Entries |
Document | Title | Date |
20080217538 | Optical Semiconductor Device - The present invention provides an optical semiconductor device including a semiconductor thin film ( | 09-11-2008 |
20080224045 | ULTRA-SENSITIVE SILICON SENSOR, LONG-WAVE INFRARED MICROANTENNA - Hybrid microantennas and improved sensor structures incorporating hybrid microantenna embodiments are described herein. A hybrid long-wave infrared (LWIR) microantenna includes four inner pie-shaped arms in which the four inner pie-shaped arms are in a double bow-tie configuration and a plurality of outer pie-shaped arms in which a subset of the outer pie-shaped arms is connected to the four inner pie-shaped arms and the pie-shaped arms are sensitive to electric fields and absorb radiation. | 09-18-2008 |
20080224046 | Method of Treating Non-Refrigerated, Spectrally-Selective Lead Selenide Infrared Detectors - The invention relates to a method of processing non-refrigerated lead selenide infrared detectors, consisting in: 1) selecting the substrate and preparing same; 2) delineating and depositing multilayer interference filters; and 3) treating polycrystalline lead selenide infrared detectors on the interference filters, comprising the following steps, namely 3a) metal deposition, 3b) delineation of the metal deposit, 3c) delineation of the sensor, 3d) PbSe deposition by means of thermal evaporation, 3f) processing of sensor, 3g) thermal treatment in order to sensitise the active material, and 3h) deposition of a passivator layer on the active material. The inventive method is unique in that it can be used to treat differently-shaped non-refrigerated infrared detectors on the same substrate, including discrete elements, multielements, linear matrices, two-dimensional matrices, etc., with the responses of each being modified by design by the corresponding interference filter. The invention is suitable for low-cost infrared detectors that are used for process control, gas analyses, temperature measurements, military applications, etc. | 09-18-2008 |
20080237468 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF - This disclosure concerns a solid-state imaging device including a pixel thermally separated from a substrate; a heat conduction switch having one end connected to the substrate and other end capable of contacting to the substrate or the pixel, the heat conduction switch changing over a state of the pixel to one of a first state and a second state, the first state being a state in which the pixel is thermally isolated from the substrate by causing the other end of the heat conduction switch to contact with the substrate, the second state being a state in which the pixel is thermally shorted to the substrate by causing the other end of the heat conduction switch to contact with the pixel; and a signal detector detecting a difference between the signal voltage of the pixel in the first state and the signal voltage of the pixel in the second state. | 10-02-2008 |
20080251723 | Electromagnetic and Thermal Sensors Using Carbon Nanotubes and Methods of Making Same - Electromagnetic radiation detecting and sensing systems using carbon nanotube fabrics and methods of making the same are provided. In certain embodiments of the invention, an electromagnetic radiation detector includes a substrate, a nanotube fabric disposed on the substrate, the nanotube fabric comprising a non-woven network of nanotubes, and first and second conductive terminals, each in electrical communication with the nanotube fabric, the first and second conductive terminals disposed in space relation to one another. Nanotube fabrics may be tuned to be sensitive to a predetermined range of electromagnetic radiation such that exposure to the electromagnetic radiation induces a change in impedance between the first and second conductive terminals. The detectors include microbolometers, themistors and resistive thermal sensors, each constructed with nanotube fabric. Nanotube fabric detector arrays may be formed for broad-range electromagnetic radiation detecting. Methods for making nanotube fabric detectors, arrays, microbolometers, thermistors and resistive thermal sensors are each described. | 10-16-2008 |
20080265164 | THERMAL DETECTOR FOR ELECTROMAGNETIC RADIATION AND INFRARED DETECTION DEVICE USING SUCH DETECTORS - A thermal detector comprising a sensitive material having at least one electrical property of which varies with temperature; an electromagnetic radiation absorber which is in contact with the sensitive material; a substrate providing the function of support; and electrically conductive elements providing electrical continuity between sensitive material and substrate. The sensitive material is wholly or partly in the form of a sheet extending in a direction which is essentially perpendicular to the plane of the substrate. The sensitive material is suspended above the substrate by the absorber which is fixed to the sensitive material in the upper region of the sheet. The absorber is suspended by fixing means which is mechanically connected to the substrate. | 10-30-2008 |
20080283752 | Electromagnetic Wave Sensor with Terahertz Bandwidth - The field of the invention is that of the detection of high frequency electromagnetic waves. The invention can be applied to a very wide range of bandwidths, but the preferred field of application is the terahertz frequency domain. The core of the detection device involves a so-called active material with an absorption coefficient in the optical domain that depends on the intensity of the terahertz signal to be detected. By measuring the variations of the absorption coefficient by means of an optical probe, the intensity of the terahertz signal is thus determined. By this means, a frequency translation is performed in a frequency domain where the measurement no longer poses technical problems. It is notably possible to improve the sensitivity of the detector by having antennas suited to the active medium, by using semiconductor or quantum well materials. In this case, it is also possible to produce a matrix or an array of terahertz sensors, thereby enabling either terahertz imaging or terahertz spectroscopy to be carried out. | 11-20-2008 |
20080315101 | DIAMOND-LIKE CARBON INFRARED DETECTOR AND ASSOCIATED METHODS - Diamond-like carbon based energy conversion devices and methods of making and using the same are disclosed. Such devices may include a surface for detection of infrared photons. Such a surface may include at least one metal cone and a diamond-like carbon layer disposed on the at least one metal cone. The at least one diamond-like carbon-coated metal cone is thus configured to receive infrared photons and generate electrons therefrom. In another aspect, the at least one metal cone may be an array of electronically coupled metal cones. | 12-25-2008 |
20090008557 | INFRARED RECEIVING MODULE - An infrared receiving module is disclosed. The infrared receiving module including a first strip element, a second strip element, an infrared receiver disposed on the second strip element, and a resin wrapping the first strip element and the second strip element. The first strip element has a receiving window. The infrared receiver on the second strip element is under the receiving window. | 01-08-2009 |
20090026372 | INFRARED SENSOR AND METHOD FOR MANUFACTURING INFRARED SENSOR - An economical and highly reliable infrared sensor with a wide field of view and a method for economically manufacturing a highly reliable infrared sensor with a wide field of view includes a package having supporting portions that support an optical filter at a location below the upper surfaces of sidewalls of the package and recessed portions that communicate with gaps between side surfaces of the optical filter supported by the supporting portions and the sidewalls of the package. An adhesive is supplied to the recessed portions while the optical filter is supported by the supporting portions such that the adhesive flows into the gaps between the optical filter and the sidewalls of the package by capillary action and such that the optical filter is fixed to an opening of the package via the adhesive. The optical filter is fixed to the package via the adhesive by applying the adhesive such that the adhesive spreads over substantially the entire circumference of the optical filter. | 01-29-2009 |
20090072144 | INFRARED RETINA - Exemplary embodiments provide an infrared (IR) retinal system and method for making and using the IR retinal system. The IR retinal system can include adaptive sensor elements, whose properties including, e.g., spectral response, signal-to-noise ratio, polarization, or amplitude can be tailored at pixel level by changing the applied bias voltage across the detector. “Color” imagery can be obtained from the IR retinal system by using a single focal plane array. The IR sensor elements can be spectrally, spatially and temporally adaptive using quantum-confined transitions in nanoscale quantum dots. The IR sensor elements can be used as building blocks of an infrared retina, similar to cones of human retina, and can be designed to work in the long-wave infrared portion of the electromagnetic spectrum ranging from about 8 μm to about 12 μm as well as the mid-wave portion ranging from about 3 μm to about 5 μm. | 03-19-2009 |
20090078872 | Doped Carbon Nanostructure Field Emitter Arrays for Infrared Imaging - An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are absorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function. | 03-26-2009 |
20090084958 | BOLOMETER - Bolometers utilize an organic semiconductor diode layer assembly for temperature measurement. These bolometers are particularly sensitive to the infrared wave range so that they are employable as infrared sensors and may be combined to form one-dimensional sensor rows or two-dimensional microbolometer arrays. | 04-02-2009 |
20090095909 | BOLOMETER TYPE UNCOOLED INFRARED RAY SENSOR AND METHOD FOR DRIVING THE SAME - A bolometer type uncooled infrared ray sensor includes: an image pickup region having detection pixels arranged in a matrix form on a semiconductor substrate to detect incident infrared rays; a plurality of row selection lines provided in the image pickup region; current sources capable of letting constant currents flow through the respective row selection lines; a plurality of signal lines provided in the image pickup region; voltage readout circuits provided so as to respectively correspond to the signal lines to read out signal voltages generated on the respectively corresponding signal lines; coupling capacitances respectively provided between the respective signal lines and the corresponding voltage readout circuits; and a calculator which calculates a difference between two signal voltages read out by the voltage readout circuits, corresponding to outputs of the same detection pixel for two different current values supplied from the current sources. | 04-16-2009 |
20090114819 | INFRARED SENSOR UNIT AND PROCESS OF FABRICATING THE SAME - An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer. | 05-07-2009 |
20090127462 | nBn AND pBp INFRARED DETECTORS WITH GRADED BARRIER LAYER, GRADED ABSORPTION LAYER, OR CHIRPED STRAINED LAYER SUPER LATTICE ABSORPTION LAYER - An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed. | 05-21-2009 |
20090140147 | PIXEL STRUCTURE HAVING AN UMBRELLA TYPE ABSORBER WITH ONE OR MORE RECESSES OR CHANNELS SIZED TO INCREASE RADIATION ABSORPTION - A pixel structure for use in an infrared imager is provided. The pixel structure includes a substrate and a bolometer. The bolometer includes a transducer that has a spaced apart relationship with respect to the substrate and has an electrical resistance that varies in response to changes in the temperature of the transducer. The bolometer also includes an absorber that has a spaced apart relationship with respect to the transducer and has a thermal connection to the transducer permitting radiation absorbed by the absorber to heat the transducer. The absorber has a top side defining a recess or channel in the absorber. The recess or channel is adapted to effect the propagation path of a portion of radiation received by the absorber such that the radiation portion is absorbed by the absorber rather than exiting the absorber. The recess or channel also decreases the thermal mass of the bolometer. | 06-04-2009 |
20090140148 | BOLOMETER AND METHOD OF MANUFACTURING THE SAME - A bolometer having decreased noise and increased temperature sensitivity and a method of manufacturing the same are provided. The bolometer has a resistive layer formed of single crystalline silicon (Si) or silicon germanium (Si | 06-04-2009 |
20090146059 | THERMAL-TYPE INFRARED IMAGE SENSING DEVICE AND METHOD OF PRODUCING THE SAME - An infrared image sensing device is provided having a pixel structure in which an output level as a reference voltage of a reference-pixel element is close to that of a pixel element. A thermal-type infrared image sensing device including pixel elements, being two-dimensionally arranged on a semiconductor substrate, each having a detector for detecting temperature, an infrared-light absorber, supported above the detector apart therefrom through a connector thereon, for absorbing incident infrared light and converting the light into heat, and a support for supporting the detector apart from the semiconductor substrate, includes reference-pixel elements, arranged adjacent to and along a row of the pixel elements, each for generating a reference signal to be a reference for a signal generated by each of the pixel elements, each having a structure for shielding a detector from incident infrared light, in which the detectors of the pixel elements and the reference-pixel elements each are connected to the semiconductor substrate through the respective supports. According to such a configuration, the difference between output levels from the reference-pixel element and the pixel element due to self-heat generation accompanying an operation of reading pixel signals is not significantly generated, and therefore the output level from the reference-pixel element is to be an ideal reference voltage. | 06-11-2009 |
20090152466 | MICROBOLOMETER WITH IMPROVED MECHANICAL STABILITY AND METHOD OF MANUFACTURING THE SAME - Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer. | 06-18-2009 |
20090152467 | MULTILAYER-STRUCTURED BOLOMETER AND METHOD OF FABRICATING THE SAME - Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance. | 06-18-2009 |
20090173883 | MULTI-BAND FOCAL PLANE ARRAY - A multi-band focal plane array architecture operative to detect multiple spectral image. The multi-band focal plane array architecture has an integrated readout circuit, a plurality of first detectors integrated in the readout circuit and a plurality of second detectors deposited on the readout circuit. Preferably, the first detectors are operative to detect visible signals and the second detectors are operative to detect infrared signals. The first and second detectors are arranged in a checkerboard pattern, in alternate rows or columns, or at least partially overlapped with each other to realize simultaneous detection in two different wavelength bands. The architecture may also have an additional integrated readout circuit flip-chip bonded to the integrated readout circuit. By forming a plurality of third detectors on the additional integrated readout circuit, a tri-band focal plane array may be realized. In one embodiment, a dual-band focal plane array architecture by forming two arrays of detectors on two individual integrated readout circuit and flip-chip bonding these two readout circuits. | 07-09-2009 |
20090184246 | Infrared detector and fabricating method of infrared detector - There is provided an infrared detector including: a silicon substrate provided with a concave portion; an infrared receiver having a polysilicon layer; and a beam that supports the infrared receiver above the concave portion, and extends along a side of the infrared receiver from the infrared receiver to connect with the silicon substrate, the beam having at least two bent portions, wherein at least one of the bent portions of the beam is disposed at a position on a side opposite to the concave portion with the polysilicon layer as a reference point. | 07-23-2009 |
20090218492 | Radiation sensor device and method - A radiation sensor device including an integrated circuit chip including a radiation sensor on a surface of the integrated chip, one or more electrical connections configured to connect between an active surface of the integrated circuit chip and a lead frame, a cap attached to said integrated circuit chip spaced from and covering said radiation sensor, the cap having a transparent portion defining a primary lens transparent to the radiation to be sensed, a secondary lens disposed in a recess proximate and spaced from said primary lens transparent to the radiation to be sensed, and an air gap between said primary lens and said secondary lens. | 09-03-2009 |
20090218493 | WIDE SPECTRAL RANGE HYBRID IMAGE DETECTOR - An apparatus for detecting radiation of a plurality of wavelengths of the electromagnetic spectrum may be provided. The apparatus includes a substrate, a laser irradiated layer proximal to a first side of the substrate, and a microbolometer and at least one readout circuit proximal to a second side of the substrate in electrical communication with the laser irradiated layer. The substrate, laser irradiated layer, and the microbolometer are disposed and arranged such that radiation of a first wavelength is substantially detected by the laser irradiated layer, and radiation of a second wavelength is substantially detected by the microbolometer. | 09-03-2009 |
20090236525 | Spectrally Tunable Infrared Image Sensor Having Multi-Band Stacked Detectors - A tunable infrared detector is provided that includes a substrate, a bottom wavelength detector formed over the substrate, a top wavelength detector formed over the first wavelength detector layer, and an interferometer filter formed over the top wavelength detector layer and the bottom wavelength detector layer. The interferometer filter is operatively configured to pass a first wavelength associated with a first portion of a predetermined band and a second wavelength associated with a second portion of the predetermined band to the top wavelength detector. The top wavelength detector is operatively configured to detect each wavelength associated with the first portion of the predetermined band and to transmit each wavelength associated with the second portion of the predetermined band to the bottom wavelength detector. The bottom wavelength detector is operatively configured to detect each wavelength associated with the second portion of the predetermined band. | 09-24-2009 |
20090236526 | INFRARED RAY SENSOR ELEMENT - An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part. | 09-24-2009 |
20090250612 | POST-SUPPORTED MICROBOLOMETER PIXEL - A post-supported bolometer pixel and a process for manufacturing it comprising the steps of depositing a sacrificial layer over a substrate with readout integrated circuit pads that connect to the integrated circuit; forming vias through the sacrificial layer to the metal pads connecting to the readout integrated circuit; filling the vias with metal and polishing said metal to the surface of the sacrificial layer; forming microbolometer pixel layers over the filled vias and sacrificial layer; and removing the sacrificial layer to leave a post-supported pixel. | 10-08-2009 |
20090266987 | INFRARED DETECTOR AND SOLID STATE IMAGE SENSOR HAVING THE SAME - An infrared detector includes: a readout wiring portion provided on a semiconductor substrate; a support structure portion disposed over a concave portion formed in a surface portion of the semiconductor substrate, the support structure portion having connection wiring connected electrically to the readout wiring portion; and a cell portion disposed over the concave portion and supported by the support structure portion. The cell portion includes: an infrared absorption layer absorbing incident infrared rays; and a plurality of thermoelectric conversion elements connected electrically to the support structure portion and insulated electrically from the infrared absorption layer to generate an electric signal by detecting a temperature change of the cell portion, each of the thermoelectric conversion elements includes a semiconductor layer, a p-type silicon layer and an n-type silicon layer formed with a space between them in the semiconductor layer, and a polysilicon layer formed on the semiconductor layer between the p-type silicon layer and the n-type silicon layer. | 10-29-2009 |
20090272903 | Infrared detector, infrared detecting apparatus, and method of manufacturing infrared detector - An infrared detector comprises: a reflection portion transmitting far- and middle-infrared rays and reflecting near-infrared and visible rays; a photo-current generating portion having a quantum well structure in which electrons are excited by the far- and middle-infrared rays having passed through the reflection portion so as to generate photo-current; a light emitting portion having a quantum well structure into which electrons of the photo-current generated by the photo-current generating portion are injected and the electrons thus injected thereinto are recombined with holes, thus emitting near-infrared and visible rays; and a photo-detecting portion detecting the near-infrared and visible rays emitted from the light emitting portion, and detecting the near-infrared and visible rays emitted from the light emitting portion and reflected by the reflection portion. The reflection portion, the photo-current generating portion, and the light emitting portion are made of group III-V compound semiconductors layered on a semiconductor substrate. | 11-05-2009 |
20090314941 | Infrared detecting device and manufacturing method thereof - The present invention provides an infrared detecting device capable of improving device characteristics thereof by narrowing the width of each beam portion. The infrared detecting device has an infrared detection portion having a thermoelectric transducing part formed over a semiconductor substrate via an air gap interposed therebetween, and the beam portions which are formed over the semiconductor substrate via the air gap interposed therebetween, support the infrared detection portion and electrically connect between the infrared detection portion and the semiconductor substrate, wherein each of the beam portions has an insulating material film and a conductive material layer exposed from the insulating material film to a side surface of each beam portion. | 12-24-2009 |
20090321641 | BIPOLAR JUNCTION TRANSISTOR-BASED UNCOOLED INFRARED SENSOR AND MANUFACTURING METHOD THEREOF - A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics. | 12-31-2009 |
20090321642 | PHOTODETECTOR WITH DARK CURRENT REDUCTION - A detector of incident infrared radiation has a first region with a first spectral response, and a second region with a second, different spectral response. The second absorption region is stacked on the first and may be separated therefrom by a region in which the chemical composition of the compound semiconductor is graded. Separate contacts are provided to the first and second absorption regions and a further common contact is provided so as to permit the application of either a bias voltage or a skimming voltage across the respective pn junctions. The detector may be operated such that a preselected one of the absorption regions responds to incident infrared radiation of a predetermined waveband while the other absorption region acts as a skimmer of dark current, thereby enhancing the signal to noise ratio of the detector. | 12-31-2009 |
20090321643 | DETECTOR FOR AND A METHOD OF DETECTING ELECTROMAGNETIC RADIATION - A detector unit ( | 12-31-2009 |
20090321644 | BOLOMETER AND METHOD OF PRODUCING A BOLOMETER - A bolometer includes a membrane, a first spacer and a second spacer, the membrane including resistive and contact layers. At a side facing a foundation, the contact layer has a first contact region at which the first spacer electrically contacts the contact layer, and a second contact region at which the second spacer electrically contacts the contact layer. In this manner, the membrane is kept at a predetermined distance to the foundation. The contact layer is laterally interrupted by a gap, so that the contact layer is subdivided at least into two parts, the first part including the first contact region, and the second part including the second contact region, and no direct connection existing within the contact layer from the first contact region to the second contact region, and the resistive layer being in contact with the first and second parts of the contact layer. | 12-31-2009 |
20100001188 | Method of construction of CTE matching structure with wafer processing and resulting structure - A method includes bonding a first side of a metal shim to a silicon shim, removing metal from the metal shim to form a plurality of cleared metal lanes in accordance with a pattern, bonding a readout integrated circuit having a plurality of saw lanes in accordance with the pattern to a second side of the metal shim to form a wafer assembly wherein the plurality of saw lanes is aligned with the plurality of cleared metal lanes, and dicing the wafer assembly. | 01-07-2010 |
20100025584 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels. | 02-04-2010 |
20100032569 | Multi-function light sensor - The light sensor according to an exemplary embodiment of the present invention is a multi-function light sensor that is equipped at low cost with both an ultraviolet light sensor and a visible light sensor and suppresses leak current between adjacent elements on the same substrate. The light sensor is equipped with a SOI substrate, formed from a silicon oxide insulating film and a silicon semiconductor layer made up from single crystal silicon, on a silicon substrate. Photodiodes PD1 and PD2 are formed on the silicon substrate, and a photodiode UV-PD, and main portions (source, drain and channel regions) of a MOSFET configuring a control circuit, are formed in the silicon semiconductor layer on the insulating film. | 02-11-2010 |
20100038542 | Wideband Semiconducting Light Detector - A detector incorporating a laser-doped element that is favorably absorbing to at least a portion of the electromagnetic spectrum, for example in the infra-red range, is used in a light detector article. Readout circuits permitting a detector to operate in a substantial range of the electromagnetic spectrum, including the visual and infra-red range, enable day and night imaging in some embodiments. Configurations for making the detectors are also disclosed. | 02-18-2010 |
20100044569 | INFRARED DETECTOR WITH CARBON NANOTUBE YARNS - An infrared detector based on CNT yarns includes a first electrode, a second electrode and a composite film between the first electrode and the second electrode. A first end of the composite film is electrically connected to the first electrode. A second end of the composite film and the second electrode cooperatively define a gap therebetween. The composite film is capable of extending in a direction towards the second electrode and, thereby forming an electrical connection between the first and the second electrodes when the composite film is illuminated by infrared light. The composite film includes a polymer layer, a plurality of semiconducting CNT yarns dispersed in the polymer layer, and a plurality of metallic CNT yarns dispersed in the polymer layer. Each semiconducting CNT yarn includes a plurality of twisted semiconducting CNTs. Each metallic CNT yarn includes a plurality of twisted metallic CNTs. | 02-25-2010 |
20100072368 | Spectral Measuring System - A spectral measuring system for determining substance properties using terahertz radiation comprises: one or more radiation sources of which at least one radiation source is adjustable or configurable with regard to its wavelength, wherein the first radiation source emits first radiation at a predetermined first wavelength; and is characterised by a sensor which responds to further radiation which is based on the radiation of the at least one radiation source; a control unit which is connected to the at least one radiation source and the sensor; wherein the control unit is configured to trigger at least one radiation source and to adjust the wavelength of the at least one adjustable radiation source as well as to read out the sensor. | 03-25-2010 |
20100072369 | VISIBLE-REGION LIGHT MEASURING INSTRUMENT AND VISIBLE-REGION LIGHT MEASURING INSTRUMENT MANUFACTURING METHOD - There is provided a visible-region light measuring instrument including: a first photodiode and a second photodiode. At least one of the first photodiode and the second photodiode comprises plural photodiodes, when the first photodiode comprises a first plural photodiodes, the visible-region light measuring instrument has first fuses that control connections between the first plural photodiodes and at least one of the first node and the first power supply node. When the second photodiode comprises a second plural photodiodes, the visible-region light measuring instrument has second fuses that control connections between the second plural photodiodes and at least one of the first node and the second power supply node. | 03-25-2010 |
20100078559 | Infra-red light stimulated high-flux semiconductor x-ray and gamma-ray radiation detector - A method of detecting radiation through which the residence time of charge carriers is dramatically reduced by an external optical energy source and the occupancy of the deep-level defects is maintained close to the thermal equilibrium of the un-irradiated device even under high-flux exposure conditions. Instead of relying on thermal energy to release the trapped carriers, infra-red light radiation is used to provide sufficient energy for the trapped carriers to escape from defect levels. Cd | 04-01-2010 |
20100084556 | OPTICAL-INFRARED COMPOSITE SENSOR AND METHOD OF FABRICATING THE SAME - Provided are an optical-infrared composite sensor and a method of fabricating the same. The optical-infrared composite sensor can sense both optical and infrared radiation. The optical-infrared composite sensor includes an infrared sensor formed on a substrate, a silicon cap enveloping the infrared sensor to vacuum-package the infrared sensor, and an optical sensor formed at one side of the silicon cap. | 04-08-2010 |
20100090112 | SINGLE TERAHERTZ WAVE TIME-WAVEFORM MEASURING DEVICE - A single terahertz wave time-waveform measuring device | 04-15-2010 |
20100102230 | Light detection circuit for ambient light and proximity sensor - A circuit for implementing an ambient light sensing mode and a proximity sensing mode includes a first light sensor that is more sensitive to light in the infrared spectrum than to light in the visible spectrum and a light source that emits light in the infrared spectrum. The circuit further includes a second light sensor that is sensitive to light in the visible spectrum and a controller coupled to the first light sensor, the light source, and the second light sensor. The controller is configured to process an ambient light level output from the first light sensor without the light source energized with an output from the first light sensor with the light source energized to implement a proximity sensing mode. Further, the controller is configured to process an output from the second light sensor to implement an ambient light sensing mode. | 04-29-2010 |
20100102231 | SEMICONDUCTOR DEVICE - Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor. | 04-29-2010 |
20100116988 | SEMICONDUCTOR FOR SENSING INFRARED RADIATION AND METHOD THEREOF - A semiconductor device for sensing infrared radiation is provided. In an embodiment, the semiconductor device includes a sensor configuration which includes a light receiving portion for converting incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; and a sensing circuit which includes a common mode current providing portion and a current subtraction portion, wherein the common mode current providing portion outputs a common mode current related to a value of a current which is flowing in the sensing portion when there is no incident light and the current subtraction portion outputs subtraction currents for the common mode current and a sensing current related to a current output from the sensing portion. In another embodiment, the sensing configuration includes a heat removing portion which is disposed to form an empty space between the heat removing portion and the light receiving portion and the sensing portion, and removes accumulated heat from the light receiving portion and the sensing portion, and the sensing circuit includes an actuating voltage supplying portion which applies electric potential between the sensing portion and the heat removing portion to make the light receiving portion and the sensing portion elastically deflect into the empty space and consequently contact the heat removing portion to remove the heat. | 05-13-2010 |
20100116989 | INFRARED LIGHT DETECTOR - An infrared light detector with an infrared light sensitivity thereof further improved. According to the infrared light detector, an isolated region of a first electronic layer is switched between a “disconnected status” and a “connected status”. Under the connected status, saturation of an electrostatic charge quantity of the isolated region in the disconnected status is eliminated, and consequently, saturation of a variation amount of an electrical conductivity of a second electronic layer is eliminated. Therefore, the infrared light sensitivity is further improved by time integration of the variation amount of the electrical conductivity of the second electronic layer. | 05-13-2010 |
20100133434 | Organic semiconductor infrared distance sensing apparatus and organic infrared emitting apparatus thereof - An organic semiconductor infrared distance sensing apparatus and an organic infrared emitting apparatus thereof are disclosed. The organic semiconductor infrared distance sensing apparatus comprises an organic infrared emitting apparatus and an organic infrared receiving apparatus. The organic infrared emitting apparatus has a positive electrode layer and a negative electrode layer to form an electric field, and organic light emitting molecules are sandwiched between the two layers and correspond to the positive electrode layer and the negative electrode layer. Under a positive bias, a plurality of electrons and holes are respectively injected from electrodes and recombine with each other to emit photons. An infrared organic conversion layer absorbs and transfers the energy to infrared emitting molecules to emit infrared light. The organic infrared receiving apparatus receives the infrared light reflected by an obstacle to generate photocurrent which varies with distance, thereby sensing the distance between the obstacle and the apparatus. | 06-03-2010 |
20100140475 | DETECTION DEVICE - Reflective means comprising substrates, selectively reflects electromagnetic radiation whose frequency lies between 3×10 | 06-10-2010 |
20100148068 | APPARATUS FOR AUTHENTICATING A PERSON OF AT LEAST ONE BIOMETRIC PARAMETER - The apparatus for authenticating a person on the basis of at least one biometric parameter, particularly on the basis of a fingerprint, comprises a biometric detector ( | 06-17-2010 |
20100155601 | INFRARED SENSOR AND METHOD OF FABRICATING THE SAME - An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented. | 06-24-2010 |
20100155602 | SILICON SURFACE STATE DETECTORS AND DETECTOR ARRAYS - Photodetection devices and methods are described. The photodetection devices comprise semiconductor tapered pillars. | 06-24-2010 |
20100181486 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A micro-bolometer type infrared (IR) sensing device is provided. The IR sensing device includes an absorbed heat discharging part; a sensing structure part formed as bean structure, spaced apart from the absorbed heat discharging part, supported at least at one end on the absorbed heat discharging part, and discharging heat absorbed in the sensing structure part by being elastically deformed and thus touching the absorbed heat discharging part. The sensing structure part includes: a sensing part with variation in secondary attribute (for example, in electrical resistance property) according to heat; and a light-absorbing part formed into one unit with the sensing part in a manner to surround the sensing part as seen in section view, and converting energy of incident photons into heat. The sensing structure part discharges heat absorbed therein by being elastically deformed and thus touching the absorbed heat discharge part spaced apart downward from the sensing structure part. According to an aspect of the present invention, the sensing structure part has a meander structure which is meandered while advancing and returning and showing a shape ‘⊂’ or a shape ‘⊃’ in turns at curved portions, as seen from above, near at least one end where the sensing structure part is supported, wherein the meander structure is based on a serpentine structure which is narrow in width and curved in form. | 07-22-2010 |
20100200755 | APPARATUS AND METHOD FOR DETECTING TERAHERTZ WAVE - A terahertz wave detecting apparatus includes a semiconductor chip | 08-12-2010 |
20100207028 | Laser-Pulse Matrix Detector with Rapid Summation - The invention relates to a light pulse sensor ( | 08-19-2010 |
20100213373 | Infrared sensor structure and method - A radiation sensor ( | 08-26-2010 |
20100213374 | On-chip calibration system and method for infrared sensor - A radiation sensor includes an integrated circuit radiation sensor chip ( | 08-26-2010 |
20100219342 | ANTIBLOOMING IMAGING APPARATUS, SYSTEMS, AND METHODS - Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier arrangement is configured to block the flow of charge carriers generated outside a photosensitive region. In various embodiments, a potential well-potential barrier arrangement is formed to direct charge carriers away from the photosensitive region during an integration time. | 09-02-2010 |
20100230595 | INFRARED SENSOR - To improve thermal insulation, a thermal infrared sensing element is carried on a sensor mount of a porous material and is spaced upwardly from a substrate by means of anchor studs projecting on the substrate. The sensor mount is formed with a pair of coplanar beams carry thereon leads extending from the sensing element. The leads and the beams are secured to the upper ends of the anchor studs to hold the sensing element at a predetermined height above the substrate. The beams and the leads are combined with each other by intermolecular adhesion such that the sensing element as well as the sensor mount can be altogether supported to the anchor studs. | 09-16-2010 |
20100230596 | PHOTOCONDUCTIVE ANTENNA ELEMENT - This invention relates to a photoconductive antenna element having a structure capable of preventing element characteristics from deteriorating and attain a smaller size at the same time. This photoconductive antenna element ( | 09-16-2010 |
20100243897 | High Voltage Supply to Increase Rise Time of Current Through Light Source in an Optical Sensor System - A high voltage supply circuit to drive a light source in an optical sensor system. The high voltage supply provides a high voltage output to the light source during the start of an on time for the light source to decrease current rise time through the light source. After the start of the light source on time, the high voltage output is disconnected from the circuit and a current source provides current output to the light source to drive the light source during the remainder of the light source on time. | 09-30-2010 |
20100252737 | SPECTROMETER FOR FLUID ANALYSIS - A spectrometer includes: a lighting device (LSRC) configured to generate a light beam covering a wavelength band, a probe configured so that the light beam coming from the lighting device interacts with a fluid to be analyzed, and a spectrum analyzing device configured to receive the light beam after it has interacted with the fluid to be analyzed, and to provide light intensity measurements for various ranges of wavelengths. The lighting device includes several light-emitting components ( | 10-07-2010 |
20100258727 | WAVEFORM INFORMATION ACQUISITION APPARATUS AND WAVEFORM INFORMATION ACQUISITION METHOD - Provided are an apparatus and a method which enable acquisition of a temporal waveform of a propagating terahertz wave by changing a propagation velocity of the terahertz wave. A waveform information acquisition apparatus includes a generation portion for generating a terahertz wave, a propagation portion for allowing the terahertz wave generated by the generation portion to propagate therethrough, a detection portion for detecting waveform information of the terahertz wave, a first delay portion for changing a propagation velocity of the terahertz wave, and a control portion for controlling the first delay portion to change the propagation velocity of the terahertz wave in the propagation portion, and acquires information regarding the temporal waveform of the terahertz wave detected by the detection portion. | 10-14-2010 |
20100264312 | SUPERCONDUCTING SOURCE FOR TUNABLE COHERENT TERAHERTZ RADIATION - A system includes a solid state source of THz radiation and a detector. The source of THz radiation may be based on a superconducting material, such as materials containing one or more Josephson junctions (e.g. BSCCO). The source may include a crystal of superconducting material on which a mesa of superconducting material is formed. The resonant coupling between the Josephson oscillations and the fundamental cavity mode of the mesa may lead to synchronization of the Josephson junctions and emission of powerful THz radiation. The mesa may be formed and/or handled such that THz radiation can be emitted by the material without requiring application of an external magnetic field (e.g. the mesa may include a non-uniform compositional gradient, a non-uniform shape, may have radiation non-uniformly applied to the mesa, etc.). | 10-21-2010 |
20100276594 | Photoconductive device - A photoconductive device ( | 11-04-2010 |
20100282968 | Device and method for terahertz imaging with combining terahertz technology and amplitude-division interference technology - This invention provides a device and a method for THz imaging to obtain real 3D image of sample and achieve high resolution, by combining THz technology and amplitude-division interference technology. | 11-11-2010 |
20100288927 | Enhanced Direct Injection Circuit - A charge injection circuit is used to control injection of an electronic charge to be added to a photon-induced charge generated by a detector of a direct integration circuit. The electronic charge can be injected directly to the detector or through a parallel path to the detector. Injection of the electronic charge is controlled through one or more switching transistors | 11-18-2010 |
20100294935 | DETECTION BEYOND THE STANDARD RADIATION NOISE LIMIT USING REDUCED EMISSIVITY AND OPTICAL CAVITY COUPLING - The present invention provides thermal detectors having an optical cavity that is optimized to couple light into a sensor. Light that is on resonance is coupled with the sensor with as high as 100% efficiency, while light off resonance is substantially reflected away. Light that strikes the sensor from the sides (i.e. not on the optical cavity axis) only interacts minimally with sensor because of the reduced absorption characteristics of the sensor. Narrowband sensors in accordance with the present invention can gain as much as 100% of the signal from one direction and spectral band, while receiving only a fraction of the normal radiation noise, which originates from all spectral bands and directions. | 11-25-2010 |
20100294936 | ORGANIC PHOTODETECTOR FOR THE DETECTION OF INFRARED RADIATION, METHOD FOR THE PRODUCTION THEREOF, AND USE THEREOF - An organic photodetector detects infrared radiation, particularly radiation within the spectral region of over 1100 nm, the so-called imager region. Contrary to the currently known photodetectors, such as the Bolometer, II-VI semiconductor, and quantum well detectors, the photodetector contains semiconducting nano-particles for shifting the range of detection, requires no technical and cost-intensive effort in the production thereof, and may be constructed of flexible substrates by simple printing methods. | 11-25-2010 |
20100301216 | METHOD AND SYSTEM FOR DETECTING LIGHT - A light detecting system is disclosed. The system comprises an arrangement of quantum dots forming an optically active region, a channel region and a charge carrier extractor between the active region and the channel region. The charge carrier extractor is characterized by a set of gradually decreasing energy levels between a characteristic excited energy level of the active region and a characteristic conductance energy level of the channel region. | 12-02-2010 |
20100301217 | MINIATURE PHASE-CORRECTED ANTENNAS FOR HIGH RESOLUTION FOCAL PLANE THz IMAGING ARRAYS - An array of backward diodes of a cathode layer adjacent to a first side of a non-uniform doping profile and an Antimonide-based tunnel barrier layer adjacent to a second side of the spacer layer have a monolithically integrated antenna bonded to each backward diode. The Antimonide-based tunnel barrier may be doped with, for example, a non-uniform delta doping profile. An imaging/detection device includes a 2D focal plane array of an array of backward diodes, wherein each backward diode is monolithically bonded to an antenna, which array is located at the back of an extended hemispherical lens, and wherein certain of the arrays are tilted for correcting optics aberrations. The antennas may be a bow-tie antenna, a planar log-periodic antenna, a double-slot with microstrip feed antenna, a spiral antenna, a helical antenna, a ring antenna, a dielectric rod antenna, or a double slot antenna with co-planar waveguide feed antenna. | 12-02-2010 |
20100314544 | DEVICE FOR DETECTION AND/OR EMISSION OF ELECTROMAGNETIC RADIATION AND METHOD FOR FABRICATING SUCH A DEVICE - The device for detection and/or emission of radiation has an encapsulation micropackage in a vacuum or under reduced pressure that comprises a cap and a substrate delineating a sealed housing. The housing encapsulates at least one uncooled thermal detector and/or emitter having a membrane sensitive to electromagnetic radiation suspended above the substrate, a reflector and at least one getter. The getter is arranged on at least a part of a second main surface of the reflector to form a reflector/getter assembly. A free space, releasing an accessible surface of the getter and in communication with the housing, is also formed between the reflector/getter assembly and the front surface of the substrate. | 12-16-2010 |
20100320386 | Adhesive Sensor for Hot Melt and Liquid Adhesives - Apparatus and methods for detecting adhesives. The apparatus includes an adhesive sensor having a photodiode sensitive to infrared radiation at different wavelengths. The adhesive sensor may sense infrared radiation thermally emitted from a sufficiently hot adhesive. Alternatively, the adhesive sensor may sense infrared radiation from first and second near infrared diodes that emit at different wavelengths that are reflected with different intensities from an adhesive that is at a temperature insufficient to emit infrared radiation at an intensity to be readily detectable. A visible light source may be provided for targeting and focusing the adhesive sensor. | 12-23-2010 |
20100320387 | QUANTUM UNCOOLED INFRA-RED PHOTO-DETECTOR - A photo-detector comprising: a p-doped semiconductor layer; an n-doped semiconductor layer juxtaposed with the p-doped semiconductor layer; one of an intrinsic amorphous silicon layer sandwiched between the p-doped semiconductor layer and the n-doped semiconductor layer and a depletion region formed between the p-doped semiconductor layer juxtaposed with the n-doped semiconductor layer; a plurality of mesoscopic sized particles within the one of the intrinsic amorphous silicon layer sandwiched between the p-doped semiconductor layer and the n-doped semiconductor layer and the depletion region formed between the p-doped semiconductor layer juxtaposed with the n-doped semiconductor layer. A source of pumping light is provided and arranged to be received at the mesoscopic sized particles thereby generating free carriers confined in the mesoscopic sized particles. Received light of a target waveband releases the carriers from confinement which is detected as a flow of current. | 12-23-2010 |
20110017910 | PRODUCTION METHOD FOR A SURFACE SENSOR, SYSTEM AND USE OF A SURFACE SENSOR - The invention relates to a surface sensor ( | 01-27-2011 |
20110024627 | Proximity Sensor with Ceramic Housing and Light Barrier - An optical proximity sensor is provided that comprises an infrared light emitter, an infrared light detector, a ceramic housing, a substrate, and a cover or shield. The ceramic housing is mounted on or attached to the substrate, and comprises first and second recesses separated by a light barrier. The cover is mounted over the ceramic housing, the light emitter and the light detector. The infrared light emitter is located within the first recess and mounted on the substrate. The infrared light detector is located within the second recess and mounted on the substrate. The light barrier between the first and second recesses, in conjunction with the remainder of the ceramic housing, the substrate, and the cover or shield substantially attenuates or blocks the transmission of undesired direct, scattered or reflected infrared light between the light emitter and the light detector, and thereby minimizes optical crosstalk and interference between the light emitter and the light detector. | 02-03-2011 |
20110024628 | APPARATUS HAVING A SCREENED STRUCTURE FOR DETECTING THERMAL RADIATION - An apparatus for detecting radiation has a substrate, a protective housing fitting on the substrate, which has an electrically conductive material and a top facing away from the substrate, and that has an aperture therein. A stack is fitted on the substrate inside the protective housing and includes at least one detector substrate having at least one thermal detector element thereon that converts incoming thermal radiation into an electrical signal, at least one circuit carrier having at least one read circuit for reading out the electrical signal, and at least one cover that covers the detector element. The detector substrate is located between the circuit substrate and the cover. The detector substrate and the cover are arranged on each other such that the detector element of the detector substrate and the cover have at least one first stack cavity of the stack therebetween, the stack cavity being defined by the detector support and the cover. The circuit substrate and the detector substrate are arranged on each other such that the detector substrate and the circuit substrate have at least one second stack cavity therebetween, the second stack cavity being defined by the circuit substrate and the detector substrate. At least one of the first stack cavity and the second stack cavity is evacuated. The stack top that faces the substrate is accessible from outside of the protective housing. | 02-03-2011 |
20110031400 | METHOD FOR CREATING AND COHERENTLY DETECTING TERAHERTZ RADIATION - The present invention relates to a device for creating and coherently detecting terahertz radiation, comprising a laser light source ( | 02-10-2011 |
20110031401 | RADIATION DETECTOR HAVING A BANDGAP ENGINEERED ABSORBER - A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber. | 02-10-2011 |
20110036984 | TUNABLE BROADBAND ANTI-RELFECTION APPARATUS - A broadband anti-reflection apparatus for use with terahertz radiation includes a layer having an outer surface comprising a plurality of pyramid structures having about a 30 μm to about a 110 μm period, and wherein reflectance of the terahertz radiation is reduced compared to a layer comprising a planar outer surface. Also disclosed is a method for modifying terahertz radiation which includes receiving terahertz radiation on a device having an anti-reflection layer having an outer surface comprising a plurality of pyramid structures having about a 30 μm to a 110 μm period, and modifying the terahertz radiation passing through the device or processing the terahertz radiation in the device. | 02-17-2011 |
20110049366 | RESISTIVE MATERIAL FOR BOLOMETER, BOLOMETER FOR INFRARED DETECTOR USING THE MATERIAL, AND METHOD OF MANUFACTURING THE BOLOMETER - A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision. | 03-03-2011 |
20110049367 | ORGANIC THIN FILMS FOR INFRARED DETECTION - The present invention provides methods and organic photosensitive materials and devices for detection of infrared radiation. | 03-03-2011 |
20110057108 | Compact Optical Proximity Sensor with Ball Grid Array and Windowed Substrate - Various embodiments of a compact optical proximity sensor with a ball grid array and windowed or apertured substrate are disclosed. In one embodiment, the optical proximity sensor comprises a printed circuit board (“PCB”) substrate comprising an aperture and a lower surface having electrical contacts disposed thereon, an infrared light emitter and an infrared light detector mounted on an upper surface of the substrate, an integrated circuit located at least partially within the aperture, a molding compound being disposed between portions of the integrated circuit and substrate, an ambient light detector mounted on an upper surface of the integrated circuit, first and second molded infrared light pass components disposed over and covering the infrared light emitter and the infrared light detector, respectively, and a molded infrared light cut component disposed between and over portions of the first and second infrared light pass components. | 03-10-2011 |
20110062336 | ELECTROMAGNETIC BASED THERMAL SENSING AND IMAGING INCORPORATING STACKED SEMICONDUCTOR STRUCTURES FOR THz DETECTION - A novel pixel circuit and multi-dimensional array for receiving and detecting black body radiation in the SWIR, MWIR or LWIR frequency bands. An electromagnetic thermal sensor and imaging system is provided based on the treatment of thermal radiation as an electromagnetic wave. The thermal sensor and imager functions essentially as an electromagnetic power sensor/receiver, operating in the SWIR (200-375 THz), MWIR (60-100 THz), or LWIR (21-38 THz) frequency bands. The thermal pixel circuit of the invention is used to construct thermal imaging arrays, such as 1D, 2D and stereoscopic arrays. Various pixel circuit embodiments are provided including balanced and unbalanced, biased and unbiased and current and voltage sensing topologies. The pixel circuit and corresponding imaging arrays are constructed on a monolithic semiconductor substrate using in a stacked topology. A metal-insulator-metal (MIM) structure provides rectification of the received signal at high terahertz frequencies. | 03-17-2011 |
20110068271 | EMISSIVITY ENHANCED MID IR SOURCE - An infrared (IR) source apparatus that includes a desired infrared source element coupled to an insulating housing so to minimize overall source inefficiency at desired optical bandwidths is introduced. The insulation itself is machined or configured in a way so that the infrared source element is in contact with a designed cavity in the insulation so that the IR source image becomes the average of the insulation material and the infrared element. Such an arrangement of the present invention increases the emissivity of the IR source below about 1500 wave numbers, more often, below about 1100 wave numbers, and even more particularly, at about 1079 wave numbers. Accordingly, the combined emissivity of the infrared source and the insulation substantially enhances spectral emission and eliminates or reduces spectral artifacts from the formation of oxides on the infrared source surfaces. | 03-24-2011 |
20110068272 | DEVICE AND METHOD FOR DETECTING INFRARED RADIATION THROUGH A RESISTIVE BOLOMETER MATRIX - An infrared radiation detection device comprising: a substrate; a matrix of at least one line of elements for detecting said radiation, each comprising a resistive imaging bolometer, said matrix being formed above the substrate; means for reading the bolometers of the matrix, means for measuring the temperature in at least one point of the substrate; and means for correcting the signal formed from each bolometer as a function of the temperature measured in at least one point of the substrate. The correcting means are capable of correcting the signal formed from the imaging bolometer by means of a predetermined physical model of the temperature behaviour of said signal. | 03-24-2011 |
20110073762 | LIGHT DETECTOR, LIGHT DETECTING APPARATUS, INFRARED DETECTOR AND INFRARED DETECTING APPARATUS - An infrared detector which converts entering infrared IR into light in a different wavelength band, and which detects the converted light in the different wavelength band includes: a convex-concave structure provided on a light acceptance surface of the infrared detector; and a metal film provided on an outer circumferential face of the light detector other than the light acceptance surface thereof, the metal film covering the outer circumferential face. In the infrared detector, light which enters the light detector after passing through the convex-concave structure and the converted light in the different wavelength band are confined inside the light detector: by causing the entering light to be reflected on the metal film; by causing light reflected on the metal film to be reflected on the convex-concave structure; and by causing the converted light in the different wavelength band to be reflected between the metal film and the convex-concave structure. | 03-31-2011 |
20110079717 | INFRARED POSITIONING APPARATUS AND SYSTEM THEREOF - An infrared positioning apparatus comprises a plurality of infrared diodes, a plurality of amplifying units, a plurality of converting units and a positioning unit. The plurality of infrared diodes is configured to detect at least one infrared signal. The plurality of amplifying units are configured to amplify the at least one infrared signal for obtaining at least one amplified signal. The plurality of converting units are configured to convert the at least one amplified signal for obtaining at least one strength value of the at least one amplified signal. The positioning unit is configured to obtain the emitting direction of the at least one infrared signal in accordance with the at least one strength value of the at least one amplified signal. | 04-07-2011 |
20110095188 | BACKSIDE ILLUMINATED IMAGING SENSOR WITH IMPROVED INFRARED SENSITIVITY - A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer. | 04-28-2011 |
20110108728 | AMBIT LIGHT SENSOR WITH FUNCTION OF IR SENSING - An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure. | 05-12-2011 |
20110108729 | THz WAVE DETECTOR - A THz wave detector including a thermal isolation structure in which a supporting unit containing electrode wirings connected to a readout circuit formed in an substrate supports a temperature detecting unit connected to the electrode wirings so that one face of said temperature detecting unit and said substrate are opposed to each other with a predetermined gap, wherein a reflective film reflecting THz waves is formed on the substrate so as to face the temperature detecting unit, an absorbing film absorbing the THz waves is formed on the temperature detecting unit, the reflective film and the temperature detecting unit form an optical resonant structure, the distance between the reflective film and the temperature detecting unit is set to 8 to 14 μm, and the sheet resistance of the absorbing film is set to 100 to 200 Ω/square. | 05-12-2011 |
20110114841 | POWER CONTROL CIRCUIT OF A VARIABLE-FREQUENCY OPTO-INTERRUPTER FOR A PRINTER - A power control circuit of a variable-frequency opto-interrupter for a printer has a plurality of impedances electrically connected with a receiving terminal of the opto-interrupter in parallel for multi-stage variable adjustment, an IR photodiode having stronger penetration and adopted to a transmitting terminal, and a variable frequency generator generating variable frequency signal and electrically connected with a negative pole pin of the IR photodiode through a switching transistor. Accordingly, the emitting intensity of the opto-interrupter is significantly enhanced so that various printing media are penetrated through by infrared beams and the emitting intensity is adjusted to adapt to acquire a broader dynamic range of the load of the receiving terminal. | 05-19-2011 |
20110127431 | PHOTOCONDUCTOR DEVICE HAVING POLYCRYSTALLINE GaAs THIN FILM AND METHOD OF MANUFACTURING THE SAME - A photoconductor device and a method of manufacturing the same are provided. The photoconductor device includes a photoconductor substrate, a photoconductor thin film deposited on the photoconductor substrate, and a photoconductive antenna electrode formed on the photoconductor thin film. The photoconductor thin film includes polycrystalline GaAs. | 06-02-2011 |
20110133087 | SCANNING METHOD AND APPARATUS - In a terahertz imaging system, a scanning component for scanning a field of view is tracked by an optical beam to obtain positional information. The optical tracking beam can be steered by the scanning component for example by reflection, refraction or diffraction. The steered tracking beam can then be detected by a spatially sensitive detector such as a charge-coupled device array. In a preferred embodiment, the output of a terahertz detector receiving terahertz radiation from the scanned field of view is used to modulate the tracking beam. This means that the spatially sensitive detector can provide an image directly derived from the scanning of the field of view by the terahertz radiation. | 06-09-2011 |
20110133088 | METHOD AND SYSTEM FOR DETECTING LIGHT AND DESIGNING A LIGHT DETECTOR - A light detection system which comprises an active region between a back contact layer and a front contact layer is disclosed. The active region comprises a quantum well structure having a quantum well between quantum barriers, wherein the quantum well comprises foreign atoms that induce an excited bound state at an energy level which is above an energy level characterizing the quantum barriers. | 06-09-2011 |
20110155914 | INFRARED SENSOR AND INFRARED SENSOR MODULE - The present invention provides an infrared sensor and an infrared sensor module having reduced noise, improved detection precision, and reduced manufacture cost. The infrared sensor includes a first substrate transmitting infrared light including at least one reduced-pressure and sealed cavity, at least one infrared sensing unit provided on the side of the first substrate, and at least one infrared sensing unit generating an output change. The infrared sensor includes a second substrate stacked on the first substrate with a recess, a reflection face capable of reflecting the infrared light, and at least one arithmetic circuit for amplifying or integrating an output, arranged in such a manner that the reflection face is sandwiched between the at least one sensing unit and the least one arithmetic circuit. | 06-30-2011 |
20110163233 | Optical Proximity Sensor with Improved Dynamic Range and Sensitivity - Various embodiments of an optical proximity sensor and corresponding circuits and methods for measuring small AC signal currents arising from the detection of pulsed AC light signals emitted by a light emitter and reflected from an object to detected in the presence of larger ambient light DC current signals are disclosed. Circuits and corresponding methods are described that improve the dynamic range, sensitivity and detection range of an optical proximity sensor by cancelling the contributions of DC current signals arising from ambient light signals that otherwise would dominate the detected small AC signal currents. The DC signal cancellation occurs in a differential amplifier circuit before small AC signal currents are provided to an analog-to-digital converter The circuits and methods may be implemented using conventional CMOS design and manufacturing techniques and processes. | 07-07-2011 |
20110168894 | NANOWIRE BOLOMETER PHOTODETECTOR - A photodetector for the detection of radiated electromagnetic energy includes at least one bolometer nanowire disposed at least partially within a photon trap. The at least one nanowire has at least one blackened surface. The blackened surface is configured to absorb radiated electromagnetic energy ranging from far-infrared light to visible light. | 07-14-2011 |
20110168895 | FOOD QUALITY EXAMINATION DEVICE, FOOD COMPONENT EXAMINATION DEVICE, FOREIGN MATTER COMPONENT EXAMINATION DEVICE, TASTE EXAMINATION DEVICE, AND CHANGED STATE EXAMINATION DEVICE - There is provided, for example, a food quality examination device configured to inspect the quality of food with high sensitivity using an InP-based photodiode in which a dark current is decreased without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer has a multiquantum well structure composed of a III-V group semiconductor. A pn junction is formed by selectively diffusing an impurity element into the absorption layer. The concentration of the impurity in the absorption layer is 5×10 | 07-14-2011 |
20110180710 | SERIES DIODE ELECTRO-THERMAL CIRCUIT FOR ULTRA SENSITIVE SILICON SENSOR - Electro-thermal feedback is utilized for reducing the effective thermal conductance between the detector stage of a bolometer pixel in a thermal radiation sensor assembly and the environment through its mechanical support structure and electrical interconnects, thereby coming closer to achieving thermal conductance limited primarily through photon radiation. Minimization of the effective thermal conductance associated with the mechanical support structure and electrical interconnects is achieved by electro-thermal feedback that adjusts the temperature of an intermediate stage and the mechanical support structure and electrical interconnects, connecting it to the detector stage, to equal the temperature of the bolometer pixel's detector stage (i.e., by active thermal isolation). Increased temperature sensitivity is preferably achieved through temperature sensing with reverse biased Schottky diodes connected in series. | 07-28-2011 |
20110180711 | THERMAL DETECTOR, THERMAL DETECTION DEVICE AND ELECTRONIC INSTRUMENT, AND METHOD FOR MANUFACTURING THERMAL DETECTOR - A thermal detector includes a substrate, a thermal detection element and a support member. The substrate has a concave portion, a bottom surface of the concave portion forming a light-reflecting curved surface. The thermal detection element includes a light-absorbing film. The support member supports the thermal detection element with a cavity being provided between the substrate and the support member. The light-reflecting curved surface and the light-absorbing film overlap each other in plan view, the light-reflecting curved surface having a projected area in plan view larger than an area of the light-absorbing film. | 07-28-2011 |
20110180712 | METHOD FOR MANUFACTURING MEMS DEVICE, METHOD FOR MANUFACTURING THERMAL DETECTOR, THERMAL DETECTOR, THERMAL DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A method for manufacturing a MEMS device having an undercut shape formed on a fixed part includes a first step of forming an etching layer having a first cavity on the fixed part; a second step of forming a mask layer on a side wall of the etching layer, the side wall facing the first cavity; and a third step of directing an etchant fed into the first cavity on a surface side of the mask layer to a back surface side of the mask layer, isotropically etching the etching layer, forming a second cavity communicated with the first cavity on the back surface side of the mask layer, and processing the etching layer into an undercut shape. | 07-28-2011 |
20110180713 | THERMAL DETECTOR, THERMAL DETECTOR DEVICE, ELECTRONIC INSTRUMENT, AND METHOD OF MANUFACTURING THERMAL DETECTOR - The thermal detector includes a support member supported on a substrate. The support member has a mounting portion supporting a thermal detector element, and at least one arm portion connected at one end to the mounting portion and connected at the other end to the substrate. At least one of the mounting portion and the at least one arm portion has a first member disposed towards the substrate, a transverse width of a transverse cross-sectional shape of the first member set to a first width; a second member disposed toward the thermal detector element and facing the first member, a transverse width of the second member set to the first width; and a third member linking the first member and the second member, a transverse width of the third member set to a second width that is smaller than the first width. | 07-28-2011 |
20110186736 | Optical Proximity Sensor Package with Lead Frame - Various embodiments of an optical proximity sensor having a lead frame and no overlying metal shield are disclosed. In one embodiment, a light emitter and a light detector are mounted on a lead frame comprising a plurality of discrete electrically conductive elements having upper and lower surfaces, at least some of the elements not being electrically connected to one another. An integrated circuit is die-attached to an underside of the lead frame. An optically-transmissive infrared pass compound is molded over the light detector and the light emitter and portions of the lead frame. Next, an optically non-transmissive infrared cut compound is molded over the optically-transmissive infrared pass compound to provide an optical proximity sensor having no metal shield but exhibiting very low crosstalk characteristics. | 08-04-2011 |
20110186737 | METHOD AND DEVICE FOR CONTROLLING THE RESISTANCE OF THE SENSITIVE MEMBER OF A BOLOMETRIC SENSOR - The invention relates to a method for controlling the resistance of a bolometer in a bolometer matrix of a sensor, said sensor comprising a circuit for reading said matrix which is capable of addressing said bolometer. | 08-04-2011 |
20110204233 | Infrared Attenuating or Blocking Layer in Optical Proximity Sensor - An optical proximity sensor is provided that comprises an infrared light emitter an infrared light detector, a first molded optically transmissive infrared light pass component disposed over and covering the light emitter and a second molded optically transmissive infrared light pass component disposed over and covering the light detector. Located in-between the light emitter and the first molded optically transmissive infrared light pass component, and the light detector and the second molded optically transmissive infrared light pass component is a gap. Layers of infrared opaque, attenuating or blocking material are disposed on at least some of the external surfaces forming the gap to substantially attenuate or block the transmission of undesired direct, scattered or reflected light between the light emitter and the light detector, and thereby minimize optical crosstalk and interference between the light emitter and the light detector. | 08-25-2011 |
20110215245 | OPTICAL ELEMENT, AND OPTICAL DEVICE AND TERAHERTZ TIME-DOMAIN SPECTROSCOPIC APPARATUS INCLUDING THE SAME - An optical element includes a semiconductor layer having an energy band gap larger than a photon energy of light, and a plurality of electrodes in electrical contact with the semiconductor layer. At least one of the electrodes forms a Schottky junction between the electrode and the semiconductor layer; the Schottky junction has a barrier height smaller than the photon energy of the light. At least part of a junction surface between the electrode that forms the Schottky junction and the semiconductor layer includes a light irradiation surface arranged to be irradiated with the light from a surface of the semiconductor layer without the electrodes, and a portion of a coupling structure arranged to be coupled to a terahertz wave that is generated or detected through the irradiation with the light. | 09-08-2011 |
20110215246 | PHOTOCONDUCTIVE ELEMENT - A photoconductive element for performing at least one of generation and detection of terahertz radiation includes a photoconductive layer formed of a semiconductor material and configured to generate photoexcited carriers by being irradiated with excitation light, and a plurality of electrodes provided on the photoconductive layer. The material of the photoconductive layer is a material that makes a depletion layer produced in the photoconductive layer have a thickness smaller than an optical absorption length of the photoconductive layer for a wavelength of the excitation light. A film thickness of the photoconductive layer is adjusted so that the depletion layer is formed over an entirety in a direction of the film thickness within at least a portion of the photoconductive layer between the plurality of electrodes. | 09-08-2011 |
20110233409 | QUANTUM CASCADE LASER THAT GENERATES WIDELY VIEWABLE MID-INFRARED LIGHT - A laser source assembly ( | 09-29-2011 |
20110240859 | ALTERNATIVE PIXEL SHAPE FOR UNCOOLED MICRO-BOLOMETER - An infrared imaging system including a substrate, a plurality of hexagonal shaped micro-bolometer pixels combined to define a focal plane array. Each pixel is electrically connected to the substrate with a pair of opposing isolation legs. One end of the isolation leg is attached to the pixel's periphery while the other is fixed to that substrate so that the focal plane array and a plane containing the substrate have a parallel, spaced-apart relationship. In this manner, the isolation legs provides an electrical communication path from each pixel to the substrate as each pixel undergoes an internal change in resistance due to absorption of infrared energy. At the same time, the legs separate the pixels from the substrate so that there is no heat transfer between the pixel and the substrate due to direct contact. The hexagonal shape arrangement also allows for a staggered arrangement of adjacent rows in the array, thereby increasing the fill factor for the focal plane array of the device. The addition of stepped areas to the hexagonal pixel provides for improved energy absorption through increase in area and multiple coupling of resonant cavities between the pixel and the substrate. | 10-06-2011 |
20110240860 | DETECTION BEYOND THE STANDARD RADIATION NOISE LIMIT USING SPECTRALLY SELECTIVE ABSORPTION - High sensitivity thermal detectors that perform beyond the blackbody radiation noise limit are described. Thermal detectors, as described herein, use spectrally selective materials that absorb strongly in the wavelength region of the desired signal but only weakly or not at all in the primary thermal emission band. Exemplary devices that can be made in accordance with the present invention include microbolometers containing semiconductors that absorb in the MWIR and/or THz range but not the LWIR. | 10-06-2011 |
20110266443 | Pixel-level optical elements for uncooled infrared detector devices - Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects. | 11-03-2011 |
20110266444 | Pixel structure for microbolometer detector - Microbolometer pixel structures including membrane material in a current path between at least two spaced electrodes, the membrane material having multiple openings defined in the current path that are configured such that substantially the entire volume of electrically conductive membrane material in at least a portion of the current path contributes to conduction of current between the electrical contacts. | 11-03-2011 |
20110266445 | Optically transitioning thermal detector structures - A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature. | 11-03-2011 |
20110266446 | LIGHT DETECTION CIRCUIT FOR AMBIENT LIGHT AND PROXIMITY SENSOR - A circuit for implementing an ambient light sensing mode and a proximity sensing mode includes a light sensor, a light source, and a controller coupled to the light sensor and the light source. The controller is configured to process outputs from the light sensor before and after the light source is energized to obtain an ambient light level output and to compare the ambient light level output with an output from the light sensor when the light source is energized to implement the proximity sensing mode. | 11-03-2011 |
20110297831 | Small Low-Profile Optical Proximity Sensor - In an embodiment, the invention provides a proximity sensor including a transmitter die, a receiver die, an ASIC die, a lead frame, wire bonds, a first transparent encapsulant, a second transparent encapsulant, and an opaque encapsulant. The transmitter die, the receiver die and the ASIC die are attached to portions of the lead frame. Wire bonds electrically connect the transmitter die, the receiver die, the ASIC die, and the lead frame. The first transparent encapsulant covers the receiver die, the ASIC die, the wire bonds, and a portion of the lead frame. The second transparent encapsulant covers the transmitter die, the wire bonds, and a portion of the lead frame. The opaque encapsulant covers portions of the first and second encapsulants and a portion of the lead frame. | 12-08-2011 |
20110303847 | BOLOMETER TYPE TERAHERTZ WAVE DETECTOR - A bolometer type Terahertz wave detector comprises: a temperature detecting portion having a thin bolometer film formed on a substrate, a reflective film that reflects Terahertz waves formed on the substrate at a position facing the temperature detecting portion, and an absorption film formed on the top surface of part of an eave-like member that extends to the inside from the perimeter edge section of the temperature detecting portion and that absorbs Terahertz waves. The reflective film and the absorption film form an optical resonant structure. A thermal isolation structure is formed by a support portion that supports the temperature detecting portion such that it is separated from the substrate by a gap. The eave-like member is supported by the support portion so that it is separated from the substrate by a gap. | 12-15-2011 |
20110315879 | IR DETECTOR SYSTEM AND METHOD - An Infra Red detector system and method are disclosed for a SAR ADC capable of operation at low power and for use on a Focal Plane Array FPA) detector. High power consumption makes known converter approaches unattractive for use on Focal Plane Array (FPA) detectors that are to be cooled to cryogenic temperatures. Many such ADCs are used on a FPA detector (e.g., up to one ADC per column of the imaging array) to digitise image data for the whole array at standard frame rates. Increased power makes cooling difficult to achieve or unattractive at system level. An exemplary system as disclosed can use an adaptive approach to set the comparator gain and settling time depending on the dynamics of the input signal, thereby achieving specified performance whilst reducing overall power. | 12-29-2011 |
20120061570 | INFRARED LIGHT TRANSMISSIVITY FOR A MEMBRANE SENSOR - In conventional membrane infrared (IR) sensors, little to no attention has been paid toward transmissivity of IR near metal traces. Here, because the substrate of an integrated circuit carrying the sensor is used as a visible light filter, reflection of IR radiation back into the substrate can affect the operation and reliability of the IR sensor. As a result, an arrangement is provided that reduces the area occupied by metal lines by reducing the pitch and compacting the routing so as to reduce the effects from the reflection of IR radiation by metal traces. | 03-15-2012 |
20120061571 | LASER NAVIGATION MODULE - Disclosed herein is a laser navigation module. The laser navigation module includes a light source emitting laser light. An IR window allows the laser light emitted by the light source to pass therethrough and be reflected thereon, and prevents the entry of visible light. A housing is equipped with the IR window and includes a transparent or semi-transparent part. An illuminator is provided in the housing to emit light to the outside of the housing. The laser navigation module further includes an opaque part or a blocking layer for selective blocking, thus enabling light to be emitted to a desired area of the housing, therefore making it convenient to use even in a dark place. | 03-15-2012 |
20120061572 | SEMICONDUCTOR FOR SENSING INFRARED RADIATION AND METHOD THEREOF - The bolometric sensing circuit includes a pixel array comprising pixels, each pixel comprising a sensor configuration to comprise a light receiving portion to convert incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; an output portion to output a common mode voltage that represents a voltage of the sensing portion from which accumulated heat has been removed in response to a heat removing voltage to thermally reset the sensing portion, and output a sensed voltage that represents a voltage of the sensing portion which has accumulated heat for an integration period after being thermally reset; and a processor to subtract the common mode voltage from the sensed voltage to produce a signal voltage that represents a change in resistance of the sensing portion due to the heat accumulated for the integration period. | 03-15-2012 |
20120074322 | Double Layer Photodiodes in Ambient Light Sensors and Proximity Detectors - Embodiments of the present invention provide systems, devices and methods for detecting both ambient light and proximity to an object. This detection is performed by a double-layered photodiode array and corresponding circuitry such that ambient light and proximity detection are enabled by a plurality of integrated photodiodes. In various embodiments of the invention, ambient light is sensed using a first set of photodiodes and a second set of photodiodes such that a spectral response is created that is approximately equal to the visible light spectrum. Proximity detection is realized using an integrated photodiode, positioned below the first and second sets of photodiodes, that detects infrared light and generates a response thereto. | 03-29-2012 |
20120074323 | THZ FREQUENCY RANGE ANTENNA - A THz frequency range antenna is provided which comprises: a semiconductor film ( | 03-29-2012 |
20120091342 | MONOLITHIC PASSIVE THz DETECTOR WITH ENERGY CONCENTRATION ON SUB-PIXEL SUSPENDED MEMS THREMAL SENSOR - A THz radiation detector comprising a plurality of antenna arms separated from a suspended platform by an isolating thermal air gap. The detector functions to concentrate THz radiation energy into the smaller suspended MEMS platform (e.g., membrane) upon which a thermal sensor element is located. The THz photon energy is converted into electrical energy by means of a pixilated antenna using capacitive coupling in order to couple this focused energy across the thermally isolated air gap and onto the suspended membrane on which the thermal sensor is located. | 04-19-2012 |
20120091343 | DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION WITH POLARIZED BOLOMETRIC DETECTOR, AND APPLICATION FOR INFRARED DETECTION - A device for detecting electromagnetic radiation, including pixels each detecting a radiation and providing an electric current representative of the detected radiation, a column to which the pixels are connected, and transmitting the electric currents provided by the pixels, and an electrical module, to which the transmission column is connected, processing the electric currents provided by the pixels. Each pixel includes a detection circuit including a bolometric detector connected in series to a voltage polarization device of the bolometric detector for adjusting the electric current supplied to the processing module by the transmission column. A current polarization circuit of the bolometric detector adjusts the electric current supplied to the electrical processing module by the transmission column, the current polarization circuit being different from the detection circuit and being connected to the bolometric detector at one point in the detection circuit located between the bolometric detector and the voltage polarization device. | 04-19-2012 |
20120119089 | Optical System, Method and Computer Program for Detecting the Presence of a Living Biological Organism - The system is comprised of at least one pair of light sources ( | 05-17-2012 |
20120126121 | Processing Detector Array Signals Using Stacked Readout Integrated Circuits - According to certain embodiments, an apparatus comprises a first readout integrated circuit (ROIC), a second ROIC, and a dual band detector array. The first ROIC comprises first unit cells. The second ROIC is disposed outwardly from the first ROIC and comprises a second unit cells. Electrically conductive vias are disposed through the second ROIC and at least into the first ROIC. The detector array is disposed outwardly from the second ROIC. The detector array is configured to detect high dynamic range infrared light and comprises detector pixels. Each detector pixel is configured to generate a current in response to detecting light and send the current to a via. A via is configured to send the signal to a second unit cell and a first unit cell. | 05-24-2012 |
20120126122 | HIGH REPETITION RATE PHOTOCONDUCTIVE TERAHERTZ EMITTER USING A RADIO FREQUENCY BIAS - A terahertz generation system that emits pulsed THz radiation and incorporates a rapidly oscillating, high voltage bias across electrodes insulated from a photoconductive material. The system includes an ultrafast optical pulse source configured to generate an optical pulse having a duration between about ten picoseconds and ten femtoseconds, the pulse further having a repetition rate of about one megahertz or higher. The system further includes a photoconductor configured to receive the optical pulse from the ultrafast optical pulse source and to generate a terahertz frequency pulse, the photoconductor having insulated electrodes. The system still further includes a radio frequency generator configured to apply an electric field to the photoconductor via the insulated electrodes. | 05-24-2012 |
20120138800 | ON-CHIP CALIBRATION SYSTEM AND METHOD FOR INFRARED SENSOR - A radiation sensor includes an integrated circuit radiation sensor chip ( | 06-07-2012 |
20120145906 | Portable system for detecting explosives and a method of use thereof - A portable device for detecting explosives and other target materials using SWIR spectroscopic imaging, including hyperspectral imaging. The device may comprise a lens, a tunable filter, and a detector. The device may use solar radiation, or may comprise an illumination source such as a laser, to illuminate at target material and thereby produce interacted photons. The device may utilize multi-conjugate liquid crystal filter technology to filter interacted photons. The disclosure also provides for a method for using the portable device comprising illuminating a target material to produce interacted photons. The interacted photons are used to form a SWIR spectroscopic image, which may be a hyperspectral image. This image is analyzed to thereby identify the target material. This analysis may comprise comparing at least one spectrum or image representative of the target material to a reference spectrum or image. This comparison may be accomplished using a chemometric technique. | 06-14-2012 |
20120153154 | Optical Module for Simultaneously Focusing on Two Fields of View - The invention relates to an optical module, comprising a semiconductor element having a surface that is sensitive to electromagnetic radiation and an objective for projecting electromagnetic radiation onto the sensitive surface of the semiconductor element (image sensor or camera chip, in particular CCD or CMOS). The objective preferably comprises at least one lens and one lens retainer. | 06-21-2012 |
20120181430 | INFRARED SENSOR AND INFRARED ARRAY SENSOR - An infrared sensor includes a MOSFET sensor, and a current source MOSFET which is connected to the MOSFET sensor in series and constitutes a constant current source for driving the MOSFET sensor with a constant current, wherein a terminal between the MOSFET sensor and the current source MOSFET constitutes a sensor output terminal, the MOSFET sensor is disposed on a heat-insulated structure, the current source MOSFET is disposed outside the heat-insulated structure, and the MOSFET sensor and the current source MOSFET are constituted by a same conductivity type MOSFET and operate in a subthreshold region. | 07-19-2012 |
20120181431 | Portable Terahertz Receiver for Advanced Chemical Sensing - The present invention is directed to a system and method for advanced chemical sensing utilizing a Terahertz receiver instrument having a compact tunable heterodyne mixer to detect chemical species in a noisy background of pollutants, and provide fast acquisition and analysis of the 0.1-2 THz spectrum. The present invention directly couples a microbolometer with a THz quantum cascade laser (QCL) that is utilized as the local oscillator (LO) source for the receiver. | 07-19-2012 |
20120205541 | PLASMONIC DETECTORS - A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth. | 08-16-2012 |
20120228505 | OPTICAL SENSOR - An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line. | 09-13-2012 |
20120228506 | SOLID STATE IMAGING DEVICE - According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted. | 09-13-2012 |
20120235040 | PHOTOCONDUCTIVE ELEMENT - Provided is a photoconductive element which solves a problem inherent in an element for generating/detecting a terahertz wave by photoexcitation that terahertz wave generation efficiency is limited by distortions and defects of a low temperature grown semiconductor. The photoconductive element includes: a semiconductor substrate; a semiconductor low temperature growth layer; and a semiconductor layer, which is positioned between the semiconductor low temperature growth layer and the semiconductor substrate and is thinner than the semiconductor low temperature growth layer, in which the semiconductor low temperature growth layer includes a semiconductor which lattice-matches with the semiconductor layer and does not lattice-match with the semiconductor substrate. | 09-20-2012 |
20120261577 | Light Mixer for Generating Terahertz Radiation - The invention relates to a light mixer for generating terahertz radiation, comprising a photodetector (PHD) coupled to an antenna (AT) for terahertz radiation, characterized in that the photodetector comprises a layer of photoconductive material capable of absorbing optical radiation, said layer having a thickness that is less than the absorption length of said radiation by the photoconductive material and being contained between an at least partially transparent so-called upper electrode and a reflective so-called lower electrode, said lower and upper electrodes comprising a resonant cavity for said optical radiation. The invention further relates to a terahertz radiation source comprising such a light mixer and to two laser radiation sources arranged to stack two laser radiation beams on the upper electrode of the photodetector. The invention also relates to the use of such a light mixer for generating terahertz radiation via light mixing. | 10-18-2012 |
20120267531 | ELECTRONIC DEVICE FOR BASELINING THE CURRENT EMITTED BY ELECTROMAGNETIC RADIATION DETECTORS - A microelectronic device for electromagnetic radiation measurement including a bolometer and an integrator including an integration capacitor, to output, during an integration time, a first signal with variable amplitude and frequency according to the current emitted by the detector, in a form of a series of pulses, and a controller controlling the first signal, to deliver a second signal. The controller includes: a counting device to count each pulse of the first signal detected during an integration time and to indicate an end of counting when a predetermined number N of pulses is reached, and when the end-of-integration time is reached and a predetermined number N of pulses has been counted or deducted by the counter, to emit a second amplitude signal, depending on or equal to the amplitude of the first signal. | 10-25-2012 |
20120280129 | DUAL FUNCTION INJECTION TYPE ARRAY READOUT DEVICE AND CIRCUIT AND DUAL FUNCTION READOUT MODULE - A dual function injection type array readout device includes at least two sensor groups and a dual function injection type array readout circuit. Each sensor group has two sensors of different functions, and each sensor generates a sense current according to a corresponding sensed target. The dual function injection type array readout circuit includes at least two dual function readout modules, each having two readout units, each electrically coupled to a respective sensor of a corresponding sensor group. Each readout unit includes a current-to-voltage converter having an integration capacitor, and a sample-and-hold device electrically coupled to the current-to-voltage converter. A switch unit is electrically coupled to the integration capacitors of the readout units. | 11-08-2012 |
20120286162 | Semiconductor Device and Electronic Apparatus Employing the Same - Disclosed is a semiconductor device, comprising a driver that causes first through third infrared LEDs to emit light sequentially at prescribed times; an infrared light sensor that receives infrared light that is emitted by the first through the third infrared LEDs and reflected by a reflecting object, and generates photoelectric currents at levels corresponding to the intensity of the received infrared light; an amplifier that generates first through third infrared light information, on the basis of the photoelectric current that is generated by the infrared light sensor, and which denote the intensity of the infrared light; an A/D converter; and a linear/logarithmic converter apparatus. It is thus possible to sense the movement of the reflecting object on the basis of the first through the third infrared light information. | 11-15-2012 |
20120292512 | WAVEGUIDE, APPARATUS INCLUDING THE WAVEGUIDE, AND METHOD OF MANUFACTURING THE WAVEGUIDE - Provided are a waveguide with which strain and defect caused by a manufacturing process or the like or caused in a semiconductor in an initial stage or during operation are suppressed so that improvement and stabilization of characteristics are expected, and a method of manufacturing the waveguide. A waveguide includes a first conductor layer and a second conductor layer that are composed of a negative dielectric constant medium having a negative real part of dielectric constant with respect to an electromagnetic wave in a waveguide mode, and a core layer that is in contact with and placed between the first conductor layer and the second conductor layer, and includes a semiconductor portion. The core layer including the semiconductor portion has a particular depressed and projected structure extending in an in-plane direction. | 11-22-2012 |
20120292513 | DIODE SENSOR MATRIX AND METHOD OF READING OUT A DIODE SENSOR MATRIX - A diode sensor matrix including a multitude of diodes is configured to detect, in a first measuring cycle, a first sensor value at a first diode or at diodes of a first group of diodes while operating the first diode and/or the diodes of the first group in the flow direction and operating the diodes, which share an anode or cathode or terminal with the first diode or with any of the diodes of the first group, in the reverse direction, and to detect, in a second measuring cycle, a second sensor value at a second diode among the diodes which share an anode or cathode terminal with the first diode or with any of the diodes of the first group, while operating the second diode in the flow direction and operating the first diode or a diode from the first group in the reverse direction. | 11-22-2012 |
20120305771 | Proximity Sensor Packaging Structure And Manufacturing Method Thereof - The present invention pertains to a proximity sensor packaging structure, which comprises a substrate, two first electrically conductive layers and a plurality of second electrically conductive layers that are disposed on the substrate. The substrate has first and second grooves that are respectively defined by a bottom surface and an interior sidewall. Each electrically conductive layer extends from a bottom surface of the first groove, along the interior sidewall of the first groove and in an opposite direction relative to the other first electrically conductive layer, to an exterior sidewall of the substrate. The second electrically conductive layers include first and second electrically conductive portions. The first electrically conductive portion is disposed on a central region of the bottom surface of the second groove. The second electrically conductive portion extends from the bottom surface of the second groove, along the interior sidewall thereof, to the exterior sidewall of the substrate. | 12-06-2012 |
20120305772 | DEVICE FOR ANALYZING A SAMPLE USING RADIATION IN THE TERAHERTZ FREQUENCY RANGE - A device for analyzing a sample using radiation in the terahertz frequency range is provided. The device comprises a transmitter ( | 12-06-2012 |
20120312989 | SHIELDING OF AN IR DETECTOR - In an electrical device controlled by infrared signals from a remote control, a power saving device has an infrared detection module and a processor. The infrared detection module includes an infrared sensor configured to monitor the output of the remote control device, and a shield which is at least substantially impervious to infrared radiation, and which at least partially shields the infrared sensor from infrared radiation which does not emanate from the remote control device. The processor is coupled to the infrared detection module, and supplies power to the electrical device at least substantially only when the electrical device is in active use by a nearby user, and based at least in part upon input from the infrared sensor. | 12-13-2012 |
20120312990 | METHOD AND DEVICE FOR OPTOELECTRONIC SENSORS WITH IR BLOCKING FILTER - Semiconductor structures for optoelectronic sensors with an infrared (IR) blocking filter and methods for using such sensors with post-detection compensation for IR content that passes through the IR blocking filter are provided herein. | 12-13-2012 |
20120326039 | TERAHERTZ FREQUENCY DOMAIN SPECTROMETER WITH PHASE MODULATION OF SOURCE LASER BEAM - An apparatus for analyzing, identifying or imaging an target including first and second laser beams coupled to a pair of photoconductive switches to produce CW signals in one or more bands in a range of frequencies greater than 100 GHz focused on, and transmitted through or reflected from the target; and a detector for acquiring spectral information from signals received from the target and using a multi-spectral heterodyne process to generate an electrical signal representative of some characteristics of the target. The lasers are tuned to different frequencies and a phase modulator in the path of one laser beam allows the constructive or destructive interference of the signals on the detector as the laser beams are swept in frequency to be adjusted to achieve greater resolution in one or more selected frequency bands. | 12-27-2012 |
20130009061 | PROCESSING METHOD AND APPARATUS FOR ENERGY SAVING OF AN ACTIVE INFRARED INDUCTION INSTRUMENT POWERED BY A DRY BATTERY - An active infrared induction instrument powered by a dry battery capable of reducing power consumption through the adjustment of the emitter pulse width. The infrared emitted LED emits infrared signals, which, after being reflected by an object, are received by the infrared photodiode. The infrared signals received the infrared signals received by the infrared photodiode then enter an integrated circuit chip through a comparator. The pulse widths of the infrared emission pulse signals are dynamically adjusted after the width of the pulse series is received by the discrimination chip, thus reducing the emission power consumption to save energy. | 01-10-2013 |
20130026366 | VERTICALLY STACKED THERMOPILE - A vertically stacked thermopile and an IR sensor using said stacked thermopiles are provided. The vertically stacked thermopile may include multiple thermocouples stacked vertically on one another. The thermocouples may be connected in series, parallel, or a combination of series and parallel. One or more vertically stacked thermopiles may be included in an IR sensor and the thermopiles may be connected in series, parallel, or a combination of series and parallel. | 01-31-2013 |
20130032719 | ELECTRICAL CALIBRATED RADIOMETER - An electrical calibrated radiometer includes a base, a suspension unit extending from the base, and a first heat measuring unit and a second heat measuring unit formed in the base. By applying a known voltage to the first heat measuring unit, the first heat measuring unit could serve as a thermal background for the second heat measuring unit, and an absolute temperature of a heat source could be determined with high precision from output voltages of the second heat measuring unit. | 02-07-2013 |
20130048858 | Hybrid photodiode/APD focal plane array for solid state low light level imagers - A hybrid solid state imaging focal plane array (FPA) for night vision systems achieves a high dynamic range from deeply overcast starlight to full daylight by interleaving non-avalanche photodiode (NAP) pixels with APD pixels in a single imaging plane controlled by a common readout circuit. The APD pixels provide high performance at low light levels, while the NAP pixels provide unsaturated images in full daylight. The APD pixels can be Discrete. In low light the readout circuit can disable the NAP pixels and interpolate the NAP pixels using the APD signals. In daylight the readout circuit can do the opposite. The FPA can be digitally fused with sensors in a separate plane such as InGaAs APD's that detect wavelengths outside of the visible band. The NAP pixels can outnumber the APD pixels, for example by three-to-one. The APD's can be silicon for visible light, or InGaAs for SWIR light. | 02-28-2013 |
20130062522 | THREE DIMENSIONAL SENSORS, SYSTEMS, AND ASSOCIATED METHODS - 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface. | 03-14-2013 |
20130087707 | INFRARED THERMAL DETECTOR AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, an infrared thermal detector includes a substrate, a detector spaced apart from the substrate, and a thermal legal configured to transmit a signal from the detector to the substrate. The detector is configured to absorb incident infrared light via localized surface Plasmon resonance, and the detector is configured to change a resistance value according to a temperature change caused by the absorbed infrared light. | 04-11-2013 |
20130146770 | TERAHERTZ CONTINUOUS WAVE SYSTEM AND METHOD OF OBTAINING THREE-DIMENSIONAL IMAGE THEREOF - A terahertz continuous wave system in accordance with the inventive concept may include a terahertz wave generator generating a terahertz continuous wave; a non-destructive detector measuring a change of the terahertz continuous wave by emitting the generated terahertz continuous wave to a sample and controlling a focal point of the emitted terahertz continuous wave while two-dimensionally moving the sample at predetermined intervals; and a three-dimensional image processor obtaining a three-dimensional image using two-dimensional images corresponding to the measured terahertz continuous wave. | 06-13-2013 |
20130193324 | INTEGRATED TERAHERTZ IMAGING SYSTEMS - A low-power 4×4-pixel THz camera with responsivity greater than 2.5 MV/W and sub-10 pW/√Hz NEP at 0.25 THz is integrated in 130 nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager. | 08-01-2013 |
20130206990 | Background Limited Focal Plane Array Assembly - The thermoelectric detector comprises an infrared absorber pixel structure supported by two electrically connected beams made of a thermoelectric material. One end of the thermoelectric beam connects to the infrared absorber pixel structure; the other end connects to the substrate. The detector comprises a microlens for collecting and focusing infrared radiation on the detector. Infrared radiation is incident on the infrared absorber pixel structure results in a temperature gradient along the length of the thermoelectric legs, and generating an electrical voltage proportional to the gradient. A low noise SIGe BiCMOS readout integrated circuit is coupled to the detector to provide a background limited detector having improved detectivity. | 08-15-2013 |
20130214159 | INFRARED LIGHT TRANSMISSIVITY FOR A MEMBRANE SENSOR - In conventional membrane infrared (IR) sensors, little to no attention has been paid toward transmissivity of IR near metal traces. Here, because the substrate of an integrated circuit carrying the sensor is used as a visible light filter, reflection of IR radiation back into the substrate can affect the operation and reliability of the IR sensor. As a result, an arrangement is provided that reduces the area occupied by metal lines by reducing the pitch and compacting the routing so as to reduce the effects from the reflection of IR radiation by metal traces. | 08-22-2013 |
20130214160 | VISIBLE AND NEAR-INFRARED RADIATION DETECTOR - The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers. | 08-22-2013 |
20130214161 | VISIBLE AND NEAR-INFRARED RADIATION DETECTOR - The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. | 08-22-2013 |
20130221221 | SINGLE PHOTON DETECTOR IN THE NEAR INFRARED USING AN INGAAS/INP AVALANCHE PHOTODIODE OPERATED WITH A BIPOLAR RECTANGULAR GATING SIGNAL - The present invention relates to a single photon detector (SPD) at telecom wavelength of 1.55 μm based on InGaAs/InP avalanche photodiode (APD). In order to operate the SPD at a low after-pulse noise, a DC bias voltage lower than the breakdown voltage is applied to an InGaAs/InP APD. A bipolar rectangular gating signal is superimposed with the DC bias voltage and applied to the APD so as to exceed the breakdown voltage during the gate-on time of each period of the gate signal. The use of the bipolar rectangular gating signal enabling us to operate the APD well below the breakdown voltage during the gate-off time, thereby make the release of the trapped charge carriers faster and then reduces the after-pulse noise. As a result, it permits to increase the repetition rate of the SPD. | 08-29-2013 |
20130234027 | METHOD FOR DRIVING SEMICONDUCTOR DEVICE - A semiconductor device capable of acquiring high-precision range information in a short time is provided. Alternatively, a semiconductor device capable of acquiring the range information and image information concurrently in a short time is provided. The accuracy of range information is increased by performing infrared light irradiation more than once to acquire a detection signal and making infrared light irradiation periods identical and extremely short. By detecting light reflected from substantially the same points of an object by adjacent photodiodes, the accuracy of range information can be maintained even when the object is a moving object. By overlapping a photodiode absorbing visible light and transmitting infrared light with a photodiode absorbing infrared light, range information and image information can be acquired concurrently. | 09-12-2013 |
20130248713 | METHOD OF LOCAL ELECTRO-MAGNETIC FIELD ENHANCEMENT OF TERAHERTZ (THZ) RADIATION IN SUB-WAVELENGTH REGIONS AND IMPROVED COUPLING OF RADIATION TO MATERIALS THROUGH THE USE OF THE DISCONTINUITY EDGE EFFECT - A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material. | 09-26-2013 |
20130248714 | UNCOOLED INFRARED IMAGING DEVICE - An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element. | 09-26-2013 |
20130292570 | SYSTEM AND METHOD FOR PERFORMING HEATER-LESS LEAD SELENIDE-BASED CAPNOMETRY AND/OR CAPNOGRAPHY - A sensor device is configured to detect a level of carbon dioxide in a body of gas. The sensor device employs one or more lead selenide (PbSe) detectors as infrared sensing elements, and operates without the temperature regulation required by conventional PbSe-based sensors. Instead, measurements of detector device are compensated for a temperature measured by a relatively inexpensive thermal sensor. This may reduce the cost, enhance stability, enhance ruggedness, enhance manufacture and/or provide other advantages over conventional detectors. | 11-07-2013 |
20130299701 | PHOTO DETECTOR AND OPTICAL DEVICE - An optical device may include first and second lasers generating first and second laser beams; and a photo detector detecting the first and second laser beams. The optical detector comprises a substrate, a first impurity layer on the substrate, an absorption layer on the first impurity layer and a second impurity layer on the absorption layer. The absorption layer generates a terahertz by a beating of the first and second laser beams and has a thickness of less than | 11-14-2013 |
20130306869 | IMPROVED-EFFICIENCY FIBRE-COUPLED TERAHERTZ SYSTEM - A terahertz system can be configured for producing and coherently detecting terahertz radiation. The system can comprise a laser light source and two THz antennas, a first of which is used as a transmission antenna and a second of which is used as a receiver antenna, which are each optically coupled to the laser light source by an optical fibre and can be activated by light from this laser light source, wherein the THz antennas each have a semiconductor chip to which antenna conductors have been contact-connected and which comprises at least one photosensitive active layer with a band edge wavelength which is longer than a wavelength of the laser light source and at least one layer, adjoining the active layer, with a band edge wavelength which is shorter than the wavelength of the laser light source, wherein the band edge wavelength of the active layer of at least one of the THz antennas is at least 200 nm longer than the wavelength of the laser light source. | 11-21-2013 |
20130313433 | Infrared-Based Vehicle Component Imaging and Analysis - An improved system for evaluating one or more components of a vehicle is provided. The system includes a set of imaging devices configured to acquire image data based on infrared emissions of at least one vehicle component of the vehicle as it moves through a field of view of at least one of the set of imaging devices. An imaging device in the set of imaging devices can include a linear array of photoconductor infrared detectors and a thermoelectric cooler for maintaining an operating temperature of the linear array of detectors at a target operating temperature. The infrared emissions can be within at least one of: the mid-wavelength infrared (MWIR) radiation spectrum or the long wavelength infrared (LWIR) radiation spectrum. | 11-28-2013 |
20130320214 | LIQUID COMPONENT SENSOR - A liquid component sensor includes: an infrared light source; a detection cell including: two substrates made of material for penetrating an infrared light therethrough and stacked each other; a passage for flowing liquid arranged between facing surfaces of the substrates; and a detection portion for detecting the liquid provided by at least a part of the passage; a spectrometer for dispersing light penetrating the detection cell; and a light detector for detecting dispersed light. Each substrate includes outside and facing surfaces, so that two substrates provide four surfaces totally. The detection cell further includes a filter for passing the infrared light having a predetermined wavelength selectively. The filter is disposed on at least one of four surfaces at a predetermined position, which corresponds to at least the detection portion. | 12-05-2013 |
20140001363 | SCHOTTKY BARRIER DIODE AND APPARATUS USING THE SAME | 01-02-2014 |
20140014839 | SENSOR DESIGN BASED ON LIGHT SENSING - A sensor based on light sensing is provided, including a visible light sensor, an IR sensor, an amplifier connected to visible light sensor and IR sensor, an auto-gain control (AGC) connected to amplifier, an A/D converter (ADC) connected to AGC, a digital filter connected to ADC, a multiplexer connected to both digital filter and ADC, a timing controller connected to amplifier, AGC, DC, and digital filter, a temperature sensor, a voltage reference connected to amplifier, an oscillator connected to ADC, an IR_LED driver for driving IR LEDs, a control register connected to timing controller, a data register connected to multiplexer, an I2C interface connected to external serial clock line (SCL) and serial data lines (SDA), and an interrupt interface connected to external interrupt bus (INTB). SCL, SDA and INTB are connected externally to a host able to read and display the result data from the sensor. | 01-16-2014 |
20140027640 | BDI IR Readout Circuit Using Pinned Photodiode as Integration Node - An image sensor system has an input from a photosensor, receiving photogenerated electricity, and coupling said photogenerated electricity to a first photodiode to integrate the photogenerated electricity. The photodiode can be a pinned diode, configured to act integrate charge. | 01-30-2014 |
20140054461 | LIGHT DETECTOR WITH GE FILM - A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor. | 02-27-2014 |
20140054462 | Device and Method for Increasing Infrared Absorption in MEMS Bolometers - A semiconductor sensor includes a substrate and an absorber. The substrate includes at least one reflective component. The absorber is spaced apart from the at least one reflective component by a distance. The absorber defines a plurality of openings each having a maximum width that is less than or equal to the distance. | 02-27-2014 |
20140061469 | DETECTION OF ELECTROMAGNETIC RADIATION USING NONLINEAR MATERIALS - An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation. | 03-06-2014 |
20140061470 | SHORT OPTICAL PULSE GENERATOR, TERAHERTZ WAVE GENERATION DEVICE, CAMERA, IMAGING APPARATUS, AND MEASUREMENT APPARATUS - A short optical pulse generator which includes an optical pulse generation portion that has a quantum well structure and generates an optical pulse, a frequency chirp portion that has a quantum well structure and chirps a frequency of the optical pulse, and a group velocity dispersion portion that includes a plurality of optical waveguides disposed in a mode coupling distance and which causes a group velocity difference corresponding to a wavelength in the optical pulse of which the frequency is chirped. | 03-06-2014 |
20140091218 | INFRARED DETECTOR SYSTEM AND METHOD - An infrared detector system is described which includes a detector diode array | 04-03-2014 |
20140103210 | MULTI-STACK FILM BOLOMETER - A semiconductor device includes a substrate, suspension structures extending from the upper surface of the substrate, and an absorber stack attached to the substrate by the suspension structures. The suspension structures suspend the absorber stack over the substrate such that a gap is defined between the absorber stack and the substrate. The absorber stack includes a plurality of metallization layers interleaved with a plurality of insulating layers. At least one of the metallization layers has a thickness of approximately 10 nm or less. | 04-17-2014 |
20140103211 | INTERLACED TERAHERTZ TRANSCEIVER USING PLASMONIC RESONANCE - Disclosed are devices and methods for enhancing the performance of photoconductive switches or photomixers used to generate or receive terahertz radiation. An interlaced electrode is used to minimize carrier transit times across an absorbing semiconductor photoconductor. This electrode is designed to support a plasmonic resonance such that coupling of the optical pump signal to the absorbing photoconductor is enhanced. | 04-17-2014 |
20140110581 | PHOTOSENSOR DEVICE AND METHOD FOR DETERMINING INCIDENT LIGHT - A photosensor device includes a plurality of first well structures, a light shielding layer, and a plurality of second well structures. The first well structures are disposed in a substrate. The light shielding layer disposed is on the substrate; it covers a portion of the first well structures and exposes the rest portion of the first well structures. The covered first well structures are adjacent to the exposed first well structures exposed. The exposed first well structures generate a first photocurrent according to incident light. The second well structures generate a second photocurrent according to incident light. A total surface area of the second well structures is substantially equal to a total surface area of the exposed first well structures. A method for determining the incident light is also provided. | 04-24-2014 |
20140117238 | METHOD AND APPARATUS FOR DETECTING AN ANALYTE - Disclosed herein are methods and mid-IR detection apparatus to measure analytes in gas or liquid phase. Solid state cooling of a crystalline lattice is effectively achieved with the controlled flow of charge carriers that absorb thermal energy from the semiconductor material which senses mid-IR photons. Reduction in temperature improves signal-to-noise ratios thus improving molecular sensitivity. In one embodiment the apparatus is used to detect a biomarker. | 05-01-2014 |
20140131577 | INFRARED SENSOR STRUCTURE AND METHOD - A radiation sensor ( | 05-15-2014 |
20140151559 | ON-CHIP CALIBRATION SYSTEM AND METHOD FOR INFRARED SENSOR - A radiation sensor includes an integrated circuit radiation sensor chip ( | 06-05-2014 |
20140166882 | UNCOOLED MICROBOLOMETER DETECTOR AND ARRAY FOR TERAHERTZ DETECTION - An uncooled microbolometer detector that includes a substrate, a platform held above the substrate by a support structure, at least one thermistor provided on the platform, and an optical absorber. The optical absorber includes at least one electrically conductive layer extending on the platform over and in thermal contact with the at least one thermistor and patterned to form a resonant structure defining an absorption spectrum of the uncooled microbolometer detector. The optical absorber is exposed to electromagnetic radiation and absorbs the electromagnetic radiation according to the absorption spectrum. A microbolometer array including a plurality of uncooled microbolometer detectors arranged in a two-dimensional array is also provided. Advantageously, these embodiments allow extending the absorption spectrum of conventional infrared uncooled microbolometer detectors to the terahertz region of the electromagnetic spectrum. | 06-19-2014 |
20140175283 | TERAHERTZ DETECTION CELL - According to a first aspect of the invention, the invention relates to a terahertz detection cell for detecting radiations having frequencies within a given spectral detection band, said cell comprising: a polar semi-conductor crystal structured such that it forms at least one slab of crystal, said crystal ( | 06-26-2014 |
20140175284 | INFRARED DETECTOR INCLUDING BROADBAND LIGHT ABSORBER - An infrared detector capable of detecting an infrared spectrum having a wide bandwidth using a broadband light absorber. The infrared detector including a substrate, a light absorber disposed apart from the substrate at a distance, and a pair of thermal legs configured to support the light absorber such that the light absorber is spaced apart from the substrate by the distance. The light absorber includes at least one thermistor layer having a resistance value that varies according to temperature and at least two resonator layers disposed on at least one of upper and lower surfaces of the at least one thermistor layer. | 06-26-2014 |
20140175285 | BOLOMETER HAVING ABSORBER WITH PILLAR STRUCTURE FOR THERMAL SHORTING - A semiconductor device includes a substrate having an electrode structure. An absorber structure is suspended over the electrode structure and spaced a first distance apart from the first electrode structure. The absorber structure includes i) suspension structures extending upwardly from the substrate and being electrically connected to readout conductors, and ii) a pillar structure extending downwardly from the absorber structure toward the first electrode structure. The pillar structure has a contact portion located a second distance apart from the first electrode structure, the second distance being less than the first distance. The absorber structure is configured to flex toward the substrate under a test condition. The second distance is selected such that the contact portion of the pillar structure is positioned in contact with the first electrode structure when the absorber structure is flexed in response to the test condition. | 06-26-2014 |
20140175286 | High Operating Temperature Quantum Dot Infrared Detector - Methods and systems for electromagnetic detection are disclosed, including providing a high operating temperature quantum dot infrared photodetector comprising: a substrate; a bottom contacting layer atop the substrate; one or more active regions atop the bottom contacting layer; and a top contacting layer atop the one or more active regions; and exposing the high operating temperature quantum dot infrared photodetector to electromagnetic waves. Other embodiments are described and claimed. | 06-26-2014 |
20140175287 | Optical Antenna Enhanced Infrared Detector - Methods and systems for electromagnetic detection are disclosed, including providing an optical antenna enhanced detector comprising: a micro photodetector, wherein the micro photodetector comprises: a substrate; a bottom contacting layer atop the substrate; one or more active regions atop the bottom contacting layer; and a top contacting layer atop the one or more active regions; and an optical antenna integrated with the micro photodetector, wherein the optical antenna is configured to concentrate incident electromagnetic waves onto the micro photodetector; and exposing the optical antenna enhanced detector to electromagnetic waves. Other embodiments are described and claimed. | 06-26-2014 |
20140183362 | SHORT-WAVE INFRARED SUPER-CONTINUUM LASERS FOR DETECTING COUNTERFEIT OR ILLICIT DRUGS AND PHARMACEUTICAL PROCESS CONTROL - A system and method for using near-infrared or short-wave infrared (SWIR) light sources for identification of counterfeit drugs may perform spectroscopy using a super-continuum laser to provide detection in a non-contact and non-destructive manner at stand-off or remote distances with minimal sample preparation. Also, near-infrared or SWIR light may penetrate through plastic containers and packaging, permitting on-line inspection and rapid scanning. The near-infrared or SWIR spectroscopy may also be used to detect illicit drugs and their chemical composition. Moreover, the spectroscopic techniques may also be applied to quality assessment and control in pharmaceutical manufacturing, thus permitting the implementation of smart manufacturing with feedback control. Fiber super-continuum lasers may emit light in the near-infrared or SWIR between approximately 1.4-1.8 microns, 2-2.5 microns, 1.4-2.4 microns, 1-1.8 microns. In particular embodiments, the detection system may be a dispersive spectrometer, a Fourier transform infrared spectrometer, or a hyper-spectral imaging detector or camera. | 07-03-2014 |
20140209800 | NON-DISPERSIVE INFRARED GAS DETECTOR, AND METHOD OF STABILIZING INFRARED EMISSION OF AN INCANDESCENT LAMP - An NDIR gas detector includes a photodetector for detecting a portion of stray visible light emitted from an incandescent lamp so as to generate an induced electrical signal, which is compared with a preset reference signal associated with a predetermined constant level of the stray visible light corresponding to a constant temperature of the lamp so as to obtain a level difference between the induced electrical signal and the reference signal. Electrical power supplied to the lamp is repeatedly regulated based on the level difference until the induced electrical signal and the reference signal have the same level, thereby stabilizing IR emission of the lamp in response to the lamp being kept at the constant temperature. | 07-31-2014 |
20140209801 | METHOD FOR USING A PHOTODETECTOR HAVING A BANDWIDTH TUNED HONEYCOMB CELL PHOTODIODE STRUCTURE - A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant. A plurality of adjoining cavities is formed in the semiconductor substrate having shared cell walls. A semiconductor well is formed in each cavity, moderately doped with a second dopant opposite in polarity to the first dopant. A layer of oxide is grown overlying the semiconductor wells and an annealing process is performed. Then, metal pillars are formed that extend into each semiconductor well having a central axis aligned with an optical path. A first electrode is connected to the metal pillar of each cell, and a second electrode connected to the semiconductor substrate. The capacitance between the first and second electrodes decreases in response to forming an increased number of semiconductor wells with a reduced diameter, and forming metal pillars with a reduced diameter. | 07-31-2014 |
20140217288 | PHOTOCONDUCTIVE ELEMENT, LENS, TERAHERTZ EMISSION MICROSCOPE AND METHOD OF PRODUCING DEVICE - [Object] To provide a terahertz emission microscope being capable of improving a detection accuracy of a terahertz electromagnetic wave, a photoconductive element and a lens used therefor, and a method of producing a device. | 08-07-2014 |
20140231647 | COMPACT FIBER-BASED SCANNING LASER DETECTION AND RANGING SYSTEM - A system for short-range laser detection and ranging of targets can provides rapid three-dimensional, e.g., angle, angle, range, scans over a wide field-of-view. Except for the final transmit/receive lens, the disclosed LADAR system can be implemented in an all-fiber configuration. Such system is compact, low cost, robust to misalignment, and lends itself to eye-safe operation by making use of available pulsed 1550 nm fiber lasers and amplifier sources. The disclosed LADAR system incorporates many novel features that provide significant advantages compared to current LADAR systems. The disclosed system uses a monostatic fiber-based transmitter/receiver, a fiber beam scanner based on a laterally vibrating fiber, and a position sensor to monitor the transmitted beam position. | 08-21-2014 |
20140239179 | Sealed Infrared Imagers - The architecture, design and fabrication of array of suspended micro-elements with individual seals are described. Read out integrated circuit is integrated monolithically with the suspended elements for low parasitics and high signal to noise ratio detection of changes of their electrical resistance. Array of individually sealed, suspended micro-elements is combined with signal processing chip that contains nonvolatile memory with sensitivity calibration of all elements and interpolation between non-functional elements. When the micro-elements are infrared light absorbers, image analysis and recognition is embedded in the processing chip to form the infrared imaging solution for infrared cameras. | 08-28-2014 |
20140239180 | Bolometric Detector With A Temperature-Adaptive Biasing - An infrared detector including an array of detection bolometers each having a bolometric membrane suspended above a substrate, and associated with each bolometer: a detection branch, including the bolometer and a circuit performing a biasing according to a voltage set point, a compensation branch, including a compensation bolometer thermalized to the substrate, a circuit performing a biasing according to a voltage set point, an integrator for generating a voltage by integrating a difference between the currents flowing through said branches, a circuit generating a quantity depending on substrate temperature, including: a bolometer thermalized to the substrate, and a circuit for biasing the bolometer, and a circuit for generating the voltage set points according to said quantity. When the array is exposed to a uniform reference scene, the average of the differences between currents flowing through said branches is within the integrator dynamic range for a substrate temperature range from −30° C.-90° C. | 08-28-2014 |
20140246588 | OPTICAL POSITION DETECTION DEVICE - The optical position detection device includes a light irradiation unit that irradiates a target object with light, and a light receiving unit that receives reflected light from the target object. The light receiving unit includes a segmented photodiode in which a light receiving surface is two-dimensionally segmented into a plurality of light receiving regions, the segmented photodiode outputting a current corresponding to the intensity of light received by each of the light receiving regions; a light receiving lens that condenses the reflected light from the target object and forms an image of the target object on the light receiving surface of the segmented photodiode; and an arithmetic unit that detects a position of the target object in a two-dimensional direction orthogonal to the optical axis of the light receiving lens, based on the output currents corresponding to the respective light receiving regions of the segmented photodiode. | 09-04-2014 |
20140252233 | METHODS, DEVICES AND KITS FOR PERI-CRITICAL REFLECTANCE SPECTROSCOPY - Spectroscopy apparatuses oriented to the critical angle of the sample are described that detecting the spectral characteristics of a sample wherein the apparatus consists of an electromagnetic radiation source adapted to excite a sample with electromagnetic radiation introduced to the sample at an angle of incidence at or near a critical angle of the sample; a transmitting crystal in communication with the electromagnetic radiation source and the sample, the transmitting crystal having a high refractive index adapted to reflect the electromagnetic radiation internally; a reflector adapted to introduce the electromagnetic radiation to the sample at or near an angle of incidence near the critical angle between the transmitting crystal and sample; and a detector for detecting the electromagnetic radiation from the sample. Also, provided herein are methods, systems, and kits incorporating the peri-critical reflectance spectroscopy apparatus. | 09-11-2014 |
20140264030 | METHODS AND APPARATUS FOR MID-INFRARED SENSING - A chip-scale, air-clad semiconductor pedestal waveguide can be used as a mid-infrared (mid-IR) sensor capable of in situ monitoring of organic solvents and other analytes. The sensor uses evanescent coupling from a silicon or germanium waveguide, which is highly transparent in the mid-IR portion of the electromagnetic spectrum (e.g., between λ=1.3 μm and λ=6.5 μm for silicon and λ=1.3 μm and λ=12.0 μm for germanium), to probe the absorption spectrum of the fluid surrounding the waveguide. Launching a mid-IR beam into the waveguide exposed to a particular analyte causes attenuation of the evanescent wave's spectral components due to absorption by carbon, oxygen, hydrogen, and/or nitrogen bonds in the surrounding fluid. Detecting these changes at the waveguide's output provides an indication of the type and concentration of one or more compounds in the surrounding fluid. If desired, the sensor may be integrated onto a silicon substrate with a mid-IR light source and a mid-IR detector to form a chip-based spectrometer. | 09-18-2014 |
20140284483 | HIGH RESPONSIVITY DEVICE FOR THERMAL SENSING IN A TERAHERTZ RADIATION DETECTOR - There is provided a high responsivity device for thermal sensing in a Terahertz (THz) radiation detector. A load impedance connected to an antenna heats up due to the incident THz radiation received by the antenna. The heat generated by the load impedance is sensed by a thermal sensor such as a transistor. To increase the responsivity of the sense device without increasing the thermal mass, the device is located underneath a straight portion of an antenna arm. The transistor runs substantially the entire length of the antenna arm alleviating the problem caused by placing large devices on the side of the antenna and the resulting large additional thermal mass that must be heated. This boosts the responsivity of the pixel while retaining an acceptable level of noise and demanding a dramatically smaller increase in the thermal time constant. | 09-25-2014 |
20140291521 | INFRARED SENSOR AND USE OF SAME - An infrared (IR) sensor package includes a heat sink defining a first interior space and a radiation trap adjacent the first interior space. An IR sensor having a radiation-sensitive region which detects IR radiation is arranged within the first interior space of the heat sink. A first optical element and a second optical element are arranged at respective ends of the radiation trap. The radiation trap is configured to allow for the passage of a first portion of IR radiation incident the second optical element, through the first optical element, and into communication with the IR sensor element, and to absorb a second portion of IR radiation incident the second optical element. | 10-02-2014 |
20140299772 | MID-INFRARED PHOTODETECTORS - Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 μm to 12 μm and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors. | 10-09-2014 |
20140312230 | INFRARED IMAGER - Devices, methods, and systems relating to infrared imager devices, methods for providing infrared imagers, methods of operating infrared imagers, and infrared imager systems are disclosed. An infrared imager system includes a number of lenses, a beam splitter, an imager array, and a thermo-optical array, wherein the beam splitter directs light to the imaging array and to the thermo-optical array. | 10-23-2014 |
20140319350 | METHOD FOR MAKING AN INFRARED DETECTION DEVICE - An infrared detection device including an infrared heat detector and a connection pad each spaced apart from an etching stop layer by a non-zero distance substantially equal relatively to each other, wherein first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in a first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector. | 10-30-2014 |
20140332686 | METHOD TO IDENTIFY WAVELENGTH OF INCOMING LIGHT BY AVALANCHE PHOTODIODE, METHOD TO CONTROL OPTICAL TRANSCEIVER, AND OPTICAL TRANSCEIVER PERFORMING THE SAME - A method to identify the wavelength of incoming light is disclosed. The method includes steps to measure a first photocurrent by setting the avalanche photodiode (APD) in a photodiode (PD) mode and a second photocurrent by setting the APD in the APD mode, and to compare a ratio of the two photocurrents with prepared references. | 11-13-2014 |
20140346356 | OPTICAL DETECTOR UNIT - This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. | 11-27-2014 |
20140346357 | PHOTOCONDUCTIVE DEVICE WITH PLASMONIC ELECTRODES - A photoconductive device that includes a semiconductor substrate, an antenna assembly, and a photoconductive assembly with one or more plasmonic contact electrodes. The photoconductive assembly can be provided with plasmonic contact electrodes that are arranged on the semiconductor substrate in a manner that improves the quantum efficiency of the photoconductive device by plasmonically enhancing the pump absorption into the photo-absorbing regions of semiconductor substrate. In one exemplary embodiment, the photoconductive device is arranged as a photoconductive source and is pumped at telecom pump wavelengths (e.g., 1.0-1.6 μm) and produces milliwatt-range power levels in the terahertz (THz) frequency range. | 11-27-2014 |
20140353502 | PHOTODETECTOR AND UPCONVERSION DEVICE WITH GAIN (EC) - Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications. | 12-04-2014 |
20140367572 | METHOD AND APPARATUS FOR PROVIDING A CHARGE BLOCKING LAYER ON AN INFRARED UP-CONVERSION DEVICE - Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with up-conversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation. | 12-18-2014 |
20140367573 | SEMICONDUCTOR DEVICE AND INFRARED IMAGE PICKUP DEVICE PROVIDED WITH SAME - Provided is an infrared image pickup device, including: a plurality of bolometer elements that receive light from a subject; and a plurality of readout circuits respectively connected to the plurality of bolometer elements, the plurality of bolometer elements and the plurality of readout circuits being connected to a first input voltage wiring and a second input voltage wiring. Each of the plurality of readout circuits includes: a bias circuit that applies a bias voltage to corresponding one of the plurality of bolometer elements; a bias-canceling circuit that removes an offset current of the corresponding one of the plurality of bolometer elements; an integration circuit connected to a connection point between the bias circuit and the bias-canceling circuit, that integrates a differential current between the bias circuit and the bias-canceling circuit; and a saturation-prevention circuit that prevents saturation of an output voltage of the integration circuit. | 12-18-2014 |
20140374597 | INFRARED DETECTOR WITH METAL-BLACK COATING HAVING DIELECTRIC OVERLAYER AND RELATED METHODS - An infrared (IR) detector may include a substrate, circuitry carried by the substrate, and a metal-black layer over the thermometric element. The circuitry may include a thermometric element with a measureable thermometric property. The IR detector may include a dielectric layer covering the metal-black layer, and the circuitry provides a value for IR radiation absorbed by the metal-black layer. | 12-25-2014 |
20150014535 | TERAHERTZ DETECTION ASSEMBLY AND METHODS FOR USE IN DETECTING TERAHERTZ RADIATION - A terahertz detection assembly generally has a light generating apparatus configured to generate at least one illuminating light pattern and a substrate member positioned proximate to the light generating apparatus. The substrate member includes a semiconductive portion configured to receive at least a portion of the illuminating light pattern such that a conductive path is defined within the semiconductive portion. At least one waveguide is coupled to the semiconductive portion such that the waveguide is adjacent to the conductive path. The waveguide is configured to receive at least a portion of the illuminating light pattern such that the pattern is moving along the waveguide. The waveguide is further configured to receive a plurality of terahertz electromagnetic waves that are transmitted within the waveguide in the same direction as the motion of the illuminating light pattern to facilitate the detection and characterization of the terahertz electromagnetic waves. | 01-15-2015 |
20150014536 | ELECTRONIC DEVICE WITH DISTANCE MEASURE FUNCTION AND RELATED METHOD - A method for measuring a distance between an electronic device and an object is provided. The method includes: starting to emit infrared light to an object when the electronic device is parallel to a length of the object which is perpendicularly placed and is configured to reflect the received infrared light to a photodiode; stop the timer to acquire a period of time when the photodiode receives the reflected-infrared light from the object; calculating a transmission distance of the infrared light during the period of time; and calculating the distance between the electronic device and the object according to a first distance from the infrared light source to the photodiode and the transmission distance of the infrared light source during the period of time. | 01-15-2015 |
20150021478 | NON-DESTRUCTIVE SUGAR CONTENT MEASURING APPARATUS - A non-destructive sugar content measuring apparatus is provided and includes a measuring sensor portion for including a spectral sensor which receives a near infrared ray from the light which is reflected by the flesh FB of the fruit F of which the sugar content is measured, an LED light source which has LEDs circularly arranged, an optical sensor which receives light reflected by a flesh of a fruit F, and a temperature sensor; a casing including a measuring sensor portion and has a panel portion which has a digital display for displaying a brix value as a digital value and operational switches, the panel portion and the operational switches being mounted on a front face thereof; a main circuit board PB for including a Central Processing Unit (CPU) which is embedded in the casing and processes electric signals from the light sensor and performs a calculation and determination | 01-22-2015 |
20150021479 | BOLOMETER AND PREPARATION METHOD THEREOF - A bolometer and a preparation method thereof. The bolometer includes: an infrared detection element ( | 01-22-2015 |
20150041654 | METHOD AND SYSTEM FOR INSPECTION OF COMPOSITE ASSEMBLIES USING TERAHERTZ RADIATION - The present invention relates to a method for non-destructive, contact or non-contact inspection of composite assemblies using radiation having a frequency in the terahertz range (10 GHz-10 THz) of the spectrum, whereby said method is implemented as an embodiment of the system for non-destructive, contact or non-contact inspection of composite assemblies using terahertz radiation, that is also claimed under the present invention. Said method enables the forming of a two or three-dimensional image of the material structure of an assembly of composite materials, from which image detection and analysis of material conditions of the composite materials forming said composite assemblies is possible, irrespective of the way that the composite materials forming said composite assemblies were joined together, and without the need for a priori knowledge about the structural characteristics, shape or configuration of said composite materials (for instance layered, foam, placed on metal substrate). | 02-12-2015 |
20150041655 | OPTOPAIRS WITH TEMPERATURE COMPENSABLE ELECTROLUMINESCENCE FOR USE IN OPTICAL GAS ABSORPTION ANALYZERS - Optopair for use in sensors and analyzers of gases such as methane, and a fabrication method therefor is disclosed. It comprises: a) an LED, either cascaded or not, having at least one radiation emitting area, whose spectral maximum is de-tuned from the maximum absorption spectrum line of the gas absorption spectral band; and b) a Photodetector, whose responsivity spectral maximum can be either de-tuned from, or alternatively completely correspond to the maximum absorption spectrum line of the absorption spectral band of the gas. Modeling the LED emission and Photodetector responsivity spectra and minimizing the temperature sensitivity of the optopair based on the technical requirements of the optopair signal registration circuitry, once the spectral characteristics of the LED and Photodetector materials and the temperature dependencies of said spectral characteristics are determined, provides the LED de-tuned emission and Photodetector responsivity target peaks respectively. | 02-12-2015 |
20150048249 | INFRARED SENSOR, THERMAL IMAGING CAMERA AND METHOD FOR PRODUCING A MICROSTRUCTURE FROM THERMOELECTRIC SENSOR RODS - An infrared sensor with a microstructure has a multiplicity of sensor rods protruding from a sensor base and arranged axially parallel to one another. Each of the sensor rods is designed as a thermocouple, in that a first rod end, arranged on the sensor base, is electrically connected to an opposite free second rod end by both a first and a second electrically conductive rod element. The two rod elements have a different Seebeck coefficient, and the first rod element is formed as a hollow profile and the second rod element is arranged in the first rod element such that each thermocouple is formed as a single rod with a small standing area on the sensor base. | 02-19-2015 |
20150053860 | MANUFACTURING NANOWIRE PHOTO-DETECTOR GROWN ON A BACK-SIDE ILLUMINATED IMAGE SENSOR - An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. | 02-26-2015 |
20150069244 | UNIT PIXELS, DEPTH SENSORS AND THREE-DIMENSIONAL IMAGE SENSORS INCLUDING THE SAME - A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction. | 03-12-2015 |
20150136984 | INFRARED IMAGING ELEMENT, IMAGING DEVICE, AND IMAGING SYSTEM - An infrared imaging element of an embodiment includes: a first pixel portion including a first cell portion including a first infrared ray detecting portion detecting a first infrared ray and a second infrared ray with a wavelength different from a wavelength of the first infrared ray, and first supporting legs that support the first cell portion, the first supporting legs including a first and second wiring lines that convey an electrical signals obtained by the first infrared ray detecting portion; and a second pixel portion including a second cell portion including a second infrared ray detecting portion detecting the second infrared ray, and second supporting legs that support the second cell portion, the second supporting legs including a third and fourth wiring lines that convey an electrical signal obtained by the second infrared ray detecting portion. | 05-21-2015 |
20150136985 | INFRARED SENSOR WITH LIMITATION APERTURE - A semiconductor device comprising an infrared sensor assembly for sensing infrared radiation is described. The infrared sensor assembly comprises a single sensing element for sensing infrared radiation and an aperture means comprising a plurality of apertures. The sensing element and the aperture means thereby are positioned with respect to each other so that the plurality of apertures are positioned in front of the same, single sensing element so that the plurality of apertures limit the field of view of the same, single sensing element for impinging radiation. | 05-21-2015 |
20150144790 | VIDEO AND 3D TIME-OF-FLIGHT IMAGE SENSORS - Electronic devices may include time-of-flight (ToF) image pixels. Each ToF pixel may include a photodiode, a first capacitor coupled to the photodiode via a first transfer gate, a second capacitor coupled to the photodiode via a second transfer gate, and a third capacitor coupled to the photodiode via a third transfer gate. The first transfer gate may be turned on for a given duration to store a first charge in the first capacitor. The second transfer gate may be turned on for the given duration to store a second charge in the second capacitor. The third transfer gate may be turned on for a duration that is longer than the given duration to store a third charge in the third capacitor. Depth information may be computed based on the first, second, and third stored charges and a corresponding pixel constant. | 05-28-2015 |
20150300884 | 340 GHz MULTIPIXEL TRANSCEIVER - A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart. | 10-22-2015 |
20150308899 | Infrared Sensor Package - The present invention relates to an integrated infrared sensor device, comprising a sensor substrate and a filter substrate. The sensor substrate has a back surface and a front surface opposite the back surface, in which the back surface has a cavity defined therein and the front surface has at least one infrared sensing element formed therein or arranged thereon, covered with a cap for protecting the at least one sensing element, e.g. against mechanical damage and dust, and/or against stray radiation. The filter substrate is arranged on the back surface of the sensor substrate such that the filter substrate at least partially covers the cavity. The filter substrate is adapted in shape and composition to transmit infrared radiation and to attenuate radiation in at least part of the visible light spectrum. | 10-29-2015 |
20150308900 | DEVICE FOR OPERATING PASSIVE INFRARED SENSORS - A system for measuring a sensor having two terminals includes first and second transistors with first and second control signal inputs connected to the sensor terminals. The system further includes a current divider including a reference current input, a current divider control input and first and second current outputs connected to the first and second transistors. First and second load circuits are connected to the first and second transistors at first and second differential output nodes. First and second integrator circuits are connected to the first and second differential output nodes. A comparator is driven by first and second differential output nodes. The comparator output controls a digital filter. A value of the a current divider control signal driving the current divider control input depends at least indirectly from the digital filter output. | 10-29-2015 |
20150316415 | SHORT-WAVE INFRARED SUPER-CONTINUUM LAERS FOR NATURAL GAS LEAK DETECTION, EXPLORATION, AND OTHER ACTIVE REMOTE SENSING APPLICATIONS - A system and method for using near-infrared or short-wave infrared (SWIR) light sources between approximately 1.4-1.8 microns, 2-2.5 microns, 1.4-2.4 microns, 1-1.8 microns for active remote sensing or hyper-spectral imaging for detection of natural gas leaks or exploration sense the presence of hydro-carbon gases such as methane and ethane. Most hydro-carbons (gases, liquids and solids) exhibit spectral features in the SWIR, which may also coincide with atmospheric transmission windows (e.g., approximately 1.4-1.8 microns or 2-2.5 microns). Active remote sensing or hyper-spectral imaging systems may include a fiber-based super-continuum laser and a detection system and may reside on an aircraft, vehicle, handheld, or stationary platform. Super-continuum sources may emit light in the near-infrared or SWIR. An imaging spectrometer or a gas-filter correlation radiometer may be used to identify substances or materials such as oil spills, geology and mineralogy, vegetation, greenhouse gases, construction materials, plastics, explosives, fertilizers, paints, or drugs. | 11-05-2015 |
20150364508 | Impedance adaptation in a THz detector - At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at least one electromagnetic wave of a given frequency may comprise at least one first field effect transistor, and at least one antenna configured to receive the at least one electromagnetic wave and connected to a gate of the at least one first field effect transistor, wherein a length of the gate is in a same order of magnitude as an oscillation length of an oscillation regime of the at least one first field effect transistor at the given frequency, and a width of the gate is such that an impedance presented by the at least one first field effect transistor in the oscillation regime is adapted to an impedance of the at least one antenna. | 12-17-2015 |
20150369660 | SYSTEM, METHOD AND COMPUTER-ACCESSIBLE MEDIUM FOR DEPTH OF FIELD IMAGING FOR THREE-DIMENSIONAL SENSING UTILIZING A SPATIAL LIGHT MODULATOR MICROSCOPE ARRANGEMENT - Exemplary embodiment can utilize the properties of tunable thin-film, material (e.g., graphene) to efficiently modulate the intensity, phase, and/or polarization of transmitted and/or reflected radiation, including mid-infrared (“mid-IR”) radiation. Exemplary embodiments include planar antennas comprising tunable thin-film material sections and metallic sections disposed in contact with the tunable thin-film material sections, each metallic section having a gap with at least one dimension related to a wavelength of the radiation, which in some embodiments may be less than the wavelength. The metallic layer may comprise rods arrange in one or more shapes, or one or more apertures of one or more shapes. Embodiments of the antenna may also comprise a substrate, which may be a semiconductor or conductor in various embodiments. Embodiments also include systems, computer-implemented methods, devices, and computer-readable media for effectuating desired modulation of incident radiation by, e.g., varying the doping level of the tunable thin-film material. | 12-24-2015 |
20150372035 | APPLICATION OF REDUCED DARK CURRENT PHOTODETECTOR WITH A THERMOELECTRIC COOLER - A IDCA system combining thermo-electric cooler (TEC) and an internal nBn photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized. | 12-24-2015 |
20150372046 | A NOVEL IR IMAGE SENSOR USING A SOLUTION-PROCESSED PbS PHOTODETECTOR - An image sensor is constructed on a substrate that is a read-out transistor array with a multilayer array of infrared photodetectors formed thereon. The infrared photodetectors include a multiplicity of layers including an infrared transparent electrode distal to the substrate, a counter electrode directly contacting the substrate, and an infrared sensitizing layer that comprises a multiplicity of nanoparticles. The layers can be inorganic or organic materials. In addition to the electrodes and sensitizing layers, the multilayer stack can include a hole-blocking layer, an electron-blocking layer, and an anti-reflective layer. The infrared sensitizing layer can be PbS or PbSe quantum dots. | 12-24-2015 |
20150372175 | Vertical Pillar Structured Infrared Detector and Fabrication Method for the Same - Photodetector devices and methods for making the photodetector devices are disclosed herein. In an embodiment, the device may include a substrate; and one or more core structures, each having one or more shell layers disposed at least on a portion of a sidewall of the core structure. Each of the one or more structures extends substantially perpendicularly from the substrate. Each of the one or more core structures and the one or more shell layers form a Schottky barrier junction or a metal-insulator-semiconductor (MiS) junction. | 12-24-2015 |
20160079293 | INFRARED SENSOR - An infrared sensor according to an embodiment includes a housing, a detector, a lid, and a light shielding film. The detector is mounted on the bottom surface of the housing and includes a heat-sensitive pixel region and a reference pixel region. The lid seals the housing and includes a support member and a window member. The support member is bonded to the side surfaces of the housing and has an opening positioned above the heat-sensitive pixel region. The window member is bonded to a surface of the support member on a side of the detector so as to cover the opening. The light shielding film is formed on a surface of the window member on a side of the detector and arranged on an optical path of the infrared rays entering the reference pixel region. | 03-17-2016 |
20160087000 | INFRARED IMAGE SENSOR - An infrared image sensor includes a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal. The photodiode includes an optical absorption layer made of a III-V group compound semiconductor. The optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately. | 03-24-2016 |
20160094183 | ELECTROMAGNETIC WAVE GENERATION DEVICE AND DETECTION DEVICE - The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer. | 03-31-2016 |
20160097681 | Microbolometer supported by glass substrate - This disclosure provides systems, methods and apparatus for forming microbolometers on glass substrates. In one aspect, the formation of microbolometers on glass substrates can reduce the size and cost of the resultant array and associated circuitry. In one aspect, a portion of the measurement and control circuitry can be formed by thin-film deposition on the glass substrate, while sensitive measurement and control circuitry can be formed on ancillary CMOS substrates. In one aspect, the microbolometers may be packaged using a variety of techniques, including a wafer-level packaging process or a pixel-level packaging process. | 04-07-2016 |
20160146672 | MICROBOLOMETER DEVICES IN CMOS AND BiCMOS TECHNOLOGIES - A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material. | 05-26-2016 |
20160149090 | Radiation-Emitting Optoelectronic Device - A radiation-emitting optoelectronic device is provided. The radiation-emitting optoelectronic device includes a semiconductor chip that, when the device is in operation, emits primary radiation of a wavelength of between 600 nm and 1000 nm. A conversion element includes a conversion material comprising ions of one or more metals selected from a group comprising La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cr, Pb and Mg. The conversion material converts the primary radiation emitted by the semiconductor chip virtually completely into secondary radiation of a wavelength of between 1000 nm and 6000 nm. | 05-26-2016 |
20160155863 | GERMANIUM METAL-CONTACT-FREE NEAR-IR PHOTODETECTOR | 06-02-2016 |
20160161599 | SEMICONDUCTOR PIXEL UNIT FOR SENSING NEAR-INFRARED LIGHT, OPTIONALLY SIMULTANEOUSLY WITH VISIBLE LIGHT, AND A SEMICONDUCTOR SENSOR COMPRISING SAME - A semiconductor pixel unit for sensing near-infrared light, and for optionally simultaneously sensing visible light. The pixel unit comprises a single substrate with a first semiconductor region and a second semiconductor region electrically separated by an insulating region, for example a buried oxide layer. The pixel unit is adapted for generating a lateral electrical field in the second region for facilitating transport of photoelectrons generated in the second region by near-infrared light passing through the first region and the insulating region. | 06-09-2016 |
20160169738 | IR SENSOR FOR IR SENSING BASED ON POWER CONTROL | 06-16-2016 |
20160169739 | ELECTROMAGNETIC WAVE DETECTING/GENERATING DEVICE | 06-16-2016 |
20160170011 | Method for Operating an Optoelectronic Proximity Sensor | 06-16-2016 |
20160255285 | MARKING SYSTEM AND METHOD | 09-01-2016 |
20180026185 | FAR-INFRARED DETECTION USING WEYL SEMIMETALS | 01-25-2018 |
20190148451 | COMPOSITION, FORMED BODY, LAMINATE, FAR INFRARED RAY TRANSMITTING FILTER, SOLID-STATE IMAGING ELEMENT, INFRARED CAMERA, AND INFRARED SENSOR | 05-16-2019 |