capacitor of the circuit with a reference voltage through a comparator of the circuit electrically coupled to an output of the capacitor. The method also includes increasing a speed of operation of a measurement device through implementing the circuit inside a pixel. The method further includes transferring the accumulated electric charge to a circuit of an adjacent pixel and synchronizing the transfer of the accumulated electric with a movement of an object captured by an image sensor device before implementing a time-delay integration operation. | 09-26-2013 |
20130248690 | SENSOR DEVICE WITH DOUBLE TELECENTRIC OPTICAL SYSTEM - The invention relates to a double telecentric optical system ( | 09-26-2013 |
20130256509 | DUAL SOURCE FOLLOWER PIXEL CELL ARCHITECTURE - Techniques for providing a pixel cell which includes two source follower transistors. In an embodiment, a first source follower transistor of a pixel cell and a second source follower transistor of the pixel cell are coupled in parallel with one another, where the source follower transistors are each coupled via their respective gates to a floating diffusion node of the pixel cell. In another embodiment, the first source follower transistor and second source follower transistor each operate based on a voltage of the floating diffusion node to provide a respective component of an amplification signal, where the pixel cell outputs an analog signal based on the amplification signal. | 10-03-2013 |
20130256510 | IMAGING DEVICE WITH FLOATING DIFFUSION SWITCH - Embodiments of the invention describe utilizing dual floating diffusion switches to enhance the dynamic range of pixels having multiple photosensitive elements. The insertion of dual floating diffusion switches between floating diffusion nodes of said photosensitive elements allows the conversion gain to be controlled and selected for each photosensitive element of a pixel. Furthermore, in embodiments utilizing a photosensitive element for high conversion gains, the value of high conversion gain for the respective photosensitive element maybe increased due to the separation between floating diffusion nodes, enabling high sensitivity for low-light conditions. | 10-03-2013 |
20130256511 | IMAGE SENSOR - An image sensor includes, inter alia: a first and second capacitors arranged serially between an input terminal and a first node, a first comparing unit connecting to a first reference signal and a connecting node of the first and second capacitors, and an output terminal connecting to the first node wherein the first comparing unit provides first or second preliminary ramp signals on the first node, first and second switches arranged between the first comparing unit and the first capacitor to selectively connect the first capacitor to a ground voltage or the input terminal, a third capacitor connecting to the second capacitor in parallel, a third switch selectively connecting the first node to the third capacitor, a first ramp signal output unit generating a first ramp signal with the first preliminary ramp signal provided, and a second ramp signal output unit generating a second ramp signal using the second preliminary ramp signal. | 10-03-2013 |
20130256512 | SOLID STATE IMAGING DEVICE, METHOD OF OUTPUTTING IMAGING SIGNAL AND ELECTRONIC DEVICE - There is provided a solid state imaging device including a first analog-to-digital converting unit that compares a level of an analog reference signal with a first inclination with a level of an analog pixel signal output from a pixel array unit, and converts the analog pixel signal into a first digital pixel signal, a second analog-to-digital converting unit that compares a level of an analog reference signal with a second inclination that is different in inclination from the analog reference signal with the first inclination with a level of the analog pixel signal, and converts the analog pixel signal into a second digital pixel signal, and a digital compositing unit that composites the first digital pixel signal with the second digital pixel signal, and outputs a composite result. | 10-03-2013 |
20130264465 | SHARED TERMINAL OF AN IMAGE SENSOR SYSTEM FOR TRANSFERRING IMAGE DATA AND CONTROL SIGNALS - An example image sensor system includes an image sensor having a first terminal and a host controller coupled to the first terminal. Logic is included in the image sensor system, that when executed transfers analog image data from the image sensor to the host controller through the first terminal of the image sensor and also transfers one or more digital control signals between the image sensor and the host controller through the same first terminal. | 10-10-2013 |
20130264466 | SHARED TERMINAL OF AN IMAGE SENSOR SYSTEM FOR TRANSFERRING CLOCK AND CONTROL SIGNALS - An example image sensor system includes an image sensor having a first terminal and a host controller coupled to the first terminal. Logic is included in the image sensor system, that when executed transfers clock signals from the host controller to the image sensor through the first terminal of the image sensor and also transfers one or more digital control signals between the image sensor and the host controller through the same first terminal. | 10-10-2013 |
20130264467 | DOUBLE-SIDED IMAGE SENSOR - An example double-sided image sensor includes a semiconductor die, a photodetector, a charge-to-voltage converter, and support circuitry. The semiconductor die has a first side and a second side that is opposite the first side. The photodetector is disposed within the semiconductor die on the first side for accumulating an image charge in response to light incident on the first side. The charge-to-voltage converter is disposed within the semiconductor die on the first side. The transfer gate is also disposed on the first side of the semiconductor die between the photodetector and the charge-to-voltage converter to transfer the image charge from the photodetector to the charge-to-voltage converter. Support circuitry of the image sensor is disposed within the semiconductor die on the second side and is electrically coupled to the charge-to-voltage converter. | 10-10-2013 |
20130264468 | SOLID-STATE IMAGING APPARATUS AND ELECTRONIC DEVICE - Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other. | 10-10-2013 |
20130264469 | SOLID-STATE IMAGE DEVICE, METHOD OF FABRICATING THE SAME, AND ELECTRONIC APPARATUS - There is provided a solid-state image device, including a semiconductor substrate, a circuit formed on a first face of the semiconductor substrate, a grid pattern provided on a second face of the semiconductor substrate, and a semiconductor layer formed within the grid pattern and having a shape whose cross-sectional surface area in a plane parallel to a surface of the semiconductor substrate decreases with increasing distance from the semiconductor substrate. | 10-10-2013 |
20130270419 | Compact Camera Module - A miniature camera module component is formed by creating replicated lens shapes on a protective cover wafer and depositing material to form multiple cavities with the replicated lens shapes respectively disposed therein. A carrier wafer is coupled to the protective cover wafer before it is diced. An intermediate wafer is coupled to the protective cover wafer, and the carrier wafer is removed. An image sensor wafer is coupled to the protective cover wafer, and the intermediate wafer is removed. | 10-17-2013 |
20130270420 | CORRELATED DOUBLE SAMPLING CIRCUIT AND IMAGE SENSOR INCLUDING THE SAME - A correlated double sampling (CDS) circuit included in an image sensor includes a sampling unit and a timing controlled band-limitation (TCBL) unit. The sampling unit is configured to generate an output signal by performing a CDS operation with respect to a reset component of an input signal and an image component of the input signal based on a ramp signal, the input signal being provided from a pixel array included in the image sensor. The TCBL unit is connected to the sampling unit, and is configured to remove noise from the output signal based on a timing control signal. The timing control signal is activated during a first comparison duration, in which a first comparison operation is performed with respect to the ramp signal and the reset component of the input signal, and during a second comparison duration, in which a second comparison operation is performed with respect to the ramp signal and the image component of the input signal. | 10-17-2013 |
20130270421 | POLARIZATION IMAGE SENSOR AND ENDOSCOPE - A polarization image sensor includes: photodiodes arranged on an image capturing plane; a color mosaic filter in which color filters in multiple different colors are arranged to face the photodiodes; an optical low-pass filter which covers the color mosaic filter; and polarization optical elements located closer to a light source than the optical low-pass filter is. Each polarization optical element covers an associated one of the photodiodes and makes light which is polarized in a predetermined direction in a plane that is parallel to the image capturing plane incident onto the optical low-pass filter. The color filters are arranged so that light that has passed through polarization optical elements is transmitted through an associated one of the color filters in a single color. Each color filter covers multiple photodiodes. | 10-17-2013 |
20130277533 | DIGITAL CAMERA WITH MULTIPLE PIPELINE SIGNAL PROCESSORS - A method includes sampling a first intensity of light with a first array of photo detectors of a digital camera. A second intensity of light is sampled with a second array of photo detectors of the digital camera. A first channel processor coupled to the first array of photo detectors generates a first image using first array data which is representative of the first intensity of light sampled by the first array of photo detectors. A second channel processor coupled to the second array of photo detectors generates a second image using second array data which is representative of the second intensity of light sampled by the second array of photo detectors. The first array of photo detectors, the second array of photo detectors, the first channel processor, and the second channel processor are integrated on or in a semiconductor substrate. | 10-24-2013 |
20130277534 | SOLID-STATE IMAGE SENSOR, METHOD OF MANUFACTURING THE SAME, AND CAMERA - A solid-state image sensor comprises a first substrate and a second substrate combined with each other, the first substrate comprising a photoelectric conversion portion, a holding portion which holds a charge generated in the photoelectric conversion portion, a transfer portion which transfers the charge generated in the photoelectric conversion portion to the holding portion, and a first electrode connected to the holding portion, and the second substrate comprising a second electrode and an amplifier portion which is connected to the second electrode and amplifies a signal in the holding portion, wherein the holding portion and the amplifier portion are electrically connected to each other by a capacitance formed by the first electrode and the second electrode. | 10-24-2013 |
20130277535 | SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including a plurality of unit pixels arranged thereon, the plurality of unit pixels each including a light receiving section which stores a charge generated by photoelectric conversion, a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and a signal output section to which a gate electrode of the MOS capacitor is connected. | 10-24-2013 |
20130277536 | IMAGE-CAPTURING APPARATUS - An image-capturing apparatus including a solid-state imaging device including unit-cells arranged in a matrix, in which each of the unit-cells includes a photoelectric conversion unit including: a photoelectric conversion film formed above a semiconductor substrate; a pixel electrode formed on a surface of the photoelectric conversion film, the surface facing the semiconductor substrate; and a transparent electrode formed on a surface of the photoelectric conversion film, the surface being opposite the surface on which the pixel electrode is formed, and the image-capturing apparatus further includes: a voltage applying unit which applies, between the pixel electrode and the transparent electrode, a variable sensitivity voltage for controlling sensitivity of the solid-state imaging device; a level detecting unit which detects an output level of image-captured image data from the solid-state imaging device; and a controlling unit which varies the variable sensitivity voltage based on the output level detected by the level detecting unit. | 10-24-2013 |
20130277537 | IMAGE SENSOR WITH A GATED STORAGE NODE LINKED TO TRANSFER GATE - A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel. | 10-24-2013 |
20130277538 | VERTICAL WAVEGUIDES WITH VARIOUS FUNCTIONALITY ON INTEGRATED CIRCUITS - An embodiment relates to a device comprising an optical pipe comprising a core and a cladding, the optical pipe being configured to separate wavelengths of an electromagnetic radiation beam incident on the optical pipe at a selective wavelength through the core and the cladding, wherein the core is configured to be both a channel to transmit the wavelengths up to the selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the core. Other embodiments relate to a compound light detector. | 10-24-2013 |
20130277539 | Pixel Design With Temporal Analysis Capabilities For Scene Interpretation - Disclosed is a sensor device with pixels that in addition to sensing an image, performs captured image or scene analysis. The device saves further image processing downstream, is characterized by minimal charge movements and reduces a large fraction (about 90%) of the consumed electric energy as compared to the existing devices. | 10-24-2013 |
20130284885 | Method and Apparatus for Image Sensor Packaging - Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a sensor device with an application specific integrated circuit (ASIC) are disclosed. According to an embodiment, a sensor device may be bonded together face-to-face with an ASIC without using a carrier wafer, where corresponding bond pads of the sensor are aligned with bond pads of the ASIC and bonded together, in a one-to-one fashion. A column of pixels of the sensor may share a bond bad connected by a shared inter-metal line. The bond pads may be of different sizes and configured in different rows to be disjoint from each other. Additional dummy pads may be added to increase the bonding between the sensor and the ASIC. | 10-31-2013 |
20130284886 | RADIATION SHIELDED REFLECTIVE OPTICAL SYSTEM - A radiation shielded optical system. In one example, a radiation shielded optical system includes a labyrinthine housing having an entrance and defining a cavity, a detector positioned within the cavity of the housing, the housing configured to provide substantially 4-pi steradian radiation shielding for the detector. The optical system further includes a rear-stopped optical sub-system having a rear aperture stop positioned proximate the entrance of the housing and configured to direct an optical beam through the rear aperture stop and the entrance into the housing, and a fold mirror positioned within the housing and configured to reflect the optical beam onto the detector. | 10-31-2013 |
20130284887 | OSCILLATOR, OSCILLATING METHOD, IMAGE SENSOR, AND IMAGING APPARATUS - An oscillator includes: inverters that are connected in a loop shape and of which the number is an odd number greater than or equal to three; and a delay section that delays change in a voltage which is input to one inverter of the odd number of inverters. The one inverter is a schmitt trigger inverter. The schmitt trigger inverter includes a current source, and a resistor in which current supplied by the current source flows. A hysteresis width of the schmitt trigger inverter depends on the current which flows in the resistor. | 10-31-2013 |
20130284888 | SOLID-STATE IMAGING APPARATUS - There is a need to provide a solid-state imaging apparatus capable of highly accurately analog-to-digital converting an analog voltage output from a pixel circuit. The solid-state imaging apparatus supplies a counter code to an integral A/D converter. The counter code CD includes 3-phase clock signals and gray signals. The clock signals each have a cycle equal to specified cycle multiplied by 8 and allow phases to shift from each other by specified cycle. The gray signals linearly increase count values at a cycle equal to specified cycle multiplied by 4. The counter code reverses only the logical level of a signal when a count value changes. A count value error can be limited to a minimum. | 10-31-2013 |
20130284889 | MONOLITHIC MULTISPECTRAL VISIBLE AND INFRARED IMAGER - The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode. | 10-31-2013 |
20130284890 | METHOD AND APPARATUS PROVIDING PIXEL ARRAY HAVING AUTOMATIC LIGHT CONTROL PIXELS AND IMAGE CAPTURE PIXELS - A pixel array uses two sets of pixels to provide accurate exposure control. One set of pixels provide continuous output signals for automatic light control (ALC) as the other set integrates and captures an image. ALC pixels allow monitoring of multiple pixels of an array to obtain sample data indicating the amount of light reaching the array, while allowing the other pixels to provide proper image data. A small percentage of the pixels in an array is replaced with ALC pixels and the array has two reset lines for each row; one line controls the reset for the image capture pixels while the other line controls the reset for the ALC pixels. In the columns, at least one extra control signal is used for the sampling of the reset level for the ALC pixels, which happens later than the sampling of the reset level for the image capture pixels. | 10-31-2013 |
20130284891 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF - An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal. | 10-31-2013 |
20130284892 | SOLID-STATE IMAGING DEVICE - A vertical shift register section includes M logic circuits for outputting row selection control signals respectively to M row selection wiring lines and shift register circuits disposed for every two row selection wiring lines. The M logic circuits, when a binning control signal Vbin | 10-31-2013 |
20130284893 | SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE DRIVING METHOD - A controlling section, by bringing readout switches of pixels of a certain row out of the M rows into a connected state, causes charges generated in the row to be input to integration circuits, causes first holding circuits to hold voltage values output from the integration circuits, and then brings transfer switches into a connected state to transfer the voltage values to the second holding circuits, and thereafter performs in parallel an operation for causing the voltage values to be sequentially output from the second holding circuits and an operation for, by bringing readout switches of pixels of another row into a connected state, causing charges generated in the row to be input to the integration circuits. Accordingly, a solid-state imaging device and a driving method thereof capable of suppressing variations in output characteristics, while solving the problem due to a delay effect are realized. | 10-31-2013 |
20130292547 | LIGHT GUIDE ARRAY FOR AN IMAGE SENSOR - An image sensor pixel that includes a photoelectric conversion unit supported by a substrate and an insulator adjacent to the substrate. The pixel includes a cascaded light guide located within an opening of the insulator. The cascaded light guide may include a color filter having an air gap between adjacent color filters that is sealed from above by a transparent sealing film having a concave surface over the air gap to diverge light crossing into the air gap from the concave surface into adjacent color filters. A portion of a support wall between a pair of color filters may have a larger width above than below to form a necking to hold down the color filters for better retention. | 11-07-2013 |
20130292548 | IMAGE SENSORS WITH PHOTOELECTRIC FILMS - An image sensor with an organic photoelectric film for converting light into charge may be provided. The image sensor may include an array of image sensor pixels. Each image sensor pixel may include a charge-integrating pinned diode that collects photo-generated charge from the photoelectric film during an integration period. An anode electrode may be coupled to an n+ doped charge injection region in the charge-integrating pinned diode and may be used to convey the photo-generated charge from the photoelectric film to the charge-integrating pinned diode. Upon completion of a charge integration cycle, a first transfer transistor gate may be pulsed to move the charge from the charge-integrating pinned diode to a charge-storage pinned diode. The charge may be transferred from the charge-storage pinned diode to a floating diffusion node for readout by pulsing a gate of a second charge transfer transistor. | 11-07-2013 |
20130292549 | SOLID IMAGING DEVICE - A solid-state imaging device includes a photodetecting section including pixels each including a transistor and a photodiode, readout wiring lines connected to the transistors, a signal output section for sequentially outputting voltage values according to the amounts of charges input through the respective readout wiring lines, potential change switches for switching the potentials of the readout wiring lines to a potential Vdr different from input potentials of integration circuits of the signal output section, and a controlling section. The controlling section switches potentials of the readout wiring lines to the different potential Vdr for a predetermined period included in a period, after an elapse of a readout period where voltage values corresponding to the amounts of charges generated in the pixels are sequentially output from the signal output section, until a next readout period is started. | 11-07-2013 |
20130299674 | Digital Pixel Sensor with Reduced Noise - An apparatus and method for forming a digital image are disclosed. The apparatus includes a plurality of pixel sensors and a controller. Each sensor includes a photodiode, a floating diffusion node that can be selectively connected to said photodiode or a reset voltage, and an analog-to-digital converter (ADC) connected to the floating diffusion node, the ADC converting a voltage on the floating diffusion node to a digital value. Each pixel sensor also includes an output circuit that connects the ADC to a bus. The apparatus also includes a controller that causes the ADCs to operate in parallel to convert the voltages on the floating diffusion nodes to the digital values in a time that is less than the time needed for the floating diffusion node to acquire ten electron equivalents of noise. The optional apparatus includes circuitry that allows correlated double sampling to be performed in each sensor. | 11-14-2013 |
20130299675 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS - Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device | 11-14-2013 |
20130299676 | A/D CONVERSION CIRCUIT AND SOLID-STATE IMAGING DEVICE - An A/D conversion circuit and a solid-state imaging device are able to reduce current consumption, and two input terminals of a NAND element included in a latch circuit receive a corresponding one of a plurality of clock signals and an enable signal. The enable signal is not input to the NAND element before an end timing of A/D conversion, and is input to the NAND element at the end timing of the A/D conversion and at a timing at which latching is performed. The latch circuit latches no clock signal when the enable signal is not input. | 11-14-2013 |
20130299677 | IMAGE TAKING DEVICE AND CAMERA SYSTEM - An image sensor includes a plurality of pixels, a plurality of sense circuits, and a count circuit. Each sense circuit is configured to read out electrical signals from at least one pixel associated with the sense circuit in order to generate data representing whether or not photons have been received by the sense circuit. The count circuit is in communication with a sense circuit selected from the plurality of sense circuits. The count circuit is configured to provide integration results for the pixels associated with the sense circuits based on the data received from the sense circuits. | 11-14-2013 |
20130299678 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - An imaging apparatus has an imaging area formed by arranging a plurality of imaging blocks each including a pixel array, a plurality of vertical signal lines, a horizontal output line commonly provided for the plurality of vertical signal lines to read out signals read out to the plurality of vertical signal lines, a first scanning circuit, and a second scanning circuit, wherein signals of the pixels of a selected row in the pixel array are read out to the plurality of vertical signal lines in accordance with a driving pulse from the first scanning circuit, the signals read out to the plurality of vertical signal lines are sequentially read out to the horizontal output line in accordance with a driving pulse from the second scanning circuit, and a length in a row direction of the pixel array is smaller than a length in a column direction of the pixel array. | 11-14-2013 |
20130299679 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF DRIVING SOLID-STATE IMAGE PICKUP DEVICE - A controlling section causes a charge of a photodiode to be output to an integration circuit by bringing a readout switch into a connected state, and then brings the readout switch into a non-connected state. Thereafter, a voltage value is output to a holding circuit from the integration circuit. After carrying out the output operation mentioned above, an operation for causing a charge held in an integrating capacitive element to be discharged, and bringing the readout switch into a connected state to cause a charge held in the photodiode to be discharged and an operation for causing voltage values held in the holding circuits to be sequentially output are carried out in parallel. Accordingly, a solid-state imaging device and a method of driving it capable of solving the problems due to a memory effect, a delay effect, and switching noise are realized. | 11-14-2013 |
20130306840 | Device, Method and System for Detecting Nuclear Radiation Levels - A mobile electronic device for detecting nuclear radiation levels, where the device has image capturing means comprising a sensor capable of receiving nuclear radiation and converting same to a value indicative of the nuclear radiation level. The device also comprises a shutter translatable from a first orientation covering the sensor (in which radiation level monitoring is allowed) to a second orientation revealing the sensor (in which radiation level monitoring is disallowed). The device may be a modified cellular telephone, satellite telephone, personal digital assistant or tablet personal computer provided with a digital camera, such that camera functionality is maintained and permitted when the shutter is in the second orientation. | 11-21-2013 |
20130306841 | SOLID-STATE IMAGE DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC SYSTEM - A solid-state imaging device includes: a pixel array section in which a plurality of pixels including an amplification transistor configured to amplify a signal based on a photoelectric charge in accordance with an amount of received light are disposed; through vertical signal lines of the pixel array section, a bias-current control section configured to turn on or off a bias current supplied to the amplification transistor for each of the vertical signal lines; and a drive control section configured to control the bias-current control section so as to turn on the bias current of the vertical signal line through which a pixel signal is read, and to turn off the bias current of the vertical signal line through which a pixel signal is not read. | 11-21-2013 |
20130306842 | TABLE INSTALLING DEVICE - A table installing device includes a fixing member fixed to a projector; a first holding member that holds the projector by holding the fixing member, and is installed so as to stand up with respect to a top plate upper surface of the table; a second holding member that is joined to the first holding member and is installed on the top plate upper surface; and a clamp portion that is joined to the second holding member, and interposes the top plate between the second holding member and the clamp portion. | 11-21-2013 |
20130306843 | MEMORY-ENHANCED IMAGE SENSOR - An image sensor IC may have a non-volatile memory for several functions. The functions may include storing control parameters for a camera autofocus module, part tracking data, and data for defect correction or color science. The non-volatile memory can in particular be an antifuse non-volatile memory, which may not need special light shielding. | 11-21-2013 |
20130313408 | SPATIALLY RESOLVED SPECTRAL-IMAGING DEVICE - A spatially resolved spectral device comprising a dispersive array to receive an incident light comprising a principal ray. The dispersive array comprising a plurality of dichroic layers, each of the plurality of dichroic layers disposed in a path of a direction of the principal ray. Each of the plurality of dichroic layers configured to at least one of reflect or transmit a different wavelength range of the incident light. The device further comprising a detection array operatively coupled with the dispersive array. The detection array comprising a photosensitive component including a plurality of detection pixels, each of the plurality of detection pixels having a light-receiving surface disposed parallel to the direction of the principal ray to detect a respective one of the different wavelength ranges of incident light reflected from a corresponding one of the plurality of dichroic layers. | 11-28-2013 |
20130313409 | METHOD AND APPARATUS PROVIDING PIXEL STORAGE GATE CHARGE SENSING FOR ELECTRONIC STABILIZATION IN IMAGERS - An imaging device that stores charge from a photosensor under at least one storage gate. A driver used to operate the at least one storage gate, senses how much charge was transferred to the storage gate. The sensed charge is used to obtain at least one signature of the image scene. The at least one signature may then be used for processing such as e.g., motion detection, auto-exposure, and auto-white balancing. | 11-28-2013 |
20130313410 | SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING SOLID-STATE IMAGING ELEMENT, AND IMAGING DEVICE - A solid-state imaging element | 11-28-2013 |
20130313411 | SOLID-STATE IMAGING ELEMENT AND CAMERA SYSTEM - Disclosed herein is a solid-state imaging element including a pixel unit configured to include a plurality of pixels arranged in a matrix and a pixel signal readout unit configured to include an analog-digital conversion unit that carries out analog-digital conversion of a pixel signal read out from the pixel unit. Each one of the pixels in the pixel unit includes a plurality of divided pixels arising from division into regions different from each other in optical sensitivity or a charge accumulation amount. The pixel signal readout unit reads out divided-pixel signals of the divided pixels in the pixel. The analog-digital conversion unit carries out analog-digital conversion of the divided-pixel signals that are read out and adds the divided-pixel signals to each other to obtain a pixel signal of one pixel. | 11-28-2013 |
20130320193 | SYSTEM AND METHOD FOR CONTROLLING VEHICLE EQUIPMENT RESPONSIVE TO A MULTI-STAGE VILLAGE DETECTION - A system for controlling equipment of a vehicle is provided. The system is configured to image a scene external and forward of the controlled vehicle and to generate image data corresponding to acquired images, including a controller for receiving and analyzing the image data and for generating a control signal in response to analysis of the image data and in response to a selected mode of operation. The controller analyzes the data in order to detect at least one characteristic in the image data and selects a mode of operation from at least one of the following modes of operation: The controller selects a dark village mode if at least one characteristic reaches a first threshold, a bright village mode if at least one characteristic reaches a second threshold, and a non-village mode if the controller is not operating in either the dark village mode or the bright village mode. | 12-05-2013 |
20130320194 | Image Sensors with a High Fill-Factor - A device includes a first chip including an image sensor therein, and a second chip bonded to the first chip. The second chip includes a logic device selected from the group consisting essentially of a reset transistor, a selector, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. | 12-05-2013 |
20130320195 | LENS ARRAY FOR PARTITIONED IMAGE SENSOR - An apparatus includes an image sensor having N image sensor regions arranged thereon. A lens array having a including N lens structures is disposed proximate to the image sensor. Each one of the N lens structures is arranged to focus a single image onto a respective one of the N image sensor regions. The N lens structures include a first lens structure having a first focal length and positioned the first focal length away from the respective one of the N image sensor regions. A second lens structure having a second focal length is positioned the second focal length away from the respective one of the N image sensor regions. A third lens structure having a third focal length is positioned the third focal length away from the respective one of the N image sensor regions. The first, second and third focal lengths are different. | 12-05-2013 |
20130320196 | COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) IMAGE SENSOR - An image sensor includes a photodiode configured to convert a received optical signal into photo charges and to output the photo charges, a sensing node adjacent to the photodiode and configured to sense the photo charges, the sensing node including a first dopant region having dopants of a first conductivity type, and a second dopant region having dopants of a second conductivity type, the second dopant region surrounding the first dopant region, and a driver configured to convert the sensed photo charges into an electrical signal and to output the electrical signal. | 12-05-2013 |
20130320197 | SEMICONDUCTOR DEVICE AND SENSING SYSTEM - A semiconductor device includes a first substrate that has a sensing portion that detects predetermined information, a second substrate that has a first processing portion that processes data supplied thereto from the sensing portion, and a third substrate having a second processing portion that processes data supplied thereto either from the first substrate or from the second substrate. | 12-05-2013 |
20130327921 | IMAGE DEVICE AND METHODS OF FORMING THE SAME - A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D | 12-12-2013 |
20130327922 | IMAGE SENSOR WITH PIXEL-LEVEL AUTO LIGHT ATTENUATOR - An image sensing device for sensing pixel data of a plurality of pixels in an image includes a substrate; a plurality of light sensing units, each of the plurality of light sensing units being formed in the substrate and corresponding to one of the plurality of pixels; and a plurality of pixel-level auto-light attenuators, each of the plurality of pixel-level light attenuators corresponding to one of the plurality of light sensing units. Each pixel-level light attenuator includes a transparent dielectric layer, formed on the corresponding light sensing unit; and an electronic-chromic layer, formed on the transparent dielectric layer. | 12-12-2013 |
20130327923 | HIGH DYNAMIC RANGE IMAGE SENSOR WITH IN PIXEL MEMORY - A high dynamic range CMOS image sensor is disclosed. The pixels of the image sensor incorporate in-pixel memory. Further, the pixels may have varying integration periods. The integration periods are determined, in part, by the signal stored in the in-pixel memory from previous integration periods. | 12-12-2013 |
20130327924 | SOLID-STATE IMAGE SENSOR, CONTROL METHOD FOR THE SAME, AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including unit pixels each including a photoelectric transducer which generates a charge corresponding to an amount of incident light and accumulates the charge therein, a first transfer gate which transfers the charge accumulated in the photoelectric transducer, a charge holding region in which the charge transferred from the photoelectric transducer by the first transfer gate is held, a second transfer gate which transfers the charge held in the charge holding region, a floating diffusion region in which the charge transferred from the charge holding region by the second transfer gate is held to be read out as a signal, and a reset section which resets the charge in the floating diffusion region. The first transfer gate and the reset section are connected to an identical drive section through a drive line shared thereby, and are simultaneously driven by the drive section. | 12-12-2013 |
20130327925 | IMAGE PICKUP DEVICE - An image pickup device may include: an image capturing unit; a reference signal generation unit; a comparison unit that compares analog signals to the reference signal and ends the comparison process at a timing at which the reference signal satisfies a predetermined condition with respect to the analog signals; a clock generation unit; a latch unit that retains the low-order phase signal as a latch signal at a timing related to the end of the comparison process; a count unit that counts a signal related to one of the low-order phase signals and generates a high-order digital signal; a detection unit that generates a low-order digital signal by sequentially comparing logic states of a plurality of bits of the latch signal retained by the corresponding latch unit and encoding the latch signal; and an arithmetic unit that performs an arithmetic process. | 12-12-2013 |
20130327926 | FPA MODULE FOR OBTAINING 3-DIMENSIONAL IMAGE - Provided is an FPA module capable of further improving a quality of an obtained 3-dimensional image by adjusting an interval of an arrangement of optical detectors and a size of the optical detector within an FPA module for obtaining the 3-dimensional image. An FPA module for obtaining a 3-dimensional image according to an exemplary embodiment of the present disclosure includes a plurality of light detectors configured to detect light reflected from a monitoring target, in which the plurality of light detectors is disposed at different intervals according to positions. | 12-12-2013 |
20130327927 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a light sensing portion which is formed on a substrate and generates a signal electric charge according to incident light; a rectangular or gradient-index on-chip micro lens formed on a light incident side above the light sensing portion; and a planarized lens layer which covers the on-chip micro lens and is formed in such a manner that a light incident surface is planarized. | 12-12-2013 |
20130334399 | CMOS CIRCUIT FOR SENSOR WITH REDUCED READ NOISE - A CMOS image sensor having one or more pixels, e.g. in an array, whereby each of the pixels having two or more sub-pixel elements for generating charge according to incident light intensity as well as a common charge sensitive device such as an amplifier coupled to two or more sub-pixel elements of a respective pixel. Charges generated by the two or more sub-pixel elements are added and integrated over respective integration time periods, to provide a signal representing the integrated charges. The circuit can be configured so that the two or more sub-pixel elements have different integration time periods. By combining charges at the charge sensitive device rather than combining outputs of multiple such devices, the amount of read noise can be reduced. | 12-19-2013 |
20130334400 | METHOD OF MAKING LENS MODULES AND THE LENS MODULE - A method of making lens modules includes the following steps: Put a plurality of lens members between a first die and a second die, wherein the first die touches the substrate of each lens module, and the second die touches the lens of each lens module. Provide a housing material between the first die and the second die, and then solidify the housing material. Remove the first die and the second die to obtain a block; and Cut the block to obtain a plurality of lens modules. | 12-19-2013 |
20130334401 | Method for Reading Out Multiple SRAM Blocks With Different Column Sizing In Stitched CMOS Image Senor - A stitched image sensor array on a semiconductor substrate with identical blocks that have wherein said first configuration includes enable inputs, which vary a function of the block depending on the connection to the enable inputs. The enable inputs can set an SRAM to receive different numbers of inputs. | 12-19-2013 |
20130334402 | SOLID-STATE IMAGINGELEMENT, CALIBRATION METHOD OF SOLID-STATE IMAGINGELEMENT, SHUTTER DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state imaging element including: a plurality of pixels including a photoelectric conversion section; and a nano-carbon laminated film disposed on a side of a light receiving surface of the photoelectric conversion section and formed with a plurality of nano-carbon layers, transmittance of light and a wavelength region of transmissible light changing in the nano-carbon laminated film according to a voltage applied to the nano-carbon laminated film. | 12-19-2013 |
20130334403 | IMAGE SENSOR WITH HYBRID HETEROSTRUCTURE - An image sensor architecture for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer includes the photodiode and amplifier circuitry for each pixel. A bottom includes the pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a process optimized for forming low-noise pixels, the pixel performance can be greatly improved. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a process which has been optimized for circuit speed and manufacturing cost. By combining the two layers into a stacked structure, the top layer (and any intermediate layer(s)) acts to optically shield the lower layer, thereby allowing charge to be stored and shielded without the need for a mechanical shutter. | 12-19-2013 |
20130341488 | IMAGING ELEMENT AND IMAGING APPARATUS - An imaging element includes a pixel array which has a plurality of pixels arranged in a two-dimensional matrix, and a plurality of signal output terminals which are provided to correspond to the pixel columns of the pixel array and output the signals of the pixels in the pixel columns. In the plurality of signal output terminals, each predetermined number of signal output terminals is arranged as a set in the column direction of the pixel array. The sets of the predetermined number of signal output terminals are arranged in the row direction of the pixel array. | 12-26-2013 |
20130341489 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device including an AD converter and a pixel array is provided. The AD converter performs a ramp comparison and a successive-approximation. The AD converter determines a digital value by performing one of the ramp comparison and the successive-approximation as a former comparison operation and then performing the other as a latter comparison operation in the range narrowed down by the former comparison operation. The pixel array supplies, to the AD converter, a reference signal corresponding to a reset level of the pixel, and an image signal having image information. The AD converter performs the latter comparison operation without performing the former comparison operation, when the reference signal is supplied. | 12-26-2013 |
20130341490 | Pinned Charge Transimpedance Amplifier - A system that has plural different photodetector circuits, each photodetector circuit including its own transfer gate, and each of the plural different photodetector circuits and transfer gates commonly connected to a first node. In amplifier is used which maintains a fixed voltage edits input. The amplifier Has a first capacitance to ground in a second capacitance as a feedback between its output and input. In one embodiment, there are 16 photodetector circuits connected to the single amplifier. In embodiments, the photodetector circuits can be located in one substrate while the amplifier is located in another substrate, and the amplifier also minimizes parasitics between the substrates. | 12-26-2013 |
20130341491 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a substrate; a plurality of first electrodes arranged in a matrix above the substrate, and electrically isolated from each other; an insulator layer covering the first electrodes, having a planarized upper surface, and comprising an insulator; a photoelectric conversion film which is formed above the insulator layer, and converts light into signal charges; a second electrode formed above the photoelectric conversion film; and a signal readout circuit which is formed on the substrate, and generates a readout signal by detecting an amount of current change or voltage change caused by the signal charges at each of the first electrodes, in which the insulator layer allows conduction of at least electrons or holes by quantum mechanical tunneling. | 12-26-2013 |
20130341492 | PROTECTIVE DEVICE FOR AN IMAGER - A protective device for an imager which is contained within a housing and in which the imager is aligned with an opening in the housing. The protective device includes a cover which overlies the housing opening and is manually detachably secured to the housing by three or more resilient clips. A plurality of openings are formed through the cover to enable operation of the imager. | 12-26-2013 |
20130341493 | IMAGING DEVICE AND IMAGING SYSTEM - An imaging apparatus according to one embodiment of the present invention includes: a lens optical system having first to third regions, the first region transmitting light of a first wavelength band, the second region transmitting light of the first wavelength band and having optical characteristics for providing a different focusing characteristic from a focusing characteristic associated with rays transmitted through the first region, and the third region transmitting light of a second wavelength band; an imaging device on which light having passed through the lens optical system is incident, the imaging device having a plurality of first to third pixels; and a microlens array causing light having passed through the first region to enter the plurality of first pixels, light having passed through the second region to enter the plurality of second pixels, and light having passed through the third region to enter the plurality of third pixels. | 12-26-2013 |
20140001337 | SYSTEMS AND METHODS FOR PROCESSING AND IMAGING OF BIOLOGICAL SAMPLES | 01-02-2014 |
20140001338 | SOLID-STATE IMAGING DEVICE AND DRIVE CONTROL METHOD FOR THE SAME | 01-02-2014 |
20140001339 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME | 01-02-2014 |
20140001340 | IMAGING APPARATUS, IMAGING SYSTEM, METHOD OF CONTROLLING THE APPARATUS AND THE SYSTEM, AND PROGRAM | 01-02-2014 |
20140008515 | HYBRID ANALOG-TO-DIGITAL CONVERTER HAVING MULTIPLE ADC MODES - A hybrid ADC having a successive approximation register (SAR) ADC mode for generating a bit of a digital signal and a ramp ADC mode for generating an additional bit of the digital signal is disclosed. When in the SAR ADC mode, a control circuit is configured to disable a ramp signal generator; disable a counter; and enable a register to control an offset stage to set the magnitude of an offset voltage that is provided to an input of a comparator of the ADC. When in the ramp ADC mode, the control circuit is configured to enable the ramp signal generator to provide a ramp signal to the input of the comparator; enable the counter to begin providing the digital count in response to the output of the comparator; and disable the register so that the offset stage is not providing the offset voltage. | 01-09-2014 |
20140008516 | OPTICAL TOUCH DEVICE AND FOLDABLE FRAME ASSEMBLY THEREOF - A foldable frame assembly is adapted for an optical touch device. The foldable frame assembly includes a first frame, a second frame and a third frame. The second frame is pivotally connected to a first end of the first frame and the third frame is pivotally connected to a second end of the first frame, wherein the first end is opposite to the second end. The second frame and the third frame can rotate with respect to the first frame so as to be folded or expanded with respect to the first frame. | 01-09-2014 |
20140008517 | SINGLE-ELECTRON DETECTION METHOD AND APPARATUS FOR SOLID-STATE INTENSITY IMAGE SENSORS - Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels. | 01-09-2014 |
20140008518 | IMAGE SENSOR CIRCUIT - The controlling circuit of the image censor circuit controls the row decoder to address the light receiving cell with the address signal to turn on the first MOS transistor and turns on the switch circuit with a switch controlling signal, and then controls the row decoder to turn off the first MOS transistor and then turns off the switch circuit with the switch controlling signal. | 01-09-2014 |
20140008519 | METHOD FOR CONTROLLING RADIATION IMAGE PICKUP APPARATUS, RADIATION IMAGE PICKUP APPARATUS, AND RADIATION IMAGE PICKUP SYSTEM - A radiation image pickup apparatus capable of setting an optimum threshold value used for instantaneously and highly accurately detecting the presence/absence of irradiation includes a pixel array having a plurality of pixels arranged in a matrix, where each of the pixels includes a conversion element and a switch element, a drive circuit for supplying a drive signal for controlling the switch element between a conducting state and a non-conducting state, a detection unit for outputting a detection signal varying with the intensity of irradiation of the pixel array, and an arithmetic unit for calculating an end threshold value used to detect end of irradiation on the basis of the signal output from the detection unit during a period of time during which irradiation is applied to the pixel array in which the switch elements of the pixels are set in a non-conducting state by the drive circuit. | 01-09-2014 |
20140014813 | INTEGRATED CIRCUIT STACK WITH INTEGRATED ELECTROMAGNETIC INTERFERENCE SHIELDING - An integrated circuit system includes a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide. A frontside of the first device wafer is bonded to a frontside of the second device wafer at a bonding interface. A conductive path couples the first conductor to the second conductor through the bonding interface. A first metal EMI shield is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface. | 01-16-2014 |
20140014814 | CIRCUITRY AND METHOD FOR COLLECTING IMAGE ARRAY DATA WITH SEPARATE ADDRESSING AND DYNAMIC CLAMPING OF PIXELS TO ALLOW FOR FASTER PIXEL DATA READOUT AND FULL REMOVAL OF PIXEL CHARGES - Circuitry and method for collecting image array data in which pixels are addressed and dynamically clamped separately. In accordance with one embodiment, pixels are addressed and clamped during different time intervals, thereby allowing faster pixel data readout while still allowing sufficient time to remove all pixel charges. | 01-16-2014 |
20140014815 | RAMP SIGNAL GENERATOR FOR CMOS IMAGE SENSOR - A ramp signal generator includes: a row decoder which receives a row control signal from a timing controller and generates one or more row select signals, a first column decoder which receives a first column control signal from the timing controller and generates one or more first column select signals, a second column decoder which receives a second column control signal from the timing controller and generates one or more second column select signals, and a current cell array which is activated by the one or more first column select signals, the one or more second column select signals, and the one or more row select signals, and includes at least one current cell which generates at least one unit current, and generates an output current by summing the generated at least one unit current. | 01-16-2014 |
20140014816 | IMAGING ELEMENT AND IMAGING METHOD - There is provided an imaging element including a contact portion that connects first and second regions accumulating a charge to each other, a first transfer portion that is formed between the first region and the contact portion, and a second transfer portion that is formed between the second region and the contact portion. | 01-16-2014 |
20140014817 | IMAGE SENSOR - An image sensor comprises a pixel portion formed by arraying pixels including photoelectric conversion portions in a matrix, a plurality of A/D converters which are provided in a one-to-one correspondence to pixel columns of the pixel portion, an adding unit which adds pixel signals from a plurality of pixel columns to each other, and a connecting portion capable of inputting, to an arbitrary A/D converter, a sum signal obtained by adding the pixel signals by the adding unit. | 01-16-2014 |
20140014818 | PIXEL ARRAY, IMAGE SENSOR INCLUDING THE SAME, AND METHOD OF COMPENSATING FOR LOCAL DARK CURRENT - A pixel array for an image sensor is provided. The pixel array includes a dark pixel which is configured to detect a local dark current in an active pixel block. The dark pixel is distinguished from an optical black pixel block which is arranged around the active pixel block and is configured to detect a global dark current. The pixel array is configured to compensate for dark shading, which is not compensated through global dark current compensation, using the local dark current output from the dark pixel which is arranged within the active pixel block. | 01-16-2014 |
20140014819 | ILLUMINATION APPARATUS, IMAGE SENSOR UNIT, IMAGE READING APPARATUS, AND IMAGE FORMING APPARATUS - An illumination apparatus includes: a light guide that is formed in a rod shape and includes a positioning portion that is formed at one end in a longitudinal direction, and light incident surfaces that are formed at two end faces in the longitudinal direction; and light sources that are arranged in the vicinity of the light incident surfaces, respectively, and that emit light that is incident on the incident surfaces. The light guide is formed by injection molding. A gate portion for supplying a resin material during injection molding opens at a position that corresponds to a tip face of the positioning portion. | 01-16-2014 |
20140014820 | IMAGE PICKUP SYSTEM AND IMAGE PICKUP METHOD - An image pickup system that performs image pickup control of a rolling shutter type such that an all line exposure period and a non-all line exposure period are generated and controls a light source of illumination light to increase or decrease, in a first light adjustment mode, while maintaining a light amount of the illumination light in a first period during the all line exposure period at a predetermined level, a light amount of the illumination light during a second period including the all line exposure period other than the first period and the non-all line exposure period compared with an immediately preceding second period. | 01-16-2014 |
20140014821 | A/D CONVERTER, IMAGE SENSOR DEVICE, AND METHOD OF GENERATING DIGITAL SIGNAL FROM ANALOG SIGNAL - According to this A/D converter, a first A/D conversion operation for performing integral A/D conversion and a second A/D conversion operation for performing cyclic A/D conversion are realized based on control of operational procedures in a same circuit configuration. Moreover, in the first A/D conversion operation, since a capacity of a capacitor used in the integration of an output signal is greater than a capacity of a capacitor used for storing an input analog signal and a standard reference voltage, the analog signal that is input in the integral A/D conversion is attenuated according to the capacity ratio and subject to sampling and integration. Consequently, the voltage range of the analog signal that is output in the integral A/D conversion also decreases according to the capacity ratio of the capacitors, and the A/D converter can be therefore constructed with a single-ended configuration. | 01-16-2014 |
20140014822 | SOLID-STATE IMAGE PICKUP DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state image pickup device including a plurality of pixels and a scanning unit. Each pixel includes a photoelectric conversion element and a charge accumulation region. The scanning unit is configured to read a first signal from a charge accumulation region. The scanning unit is configured to read a second signal from the charge accumulation region. The first signal corresponds to an accumulation of signal charges during a first period, while the second signal corresponds to another accumulation of signal charges during a second period. | 01-16-2014 |
20140014823 | SOLID-STATE IMAGING APPARATUS WITH PLURAL READOUT MODES, AND ELECTRONIC EQUIPMENT - A solid-state imaging apparatus includes: a pixel array section in which pixels including photoelectric conversion elements are two-dimensionally arranged in a matrix form, and a plurality of systematic pixel drive lines to transmit drive signals to read out signals from the pixels are arranged for each pixel row; and a row scanning section to simultaneously output the drive signals through the plurality of systematic pixel drive lines to a plurality of pixel rows for different pixel columns. | 01-16-2014 |
20140021332 | WAFER-LEVEL OPTICS MODULE AND A METHOD OF ASSEMBLING THE SAME - A wafer-level optics (WLO) module includes a sensor configured to convert an optical image into an electronic signal; at least one wafer-level lens; and a bracket that provides a space set on a first surface of the bracket for accommodating the sensor, and provides a second surface that is opposite to the first surface for bonding with the wafer-level lens. | 01-23-2014 |
20140021333 | IMAGE SENSING APPARATUS - An image sensing apparatus including an image sensor and a light transmission module is provided. The image sensor has an active surface including a first sensing area and a second sensing area. The light transmission module is disposed over the active surface, and has a first light transmission area and a second light transmission area. A first light is allowed to penetrate through the first light transmission area and received by the first sensing area. A second light is reflected by the second light transmission area and received by the second sensing area. | 01-23-2014 |
20140027611 | OPTICAL BLACK PIXEL READOUT FOR IMAGE SENSOR DATA CORRECTION - Providing for analog averaging of optical black pixels of an image sensor is described herein. By way of example, optical black pixel signals can be output by a row of pixels and provided in a parallel manner to a readout circuit. The readout circuit can include an averaging circuit that, when activated, generates an analog average of signals received at the readout circuit. The analog average can be sampled at any suitable signal output of the readout circuit, or multiple samples can be acquired to mitigate temporal noise, improve yield, and so on. By utilizing analog averaging, optical black pixel information can be obtained much more quickly than with digital counterparts, and optical black pixels can be fully utilized, as well as utilized more flexibly, in generating the black pixel output. Further sensor die size can be reduced, by replacing digital adders, dividers or shifters with the averaging circuit. | 01-30-2014 |
20140027612 | Integrated Image Sensor Package With Liquid Crystal Lens - A package structure with a sensor chip having a first substrate with front and back opposing surfaces, a plurality of photo detectors and contact pads formed at the front surface and electrically coupled together, a plurality of first electrical contacts each extending from the back surface and through the first substrate to one of the contact pads, and a plurality of second electrical contacts each extending from the back surface and through the first substrate to the front surface. The liquid crystal lens includes a layer of liquid crystal material, one or more lead patterns adjacent the layer of liquid crystal material, and a plurality of third electrical contacts each extending from one of the one or more lead patterns. The sensor chip is mounted to the liquid crystal lens such that each of the third electrical contacts is electrically connected to one of the plurality of second electrical contacts. | 01-30-2014 |
20140027613 | BAYER SYMMETRIC INTERLEAVED HIGH DYNAMIC RANGE IMAGE SENSOR - To generate data for color pixels in an image, Bayer symmetric interleaved exposures can more evenly spread the long exposure pixels in the vertical direction and produce a higher dynamic range by having pixels with different exposure times interleaved within different rows. Long and short exposure pixels can be interleaved across two adjacent rows to form 4 pixel wide by 2 pixel tall blocks that are repeated across a Bayer pattern color array. In each block, the first row can be three long and one short exposure pixel; and the second row can be three short and one long exposure pixel. The long exposure pixels can form an “L” shaped pattern rotated 90 degrees clockwise; and the short exposure pixels can form an “L” shaped pattern rotated 90 degrees counter-clockwise. Subsequent rows of the blocks may be offset horizontally to form diagonal bands of long and short exposure pixels. | 01-30-2014 |
20140027614 | SCANNING SYSTEM AND METHOD - A scanning system can include an illuminator, configured to produce an illuminating beam, and a fixation unit, configured to mechanically support a sample to be measured within the illuminating beam. The illuminating beam can reflect off the sample to produce reflected light. The system can further include a sensor, positioned angularly away from the illuminator, configured to receive the reflected light. The illuminating beam can include a wavelength spectrum having a FWHM less than 100 nm. In some examples, the fixation unit can be positioned based, in part, on a position of the illuminator and the sensor. In some examples, the sensor can include at least one imaging element that produces an image of the sample. In some examples, the illuminating beam can include a calibration pattern. In some examples, the illuminating beam and the reflected light can be angularly separated between ten degrees and fifteen degrees. | 01-30-2014 |
20140027615 | Driving Global Digital Signals Across Large Arrays - An image sensor system has a first stitched image sensor part that has multiple image sensing pixels and pixel gates. The multiple pixel gates are connected together by a first line on the first stitched image sensor part, and said multiple pixel gates are controlled by a first control signal. A second stitched image sensor part also has multiple sensing pixels and pixel gates, and the multiple pixel gates are connected together by a second line on said second stitched image sensor part, and said multiple pixel gates on said second stitched image sensor part are controlled by the first control signal. A driver for the first control signal, wherein said driver includes a first part for controlling said multiple pixel gates of said first stitched image sensor part and said driver has a second part, also driven by the same first control signal, for controlling said multiple pixel gates of said second stitched image sensor part. | 01-30-2014 |
20140027616 | PHOTON SEPARATION, ENCODING, MULTIPLEXING AND IMAGING - A method and device for obtaining information from a scene. A beam of photons associated with a scene is separated into a plurality of photon sub-beams. At least two photon sub-beams are optically encoded to generate at least two corresponding encoded photon sub-beams. Each encoded photon sub-beam is encoded based on a corresponding encoding function. The encoded photon sub-beams are combined to generate a combined photon beam. A detection device detects the combined photon beam to generate image data. The image data is decoded based on the plurality of encoding functions to generate a plurality of sub-images. Each sub-image corresponds to one of the at least two photon sub-beams of the plurality of photon sub-beams. | 01-30-2014 |
20140027617 | SOLID-STATE IMAGING APPARATUS AND METHOD FOR DRIVING THE SAME - A solid-state imaging apparatus includes a pixel array in which pixels are arranged in a matrix. Each pixel includes a photoelectric conversion element, a transfer transistor, an amplifier transistor, and a reset transistor. The pixel array an effective pixel part in which light enters the photoelectric conversion element and which is configured to output a video signal, an optical black pixel part in which the photoelectric conversion element is shielded from light and which is configured to output a reference signal, and a dummy pixel part. Of pixels connected to the same signal output line, effective pixels of the effective pixel part are configured such that a first potential is supplied from the reset transistor to a floating diffusion part, and clipping pixels of the dummy pixel part are configured such that a second potential is supplied from the reset transistor to the floating diffusion part. | 01-30-2014 |
20140027618 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit as defined herein are arranged in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a protection circuit as defined herein; the protection circuit has an impurity region as defined herein; the output transistor has an impurity region as defined herein; and the impurity regions of the protection circuits and the impurity regions of the output transistors are used in common to every adjacent two of the pixels as defined herein. | 01-30-2014 |
20140027619 | METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE - A method for driving a solid-state imaging device, which includes pixels arranged in a two-dimensional array of m columns in a horizontal scanning direction and n rows in a vertical scanning direction (n is an integer no less than 2 and m is a natural number), includes ending a reset operation on pixels in an i-th row among the pixels when a reset operation on pixels in an (i+1)-th row among the pixels is in progress, or time elapsed from when the reset operation on the pixels in the (i+1)-th row is ended is less than one-frame capturing time, where i is an integer no less than 1 and no greater than (n−1). | 01-30-2014 |
20140027620 | SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUS - A solid-state image pickup device is provided that is capable of effectively reducing color noise caused due to differences between sensitivities of color filters of an optical filter. The image pickup device includes a plurality of pixels arranged in a two dimensional matrix to respectively correspond to color filters. Pixels in odd-numbered rows of respective columns are connected to first column output lines, and pixels in even-numbered rows of respective columns are connected to second column output lines. First and second column units are provided to respectively correspond to the first and second column output lines, and amplify pixel signals output from these column output lines at gains that are set to different values according to the color filters. | 01-30-2014 |
20140034808 | CMOS IMAGE SENSOR SWITCH CIRCUIT FOR REDUCED CHARGE INJECTION - A switch circuit including structures to reduce the effects of charge injection. In an embodiment, a first transistor of the switch circuit is to receive a first signal and first and second dummy transistors of the switch circuit are each to receive a second signal, wherein the first transistor is connected between the first and second dummy transistors. The second signal is complementary to the first signal. In another embodiment, the first transistor, the first dummy transistor and the second dummy transistors are each connected via respective body connections to a first low supply voltage. | 02-06-2014 |
20140034809 | IMAGE SENSOR WITH A SPLIT-COUNTER ARCHITECTURE - A split-counter architecture is implemented within an image sensor system. A first counter within an image sensor region counts image data from pixel regions within the image sensor region, and outputs the most significant bits of the image data to a second counter external to the image sensor region, reducing the bandwidth required between the image sensor region and the second counter, and reducing the size of the counters within the image sensor region. | 02-06-2014 |
20140034810 | SIGNAL PROCESSING SYSTEM FOR SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE - Provided is a solid-state imaging device that includes capacitors in a number greater than a unit read-out number that are connected to a plurality of pixels via transfer lines, and that performs a step of transferring to and retaining in separate capacitors from each other a noise signal output from the pixels in a number corresponding to the unit read-out number; and a step of repeating, for as many times as the unit read-out number, by switching the pixels and the capacitors, an operation in which a signal-plus-noise signal output from one of the pixels is transferred to and retained in one of the other capacitors, and the noise signal and the signal-plus-noise signal that have been output from the same pixel and retained in separate capacitors are subsequently output at the same time. | 02-06-2014 |
20140034811 | OPTOELECTRONIC SHUTTER, METHOD OF OPERATING THE SAME AND OPTICAL APPARATUS INCLUDING THE OPTOELECTRONIC SHUTTER - An optoelectronic shutter, a method of operating the same, and an optical apparatus including the optoelectronic shutter are provided. The optoelectronic shutter includes a phototransistor which generates an output signal from incident input light and a light emitting diode serially connected to the phototransistor. The light emitting diode outputs output light according to the output signal, and the output signal is gain-modulated according to a modulation of a current gain of the phototransistor. | 02-06-2014 |
20140034812 | VOLTAGE GENERATION CIRCUIT, ANALOG-TO-DIGITAL CONVERSION CIRCUIT, SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A voltage generation circuit includes a control circuit which outputs a first digital signal, a DAC which outputs a first analog signal corresponding to the first digital signal, and an attenuator which is connected to an output terminal of the DAC and is configured to output a voltage signal obtained by attenuating the first analog signal input from the DAC. | 02-06-2014 |
20140042297 | IMAGE CAPTURE BASED ON SCANNING RESOLUTION SETTING IN IMAGING READER - An arrangement for, and a method of, electro-optically reading a target by image capture, employ an aiming assembly for projecting an aiming light pattern on the target that is located within a range of working distances relative to a housing, an imaging assembly for capturing an image of the target and of the aiming light pattern over a field of view, and a controller for determining a distance of the target relative to the housing based on a position of the aiming light pattern in the captured image, for determining a scanning resolution based on the determined distance, for comparing the determined scanning resolution with a scanning resolution setting, and for processing the captured image based on the comparison. | 02-13-2014 |
20140042298 | CMOS Image Sensor Chips with Stacked Scheme and Methods for Forming the Same - A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit. | 02-13-2014 |
20140042299 | CMOS Image Sensor Chips with Stacked Scheme and Methods for Forming the Same - A device includes an image sensor chip including an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip. The read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip. The peripheral circuit chip includes a logic circuit, a through via penetrating through a semiconductor substrate of the peripheral circuit chip, and an electrical connector at a bottom surface of the peripheral circuit chip. The electrical connector is electrically coupled to the logic circuit in the peripheral circuit chip through the through via. | 02-13-2014 |
20140042300 | IMAGE SENSOR AND COLUMN ANALOG-TO-DIGITAL CONVERTER THEREOF - An image sensor and a column analog-to-digital converter thereof are provided. The column analog-to-digital converter includes a counter providing a counter result, a ramp signal generator providing a ramp signal and a start signal, a sampling and comparing array, a first latch array, a second latch array, and an arithmetic unit. The sampling and comparing array outputs a plurality of brightness transformation signals according to the ramp signal, the start signal, and initial voltages and brightness voltages of a plurality of photosensitive pixels. The first and the second latch arrays latch the counter result in response to the brightness transformation signals and output a plurality of first brightness latch values during a first period and a plurality of second brightness latch values during a second period. The arithmetic unit calculates the brightness values of the photosensitive pixels according to the first brightness latch values and the second brightness latch values. | 02-13-2014 |
20140042301 | Input Offset Cancellation for Charge Mode Readout Image Sensors - An image sensor that uses the same capacitor to sample the image and the amplifier offset. Readout is thus inherently compensated. | 02-13-2014 |
20140042302 | SOLID STATE IMAGE SENSOR, METHOD FOR DRIVING A SOLID STATE IMAGE SENSOR, IMAGING APPARATUS, AND ELECTRONIC DEVICE - A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row. | 02-13-2014 |
20140042303 | CMOS SENSOR WITH LOW PARTITION NOISE AND LOW DISTURBANCE BETWEEN ADJACENT ROW CONTROL SIGNALS IN A PIXEL ARRAY - A CMOS image sensor includes a pixel array including a plurality of unit pixels with individual rows of unit pixels being coupled to respective row control signal lines, and a buffer including plural row control signal drivers. Each driver is coupled to a respective one of the row control signal lines and is configured to provide a row control signal pulse to a respective row control signal line in response to an input pulse when the row control signal line is in an active state and to bias the row control signal line at a ground voltage when the respective row control signal line is in an inactive state. Each driver has a first drive capability when the row control signal line is in the active state and a second drive capability greater than the first drive capability when the row control signal line is in an inactive state. | 02-13-2014 |
20140048682 | DIGITAL IMAGE PROCESSING READOUT INTEGRATED CIRCUIT (ROIC) HAVING MULTIPLE SAMPLING CIRCUITS - Embodiments of the present invention provide an approach for improving overall chip speed by providing one or more sampling circuits in an ROIC so that signal processing and signal reading out operations may occur simultaneously instead of successively. | 02-20-2014 |
20140048683 | READOUT INTEGRATED CIRCUIT FOR DYNAMIC IMAGING - A sampling circuit for dynamic imaging is provided. Specifically, embodiments of the present invention relate to a readout integrated circuit (ROIC) for dynamic imaging and a related image sensor. In one embodiment of the present invention, a sampling circuit is provided that comprises: an amplifier circuit, which amplifies charge signals generated at photo diodes and converts them to voltage signals; a filter circuit (optional) that receives and filters the voltage signals to yield a filtered signal; a sampling circuit, which samples the voltage signals and outputs a sampled signal in accordance with a sampling control signal; and a digital converter, which converts the sampled signal into a digital format and outputs a digital signal. | 02-20-2014 |
20140048684 | HIGH PERFORMANCE SCAN ENGINE WITH REAR-FACING IMAGE SENSOR IN HANDHELD ARRANGEMENT FOR, AND METHOD OF, IMAGING TARGETS USING THE SCAN ENGINE - An arrangement for, and a method of, electro-optically reading a target by image capture, employ a scan engine in a handheld housing having a tilted handle. A single tilted printed circuit board (PCB) in the handle has front and rear surfaces that respectively face toward and away from the target during reading. An optical assembly having a pair of fold mirrors is mounted on the rear surface, for receiving return light from the target through an aperture in the PCB along the horizontal, and for directing the return light along a folded path. An imaging lens assembly projects the return light onto a solid-state, two-dimensional, image sensor to enable the return light to be detected over a field of view, and to generate an electrical signal indicative of the detected return light. | 02-20-2014 |
20140048685 | NOISE-MATCHING DYNAMIC BIAS FOR COLUMN RAMP COMPARATORS IN A CMOS IMAGE SENSOR - Embodiments of an image sensor including a pixel array with a plurality of pixels arranged into rows and columns. Control circuitry coupled to the pixels in each row, and an analog-to-digital converter is coupled to the pixels in each column of the pixel array. Each analog-to-digital converter includes a ramp comparator, and a variable current source coupled to the ramp comparator to provide a variable bias current to the ramp comparator. The bias current can adjusted during reading of a row of pixels according to a dynamic bias current profile that maintains at least a specified margin between the random noise of the pixels and an acceptable noise level. Other embodiments are disclosed and claimed. | 02-20-2014 |
20140048686 | CAPACITANCE SELECTABLE CHARGE PUMP - A step-up converter includes an input coupled to receive a first voltage potential and an output coupled to output a second voltage potential higher than the first voltage potential. The step-up converter also includes an array of capacitance charge pumps. Each of the capacitance charge pumps in the array includes switches to be modulated to individually run each of the capacitance charge pumps by selectively connecting each of the capacitance charge pumps to the input and the output. The step-up converter further includes a control module coupled to the switches of each of the capacitance charge pumps and configured to modulate the switches at a substantially fixed frequency. The control module modulates the switches of selected capacitance charge pumps in the array in response to a current draw on the output. The step-up converter may be included in an image sensor. | 02-20-2014 |
20140048687 | HANDHELD IMAGING APPARATUS FOR, AND METHOD OF, IMAGING TARGETS USING A HIGH PERFORMANCE, COMPACT SCAN ENGINE - An apparatus for, and a method of, electro-optically reading a target by image capture, employ a scan engine in a handheld housing having a tilted handle. A single tilted printed circuit board (PCB) in the handle has front and rear surfaces that respectively face toward and away from the target during reading. An optical assembly having a pair of fold mirrors is mounted on the rear surface, for receiving return light from the target through an aperture in the PCB along the horizontal, and for directing the return light along an internal folded optical path. An imaging lens assembly is mounted between the fold mirrors and has an imaging axis that extends generally parallel to the PCB. The imaging lens assembly projects the return light onto a solid-state, two-dimensional, image sensor to enable the return light to be detected over a field of view, and to generate an electrical signal indicative of the detected return light. | 02-20-2014 |
20140048688 | OBJECT DETECTION APPARATUS AND METHOD FOR VEHICLE - Provided is an object detection apparatus using a general camera sensor for adjusting detection sensitivity to an object (pedestrian or animal) even in an urban area in which the scattered reflection of a light source is severe. The object detection apparatus overcomes the limitations of a related art object detection apparatus using a thermal imaging camera which is incapable of adjusting detection sensitivity to an obstacle (pedestrian or animal) in an urban area in which the scattered reflection of a light source is severe. | 02-20-2014 |
20140048689 | PIXELS, IMAGERS AND RELATED FABRICATION METHODS - Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications. | 02-20-2014 |
20140048690 | SOLID-STATE IMAGING DEVICE - To reduce the number of capacitative elements on a chip to decrease a surface ratio of a peripheral circuit section including capacitative elements to a pixel array section, while maintaining noise resistance of signals high. There is provided a solid-state imaging device including: a plurality of unit pixels; a plurality of transfer lines; and a plurality of switches, wherein each of the unit pixels includes a photoelectric conversion element and a charge voltage conversion element, and outputs respectively a noise voltage generated when the charge voltage conversion element is reset and a signal-noise sum voltage obtained by adding to the noise voltage a signal voltage generated by photoelectric conversion to the other transfer lines that are connected via the switches to the transfer line to which the pixel group including the unit pixel belongs. | 02-20-2014 |
20140048691 | AMBIENT INFRARED DETECTION IN SOLID STATE SENSORS - A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device. | 02-20-2014 |
20140054443 | CMOS TIME DELAY AND INTEGRATION IMAGE SENSOR - A CMOS time delay and integration image sensor is disclosed having analog sampling stages coupled to the column bus that correspond to a pixel in the column. The analog sampling stages have a first memory element that stores the pixels reset level signal and a second memory element that stores an output signal of a previous analog sampling stage in the column. The analog sampling stage integrates the signal of the previous analog sampling stage with the sampled photosignal of the corresponding pixel and subtracts the reset level. The analog sampling stage architecture provides global shuttering and correlated double sampling and only requires a single analog to digital conversion for each TDI line time. | 02-27-2014 |
20140054444 | SOLID STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes a first SiGe layer provided at an uppermost layer of a photoelectric conversion layer from the viewpoint of an incident light side, and a second SiGe layer provided under the first SiGe layer in the photoelectric conversion layer and having a higher Ge concentration than the first SiGe layer. | 02-27-2014 |
20140054445 | IMAGE CAPTURING APPARATUS AND CONTROL METHOD THEREFOR - An image capturing apparatus having pixels is provided. Each pixel includes a photoelectric conversion unit including a charge accumulation region, an output unit configured to output a signal based on a potential of a node electrically connected to the charge accumulation region, and a connection unit configured to electrically connect a capacitance to the node. The charge accumulation region includes a first portion and a second portion. Charge is configured to be first accumulated in the first portion, and, after the first portion is saturated, be accumulated in the second portion. The output unit is configured to output a first signal based on the potential of the node before the capacitance is connected thereto, and, then a second signal based on the potential of the node after the capacitance is connected thereto. | 02-27-2014 |
20140054446 | Binary Pixel Circuit Architecture - An integrated-circuit image sensor that includes an array of pixel regions composed of binary pixel circuits. Each binary pixel circuit includes a binary amplifier having an input and an output. The binary amplifier generates a binary signal at the output in response to whether an input voltage at the input exceeds a switching threshold voltage level of the binary amplifier. A light-detecting element of the binary pixel circuit is coupled to the input of the binary amplifier. Initialization circuitry of the binary pixel circuit is coupled to the input of the binary amplifier. The initialization circuitry sets the input voltage to a level that is offset relative to the switching threshold voltage level of the binary amplifier by an offset voltage amount, the offset voltage amount representing a threshold amount of light incident on the light detecting element. | 02-27-2014 |
20140054447 | SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE - In a solid-state imaging device and an imaging device, transistors on a first substrate are configured as N-type transistors. Of transistors on a second substrate, a sampling transistor and an analog memory reset transistor connected to an analog memory are configured as P-type transistors. A difference between the potential of back gates of the sampling transistor and the analog memory reset transistor and a potential at the time of resetting the analog memory is less than a difference between the potential of a back gate of the N-type transistor and the potential at the time of resetting the analog memory. | 02-27-2014 |
20140054448 | COLOR FILTER ARRAY AND IMAGE SENSOR - The color filter array | 02-27-2014 |
20140061433 | COMPARATOR CIRCUIT FOR REDUCED OUTPUT VARIATION - A comparator circuit for generating a signal representing a comparison of an input signal and a reference signal. In an embodiment, the comparator circuit includes a first stage and a second stage to provide respective signal amplification, where switch circuitry of the second stage switchedly couples respective elements of the first and second stages. The comparator circuit further includes a third stage to generate an output signal based on an intermediate signal of the second stage. In another embodiment, feedback circuitry of the comparator circuit is to selectively control a voltage of the output stage based on the output signal. | 03-06-2014 |
20140061434 | SOLID-STATE IMAGING DEVICE - In an embodiment, each of first and second pixel rows has pixels. A first transfer gate is arranged between the first and second pixel rows. Second transfer gates are arranged adjacently to odd-numbered pixels of the second pixel row, respectively. Third transfer gates are arranged adjacently to even-numbered pixels of the second pixel row, respectively. A first CCD register is arranged adjacently to the second transfer gates and third transfer gates. Fourth transfer gates are arranged adjacently to odd-numbered accumulation gates of the first CCD register. A second CCD register is arranged adjacently to the fourth transfer gates. An output portion converts transferred charges into a voltage signal. A clear gate controls draining of the charges accumulated in the first pixel row to a first drain portion. A switch gate controls draining of charges transferred in a row direction in the second CCD register to a second drain portion. | 03-06-2014 |
20140061435 | Programmable Global Shutter Timing to Mitigate Transient Glitching - An image sensor system using a circuit that automatically provides a multiple point output which represents, in a first mode, each of the multiple points receiving outputs at substantially the same time delayed only by a transit time across a wire connecting the multiple point outputs, and in a second mode, each of the multiple points producing outputs that are delayed by a delay time, where each output is delayed relative to each other output by said delay time in the second mode. | 03-06-2014 |
20140061436 | SOLID STATE IMAGING DEVICE - A solid state imaging device includes: first and second photoelectric conversion units to generate charges; a isolation portion to isolate the photoelectric conversion units; first and second floating diffusions; first and second transfer transistors to transfer the generated charges to the floating diffusions; one or two transfer control lines to supply transfer pulses to the transfer transistors; one or two contacts to connect gates of the transfer transistors with the transfer control lines, wherein: the first and second transfer transistors are symmetrical with respect to the isolation portion; the contacts are symmetrical with respect to the isolation portion; values of parasitic capacitance and resistance of paths in which the transfer pulses are supplied from the transfer control lines to (i) the first and (ii) the second transfer transistors are equal; and a focus detection is performed using signals based on charges generated in the photoelectric conversion units. | 03-06-2014 |
20140061437 | AD CONVERSION CIRCUIT AND SOLID-STATE IMAGE PICKUP DEVICE - An AD conversion circuit includes: a comparison unit that receives an analog signal and a reference signal, compares voltages of the signals, and outputs a first comparison signal; a signal generation unit that outputs a second comparison signal for switching a logic state, and outputs a third comparison signal that is a result of a logic operation on the first comparison signal and the second comparison signal; a control unit that outputs an enable signal; a clock generation unit that outputs first to n | 03-06-2014 |
20140061438 | IMAGE SENSOR MODULE AND METHOD FOR PRODUCING SUCH A MODULE - An image sensor module includes an image sensor bearer and an image sensor, the image sensor bearer being fashioned as an injection-molded circuit bearer, and the image sensor being situated on the image sensor bearer, and the image sensor bearer including at least one holding device that is integrally formed on the image sensor bearer. | 03-06-2014 |
20140061439 | SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS WITH SOLID-STATE IMAGING DEVICE, AND DISPLAY DEVICE - There is provided a solid-state imaging device including a photoelectric conversion unit, and a reflecting plate that includes a first portion that is provided on a side opposing a light incidence side with respect to the photoelectric conversion unit and formed at a center of a region in which light beams are collected, and a second portion that is formed on a boundary of adjacent regions to be convex on the incidence side with respect to the first portion, and collects reflected light beams within the regions by generating a phase difference between reflected light beams on the first portion and reflected light beams on the second portion. | 03-06-2014 |
20140070074 | SEMICONDUCTOR INTEGRATED CIRCUIT AND IMAGE SENSOR - According to one embodiment, a semiconductor integrated circuit includes: a CDS (Correlated Double Sampling) circuit; and an adjustment voltage generator. The CDS circuit has a first capacitor and a second capacitor. The first capacitor has a first electrode and a second electrode. The second capacitor has a third electrode and a fourth electrode. The CDS circuit is configured to hold a voltage corresponding to light intensity as a signal voltage. The adjustment voltage generator is configured to supply an adjustment voltage to the CDS circuit. A first signal voltage is supplied to the first electrode, and a second signal voltage is supplied to the third electrode. The second electrode and the fourth electrode are commonly connected and supplied with the adjustment voltage from the adjustment voltage generator. | 03-13-2014 |
20140070075 | RADIATION DETECTOR AND METHOD - Embodiments of the invention provide a radiation detector comprising a pixel element, the pixel element comprising: a first diode element having a node capacitance associated therewith, the element being operable to pass electrical charge therethrough between terminals thereof in response to incident radiation; and an auxiliary charge storage reservoir, wherein the detector is operable by means of charge transfer between the auxiliary charge storage reservoir and a first terminal of the first diode element to reduce a rate at which an electrical potential V | 03-13-2014 |
20140070076 | Real-Time Composite 3-D for a Large Field of View Using Multiple Structured Light Sensors - An apparatus for mounting and connecting a plurality of structured light sensors to a personal computer or other computing device. Up to eight structured light sensors of different size and configurations are adjustably mounted to allow positioning of each sensor as desired. The positioning permits the resolution of the sensors to be optimized without compromising the field of view. Where each structure projects a structured light pattern, several mechanisms are sued to control sequential interference-free collection of data. Mechanisms include mechanical shutters, electrically controllable polarized glass, and software control of a sensor's projector. | 03-13-2014 |
20140077057 | 3D-STACKED BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MAKING THE SAME - A stacked image sensor and method for making the same are provided. The stacked image sensor includes an upper chip with a pixel array thereon. The second chip includes a plurality of column circuits and row circuits associated with the columns and rows of the pixel array and disposed in respective column circuit and row circuit regions that are arranged in multiple groups. Inter-chip bonding pads are formed on each of the chips. The inter-chip bonding pads on the second chip are arranged linearly and are contained within the column circuit regions and row circuit regions in one embodiment. In other embodiments, the inter-chip bonding pads are staggered with respect to each other. In some embodiments, the rows and columns of the pixel array include multiple signal lines and the corresponding column circuit regions and row circuit regions also include multiple inter-chip bonding pads. | 03-20-2014 |
20140077058 | SOLID-STATE IMAGE SENSOR, CONTROL METHOD FOR THE SAME, AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including a plurality of unit pixels each including a photoelectric transducer generating a charge corresponding to an amount of incident light and accumulating the charge therein, a first transfer gate transferring the charge accumulated in the photoelectric transducer, a charge holding region where the charge is held, a second transfer gate transferring the charge, a floating diffusion region where the charge is held to be read out as a signal, a charge discharging gate transferring the charge to a charge discharging part, and a structure including an overflow path formed in a boundary portion between the photoelectric transducer and the charge holding region. | 03-20-2014 |
20140077059 | SOLID STATE IMAGING DEVICE, DRIVING METHOD OF SOLID STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - There is provided a solid state imaging device including a photoelectric conversion unit that performs photoelectric conversion of converting incident light into charges and accumulates the charges, a charge-voltage conversion unit that converts the charges which have been subjected to the photoelectric conversion by the photoelectric conversion unit into a voltage, a charge transfer unit that transfers charges to the charge-voltage conversion unit, a charge reset unit that resets charges of the charge-voltage conversion unit, and a driving unit that performs driving such that a potential of a drain of the charge reset unit is controlled so that the charges are accumulated in the photoelectric conversion unit and the charge-voltage conversion unit up to a saturation level, and then the photoelectric conversion unit is subject to light exposure. | 03-20-2014 |
20140077060 | SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE - There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate. | 03-20-2014 |
20140077061 | BACKSIDE ILLUMINATED IMAGE SENSORS HAVING BURIED LIGHT SHIELDS WITH ABSORPTIVE ANTIREFLECTIVE COATING - An image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in the front surface of a semiconductor substrate. Buried light shielding structures may be formed on the back surface of the substrate to prevent pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. The buried light shielding structures may be lined with absorptive antireflective coating material to prevent light from being reflected off the surface of the buried light shielding structures. Forming buried light shielding structures with absorptive antireflective coating material can help reduce optical pixel crosstalk and enhance signal to noise ratio. | 03-20-2014 |
20140077062 | BACK SIDE ILLUMINATED IMAGE SENSORS WITH BACK SIDE CHARGE STORAGE - A back side illuminated image sensor may be provided with an array of image sensor pixels. Each image sensor pixel may include a substrate having a front surface and a back surface. The image sensor pixels may have a charge storage region formed at the back surface and a charge readout node formed at the front surface of the substrate. The image sensor pixels may receive image light at the back surface of the substrate. Photo-generated charge may be accumulated at the charge storage region during a charge integration cycle. Upon completion of the charge integration cycle, a transfer gate formed at the front surface may be pulsed high to move the charge from the charge storage region to the charge readout node. The charge may be converted to a voltage at the charge readout node and may be read out using a rolling shutter readout mode. | 03-20-2014 |
20140077063 | IMAGERS WITH STACKED INTEGRATED CIRCUIT DIES - An imager may include an imaging die that is stacked with an image processing die. The imaging die may generate output signals from received light. The image processing die may process the output signals. Through-silicon vias of the imaging die or solder balls may electrically couple the imaging die to the image processing die and convey the output signals to the image processing die. The imaging die may include a pixel array that generates pixel signals from the received light. The image processing die may generate control signals that control the imaging die and are conveyed to the imaging die over the through-silicon vias or solder balls. | 03-20-2014 |
20140077064 | OPTIC INSTRUMENT WITH WAVEFRONT ANALYSER - In the field of optic instruments comprising at least one optical architecture, a photoreception assembly and means for acquisition and analysis of the images arising from the said photoreception assembly, the acquisition and analysis means comprising an algorithm of phase diversity type, an optical architecture comprises an optical plate of low or zero optical power arranged in the vicinity of the photoreception assembly and disposed so as to form on all or part of the said assembly a first focused image and a second image defocused by a first predetermined value and shifted by a second predetermined value with respect to the first image. The optic instrument can advantageously be a space telescope. | 03-20-2014 |
20140077065 | AD CONVERSION CIRCUIT AND SOLID-STATE IMAGING APPARATUS - An AD conversion circuit and a solid-state imaging apparatus reduce the occurrence of errors in encoding a lower phase signal while securing a degree of freedom of selection of a count clock. A detection circuit performs an operation of detecting logic states of m (m is a natural number of 2 or more) lower phase signals in a signal group that a plurality of lower phase signals latched by the latch unit is arranged, while selecting the m lower phase signals in a predetermined order so that the order thereof becomes the same as the order of the signal group and outputs a state detection signal at the time of detecting that the logic states of the m lower phase signals are in a predetermined logic state in the detection operation. The predetermined order is defined depending on a predetermined signal and an encoding method. | 03-20-2014 |
20140077066 | MANUFACTURING OF AN IMAGER DEVICE AND IMAGER DEVICE - Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed. | 03-20-2014 |
20140077067 | SOLID-STATE IMAGING DEVICE - Unit pixel cells each includes: a photoelectric conversion film; a transparent electrode; a pixel electrode; an amplification transistor; a reset transistor; and an element isolation STI and a leakage suppression region for electrically isolating the amplification transistor and the reset transistor, the first isolation region being in a silicon substrate, between the amplification transistor and the reset transistor, the reset transistor including: a gate electrode; and a drain region which is connected to the pixel electrode, and is in the silicon substrate, between the gate electrode and element isolation STI and the leakage suppression region, in which a depletion layer formed by a first PN junction between the drain region and its surrounding region and in contact with a surface of the silicon substrate is narrower than a depletion layer formed by a second PN junction between the drain region and its surrounding region and formed in the silicon substrate. | 03-20-2014 |
20140077068 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF - A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential. | 03-20-2014 |
20140077069 | SOLID-STATE IMAGING DEVICE WHICH CAN EXPAND DYNAMIC RANGE - According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT1>QSAT2 is satisfied. When a saturation level of the first filter is denoted by QSAT1 and a saturation level of the second filter is denoted by QSAT2. | 03-20-2014 |
20140084135 | Backside-Illuminated Photosensor Array With White, Yellow ad Red-Sensitive Elements - A monolithic backside-sensor-illumination (BSI) image sensor has a sensor array is tiled with a multiple-pixel cells having a first pixel sensor primarily sensitive to red light, a second pixel sensor primarily sensitive to red and green light, and a third pixel sensor having panchromatic sensitivity, the pixel sensors laterally adjacent each other. The image sensor determines a red, a green, and a blue signal comprising by reading the red-sensitive pixel sensor of each multiple-pixel cell to determine the red signal, reading the sensor primarily sensitive to red and green light to determine a yellow signal and subtracting the red signal to determine a green signal. The image sensor reads the panchromatic-sensitive pixel sensor to determine a white signal and subtracts the yellow signal to provide the blue signal. | 03-27-2014 |
20140084136 | OPTICAL RECOGNITION SYSTEM AND METHOD THEREOF - The present invention is related to an optical recognition system and a method thereof, and more particularly to an optical recognition system and a method that adopts a single-slope analog-to-digital converter to proceed a single-slope analog-to-digital conversion in order to have an image with a wide dynamic range. | 03-27-2014 |
20140084137 | SWITCHABLE SUBSTRATES FOR PHOTOGRAPHY AND VIDEO ENHANCEMENT APPLICATIONS - This disclosure provides systems, methods and apparatus relating to implementations of a switchable substrate that can be used in an imaging device. In one aspect, the switchable substrate includes a plurality of pixels, with each pixel having at least one switchable element. The switchable element can be switched between a first optical state and a second optical state. In the first optical state, a first spectral band of broadband light is reflected from the switchable element while a second spectral band is transmitted through the switchable element. In the second optical state, the first spectral band of the broadband light is transmitted through the switchable element while the second spectral band is reflected from the switchable element. | 03-27-2014 |
20140084138 | SOLID-STATE IMAGE SENSOR, METHOD FOR THE SAME, AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including a photoelectric conversion part which generates a charge corresponding to received light and accumulates the charge therein, a charge holding part in which before the charge accumulated in the photoelectric conversion part is transferred to a floating diffusion region, the charge is held for a predetermined time, a first transfer gate which transfers the charge accumulated in the photoelectric conversion part to the charge holding part, a second transfer gate which transfers the charge held in the charge holding part to the floating diffusion region, and a charge discharging gate which discharges the charge in the photoelectric conversion part. Before charge accumulation in the photoelectric conversion part for the next frame is started, part of the charge accumulated in the charge holding part is discharged. | 03-27-2014 |
20140084139 | IMAGE SENSING APPARATUS - Each microlens exhibits a distortion aberration characteristic in which the ratio of a range where a light beam having passed through the microlens forms an image on a predetermined number of pixels associated with the microlens when the imaging optical system takes the second f-number, to a range where a light beam having passed through the microlens forms an image when the imaging optical system takes the first f-number is higher than the ratio of the first f-number to the second f-number. | 03-27-2014 |
20140084140 | DATA PROCESSING CIRCUIT AND SOLID-STATE IMAGING DEVICE - A data processing circuit that holds a state of a clock signal of each phase of an input multi-phase clock at a timing of an input latch clock, the multi-phase clock including clock signals of a plurality of phases sequentially shifted at certain intervals determined in advance, and generates a digital signal obtained by digitizing the states of the phases of the multi-phase clock at a timing at which the latch clock is input, the data processing circuit including: a latch portion including n latch unit groups (n is an integer of a power of 2) including the same number and a plurality of latch units, each latch unit holding the state of the clock signal of the corresponding phase of the multi-phase clock and outputting an output signal indicating the held state of the clock signal. | 03-27-2014 |
20140084141 | LIGHT BLOCKING INK, MICROLENS ARRAY UNIT, IMAGE PROCESSING APPARATUS - A light blocking ink includes a vinyl ether compound, an alicyclic epoxy compound, an oxetane compound, a light blocking material, and a photoacid generating agent. The light blocking ink may be employed in a microlens array unit to block stray light. The microlens array unit may be employed in an image processing apparatus. | 03-27-2014 |
20140084142 | SOLID-STATE IMAGE TAKING DEVICE AND ELECTRONIC APPARATUS - A solid-state image taking device including a pixel section and a scan driving section wherein on each pixel column included in the pixel area determined in advance to serve as a pixel column having the unit pixels laid out in the scan direction, the opto-electric conversion section and the electric-charge holding section are laid out alternately and repeatedly, and on each of the pixel columns in the pixel area determined in advance, two the electric-charge holding sections of two adjacent ones of the unit pixels are laid out disproportionately toward one side of the scan direction with respect to the optical-path limiting section or the opto-electric conversion section. | 03-27-2014 |
20140084143 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device. | 03-27-2014 |
20140091201 | RANDOM ESTIMATION ANALOG-TO-DIGITAL CONVERTER - A random estimation analog-to-digital converter for converting a first analog signal into a digital signal includes a random bit generator, a digital-to-analog converter, a summer, an M-bit analog-to-digital converter, and a digital combiner. The random bit generator generates random least significant bits (LSBs) and the digital-to-analog converter then converts the random LSBs into a second analog signal. The summer subtracts the second analog signal from the first analog signal in the analog domain. The M-bit analog-to-digital converter then converts the modified first analog signal into the most significant bits (MSBs) of the digital image signal. The digital combiner combines the random LSBs with the MSBs in the digital domain to generate the digital signal. In one example, the random LSBs are extra bits that are beyond the maximum resolution of the M-bit analog-to-digital converter. | 04-03-2014 |
20140091202 | IMAGING APPARATUS AND DRIVING METHOD FOR IMAGING APPARATUS - An aspect of the present disclosure is directed to an imaging apparatus capable of reducing fluctuation in voltage in a current supply line due to fluctuation in a current consumption amount generated when an output circuit shifts from a first state to a second state, and a method for driving the imaging apparatus. | 04-03-2014 |
20140091203 | DETECTION APPARATUS, DETECTION SYSTEM, AND METHOD FOR PRODUCING DETECTION APPARATUS - A detection apparatus includes a plurality of conversion elements, an interlayer insulating layer, and a covering layer. Each of the plurality of conversion elements includes an electrode electrically connected to a corresponding one of a plurality of switching elements and a semiconductor layer disposed on the electrode. The interlayer insulating layer is disposed so as to cover the plurality of switching elements and composed of an organic material, and has a surface including a first region and a second region located outside the first region. The electrodes are disposed on the surface of the interlayer insulating layer in the first region. The covering layer is disposed on the surface of the interlayer insulating layer in the second region and composed of an inorganic material. | 04-03-2014 |
20140091204 | IMAGE PICKUP DEVICE - An imaging device includes: a movable lens unit including at least one lens for converging light from a subject and a lens holder supporting the at least one lens; a body base supporting the movable lens unit so as to be capable of moving along a first direction and a second direction which are orthogonal to each other on a plane perpendicular to an optical axis of the at least one lens and along a third direction which is parallel to the optical axis of the at least one lens; an imager being supported by the body base for converting light transmitted through the movable lens unit to an electrical signal; a driving mechanism being provided on the movable unit and/or body base for driving the movable lens unit along the first, second, and third directions; and a plurality of strain detectors provided between the movable unit and the body base. | 04-03-2014 |
20140091205 | IMAGE SENSOR, IMAGE CAPTURING APPARATUS, AND FORMING METHOD - An image sensor comprising a plurality of pixels, each of at least part of the plurality of pixels comprises: a plurality of photoelectric conversion parts; a microlens; and a plurality of interlayer lenses formed between the plurality of photoelectric conversion parts and the microlens and integrally formed to correspond to the plurality of photoelectric conversion parts. The plurality of interlayer lenses cause light incident on the plurality of interlayer lenses to enter the corresponding plurality of photoelectric conversion parts. | 04-03-2014 |
20140097328 | LOW POWER WIDE DYNAMIC RANGE CMOS IMAGER OUTPUT CIRCUIT - An imager has an array of pixels arranged in rows and columns, readout circuitry electrically coupled to the columns to receive signals from the pixels, the readout circuitry having at least one signal path with gain switching, and a threshold detector electrically coupled to the readout circuitry to set a gain to be applied by the readout circuitry. | 04-10-2014 |
20140097329 | Ultra-High Speed Imaging Array with Orthogonal Readout Architecture - A plurality of unit pixels in a two dimensional imaging array are arranged in a manner that signal charges along a given row are added to other relevant signal charges of the same row. Signal charges along a given column are added to other relevant signal charges of the same column. Summed charge values are output simultaneously from rows and columns to produce one row and one column of image data. The resulting summed data is temporarily stored in on-chip buffers and then output from the chip during the integration time of the next imaging cycle with no loss in imaging duty cycle. | 04-10-2014 |
20140097330 | METHOD OF TESTING IMAGE SENSOR AND RELATED APPARATUS THEREOF - A method of testing an image sensor having a plurality of sensing units includes: utilizing the image sensor to generate a plurality of sensing results respectively corresponding to a plurality of captured images, wherein each sensing result includes a plurality of sensing values respectively generated by the sensing units; and generating a testing result which indicates a performance of the image sensor according to changing of the sensing results. | 04-10-2014 |
20140103189 | Compact In-Pixel High Dynamic Range Imaging - Embodiments of the invention describe providing a compact solution to provide high dynamic range imaging (HDRI or simply HDR) for an imaging pixel by utilizing a control node for resetting a floating diffusion node to a reference voltage value and for selectively transferring an image charge from a photosensitive element to a readout node. Embodiments of the invention further describe control node to have to a plurality of different capacitance regions to selectively increase the overall capacitance of the floating diffusion node. This variable capacitance of the floating diffusion node increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system, as well as increasing the signal-to-noise ratio (SNR) of the imaging system. | 04-17-2014 |
20140103190 | BINARY IMAGE SENSOR AND IMAGE SENSING METHOD - A binary image sensor includes; binary pixels, each having a transistor structure, being coupled between a drain line and a column line and generating a number of photons in response to incident light, sense amplifiers connected to a respective column line and outputting a binary value in response to detecting a voltage corresponding to current flowing to the column line when a gate voltage is applied to a gate line connected to a gate of a binary pixel, and an accumulator configured to accumulate binary values output by the sense amplifiers. | 04-17-2014 |
20140103191 | SENSING METHODS FOR IMAGE SENSORS - A sensing method for an image sensor includes: connecting a first column line with a second column line in response to switch signals; and sensing a first pixel signal generated based on a first signal output from a first pixel and a second signal output from a second pixel, the first pixel and the second pixel being connected to the first column line and the second pixel being connected to the second column line. | 04-17-2014 |
20140103192 | BINARY CMOS IMAGE SENSORS, METHODS OF OPERATING SAME, AND IMAGE PROCESSING SYSTEMS INCLUDING SAME - A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light. | 04-17-2014 |
20140103193 | BINARY IMAGE SENSORS AND UNIT PIXELS THEREOF - A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed. | 04-17-2014 |
20140103194 | Coded-light detection system including a camera, light sensor and augmented information display - There is disclosed a sensing device ( | 04-17-2014 |
20140103195 | SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS USING THE SAME - An embodiment of the invention provides a solid-state image pickup device, including a pixel portion in which a plurality of light receiving areas corresponding to different wavelengths, respectively, are disposed, and transistors used commonly to the plurality of adjacent light receiving areas in the pixel portion, and disposed so as to be brought near to a side of the light receiving area, corresponding to the shorter wavelength, of the plurality of adjacent light receiving areas. | 04-17-2014 |
20140110565 | IMAGE SENSOR DEVICE WITH IR FILTER AND RELATED METHODS - An image sensor device may include a bottom interconnect layer, an image sensing IC above the bottom interconnect layer and coupled thereto, and an adhesive material on the image sensing IC. The image sensor device may include an IR filter layer above the lens layer, and an encapsulation material on the bottom interconnect layer and surrounding the image sensing IC, the lens layer, and the IR filter layer. The image sensor device may include a top contact layer above the encapsulation material and including a dielectric layer, and a contact thereon, the dielectric layer being flush with adjacent portions of the IR filter layer. | 04-24-2014 |
20140117203 | Infrared Reflection/Absorption Layer For Reducing Ghost Image of Infrared Reflection Noise And Image Sensor Using the Same - An image sensor includes a photo sensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photo sensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor. | 05-01-2014 |
20140117204 | Image Sensor - An image sensor includes a pixel array including a plurality of unit pixels, each having a photodiode, a transfer transistor, a reset transistor, a drive transistor, and a select transistor, an analog to digital converter for sampling an analogous sensing signal from the pixel array and converting the analogous sensing signal into a digital sensing signal, and a timing controller for forwarding a transfer signal which turns on the transfer transistor until after sampling the sensing signal. | 05-01-2014 |
20140117205 | PIXEL, PIXEL ARRAY, IMAGE SENSOR INCLUDING PIXEL ARRAY, AND METHOD OF DRIVING PIXEL ARRAY - Provided are a pixel, a pixel array, an image sensor including the pixel array, and a method of driving the pixel array. The pixel includes a photoelectric converter, a capacitor, and a switching element. The capacitor accumulates electric charges converted by the photoelectric converter. The switching element outputs a potential of the capacitor. The switching element includes a transfer switching element transferring the electric charges, converted in the photoelectric converter, to the capacitor. The capacitor serves as a storage through multi-clocking of the transfer switching element. | 05-01-2014 |
20140117206 | PIXEL ARRARY, IMAGE SENSOR INCLUDING THE SAME, AND METHOD OF DRIVING THE SAME - Disclosed are a pixel array, an image sensor including the same, and a method of driving the same. In a WDR (Wide Dynamic Range) pixel employing a storage region (FD node) including a varactor, a reset voltage, which is less than a voltage applied to a reset transistor according to the related art, that is, a partial reset voltage is applied to the reset transistor to read out a reset signal level for a CDS (Correlated Double Sampling) operation, thereby adjusting the operating voltage range of the storage region. The operating voltage range of the storage region is shifted into a range suitable for remarkably varying the capacitance of the varactor, thereby expanding the dynamic range. | 05-01-2014 |
20140117207 | CONTINUOUS AND REAL-TIME CALIBRATION OF FIBER-BASED MICROSCOPIC IMAGES - According to a first aspect, the invention relates to a method for processing images acquired by means image detectors with non-uniform transfer functions and irregular spatial locations, comprising: accumulating data from multiple images; defining an affinity graph linking individual detectors that measure related signal; performing statistical analysis on the accumulated data from the linked detectors; and solving a system constructed from the results of the statistical analysis to estimate each detector transfer function, the set of which compose a calibration of an imaging system. | 05-01-2014 |
20140117208 | LIGHT GUIDE ARRAY FOR AN IMAGE SENSOR - An image sensor pixel that includes a photoelectric conversion unit supported by a substrate and an insulator adjacent to the substrate. The pixel includes a cascaded light guide that is located within an opening of the insulator and extends above the insulator such that a portion of the cascaded light guide has an air interface. The air interface improves the internal reflection of the cascaded light guide. The cascaded light guide may include a self-aligned color filter having air-gaps between adjacent color filters. These characteristics of the light guide eliminate the need for a microlens. Additionally, an anti-reflection stack is interposed between the substrate and the light guide to reduce backward reflection from the image sensor. Two pixels of having different color filters may have a difference in the thickness of an anti-reflection film within the anti-reflection stack. | 05-01-2014 |
20140117209 | CMOS IMAGE SENSOR WITH SHARED SENSING NODE - A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixels includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line. | 05-01-2014 |
20140117210 | IMAGE PICKUP CIRCUIT, CMOS SENSOR, AND IMAGE PICKUP DEVICE - Disclosed herein is an image pickup circuit including: amplifying means for amplifying a charge corresponding to an amount of light received by a photodetector, and outputting a pixel signal; ramp signal generating means for generating a ramp signal whose voltage drops with a fixed slope from a predetermined initial voltage; and comparing means for comparing the pixel signal output by the amplifying means with the ramp signal output by the ramp signal generating means. A reference potential of the pixel signal output by the amplifying means and a reference potential of the ramp signal output by the ramp signal generating means are at a same level. | 05-01-2014 |
20140117211 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus includes a pixel array, a first color filter, a second color filter, and a light shielding portion. The amount of electric charges generated in a first pixel after light of a first wavelength enters the first pixel is larger than that of electric charges generated in a second pixel after light of a second wavelength enters the second pixel. The light shielding portion defines the aperture regions of the first and second pixels so as to set the aperture area of the first pixel larger than that of the second pixel. | 05-01-2014 |
20140124648 | ULTRA LOW READOUT NOISE ARCHITECTURE - A method to read out pixels includes reading a first pixel by resetting a first photodetector, integrating the first photodetector after resetting the first photodetector, resetting a first floating diffusion node coupled to the first photodetector and a second floating diffusion node coupled to a second photodetector, transferring charge from the first photodetector to the first floating diffusion node, comparing a first signal at the first floating diffusion node and a second signal at the second floating diffusion node and generating a first signal to latch a first counter value when the first signal is less than the second signal, incrementing the first signal and decrementing the second signal, and comparing the first signal and the second signal and generating a second signal to latch a second counter value when the first signal is greater than the second signal, wherein the difference between the second counter value and the first counter value indicates a first pixel level. | 05-08-2014 |
20140124649 | OFF-AXIAL THREE-MIRROR SYSTEM - An off-axial three-mirror system includes a primary mirror, a secondary mirror, a tertiary mirror, and an image sensor. The secondary mirror is located on a reflective optical path of the primary mirror. The tertiary mirror is located on a reflective optical path of the secondary mirror. The image sensor is located on a reflecting optical path of the tertiary mirror. The primary mirror and the tertiary mirror are formed as one piece. The surface type of both the primary mirror and the tertiary mirror is a freeform surface. The primary mirror is a convex mirror, and the tertiary mirror is a concave mirror. | 05-08-2014 |
20140124650 | IMAGING DEVICE - The imaging device disclosed herein includes: a plurality of photodetection sections | 05-08-2014 |
20140124651 | COMPARATOR, COMPARISON METHOD, AD CONVERTER, SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - A comparator compares a pixel signal from a pixel with a reference signal an offset level of which is changed in a stepwise manner and performs auto zero to set the pixel signal at the offset level of the reference signal in accordance with one of a plurality of auto zero signals having different timings for instructing the auto zero. | 05-08-2014 |
20140124652 | PIXEL CIRCUIT WITH CONTROLLED CAPACITOR DISCHARGE TIME OF FLIGHT MEASUREMENT - A pixel circuit includes a single photon avalanche diode (SPAD) and a measurement circuit including a capacitance. The SPAD detects an incident photon and the measurement circuit discharges the capacitance at a known rate during a discharge time period. The length of the discharge time period is determined by the time of detection of the photon, such that the final amount of charge on the capacitance corresponds to the time of flight of the photon. The pixel circuit may be included in a time resolved imaging apparatus. A method of measuring the time of flight of a photon includes responding to an incident photon detection by discharging a capacitance at a known rate and correlating final capacitance charge to time of flight. | 05-08-2014 |
20140124653 | PIXEL CIRCUIT WITH CAPACITOR DISCHARGE INDICATIVE OF NUMBER OF EVENTS - A pixel circuit includes a single photon avalanche diode (SPAD) and a measurement circuit including a capacitance. The circuit is operable to discharge a known portion of the charge on the capacitance upon each detection of a SPAD event within a time period, such that the charge remaining on the capacitance at the end of the time period corresponds to the number of SPAD events detected within the time period. A time resolved imaging apparatus includes an array of such pixel circuits. A method of counting photon detection includes sensing photons with a SPAD device and discharging a known portion of the charge on a capacitance upon each detection of a SPAD event within a time period. | 05-08-2014 |
20140124654 | SOLID-STATE IMAGING DEVICE - As a reset transistor is turned on, an FD (Floating Diffusion) is reset to VDD and then stores charges transferred from a light receiving element. By a source-follower circuit formed by an amplifying transistor, a selection transistor and a current source, a voltage in accordance with a potential of FD is output to a data line. A second output circuit generates an output voltage VOUT in accordance with the potential of FD at an output node. Output transistors in output circuit are configured to generate a potential difference equivalent to the potential difference between FD and data line caused by the amplifying transistor and selection transistor, between data line and output node. | 05-08-2014 |
20140124655 | UV LED LIGHTBAR FOR SETTING A UV-CURABLE NAIL FORMULATION - Various systems and methods for implementing a UV LED lightbar for setting a UV-curable nail formulation are described herein. A lightbar comprises a detachable UV lightbar comprising a plurality of UV lights with at least two of the plurality of UV lights having different UV light output; and a connector for connection to a power supply, where the detachable UV lightbar is controlled by a controller connectably attachable to the connector, the controller configured to control the plurality of UV lights in a manner to cure a nail gel preparation. A method for curing a nail gel preparation comprises identifying by a processing device, the nail gel preparation; and configuring an UV light assembly to cure the nail gel preparation. | 05-08-2014 |
20140131552 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE SENSOR - To provide a small-area photoelectric conversion device without impairing a resolution switching function, signals for controlling output order control switches provided so as to correspond to photoelectric conversion elements are selected by an output order control circuit and a shift register. In this manner, the number of flip-flops forming a shift register is reduced. | 05-15-2014 |
20140131553 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to an embodiment includes: an imaging element including an imaging area formed with a plurality of pixel blocks each including pixels; a first optical system forming an image of an object on an imaging surface; and a second optical system re-forming the image, which has been formed on the imaging surface, on the pixel blocks corresponding to microlenses, the second optical system including a microlens array formed with the microlenses provided in accordance with the pixel blocks. The microlenses are arranged in such a manner that an angle θ between a straight line connecting center points of adjacent microlenses and one of a row direction and a column direction in which the pixels are aligned is expressed as follows: θ>sin | 05-15-2014 |
20140131554 | SOLID-STATE IMAGING DEVICE AND SWITCHING CIRCUIT - A solid-state imaging device includes: a photoelectric conversion unit which converts light into signal charges; an accumulation unit which accumulates the signal charges; a transfer transistor connected between the photoelectric conversion unit and the accumulation unit for transferring to the accumulation unit, the signal charges obtained through the conversion by the photoelectric conversion unit; an amplification transistor for amplifying the signal charges accumulated in the accumulation unit to generate a voltage signal, the amplification transistor having a gate connected to the accumulation unit; a reset transistor for resetting a voltage of the accumulation unit; a first amplification circuit for negatively feeding back the voltage signal generated by the amplification transistor to the reset transistor; and a second amplification circuit for positively feeding back the voltage signal generated by the amplification transistor to the amplification transistor. | 05-15-2014 |
20140138520 | Dual-Side Illumination Image Sensor Chips and Methods for Forming the Same - A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction. | 05-22-2014 |
20140138521 | Dual-Side Illumination Image Sensor Chips and Methods for Forming the Same - A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction. | 05-22-2014 |
20140138522 | PHOTOELECTRIC CONVERSION DEVICE VAPOR DEPOSITION MATERIAL, PHOTOELECTRIC CONVERSION DEVICE, SENSOR, AND IMAGING DEVICE - In the photoelectric conversion device having a pair of electrodes and a light receiving layer sandwiched between the pair of electrodes and including at least a photoelectric conversion layer, at least a part of the light receiving layer includes a fullerene or a fullerene derivative deposited using a vapor deposition material of a plurality of particles or a compact formed of the particles consisting primarily of the fullerene or fullerene derivative with an average particle size expressed as D50% of 50 to 300 μm. | 05-22-2014 |
20140138523 | SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, AND LENS ARRAY - A solid-state imaging device includes: multiple micro lenses, which are disposed in each of a first direction and a second direction orthogonal to the first direction, focus the incident light into the light-receiving surface; with the multiple micro lenses of which the planar shape is a shape including a portion divided by a side extending in the first direction and a side extending in the second direction being disposed arrayed mutually adjacent to each of the first direction and the second direction; and with the multiple micro lenses being formed so that the depth of a groove between micro lenses arrayed in a third direction is deeper than the depth of a groove between micro lenses arrayed in the first direction, and also the curvature of the lens surface in the third direction is higher than the curvature of the lens surface in the first direction. | 05-22-2014 |
20140145067 | IMAGE SENSOR AND SYSTEM INCLUDING THE SAME - An image sensor includes a first column pair and a second column pair among a plurality of columns of a pixel array, an analog-to-digital converter pair, and a switch arrangement circuit configured to connect the first column pair with the analog-to-digital converter pair in response to first switch control signals such that two rows among a plurality of rows in the pixel array are read during a single access time. | 05-29-2014 |
20140145068 | PIXEL ARRAY - A pixel array for imaging comprises an array of pixels of a first pixel type and a second pixel type. Each pixel of the first pixel type comprises a first photo-sensitive element having a first area. Each pixel of the second pixel type comprises a second photo-sensitive element and a third photo-sensitive element. The second photo-sensitive element has a second area, which is smaller than the first area. Only the second photo-sensitive element in the pixel of the second pixel type is connected to a readout circuit. The third photo-sensitive element is connected to a charge drain via a permanent connection or a switchable connection. Outputs of the second photo-sensitive elements can be used to perform phase detect autofocussing. | 05-29-2014 |
20140151530 | IMAGE SENSORS FOR PERFORMING THERMAL RESET, METHODS THEREOF, AND DEVICES INCLUDING THE SAME - A method of operating an image sensor includes: thermoelectrically cooling a pixel using a thermoelectric element having a thermoelectric-junction integrated to the pixel; and performing a photoelectric conversion operation using the thermoelectric element. An image sensor includes a pixel and a readout circuit. The pixel includes a thermoelectric element having a thermoelectric-junction, and the readout circuit is configured to control the pixel such that the thermoelectric element performs a thermoelectric-cooling operation and a photoelectric conversion operation. | 06-05-2014 |
20140151531 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF DRIVING THE SAME - Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch. | 06-05-2014 |
20140151532 | SOLID-STATE IMAGING DEVICE, AND ELECTRONIC SYSTEM - A solid-state imaging device includes: a pixel array including a plurality of pixels disposed in a matrix, the pixels including a charge holding section configured to hold a signal charge transferred from a photoelectric conversion section, and to include a capacitor section having a first capacitance value and an additional capacitor section for increasing the first capacitance value to be a second capacitance value; and to part of a reset transistor configured to reset a charge held by the charge holding section, a test-voltage power source configured to apply a test voltage having a voltage different from a drive voltage of the reset transistor. | 06-05-2014 |
20140151533 | SOLID-STATE IMAGING DEVICE, DRIVE METHOD THEREOF AND ELECTRONIC APPARATUS - A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes. | 06-05-2014 |
20140151534 | IMAGE SENSOR INCLUDING DATA TRANSMISSION CIRCUIT HAVING SPLIT BUS SEGMENTS - A data transmission circuit of an image sensor includes first to Kth bus segments, and first to Kth data regeneration circuits respectively connected to the first to Kth bus segments and the first to (K-1)th data regeneration circuits respectively connected to the second to Kth bus segments. Each of the first to Kth data regeneration circuits may be embodied as one of a buffer, a logic gate, and a synchronous circuit operating in response to a clock signal. | 06-05-2014 |
20140158862 | Micro-Image Acquisition and Transmission System - A micro-image acquisition and transmission system is provided. In a preferred embodiment, the system is comprised of an image acquisition chip comprising an electronic imager, control electronics and a micro powered rotary stage comprising a transceiver array that acts as a hub to optically link a group of distributed image acquisition chips. A preferred embodiment is further comprised of a transceiver array chip comprising one or more micro-powered rotary stages having a transceiver array assembly disposed thereon. The micro-powered rotary stage is supported by a micro-brush bearing. | 06-12-2014 |
20140158863 | High Fill-Factor Image Sensor Architecture - An image sensor architecture is implemented within an image sensor system. Image sensor pixels include pixel regions, and each pixel region includes a photosensor, a reset circuit, and a readout circuit. The readout circuit receives enable signals from an enable signal line, and outputs a pixel signal representative of light captured by the photosensor on a combination input/output line. The reset circuit resets the photosensor in response to receiving a first reset signal on a reset line and a second reset signal on the combination input/output line. | 06-12-2014 |
20140158864 | Method And Apparatus For High Speed Acquisition Of Moving Images Using Pulsed Illumination - A method of operating an image sensor with a continuously moving object is described. In this method, a timed delay integration mode (TDI-mode) operation can be performed during an extended-time illumination pulse. During this TDI-mode operation, charges stored by pixels of the image sensor are shifted only in a first direction, and track the image motion. Notably, a split-readout operation is performed only during non-illumination. During this split-readout operation, first charges stored by first pixels of the image sensor are shifted in the first direction and second charges stored by second pixels of the image sensor are concurrently shifted in a second direction, the second direction being opposite to the first direction. | 06-12-2014 |
20140158865 | MICROSCOPY INSTRUMENTS WITH DETECTOR ARRAYS AND BEAM SPLITTING SYSTEM - Microscopy instruments with detectors located on one side of the instruments are disclosed. The microscopy instruments include a splitting system and an array of detectors disposed on one side of the instrument. A beam composed of two or more separate emission channels is separated by the splitting system into two or more beams that travel along separate paths so that each beam reaches a different detector in the array of detectors. Each beam is a different emission channel and the beams are substantially parallel. | 06-12-2014 |
20140166854 | METHODS AND APPARATUS FOR PASSIVE COVERT LOCATION DETECTION AND IDENTIFICATION - Methods and apparatus for covert detection of an interrogating device. In one example a method includes receiving an interrogation beam at an optical system, imaging a scene including a source of the interrogation beam without retro-reflecting the interrogation beam to produce an image, and analyzing the image to determine an approximate location of the source within the scene. In some examples, a threat detection sensor is used to further analyze the interrogation beam to determine information about the interrogating device. | 06-19-2014 |
20140166855 | IMAGE ACQUISITION APPARATUS AND MICROSCOPE SYSTEM - This image acquisition apparatus is provided with an imaging device that can output acquired image signals from a plurality of output portions; a timing generator that drives the output portions of the imaging device; and a system control portion that acquires observation conditions, wherein, based on the observation conditions acquired by the system control portion, the timing generator switches between parallel outputting of the image signals from the plurality of output portions of the imaging device and single outputting of the image signal from any one of the output portions. | 06-19-2014 |
20140166856 | DA CONVERTER, SOLID-STATE IMAGING DEVICE, DRIVING METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Disclosed is a digital-analog converter including a current generation section, a current source transistor bias voltage keeping section, a cascade transistor group switch section, and a conversion section. The current generation section has at least one current source transistor group including a plurality of current source transistors and generates an output current based on a value of a digital input signal. The current source transistor bias voltage keeping section has a plurality of cascade transistor groups each including cascade transistors connected in series to the current source transistors and keeps bias voltages of the current source transistors constant. The cascade transistor group switch section selects one of the plurality of cascade transistor groups. The conversion section performs current-voltage conversion of the output current supplied via the selected cascade transistor group. | 06-19-2014 |
20140166857 | ANALOG-DIGITAL CONVERTER, SOLID-STATE IMAGE SENSOR, AND ELECTRONIC APPARATUS - An analog-digital converter includes: a first comparator configured to make a comparison between a pixel voltage and a first reference voltage, the pixel voltage being a signal voltage outputted from a pixel including an photoelectric conversion element, the pixel voltage corresponding to electric charge generated by the photoelectric conversion element; a second comparator configured to make a comparison between the pixel voltage and a second reference voltage; and a voltage follower configured to connect an input terminal for the first reference voltage of the first comparator and an input terminal for the second reference voltage of the second comparator through a switch. | 06-19-2014 |
20140166858 | Methods of Operating Depth Pixel Included in Three-Dimensional Image Sensor and Methods of Operating Three-Dimensional Image Sensor - In a method of operating a depth pixel included in a three-dimensional (3D) image sensor, a plurality of sampling values are obtained by sampling a reception light reflected by an object based on a transfer control signal having a first initial activation level. The depth pixel includes a photo detection region, a transfer gate and a floating diffusion region. The transfer control signal is applied to the transfer gate. A first final activation level of the transfer control signal is determined based on the plurality of sampling values and at least one reference value. A distance between the depth pixel and the object is calculated based on the reception light and the transfer control signal having the first final activation level. | 06-19-2014 |
20140166859 | CIRCUIT AND METHOD FOR MEASURING AN AMBIENT LIGHT LEVEL - A device includes an image sensor and a circuit for controlling the sensor. The control circuit is configured control the device in a first operating mode and second operating mode. In the first operating mode images acquired by the sensor are output. In the second operating mode, no images are provided, but a selected subassembly of pixels of the image sensor are read and image data therefrom is processed to provide an ambient luminosity value. | 06-19-2014 |
20140166860 | SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD THEREOF, MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS, AND ELECTRONIC INFORMATION DEVICE - A solid-state imaging apparatus | 06-19-2014 |
20140175263 | METHOD FOR DRIVING IMAGE PICKUP DEVICE, METHOD FOR CORRECTING DIGITAL SIGNAL, IMAGE PICKUP DEVICE, METHOD FOR DRIVING IMAGE CAPTURING SYSTEM, AND IMAGE CAPTURING SYSTEM - There are provided a method for driving an image pickup device, a method for correcting a digital signal, an image pickup device, a method for driving an image capturing system, and an image capturing system. Digital signals are generated on the basis of a potential at an input node of a comparison unit by using a first reference signal whose potential changes by a first amount per unit time and a second reference signal whose potential changes by a second amount per unit time, the second amount being greater than the first amount. A correction value based on a difference in signal value between the digital signals is derived. A digital signal based on a pixel signal is corrected on the basis of the derived correction value. | 06-26-2014 |
20140175264 | Pixel Structure and Reset Scheme - An image sensor that includes a pixel array with image pixels with conditional reset circuitry. The pixels can be reset by a combination of row select and column reset signals, which implements the reset function while minimizing the number of extra signal lines. The pixels may also include pinned photodiodes. The manner in which the pinned photodiodes are used reduces noise and allows the quantization of the pixel circuits to be programmable. | 06-26-2014 |
20140175265 | Spectral Imaging Device and Method to Calibrate the Same - A solid-state spectral imaging device is described. The device includes an image sensor and a plurality of optical filters directly processed on top of the image sensor. Each optical filter includes a first mirror and a second mirror defining an optical filter cavity having a fixed height. Each optical filter also includes a first electrode and a second electrode having a fixed position located opposite to each other and positioned to measure the height of the optical filter cavity. Further, a method to calibrate spectral data of light and a computer program for calibrating light is described. | 06-26-2014 |
20140183332 | Imager with Column Readout | 07-03-2014 |
20140183333 | CONVERSION CIRCUITRY FOR REDUCING PIXEL ARRAY READOUT TIME - An image sensor includes a pixel array having pixels arranged in rows and columns, a first successive-approximation-register (“SAR”) analog-to-digital-converter (“ADC”), a second SAR ADC, and first and second control circuitry. The first SAR ADC includes a first capacitor array (“FCA”) that shares a first common terminal coupled to a first comparator and coupled to receive first analog pixel signals. The second SAR ADC includes a second capacitor array (“SCA”) that shares a second common terminal selectably coupled to a second comparator and coupled to receive second analog pixel signals. The first and second control modules are coupled to selectably switch bottom plates of the FCA from a low reference voltage to the high reference voltage at a same time as selectably switching bottom plates of the SCA from a high reference voltage to the low reference voltage. | 07-03-2014 |
20140183334 | IMAGE SENSOR FOR LIGHT FIELD DEVICE AND MANUFACTURING METHOD THEREOF - An image sensor for light field devices includes a plurality of sub-microlenses, a space layer, and a plurality of main microlenses. The space layer is disposed on the sub-microlenses, and the main microlenses are disposed on the space layer. The diameter of each of the main microlenses exceeds that of each of the sub-microlenses. | 07-03-2014 |
20140183335 | A/D CONVERSION CIRCUIT AND SOLID-STATE IMAGING DEVICE - In an A/D conversion circuit and a solid-state imaging device, a latch circuit is in a disable state until a first timing at which an output signal of a comparison unit has been inverted, and is in an enable state until a second timing at which a delay time of the inversion delay circuit has passed from the first timing. The latch circuit is in the enable state until the second timing according to comparison start in the comparison unit. The latch circuit latches an output signal of a delay unit at the second timing. A determination unit determines whether the latch circuit accurately latches the output signal of the delay unit, and outputs a signal indicating a determination result to a delay controller. The delay controller controls the delay time of the inversion delay circuit based on the determination result. | 07-03-2014 |
20140183336 | REFERENCE SIGNAL GENERATING CIRCUIT, AD CONVERSION CIRCUIT, AND IMAGING DEVICE - A reference signal generating circuit, an AD conversion circuit, and an imaging device are provided. A clock generating unit includes a delay section including delay units, each of which delays an input signal and outputs a delayed signal, and outputs a low-order phase signal based on a signal output from the delay section. A high-order current source cell unit includes high-order current source cells, each of which generates the same constant current. A low-order current source cell unit includes low-order current source cells weighted to generate constant currents having current values that differ by a predetermined proportion of a current value of the constant current generated by the high-order current source cell. Selection of the high-order current source cell is performed based on a clock obtained by dividing a clock based on the low-order phase signal. | 07-03-2014 |
20140183337 | MULTI SCENE DEPTH PHOTO SENSITIVE DEVICE, SYSTEM THEREOF, SCENE DEPTH EXPANDING METHOD, AND OPTICAL IMAGING SYSTEM - The present invention relates to a multi-depth-of-field light-sensing device, a system, a depth of field extension method, and an optical imaging system. The multi-depth-of-field light-sensing device includes at least two light-sensing pixel layers capable of inducing a light source, where the at least two light-sensing pixel layers are arranged at an interval of a preset distance, so that different light signals from a lens at a specific distance from the light-sensing device are focused to the different light-sensing pixel layers. The multi-depth-of-field light-sensing device of the present invention can implement automatic focusing without using any electrically operated mechanism or complex and precise mechanical component, and have good depth of field extension performance. | 07-03-2014 |
20140183338 | DEPTH PIXEL OF THREE-DIMENSIONAL IMAGE SENSOR AND THREE-DIMENSIONAL IMAGE SENSOR INCLUDING THE SAME - A depth pixel includes a photo detection unit, an ambient light removal current source, a driving transistor and a select transistor. The photo detection unit is configured to generate a light current based on a received light reflected from a subject, the received light including an ambient light component. The ambient light removal current source configured to generate a compensation current indicating the ambient light component in response to a power supply and at least one compensation control signal. The driving transistor is configured to amplify an effective voltage corresponding to the light current and the compensation current. The select transistor configured to output the amplified effective voltage in response to a selection signal, the amplified effective voltage indicating a depth of the subject. | 07-03-2014 |
20140191111 | ACCUMULATING OPTICAL DETECTOR WITH SHUTTER EMULATION - An optical detector is disclosed, having a plurality of detector cells, each detector cell comprising a light sensor, a charge accumulator, and a switch interposed between the light sensor and the charge accumulator; wherein the light sensor produces electrical current when illuminated by electromagnetic radiation, the charge accumulator accumulate electric charge when receiving the electrical current generated by the light sensor, and the switch is configured to controllably electrically isolate or connect the charge accumulator to light sensor, such that the charge accumulator accumulates charge only when electrically connected by the switch to the light sensor. | 07-10-2014 |
20140191112 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a pixel unit which has a plurality of pixels disposed in a two-dimensional matrix shape, wherein each of the pixels that a photoelectrical conversion element which generates a photoelectrical conversion signal corresponding to an amount of incident light disposed on a first substrate, and which outputs a photoelectrical conversion signal generated by each of the pixels to each row as a pixel signal, and an analog-to-digital converter which is disposed on every one or more columns of the pixel unit and generates a digital signal by digitizing a phase state of a multi-phase clock including clock signals of a plurality of phases different from each other at predetermined fixed intervals according to the pixel signal. Each of first and second circuit configuration units whose circuit scales are determined according to the multi-phase clock is disposed on a different substrate of a first or second substrate. | 07-10-2014 |
20140191113 | SYSTEM AND METHOD FOR COLOR IMAGING WITH INTEGRATED PLASMONIC COLOR FILTERS - A device for color imaging including an optical sensor having light sensitive pixels with a metal film disposed over the light sensitive pixels. The metal film has a group of nano-holes arranged over the pixels according to a periodic lattice formation and is configured to pass light of a preselected first range of wavelengths. The group of nano-holes arranged over an adjoining group of pixels is configured to pass light having ranges of wavelengths different from the first range of wavelengths. | 07-10-2014 |
20140197301 | GLOBAL SHUTTER IMAGE SENSORS WITH LIGHT GUIDE AND LIGHT SHIELD STRUCTURES - An image sensor operable in global shutter mode may include an array of image pixels. Each image pixel may include a photodiode for detecting incoming light and a separate storage diode for temporarily storing charge. To maximize the efficiency of the image pixel array, image pixels may include light guide structures and light shield structures. The light guide structures may be used to funnel light away from the storage node and into the photodiode, while the light shield structures may be formed over storage nodes to block light from entering the storage nodes. The light guide structures may fill cone-shaped cavities in a dielectric layer, or the light guide structures may form sidewalls having a ring-shaped horizontal cross section. Metal interconnect structures in the dielectric layer may be arranged in concentric annular structures to form a near-field diffractive element that funnels light towards the appropriate photodiode. | 07-17-2014 |
20140197302 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor comprising a pixel array having a plurality of pixels, and a plurality of signal processing circuits each of which amplifies a signal of the pixel array, wherein each of the plurality of signal processing circuits comprises an operation amplifier having an input terminal and an output terminal, an input capacitance arranged between the input terminal and the column signal line, and a feedback circuit which connects the input terminal with the output terminal, wherein the feedback circuit is configured to form a feedback path in which a first and a second capacitance elements are arranged in series in a path connecting the input terminal to the output terminal, and a third capacitance element is arranged between a reference potential and a path connecting the first capacitance element to the second capacitance element. | 07-17-2014 |
20140197303 | FOCAL PLANE ARRAY PROCESSING METHOD AND APPARATUS - A digital focal plane array includes an all-digital readout integrated circuit in combination with a detector array. The readout circuit includes unit cell electronics, orthogonal transfer structures, and data handling structures. The unit cell electronics include an analog to digital converter. Orthogonal transfer structures enable the orthogonal transfer of data among the unit cells. Data handling structures may be configured to operate the digital focal plane array as a data encryptor/decipherer. Data encrypted and deciphered by the digital focal plane array need not be image data. | 07-17-2014 |
20140197304 | FOCUS MODULE AND COMPONENTS WITH ACTUATOR - A focus module contains a boundary element and a focus element. The focus element includes a fluid and a deformable membrane, with the fluid being entrapped between the boundary element and the deformable membrane. The focus module also includes a pressure element, which is capable of deforming the focus element by pressing on the deformable membrane in the direction of the boundary element. | 07-17-2014 |
20140203168 | Contact State Detection Apparatus - A contact state detection apparatus which can accurately detect the pressed state of a contact body such as a probe against an object without damaging the contact body or the object includes a contact body approach section, a probe light source, an imaging device, and a computer unit. The contact body approach section holds a contact body in an inclined attitude with respect to a target contact surface of an object, and displaces the contact body toward the object. The probe light source irradiates light toward the contact body which is being displaced toward the object. The imaging device captures an image of the illuminated contact body and outputs contact body captured image information to the computer unit. The computer unit detects the state of the contact body being pressed against the object based on a change in the contact body captured image information. | 07-24-2014 |
20140203169 | Flat-Field Imaging System and Methods of Use - A method of aligning a plurality of targets is provided. The method includes generating a plurality of targets. A third phase includes the plurality of targets. The method further includes combining a first phase, a second phase, and the third phase in a volume. The first phase, the second phase, and the third phase are substantially immiscible, and the third phase is in fluid communication with the first phase and the second phase, and the first phase, the second phase, and the third phase are operable to be in a configuration of the third phase between the first phase and the second phase in the volume. | 07-24-2014 |
20140203170 | IMAGING SYSTEM - An imaging system includes: an illumination unit configured to emit illumination light for illuminating a subject; a light receiving unit in which pixels are arranged two-dimensionally, each pixel being configured to receive light and generate an electric signal by performing photoelectric conversion of the light; a readout unit configured to sequentially read out the electric signal from the light receiving unit for every horizontal line; and an illumination controller configured to keep intensity of the illumination light emitted from the illumination unit constant in at least a part of a readout period where the readout unit reads out the horizontal line of the light receiving unit in one frame or one field period, and configured to variably control an illumination time of the illumination light emitted from the illumination unit, outside the readout period. | 07-24-2014 |
20140203171 | PHOTOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREFOR - A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection. | 07-24-2014 |
20140209784 | IMAGE SENSING APPARATUS, DRIVING METHOD THEREFOR, AND IMAGE SENSING SYSTEM - An image sensing apparatus comprising, a pixel array in which a plurality of pixels are arranged, a first A/D converter configured to perform first analog-to-digital conversion for a signal from the pixel array, a second A/D converter configured to perform second analog-to-digital conversion for the signal from the pixel array in parallel with the first analog-to-digital conversion by the first A/D converter, a first output unit configured to output one of a first result obtained by the first analog-to-digital conversion performed by the first A/D converter and a second result obtained by the second analog-to-digital conversion performed by the second A/D converter, and a second output unit configured to output information indicating which of the first result and the second result has been output from the first output unit. | 07-31-2014 |
20140209785 | Image Capture Device with Shared Image Sensing Element - An image capture device includes a plurality of focus driving elements, a plurality of lenses, and an image sensing element. The lenses are respectively driven by the focusing driving elements to perform focus operation. The image sensing element selectively receives an image through one of the lenses. | 07-31-2014 |
20140209786 | Image Pickup Lens And Image Pickup Device - The present invention provides a compact and high-performance image pickup lens having a fast F-number and capable of suppressing shading by using a curved projection surface. An image pickup lens | 07-31-2014 |
20140217263 | IMAGE SENSOR CONFIGURED TO REDUCE BLOOMING DURING IDLE PERIOD - Among other things, techniques and systems are provided for identifying when a pixel of an image sensor is in an idle period. A flag is utilized to differentiate when the pixel is in an idle period and when the pixel is in an integration period. When the flag indicates that the pixel is in an idle period, a blooming operation is performed on the pixel to reduce an amount of electrical charge that has accumulated at the pixel or to mitigate electrical charge from accumulating at the pixel. In this way, the blooming operation reduces a probability that the photosensitive sensor becomes saturated during an idle period of the pixel, and thus reduces the likelihood of electrical charge from a pixel that is not intended contribute to an image from spilling over and potentially contaminating a pixel that is intended to contribute to the image. | 08-07-2014 |
20140217264 | SYSTEMS AND METHODS FOR IMAGING USING SINGLE PHOTON AVALANCHE DIODES - Single-photon avalanche diode includes a central junction having a central p+ area and a deep-n well in contact with the central p+ area, a p-type guard ring disposed between the central junction and the deep-n well, and a shallow trench isolation separated from the central p+ area. Imaging apparatus includes a plurality of pixels, each pixel comprising a complementary metal-oxide-semiconductor-implemented single photon avalanche device and one or more signal converters electrically coupled thereto and configured to detect changes in output therefrom. | 08-07-2014 |
20140217265 | CMOS SENSOR ARRAY - A CMOS sensor includes a pixel configured to output a voltage based on incident light received by the pixel. Circuitry is coupled to the pixel and is configured to determine a reset voltage of the pixel and to select a gain level based on the reset voltage of the pixel. A gain circuit is coupled to the circuitry and is configured to set a voltage level of the gain selected by the circuitry. | 08-07-2014 |
20140231620 | IMAGE SENSOR AND IMAGING METHOD WITH SINGLE SHOT COMPRESSED SENSING - A CMOS image sensor includes a plurality of pixel elements arranged in a two-dimensional array, analog signal multiplexers, over-sampling A/D converters and an activation code generator. The sensor is configured to construct an image by using less number of A/D conversions, thereby reducing the power consumption of the sensor. The activation code generator generates a bit stream of random binary sequences which determine which A/D converter is activated. The image sensor offers digitally compressed data, the number of which is significantly less than the total number of pixels. Further, the image sensor not only reduces the power consumption of the A/D converters (by reducing the number of A/D conversions) but also reduces the I/O power consumption. An original image focused on the sensor is recovered from the compressed data by using principles of compressed sensing. | 08-21-2014 |
20140231621 | IMAGE SENSOR AND COLOR FILTER ARRAY INCLUDING MULTIPLE SELECTABLE MESHED FILTER SETS - An apparatus including a pixel array including a plurality of pixels and a filter array positioned over the pixel array, the color filter array comprising a plurality of tiled minimal repeating units, each minimal repeating unit including a plurality of enmeshed filter sets, each filter set including a different set of colors than any other filter set in the filter array. Other embodiments are disclosed and claimed. | 08-21-2014 |
20140231622 | CIRCUIT STRUCTURE FOR PROVIDING CONVERSION GAIN OF A PIXEL ARRAY - Techniques and mechanisms for a pixel array to provide a level of conversion gain. In an embodiment, the pixel array includes conversion gain control circuitry to be selectively configured at different times for different operational modes, each mode for implementing a respective conversion gain. The conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—a supply voltage. In another embodiment, the conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—sample and hold circuitry. | 08-21-2014 |
20140231623 | LOW-MISMATCH AND LOW-CONSUMPTION TRANSIMPEDANCE GAIN CIRCUIT FOR TEMPORALLY DIFFERENTIATING PHOTO-SENSING SYSTEMS IN DYNAMIC VISION SENSORS - The invention relates to a low-mismatch and low-consumption transimpedance gain circuit for temporally differentiating photo-sensing systems in dynamic vision sensors, which uses at least one photodiode and at least two in-series transistors, each of the transistors being connected in diode configuration and being positioned at the output of the photodiode. The output current from the photodiode flows through the drain-source channels of the transistors and the source of the last transistor in series is connected to a voltage selected from ground voltage, a constant voltage or a controlled voltage. | 08-21-2014 |
20140231624 | SEMICONDUCTOR INTEGRATED CIRCUIT AND IMAGING DEVICE - There is provided a semiconductor integrated circuit including at least one MOS transistor a source or drain of which is connected an output terminal, and a driver circuit configured to drive a back gate or a well of the MOS transistor in a manner that voltage swing is in a same phase as the output terminal. | 08-21-2014 |
20140231625 | OPTICAL SENSOR APPARATUS AND IMAGE SENSING APPARATUS INTEGRATING MULTIPLE FUNCTIONS - An optical sensor apparatus includes an infrared light generating device, N first detection devices, a second detection device and a processing circuit. In addition to detecting infrared light, the N first detection devices further detect N different visible wavelength ranges, respectively. The second detection device is optically shielded from visible light and arranged for detecting infrared light. In a first sensing mode, the processing circuit obtains color information according to N first detection signals generated by the N first detection devices and a reference signal generated by the second detection device. In a second sensing mode, the N first detection devices and the second detection device generate (N+1) second detection signals when the infrared light generating device is activated, and generate (N+1) third detection signals when the infrared light generating device is deactivated. The processing circuit recognizes gesture information according to the (N+1) second and the (N+1) third detection signals. | 08-21-2014 |
20140231626 | SYSTEM AND METHOD FOR DETECTING TARGET MATERIALS USING A VIS-NIR DETECTOR - The present disclosure provides systems and methods for determining the presence of a target material in a sample. In general terms, the system and method disclosed herein provide collecting interacted photons from a sample having a target material. The interacted photons are passed through a tunable filter to a VIS-NIR detector where the VIS-NIR detector generates a VIS-NIR hyperspectral image representative of the filtered interacted photons. The hyperspectral image of the filtered interacted photons is analyzed by comparing the hyperspectral image of the filtered interacted phtons to known hyperspectral images to identify the presence of a target material in a sample. The systems and methods disclosed herein provide easy identification of the presence of a target material in a sample. | 08-21-2014 |
20140239152 | IMAGE SENSOR WITH PIXEL UNITS HAVING MIRRORED TRANSISTOR LAYOUT - An image sensor includes a first pixel unit horizontally adjacent to a second pixel unit. Each pixel unit includes plurality of photodiodes and a shared floating diffusion region. A first pixel transistor region of the first pixel unit has a plurality of pixel transistors. A second pixel transistor region of the second pixel unit is horizontally adjacent to the first pixel transistor region and also has a plurality of pixel transistors. A transistor layout of the second pixel transistor region is a minor image of a transistor layout of the first pixel transistor region. | 08-28-2014 |
20140239153 | CORRELATED DOUBLE SAMPLING DEVICE AND IMAGE SENSOR - A CDS device of an image sensor having a pixel array includes first comparators, second comparators and third comparators. The first comparators are coupled to columns of the pixel array, and generate a positive amplified signal and a negative amplified signal by comparing the analog signal and a ramp signal. The second comparators are coupled to a first set of the first comparators coupled to first columns of the pixel array, and generate a first comparison signal enabled to a first logic level by comparing the positive amplified signal and the negative amplified signal. The third comparators are coupled to a second set of the first comparators coupled to second columns of the pixel array, and generate a second comparison signal enabled to a second logic level by comparing the positive amplified signal and the negative amplified signal. | 08-28-2014 |
20140239154 | HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF AMPLIFIER TRANSISTORS - A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell. | 08-28-2014 |
20140239155 | IMAGE SENSOR AND ELECTRONIC DEVICE - An image sensor includes a plurality of unit pixels formed as a semiconductor chip, each of which has a photoelectric converting unit, a charge holding unit that holds charges stored in the photoelectric converting unit, a charge-voltage converting unit that converts a charge transferred from the charge holding unit to a voltage, and light shielding films between which an opening is formed above the photoelectric converting unit. The plurality of unit pixels are placed in a matrix in a pixel array. The shapes of the light shielding films are varied depending on the position of the unit pixel in the pixel array. | 08-28-2014 |
20140239156 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE - A photoelectric conversion element comprises a photoelectric conversion section that includes: a pair of electrodes; and a photoelectric conversion layer disposed between the pair of electrodes, wherein the photoelectric conversion section further comprises between one of the pair of electrodes and the photoelectric conversion layer a first charge-blocking layer that restrains injection of charges from the one of the electrodes into the photoelectric conversion layer when a voltage is applied to the pair of electrodes, and the first charge-blocking layer comprises a plurality of layers. | 08-28-2014 |
20140239157 | BRIGHT SOURCE PROTECTION FOR LOW LIGHT IMAGING SENSORS - This invention relates to a low light imaging sensors and particularly image intensification and CMOS sensors. To overcome issues of dazzle and halo when operating in areas where the scene encompasses bright light sources, the invention provides material layers in contact with the detector material to spatially limit the generation or subsequent diffusion of electrons in said detector material. This allows the imaging sensor to perform as normal under bright conditions, maintaining the operator's scene awareness and spatial acuity. | 08-28-2014 |
20140239158 | PHOTOELECTRIC CONVERTER, PHOTOELECTRIC CONVERTER ARRAY AND IMAGING DEVICE - A photoelectric converter includes a first pn junction comprised of at least two semiconductor regions of different conductivity types, and a first field-effect transistor including a first source connected with one of the semiconductor regions, a first drain, a first insulated gate and a same conductivity type channel as that of the one of the semiconductor regions. The first drain is supplied with a second potential at which the first pn junction becomes zero-biased or reverse-biased relative to a potential of the other of the semiconductor regions. When the first source turns to a first potential and the one of the semiconductor regions becomes zero-biased or reverse-biased relative to the other semiconductor regions, the first pn junction is controlled not to be biased by a deep forward voltage by supplying a first gate potential to the first insulated gate, even when either of the semiconductor regions is exposed to light. | 08-28-2014 |
20140246561 | HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF PHOTODIODES WITH A SINGLE IMPLANT - A high dynamic range image sensor pixel includes a short integration photodiode and a long integration photodiode disposed in semiconductor material. The long integration photodiode has a light exposure area that is substantially larger than a light exposure area of the short integration photodiode. The light exposure area of the short integration photodiode has a first doping concentration from a first doping implantation. The light exposure area of the long integration photodiode includes at least one implanted portion having the first doping concentration from the first doping implantation. The light exposure area of the long integration photodiode further includes at least one non-implanted portion photomasked from the first doping implantation such that a combined doping concentration of the implanted and non-implanted portions of the light exposure area of the long integration photodiode is less than the first doping concentration of the light exposure area of the short integration photodiode. | 09-04-2014 |
20140246562 | Dual Reset Branch Analog-to-Digital Conversion - Methods and systems for analog-to-digital conversion using two side branches that may be operated with overlapped timing such that a sampling phase may be overlapped with a previous conversion phase. Some embodiments provide a method of successive approximation A/D converting, comprising sampling a first signal onto a first capacitor that is configured to selectively couple to an analog input of a comparator, sampling a second signal onto capacitors that are coupled to a second analog input of the comparator and configured for charge redistribution successive approximation A/D conversion; carrying out, based on the first signal and the second signal, a charge redistribution successive approximation A/D conversion using the capacitors; and while carrying out the charge redistribution successive approximation A/D conversion based on the first and second signals, sampling a third signal onto a third capacitor that is configured to selectively couple to the analog input of a comparator. | 09-04-2014 |
20140246563 | METHODS AND APPARATUS FOR CALIBRATION OF A SENSOR ASSOCIATED WITH AN ENDOSCOPE - Embodiments of the invention include an apparatus including an enclosure configured to receive an endoscope having an electromagnetic radiation sensor. The apparatus also includes an electromagnetic radiation source having at least a portion disposed within the enclosure. The electromagnetic radiation source is configured to emit electromagnetic radiation based on a calibration instruction. The electromagnetic radiation sensor is configured to receive at least a portion of the electromagnetic radiation when at least a portion of the endoscope is coupled to the enclosure. | 09-04-2014 |
20140246564 | PIXEL TO PIXEL CHARGE COPIER CIRCUIT APPARATUS, SYSTEMS, AND METHODS - Methods, apparatus and systems may operate to copy pixel charge, compensating for image subject shift within in an imaging array during exposure time of an imaging device. Activities may include transferring charge from one or more source pixels to one or more buffer pixels within the same pixel array, and copying the charge to destination pixels within the same pixel array prior to an end of the image integration time. Charge transfer may include transfer of charge from more than one array on a single die. Additional activities may include transferring charge from one or more source pixels to one or more destination pixels multiple times prior to the end of the image integration time. | 09-04-2014 |
20140246565 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion. | 09-04-2014 |
20140246566 | WAFER LEVEL LENS, PRODUCTION METHOD OF WAFER LEVEL LENS, AND IMAGING UNIT - A sufficient light-shielding property is obtained by a wafer level lens having at least one lens module having a substrate and a plurality of lenses formed on the substrate in which the wafer level lens has a black resist layer formed on the surface of the lens module or on the surface of the substrate and the black resist layer is formed with a pattern having an opening at a part intersecting the optical axis of the lens, and generation of defects such as ghosts, flares and the like due to a reflected light can be prevented and an increase in the production cost can be suppressed. | 09-04-2014 |
20140252201 | CHARGE TRANSFER IN IMAGE SENSORS - Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node. | 09-11-2014 |
20140252202 | COLUMN ANALOG-TO-DIGITAL CONVERTER FOR CMOS SENSOR - A system and method is disclosed for an imaging device and/or an analog to digital converter which converts an analog input signal to a digital data signal using a comparator which compares the analog input signal to a first ramped reference signal to determine an operating point and then uses the same comparator to compare the analog input signal to a second ramped reference signal multiple times about the determined operating point. | 09-11-2014 |
20140252203 | DRIVING CIRCUIT OF IMAGE SENSOR AND METHOD OF OPERATING THE SAME - A driving circuit of an image sensor is provided. The driving circuit can include a pixel array where pixel circuits receiving light and converting the received light into an electrical signal are arranged in columns, an analog-to-digital (ADC) block including a plurality of ADC circuits receiving an analog image signal from pixel circuits arranged in the same column and converting the received analog image signal into a digital signal, and an ADC controller outputting a global signal to control each operation of the ADC circuit. The ADC controller can allow the ADC circuits in the ADC block to operate separately according to at least two timings. | 09-11-2014 |
20140252204 | IMAGE SENSOR - An image sensor is provided. An image sensor can include a plurality of unit pixels. Each of the unit pixels can include a photoelectric converter as a light receiving element. In each unit pixel, a transport switching unit can transport charges in the photoelectric converter to a floating diffusion region, and a first switching unit can selectively connect the floating diffusion region to a first sensing line. A second switching unit can selectively connect the floating diffusion region to a second sensing line, and a first sensing part can be connected to the first sensing line, and a second sensing part can be connected to the second sensing line | 09-11-2014 |
20140252205 | RADIATION IMAGING SYSTEM, CONTROL APPARATUS, CONTROL METHOD, AND STORAGE MEDIUM - A radiation imaging system includes a radiation imaging apparatus including a radiation detection unit in which conversion elements configured to convert radiation into electric charges are arranged and a driving unit configured to drive the radiation detection unit, and a control apparatus configured to control the radiation imaging apparatus. The control apparatus includes: a determination unit configured to determine whether a remaining image sensing enable time acquired by subtracting an elapsed time from initialization of the radiation detection unit from an image sensing enable time for a radiation image in use of the radiation detection unit is not less than a threshold time; a control unit configured to change operating states of the radiation detection unit and the driving unit in accordance with the determination result; and an operation detection unit configured to detect an operation instruction for the control unit. | 09-11-2014 |
20140252206 | CONTROL APPARATUS, RADIATION IMAGING APPARATUS, RADIATION IMAGING SYSTEM, CONTROL METHOD OF RADIATION IMAGING APPARATUS, AND STORAGE MEDIUM - A control apparatus for a radiation sensor, including pixels each for obtaining electric charges, includes: a control unit configured to start driving for imaging in response to radiation irradiation, and stop the driving when a first time elapses after the start of the driving; and a receiving unit configured to externally receive a predetermined instruction signal. The control unit is configured to, in response to reception of the predetermined instruction signal, control a state of the radiation sensor based on a difference between the first time and a second time from the start of the driving to the reception of the predetermined instruction signal. | 09-11-2014 |
20140252207 | ANALOG-TO-DIGITAL CONVERTER AND SOLID-STATE IMAGING DEVICE - An ADC includes a comparator and first and second amplifier circuits including a fully-differential operational amplifier. The comparator converts an analog signal output from the operational amplifier into digital data. The first amplifier circuit stores charge corresponding to a signal having a phase reverse to an input signal in each of a pair of capacitors during a first period and transfers the charge in one of the pair of capacitors to the other via the operational amplifier during a second period to amplify the reversed phase signal twofold. The second amplifier circuit amplifies the input signal twofold similarly to the first amplifier circuit. | 09-11-2014 |
20140252208 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS HAVING THE SAME - A solid-state imaging device includes the following. Pixels arranged in matrix converts received light into signal voltage. A column AD conversion unit, which includes a comparison unit and an up-down counting unit, converts signal voltage to digital signal. The comparison unit compares a value of signal voltage to a gradually changing value of reference signal voltage. The up-down counting unit counts, by one of down-counting and up-counting, a time period until the comparison result is reversed if the signal voltage is of a base signal component of each pixel at reset level, and counts, by an other of down-counting and up-counting, the time period if the signal voltage is of a superimposed signal component in which the base signal component is superimposed on a pixel signal component corresponding to an amount of light received by the pixel. The comparison unit has switchable kinds of frequency band characteristics. | 09-11-2014 |
20140263950 | Single-Exposure High Dynamic Range CMOS Image Sensor Pixel With Internal Charge Amplifier - A single-exposure high dynamic range (HDR) image sensor utilizes a charge amplifier having two different charge-to-voltage conversion capacitors that read a single photodiode charge during a two-phase readout operation. The first capacitor has a lower capacitance and therefore higher conversion gain (sensitivity), and the second capacitor has a higher capacitance and therefore lower conversion gain (sensitivity). The two-phase readout operation samples the photodiode charge twice, once using the high sensitivity capacitor and once using the low sensitivity capacitor. The high sensitivity readout phase provides detailed low light condition data but is saturated under brighter light conditions, and the low sensitivity readout phase provides weak data under low light conditions but provides high quality image data under brighter light conditions. The final HDR image is created by combining both high and low sensitivity images into a single image while giving each of them the correct weighted value. | 09-18-2014 |
20140263951 | IMAGE SENSOR WITH FLEXIBLE PIXEL SUMMING - An image sensor can include pixels that are grouped into subsets of pixels, with each subset including three or more pixels. A method for asymmetrical high dynamic range imaging can include capturing an image of a subject scene using a single integration time for all of the pixels. In a subset of pixels, charge in N pixels is read out and summed together. N represents a number that is between two and one less than a total number of pixels in the subset. Un-summed charge is read out from one pixel in the subset. The un-summed charge and the summed charge are combined when producing a high dynamic range image. | 09-18-2014 |
20140263952 | HIGH PERFORMANCE DIGITAL IMAGING SYSTEM - A sensor array including sensor pixels is disclosed. A sensor pixel includes a detector and a readout circuit operatively coupled to the detector. The readout circuit includes at least one readout element formed from an amorphous metal oxide alloy semiconductor. Also disclosed is an image detector panel including a sensor array with sensor pixels arranged into rows and columns. The image detector panel includes a gate driver module configured to address rows of the sensor array, and a multiplexing module configured to select columns of the sensor array and multiplex signals from the sensor pixels. The gate driver module and the multiplexing module include elements formed from an amorphous metal oxide alloy semiconductor. | 09-18-2014 |
20140263953 | IMAGE SENSOR, OPERATION METHOD THEREOF, AND SYSTEM INCLUDING THE SAME - A motion sensing method is implemented by an image sensor, the image sensor including a first pixel and a second pixel. The method includes outputting a first pixel signal of the first pixel during a first integration time of a frame period, outputting a second pixel signal of the second pixel during a second integration time of the frame period, and generating comparison signals indicative of a sensed moving object by comparing the first pixel signal and the second pixel signal. | 09-18-2014 |
20140263954 | FOCAL PLANE ARRAY PERIPHERY THROUGH-VIAS FOR READ OUT INTEGRATED CIRCUIT - A focal plane array (FPA) including a photodiode array (PDA) and a read out integrated circuit (ROIC). The PDA can include a plurality of conductive through-vias extending through the PDA and electrically isolated from the PDA. The plurality of conductive through-vias can be electrically coupled to circuitry on the ROIC circuit side. The plurality of conductive through-vias can include I/O interconnects such as BGA or other flip-chip bump interconnects that replace conventional wire bond connections, thereby reducing area requirements for bond pads on the ROIC and providing full area coverage of the ROIC circuitry by the PDA bulk material. Embodiments may therefore eliminate wire bonds using bonding to a plurality of metal traces for routing of these interconnects. In an embodiment, an optically transparent lid can include a plurality traces electrically coupled to the plurality of conductive through-vias. | 09-18-2014 |
20140263955 | READ OUT INTEGRATED CIRCUIT INPUT/OUTPUT ROUTING ON PERMANENT CARRIER - A focal plane array (FPA) comprising a photodiode array (PDA) and a read out integrated circuit (ROIC), wherein the FPA can include a plurality of conductive bumps that electrically couple PDA circuitry to ROIC circuitry. In an embodiment, an optically transparent lid can include a plurality traces electrically coupled to circuitry on the ROIC which can be used as a conductive path between the ROIC and external pads. | 09-18-2014 |
20140263956 | High-K Dielectric Grid Structure for Semiconductor Device - The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface, a plurality of sensor elements disposed at the front surface of the substrate. Each of the plurality of sensor elements is operable to sense radiation projected towards the back surface of the substrate. The image sensor also includes a high-k dielectric grid disposed over the back surface of the substrate. The high-k dielectric grid has a high-k dielectric trench and sidewalls. The image sensor also includes a color filter and a microlens disposed over the high-k dielectric grid. | 09-18-2014 |
20140263957 | IMAGING SYSTEMS WITH SWITCHABLE COLUMN POWER CONTROL - Electronic devices may include image sensors having image pixel arrays with image pixels arranged in pixel rows and pixel columns. Each pixel column may be coupled to a column line having column readout circuitry and column power control circuitry that selectively enables or disables the column readout circuitry for various column lines. The column power control circuitry and the column readout circuitry may be coupled to column decoder circuitry. The column decoder circuitry may provide a column address signals to the power control and the readout circuitry. The power control circuitry may enable only column lines for which column addresses have been received. | 09-18-2014 |
20140263958 | OXIDE FILM FORMATION OF A BSI IMAGE SENSOR DEVICE - Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and more particularly, a method of forming a dielectric film in a radiation-absorption region without using a conventional plasma etching causing roughness on the surface and non-uniformity within a die and a wafer. The method includes providing layers comprising a substrate having radiation sensors adjacent its front surface, an anti-reflective layer formed over the back surface of the substrate, a sacrificial dielectric layer formed over the anti-reflective layer, and a conductive layer formed over the sacrificial dielectric layer in a radiation-blocking region. The method further includes removing the sacrificial dielectric layer in the radiation-absorption region completely by a highly selective etching process and forming a dielectric film on the anti-reflective layer by deposition such as CVD or PVD while precisely controlling the thickness. | 09-18-2014 |
20140263959 | Method and Apparatus for Image Sensor Packaging - A device having a sensor die with a sensor and a control circuit die with at least one control circuit disposed therein, the control circuit die on the sensor die. A plurality of mounting pads is disposed on a second side of the sensor die. A first electrical connection connects a first one of the plurality of mounting pads to a first control circuit of the at least one sensor control circuit and a second electrical connection connects the first control circuit to the sensor. A third electrical connection connects the sensor to a second control circuit of the at least one control circuit and a fourth electrical connection connects the second control circuit to second one of the plurality of mounting pads. | 09-18-2014 |
20140263960 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a pixel array, a digital gain circuit, and a shading correction circuit. In the pixel array, pixels that accumulate photoelectrically converted charge are arranged in a matrix and the pixel array can control an exposure time of the pixels for each line. The digital gain circuit adjusts a digital gain of an output signal of the pixel array. The shading correction circuit corrects shading of the pixel array by controlling the exposure time of the pixels and the digital gain. | 09-18-2014 |
20140263961 | PERFORMING SPATIAL & TEMPORAL IMAGE CONTRAST DETECTION IN PIXEL ARRAY - An imaging device has an array with pixels that can image an aspect of an object. In addition, pixels in the array can be used to perform motion detection or edge detection. A first and a second pixel can integrate light non-concurrently, and then their outputs may be compared. A difference in their outputs may indicate an edge in an imaging operation, and motion in a motion detection operation. The motion detection operation may be performed without needing the imaging device to have an additional modulated LED light source, and to spend the power to drive that source. | 09-18-2014 |
20140263962 | IMAGE SENSOR INCLUDING PLANAR BOUNDARY BETWEEN OPTICAL BLACK AND ACTIVE PIXEL SENSOR AREAS - An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion. | 09-18-2014 |
20140263963 | VOLUME IMAGING WITH ALIASED VIEWS - Images are detected in a manner that addresses various challenges as discussed herein. As may be consistent with one or more embodiments, aspects are directed to an apparatus having sets of photosensors that detect light rays received at different angles from a specimen via a microlens array, with the light rays detected by each set of photosensors representing an aliased view of the specimen. An output indicative of aliased views of the specimen is provided. Certain embodiments further include a logic circuit that processes the output and generates a deconvolved volume image by combining aliased views of the specimen as detected by the photosensors. | 09-18-2014 |
20140263964 | CMOS Image Sensor with Column-wise Selective Charge-Domain Binning - An imaging device and method for operating the imaging device. Some embodiments comprise a pixel array configured as rows and columns of binning pixel units, each binning pixel unit including a plurality of photosensors that generate respective charge signals in response to incident light. Each binning pixel unit is configured to selectively bin the charge from at least two of the photosensors. The pixel array may be readout in a binning-pixel-unit row by binning-pixel-unit row basis. During readout of each binning pixel unit row, each binning pixel unit in the row is operable to selectively bin at least two of the charge signals therein based on a respective one of control signals provided to each of the binning pixel units in the row. In reading out a binning pixel unit row for a given image frame, a first binning pixel unit may perform in-pixel charge domain binning while a second binning pixel unit in the row may not bin the charge from the different photosensors therein. The respective control signals may be provided as a reset control signal coupled to the binning pixel units via respective vertical reset control lines, each of which is coupled to all of the binning pixel units in a respective column of binning pixel units, each reset control signal being operable to cause potential level resetting of a charge storage region in the binning pixel cell. | 09-18-2014 |
20140263965 | PIXEL, METHOD OF MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICES INCLUDING THE SAME - A pixel of an image sensor includes a color filter configured to pass visible wavelengths, and an infrared cut-off filter disposed on the color filter configured to cut off infrared wavelengths. | 09-18-2014 |
20140263966 | SOLID-STATE IMAGING DEVICE, AND IMAGING DEVICE - A solid-state imaging device according to the present invention includes: a pixel block in which pixels are arranged in a matrix; vertical common signal lines each provided for a corresponding one of columns of the plurality of pixels, and reads signals of pixels in the corresponding column; and a column constant current source which supplies a current to the vertical common signal lines, wherein the column constant current source includes: load transistors each having a source terminal and a drain terminal one of which is connected to one of the vertical common signal lines and the other of which is grounded; a constant voltage supply unit which supplies a voltage to gate terminals of the load transistors; and a voltage holding circuit in which sample and hold circuits are connected in multiple stages, and which stabilizes the voltage which is supplied to the gate terminals of the load transistors. | 09-18-2014 |
20140263967 | FULL COLOR SINGLE PIXEL INCLUDING DOUBLET OR QUADRUPLET SI NANOWIRES FOR IMAGE SENSORS - An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals. | 09-18-2014 |
20140263968 | COLOR IMAGING DEVICE - An imaging apparatus | 09-18-2014 |
20140263969 | MOVING IMAGE SENSOR HAVING MULTIPHASE DIGITAL SUMMATION - The invention relates to time-delay and charge integration image sensors employing active CMOS technology pixels. The sensor comprises N rows of pixels and each pixel of generally square shaped comprises two (though possibly also three or four) photodiodes and charge storage nodes, having means for transferring charges from each photodiode to one or other of the storage nodes. Control of transfer from the photodiodes to one then the other of the storage nodes is carried out in such a way that one storage node receives in succession, during two successive phases of a periodic cycle, the charges from two photodiodes that have seen the same image portion during the two phases. The charges received by one of the storage nodes during the first phase is added to the charges received by the other storage node in the following phase. | 09-18-2014 |
20140284452 | APPARATUS AND METHOD FOR MANUFACTURING DISPLAY DEVICE - According to one embodiment, an apparatus for manufacturing a display device, includes: a first holding section configured to hold a first substrate; a second holding section configured to hold a second substrate; a turning section configured to turn the first holding section such that the first substrate and the second substrate face each other; an elevation unit configured to elevate the second holding section and attach the first substrate and the second substrate via an adhesive layer; and a first radiation section configured to radiate ultraviolet rays from at least one direction of an inclined lower side of an opening of a space between the first substrate and the second substrate and an inclined upper side of the opening toward the opening. | 09-25-2014 |
20140284453 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device according to the present disclosure includes: a pixel unit in which unit pixels are arranged two-dimensionally, each of the unit pixels including: a photodiode which stores signal charges; a transfer transistor for transferring the signal charges stored in the photodiode; a charge detection unit which temporarily stores the transferred signal charges; and a reset transistor for resetting the signal charges stored in the charge detection unit; and a vertical scanning unit which drives the pixel unit, the vertical scanning unit including: a row selection unit; a level shift circuit for converting a level of an externally inputted power supply voltage; and a buffer circuit for buffering a voltage whose level has been converted by the level shift circuit, the level shift circuit including: a step-down level shift circuit; and a step-up level shift circuit isolated from the step-down level shift circuit by a well. | 09-25-2014 |
20140284454 | Image Sensors and Methods with High Speed Global Shutter Pixels - An image sensor includes a plurality of pixels and a row driver. Each pixel includes a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node. The row driver is configured to provide signals to the first transfer gate and the second transfer gate of each pixel such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. The row driver is also configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel. | 09-25-2014 |
20140284455 | SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND SIGNAL PROCESSING METHOD - This solid-state image sensor includes a photosensitive cell array including first through fourth photosensitive cells | 09-25-2014 |
20140291481 | ENHANCED PHOTON DETECTION DEVICE WITH BIASED DEEP TRENCH ISOLATION - A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a dielectric layer lining an inside surface of the DTI structure and doped semiconductor material disposed over the dielectric layer inside the DTI structure. The doped semiconductor material disposed inside the DTI structure is coupled to a bias voltage to isolate the photodiode in the first region of the semiconductor material from the second region of the semiconductor material. | 10-02-2014 |
20140291482 | COMPARATOR, SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND DRIVING METHOD - A comparator includes: a first amplifying unit that includes a differential pair configured with a pair of transistors which are first and second transistors, and amplifies a difference of signals input to each of the gate electrodes of the first and second transistors, to output; a second amplifying unit that amplifies the signal output from the first amplifying unit; a third transistor that connects the first transistor to a power source voltage; a fourth transistor that connects the second transistor to the power source voltage; a fifth transistor that connects a connection point of gate electrodes of the third transistor and the fourth transistor to a drain of the third transistor; and a sixth transistor that connects a connection point of gate electrodes of the third transistor and the fourth transistor to a drain of the fourth transistor. | 10-02-2014 |
20140291483 | IMAGE PICKUP UNIT AND IMAGE PICKUP DISPLAY SYSTEM - An image pickup unit includes: an image pickup section including a plurality of pixels each including a photoelectric conversion device and a field effect transistor; a drive section configured to control a voltage to be applied to the transistor to perform reading-out driving of a signal charge accumulated in the pixel; and a correction section configured to correct a voltage value used to drive the transistor, the transistor including first and second gate electrodes arranged to face each other with a semiconductor layer interposed in between, the drive section being configured to perform ON/OFF control of the transistor by applying first and second voltages to the first and second gate electrodes of the transistor, respectively, and the correction section being configured to correct a voltage value of one or both of the first and second voltages in accordance with a shift amount of a threshold voltage of the transistor. | 10-02-2014 |
20140291484 | MICROSCOPE WITH STRUCTURED ILLUMINATION - A microscope and a method of microscopy that uses structured illumination, involving imaging a grid structure or periodic light distribution on a sample, wherein by displacing the image of the grid structure, imaging is carried out under different phase positions, and a high-resolution sample image is calculated from the recorded images, characterized in that the grid structure or light distribution is generated by using at least two phase grids arranged one in front of the other, and different orientations of the light distribution perpendicular to the illumination direction are generated by displacing the phase grids relative to one another, with displacement, imaging and calculation being carried out for different orientations. | 10-02-2014 |
20140291485 | SOLID-STATE IMAGING DEVICE - To remove reset noise in pixels while the circuit configuration is kept in low power consumption, a device includes pixels arranged in row and column directions, in which each of the pixels includes a charge-voltage conversion terminal for voltage-converting signal charges transferred from a photoelectric conversion element, and a first reset means for resetting a voltage at the charge-voltage conversion terminal; first signal lines, each of which is connected to the pixels in each column; a scanning means for selecting one row among others; and a second reset means for resetting voltages at the signal lines. In the device, on each selected row, by voltage signals at the charge-voltage conversion terminals and the converted voltage signals from the transferred signal charges are read out to and stored in the signal lines in a floating potential state, and then are output. | 10-02-2014 |
20140299745 | APPARATUS, SYSTEM, AND METHOD FOR EMISSION FILTER - An apparatus, system, and method for emission filter. A filter apparatus is presented. In one embodiment, the filter apparatus may be adapted for fluorescence spectroscopy. In a particular embodiment, the filter apparatus comprises a solution. The solution may include a polar protic solvent and an absorbing specimen. Additionally, the filter apparatus may include an adhesive to conform the solution into a solid filter. | 10-09-2014 |
20140299746 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM - A photoelectric conversion unit has first semiconductor regions and a second semiconductor region that is disposed between the first semiconductor regions being adjacently disposed in the unit. Impurity concentration profile in a depth direction of the first and semiconductor regions has a plurality of peaks. The impurity concentration peaks of the first semiconductor region include a first impurity concentration peak and a second impurity concentration peak being lower than the first impurity concentration peak. The impurity concentration peaks of the second semiconductor region include a third, a fourth, and a fifth impurity concentration peak. The fourth impurity concentration peak is higher than the third impurity concentration peak, and a fifth impurity concentration peak is higher than the third impurity concentration peak. The depth of the third impurity concentration peak is closer to the depth of the second impurity concentration peak than that of the first impurity concentration peak. | 10-09-2014 |
20140299747 | SOLID-STATE IMAGING DEVICE AND METHOD FOR DRIVING THE SAME - A solid-state imaging device includes: multiple pixels. Each pixel is arranged at a surface layer portion of a semiconductor substrate, and includes: a photoelectric conversion portion that converts light incident into an electric charge; a charge holding portion that stores the electric charge, and is arranged in the semiconductor substrate; a multiplication gate electrode that is capacitively coupled with the charge holding portion, and is arranged on the semiconductor substrate via an insulation film; and a charge barrier portion that is arranged between the charge holding portion and the insulation film, and has a higher impurity concentration than the semiconductor substrate. | 10-09-2014 |
20140306095 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes a plurality of pixels, wherein one or more of the plurality of pixels have a pupil dividing portion and a light receiving portion, the light receiving portion includes a plurality of photoelectric conversion regions, an element isolation region is provided between adjacent ones of the plurality of photoelectric conversion regions, and wherein a scatterer is provided within the pupil dividing portion and above the element isolation region, and the scatterer is formed from a material of a refractive index smaller than a refractive index of a material of the pupil dividing portion peripheral to the scatterer. | 10-16-2014 |
20140312207 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus and an imaging system which can reduce the occurrence of darkening and decrease deterioration in CDS performance are provided. The solid-state imaging apparatus has: a pixel unit including a photoelectric conversion unit for generating a signal by a photoelectric conversion; an amplifier unit for amplifying the signal generated by the photoelectric conversion unit; and a limiting circuit for limiting a level of an output signal from the amplifier unit. The pixel unit outputs a noise signal under a reset state during a first period and outputs a pixel signal under a non-reset state during a second period. The limiting circuit limits the level of the output signal from the amplifier unit in the first period, lower than the level of the output signal from the amplifier unit in the second period. | 10-23-2014 |
20140312208 | DRIVE CIRCUIT FOR SEMICONDUCTOR IMAGE SENSOR ARRAY - A refresh control line GR (n) is selected while a read control line GT (n+1) or a read control line GT (n−1), which controls a read switch of a pixel of a semiconductor image sensor array is selected. This configuration allows the read and refresh operations or the refresh and read mode setting operations to be performed simultaneously, and reduces the period for scanning the semiconductor image sensor array. | 10-23-2014 |
20140319321 | IMAGING APPARATUS AND IMAGING SYSTEM - One embodiment is an imaging apparatus including multiple pixels. The pixels include first and second photoelectric conversion units, a floating diffusion portion, and first and second transfer transistors configured to transfer electric carriers generated at the respective first and second photoelectric conversion units to the floating diffusion portion. The imaging apparatus includes a first conductive member electrically connected to the gate electrode of the first transfer transistor, a second conductive member electrically connected to the gate electrode of the second transfer transistor, and a control unit. The distance of closest proximity between the first conductive member and the floating diffusion portion is shorter than distance of closest proximity between the second conductive member and the floating diffusion portion. | 10-30-2014 |
20140319322 | MULTIPLE CONVERSION GAIN IMAGE SENSOR - An image sensor including an array of pixels, each having: a storage node coupled to a capacitive sense node by a transfer transistor; and a connection transistor coupling the pixel sense node to an intermediate node of the pixel, wherein each pixel has its intermediate node coupled to a node of application of a reset voltage by a reset transistor, and different pixels have their respective intermediate nodes interconnected by a conductive connection track. | 10-30-2014 |
20140319323 | SOLID-STATE IMAGING ELEMENT, DRIVING METHOD, AND ELECTRONIC APPARATUS - A solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part. | 10-30-2014 |
20140319324 | Image Sensor - An apparatus includes a three dimensional array of light receptors disposed within a substrate having a light receiving surface, where light receptors disposed closer to the light receiving surface are responsive to light having shorter wavelengths than light receptors disposed further from the light receiving surface, and where each light receptor is configured to output a binary value and to change state between an off-state and an on-state by the absorption of at least one photon. | 10-30-2014 |
20140319325 | LAMP SIGNAL GENERATION CIRCUIT AND CMOS IMAGE SENSOR - A ramp signal generation circuit | 10-30-2014 |
20140326855 | IMAGE CAPTURE MODULE - An image capture module is disclosed, which includes a holder and a lens unit. A plurality of through holes are disposed on the holder, wherein at least one light blocking portion is disposed between the two adjacent through holes. The lens unit is disposed in the holder and has a plurality of light gathering regions and at least one non-light gathering region, wherein the light gathering regions respectively align with each of the through holes, and the non-light gathering region aligns with the light blocking portion. | 11-06-2014 |
20140326856 | INTEGRATED CIRCUIT STACK WITH LOW PROFILE CONTACTS - An integrated circuit system includes first and second device wafers, each having lateral sides along which a plurality of T-contacts are disposed. The first and second device wafers are stacked together and the lateral sides of the first and second device wafers are aligned such that each one of the plurality of T-contacts of the first device wafer is coupled to a corresponding one of the plurality of T-contacts of the second device wafer. A plurality of solder balls are attached to the lateral sides and are coupled to the plurality of T-contacts. A circuit board includes a recess with a plurality of contacts disposed along lateral sides within the recess. The first and second device wafers are attached to the circuit board such that each one of the plurality of solder balls provide a lateral coupling between the first and second device wafers and the circuit board. | 11-06-2014 |
20140326857 | CABLE, CABLE CONNECTION STRUCTURE, AND IMAGING APPARATUS - A cable includes: a core wire that is electrically conductive; a first inner insulation layer that covers an outer periphery of the core wire and has an exposing portion that exposes the core wire at a distal end side of the first inner insulation layer; and a first latching portion that is fixed to the core wire in the exposing portion, and is latched onto the first inner insulation layer and holds the core wire by coming into contact with the first inner insulation layer. | 11-06-2014 |
20140332664 | IMAGE SENSOR - An image sensor including a plurality of sensing pixels, a plurality of micro-lenses disposed on the sensing pixels and a plurality of first light distributing elements disposed between the sensing pixels and the micro-lenses is provided. Each of the first light distributing elements includes a first refractive index pattern and a second refractive index pattern surrounding the first refractive index pattern. The refractive index of the first refractive index pattern is larger than the refractive index of the second refractive index pattern. | 11-13-2014 |
20140332665 | PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS - A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation. | 11-13-2014 |
20140332666 | IMAGING APPARATUS - An imaging apparatus according to the present invention comprises: an image forming optical system; an image sensor including a plurality of pixels; an image fiber including a plurality of optical fibers that guides light from the image forming optical system to the image sensor; and a processing unit that applies processing for compensating for illumination unevenness of the image sensor caused by the image fiber, wherein at least some of the light propagating inside a first one of the optical fibers and at least some of the light propagating inside a second one of the optical fibers are guided to one of the pixels. | 11-13-2014 |
20140332667 | LIGHT SOURCE UNIT AND IMAGE READING DEVICE - The light source unit comprises a light source emitting visible light and light of a non-visible wavelength; a rod-like light guide at the end of which the light source is provided and within which incident light from the light source is propagated in the long axis direction; a reflector that is linear along the long axis direction and provided on the contour surface of the light guide; and a support member encompassing the reflector and light guide, having a given width in the direction perpendicular to the long axis direction, and provided with an opening extending along the long axis direction. The reflector and support member are formed by a reflecting material containing a substance reflecting the light of a non-visible light wavelength and reflecting the visible light and light of a non-visible light wavelength. | 11-13-2014 |
20140332668 | IMAGING APPARATUS, ELECTRONIC DEVICE, PHOTOSTIMULATED LUMINESCENCE DETECTION SCANNER, AND IMAGING METHOD - An object is to improve accuracy of photon counting in an imaging apparatus. | 11-13-2014 |
20140332669 | ARRANGEMENT OF CIRCUITS IN PIXELS, EACH CIRCUIT SHARED BY A PLURALITY OF PIXELS, IN IMAGE SENSING APPARATUS - In an image sensing apparatus having a plurality of unit cells, each including a plurality of photoelectric conversion elements and a common circuit shared by the plurality of photoelectric conversion elements, arranged in either one or two dimensions, the plurality of photoelectric conversion elements are arranged at a predetermined interval. | 11-13-2014 |
20140339396 | IMAGING DEVICE AND METHOD OF DRIVING THE SAME - An imaging device and a method of driving the imaging device including a plurality of pixels and a control circuit to apply a signal to the pixels, wherein the pixels include a photodiode, a floating diffusion node, a first storage node and a second storage node connected in parallel between the photodiode and the floating diffusion node, a first shift switching unit to selectively shift charges integrated in the photodiode to the first storage node, a second shift switching node to selectively shift the charges integrated in the photodiode to the second storage node, a first transfer switching unit to selectively transfer charges integrated in the first storage node to the floating diffusion node, a second transfer switching unit to selectively transfer charges integrated in the second storage node to the floating diffusion node, and a reset switching unit. | 11-20-2014 |
20140339397 | IMAGING DEVICE AND METHOD FOR DRIVING THE SAME - An imaging device including a plurality of pixels and a control circuit to apply a signal to the pixels, wherein the pixels include a photodiode formed on a substrate and a first terminal and a second terminal, a shift switching unit to be connected to the first terminal, a first storage node, a transfer switching unit, a second storage node, and a reset switching unit, when an operating mode is set as a first mode, the control circuit allows charges integrated in the photodiode to be shifted to the first storage node during a first interval and the second terminal during a second interval, and when the operating mode is set as a second mode, the charges integrated in the photodiode are not shifted to the second terminal. | 11-20-2014 |
20140346320 | INTEGRATED CIRCUIT, ANALOG-DIGITAL CONVERTER AND CMOS IMAGE SENSOR WITH THE SAME - A integrated circuit includes an analog power domain circuit having more than one stages, a digital power domain circuit having at least one stage receiving the output signal of the analog power domain circuit, and a voltage regulating unit suitable for supplying at least one scaled power to the latter part of the stages to reduce a voltage level difference between the analog power domain circuit and the digital power domain circuit. | 11-27-2014 |
20140346321 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM - A photoelectric conversion apparatus includes a photoelectric-conversion element configured to output electric charges generated by photoelectric conversion to a first node, and an accumulation circuit having an input terminal connected to the first node and being capable of changing an integral capacitance value. The number of drain or source of a MOS transistor in an OFF state connected to the first node is one. | 11-27-2014 |
20140346322 | MANUFACTURING METHOD FOR IMAGE PICKUP UNIT AND IMAGE PICKUP UNIT - A manufacturing method for an optical unit includes: a step of bonding plural lens wafers, on which optical components are formed, and forming a lens unit wafer including plural lens units; a step of bonding a bending optical element wafer including plural bending optical elements to a first surface of the lens unit wafer such that the plural bending optical elements are respectively opposed to the plural lens units and forming an optical unit wafer; and a step of separating and individualizing the optical unit wafer for each of the lens units and the bending optical elements and manufacturing plural optical units. | 11-27-2014 |
20140353468 | ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME, AND IMAGE SENSOR INCLUDING THE ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE IMAGE SENSOR - An isolation structure and method of forming the same. The isolation structure includes a first isolation structure having including an insulation layer formed in a trench in a substrate and a second isolation structure, formed on the first isolation structure. The second isolation structure includes a first impurity region formed in the substrate, the first impurity region having a first impurity doping concentration, and a second impurity region that is formed around the first impurity region, the second impurity region having a second impurity doping concentration that is greater than the first doping concentration. | 12-04-2014 |
20140353469 | IMAGE SENSOR, SEMICONDUCTOR DEVICE AND IMAGE SENSOR SYSTEM - The present technology provides a semiconductor device that includes a substrate including an active region and an device isolation region, a plurality of micro insulation structures formed in the substrate of the device isolation region and spaced from each other, and an impurity region suitable for filling spaces between the micro insulation structures and for surrounding the micro insulation structures in the substrate of the device isolation region, and a method of fabricating the semiconductor device by improving a method of forming device isolation regions that insulate active regions. In particular, discontinuous micro insulation structures are suggested. | 12-04-2014 |
20140353470 | DETECTION APPARATUS, METHOD OF MANUFACTURING THE SAME, AND RADIATION DETECTION SYSTEM - A method of manufacturing a detection apparatus including pixels is provided. The method includes forming an organic insulation layer above a substrate above which a switching element is formed, forming pixel electrodes divided for individual pixels above the organic insulation layer; forming an inorganic material portion above a portion of the organic insulation layer, which is uncovered with the pixel electrodes, forming an inorganic insulation film covering the plurality of pixel electrodes and the inorganic material portion, forming a semiconductor film covering the inorganic insulation film, and dividing the semiconductor film for individual pixels by etching using a stacked structure of the inorganic material portion and the inorganic insulation film as an etching stopper. | 12-04-2014 |
20140361148 | SYSTEM AND METHOD FOR HILBERT PHASE IMAGING - Hilbert phase microscopy (HPM) as an optical technique for measuring high transverse resolution quantitative phase images associated with optically transparent objects. Due to its single-shot nature, HPM is suitable for investigating rapid phenomena that take place in transparent structures such as biological cells. A preferred embodiment is used for measuring biological systems including measurements on red blood cells, while its ability to quantify dynamic processes on the millisecond scale, for example, can be illustrated with measurements on evaporating micron-size water droplets. | 12-11-2014 |
20140361149 | Method for Synchronizing Optical Units of a Photoelectric Barrier and Light Curtain - The present invention relates to a method for synchronizing the optical units of a photoelectric barrier and to such a photoelectric barrier. The synchronization method comprises the steps of transmitting radiation forming a synchronization signal from a first optical sender of the first optical unit; controlling a plurality of the optical receivers of the at least one second optical unit to monitor whether the synchronization signal has been received and performing a synchronization step if the synchronization signal has been received. The method further performs the step of defining at least one of said plurality of optoelectronic components to be used for the synchronization step. | 12-11-2014 |
20140367551 | DOUBLE DATA RATE COUNTER, AND ANALOG-DIGITAL CONVERTING APPRATUS AND CMOS IMAGE SENSOR USING THE SAME - A double data rate (DDR) counter includes a clock selection unit suitable for selectively inverting a first counting clock based on a control signal and for outputting a second counting clock, a first latch stage suitable for latching the second counting clock based on a counting enable signal and for outputting the least significant bit (LSB) of the DDR counter, a determination unit suitable for generating the control signal based on the last bit state of the LSB in a reset counting period, and a second latch stage suitable for receiving the LSB as a clock input to generate a higher bit of the LSB at least in a main counting period. | 12-18-2014 |
20140367552 | IMAGE SENSORS, METHODS, AND PIXELS WITH TRI-LEVEL BIASED TRANSFER GATES - An image sensor includes at least one pixel with a transfer gate that is controllable among at least three biasing conditions, including a first biasing condition in which electrons are transferable from a photodiode to a potential well under the transfer gate, a second biasing condition in which the electrons are confined in the potential well under the transfer gate, and a third biasing condition in which the electrons are transferable out of the potential well under the transfer gate. The pixel includes a p+ type doped barrier implant located at least partially under a portion of the transfer gate, and a pinned charge transfer barrier located on the opposite side of the transfer gate from the photodiode that includes a p+ type doped region and an n-type doped region. The image sensor can operate in a global shutter mode and/or a rolling shutter mode. | 12-18-2014 |
20140367553 | System, Method And Apparatus For Deep Slot, Thin Kerf Pixelation - An imaging array may comprise a plurality of imaging pixels that form an array, the array having a high energy end, a light exit end and an axis, and each of the pixels has a pixel width PW orthogonal to the axis; septa positioned in the array such that there is a septum between adjacent ones of the imaging pixels, and each of the septa has a depth D in an axial direction; and an aspect ratio of PW:D less than 0.2. | 12-18-2014 |
20140367554 | IMAGING ELEMENT, METHOD FOR MANUFACTURING IMAGING ELEMENT, PIXEL DESIGN METHOD, AND ELECTRONIC APPARATUS - An imaging element includes a plurality of pixels that are two-dimensionally arranged and each have a light receiving part including a photoelectric conversion element and a light collecting part that collects incident light toward the light receiving part. Each of the light collecting parts in the plurality of pixels includes an optical functional layer having, in a surface, a specific projection and depression structure depending on the pixel position. | 12-18-2014 |
20140367555 | IMAGE MEASUREMENT APPARATUS AND IMAGE MEASUREMENT METHOD - An image measurement apparatus includes: a lighting unit that emits a first narrowband light with a bandwidth (i) narrower than a bandwidth of a visible light and (ii) including a dominant wavelength of a color of a positive cell nucleus; an image obtaining unit that obtains an examination image by capturing an image of a pathologic examination specimen to which the first narrowband light is emitted; a cell nuclei extracting unit that extracts pixels of positive cell nuclei from the examination image by comparing pixel values of the examination image with a predetermined threshold; a positive proportion calculating unit that calculates a proportion of the positive cell nuclei among cell nuclei included in the pathologic examination specimen, using the pixels of the positive cell nuclei extracted by the cell nuclei extracting unit; and an output unit that outputs the proportion. | 12-18-2014 |
20140374570 | GAIN-RANGING CHARGE AMPLIFIER - The system may include a pixel array, a selector, a sampler, and a converter. The pixel array may generate output signals that representing radiation incident upon the pixel array. The selector may select one of the output signals. The sampler may sample the selected output signal. The converter may generate a digital signal based upon the selected output signal. The sampler may include a charge integrator that compensates for parasitic capacitance of the selector by selecting a first feedback capacitance to obtain a first sample, and after obtaining the first sample, selecting a second feedback capacitance to obtain a second sample. The first feedback capacitance may be greater than the second feedback capacitance. | 12-25-2014 |
20140374571 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a pixel array unit having pixels in a matrix form to store charge obtained by photoelectric conversion; a reference voltage generation circuit configured to generate a reference voltage based on an inter-terminal voltage of a first capacitor; and a column ADC circuit configured to calculate an AD conversion value of a pixel signal read out from each of the pixels on the basis of a result of comparison between the pixel signal and the reference voltage, the first capacitor comprising:
| 12-25-2014 |
20140374572 | UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR HAVING THE SAME - A unit pixel of an image sensor includes a photoelectric conversion unit, a mode control unit, a first signal generation unit and a second signal generation unit. The photoelectric conversion unit generates photo-charges in response to incident light and provides the photo-charges to a first node. The mode control unit prevents the photo-charges from being discharged from the first node in a first operation mode, and generates a sensing current by discharging the photo-charges and generates a sensing voltage proportional to the sensing current in a second operation mode. The first signal generation unit generates an analog signal based on an amount of the photo-charges accumulated in the first node in the first operation mode. The second signal generation unit generates an on signal and an off signal based on a change of the sensing voltage in the second operation mode. The unit pixel provides various sensing outputs effectively. | 12-25-2014 |
20140374573 | SPECTRAL IMAGING SENSORS AND METHODS - Spectral imaging sensors and methods are disclosed. A spectral imaging sensor includes a color-coded array of apertures positioned to receive light from an object to be imaged. The array includes a first plurality of apertures configured to pass light in a first predetermined wavelength range and a second plurality of apertures configured to pass light in a second predetermined wavelength range different from the first predetermined wavelength range. The imaging sensor further includes one or more optical elements positioned to receive light passing through the color-coded array, and a photodetector positioned to receive light from the one of more optical elements. A spectral imaging method includes the steps of filtering light from an object to be imaged through a color-coded array of apertures, redirecting the filtered light with one or more optical elements, and receiving the redirected light with a photodetector. | 12-25-2014 |
20140374574 | FORMING OF A NANOSTRUCTURED SPECTRAL FILTER - A spectral filter includes an assembly of filtering cells. Each cell has a same nanostructured pattern and a preferential direction of the pattern. This preferential direction is, for each cell, oriented approximately radially with respect to a single point of the spectral filter. Alternatively, this preferential direction is, for each cell, oriented approximately ortho-radially with respect to the single point of the spectral filter. The single point may be a center point. Alternatively, the single point may correspond to an optical axis of a lens element associated with the spectral filter. | 12-25-2014 |
20150008306 | SYSTEM ARCHITECTURE FOR A CONSTANT FOOTPRINT, CONSTANT GSD, CONSTANT SPATIAL RESOLUTION LINESCANNER - A line scanner scans in a cross track direction and moves forward on a platform in an along track direction. The line scanner includes a plurality of detectors forming a left array and a plurality of detectors forming a right array. The left array and the right array are tilted away from a line formed in the along track direction. The left array is configured to detect scene radiance from a surface of an object when the line scanner is scanning the surface on the right side of the line formed in the along track direction. The right array is configured to detect scene radiance from the surface of the object when the line scanner is scanning the surface to the left side of the line formed in the along track direction. The detectors in each respective array are configured to simultaneously detect the scene radiance. | 01-08-2015 |
20150008307 | Imaging Array with Improved Dynamic Range Utilizing Parasitic Photodiodes - A pixel sensor having a main photodetector and a parasitic photodiode and a method for reading out that pixel sensor are disclosed. The pixel sensor is read by reading a first potential on a floating diffusion node in the pixel sensor while the floating diffusion node is isolated from the main photodiode. The pixel sensor is then exposed to light such that the floating diffusion node and the photodetector are both exposed to the light. A second potential on the floating diffusion node is then readout while the floating diffusion node is isolated from the main photodiode. After the first and second potentials are readout, a third potential on the floating diffusion node is readout. The main photodiode is then connected to the floating diffusion node, and a fourth potential on the floating diffusion node is readout. First and second light intensities are determined from the readout potentials. | 01-08-2015 |
20150008308 | Analog-to-Digital Converter with Redundancy for Image Sensor Readout - Methods and systems for analog-to-digital conversion applicable to an image sensor, such as a CMOS image sensor, in which an ADC comprises built-in redundancy such that the ADC can start its conversion cycle before the ADC input settles to a desired resolution and the ADC can yet accurately convert the ADC input to a digital value with the desired resolution. In a CMOS image sensor, such an ADC configuration enables the pixel readout time to overlap with the ADC conversion time, reducing the total time needed to convert the pixel signal value to a digital value with the desired resolution. | 01-08-2015 |
20150008309 | HIGH-RESOLUTION SCANNING MICROSCOPY - In a microscope for high resolution scanning microscopy of a sample, said microscope comprising—an illumination device for illuminating the sample,—an imaging device for scanning at least one point spot or line spot across the sample and for imaging the point spot or line spot into a diffraction-limited, stationary single image with magnification into a detection plane ,—a detector device for detecting the single image in the detection plane for different scanning positions with a spatial resolution, which, taking into consideration the magnification, is at least twice as high as a full width at half maximum of the diffraction-limited single image,—an evaluation device for evaluating a diffraction pattern of the single image for the scanning positions from data of the detector device and for generating an image of the sample, said image having a resolution that is increased beyond the diffraction limit, provision is made for—the detector device to have a detector array, which has pixels and is larger than the single image, and—a non-imaging redistribution element, which is disposed upstream of the detector array and distributes the radiation from the detection plane in a non-imaging manner among the pixels of the detector array. | 01-08-2015 |
20150014514 | Sensor - A sensor is disclosed that can include a light component in support of a first light source operable to direct a first beam of light, and a second light source operable to direct a second beam of light. The sensor can also include an imaging device positioned proximate the light component and operable to directly receive the first beam of light and the second beam of light and convert these into electric signals. The imaging device and the light component can be movable relative to one another. The sensor can further include a light location module configured to receive the electric signals and determine locations of the first beam of light and the second beam of light on the imaging device. In addition, the sensor can include a position module configured to determine a relative position of the imaging device and the light component based on the locations of the first beam of light and the second beam of light on the imaging device. | 01-15-2015 |
20150014515 | MOBILE DEVICE AND OPTICAL IMAGING LENS THEREOF - Present embodiments provide for a mobile device and an optical imaging lens thereof. The optical imaging lens comprises five lens elements positioned sequentially from an object side to an image side. Through controlling the convex or concave shape of the surfaces, the refracting power of the lens elements and two parameters to meet an inequality associated with the thickness of the second lens element, the optical imaging lens shows better optical characteristics and the total length of the optical imaging lens is shortened. | 01-15-2015 |
20150014516 | DA CONVERTER, AD CONVERTER, AND SEMICONDUCTOR DEVICE - A DA converter includes a first DA conversion section for obtaining an analog output signal in accordance with a digital input signal value, and a second DA conversion section for obtaining an analog gain control output signal in accordance with a digital gain control input signal value. In the DA converter, the gain control of the analog output signal generated by the first DA conversion section is performed on the basis of the gain control output signal generated by the second DA conversion section. | 01-15-2015 |
20150014517 | INTEGRAL A/D CONVERTER AND CMOS IMAGE SENSOR - The integral type Analog/Digital (AD) converter includes: a comparator configured to compare a reference voltage of a ramp waveform with an input voltage and output a comparison signal; a DLL circuit configured to generate a plurality of clock signals; a delay adjustment circuit configured to delay the comparison signal; a counter configured to count a time from starting of changing of the ramp waveform to the inversion of the outputting from the delay adjustment circuit and output the counted result as a high-order bit; and a TDC configured to latch and decode the plurality of clock signals when the output of the delay adjustment circuit is inverted and output the latched and decoded result as a low-order bit, wherein the TDC starts an operation thereof by the inversion of the comparison signal, and stops the operation thereof by the inversion of the output signal of the delay adjustment circuit. | 01-15-2015 |
20150021459 | DUAL CONVERSION GAIN IMAGE SENSOR CELL - An image sensor cell formed inside and on top of a substrate of a first conductivity type, including: a read region of the second conductivity type; and, adjacent to the read region, a storage region of the first conductivity type topped with a first insulated gate electrode. The first electrode is arranged to receive, in a first operating mode, a first voltage causing the inversion of the conductivity type of the storage region, so that the storage region behaves as an extension of the read region, and, in a second operating mode, a second voltage causing no inversion of the storage region. | 01-22-2015 |
20150021460 | SOLID STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid state imaging device includes a pixel unit and an output unit. The pixel unit has a first pixel and a second pixel different from the first pixel. The output unit has a first capacitance to which a first pixel signal read from the first pixel is input, a second capacitance to which a second pixel signal read from the second pixel is input, and an operational amplifier outputting an output signal in accordance with the first capacitance and the second capacitance. | 01-22-2015 |
20150021461 | IMAGE SENSOR AND ELECTRONIC DEVICE - There is provided an image sensor including pixels each configured to include a transfer transistor configured as an embedded channel type MOS transistor and to output a pixel signal based on a charge transferred to a floating diffusion from a photodiode by the transfer transistor in an on state, and a determination unit configured to convert the output pixel signal to a digital value, then compare the converted digital value to a threshold value, and thereby make a binary determination on presence or absence of incidence of a photon on the pixel that has generated the pixel signal. | 01-22-2015 |
20150021462 | SOLID-STATE IMAGING UNIT AND ELECTRONIC APPARATUS - A solid-state imaging unit includes: a pixel section including a plurality of pixels each including a photoelectric conversion section, a charge-voltage conversion section, and a transfer transistor transferring charge accumulated in the photoelectric conversion section to the charge-voltage conversion section; and a storage section storing information about an optimum value of an intermediate voltage to be applied to a gate of the transfer transistor at time of an intermediate transfer operation when a signal charge accumulated in the photoelectric conversion section is divided to be read in a predetermined times of the intermediate transfer operations and a complete transfer operation. | 01-22-2015 |
20150021463 | IMAGING DEVICE, DRIVING METHOD AND ELECTRONIC APPARATUS WITH ELECTRIC POTENTIAL APPLIED OUTSIDE EXPOSURE PERIOD - Disclosed herein is an imaging device including: a plurality of pixels disposed to form a matrix having pixel rows, the pixels including a pixel electrode formed on a silicon substrate for one of the pixels by being separated away from another pixel electrodes formed for one of the other pixels, a photoelectric conversion film formed on the pixel electrode, and an opposite electrode formed on the photoelectric conversion film; and a driving section configured to apply an electric potential to the photoelectric conversion film on each of the pixel rows at least having read timings different from each other with a predetermined timing outside an exposure period of the pixels in a direction opposite to that of an electric potential applied to the photoelectric conversion film during the exposure period of the pixels. | 01-22-2015 |
20150028187 | IMAGE SENSOR DEVICE WITH INFRARED FILTER ADHESIVELY SECURED TO IMAGE SENSOR INTEGRATED CIRCUIT AND RELATED METHODS - An image sensor device may include a mounting substrate having an IC-receiving cavity therein and a filter-receiving opening aligned with the IC-receiving cavity, an image sensor integrated circuit (IC) within the IC-receiving cavity and having an image sensing area aligned with the filter-receiving opening, and an adhesive bead on the image sensor IC surrounding the image sensing area. Furthermore, an infrared (IR) filter may be within the filter-receiving opening and have peripheral portions contacting the adhesive bead. | 01-29-2015 |
20150028188 | NON-RETRO-REFLECTIVE IMAGING USING TILTED IMAGE PLANES - A non-retro-reflective imaging system and methods in which tilted image plane imaging is combined with selective Fourier filtering to substantially eliminate retro-reflection from the system. In certain examples, tilted image plane imaging is achieved using sliced source imaging. Through rotation of the image plane, the majority of incident light is reflected off-axis, rather than being retro-reflected. The Fourier filter is used to block incoming light from a particular angle that would otherwise be normally incident on the rotated image plane and retro-reflected. One example of a non-retro-reflective imaging system includes an optical element that focuses electromagnetic radiation onto a tilted image plane, an imaging sensor co-aligned with the tilted image plane, and a Fourier filter positioned in a Fourier plane of the optical element, a position of the Fourier filter in the Fourier plane determined by the tilt angle of the tilted image plane. | 01-29-2015 |
20150028189 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel and a floating diffusion. The pixel includes a photoelectric conversion element that converts incident light into and electric charge, a first transfer gate that includes a plurality of electrodes and transfers the electric charge from the photoelectric conversion element, a charge holding region that holds the electric charge transferred from the photoelectric conversion element by the first transfer gate, each of the plurality of electrodes of the first transfer gate corresponding to a sub-region of the charge holding region, and a second transfer gate that transfers the electric charge from the charge holding region. The floating diffusion region holds the electric charge transferred from the charge holding region by the second transfer gate. | 01-29-2015 |
20150028190 | COUNTER CIRCUIT, ANALOG-TO-DIGITAL CONVERTER, AND IMAGE SENSOR INCLUDING THE SAME AND METHOD OF CORRELATED DOUBLE SAMPLING - A counter circuit includes a first counter and a second counter. The first counter is configured to count a first counter clock signal which toggles with a first frequency to generate upper (N−M)-bit signals of N-bit counter output signals, in response to a first counting enable signal based on a first comparison signal during a coarse counting interval. N and M are natural numbers, N is greater than M, and M is greater than or equal to 3. The second counter is configured to count a second counter clock signal which toggles with a second frequency which is higher than the first frequency to generate lower M-bit signals of the N-bit counter output signals, in response to a second counting enable signal based on the first comparison signal and a second comparison signal during a fine counting interval which follows the coarse counting interval. | 01-29-2015 |
20150028191 | IMAGE SENSOR UNIT AND IMAGE READING DEVICE - A contact-type image sensor is designed to prevent, in an effective manner, dust from entering into a space between a rod lens array and a light receiving sensor. A rod lens array includes a large number of rod lenses between two flat substrates and between spacers located at left and right ends; one row of the rod lenses is arranged in such a way that central axes of the rod lenses become parallel to each other. At an emission side of a rod lens in an axis line direction, each substrate includes an extension portion, whose length is determined based on an operating distance of the rod lens. A lower end of the extension portion of each substrate is in contact with an upper surface of a sensor substrate. In this manner, the rod lens array is positioned with high accuracy with respect to the light receiving sensor. | 01-29-2015 |
20150034802 | ENDOSCOPE - An endoscope is provided having a first beam path formed at least in a distal end region, a second beam path formed at the end region, which second beam path is arranged offset with respect to the first beam path for recording a stereoscopic image, and an image recording chip, which is configured for electronically recording images captured via the first beam path and the second beam path. A beam deflection device is provided having at least one deflection element arranged for displacement along a straight line adjustment travel path between a first position and a second position, and the beam deflection device, in the first position, guides an image captured using the first beam path to the image recording chip and, in the second position, guides an image captured using the second beam path to the image recording chip. | 02-05-2015 |
20150034803 | IMAGE SENSOR AND METHOD OF DRIVING THE SAME - Provided are an image sensor and a method of driving the same. The image sensor includes n optical black pixels which are arranged in the same horizontal line; and m comparators which are matched with the n optical black pixels, wherein n is a natural number greater than or equal to two, and m is a natural number greater than n. | 02-05-2015 |
20150041625 | TIME TO DIGITAL CONVERTER AND APPLICATIONS THEREOF - A time to digital converter includes a sample module operable to sample an input signal at multiple different instances of time. A transition detection module, formed of comparison elements, processes the sampled input signal at successive time instances so as to detect transitions in the input signal in terms of time. An output module generates detected transitions in the input signal on multiple parallel outputs. | 02-12-2015 |
20150041626 | Method and Apparatus for Control of a Dual Matrix Sensor Array - The subject matter disclosed herein describes an optical sensor used in a safety system. The sensor includes two pixel matrices on a single substrate. Each of the pixel matrices are arranged in a row and column format, and pixels from one matrix are interspersed with pixels from the other matrix such that alternating pixels in each row and column belong to separate matrices. Two sets of selection logic allow each matrix to be enabled separately. Additional monitoring logic is included to detect shorted pixels and/or shorted selection lines. In addition, the frames generated by each pixel array may be compared to detect variation in performance between arrays. | 02-12-2015 |
20150048239 | PHOTODIODE ARRAY FOR SPECTROMETRIC MEASUREMENTS AND SPECTROMETRIC MEASUREMENT SYSTEM - A plurality of photodiodes arrayed in a one-dimensional form are divided into a plurality of groups. The structure of an antireflection coating is changed for each group so that all the surfaces of the photodiodes belonging to each group are covered with an antireflection coating having a transmittance characteristic which shows a maximum transmittance within a range of wavelengths of light to be received by those photodiodes. In particular, a SiO | 02-19-2015 |
20150048240 | IMAGING APPARATUS AND ELECTRONIC APPARATUS - An imaging apparatus includes: an interposer on which an image sensor including a light reception section is disposed; a translucent member that is provided on the light reception section; and a mold that is formed in sides of the interposer having a rectangular shape and bonded to the translucent member to support the translucent member, the mold including a seal surface that is bonded to the translucent member, the seal surface being provided with a protrusion. | 02-19-2015 |
20150053844 | ROD LENS ARRAY AND IMAGE SENSOR HEAD THAT USES SAME - The purpose of the present invention is to provide a rod lens array, which has a deep depth of focus and a small depth of focus spot. The present invention provides a rod lens array that is equipped with at least one line of rod lenses between two substrates, said line of rod lenses having a plurality of columnar rod lenses wherein the refractive index decreases toward the outer periphery from the center, said rod lenses being arranged in such a manner that the center axes of the rod lenses are substantially parallel to each other. The rod lens array is characterized in that the average value (DOFave) of the depth of focus (DOF) is at least 0.9 mm, and the depth of focus spot (DOFcv) in the scanning direction of the line of rod lenses is not more than 12%. | 02-26-2015 |
20150053845 | PHOTOGRAPHING DEVICE AND FOCUS ADJUSTING SEAT THEREOF - A focus adjusting seat includes a base seat, at least one guide bar, a driving device and an image sensor adjusting seat. The base seat includes a bottom plate and a front plate connected to the bottom plate and having a lens installation hole. Two ends of the at least one guide bar are disposed on the bottom plate, respectively. The driving device is disposed on the bottom plate and has an output screw. The image sensor adjusting seat includes a bottom seat and an image sensor installation part connected to the bottom seat and facing toward the lens installation hole. The bottom seat has a screwed part screwed to the output screw and at least one guide groove movably assembled with at least one guide bar. The driving device is adapted to adjust a relative position between the image sensor adjusting seat and the lens installation hole. | 02-26-2015 |
20150053846 | IMAGE SENSOR WITH 3D STACK STRUCTURE - Disclosed is an image sensor with a 3D stack structure, in which pixels of a top plate are realized as image pixels and pixels of a bottom plate are realized as pixels for realizing a phase difference AF, so that the phase difference AF is realized without loss of resolution. In the image sensor with a 3D stack structure, a problem of the reduction of resolution, which is a disadvantage of an existing imaging surface phase difference AF device, is solved, so that a fast phase difference AF is realized while maintaining high resolution without a separate phase difference AF module. | 02-26-2015 |
20150060642 | PHOTOVOLTAIC SENSOR ARRAYS - A photovoltaic sensor array for detecting variations in light intensity is disclosed. The array has a plurality of photo voltaic cells which are electrically independent from one another and formed on a common substrate. Each cell has corresponding positive and negative electrical connections and each cell is arranged to detect light intensity so that variations in light intensity between the cells can be obtained. | 03-05-2015 |
20150060643 | Methods and Systems for In Situ Calibration of Imaging in Biological Analysis - Software, methods, and systems for calibrating photometric devices are provided. These involve using a non-uniform test illumination field to approximate a photon transfer curve by calculating stable pixel values and statistical dispersions on a pixel-by-pixel basis. | 03-05-2015 |
20150060644 | IMAGING ELEMENT AND IMAGING APPARATUS - An imaging element includes a laminated plurality of photoelectric conversion units, and an input light reflecting unit which reflects light beams input from the plurality of photoelectric conversion units toward directions of the plurality of photoelectric conversion units. | 03-05-2015 |
20150060645 | METHOD, APPARATUS AND COMPUTER PROGRAM PRODUCT FOR SENSING OF VISIBLE SPECTRUM AND NEAR INFRARED SPECTRUM - In accordance with an example embodiment a method, apparatus and computer program product are provided. The method comprises filtering incident light by an IR cut-off filter to generate filtered light. The IR cut-off filter comprises a plurality of pixels with pass-band characteristics for visible light wavelengths and is configured to perform stop-band attenuation of near infrared (NIR) wavelengths. The stop-band attenuation is configured to vary based on spatial location of pixels within the IR cut-off filter. The filtered light received from the IR cut-off filter is sensed by the image sensor to generate sensed light. A baseband signal and a modulated NIR signal are determined by performing transformation of the sensed light. A NIR spectrum associated with the incident light is determined by demodulating the modulated NIR signal. A visible spectrum associated with the incident light is determined based on the NIR spectrum and the baseband signal. | 03-05-2015 |
20150060646 | IMAGE SENSORS AND IMAGE PROCESSING SYSTEMS INCLUDING THE SAME - Image sensors and image processing systems including the image sensors are provided. The image sensors may include a signal transmission circuit including a swing width control circuit configured to control a swing width of a signal using feedback. | 03-05-2015 |
20150069217 | Imaging Cell Array Integrated Circuit - A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes. | 03-12-2015 |
20150069218 | IMAGE DEVICE INCLUDING DYNAMIC VISION SENSOR, AMBIENT LIGHT SENSOR AND PROXIMITY SENSOR FUNCTION - An image device including a pixel array and a controller, The pixel array having first pixels and second pixels and corresponding channel drivers. The controller may perform operations of a dynamic vision sensor (DVS), an ambient light sensor (ALS) and a proximity sensor (PS). | 03-12-2015 |
20150069219 | MONITORING DEVICE, TERMINAL, AND MONITORING SYSTEM FOR MONITORING THE ENVIRONMENT - The invention relates to a monitoring device ( | 03-12-2015 |
20150076321 | Amplifier Adapted for CMOS Imaging Sensors - A column readout amplifier and imaging an | 03-19-2015 |
20150076322 | Sensor And Method For Color Photosensor Array With Shielded, Deep-Penetration, Photodiodes For Color Detection - A photosensor has a masking layer having an opening over a central photodiode and a first adjacent photodiode, the first adjacent photodiode covered by the masking layer and located sufficiently near the central photodiode that at least some light admitted through the opening over the central photodiode reaches the first adjacent photodiode through the central photodiode. The photosensor also has a second adjacent photodiode; the second adjacent photodiode covered by the masking layer and located sufficiently near the first adjacent photodiode that at least some light admitted through the opening over the central photodiode is capable of reaching the second adjacent photodiode through the first adjacent photodiode. Circuitry is provided for reading the photodiodes and generating a blue, a green, and a red channel signal by processing signals read from the photodiodes. | 03-19-2015 |
20150076323 | SOLID STATE IMAGING ELEMENT, DRIVING METHOD OF SOLID STATE IMAGING ELEMENT, AND ELECTRONIC APPARATUS - A solid state imaging element including a drive circuit and a pixel unit with pixels arranged in a matrix form. The pixels include a photoelectric conversion element configured to convert light incident thereupon into a charge and to accumulate the charge, a charge holding unit connected to the photoelectric conversion element, and a floating diffusion region. The drive circuit transfers a first portion of the charge accumulated in the photoelectric conversion element to the charge holding unit and concurrently transfers a second portion of the charge accumulated in the photoelectric conversion element to the floating diffusion region. Electronic global shutter is realized by transferring charge from the photoelectric conversion elements of each of the pixels at substantially the same time. | 03-19-2015 |
20150076324 | INTEGRATED CIRCUIT AND IMAGE SENSOR COMPRISING SAME - An integrated circuit comprises a first signal transfer block comprising first through (M)-th aligning blocks that are cascade-coupled to produce first aligned control signals through (M)-th aligned control signals, respectively, by aligning first control signals with a clock signal, wherein M is an integer greater than one, and a functional block divided into first through (M)-th sub-functional blocks configured to perform a same function in parallel, each of the first through (M)-th sub-functional blocks operating according to corresponding ones of the first aligned control signals through (M)-th aligned control signals generated by the first through (M)-th aligning blocks. | 03-19-2015 |
20150076325 | RAMP GENERATOR CIRCUIT AND SOLID-STATE IMAGING DEVICE - A ramp generator circuit includes: a reference signal generator circuit which generates a ramp waveform having a slope obtained by multiplication using a power of 2 according to a value of a higher order bit of a gain control signal; a clock control circuit which selectively outputs 2̂m kinds of fractional-N clocks according to one of 2̂m (natural number) areas obtained by dividing a code range represented by a lower order bit, when a negative gain is set; and a variable gain circuit which sets a ramp waveform according to the value of the gain control signal, and sets a ramp signal amplitude in each area so that a period ratio between ramp driving clocks for adjacent areas and a ratio between an amplitude of a ramp signal when the standard gain is set and a largest amplitude of a ramp signal are equal. | 03-19-2015 |
20150076326 | SOLID-STATE IMAGING DEVICE - A pixel array in a solid-state imaging device includes first and second signal lines provided for each column. A pixel belongs to a first or second group on a row-by-row basis and includes a photoelectric conversion film, a FD line for accumulating signal charge, and an amplifier transistor for providing a voltage according to the signal charge. The pixel in the first group further includes a selection transistor for proving output voltage of the amplifier transistor to the first signal line, and the pixel in the second group further includes a selection transistor for proving output voltage of the amplifier transistor to the second signal line. The first signal line is disposed between the FD line in the first group and the second signal line, and the second signal line is disposed between the FD line in the second group and the first signal line. | 03-19-2015 |
20150076327 | SOLID-STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME, AND IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixel cells arranged in a pixel array unit, a vertical signal line and a pixel power supply line each connected to a source electrode and a drain electrode of an amplifying transistor, a Pch transistor for supplying potential AVDD to the vertical signal line, a Pch transistor for supplying potential PBIAS_H higher than the potential AVDD to the vertical signal line, a Pch transistor for supplying the potential PBIAS_H to the pixel power supply line, wherein while the transfer transistor is turned ON and transfers signal charges photoelectrically converted by a photodiode to the floating diffusion portion, the Pch transistors are turned ON and the potential PBIAS_H is applied to the vertical signal line and the pixel power supply line. | 03-19-2015 |
20150083892 | THERMAL-CONTRACTION MATCHED HYBRID DEVICE PACKAGE - A hybrid device package comprising a baseplate, a balanced composite structure (BCS) on the baseplate, a first IC on the BCS, and at least one additional IC physically coupled to the first IC. The coefficient of thermal expansion (CTE) for the stack formed from the B CS and the first IC is arranged to be approximately equal to that of the baseplate, thereby reducing the thermal stress to which the at least one additional IC is subjected when cooled to its operating temperature which might otherwise result in physical damage to the IC. The baseplate is preferably an alumina ceramic baseplate. In one embodiment, the first IC is a readout IC (ROIC), the at least one additional IC is a detector array IC which is on the ROIC, and the hybrid device package is a focal plane array (FPA). | 03-26-2015 |
20150083893 | Method And Device For Preserving and Imaging Specimens While Retaining Information On The Spatial Orientation Of Specimens With Respect To Reference Objects - An object, such as a tumor from a breast lumpectomy, is placed into an object positioning device that can hold the object without deforming it. Such a device can include a container with a deformable foam, gel, or other material. The object positioning device is moved into an imaging device. Images of the object within the object positioning device are acquired by the imaging device. The acquired images are stored, processed, or output on a display device. Information about the spatial orientation of the object with respect to a reference object is preserved. | 03-26-2015 |
20150083894 | Imaging Device with Filtering of the Infrared Radiation - An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation. | 03-26-2015 |
20150083895 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprising a plurality of pixels generating a photoelectric conversion signal, a column amplifying unit corresponding to columns of the pixels, for outputting a first and second signals generated by amplifying the photoelectric conversion signal at a smaller first gain and larger second gain respectively, an analog to digital converter ( | 03-26-2015 |
20150090862 | LENS AND MANUFACTURING METHOD FOR THE SAME - A lens reflecting a light of a predetermined wavelength, or transmitting and condensing or diverging the light is provided. The lens includes a substrate, and
| 04-02-2015 |
20150090863 | Stacked Photodiodes for Extended Dynamic Range and Low Light Color Discrimination - The invention provides the art with novel image sensor pixel designs comprising stacked, pinned photodiodes. The stacked pinned photodiodes provide pixels with greatly increased dynamic range. The stacked pinned photodiodes also allow improved color discrimination for low light imaging, for example utilizing pixels with no overlaying color filter array. | 04-02-2015 |
20150097106 | OPTICAL LENS FOR CAPTURING IMAGE AND IMAGE CAPTURE MODULE - The invention discloses an optical lens for capturing image and an image capture module. In order from an object side to an image side, the optical lens along the optical axis comprises a first lens element with positive refractive power having a convex object-side surface; a second lens element with positive refractive power having a convex image-side surface; a third lens element with negative refractive power having a convex image-side surface and a concave object-side surface; a fourth lens element with refractive power having a convex object-side surface, both the object-side surface and the image-side surface of the fourth lens element are aspheric; a fifth lens element with refractive power having a concave image-side surface, and at least one of the image-side surface and object-side surface has at least one inflection point. The optical lens can reduce the sensitivity for use in compact cameras with camera functionalities. | 04-09-2015 |
20150097107 | APPARATUS FOR GENERATING EXTREME ULTRAVIOLET LIGHT USING PLASMA - Disclosed is an apparatus for generating EUV light by means of plasma, the apparatus comprising: a laser source for outputting laser; a tunable laser mirror (TLM) for reflecting laser beams from the laser source; a focusing mirror (FM) for focusing the laser beams reflected from the TLM; a gas cell for generating EUV light by forming a plasma from the laser beams and reaction gas, the laser being incident on the gas cell after being focused on the TM, and the reaction gas being supplied by a gas supply line for a plasma-induced path corresponding to a section on the gas cell in which the focal point of the incident laser occurs; and a vacuum chamber for accommodating the TLM, FM and the gas cell in a state of vacuum. The present invention having features as discussed has the benefit of allowing simple but effective generation of EUV light. | 04-09-2015 |
20150097108 | Method and Apparatus to Use Array Sensors to Measure Multiple Types of Data at Full Resolution of the Sensor - An actuator is configured to move a sensor array between first and second positions in order to provide color image data and other data with full resolution of the sensor array. In many embodiments, the output resolution of the sensor array for each type of data comprises twice the resolution of the sensor array without movement. The alternating movement of the sensor array between the first and second positions provides output images with decreased artifacts that might otherwise be present without the alternating movement of the sensor array. | 04-09-2015 |
20150102206 | READOUT CIRCUIT FOR IMAGE SENSORS - The present description relates to a readout circuit for digitizing an analog input signal of an imaging device into a digital output. The readout circuit comprises a pixel signal input for providing an analog signal from at least one imaging pixel element, a variable gain amplifier for providing an amplified signal of the analog signal by a gain factor, and a first analog to digital conversion means for quantizing the analog signal into a first digital signal. The circuit further comprises a control means for setting the gain factor of the variable gain amplifier by taking into account the first digital signal, and a second analog to digital conversion means for quantizing the amplified signal into a second digital signal. The circuit also comprises a digital output for outputting a signal determined as function of at least the second digital signal. | 04-16-2015 |
20150102207 | DISPLAY DEVICE AND METHOD FOR DRIVING DISPLAY DEVICE - A display device includes a pixel which includes a first photosensor portion having a first photodiode for detecting visible light, which is provided together with a display element portion; and a pixel which includes a second photosensor portion having a second photodiode for detecting infrared rays, which is provided together with another display element portion. The second photosensor portion detects infrared rays included in external light, and selects an imaging element and adjusts sensitivity in accordance with the amount of infrared rays detected by the second photosensor portion. | 04-16-2015 |
20150108328 | SYSTEM AND METHOD FOR COMPENSATING DARK CURRENT - A compensating current is applied at one or more points in a signal processing path to compensate for one or both of a dark or offset current present in an input signal. In certain implementations, the dark or offset current is present in a signal generated by a photomultiplier device. The dark or offset current may be monitored in an output of the signal processing path and, the monitoring being used to determine how much compensation is needed in the signal processing path and to allocate where in the signal processing path the compensation current will be applied. | 04-23-2015 |
20150108329 | IMAGE SENSOR, OPERATING METHOD THEREFOR, AND ELECTRONIC DEVICE - An image sensor includes: a plurality of light-receiving elements that receive light from a subject and are arranged in a 2-dimensional form; a detection unit that detects a movement amount of a projected image of the subject projected to the plurality of light-receiving elements arranged in the 2-dimensional form; and a light-receiving element control unit that adaptively controls a timing at which pixel data is read from the plurality of light-receiving elements arranged in the 2-dimensional form for each line according to the movement amount. | 04-23-2015 |
20150108330 | IMAGE TAKING DEVICE AND CAMERA SYSTEM - An image sensor includes a plurality of pixels, a plurality of sense circuits, and a count circuit. Each sense circuit is configured to read out electrical signals from at least one pixel associated with the sense circuit in order to generate data representing whether or not photons have been received by the sense circuit. The count circuit is in communication with a sense circuit selected from the plurality of sense circuits. The count circuit is configured to provide integration results for the pixels associated with the sense circuits based on the data received from the sense circuits. | 04-23-2015 |
20150108331 | METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND ELECTRONIC APPARATUS - Disclosed herein is a method for manufacturing a solid-state imaging element, the method including forming lenses that are each provided corresponding to a light receiving part of a respective one of a plurality of pixels arranged in an imaging area over a semiconductor substrate and collect light onto the light receiving parts; forming a light blocking layer by performing film deposition on the lenses by using a material having light blocking capability; and forming a light blocker composed of the material having light blocking capability at a boundary part between the lenses adjacent to each other by etching the light blocking layer in such a manner that the material having light blocking capability is left at the boundary part between the lenses. | 04-23-2015 |
20150115131 | STACKED CHIP SPAD IMAGE SENSOR - An example imaging sensor system includes a Single-Photon Avalanche Diode (SPAD) imaging array formed in a first semiconductor layer of a first wafer. The SPAD imaging array includes an N number of pixels, each including a SPAD region formed in a front side of the first semiconductor layer. The first wafer is bonded to a second wafer at a bonding interface between a first interconnect layer of the first wafer and the second interconnect layer of the second wafer. An N number of digital counters are formed in a second semiconductor layer of the second wafer. Each of the digital counters are configured to count output pulses generated by a respective SPAD region. | 04-30-2015 |
20150115132 | VISIBLE AND NEAR INFRA RED OPTICAL SENSOR - A detector for detecting visible and NIR electromagnetic radiation is disclosed. The aforesaid detector comprises: (a) a substrate made of conventional temperature grown semi-insulating gallium arsenide (GaAs); (b) an active layer; and (c) means for applying electric fields to the active layer. The active layer is made of low temperature grown semi-insulating GaAs or made of ion implanted conventional temperature grown semi insulating GaAs. Also disclosed an imager based on monolithically integrated array of detectors and read-out integrated circuit (ROIC). | 04-30-2015 |
20150115133 | IMAGER MODULE FOR A CAMERA AND MANUFACTURING METHOD FOR SUCH AN IMAGER MODULE - An imager module for a camera includes: a lens holder; a lens system which is accommodated in the lens holder and has a lens mount and at least one lens accommodated in the lens mount; and an image sensor; a rear lens area being formed between the image sensor and the at least one lens of the lens system; and an optically transparent, flexible coupling element provided in the rear lens area. | 04-30-2015 |
20150115134 | STACKED-CHIP IMAGING SYSTEMS - Imaging systems may be provided with stacked-chip image sensors. A stacked-chip image sensor may include a vertical chip stack that includes an array of image pixels, analog control circuitry and storage and processing circuitry. The array of image pixels, the analog control circuitry, and the storage and processing circuitry may be formed on separate, stacked semiconductor substrates or may be formed in a vertical stack on a common semiconductor substrate. The image pixel array may be coupled to the control circuitry using vertical metal interconnects. The control circuitry may route pixel control signals and readout image data signals over the vertical metal interconnects. The control circuitry may provide digital image data to the storage and processing circuitry over additional vertical conductive interconnects coupled between the control circuitry and the storage and processing circuitry. The storage and processing circuitry may be configured to store and/or process the digital image data. | 04-30-2015 |
20150115135 | SOLID-STATE IMAGING APPARATUS - There is a need to provide a solid-state imaging apparatus capable of highly accurately analog-to-digital converting an analog voltage output from a pixel circuit. The solid-state imaging apparatus supplies a counter code to an integral A/D converter. The counter code CD includes 3-phase clock signals and gray signals. The clock signals each have a cycle equal to specified cycle multiplied by 8 and allow phases to shift from each other by specified cycle. The gray signals linearly increase count values at a cycle equal to specified cycle multiplied by 4. The counter code reverses only the logical level of a signal when a count value changes. A count value error can be limited to a minimum. | 04-30-2015 |
20150115136 | SOLID-STATE IMAGING DEVICE - In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate. | 04-30-2015 |
20150122971 | 3D STACKED IMAGE SENSOR - An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels. Each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, and a reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of the reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die. | 05-07-2015 |
20150122972 | IMAGING APPARATUS - An imaging apparatus capable of outputting high-quality images at high frame rate by partial readout while suppressing a difference among output signals from the output units is provided. The apparatus includes: an imaging element including an effective pixel region having a plurality of adjacent unit regions each including a plurality of pixels for converting a subject image into imaging signals, and a plurality of output units provided for the respective unit regions and outputting the imaging signals; a region-of-interest setting unit setting a region of interest for the subject image; a readout-region setting unit setting a region including the region of interest and axisymmetric about a boundary between the unit regions as a readout region; and a drive control unit driving the imaging element to read out imaging signals of the pixels included in the readout region, and to sweep out those in the other regions. | 05-07-2015 |
20150122973 | SENSING PIXEL AND IMAGE SENSOR INCLUDING THE SAME - Disclosed are a sensing pixel and an image sensor including the same. The sensing pixel includes a determination region, which includes one or more floating body transistors, and an integration region that is adjacent to a floating body region of one of the one or more floating body transistors, absorbs light to generate an electron-hole pair including an electron and a positive hole, and transfers the electron or the positive hole to the floating body region of the one floating body transistor. | 05-07-2015 |
20150122974 | Imaging Array with Improved Dynamic Range Utilizing Parasitic Photodiodes - A pixel sensor having a main photodiode and a parasitic photodiode and a method for reading out that pixel sensor are disclosed. The parasitic photodiode also serves the function of a floating diffusion node in the pixel. The pixel sensor is read by first determining the exposure as measured by the parasitic photodiode and then determining the exposure as read by the main photodiode. One of the two exposure measurements is chosen as the pixel output. The main photodiode has a light conversation efficiency chosen such that one of the two measurements will provide a measurement of the exposure over a dynamic range that is greater than that of either the main photodiode or the parasitic photodiode utilized separately. | 05-07-2015 |
20150122975 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises a plurality of matrix pixels, a reference signal generator for generating a ramp signal, a counter for performing counting according to the ramp signal output, and an AD converter, arranged for each pixel column, for performing AD conversion by comparing a pixel signal from the pixel with the ramp signal. Further, the AD converter includes a comparator to which the pixel signal and the reference signal are input, a storage for storing the AD conversion result, and an slope converter, between the output terminal of the reference signal generator and the input terminal of the comparator, for changing a gradient of the ramp signal, so that the noise overlaid on the ramp signal changes depending on the gradient of the ramp signal. Thus, it is possible to prevent generation of a horizontal-line noise in the ramp signal. | 05-07-2015 |
20150122976 | SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM - A solid-state imaging device and a camera system are disclosed. The solid-state imaging device includes a pixel unit and a pixel signal readout circuit. The pixel signal readout circuit includes a plurality of comparators disposed to correspond to a pixel column array, and a plurality of counters. Each counter includes a first amplifier, a second amplifier, and a mirror circuit to from a current mirror in parallel with the second amplifier. The first amplifier includes differential transistors, initializing switches connected between gates and collectors of the differential transistors, and first and second capacitors connected to each of the gates of the differential transistors. The second amplifier includes an initializing switch and a third capacitor. The mirror circuit includes a gate input transistor whose gate is inputted with a voltage sampled by the first amplifier or a voltage sampled by the second amplifier. | 05-07-2015 |
20150129746 | MULTI-COLOR SUPERPIXEL OPERATIONAL CONSTRUCTS FOR FOCAL PLANE ARRAYS - A method for sensing using a multi-band photovoltaic detector, the method including biasing the photovoltaic detector using a bias voltage at a mid-point of a detector substrate bias voltage range, selecting a first band of the multi-band photovoltaic detector, sensing a first current from a first diode of the multi-band photovoltaic detector, the first diode being associated with the first band, selecting a second band of the multi-band photovoltaic detector; and sensing a second current from a second diode of the multi-band photovoltaic detector, the second diode being associated with the second band. | 05-14-2015 |
20150129747 | STACKED PHOTODIODE MULTISPECTRAL IMAGER - A photodiode architecture comprises first, second, and third independent photodiodes, and a shared electrode. The first, second, and third photodiodes are each connected to respective sources of bias voltage and to a common shared electrode, whereby the photodiode architecture comprises at least one of a shared anode and shared cathode photodiode architecture. The photodiode architecture selectively reverse biases the first, second, and third photodiodes so that, during operation, at least one of the first, second and third photodiodes is always operating in a photoconducting mode, to enable capture and storage of charge from any photodiode in the architecture operating in photoconducting mode. Advantageously, the first photodiode can be configured to respond to a first wavelength of light and at least one of the second and third photodiodes can be configured to be responsive to a respective second or third wavelength of light shorter than the first wavelength of light. | 05-14-2015 |
20150129748 | Multiple Data Rate Counter, Data Converter including the Same, and Image Sensor Including the Same - A counter includes a buffer unit and a ripple counter. The buffer unit generates at least one least significant signal of a count by buffering at least one clock signal until a termination time point. The ripple counter generates at least one most significant signal of the count by sequentially toggling in response to at least one of the least significant signal. The counter performs multiple data rate counting with enhance operation speed and reduced power consumption. | 05-14-2015 |
20150136949 | STRUCTURED ILLUMINATION MICROSCOPY OPTICAL ARRANGEMENT INCLUDING PROJECTION ARTIFACT SUPRESSION ELEMENT - A structured illumination microscopy optical arrangement includes a projection path and an imaging path. The imaging path includes an imaging sensor and imaging optical elements. The projection path includes a light generator, a pattern generating element such as a spatial light modulator (SLM), and projection optical elements including an output lens and a projector artifact suppression element (PASE) located in the projection path between the SLM and the output lens. The PASE may include birefringent material which splits respective light rays of the structured illumination pattern source light to provide at least one replication of the structured illumination pattern with an offset transverse to the projection path. The offset replication of the structured illumination pattern increases the accuracy of the system by reducing spatial harmonic errors and spurious intensity variations due to projector pixel gap artifacts which may otherwise produce errors in resulting Z-height measurements. | 05-21-2015 |
20150136950 | TWO IMAGER PROJECTION DEVICE - The present disclosure describes optical elements and optical devices that use the optical elements to allow the output of two imagers to be combined onto a single optical axis. Each of the two imagers can be based on alternate polarization directions, and the disclosed embodiments can enable high contrast 3D projectors without requiring either time or polarization sequencing. The present disclosure further describes projection systems that include the optical devices. | 05-21-2015 |
20150136951 | IMAGE SENSOR - An image sensor including: light guides for irradiating light onto an irradiated object; a lens that focuses reflected light that was reflected by the irradiated object; a sensor that receives the reflected light that was focused by the lens; and a housing. The housing houses or holds the light guides, the lens, and the sensor, and is formed by integrating a housing metal portion and a housing resin portion. | 05-21-2015 |
20150136952 | NOISE REMOVING DEVICE AND IMAGING DEVICE - According to an embodiment, a noise removing device includes a first difference detector and a second difference detector. The first difference detector detects a difference between a first reset signal at a first timing and a second reset signal at a second timing after a predetermined period of time has elapsed from the first timing. The second difference detector subtracts the difference detected by the first difference detector from a main signal between the first reset signal and the second reset signal, and outputs a subtraction result. | 05-21-2015 |
20150136953 | APPARATUS FOR CONTROLLING PIXEL OUTPUT LEVEL AND IMAGE SENSOR HAVING THE SAME - An apparatus for controlling a pixel output level includes a column signal line connected to an output node of at least one pixel sensor. The apparatus includes a load circuit is connected between the column signal line and a ground terminal. The apparatus also includes a level adjusting circuit configured to adjust a voltage level of a pixel signal output from the at least one pixel sensor to the column signal line based on a correction target value. | 05-21-2015 |
20150136954 | Apparatus and Methods for Hyperspectral Imaging with Parallax Measurement - An apparatus and corresponding method for line-scan imaging includes a 2D array of light-sensitive detector elements divided into a plurality of sub-arrays. An electrical circuit can be configured to determine a correction for parallax based on detector element values from at least two rows of parallax detecting elements to enable images captured by the sub-arrays to be co-aligned with each other. The 2D array and parallax detecting elements can be located on the same substrate chip. Image data from sub-arrays can be co-aligned with each other based on parallax data from the parallax detecting elements and used to produce hyperspectral images corrected for parallax. | 05-21-2015 |
20150136955 | Apparatus and Methods for Hyperspectral Imaging with On-Chip Digital Time Delay and Integration - An apparatus and corresponding method for line-scan imaging can include a 2D array of light-sensitive detector elements that detect light from a target scene. The 2D array can be divided into a plurality of sub-arrays and supported by an analog amplification and signal conditioning module portion of a read-out integrated circuit (ROIC), the analog module having one or more replicated amplification and signal conditioning circuits in communication with the 2D array detector elements. An analog-to-digital (A/D) conversion electrical circuit module and one or more digital time-delay and integration (TDI) modules can be situated in a portion of the ROIC not supporting the 2D array. The TDI modules can perform TDI of the detector sub-arrays. Embodiments enable hyperspectral images to be obtained with greater imaging range and higher signal-to-noise ratios. | 05-21-2015 |
20150136956 | ULTRA LOW READOUT NOISE ARCHITECTURE - A method to read out pixels includes reading a first pixel by resetting a first photodetector, integrating the first photodetector after resetting the first photodetector, resetting a first floating diffusion node coupled to the first photodetector and a second floating diffusion node coupled to a second photodetector, transferring charge from the first photodetector to the first floating diffusion node, comparing a first signal at the first floating diffusion node and a second signal at the second floating diffusion node and generating a first signal to latch a first counter value when the first signal is less than the second signal, incrementing the first signal and decrementing the second signal, and comparing the first signal and the second signal and generating a second signal to latch a second counter value when the first signal is greater than the second signal, wherein the difference between the second counter value and the first counter value indicates a first pixel level. | 05-21-2015 |
20150144768 | OPTICAL NAVIGATION SYSTEM AND DETECTION METHOD THEREOF ADAPTED FOR AMBIENT LIGHT AND LIFTOFF DETECTION - There is provided an optical navigation system including a light source, a first photosensitive unit, a second photosensitive unit, a control unit and a processing unit. The light source is configured to emit light of a predetermined wavelength. The first photosensitive unit is configured to receive reflected light of the predetermined wavelength reflected by a working surface. The second photosensitive unit is covered with a coating to block light of the predetermined wavelength. The control unit is configured to control the light source, the first photosensitive unit and the second photosensitive unit to expose both the first photosensitive unit and the second photosensitive unit when the light source is turned on. The processing unit is configured to read first image data and second image data respectively from the first photosensitive unit and the second photosensitive unit thereby identifying an ambient light mode or a liftoff mode. | 05-28-2015 |
20150144769 | INSPECTION APPARATUS AND INSPECTION METHOD - An inspection apparatus and an inspection method capable of performing an inspection more accurately are provided. An inspection apparatus according to the present invention includes a light source | 05-28-2015 |
20150144770 | MULTISPECTRAL IMAGER WITH HYBRID DOUBLE LAYER FILTER ARRAY - Hybrid dual layer filter can be employed can be employed as filters. A multispectral imager comprises a two layer filter array monolithically integrated onto detector array, a top layer of pigment based filter and a lower layer of plasmonic nano-optic filter to make a low cost and narrow bandwidth filter without side leaking or side peaks. Multispectral imager comprises a microlens array, a mosaic patterned optical filter array underlying the microlens array and including a two-dimensional repetition of a unit mosaic pattern, and a pixelated detector array underlying the mosaic patterned optical filter array. The unit mosaic pattern comprises an array of composite filter elements having different peaks in a respective transmittance spectrum. Each composite filter element comprises a pigment based filter portion and a plasmonic nano-optic filter portion. | 05-28-2015 |
20150144771 | IMAGING APPARATUS - An imaging apparatus includes a clock generation unit that generates a plurality of phase signals having phases different from one another, a signal transmission unit provided to correspond to the plurality of phase signals and having a plurality of signal transmission circuits, and a latch unit having a plurality of latch circuits that latches the phase signals transmitted by the signal transmission unit at a timing of an end of a comparison process performed by a comparison unit. A configuration of the signal transmission circuit that transmits a first phase signal is substantially the same as a configuration of the signal transmission circuit that transmits a second phase signal different from the first phase signal. A configuration of the latch circuit that latches the first phase signal is substantially the same as a configuration of the latch circuit that latches the second phase signal. | 05-28-2015 |
20150295004 | IMAGE SENSOR MODULE AND METHOD FOR ADJUSTING FOCUS OF IMAGE SENSOR MODULE - An image sensor module includes a substrate, an image sensor mounted on the substrate, a holder position on the substrate, a lens barrel for holding a lens module and at least one spring. The spring is positioned between the holder and the lens barrel, and the spring exerts forces on the holder and the lens barrel; and the lens barrel has at least one hole, and a screw penetrates through the hole and is screwed into the holder. | 10-15-2015 |
20150296162 | SEMICONDUCTOR DEVICE, METHOD FOR DRIVING SEMICONDUCTOR DEVICE, AND METHOD FOR DRIVING ELECTRONIC DEVICE - To provide a solid-state imaging device with short image-capturing duration. A first photodiode in a pixel in an n-th row and an m-th column is connected to a second photodiode in a pixel in an (n+1)-th row and the m-th column through a transistor. The first photodiode and the second photodiode receive light concurrently, the potential in accordance with the amount of received light is held in a pixel in the n-th row and the m-th column, and the potential in accordance with the amount of received light is held in a pixel in the (n+1)-th row and the m-th column without performing a reset operation. Then, each potential is read out. Under a large amount of light, either the first photodiode or the second photodiode is used. | 10-15-2015 |
20150303231 | Color Filter And Photodiode Patterning Configuration - An imaging device that includes an array of photo detectors each configured to generate an electrical signal in response to received light, and an array of color filters disposed over the array of photo detectors such that the photo detectors receive light passing through the color filters. Each of the color filters has a color transmission characteristic, which vary. To even out color balance, some of the color filters are disposed over a plurality of the photo detectors while others are disposed over only one of the photo detectors. Additional color balance can be achieved by varying the relative area sizes of the color filters and underlying photo detectors based on color transmission characteristics, to compensate for the varying absorption coefficient of the photo detectors at different colors. | 10-22-2015 |
20150303937 | ANALOG-DIGITAL CONVERTING DEVICE AND METHOD AND IMAGE SENSOR INCLUDING THE SAME - An analog-digital converting device includes a successive approximation register (SAR) analog-digital converting circuit suitable for resolving upper N-bits for an input signal, a single-slope (SS) analog-digital converting circuit suitable for resolving lower M-bits for the input signal after the SAR analog-digital converting circuit resolves the upper N-bits, and a combining circuit suitable for combining the upper N-bits and the lower M-bits. | 10-22-2015 |
20150304581 | IMPEDANCE READOUT CIRCUIT AND METHOD - An impedance readout circuit receives an input signal from a pixel, or an array of pixels. The circuit includes an amplifier to amplify the input signal and detects a DC component of the input signal. The circuit establishes an AC sampling voltage at the output of the amplifier enabling a filter of the circuit to determine an AC current component of the amplifier output. The AC current component is inversely proportional to the output impedance of the pixel. | 10-22-2015 |
20150304585 | SOLID-STATE IMAGING APPARATUS AND METHOD OF CONTROLLING THE SAME - A solid-state imaging apparatus comprises a pixel array, a first column output line provided for each column of the pixel array, a first constant current source, a scanning unit configured to select the pixel portions for each row, and a current control unit configured to control current values, wherein the scanning unit can switch between a normal readout mode and a mixing readout mode, and in the mixing readout mode, the current control unit controls the current values of the first column output lines so that the current value of the first column output line to which the signals of at least one color are simultaneously output is smaller than the current value of the first column output line to which the signals of another color are simultaneously output. | 10-22-2015 |
20150308949 | METHOD AND APPARATUS TO MITIGATE RIPPLE IN A TIME OF FLIGHT (TOF) SYSTEM - The disclosure provides a circuit to mitigate ripple. The circuit includes a controller that generates a PWM (pulse width modulated) clock signal. A DC/DC converter receives the PWM clock signal, and generates an output signal. A light source is coupled to the DC/DC converter, and receives the output signal. The light source transmits light pulses during an integration time. A time integral of the output signal during the integration time is constant during a plurality of quad time periods. | 10-29-2015 |
20150309224 | OPTICAL DEVICE, OPTICAL SYSTEM, AND IMAGING APPARATUS - An optical device has a visible light transmittance that decreases from a central part thereof towards a peripheral part thereof. The optical device includes a visible light absorbing part, made of a material that absorbs at least a part of visible light, and having a thickness that increases from a central part thereof towards a peripheral part thereof, and a visible light transmitting part, made of a material that transmits the visible light, and is stacked on the visible light absorbing part. A relationship T420/T360>=3 is satisfied, where T420 denotes a transmittance of light having a wavelength of 420 nm, and T360 denotes a transmittance of light having a wavelength of 360 nm. | 10-29-2015 |
20150311259 | SOLID-STATE IMAGE SENSING DEVICE AND SOLID-STATE IMAGE PICKUP UNIT INCLUDING SAME - Image sensors, image pickup devices, and electronic apparatuses are provided. These can include an image sensor or image pickup device that includes a first insulating layer over a semiconductor substrate. A depression section is formed in the first insulating layer. An organic photoelectric conversion section fills the depression section. One or more inorganic photoelectric conversion sections can also be provided, with the organic photoelectric conversion section overlapping the inorganic photoelectric conversion sections. Alternatively or in addition, the depression section can taper from a side adjacent a light receiving side of the image sensor to a side adjacent the at least a first inorganic photoelectric conversion section. | 10-29-2015 |
20150311863 | COMPUTATION OF GLINT, GLARE, AND SOLAR IRRADIANCE DISTRIBUTION - Described herein are technologies pertaining to computing the solar irradiance distribution on a surface of a receiver in a concentrating solar power system or glint/glare emitted from a reflective entity. At least one camera captures images of the Sun and the entity of interest, wherein the images have pluralities of pixels having respective pluralities of intensity values. Based upon the intensity values of the pixels in the respective images, the solar irradiance distribution on the surface of the entity or glint/glare corresponding to the entity is computed. | 10-29-2015 |
20150311912 | ANALOG-TO-DIGITAL CONVERTER AND AN IMAGE SENSOR INCLUDING THE SAME - An analog-to-digital converter includes a modulator, a controller, and a digital filter. The modulator generates a modulated signal based on an analog signal. The controller generates a weight control signal. The digital filter includes a weight signal generator and a first integrator. The weight signal generator generates a weight signal based on the weight control signal. The first integrator generates a digital signal corresponding to the analog signal by integrating the weight signal in response to the modulated signal. The weight control signal corresponds to a type and an order of the digital filter. | 10-29-2015 |
20150311914 | RECONFIGURABLE ANALOG-TO-DIGITAL CONVERTER, IMAGE SENSOR AND MOBILE DEVICE INCLUDING THE SAME - An image sensor includes a pixel array, a controller, and a plurality of analog-to-digital converters. The pixel array includes a plurality of pixels coupled to column lines, respectively, and the plurality of pixels are configured to sense incident lights to generate analog signals through the column lines. The controller generate a conversion control signal that is configurable based on changes of at least one operational condition. The plurality of analog-to-digital converters are coupled to the column lines, respectively. The plurality of analog-to-digital converters perform a delta-sigma modulation and a digital filtering to convert the analog signals to digital signals. The plurality of analog-to-digital converters adjust a conversion gain internally in response to the conversion control signal. | 10-29-2015 |
20150312506 | SEMICONDUCTOR DEVICE - The present invention makes it possible to read a pixel signal at high speed. A pixel array includes a plurality of pixels that store an electrical charge. The amount of stored electrical charge is based on the amount of received light. A first pixel current source and a second pixel current source are coupled in parallel between a ground voltage and a pixel output node on a pixel signal read line. A switch is disposed in a wiring path that couples the pixel output node, the second pixel current source, and the ground voltage. | 10-29-2015 |
20150317499 | BARCODE IMAGING WORKSTATION HAVING SEQUENTIALLY ACTIVATED OBJECT SENSORS - A workstation includes a proximity system having multiple object sensors each associated with an object field of view for detecting a target object outside the housing. Each object sensor includes an IR emitter for emitting IR light into an IR emission field and an IR sensor for sensing returned IR light within an IR detection field that intersects the IR emission field. The workstation also includes a controller is operatively connected to the proximity system for activating each one of the multiple object sensors sequentially. | 11-05-2015 |
20150319369 | METHOD AND DEVICE FOR DETECTING THE TEMPORAL VARIATION OF THE LIGHT INTENSITY IN A MATRIX OF PHOTOSENSORS - The invention relates to a method and a device for detecting the temporal variation of the light intensity in a matrix of photosensors, comprising a matrix of pixels, a block for the automatic adjustment of the amplification of the photocurrent, and an arbitrating and event-encoding block. Each pixel comprises a photosensor that generates a photocurrent, an adjustable gain current mirror connected to the outlet of the photosensor, a transimpedance amplifier arranged at the outlet of the current mirror, optionally at least one amplification circuit arranged at the outlet of the transimpedance amplifier, and capacitors and detectors of thresholds for determining whether the output voltage exceeds a higher threshold or drops below a lower threshold in order to generate an event in the pixel. | 11-05-2015 |
20150319390 | STACKED AND TILED FOCAL PLANE ARRAY - Technologies pertaining to focal plane arrays (FPAs) are disclosed herein. In a general embodiment, the FPA includes a detector layer and a stack of discrete processing layers, where the stack of discrete processing layers is hybridized with the detector layer. The processing layers are each configured to perform a respective function. At least one processing layer includes multiple identical tiles, where each tile is configured to perform an identical function. | 11-05-2015 |
20150319392 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction. | 11-05-2015 |
20150325606 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device according to the present disclosure includes: a semiconductor base; a photoelectric conversion element provided in the semiconductor base; a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base; a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base; a first film member covering the photoelectric conversion element; and a second film member provided on the contact section. | 11-12-2015 |
20150325608 | DETECTOR ARRANGEMENT AND CORRESPONDING OPERATING METHOD - The invention concerns a detector arrangement for detection of radiation, in particular particle radiation or electromagnetic radiation, with a semi-conductor detector with several pixels for detection of the radiation. It is proposed that the individual pixels each have a first subpixel ( | 11-12-2015 |
20150325613 | OPTOELECTRONIC MODULES THAT HAVE SHIELDING TO REDUCE LIGHT LEAKAGE OR STRAY LIGHT, AND FABRICATION METHODS FOR SUCH MODULES - Optoelectronic modules include an optoelectronic device and a transparent cover. A non-transparent material is provided on the sidewalls of the transparent cover, which can help reduce light leakage from the sides of the transparent cover or can help reduce stray light from entering the module. The modules can be fabricated, for example, in wafer-level processes. In some implementations, openings such as trenches are formed in a transparent wafer. The trenches then can be filled with a non-transparent material using, for example, a vacuum injection tool. When a wafer-stack including the trench-filled transparent wafer subsequently is separated into individual modules, the result is that each module can include a transparent cover having sidewalls that are covered by the non-transparent material. | 11-12-2015 |
20150326241 | ANALOG-TO-DIGITAL CONVERTER AND SOLID-STATE IMAGING APPARATUS - An analog-to-digital (AD) converter has a latch section having latch units, a capacitor, and a latch control signal line connected to the latch units. A third voltage less than a first voltage and greater than a second voltage is applied as a power supply voltage to the latch units. When the capacitor is electrically connected to the latch control signal line, a potential of the latch control signal line becomes greater than or equal to the third voltage. Only when the electrical connection between the capacitor and the latch control signal line is disconnected, the first voltage is applied to the capacitor and the second voltage is applied to the latch control signal line. When the potential of the latch control signal line becomes greater than or equal to the third voltage, the latch units latch clock signals. | 11-12-2015 |
20150326242 | COUNTER, ANALOGUE TO DIGITAL CONVERTER INCLUDING THE COUNTER AND IMAGE SENSING DEVICE INCLUDING THE ANALOGUE TO DIGITAL CONVERTER - A counter includes a sampling unit suitable for sampling a logic state of a least significant bit (LSB) during a counting hold section, the counting hold section is present between first and second ramp sections; and a toggling control unit suitable for, in response to a clock and a sampling signal outputted from the sampling unit, generating the LSB according to a first voltage level of a counting target signal during a second part of the first ramp section and generating the LSB according to a second voltage level of the counting target signal during a first part of the second ramp section. | 11-12-2015 |
20150326243 | COLUMN A/D CONVERTER, COLUMN A/D CONVERSION METHOD, SOLID-STATE IMAGING ELEMENT AND CAMERA SYSTEM - A solid-state imaging device having an analog-digital converter, and an analog-digital conversion method are described herein. An example of a solid-state imaging device includes a column processing section that includes a low-level bit latching section. The low-level bit latching section receives a comparator output from a comparator and a count output from a counter, and the low-level bit latching section latches a count value. | 11-12-2015 |
20150326812 | IMAGING APPARATUS, METHOD OF DRIVING IMAGING APPARATUS, AND APPARATUS USING THE IMAGING APPARATUS - Provided is an imaging apparatus, including: a photoelectric conversion element; an amplifier transistor configured to output a voltage corresponding to electric charges generated by the photoelectric conversion element; a load transistor configured to supply a bias current to the amplifier transistor; and a voltage supply unit configured to input one of a first voltage and a second voltage, which have different voltage values, to a control node of the load transistor via an input capacitor. In the imaging apparatus, a current value of the bias current to be supplied by the load transistor at a time when the second voltage is input to the control node via the input capacitor is larger than a current value of the bias current to be supplied by the load transistor at a time when the first voltage is input to the control node via the input capacitor. | 11-12-2015 |
20150333094 | Suspended Lens Systems And Wafer-Level Methods For Manufacturing The Same - A suspended lens system, for imaging a scene, includes (a) a single-piece lens for receiving light from the scene, wherein the single-piece lens includes a concave surface, and (b) a substrate including a side that faces the concave surface, for holding the single-piece lens, wherein the substrate has non-zero optical transmission and contacts only portions of the single-piece lens that are away from the concave surface. A wafer-level method for manufacturing a suspended lens system includes molding a lens array, wherein each lens of the lens array includes a concave surface, and bonding the lens array to a surface of a substrate that has non-zero optical transmission, such that the concave surfaces face the substrate, to form a suspended lens wafer. | 11-19-2015 |
20150333095 | SOLID STATE PHOTOMULTIPLIERS ARRAY OF ENHANCED FILL FACTOR AND SIMPLIFIED PACKAGING - A multi-pixel photomultiplier optical sensor may include an array of photomultiplier dies. Each photomultiplier die may include a front side connection pad, SPAD cells, each SPAD cell including a front side electrode, a rear side electrode, and a resistor coupled in series to the front side electrode and coupled in common with other quenching resistors to the front side connection pad. The multi-pixel photomultiplier optical sensor may include a metallization layer in contact with the rear side electrode common to SPADs of the array of photomultiplier dies and electrically conductive pads. The electrically conductive bus may be coupled to an electrically conductive pin for distributing bias current to the array of photomultiplier dies. The multi-pixel photomultiplier optical sensor may include electrically conductive bond wires coupling at least some of the electrically conductive pads to the electrically conductive bus, and distributing bias current to the array of photomultiplier dies via the electrically conductive bus. | 11-19-2015 |
20150334259 | CIRCUIT BOARD, IMAGE SENSOR UNIT, IMAGE READING APPARATUS, AND IMAGE FORMING APPARATUS - A circuit board includes: a printed board including SWB pads for wire bonding and lands; image sensor ICs mounted on the printed board by a thermosetting adhesive and including FWB pads for wire bonding to be electrically connected to the SWB pads by wire bonding; and surface-mount elements mounted on the lands by soldering, wherein the surface-mount elements and the lands are connected by solders including bromine-containing flux, and coating films are formed on surfaces of the solders to prevent attachment of bromine to the SWB pads and the FWB pads. | 11-19-2015 |
20150334326 | IMAGE SENSOR AND STACKED STRUCTURE THEREOF - There are provided an image sensor and a stacked structure thereof. The image sensor includes a pixel array in which a plurality of unit pixels for generating an output signal in accordance with incident light are arranged, a first amplifier having a first input dynamic range, and a second amplifier having a second input dynamic range that is larger than the first input dynamic range. One of the first and second amplifiers amplifies the output signal in accordance with the intensity of light. | 11-19-2015 |
20150338268 | COMBINATORIAL LIGHT DEVICE FOR GENERAL LIGHTING AND LIGHTING FOR MACHINE VISION - A system with a machine and a lighting device. The machine includes an image capture device and a machine vision processing system configured to detect a characteristic of a subject in a space for an operation of the machine. The lighting device includes a first light source for generating light to illuminate the space, and a second light source for generating light of a particular wavelength to support detection of the characteristic of the subject via the machine vision processing system. The light of the particular wavelength is output at a sufficient intensity reasonably expected to produce a particular emission from the subject detectable via the image capture device different from an emission produced by exposure of the subject to the light for illumination of the space. The first and second light sources are integrated into the lighting device. | 11-26-2015 |
20150338628 | SPIM MICROSCOPE WITH A SEQUENTIAL LIGHT SHEET - A SPIM-microscope (Selective Plane Imaging Microscopy) having a y-direction illumination light source and a z-direction detection light camera. An x-scanner generates a sequential light sheet by scanning the illumination light beam in the x-direction. By an illumination optics having a zoom optics that is provided in the beam path of the illumination light beam the focal length of the illumination light beam can be varied. | 11-26-2015 |
20150340070 | LINE MEMORY DEVICE AND IMAGE SENSOR INCLUDING THE SAME - A line memory device includes a plurality of memory cells, a data line pair, a sense amplifier and an output unit. The plurality of memory cells are disposed adjacent to each other in a line. The data line pair is coupled to the memory cells to sequentially transfer memory data bits stored in the memory cells to the sense amplifier. The sense amplifier is configured to amplify the memory data bits that are sequentially transferred through the data line pair by corresponding delay times which are different from each other. The output unit samples an output of the sense amplifier to sequentially output retimed data bits of the memory data bits in response to a read clock signal. The read clock signal has a cyclic period which is less than a maximum delay time among the delay times. | 11-26-2015 |
20150340396 | Image sensor with dispersive color separation - A converging composite lens with enhanced chromatic aberration comprising one or more converging lenses from flint glass, and one or more diverging lenses from crown glass. A dispersive composite prism with enhanced chromatic aberration, comprising two or more thin prisms, stacked one on atop another in alternating opposite directions, where the prisms in the first direction are produced from flint glass, and the prisms in the second direction are from crown glass. A color image sensor comprising color pixels with colors separated by such dispersive lenses or prisms. A concentric image pixel with concentric circular and ring shaped photo sensors. | 11-26-2015 |
20150341581 | SOLID-STATE IMAGING APPARATUS AND IMAGING DEVICE - A solid-state imaging apparatus includes an imaging section in which a plurality of pixels, each of which has a photoelectric conversion element, are disposed in a matrix; a clock generation section; a reference signal generation section configured to generate a reference signal whose amplitude increases or decreases with the passage of time; a comparison section disposed corresponding to a column in an array of the plurality of pixels; a latch section disposed corresponding to the comparison section and configured to latch logic states of the plurality of phase signals; and a latch control section disposed corresponding to the comparison section, wherein the comparison section includes a differential amplifier, a current output element, and a third transistor, and wherein the comparison section outputs a second comparison signal based on the current output from the current output element after the second timing. | 11-26-2015 |
20150349002 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface. | 12-03-2015 |
20150349006 | DYNAMIC POLARIZER - A dynamically controllable polarizer integrated with an imaging detector to provide “on demand” variable polarization measurements. In one example, an imaging system includes a detector array including a plurality of pixels arranged in a two-dimensional array, and a dynamic polarizer coupled to the detector array, the dynamic polarizer including at least one patterned layer of a material disposed on the detector array, the material being operable to alter its conductivity responsive to an applied stimulus to reversibly transition between a polarizing state and a non-polarizing state. | 12-03-2015 |
20150349007 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM - A photoelectric conversion apparatus including a light-receiving element, including: a plurality of photoelectric conversion portions; a separating portion located between the plurality of photoelectric conversion portions; and a light guide portion surrounded by an insulation film including at least one insulation layer and provided so as to extend over the plurality of photoelectric conversion portions, and the light guide portion includes: a high refractive index part having a refractive index higher than a refractive index of the insulation layer; and a low refractive index part having a refractive index higher than the refractive index of the insulation layer and lower than the refractive index of the high refractive index part, and the high refractive index part is located on each of the plurality of photoelectric conversion portions and the low refractive index part is located on the separating portion. | 12-03-2015 |
20150349012 | SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP DEVICE - Provided is a solid-state image pickup device in which a first substrate and a second substrate are laminated and electrically connected by connection units. The first substrate includes: a plurality of pixel units which are disposed in a matrix shape and output signals corresponding to amounts of incident light; and first wiring units which connect the pixel units and the connection units. The second substrate includes: column processing circuits which process the signals generated by the pixel units; and second wiring units which connect the connection units and the column processing circuits. Sum of a wiring resistance of a first wiring unit and a wiring resistance of a second wiring unit are almost identical in each column. | 12-03-2015 |
20150350583 | IMAGING SYSTEMS HAVING IMAGE SENSOR PIXEL ARRAYS WITH SUB-PIXEL RESOLUTION CAPABILITIES - An image sensor may include an array of photodiodes and readout circuitry. A group of adjacent photodiodes in the array may be covered with a first color filter element that transmits a first color light and an additional group of adjacent photodiodes may be covered with a second color filter element that transmits a second color light. The group of photodiodes may share a floating diffusion node. The array may be operable in a low resolution mode in which the readout circuitry reads out image signals corresponding to a sum of charges generated by the group of photodiodes and in a high resolution mode in which the readout circuitry reads out image signals corresponding to charges generated by each of the photodiodes from the shared floating diffusion node. The photodiodes in the group may capture charge using different integration times for generating high-dynamic-range images. | 12-03-2015 |
20150350584 | Single-Exposure High Dynamic Range CMOS Image Sensor Pixel With Internal Charge Amplifier - A single-exposure high dynamic range (HDR) image sensor utilizes a charge amplifier having a selectively coupled conversion capacitor to read a single photodiode charge during a multi-phase readout operation. An overflow readout is performed during the photodiode charge integration phase, and utilizes the conversion capacitor to read overflow signals indicating rapidly rising photodiode charges caused by extreme exposure conditions, which also prevents saturation of the photodiode. At the end of the integration phase, the remaining photodiode charge is then measured using two readouts: a high sensitivity readout during which the storage capacitor de-coupled to accurately measure low-light conditions, and a low sensitivity readout during which the remaining photodiode charge is stored on the storage capacitor to provide normal light image data. Final single exposure HDR image data is then calculated by summing the overflow image data with the high-sensitivity and/or the low-sensitivity image data. | 12-03-2015 |
20150357357 | MULTI-TERMINAL OPTOELECTRONIC DEVICES FOR LIGHT DETECTION - Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor is disclosed. The image sensor includes an optically sensitive material; a plurality of electrodes proximate the optically sensitive material, including at least a first electrode, a second electrode and a third electrode; and a charge store. The first electrode is coupled to the charge store, and the first electrode and the second electrode are configured to provide a bias to the optically sensitive material to direct photocarriers to the charge store. Other methods and apparatuses are disclosed. | 12-10-2015 |
20150357364 | IMAGE SENSOR - An image sensor includes a plurality of pixels arranged in two dimensions, wherein at least one pixel includes: a photoelectric conversion layer formed in a substrate; a first color filter layer formed over the photoelectric conversion layer; and a second color filter layer formed over the first color filter layer and defining an opening that is eccentrically formed with respect to an optical axis of the photoelectric conversion layer. | 12-10-2015 |
20150357369 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to an aspect of the present invention includes: an imaging area including a plurality of pixels arranged in rows and columns, each of the plurality of pixels converting incident light into a pixel signal; a column signal line provided for each of the columns, for reading out the pixel signal; and a current source connected to the column signal line, in which the current source includes: three transistors connected in series and provided between the column signal line and a GND line; and a transistor having a drain and a source each of which is connected to a different one of connection points connecting adjacent ones of the three transistors. | 12-10-2015 |
20150358569 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a pixel that includes a photoelectric conversion unit accumulating charges obtained by photoelectric conversion, the photoelectric conversion unit being disposed in a semiconductor substrate, a photo gate that controls potential of the photoelectric conversion unit from a plane opposite to a light incident plane of the photoelectric conversion unit, a voltage converting unit that converts signal charges read from the photoelectric conversion unit into a voltage, and a conversion capacity control unit that controls a conversion capacity of the voltage converting unit. | 12-10-2015 |
20150362372 | EXTENDED TEMPERATURE RANGE MAPPING PROCESS OF A FURNACE ENCLOSURE USING VARIOUS DEVICE SETTINGS - A process is provided for mapping temperatures in an enclosure during a combustion process. A device setting of an image-capturing device is provided. An intensity-temperature mapping is generated by performing an intensity-temperature calibration based on an intensity of an image pixel in a field of view (FOV) generated by the image-capturing device, a corresponding temperature measurement, and a selected device setting. Each emitted radiation of selected regions is detected based on a first image in the FOV. At least one region is determined whether the region is poor responsive, based on the intensity-temperature mapping associated with the device setting. The at least one poor responsive region is replaced with acceptable regions unaffected by the saturation from at least one other image captured at a different device setting for higher temperature resolution. | 12-17-2015 |
20150362585 | 2-D Planar VCSEL Source for 3-D Imaging - An apparatus and a method are provided for 3-D imaging and scanning using a 2-D planar VCSELs source configured as a lightfiled optical source. VCSELs are configured in different 2-D spatial arrangements including single VCSEL, or preferably a group, cluster, or array each to be operated effectively as an independent VCSEL array source. A set of microlens and an imaging lens positioned at a pre-determined distance collimates radiation from each VCSEL array source to a set of parallel beams. The parallel beams from different VCSEL array sources generated in a rapid pre-determined timing sequence provide scanning beams to illuminate an object. The radiation reflected from the object is analyzed for arrival time, pulse shape, and intensity to determine a comprehensive set of distance and intensity profile of the object to compute a 3-D image. | 12-17-2015 |
20150362695 | CORRECTING OPTICAL DEVICE, IMAGE DEFLECTION CORRECTING DEVICE AND IMAGING DEVICE - A correcting optical device including: a fixing member; a rotating member; a movable member; first and second drive units; and at least first and second contact members. For the regulation of movement of the movable member, rotational driving force is produced by the first and second drive units and, the rotating member is rotated in the opposite direction of the rotational direction of the movable member after the movable member is rotated to be brought into contact with the first contact member, whereby translational movement of the movable member is regulated. For image deflection correction, rotational driving force in the opposite direction of the rotational force is produced and, the rotating member is rotated in the opposite direction of the rotational direction of the movable member after the movable member is rotated to be brought into contact with the second contact member, whereby regulation on the movable member is released. | 12-17-2015 |
20150364512 | SOLID-STATE IMAGE SENSOR - At least one solid-state image sensor includes a first photoelectric conversion unit configured to convert light into an electric charge, a first field effect transistor including a gate to which the electric charge converted by the first photoelectric conversion unit is input, and a bipolar transistor including a base and an emitter, the base being connected to a source of the first field effect transistor, and the emitter being configured to output a signal. | 12-17-2015 |
20150364518 | IMAGE SENSORS AND IMAGE PROCESSING SYSTEMS USING MULTILEVEL SIGNALING TECHNIQUES - An image sensor includes a pixel array configured to generate a plurality of pixel signals, an analog to digital converter circuit coupled to the pixel array and configured to generate respective digital codes responsive to respective ones of the pixel signals, a plurality of memories, respective ones of which are configured to store respective bits of the digital codes, a signal processing circuit coupled to a plurality of memories and configured to generate analog signals responsive to the stored bits, each of the analog signals corresponding to multiple ones of the stored bits, and a comparator circuit configured to compare the analog signals to respective ones of a plurality of reference signals to generate digital signals corresponding to the multiple ones of the stored bits. Related image processing systems and methods are also described. | 12-17-2015 |
20150365579 | METHOD AND APPARATUS PROVIDING PIXEL ARRAY HAVING AUTOMATIC LIGHT CONTROL PIXELS AND IMAGE CAPTURE PIXELS - A pixel array uses two sets of pixels to provide accurate exposure control. One set of pixels provide continuous output signals for automatic light control (ALC) as the other set integrates and captures an image. ALC pixels allow monitoring of multiple pixels of an array to obtain sample data indicating the amount of light reaching the array, while allowing the other pixels to provide proper image data. A small percentage of the pixels in an array is replaced with ALC pixels and the array has two reset lines for each row; one line controls the reset for the image capture pixels while the other line controls the reset for the ALC pixels. In the columns, at least one extra control signal is used for the sampling of the reset level for the ALC pixels, which happens later than the sampling of the reset level for the image capture pixels. | 12-17-2015 |
20150365611 | IMAGE FORMING APPARATUS AND IMAGING SYSTEM - Provided by the present invention is an image forming apparatus wherein a signal to noise ratio is improved without reducing a video rate of a real-time moving image. The image forming apparatus comprises:
| 12-17-2015 |
20150365618 | SOLID-STATE IMAGE SENSING DEVICE HAVING SIGNAL HOLDING CIRCUITS FOR HOLDING IMAGE DIGITAL SIGNALS CONVERTED BY ANALOG-DIGITAL CONVERTERS - A solid-state image sensing device according to the invention which can reduce an instantaneous current occurring in transferring image digital signals from analog-digital converters to registers to reduce noise sneaking into the analog-digital converters and a pixel array includes a pixel array, a vertical scanning circuit, a plurality of column ADCs, a plurality of registers, and control signal generation units. The control signal generation units are provided for respective groups into which the column ADCs and the registers disposed on one side of the pixel array are divided, and generate control signals of different timings, for respective units including at least one group, of transfer of converted image digital signals to the registers from the column ADCs operating in parallel. | 12-17-2015 |
20150369589 | POSITIONAL SHIFT AMOUNT MEASUREMENT METHOD, CORRECTION TABLE GENERATION APPARATUS, IMAGING APPARATUS, AND PROJECTING APPARATUS - A positional shift amount measurement method of measuring a positional shift amount of optical fibers in an optical fiber bundle formed by binding a plurality of optical fibers is provided. The positional shift amount measurement method includes: an image acquiring step of capturing an image of a test chart having a cyclic pattern in at least a first direction via the optical fiber bundle to acquire a captured image; a phase calculating step of calculating phases of respective pixels of the captured image from the cyclic pattern in the captured image; and a positional shift amount calculating step of calculating a pixel shift amount of the captured image resulting from a positional shift, in the first direction, of the optical fibers in units of sub pixels, based on a phase shift of pixels of the captured image arranged in a second direction vertical to the first direction. | 12-24-2015 |
20150369730 | LASER ILLUMINATED GAS IMAGING - Aspects of the invention generally relate to illumination gas imaging and detection. Camera systems can illuminate a target scene with light sources configured to emit absorbing and non-absorbing wavelengths with respect to a target gas. An image of the target scene illuminated with a non-absorbing wavelength can be compared to a non-illuminated image of the target scene in order to determine information about the background of the target scene. If sufficient light of the non-absorbing wavelength is scattered by the scene toward a detector, the target scene comprises an adequate background for performing a gas imaging process. A camera system can alert a user of portions of the target scene suitable or unsuitable for performing a gas imaging process. If necessary, the user can reposition the system until sufficient portions of the target scene are recognized as suitable for performing the gas imaging process. | 12-24-2015 |
20150369980 | METAL-DIELECTRIC OPTICAL FILTER, SENSOR DEVICE, AND FABRICATION METHOD - An optical filter, a sensor device including the optical filter, and a method of fabricating the optical filter are provided. The optical filter includes one or more dielectric layers and one or more metal layers stacked in alternation. The metal layers are intrinsically protected by the dielectric layers. In particular, the metal layers have tapered edges that are protectively covered by one or more of the dielectric layers. | 12-24-2015 |
20150371075 | ARRAY SENSOR APPARATUS AND FORMING METHOD THEREOF - An array sensor apparatus and forming method thereof, wherein the array sensor comprises: a driving circuit and a sensor circuit, wherein the driving circuit and the sensor circuit are formed on the same substrate surface, the sensor circuit comprises a pixel cell array including pixel cells and driving lines connected with the pixel cells, output ends of the driving circuit are connected to the driving lines of the sensor circuit, the driving circuit comprises a first transistor, and the pixel cell comprises a second transistor. In the array sensor apparatus of the present disclosure, the driving circuit and the sensor circuit are formed on the same substrate surface, thus occupying less area. Reliability may be improved. Besides, the forming processes can be implemented simultaneously without additional processing steps. | 12-24-2015 |
20150373292 | IMAGING APPARATUS, IMAGING SYSTEM AND IMAGING METHOD - An imaging apparatus includes sensor arrays each having a plurality of subarrays having a plurality of sensors which output signals based on radiation or light, and a plurality of temperature sensors which output signals based on temperatures of the sensor arrays. In this case, a signal output from one subarray of the plurality of subarrays and a signal of one temperature sensor of the plurality of temperature sensors are read out through a line to which the sensor included in the one subarray and the one temperature sensor are commonly connected. | 12-24-2015 |
20150378144 | ASSEMBLY FOR A VIDEO ENDOSCOPE - A subassembly for a video endoscope with a picture-recording sensor ( | 12-31-2015 |
20150380449 | SOLID-STATE IMAGE PICK-UP APPARATUS, IMAGE PICK-UP SYSTEM, AND METHOD OF DRIVING SOLID-STATE IMAGE PICK-UP APPARATUS - A solid-state image pick-up apparatus of an example includes a photoelectric conversion portion, a transfer transistor configured to transfer a charge in the photoelectric conversion portion, and a signal output circuit configured to supply selectively a first voltage to turn on the transfer transistor and a second voltage to turn off the transfer transistor to the transfer transistor. The signal output circuit is configured to supply the second voltage having a voltage value selected from two or more different voltage values based on an output signal from a pixel. | 12-31-2015 |
20150381912 | IMAGE CAPTURING APPARATUS AND CONTROL METHOD THEREOF, AND STORAGE MEDIUM - An image capturing apparatus comprises a pixel region in which unit pixels are disposed, a floating diffusion portion which converts signal charges into voltage signals, an output line on which a signal based on a voltage at the floating diffusion portion is output, and a switching unit that switches between a first readout mode, in which all of the signal charges from the plurality of photoelectric conversion portions are transferred to the floating diffusion portion and read out from the output line, and a second readout mode, in which the signal charges from the plurality of photoelectric conversion portions are transferred at least one at a time to the floating diffusion portion and read out from the output line independently, wherein the switching unit switches the readout mode based on a dark current amount. | 12-31-2015 |
20160003682 | DYNAMIC PHASE ACQUIRING DEVICE - A dynamic phase acquisition device includes a light collecting opening, a semi-reflecting and semi-transmitting mirror, a phase shifter, a polarizer, a plane reflector, a photosensing element and a phase processor. In the dynamic phase acquisition device, light passes through the light collecting opening to the semi-reflecting and semi-transmitting mirror, and then is divided into two channels. One channel of the light sequentially passes through the phase shifter, the polarizer to the photosensing element, to form a first image; the other channel of the light, after being reflected by the plane reflector, directly passes through the polarizer to the photosensing element, to form a second image. The photosensing element sends the first image and the second image to the phase processor, and the phase processor obtains phase data; and a leading or lagging phase shift range of the phase shifter is 1 degree to 20 degrees. By using the phase shifter to provide a lead or a lag of a small amount of degrees, such as from 1 to 20 degrees, or even from 5 to 10 degrees, phase data can be obtained via two-path image detection, thus eliminating the need for optical elements for at least one path detection, and thereby simplifying the structure and reducing costs. | 01-07-2016 |
20160003739 | DIFFERENTIAL SCAN IMAGING SYSTEMS AND METHODS - Systems and methods for producing background-reduced fluorescence imaging signals include an illumination system that provides illumination light from an illumination source to a targeted area on the sample platform, a sensor adapted to detect light and having an array of sensing locations, and collection optics arranged and configured to project light emanating from the sample platform onto the sensor. In typical operation, light from the targeted area is projected onto a first portion of the sensor comprising a first plurality of the sensing locations and light from proximal to the targeted area on the platform is projected onto a second portion of the sensor comprising a second plurality of the sensing locations, and a second signal detected by the second portion of the sensor is subtracted from a first signal detected by the first portion of the sensor to produce a background-reduced signal, e.g., a signal with reduced background related noise. | 01-07-2016 |
20160005776 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. | 01-07-2016 |
20160005785 | IMAGE SENSOR WITH ANTI-BLOOMING GATE - The invention concerns active-pixel electronic image sensors. The pixel comprises a photodiode (PH) designed in a semiconductor active layer ( | 01-07-2016 |
20160006956 | IMAGING APPARATUS, IMAGING SYSTEM, AND DRIVING METHOD OF IMAGING APPARATUS - During a period in which an electric potential of one node of a holding capacitance shifts from a first electric potential to a second electric potential, the other node of the holding capacitance is in an electrically-floating state. | 01-07-2016 |
20160006967 | IMAGING APPARATUS, METHOD OF DRIVING THE SAME, AND IMAGING SYSTEM - Provided is an imaging apparatus, including: a driving circuit switching between a current supplying state and a current non-supplying state of the current sources included in column circuits in the respective columns; at least one second readout line to which image signals output from the column circuits in the respective columns are input; switches each having one terminal and another terminal; and a switch control circuit configured to output switch control signals for respectively controlling the switches to be turned on or off, each of the one terminals being connected to corresponding second readout line and each of the another terminals being connected commonly to an output line, in which, in a period in which the switch control signals for respectively controlling the switches to be turned on are output, the number of the current sources controlled to be in the current supplying state by the driving circuit is constant. | 01-07-2016 |
20160011408 | ANALYSIS TARGET REGION SETTING APPARATUS | 01-14-2016 |
20160013233 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE | 01-14-2016 |
20160013328 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM | 01-14-2016 |
20160014353 | UNIT PIXEL OF IMAGE SENSOR, IMAGE SENSOR, AND COMPUTING SYSTEM HAVING THE SAME | 01-14-2016 |
20160014356 | SOLID-STATE IMAGING DEVICE AND METHOD OF DRIVING SOLID-STATE IMAGING DEVICE | 01-14-2016 |
20160020235 | CAPACITANCE DEVICE IN A STACKED SCHEME AND METHODS OF FORMING THE SAME - Embodiments of the present disclosure include devices and sensor packages and methods of forming the same. An embodiment is a device including a first semiconductor chip. The first semiconductor chip includes a first substrate, a first conductive pad over the first substrate. The device further includes a second semiconductor chip having a second surface bonded to a first surface of the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive pad over the second substrate. The second conductive pad and the first conductive pad form a first capacitor. | 01-21-2016 |
20160021322 | IMAGE SENSOR AND METHOD OF OPERATING THE IMAGE SENSOR - An image sensor includes a row driver, a pixel array, an analog-to-digital converter, and an output compensating circuit. The row driver generates a photo-gate control signal, a storage control signal, a transfer control signal, a reset control signal and a row selecting signal. The pixel array includes a plurality of pixels, and each pixel uses a deep trench isolation (DTI) region as a photo gate. The pixel array receives optical signals, converts the optical signals to electric signals, and outputs the electric signals as image signals in response to the photo-gate control signal, the storage control signal, the transfer control signal, the reset control signal, and the row selecting signal. The analog-to-digital converter performs an analog-to-digital conversion on the image signals to generate first signals, and the output compensating circuit compensates the first signals. | 01-21-2016 |
20160022389 | FOCUS SCANNING APPARATUS RECORDING COLOR - Disclosed are a scanner system and a method for recording surface geometry and surface color of an object where both surface geometry information and surface color information for a block of said image sensor pixels at least partly from one 2D image recorded by said color image sensor | 01-28-2016 |
20160028977 | CMOS IMAGE SENSORS WITH PHOTOGATE STRUCTURES AND SENSING TRANSISTORS, OPERATION METHODS THEREOF, AND IMAGE PROCESSING SYSTEMS INCLUDING THE SAME - ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage. | 01-28-2016 |
20160035768 | IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, AND METHOD FOR MANUFACTURING IMAGE PICKUP APPARATUS - An image pickup apparatus includes a first pixel electrode connected to a pixel circuit, a second pixel electrode adjoining the first pixel electrode and connected to the pixel circuit, a photoelectric conversion film continuously covering the first and second pixel electrodes, and an opposite electrode facing the first and second pixel electrodes via the film. The film includes a recessed portion recessed toward a portion between the first and second pixel electrodes on a surface opposite to the first and second pixel electrodes. The depth of the recessed portion is greater than the first pixel electrode's thickness, and a distance from the first pixel electrode to the recessed portion is greater than a distance from the first pixel electrode to the second pixel electrode. The opposite electrode is provided continuously along the surface via the film, and the recessed portion surrounds a part of the opposite electrode. | 02-04-2016 |
20160035777 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other. | 02-04-2016 |
20160035784 | UNIT PIXEL OF IMAGE SENSOR, IMAGE SENSOR INCLUDING THE SAME AND METHOD OF MANUFACTURING IMAGE SENSOR - Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess. | 02-04-2016 |
20160035920 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit and an amplifier transistor configured to output a signal generated by the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode electrically connected to the amplifier transistor, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion layer includes quantum dots. | 02-04-2016 |
20160037105 | PIXEL ARRAY AND METHOD FOR CONTROLLING A PIXEL ARRAY - A pixel array includes pixels arranged in columns. A pair of column lines is provided for each column of pixels. A current source circuit is coupled to each pair of column lines. The current source circuit provides current to the pair of column lines in a first mode of operation such that when one column line in a pair of column lines is being provided with a first current the other column line in the pair of column lines is being provided with a second current which is less than the first current. | 02-04-2016 |
20160037111 | NEGATIVE BIASED SUBSTRATE FOR PIXELS IN STACKED IMAGE SENSORS - A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip. | 02-04-2016 |
20160037114 | SCALING DOWN PIXEL SIZES IN IMAGE SENSORS - In various embodiments, methods and related apparatuses for scaling down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal. | 02-04-2016 |
20160037116 | PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM - A photoelectric conversion apparatus including a plurality of photoelectric conversion units each of which includes a first electrode, a second electrode, a photoelectric conversion layer which accumulates signal charges and which is disposed between the first and second electrodes, and an insulating layer disposed between the photoelectric conversion layer and the second electrode, an amplification unit configured to receive optical signals and output signals each based on one of the optical signals, each of the optical signals being based on one of the signal charges, each of the signal charges being accumulated in one of the plurality of photoelectric conversion units, and a capacitive element having a first node and a second node, the first node being connected to the second electrodes of the plurality of photoelectric conversion units and the amplification unit and the second node selectively receiving each one of a plurality of potentials having different values. | 02-04-2016 |
20160043119 | IMAGE PIXEL, IMAGE SENSOR INCLUDING THE SAME, AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME - An image pixel includes a plurality of photodiodes formed in a semiconductor substrate, and a plurality of trenches. Each photodiode is configured to accumulate a plurality of photocharges corresponding to the intensity of light received at each photodiode through a microlens. The plurality of trenches is configured to electrically isolate the photodiodes from one another. | 02-11-2016 |
20160050382 | FLEXIBLE READOUT AND SIGNAL PROCESSING IN A COMPUTATIONAL SENSOR ARRAY - A computational sensing array includes an array of sensing elements. In each sensing element, a first signal is generated from a transducer. A second signal is produced by a collection unit in response to receiving the first signal. The second signal may be modified, in a conditioning unit. A sensing element preprocessing unit generates a word representing the value of the modified second signal, and may produce an indication of change of the first signal. A current value of the word may be stored in a state holding element local to the sensing element, and a previous value of the word may be retained in a further state holding element local to the sensing element. | 02-18-2016 |
20160050383 | MULTIPLE GATED PIXEL PER READOUT - A system for providing an improved image of daytime and nighttime scene for a viewer within a vehicle is provided herein. The system includes: a pixel array sensor having a fully masked gate-off capability at a single pixel level, wherein the pixel array sensor is provided with an inherent anti-blooming capability at the single pixel level; wherein each pixel is gated by a corresponding transfer gate transistor having high transfer gate efficiency. The system further includes a gating unit configured to control the transfer gate transistors with pulsed or continuous wave modulated active and passive light sources, to yield a synchronized sensing signal from the sensor, wherein a single pulse is sufficient to cover the entire field of view of the sensor and the entire depth of field of the illuminated scene; and a processing unit configured to receive the synchronized sensing signal and process it. | 02-18-2016 |
20160054173 | IMAGE SENSOR HAVING IMPROVED LIGHT UTILIZATION EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - An image sensor including a color filter array layer, which includes a plurality of color filters transmitting light of different colors; and reflective partitioning walls, which define the color filters and have a lower refractive index than that of the color filters; a color separation device, which separates incident light into a plurality of colors, such that the plurality colors are incident on the plurality of color filters, respectively; and a sensor substrate, on which a plurality of light detection devices for respectively sensing light transmitted through the plurality of color filters are arranged in an array shape. | 02-25-2016 |
20160056199 | UNIT PIXELS, IMAGE SENSORS INCLUDING THE SAME, AND IMAGE PROCESSING SYSTEMS INCLUDING THE SAME - A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges generated from incident light during a first period and a storage diode area including a storage diode configured to receive and store the photocharges from the photo diode. The photo diode corresponds to a micro lens that focuses the incident light. | 02-25-2016 |
20160056200 | Unit Pixels for Image Sensors and Pixel Arrays Comprising the Same - Provided are unit pixels for image sensors and pixel arrays including the same. The unit pixels include a first pixel including first and second photo diodes which are adjacent to each other, and a first deep trench isolation (DTI) fully surrounding sides of the first and second photo diodes and electrically separating the first pixel from other pixels adjacent to the first pixel. The first pixel includes a second DTI positioned between the first photo diode and the second photo diode and having one side formed to be spaced apart from the first DTI. The first pixel also includes a color filter positioned on the first and second photo diodes and fully overlapping the first and second photo diodes. The first pixel further includes a floating diffusion node electrically connected with the first and second photo diodes. The first and second photo diodes share one floating diffusion node. | 02-25-2016 |
20160056797 | REGISTER CIRCUIT SYSTEM AND SOLID-STATE IMAGING DEVICE - According to one embodiment, a register circuit system includes a first register circuit, a step-down circuit, and a second register circuit. The step-down circuit generates a second power voltage from a first power voltage. The second power voltage is a power voltage of a potential level lower than the first power voltage. The second register circuit is supplied with the second power voltage from the step-down circuit. The first register circuit keeps holding data during a period of time in which the step-down circuit is stopping the generating of the second power voltage. | 02-25-2016 |
20160057368 | UNIT PIXEL TIMING CONTROL METHOD OF IMAGING DEVICE HAVING WDR PIXEL ARRAY OF nPD STRUCTURE - A unit pixel timing control method of an imaging device having a WDR pixel array with an nPD structure is provided. The unit pixel timing control method including the steps of:
| 02-25-2016 |
20160061656 | MEASUREMENT DEVICE - A complex amplitude information measurement apparatus ( | 03-03-2016 |
20160061659 | Integrated Digital Discriminator For a Silicon Photomultiplier - Apparatuses and methods are provided that minimize the effects of dark-current pulses. For example, in one embodiment of the invention, a method is provided where a first pixel is struck (i.e., a primary pixel). Pixels struck within a fixed time frame after the primary pixel is struck are referred to as secondary pixels. After a short fixed time frame has expired, the number of primary and secondary pixels is added. If the count exceeds a threshold, the primary pixel was activated by the first (or early) photon from a true gamma event. If the threshold is not met then it is likely the primary pixel generated a dark pulse that should be ignored. | 03-03-2016 |
20160064434 | Color Filter Array and Image Receiving Method thereof - A color filter array, for an image sensing device, includes a plurality of filter patterns. Each filter pattern includes at least one first filter, corresponding to a first wavelength range of a first color; at least one second filter, corresponding to a second wavelength range of a second color; at least one third filter, corresponding to a third wavelength range of a third color; at least one fourth filter, corresponding to a first infrared wavelength range, wherein the first infrared wavelength range is an intersection of the first wavelength range and the second wavelength range; and at least one fifth filter, corresponding to a second infrared wavelength range, wherein the second infrared wavelength range is an intersection of the first wavelength range and the third wavelength range. | 03-03-2016 |
20160064442 | SOLID-STATE IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - Provided is a solid-state image pickup apparatus, including: a pixel region, in which a plurality of pixels each including an amplifier transistor are arranged two-dimensionally in rows and columns, and which includes an n-row signal mixing region in which outputs of n amplifier transistors are mixed, where n is a natural number of 1 or more, and an m-row signal mixing region in which outputs of m amplifier transistors are mixed, where m>n; a column signal line to which a voltage from the amplifier transistor is output; and a clipping circuit, which is configured to clip a voltage in the column signal line, and is arranged at a position that is closer to the n-row signal mixing region than to the m-row signal mixing region. | 03-03-2016 |
20160064445 | PHOTODIODE ARRAY DETECTOR - A photodiode array detector used for detecting light which has undergone wavelength separation by a spectroscopic element, the photodiode array detector including: a light receiving element array wherein, taking a plurality of light receiving elements which detect light of the same wavelength range as one unit, a plurality of such units are arrayed in the direction of dispersion of said wavelength; and a charge accumulation time setting unit which sets different charge accumulation times for the plurality of light receiving elements within the one unit. | 03-03-2016 |
20160064446 | IMAGE SENSOR AND PIXEL OF THE IMAGE SENSOR - A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration. | 03-03-2016 |
20160073046 | IMAGING ARRAY HAVING PHOTODIODES WITH DIFFERENT LIGHT SENSITIVITIES AND ASSOCIATED IMAGE RESTORATION METHODS - A pixel sensor array includes a plurality of pixel sensors having a first gain and a plurality of pixel sensors having a second gain less than the first gain. | 03-10-2016 |
20160076873 | Stationary Dimensioning Apparatus and Method Employing Fluorescent Fiducial Marker - A stationary dimensioning apparatus dimensions a load on a movable conveyance by detecting a barcode fiducial that is situated on the conveyance and by detecting a large number of points in space that represent points on the surface of the load. The barcode fiducial fluoresces as a predetermined wavelength, and the points in space are detected in the form of electromagnetic energy at the same predetermined wavelength. The electromagnetic energy is subjected to a band pass filter that rejects all but the predetermined wavelength before the remaining electromagnetic energy is impinged on a camera sensor. The location of the barcode fiducial on the conveyance is compared with a reference location of a reference barcode fiducial, and a translation vector and a rotation vector between them are calculated. The translation and rotation vectors are then employed in a transformation matrix that is used to transform each of the detected points in space into transformed points in space to generate a characterization of the dimensions of the load. | 03-17-2016 |
20160076934 | VEHICLE OPTICAL SENSOR SYSTEM - An optical sensor system adapted to operate through a window of a vehicle includes a lens, a plurality of optoelectronic devices, and an optical device. The lens is configured to direct light from a field-of-view toward a focal plane. The plurality of optoelectronic devices are arranged proximate to the focal plane. The plurality of optoelectronic devices includes a first optoelectronic device operable to detect an image from a first portion of the field-of-view, and a second optoelectronic device operable to detect light from a second portion of the field-of-view distinct from the first portion. The optical device is configured to direct light from outside the field-of-view toward the second portion. | 03-17-2016 |
20160076993 | DEVICE FOR DETECTING AN ANALYTE IN A BODILY FLUID - A device is proposed for detecting at least one analyte in a bodily fluid. The device comprises at least one test element with at least one two-dimensional evaluation region. The device furthermore comprises at least one spatially resolving optical detector having a plurality of pixels. The detector is designed to image at least part of the test element onto an image region. In the process, at least part of the evaluation region is imaged onto an evaluation image region. The detector is matched to the test element such that a predetermined minimum number of pixels is provided for each dimension within the evaluation image region. The pixels are arranged in a two-dimensional matrix arrangement. The matrix arrangement has pixel rows and pixel columns, wherein the pixel rows are arranged substantially parallel to a longitudinal direction of the evaluation region and/or of the evaluation image region. | 03-17-2016 |
20160079291 | CMOS IMAGE SENSOR - A CMOS image sensor including: an array of M×N pixels, the pixels of a same column being connected to a same output track, each pixel including a photodiode, a sense node, a transfer transistor, a reset transistor, and a read circuit; and a test circuit including an assembly of N elementary reference cells respectively connected to the N output tracks of the sensor, each cell including a resistor, a sense node, a transfer transistor, a reset transistor, and a read circuit, the N resistors being series-connected between first and second nodes of application of a reference voltage. | 03-17-2016 |
20160079298 | IMAGE CAPTURING APPARATUS AND CONTROL METHOD THEREFOR - An image capturing apparatus having pixels is provided. Each pixel includes a photoelectric conversion unit including a charge accumulation region, an output unit configured to output a signal based on a potential of a node electrically connected to the charge accumulation region, and a connection unit configured to electrically connect a capacitance to the node. The charge accumulation region includes a first portion and a second portion. Charge is configured to be first accumulated in the first portion, and, after the first portion is saturated, be accumulated in the second portion. The output unit is configured to output a first signal based on the potential of the node before the capacitance is connected thereto, and, then a second signal based on the potential of the node after the capacitance is connected thereto. | 03-17-2016 |
20160080675 | READOUT CIRCUIT AND METHOD OF USING THE SAME - A readout circuit includes a first analog circuit configured to receive an output of a first sub-array of a pixel array and to output a first signal based on the received output of the first sub-array. A second analog circuit is configured to receive an output of a second sub-array of the pixel array and to output a second signal based on the received output of the second sub-array. A first digital circuit is configured to receive the first signal and convert the first signal to a first digital signal, and receive the second signal and convert the second signal to a second digital signal. | 03-17-2016 |
20160086044 | Optical Device and Optical Scanning Method Thereof - An optical device includes a substrate, a sensor layer, a light-filtering layer, and a control module. The sensor layer is disposed on the substrate and generates a pre-scan image. The light-filtering layer is disposed over the sensor layer, wherein the light-filtering layer allows or blocks external light from reaching the sensor layer. The control module is coupled to the sensor layer and the light-filtering layer, wherein the control module controls the light-filtering layer according to the pre-scan image to selectively allow or block external light. | 03-24-2016 |
20160086988 | IMAGING APPARATUS - An imaging apparatus includes a plurality of pixels, a signal holding unit, first and second control electrodes. Each of the plurality of pixels includes a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection. The signal holding unit is in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. The first control electrode is configured to transfer a signal of the photoelectric conversion unit to the signal holding unit. The second control electrode is configured to transfer a signal for performing the phase difference detection type of focal point detection. | 03-24-2016 |
20160088251 | CMOS IMAGE SENSOR, PIXEL UNIT AND CONTROL METHOD THEREOF - A CMOS image sensor, a pixel unit and a control method thereof are provided. The pixel unit includes: a photoelectric conversion unit, an isolation transistor, a storage unit and a reading unit, wherein a first terminal of the isolation transistor is connected to the photoelectric conversion unit, a second terminal of the isolation transistor is connected to the storage unit and the reading unit; and wherein the storage unit comprises a first switch unit, a second switch unit, a first storage capacitor, a second storage capacitor and a reset unit, the first switch unit is adapted for controlling the first storage capacitor to be charged or discharged, the second switch unit is connected to the second storage capacitor and is adapted for controlling the second storage capacitor to be charged or discharged. The pixel unit improves signal-to-noise ratio of image signals generated by the pixel unit. | 03-24-2016 |
20160088253 | IMAGE SENSOR DEVICE, IMAGE PROCESSING DEVICE AND METHOD FOR MANUFACTURING IMAGE SENSOR DEVICE - According to one embodiment, an image sensor device includes a sensor array on a semiconductor substrate, the sensor array including blocks, each of the blocks including a pixel and outputting a signal of the pixel; a first insulating layer on the sensor array; semiconductor layers on the first insulating layer; analog-digital converting circuits on the semiconductor layers, the analog-digital converting circuits corresponding to the blocks and processing the signal; a second insulating layer on the first insulating layer and the analog-digital converting circuits; and interconnect portions electrically connecting the analog-digital converting circuits to the blocks via a region between the semiconductor layers, the interconnect portions extending across the first insulating layer and the second insulating layer. | 03-24-2016 |
20160093650 | IMAGING DEVICE INCLUDING PHOTOELECTRIC CONVERSION FILM - An imaging device includes a first pixel electrode, a second pixel electrode adjacent to the first pixel electrode, and a photoelectric conversion film continuously covering the first pixel electrode and the second pixel electrode, in which an insulating film is provided between the first pixel electrode and the photoelectric conversion film, and between the second pixel electrode and the photoelectric conversion film, and an intermediate electrode is provided in a position between the first pixel electrode and the second pixel electrode, the intermediate electrode being in contact with a surface of the photoelectric conversion film, the surface being on a side where the first and second pixel electrodes are arranged. | 03-31-2016 |
20160093652 | IMAGING DEVICE - An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit. | 03-31-2016 |
20160093654 | IMAGE SENSOR AND METHOD FOR OPERATING THE SAME - An image sensor includes a photoelectric conversion element suitable for generating photocharges corresponding to incident light, a transfer transistor suitable for transferring the generated photocharges to a floating diffusion node based on a transfer signal, and a reset transistor suitable for resetting the floating diffusion node based on a reset signal and including a memory gate. | 03-31-2016 |
20160093655 | IMAGE SENSOR WITH HYBRID HETEROSTRUCTURE - An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost. By combining the two layers into a stacked structure, the top layer (and any intermediate layer(s)) acts to optically shield the lower layer, thereby allowing charge to be stored and shielded without the need for a mechanical shutter. | 03-31-2016 |
20160093658 | IMAGE-SENSOR STRUCTURES - An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, a plurality of separated color filters formed above the substrate and the photoelectric conversion units, a first light shielding layer surrounding the separated color filters, and a first conductive polymer element blended with a low-refractive-index component filled between the individual separated color filters and between the all separated color filters and the first light shielding layer, wherein the first conductive polymer element is electrically connected to a grounding pad. | 03-31-2016 |
20160093659 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - There is provided a solid-state image pickup device including: a semiconductor substrate ( | 03-31-2016 |
20160097675 | Combined leg structure of micro bridge unit of focal plane array - A combined leg structure of a micro bridge unit of a focal plane array adopts a conductive polymer film or a doped conductive polymer film to serve as an extraction electrode in the micro bridge unit of the focal plane array, which contacts a vanadium oxide thermosensitive film or a doped vanadium oxide thermosensitive film of a bridge surface layer, so as to electrically connect the thermosensitive film of the micro bridge unit with a read-out circuit. The combined leg structure includes three layers: respectively an upper SiNx film layer, a lower SiNx film layer and a middle layer of the conductive polymer film or the doped conductive polymer film. The present invention adopts the conductive polymer film or the doped conductive polymer film having a low thermal conductivity to serve as an electrode material. A bridge leg absorption structure is arranged in the combined leg structure. | 04-07-2016 |
20160099266 | SELF-ALIGNED ISOLATION STRUCTURES AND LIGHT FILTERS - An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters. | 04-07-2016 |
20160099268 | IMAGING APPARATUS AND IMAGING SYSTEM - Provided is an imaging apparatus, including a pixel region in which a plurality of pixels are arranged, the plurality of pixels each including: a plurality of photoelectric converters configured to generate charges corresponding to an amount of incident light; a plurality of charge holding portions arranged correspondingly to the plurality of photoelectric converters and configured to hold charges generated by the plurality of photoelectric converters respectively; and a light condensing portion arranged so as to be shared by the plurality of photoelectric converters and configured to guide the incident light to the plurality of photoelectric converters. In the imaging apparatus, a height (Vb) of a first potential barrier between two charge holding portions included in the a pixel is lower than a height (Va) of a second potential barrier between two charge holding portions included in different pixels. | 04-07-2016 |
20160099273 | IMAGERS WITH DEPTH SENSING CAPABILITIES - An imager may include depth sensing pixels that provide an asymmetrical angular response to incident light. The depth sensing pixels may each include a substrate region formed from a photosensitive portion and a non-photosensitive portion. The depth sensing pixels may include mechanisms that prevent regions of the substrate from receiving incident light. Depth sensing pixel pairs may be formed from depth sensing pixels that have different asymmetrical angular responses. Each of the depth sensing pixel pairs may effectively divide the corresponding imaging lens into separate portions. Depth information for each depth sensing pixel pair may be determined based on the difference between output signals of the depth sensing pixels of that depth sensing pixel pair. The imager may be formed from various combinations of depth sensing pixel pairs and color sensing pixel pairs arranged in a Bayer pattern or other desired patterns. | 04-07-2016 |
20160099276 | IMAGE SENSOR WITH HYBRID HETEROSTRUCTURE - An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost. By combining the two layers into a stacked structure, the top layer (and any intermediate layer(s)) acts to optically shield the lower layer, thereby allowing charge to be stored and shielded without the need for a mechanical shutter. | 04-07-2016 |
20160099280 | IMAGE SENSORS AND METHODS OF FORMING THE SAME - An image sensor is provided. The image sensor includes a red (R) pixel, a green (G) pixel, a blue (B) pixel and an infrared (IR) pixel, and R, G and B filters respectively disposed at the R, G and B pixels. The image sensor also includes an IR pass filter disposed at the IR pixel and an IR filter stacked with the R, G and B filters, wherein the IR filter cuts off at least IR light with a specific wavelength. Furthermore, a method of forming an image sensor is also provided. | 04-07-2016 |
20160099371 | BACK SIDE ILLUMINATED IMAGE SENSOR WITH GUARD RING REGION REFLECTING STRUCTURE - A photon detector includes a single photon avalanche diode (SPAD) disposed proximate to a front side of a semiconductor layer. The SPAD includes a multiplication junction that is reversed biased above a breakdown voltage such that light directed into the SPAD through a backside of the semiconductor layer triggers an avalanche multiplication process. A guard ring is disposed in a guard ring region that surrounds the SPAD to isolate the SPAD in the semiconductor layer. A guard ring region reflecting structure is disposed in the guard ring region proximate to the guard ring and proximate to the front side of the semiconductor layer such that light directed into the guard ring region through the backside of the semiconductor layer that bypasses the SPAD is redirected by the guard ring region reflecting structure back into the semiconductor layer and into the SPAD. | 04-07-2016 |
20160099372 | Gate-controlled Charge Modulated Device for CMOS Image Sensors - A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region. | 04-07-2016 |
20160100115 | ANALOG/DIGITAL CONVERTER AND SOLID-STATE IMAGING DEVICE - An analog/digital converter includes; a ramp signal generation circuit that generates a ramp signal; a comparison circuit that compares potential of an input analog signal with potential of the ramp signal and outputs a comparator output signal if the potential of the ramp signal satisfies the predetermined condition; a count control circuit that divides a predetermined ramp period in which the ramp signal generation circuit outputs the ramp signal into a predetermined number n of divided ramp periods and outputs a count-stop signal; a counter circuit that counts time in the divided ramp period and outputs a count value of the counted time; and a decoder circuit that generates a digital signal according to a count value and a digital value corresponding to any one of the divided ramp periods in which the counter circuit has started counting of time and outputs the generated digital signal. | 04-07-2016 |
20160104732 | IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, AND IMAGE PICKUP APPARATUS DRIVING METHOD - Each of multiple pixels includes a photoelectric conversion unit. A first holding unit is configured to hold a charge generated by the photoelectric conversion unit, at a location different from location of the photoelectric conversion unit. A second holding unit is configured to hold a charge held by the first holding unit at a location different from locations of both of the first holding unit and the photoelectric conversion unit. An amplifying unit includes an input node different from the second holding unit and is configured to output a signal based on a charge transferred to the input node from the second holding unit. A first discharge unit includes a charge draining node which is electrically connected to a line where a predetermined voltage is supplied. The first discharge unit discharges a charge held by the first holding unit to the charge draining node. | 04-14-2016 |
20160104733 | IMAGE PICKUP APPARATUS AND RADIATION IMAGE PICKUP SYSTEM - An image pickup apparatus includes a pixel array including a plurality of pixels arranged in a two-dimensional pattern, each of which includes a conversion unit, an amplification unit, a first holding unit configured to hold a first signal obtained by the amplification unit amplifying an electric charge converted by the conversion unit having a first sensitivity, a second holding unit configured to hold a second signal obtained by the amplification unit amplifying the electric charge converted by the conversion unit having a second sensitivity different from the first sensitivity, and a third holding unit configured to hold an offset signal of the amplification unit, and a correction unit configured to correct the first signal using a second output signal output from the second holding unit or a first output signal output from the first holding unit, and a third output signal output from the third holding unit. | 04-14-2016 |
20160111460 | BACK-LIT PHOTODETECTOR - Described herein are devices operable to detect various portions of radiation incident on a receiving area of the device, systems incorporating the same, methods of using and methods of manufacturing thereof. Such a device comprises a substrate; at least one first feature; and at least one second feature, both extending substantially perpendicularly from the substrate. The at least one first feature and the at least second feature are operable to selectively absorb various portions of the radiation defined by their respective ranges of wavelengths. The at least one first feature and the at least one second feature are positioned on the substrate such that at least 50% of the first portion and at least 50% of the second portion of the radiation incident on the receiving area is selectively absorbed by the at least one first feature and the at least one second feature, respectively. | 04-21-2016 |
20160111461 | Pixels Of Image Sensors, Image Sensors Including The Pixels, And Image Processing Systems Including The Image Sensors - Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident light during a first period, a storage diode configured to store photocharges accumulated in the photo diode and a storage gate configured to control transfer of the photocharges accumulated in the photo diode to the storage diode. The storage gate may include a vertical gate structure extending toward the photo diode. | 04-21-2016 |
20160111562 | MULTISPECTRAL AND POLARIZATION-SELECTIVE DETECTOR - Described herein are devices operable to detect various portions of radiation incident on a receiving area of the device, systems incorporating the same, methods of using and methods of manufacturing thereof. Such a device comprises a substrate; at least one first feature; and at least one second feature, both extending substantially perpendicularly from the substrate. The at least one first feature and the at least second feature are operable to selectively absorb various portions of the radiation defined by their respective ranges of wavelengths and linear polarization. The at least one first feature and the at least one second feature are positioned on the substrate such that at least 50% of the first portion and at least 50% of the second portion of the radiation incident on the receiving area is selectively absorbed by the at least one first feature and the at least one second feature, respectively. | 04-21-2016 |
20160112660 | PHOTOELECTRIC CONVERSION ELEMENT, IMAGE READING DEVICE, IMAGE FORMING APPARATUS, AND PHOTOELECTRIC CONVERSION METHOD - A photoelectric conversion element includes a light receiving element, a buffer unit, a current control circuit, and an elimination circuit. The light receiving element generates electrical charge according to an amount of light received. The buffer unit buffers and outputs a voltage signal according to the electrical charge generated by the light receiving element. When the buffer unit outputs the voltage signal, the current control circuit controls electric current flowing through the buffer unit so as to be a predetermined amount of electric current. The elimination circuit eliminates high-frequency components in a band equal to or higher than a predetermined band from the voltage signal output from the buffer unit. | 04-21-2016 |
20160112665 | IMAGE SENSOR - An image sensor comprises an array of pixels comprising: a pinned photodiode; a first sense node A; a second sense node B; a transfer gate TX connected between the pinned photodiode and the first sense node A; a first reset transistor M | 04-21-2016 |
20160116333 | ANALOG-TO-DIGITAL CONVERSION CIRCUIT, IMAGING APPARATUS AND IMAGING SYSTEM - An analog-to-digital conversion circuit includes: a plurality of comparators comparing an analog signal with a reference signal; a counter generating a count signal having a plurality of bits in Gray code; a plurality of first signal wirings each transmitting one of bits of the count signal from the counter to the plurality of memories each having a plurality of bit memories; and a plurality of second signal wirings, each connecting between the bit memories of the plurality of memories. Each of the second signal wirings is connected to one of the plurality of first signal wirings, and the first signal wirings and/or the second signal wirings include a signal wiring transmitting a signal of least significant bit in the count signal arranged between the plurality of other signal wirings each transmitting a signal of a bit different from the least significant bit in the count signal. | 04-28-2016 |
20160118424 | SPLIT-GATE CONDITIONAL-RESET IMAGE SENSOR - In a pixel array within an integrated-circuit image sensor, a pixel ( | 04-28-2016 |
20160118428 | COLOR AND INFRARED IMAGE SENSOR WITH DEPLETION ADJUSTMENT LAYER - An image sensor pixel includes a photodiode region formed in a semiconductor layer, a pinning layer and a depletion adjustment layer. The photodiode region receives visible and infrared light from a light incident side of the image sensor pixel. The pinning layer is disposed between a front surface of the semiconductor layer and the photodiode region, while the depletion adjustment layer is disposed between the pinning layer and the photodiode region. The depletion adjustment layer is configured to adjust a depletion region of the photodiode region to reduce charge carriers induced in the photodiode region by the received infrared light. | 04-28-2016 |
20160119567 | SOLID-STATE IMAGING APPARATUS - There is a need to provide a solid-state imaging apparatus capable of highly accurately analog-to-digital converting an analog voltage output from a pixel circuit. The solid-state imaging apparatus supplies a counter code to an integral A/D converter. The counter code CD includes 3-phase clock signals and gray signals. The clock signals each have a cycle equal to specified cycle multiplied by 8 and allow phases to shift from each other by specified cycle. The gray signals linearly increase count values at a cycle equal to specified cycle multiplied by 4. The counter code reverses only the logical level of a signal when a count value changes. A count value error can be limited to a minimum. | 04-28-2016 |
20160126269 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device comprises a photodetecting section, an unnecessary carrier capture section, and a vertical shift register. The unnecessary carrier capture section has carrier capture regions arranged in a region between the photodetecting section and the vertical shift register for respective rows. Each of the carrier capture regions includes a transistor and a photodiode. The transistor has one terminal connected to the photodiode and the other terminal connected to a charge elimination line. The charge elimination line is short-circuited to a reference potential line. | 05-05-2016 |
20160126272 | CURVED IMAGE SENSOR, METHOD FOR FABRICATING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME - The curved image sensor may include: a first substrate including a plurality of photoelectric conversion elements and having a curved first surface; a bonding pattern formed over a second surface opposite to the first surface of the first substrate, formed along an edge of the first substrate, and having an opening; a second substrate bonded to the second surface of the first substrate by the bonding pattern; and a sealing material filling the opening so that a cavity defined by the first substrate, the second substrate, and the bonding pattern is sealed by the sealing material. | 05-05-2016 |
20160131869 | PHOTOGRAPHING OPTICAL LENS ASSEMBLY, IMAGE CAPTURING DEVICE AND ELECTRONIC DEVICE - A photographing optical lens assembly includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element with positive refractive power has a convex object-side surface. The second lens element with negative refractive power has a convex object-side surface and a concave image-side surface. The third lens element has refractive power. The fourth lens element has refractive power, and an object-side surface and an image-side surface thereof are aspheric. The fifth lens element with negative refractive power has a concave image-side surface, wherein an object-side surface and the image-side surface thereof are aspheric, and at least one of the object-side surface and the image-side surface thereof has at least one inflection point. | 05-12-2016 |
20160134297 | METHOD AND DEVICE FOR ANALOG/DIGITAL CONVERSION OF AN ANALOG SIGNAL - A method includes a first analog/digital conversion of an analog signal over m bits, with m less than n, associated with a first full-scale value, and a second analog/digital conversion of the analog signal over m bits associated with a second full-scale value 2 | 05-12-2016 |
20160134820 | METHOD AND APPARATUS FOR INCREASING PIXEL SENSITIVITY AND DYNAMIC RANGE - According to one aspect, embodiments herein provide a unit cell comprising a photodiode, a MOSCap having an input node coupled to the photodiode, a reset switch selectively coupled between the MOSCap and a reset voltage, and a transistor coupled to the input node of the MOSCap, wherein, in a first mode of operation of the unit cell, the reset switch is configured in an open state and charge generated by light incident on the photodiode accumulates at the input node of the MOSCap in response to voltage at the input node being less than a threshold voltage, and wherein, in a second mode of operation of the unit cell, the reset switch is configured in the open state and the charge generated by the light incident on the photodiode accumulates on the MOSCap in response to the voltage at the input node being greater than the threshold voltage. | 05-12-2016 |
20160138968 | APPARATUS AND METHOD FOR CHECKING THE INTEGRITY OF VISUAL DISPLAY INFORMATION - The invention provides an apparatus and method for checking the integrity of visual display information and has particular application to checking images displayed in an automotive vehicle, such images containing safety critical information. The image intensity is checked only to an extent commensurate with a human being able to interpret its correct meaning. Hence, images which are defective in some way yet still recognisable by the human eye are not classified as failures. In one embodiment, a part of the image containing safety critical information is segmented into smaller areas and the luminance of pixels in each segmented area is compared with a threshold brightness level and a threshold darkness level. A histogram for each area is generated and compared with a reference. | 05-19-2016 |
20160141326 | SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREFOR, AND ELECTRONIC APPARATUS - A pixel in which both phase difference detection and image generation are performed can be implemented with a more simple structure. Each of a plurality of pixels two-dimensionally arranged in a matrix shape includes a first photoelectric conversion unit and a second photoelectric conversion unit both configured to photoelectrically convert light entering via one micro lens. A first reading circuit reads an electric charge generated at the first photoelectric conversion unit and a second reading circuit reads an electric charge generated at the second photoelectric conversion unit. A transistor connects a first electric charge holding unit included in the first reading circuit to a second electric charge holding unit included in the second reading circuit. The present technology is applicable to, for example, a solid-state imaging device that detects a phase difference. | 05-19-2016 |
20160141327 | CMOS IMAGE SENSOR WITH SIGMA-DELTA TYPE ANALOG-TO-DIGITAL CONVERSION - A CMOS image sensor including a plurality of pixels, each including: a photodiode; a sigma-delta modulator of order p, p being an integer greater than or equal to 1, capable of delivering a binary digital signal representative of the illumination level of the photodiode; and a configurable connection circuit enabling to couple the sigma-delta modulator of the pixel to a sigma-delta modulator of another pixel, so that the modulators of the two pixels form with each other a sigma-delta modulator of order greater than p. | 05-19-2016 |
20160146723 | ANALYZING DEVICE AND ANALYZING METHOD - An analyzing device, comprising: a light source device; an image pick-up device that generates image data by capturing a biological tissue illuminated with light emitted by the light source device; and an index calculation unit configured to calculate an index representing a molar ratio between first and second biological substances contained in the biological tissue based on the image data, wherein: the light source device switches between light of a first illumination wavelength range which the first and second biological substances absorb and light of a second illumination wavelength range lying within the first illumination wavelength range; and the index calculation unit calculates the index based on first image data obtained by capturing the biological tissue under illumination of the light of the first illumination wavelength range and second image data obtained by capturing the biological tissue under illumination of the light of the second illumination wavelength range. | 05-26-2016 |
20160147114 | ARRAY TEST MODULATOR AND DEVICE FOR INSPECTING THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME - An array test modulator, including a first glass; a second glass facing the first glass and including a common electrode; a liquid crystal layer between the first glass and the second glass; and a reflection layer between the second glass and the liquid crystal layer and including a metal oxide layer. | 05-26-2016 |
20160150175 | GLOBAL SHUTTER IMAGE SENSOR PIXELS HAVING IMPROVED SHUTTER EFFICIENCY - An image sensor may be provided with an array of image sensor pixels formed on a substrate having front and back surfaces. Each pixel may have a photodiode that receives light through the back surface, a floating diffusion node, a charge transfer gate, and first and second reset transistor gates. A source follower transistor may have a gate coupled to the floating diffusion node and a source coupled to an addressing transistor. The pixel may be coupled to a column feedback amplifier through the addressing transistor and a column feedback reset path. The amplifier may provide a kTC-reset noise compensation voltage to the reset transistors for storage on a holding capacitor coupled between the floating diffusion and a drain terminal of the source follower. The floating diffusion may be bounded at the front surface by the transfer gate, the reset gate, and p-type doped regions. | 05-26-2016 |
20160155768 | IMAGE SENSOR PIXEL WITH MULTIPLE STORAGE NODES | 06-02-2016 |
20160161218 | Multi-Target Optical Designator - A device and method for selectively illuminating and designating multiple targets in the air or on the ground simultaneously. The device comprises a light source, a switching array and a ball lens. Light from the light source is routed through the switching array, which can addressably output multiple light beams simultaneously. The light beams from the switching array illuminate the backside of a low F-number ball lens. The ball lens creates highly collimated output beams independently (and simultaneously) from any of the output source points of the switching array. These output beams can be used to simultaneously designate multiple targets. When the target illuminating device includes an optional detector array, light scattered from targets can be refracted by the balls lens to impinge on the detector array. Signals from the detector array representing the received light beams can be used for target imaging. | 06-09-2016 |
20160161333 | METHOD AND SYSTEM FOR PERFORMING TESTING OF PHOTONIC DEVICES - A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide. | 06-09-2016 |
20160169736 | HIGH RESOLUTION THERMO-ELECTRIC NANOWIRE AND GRAPHENE COUPLED DETECTOR SYSTEM | 06-16-2016 |
20160169737 | SYSTEMS AND METHODS FOR SORTING AND SUMMING SIGNALS FROM AN IMAGING DETECTOR | 06-16-2016 |
20160170045 | SYSTEMS AND METHODS FOR POSITRON EMISSION TOMOGRAPHY SIGNAL ISOLATION | 06-16-2016 |
20160190192 | CHIP SCALE PACKAGE CAMERA MODULE WITH GLASS INTERPOSER AND METHOD FOR MAKING THE SAME - One or more embodiments disclosed herein are directed to a chip scale package camera module that includes a glass interposer between a lens and an image sensor. In some embodiments, the glass interposer is made from one or more layers of optical quality glass and includes an infrared filter coating. The glass interposer also includes electrically conductive paths to connect the image sensor, mounted on one side of the glass interposer, with other components such as capacitors, which may be mounted on a different side of the glass interposer, and the rest of the camera system. The conductive layers include traces and vias that are formed in the glass interposer in areas away from the path of light in the camera module, such that the traces and vias do not block the light between the lens and the image sensor. | 06-30-2016 |
20160190193 | TWO-DIMENSIONAL SOLID-STATE IMAGE CAPTURE DEVICE WITH POLARIZATION MEMBER AND COLOR FILTER FOR SUB-PIXEL REGIONS AND POLARIZATION-LIGHT DATA PROCESSING METHOD THEREFOR - A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane. | 06-30-2016 |
20160190197 | PIXEL ARRAY AREA OPTIMIZATION USING STACKING SCHEME FOR HYBRID IMAGE SENSOR WITH MINIMAL VERTICAL INTERCONNECTS - Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed. | 06-30-2016 |
20160195385 | METHOD AND ARRANGEMENT FOR MEASURING INTERNAL THREADS OF A WORKPIECE WITH AN OPTICAL SENSOR | 07-07-2016 |
20160195431 | PHOTOELECTRIC CONVERSION DEVICE, IMAGE GENERATION DEVICE, AND METHOD OF CORRECTING OUTPUT OF PHOTOELECTRIC CONVERSION DEVICE | 07-07-2016 |
20160195573 | PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION APPARATUS AND SOLID-STATE IMAGING APPARATUS | 07-07-2016 |
20160198104 | IMAGE SENSOR WITH A SPLIT-COUNTER ARCHITECTURE | 07-07-2016 |
20160377479 | METHODS AND APPARATUS FOR AN OPTICAL SYSTEM OUTPUTTING DIFFUSE LIGHT AND HAVING A SENSOR - In some embodiments, an apparatus includes a housing and an image sensor that is coupled to the housing and has a field of view. The apparatus also includes a non-imaging optical system coupled to the housing and disposed outside of the field of view of the image sensor. The non-imaging optical system can output diffuse light in a set of directions to a surface to produce scattered light. The image sensor and the non-imaging optical system are collectively configured such that during operation, the image sensor receives at least a portion of the scattered light. | 12-29-2016 |
20170234730 | IMAGING DEVICE AND ELECTRONIC DEVICE | 08-17-2017 |
20170236862 | SOLID-STATE IMAGING DEVICE | 08-17-2017 |
20180026064 | IMAGING DEVICE | 01-25-2018 |
20180027197 | UNIT PIXEL APPARATUS AND OPERATION METHOD THEREOF | 01-25-2018 |
20190149686 | Contact Image Sensor and Image Scanning Device | 05-16-2019 |